PCB manufacturing method, PCB processing system and PCB

Abstract

The invention relates to the technical field of printed circuit boards, and discloses a PCB manufacturing method, a PCB processing system and a PCB, and the PCB manufacturing method comprises the steps: providing a substrate which comprises a first conductive layer, a second conductive layer and an insulating layer; ablating the first conductive layer and the insulating layer by using a laser to obtain a first windowing hole formed in the first conductive layer and a connecting windowing hole formed in the insulating layer, and forming a conductive carbon net on the inner hole wall of the connecting windowing hole; conductive materials are arranged in the connecting windowing holes, and part of the conductive materials are doped into the conductive carbon net to form a conductive network; and electroplating the substrate through the conductive network to obtain an electroplated layer covering the conductive network. The manufacturing method of the PCB, the processing system of the PCB and the PCB provided by the invention are used for solving the problem that in the prior art, hole metallization is completed by adopting a wet process in which a black hole process is matched with chemical copper plating, and the pollution in the production process is relatively large.

Description

Technical Field

[0001] This application relates to the field of printed circuit board technology, and in particular to a PCB manufacturing method, a PCB processing system, and a PCB. Background Technology

[0002] Printed Circuit Boards (PCBs) are widely used in various fields as an important carrier for the electrical interconnection of electronic components. During PCB manufacturing, metallized vias are needed to connect different conductive layers. The metallization process typically involves first fabricating blind or through-holes, and then metallizing them.

[0003] In related technologies, a wet process combining black hole technology and chemical copper plating is generally used to complete hole metallization, which results in significant pollution during the production process. Summary of the Invention

[0004] This application provides a PCB manufacturing method, a PCB processing system, and a PCB, which solves the problem of significant pollution in the existing wet process of using black hole technology combined with chemical copper plating to complete hole metallization.

[0005] In a first aspect, embodiments of this application provide a method for manufacturing a PCB, comprising: A substrate is provided, the substrate comprising a first conductive layer and a second conductive layer stacked thereon, and an insulating layer located between the first conductive layer and the second conductive layer; A laser is used to ablate the first conductive layer and the insulating layer to obtain a first opening formed in the first conductive layer and a connecting opening formed in the insulating layer, and a conductive carbon mesh is formed on the inner wall of the connecting opening, and the first opening and the connecting opening are connected. Conductive material is disposed within the connecting window, and a portion of the conductive material is incorporated into the conductive carbon mesh to form a conductive network. Both the first conductive layer and the second conductive layer are connected to the conductive network. The substrate is electroplated through the conductive network to obtain an electroplated layer covering the conductive network.

[0006] In some embodiments, when the laser is used to ablate the first conductive layer and the insulating layer, a carbon-containing gas is introduced into the first opening.

[0007] In some embodiments, the carbon-containing gas is CH4 or C2H2.

[0008] In some embodiments, when the laser is used to ablate the first conductive layer and the insulating layer, an anti-oxidation gas is introduced into the first opening.

[0009] In some embodiments, the anti-oxidation gas is an inert gas and / or a reducing gas.

[0010] In some embodiments, the laser is a carbon dioxide laser, an ultraviolet laser, a blue laser, a green laser, or a near-infrared laser.

[0011] In some embodiments, conductive material is disposed within the connected opening by plasma sputtering or high-energy ion beam.

[0012] In some embodiments, the conductive material is deposited within the connection window via plasma sputtering, and during the plasma sputtering process, the vacuum level of the vacuum chamber is ≤5×10⁻⁶. -4 Pa, working gas is Ar and / or N2, working gas pressure is 0.3pa-2pa, sputtering power is 60W-150W.

[0013] In some embodiments, the conductive material is disposed within the connection window using a high-energy ion beam, wherein the vacuum level of the vacuum chamber is ≤1×10⁻⁶. -3 Pa, working air pressure is 0.1pa-0.5pa, injected energy is 400eV-700eV, and pulse frequency is 100Hz-300Hz.

[0014] In some embodiments, the conductive material is one or more of gold, copper, iron, silver, nickel, nitrogen, phosphorus, and carbon.

[0015] Secondly, embodiments of this application provide a PCB processing system for performing the PCB manufacturing method as described in the first aspect.

[0016] Thirdly, embodiments of this application provide a PCB, which is manufactured by the PCB manufacturing method described in the first aspect.

[0017] The PCB manufacturing method provided in this application has the following advantages: First, a laser is used to ablate the first conductive layer and the insulating layer to obtain a first opening formed in the first conductive layer and a connecting opening formed in the insulating layer. A conductive carbon mesh is formed on the inner wall of the connecting opening, connecting the first opening and the connecting opening. Then, conductive material is placed inside the connecting opening, with some conductive material incorporated into the conductive carbon mesh to form a conductive network. Both the first and second conductive layers are connected to the conductive network. Therefore, the substrate can be electroplated using the conductive network to obtain an electroplated layer covering the conductive network. The PCB manufacturing method provided in this application eliminates the use of chemical agents, avoids the generation of corrosive solutions and harmful gases, achieves green and environmentally friendly production, and solves the environmental pollution problems associated with traditional black hole processes and chemical copper plating processes.

[0018] The PCB processing system and the advantages of the PCB compared to the prior art provided in this application can be found in the description of the advantages compared to the prior art provided in this application, and will not be repeated here. Attached Figure Description

[0019] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a flowchart of a PCB fabrication method in one embodiment of this application. Figure 2 This is a schematic diagram of the substrate structure in one embodiment of this application; Figure 3 It uses laser ablation Figure 2 A schematic diagram of the first conductive layer and insulating layer of the substrate shown; Figure 4 yes Figure 3 A schematic diagram of the microstructure of the conductive carbon mesh formed on the inner wall of the connecting window hole of the insulating layer. Figure 5 Is Figure 4 The diagram shows a conductive material placed inside the connecting window, with some of the conductive material doped into the conductive carbon mesh to form a conductive network. Figure 6 yes Figure 5 A schematic diagram of the microstructure of the conductive network shown. Figure 7 pass Figure 5 The diagram shows a conductive network used for electroplating a substrate.

[0021] The markings in the diagram mean: 100. Substrate; 10. First conductive layer; 11. First window opening; 20. Second conductive layer; 21. Second window opening; 30. Insulation layer; 31. Connection window opening; 40. Conductive carbon mesh; 50. Conductive materials; 60. Conductive network; 70. Electroplating layer. Detailed Implementation

[0022] To make the objectives, technical solutions, and advantages of this application clearer, the following detailed description is provided in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of this application.

[0023] It should be noted that when a component is referred to as being "fixed to" or "set on" another component, it can be directly on or indirectly on that other component. When a component is referred to as being "connected to" another component, it can be directly connected to or indirectly connected to that other component.

[0024] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this application, "multiple" means two or more, unless otherwise explicitly specified.

[0025] In this specification, references to "one embodiment," "some embodiments," or simply "embodiment" mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. Furthermore, in one or more embodiments, specific features, structures, or characteristics may be combined in any suitable manner.

[0026] Printed Circuit Boards (PCBs) are widely used in various fields as an important carrier for the electrical interconnection of electronic components. During PCB manufacturing, metallized vias are needed to connect different conductive layers. The metallization process typically involves first fabricating blind or through-holes, and then metallizing them.

[0027] In related technologies, the current mainstream industry practice is to use a wet process system (a processing technology using liquid chemical agents) that combines black hole treatment (a process of chemically treating the hole walls to form a conductive layer) with electroless copper plating (a process of depositing a copper layer on the hole walls through a chemical reduction reaction) for hole metallization. This technology activates the hole walls with chemical agents under acidic or alkaline conditions, and then deposits an electroless copper layer as an electroplating substrate to facilitate subsequent electroplating. Although this process is highly mature, its technical principle dictates that it must rely on corrosive solutions (such as reducing agents like copper sulfate and formaldehyde) and strong acid / alkali media. The production process generates pollutants such as wastewater containing heavy metals and volatile organic compounds, posing environmental pollution problems.

[0028] In view of this, this application provides a PCB manufacturing method, a PCB processing system, and a PCB. The PCB manufacturing method provided by this application has the following advantages: First, a laser is used to ablate the first conductive layer and the insulating layer to obtain a first opening formed in the first conductive layer and a connecting opening formed in the insulating layer. A conductive carbon mesh is formed on the inner wall of the connecting opening, and the first opening and the connecting opening are connected. Then, conductive material is placed inside the connecting opening, with some conductive material doped into the conductive carbon mesh to form a conductive network. Both the first and second conductive layers are connected to the conductive network. Therefore, the substrate can be electroplated through the conductive network to obtain an electroplated layer covering the conductive network. The PCB manufacturing method provided by this application eliminates the use of chemical agents, avoids the generation of corrosive solutions and harmful gases, achieves green and environmentally friendly production, and solves the environmental pollution problems of traditional black hole processes and chemical copper plating processes.

[0029] To illustrate the technical solution of this application, the following description is provided in conjunction with specific accompanying drawings and embodiments.

[0030] Please refer to Figure 1 and Figure 2 In a first aspect, embodiments of this application provide a method for manufacturing a PCB, comprising: S100: A substrate 100 is provided, the substrate 100 including a first conductive layer 10 and a second conductive layer 20 stacked together, and an insulating layer 30 located between the first conductive layer 10 and the second conductive layer 20.

[0031] The first conductive layer 10 can be made of copper, gold, silver, tin, nickel, etc. The second conductive layer 20 can also be made of copper, gold, silver, tin, nickel, etc. The insulating layer 30, as a non-conductive material that isolates different conductive layers, can include flexible substrates, flexible stretchable substrates, or rigid substrates, such as PET (Polyethylene terephthalate), PVC (Polyvinyl chloride), PP (Polypropylene), PI (Polyimide), TPI (Thermoplastic polyimide), PTFE (Polytetrafluoroethylene), etc.

[0032] S200: Please refer to this as well. Figure 3 and Figure 4 A laser is used to ablate the first conductive layer 10 and the insulating layer 30 to obtain a first opening 11 formed in the first conductive layer 10 and a connecting opening 31 formed in the insulating layer 30, and to form a conductive carbon mesh 40 on the inner wall of the connecting opening 31, so that the first opening 11 and the connecting opening 31 are connected.

[0033] The laser can be a laser of various wavelengths, such as a carbon dioxide laser, an ultraviolet laser, a blue laser, a green laser, or a near-infrared laser. Under the laser's action, part of the first conductive layer 10 vaporizes to form the first window 11. The H (hydrogen), O (oxygen), and N (nitrogen) elements of the organic matter in the insulating layer 30 are released in vapor form, and the remaining carbon elements form a conductive carbon mesh 40 and attach to the remaining insulating layer 30, forming a microporous structure.

[0034] Understandably, in order for the insulating layer 30 to form a conductive carbon mesh 40, the energy density of the laser emitted by the laser needs to reach a specific threshold.

[0035] It should be noted that the laser scanning path of the laser can be planned according to the three-dimensional shape of the hole wall of the first window 11 and the connecting window 31 to ensure that each area inside the first window 11 and the connecting window 31 receives uniform energy input.

[0036] It is understandable that the first window 11 and the connecting window 31 can form a micro-blind hole, with conductive carbon mesh 40 provided on the bottom and side walls of the micro-blind hole. Alternatively, the laser can simultaneously ablate the second conductive layer 20 to obtain a second window 21 formed on the second conductive layer 20, with the first window 11, connecting window 31, and second window 21 forming a through hole. When multiple first window 11s and multiple connecting window 31s are provided, some of the first window 11s and some of the connecting window 31s correspond one-to-one to form blind holes, with conductive carbon mesh 40 provided on the side walls of the connecting window 31s and the bottom walls of the blind holes. Some of the first window 11s, some of the connecting window 31s, and multiple second window 21s correspond one-to-one to form through holes, with conductive carbon mesh 40 provided on the side walls of the connecting window 31s.

[0037] S300: Please refer to this as well. Figure 5 and Figure 6 Conductive material 50 is provided in the connecting window 31, and part of the conductive material 50 is doped into the conductive carbon mesh 40 to form a conductive network 60. The first conductive layer 10 and the second conductive layer 20 are both connected to the conductive network 60.

[0038] Conductive material 50 can be deposited within the first window 11 via plasma sputtering or high-energy ion beam. Upon high-speed collision with the conductive carbon mesh 40, the conductive material 50 will be incorporated into its surface and interior, thus modifying the material properties of the conductive carbon mesh 40. This modification of the conductive carbon mesh 40 cannot be achieved through coating, chemical vapor deposition, evaporation, or spraying processes. The conductive material 50 can be one or more of gold, copper, iron, silver, nickel, nitrogen, phosphorus, and carbon. The material of the conductive material 50 can be selected from different metals or non-metals according to the conductivity requirements.

[0039] It should be noted that the material selection of conductive material 50 can be determined according to the target conductivity requirements, among which copper is preferred due to its compatibility with subsequent electroplating processes.

[0040] Understandably, since the conductive carbon mesh 40 is an organic material, its structure has gaps, and its hardness and density are lower than those of the conductive layer. Therefore, the conductive material 50 is incorporated into its interior, altering the microstructure of the conductive carbon mesh 40. This helps to improve the conductivity and specific surface area of ​​the conductive network 60, thereby improving the efficiency and quality of subsequent electroplating. Because the first conductive layer 10 and the second conductive layer 20 have high density and hardness, the conductive material 50 on the first conductive layer 10 and the second conductive layer 20 will essentially only form a conductive thin film.

[0041] It should be noted that without the conductive material 50, it is difficult to form a continuous conductive network 60 as a conductive substrate, which cannot meet the stringent requirements of the subsequent electroplating process for the conductivity of the conductive substrate.

[0042] S400: Please refer to this as well. Figure 7 Electroplating is performed on the substrate 100 through the conductive network 60 to obtain an electroplated layer 70 covering the conductive network 60.

[0043] Since both the first conductive layer 10 and the second conductive layer 20 are connected to the conductive network 60, they are electrically connected through the conductive network 60. The electroplated layer 70 can fill the first opening 11, connect the opening 31 and the second opening 21, and partially cover the first conductive layer 10 and / or the second conductive layer 20. The first conductive layer 10 and the second conductive layer 20 are electrically connected through the conductive network 60 and the electroplated layer 70. The conductive network 60 and the electroplated layer 70 successfully bridge the conductive lines between the first conductive layer 10 and the second conductive layer 20, realizing interlayer electrical interconnection. Especially in high-density interconnection structures, it can reliably complete the metallization of micro-blind vias and through-holes, thereby constructing a complete, low-impedance three-dimensional conductive network 60, providing a solid foundation for subsequent pattern electroplating and final circuit functionality.

[0044] As can be seen from the above, the PCB manufacturing method provided in this application first uses a laser to ablate the first conductive layer 10 and the insulating layer 30 to obtain a first opening 11 formed in the first conductive layer 10 and a connecting opening 31 formed in the insulating layer 30, and forms a conductive carbon mesh 40 on the inner wall of the connecting opening 31. The first opening 11 and the connecting opening 31 are connected. Then, a conductive material 50 is placed in the connecting opening 31, and part of the conductive material 50 is doped into the conductive carbon mesh 40 to form a conductive network 60. The first conductive layer 10 and the second conductive layer 20 are both connected to the conductive network 60. Therefore, the substrate 100 can be electroplated through the conductive network 60 to obtain an electroplated layer 70 covering the conductive network 60. The PCB manufacturing method provided in this application eliminates the use of chemical agents, avoids the generation of corrosive solutions and harmful gases, realizes green and environmentally friendly production, and solves the environmental pollution problems of traditional black hole processes and chemical copper plating processes.

[0045] The PCB manufacturing method provided in this application addresses the dependence of chemical copper plating on strong acid / alkali media. By using laser activation of the porous conductive network 60 in synergy with physical modification, the porous conductive network 60 is directly constructed within the connection openings 31 of the insulating layer 30. This eliminates the need for corrosive chemical agents and avoids the use of liquid chemical reagents or aqueous solutions in material processing or manufacturing technology. It also avoids the generation of corrosive solutions and harmful gases, achieving a dry process for hole metallization. This green manufacturing process completes the pretreatment for hole metallization, enabling green and environmentally friendly production. At the same time, it completely replaces the traditional black hole and chemical copper deposition processes, reducing the number of PCB manufacturing steps, significantly improving production efficiency, and solving the technical problems of environmental pollution and complex processes associated with traditional black hole and chemical copper plating processes.

[0046] Please refer to Figure 3 and Figure 4 In some embodiments, the laser is a carbon dioxide laser, an ultraviolet laser, a blue laser, a green laser, or a near-infrared laser.

[0047] By adopting the above scheme, a first opening 11 formed on the first conductive layer 10 and a connection opening 31 formed on the insulating layer 30 can be obtained, and a conductive carbon mesh 40 is formed on the inner wall of the connection opening 31.

[0048] It is understandable that lasers of all wavelengths can activate porous conductive networks, but the conversion efficiency varies.

[0049] It should be noted that the process of ablating the insulating layer 30 using a laser can be considered the laser activation stage. This stage primarily utilizes lasers of various wavelengths as the main energy source. When using a carbon dioxide (CO2) laser, the wavelength range can be 10.6 μm. Since its laser effect is mainly photothermal rather than ablation, the laser energy density needs to reach the threshold required to activate the porous conductive carbon mesh 40. Controlled pyrolysis is achieved by precisely controlling the laser spot diameter, scanning speed, and power parameters. Precise control of the laser energy density ensures the quality of the porous conductive carbon mesh 40 formation, providing a reliable foundation for subsequent electroplating processes.

[0050] For laser parameter optimization, a model can be established to correlate energy density with the conversion rate of the porous conductive carbon mesh 40. Insufficient energy density will lead to incomplete carbonization, while excessive energy density will cause excessive ablation of the insulating layer 30. The optimal energy density window for a specific insulating layer 30 can be determined experimentally; this parameter is a function of the insulating layer 30 thickness, thermal conductivity, and laser absorptivity. A multi-pass overlapping scanning strategy can be adopted, with the first pass primarily activating the surface of the insulating layer 30 and the subsequent passes achieving the directional growth of the porous conductive carbon mesh 40.

[0051] Among them, by adjusting the synergistic effect of plasma doping concentration and laser process parameters, the lattice defect density and sp40 of porous conductive carbon mesh 40 are controlled. 2 The proportion of hybrid carbon (conductive graphitic carbon). Subsequent doping with a high concentration of conductive metallic material 50 and conductive carbon mesh 40 can form a nanoscale metal particle-porous conductive network 60 composite network, significantly improving interlayer conductivity.

[0052] For example, when the spot size of the CO2 laser emitted by a carbon dioxide laser is set to 50μm-100μm, the laser power to 10-15W, and the laser scanning speed to 300mm / s-500mm / s, its frequency is 20kHz-25kHz. If an ultraviolet laser is used as the main energy source, when the spot size of the ultraviolet laser is set to 10μm-50μm, the laser power to 2W-4W, and the laser scanning speed to 100mm / s-400mm / s, the frequency is 100kHz-200kHz. Furthermore, lasers of different wavelengths, such as blue light emitted by a blue laser (wavelength 455nm), green light emitted by a green laser (wavelength 532nm), and near-infrared light emitted by a near-infrared laser (wavelength 1064nm), can activate different insulating layers 30 to obtain connection openings 31 formed in the insulating layer 30, and to form a conductive carbon mesh 40 on the inner wall of the connection openings 31.

[0053] Optionally, when using a laser to ablate the first conductive layer 10 and the insulating layer 30, a carbon-containing gas is introduced into the first opening 11.

[0054] This setup allows carbon-containing gas to decompose into active carbon atoms under the high temperature of the laser, providing an active carbon source to replenish the forming conductive carbon mesh 40, promoting the growth of the porous conductive carbon mesh 40, increasing the yield of the conductive carbon mesh 40, and making the conductive carbon mesh 40 more continuous, denser, and more conductive.

[0055] It is understandable that the carbon-containing components in the carbon-containing gas environment undergo pyrolysis under laser pyrolysis, and the resulting active carbon atoms insert into the lattice of the porous conductive carbon mesh 40, improving the connectivity of its three-dimensional conductive network 60.

[0056] As a possible implementation method, the carbon-containing gas is CH4 or C2H2.

[0057] This setup allows carbon-containing gases to decompose into active carbon atoms under the high temperature of a laser.

[0058] Optionally, when using a laser to ablate the first conductive layer 10 and the insulating layer 30, an anti-oxidation gas is introduced into the first window 11.

[0059] This design prevents the carbon elements in the insulating layer 30 from being oxidized and burned into carbon dioxide when they encounter oxygen at high temperatures, thus preventing the formation of the conductive carbon mesh 40.

[0060] As a possible approach, the anti-oxidation gas is an inert gas and / or a reducing gas.

[0061] This design better prevents the carbon elements in the insulation layer 30 from being oxidized at high temperatures.

[0062] It should be noted that the composite gas environment design, which combines inert gas protection with reducing reactive gas regulation, effectively suppresses oxidation side reactions during laser processing, solving the process control challenge of simultaneously achieving uniformity and stability of the electro-carbon material. The carbon-containing gas, inert gas protection, and reducing reactive gas can also be used as cooling gases to adjust the heat conduction rate and control the reaction temperature field when the laser ablates the first conductive layer 10 and the insulating layer 30. The different types and ratios of the carbon-containing gas, inert gas, and reducing reactive gas can be adjusted according to specific process conditions.

[0063] For example, the inert gas can be Ar, N2, etc. The reducing gas can be H2, NH3, etc.

[0064] Please refer to Figure 5 and Figure 6 In some embodiments, conductive material 50 is disposed within the connection opening 31 by plasma sputtering or high-energy ion beam.

[0065] By adopting the above scheme, some conductive material 50 can be incorporated into the conductive carbon mesh 40 to form a conductive network 60, ensuring that the conductive network 60 has good conductivity and meets the requirements of subsequent electroplating.

[0066] When conductive material 50 is placed inside the connecting window 31 by plasma sputtering, a high-purity copper plate can be used as the target material, and the vacuum degree of the plasma sputtering equipment is ≤5×10⁻⁶. -4 The pressure is 0.3 Pa to 2 Pa to ensure no oxygen or moisture contaminates the PCB. The working gas uses Ar and / or N2 at a pressure of 0.3 Pa to 2 Pa. Lower pressures (e.g., 0.3 Pa to 1 Pa) are beneficial for increasing the density of the conductive material 50 film, while slightly higher pressures (1 Pa to 2 Pa) enhance plasma density and improve the uniformity of coverage on the inner wall of the connecting window 31. The plasma sputtering power is 60 W to 150 W, adjusted according to the aperture and depth of the first window 11 and the connecting window 31, as well as the thickness of the deposited conductive material 50. The distance between the target and the substrate 100 (50 mm to 80 mm) and the sputtering time will also be adjusted according to specific circumstances.

[0067] When conductive material 50 is placed within the connecting window 31 using a high-energy plasma beam (a high-energy ion stream used for material modification and doping), the generated high-ionization copper (Cu) plasma, under sample bias, can achieve more directional deposition, significantly improving the coverage of the bottom and sidewalls of the connecting window 31. The vacuum level of the high-energy plasma beam equipment is ≤1×10⁻⁶. -3 The working pressure is 0.1 Pa to 0.5 Pa, and the implantation energy is 400 eV to 700 eV. Low-energy activated copper ions cannot overcome the surface barrier to enter the lattice of the insulating layer 30 and will only adsorb on its surface. High-energy activated copper ions will subsequently embed into the conductive carbon network 40 (LIG, Laser-Induced Graphene) formed by the insulating layer 30, and can be better combined to form a conductive network 60. The pulse frequency of the high-energy plasma beam is 100 Hz to 300 Hz to control the interval of copper ion implantation. Its sputtering time can be adjusted according to different actual conditions.

[0068] Optionally, the conductive material 50 is made of one or more of the following: gold (Au), copper (Cu), iron (Fe), silver (Ag), nickel (Ni), nitrogen (N), phosphorus (P), and carbon (C).

[0069] With this setup, the conductive material 50 will be incorporated into the surface and interior of the conductive carbon mesh 40 after it collides at high speed.

[0070] The PCB manufacturing method provided in this application involves using high-energy-density laser irradiation to induce a carbonization reaction on the surface of the insulating layer 30, generating a conductive carbon mesh 40. Simultaneously, plasma doping or gas-assisted technology is used to enhance the conductivity of the porous conductive network 60, ultimately forming a conductive network 60 that can be directly electroplated. This method completely abandons traditional wet chemical processes, achieving a dry process for hole metallization. Furthermore, it integrates and innovates technologies, organically combining independent technologies such as laser processing and plasma treatment, and systematically combining laser-activated carbon mesh technology with material modification technology, achieving synergistic effects in the PCB field.

[0071] Compared with traditional processes, this application innovatively integrates plasma doping technology with laser-activated carbon mesh. The precise matching of laser parameters and gas environment ensures the controllability of the quality of the porous conductive network 60. The synergistic effect of the two technologies improves the conversion efficiency of the insulating layer 30 to the conductive network 60 to the industrial-grade requirement that it can be directly electroplated.

[0072] Secondly, embodiments of this application provide a PCB processing system for performing the PCB manufacturing method as described in the first aspect.

[0073] The PCB manufacturing system provided in this application first uses a laser to ablate the first conductive layer 10 and the insulating layer 30 to obtain a first opening 11 formed in the first conductive layer 10 and a connecting opening 31 formed in the insulating layer 30. A conductive carbon mesh 40 is formed on the inner wall of the connecting opening 31, and the first opening 11 and the connecting opening 31 are connected. Then, a conductive material 50 is placed inside the connecting opening 31, with some of the conductive material 50 incorporated into the conductive carbon mesh 40 to form a conductive network 60. Both the first conductive layer 10 and the second conductive layer 20 are connected to the conductive network 60. Therefore, the substrate 100 can be electroplated through the conductive network 60 to obtain an electroplated layer 70 covering the conductive network 60. The PCB manufacturing method provided in this application eliminates the use of chemical agents, avoids the generation of corrosive solutions and harmful gases, achieves green and environmentally friendly production, and solves the environmental pollution problems associated with traditional black hole processes and chemical copper plating processes.

[0074] Thirdly, embodiments of this application provide a PCB, which is manufactured by the PCB manufacturing method of the first aspect.

[0075] The PCB provided in this application embodiment first uses a laser to ablate the first conductive layer 10 and the insulating layer 30 during manufacturing to obtain a first opening 11 formed in the first conductive layer 10 and a connecting opening 31 formed in the insulating layer 30. A conductive carbon mesh 40 is formed on the inner wall of the connecting opening 31, and the first opening 11 and the connecting opening 31 are connected. Then, a conductive material 50 is placed inside the connecting opening 31, with some of the conductive material 50 incorporated into the conductive carbon mesh 40 to form a conductive network 60. Both the first conductive layer 10 and the second conductive layer 20 are connected to the conductive network 60. Therefore, the substrate 100 can be electroplated through the conductive network 60 to obtain an electroplated layer 70 covering the conductive network 60. The PCB manufacturing method provided in this application embodiment eliminates the use of chemical agents, avoids the generation of corrosive solutions and harmful gases, achieves green and environmentally friendly production, and solves the environmental pollution problems associated with traditional black hole processes and chemical copper plating processes.

[0076] It should be noted that the PCB provided in this application embodiment serves as a support for electronic components and a carrier for electrical connections, and can be a rigid board or a flexible board.

[0077] The above embodiments are only used to illustrate the technical solutions of this application, and are not intended to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this application, and should all be included within the protection scope of this application.

Claims

1. A method for manufacturing a PCB, characterized in that, include: A substrate is provided, the substrate comprising a first conductive layer and a second conductive layer stacked thereon, and an insulating layer located between the first conductive layer and the second conductive layer; A laser is used to ablate the first conductive layer and the insulating layer to obtain a first opening formed in the first conductive layer and a connecting opening formed in the insulating layer, and a conductive carbon mesh is formed on the inner wall of the connecting opening, and the first opening and the connecting opening are connected. Conductive material is disposed within the connecting window, and a portion of the conductive material is incorporated into the conductive carbon mesh to form a conductive network. Both the first conductive layer and the second conductive layer are connected to the conductive network. The substrate is electroplated through the conductive network to obtain an electroplated layer covering the conductive network.

2. The PCB manufacturing method according to claim 1, characterized in that, When the laser is used to ablate the first conductive layer and the insulating layer, carbon-containing gas is introduced into the first window.

3. The PCB manufacturing method according to claim 2, characterized in that, The carbon-containing gas is CH4 or C2H2.

4. The PCB manufacturing method according to claim 1, characterized in that, When using a laser to ablate the first conductive layer and the insulating layer, an anti-oxidation gas is introduced into the first window.

5. The PCB manufacturing method according to claim 4, characterized in that, The anti-oxidation gas is an inert gas and / or a reducing gas.

6. The PCB manufacturing method according to claim 1, characterized in that, The laser is a carbon dioxide laser, an ultraviolet laser, a blue laser, a green laser, or a near-infrared laser.

7. The method for manufacturing a PCB according to any one of claims 1 to 6, characterized in that, Conductive material is placed inside the connection window by plasma sputtering or high-energy ion beam.

8. The PCB manufacturing method according to claim 7, characterized in that, The conductive material is deposited within the connecting window via plasma sputtering, and during the plasma sputtering process, the vacuum level of the vacuum chamber is ≤5×10⁻⁶. -4 Pa, working gas is Ar and / or N2, working gas pressure is 0.3pa-2pa, sputtering power is 60W-150W.

9. The PCB manufacturing method according to claim 7, characterized in that, The conductive material is disposed within the connecting window using a high-energy ion beam, wherein the vacuum level of the vacuum chamber is ≤1×10⁻⁶. -3 Pa, working air pressure is 0.1pa-0.5pa, injected energy is 400eV-700eV, and pulse frequency is 100Hz-300Hz.

10. The method for manufacturing a PCB according to any one of claims 1 to 6, characterized in that, The conductive material is one or more of the following: gold, copper, iron, silver, nickel, nitrogen, phosphorus, and carbon.

11. A PCB processing system, characterized in that, The PCB processing system is used to perform the PCB manufacturing method as described in any one of claims 1 to 10.

12. A PCB, characterized in that, The PCB is manufactured by the PCB manufacturing method as described in any one of claims 1 to 10.

Images