Multi-channel medium signal heterogeneous integrated module integrating TEC and silicon photoswitch

Abstract

The invention belongs to the technical field of data communication, and particularly relates to a multichannel dielectric signal heterogeneous integration module integrating a TEC and a silicon photoswitch, which comprises a ceramic substrate, a silicon substrate and a packaging substrate, and a packaging shell is arranged on the packaging substrate; a radio frequency microwave chip is arranged on the ceramic substrate, an analog / digital conversion chip, a power supply management chip, a signal control chip, a laser chip and a silicon optical chip are arranged on the silicon substrate, and semiconductor chilling plates are arranged on opposite surfaces of the ceramic substrate and the silicon substrate; an optical fiber connected with the silicon optical chip to achieve digital optical signal output / input penetrates through the packaging shell, and a solder ball array electrically connected with the outside to achieve input of a power signal and a control signal and output / input of a radio frequency signal is arranged on the packaging substrate. According to the invention, the size is obviously reduced, interconnection loss is reduced, and reliability is improved.

Description

Technical Field

[0001] This invention belongs to the field of data communication technology, specifically relating to a multi-channel dielectric signal heterogeneous integrated module that integrates TEC and silicon photonics switch. Background Technology

[0002] In data communication fields such as data centers, 5G communications, and high-performance computing, the requirements for data processing capacity, transmission rate, and integration density of radio frequency (RF) front-ends are increasing. Traditional solutions often use discrete optoelectronic devices or chips interconnected through board-level circuits, which has inherent bottlenecks such as large size, high power consumption, severe inter-channel crosstalk, and limited high-frequency performance. Especially under high power density conditions, the heat dissipation of RF and digital chips, as well as the wavelength thermal drift of CW laser (continuous wave laser) chips, have become key challenges restricting the long-term stability of the system.

[0003] While existing technologies employ multi-layer substrates to integrate radio frequency (RF) digital signals, they struggle to simultaneously achieve high-frequency, low-loss RF signal transmission, digital signal integrity, and multi-channel information interaction. For example, conventional PCBs suffer significant loss of high-frequency RF signals, and silicon photonics chips are difficult to integrate efficiently with various electrical chips. Furthermore, traditional external mechanical or thermo-optical switches for optical path switching further increase system size, insertion loss, and packaging complexity, failing to meet the urgent demands of modern devices for compactness, low power consumption, and high reliability. Therefore, existing technologies struggle to integrate RF, digital, and optical signals into a single design and fundamentally solve the integration challenges of heat dissipation management and dynamic optical path reconfiguration, thus failing to achieve high-performance, high-reliability, and compact multi-channel RF digital optoelectronic integrated modules. Summary of the Invention

[0004] To address the aforementioned technical problems, this invention provides a multi-channel dielectric signal heterogeneous integrated module that integrates TEC and silicon photonics switches.

[0005] The objective of this invention is achieved through the following technical solution. According to this invention, a multi-channel dielectric signal heterogeneous integrated module integrating a TEC (Digital Electronic Switching Device) and a silicon photonics switch comprises a ceramic substrate, a silicon substrate, and a packaging substrate stacked together. A packaging shell for packaging the ceramic substrate and the silicon substrate is disposed on the packaging substrate. An RF microwave chip for RF / IF conversion is disposed on the surface of the ceramic substrate facing away from the silicon substrate. An analog-to-digital converter chip for RF / digital signal conversion, a power management chip for receiving power signals and supplying power to the module, a signal control chip for receiving control signals and controlling the module, a laser chip for digital / optical signal conversion, and a silicon photonics chip are disposed on the surface of the silicon substrate facing away from the ceramic substrate. Semiconductor cooling wafers for cooling each chip are disposed on the opposite surfaces of the ceramic substrate and the silicon substrate. An optical fiber connected to the silicon photonics chip is threaded through the packaging shell to achieve digital optical signal output / input. A solder ball array electrically connected to the external source to achieve power signal, control signal input, and RF signal output / input is disposed on the packaging substrate.

[0006] Furthermore, the radio frequency microwave chip on the ceramic substrate is divided into a multi-functional transceiver chip assembly for realizing radio frequency signal transmission and reception and preprocessing, a down-conversion chip assembly for converting radio frequency signals into intermediate frequency signals, and an up-conversion chip assembly for converting intermediate frequency signals into radio frequency signals. The multi-functional transceiver chip assembly corresponds one-to-one with the paired down-conversion chip assembly and up-conversion chip assembly.

[0007] Furthermore, the multi-functional transceiver chip assembly includes a limiter, a first amplifier, a first single-pole double-throw switch, a phase shifter, and a second amplifier. The incoming radio frequency signal passes sequentially through the limiter, the first amplifier, the first single-pole double-throw switch, and the phase shifter, and is then transmitted to the down-conversion chip assembly via the second single-pole double-throw switch. The radio frequency signal transmitted from the up-conversion chip assembly passes sequentially through the second single-pole double-throw switch to the phase shifter, the first single-pole double-throw switch, and the second amplifier before being transmitted out.

[0008] Furthermore, the multi-functional transceiver chip assembly is electrically connected to the array antenna, which includes several transceiver antenna groups. Each transceiver antenna group includes a receiving antenna and a transmitting antenna, and each transceiver antenna group is electrically connected to a corresponding multi-functional transceiver chip assembly.

[0009] Furthermore, the downconverter chip assembly includes a third amplifier, a first bandpass filter, a first frequency converter, a fourth amplifier, a second bandpass filter, a second frequency converter, a first intermediate frequency filter, a fifth amplifier, and a first attenuator, which are connected in sequence. The third amplifier is electrically connected to the multi-function transceiver chip assembly through a second single-pole double-throw switch, and the first attenuator is electrically connected to the analog-to-digital converter chip through a third single-pole double-throw switch.

[0010] Furthermore, the upconversion chip assembly includes a sixth amplifier, a second intermediate frequency filter, a third frequency converter, a third bandpass filter, a seventh amplifier, a fourth bandpass filter, a fourth frequency converter, a fifth bandpass filter, an eighth amplifier, and a second attenuator, which are connected in sequence. The sixth amplifier is electrically connected to the analog-to-digital converter chip through a third single-pole double-throw switch, and the second attenuator is electrically connected to the multi-function transceiver chip assembly through a second single-pole double-throw switch.

[0011] Furthermore, the silicon photonics chip integrates a modulator, a silicon-based optical switch, and a detector. The modulator, in conjunction with the laser chip, modulates the electrical signal into a digital optical signal. The optical signal interaction between the channels is realized through a multi-channel silicon-based optical switch. The detector converts the input digital optical signal into an electrical signal and transmits it to the signal control chip. The silicon photonics chip is an all-optical cross-connect chip.

[0012] Furthermore, the radio frequency microwave chip is fixed to the corresponding position on the ceramic substrate using conductive adhesive, and electrically interconnected with the microstrip line on the ceramic substrate using gold wire bonding. Radio frequency signals, control signals, and power signals are electrically connected across layers through the redistribution layer and metallized vias inside the ceramic substrate.

[0013] Furthermore, digital-to-analog converter chips, power management chips, digital chips, laser chips, and silicon photonics chips are tightly interconnected with the silicon substrate through surface mount technology. The silicon substrate integrates high-density through-silicon vias and redistribution layers to provide high-speed signal channels between chips.

[0014] Furthermore, a heat sink is placed between the semiconductor cooling chips on the ceramic substrate and the silicon substrate. Heat is conducted to the packaging substrate through the heat sink and finally diffused into the external space. The cooling energy is directly conducted to each radio frequency microwave chip, digital-to-analog converter chip, power chip, digital chip, laser chip, and silicon photonics chip through the metal heat-conducting pillars set in the corresponding ceramic substrate and silicon substrate.

[0015] Compared with the prior art, the advantages of the present invention are: (1) Existing radio frequency digital transceiver modules only output electrical signals, resulting in high transmission loss over long distances and susceptibility to electromagnetic interference. This invention integrates optical fibers and laser chips and silicon photonics chips with optical-to-electric conversion capabilities within the module. In the transmitting state, the digital optical signal is transmitted via optical fiber to the silicon photonics chip bonded to the silicon substrate with gold wire. After processing by the digital chip on the board, a baseband radio frequency electrical signal is obtained, which is then transmitted through metallized vias to various radio frequency microwave chips for final output of radio frequency signals, thereby realizing optical-to-electric signal conversion. In the receiving state, the radio frequency signal from the ceramic substrate is transmitted through metallized vias and TSVs to the digital chip, processed, and then reaches the laser chip and silicon photonics chip to obtain a digital optical signal, which is then transmitted to the outside via optical fiber, realizing electro-optical signal conversion.

[0016] (2) Existing radio frequency digital transceiver modules are limited by electrical interconnect bandwidth, resulting in a limited number of channels and data throughput. This invention integrates a silicon photonics chip with routing switching function within the module. The state of the optical switch of the silicon photonics chip can be programmably controlled by a signal control chip to achieve dynamic routing and parallel interaction of multi-channel optical signals, thereby significantly improving the module's information processing capability.

[0017] (3) Existing RF digital transceiver modules have high profiles and low integration. This invention uses three-dimensional heterogeneous integration technology to reduce the overall size. This invention uses three-dimensional heterogeneous integration technology to arrange RF microwave chips, digital chips and optical chips according to functional partitions on ceramic substrates and silicon substrates. Three-dimensional stacking is completed through vertical interconnection of microbumps and high-density vias, so as to complete the integrated design of RF signal, digital signal and optical signal structure and function within the BGA package.

[0018] (4) Existing RF digital transceiver modules lack active heat dissipation. This invention integrates a semiconductor cooling chip and a heat sink within the module. Semiconductor cooling chips are attached to both the bottom layer of the ceramic substrate and the top layer of the silicon-based digital board. The cooling energy is directly conducted to each RF microwave chip, digital chip, and optical chip through metal heat-conducting pillars, and the heat is conducted to the packaging substrate and diffused to the outside through the heat sink, thus achieving active temperature control and efficient heat dissipation.

[0019] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, and to make the purpose, features and advantages of the present invention more obvious and understandable, preferred embodiments are described below in detail with reference to the accompanying drawings. Attached Figure Description

[0020] Figure 1 This is a cross-sectional schematic diagram of an embodiment of a multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to the present invention; Figure 2 This is a signal transmission route diagram of an embodiment of a multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to the present invention; Figure 3 for Figure 2 Schematic diagram of the routing of the all-optical cross-connect chip.

[0021] Figure label: 1-Packaging substrate, 2-Frame, 3-Cover plate, 4-Ceramic substrate, 5-GND, 6-Semiconductor cooling chip, 7-Silicon substrate, 8-Fiber optic cable, 9-Metallized via, 10-Heat sink, 11-TSV, 12-BGA. Detailed Implementation

[0022] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0023] An embodiment of the present invention provides a multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch, such as... Figures 1 to 3 As shown, this module is a heterogeneous integrated module for multi-channel RF-digital-optoelectronic media signals, integrating a TEC (Transceiver Technology) and a silicon photonics switch. Based on System-in-Package (SIP), this invention employs three-dimensional stacking technology to embed RF microwave chips [including a multi-functional transceiver chip assembly (TR) and up / down converter chip assembly], a thermoelectric cooler (TEC), digital chips [including an analog-to-digital converter chip (ADC / DAC), a power management chip, and a signal control chip], and optical chips (including laser chips and silicon photonics chips) into a high-density ceramic-silicon composite substrate (including LTCC-type ceramic substrates and silicon substrates). The RF microwave chips are disposed on the ceramic substrate 4, the digital chips and optical chips are disposed on the silicon substrate 7, and the thermoelectric cooler 6 is disposed between the ceramic substrate 4 and the silicon substrate 7. The ceramic-silicon composite substrate is then encapsulated within a casing (including a packaging substrate 1, a surrounding frame 2 disposed on the packaging substrate, and a cover plate 3 covering the surrounding ceramic-silicon composite substrate) using a sealing welding process. Fiber 8 extends from the side of the tube shell, and the solder ball array (BGA12) extends from the bottom packaging substrate 1 to complete the input and output of radio frequency signals, control signals, power signals and optical signals.

[0024] In terms of structure, this invention adopts a three-dimensional stacked integration method. The radio frequency front-end radio frequency microwave chip is integrated on a multi-layer high-density ceramic substrate 4, and the digital signal and optical signal processing modules (including digital chips and optical chips) are integrated on a silicon substrate, thereby achieving effective isolation between analog and digital circuits. Semiconductor cooling chips 6 are attached to the bottom cavity of the ceramic substrate 4 and the top cavity of the silicon substrate 7. A heat sink 10 is placed between two semiconductor cooling chips 6, and heat is conducted to the packaging substrate 1 through the heat sink 10, and finally diffused into the external space, thereby providing efficient heat dissipation for the radio frequency microwave chip, digital chip and optical chip.

[0025] This invention employs three-dimensional heterogeneous integration technology to fuse the package housing (including cover plate 3 and frame 2), ceramic substrate 4, silicon substrate 7, and package substrate 1 into a single integrated structure. The overall structure, from top to bottom, consists of: ceramic substrate 4 → silicon substrate 7 → package substrate 1. The ceramic substrate 4 is electrically interconnected with the silicon substrate 7 via a solder ball array; the package substrate 1 is bonded to the package housing using an adhesive process, and a solder ball array is embedded below it, forming a complete BGA package.

[0026] In the design of ceramic substrate 4, a specially designed hollow cavity is incorporated into the top layer of the ceramic substrate to precisely accommodate the core bare chips of various RF microwave chips, such as amplifiers, attenuators, mixers, and filters. These RF microwave chips are fixed to their corresponding positions in the top layer cavity of ceramic substrate 4 using conductive adhesive, and then electrically interconnected with microstrip lines on ceramic substrate 4 using gold wire bonding, ultimately forming a complete link. This link performs phase adjustment, amplification, attenuation, filtering, and frequency conversion processing of the received / transmitted signals. RF signals, control signals, and power signals are electrically connected across layers via the redistribution layer (RDL) inside the ceramic substrate and the metallized vias 9 to ensure the stability and integrity of signal transmission. A ground layer (GND5) is provided within the ceramic substrate for grounding.

[0027] The bottom layer of the silicon substrate 7 also features a hollowed-out cavity, primarily used for flip-chip mounting of core chips such as digital-to-analog converters, power management chips, digital chips, and optical chips. First, the chips are tightly interconnected with the silicon substrate using surface-mount technology. Second, the silicon substrate integrates high-density through-silicon vias (TSV11) and a redistribution layer, providing high-speed signal channels between chips. Finally, the silicon substrate 7 is securely bonded to the lower packaging substrate using a hermetically sealed soldering process. Furthermore, multimode optical fibers 8 are introduced into the sidewalls of the packaging shell to enable optical signal input / output, significantly reducing transmission loss and greatly improving electromagnetic interference immunity compared to traditional electrical interconnects. Thus, the silicon substrate 7 constitutes a bidirectional conversion channel for "RF electrical signals → digital electrical signals → digital optical signals," supplying power and control signals to the ceramic substrate 4 upwards and leading out external interfaces via the packaging substrate 1 downwards.

[0028] To ensure the thermal stability of the module during long-term operation, semiconductor cooling chips 6 are attached to the cavities of the bottom layer of the ceramic substrate 4 and the top layer of the silicon substrate 7. The cooling energy is directly conducted to each RF microwave chip, digital-to-analog converter chip, power chip, digital chip and optical chip through the metal heat-conducting pillars set in the ceramic substrate 4 and silicon substrate 7. The heat is then conducted to the packaging substrate 1 through the heat sink 10 and diffused to the outside, realizing active temperature control and efficient heat dissipation, effectively suppressing the risk of performance degradation or failure caused by local overheating.

[0029] In terms of signal processing in this invention, a multi-functional transceiver chip assembly and a superheterodyne double-conversion link (including an up-conversion chip assembly and a down-conversion chip assembly) are used to complete the radio frequency (RF) to intermediate frequency (IF) conversion. The multi-functional transceiver chip assembly is used to switch and preprocess the RF signals. The down-conversion chip assembly converts the RF signal to an IF signal, and the up-conversion chip assembly converts the IF signal to an RF signal. The RF to digital electrical signal conversion is achieved by a high-speed analog-to-digital converter chip. The optical chip completes the digital electrical to optical signal conversion and realizes the dynamic routing switching and interaction of multi-channel optical signals.

[0030] The module of this invention is electrically connected to an array antenna, which includes several transceiver antenna groups. Each transceiver antenna group includes a receiving antenna and a transmitting antenna. Each transceiver antenna group is electrically connected to a multi-functional transceiver chip assembly, and each multi-functional transceiver chip assembly is electrically connected to a superheterodyne double-conversion link. The several superheterodyne double-conversion links are electrically connected to a digital-to-analog converter (DAC) chip, which is electrically connected to a signal control chip. Externally input control signals are processed by the signal control chip and forwarded to other chips to control the various chip devices within the module. External power signals are processed by a power management chip and transmitted to the DAC chip, signal control chip, and other chip devices to power the module. The signal control chip outputs an electrical signal to a laser chip, and the optical signal emitted by the laser chip is processed by a silicon photonics chip and transmitted through an optical fiber. The input digital optical signal is processed by the silicon photonics chip and transmitted to the signal control chip.

[0031] The multi-functional transceiver chip assembly includes a limiter, a first amplifier, a first single-pole double-throw (SPL) switch, a phase shifter, and a second amplifier. The signal from the receiving antenna sequentially passes through the limiter, the first amplifier, the first SPL switch, and the phase shifter, and is then transmitted to the down-conversion chip assembly via the second SPL switch. The signal from the up-conversion chip assembly passes through the second SPL switch sequentially to the phase shifter, the first SPL switch, and the second amplifier, and is then transmitted to the transmitting antenna.

[0032] The downconverter chip assembly includes a third amplifier, a first bandpass filter, a first frequency converter, a fourth amplifier, a second bandpass filter, a second frequency converter, a first intermediate frequency filter, a fifth amplifier, and a first attenuator, which are connected in sequence. The third amplifier is electrically connected to a second single-pole double-throw switch, and the first attenuator is electrically connected to a third single-pole double-throw switch.

[0033] The upconverter chip assembly includes a sixth amplifier, a second intermediate frequency filter, a third frequency converter, a third bandpass filter, a seventh amplifier, a fourth bandpass filter, a fourth frequency converter, a fifth bandpass filter, an eighth amplifier, and a second attenuator, which are connected in sequence. The sixth amplifier is electrically connected to the third single-pole double-throw switch, and the second attenuator is electrically connected to the second single-pole double-throw switch.

[0034] Silicon photonics chips integrate modulators, silicon-based optical switches, and detectors. The modulator, in conjunction with a laser chip, modulates electrical signals into digital optical signals. Multi-channel silicon-based optical switches enable optical signal interaction between channels. The detector converts the input digital optical signal into an electrical signal and transmits it to the signal control chip. Silicon photonics chips are all-optical cross-connect chips. The silicon-based optical switches employ a specific topology (OXC, i.e., optical cross-connect), using thermo-optical modulation to achieve optical path switching and reconstruction. Specifically, each optical switch unit is designed based on the thermo-optical effect, integrating a miniature thermal modulator on a silicon waveguide. By applying an electrical signal to control local temperature changes, the refractive index of the waveguide material is altered, enabling optical signal conduction, blocking, and routing selection. By cascading multiple such optical switch units to form an optical switching network, multiple optical paths can be arbitrarily cross-connected within the area of ​​the silicon photonics chip, achieving non-blocking dynamic signal routing. Figure 3 As shown.

[0035] The signal transmission of this integrated module is divided into two working modes: "receive" and "transmit".

[0036] Reception Status: The RF signal from the external array antenna first enters the module via the BGA pads and is transmitted to the ceramic substrate 4 through TSV11 and metallized vias 9. Subsequently, the signal is processed sequentially by multiple RF microwave chips (including a multi-functional transceiver chip assembly and a down-conversion chip assembly), down-converting it to an RF baseband signal. This signal continues to be transmitted through metal vias 9 and TSV11 to the digital signal processing layer of the silicon substrate 7, where it is converted into a digital signal by the analog-to-digital converter (ADC) chip. After processing by the signal control chip, the digital signal drives the laser chip and then enters the silicon photonics chip. Finally, the optical signal is output to the outside through optical fiber 8. It is worth noting that the semiconductor cooling chip 6 provides heat dissipation for the RF microwave chip, digital chip, and optical chip, ensuring that each chip is always at its optimal operating temperature, thereby maintaining the overall system performance.

[0037] Transmission Status: External optical signals enter the module via optical fiber and are first converted into digital electrical signals by the silicon photonics chip. This digital signal is then transmitted via TSV11 to the digital-to-analog converter (DAC) chip within the analog-to-digital converter (ADC) chip, where it is converted into a baseband RF signal. Subsequently, the signal is transmitted via TSV11 and metal via 9 to the ceramic substrate 4, where the RF microwave chip on the ceramic substrate 4 performs a series of processes (including filtering, amplification, attenuation, frequency conversion, and phase shifting) to ultimately generate the required RF signal. This RF signal is finally transmitted to the external antenna via BGA pads. It is worth noting that semiconductor cooling chips are used to dissipate heat from the RF microwave chip, digital chip, and optical chip, ensuring that each chip is always at its optimal operating temperature, thereby maintaining the overall system performance.

[0038] In summary, this invention proposes a multi-channel dielectric signal heterogeneous integrated module that integrates TEC and silicon photonics switch. Due to its active temperature control, multi-functional integration and multi-channel information interaction characteristics, it shows great research and development potential in future communication systems.

[0039] This invention significantly reduces size, interconnection loss, and improves reliability, providing a feasible technical path for future multifunctional and miniaturized communication systems. Building upon the advantages of three-dimensional heterogeneous integration, this invention introduces a silicon-based optical switch (i.e., a silicon photonic chip) to achieve dynamic optical path reconfiguration on a silicon substrate. Compared to external mechanical / thermo-optical switches, it achieves nanosecond-level high-speed and milliwatt-level low-power optical path switching. This significantly reduces system insertion loss, packaging complexity, and overall size, making it possible to implement complex optical connections and topologies at the chip level, and serving as an ideal carrier for "dynamic optical path reconfiguration." Simultaneously, it integrates a TEC (thermal control unit) for precise temperature control, ensuring high system performance and reliability. Compared to the traditional "external heat sink + fan," integrating the TEC chip into the package allows the cold source to be placed directly above the heat source, shortening the thermal path. Furthermore, utilizing the TEC's bidirectional temperature control characteristics, the chip junction temperature fluctuation can be controlled within ±2°C even at ambient temperatures ranging from -40°C to +85°C. This eliminates phase jitter caused by temperature drift in the RF link and avoids increased optical insertion loss and a surge in digital bit error rate due to high temperatures, thereby significantly improving the system's long-term reliability and signal integrity.

[0040] The present invention addresses the shortcomings of existing technologies as follows.

[0041] (1) Existing radio frequency digital transceiver modules only output electrical signals, resulting in high transmission loss over long distances and susceptibility to electromagnetic interference. This invention integrates optical fibers and laser chips and silicon photonics chips with optical-to-electric conversion capabilities within the module. In the transmitting state, the digital optical signal is transmitted via optical fiber to the silicon photonics chip bonded to the silicon substrate with gold wire. After processing by the digital chip on the board, a baseband radio frequency electrical signal is obtained, which is then transmitted through metallized vias to various radio frequency microwave chips for final output of radio frequency signals, thereby realizing optical-to-electric signal conversion. In the receiving state, the radio frequency signal from the ceramic substrate is transmitted through metallized vias and TSVs to the digital chip, processed, and then reaches the laser chip and silicon photonics chip to obtain a digital optical signal, which is then transmitted to the outside via optical fiber, realizing electro-optical signal conversion.

[0042] (2) Existing radio frequency digital transceiver modules are limited by electrical interconnect bandwidth, resulting in a limited number of channels and data throughput. This invention integrates a silicon photonics chip with routing switching function within the module. The state of the optical switch of the silicon photonics chip can be programmably controlled by a signal control chip to achieve dynamic routing and parallel interaction of multi-channel optical signals, thereby significantly improving the module's information processing capability.

[0043] (3) Existing RF digital transceiver modules have high profiles and low integration. This invention uses three-dimensional heterogeneous integration technology to reduce the overall size. This invention uses three-dimensional heterogeneous integration technology to arrange RF microwave chips, digital chips and optical chips according to functional partitions on ceramic substrates and silicon substrates. Three-dimensional stacking is completed through vertical interconnection of microbumps and high-density vias, so as to complete the integrated design of RF signal, digital signal and optical signal structure and function within the BGA package.

[0044] (4) Existing RF digital transceiver modules lack active heat dissipation. This invention integrates a semiconductor cooling chip and a heat sink within the module. Semiconductor cooling chips are attached to both the bottom layer of the ceramic substrate and the top layer of the silicon-based digital board. The cooling energy is directly conducted to each RF microwave chip, digital chip, and optical chip through metal heat-conducting pillars, and the heat is conducted to the packaging substrate and diffused to the outside through the heat sink, thus achieving active temperature control and efficient heat dissipation.

[0045] In other embodiments of the present invention, improvements are made based on the above embodiments. The positions of the ceramic substrate 4 and the silicon substrate 7 can be symmetrically transformed. The ceramic substrate 4 is disposed on the packaging substrate 1, and the silicon substrate 7 is disposed above the ceramic substrate 4. An RF microwave chip is disposed on the bottom layer of the ceramic substrate 4, and a semiconductor cooling chip is disposed on the top layer. A semiconductor cooling chip is disposed on the bottom layer of the silicon substrate, and an analog-to-digital converter chip, a power supply chip, a digital chip, and an optical chip are disposed on the bottom layer of the silicon substrate.

[0046] In other embodiments of the present invention, improvements are made based on the above embodiments, and the array antenna can be integrated and disposed on the outer side of the packaging substrate 1, thereby integrating the array antenna on the module.

[0047] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch, characterized in that: The package includes a ceramic substrate (4), a silicon substrate (7), and a packaging substrate (1) stacked together. The packaging substrate (1) is provided with a packaging shell for packaging the ceramic substrate (4) and the silicon substrate (7). The surface of the ceramic substrate (4) facing away from the silicon substrate (7) is provided with an RF / IF conversion microwave chip. The surface of the silicon substrate (7) facing away from the ceramic substrate (4) is provided with an analog / digital converter chip for RF / digital signal conversion, a power management chip for receiving power signals and supplying power to the module, a signal control chip for receiving control signals and controlling the module, a laser chip for digital / optical signal conversion, and a silicon photonics chip. The surfaces of the ceramic substrate (4) and the silicon substrate (7) facing each other are provided with semiconductor cooling chips (6) for cooling each chip. An optical fiber (8) is passed through the packaging shell and connected to the silicon photonics chip to realize digital optical signal output / input. The packaging substrate (1) is provided with a solder ball array that is electrically connected to the outside to realize the input of power signals, control signals, and RF signals.

2. The multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 1, characterized in that: The radio frequency microwave chip on the ceramic substrate (4) is divided into a multi-functional transceiver chip assembly for realizing radio frequency signal transmission and reception and preprocessing, a down-conversion chip assembly for converting radio frequency signals into intermediate frequency signals, and an up-conversion chip assembly for converting intermediate frequency signals into radio frequency signals. The multi-functional transceiver chip assembly corresponds one-to-one with the down-conversion chip assembly and the up-conversion chip assembly that are set in pairs.

3. The multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 2, characterized in that: The multi-functional transceiver chip assembly includes a limiter, a first amplifier, a first single-pole double-throw switch, a phase shifter, and a second amplifier. The incoming radio frequency signal passes sequentially through the limiter, the first amplifier, the first single-pole double-throw switch, and the phase shifter, and is then transmitted to the down-conversion chip assembly via the second single-pole double-throw switch. The radio frequency signal transmitted from the up-conversion chip assembly passes sequentially through the second single-pole double-throw switch to the phase shifter, the first single-pole double-throw switch, and the second amplifier before being transmitted out.

4. The multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 3, characterized in that: The multi-functional transceiver chip assembly is electrically connected to the array antenna, which includes several transceiver antenna groups. Each transceiver antenna group includes a receiving antenna and a transmitting antenna, and each transceiver antenna group is electrically connected to a corresponding multi-functional transceiver chip assembly.

5. A multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 2, characterized in that: The downconverter chip assembly includes a third amplifier, a first bandpass filter, a first frequency converter, a fourth amplifier, a second bandpass filter, a second frequency converter, a first intermediate frequency filter, a fifth amplifier, and a first attenuator, which are connected in sequence. The third amplifier is electrically connected to the multi-function transceiver chip assembly through a second single-pole double-throw switch, and the first attenuator is electrically connected to the analog-to-digital converter chip through a third single-pole double-throw switch.

6. The multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 2, characterized in that: The upconversion chip assembly includes a sixth amplifier, a second intermediate frequency filter, a third frequency converter, a third bandpass filter, a seventh amplifier, a fourth bandpass filter, a fourth frequency converter, a fifth bandpass filter, an eighth amplifier, and a second attenuator, which are connected in sequence. The sixth amplifier is electrically connected to the analog-to-digital converter chip through a third single-pole double-throw switch, and the second attenuator is electrically connected to the multi-function transceiver chip assembly through a second single-pole double-throw switch.

7. The multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 1, characterized in that: The silicon photonics chip integrates a modulator, a silicon-based optical switch, and a detector. The modulator works with the laser chip to modulate electrical signals into digital optical signals. The optical signals between the channels are interacted through a multi-channel silicon-based optical switch. The detector converts the input digital optical signals into electrical signals and transmits them to the signal control chip. The silicon photonics chip is an all-optical cross-connect chip.

8. The multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 1, characterized in that: The radio frequency microwave chip is fixed to the corresponding position on the ceramic substrate (4) by conductive adhesive process, and electrically interconnected with the microstrip line on the ceramic substrate (4) by gold wire bonding process. Radio frequency signals, control signals and power signals are electrically connected across layers through the redistribution layer and metallized vias (9) inside the ceramic substrate (4).

9. A multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 1, characterized in that: The digital-to-analog converter chip, power management chip, digital chip, laser chip and silicon photonics chip are tightly interconnected with the silicon substrate (7) through surface mount technology. The silicon substrate (7) integrates high-density silicon vias and redistribution layers to provide high-speed signal channels between chips.

10. A multi-channel dielectric signal heterogeneous integrated module integrating TEC and silicon photonics switch according to claim 1, characterized in that: A heat sink (10) is provided between the semiconductor cooling chip (6) on the ceramic substrate (4) and the silicon substrate (7). Heat is conducted to the packaging substrate (1) through the heat sink (10) and finally diffused into the external space. The cooling energy is directly conducted to each radio frequency microwave chip, digital / analog converter chip, power chip, digital chip, laser chip, and silicon photonic chip through the metal heat-conducting pillars provided in the corresponding ceramic substrate (4) and silicon substrate (7).

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