A high-sensitivity MEMS flow sensor and a manufacturing method thereof

By employing a multi-pair symmetrical distribution structure with alternating thermopile and heater in the MEMS flow sensor, the problems of low heat exchange efficiency and insufficient information capture capability in the prior art are solved, and high sensitivity and high signal-to-noise ratio flow measurement are achieved.

CN122084053BActive Publication Date: 2026-07-07SHANDONG UNIV
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Patent Information

Application Number
CN202610550362.0
Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
Filing Date
2026-04-24
Publication Date
2026-07-07
Estimated Expiration
2046-04-24

AI Technical Summary

Technical Problem

Existing thermal MEMS flow sensors lack sensitivity in micro-flow measurement scenarios, mainly due to the low heat exchange efficiency and insufficient information capture capability caused by the thermal field construction and signal acquisition method of the single heater-single thermopile structure.

Method used

A multi-pair symmetrical distribution structure with alternating thermopile and heater is adopted. The longitudinal heat conduction is blocked by the porous silicon region, which enhances the heat and fluid exchange efficiency. Distributed parallel detection and signal spatial integration are realized by connecting the thermopile array in series.

Benefits of technology

It significantly improves the flow meter's measurement sensitivity and anti-interference capability, enhances the signal-to-noise ratio and measurement reliability, and is suitable for large-scale mass production.

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Abstract

The application relates to a high-sensitivity MEMS flow sensor and a manufacturing method thereof, which comprises a sensor chip, a metal base and a measuring flow channel, wherein the sensor chip comprises: a substrate, a porous silicon region is formed in the substrate; a first dielectric layer is formed on the upper surface of the substrate and the porous silicon region; a heating resistor array is formed on the upper surface of the first dielectric layer and directly above the porous silicon region; a thermocouple array is formed on the upper surface of the first dielectric layer and directly above the porous silicon region, and the thermocouple array and the heating resistor array are alternately arranged along the gas flow channel direction; an electrically isolated layer covers the heating resistor array and the thermocouple array; a metal interconnection structure is formed on the upper surface of the electrically isolated layer and connected with the thermocouple array; an electrode is connected with the metal interconnection structure; and a second dielectric layer covers the electrically isolated layer and the metal interconnection structure. The application adopts a plurality of pairs of symmetric distribution structures of alternately arranged thermocouples and heaters, and the measurement sensitivity of the flow meter is significantly improved.
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