Compatible vacuum adsorption hot plate

Abstract

The invention discloses a compatible vacuum adsorption hot plate, which comprises a plate body and a vacuum adsorption system, and is characterized in that the vacuum adsorption system comprises a plurality of vacuum adsorption air passages arranged on the plate body and a vacuumizing device communicated with the plurality of vacuum adsorption air passages; and a vacuum adsorption air passage opening and closing adjusting piece for realizing opening and closing of the vacuum adsorption air passage is arranged on the vacuum adsorption air passage. According to the compatible vacuum adsorption hot plate, adjustable and controllable operation of the vacuum adsorption area is achieved, wafers of different specifications can be flexibly adapted, the excellent adsorption effect is guaranteed, vacuum resource utilization can be optimized, vacuum resources are saved, the production cost is reduced, and the design requirement for universality of the hot plate is met.

Description

Technical Field

[0001] This invention relates to the field of semiconductor manufacturing process equipment technology, and specifically to a wafer heating chuck (or ESC - electrostatic chuck) for semiconductor thin film deposition, etching, annealing and other process equipment, and more particularly to a compatible vacuum adsorption heating chuck. Background Technology

[0002] In semiconductor manufacturing, wafers need to be precisely, flatly, and without slippage fixed on trays in the process chamber. Vacuum adsorption heating plates are key components for achieving this function. They generate negative pressure through internal vacuum channels to firmly adsorb the wafer onto the plate surface, while also providing heating and cooling functions to precisely control the wafer's process temperature. For example, Chinese patent document CN115142050B discloses a vacuum adsorption heating plate and device. The plate surface has inner and outer channels corresponding to the center of the same surface. Between the inner and outer channels, or even within the inner channels, multiple evenly distributed connecting channels are provided to achieve airflow coupling between the inner and outer channels. Axially symmetrically distributed evacuation holes are also provided on the plate surface, located on the connecting channels. The heating plate has a vacuum adsorption function and can provide uniform heating to the entire wafer, resulting in better film deposition quality.

[0003] With the development of semiconductor technology, production lines need to process wafers of various sizes (such as 4-inch, 6-inch, 8-inch, 12-inch, etc.). Traditional hot plates typically have vacuum adsorption channels (including main channels and branch apertures) designed for single-size wafers.

[0004] When processing wafers of different sizes, the following technical problems arise: First, poor compatibility: It requires changing to different specifications of hot plates or using different tooling fixtures, resulting in long equipment downtime, reduced production efficiency, and increased equipment investment and operating costs.

[0005] Secondly, poor adsorption effect: Using the same hot plate to adsorb wafers of different sizes will lead to problems such as poor adsorption effect. For example, if a hot plate designed for 12-inch wafers is used to adsorb 8-inch wafers, the adsorption holes may be distributed on the periphery or outside of the wafer, resulting in insufficient effective adsorption area and uneven adsorption force. During the process, wafer displacement, warping or temperature unevenness may occur, which will seriously affect the process yield.

[0006] Third, there is a waste of vacuum resources: when hot plates made for large-size wafers are used to adsorb small-size wafers, the surrounding gas channels will be directly exposed in the vacuum chamber, which will increase the load on the vacuum system, affect the stability of the chamber pressure, and increase energy consumption.

[0007] Fourth, the structure is complex: existing hot plates are designed with multiple pipes and each air passage is controlled by a solenoid valve. However, such a design results in a complex hot plate structure and high cost.

[0008] Therefore, there is an urgent need to design a vacuum adsorption hot plate that can flexibly adapt to wafers of different specifications, ensure excellent adsorption effect, and optimize the utilization of vacuum resources. Summary of the Invention

[0009] The purpose of this invention is to solve the problems of poor compatibility, poor adsorption effect, waste of vacuum resources and complex structure of existing vacuum adsorption heating plates. It provides a compatible vacuum adsorption heating plate that can meet the adsorption requirements of multiple wafer sizes. It can achieve safe, stable and efficient fixation of wafers of various sizes with one heating plate, improve equipment utilization, reduce production costs and ensure adsorption uniformity and temperature uniformity in the process.

[0010] The technical solution adopted by the present invention to achieve its purpose is: a compatible vacuum adsorption hot plate, including a plate body and a vacuum adsorption system. The vacuum adsorption system includes a plurality of vacuum adsorption channels arranged on the plate body and a vacuum pumping device connected to the plurality of vacuum adsorption channels. Vacuum adsorption channel opening and closing adjustment components are provided on the vacuum adsorption channels to realize the opening and closing of the vacuum adsorption channels. This compatible vacuum adsorption heating plate, through its structural design of vacuum adsorption channels on the plate body, ensures that all vacuum adsorption channels are connected to the same vacuum pumping device. Each vacuum adsorption channel is equipped with an opening and closing adjustment component. During use, the corresponding vacuum adsorption channel is selected for opening based on the size of the wafer being adsorbed. This is achieved by adjusting the opening and closing of the corresponding vacuum adsorption channel using the adjustment component, thus meeting the vacuum adsorption requirements of different wafers. This allows for the use of a single set of vacuum adsorption heating plates to meet the adsorption requirements of various wafer sizes without the need to replace the heating plate. The adsorption area is adjustable and controllable, ensuring an effective adsorption area and uniform adsorption force. During the process, wafer displacement, warping, or temperature unevenness will not occur, guaranteeing excellent adsorption results. This avoids waste of vacuum resources and saves costs. The vacuum adsorption operation of the heating plate can be achieved using a single vacuum pumping device, making the structure simple and operation convenient. This compatible vacuum adsorption hot plate can flexibly adapt to wafers of different specifications, ensure excellent adsorption effect, optimize the utilization of vacuum resources, save vacuum resources, reduce production costs, and achieve the universal design requirements of the hot plate.

[0011] Preferably, the vacuum adsorption gas channel includes several annular main vacuum adsorption gas channels and at least one connecting vacuum adsorption gas channel. As a preferred embodiment, the vacuum adsorption gas channel adopts an annular design structure. Specifically, one annular main vacuum adsorption gas channel is set according to the wafer size of each specification. All annular main vacuum adsorption gas channels are interconnected through at least one connecting vacuum adsorption gas channel, thereby enabling the selection and activation of different adsorption regions for different wafers, i.e., activating different annular main vacuum adsorption gas channels, ensuring the adsorption effect. This achieves adjustable and controllable operation of the adsorption region.

[0012] Preferably, an axial airway is provided between the annular vacuum adsorption main airway and the vacuum adsorption connecting airway, and the vacuum adsorption airway opening and closing adjustment component is adjusted and disposed within the axial airway. To achieve on / off control of the annular vacuum adsorption main airway, an opening and closing adjustment component is provided inside the axial airway at the junction of the annular vacuum adsorption main airway and the vacuum adsorption connecting airway. By adjusting the opening and closing adjustment component, the corresponding annular vacuum adsorption main airway can be opened or closed, thereby enabling the selection of the vacuum adsorption region.

[0013] Preferably, several annular vacuum adsorption main gas channels are concentrically arranged on the surface of the disk, radiating outwards from the center of the disk. The vacuum adsorption connecting gas channels are radially arranged inside the disk and connected to a vacuum pumping device via a main extraction channel. As a preferred embodiment, the annular vacuum adsorption main gas channels are arranged outwards from the center of the disk, with different diameter annular vacuum adsorption main gas channels designed for wafers of different sizes, thereby achieving effective adsorption of the wafers. The vacuum adsorption connecting gas channels are connected to the vacuum pumping device via a main extraction channel, ensuring that all annular vacuum adsorption main gas channels are controlled by the same vacuum pumping device, resulting in a simple structure and convenient operation.

[0014] Preferably, the vacuum adsorption airway opening and closing adjustment component is provided with axial air inlets and radial air inlets along the axial and radial directions, respectively. The axial and radial air inlets on the vacuum adsorption airway opening and closing adjustment component allow for the opening or closing of the airway by rotating the component.

[0015] Preferably, the vacuum adsorption airway opening and closing adjustment component includes an integrally formed adjustment component body, the axial air inlet hole passes through both axial ends of the adjustment component body, the radial air inlet hole passes through both radial sides of the adjustment component body, and the axial air inlet hole and the radial air inlet hole are interconnected.

[0016] Preferably, guide sealing surfaces and adjustment structures are respectively provided at both axial ends of the main body of the adjustment component, and external threads are provided on the outer circumference of the main body of the adjustment component. The adjustment structure is provided to facilitate the rotation operation of the main body of the adjustment component by a manual tightening tool, and the external threads are provided to facilitate the threaded sealing connection with the axial air passage, so that the main body of the adjustment component can be screwed into the axial air passage without affecting the adsorption of the wafer.

[0017] Preferably, the vacuuming device includes a vacuum connector mounted on the disc and an external vacuum pump, wherein the vacuum connector is connected to the vacuum pump via a vacuum pipe.

[0018] Preferably, the disk body includes a heat-conducting disk and a liquid-cooling disk fixedly connected to the heat-conducting disk, and a temperature sensor is connected to the disk body. The presence of the heat-conducting disk and liquid-cooling disk ensures that the disk body has both heating and cooling functions, enabling precise control of the wafer's process temperature.

[0019] Preferably, the heat-conducting plate is provided with a heating element, the liquid-cooling plate is provided with a liquid-cooling channel, and the liquid-cooling plate is provided with a coolant inlet connector and a coolant outlet connector that communicate with the liquid-cooling channel.

[0020] The beneficial effects of this invention are as follows: Compared with existing technologies, this compatible vacuum adsorption hot plate has good compatibility; one hot plate can meet the processing needs of wafers of various sizes, greatly reducing equipment changeover and debugging time, and improving the flexibility and production efficiency of the production line. Its adsorption performance is excellent and reliable. Through zoned control, it ensures that the adsorption force is uniformly applied to the effective area of ​​the wafer regardless of its size, avoiding problems such as insufficient edge adsorption force or vacuum leakage, thereby improving process stability and product yield. It is energy-efficient and highly effective. When adsorbing small-sized wafers, only the necessary zones are activated, avoiding ineffective vacuum suction, reducing the load and energy consumption of the vacuum system, and helping to maintain the stability of the process chamber pressure. Its structure is reasonable and easy to implement. This solution can be achieved through precision machining during the hot plate manufacturing stage without requiring overly complex structural modifications.

[0021] This compatible vacuum adsorption hot plate enables adjustable and controllable operation of the vacuum adsorption area, flexibly adapts to wafers of different specifications, ensures excellent adsorption effect, optimizes vacuum resource utilization, saves vacuum resources, reduces production costs, and meets the universal design requirements of the hot plate. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of a compatible vacuum adsorption heating plate of the present invention.

[0023] Figure 2 This is a schematic diagram of the compatible vacuum adsorption heating plate of the present invention from another angle.

[0024] Figure 3 This is an exploded structural diagram of the compatible vacuum adsorption heating plate of the present invention.

[0025] Figure 4 This is a cross-sectional view of the compatible vacuum adsorption heating plate of the present invention.

[0026] Figure 5 This is a cross-sectional exploded view of the compatible vacuum adsorption heating plate of the present invention.

[0027] Figure 6 This is a schematic diagram of the structure of the heat-conducting plate 5 in this invention.

[0028] Figure 7 This is an exploded structural diagram of the heat-conducting plate 5 in this invention.

[0029] Figure 8 This is a schematic diagram of a vacuum adsorption airway opening and closing adjustment component in this invention.

[0030] Figure 9 This is a cross-sectional view of the vacuum adsorption airway opening and closing adjustment component in this invention.

[0031] Figure 10 This is a schematic diagram of one structure of the liquid cooling plate in this invention.

[0032] Figure 11 This is an exploded structural diagram of the liquid cooling plate in this invention.

[0033] Figure 12 This is a schematic diagram of the structure of the compatible vacuum adsorption heating plate of the present invention (applied to wafers up to 8 inches).

[0034] Figure 13 This is a schematic diagram of the operation of the compatible vacuum adsorption heating plate of the present invention when applied to an 8-inch wafer.

[0035] Figure 14 This is a schematic diagram of the operation of the compatible vacuum adsorption heating plate of the present invention when applied to a 4-inch wafer.

[0036] Figure 15 This is a schematic diagram of the operation of the compatible vacuum adsorption heating plate of the present invention when applied to a 6-inch wafer.

[0037] Figure 16 This is a schematic diagram of a compatible vacuum adsorption heating plate in Embodiment 2 of the present invention.

[0038] Figure 17 This is a schematic diagram of a compatible vacuum adsorption heating plate in Embodiment 3 of the present invention.

[0039] Figure 18 This is a cross-sectional view of the compatible vacuum adsorption heating plate in Embodiment 3 of the present invention.

[0040] In the diagram: 1. Disc body, 2. Heating element, 3. Temperature sensor, 4. Vacuum adsorption system. 5. Heat-conducting plate; 51. Electric heating bath; 6. Liquid cooling plate; 61. Liquid cooling channel; 62. Coolant inlet connector; 63. Coolant outlet connector; 7. Vacuum adsorption airway; 71. Vacuum adsorption main airway; 71-1, 4-inch vacuum adsorption main airway; 71-2, 6-inch vacuum adsorption main airway; 71-3, 8-inch vacuum adsorption main airway; 71-4, 12-inch vacuum adsorption main airway. 72. Vacuum adsorption connecting airway; 73. Axial airway; 74. Main suction airway; 75. External port; 76. Branch suction airway. 8. Air extraction connector, 9. Vacuum adsorption airway opening and closing adjustment component; 91. Adjustment component body; 92. Axial air inlet; 93. Radial air inlet; 94. Guide sealing surface; 95. Adjustment structure; 96. External thread. 10. Hex socket head cap screws. Detailed Implementation

[0041] The invention will now be described in further detail with reference to the accompanying drawings.

[0042] Example 1: exist Figures 1 to 5 In the illustrated embodiment, a compatible vacuum adsorption heating plate includes a plate body 1 and a vacuum adsorption system 4. The vacuum adsorption system 4 includes a plurality of vacuum adsorption channels 7 disposed on the plate body 1 and a vacuum pumping device communicating with the plurality of vacuum adsorption channels 7. Vacuum adsorption channel opening and closing adjustment components 9 are provided on the vacuum adsorption channels 7 to realize the opening and closing of the vacuum adsorption channels. A temperature sensor 3 is connected to the plate body 1.

[0043] The plate body 1 includes a heat-conducting plate 5 and a liquid-cooling plate 6. A heating element 2 is disposed inside the heat-conducting plate 5.

[0044] The vacuum device includes a vacuum connector 8 and an external vacuum pump mounted on the disk body 1. The vacuum connector 8 is connected to the vacuum pump via a vacuum pipe.

[0045] The vacuum adsorption duct 7 includes several annular main vacuum adsorption ducts 71 and at least one connecting vacuum adsorption duct 72. Each annular main vacuum adsorption duct and the connecting vacuum adsorption duct 72 are connected by an axial duct 73, and the vacuum adsorption duct opening and closing adjustment component 9 is adjusted and disposed within the axial duct 73. The several annular main vacuum adsorption ducts 71 are concentrically arranged around the center of the disk body, extending outward from the center of the disk body. The connecting vacuum adsorption duct 72 is radially disposed inside the disk body 1 and connected to a vacuum pumping device through a main extraction duct 74.

[0046] See Figure 10 , Figure 11 The liquid cooling plate 6 has a liquid cooling channel 61 inside, which can be a circulation channel or a plate-type channel. The liquid cooling plate 6 has a coolant inlet connector 62 and a coolant outlet connector 63 connected to the liquid channel 61. The coolant inlet connector 62 and the coolant outlet connector 63 are respectively connected to external coolant through cooling pipes to achieve cooling of the plate body. In this embodiment, water cooling is used.

[0047] See Figure 6 , Figure 7 The heating element 2 is disposed inside the heat-conducting plate 5. The heating element 2 can be a fitted heating wire, which heats the heat-conducting plate electrically. Other heating elements can also be used to heat the heat-conducting plate, depending on the structure of the heating plate. In this embodiment, an electric heating groove 51 is provided inside the heat-conducting plate 5, and the heating element 2 is disposed inside the electric heating groove 51.

[0048] A temperature sensor 3 is connected to the lower part of the disk 1 to realize real-time detection of the temperature of the disk 1, thereby controlling the temperature of the disk to meet the processing needs of the wafer.

[0049] The vacuum adsorption system 4 includes several vacuum adsorption channels 7 disposed on the heat-conducting plate 5, and the vacuum pumping device includes a vacuum pumping connector 8 connected to the vacuum adsorption channels 7, and an external vacuum pump connected to the vacuum pumping connector 8.

[0050] See Figure 4 , Figure 5 The vacuum adsorption airway 7 includes a vacuum adsorption main airway 71 and a vacuum adsorption connecting airway 72.

[0051] In this embodiment, the vacuum adsorption main air channel 71 adopts a ring-shaped partition design structure. At least two concentric ring-shaped partitioned vacuum adsorption air channels are radially distributed outward from the center of the heat conduction plate 5. Multiple sets of ring-shaped partitioned vacuum adsorption air channels are controlled by the same air extraction connector 8, and the opening and closing adjustment component 9 is used to individually control the opening and closing of each ring-shaped partitioned vacuum adsorption air channel. This achieves a compatible design for the heat conduction plate 5, which means that a ring-shaped partitioned vacuum adsorption main air channel can be set up for different specifications of wafers. When different specifications of wafers need to be adsorbed, only the corresponding specification of the ring-shaped partitioned vacuum adsorption main air channel needs to be opened, and the other ring-shaped partitioned vacuum adsorption main air channels are closed. This saves costs and improves the utilization rate and adsorption effect of the equipment.

[0052] All annular vacuum adsorption main channels are connected by a vacuum adsorption connecting channel 72. An axial channel 73 is provided at the connection point between each annular vacuum adsorption main channel and the vacuum adsorption connecting channel 72. Each axial channel 73 contains a vacuum adsorption channel opening / closing adjustment component 9. The annular partitioned vacuum adsorption channels can be divided according to the wafer size. For example, they can be 4-inch, 6-inch, 8-inch, 12-inch, etc. The external of each vacuum adsorption connecting channel 72 is sealed and locked by an internal hexagonal locking screw 10.

[0053] See Figure 8 , Figure 9 The vacuum adsorption airway opening and closing adjustment component 9 includes an integrally formed adjustment component body 91. An axial air inlet hole 92 and a radial air inlet hole 93 are respectively provided on the adjustment component body 91 along the axial direction and the radial direction. The axial air inlet hole 92 passes through both ends of the axial direction of the adjustment component body 91, and the radial air inlet hole 93 passes through both sides of the radial direction of the adjustment component body 91. The axial air inlet hole 92 and the radial air inlet hole 93 are interconnected.

[0054] Guide sealing surfaces 94 and adjustment structures 95 are respectively provided at both ends of the main body 91 of the adjustment component. In this embodiment, the adjustment structure 95 adopts an internal hexagonal structure.

[0055] The end face of the internal hexagonal structure of the adjusting component body 91 has the same flatness and smoothness as the surface of the heat-conducting plate 5. An external thread 96 is provided on the outer circumference of the adjusting component body 91.

[0056] The depth of the axial air passage 73 is greater than the height of the vacuum adsorption air passage opening and closing adjustment component 9. In use, the radial air inlet 93 on it can be connected or disconnected from the transverse vacuum adsorption connecting air passage 72 by rotating the vacuum adsorption air passage opening and closing adjustment component 9, thereby realizing the opening and closing of the vacuum adsorption main air passage 71.

[0057] A main suction channel 74 is provided inside the heat-conducting plate 5, which connects to the vacuum adsorption connection channel 72. The main suction channel 74 can be arranged axially or radially. In this embodiment, the main suction channel 74 is arranged in a straight line along the axial direction on the lower plate surface of the plate body 1. Specifically, the main suction channel 74 passes through the lower plate surface of the liquid cooling plate 6. The external port 75 of the main suction channel 74 is located on the lower plate surface of the liquid cooling plate 6. The suction connector 8 is located on the external port 75 of the lower plate surface of the liquid cooling plate 6. The suction connector 8 is connected to a vacuum pump through a vacuum pipe.

[0058] In other embodiments, the external port 75 of the main exhaust duct 74 is located on the side circumference of the heat conduction plate 5, the exhaust connector 8 is connected to the external port 75 of the main exhaust duct 74, and the exhaust connector 8 is connected to a vacuum pump through a vacuum pipe.

[0059] See Figure 12 , Figure 13 In this embodiment, a heating pad suitable for wafers up to 8 inches is used as an example. Three annular vacuum adsorption main air channels—a 4-inch vacuum adsorption main air channel 71-1, a 6-inch vacuum adsorption main air channel 71-2, and an 8-inch vacuum adsorption main air channel 71-3—are formed on the heat-conducting pad. These three annular vacuum adsorption main air channels are arranged sequentially from the center outwards on the surface of the heat-conducting pad, without interfering with each other and independently distributed. Each annular vacuum adsorption main air channel has an axial air channel along the same diameter direction. The three axial air channels 73 are connected inside the heat-conducting pad by a transverse vacuum adsorption connecting air channel 72 arranged radially along the heat-conducting pad. A main extraction air channel 74 is coaxially arranged below any one of the axial air channels below the transverse vacuum adsorption connecting air channel. An extraction connector is provided on the main extraction air channel, thereby achieving the purpose of controlling the three annular vacuum adsorption main air channels through a single main extraction air channel.

[0060] See Figure 13 The three axial air passages 73 are all internally threaded holes, and vacuum adsorption air passage opening and closing adjustment components 9 are screwed into the internally threaded holes respectively. By adjusting the up and down position of the vacuum adsorption air passage opening and closing adjustment components, the opening and closing of the axial air passages can be realized, thereby achieving the control purpose of the three annular vacuum adsorption main air passages working separately or simultaneously.

[0061] See Figure 8 , Figure 9The main structure of the vacuum adsorption airway opening and closing adjustment component 9 is similar to an internal hexagon set screw, but it has axial air inlet holes and radial air inlet holes respectively. In actual use, the opening and closing of the corresponding annular vacuum adsorption main airway is achieved by adjusting the relative position of the radial air inlet hole and the transverse vacuum adsorption connecting airway on the heat conduction plate. That is, when the radial air inlet hole of the vacuum adsorption airway opening and closing adjustment component is coaxial with the transverse vacuum adsorption connecting airway of the heat conduction plate, it is in the open state; when the radial air inlet hole and the transverse vacuum adsorption connecting airway of the heat conduction plate are not on the same axis, that is, when they are staggered, it is in the closed state.

[0062] See Figure 14 When the heat transfer plate is used to heat 4-inch wafers, the 6-inch and 8-inch annular vacuum adsorption main air channels 71-2 and 71-3 need to be closed. Therefore, the vacuum adsorption air channel opening and closing adjustment components on the 6-inch and 8-inch annular vacuum adsorption main air channels can be rotated to a position offset from the horizontal vacuum adsorption connection air channel of the heat transfer plate, thereby closing the two annular vacuum adsorption main air channels. When the lower air extraction port is evacuating, only the 4-inch annular vacuum adsorption main air channel 71-1 is working, realizing the adsorption of 4-inch wafers.

[0063] See Figure 18 When the heat transfer plate is used to heat a 6-inch wafer, the 8-inch annular vacuum adsorption main air channel 71-3 needs to be closed, while the 4-inch and 6-inch air channels 71-1 and 71-2 need to be opened. Therefore, the vacuum adsorption air channel opening and closing adjustment component on the 8-inch annular vacuum adsorption main air channel can be rotated to a position offset from the transverse vacuum adsorption connection air channel of the heat transfer plate, thereby closing the 8-inch annular vacuum adsorption main air channel 71-3; the vacuum adsorption air channel opening and closing adjustment components on the 4-inch and 6-inch annular vacuum adsorption main air channels 71-1 and 71-2 can be screwed to a position where the radial air inlet is coaxial with the transverse vacuum adsorption connection air channel of the heat transfer plate, thereby opening the 4-inch and 6-inch annular vacuum adsorption main air channels 71-1 and 71-2. When the lower air extraction port is evacuating, the 4-inch and 6-inch annular vacuum adsorption main air channels 71-1 and 71-2 work simultaneously to achieve the adsorption of the 6-inch wafer.

[0064] See Figure 13 When the heat-conducting plate is used to heat an 8-inch wafer, all three annular vacuum adsorption main air channels—4-inch vacuum adsorption main air channel 71-1, 6-inch vacuum adsorption main air channel 71-2, and 8-inch vacuum adsorption main air channel 71-3—need to be opened. This means screwing the opening and closing adjustment components of the 4-inch, 6-inch, and 8-inch vacuum adsorption air channels to the coaxial position of the radial air inlet and the transverse vacuum adsorption connection air channel of the heat-conducting plate. This opens the three annular vacuum adsorption main air channels. When the lower air extraction port extracts air, the three annular vacuum adsorption main air channels work simultaneously to achieve the adsorption of the 8-inch wafer.

[0065] Example 2: exist Figure 16In the illustrated embodiment, a compatible vacuum adsorption heating plate includes a plate body 1 and a vacuum adsorption system 4. The vacuum adsorption system 4 includes a plurality of vacuum adsorption channels 7 disposed on the plate body 1 and a vacuum pumping device communicating with the plurality of vacuum adsorption channels 7. Vacuum adsorption channel opening and closing adjustment components 9 are provided on the vacuum adsorption channels 7 to realize the opening and closing of the vacuum adsorption channels. A temperature sensor 3 is connected to the plate body 1. The plate body 1 includes a heat-conducting plate 5 and a liquid-cooled plate 6. A heating element 2 is disposed inside the heat-conducting plate 5. The vacuum pumping device includes a vacuum connector 8 disposed on the plate body 1 and an external vacuum pump. The vacuum connector 8 is connected to the vacuum pump through a vacuum pipe.

[0066] The technical solution in this embodiment is basically the same as that in Embodiment 1, except that it is applicable to heating wafers up to 12 inches in diameter.

[0067] Four annular vacuum adsorption main air channels are provided on the heat-conducting plate: a 4-inch vacuum adsorption main air channel 71-1, a 6-inch vacuum adsorption main air channel 71-2, an 8-inch vacuum adsorption main air channel 71-3, and a 12-inch vacuum adsorption main air channel 71-4. These four annular vacuum adsorption main air channels are arranged sequentially from the center outward on the surface of the heat-conducting plate, without interfering with each other and distributed independently. Each annular vacuum adsorption main air channel has an axial air channel along the same diameter direction. The four axial air channels 73 are connected inside the heat-conducting plate by a transverse vacuum adsorption connecting air channel 72 arranged radially along the heat-conducting plate. A main exhaust air channel 74 is arranged coaxially below any one of the axial air channels. An exhaust connector is provided on the main exhaust air channel, thereby achieving the purpose of controlling the four annular vacuum adsorption main air channels through a main exhaust air channel.

[0068] The four axial air passages 73 are all internally threaded holes, and vacuum adsorption air passage opening and closing adjustment components 9 are screwed into the internally threaded holes respectively. By adjusting the up and down position of the vacuum adsorption air passage opening and closing adjustment components, the opening and closing of the axial air passages can be realized, thereby achieving the control purpose of the four annular vacuum adsorption main air passages working separately or simultaneously.

[0069] The vacuum adsorption airway opening and closing adjustment component 9 has axial air inlets and radial air inlets. In actual use, the opening and closing of the corresponding annular vacuum adsorption main airway is achieved by adjusting the relative position of the radial air inlet and the transverse vacuum adsorption connecting airway on the heat conduction plate. That is, when the radial air inlet of the vacuum adsorption airway opening and closing adjustment component is coaxial with the transverse vacuum adsorption connecting airway of the heat conduction plate, it is in the open state; when the radial air inlet and the transverse vacuum adsorption connecting airway of the heat conduction plate are not on the same axis, that is, when they are staggered, it is in the closed state.

[0070] When the heat transfer plate is used to heat a 4-inch wafer, the 6-inch and 8-inch annular vacuum adsorption main air channels 71-2 and 71-3 need to be closed. Therefore, the vacuum adsorption air channel opening and closing adjustment components on the 6-inch, 8-inch, and 12-inch annular vacuum adsorption main air channels can be rotated to a position offset from the horizontal vacuum adsorption connection air channel of the heat transfer plate, thereby closing the two annular vacuum adsorption main air channels. When the lower air extraction port is evacuating, only the 4-inch annular vacuum adsorption main air channel 71-1 is working, realizing the adsorption of the 4-inch wafer.

[0071] When the heat transfer plate is used to heat a 6-inch wafer, the 8-inch and 12-inch annular vacuum adsorption main air channels 71-3 and 71-4 need to be closed, while the 4-inch and 6-inch air channels 71-1 and 71-2 need to be opened. Therefore, the vacuum adsorption air channel opening and closing adjustment piece on the 8-inch annular vacuum adsorption main air channel can be rotated to a position offset from the transverse vacuum adsorption connection air channel of the heat transfer plate, thereby closing the 8-inch and 12-inch annular vacuum adsorption main air channels 71-3 and 71-4; the vacuum adsorption air channel opening and closing adjustment piece on the 4-inch and 6-inch annular vacuum adsorption main air channels 71-1 and 71-2 can be screwed to a position where the radial air inlet is coaxial with the transverse vacuum adsorption connection air channel of the heat transfer plate, thereby opening the 4-inch and 6-inch annular vacuum adsorption main air channels 71-1 and 71-2. When the lower air extraction port is evacuating, the 4-inch and 6-inch annular vacuum adsorption main air channels 71-1 and 71-2 work simultaneously to achieve the adsorption of the 6-inch wafer.

[0072] When the heat transfer plate is used to heat an 8-inch wafer, the 12-inch annular vacuum adsorption main air channel 71-4 needs to be closed, and all three annular vacuum adsorption main air channels—the 4-inch 71-1, the 6-inch 71-2, and the 8-inch 71-3—need to be opened. This means screwing the opening and closing adjustment components of the 4-inch, 6-inch, and 8-inch vacuum adsorption air channels to the coaxial position between the radial air inlet and the transverse vacuum adsorption connection air channel of the heat transfer plate. This opens the three annular vacuum adsorption main air channels. When the lower air extraction port extracts air, the three annular vacuum adsorption main air channels work simultaneously to achieve the adsorption of the 8-inch wafer.

[0073] When the heat transfer plate is used to heat a 12-inch wafer, all four annular vacuum adsorption main air channels need to be opened: the 4-inch vacuum adsorption main air channel 71-1, the 6-inch vacuum adsorption main air channel 71-2, the 8-inch vacuum adsorption main air channel 71-3, and the 12-inch annular vacuum adsorption main air channel 71-4. This means screwing the opening and closing adjustment parts of the 4-inch, 6-inch, 8-inch, and 12-inch vacuum adsorption air channels to the position where the radial air inlet is coaxial with the horizontal vacuum adsorption connection air channel of the heat transfer plate. This opens the four annular vacuum adsorption main air channels. When the lower air extraction port extracts air, the four annular vacuum adsorption main air channels work simultaneously to achieve the adsorption of the 12-inch wafer.

[0074] Example 3: exist Figure 17 , Figure 18In the embodiments shown, the technical solution is basically the same as that of Embodiment 1 or Embodiment 2, except that: the compatible vacuum adsorption hot plate is provided with multiple vacuum adsorption connecting air channels 72, each vacuum adsorption connecting air channel 72 is provided with an axial air channel 73 corresponding to the main vacuum adsorption air channel, and each axial air channel 73 is provided with a vacuum adsorption air channel opening and closing adjustment component 9. The multiple vacuum adsorption connecting air channels 72 are connected to the main air channel 74 through branch extraction air channels 76.

[0075] Specifically, the heat-conducting plate has multiple annular vacuum adsorption main air channels, including 4-inch vacuum adsorption main air channel 71-1, 6-inch vacuum adsorption main air channel 71-2, 8-inch vacuum adsorption main air channel 71-3, 12-inch vacuum adsorption main air channel 71-4, etc. These multiple annular vacuum adsorption main air channels are arranged sequentially from the center outward on the surface of the heat-conducting plate, without interfering with each other and distributed independently. Each annular vacuum adsorption main air channel has at least two axial air channels, and each axial air channel is equipped with a vacuum adsorption air channel opening and closing adjustment component 9. Below each of the multiple annular vacuum adsorption main air channels arranged along the same radial direction, there is a transverse vacuum adsorption connecting air channel 72 that can connect the multiple annular vacuum adsorption main air channels.

[0076] Each transverse vacuum adsorption connecting air channel 72 is provided with a branch air extraction channel 76 that connects to the main air extraction channel 74. The air extraction connector 8 is connected to the external port 75 of the main air extraction channel 74, thereby achieving the purpose of controlling multiple annular vacuum adsorption main air channels through one air extraction connector 8, i.e., one set of vacuum adsorption system 4. This not only ensures the adsorption effect during the adsorption process, but also simplifies the design of the disk structure.

[0077] During use, the vacuum adsorption channel opening and closing adjustment component 9 can be selected to open according to the wafer adsorption needs, thereby meeting the adsorption of wafers of different specifications and adjusting the adsorption effect. For example, when adsorbing large-sized wafers, two or more transverse vacuum adsorption connecting channels 72 can be opened at the same time, and the vacuum adsorption channel opening and closing adjustment component 9 on the corresponding size vacuum adsorption main channel can be opened simultaneously. Vacuum can be drawn from different positions on the vacuum adsorption main channel 71 at the same time to adsorb the wafer, which can effectively ensure the adsorption effect.

[0078] All air passages are designed to avoid heating elements and cooling channels, thus ensuring that the heating and cooling functions of the disc are not affected by the air passages. This achieves both good adsorption effect and meets the design requirements for heating and cooling functions.

[0079] The compatible vacuum adsorption heating plate in the above embodiments includes a plate body, a heating element, a temperature sensor, and a vacuum adsorption system. Its core technical solution lies in the multiple independently controllable annular partitioned vacuum adsorption main air channels within the plate body. Annular partition design: The vacuum adsorption main air channels are not a single, unified network, but rather composed of at least two concentric annular regions of vacuum adsorption main air channels radiating outwards from the center of the plate body. For example, they can be divided into 4-inch, 6-inch, 8-inch, 12-inch, etc., according to common wafer sizes on the market. Independent controllability: Each annular partitioned air channel can be individually closed and opened, allowing for vacuuming operations through only one or a very small number of pipes, achieving individual vacuuming for each zone; Specification matching: Different wafer sizes correspond to different annular partition combinations. Adsorption of small-sized wafers (e.g., 6-inch): Only the 4-inch and 6-inch air channels are opened, while the 8-inch and 12-inch air channels are closed. In this way, the adsorption force acts entirely within the coverage area of ​​the small-sized wafer, avoiding vacuum leakage and ensuring firm and uniform adsorption. Adsorption of large-size wafers (such as 12-inch wafers): Simultaneously open the 4-inch, 6-inch, 8-inch, and 12-inch gas channels to provide comprehensive and uniform adsorption force to the entire back side of the wafer.

[0080] This compatible vacuum adsorption hot plate boasts exceptional compatibility: a single set can meet the processing needs of wafers of various sizes, significantly reducing equipment changeover and setup time, and enhancing production line flexibility and efficiency. Superior adsorption performance: Zoned control ensures that adsorption force is uniformly applied to the effective wafer area regardless of size, avoiding insufficient edge adsorption or vacuum leakage, thereby improving process stability and product yield. Energy efficient: When adsorbing small wafers, only necessary zones are activated, avoiding ineffective vacuum suction, reducing the load and energy consumption of the vacuum system, and helping to maintain stable pressure in the process chamber. Rational structure and easy implementation: This solution can be implemented through precision machining during the hot plate manufacturing stage, without requiring overly complex structural modifications.

Claims

1. A compatible vacuum adsorption heating plate, characterized in that: It includes a disk body (1) and a vacuum adsorption system (4). The vacuum adsorption system (4) includes a plurality of vacuum adsorption channels (7) disposed on the disk body (1) and a vacuum pumping device connected to the plurality of vacuum adsorption channels (7). A vacuum adsorption channel opening and closing adjustment component (9) is provided on the vacuum adsorption channels (7) to realize the opening and closing of the vacuum adsorption channels.

2. The compatible vacuum adsorption heating plate according to claim 1, characterized in that: The vacuum adsorption channel (7) includes several annular vacuum adsorption main channels (71) and at least one vacuum adsorption connecting channel (72).

3. The compatible vacuum adsorption heating plate according to claim 2, characterized in that: An axial airway (73) is provided between the annular vacuum adsorption main airway (71) and the vacuum adsorption connecting airway (72), and the vacuum adsorption airway opening and closing adjustment component (9) is adjusted and set in the axial airway (73).

4. The compatible vacuum adsorption heating plate according to claim 2, characterized in that: Several annular vacuum adsorption main air channels (71) are concentrically arranged on the surface of the disk body with the center of the disk body as the center and outward from the center of the disk body. The vacuum adsorption connecting air channel (72) is arranged radially inside the disk body and connected to the vacuum pumping device through a main air extraction channel (74).

5. The compatible vacuum adsorption heating plate according to any one of claims 1 to 4, characterized in that: The vacuum adsorption air passage opening and closing adjustment component (9) is provided with an axial air inlet (92) and a radial air inlet (93) along the axial direction and radial direction, respectively.

6. The compatible vacuum adsorption heating plate according to claim 5, characterized in that: The vacuum adsorption air passage opening and closing adjustment component (9) includes an integrally formed adjustment component body (91), the axial air inlet (92) passes through both ends of the axial direction of the adjustment component body (91), the radial air inlet (93) passes through both sides of the radial direction of the adjustment component body (91), and the axial air inlet (92) and the radial air inlet (93) are interconnected.

7. The compatible vacuum adsorption heating plate according to claim 6, characterized in that: The adjusting body (91) is provided with a guide sealing surface (94) and an adjusting structure (95) at both ends of the axial direction, and an external thread (96) is provided on the outer circumference of the adjusting body (91).

8. The compatible vacuum adsorption heating plate according to any one of claims 1 to 4, characterized in that: The vacuum device includes a vacuum connector (8) installed on the disc body (1) and an external vacuum pump. The vacuum connector (8) is connected to the vacuum pump through a vacuum pipe.

9. The compatible vacuum adsorption heating plate according to any one of claims 1 to 4, characterized in that: The plate body (1) includes a heat-conducting plate (5) and a liquid-cooled plate (6) fixedly connected to the heat-conducting plate. A temperature sensor (3) is connected to the plate body (1).

10. The compatible vacuum adsorption heating plate according to claim 9, characterized in that: The heat-conducting plate (5) is provided with a heating element (2), the liquid cooling plate (6) is provided with a liquid cooling channel (61), and the liquid cooling plate (6) is provided with a coolant inlet connector (62) and a coolant outlet connector (63) that connect to the liquid cooling channel (61).

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