Quantum dot post-processing method and application of composite photovoltaic synergistic film of quantum dot post-processing method

Abstract

The invention discloses a quantum dot post-processing method and application of a composite photovoltaic synergistic film of the quantum dot post-processing method, and belongs to the field of composite optical films and photovoltaic technologies. Preparing a perovskite quantum dot solution; sequentially adding the quantum dot protective layer precursor solution and the ionic surfactant solution into the perovskite quantum dot solution, and performing post-treatment; adding a polymer solution into the post-treated solution, and uniformly mixing to obtain a uniformly dispersed perovskite quantum dot-polymer mixed solution; the mixed solution is prepared into a thin film which can be used as a photovoltaic synergistic film. A protective layer is constructed on the surface of the quantum dot in situ, and the dispersity and the stability of the quantum dot in a polymer matrix are enhanced by using an ionic surfactant, so that the problems that the perovskite quantum dot is easily eroded by the environment and is easily aggregated and failed are successfully solved. The composite film prepared by the process is strong in weather resistance and high in quantum dot utilization rate, is applied to the surface of a solar cell, can effectively realize photon wavelength conversion, and improves the photoelectric conversion efficiency of the cell.

Description

Technical Field

[0001] This invention relates to the field of composite optical films and photovoltaic devices, specifically to a quantum dot post-processing method and its application in composite photovoltaic enhancement films. Background Technology

[0002] Perovskite quantum dots (PDOs) exhibit great application potential in light-emitting diodes (LEDs), displays, and photovoltaics due to their excellent photoelectric properties (such as high photoluminescence quantum yield, tunable emission wavelength, and narrow full width at half maximum). In the photovoltaic field, utilizing the downconversion or upconversion luminescence effect of PDOs to convert photons in the solar spectrum with poor cell response into photons in the cell's optimal response band is an effective optical management strategy for improving photovoltaic cell efficiency.

[0003] However, the inherent ionic crystal properties of perovskite quantum dots make them extremely sensitive to water, oxygen, heat, and light, resulting in poor stability and severely limiting their practical applications. Furthermore, quantum dots are prone to aggregation in polymer matrices due to their high surface energy, leading to luminescence quenching and performance degradation. Currently, common methods to improve their stability include surface ligand engineering, inorganic shell coating, and encapsulation within polymer or glass matrices. For example, Chinese patent CN120966473A discloses the use of CdS to coat perovskite quantum dots to improve stability; however, this method is complex and does not address the issues of quantum dot-polymer composites and their dispersion within polymers. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this paper provides a quantum dot post-processing method and its application in composite photovoltaic enhancement films. This method effectively overcomes the defects of poor stability of perovskite quantum dots, easy aggregation in polymer matrices, and complex preparation processes of corresponding composite films. The method is simple and efficient, and the prepared perovskite quantum dot-polymer composite films have high weather resistance and high uniformity.

[0005] To achieve the above objectives, the present invention adopts the following technical solution:

[0006] A quantum dot post-processing method for treating a perovskite quantum dot-polymer mixed solution includes the following steps:

[0007] S1. Preparation of perovskite quantum dot solution;

[0008] S2. A quantum dot protective layer precursor solution and an ionic surfactant solution are sequentially added to the perovskite quantum dot solution for post-treatment. The ionic surfactant solution can generate a strong charge on the surface of the quantum dots, without destroying the existing protective layer, while avoiding quantum dot aggregation and improving the dispersibility of quantum dots in the polymer. The mass ratio of perovskite quantum dots, quantum dot protective layer precursor, and ionic surfactant is 1:(0.1~1):(0.01~0.1).

[0009] S3. Add the polymer solution to the post-treated solution and mix well to obtain a uniformly dispersed perovskite quantum dot-polymer mixed solution; the mass ratio of perovskite quantum dots to polymer is 1:(0.1~10).

[0010] Furthermore, the solvent for the perovskite quantum dot solution is thiol or toluene, and the concentration of the perovskite quantum dots is 1 mg / mL to 10 mg / mL; the solvent for the quantum dot protective layer precursor solution is thiol, and the concentration of the quantum dot protective layer precursor is 0.01-0.05 g / mL; the solvent for the ionic surfactant solution is thiol, and the concentration of the ionic surfactant is 0.01-0.1 g / mL; the solvent for the polymer solution is thiol, and the concentration of the polymer is 0.05 g / mL to 0.2 g / mL.

[0011] Furthermore, the perovskite quantum dot solution is specifically a mixture of A-site precursor solution, B-site precursor solution, and X-site precursor solution of perovskite quantum dots; the components of the perovskite quantum dots include , , , , , or It is composed of one or more of the following, where n≥2; A includes , , , , , , , It may be composed of one or more organic amine cations having not less than 3 carbon atoms; the B site includes , , , , , , , , , , , , , , , , or It is composed of one or more of the following; the X position includes , , or It is a mixture of one or more of the following.

[0012] Furthermore, the precursor in the quantum dot protective layer precursor solution includes one or more of the following: 3-aminopropyltriethoxysilane, tetraethoxysilane, methyltrimethoxysilane, vinyltriethoxysilane, mercaptopropyltrimethoxysilane, 3-epoxypropoxypropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, octyltriethoxysilane, dodecyltrimethoxysilane, phenyltrimethoxysilane, 3-isocyanatepropyltriethoxysilane, trimethylaluminum, and diethylzinc; the protective layer includes , , It is composed of one or more of the following: quantum dot protective layer precursor is the original material for producing the protective layer.

[0013] Furthermore, the ionic surfactant is selected from one or more of the following: dodecylbenzenesulfonic acid, calcium dodecylbenzenesulfonate, sodium bis(2-ethylhexyl)sulfosuccinate, bis(octadecyldimethylammonium chloride), aluminum stearate, or barium dinonylnaphthalenesulfonate.

[0014] Furthermore, the polymer includes one or more of the following: ethylene-vinyl acetate copolymer, polymethyl methacrylate, ethylene propylene rubber, and ethylene-octene copolymer.

[0015] A perovskite quantum dot-polymer mixed solution prepared using a quantum dot post-processing method is disclosed, wherein a quantum dot protective layer precursor forms a protective layer in situ on the surface of the quantum dots, and an ionic surfactant improves the dispersibility of the quantum dots in the polymer matrix.

[0016] A composite photovoltaic enhancement film generated from a perovskite quantum dot-polymer mixed solution is disclosed. The perovskite quantum dot-polymer mixed solution is coated onto the surface of a solar cell using a blade coating method. After drying, a uniform composite photovoltaic enhancement film is formed on the surface of the solar cell. The composite photovoltaic enhancement film includes perovskite quantum dots, a quantum dot protective layer and an ionic surfactant sequentially coated around the quantum dots, and the quantum dots, protective layer and ionic surfactant are dispersed together in a polymer matrix.

[0017] A photovoltaic device has a perovskite quantum dot-polymer composite photovoltaic enhancement film disposed on its surface as an enhancement layer; the photovoltaic device is a crystalline silicon solar cell, a compound solar cell, a perovskite solar cell, an organic solar cell, or a polymer solar cell.

[0018] The core concept of this invention lies in organically combining "surface protection" and "dispersion stabilization" through a specific post-processing sequence. First, a quantum dot protective layer precursor (such as a silane coupling agent) is hydrolyzed and condensed on the quantum dot surface to form a dense inorganic / organic hybrid protective layer in situ. This layer effectively isolates water and oxygen from direct contact, significantly improving the intrinsic stability of the quantum dots. Subsequently, an ionic surfactant is immediately introduced. Its hydrophilic groups are anchored to the surface of the quantum dots coated with the protective layer through electrostatic or coordination interactions, while the hydrophobic long chains extend outwards. When the polymer solution is finally added, these quantum dots modified with the ionic surfactant, due to their good compatibility with the polymer chain segments, can greatly inhibit aggregation and achieve uniform dispersion at the nanoscale. This process cleverly links the construction of the protective layer with dispersion modification in one step, eliminating the time-consuming centrifugation and purification steps of traditional processes, thus improving yield and reducing costs.

[0019] Beneficial effects:

[0020] 1. The introduction of ionic surfactants significantly improves the interfacial compatibility of quantum dots in polymer matrix, effectively prevents agglomeration during film formation, obtains highly uniform composite films, and ensures the consistency of optical performance.

[0021] 2. A quantum dot protective layer precursor solution and an ionic surfactant solution are sequentially added to the perovskite quantum dot solution for post-treatment. This process avoids disrupting the formation of the existing protective layer and prevents quantum dot aggregation, thereby improving the dispersibility of quantum dots in the polymer. Then, a polymer solution is added to obtain a uniformly dispersed perovskite quantum dot-polymer mixed solution. This integrates the three steps of protection, dispersion, and composite into a single post-treatment step, resulting in a streamlined process that eliminates the need for complex purification steps such as centrifugation and washing. This approach is suitable for large-scale production and yields high quantum dot utilization.

[0022] 3. A thin film was made from a perovskite quantum dot-polymer mixed solution. When this composite film was applied to a photovoltaic cell, it could effectively manage the incident light spectrum. Experiments showed that it could increase the absolute value of the photoelectric conversion efficiency of crystalline silicon cells by more than 1%, which was a significant effect.

[0023] This invention successfully solves the problems of perovskite quantum dots' susceptibility to environmental corrosion and easy aggregation failure by constructing a protective layer on the surface of quantum dots in situ and utilizing ionic surfactants to enhance their dispersibility and stability in a polymer matrix. The process is simple, requires no centrifugal purification, and the resulting composite film exhibits strong weather resistance and high quantum dot utilization. Applying it to the surfaces of crystalline silicon, perovskite, and other solar cells can effectively achieve photon wavelength conversion and improve the photoelectric conversion efficiency of the cells. Attached Figure Description

[0024] Figure 1 The XRD pattern of the quantum dots prepared in Example 1 of this invention.

[0025] Figure 2 The XRD pattern of the quantum dots prepared in Example 2 of this invention.

[0026] Figure 3 The XRD pattern of the quantum dots prepared in Example 3 of this invention.

[0027] Figure 4 This is a SEM image of the perovskite quantum dot-polymer composite film prepared in Example 1 of the present invention.

[0028] Figure 5 This is a SEM image of the perovskite quantum dot-polymer composite film prepared in Example 2 of the present invention.

[0029] Figure 6 This is a SEM image of the perovskite quantum dot-polymer composite film prepared in Example 3 of the present invention.

[0030] Figure 7 Prepared for Comparative Example 4 TEM image of a quantum dot-polymer composite film.

[0031] Figure 8 The preparation of the present invention as described in Example 1 TEM image of a quantum dot-polymer composite film.

[0032] Figure 9 The preparation of Example 2 of the present invention TEM image of a quantum dot-polymer composite film.

[0033] Figure 10 The sample prepared in Example 3 of this invention TEM image of a quantum dot-polymer composite film.

[0034] Figure 11 The PL images are of the composite film prepared in Comparative Example 3 before and after high-temperature heating.

[0035] Figure 12The PL images are of the composite film prepared in Comparative Example 4 before and after high-temperature heating.

[0036] Figure 13 The image shows the PL (photometer) pattern of the composite film prepared in Example 1 of this invention before and after high-temperature heating.

[0037] Figure 14 The image shows the PL (photometer) pattern of the composite film prepared in Example 2 of this invention before and after high-temperature heating.

[0038] Figure 15 The image shows the PL (photometer) pattern of the composite film prepared in Example 3 of this invention before and after high-temperature heating.

[0039] Figure 16 The image shows the IV characteristic curves of crystalline silicon solar cells based on different composite thin films. Detailed Implementation

[0040] The present invention will now be described in detail with reference to the accompanying drawings and specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention.

[0041] Example 1: Preparation of composite thin films and their application in crystalline silicon solar cells:

[0042] Step (1) Preparation of Cs precursor solution: Weigh 0.0407g (A-site precursor) was dissolved in 2 mL of oleic acid under heating and stirring.

[0043] Step (2) Preparation of Pb and Br precursor solution: Weigh 0.0294g (B- and X-position precursors) and 0.0628 g of tetraheptylammonium bromide (ligand and X-position precursor) were dissolved in 8 mL of 1,2,4-trimethylbenzene. Then, 80 μL of oleic acid and 80 μL of octylamine were added as co-solvents. The mixture was stirred at 70 °C and 500 rpm until completely dissolved.

[0044] Step (3) Quantum dot synthesis and post-processing: Take 200 μL of the Cs precursor solution from step (1) and inject it into 2 mL of the Pb and Br precursor solution from step (2); stir the reaction at 70℃ and 500 rpm for 2 hours to obtain... Perovskite quantum dot solution; then, 100 μL of 3-aminopropyltriethoxysilane (APTES, protective layer precursor, forming SiO2 protective layer) solution was added sequentially, and stirred for 1 hour; then 20 μL of dodecylbenzenesulfonic acid (DBSA, ionic surfactant) solution was added, and stirred for 1 hour to obtain the post-treatment solution.

[0045] Step (4) Polymer Composite: Add 2 mL of 0.15 g / mL EVA / trimethylbenzene solution to the above post-treatment solution, and continue stirring to mix evenly to obtain... Quantum dot-polymer mixed solution.

[0046] Step (5) Film Formation and Application: Using a blade coating method, the film is formed and applied... A quantum dot-polymer mixed solution was coated onto the surface of a commercial polycrystalline silicon solar cell at a scraper speed of 0.2 cm / s; then dried at 80°C for 10 minutes to remove the solvent, thus forming a uniform composite enhancement film on the cell surface.

[0047] Step (6) Performance test: Under standard test conditions (AM1.5G, 100mW / cm²), test the current-voltage IV characteristic curves of the battery before and after treatment.

[0048] Results and Analysis:

[0049] Structural characterization: such as Figure 1 As shown, the X-ray diffraction (XRD) pattern of the prepared quantum dots is similar to... The standard card (PDF#01-072-7929) is a perfect match, confirming the successful synthesis of pure-phase perovskite quantum dots. Figure 8 Transmission electron microscopy (TEM) images show that the quantum dots are uniform in size, approximately 5 nm.

[0050] Thin film morphology: Figure 4 The scanning electron microscope (SEM) images showed that the surface of the composite film was smooth and uniform, with no obvious quantum dot agglomerates or phase separation, confirming the excellent dispersion effect of the ionic surfactant.

[0051] Thermal stability: such as Figure 13 As shown, after heating the composite film prepared in Example 1 at a high temperature (85°C) for 1 hour, the intensity of its photoluminescence (fluorescence spectrum PL) only decreased slightly, and the peak position did not shift, indicating that the quantum dots maintained extremely high thermal stability under the synergistic effect of the protective layer and the ionic surfactant.

[0052] Photovoltaic performance: Device test results ( Figure 16 As shown in Table 1, after treatment with the composite film of the present invention, the photoelectric conversion efficiency (PCE) of the crystalline silicon cell increased from 15.57% in the control group to 16.78%, an absolute increase of 1.21%, mainly due to the significant increase in short-circuit current density (Jsc), which proves the effective photon management capability of the film.

[0053] Example 2: Preparation of composite thin films and their application in crystalline silicon solar cells:

[0054] In step (1) of perovskite quantum dot synthesis and post-processing, 2 μL of barium dinonylnaphthalenesulfonate (DINNS-Ba, ionic surfactant) was used instead of DBSA, and the other processes were the same as in Example 1.

[0055] Step (2), polymer composite, film formation and application, and performance testing are the same as in Example 1.

[0056] Results and Analysis:

[0057] Structural characterization: such as Figure 2 As shown, the XRD pattern of the prepared quantum dots is similar to... The standard card (PDF#01-072-7929) is a perfect match, confirming the successful synthesis of pure-phase perovskite quantum dots. Figure 9 TEM images show that the quantum dots are uniform in size, approximately 5 nm.

[0058] Thin film morphology: Figure 5 The SEM images show that the composite film surface is smooth and uniform, with no obvious quantum dot agglomerates or phase separation, confirming the excellent dispersion effect of the ionic surfactant.

[0059] Thermal stability: such as Figure 14 As shown, after heating the composite film prepared in Example 1 at a high temperature (85°C) for 1 hour, its photoluminescence (PL) intensity only decreased slightly and the peak position did not shift, indicating that the quantum dots maintained extremely high thermal stability under the synergistic effect of the protective layer and the ionic surfactant.

[0060] Photovoltaic performance: Device test results ( Figure 16 As shown in Table 1, after treatment with the composite film of the present invention, the photoelectric conversion efficiency (PCE) of the crystalline silicon cell increased from 15.57% in the control group to 16.79%, an absolute increase of 1.22%, mainly due to the significant improvement in short-circuit current density (Jsc) and fill factor, which proves the effective photon management capability of the film.

[0061] Example 3: Preparation of composite thin films and their application in crystalline silicon solar cells

[0062] In step (1) of perovskite quantum dot synthesis and post-processing, 2 μL of sodium bis(2-ethylhexyl)sulfosuccinate (AOT, ionic surfactant) was used to replace DBSA, and the other processes were the same as in Example 1.

[0063] Step (2) Polymer composite, film formation and application, and performance testing are the same as in Example 1.

[0064] Results and Analysis:

[0065] Structural characterization: such as Figure 3 As shown, the XRD pattern of the prepared quantum dots is similar to... The standard card (PDF#01-072-7929) showed a perfect match with no extraneous peaks, confirming the successful synthesis of pure-phase perovskite quantum dots. Figure 10 TEM images show that the quantum dots are uniform in size, approximately 5 nm, and have a regular crystal morphology. Thin film morphology: Figure 6 SEM images showed that the composite film surface was smooth and uniform, with no obvious quantum dot agglomerates or phase separation, confirming the excellent dispersion effect of the ionic surfactant (sodium bis(2-ethylhexyl)sulfosuccinate, AOT), which effectively improved the interfacial compatibility between quantum dots and the polymer matrix. Thermal stability: as shown. Figure 15 As shown, after heating the composite film prepared in Example 3 at a high temperature (85°C) for 1 hour, its photoluminescence (PL) intensity only decreased slightly, and the peak position did not shift, indicating that the quantum dots... The protective layer and the ionic surfactant AOT worked synergistically to maintain extremely high thermal stability. Photovoltaic performance: Device test results ( Figure 16 As shown in Table 1, after treatment with the composite film of the present invention, the photoelectric conversion efficiency (PCE) of the crystalline silicon cell increased from 15.57% in the control group (Comparative Example 1) to 16.61%, an absolute increase of 1.04%, mainly due to the significant increase in short-circuit current density (Jsc), which proves the effective photon management capability of the film.

[0066] Comparative Examples 1-4:

[0067] To verify the necessity of each component and technical step of the present invention, the following comparative examples were set up, and their performance is listed in the table below.

[0068] Comparative Example 1: Raw crystalline silicon solar cell without any treatment.

[0069] Comparative Example 2: EVA film and pure EVA film coated only on the surface of the battery (without quantum dots or any additives).

[0070] Comparative Example 3: When preparing the composite film, neither a protective layer precursor (such as APTES) nor an ionic surfactant was added; only quantum dots and EVA were mixed; and the corresponding film was coated on a crystalline silicon cell.

[0071] Comparative Example 4: When preparing the composite thin film, only a protective layer precursor (such as APTES) was added, without adding an ionic surfactant; and the corresponding thin film was coated on a crystalline silicon cell.

[0072] Table 1: Performance parameters of crystalline silicon solar cells under different treatment conditions .

[0073] in conclusion:

[0074] 1. Comparison between Comparative Example 3 and Example 1 (see Figure 11 vs Figure 13 The thin film lacking a protective layer and ionic surfactant has extremely poor thermal stability, and the PL strength drops sharply, resulting in limited improvement in device efficiency (only 0.49%).

[0075] 2. Comparison between Comparative Example 4 and Example 1 (see Figure 12 vs Figure 13 The film with only a protective layer and no ionic surfactant exhibited better thermal stability than Comparative Example 3 but worse than Example 1, and its device efficiency (16.38%) was also lower than that of the present invention (16.78%). This demonstrates that ionic surfactants are crucial for ensuring the uniformity of quantum dot dispersion, and thus for ensuring the optical quality of the film and the performance of the device.

[0076] 3. Comparison between Comparative Example 3 and Example 2 (see Figure 11 vs Figure 14 The thin film lacking a protective layer and ionic surfactant has extremely poor thermal stability, and the PL strength drops sharply, resulting in limited improvement in device efficiency (only 0.49%).

[0077] 4. Compare Comparative Example 4 and Example 2 (see Figure 12 vs Figure 14 The film with only a protective layer and no ionic surfactant exhibited better thermal stability than Comparative Example 3 but worse than Example 1, and its device efficiency (16.38%) was also lower than that of the present invention (16.79%). This demonstrates that ionic surfactants are crucial for ensuring the uniformity of quantum dot dispersion, and thus for ensuring the optical quality of the film and the performance of the device.

[0078] 5. Comparison between Comparative Example 3 and Example 3 (see Figure 11 vs Figure 15 The film lacking a protective layer and ionic surfactant still exhibits extremely poor thermal stability, with a significant decrease in photoluminescence (PL) intensity and a corresponding device efficiency improvement of only 0.49%. This further confirms the crucial role of the dual modification system in ensuring film stability and enhancing photovoltaic efficiency.

[0079] 6. Compare Comparative Example 4 and Example 3 (see Figure 12 vs Figure 15 The film with only a protective layer and no ionic surfactant, although having better thermal stability than Comparative Example 3, was significantly inferior to Example 3, and its device efficiency (16.38%) was lower than that of Example 3 (16.61%). This result further confirms that ionic surfactants can effectively maintain the uniformity of quantum dots dispersion in the polymer matrix, ensure the consistency of optical performance of composite films, and have irreplaceable significance for improving the photoelectric conversion efficiency of devices.

[0080] 7. As can be seen from the test results of Examples 1, 2 and 3, all three exhibit better device efficiency and thermal stability than the comparative examples, which fully demonstrates that the specific post-processing sequence of "first constructing a quantum dot protective layer and then introducing an ionic surfactant" has universality. The synergistic effect of the protective layer and the ionic surfactant is the core to achieve stable dispersion of quantum dots and optimization of composite film performance, and their synergistic cooperation is indispensable.

[0081] The above embodiments are merely preferred embodiments of the present invention, and the scope of protection of the present invention is not limited to the above embodiments. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A quantum dot post-processing method, characterized in that, Includes the following steps: S1. Preparation of perovskite quantum dot solution; S2. A quantum dot protective layer precursor solution and an ionic surfactant solution are sequentially added to the perovskite quantum dot solution for post-treatment. The ionic surfactant solution can generate a strong charge on the surface of the quantum dots, without destroying the existing protective layer, while avoiding quantum dot aggregation and improving the dispersibility of quantum dots in the polymer. The mass ratio of perovskite quantum dots, quantum dot protective layer precursor, and ionic surfactant is 1:(0.1~1):(0.01~0.1). S3. Add the polymer solution to the post-treated solution and mix well to obtain a uniformly dispersed perovskite quantum dot-polymer mixed solution; the mass ratio of perovskite quantum dots to polymer is 1:(0.1~10).

2. The quantum dot post-processing method according to claim 1, characterized in that, The solvent for the perovskite quantum dot solution is thiol or toluene, and the concentration of the perovskite quantum dots is 1~10 mg / mL; the solvent for the quantum dot protective layer precursor solution is thiol, and the concentration of the quantum dot protective layer precursor is 0.01-0.05 g / mL; the solvent for the ionic surfactant solution is thiol, and the concentration of the ionic surfactant is 0.01-0.1 g / mL; the solvent for the polymer solution is thiol, and the concentration of the polymer is 0.05-0.2 g / mL.

3. The quantum dot post-processing method according to claim 1, characterized in that, The perovskite quantum dot solution is specifically a mixture of A-site precursor solutions, B-site precursor solutions, and X-site precursor solutions of perovskite quantum dots; the components of the perovskite quantum dots include , , , , , or It is composed of one or more of the following, where n≥2; A includes , , , , , , , It may be composed of one or more organic amine cations having not less than 3 carbon atoms; the B site includes , , , , , , , , , , , , , , , , or It is composed of one or more of the following; the X position includes , , or It is a mixture of one or more of the following.

4. The quantum dot post-processing method according to claim 1, characterized in that, The precursors in the quantum dot protective layer precursor solution include one or more of the following: 3-aminopropyltriethoxysilane, tetraethoxysilane, methyltrimethoxysilane, vinyltriethoxysilane, mercaptopropyltrimethoxysilane, 3-epoxypropoxypropyltrimethoxysilane, N-(2-aminoethyl)-3-aminopropyltrimethoxysilane, octyltriethoxysilane, dodecyltrimethoxysilane, phenyltrimethoxysilane, 3-isocyanatepropyltriethoxysilane, trimethylaluminum, and diethylzinc; the protective layer includes... , , It is composed of one or more of the following: quantum dot protective layer precursor is the original material for producing the protective layer.

5. The quantum dot post-processing method according to claim 1, characterized in that, The ionic surfactant is selected from one or more of the following: dodecylbenzenesulfonic acid, calcium dodecylbenzenesulfonate, sodium bis(2-ethylhexyl)sulfosuccinate, bis(octadecyldimethylammonium chloride), aluminum stearate, or barium dinonylnaphthalenesulfonate.

6. The quantum dot post-processing method according to claim 1, characterized in that, The polymers include one or more of the following: ethylene-vinyl acetate copolymer, polymethyl methacrylate, ethylene propylene rubber, and ethylene-octene copolymer.

7. A perovskite quantum dot-polymer mixed solution prepared using any one of the quantum dot post-processing methods of claims 1-6, characterized in that, The quantum dot protective layer precursor forms a protective layer in situ on the surface of the quantum dots, and the ionic surfactant improves the dispersibility of the quantum dots in the polymer matrix.

8. A composite photovoltaic enhancement film generated from the perovskite quantum dot-polymer mixed solution according to claim 7, characterized in that, A perovskite quantum dot-polymer mixed solution is coated onto the surface of a solar cell using a blade coating method. After drying, a uniform composite photovoltaic enhancement film is formed on the surface of the solar cell. The composite photovoltaic enhancement film includes perovskite quantum dots, a quantum dot protective layer and an ionic surfactant sequentially coated around the quantum dots. The quantum dots, the protective layer and the ionic surfactant are dispersed together in a polymer matrix.

9. A photovoltaic device, characterized in that, Its surface is provided with the perovskite quantum dot-polymer composite photovoltaic enhancement film as described in claim 7 as an enhancement layer; the photovoltaic device is a crystalline silicon solar cell, a compound solar cell, a perovskite solar cell, an organic solar cell, or a polymer solar cell.

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