Ultrasound imaging apparatus

Abstract

Disclosed is an ultrasonic imaging apparatus, comprising: a substrate; a plurality of signal lines; a plurality of electrostatic protection circuits; at least part of the signal lines are electrically connected with the electrostatic protection circuit; the electrostatic protection circuit comprises a one-way electrostatic conduction unit and an electrostatic discharge end. One end of the one-way static conduction unit is electrically connected with the static discharge end, and the other end of the one-way static conduction unit is electrically connected with the signal line.

Description

Ultrasonic imaging device Technical Field

[0001] This disclosure relates to the field of ultrasound imaging technology, and more particularly to an ultrasound imaging device. Background Technology

[0002] Ultrasound imaging is an important non-destructive testing method in medicine. With technological advancements, ultrasound imaging is evolving towards faster, more dynamic, clearer, and three-dimensional imaging. High definition and high resolution are goals that researchers have consistently pursued, as they facilitate earlier disease detection and timely treatment.

[0003] Ultrasonic imaging devices employing large-area two-dimensional detector arrays can significantly increase the amount of information detected. Two-dimensional imaging can improve detection depth and resolution. However, during the fabrication of such devices, static electricity buildup can damage the components, affecting the yield rate and increasing manufacturing costs.

[0004] Summary of the Invention

[0005] This disclosure provides an ultrasound imaging device, which includes:

[0006] The substrate includes a functional region and a peripheral region surrounding the functional region;

[0007] Multiple signal lines are located on one side of the substrate; at least some of the signal lines include portions located in the peripheral region.

[0008] Multiple electrostatic discharge (ESD) protection circuits and multiple signal lines are located on the same side of a substrate; the orthographic projection of the multiple ESD protection circuits onto the substrate is located in the peripheral region; at least a portion of the multiple signal lines are electrically connected to the ESD protection circuits; the ESD protection circuits include: a unidirectional ESD conduction unit and an ESD discharge terminal; one end of the unidirectional ESD conduction unit is electrically connected to the ESD discharge terminal, and the other end of the unidirectional ESD conduction unit is electrically connected to the signal lines.

[0009] In some embodiments, the electrostatic discharge (ESD) protection circuit includes a plurality of unidirectional ESD conduction units and two ESD discharge terminals; the two ESD discharge terminals are a first ESD discharge terminal and a second ESD discharge terminal, respectively; the plurality of unidirectional ESD conduction units include: at least one first unidirectional ESD conduction unit and at least one second unidirectional ESD conduction unit; at least one first unidirectional ESD conduction unit is electrically connected between the first ESD discharge terminal and the signal line, and at least one second unidirectional ESD conduction unit is electrically connected between the second ESD discharge terminal and the signal line; at least one first unidirectional ESD conduction unit is configured to conduct when there is positive charge accumulation on the signal line and discharge the positive charge through the first ESD discharge terminal; at least one second unidirectional ESD conduction unit is configured to conduct when there is negative charge accumulation on the signal line and discharge the negative charge through the second ESD discharge terminal.

[0010] In some embodiments, the electrostatic discharge protection circuit includes a plurality of unidirectional electrostatic conduction units connected in series between a first electrostatic discharge terminal and a second electrostatic discharge terminal.

[0011] In some embodiments, a plurality of unidirectional electrostatic conduction units are arranged along an extension direction parallel to the substrate surface and perpendicular to the signal line, and at least one first unidirectional electrostatic conduction unit and at least one second unidirectional electrostatic conduction unit are respectively located on both sides of the signal line in the extension direction parallel to the substrate surface and perpendicular to the signal line.

[0012] In some embodiments, the unidirectional electrostatic conduction unit includes one unidirectional electrostatic conduction subunit or multiple unidirectional electrostatic conduction subunits connected in parallel.

[0013] In some embodiments, a plurality of parallel unidirectional electrostatic conduction subunits are arranged sequentially along the extension direction of the signal line.

[0014] In some embodiments, the unidirectional electrostatic conduction subunit includes a first pole and a second pole, the signal line is electrically connected to the first pole of the unidirectional electrostatic conduction subunit in the first unidirectional electrostatic conduction unit, and the first electrostatic discharge terminal is electrically connected to the second pole of the unidirectional electrostatic conduction subunit in the first unidirectional electrostatic conduction unit.

[0015] In some embodiments, the unidirectional electrostatic conduction subunit includes a first pole and a second pole, the signal line is electrically connected to the second pole of the unidirectional electrostatic conduction subunit in the second unidirectional electrostatic conduction unit, and the second electrostatic discharge terminal is electrically connected to the first pole of the unidirectional electrostatic conduction subunit in the second unidirectional electrostatic conduction unit.

[0016] In some embodiments, the first poles of a plurality of parallel unidirectional electrostatic conduction subunits are arranged sequentially along the extension direction of the signal line, and the second poles of a plurality of parallel unidirectional electrostatic conduction subunits are arranged sequentially along the extension direction of the signal line.

[0017] In at least some of the unidirectional electrostatic conduction units, the first poles of multiple parallel unidirectional electrostatic conduction subunits are integrally connected, and / or, the second poles of multiple parallel unidirectional electrostatic conduction subunits are integrally connected.

[0018] In some embodiments, the unidirectional electrostatic conduction subunit further includes a third pole electrically connected to the first pole or the second pole.

[0019] In some embodiments, the third poles of multiple parallel unidirectional electrostatic conduction subunits are arranged sequentially and integrally connected along the extension direction of the signal line.

[0020] In some embodiments, the unidirectional electrostatic conduction subunit is a switching transistor;

[0021] The switching transistor further includes: a first active layer; a first electrode and a second electrode located on the side of the first active layer away from the substrate; the first active layer includes: a first doped region, a channel region, and a second doped region; the first electrode is electrically connected to the first doped region, and the second electrode is electrically connected to the second doped region;

[0022] The unidirectional electrostatic conduction subunit also includes a third pole, which is located between the first pole and the second pole and the first active layer.

[0023] In some embodiments, the first doped region, the channel region, and the second doped region in the first active layer are arranged sequentially in the direction from the second unidirectional electrostatic conduction unit to the first unidirectional electrostatic conduction unit, and the first electrode and the second electrode are arranged in the direction from the second unidirectional electrostatic conduction unit to the first unidirectional electrostatic conduction unit.

[0024] In some embodiments, the first electrode and the second electrode are disposed in the same layer on the side of the first active layer away from the substrate.

[0025] Multiple unidirectional electrostatic conduction units are connected in series between the signal line and the first electrostatic discharge terminal and / or between the signal line and the second electrostatic discharge terminal; in any two unidirectional electrostatic conduction units connected in series between the signal line and the first electrostatic discharge terminal and / or between the signal line and the second electrostatic discharge terminal, the second doped region of one unidirectional electrostatic conduction unit is adjacent to the first doped region of the other unidirectional electrostatic conduction unit, and the second electrode of one unidirectional electrostatic conduction unit is integrally connected to the first electrode of the other unidirectional electrostatic conduction unit.

[0026] In some embodiments, the first electrode, the second electrode, and the signal line are arranged on the same layer;

[0027] The signal line and its electrically connected first and second poles are connected as a single unit.

[0028] In some embodiments, the switching transistor is a PIN diode; or...

[0029] The switching transistor is a thin-film transistor; one of the first and second electrodes is the first drain, and the other of the first and second electrodes is the first source; the thin-film transistor also includes a third electrode electrically connected to the first source.

[0030] In some embodiments, the electrostatic discharge protection circuit includes N-type thin-film transistors; the first electrode is the first source, and the second electrode is the first drain; or...

[0031] The electrostatic discharge protection circuit includes P-type thin-film transistors; the first electrode is the first drain and the second electrode is the first source.

[0032] In some embodiments, the ultrasound imaging device further includes: a first electrostatic discharge signal line electrically connected to a first electrostatic discharge terminal, and a second electrostatic discharge signal line electrically connected to a second electrostatic discharge terminal;

[0033] At least some of the electrostatic discharge protection circuits have their first electrostatic discharge terminals electrically connected to the same first electrostatic discharge signal line, and at least some of the electrostatic discharge protection circuits have their second electrostatic discharge terminals electrically connected to the same second electrostatic discharge signal line.

[0034] In some embodiments, the extending directions of the first electrostatic discharge signal line and the second electrostatic discharge signal line intersect with the extending direction of the signal line.

[0035] The first electrostatic discharge signal line and the second electrostatic discharge signal line are located on different layers from the signal line;

[0036] The orthographic projection of the unidirectional electrostatic conduction unit onto the substrate is located between the orthographic projections of the first electrostatic discharge signal line onto the substrate and the orthographic projections of the second electrostatic discharge signal line onto the substrate.

[0037] In some embodiments, the peripheral area includes: a binding area located on one side of the functional area in a first direction;

[0038] In some embodiments, the bonding area is located on one side of the functional area in a first direction; in the area between the bonding area and the functional area, multiple signal lines are arranged along a second direction, which intersects the first direction;

[0039] The surrounding area also includes: a first sub-area located on the side of the binding area facing the functional area in the first direction, and a second sub-area located on the side of the first sub-area facing the functional area in the first direction;

[0040] A portion of the multiple signal lines includes: a first portion extending along a first direction; the orthographic projection of the first portion onto the substrate falls into a first sub-region and a bonding region, and the end of the first portion away from the functional region is electrically connected to a third bonding electrode;

[0041] A portion of the multiple signal lines includes: a second portion, the orthographic projection of which falls into a second sub-region on the substrate, and at least a portion of the second portion of the signal lines extending along a third direction; the third direction intersects both the first direction and the second direction; a portion of the multiple signal lines includes: a third portion located on the side of the functional area away from the bonding area and extending along the first direction;

[0042] At least one of the first part, the second part, and the third part is electrically connected to the electrostatic protection circuit. Attached Figure Description

[0043] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0044] Figure 1 is a schematic diagram of the structure of an ultrasound imaging device provided in an embodiment of this disclosure;

[0045] Figure 2 is a schematic diagram of an electrostatic protection circuit provided in an embodiment of this disclosure;

[0046] Figure 3 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0047] Figure 4 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0048] Figure 5 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0049] Figure 6 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0050] Figure 7 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0051] Figure 8 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0052] Figure 9 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0053] Figure 10 is a cross-sectional view of AA' in Figure 9 provided by an embodiment of this disclosure;

[0054] Figure 11 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0055] Figure 12 is a cross-sectional view of BB' in Figure 11 provided by an embodiment of this disclosure;

[0056] Figure 13 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0057] Figure 14 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0058] Figure 15 is a cross-sectional view of EE' in Figure 14 provided by an embodiment of this disclosure;

[0059] Figure 16 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0060] Figure 17 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0061] Figure 18 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0062] Figure 19 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0063] Figure 20 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0064] Figure 21 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0065] Figure 22 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0066] Figure 23 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0067] Figure 24 is a schematic diagram of another electrostatic protection circuit provided in an embodiment of this disclosure;

[0068] Figure 25 is a schematic diagram of another ultrasound imaging device provided in an embodiment of this disclosure;

[0069] Figure 26 is a schematic diagram of the structure of another ultrasound imaging device provided in an embodiment of this disclosure;

[0070] Figure 27 is a schematic diagram of another ultrasonic imaging device provided in an embodiment of this disclosure;

[0071] Figure 28 is a schematic diagram of another ultrasonic imaging device provided in an embodiment of this disclosure;

[0072] Figure 29 is a schematic diagram of another ultrasonic imaging device provided in an embodiment of this disclosure;

[0073] Figure 30 is an equivalent circuit diagram of a sensing unit provided in an embodiment of this disclosure;

[0074] Figure 31 is a schematic diagram of another ultrasonic imaging device provided in an embodiment of this disclosure;

[0075] Figure 32 is a schematic diagram of the structure of another ultrasound imaging device provided in an embodiment of this disclosure;

[0076] Figure 33 is a schematic diagram of the structure of another ultrasound imaging device provided in the embodiments of this disclosure. Detailed Implementation

[0077] To make the objectives, technical solutions, and advantages of the embodiments of this disclosure clearer, the technical solutions of the embodiments of this disclosure will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this disclosure. Furthermore, the embodiments and features in the embodiments of this disclosure can be combined with each other without conflict. All other embodiments obtained by those skilled in the art based on the described embodiments of this disclosure without creative effort are within the scope of protection of this disclosure.

[0078] Unless otherwise defined, the technical or scientific terms used in this disclosure shall have the ordinary meaning understood by one of ordinary skill in the art to which this disclosure pertains. The terms “first,” “second,” and similar terms used in this disclosure do not indicate any order, quantity, or importance, but are merely used to distinguish different components. Terms such as “comprising” or “including” mean that an element or object preceding the word encompasses the elements or objects listed following the word and their equivalents, without excluding other elements or objects. Terms such as “connected” or “linked” are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect.

[0079] It should be noted that the dimensions and shapes of the figures in the accompanying drawings do not reflect actual proportions and are intended only to illustrate the content of this disclosure. Furthermore, the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout.

[0080] This disclosure provides an ultrasound imaging device, as shown in FIG1, comprising:

[0081] The substrate 1 includes a functional region 101 and a peripheral region 102 surrounding the functional region 101;

[0082] Multiple signal lines 2 are located on one side of the substrate 1; at least some of the signal lines 2 include portions located in the peripheral region 102;

[0083] Multiple electrostatic discharge (ESD) protection circuits 3 are located on the same side of the substrate 1 as multiple signal lines 2; the orthographic projection of the multiple ESD protection circuits 3 onto the substrate 1 is located in the peripheral region 102; at least a portion of the multiple signal lines 2 are electrically connected to the ESD protection circuits 3; the ESD protection circuits 3 include: a unidirectional electrostatic conduction unit 301 and an electrostatic discharge terminal 304; one end of the unidirectional electrostatic conduction unit 301 is electrically connected to the electrostatic discharge terminal 304, and the other end of the unidirectional electrostatic conduction unit 301 is electrically connected to the signal lines 2.

[0084] The ultrasound imaging device provided in this embodiment includes an electrostatic discharge (ESD) protection circuit electrically connected to the signal line. The ESD protection circuit includes a classical discharge terminal and a unidirectional electrostatic conduction unit electrically connecting the signal line and the discharge terminal. Even if a large amount of static electricity is generated on the signal line during the fabrication of the ultrasound imaging device, when the absolute value of the voltage formed by the accumulated static charge on the signal line is large, the charge can be discharged through the discharge terminal of the ESD protection circuit. Thus, the ESD protection circuit can effectively discharge the voltage formed by the large absolute value of the accumulated static charge on the signal line, which can prevent the accumulation of static electricity on the signal line from causing excessive electrostatic current and burning out the signal line, thereby improving the yield of the ultrasound imaging device.

[0085] In some embodiments, as shown in FIG1, the electrostatic discharge protection circuit 3 includes a plurality of unidirectional electrostatic conduction units 301 and two electrostatic discharge terminals 304; the two electrostatic discharge terminals 304 are a first electrostatic discharge terminal 3041 and a second electrostatic discharge terminal 3042, respectively; the plurality of unidirectional electrostatic conduction units 301 include: at least one first unidirectional electrostatic conduction unit 301-1 and at least one second unidirectional electrostatic conduction unit 301-2; at least one first unidirectional electrostatic conduction unit 301-1 is electrically connected between the first electrostatic discharge terminal 3041 and the signal line 2, and at least one second unidirectional electrostatic conduction unit 301-2 is electrically connected between the second electrostatic discharge terminal 3042 and the signal line 2; at least one first unidirectional electrostatic conduction unit 301-1 is configured to conduct when there is positive charge accumulation on the signal line 2 and conduct the positive charge through the first electrostatic discharge terminal 3041; at least one second unidirectional electrostatic conduction unit 301-2 is configured to conduct when there is negative charge accumulation on the signal line 2 and conduct the negative charge through the second electrostatic discharge terminal 3042.

[0086] The ultrasound imaging device provided in this embodiment includes an electrostatic discharge (ESD) protection circuit electrically connected to the signal line. Even if a large amount of static electricity is generated on the signal line during the fabrication of the ultrasound imaging device, when the absolute value of the voltage formed by the accumulated static charge on the signal line is large, the positive charge can be discharged through the first ESD discharge terminal of the ESD protection circuit, and the negative charge can be discharged through the second ESD discharge terminal of the ESD protection circuit. Thus, the ESD protection circuit can effectively discharge the voltage formed by the large absolute value of the accumulated static charge on the signal line, which can prevent the accumulation of static electricity on the signal line from causing excessive electrostatic current and burning out the signal line, thereby improving the yield of the ultrasound imaging device.

[0087] In some embodiments, the substrate can be a rigid substrate, such as glass; or it can be a flexible substrate, such as polyimide (PI), polyethylene terephthalate (PET), etc., without limitation.

[0088] In some embodiments, as shown in FIG1, a unidirectional electrostatic conduction unit 301 is electrically connected between the signal line 2 and at least one electrostatic discharge terminal 304. FIG1 illustrates an example where a unidirectional electrostatic conduction unit 301 is electrically connected between the signal line 2 and the first electrostatic discharge terminal 3041, and a unidirectional electrostatic conduction unit 301 is electrically connected between the signal line 2 and the second electrostatic discharge terminal 3042.

[0089] Alternatively, as shown in Figures 2 to 7, the signal line 2 can be electrically connected to at least one electrostatic discharge terminal 304 via multiple unidirectional electrostatic conduction units 301. Figures 2 to 7 illustrate this with an example where the signal line 2 is electrically connected to the first electrostatic discharge terminal 3041 via multiple unidirectional electrostatic conduction units 301, and the signal line 2 is electrically connected to the second electrostatic discharge terminal 3042 via multiple unidirectional electrostatic conduction units 301.

[0090] When multiple unidirectional electrostatic conduction units are electrically connected between the signal line and the electrostatic discharge terminal, in some embodiments, as shown in Figures 2 to 7, the multiple unidirectional electrostatic conduction units 301 electrically connected between the signal line 2 and the electrostatic discharge terminal 304 are connected in series.

[0091] In some embodiments, as shown in Figures 2 to 7, the electrostatic discharge protection circuit 3 includes a plurality of unidirectional electrostatic conduction units 301 connected in series between the first electrostatic discharge terminal 3041 and the second electrostatic discharge terminal 3042.

[0092] In some embodiments, as shown in Figures 8, 9, 11, 13, and 14, a plurality of unidirectional electrostatic conduction units 301 are arranged along a direction parallel to the surface of the substrate (not shown) and perpendicular to the extension direction of the signal line 2, and at least one first unidirectional electrostatic conduction unit 301-1 and at least one second unidirectional electrostatic conduction unit 301-2 are located on both sides of the signal line 2, respectively, in a direction parallel to the surface of the substrate and perpendicular to the extension direction of the signal line 2.

[0093] It should be noted that, in specific implementation, as shown in Figure 1, at least some signal lines 2 do not always extend in a straight line in a certain direction; that is, signal lines 2 can be composed of multiple straight line segments with not exactly the same extension direction. In the electrostatic discharge protection circuit 3, at least one first unidirectional electrostatic conduction unit 301-1 and at least one second unidirectional electrostatic conduction unit 301-2 are respectively located on both sides of the extension direction perpendicular to one of the straight line segments. The arrangement of multiple unidirectional electrostatic conduction units 301 along the extension direction perpendicular to the signal line 2 means that multiple unidirectional electrostatic conduction units 301 are arranged along the extension direction perpendicular to the straight line segment of the signal line 2. If the extension direction of the straight line segment of the signal line 2 electrically connected to the electrostatic discharge protection circuit 3 is defined as vertical and the direction perpendicular to the straight line segment is horizontal, then in the electrostatic discharge protection circuit 3, multiple series-connected unidirectional electrostatic conduction units 301 are arranged horizontally, and at least one first unidirectional electrostatic conduction unit 301-1, the straight line segment of the signal line 2, and at least one second unidirectional electrostatic conduction unit 301-2 are arranged horizontally.

[0094] In the ultrasonic imaging device provided in this embodiment, multiple unidirectional electrostatic conduction units connected in series in the electrostatic protection circuit are arranged along the extension direction of the straight line segment perpendicular to the signal line electrically connected to it, and the first unidirectional electrostatic conduction unit and the second unidirectional electrostatic conduction unit are respectively located on both sides of the signal line in the extension direction perpendicular to the signal line. That is, the electrostatic protection circuit is set in the area between the signal lines, which can save wiring space.

[0095] In some embodiments, as shown in Figures 2 to 9, 11, 13 and 14, the unidirectional electrostatic conduction unit 301 includes one unidirectional electrostatic conduction subunit 3011 or multiple unidirectional electrostatic conduction subunits 3011 connected in parallel.

[0096] In some embodiments, in the electrostatic discharge protection circuit, as shown in Figures 2, 4, 6, 8, and 13, each of the multiple unidirectional electrostatic conduction units 301 connected in series includes one unidirectional electrostatic conduction subunit 3011; or, as shown in Figures 3, 5, 7, 9, 11, and 14, each of the multiple unidirectional electrostatic conduction units 301 connected in series includes multiple parallel unidirectional electrostatic conduction subunits 3011, and each unidirectional electrostatic conduction unit 301 includes the same number of parallel unidirectional electrostatic conduction subunits 3011.

[0097] In some embodiments, as shown in Figures 2-9, 11, 13, and 14, the electrostatic discharge (ESD) protection circuit includes two first unidirectional ESD conduction units 301-1 and two second unidirectional ESD conduction units 301-2. In specific implementations, the ESD protection circuit may also include more first unidirectional ESD conduction units 301-1 and more second unidirectional ESD conduction units 301-2.

[0098] In some embodiments, as shown in Figures 2 to 9, 11, 13, and 14, the electrostatic discharge protection circuit includes the same number of first unidirectional electrostatic conduction units 301-1 and the same number of second unidirectional electrostatic conduction units 301-2.

[0099] Alternatively, in some embodiments, the number of first unidirectional electrostatic conduction units and the number of second unidirectional electrostatic conduction units included in the electrostatic protection circuit may be different.

[0100] In some embodiments, as shown in Figures 9, 11, and 14, a plurality of parallel unidirectional electrostatic conduction subunits 3011 are arranged sequentially along the extension direction of the signal line 2.

[0101] In some embodiments, as shown in Figures 8 to 15, the unidirectional electrostatic conduction subunit 3011 includes a first electrode 30112 and a second electrode 30113.

[0102] In some embodiments, as shown in Figures 8 to 15, in any two unidirectional electrostatic conduction units 301 connected in series, the first pole 30112 of the unidirectional electrostatic conduction subunit 3011 in one unidirectional electrostatic conduction unit 3011 is electrically connected to the second pole 30113 of the unidirectional electrostatic conduction subunit 3011 in the other unidirectional electrostatic conduction unit 3011.

[0103] In some embodiments, as shown in Figures 8 to 15, signal line 2 is electrically connected to the first pole 30112 of the unidirectional electrostatic conduction subunit 3011 in the first unidirectional electrostatic conduction unit 301-1, and the first electrostatic discharge terminal 3041 is electrically connected to the second pole 30113 of the unidirectional electrostatic conduction subunit 3011 in the first unidirectional electrostatic conduction unit 301-1.

[0104] In some embodiments, as shown in Figures 8 to 15, signal line 2 is electrically connected to the second pole 30113 of the unidirectional electrostatic conduction subunit 3011 in the second unidirectional electrostatic conduction unit 301-2, and the second electrostatic discharge terminal 3042 is electrically connected to the first pole 30112 of the unidirectional electrostatic conduction subunit 3011 in the second unidirectional electrostatic conduction unit 301-2.

[0105] In some embodiments, as shown in Figures 9, 11, and 14, when the unidirectional electrostatic conduction unit 301 includes a plurality of parallel unidirectional electrostatic conduction subunits 3011, the first poles 30112 of the plurality of parallel unidirectional electrostatic conduction subunits 3011 are arranged sequentially along the extension direction of the signal line 2, and the second poles 30113 of the plurality of parallel unidirectional electrostatic conduction subunits 3011 are arranged sequentially along the extension direction of the signal line 2.

[0106] In some embodiments, as shown in Figures 9, 11, and 14, when the unidirectional electrostatic conduction unit 301 includes a plurality of parallel unidirectional electrostatic conduction subunits 3011, in at least some of the unidirectional electrostatic conduction units 301, the first poles 30112 of the plurality of parallel unidirectional electrostatic conduction subunits 3011 are integrally connected, and / or, the second poles 30113 of the plurality of parallel unidirectional electrostatic conduction subunits 3011 are integrally connected.

[0107] It should be noted that in Figures 9 and 11, in each unidirectional electrostatic conduction unit 301, the first poles 30112 of multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected, and the second poles 30113 of multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected. In Figure 14, in the first unidirectional electrostatic conduction unit 301-1 electrically connected to the first electrostatic release terminal 3041, the second poles 30113 of multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected; in the first unidirectional electrostatic conduction unit 301-1 electrically connected to the signal line 2, the first poles 30112 of multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected; in the second unidirectional electrostatic conduction unit 301-2 electrically connected to the signal line 2, the second poles 30113 of multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected.

[0108] In some embodiments, as shown in Figures 11, 13, and 14, the unidirectional electrostatic conduction subunit 3011 further includes a third pole 30114 electrically connected to the first pole 30112 or the second pole 30113.

[0109] In some embodiments, as shown in Figures 11 and 14, the third poles 30114 of a plurality of parallel unidirectional electrostatic conduction subunits 3011 are arranged sequentially and integrally connected along the extension direction of the signal line 2.

[0110] In this embodiment, the third poles of multiple parallel unidirectional electrostatic conduction subunits are integrally connected, which reduces the difficulty of fabricating and designing the third poles. The integrally connected third pole is electrically connected to the first or second pole, thus enabling parallel connection between the unidirectional electrostatic conduction subunits. Furthermore, since in at least some of the unidirectional electrostatic conduction units, the first poles of multiple parallel unidirectional electrostatic conduction subunits are integrally connected, and / or the second poles of multiple parallel unidirectional electrostatic conduction subunits are integrally connected, and the integrally connected third pole is electrically connected to the first or second pole at one end in its extension direction, the first light-shielding pattern of each unidirectional electrostatic conduction subunit can be electrically connected to the first or second pole.

[0111] In some embodiments, as shown in Figures 2 to 15, the unidirectional electrostatic conduction subunit 3011 is a switching transistor 3011-1;

[0112] As shown in Figures 8 to 15, the switching transistor 3011-1 further includes: a first active layer 30111; a first electrode 30112 and a second electrode 30113 located on the side of the first active layer 30111 away from the substrate; the first active layer 30111 includes: a first doped region P1, a channel region P3, and a second doped region P2; the first electrode 30112 is electrically connected to the first doped region P1, and the second electrode 30113 is electrically connected to the second doped region P2;

[0113] Signal line 2 is electrically connected to the first terminal 30112 of the switching transistor 3011-1 of the first unidirectional electrostatic conduction unit 301-1, and the first electrostatic discharge terminal 3041 is electrically connected to the second terminal 30113 of the switching transistor 3011-1 of the first unidirectional electrostatic conduction unit 301-1.

[0114] Signal line 2 is electrically connected to the second terminal 30113 of the switching transistor 3011-1 of the second unidirectional electrostatic conduction unit 301-2, and the second electrostatic discharge terminal 3042 is electrically connected to the first terminal 30112 of the switching transistor 3011-1 of the second unidirectional electrostatic conduction unit 301-2.

[0115] In some embodiments, as shown in Figures 12 and 15, the unidirectional electrostatic conduction subunit 3011 further includes a third electrode 30114, which is located between the first electrode 30112 and the second electrode 30113 and the first active layer 30111.

[0116] It should be noted that Figure 8 is a projection diagram of an electrostatic discharge (ESD) protection circuit as shown in Figure 2; Figure 9 is a projection diagram of an ESD protection circuit as shown in Figure 3; Figure 10 is a cross-sectional view along AA' in Figure 9; Figure 11 is a projection diagram of an ESD protection circuit as shown in Figure 5; Figure 12 is a cross-sectional view along BB' in Figure 11; Figure 13 is a projection diagram of an ESD protection circuit as shown in Figure 6; Figure 14 is a projection diagram of an ESD protection circuit as shown in Figure 7; and Figure 15 is a cross-sectional view along EE' in Figure 14.

[0117] In practice, the first active layer comprises a semiconductor material, such as polysilicon. During the fabrication of the first active layer, a semiconductor layer is first formed, and then the semiconductor layer is doped in regions corresponding to the first and second doped regions to form conductive first and second doped regions. The region between the first and second doped regions is an undoped semiconductor channel region.

[0118] In some embodiments, as shown in Figures 7 and 9, the first doped region P1, the channel region P3, and the second doped region P2 in the first active layer 30111 are arranged sequentially in the direction from the second unidirectional electrostatic conduction unit 301-2 to the first unidirectional electrostatic conduction unit 301-1. The first electrode 30112 and the second electrode 30113 are also arranged in the direction from the second unidirectional electrostatic conduction unit 301-2 to the first unidirectional electrostatic conduction unit 301-1. That is, different regions of the first active layer are arranged laterally, and the transistor electrodes are arranged laterally, thereby facilitating the lateral arrangement of the series-connected unidirectional electrostatic conduction units.

[0119] In some embodiments, as shown in FIG8 and FIG10, the first electrode 30112 and the second electrode 30113 are disposed in the same layer on the side of the first active layer 30111 away from the substrate 1.

[0120] Multiple unidirectional electrostatic conduction units are connected in series between the signal line and the first electrostatic discharge terminal and / or between the signal line and the second electrostatic discharge terminal; in any two unidirectional electrostatic conduction units 301 connected in series between the signal line 2 and the first electrostatic discharge terminal 3041 and / or between the signal line 2 and the second electrostatic discharge terminal 3042, the second doped region P2 of one unidirectional electrostatic conduction unit 301 is adjacent to the first doped region P1 of the other unidirectional electrostatic conduction unit 301, and the second electrode 30113 of one unidirectional electrostatic conduction unit 301 is integrally connected to the first electrode 30112 of the other unidirectional electrostatic conduction unit 301.

[0121] In the ultrasonic imaging device provided in this embodiment, when multiple unidirectional electrostatic conduction units are connected in series between the signal line and the first electrostatic discharge terminal and / or the signal line and the second electrostatic discharge terminal in the electrostatic protection circuit, in any two unidirectional electrostatic conduction units connected in series between the signal line and the first electrostatic discharge terminal and / or the second electrostatic discharge terminal of the signal line, the second doped region of one unidirectional electrostatic conduction unit is adjacent to the first doped region of the other unidirectional electrostatic conduction unit. This allows the first active layers of the two unidirectional electrostatic conduction units connected in series to be integrally connected, thereby reducing the design and fabrication difficulty of the first active layer. Furthermore, in any two unidirectional electrostatic conduction units connected in series between the signal line and the first or second electrostatic discharge terminal, the second electrode of one unidirectional electrostatic conduction unit is integrally connected to the first electrode of the other unidirectional electrostatic conduction unit. This reduces the difficulty of connecting the two unidirectional electrostatic conduction units in series, as well as the design and fabrication difficulty of the first and second electrodes.

[0122] In some embodiments, as shown in Figures 7 and 9, the first electrode 30112, the second electrode 30113, and the signal line 2 are arranged on the same layer; the signal line 2 and the first electrode 30112 and the second electrode 30113 electrically connected to it are integrally connected. This reduces the difficulty of electrically connecting the signal line to the electrostatic discharge protection circuit and also helps to save wiring space.

[0123] In some embodiments, at least a portion of the signal line is multiplexed as a first pole and a second pole, which are electrically connected thereto respectively.

[0124] In some embodiments, as shown in FIG10, FIG12 and FIG15, the ultrasonic imaging device further includes: a buffer layer 5 located between the substrate 1 and the first active layer 30111, a first insulating layer 6 located between the first active layer 30111 and the first electrode 30112 and the second electrode 30113, and a second insulating layer 7 located between the first insulating layer 6 and the first electrode 30112 and the second electrode 30113;

[0125] The first electrode 30112 is electrically connected to the first doped region P1 through a first via 9 penetrating the first insulating layer 6 and the second insulating layer 7, and the second electrode 30113 is electrically connected to the second doped region P2 through a second via 8 penetrating the first insulating layer 6 and the second insulating layer 7.

[0126] In some embodiments, as shown in Figures 10, 12, and 15, in the region where the first electrode 30112 and the second electrode 30113 are integrally connected, the first via 9 and the second via 8 form a complete via.

[0127] In some embodiments, as shown in Figures 9, 11, and 14, when the unidirectional electrostatic conduction unit 301 includes a plurality of parallel unidirectional electrostatic conduction subunits 3011, the plurality of parallel unidirectional electrostatic conduction subunits 3011 are arranged sequentially along the extension direction of the signal line 2.

[0128] It should be noted that when a unidirectional electrostatic conduction unit includes multiple parallel unidirectional electrostatic conduction sub-units, and each unidirectional electrostatic conduction sub-unit includes a switching transistor, the multiple parallel unidirectional electrostatic conduction sub-units are arranged sequentially along the extension direction of the signal line, i.e., arranged vertically. The multiple parallel unidirectional electrostatic conduction sub-units arranged vertically can be regarded as a complete transistor.

[0129] In some embodiments, as shown in Figures 9, 11, and 14, the first active layers 30111 of a plurality of parallel unidirectional electrostatic conduction subunits 3011 are disconnected from each other.

[0130] It should be noted that, since a complete transistor is composed of multiple parallel unidirectional electrostatic conduction subunits arranged vertically, the total width W of the multiple parallel unidirectional electrostatic conduction subunits in the direction perpendicular to the series connection of the unidirectional electrostatic conduction subunits is the width of the channel region of the complete transistor composed of parallel unidirectional electrostatic conduction subunits in the direction perpendicular to the series connection of the unidirectional electrostatic conduction subunits, and is simply referred to as the width of the channel region; the length L of the channel region of the unidirectional electrostatic conduction subunits in the direction of series connection of the unidirectional electrostatic conduction subunits is the length of the channel region of the complete transistor composed of parallel unidirectional electrostatic conduction subunits in the direction of series connection of the unidirectional electrostatic conduction subunits, and is simply referred to as the length of the channel region.

[0131] It should be noted that the aspect ratio of the channel region in the first active layer affects the transistor's conduction current, which in turn affects the electrostatic discharge efficiency and the effectiveness of the electrostatic protection circuit. With the channel length L remaining constant, increasing the total width W of the channel region in the unidirectional electrostatic conduction unit within a certain range can increase the conduction current of a complete transistor composed of multiple parallel unidirectional electrostatic conduction subunits arranged vertically. This increases the conduction current of the unidirectional electrostatic conduction unit and improves the electrostatic protection effect.

[0132] The electrostatic discharge (ESD) protection circuit provided in this embodiment disconnects the first active layers of the vertically arranged transistors from each other, thereby splitting the unidirectional ESD conduction unit into multiple parallel unidirectional ESD conduction sub-units. This increases the total width W of the channel region in the direction perpendicular to the series connection of the unidirectional ESD conduction units, increases the conduction current of the unidirectional ESD conduction units, and improves the ESD protection effect. Simultaneously, it reduces the fabrication difficulty of the first active layer.

[0133] In some embodiments, the width L of the channel region of each unidirectional electrostatic conduction subunit is equal in the direction in which the unidirectional electrostatic conduction units are connected in series.

[0134] In some embodiments, when unidirectional electrostatic conduction includes multiple parallel unidirectional electrostatic conduction sub-units, the channel regions of the multiple parallel unidirectional electrostatic conduction sub-units have equal widths in the direction perpendicular to the series connection of the unidirectional electrostatic conduction units.

[0135] In some embodiments, as shown in Figures 8, 9, 11, 13, and 14, the shape of the first active layer 30111 projected onto the substrate is rectangular, and the shapes of the channel region P3, the first doped region P1, and the second doped region P2 are rectangular.

[0136] In some embodiments, as shown in Figures 8, 9, 11, 13, and 14, the length L of the channel region P3 in the direction in which the unidirectional electrostatic conduction units 301 are connected in series (i.e., the length of the channel region) is greater than or equal to 3 micrometers and less than or equal to 20 micrometers. The total width W of the channel region P3 in the unidirectional electrostatic conduction unit 301 in the direction perpendicular to the direction in which the unidirectional electrostatic conduction units 301 are connected in series (i.e., the width of the channel region) is greater than or equal to 30 micrometers and less than or equal to 1000 micrometers. This increases the size of the channel region, thereby increasing the conduction current of the unidirectional electrostatic conduction unit and improving the electrostatic protection effect.

[0137] It should be noted that in related technologies, electrostatic discharge (ESD) protection circuits typically use smaller transistors, with the transistor channel region being much smaller than the aforementioned W and L ranges, resulting in lower transistor conduction current. The ESD protection circuit provided in this disclosure has W greater than or equal to 30 micrometers and less than or equal to 1000 micrometers, and L greater than or equal to 3 micrometers and less than or equal to 20 micrometers, which increases the conduction current by approximately 10 to 100 times compared to smaller transistors. Furthermore, because the series-connected unidirectional electrostatic conduction units and signal lines in the ESD protection circuit are arranged laterally, the overall conduction current of the ESD protection circuit can be further increased, making the overall conduction current of the ESD protection circuit provided in this disclosure approximately 100 to 1000 times higher than that of ESD protection circuits with smaller transistors and non-laterally arranged transistors in related technologies.

[0138] It should be noted that, as shown in Figures 8 and 13, when the unidirectional electrostatic conduction unit 301 includes one unidirectional electrostatic conduction subunit 3011, the total width W of the channel region P3 in the unidirectional electrostatic conduction unit 301 in the direction perpendicular to the series connection of the unidirectional electrostatic conduction units 301 is the same as the width W1 of the channel region P3 of the single unidirectional electrostatic conduction subunit 3011 in the direction perpendicular to the series connection of the unidirectional electrostatic conduction units 301. As shown in Figures 9, 11, and 14, when the unidirectional electrostatic conduction unit 301 includes multiple parallel unidirectional electrostatic conduction subunits 3011, the total width W of the channel region P3 in the unidirectional electrostatic conduction unit 301 in the direction perpendicular to the series connection of the unidirectional electrostatic conduction units 301 is the sum of the widths W1 of the channel regions P3 of the multiple unidirectional electrostatic conduction subunits 3011 in the direction perpendicular to the series connection of the unidirectional electrostatic conduction units 301. In Figures 9 and 11, taking the unidirectional electrostatic conduction unit 301 as an example, which includes 6 parallel unidirectional electrostatic conduction subunits 3011, W = 6 × W1. In Figure 14, taking the unidirectional electrostatic conduction unit 301 as an example, which includes 5 parallel unidirectional electrostatic conduction subunits 3011, W = 5 × W1.

[0139] In some embodiments, the width W1 of a single unidirectional electrostatic conduction subunit in the direction perpendicular to the series connection of the unidirectional electrostatic conduction units 301 is greater than or equal to 3 micrometers and less than or equal to 200 micrometers.

[0140] In some embodiments, as shown in Figures 2-5 and 8-12, the switching transistor 3011-1 is a PIN diode.

[0141] As shown in Figures 10 and 12, the first doped region P1 is the hole doped region P+, the second doped region P2 is the electron doped region N+, the first electrode 30112 is the positive electrode J+, and the second electrode 30113 is the negative electrode J-.

[0142] In some embodiments, the switching transistor is a PIN diode, for example, W = 300 micrometers and L = 5 micrometers.

[0143] When the switching transistor is a PIN diode, in some embodiments, as shown in Figures 9 and 11, the first pole 30112 (positive pole J+) of multiple parallel unidirectional electrostatic conduction subunits 3011 is integrally connected, and the second pole 30113 (negative pole J-) of multiple parallel unidirectional electrostatic conduction subunits 3011 is integrally connected.

[0144] It should be noted that during the doping process of the first and second doped regions of the first active layer of the PIN diode, a metal light-shielding pattern needs to be set above the channel region to shield it and prevent damage to the channel region. The light-shielding pattern can be removed after the doping process. That is, in some embodiments, as shown in Figures 8-10, the channel region P3 of the PIN diode is not covered by the light-shielding pattern. In other words, the PIN diode does not include a third electrode.

[0145] In some embodiments, as shown in Figures 8 and 9, the orthographic projection of the first electrode 30112 and the second electrode 30113 onto the substrate is a strip shape.

[0146] Alternatively, the light-shielding pattern can be retained after the doping process. In some embodiments, as shown in Figures 11 and 12, the PIN diode PIN further includes a third electrode 30114;

[0147] The third electrode 30114 is the first light-shielding pattern. The third electrode 30114 is located between the first active layer 30111 and the positive electrode J+. The orthogonal projection of the third electrode 30114 on the substrate 1 covers the orthogonal projection of the channel region P3 on the substrate 1. The third electrode 30114 is electrically connected to the positive electrode J+ or the negative electrode J-.

[0148] Specifically, as shown in Figure 12, the third electrode 30114 is located between the first insulating layer 6 and the second insulating layer 7.

[0149] It should be noted that in Figures 4, 5, and 11, in the first unidirectional electrostatic conduction unit 301-1, the third terminal 30114 of the PIN diode is electrically connected to the negative terminal J-, and in the second unidirectional electrostatic conduction unit 301-2, the third terminal 30114 of the PIN diode is electrically connected to the positive terminal J+.

[0150] In specific implementations, as shown in Figure 16, the third terminal 30114 of all PIN diodes in the electrostatic discharge (ESD) circuit is electrically connected to the negative terminal J-, or as shown in Figure 17, the third terminal 30114 of all PIN diodes in the ESD circuit is electrically connected to the positive terminal J+. Alternatively, as shown in Figures 4 and 5, the third terminal 30114 of all PIN diodes in all first unidirectional ESD conduction units 301-1 is electrically connected to the positive terminal J+, and the third terminal 30114 of all PIN diodes in all second unidirectional ESD conduction units 301-2 is electrically connected to the negative terminal J-. Alternatively, as shown in Figure 18, the third terminal 30114 of all PIN diodes in all first unidirectional ESD conduction units 301-1 is electrically connected to the negative terminal J-, and the third terminal 30114 of all PIN diodes in all second unidirectional ESD conduction units 301-2 is electrically connected to the positive terminal J+. Alternatively, as shown in Figures 19 to 22, when multiple unidirectional electrostatic conduction units 301 are connected in series on one side of signal line 2, the third terminal 30114 of the PIN diode PIN of some of the unidirectional electrostatic conduction units 301 is electrically connected to the positive terminal J+, and the third terminal 30114 of the PIN diode PIN of the remaining unidirectional electrostatic conduction units 301 is electrically connected to the negative terminal J-.

[0151] When the unidirectional electrostatic conduction unit includes multiple parallel unidirectional electrostatic conduction subunits, in some embodiments, as shown in FIG11, the third pole 30114 of the multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected.

[0152] At one end of the extension direction of the third electrode 30114, the third electrode 30114 is electrically connected to the positive electrode J+ or the negative electrode J-.

[0153] It should be noted that Figure 11 uses the example of the third electrode 30114 in the first unidirectional electrostatic conduction unit 301-1 being electrically connected to the negative electrode J- at one end in the extension direction, and the third electrode 30114 in the second unidirectional electrostatic conduction unit 301-2 being electrically connected to the positive electrode J+ at one end in the extension direction.

[0154] In this embodiment, the third pole of the multiple parallel unidirectional electrostatic conduction subunits, i.e., the first light-shielding pattern, is integrally connected, which reduces the difficulty of manufacturing and designing the first light-shielding pattern. Furthermore, since the positive poles of the multiple parallel unidirectional electrostatic conduction subunits are integrally connected and the negative poles are integrally connected, the integrally connected first light-shielding pattern is electrically connected at one end of its extension direction to either the integrally connected positive or negative pole, thus achieving electrical connection between the first light-shielding pattern of each unidirectional electrostatic conduction subunit and the positive or negative pole.

[0155] In some embodiments, as shown in FIG11, the third electrode 30114 is electrically connected to the positive electrode J+ or the negative electrode J- through a third via 12 penetrating the second insulating layer (not shown). FIG11 illustrates the example of the third electrode 30114 in the first unidirectional electrostatic conduction unit 301-1 being electrically connected to the negative electrode J- through the third via 12, and the third electrode 30114 in the second unidirectional electrostatic conduction unit 301-2 being electrically connected to the positive electrode J+ through the third via 12.

[0156] In some embodiments, as shown in FIG11, the third electrode 30114 has an L-shaped orthogonal projection onto the substrate, and the part of the positive electrode J+ and / or part of the negative electrode J- has an L-shaped orthogonal projection onto the substrate. The L-shaped third electrode 30114 includes a first strip portion 16 and a second strip portion 17 connected to the first strip portion 16. The L-shaped positive electrode J+ and / or the L-shaped negative electrode J- includes a third strip portion 18 and a fourth strip portion 19 connected to the third strip portion 18.

[0157] The first strip 16 extends in a direction perpendicular to the direction in which the unidirectional electrostatic conduction units are connected in series. The second strip 17 extends in a direction in which the unidirectional electrostatic conduction units are connected in series. The third strip 18 extends in a direction perpendicular to the direction in which the unidirectional electrostatic conduction units are connected in series. The fourth strip 19 extends in a direction in which the unidirectional electrostatic conduction units are connected in series. The third strip 18 is electrically connected to the first active layer 30111, and the fourth strip 19 is electrically connected to the second strip 17 through the third via 12.

[0158] Specifically, when the unidirectional electrostatic conduction unit includes multiple parallel unidirectional electrostatic conduction sub-units, as shown in Figure 11, the shape of the orthogonal projection of the integrally connected third electrode 30114 on the substrate is L-shaped, and the shape of the orthogonal projection of the integrally connected positive electrode J+ or the integrally connected negative electrode J- on the substrate is L-shaped.

[0159] The integrally connected L-shaped third electrode 30114 includes a first strip portion 16 and a second strip portion 17 connected to the first strip portion 16. The integrally connected L-shaped positive electrode J+ and / or the integrally connected L-shaped negative electrode J- includes a third strip portion 18 and a fourth strip portion 19 connected to the third strip portion 18.

[0160] Alternatively, in some embodiments, as shown in Figures 6, 7, and 13-15, the switching transistor 3011-1 is a thin-film transistor (TFT).

[0161] The first doped region P1 and the second doped region P2 are electronic doped regions N+;

[0162] One of the first electrode 30112 and the second electrode 30113 is the first drain electrode D1, and the other of the first electrode 30112 and the second electrode 30113 is the first source electrode S1;

[0163] The thin-film transistor TFT1 also includes a third electrode 30114 electrically connected to the first source electrode S, and the third electrode 30114 is the first gate electrode G1.

[0164] When the unidirectional electrostatic conduction unit includes multiple parallel unidirectional electrostatic conduction sub-units, in some embodiments, as shown in Figures 14 and 24, the first gates G1 of the multiple parallel unidirectional electrostatic conduction sub-units 3011 are integrally connected.

[0165] In some embodiments, as shown in Figures 6, 7, and 13 to 15, all thin-film transistors included in the electrostatic discharge protection circuit 3 are N-type thin-film transistors.

[0166] In some embodiments, as shown in Figures 6, 7, and 13-15, the first electrode 30112 is the first source electrode S1, and the second electrode 30113 is the first drain electrode D1.

[0167] When a unidirectional electrostatic conduction unit includes multiple parallel unidirectional electrostatic conduction subunits, in some embodiments, as shown in FIG14, in the first unidirectional electrostatic conduction unit 301-1 connected to the signal line 2, the first source S1 of multiple parallel unidirectional electrostatic conduction subunits 3011 is integrally connected, and the first drain D1 of multiple parallel unidirectional electrostatic conduction subunits 3011 is disconnected from each other.

[0168] In the first unidirectional electrostatic conduction unit 301-1 connected to the first electrostatic discharge terminal 3041, the first sources S1 of multiple parallel unidirectional electrostatic conduction subunits 3011 are disconnected from each other, and the first drains D1 of multiple parallel unidirectional electrostatic conduction subunits 3011 are connected as a whole.

[0169] In addition to the first unidirectional electrostatic conduction unit 301-1 connected to signal line 2 and the first unidirectional electrostatic conduction unit 301-1 connected to the first electrostatic discharge terminal 3041, the first sources S1 of the multiple parallel unidirectional electrostatic conduction subunits 3011 are disconnected from each other, and the first drains D1 of the multiple parallel unidirectional electrostatic conduction subunits 3011 are disconnected from each other.

[0170] In the second unidirectional electrostatic conduction unit 301-2 connected to the signal line 2, the first drains D1 of multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected, and the first sources S1 of multiple parallel unidirectional electrostatic conduction subunits 3011 are disconnected from each other.

[0171] In the remaining second unidirectional electrostatic conduction units 301-1, except for the second unidirectional electrostatic conduction unit 301-2 connected to signal line 2, the first source S1 of the multiple parallel unidirectional electrostatic conduction subunits 3011 is disconnected from each other, and the first drain D1 of the multiple parallel unidirectional electrostatic conduction subunits 3011 is disconnected from each other.

[0172] Alternatively, in some embodiments, as shown in FIG23, all thin-film transistors included in the electrostatic discharge protection circuit 3 are P-type thin-film transistors.

[0173] In some embodiments, as shown in FIG24, the first electrode 30112 is the first drain electrode D1, and the second electrode 30113 is the first source electrode S1.

[0174] When a unidirectional electrostatic conduction unit includes multiple parallel unidirectional electrostatic conduction subunits, in some embodiments, as shown in FIG24, in the first unidirectional electrostatic conduction unit 301-1 connected to the signal line 2, the first drains D1 of multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected, and the first sources S1 of multiple parallel unidirectional electrostatic conduction subunits 3011 are disconnected from each other.

[0175] In the first unidirectional electrostatic conduction unit 301-1 other than the first unidirectional electrostatic conduction unit 301-1 connected to signal line 2, in the first unidirectional electrostatic conduction unit 301-1 connected to the first electrostatic release terminal 3041, the first source S1 of the multiple parallel unidirectional electrostatic conduction sub-units 3011 is disconnected from each other, and the first drain D1 of the multiple parallel unidirectional electrostatic conduction sub-units 3011 is disconnected from each other.

[0176] In the second unidirectional electrostatic conduction unit 301-2 connected to the signal line 2, the first source S1 of multiple parallel unidirectional electrostatic conduction subunits 3011 is integrally connected, and the first drain D1 of multiple parallel unidirectional electrostatic conduction subunits 3011 is disconnected from each other.

[0177] In the second unidirectional electrostatic conduction unit 301-2 connected to the second electrostatic discharge terminal, the first drains D1 of multiple parallel unidirectional electrostatic conduction subunits 3011 are integrally connected, and the first sources S1 of multiple parallel unidirectional electrostatic conduction subunits 3011 are disconnected from each other.

[0178] In the remaining second unidirectional electrostatic conduction units 301-1, except for the second unidirectional electrostatic conduction unit 301-2 connected to signal line 2 and the second unidirectional electrostatic conduction unit 301-2 connected to the second electrostatic discharge terminal, the first source S1 of the multiple parallel unidirectional electrostatic conduction subunits 3011 is disconnected from each other, and the first drain D1 of the multiple parallel unidirectional electrostatic conduction subunits 3011 is disconnected from each other.

[0179] In some embodiments, as shown in FIG13, FIG14 and FIG24, the first source S1 of the thin film transistor TFT1 has an L-shaped orthogonal projection onto the substrate; the L-shaped first source S1 includes a fifth strip portion 20 and a sixth strip portion 21 connected to the fifth strip portion 20.

[0180] The extension direction of the fifth strip 20 is perpendicular to the direction in which the unidirectional electrostatic conduction units 301 are connected in series, and the extension direction of the sixth strip 21 is the direction in which the unidirectional electrostatic conduction units 301 are connected in series.

[0181] In some embodiments, as shown in Figures 13, 14, and 24, the shape of the first drain D1 projected onto the substrate is a strip.

[0182] The pattern formed by the first source electrode S1 and the first drain electrode D1 integrally connected to the first source electrode S1 has an L-shaped orthogonal projection onto the substrate.

[0183] In some embodiments, as shown in FIG13, the first gate G1 of the thin film transistor TFT1 has an L-shaped orthogonal projection onto the substrate. The L-shaped first gate G1 includes a seventh strip portion 22 and an eighth strip portion 23 connected to the seventh strip portion 22.

[0184] The extension direction of the seventh strip 22 is perpendicular to the direction in which the unidirectional electrostatic conduction units 301 are connected in series, and the extension direction of the eighth strip 23 is in the direction in which the unidirectional electrostatic conduction units 301 are connected in series; the sixth strip 21 is electrically connected to the eighth strip 23 through the fourth through hole 13 that penetrates the second insulating layer (not shown).

[0185] Alternatively, when the unidirectional electrostatic conduction unit includes multiple parallel unidirectional electrostatic conduction sub-units, in some embodiments, as shown in FIG14 and FIG24, the first gate G1 integrally connected in the multiple parallel unidirectional electrostatic conduction sub-units 3011 includes: multiple ninth strip portions 24 and multiple tenth strip portions 25, the multiple ninth strip portions 24 and multiple tenth strip portions 25 being alternately arranged in the parallel direction.

[0186] The extension direction of the ninth strip 24 is perpendicular to the direction in which the unidirectional electrostatic conduction units 301 are connected in series, and the extension direction of the tenth strip 25 is in the direction in which the unidirectional electrostatic conduction units 301 are connected in series; the sixth strip 21 is electrically connected to the tenth strip 25 through the fourth through hole 13 that penetrates the second insulating layer (not shown).

[0187] In some embodiments, as shown in Figures 1-9, 11, 13, 14, and 16-24, the ultrasound imaging device further includes a first electrostatic discharge signal line 302 electrically connected to the first electrostatic discharge terminal 3041, and a second electrostatic discharge signal line 303 electrically connected to the second electrostatic discharge terminal 3042. Thus, when electrostatic charge accumulates on the signal lines, the electrostatic charge is discharged through the first and second electrostatic discharge signal lines.

[0188] In some embodiments, as shown in FIG1, at least a portion of the first electrostatic discharge terminals 3041 of the electrostatic discharge protection circuits 3 are electrically connected to the same first electrostatic discharge signal line 302, and at least a portion of the second electrostatic discharge terminals 3042 of the electrostatic discharge protection circuits 3 are electrically connected to the same second electrostatic discharge signal line 303. This reduces the number of electrostatic discharge signal lines, saves wiring space, and reduces costs.

[0189] In specific implementations, when it is necessary to apply voltage levels to the first and second electrostatic discharge signal lines, a first voltage level is applied to the first electrostatic discharge signal line, and a second voltage level is applied to the second electrostatic discharge signal line, wherein the voltage of the first voltage level is greater than the voltage of the second voltage level. Furthermore, when voltage levels are applied to both the first and second electrostatic discharge signal lines, the first voltage level applied to the first electrostatic discharge signal line is the voltage level with the highest voltage in the ultrasound imaging device, and the second voltage level applied to the second electrostatic discharge signal line is the voltage level with the lowest voltage in the ultrasound imaging device. In some embodiments, the second voltage level is a ground voltage signal.

[0190] In some embodiments, as shown in Figures 8, 9, 11, 13, 14, and 24, the extending directions of the first electrostatic discharge signal line 302 and the second electrostatic discharge signal line 303 intersect the extending direction of the signal line 2; for example, the extending directions of the first electrostatic discharge signal line 302 and the second electrostatic discharge signal line 303 are perpendicular to the extending direction of the signal line 2, that is, the first electrostatic discharge signal line 302 and the second electrostatic discharge signal line 303 extend laterally.

[0191] The first electrostatic discharge signal line 302 and the second electrostatic discharge signal line 303 are located on different layers from signal line 2;

[0192] The orthographic projection of the unidirectional electrostatic conduction unit 301 onto the substrate is located between the orthographic projection of the first electrostatic discharge signal line 302 onto the substrate and the orthographic projection of the second electrostatic discharge signal line 303 onto the substrate.

[0193] It should be noted that when the signal line includes multiple straight segments, the extension direction of the straight segment of the signal line connected to the unidirectional electrostatic transmission unit intersects with the extension directions of the first electrostatic discharge signal line and the second electrostatic discharge signal line.

[0194] The electrostatic discharge (ESD) protection circuit provided in this embodiment simplifies wiring by having the series-connected unidirectional ESD conduction units arranged laterally along the extension direction perpendicular to the straight segment of the signal line. The unidirectional ESD conduction units are located between the first ESD release signal line and the second ESD release signal line, and the first ESD release signal line and the second ESD release signal line are also arranged laterally. This makes it easier to achieve multiple ESD protection circuits connected to the same first ESD release signal line and the same second ESD release signal line.

[0195] In some embodiments, the first electrostatic discharge signal line and the second electrostatic discharge signal line are disposed on the same layer, and the first electrostatic discharge signal line and the second electrostatic discharge signal line are not on the same layer as the straight segment of the signal line.

[0196] The first electrostatic discharge signal line and the second electrostatic discharge signal line are located between the first active layer and the first electrode; for example, the first electrostatic discharge signal line and the second electrostatic discharge signal line are located between the first insulating layer and the second insulating layer.

[0197] In some embodiments, as shown in Figures 8 and 9, the switching transistor 3011-1 is a PIN diode, and the PIN diode does not include a third electrode, i.e., a first light-shielding pattern. The second electrode 30113, i.e., the negative electrode J- of the first unidirectional electrostatic conduction unit 301-1 is electrically connected to the first electrostatic discharge signal line 302 through a fifth via 10 penetrating the second insulating layer (not shown). The first electrode 30112, i.e., the positive electrode J+ of the second unidirectional electrostatic conduction unit 301-2 is electrically connected to the second electrostatic discharge signal line 303 through a sixth via 11 penetrating the second insulating layer (not shown).

[0198] As shown in Figures 8 and 9, the second pole 30113, i.e., the negative pole J- of the first unidirectional electrostatic conduction unit 301-1, can serve as the first electrostatic discharge terminal 3041 through the fifth via 10 connected to the first electrostatic discharge signal line 302; the first pole 30112, i.e., the positive pole J+ of the second unidirectional electrostatic conduction unit 301-2, can serve as the second electrostatic discharge terminal 3042 through the sixth via 11 connected to the second electrostatic discharge signal line 303.

[0199] Alternatively, in some embodiments, the switching transistor further includes a third electrode, and the first electrostatic discharge signal line and the second electrostatic discharge signal line are disposed on the same layer as the third electrode.

[0200] In some embodiments, as shown in FIG11, the switching transistor 3011-1 is a PIN diode. The PIN diode includes a third electrode 30114, i.e., a first light-shielding pattern, a first electrostatic discharge signal line 302, and a second electrostatic discharge signal line 303, which are disposed on the same layer as the third electrode 30114, i.e., the first light-shielding pattern.

[0201] In some embodiments, as shown in FIG11, the first electrostatic discharge signal line 302 is integrally connected to the third pole 30114 of the first unidirectional electrostatic conduction unit 301-1, i.e., the first light-shielding pattern, and the second electrostatic discharge signal line 303 is integrally connected to the third pole 30114 of the second unidirectional electrostatic conduction unit 301-2, i.e., the first light-shielding pattern.

[0202] Specifically, as shown in Figure 11, since the second electrode 30113 (the negative electrode J-) of the first unidirectional electrostatic conduction unit 301-1 is electrically connected to the third electrode 30114 (the first light-shielding pattern), the point where the second electrode 30113 of the first unidirectional electrostatic conduction unit 301-1, which is electrically connected to the first electrostatic discharge signal line 302, is electrically connected to the third electrode 30114 (the first light-shielding pattern) through the third via 12 can serve as the first electrostatic discharge terminal 3041. Because the first electrostatic discharge signal line 302 and the third electrode 30114 (the first light-shielding pattern) are integrally connected, there is no need to separately set up an area for the second electrode 30113 to be electrically connected to the first electrostatic discharge signal line 302, thus achieving the electrical connection between the first electrostatic discharge signal line 302 and the first unidirectional electrostatic conduction unit 301-1. Since the first electrode 30112 (positive electrode J+) of the second unidirectional electrostatic conduction unit 301-2 is electrically connected to the third electrode 30114 (first light-shielding pattern), the first electrode 30112 of the second unidirectional electrostatic conduction unit 301-2, which is electrically connected to the second electrostatic discharge signal line 303, can serve as the second electrostatic discharge terminal 3042 at the point where it is electrically connected to the third electrode 30114 (first light-shielding pattern) through the third via 12. Because the second electrostatic discharge signal line 303 is integrally connected to the third electrode 30114 (first light-shielding pattern), there is no need to separately provide an area for the first electrode 30112 and the second electrostatic discharge signal line 303 to be electrically connected, thus achieving the electrical connection between the second electrostatic discharge signal line 303 and the second unidirectional electrostatic conduction unit 301-2.

[0203] Alternatively, in some embodiments, as shown in Figures 13, 14, and 24, the switching transistor 3011-1 is a thin-film transistor (TFT1), and the first electrostatic discharge signal line 302 and the second electrostatic discharge signal line 303 are disposed on the same layer as the first gate G1 of the thin-film transistor TFT1.

[0204] In some embodiments, as shown in Figures 13 and 14, the second electrode 30113 of the first unidirectional electrostatic conduction unit 301-1, i.e., the first drain D1, is electrically connected to the first electrostatic discharge signal line 302 through a fifth via 10 penetrating the second insulating layer (not shown); the point where the first drain D1 is electrically connected to the first electrostatic discharge signal line 302 through the fifth via 10 can serve as the first electrostatic discharge terminal 3041.

[0205] The first gate G1 of the second unidirectional electrostatic conduction unit 301-2 is integrally connected with the second electrostatic discharge signal line 303.

[0206] Specifically, as shown in Figures 13 and 14, since the first electrode 30112 (i.e., the first source S1) of the second unidirectional electrostatic conduction unit 301-2 is electrically connected to the first gate G1, the first electrode 30112 of the second unidirectional electrostatic conduction unit 301-2, which is electrically connected to the second electrostatic discharge signal line 303, can serve as the second electrostatic discharge terminal 3042 through the fourth via 13 connected to the first gate G1. Because the second electrostatic discharge signal line 303 is integrally connected to the first gate G1, there is no need to separately provide a region for the first electrode 30112 and the second electrostatic discharge signal line 303 to be electrically connected, thus achieving the electrical connection between the second electrostatic discharge signal line 303 and the second unidirectional electrostatic conduction unit 301-2.

[0207] In some embodiments, as shown in FIG24, the first electrode 30112 of the second unidirectional electrostatic conduction unit 301-2, namely the first drain electrode D1, is electrically connected to the second electrostatic discharge signal line 303 through the sixth via 11 penetrating the second insulating layer (not shown); the point where the first drain electrode D1 is electrically connected to the second electrostatic discharge signal line 303 through the sixth via 11 can serve as the second electrostatic discharge terminal 3042.

[0208] The first gate G1 of the first unidirectional electrostatic conduction unit 301-1 is integrally connected with the first electrostatic discharge signal line 302.

[0209] Specifically, as shown in Figure 24, since the second electrode 30113 of the first unidirectional electrostatic conduction unit 301-1, i.e., the first source S1, is electrically connected to the first gate G1, the point where the second electrode 30113 of the first unidirectional electrostatic conduction unit 301-1, which is electrically connected to the first gate G1 through the fourth via 13, can serve as the first electrostatic discharge terminal 3041. Because the first electrostatic discharge signal line 302 is integrally connected to the first gate G1, there is no need to separately provide a region for the second electrode 30113 to be electrically connected to the first electrostatic discharge signal line 302, thus achieving electrical connection between the first electrostatic discharge signal line 302 and the first unidirectional electrostatic conduction unit 301-1.

[0210] In some embodiments, as shown in FIG1, the peripheral area 102 includes: a binding area 1021 located on one side of the functional area 101 in the first direction Y;

[0211] The ultrasound imaging device also includes a plurality of binding electrodes 4 located in the binding area 1021; the plurality of binding electrodes 4 include a first binding electrode 401 electrically connected to the first electrostatic discharge signal line 302, a second binding electrode 402 electrically connected to the second electrostatic discharge signal line 303, and a third binding electrode 403 electrically connected to the signal line 2.

[0212] In some embodiments, the second bonding electrode is used to output a ground level signal.

[0213] In some embodiments, as shown in FIG1, in the area between the binding area 1021 and the functional area 101, multiple signal lines 2 are arranged along a second direction X, and the second direction X intersects with the first direction Y.

[0214] The surrounding area 102 also includes: a first sub-area 1022 located on the side of the binding area 1021 facing the functional area 101 in the first direction Y, and a second sub-area 1023 located on the side of the first sub-area 1022 facing the functional area 101 in the first direction Y;

[0215] A portion of the multiple signal lines 2 includes: a first portion 2-1 extending along the first direction Y; the orthographic projection of the first portion 2-1 onto the substrate 1 falls into the first sub-region 1022 and the bonding region 1021; and one end of the first portion 2-1 away from the functional region 101 is electrically connected to the third bonding electrode 403.

[0216] A portion of the multiple signal lines 2 includes: a second portion 2-2; the orthographic projection of the second portion 2-2 onto the substrate 1 falls into the second sub-region 1023, and at least the second portion 2-2 of the signal lines 2 extends along a third direction X1; the third direction X1 intersects both the first direction Y and the second direction X;

[0217] A portion of the multiple signal lines 2 includes a third portion 2-3 located on the side of the functional area 101 away from the binding area 1021 and extending along the first direction Y;

[0218] At least one of Part 1 2-1, Part 2 2-2, and Part 3 2-3 is electrically connected to the electrostatic protection circuit 3.

[0219] The ultrasonic imaging device provided in this embodiment of the present disclosure, wherein at least one of the first part, the second part, and the third part is electrically connected to an electrostatic discharge (ESD) protection circuit, can release the static electricity accumulated on the signal lines through the ESD protection circuit. When there is sufficient wiring space, the more points on the signal lines that are electrically connected to the ESD protection circuit, the better the ESD protection effect.

[0220] In some embodiments, as shown in FIG1, a portion of the multiple signal lines 2 includes a first portion 2-1, a second portion 2-2, and a third portion 2-3. That is, the first portion 2-1, the second portion 2-2, and the third portion 2-3 are different regions of the same signal line 2. In FIG1, the end of the first portion 2-1 away from the bonding region 1021 is electrically connected to the second portion 2-2; the portion of the signal line 2 also includes a fourth portion 2-4 electrically connected to both the second portion 2-2 and the third portion 2-3, and the orthographic projection of the fourth portion 2-4 on the substrate 1 extends from the functional region 101 to the peripheral region 102.

[0221] It should be noted that Figure 1 uses the example of the first part 2-1 being electrically connected to the electrostatic discharge (ESD) protection circuit 3. In actual implementation, as shown in Figure 25, the second part 2-2 can be electrically connected to the ESD protection circuit 3. Alternatively, as shown in Figure 26, the third part 2-3 can be electrically connected to the ESD protection circuit 3. Or, as shown in Figure 27, both the first part 2-1 and the third part 2-3 can be electrically connected to the ESD protection circuit 3. Alternatively, as shown in Figure 28, both the second part 2-2 and the third part 2-3 can be electrically connected to the ESD protection circuit 3. In Figures 27 and 28, in the first direction Y, the signal lines of the peripheral areas 102 located on both sides of the functional area 101 are electrically connected to the ESD protection circuit 3. This allows the ESD protection circuit 3 to release accumulated static electricity on the signal lines 2 in different peripheral areas 102, improving the ESD protection effect. Alternatively, the first, second, and third parts can all be electrically connected to the ESD protection circuit to further improve the ESD protection effect.

[0222] In some embodiments, as shown in FIG1 and FIG25-28, the first electrostatic discharge signal line 302, the unidirectional electrostatic conduction unit 301, and the second electrostatic discharge signal line 303 are arranged sequentially in the direction from the functional area 101 to the binding area 1021.

[0223] In some embodiments, as shown in FIG29, the ultrasound imaging device further includes:

[0224] Multiple sensing units are located in functional area 101; as shown in FIG30, sensing unit 24 includes: ultrasonic detection circuit 2401 and sound source transducer 2402 located on the side of ultrasonic detection circuit 2401 away from substrate (not shown); ultrasonic detection circuit 2401 includes transistor T.

[0225] It should be noted that Figure 30 is a schematic diagram of one equivalent circuit structure of the ultrasonic detection circuit 2401 and the sound source transducer 2402 electrically connected to it.

[0226] In some embodiments, as shown in FIG29, a plurality of sensing units 24 are arranged in an array along a first direction Y and a second direction X.

[0227] In some embodiments, the first active layer of the switching transistor and the second active layer of the transistor are disposed on the same layer, the portion of the signal line electrically connected to the electrostatic discharge protection circuit, the first and second terminals of the switching transistor are disposed on the same layer as the third and fourth terminals of the transistor, and the first electrostatic discharge signal line and the second electrostatic discharge signal line are disposed on the same layer as the second gate of the transistor.

[0228] Specifically, the transistor can be a thin-film transistor (TFT) or a metal-oxide-semiconductor field-effect transistor (MOS), without limitation. Furthermore, depending on the signal flow direction, the third terminal of the transistor can serve as its second source and the fourth terminal as its second drain; or, the third terminal can serve as the second drain and the fourth terminal as the second source, without further distinction.

[0229] In practice, the sound source transducer is electrically connected to the ultrasonic detection circuit. The sound source transducer is configured to convert the detected ultrasonic signal into an electrical signal, and the ultrasonic detection circuit is configured to obtain image data of the target object being tested based on the electrical signal.

[0230] In practical implementation, the sound source transducer can be a transceiver integrated device or a standalone sound source device. Of course, the type of sound source transducer can be determined according to the actual application environment, and no limitation is made here.

[0231] In some embodiments, the sound source transducer includes a first electrode, a piezoelectric thin film layer, and a second electrode disposed sequentially opposite to the substrate. The piezoelectric thin film material is used to realize the "sound-to-electric" conversion of the sound signal and is the sensitive material of the sound source transducer. For example, the piezoelectric thin film layer can be a piezoelectric polymer material such as PVDF or PVDF-TrFE, or a 1-3 composite piezoelectric material based on piezoelectric crystals such as PZT or PMN-PT. Of course, the sound source transducer may include other film layer structures besides those mentioned above, which are not limited here.

[0232] In some embodiments, the multiple signal lines include: multiple reset control lines Vr, multiple acquisition control lines Vc, multiple power signal lines Vdd, and multiple readout signal lines rd, all electrically connected to multiple sensing units. The ultrasound imaging device further includes: multiple reset signal lines Vb, multiple scan control lines g1, and multiple detection signal lines TX, all electrically connected to multiple sensing units.

[0233] In some embodiments, as shown in FIG30, the ultrasonic detection circuit in the equivalent circuit adopts a 4T1C (T represents transistor, C represents capacitor) structure, that is, four transistors T and one capacitor. The four transistors T are: first transistor T1, second transistor T2, third transistor T3, and fourth transistor T4, and the one capacitor is the first capacitor C1. The second gate of the first transistor T1 is electrically connected to the reset control line Vr, the third terminal of the first transistor T1 is electrically connected to the first node N1, and the fourth terminal of the first transistor T1 is electrically connected to the reset signal line Vb. The second gate of the second transistor T2 is electrically connected to the acquisition control line Vc, the third terminal of the second transistor T2 is electrically connected to the first node N1, and the fourth terminal of the second transistor T2 is electrically connected to the second node N2. The first electrode of the first capacitor C1 is electrically connected to the reset signal line Vb, and the second electrode of the first capacitor C1 is electrically connected to the second node N2. The third transistor T3 is a driving transistor, the second gate of the third transistor T3 is electrically connected to the second electrode of the first capacitor C1, the third terminal of the third transistor T3 is electrically connected to the power supply signal line Vdd, and the fourth terminal of the third transistor T3 is electrically connected to the third node N3. The second gate of the fourth transistor T4 is electrically connected to the scan control line g1, the third terminal of the fourth transistor T4 is electrically connected to the third node N3, and the fourth terminal of the fourth transistor T4 is electrically connected to the read signal line rd. One end of the sound source transducer 2402 is electrically connected to the first node N1, and the other end of the sound source transducer 2402 is electrically connected to the detection signal line TX.

[0234] In some embodiments, as shown in Figures 31 and 32, the reset control line Vr, the acquisition control line Vc, and the power signal line Vdd extend to the bonding area 1021 and are electrically connected to the third bonding electrode 402. Furthermore, the reset control line Vr, the acquisition control line Vc, and the power signal line Vdd are all electrically connected to at least one electrostatic discharge (ESD) protection circuit 3.

[0235] In some embodiments, the ultrasound imaging device further includes a driver chip, which is bonded to a bonding electrode in a bonding area. The driver chip can then provide or receive signals through the respective bonding electrode.

[0236] In some embodiments, as shown in FIG31, the read signal line rd extends to the bonding region 1021 and is electrically connected to the third bonding electrode 402. The read signal line rd is also electrically connected to at least one electrostatic discharge (ESD) protection circuit 3.

[0237] Alternatively, as shown in FIG32, the ultrasound imaging device further includes a multiplexing circuit 25 located between the functional area 101 and the binding area 1021; the multiplexing circuit 25 includes a plurality of multiplexing switches mux.

[0238] The multiple signal lines 2 also include multiple first signal lines mu;

[0239] The multiplexer mux is electrically connected to the signal reading signal line rd and the first signal line mu. The first signal line mu is also electrically connected to the third bonding electrode 403.

[0240] At least part of the electrostatic discharge protection circuit 3 is located in the orthographic projection of the substrate 1 between the orthographic projection of the multiplexer mux and the bonding area 1021.

[0241] At least part of the first signal line mu is electrically connected to the electrostatic discharge protection circuit 3.

[0242] In some embodiments, as shown in FIG33, the ultrasound imaging device further includes a gate drive circuit GOA electrically connected to a plurality of sensing units 24;

[0243] The multiple signal lines 2 also include: a gate drive signal line ga electrically connected to the gate drive circuit GOA; and the gate drive signal line ga electrically connected to the electrostatic discharge protection circuit 3.

[0244] In some embodiments, as shown in FIG33, the gate drive circuit GOA is electrically connected to the reset signal line Vb and the scan control line g1.

[0245] In summary, the ultrasound imaging device provided in this embodiment includes an electrostatic discharge (ESD) protection circuit electrically connected to the signal line. These circuits are arranged sequentially along the extension direction of the signal line. Even if a large amount of static electricity is generated on the signal line during the fabrication of the ultrasound imaging device, when the absolute value of the voltage formed by the accumulated static charge on the signal line is large, the charge can be discharged through the ESD discharge terminal of the ESD protection circuit. Therefore, the ESD protection circuit can effectively discharge the large absolute value of the voltage formed by the accumulated static charge on the signal line, preventing excessive static current from burning out the signal line due to static accumulation. This improves the yield of the ultrasound imaging device.

[0246] Although preferred embodiments of the invention have been described, those skilled in the art, upon learning the basic inventive concept, can make other changes and modifications to these embodiments. Therefore, the appended claims are intended to be interpreted as including both the preferred embodiments and all changes and modifications falling within the scope of the invention.

[0247] Obviously, those skilled in the art can make various modifications and variations to this disclosure without departing from its spirit and scope. Therefore, if such modifications and variations fall within the scope of the claims of this disclosure and their equivalents, this disclosure is also intended to include such modifications and variations.

Claims

1. An ultrasound imaging device, wherein, The ultrasound imaging device includes: A substrate, comprising a functional region and a peripheral region surrounding the functional region; Multiple signal lines are located on one side of the substrate; at least a portion of the signal lines include portions located in the peripheral region. Multiple electrostatic discharge (ESD) protection circuits are located on the same side of the substrate as the multiple signal lines; the orthographic projection of the multiple ESD protection circuits on the substrate is located in the peripheral area; at least a portion of the multiple signal lines are electrically connected to the ESD protection circuits; the ESD protection circuit includes: a unidirectional electrostatic conduction unit and an electrostatic discharge terminal; one end of the unidirectional electrostatic conduction unit is electrically connected to the electrostatic discharge terminal, and the other end of the unidirectional electrostatic conduction unit is electrically connected to the signal lines.

2. The ultrasound imaging device according to claim 1, wherein, The electrostatic protection circuit includes multiple unidirectional electrostatic conduction units and two electrostatic discharge terminals. The two electrostatic discharge terminals are respectively a first electrostatic discharge terminal and a second electrostatic discharge terminal; the plurality of unidirectional electrostatic conduction units include: at least one first unidirectional electrostatic conduction unit and at least one second unidirectional electrostatic conduction unit; The at least one first unidirectional electrostatic conduction unit is electrically connected between the first electrostatic discharge terminal and the signal line, and the at least one second unidirectional electrostatic conduction unit is electrically connected between the second electrostatic discharge terminal and the signal line; the at least one first unidirectional electrostatic conduction unit is configured to conduct when there is positive charge accumulation on the signal line and discharge the positive charge through the first electrostatic discharge terminal; the at least one second unidirectional electrostatic conduction unit is configured to conduct when there is negative charge accumulation on the signal line and discharge the negative charge through the second electrostatic discharge terminal.

3. The ultrasound imaging device according to claim 2, wherein, The electrostatic discharge protection circuit includes multiple unidirectional electrostatic conduction units connected in series between the first electrostatic discharge terminal and the second electrostatic discharge terminal.

4. The ultrasound imaging device according to claim 2 or 3, wherein, The plurality of unidirectional electrostatic conduction units are arranged along an extension direction parallel to the surface of the substrate and perpendicular to the signal line, and the at least one first unidirectional electrostatic conduction unit and the at least one second unidirectional electrostatic conduction unit are respectively located on both sides of the signal line in an extension direction parallel to the surface of the substrate and perpendicular to the signal line.

5. The ultrasound imaging device according to any one of claims 2 to 4, wherein, The unidirectional electrostatic conduction unit includes one unidirectional electrostatic conduction subunit or multiple unidirectional electrostatic conduction subunits connected in parallel.

6. The ultrasound imaging device according to claim 5, wherein, Multiple parallel unidirectional electrostatic conduction subunits are arranged sequentially along the extension direction of the signal line.

7. The ultrasound imaging apparatus according to claim 5 or 6, wherein, The unidirectional electrostatic conduction subunit includes a first pole and a second pole. The signal line is electrically connected to the first pole of the unidirectional electrostatic conduction subunit in the first unidirectional electrostatic conduction unit, and the first electrostatic discharge terminal is electrically connected to the second pole of the unidirectional electrostatic conduction subunit in the first unidirectional electrostatic conduction unit.

8. The ultrasound imaging apparatus according to any one of claims 5 to 7, wherein, The unidirectional electrostatic conduction subunit includes a first pole and a second pole. The signal line is electrically connected to the second pole of the unidirectional electrostatic conduction subunit in the second unidirectional electrostatic conduction unit, and the second electrostatic discharge terminal is electrically connected to the first pole of the unidirectional electrostatic conduction subunit in the second unidirectional electrostatic conduction unit.

9. The ultrasound imaging apparatus according to claim 7 or 8, wherein, The first poles of the multiple parallel unidirectional electrostatic conduction subunits are arranged sequentially along the extension direction of the signal line, and the second poles of the multiple parallel unidirectional electrostatic conduction subunits are arranged sequentially along the extension direction of the signal line. In at least a portion of the unidirectional electrostatic conduction units, the first poles of multiple parallel unidirectional electrostatic conduction subunits are integrally connected, and / or, the second poles of multiple parallel unidirectional electrostatic conduction subunits are integrally connected.

10. The ultrasound imaging apparatus according to any one of claims 7 to 9, wherein, The unidirectional electrostatic conduction subunit further includes a third electrode electrically connected to the first electrode or the second electrode.

11. The ultrasound imaging apparatus according to claim 10, wherein, The third poles of the multiple parallel unidirectional electrostatic conduction subunits are arranged sequentially along the extension direction of the signal line and are integrally connected.

12. The ultrasound imaging apparatus according to any one of claims 5 to 11, wherein, The unidirectional electrostatic conduction subunit is a switching transistor; The switching transistor further includes: a first active layer; the first electrode and the second electrode are located on the side of the first active layer away from the substrate; the first active layer includes: a first doped region, a channel region, and a second doped region; the first electrode is electrically connected to the first doped region, and the second electrode is electrically connected to the second doped region; The unidirectional electrostatic conduction subunit further includes a third electrode, which is located between the first electrode, the second electrode, and the first active layer.

13. The ultrasound imaging device according to claim 12, wherein, The first doped region, the channel region, and the second doped region in the first active layer are arranged sequentially in the direction from the second unidirectional electrostatic conduction unit to the first unidirectional electrostatic conduction unit, and the first electrode and the second electrode are arranged in the direction from the second unidirectional electrostatic conduction unit to the first unidirectional electrostatic conduction unit.

14. The ultrasound imaging apparatus according to claim 12 or 13, wherein, The first electrode and the second electrode are disposed in the same layer on the side of the first active layer away from the substrate. Multiple unidirectional electrostatic conduction units are connected in series between the signal line and the first electrostatic discharge terminal and / or between the signal line and the second electrostatic discharge terminal. In any two unidirectional electrostatic conduction units connected in series between the signal line and the first electrostatic discharge terminal and / or between the signal line and the second electrostatic discharge terminal, the second doped region of one of the unidirectional electrostatic conduction units is adjacent to the first doped region of the other unidirectional electrostatic conduction unit, and the second electrode of one of the unidirectional electrostatic conduction units is integrally connected to the first electrode of the other unidirectional electrostatic conduction unit.

15. The ultrasound imaging apparatus according to any one of claims 7 to 12, wherein, The first electrode, the second electrode, and the signal line are arranged in the same layer; The signal line and its electrically connected first and second poles are integrally connected.

16. The ultrasound imaging apparatus according to any one of claims 12 to 15, wherein, The switching transistor is a PIN diode; or... The switching transistor is a thin-film transistor; one of the first electrode and the second electrode is a first drain, and the other of the first electrode and the second electrode is a first source; the thin-film transistor also includes a third electrode electrically connected to the first source.

17. The ultrasound imaging apparatus according to claim 16, wherein, The electrostatic discharge protection circuit includes N-type thin-film transistors; the first electrode is the first source, and the second electrode is the first drain; or... All the thin-film transistors included in the electrostatic discharge protection circuit are P-type thin-film transistors; the first electrode is the first drain, and the second electrode is the first source.

18. The ultrasound imaging apparatus according to any one of claims 2 to 17, wherein, The ultrasound imaging device further includes: a first electrostatic discharge signal line electrically connected to the first electrostatic discharge terminal, and a second electrostatic discharge signal line electrically connected to the second electrostatic discharge terminal; At least a portion of the first electrostatic discharge terminals of the electrostatic protection circuits are electrically connected to the same first electrostatic discharge signal line, and at least a portion of the second electrostatic discharge terminals of the electrostatic protection circuits are electrically connected to the same second electrostatic discharge signal line.

19. The ultrasound imaging apparatus according to claim 18, wherein, The extension directions of the first electrostatic discharge signal line and the second electrostatic discharge signal line intersect with the extension direction of the signal line; The first electrostatic discharge signal line and the second electrostatic discharge signal line are located on different layers from the signal line; The unidirectional electrostatic conduction unit is located in the orthographic projection of the substrate between the orthographic projection of the first electrostatic discharge signal line and the orthographic projection of the second electrostatic discharge signal line on the substrate.

20. The ultrasound imaging apparatus according to any one of claims 1 to 19, wherein, The surrounding area includes: a binding area located on one side of the functional area in a first direction; In the area between the binding area and the functional area, the plurality of signal lines are arranged along the second direction. The column, the second direction intersects the first direction; The surrounding area further includes: a first sub-region located on the side of the binding area facing the functional area in the first direction, and a second sub-region located on the side of the first sub-region facing the functional area in the first direction; A portion of the multiple signal lines includes: a first portion extending along the first direction; the orthographic projection of the first portion onto the substrate falls into the first sub-region and the bonding region, and one end of the first portion away from the functional region is electrically connected to the third bonding electrode; A portion of the plurality of signal lines includes: a second portion, the second portion of which, when projected onto the substrate, falls into the second sub-region; at least a portion of the second portion of the signal line extends along a third direction; the third direction intersects both the first direction and the second direction; A portion of the multiple signal lines includes: a third portion located on the side of the functional area away from the binding area and extending along the first direction; At least one of the first part, the second part, and the third part is electrically connected to the electrostatic protection circuit.

Images