Generator preparation method for human body wearable device
Alternating P-type and N-type semiconductor thermoelectric fiber units were prepared by thermal drawing, stacked, cut, and encapsulated in flexible materials. This solved the problems of low output and difficulty in scaling up wearable thermoelectric generators, and enabled the fabrication of efficient and stable wearable generators.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- INST OF ENGINEERING THERMOPHYSICS - CHINESE ACAD OF SCI
- Filing Date
- 2026-01-05
- Publication Date
- 2026-05-19
AI Technical Summary
Existing wearable thermoelectric generators have output performance below the continuous power requirements in the microwatt to milliwatt range, and the brittle characteristics of Bi2Te3 material in near-room temperature environments make it unsuitable for long-term human wear. Existing preparation processes are complex and difficult to scale up.
P-type and N-type semiconductor thermoelectric fiber units were prepared by thermal drawing method. Through alternating arrangement, stacking, cutting and encapsulation processes, micro thermoelectric devices were formed and encapsulated in flexible elastomers to achieve efficient and large-scale preparation.
It has enabled the efficient and large-scale fabrication of micro thermoelectric devices, which are suitable for long-term wear and provide a stable power supply.
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Figure CN122069936A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of micro thermoelectric technology and discloses a method for manufacturing a generator for wearable human devices. Background Technology
[0002] With the rapid development of wearable electronics, a large number of electronic devices suitable for human wear have emerged in our lives, including smartwatches and smart glasses. While these devices offer powerful functions and convenience, long-term battery life remains the biggest challenge. Developing a generator that is comfortable to wear and can provide stable power over a long period has become a key research focus for many researchers. Thermoelectric materials can directly convert the thermal gradient between the human body and the environment into electrical energy. Their energy conversion mechanism requires no mechanical movement or chemical catalysis, exhibiting excellent long-term operational stability. This holds promise for solving the key challenge of uninterrupted power supply for self-powered wearable electronic devices, which has constrained the development of wearable technology. Nevertheless, the widespread adoption of self-powered wearable systems based on thermoelectric generators in practical applications remains very limited. Most wearable devices require continuous power input in the microwatt to milliwatt range, while the output performance of existing wearable TEGs is generally below this threshold.
[0003] It is worth noting that bulk Bi2Te3, as the only commercially available thermoelectric material, is widely used in wearable thermoelectric generators due to its excellent T-value at room temperature. However, this material exhibits intrinsic brittleness near room temperature, which is not conducive to long-term wear by the human body. To meet the mechanical flexibility requirements of wearable devices, researchers typically employ flexible substrate encapsulation strategies to structurally strengthen Bi2Te3 thermoelectric materials. However, the related fabrication processes are complex and difficult to scale up for mass production. Summary of the Invention
[0004] The purpose of this invention is to provide a method for manufacturing a generator for wearable devices, which enables efficient and large-scale manufacturing of micro thermoelectric devices and generators.
[0005] To achieve the above-mentioned technical effects, the technical solution adopted by the present invention is as follows: A method for manufacturing a generator for wearable human devices, comprising: P-type semiconductor thermoelectric fiber units and N-type semiconductor thermoelectric fiber units prepared by hot drawing method are arranged in a preset arrangement to form a single-layer P / N or N / P alternating first thermoelectric sheet and second thermoelectric sheet. The first and second thermoelectric sheets are alternately stacked to form a thermoelectric block; then the micro thermoelectric block is cut into several micro thermoelectric blocks with designed lengths. Conductive electrodes are formed at both ends of the micro thermoelectric block, and P-type semiconductor thermoelectric fiber units and N-type semiconductor thermoelectric fiber units are connected in series alternately to form a micro thermoelectric device. The micro thermoelectric device is encapsulated in a flexible elastomer to obtain a generator for wearable devices.
[0006] Furthermore, two or more of the aforementioned micro thermoelectric devices are connected in series within the flexible elastomer.
[0007] Furthermore, the method for arranging P-type semiconductor thermoelectric fiber units and N-type semiconductor thermoelectric fiber units prepared by the hot drawing method according to a preset arrangement and forming a single-layer P / N alternating first thermoelectric sheet and second thermoelectric sheet is as follows: the P-type semiconductor thermoelectric fiber units and N-type semiconductor thermoelectric fiber units are laid flat according to preset arrangements of P / N / P / N / P / N and N / P / N / P / N / P respectively, and then encapsulated with epoxy resin to form the single-layer P / N or N / P alternating first thermoelectric sheet and second thermoelectric sheet.
[0008] Furthermore, the formula for calculating the number of P-type semiconductor thermoelectric fiber units and N-type semiconductor thermoelectric fiber units in a single micro thermoelectric block is as follows: ; in, The number of P-type semiconductor thermoelectric fiber units and N-type semiconductor thermoelectric fiber units; The designed power output of the generator; The number of miniature thermoelectric blocks in the generator; The resistivity of the N-type semiconductor thermoelectric fiber unit; The resistivity of the P-type semiconductor thermoelectric fiber unit; The length of the semiconductor thermoelectric fiber unit; The radius of the semiconductor thermoelectric fiber unit; The total Seebeck coefficient for P-type semiconductor thermoelectric fiber units and N-type semiconductor thermoelectric fiber units; The temperature difference between the two ends of the micro thermoelectric block is denoted as .
[0009] Furthermore, the step of forming conductive electrodes at both ends of the micro thermoelectric block includes: A mask template is fabricated according to the design shape of the conductive electrode and fixed at both ends of the micro thermoelectric block to define the forming area of the conductive electrode; A transition layer metal film is formed in the conductive electrode forming areas at both ends of the micro thermoelectric block by magnetron sputtering. Then, a copper electrode film is formed on the transition layer metal film by electroplating. The conductive electrode is obtained by removing the mask.
[0010] Furthermore, the mask template is a polyimide film.
[0011] Furthermore, the ends of the micro thermoelectric block are polished before magnetron sputtering is performed on both ends of the micro thermoelectric block.
[0012] Furthermore, both the P-type semiconductor thermoelectric fiber unit and the N-type semiconductor thermoelectric fiber unit include a Bi2Te3 fiber core and a glass cladding.
[0013] Furthermore, the flexible elastomer is SEBS thermoplastic elastomer.
[0014] Compared with the prior art, the beneficial effects of this invention are: This invention simplifies the process by employing fiber arrangement, sheet curing, block stacking, block cutting, and encapsulation methods, enabling efficient and large-scale fabrication of micro thermoelectric devices and generators compared to existing processes. Attached Figure Description
[0015] Figure 1 This is a flowchart illustrating the method for preparing a generator for wearable devices in this embodiment. Figure 2 This is a schematic diagram of the structure of the P-type semiconductor thermoelectric fiber unit and the N-type semiconductor thermoelectric fiber unit in the embodiment; Figure 3 This is a schematic diagram of the structure of the first and second thermoelectric sheets in the embodiment; Figure 4 This is a schematic diagram of the thermoelectric block structure in the embodiment; Figure 5 This is a schematic diagram of the structure of the micro thermoelectric block in the embodiment; Figure 6 This is a schematic diagram of the structure of the micro thermoelectric block and the mask template in the embodiment; Figure 7 This is a schematic diagram of the structure of the micro thermoelectric device in the embodiment; Among them, 1-P-type semiconductor thermoelectric fiber unit, 2-N-type semiconductor thermoelectric fiber unit, 3-first thermoelectric sheet, 4-second thermoelectric sheet, 5-thermoelectric block, 6-micro thermoelectric block, 7-mask, 8-conductive electrode. Detailed Implementation
[0016] The present invention will now be described in further detail with reference to the embodiments and accompanying drawings. However, this should not be construed as limiting the scope of the above-described subject matter of the present invention to the following embodiments; all technologies implemented based on the content of the present invention fall within the scope of the present invention.
[0017] See Figures 1 to 7 The present invention provides a method for manufacturing a generator for wearable human devices, comprising: Several pairs of semiconductor thermoelectric fiber units were prepared by hot drawing method. Each pair of semiconductor thermoelectric fiber units includes a P-type semiconductor thermoelectric fiber unit 1 and an N-type semiconductor thermoelectric fiber unit 2. Several pairs of semiconductor thermoelectric fiber units are laid flat, and the P-type semiconductor thermoelectric fiber unit 1 and the N-type semiconductor thermoelectric fiber unit 2 are arranged in a preset arrangement to form a single-layer P / N or N / P alternating first thermoelectric sheet 3 and second thermoelectric sheet 4. The first thermoelectric sheet 3 and the second thermoelectric sheet 4 are alternately stacked to form a thermoelectric block 5; then the thermoelectric block 5 is cut into several micro thermoelectric blocks 6 with designed lengths. Conductive electrodes 8 are formed at both ends of the micro thermoelectric block 6, and the P-type semiconductor thermoelectric fiber unit 1 and the N-type semiconductor thermoelectric fiber unit 2 are connected in series alternately to form a micro thermoelectric device. The micro thermoelectric device is encapsulated in a flexible elastomer to obtain a generator for wearable devices.
[0018] This invention simplifies the process by employing fiber arrangement, sheet curing, block stacking, block cutting, and encapsulation methods, enabling efficient and large-scale fabrication of micro thermoelectric devices and generators compared to existing processes.
[0019] Example This embodiment further elaborates on the method for manufacturing a generator for wearable human devices, including the following steps: Step 1: Using the hot drawing method, P-type Bi2Te3 thermoelectric fiber units and N-type Bi2Te3 thermoelectric fiber units are prepared using preforms loaded with Bi2Te3 material, such as... Figure 2 As shown, one P-type Bi2Te3 thermoelectric fiber unit and one N-type Bi2Te3 thermoelectric fiber unit constitute a pair of Bi2Te3 thermoelectric fiber units. Both the P-type and N-type Bi2Te3 thermoelectric fiber units include a Bi2Te3 fiber core and a glass cladding. The glass cladding provides mechanical support for the Bi2Te3 fiber core and prevents external abrasion.
[0020] Step Two: Lay several pairs of Bi2Te3 thermoelectric fiber units flat on a silicone mold, arranging the P-type and N-type Bi2Te3 thermoelectric fiber units according to preset patterns of P / N / P / N / P / N and N / P / N / P / N / P. Then, mix epoxy resin at a 1:2 ratio and pour it into the silicone mold. Stop adding epoxy resin when it just covers the thermoelectric fibers. After the epoxy resin cures, a single-layer P / N alternating first thermoelectric sheet 3 and a single-layer N / P alternating second thermoelectric sheet 4 are formed, as shown below. Figure 3As shown.
[0021] Step 3: Alternately stack the first thermoelectric sheet 3 and the second thermoelectric sheet 4, and apply epoxy resin between the sheets. After the epoxy resin cures, a thermoelectric block 5 is formed. Then, use a ruby cutting tool to cut the thermoelectric block 5 into several micro thermoelectric blocks 6 of designed length, such as... Figure 4 and Figure 5 As shown.
[0022] It should be noted that the logarithm of the Bi2Te3 thermoelectric fiber unit in a single micro thermoelectric block 6 is determined by the following formula: ; in, is the logarithm of the Bi2Te3 thermoelectric fiber unit; The designed power output of the generator; The number of miniature thermoelectric blocks 6 in the generator; The resistivity of the N-type Bi2Te3 thermoelectric fiber unit; The resistivity of the P-type Bi2Te3 thermoelectric fiber unit; The length of the Bi2Te3 thermoelectric fiber unit is equal to the design length of the micro thermoelectric block 6; The radius of the Bi2Te3 thermoelectric fiber unit; The total Seebeck coefficient of the P-type Bi₂Te₃ thermoelectric fiber unit and the N-type Bi₂Te₃ thermoelectric fiber unit is equal to the Seebeck coefficient of the P-type Bi₂Te₃ thermoelectric fiber unit. The absolute value of the relative Seebeck coefficient of the N-type Bi2Te3 thermoelectric fiber unit The sum of the absolute values; The temperature difference between the two ends of the micro thermoelectric block 6.
[0023] Step 4: First, based on the arrangement and spacing of the Bi2Te3 thermoelectric fiber units in the micro thermoelectric block 6, design the shape of the conductive electrode 8. Then, based on the designed shape of the conductive electrode 8, fabricate a mask 7 using a polyimide film, such as... Figure 6 As shown. The mask 7 is made of polyimide film, which gives it good thermal stability, corrosion resistance and mechanical properties.
[0024] Next, P4000 grit sandpaper is used to polish the upper and lower end faces of the micro thermoelectric block 6 with a polishing machine. Then, the mask template 7 is attached to the upper and lower ends of the micro thermoelectric block 6 to define the forming area of the conductive electrode 8.
[0025] Then, the micro thermoelectric block 6 was ultrasonically cleaned with deionized water for 30 min, followed by argon plasma cleaning of the upper and lower end faces of the micro thermoelectric block 6 for 3 min to remove impurities, improve the electrical contact between the magnetron sputtered film and the thermoelectric material, and reduce the contact resistance at the interface. After cleaning, magnetron sputtering was performed on both ends of the micro thermoelectric block 6 at a pressure of 0.4 Pa to improve the density of the deposited metal film. A 500 nm transition layer nickel film was formed on the surface of both ends of the micro thermoelectric block 6 by magnetron sputtering.
[0026] Finally, to prevent oxidation of the coating surface, the micro thermoelectric block 6 was stored in a vacuum environment and transferred to an argon glove box for electroplating, forming a copper electrode film on the transition nickel film. Specifically, during electroplating, a current source (Keithley Model 2460) was used to provide a stable current, copper solution was selected as the electrolyte, a high-purity titanium mesh was used as the anode, and the cathode was connected to the transition nickel film of the micro thermoelectric block 6 to be electroplated via a wire. Through electroplating, a copper electrode film was formed on the transition nickel film, and the mask 7 was removed to obtain the conductive electrode 8. Through the conductive electrode 8, the P-type Bi2Te3 thermoelectric fiber units and N-type Bi2Te3 thermoelectric fiber units in the micro thermoelectric block 6 were alternately connected in series to form a micro thermoelectric device, such as... Figure 7 As shown.
[0027] Before performing measurement and control sputtering on both ends of the micro thermoelectric block 6 in this embodiment, the two ends of the micro thermoelectric block 6 are polished to reduce the roughness of the two ends of the micro thermoelectric block 6, thereby improving the connection strength between the end face of the micro thermoelectric block 6 and the transition layer nickel film and copper electrode film, preventing the transition layer nickel film and copper electrode film from falling off, and enabling the micro thermoelectric device to operate stably for a long time.
[0028] Step 5: Encapsulate the micro-thermoelectric devices within a flexible elastomer to obtain a generator for wearable devices. It should be noted that the number of micro-thermoelectric devices within the flexible elastomer can be one or more. Multiple micro-thermoelectric devices can be connected in series or in parallel. Taking multiple micro-thermoelectric devices connected in series as an example, the multiple micro-thermoelectric devices are arranged at equal intervals, connected in series using copper wire, and the copper wire is welded to the micro-thermoelectric devices. The gaps between the micro-thermoelectric devices are filled with SEBS thermoplastic elastomer. Then, the SEBS thermoplastic elastomer is heated and melted. After the SEBS thermoplastic elastomer cools and solidifies, the generator for wearable devices is obtained. Because SEBS thermoplastic elastomer can be bent arbitrarily, it can be used in wearable devices to generate electricity by utilizing the temperature difference between the environment and body temperature.
[0029] The generator produced by this invention includes at least one miniature thermoelectric device, which comprises several pairs of semiconductor thermoelectric fiber units, epoxy resin, conductive electrodes 8, and wires. Each pair of semiconductor thermoelectric fiber units includes a P-type semiconductor thermoelectric fiber unit 1 and an N-type semiconductor thermoelectric fiber unit 2. The P-type semiconductor thermoelectric fiber unit 1 and the N-type semiconductor thermoelectric fiber unit 2 are the core components of the thermoelectric effect, responsible for the mutual conversion between electrical energy and thermal energy. To ensure that the semiconductor thermoelectric fiber units have strong mechanical strength, a glass cladding is retained on the semiconductor thermoelectric fiber units. In order to form a large potential difference across the two ends of the miniature thermoelectric device, several pairs of semiconductor thermoelectric fiber units are arranged in parallel to form thermal parallel connection and are cured by epoxy resin into tiny miniature thermoelectric devices. The conductive electrodes 8 include a transition layer nickel film and a copper electrode film. The transition layer nickel film serves as a transition layer between the semiconductor thermoelectric fiber unit and the copper electrode film, improving the wettability of the semiconductor thermoelectric fiber unit and the copper electrode film, enhancing the bonding strength, reducing the interface resistance and contact thermal resistance, and preventing element diffusion at the interface between the semiconductor thermoelectric fiber unit and the copper electrode film. Furthermore, the nickel transition layer film possesses high electrical and thermal conductivity, making it an excellent conductor of both electricity and heat. The copper electrode film, as a metallic electrode, exhibits good electrical and thermal conductivity. Since the output voltage of a single semiconductor thermoelectric fiber unit is relatively small, conductive electrodes 8 are used on the surface of the micro-thermoelectric device to connect the P-type semiconductor thermoelectric fiber unit 1 and the N-type semiconductor thermoelectric fiber unit 2 in series to obtain the maximum designed output voltage.
[0030] The above are merely preferred embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention should be included within the protection scope of the present invention.
Claims
1. A method for manufacturing a generator for wearable human devices, characterized in that, include: Several pairs of semiconductor thermoelectric fiber units were prepared by thermal drawing method. Each pair of semiconductor thermoelectric fiber units includes a P-type semiconductor thermoelectric fiber unit (1) and an N-type semiconductor thermoelectric fiber unit (2). Several pairs of semiconductor thermoelectric fiber units are laid flat, and the P-type semiconductor thermoelectric fiber units (1) and the N-type semiconductor thermoelectric fiber units (2) are arranged in a preset arrangement to form a single-layer P / N or N / P alternating first thermoelectric sheet (3) and second thermoelectric sheet (4). The first thermoelectric sheet (3) and the second thermoelectric sheet (4) are alternately stacked to form a thermoelectric block (5); then the thermoelectric block (5) is cut into several micro thermoelectric blocks (6) with designed lengths; Conductive electrodes (8) are formed at both ends of the micro thermoelectric block (6), and the P-type semiconductor thermoelectric fiber unit (1) and the N-type semiconductor thermoelectric fiber unit (2) are connected in series alternately to form a micro thermoelectric device; The micro thermoelectric device is encapsulated in a flexible elastomer to obtain a generator for wearable devices.
2. The method for manufacturing a generator according to claim 1, characterized in that, The flexible elastomer contains two or more of the aforementioned micro thermoelectric devices connected in series.
3. The method for manufacturing a generator according to claim 1, characterized in that, The method for laying out several pairs of semiconductor thermoelectric fiber units and arranging the P-type semiconductor thermoelectric fiber units (1) and the N-type semiconductor thermoelectric fiber units (2) in a preset arrangement to form a single-layer P / N or N / P alternating first thermoelectric sheet (3) and second thermoelectric sheet (4) is as follows: The P-type semiconductor thermoelectric fiber unit (1) and the N-type semiconductor thermoelectric fiber unit (2) are laid out in a preset arrangement of P / N / P / N / P / N and N / P / N / P / N / P respectively, and then encapsulated with epoxy resin to form the first thermoelectric sheet (3) and the second thermoelectric sheet (4) of the single layer of alternating P / N or N / P.
4. The method for manufacturing a generator according to claim 3, characterized in that, In the micro thermoelectric block (6), the logarithmic calculation formula for the semiconductor thermoelectric fiber unit is as follows: ; in, The logarithm of the semiconductor thermoelectric fiber unit; The designed power output of the generator; The number of miniature thermoelectric blocks (6) in the generator; The resistivity of the N-type semiconductor thermoelectric fiber unit; The resistivity of the P-type semiconductor thermoelectric fiber unit; The length of the semiconductor thermoelectric fiber unit; The radius of the semiconductor thermoelectric fiber unit; The total Seebeck coefficient for P-type semiconductor thermoelectric fiber units and N-type semiconductor thermoelectric fiber units; The temperature difference between the two ends of the micro thermoelectric block (6) is denoted as .
5. The method for manufacturing a generator according to claim 4, characterized in that, The step of forming conductive electrodes (8) at both ends of the micro thermoelectric block (6) includes: A mask template (7) is made according to the design shape of the conductive electrode (8) and fixed at both ends of the micro thermoelectric block (6) to define the forming area of the conductive electrode (8); A transition layer metal film is formed in the forming area of the conductive electrode (8) at both ends of the micro thermoelectric block (6) by magnetron sputtering. Then, a copper electrode film is formed on the transition layer metal film by electroplating. The mask is removed to obtain the conductive electrode (8).
6. The method for manufacturing a generator according to claim 5, characterized in that, The mask (7) is a polyimide film.
7. The method for manufacturing a generator according to claim 6, characterized in that, Before magnetron sputtering at both ends of the micro thermoelectric block (6), the two ends of the micro thermoelectric block (6) are polished.
8. The method for manufacturing a generator according to claim 1, characterized in that, Both the P-type semiconductor thermoelectric fiber unit (1) and the N-type semiconductor thermoelectric fiber unit (2) include a Bi2Te3 fiber core and a glass cladding.
9. The method for manufacturing a generator according to claim 1, characterized in that, The flexible elastomer is SEBS thermoplastic elastomer.