Interposer and method of manufacturing display device using same

Abstract

The invention discloses an interposer and a method of manufacturing a display device using the same. In accordance with an aspect of the present disclosure, an interposer includes a base and a plurality of bumps spaced apart from each other on the base, and each of the plurality of bumps includes a sidewall extending upwardly from the base to define a receiving cell. Therefore, misalignment caused by temperature deviation can be reduced.

Description

[0001] Cross-references to related applications

[0002] This application claims priority to Korean Patent Application No. 10-2024-0154271, filed with the Korean Intellectual Property Office on November 4, 2024, the disclosure of which is incorporated herein by reference. Technical Field

[0003] This disclosure relates to an interposer and a method for manufacturing a display device using the interposer, and more particularly, to an interposer for improving the transfer precision of a light-emitting diode and a method for manufacturing a display device using the interposer. Background Technology

[0004] As display devices used for computer monitors, televisions, or cellular phones, there are organic light-emitting display devices (OLEDs) that are self-emissive and liquid crystal display devices (LCDs) that require a separate light source. The applications of display devices have diversified to personal digital assistants as well as computer monitors and televisions, and display devices with large display areas and reduced size and weight are being researched.

[0005] Furthermore, display devices incorporating light-emitting diodes (LEDs) have recently garnered attention as next-generation display devices. Because LEDs are formed from inorganic rather than organic materials, they offer superior reliability, resulting in a longer lifespan compared to liquid crystal displays or organic light-emitting displays. In addition, LEDs exhibit fast emission speed, excellent luminous efficiency, and strong shock resistance, leading to excellent stability and the ability to display high-brightness images. Display devices incorporating LEDs can be manufactured by transferring LEDs using an interposer. Summary of the Invention

[0006] The purpose of this disclosure is to provide an interposer that minimizes misalignment of light-emitting diodes and a method for manufacturing a display device using the interposer.

[0007] Another objective of this disclosure is to provide an interposer and a method for manufacturing a display device using the interposer, which reduces the identification of mura defects that occur when multiple light-emitting diodes are transferred to the display device based on alignment in the case of multiple light-emitting diodes grown on a growth substrate.

[0008] Another objective of this disclosure is to provide an intermediary layer that reduces the number of transfer processes by using a non-contact transfer method, and a method for manufacturing a display device using the intermediary layer.

[0009] Another objective of this disclosure is to provide an interlayer that mitigates the impact applied to a light-emitting diode in a contactless transfer method, and a method for manufacturing a display device using the interlayer.

[0010] Another objective of this disclosure is to provide an interposer and a method for manufacturing a display device using the interposer, wherein a plurality of bumps to which a plurality of light-emitting diodes are attached are formed to be spaced apart from each other to increase the pressure applied to the plurality of bumps and reduce the non-transfer problem of the light-emitting diodes.

[0011] The purpose of this disclosure is not limited to the purposes mentioned above, and other purposes not mentioned above will be clearly understood by those skilled in the art from the following description.

[0012] According to one aspect of this disclosure, an interposer layer includes a base and a plurality of protrusions spaced apart from each other on the base, and each of the plurality of protrusions includes a sidewall extending upward from the base to define a receiving unit.

[0013] According to another aspect of this disclosure, a method of manufacturing a display device includes: placing a temporary substrate over an interposer, wherein a plurality of light-emitting diodes (LEDs) including a first electrode and a second electrode are disposed on the temporary substrate, the interposer including a plurality of insulating members; transferring the plurality of LEDs on the temporary substrate to the plurality of insulating members respectively; and transferring the plurality of LEDs to the target substrate by attaching the interposer to the target substrate. Transferring to the plurality of insulating members includes surrounding a portion of a side surface of each LED and a surface of the first electrode with the plurality of insulating members, and transferring to the target substrate includes transferring the plurality of insulating members together with the plurality of LEDs to the target substrate.

[0014] Other specific details of the exemplary implementation are included in the detailed implementation and the accompanying drawings.

[0015] According to this disclosure, a material with a low coefficient of thermal expansion is used as an intermediary layer to reduce misalignment caused by temperature deviations.

[0016] According to this disclosure, light-emitting diodes formed on multiple growth substrates are uniformly disposed on an interlayer to suppress the identification of uneven defects in the growth substrates in the display device.

[0017] According to this disclosure, the non-contact transfer method is used to optimize processing by employing a large-sized intermediary layer and reducing the number of transfer processes.

[0018] According to this disclosure, damage to the light-emitting diode can be suppressed when the insulating member of the interlayer accommodates the light-emitting diode transferred in a non-contact manner.

[0019] According to this disclosure, in the interposer layer, multiple bumps are spaced apart from each other to improve the transfer success rate of the light-emitting diode.

[0020] The effects of this disclosure are not limited to those exemplified above, and this specification includes a variety of other effects. Attached Figure Description

[0021] The foregoing and other aspects, features and other advantages of this disclosure will become clearer from the following detailed description taken in conjunction with the accompanying drawings, in which:

[0022] Figure 1 This is a plan view of the intermediary layer according to an exemplary embodiment of the present disclosure;

[0023] Figure 2 This is a cross-sectional view of an intermediary layer according to an exemplary embodiment of the present disclosure;

[0024] Figures 3A to 3H This is a schematic diagram illustrating a method for manufacturing a display device using an interposer layer according to an exemplary embodiment of the present disclosure;

[0025] Figure 4 This is a cross-sectional view of an intermediary layer according to another exemplary embodiment of the present disclosure;

[0026] Figure 5 This is a cross-sectional view of the intermediary layer according to yet another exemplary embodiment of the present disclosure;

[0027] Figure 6A and Figure 6B This is a cross-sectional view of the intermediary layer according to yet another exemplary embodiment of the present disclosure;

[0028] Figure 7 This is a cross-sectional view of the intermediary layer according to yet another exemplary embodiment of the present disclosure;

[0029] Figure 8 This is a cross-sectional view of the intermediary layer according to yet another exemplary embodiment of the present disclosure;

[0030] Figure 9 This is a cross-sectional view of the intermediary layer according to yet another exemplary embodiment of the present disclosure;

[0031] Figure 10 These are schematic diagrams of a display device according to exemplary embodiments of the present disclosure; and

[0032] Figure 11 This is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure. Detailed Implementation

[0033] The advantages and features of this disclosure, as well as methods for achieving these advantages and features, will become clear from the following detailed description of exemplary embodiments in conjunction with the accompanying drawings. However, this disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. The exemplary embodiments are provided by way of example only to enable those skilled in the art to fully understand the disclosure and scope of this disclosure.

[0034] The shapes, dimensions, ratios, angles, numbers, etc., shown in the accompanying drawings to describe exemplary embodiments of this disclosure are merely examples, and this disclosure is not limited thereto. Throughout the specification, similar reference numerals generally indicate similar elements. Furthermore, in the following description of this disclosure, detailed descriptions of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of this disclosure. Terms such as “comprising,” “having,” and “consisting of” as used herein are generally intended to allow for the addition of additional components, unless these terms are used in conjunction with the term “only.” Unless otherwise expressly stated, any reference to the singular may include the plural.

[0035] Even without explicit explanation, components are interpreted as including the normal tolerance range.

[0036] When using terms such as “on,” “above,” “below,” and “next to” to describe the positional relationship between two parts, one or more parts may be located between the two parts, unless these terms are used with the terms “immediately following” or “directly.”

[0037] When a component or layer is disposed "on" another component or layer, the component or layer may be disposed directly "on" the other component or layer, or other components or layers may be placed in between.

[0038] Although the terms "first," "second," etc., are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, in the technical concept of this disclosure, the first component mentioned below can be the second component.

[0039] Throughout the specification, similar reference numerals generally indicate similar elements.

[0040] For ease of description, the dimensions and thickness of each component shown in the accompanying drawings are illustrated, and this disclosure is not limited to the dimensions and thickness of the components shown.

[0041] Features of various embodiments of this disclosure may be partially or completely dependent on or combined with each other, and may be technically interlocked and operated in various ways, and these embodiments may be performed independently or in association with each other.

[0042] The contents of this disclosure will be described in detail below with reference to the accompanying drawings.

[0043] Figure 1 This is a plan view of the intermediary layer according to an exemplary embodiment of the present disclosure. Figure 2 This is a cross-sectional view of an intermediary layer according to an exemplary embodiment of the present disclosure.

[0044] Reference Figure 1 and Figure 2 Intermediate layer 10 is a component for transferring multiple light-emitting diodes (LEDs) to a target substrate. Intermediate layer 10 can transport multiple LEDs disposed on a wafer or temporary substrate to the target substrate, such as the substrate of a display device. For example, laser processing can be performed on the wafer or temporary substrate in a non-contact state with intermediate layer 10 to transfer multiple LEDs to intermediate layer 10. However, this disclosure is not limited to this, and intermediate layer 10 can contact the upper part of the wafer or temporary substrate on which multiple LEDs are disposed to transfer multiple LEDs to intermediate layer 10. Furthermore, intermediate layer 10, on which multiple LEDs are temporarily attached, can be bonded to the target substrate to transfer multiple LEDs to the target substrate. Therefore, multiple LEDs are transferred from a temporary substrate to a target substrate using intermediate layer 10 to form an electronic product, such as a display device.

[0045] At this time, the light-emitting diode can be a light-emitting diode (LED) or a miniature light-emitting diode (miniature LED).

[0046] Intermediate layer 10 includes molded part 11 and multiple insulating members 12.

[0047] The molding member 11 is configured to support the various components included in the intermediate layer 10. The molding member 11 may be formed of a material harder than the insulating member 12 to minimize bending of the insulating member 12, as described below. The molding member 11 supports the insulating member 12, which is more flexible than the molding member 11, to minimize deformation of the insulating member 12 during transfer processing. Furthermore, the molding member 11 is formed of a material having a coefficient of thermal expansion smaller than that of the plurality of insulating members 12. For example, the molding member 11 may be formed of glass or quartz.

[0048] The molded part 11 includes a base 11a and a plurality of protrusions 11b spaced apart from each other on the base 11a.

[0049] Reference Figure 2 The base 11a is disposed below the molded part 11 and can support multiple protrusions 11b. The base 11a has a flat shape, but is not limited thereto.

[0050] Reference Figure 1 and Figure 2 Multiple bumps 11b are disposed on the base 11a, and the multiple bumps 11b can be arranged to be spaced apart from each other. For example, the multiple bumps 11b can be arranged on the base 11a in a matrix form. The multiple bumps 11b are formed of the same material as the base 11a and are integrally formed with the base 11a.

[0051] Each of the plurality of bumps 11b may include a receiving unit A. For example, refer to Figure 2 Each of the plurality of bumps 11b may include a bottom surface and a sidewall defining the receiving unit A. The bottom surface of each of the plurality of bumps 11b has a flat surface, and the sidewall surrounds the bottom surface to define the receiving unit A. For example, each of the plurality of bumps 11b may correspond to a cup shape.

[0052] The size of each housing unit A can correspond to the size of each of the plurality of light-emitting diodes (LEDs) described below. For example, a housing unit A can have a size large enough to accommodate one LED.

[0053] Intermediate layer 10 may include a plurality of insulating members 12. Each of the plurality of insulating members 12 may be disposed in each of the plurality of bumps 11b. For example, each of the plurality of insulating members 12 may be disposed in a receiving unit A of the plurality of bumps 11b. Thus, the size of one insulating member 12 may correspond to the size of one receiving unit A.

[0054] The plurality of insulating members 12 may be materials used to temporarily attach the plurality of light-emitting diodes to the molding member 11 during the process of transferring the plurality of light-emitting diodes to the target substrate. For example, during the process of transferring the plurality of light-emitting diodes to the target substrate, the plurality of light-emitting diodes may be fixed to the plurality of insulating members 12 and may be temporarily attached to the molding member 11 by means of the plurality of insulating members 12.

[0055] Each of the plurality of insulating members 12 may be formed of a viscoelastic and adhesive material, such as a gel. For example, the plurality of insulating members 12 may be formed of liquid silicone, polydimethylsiloxane (PDMS), polyurethane acrylate (PUA), polyethylene glycol (PEG), polymethyl methacrylate (PMMA), polystyrene (PS), epoxy resin, polyurethane resin or acrylic resin, but is not limited thereto.

[0056] During the process of transferring multiple light-emitting diodes to a target substrate, multiple insulating members 12 may be transferred to the target substrate together with the multiple light-emitting diodes.

[0057] The plurality of insulating components 12 may include materials that improve the efficiency of the plurality of light-emitting diodes and facilitate color conversion. For example, the plurality of insulating components 12 may include light diffusers, such as scattering particles, light conversion materials and / or fluorescent materials.

[0058] At this time, each of the plurality of insulating members 12 may include different types of scattering particles, light conversion materials, and / or fluorescent materials. For example, among the plurality of insulating members 12, adjacent insulating members 12 may include different types of scattering particles, light conversion materials, and / or fluorescent materials. Specifically, an insulating member 12 may contain a light-emitting diode that emits only one color, while another adjacent insulating member 12 may contain light-emitting diodes that emit different colors of light. For example, red, green, and blue light-emitting diodes may be arranged sequentially along the row and / or column directions. Therefore, among the plurality of insulating members 12, the plurality of insulating members 12 containing red light-emitting diodes may include materials that improve the luminous efficiency of the red light-emitting diodes. Among the plurality of insulating members 12, the plurality of insulating members 12 containing green light-emitting diodes may include materials that improve the luminous efficiency of the green light-emitting diodes. Among the plurality of insulating members 12, the plurality of insulating members 12 containing blue light-emitting diodes may include materials that improve the luminous efficiency of the blue light-emitting diodes. However, this disclosure is not limited thereto, and all the plurality of insulating members 12 may include the same type of scattering particles, light conversion materials, and / or fluorescent materials. As another exemplary embodiment, light-emitting diodes emitting the same color of light can be provided in a plurality of insulating members 12, and adjacent insulating members 12 include light-converting materials that convert light into different colors of light, so that different colors of light can be emitted.

[0059] Even if not shown in the figures, the interposer 10 may further include a plurality of alignment bumps, a plurality of alignment patterns, and a plurality of displacement measurement regions for alignment processing with a temporary substrate or a target substrate. For example, during the process of aligning the interposer 10 and the temporary substrate or target substrate, alignment keys disposed on the temporary substrate or target substrate are transferred to the plurality of alignment bumps of the interposer 10. Alternatively, the alignment patterns of the temporary substrate or target substrate may be aligned among the plurality of alignment patterns of the interposer 10. Furthermore, in the displacement measurement regions of the interposer 10, a laser passes through the interposer 10 to measure the parallelism of the interposer 10.

[0060] In the following text, reference will be made to Figures 3A to 3H The manufacturing process of a display device using an intermediary layer 10 according to an exemplary embodiment of the present disclosure is described.

[0061] Figures 3A to 3H This is a schematic diagram illustrating a method for manufacturing a display device using an interposer layer according to an exemplary embodiment of the present disclosure.

[0062] First, refer to Figure 3A Multiple insulating members 12 are filled into the molded part 11 to form an intermediate layer 10. Specifically, the multiple insulating members 12 are formed to fill each of the multiple receiving units A of the multiple protrusions 11b of the molded part 11.

[0063] Reference Figure 3B After placing a temporary substrate TS on which multiple light-emitting diodes (LEDs) are disposed, onto the interposer 10, the multiple LEDs on the temporary substrate TS are transferred to the interposer 10. At this time, the multiple LEDs can be configured to correspond to multiple receiving units A defined by multiple bumps 11b. At this time, on the temporary substrate TS, one LED can be configured to correspond to one receiving unit A. Therefore, in one receiving unit A, only one LED emitting light of a single color can be disposed among the multiple LEDs.

[0064] The transfer process of the light-emitting diodes (LEDs) can be performed in a non-contact state between the interposer 10 and the temporary substrate TS. For example, with the interposer 10 and the temporary substrate TS spaced apart from each other, a process of irradiating the temporary substrate TS with a laser can be performed. In this case, the temporary substrate TS can be a chip on which multiple LEDs are formed. Therefore, the multiple LEDs attached to the temporary substrate TS can fall from the temporary substrate TS to the interposer 10. For example, an adhesive layer (not shown) can be provided between the temporary substrate TS and the multiple LEDs to attach the multiple LEDs to the temporary substrate TS. In this case, the adhesive layer can be formed of a material that loses its adhesive strength through laser treatment. Therefore, in the area irradiated by the laser, the multiple LEDs separate from the temporary substrate TS, and the multiple LEDs separated from the temporary substrate TS fall into the interposer 10.

[0065] During the process of transferring multiple light-emitting diodes (LEDs) to the interposer layer 10, the multiple LEDs can be located in multiple receiving units A. At this time, some of the multiple LEDs disposed in the multiple receiving units A can be surrounded by multiple insulating members 12. In addition, some of the multiple LEDs are exposed from the multiple insulating members 12.

[0066] Specifically, each of the plurality of light-emitting diodes (LEDs) includes a first semiconductor layer 131, a light-emitting layer 132, a second semiconductor layer 133, a first electrode 134, a second electrode 135, and an encapsulation film 136.

[0067] A light-emitting layer 132 is disposed between the first semiconductor layer 131 and the second semiconductor layer 133, and each of the first semiconductor layer 131 and the second semiconductor layer 133 can be a layer formed by doping p-type and n-type impurities into a specific material. For example, the first semiconductor layer 131 and the second semiconductor layer 133 can be layers formed by doping p-type and n-type impurities into materials such as gallium nitride (GaN), indium aluminum phosphide (InAlP), or gallium arsenide (GaAs). The n-type impurity can be silicon (Si), germanium (Ge), and tin (Sn), and the p-type impurity can be magnesium (Mg), zinc (Zn), and beryllium (Be), but is not limited thereto.

[0068] A light-emitting layer 132 is disposed between a first semiconductor layer 131 and a second semiconductor layer 133. The light-emitting layer 132 is supplied with holes and electrons from the first semiconductor layer 131 and the second semiconductor layer 133 to emit light. The light-emitting layer 132 may be formed of a single-layer or multiple quantum well (MQW) structure, and may be formed, for example, of indium gallium nitride (InGaN) or gallium nitride (GaN), but is not limited thereto.

[0069] The first electrode 134 is disposed below the first semiconductor layer 131, and the second electrode 135 may be disposed on the second semiconductor layer 133. The first electrode 134 and the second electrode 135 may be configured with opaque conductive materials such as titanium (Ti), gold (Au), silver (Ag), copper (Cu), or alloys thereof; transparent conductive materials such as indium tin oxide (ITO) or indium zinc oxide (IZO); or a combination of opaque and transparent conductive materials. However, the materials of the first and second electrodes are not limited to these. Specifically, the electrodes of the first electrode 134 and the second electrode 135 disposed along the light emission direction may be formed of transparent conductive materials. For example, when light emitted from the light-emitting layer 132 travels to the first electrode 134, the first electrode 134 may be configured with a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited to these.

[0070] An encapsulation film 136 is provided covering at least a portion of the first semiconductor layer 131, the light-emitting layer 132, and the second semiconductor layer 133. The encapsulation film 136 is formed of an insulating material to protect the first semiconductor layer 131, the light-emitting layer 132, and the second semiconductor layer 133. The encapsulation film 136 may cover the side surfaces of the first semiconductor layer 131, the side surfaces of the light-emitting layer 132, and the side surfaces of the second semiconductor layer 133. Furthermore, the first electrode 134 and the second electrode 135 may be exposed from the encapsulation film 136. The encapsulation film 136 may be formed of any insulating material such as silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0071] At this time, the first electrodes 134, the first semiconductor layer 131, the light-emitting layer 132, and the second semiconductor layer 133 of the plurality of light-emitting diodes (LEDs) are disposed in the receiving unit A and surrounded by the insulating member 12. In contrast, the second electrodes 135 of the plurality of LEDs can be exposed from the insulating member 12. Even when... Figure 3B The diagram shows a second semiconductor layer 133 surrounded by an insulating member 12, but this disclosure is not limited thereto, and a portion of the second semiconductor layer 133 may be exposed from the insulating member 12. For example, in a plurality of light-emitting diodes (LEDs) transferred to the interposer layer 10, the second electrode 135 and a portion of the upper side of the second semiconductor layer 133 may protrude outside the receiving unit A. The second electrode 135 and a portion of the upper side of the second semiconductor layer 133 protruding outside the receiving unit A may be exposed from the insulating member 12.

[0072] Reference Figure 3C A target substrate TGS is disposed on an interposer layer 10 to which multiple light-emitting diodes (LEDs) are attached, and the multiple LEDs are transferred to the target substrate TGS.

[0073] The target substrate TGS can be a substrate for a final product (e.g., a display device) manufactured using the interposer 10, and can include multiple circuits and multiple signal lines for driving multiple light-emitting diodes (LEDs).

[0074] A bonding layer BDL can be provided on the target substrate TGS. In this case, the bonding layer BDL can fix multiple light-emitting diodes (LEDs) to the target substrate TGS. For example, heat or pressure can be applied to the target substrate TGS or the interposer 10, and multiple LEDs and multiple insulating members 12 attached to the interposer 10 can be attached or bonded to the target substrate TGS by heat or pressure.

[0075] Multiple bonding layers (BDLs) may include conductive materials and electrically connect the target substrate TGS and multiple light-emitting diodes (LEDs). For example, during the process of transferring multiple LEDs to the target substrate TGS, the multiple LEDs may be electrically connected to a configuration of multiple circuits and multiple signal lines of the target substrate TGS. For example, the second electrode 135 of each of the multiple LEDs exposed from multiple insulating members 12 may be electrically connected via the bonding layers (BDLs) to multiple driving circuits disposed in the target substrate TGS. For example, the multiple bonding layers (BDLs) may be formed as ink or paste made of silver (Ag) or carbon and conductive materials, and may be formed as a film, such as an anisotropic conductive film (ACF).

[0076] In the following text, for ease of description, a portion of the target substrate TGS on which an LED is disposed is magnified.

[0077] Reference Figure 3D After the interposer 10 is attached and bonded to the target substrate TGS, the molding 11 of the interposer 10 is separated from the target substrate TGS. At this time, multiple light-emitting diodes (LEDs) and multiple insulating members 12 are transferred to the target substrate TGS, and only the molding 11 of the interposer 10 can be separated from the target substrate TGS. During the process of attaching and bonding the multiple insulating members 12 to the target substrate TGS, the multiple insulating members 12 surrounding the multiple LEDs can maintain a strong adhesive strength to the target substrate TGS, while having a relatively weak adhesive strength to the molding 11. Therefore, in the process of transferring the multiple LEDs attached to the interposer 10 to the target substrate TGS, the multiple insulating members 12 of the interposer 10 are separated from the molding 11, but can maintain an attached state to the target substrate TGS.

[0078] Subsequently, a process can be performed to cure the multiple insulating members 12 transferred to the target substrate TGS by irradiating it with UV light or heat. The multiple insulating members 12, along with the multiple light-emitting diodes (LEDs), can be reused from the molded part 11 to transfer the multiple LEDs to another target substrate TGS. For example, after the process of transferring the multiple LEDs to the target substrate TGS, the receiving unit A of the molded part 11 is filled again with insulating members 12 to perform a process of forming an interposer layer 10. For example, this process can be repeated using one molded part 11. Figures 3A to 3D The process involves transferring multiple light-emitting diodes (LEDs) onto the target substrate TGS.

[0079] Reference Figure 3E To form a reflective layer surrounding the plurality of light-emitting diodes (LEDs), a metal layer ML is formed on the plurality of LEDs and the plurality of insulating members 12. The metal layer ML can be formed to correspond to the entire surface of the target substrate TGS. Therefore, the metal layer ML covers the top and side surfaces of the plurality of insulating members 12, and can also cover the top surface of the target substrate TGS exposed in the region between the plurality of insulating members 12. The metal layer ML can be formed of a metallic material with excellent reflective properties, such as aluminum (Al), silver (Ag), copper (Cu), palladium (Pd), or alloys thereof, but is not limited thereto.

[0080] Next, the patterned metal layer ML is processed. (Refer to...) Figure 3FA photoresist PR is applied to cover a portion of the metal layer ML. The photoresist PR can be used as a mask for the metal layer ML. For example, the photoresist PR surrounds the metal layer ML disposed on the side surfaces of the plurality of insulating members 12, and can be configured to expose the metal layer ML disposed on the top surface of the plurality of insulating members 12. The thickness of the photoresist PR can be less than the thickness of the plurality of insulating members 12. Therefore, the lower portion of the metal layer ML disposed on the side surfaces of the plurality of insulating members 12 can be covered by the photoresist PR, and the upper portion can be exposed through the photoresist PR. Even if not shown in the figures, the photoresist PR can expose the portion of the metal layer ML that contacts the top surface of the target substrate TGS. For example, the photoresist PR can be formed into multiple patterned shapes surrounding the plurality of insulating members 12 on the target substrate TGS.

[0081] Reference Figure 3G Subsequently, reflective sidewalls RFW are formed by removing the metal layer ML disposed in the region that does not overlap with the photoresist PR. For example, the metal layer ML disposed on the plurality of insulating members 12 and the metal layer ML disposed on the upper surface of the plurality of insulating members 12 can be removed. Thus, the top surface and the upper surface of the plurality of insulating members 12 can be exposed. Subsequently, the photoresist PR is removed to expose the reflective sidewalls RFW. Wherein, even if not shown in the figure, when the photoresist PR is formed to expose the portion of the metal layer ML disposed between the plurality of insulating members 12, the reflective sidewalls RFW can be formed to be spaced apart from each other between the plurality of insulating members 12. That is, a plurality of reflective sidewalls RFW surrounding the plurality of insulating members 12 can be formed on the target substrate TGS to be spaced apart from each other. The reflective sidewalls RFW cover the side surfaces of the plurality of insulating members 12 on the target substrate TGS and are disposed to surround the plurality of light-emitting diodes LED to improve the luminous efficiency of the plurality of light-emitting diodes LED transferred to the target substrate TGS.

[0082] Reference Figure 3HA connection electrode CE is formed to electrically connect the first electrode 134 of the light-emitting diodes (LEDs) and the target substrate TGS. First, a planarization layer PAC is formed on the reflective sidewall RFW and the target substrate TGS to planarize the top surface of the target substrate TGS. The planarization layer PAC is formed to cover the side surfaces of the plurality of insulating members 12. The thickness of the planarization layer PAC can correspond to the thickness of the plurality of insulating members 12. Furthermore, the planarization layer PAC covers the top and side surfaces of the reflective sidewall RFW, and can also cover the upper side surfaces of the plurality of insulating members 12 exposed from the reflective sidewall RFW. Then, a process is performed to expose one surface of the first electrode 134 by removing the plurality of insulating members 12 disposed above the first electrode 134 of the plurality of LEDs. Then, a connection electrode CE is formed on the planarization layer PAC, the plurality of insulating members 12, and the first electrode 134 to electrically connect the plurality of LEDs to multiple circuits and multiple signal lines of the target substrate TGS. The connecting electrode CE can cover the top surface of the first electrode 134 exposed from the plurality of insulating members 12, and extend from the top surface of the first electrode 134 to cover the top surface of the plurality of insulating members 12 and the planarization layer PAC. The planarization layer PAC may include contact holes exposing a plurality of circuits and signal lines of the target substrate TGS, and the connecting electrode CE can fill the contact holes of the planarization layer PAC. Therefore, the connecting electrode CE can electrically connect a plurality of light-emitting diodes (LEDs) to a configuration of a plurality of circuits and signal lines of the target substrate TGS. For example, the first electrode 134 of each of the plurality of LEDs can be electrically connected via the connecting electrode CE to a plurality of power lines disposed on the target substrate TGS.

[0083] In related technologies, an interlayer is used to temporarily attach multiple light-emitting diodes (LEDs) to transfer them to a target substrate. For example, an adhesive layer with viscoelastic and adhesive properties is used as the interlayer. For instance, the adhesive layer is formed from a PDMS-based material. However, PDMS-based materials have a high coefficient of thermal expansion. Specifically, the coefficient of thermal expansion of PDMS-based materials is approximately 310 μm / m℃. Therefore, when the adhesive layer is formed from a PDMS-based material, misalignment of the LEDs may be more severe due to temperature variations that occur during the LED transfer process. Specifically, in the case of high-resolution display devices, each pixel has a spacing of tens to hundreds of μm. Therefore, in the case of high-resolution display devices, even small errors can cause problems with transfer accuracy, and the quality of the final product will deteriorate.

[0084] Therefore, in the intermediate layer 10 and the method of manufacturing a display device using the intermediate layer 10 according to the exemplary embodiment of the present disclosure, the intermediate layer 10 includes: a molding part 11, the molding part 11 including a plurality of receiving units A; and a plurality of insulating members 12, to which a plurality of light-emitting diodes (LEDs) are fixed. In this case, the molding part 11 is formed of a material with a coefficient of thermal expansion smaller than that of the plurality of insulating members 12, and the plurality of insulating members 12 with a large coefficient of thermal expansion can be disposed only in the plurality of receiving units A. Therefore, compared to the example where insulating members to which a plurality of LEDs are fixed are disposed on the entire surface of the intermediate layer, the area of ​​the insulating members 12 with a large coefficient of thermal expansion is reduced. Therefore, even if the molding part 11 with a smaller coefficient of thermal expansion has a small deviation due to temperature changes, the variation of the intermediate layer 10 can be small. Therefore, in the intermediate layer 10 and the method of manufacturing a display device using the intermediate layer 10 according to the exemplary embodiment of the present disclosure, misalignment problems caused by temperature changes can be minimized, and the transfer accuracy of the LEDs can be improved. Therefore, the degradation of the final product quality can be suppressed.

[0085] In related technologies, a contact transfer method is used to transfer multiple light-emitting diodes (LEDs) to a target substrate. For example, a transfer method is used where multiple LEDs attached to a temporary substrate are attached and pressed against an interposer, and then multiple LEDs attached to the interposer are attached and pressed against the target substrate. Therefore, in the contact transfer method, all LEDs disposed on the temporary substrate contact one surface of the interposer, and all LEDs disposed on the temporary substrate are transferred to the interposer. In this case, the multiple LEDs disposed on the interposer are aligned with the LEDs disposed on the temporary substrate. Therefore, when a growth substrate on which LEDs are formed is used as a temporary substrate, or when the LEDs attached to the temporary substrate are aligned with the LEDs formed on the growth substrate, the LEDs disposed on the target substrate can also have the same alignment as the LEDs disposed on the growth substrate. Therefore, uneven defects arising from the positional distribution of LEDs on the growth substrate can also be seen from the target substrate.

[0086] In contrast, the interposer 10 and the method for manufacturing a display device using the interposer 10 according to the exemplary embodiments of the present disclosure employ a non-contact transfer method. In the interposer 10 and the method for manufacturing a display device using the interposer 10 according to the exemplary embodiments of the present disclosure, only some of the multiple light-emitting diodes (LEDs) disposed on the temporary substrate TS can be transferred to the interposer 10. Therefore, in the interposer 10 and the method for manufacturing a display device using the interposer 10 according to the exemplary embodiments of the present disclosure, the multiple LEDs formed on a growth substrate are uniformly dispersed to be disposed on the target substrate TGS. Therefore, even if the multiple LEDs attached to the interposer 10 are transferred to the target substrate TGS, uneven defects of the multiple LEDs caused by the position of the growth substrate can be suppressed from being visible from the target substrate TGS.

[0087] Furthermore, in the intermediate layer 10 and the method of manufacturing a display device using the intermediate layer 10 according to the exemplary embodiments of this disclosure, a non-contact transfer method is used, which allows other light-emitting diodes (LEDs) to be transferred to the same intermediate layer 10 even when LEDs are transferred to a portion of the intermediate layer 10. For example, in the case of the contact transfer method, when an LED is transferred to a portion of the intermediate layer, there may be a problem where the transferred LED interferes with other LEDs attached to the temporary substrate. In contrast, in the case of the non-contact transfer method, even if the LEDs attached to the temporary substrate TS or the wafer are positioned at an overlap with the LEDs transferred to the intermediate layer 10, the transfer process can be performed while the LEDs attached to the temporary substrate TS or the wafer are spaced apart from the LEDs transferred to the intermediate layer 10. Therefore, LEDs transferred from multiple temporary substrates TS or multiple wafers can be disposed on one intermediate layer 10. Therefore, an intermediate layer 10 with a region larger than that of the temporary substrate TS or the wafer can be used. Therefore, compared with the contact transfer method, the number of transfer processes for multiple LEDs can be reduced, thereby achieving process optimization.

[0088] Furthermore, in the interposer 10 and the method of manufacturing a display device using the interposer 10 according to the exemplary embodiments of this disclosure, a material having viscoelasticity and adhesiveness (e.g., gel) is used for multiple insulating members 12 to reduce the impact applied to the multiple light-emitting diodes (LEDs) during non-contact transfer. In the interposer 10 and the method of manufacturing a display device using the interposer 10 according to the exemplary embodiments of this disclosure, a non-contact transfer method is used, by which multiple LEDs attached to a temporary substrate TS or a wafer fall onto the interposer 10. Therefore, the multiple LEDs collide with the interposer 10 at high speed, making it possible to apply an impact to the multiple LEDs. At this time, the multiple insulating members 12 formed of a fluid gel material accommodate the multiple LEDs to reduce the impact force applied to the multiple LEDs.

[0089] Furthermore, in the intermediate layer 10 and the method of manufacturing a display device using the intermediate layer 10 according to an exemplary embodiment of this disclosure, a plurality of insulating members 12 include scattering particles, light conversion materials, and / or fluorescent materials, and are transferred to a target substrate TGS together with a plurality of light-emitting diodes (LEDs). Therefore, compared to an example where insulating materials including scattering particles, light conversion materials, and / or fluorescent materials are respectively formed on the plurality of LEDs transferred to the target substrate TGS, the manufacturing process is simplified, enabling process optimization.

[0090] Furthermore, in the intermediate layer 10 and the method of manufacturing a display device using the intermediate layer 10 according to the exemplary embodiments of the present disclosure, reflective sidewalls RFW are formed around a plurality of light-emitting diodes (LEDs) and a plurality of insulating members 12 transferred to the target substrate TGS, so as to improve the luminous efficiency of the plurality of light-emitting diodes (LEDs) transferred to the target substrate TGS.

[0091] Furthermore, in the intermediate layer 10 and the method of manufacturing a display device using the intermediate layer 10 according to the exemplary embodiments of this disclosure, the plurality of bumps 11b of the intermediate layer 10 are spaced apart from each other on the base 11a. Therefore, during the process of bonding and transferring the plurality of light-emitting diodes (LEDs) fixed to the intermediate layer 10 to the target substrate TGS, the plurality of bumps 11b contact the target substrate TGS, and the space between the plurality of bumps 11b may not contact the target substrate TGS. Therefore, when the plurality of LEDs fixed to the intermediate layer 10 and the target substrate TGS are pressurized, the force can be applied only to the plurality of bumps 11b. Therefore, compared to the example where the plurality of bumps of the intermediate layer are connected to each other, the contact area with the target substrate TGS is reduced, and the force applied to the plurality of bumps 11b per unit area can be increased. Therefore, the problem of the plurality of LEDs fixed to the intermediate layer 10 not being transferred to the target substrate TGS can be reduced. Therefore, in the intermediate layer 10 of the exemplary embodiment of the present disclosure and the method of manufacturing a display device using the intermediate layer 10, the plurality of bumps 11b of the intermediate layer 10 are arranged to be spaced apart from each other to improve the transfer accuracy of the light-emitting diodes (LEDs).

[0092] Figure 4 This is a cross-sectional view of an intermediary layer according to another exemplary embodiment of the present disclosure. Figure 4 Intermediate layer 40 and Figures 1 to 3H The only difference between the intermediate layers 10 is the addition of a coating 43, but the other configurations are essentially the same, so redundant descriptions will be omitted.

[0093] Reference Figure 4 A coating 43 is provided on the molded part 11 of the intermediate layer 40. The coating 43 may be configured to cover the bottom surface and sidewalls of each of the plurality of bumps 11b on the molded part 11. The coating 43 may include at least one or more of indium tin oxide (ITO), polytetrafluoroethylene, and fluorine materials.

[0094] Among them, although in Figure 4 The diagram shows coating 43 spaced apart from each other among a plurality of bumps 11b, but the present disclosure is not limited thereto, and the coating 43 disposed in the plurality of bumps 11b may be integrally formed to be connected to each other.

[0095] In another exemplary embodiment of the present disclosure, the intermediate layer 40 and the method of manufacturing a display device using the intermediate layer 40 are described, wherein the molding 11 of the intermediate layer 40, which includes a plurality of housing units A, is formed of a material whose coefficient of thermal expansion is less than that of the plurality of insulating members 12 to which the plurality of light-emitting diodes (LEDs) are fixed. Therefore, misalignment problems due to temperature changes during the process of transferring the plurality of LEDs can be minimized, and the transfer accuracy of the LEDs can be improved.

[0096] In another exemplary embodiment of the present disclosure, the interposer 40 and the method of manufacturing a display device using the interposer 40 are provided, wherein a plurality of bumps 11b of the interposer 40 are spaced apart from each other on the base 11a. Therefore, during the process of transferring a plurality of light-emitting diodes (LEDs), the force applied to the plurality of bumps 11b per unit area increases, thereby improving the transfer accuracy of the LEDs. In another exemplary embodiment of the present disclosure, the interposer 40 and the method of manufacturing a display device using the interposer 40 include a coating 43 covering the plurality of bumps 11b of the interposer 40. The coating 43 can improve the release property of the plurality of insulating members 12 and the plurality of bumps 11b disposed in the receiving unit A of the plurality of bumps 11b. For example, when the release property of the plurality of insulating members 12 and the plurality of bumps 11b disposed in the receiving unit A deteriorates, the plurality of insulating members 12 form a strong adhesive strength with the molding part 11 including the plurality of bumps 11b, which may result in the inability to transfer to the target substrate TGS. Therefore, there may be a problem where multiple light-emitting diodes (LEDs) surrounded by multiple insulating members 12 are not transferred to the target substrate TGS. Therefore, in another exemplary embodiment of the interposer 40 according to this disclosure and in a method of manufacturing a display device using the interposer 40, a coating 43 is formed on multiple bumps 11b of the interposer 40 to improve the mold release properties of the multiple bumps 11b and the multiple insulating members 12, thereby improving the transfer success rate of the multiple LEDs.

[0097] Figure 5 This is a cross-sectional view of an intermediary layer according to yet another exemplary embodiment of the present disclosure. Figure 5 Intermediate layer 50 and Figure 4 The difference in the intermediate layer 40 is the addition of a bridge 51c, but the other configurations are basically the same, so redundant descriptions will be omitted.

[0098] Reference Figure 5 The molding part 51 of the intermediary layer 50 includes a bridging portion 51c disposed on the base 11a. The bridging portion 51c can connect a plurality of protrusions 11b disposed at intervals on the base 11a. For example, the bridging portion 51c can fill the gaps between the plurality of protrusions 11b on the base 11a.

[0099] The bridging portion 51c is formed of the same material as the base 11a and the plurality of protrusions 11b, so as to be integrally formed with the base 11a and the plurality of protrusions 11b. For example, the bridging portion 51c may be formed of glass or quartz.

[0100] The height of the sidewalls of the protrusions 11b protruding between adjacent protrusions 11b can vary depending on the thickness of the bridging portion 51c. For example, the distance d1 between the bottom surfaces of the protrusions 11b and the top surfaces of the sidewalls of the protrusions 11b can be greater than the distance d2 between the top surface of the bridging portion 51c and the top surfaces of the sidewalls of the protrusions 11b. Furthermore, the greater the thickness of the bridging portion 51c, the smaller the distance d2 between the top surface of the bridging portion 51c and the top surfaces of the sidewalls of the protrusions 11b. For example, the thickness of the bridging portion 51c can correspond to the height of the sidewalls of the protrusions 11b. Therefore, the top surface of each of the protrusions 11b is disposed on the same plane as the top surface of the bridging portion 51c, and the transfer surface of the interposer layer 50 can be configured as a flat surface by the surfaces of the insulating members 12, the side surfaces of the protrusions 11b, and the surface of the bridging portion 51c. Therefore, during the process of transferring multiple light-emitting diodes (LEDs) to the target substrate TGS, the contact area between the interposer 50 and the target substrate TGS is increased, and the force applied to the multiple bumps 11b per unit area can be reduced.

[0101] Furthermore, in another exemplary embodiment of the interposer 50 according to this disclosure and a method for manufacturing a display device using the interposer 50, the molding part 51 of the interposer 50 includes a bridging portion 51c that connects a plurality of protrusions 11b spaced apart from each other. Therefore, the protrusion height of the sidewalls of the protrusions 11b between adjacent protrusions 11b can vary depending on the thickness of the bridging portion 51c. Thus, the flatness of the transfer surface of the interposer 50 can be adjusted, and the force applied per unit area to the plurality of protrusions 11b can be adjusted to easily adjust the transfer process of the light-emitting diode (LED).

[0102] Figure 6A and Figure 6B This is a cross-sectional view of an intermediary layer according to yet another exemplary embodiment of the present disclosure. Figure 6A Intermediate layer 60A and Figures 1 to 3H The difference between the intermediate layers 10 is the sidewalls of multiple bumps 61b1 and multiple insulating members 62A, and Figure 6B Intermediate layer 60B and Figures 1 to 3H The differences between the intermediate layers 10 are the sidewalls of the multiple bumps 61b2 and the multiple insulating members 62B. However, the other configurations are essentially the same, so redundant descriptions will be omitted.

[0103] Reference Figure 6A The molded part 61A of the intermediate layer 60A includes a plurality of protrusions 61b1 spaced apart from each other on the base 11a. (See reference...) Figure 6AThe inner surfaces of the plurality of protrusions 61b1 are inclined relative to the bottom surface. For example, the angle θ1 between the inner surfaces of the plurality of protrusions 61b1 and the bottom surface can be greater than 90°. For example, the inner surfaces of the plurality of protrusions 61b1 connected to the bottom surface of the plurality of protrusions 61b1 form an obtuse angle with the bottom surface of the plurality of protrusions 61b1. Therefore, the cross-sectional shape of the receiving unit A of each of the plurality of protrusions 61b1 can be trapezoidal.

[0104] Reference Figure 6A Multiple insulating members 62A can be disposed in receiving units A of multiple protrusions 61b1 in the intermediate layer 60A. The cross-sectional shape of the multiple insulating members 62A can be a trapezoidal shape corresponding to the cross-sectional shape of the receiving unit A of each of the multiple protrusions 61b1.

[0105] Reference Figure 6B The molded part 61B of the intermediate layer 60B includes a plurality of protrusions 61b2 spaced apart from each other on the base 11a. (See reference...) Figure 6B The inner surfaces of the plurality of protrusions 61b2 are inclined relative to the bottom surface. For example, the angle θ2 between the inner surfaces of the plurality of protrusions 61b2 and the bottom surface is less than 90°. That is, the inner surfaces of the plurality of protrusions 61b2 connected to the bottom surface of the plurality of protrusions 61b2 form an acute angle with the bottom surface of the plurality of protrusions 61b2.

[0106] Therefore, the cross-sectional shape of the receiving unit A in each of the plurality of protrusions 61b2 can be trapezoidal.

[0107] Reference Figure 6B Multiple insulating members 62B can be disposed in receiving units A of each of the multiple protrusions 61b2 in the intermediate layer 60B. The cross-sectional shape of the multiple insulating members 62B can be a trapezoidal shape corresponding to the cross-sectional shape of the receiving unit A of each of the multiple protrusions 61b2.

[0108] In another exemplary embodiment of the present disclosure, the intermediate layers 60A and 60B, and the method of manufacturing a display device using the intermediate layers 60A and 60B, are molded members 61A and 61B comprising a plurality of receiving units A, formed of a material whose coefficient of thermal expansion is less than that of a plurality of insulating members 62A and 62B to which a plurality of light-emitting diodes (LEDs) are fixed. Therefore, misalignment problems due to temperature changes during the transfer of the plurality of LEDs can be minimized, and the transfer accuracy of the LEDs can be improved.

[0109] In another exemplary embodiment of the present disclosure, in the interposers 60A and 60B and in a method of manufacturing a display device using the interposers 60A and 60B, a plurality of bumps 61b1 and 61b2 of the interposers 60A and 60B are spaced apart from each other on the base 11a. Therefore, during the process of transferring a plurality of light-emitting diodes (LEDs), the force applied per unit area to the plurality of bumps 61b1 and 61b2 is increased to improve the transfer accuracy of the LEDs.

[0110] In the interposers 60A and 60B according to another exemplary embodiment of the present disclosure, and in the method of manufacturing a display device using the interposers 60A and 60B, the inner surfaces of the plurality of bumps 61b1 and 61b2, which are connected to the bottom surfaces of the plurality of bumps 61b1 and 61b2, are inclined relative to the bottom surfaces of the plurality of bumps 61b1 and 61b2. For example, in the interposers 60A and 60B according to another exemplary embodiment of the present disclosure, and in the method of manufacturing a display device using the interposers 60A and 60B, the angle between the inner surfaces of the plurality of bumps 61b1 and 61b2 and the bottom surface is adjusted to adjust the ease of transfer of the plurality of light-emitting diodes (LEDs) and the plurality of insulating members 62A and 62B. For example, when the molding 61A of the interposer 60A includes a plurality of bumps 61b1 whose bottom surface and inner surface form an obtuse angle, the plurality of light-emitting diodes (LEDs) and the plurality of insulating members 62A can be easily separated from the molding 61A during the process of transferring the plurality of LEDs to the target substrate TGS. Furthermore, when the molding part 61B of the interposer 60B includes a plurality of bumps 61b2 with acute angles formed on the bottom surface and the inner surface, the fixing strength for securing the plurality of light-emitting diodes (LEDs) and the plurality of insulating members 62B to the interposer 60B can be improved. Therefore, easy separation of the plurality of LEDs and the plurality of insulating members 62B from the interposer 60B can be suppressed. Therefore, in the interposers 60A and 60B according to another exemplary embodiment of this disclosure, and in the method of manufacturing a display device using the interposers 60A and 60B, the angle between the inner surface and the bottom surface of the plurality of bumps 61b1 and 61b2 is adjusted to adjust the ease of transfer of the plurality of LEDs and the plurality of insulating members 62A and 62B.

[0111] In another exemplary embodiment of the present disclosure, in the interposers 60A and 60B and the method of manufacturing a display device using the interposers 60A and 60B, the angle between the inner surfaces and the bottom surface of the plurality of bumps 61b1 and 61b2 is adjusted to improve the luminous efficiency of the plurality of light-emitting diodes (LEDs). For example, when the plurality of LEDs are transferred to a target substrate TGS together with the plurality of insulating members 62A and 62B, light emitted from the plurality of LEDs passes through the plurality of insulating members 62A and 62B and can be refracted or reflected from the interface of the plurality of insulating members 62A and 62B. Therefore, the shape of the plurality of insulating members 62A and 62B can be adjusted according to the angle between the inner surfaces and the bottom surface of the plurality of bumps 61b1 and 61b2, and the luminous efficiency of the plurality of LEDs can be improved according to the shape of the plurality of insulating members 62A and 62B. Furthermore, the plurality of reflective sidewalls RFW are provided along the shape of the plurality of insulating members 62A and 62B. Therefore, the shape of the reflective sidewall RFW can be adjusted according to the angle between the inner surfaces of the plurality of bumps 61b1 and 61b2 and the bottom surface, and the luminous efficiency of the plurality of light-emitting diodes (LEDs) can be improved according to the shape of the reflective sidewall RFW. Therefore, in the interposer layers 60A and 60B according to another exemplary embodiment of this disclosure, and in the method of manufacturing a display device using interposer layers 60A and 60B, adjusting the angle between the inner surfaces of the plurality of bumps 61b1 and 61b2 and the bottom surface improves the luminous efficiency of the plurality of light-emitting diodes (LEDs).

[0112] Figure 7 This is a cross-sectional view of an intermediary layer according to yet another exemplary embodiment of the present disclosure. Figure 7 Intermediate layer 70 and Figures 1 to 3H The only difference between the intermediate layers 10 is that multiple bumps 71b are added to the molded part 71 and multiple insulating members 72 are different, but the other configurations are basically the same, so redundant descriptions will be omitted.

[0113] Reference Figure 7 The bottom surface of each of the plurality of bumps 71b includes a plurality of patterns P. The plurality of patterns P may include a plurality of recesses and / or a plurality of protrusions.

[0114] Multiple insulating members 72 may be disposed in receiving unit A of each of the multiple protrusions 71b. The multiple insulating members 72 may include multiple recessed portions and / or multiple protrusions corresponding to multiple patterns P. For example, the multiple insulating members 72 may have a hexahedral shape formed by a surface including multiple recessed portions and / or multiple protrusions and five flat surfaces, but are not limited thereto.

[0115] In another exemplary embodiment of the interposer 70 and the method of manufacturing a display device using the interposer 70 according to the present disclosure, the molding 71 of the interposer 70, which includes a plurality of housing units A, is formed of a material whose coefficient of thermal expansion is less than that of the plurality of insulating members 72 to which the plurality of light-emitting diodes (LEDs) are fixed. Therefore, misalignment problems due to temperature changes during the process of transferring the plurality of LEDs can be minimized, and the transfer accuracy of the LEDs can be improved.

[0116] In another exemplary embodiment of the interposer 70 according to this disclosure and a method of manufacturing a display device using the interposer 70, a plurality of bumps 71b of the interposer 70 are configured to be spaced apart from each other on the base 11a. Therefore, during the process of transferring a plurality of light-emitting diodes (LEDs), the force applied to the plurality of bumps 71b per unit area increases, thereby improving the transfer accuracy of the LEDs.

[0117] In another exemplary embodiment of the interposer 70 and the method of manufacturing a display device using the interposer 70 according to the present disclosure, the bottom surface of the plurality of bumps 71b includes a plurality of patterns P. Therefore, the plurality of insulating members 72 disposed in the plurality of receiving units A include a plurality of recessed portions and / or a plurality of protrusions corresponding to the plurality of patterns P. Therefore, light emitted from the plurality of light-emitting diodes (LEDs) passes through the plurality of insulating members 72 and is refracted or reflected from the plurality of recessed portions and / or protrusions corresponding to the plurality of patterns P. Therefore, in another exemplary embodiment of the interposer 70 and the method of manufacturing a display device using the interposer 70 according to the present disclosure, the plurality of recessed portions and / or protrusions corresponding to the plurality of patterns P are formed in the plurality of insulating members 72 to improve the luminous efficiency of the plurality of light-emitting diodes (LEDs).

[0118] Figure 8 This is a cross-sectional view of an intermediary layer according to yet another exemplary embodiment of the present disclosure. Figure 8 Intermediate layer 80 and Figures 1 to 3H The only difference between the intermediate layers 10 is the multiple bumps 81b and multiple insulating members 82 of the molded part 81, but the other configurations are basically the same, so redundant descriptions will be omitted.

[0119] Reference Figure 8The inner surfaces of the plurality of protrusions 81b are curved surfaces. For example, the inner surface of each of the plurality of protrusions 81b may be adjacent to the base 11a as it gets closer to the center of each of the plurality of protrusions 81b. For example, the inner surfaces of the plurality of protrusions 81b may have a hemispherical shape or a semi-cylindrical shape, but are not limited thereto. The inner surfaces of the plurality of protrusions 81b may define a plurality of receiving units A. For example, each of the plurality of receiving units A may have a hemispherical shape or a semi-cylindrical shape corresponding to the inner surfaces of the plurality of protrusions 81b, but is not limited thereto.

[0120] Multiple insulating members 82 may be disposed in receiving unit A of each of the multiple bumps 81b. The shape of each insulating member 82 may correspond to the shape of receiving unit A of each of the multiple bumps 81b. For example, the shape of each insulating member 82 may be hemispherical or semi-cylindrical, but is not limited thereto.

[0121] In another exemplary embodiment of the interposer 80 and the method of manufacturing a display device using the interposer 80 according to the present disclosure, the molding 81 of the interposer 80, which includes a plurality of housing units A, is formed of a material whose coefficient of thermal expansion is less than that of the plurality of insulating members 82 to which the plurality of light-emitting diodes (LEDs) are fixed. Therefore, misalignment problems due to temperature changes during the process of transferring the plurality of LEDs can be minimized, and the transfer accuracy of the LEDs can be improved.

[0122] In another exemplary embodiment of the interposer 80 according to this disclosure and a method of manufacturing a display device using the interposer 80, a plurality of bumps 81b of the interposer 80 are configured to be spaced apart from each other on the base 11a. Therefore, during the process of transferring a plurality of light-emitting diodes (LEDs), the force applied to the plurality of bumps 81b per unit area increases, thereby improving the transfer accuracy of the LEDs.

[0123] In another exemplary embodiment of the interposer 80 and the method of manufacturing a display device using the interposer 80 according to the present disclosure, the inner surfaces of the plurality of bumps 81b are formed as curved surfaces. Therefore, the shape of the plurality of insulating members 82 can be changed according to the inner surfaces of the plurality of bumps 81b, and the luminous efficiency of the plurality of light-emitting diodes (LEDs) can be improved according to the shape of the plurality of insulating members 82. Furthermore, the shape of the reflective sidewall RFW can be changed according to the shape of the inner surfaces of the plurality of bumps 81b, and the luminous efficiency of the plurality of light-emitting diodes (LEDs) can be improved according to the shape of the reflective sidewall RFW.

[0124] Figure 9 This is a cross-sectional view of an intermediary layer according to yet another exemplary embodiment of the present disclosure. Figure 9 Intermediate layer 90 and Figures 1 to 3H The only difference between the intermediate layers 10 is that the base 91a of the molded part 91 includes multiple recessed patterns CP and the multiple bumps 91b and multiple insulating members 92 are different. However, the other configurations are essentially the same, so redundant descriptions will be omitted.

[0125] Reference Figure 9 The base 91a includes a plurality of recessed patterns CP. Each of the plurality of recessed patterns CP can be configured to correspond to each of the plurality of protrusions 91b. For example, each of the plurality of recessed patterns CP can be located in the central portion of each of the plurality of protrusions 91b. The plurality of recessed patterns CP can be hemispherical or semi-cylindrical, but are not limited thereto. Furthermore, the thickness of the base 91a decreases toward the central portion of the plurality of protrusions 91b, but is not limited thereto. Even when... Figure 9 The diagram shows that the base 91a includes a recessed pattern CP corresponding to a bump 91b, but the present disclosure is not limited thereto, and the base 91a may include a plurality of recessed patterns CP corresponding to a bump 91b.

[0126] Multiple bumps 91b are disposed on the base 91a. Each of the multiple bumps 91b can be configured to surround each of the multiple recessed patterns CP. For example, the inner surface of each bump 91b can be connected to each recessed pattern CP. For example, the cross-sectional shape of the inner surface of each bump 91b can be formed as a straight line, but is not limited thereto, and can be formed as a curve.

[0127] Multiple insulating members 92 may be disposed in receiving units A and multiple recessed patterns CP of each of the multiple bumps 91b. The shape of each insulating member 92 may correspond to the shape of the receiving unit A of each of the multiple bumps 91b and the shape of the multiple recessed patterns CP. For example, each of the multiple insulating members 92 may have a dome shape, but is not limited thereto.

[0128] In another exemplary embodiment of the interposer 90 and the method of manufacturing a display device using the interposer 90 according to the present disclosure, the molding part 91 of the interposer 90, which includes a plurality of housing units A, is formed of a material whose coefficient of thermal expansion is less than that of the plurality of insulating members 92 to which the plurality of light-emitting diodes (LEDs) are fixed. Therefore, misalignment problems due to temperature changes during the process of transferring the plurality of LEDs can be minimized, and the transfer accuracy of the LEDs can be improved.

[0129] In another exemplary embodiment of the interposer 90 according to this disclosure and a method of manufacturing a display device using the interposer 90, a plurality of bumps 91b of the interposer 90 are configured to be spaced apart from each other on the base 91a. Therefore, during the process of transferring a plurality of light-emitting diodes (LEDs), the force applied to the plurality of bumps 91b per unit area increases, thereby improving the transfer accuracy of the LEDs.

[0130] In another exemplary embodiment of the interposer 90 and the method of manufacturing a display device using the interposer 90 according to the present disclosure, the base 91a includes a plurality of recessed patterns CP, and each of the plurality of bumps 91b is configured to surround each of the plurality of recessed patterns CP. Therefore, the shape of each of the plurality of insulating members 92 corresponds to the shape of the receiving unit A of each of the plurality of bumps 91b and the shape of the plurality of recessed patterns CP. For example, each of the plurality of insulating members 92 may be formed to have a dome shape. Therefore, the luminous efficiency of the plurality of light-emitting diodes (LEDs) can be improved according to the shape of the plurality of insulating members 92, and the luminous efficiency of the plurality of LEDs can be improved by adjusting the shape of the reflective sidewalls RFW disposed on the plurality of insulating members 92.

[0131] Figure 10 This is a schematic diagram of a display device according to an exemplary embodiment of the present disclosure. Figure 10 For ease of description, among the various components of the display device 100, only the display panel PN, gate driver GD, data driver DD, and timing controller TC are shown.

[0132] Reference Figure 10 The display device 100 includes: a display panel PN comprising a plurality of sub-pixels SP; a gate driver GD and a data driver DD supplying various signals to the display panel PN; and a timing controller TC for controlling the gate driver GD and the data driver DD.

[0133] Drivers, such as gate drivers (GD), data drivers (DD), and timing controllers (TC), can be connected to the display panel (PN) in various ways. For example, the gate driver (GD) can be mounted as a gate in-panel (GIP) in the non-active region (NA), or as a gate in-active region (GIA) between multiple sub-pixels (SP) in the active region (AA).

[0134] The display panel PN is a configuration for displaying images to the user and includes multiple subpixels SP. In the display panel PN, multiple scan lines SL and multiple data lines DL intersect each other, and the multiple subpixels SP are respectively connected to the scan lines SL and data lines DL. Additionally, although not shown in the figure, each of the multiple subpixels SP can be connected to a high-potential power line, a low-potential power line, and a reference line.

[0135] In the display panel PN, an active area AA and a non-active area NA surrounding the active area AA can be defined.

[0136] The active area AA is the area in the display device 100 where an image is displayed. Within the active area AA, multiple sub-pixels SP, which configure multiple pixels PX, and circuitry for driving the multiple sub-pixels SP can be provided. The multiple sub-pixels SP are the smallest unit for configuring the active area AA, and n sub-pixels SP can form one pixel PX. In each of the multiple sub-pixels SP, a light-emitting diode (LED) and a thin-film transistor (TFT) for driving the LED can be provided. Depending on the type of the display panel PN, the multiple LEDs can be defined in different ways. For example, when the display panel PN is an inorganic light-emitting display panel, the LEDs can be either light-emitting diodes (LEDs) or miniature light-emitting diodes (LEDs).

[0137] In the active region AA, multiple signal lines are provided to transmit various signals to multiple sub-pixels SP. For example, the multiple signal lines may include multiple data lines DL supplying data voltage to each of the multiple sub-pixels SP and multiple scan lines SL supplying gate voltage to each of the multiple sub-pixels SP. The multiple scan lines SL extend in one direction in the active region AA to connect to the multiple sub-pixels SP, and the multiple data lines DL extend in a direction different from the said direction in the active region AA to connect to the multiple sub-pixels SP. In addition, low-potential power lines and high-potential power lines may also be provided in the active region AA, but are not limited thereto.

[0138] In the non-active region NA, no image is displayed, but links, pad electrodes, or driver ICs such as gate driver ICs or data driver ICs can be set to transmit signals to the sub-pixel SP of the active region AA.

[0139] Figure 11 This is a cross-sectional view of a display device according to an exemplary embodiment of the present disclosure.

[0140] Reference Figure 11 The display panel PN comprises multiple pixels formed by multiple sub-pixels SP. Each of the multiple sub-pixels SP includes a light-emitting diode (LED) and pixel circuitry to emit light independently. A pixel PX may include one or more first sub-pixels, one or more second sub-pixels, and one or more third sub-pixels. For example, a pixel may include two first sub-pixels, two second sub-pixels, and two third sub-pixels. In this case, the first sub-pixel is a red sub-pixel, the second sub-pixel is a green sub-pixel, and the third sub-pixel may be a blue sub-pixel, but is not limited to this.

[0141] Next, let's refer to... Figure 11 In each of the plurality of sub-pixels SP of the display panel PN of the display device 100 according to an exemplary embodiment of the present disclosure, a substrate 110, a buffer layer 111, a gate insulating layer 112, a first interlayer insulating layer 113, a second interlayer insulating layer 114, a first planarization layer 115, a second planarization layer 116, a third planarization layer 117, a protective layer 118, an optical film MF, a black dam BB, a driving transistor DT, a light-emitting diode LED, a plurality of reflective electrodes RE, a plurality of connecting electrodes CE, a light-shielding layer LS, an auxiliary electrode BCNT, a first conductive layer CL1, and a second conductive layer CL2 are provided.

[0142] First, the substrate 110 is a component for supporting various parts included in the display device 100, and can be formed of an insulating material. For example, the substrate 110 can be formed of glass or resin. Furthermore, the substrate 110 can be configured to include polymers or plastics, or can be formed of a flexible material.

[0143] A light-shielding layer LS is provided in each of the plurality of sub-pixels SP on the substrate 110. The light-shielding layer LS blocks light from entering from the bottom of the substrate 110 onto the active layer ACT of the driving transistor DT, which will be described below. The light incident on the active layer ACT of the driving transistor DT is blocked by the light-shielding layer LS to minimize leakage current.

[0144] A buffer layer 111 is provided on the substrate 110 and the light-shielding layer LS. The buffer layer 111 can reduce the penetration of moisture or impurities through the substrate 110. For example, the buffer layer 111 can be configured as a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto. However, depending on the type of substrate 110 or the type of transistor, the buffer layer 111 can be omitted, but is not limited thereto.

[0145] A driving transistor DT is disposed on the buffer layer 111. The driving transistor DT includes an active layer ACT, a gate electrode GE, a source electrode SE, and a drain electrode DE.

[0146] An active layer ACT is disposed on the buffer layer 111. The active layer ACT can be formed of a semiconductor material such as oxide semiconductor, amorphous silicon or polycrystalline silicon, but is not limited thereto.

[0147] A gate insulating layer 112 is disposed on the active layer ACT. The gate insulating layer 112 is an insulating layer that insulates the active layer ACT from the gate electrode GE, and may be configured as a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0148] A gate electrode GE is disposed on the gate insulating layer 112. The gate electrode GE may be made of a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited thereto.

[0149] A first interlayer insulating layer 113 and a second interlayer insulating layer 114 are provided on the gate electrode GE. Contact holes are formed in the first interlayer insulating layer 113 and the second interlayer insulating layer 114, connecting to the active layer ACT through their source electrode SE and drain electrode DE. The first interlayer insulating layer 113 and the second interlayer insulating layer 114 are insulating layers for protecting components beneath them, and can be configured as a single layer or a double layer of silicon oxide (SiOx) or silicon nitride (SiNx), but are not limited thereto.

[0150] An active electrode SE and a drain electrode DE are disposed on the second interlayer insulating layer 114, and the source electrode SE and drain electrode DE are electrically connected to the active layer ACT. The source electrode SE and drain electrode DE may be configured with conductive materials such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr) or alloys thereof, but are not limited thereto.

[0151] In this specification, a first interlayer insulating layer 113 and a second interlayer insulating layer 114, i.e., multiple insulating layers, are described as being disposed between the gate electrode GE and the source electrode SE and the drain electrode DE. However, it is possible to provide only one insulating layer between the gate electrode GE and the source electrode SE and the drain electrode DE, but this is not a limitation.

[0152] Furthermore, as shown in the figure, when multiple insulating layers, such as a first interlayer insulating layer 113 and a second interlayer insulating layer 114, are provided between the gate electrode GE and the source electrode SE and drain electrode DE, an electrode can also be formed between the first interlayer insulating layer 113 and the second interlayer insulating layer 114. The additionally formed electrode can form a capacitor with other configurations provided below the first interlayer insulating layer 113 or above the second interlayer insulating layer 114.

[0153] For example, a first conductive layer CL1 is disposed between a first interlayer insulating layer 113 and a second interlayer insulating layer 114, and a second conductive layer CL2 electrically connected to the first conductive layer CL1 is disposed on the second interlayer insulating layer 114. The first conductive layer CL1 and the second conductive layer CL2 are configured to overlap with the gate electrode GE of the driving transistor DT to form a capacitor with the gate electrode GE of the driving transistor DT. Therefore, various conductive layers such as the first conductive layer CL1 and the second conductive layer CL2 are disposed on the substrate 110 to form a capacitor.

[0154] Next, an auxiliary electrode BCNT is provided on the gate insulating layer 112. The auxiliary electrode BCNT is an electrode used to apply a voltage to the light-shielding layer LS below the buffer layer 111. For example, the light-shielding layer LS is electrically connected to another configuration provided on the substrate 110 by means of the auxiliary electrode BCNT so that a voltage can be applied. The light-shielding layer LS, which is energized by means of the auxiliary electrode BCNT, does not operate as a floating gate, and the fluctuation of the threshold voltage of the driving transistor DT generated by the floating light-shielding layer LS can be minimized.

[0155] A power line VL is disposed on the second interlayer insulating layer 114. The power line VL, together with the driving transistor DT, is electrically connected to the light-emitting diode (LED) so that the LED can emit light. The power line VL is a low-potential power line, but is not limited to this. The power line VL can be configured with a conductive material such as copper (Cu), aluminum (Al), molybdenum (Mo), nickel (Ni), titanium (Ti), chromium (Cr), or alloys thereof, but is not limited to this.

[0156] A first planarization layer 115 is provided on the driving transistor DT and the power line VL. The first planarization layer 115 can planarize the upper part of the substrate 110 on which the driving transistor DT is provided. The first planarization layer 115 can be configured as a single layer or a double layer, and can be formed, for example, by a photoresist or an acrylic-based organic material, but is not limited thereto.

[0157] A plurality of reflective electrodes RE spaced apart from each other are disposed on the first planarization layer 115. The plurality of reflective electrodes RE are disposed below the plurality of light-emitting diodes (LEDs) for electrical connection to the LEDs. The plurality of reflective electrodes RE are configured to reflect light emitted from the plurality of LEDs onto the top of the substrate 110 and are formed in a shape corresponding to each of the plurality of sub-pixels SP. The plurality of reflective electrodes RE reflect light emitted from the plurality of LEDs and also serve as electrodes for electrically connecting the plurality of LEDs and pixel circuitry. Specifically, the plurality of reflective electrodes RE can be connected to the drain electrode DE of the driving transistor DT through contact holes in the first planarization layer 115. That is, the plurality of reflective electrodes RE can electrically connect the second electrode 135 of the plurality of LEDs and the driving transistor DT. The plurality of reflective electrodes RE are formed of a conductive material with excellent reflective properties. For example, the plurality of reflective electrodes RE can be formed of a metallic material with excellent reflective properties, such as aluminum (Al), silver (Ag), copper (Cu), palladium (Pd), or alloys thereof, but are not limited thereto.

[0158] Multiple bonding layers BDL can be disposed on multiple reflective electrodes RE. Multiple light-emitting diodes (LEDs) disposed on the multiple reflective electrodes RE can be fixed by the multiple bonding layers BDL. Furthermore, the multiple bonding layers BDL can electrically connect the multiple reflective electrodes RE and the second electrodes 135 of the multiple LEDs. (See reference...) Figures 3A to 3F Multiple bonding layers (BDLs) are described in detail, therefore redundant descriptions will be omitted. Specifically, when conductive materials are individually disposed to electrically connect the second electrodes 135 of the multiple reflective electrodes (REs) and the multiple light-emitting diodes (LEDs), the multiple bonding layers (BDLs) can be formed of insulating material.

[0159] Multiple light-emitting diodes (LEDs) can be disposed on multiple bonding layers (BDL) and in each of multiple sub-pixels (SPs). The multiple LEDs are disposed on the multiple bonding layers (BDL) to be electrically connected to a reflective electrode (RE). Specifically, the second electrode 135 of the multiple LEDs and the reflective electrode (RE) can be electrically connected via the multiple bonding layers (BDL).

[0160] Multiple light-emitting diodes (LEDs) are elements that emit light through an electric current, and include a first LED emitting red light, a second LED emitting green light, and a third LED emitting blue light, and are combined to achieve light of various colors, including white. For example, an LED can be a light-emitting diode LED or a micro LED, but is not limited to these.

[0161] Multiple light-emitting diodes (LEDs) may include a first semiconductor layer 131, a light-emitting layer 132, a second semiconductor layer 133, a first electrode 134, a second electrode 135, and an encapsulation film 136. In the following description, it is assumed that the multiple LEDs have a lateral structure, but the type of multiple LEDs is not limited to this. (See also...) Figures 3A to 3F The description of multiple light-emitting elements (LEDs) is detailed, so redundant descriptions will be omitted.

[0162] Multiple insulating members 12 are disposed around multiple light-emitting diodes (LEDs) on multiple reflective electrodes RE. (See reference...) Figures 3A to 3F Multiple insulating components 12 are described in detail, so redundant descriptions will be omitted.

[0163] Multiple reflective sidewalls (RFWs) surrounding multiple light-emitting diodes (LEDs) and multiple insulating members 12 are disposed on multiple reflective electrodes RE. The multiple reflective sidewalls (RFWs) are a configuration that reflects light traveling laterally from the multiple LEDs onto the top of the substrate 110, and can be configured to surround the multiple LEDs. (See also...) Figures 3A to 3F Multiple reflective sidewall RFWs are described in detail, so redundant descriptions will be omitted.

[0164] A second planarization layer 116 is disposed on multiple reflective electrodes RE. The second planarization layer 116 is configured to surround multiple light-emitting diodes (LEDs), multiple insulating members 12, and multiple reflective sidewalls RFW to fix and protect the multiple LEDs. The second planarization layer 116 may be configured as a single layer or a double layer, and may be formed, for example, by a photoresist or an acrylic-based organic material, but is not limited thereto.

[0165] A common electrode CE is disposed on the entire surface of the substrate 110 on the second planarization layer 116. The common electrode CE is the electrode that electrically connects the power line VL and the plurality of light-emitting diodes (LEDs). The common electrode CE can be electrically connected to the power line VL through the contact holes of the second planarization layer 116 and the through holes of the first planarization layer 115. Therefore, the common electrode CE can be electrically connected to the first electrode 134 of the plurality of light-emitting diodes (LEDs).

[0166] The common electrode CE is formed of a transparent conductive material to transmit light emitted from multiple light-emitting diodes (LEDs). For example, the common electrode CE can be formed of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), but is not limited to these.

[0167] A black dam BB is provided on the common electrode CE. The black dam BB can be configured to be spaced apart from the light-emitting diode (LED) by a predetermined interval.

[0168] Black dam BB can be formed from opaque materials to reduce color mixing between multiple subpixels SP, and can be formed, for example, from black resin, but is not limited to this.

[0169] A third planarization layer 117 is provided on the common electrode CE and the black embankment BB. The third planarization layer 117 can planarize the upper part of the black embankment BB and fill the space between the black embankment BB. The third planarization layer 117 can be configured as a single layer or a double layer, and can be formed, for example, by a photoresist or an acrylic-based organic material, but is not limited thereto.

[0170] A protective layer 118 is provided on the third planarization layer 117 and the black embankment BB. The protective layer 118 is a layer for protecting the components below the protective layer 118, and may be configured as a single layer or double layer of translucent epoxy resin, silicon oxide (SiOx) or silicon nitride (SiNx), but is not limited thereto.

[0171] An optical film MF can be provided on the protective layer 118. The optical film MF can be a functional film that achieves higher image quality while protecting the display device 100. For example, the optical film MF may include an anti-scattering film, an anti-glare film, an anti-reflection film, a low-reflection film, an OLED transmittance controllable film, or a polarizer, but is not limited to these.

[0172] Exemplary embodiments of this disclosure can also be described as follows:

[0173] According to one aspect of this disclosure, an interposer layer includes: a base; and a plurality of protrusions spaced apart from each other on the base. Each of the plurality of protrusions includes a sidewall extending upward from the base to define a receiving unit.

[0174] The interposer may also include multiple insulating members in multiple receiving units respectively disposed in multiple bumps. The coefficient of thermal expansion of the base and the multiple bumps may be less than the coefficient of thermal expansion of the multiple insulating members.

[0175] Multiple insulating components may include scattering particles, light conversion materials, or fluorescent materials.

[0176] The interposer may also include a coating that covers the sidewalls of each of the plurality of bumps and includes one or more of indium tin oxide (ITO), polytetrafluoroethylene, and fluorine materials. The base and the plurality of bumps may be formed of glass or quartz, and the plurality of insulating members may be formed of liquid silicon or acrylic material.

[0177] The intermediate layer may also include bridging portions on the base to connect the lower portions of multiple bumps.

[0178] Each of the plurality of bumps may also include a bottom surface facing the base and surrounded by sidewalls, and the bottom surface may include a flat surface.

[0179] The inner surface of the sidewall that connects to the bottom surface can form an obtuse angle with the bottom surface.

[0180] The inner surface of the sidewall, which connects to the bottom surface, can form an acute angle with the bottom surface.

[0181] Each of the plurality of bumps may also include a bottom surface facing the base and surrounded by sidewalls, and the bottom surface may include a plurality of patterns.

[0182] The inner surface of the sidewall can be formed as a curved surface.

[0183] The base may include multiple recessed patterns in the area overlapping with multiple receiving units, and each of the multiple recessed patterns may be connected to the inner surface of the sidewall.

[0184] According to another aspect of this disclosure, a method of manufacturing a display device includes: placing a temporary substrate over an interposer, wherein a plurality of light-emitting diodes (LEDs) including a first electrode and a second electrode are disposed on the temporary substrate, the interposer including a plurality of insulating members; transferring the plurality of LEDs on the temporary substrate to the plurality of insulating members respectively; and transferring the plurality of LEDs to the target substrate by attaching the interposer to the target substrate. Transferring to the plurality of insulating members includes surrounding a portion of a side surface of each LED and a surface of the first electrode with the plurality of insulating members, and transferring to the target substrate includes transferring the plurality of insulating members together with the plurality of LEDs to the target substrate.

[0185] After being transferred to the target substrate, the method of manufacturing the display device may further include: exposing a surface of the first electrode by removing a portion of a plurality of insulating members; and forming connection electrodes on a plurality of light-emitting diodes to electrically connect the target substrate and the first electrode.

[0186] When transferring to multiple insulating components, one surface of the second electrode may be exposed by the multiple insulating components, and transferring to the target substrate may include electrically connecting one surface of the second electrode to the target substrate.

[0187] After being transferred to the target substrate, the method of manufacturing the display device may further include forming a plurality of reflective layers on the target substrate covering the side surfaces of a plurality of insulating members.

[0188] Forming multiple reflective layers may include forming a metal layer covering the top and side surfaces of multiple insulating members; and exposing the top and side surfaces of multiple insulating members by removing portions of the metal layer covering the top and side surfaces of the multiple insulating members.

[0189] After exposing the top and upper surfaces of the plurality of insulating members, the method of manufacturing the display device may further include: exposing a surface of the first electrode by removing a portion of the plurality of insulating members; and forming a connection electrode on the plurality of light-emitting diodes that electrically connects the target substrate and the first electrode.

[0190] The transfer to each of the multiple insulating components can be performed in a non-contact state between the interlayer and the temporary substrate.

[0191] After being transferred to the target substrate, the method for manufacturing the display device may also include thermosetting or UV curing of multiple insulating components transferred to the target substrate.

[0192] Before placing a temporary substrate on which a plurality of light-emitting diodes are disposed, the method of manufacturing the display device may further include each of a plurality of accommodating cells filled with a plurality of insulating members in an intermediate layer.

[0193] While exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and may be embodied in many different forms without departing from the technical concept of the present disclosure. Therefore, exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concept of the present disclosure. The scope of the technical concept of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all respects and do not limit the present disclosure. The scope of protection of the present disclosure should be interpreted based on the appended claims, and all technical concepts within their equivalents should be interpreted as falling within the scope of the present disclosure.

Claims

1. An intermediary layer, comprising: Base; as well as Multiple protrusions spaced apart from each other on the base Each of the plurality of bumps includes a sidewall extending upward from the base to define a receiving unit.

2. The intermediary layer according to claim 1, further comprising: Multiple insulating components are respectively disposed in multiple receiving units within the multiple protrusions. The coefficient of thermal expansion of the base and the coefficient of thermal expansion of the plurality of bumps are less than the coefficient of thermal expansion of the plurality of insulating components.

3. The intermediary layer according to claim 2, wherein, The plurality of insulating components include scattering particles, light conversion materials, or fluorescent materials.

4. The intermediary layer according to claim 2, further comprising: The coating covers the sidewalls of each of the plurality of bumps and comprises one or more of indium tin oxide (ITO), polytetrafluoroethylene, and fluorine materials. The base and the plurality of bumps are formed of glass or quartz, and the plurality of insulating components are formed of liquid silicon or acrylic material.

5. The intermediary layer according to claim 1, further comprising: A bridging portion on the base to connect the lower part of the plurality of protrusions.

6. The intermediary layer according to claim 1, wherein, Each of the plurality of bumps also includes a bottom surface facing the base and surrounded by the sidewalls, and The bottom surface includes a flat surface.

7. The intermediary layer according to claim 6, wherein, The inner surface of the sidewall that connects to the bottom surface forms an obtuse angle with the bottom surface.

8. The intermediary layer according to claim 6, wherein, The inner surface of the sidewall, which connects to the bottom surface, forms an acute angle with the bottom surface.

9. The intermediary layer according to claim 1, wherein, Each of the plurality of bumps also includes a bottom surface facing the base and surrounded by the sidewalls, and The bottom surface includes multiple patterns.

10. The intermediary layer according to claim 1, wherein, The inner surface of the sidewall is formed as a curved surface.

11. The intermediary layer according to claim 1, wherein, The base includes a plurality of recessed patterns in the region overlapping with the plurality of receiving units, and each of the plurality of recessed patterns is connected to the inner surface of the sidewall.

12. A method of manufacturing a display device, the method comprising: A temporary substrate is placed on top of an intermediate layer, and a plurality of light-emitting diodes, including a first electrode and a second electrode, are disposed on the temporary substrate. The intermediate layer includes a plurality of insulating components. The plurality of light-emitting diodes on the temporary substrate are respectively transferred to the plurality of insulating components; as well as The plurality of light-emitting diodes are transferred to the target substrate by attaching the interposer layer to the target substrate. The transfer to the plurality of insulating members includes surrounding a portion of the side surface of each of the light-emitting diodes and a surface of the first electrode with the plurality of insulating members, and Transferring to the target substrate includes transferring the plurality of insulating components together with the plurality of light-emitting diodes to the target substrate.

13. The method of manufacturing a display device according to claim 12, further comprising: After being transferred to the target substrate The surface of the first electrode is exposed by removing a portion of the plurality of insulating components; as well as A connection electrode is formed on the plurality of light-emitting diodes to electrically connect the target substrate to the first electrode.

14. The method of manufacturing a display device according to claim 13, wherein, During the transfer to the plurality of insulating members, one surface of the second electrode is exposed by the plurality of insulating members, and Transferring to the target substrate includes electrically connecting one surface of the second electrode to the target substrate.

15. The method of manufacturing a display device according to claim 12, further comprising: After being transferred to the target substrate Multiple reflective layers are formed on the target substrate, covering the side surfaces of the multiple insulating components.

16. The method of manufacturing a display device according to claim 15, wherein, Forming the plurality of reflective layers includes: Forming a metal layer covering the top and side surfaces of the plurality of insulating components; and The top and upper surfaces of the plurality of insulating components are exposed by removing a portion of the metal layer that covers the upper and top surfaces of the plurality of insulating components.

17. The method of manufacturing a display device according to claim 16, further comprising: After exposing the top and upper surfaces of the plurality of insulating members, The surface of the first electrode is exposed by removing a portion of the plurality of insulating components; as well as A connection electrode is formed on the plurality of light-emitting diodes to electrically connect the target substrate to the first electrode.

18. The method of manufacturing a display device according to claim 12, wherein, The transfer to each of the plurality of insulating members is performed in a non-contact state between the intermediate layer and the temporary substrate.

19. The method of manufacturing a display device according to claim 12, further comprising: After being transferred to the target substrate The plurality of insulating components are transferred to the target substrate by thermosetting or UV curing.

20. The method of manufacturing a display device according to claim 12, further comprising: Before placing the temporary substrate on which the plurality of light-emitting diodes are disposed. Each of the plurality of accommodating units in the intermediate layer is filled with the plurality of insulating members.

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