Wafer bearing device and wafer heat treatment equipment

The segmented design of the lifting component solves the problem of the center of gravity of the lifting component in the wafer carrier device, realizes the stable movement of the lifting component, avoids friction and dust generation, and ensures the quality of wafer processing.

CN122054972APending Publication Date: 2026-05-15CHENGDU ZIGUANG SEMICON TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CHENGDU ZIGUANG SEMICON TECH CO LTD
Filing Date
2024-11-13
Publication Date
2026-05-15

AI Technical Summary

Technical Problem

If the lifting component in the wafer carrier device is not designed properly, it is easy for the center of gravity to become skewed, which will cause friction with the through hole of the reflector, generate dust, and affect wafer processing.

Method used

The lifting component adopts a segmented design, including a cylindrical segment and a contact part. The cylindrical segment moves up and down within the through hole, while the contact part contacts or separates from the wafer, ensuring the stability of the cylindrical segment's center of gravity and avoiding friction with the through hole.

Benefits of technology

This effectively avoids friction between the side wall of the lifting component and the through hole, reduces dust generation, and ensures wafer processing quality.

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Abstract

The invention relates to a wafer bearing device and wafer heat treatment equipment, the wafer bearing device comprises a wafer tray, a reflector and a lifting piece, the wafer tray is used for bearing a wafer, the reflector is located below the wafer tray, a through hole penetrating through the reflector in the vertical direction is formed in the reflector, the lifting piece is arranged in the vertical direction, and the lifting piece is located in the through hole. The lifting part comprises a cylindrical section and a contact part, the contact part is connected to the top of the cylindrical section, the cylindrical section is arranged in the through hole in a penetrating mode and can move up and down in the through hole, the contact part is used for making contact with the wafer, and a gap is formed between the side wall, in the horizontal direction, of the cylindrical section and the hole wall of the through hole. According to the wafer bearing device, the lifting piece is divided into the cylindrical section and the contact part, the gravity center of the cylindrical section is located at the center position, the cylindrical section is stable, and the cylindrical section is not prone to deflection in the vertical moving process, so that friction between the side wall of the cylindrical section and the hole wall of the through hole can be avoided, generation of powdered scraps is avoided, and wafer machining is not affected.
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Description

Technical Field

[0001] This disclosure relates to the field of wafer loading and unloading technology, specifically to a wafer carrier device and a wafer heat treatment device. Background Technology

[0002] In related technologies, the lifting components in wafer carrier devices are often pin structures, meaning that the overall structure is large at one end and small at the other. This makes it easy for the center of gravity to shift when the lifting component is lifting, and the lifting component is prone to slight tilting. Then, the side wall of the lifting component will come into frictional contact with the hole wall of the reflector, which will generate some dust and affect the wafer processing and manufacturing. Summary of the Invention

[0003] The purpose of this disclosure is to provide a wafer carrier and a wafer thermal processing apparatus to solve the problems in the aforementioned related technologies.

[0004] To achieve the above objectives, one aspect of this disclosure provides a wafer carrier device, comprising: A wafer tray, which is used to hold wafers; A reflector located below the wafer tray, wherein the reflector has a through hole extending vertically through the reflector; A lifting component is provided, which is arranged vertically. The lifting component includes a cylindrical section and a contact portion. The contact portion is connected to the top of the cylindrical section. The cylindrical section passes through the through hole and can move up and down within the through hole. The contact portion is used to contact the wafer. A gap is provided between the side wall of the cylindrical section in the horizontal direction and the wall of the through hole. The lifting component has a first position and a second position. In the first position, the top of the contact portion is at a higher horizontal height than the wafer tray. In the second position, the top of the contact portion is at a lower horizontal height than the wafer tray.

[0005] Optionally, the axis of the cylindrical segment is coaxial or parallel to the axis of the through hole, and the ratio of the width of the cylindrical segment in the horizontal direction to the diameter of the through hole is 0.8-0.88.

[0006] Optionally, the diameter of the cylindrical section is set to 2mm-2.2mm, and the diameter of the through hole is set to 2.5mm.

[0007] Optionally, the width of the gap in the horizontal direction is set to 0.3mm-0.5mm.

[0008] Optionally, the contact portion is constructed as a pointed conical structure, and in the axial direction of the lifting component, the length of the contact portion is set to 11mm-13mm, and the length of the cylindrical segment is set to 130mm; In both the first and second positions, the cylindrical segment passes through the through hole, and the contact portion is located outside the through hole.

[0009] Optionally, the number of lifting components is at least three, the number of through holes is at least three, the lifting components correspond one-to-one with the through holes, and each lifting component is inserted into the corresponding through hole.

[0010] Optionally, the wafer tray is constructed in a ring shape, and the projection of the lifting member in the vertical direction is located within the projection of the wafer tray in the vertical direction.

[0011] Optionally, the wafer carrier further includes a driver, the output of which is connected to the lifting member, and the driver is used to drive the lifting member to move up and down.

[0012] Optionally, the wafer carrier further includes a bracket, a support cylinder, and a detection probe. The bracket has a chamber with an opening at the top. The wafer tray is connected to the opening at the top of the chamber. The support cylinder is located inside the chamber, and its top is connected to the wafer tray. The reflector and the lifting component are located inside the support cylinder. The detection probe is connected to the bottom of the bracket.

[0013] A second aspect of this disclosure also provides a wafer thermal processing apparatus, including a heating element and the aforementioned wafer carrier device; The heating element is positioned above the wafer carrier. The heating component includes a top frame, a light source support, multiple light emitters, and a transparent glass. The light source support is connected to the top frame, and the multiple light emitters are connected to the bottom of the light source support so that the multiple light emitters emit light toward the wafer placed on the wafer carrier. The multiple light emitters are arranged in an array, and the transparent glass is connected to the top frame and is located below the light emitters.

[0014] The above technical solution divides the lifting component into two parts: a cylindrical section and a contact section. The contact section is used to contact the wafer, while the cylindrical section is used to move up and down within the through-hole. As the cylindrical section moves up and down, the height of the contact section changes accordingly, achieving contact or separation with the wafer. The diameter of the entire cylindrical section is consistent, meaning that the diameter is the same whether it is the top, middle, or bottom of the cylindrical section. As a result, the center of gravity of the cylindrical section is in the central position, making it relatively stable. During the up and down movement of the cylindrical section, it is not easy for it to tilt, thereby avoiding friction between the sidewall of the cylindrical section and the wall of the through-hole, preventing the generation of dust, and not affecting the wafer processing.

[0015] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description

[0016] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a schematic diagram of the structure of a wafer heat treatment apparatus according to one embodiment of the present disclosure.

[0017] Figure 2 This is a schematic diagram of the relationship between the lifting component and the reflector in one embodiment of this disclosure.

[0018] Explanation of reference numerals in the attached figures 1. Wafer tray; 2. Reflector; 21. Through hole; 3. Lifting component; 31. Cylindrical section; 32. Contact part; 4. Stent; 41. Chamber; 5. Support cylinder; 6. Detection probe; 7. Heating component; 71. Top frame; 72. Light source; 73. Light source support; 74. Transparent glass. Detailed Implementation

[0019] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.

[0020] In this disclosure, unless otherwise stated, directional terms such as "upper" and "lower" are generally defined by the orientation of the accompanying drawings, and "inner" and "outer" refer to the inner and outer parts of the relevant components. Furthermore, terms such as "first" and "second" are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0021] In the description of this disclosure, it should also be noted that, unless otherwise expressly specified and limited, the terms "setup" and "connection" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can be a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this disclosure according to the specific circumstances.

[0022] Wafer heat treatment is a process in semiconductor manufacturing. In this process, the wafer needs to be transported to a wafer carrier by a robotic arm. During the transport, the lifting device in the wafer carrier rises to lift the wafer. Then the robotic arm releases the wafer and retracts. At this time, the lifting device descends, allowing the wafer to be placed on a wafer tray to achieve heat treatment.

[0023] In related technologies, the lifting components in wafer carrier devices are often pin structures, meaning that the overall structure is large at one end and small at the other. This makes it easy for the center of gravity to shift when the lifting component is lifting, and the lifting component is prone to slight tilting. Then, the side wall of the lifting component will come into frictional contact with the hole wall of the reflector, which will generate some dust and affect the wafer processing and manufacturing.

[0024] Therefore, such as Figure 1 and Figure 2 As shown, one aspect of this disclosure provides a wafer carrier device, including a wafer tray 1, a reflector 2, and a lifting member 3.

[0025] The wafer tray 1 is used to hold the wafer. The reflector 2 is located below the wafer tray 1. The reflector 2 has a through hole 21 that runs vertically through the reflector 2. The lifting member 3 is arranged vertically. The lifting member 3 includes a cylindrical section 31 and a contact part 32. The contact part 32 is connected to the top of the cylindrical section 31. The cylindrical section 31 passes through the through hole 21 and can move up and down within the through hole 21. The contact part 32 is used to contact the wafer. A gap is provided between the side wall of the cylindrical section 31 in the horizontal direction and the hole wall of the through hole 21.

[0026] The wafer tray 1 holds the wafer, facilitating its processing. The reflector 2 reflects incoming light, enabling heat treatment of the wafer. The lifting component 3 is vertically positioned, with its contact portion 32 located above the cylindrical section 31.

[0027] The lifting component 3 has a first position and a second position. In the first position, the top of the contact portion 32 is at a height higher than the wafer tray 1. In the second position, the top of the contact portion 32 is at a height lower than the wafer tray 1. It can be understood that in the first position, when the top of the contact portion 32 is at a height higher than the wafer tray 1, the contact portion 32 can contact the wafer and hold it in place. In the second position, when the top of the contact portion 32 is at a height lower than the wafer tray 1, the contact portion 32 separates from the wafer, allowing the wafer to be placed on the wafer tray 1.

[0028] In the above technical solution, the lifting component 3 is divided into two parts, namely the cylindrical section 31 and the contact part 32. The contact part 32 is used to contact the wafer, while the cylindrical section 31 is used to move up and down in the through hole 21. After the cylindrical section 31 moves up and down, the height of the contact part 32 changes accordingly, realizing contact or separation with the wafer. The diameter of the entire cylindrical section 31 is consistent. That is to say, whether it is the top, middle or bottom of the cylindrical section 31, its diameter is consistent. Thus, the center of gravity of the cylindrical section 31 is in the central position, which is relatively stable. During the up and down movement of the cylindrical section 31, it is not easy to tilt. This can avoid the side wall of the cylindrical section 31 from rubbing against the hole wall of the through hole 21, avoid the generation of dust, and not affect the wafer processing.

[0029] To further prevent the cylindrical segment 31 from skewing, optionally, in one embodiment of this disclosure, the axis of the cylindrical segment 31 is coaxial or parallel to the axis of the through hole 21, and the ratio of the width of the cylindrical segment 31 in the horizontal direction to the diameter of the through hole 21 is 0.8-0.88. By setting such a ratio, the dimensions of the cylindrical segment 31 and the through hole 21 are relatively close. When the cylindrical segment 31 moves up and down, it will not shift due to an excessive gap with the through hole 21, thereby further preventing the cylindrical segment 31 from skewing and rubbing against the hole wall of the through hole 21.

[0030] In some examples, the ratio of the width of the cylindrical segment 31 in the horizontal direction to the diameter of the through hole 21 can be 0.8, 0.81, 0.82, 0.83, 0.84, 0.85, 0.86, 0.87, or 0.88. It should be noted that the specific ratio of the width of the cylindrical segment 31 in the horizontal direction to the diameter of the through hole 21 can be selected according to actual needs. Similarly, the specific value of the width of the cylindrical segment 31 in the horizontal direction and the specific value of the diameter of the through hole 21 can also be selected according to actual needs.

[0031] Optionally, in one embodiment of this disclosure, the diameter of the cylindrical segment 31 is set to 2mm-2.2mm, and the diameter of the through hole 21 is set to 2.5mm. In some examples, the diameter of the cylindrical segment 31 may be 2mm, 2.1mm, or 2.2mm.

[0032] Optionally, in one embodiment of this disclosure, the width of the gap in the horizontal direction is set to 0.3mm-0.5mm. This setting ensures that the cylindrical segment 31 can move up and down within the through hole 21 without interference, while also preventing the gap between the cylindrical segment 31 and the through hole 21 from being too large, which could cause the lifting member 3 to skew and rub against the wall of the through hole 21. In some examples, the width of the gap in the horizontal direction can be 0.3mm, 0.4mm, or 0.5mm.

[0033] Optionally, in one embodiment of this disclosure, the contact portion 32 is constructed as a pointed cone shape, and the length of the contact portion 32 is set to 11mm-13mm in the axial direction of the lifting member 3, while the length of the cylindrical segment 31 is set to 130mm. In both the first and second positions, the cylindrical segment 31 passes through the through hole 21, and the contact portion 32 is located outside the through hole 21.

[0034] The contact portion 32 is constructed with a pointed conical structure, which facilitates contact with the wafer and reduces the contact area with the wafer, thereby minimizing the impact on the wafer. The width of the top of the contact portion 32 is smaller than the width of the bottom of the contact portion 32, meaning that the contact portion 32 is pointed at the top and wider at the bottom, and the width of the bottom of the contact portion 32 can be the same as the diameter of the cylindrical segment 31.

[0035] Setting the length of the contact portion 32 to 11mm-13mm allows it to occupy only a small portion of the entire lifting member 3, reducing its impact on the center of gravity and preventing skewing. It's understood that during the vertical movement of the lifting member 3, the cylindrical section 31 primarily engages with the through hole 21, while the contact portion 32 does not engage with it; it remains outside the through hole 21. In some examples, the length of the contact portion 32 can be 11mm, 12mm, or 13mm.

[0036] To improve the support for the wafer, optionally, in one embodiment of this disclosure, the number of lifting members 3 is at least three, and the number of through holes 21 is at least three. Each lifting member 3 corresponds to one through hole 21, with each lifting member 3 inserted into its corresponding through hole 21. The spacing between adjacent lifting members 3 is the same, thus maintaining the balance of the wafer placed on the lifting members 3.

[0037] Multiple lifting components 3 can be arranged around the axis of the wafer, allowing the multiple lifting components 3 to better support the wafer. In some examples, there are three lifting components 3 and three through holes 21. Of course, in other examples, there can be more lifting components 3, such as four or five, and the number of through holes 21 is set accordingly.

[0038] Optionally, in one embodiment of this disclosure, the wafer tray 1 is constructed as a ring structure, and the projection of the lifting member 3 in the vertical direction is located within the projection of the wafer tray 1 in the vertical direction. This arrangement avoids making the wafer carrier too large, while a small number of lifting members 3 are sufficient to ensure stable wafer transport and movement, allowing the wafer to be placed on the wafer tray 1.

[0039] Optionally, in one embodiment of this disclosure, the wafer carrier further includes a driver, the output of which is connected to the lifting member 3. The driver is used to drive the lifting member 3 to move up and down. The driver facilitates the up-and-down movement of the lifting member 3, achieving lifting. In some examples, the driver may be a cylinder, and the lifting member 3 may also include a base, with a cylindrical section 31 connected to the base, and the driver connected to the base.

[0040] Optionally, in one embodiment of this disclosure, the wafer carrier device further includes a support 4, a support cylinder 5, and a detection probe 6. The support 4 has a chamber 41 with an opening at the top. The wafer tray 1 is connected to the opening at the top of the chamber 41. The support cylinder 5 is located inside the chamber 41, and the top of the support cylinder 5 is connected to the wafer tray 1. The reflector 2 and the lifting member 3 are located inside the support cylinder 5. The detection probe 6 is connected to the bottom of the support 4.

[0041] The bracket 4 provides support, allowing the support cylinder 5 to be fixed on the bracket 4. The wafer tray 1 is connected to the support cylinder 5, which can support and fix the wafer tray 1, making it easier to carry the wafer. The chamber 41 can heat the wafer, allowing heat to accumulate and preventing heat dissipation.

[0042] A second aspect of this disclosure also provides a wafer thermal processing apparatus, including a heating element 7 and the aforementioned wafer carrier device.

[0043] The heating element 7 is positioned above the wafer carrier. The heating element 7 includes a top frame 71, a light source support 73, multiple light emitters 72, and a transparent glass 74. The light source support 73 is connected to the top frame 71, and the multiple light emitters 72 are connected to the bottom of the light source support 73 so that the multiple light emitters 72 emit light towards the wafer placed on the wafer carrier. The multiple light emitters 72 are arranged in an array. The transparent glass 74 is connected to the top frame 71 and is located below the light emitters 72.

[0044] Multiple light emitters 72 emit light, which shines downwards onto the wafer, heating it. Simultaneously, some light shines onto the emitter and, through reflection, generates heat within the chamber 41, achieving heat treatment of the wafer. A transparent glass 74 protects the light emitters 72 from damage by impact.

[0045] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.

[0046] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.

[0047] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.

Claims

1. A wafer carrier device, characterized in that, include: A wafer tray, which is used to hold wafers; A reflector located below the wafer tray, wherein the reflector has a through hole extending vertically through the reflector; A lifting component is provided, which is arranged vertically. The lifting component includes a cylindrical section and a contact portion. The contact portion is connected to the top of the cylindrical section. The cylindrical section passes through the through hole and can move up and down within the through hole. The contact portion is used to contact the wafer. A gap is provided between the side wall of the cylindrical section in the horizontal direction and the wall of the through hole. The lifting component has a first position and a second position. In the first position, the top of the contact portion is at a higher horizontal height than the wafer tray. In the second position, the top of the contact portion is at a lower horizontal height than the wafer tray.

2. The wafer carrier device according to claim 1, characterized in that, The axis of the cylindrical segment is coaxial or parallel to the axis of the through hole, and the ratio of the width of the cylindrical segment in the horizontal direction to the diameter of the through hole is 0.8-0.

88.

3. The wafer carrier device according to claim 2, characterized in that, The diameter of the cylindrical section is set to 2mm-2.2mm, and the diameter of the through hole is set to 2.5mm.

4. The wafer carrier device according to claim 1, characterized in that, The width of the gap in the horizontal direction is set to 0.3mm-0.5mm.

5. The wafer carrier device according to claim 1, characterized in that, The contact part is constructed as a pointed cone shape. In the axial direction of the lifting component, the length of the contact part is set to 11mm-13mm, and the length of the cylindrical section is set to 130mm. In both the first and second positions, the cylindrical segment passes through the through hole, and the contact portion is located outside the through hole.

6. The wafer carrier device according to claim 1, characterized in that, The number of lifting components is at least three, the number of through holes is at least three, the lifting components correspond one-to-one with the through holes, and each lifting component is inserted into the corresponding through hole.

7. The wafer carrier device according to claim 1, characterized in that, The wafer tray is constructed in a ring shape, and the projection of the lifting component in the vertical direction is located within the projection of the wafer tray in the vertical direction.

8. The wafer carrier device according to claim 1, characterized in that, The wafer carrier also includes a driver, the output of which is connected to the lifting component, and the driver is used to drive the lifting component to move up and down.

9. The wafer carrier device according to any one of claims 1-8, characterized in that, The wafer carrier further includes a bracket, a support cylinder, and a detection probe. The bracket has a chamber with an opening at the top. The wafer tray is connected to the opening at the top of the chamber. The support cylinder is located inside the chamber, and its top is connected to the wafer tray. The reflector and the lifting component are located inside the support cylinder. The detection probe is connected to the bottom of the bracket.

10. A wafer heat treatment apparatus, characterized in that, Includes a heating element and a wafer carrier as described in any one of claims 1-9; The heating element is positioned above the wafer carrier. The heating component includes a top frame, a light source support, multiple light emitters, and a transparent glass. The light source support is connected to the top frame, and the multiple light emitters are connected to the bottom of the light source support so that the multiple light emitters emit light toward the wafer placed on the wafer carrier. The multiple light emitters are arranged in an array, and the transparent glass is connected to the top frame and is located below the light emitters.