Power Module

Abstract

The present invention provides a power module. The power module includes: a substrate on which at least one chip is mounted; power leads connected to the substrate to supply power to the chip or output power converted by the chip; a metal layer electrically connected to the chip and the power leads to form a current loop; and a molded portion surrounding at least a portion of the outer surfaces of the substrate, the power leads and the metal layer, such that the chip is embedded therein.

Description

[0001] Cross-reference to related applications

[0002] This application claims the benefit of priority to Korean Patent Application No. 10-2024-0166367, filed on November 20, 2024, with the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] This invention relates to a power module. Background Technology

[0004] Recently, with increasing environmental concerns, there has been a rise in environmentally friendly vehicles equipped with electric motors as their power source. These environmentally friendly vehicles are also known as electric vehicles, with representative examples including electric vehicles (EVs) and hybrid electric vehicles (HEVs). Inverters have been used as a core component for power control, influencing the performance and efficiency of these vehicles.

[0005] An inverter is a device that converts direct current (DC) electricity into alternating current (AC) electricity and can drive an electric motor when receiving power from a high-voltage battery. An inverter includes a power module as its core component. The power module handles high voltage and current to perform power conversion.

[0006] Based on the cooling method, power modules can be divided into single-sided cooling power modules and double-sided cooling power modules. A single-sided cooling power module may have a current loop formed on the lower substrate and a separate cooling device connected to the lower substrate and exposed to the outside to perform cooling. Summary of the Invention

[0007] One aspect of the present invention is to provide a power module that is advantageous for miniaturization and has improved electrical characteristics.

[0008] Another aspect of the present invention is to provide a power module that can reduce manufacturing costs.

[0009] According to one aspect of the present invention, a power module includes: a substrate on which at least one chip is mounted; power leads connected to the substrate to supply power to the chip or output power converted by the chip; a metal layer electrically connected to the chip and the power leads to form a current loop; and a molding portion surrounding at least a portion of the outer surfaces of the substrate, the power leads and the metal layer, such that the chip is embedded therein.

[0010] According to another aspect of the invention, a power module includes: a substrate on which a chip is mounted; power leads connected to the substrate to supply power to the chip; a metal layer electrically connected to the chip and the power leads to form a current loop and having at least one through-hole formed therein; and a molding portion configured to surround at least a portion of the outer surfaces of the substrate, the power leads and the metal layer, such that the chip is embedded therein. Attached Figure Description

[0011] The above and other aspects, features and advantages of the present invention will be understood from the following detailed description taken in conjunction with the accompanying drawings.

[0012] Figure 1 This is a schematic cross-sectional view of a power module according to an embodiment of the present invention.

[0013] Figure 2 This is a schematic perspective view of a metal layer disposed in a power module according to an embodiment of the present invention.

[0014] Figure 3 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention.

[0015] Figure 4 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention.

[0016] Figure 5 This is a schematic perspective view of a metal layer disposed in a power module according to another embodiment of the present invention.

[0017] Figure 6 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention.

[0018] Figure 7 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention.

[0019] Figure 8 This is a schematic perspective view of a metal layer disposed in a power module according to another embodiment of the present invention.

[0020] Figure 9 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention.

[0021] Figure 10 This is a schematic perspective view of a metal layer disposed in a power module according to another embodiment of the present invention. Detailed Implementation

[0022] While the invention may be modified in various ways and taken in various alternative forms, its specific embodiments are shown in the accompanying drawings and described in detail herein. However, it is not intended to limit the invention to the specific forms disclosed, but rather the invention is intended to cover modifications, equivalents, and alternatives that fall within the spirit and scope of the invention.

[0023] It will be understood that although the terms “first,” “second,” and / or similar terms may be used herein to describe various elements, these elements may not be limited by these terms. These terms are used to distinguish one element from another. For example, a first element may be referred to as a second element, and a second element may similarly be referred to as a first element, without departing from the scope of the invention. As used herein, the term “and / or” includes a combination of one or more associated enumerations.

[0024] Terms such as “unit,” “component,” and “part” can be used to describe various components, but these components are not limited by these terms. The aforementioned terms can refer to physically / visually distinct components, and to a part of a function or component, even if the corresponding part is not (e.g., clearly) divided.

[0025] The terminology used herein to describe embodiments of the invention is not intended to limit the scope of the invention. The articles “a” and “an” are singular because they have a single indicator; however, the use of the singular form in this document may not exclude the presence of more than one indicator. In other words, unless the context otherwise requires, elements of the invention referred to in the singular form may be one or more. It will be further understood that the terms “comprising,” “including,” “containing,” and / or “comprising” as used herein specify the presence of stated features, values, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, values, steps, operations, elements, components, and / or groups thereof.

[0026] Unless otherwise provided, the terms used herein, including technical and scientific terms, have the same meaning as understood by one of ordinary skill in the art to which this invention pertains. These terms, such as those in commonly used dictionaries, may be interpreted as having the same meaning as in the context of the relevant art, and unless provided in this application, they should not be interpreted as having an ideal or overly formal meaning.

[0027] In the following description, the terms "upper," "lower," "upper surface," "lower surface," "bottom," and / or similar terms used with respect to direction are generally described based on the illustrations in the accompanying drawings. Embodiments of the invention will be described below with reference to the accompanying drawings.

[0028] Figure 1This is a schematic cross-sectional view of a power module according to an embodiment of the present invention. Figure 2 This is a schematic perspective view of a metal layer disposed in a power module according to an embodiment of the present invention, and Figure 3 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention.

[0029] Reference Figure 1 According to an embodiment of the present invention, the power module 1 may include a substrate 100, power leads 200, a metal layer 300, and a molding portion 400.

[0030] The power module 1 according to an embodiment of the present invention may correspond to an insulated power module including an insulating layer on the substrate 100 or a non-insulated power module (e.g., without an insulating layer). The difference between an insulated power module and a non-insulated power module lies in whether the substrate on which the chip is mounted includes an insulating layer, and other components may be the same. In the following description, an insulated power module including an insulating layer on the substrate 100 will be used as an example.

[0031] The substrate 100 may include an insulating layer 110, an inner metal layer 120, and an outer metal layer 130. The insulating layer 110 may include a polymer resin. For example, the insulating layer 110 may be plate-shaped. The inner metal layer 120 may be disposed on the upper surface of the insulating layer 110. Multiple circuit lines may be disposed on the inner metal layer 120. The circuit lines of the inner metal layer 120 may provide a circuit pattern. The circuit lines of the inner metal layer 120 may be connected to power leads 200 or signal leads (not shown). The inner metal layer 120 may be formed of a conductor with high conductivity. For example, the inner metal layer 120 may include copper (Cu). The outer metal layer 130 may be disposed on the lower surface of the insulating layer 110. At least a portion of the outer metal layer 130 may be exposed on the outer surface of the molding portion 400. A separate cooling channel (not shown) may be connected to the exposed portion of the outer metal layer 130. When the chip 140 mounted on the substrate 100 operates, it generates heat, which can be transferred to the outer metal layer 130 of the substrate 100. The heat generated by the chip 140 can be released outward through the outer metal layer 130. For example, the power module 1 can correspond to a single-sided cooling power module.

[0032] At least one chip 140 may be mounted on substrate 100. Chip 140 may be electrically connected to the internal metal layer 120 of substrate 100. Chip 140 may include at least one of an insulated-gate bipolar transistor (IGBT), a compound semiconductor (SiC), a shunt circuit, a silicon controlled rectifier (SCR), a MOSFET, a power transistor, a MOS transistor, a power rectifier, a power regulator, or a diode. When multiple chips 140 are provided, at least some of the multiple chips 140 may be electrically connected to metal layer 300.

[0033] A spacer 150 can be provided between the metal layer 300 and the chip 140. The spacer 150 can support the metal layer 300, allowing the metal layer 300 to be disposed above the substrate 100. The spacer 150 can separate the metal layer 300 from the substrate 100 and the chip 140. The spacer 150 can electrically connect the metal layer 300 to the chip 140 or electrically connect the metal layer 300 to the substrate 100. Furthermore, the spacer 150 can be configured as a conductive block. The conductive block can be a rigid body that guides electricity, such as a copper block or a PCB.

[0034] Power lead 200 can be connected to substrate 100. Power lead 200 can be configured to supply power to chip 140 mounted on substrate 100 or output power converted by chip 140. Power lead 200 may include, for example, input terminals connected to a high-voltage battery to receive direct current (DC) and supply DC to chip 140, and output terminals to output alternating current (AC) converted by chip 140. The input terminals may correspond to at least one positive terminal and one negative terminal.

[0035] The power supply lead 200 can correspond to one of the negative terminal, the positive terminal, and the output terminal. Meanwhile, although not shown in the figure, signal leads for transmitting control signals to the chip 140 can be connected to the substrate 100.

[0036] The metal layer 300 may be spaced apart from the substrate 100. The metal layer 300 may be electrically connected to the chip 140 and the power lead 200 to form a current loop (CL). Here, the current loop CL may refer to the path taken by the current input from an external source through each component inside the power module 1 and output to the outside.

[0037] The metal layer 300 can be formed of conductive components, such as low-temperature co-fired ceramic (LTCC), printed circuit board (PCB), or metal. In addition to the substrate 100, the metal layer 300 can serve as an additional current path to improve the electrical characteristics of the power module 1. In other words, besides the internal metal layer 120 of the substrate 100, the metal layer 300 can provide an additional current path, thereby simplifying the current loop of the power module 1 and improving its electrical characteristics. Since the power module 1 according to an embodiment of the present invention utilizes the metal layer 300 to form an additional current path, the size of the substrate 100 can be reduced, thereby achieving miniaturization and reducing manufacturing costs.

[0038] Reference Figure 2 The metal layer 300 may include, for example, a substrate corresponding portion 310 and a lead corresponding portion 320. The substrate corresponding portion 310 may be arranged to face the substrate 100. The substrate corresponding portion 310 may be embedded inside the molding portion 400. The lead corresponding portion 320 may protrude from one (e.g., one) end of the substrate corresponding portion 310 and at least a portion thereof may be exposed to the outside of the molding portion 400. The substrate corresponding portion 310 and the lead corresponding portion 320 may be configured as a single unit. The width D1 of the lead corresponding portion 320 may be smaller than the width D2 of the substrate corresponding portion 310. At least a portion of the lead corresponding portion 320 may be exposed to the outside of the molding portion 400 and connected to an external power source.

[0039] Metal layer 300 may correspond to one of a positive terminal, a negative terminal, and an output terminal. Power lead 200 may form a current loop with metal layer 300. For example, if metal layer 300 is a positive terminal, power lead 200 may include at least one negative terminal. If metal layer 300 is a negative terminal, power lead 200 may include at least one positive terminal. If metal layer 300 is an output terminal, power lead 200 may include both a positive and a negative terminal.

[0040] The spacer 150 can connect the substrate corresponding portion 310 to the chip 140. When the metal layer 300 is connected to the upper surface of the chip 140 through the spacer 150, the current loop CL can be formed via the power lead 200, the substrate 100, the chip 140, the spacer 150 and the metal layer 300.

[0041] The molding portion 400 can form the exterior of the power module 1. The molding portion 400 can be configured to surround at least a portion of the outer surface of the metal layer 300, the power lead 200, and the substrate 100. For example, the molding portion 400 can expose the outer metal layer 130 of the substrate 100, such that one (e.g., one) end of the power lead 200 and one (e.g., one) end of the metal layer 300 are exposed to the outside (e.g., exposed to the molding portion 400). The chip 140 can be embedded in the molding portion 400. The molding portion 400 can be formed of, for example, epoxy molding compound (EMC) or silicone (Sigel).

[0042] Reference Figure 3 The metal layer 300 may not be connected to the upper surface of the chip 140, but can be connected to the substrate 100 via a spacer 150. The spacer 150 can support the metal layer 300, allowing it to be disposed above the substrate 100. The metal layer 300 may include a substrate counterpart 310 disposed facing the substrate 100 and embedded within the molding portion 400, and a lead counterpart 320 protruding from one (e.g., one) end of the substrate counterpart 310 and at least partially exposed to the outside of the molding portion 400. The spacer 150 can electrically and physically connect the substrate counterpart 310 to the substrate 100. The substrate counterpart 310 can be connected to the chip 140 via a wire W. Figure 3 The power module 1 shown is Figure 1 The power module 1 shown is essentially the same; however, the metal layer 300 is connected to the substrate 100 via spacer 150, and the metal layer 300 and the chip 140 are connected by wires W.

[0043] Figure 4 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention. Figure 5 This is a schematic perspective view of a metal layer disposed in a power module according to another embodiment of the present invention, and Figure 6 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention.

[0044] Reference Figure 4 According to an embodiment of the present invention, the power module 1 may include a substrate 100, power leads 200, a metal layer 300, and a molding portion 400. Figure 4 The power module 1 shown in the embodiment of the present invention and Figure 1 The power modules shown are substantially the same; however, the shape and connection configuration of the metal layer 300 are different. Therefore, detailed descriptions of the same components may be omitted and will be restated in at least a portion of the description herein.

[0045] continue Figure 4The substrate 100 may include an insulating layer 110, an inner metal layer 120, and an outer metal layer 130. At least one chip 140 may be mounted on the substrate 100. The chip 140 may be electrically connected to the inner metal layer 120 of the substrate 100. The chip 140 may convert DC power supplied through power lead 200 into AC power. The chip 140 may be connected to the substrate 100 using a wire W. The chip 140 may be electrically connected to circuit lines formed in the inner metal layer 120 using the wire W. At least a portion of the wire W may be disposed in a via 310a of the metal layer 300.

[0046] Power lead 200 can be connected to substrate 100. Power lead 200 can be configured to supply power to chip 140 mounted on substrate 100 or output power converted by chip 140. One (e.g., one) end of power lead 200 can be connected to substrate 100 inside molding section 400, while the other (e.g., other) end can be exposed outside molding section 400.

[0047] The molding portion 400 can form the exterior of the power module 1. The molding portion 400 can be configured to surround at least a portion of the outer surfaces of the substrate 100, the power lead 200, and the metal layer 300. For example, the molding portion 400 can expose the outer metal layer 130 of the substrate 100, one (e.g., one) end of the power lead 200, and one (e.g., one) end of the metal layer 300 to the outside. The chip 140 can be embedded inside the molding portion 400.

[0048] The metal layer 300 may be spaced apart from the substrate 100. The metal layer 300 may be electrically connected to the chip 140 and the power lead 200 to form a current loop CL. The metal layer 300 may be provided with conductive components, such as LTCC, PCB, or metal. The metal layer 300 may serve as an additional current path to improve the electrical characteristics of the power module 1. The metal layer 300 may have a side connected to the chip 140. For example, the metal layer 300 may be connected to a surface of the chip 140 that is not facing the substrate 100. When the metal layer 300 is connected to the chip 140, the current loop CL may be formed via the power lead 200, the substrate 100, the chip 140, and the metal layer 300.

[0049] Reference Figure 5 The metal layer 300 may include a substrate corresponding portion 310 and a lead corresponding portion 320. The substrate corresponding portion 310 may be configured to face the substrate 100. The substrate corresponding portion 310 may be embedded inside the molding portion 400. The lead corresponding portion 320 may be configured to protrude from one (e.g., one) side of the substrate corresponding portion 310.

[0050] At least one via 310a may be provided within the corresponding portion 310 of the substrate. The via 310a may be configured to prevent contact between the wire W and the metal layer 300 during wire bonding of the chip 140. The via 310a can prevent short circuits from occurring due to contact between the metal layer 300 and the wire W. The number, position, and shape of the via 310a may vary depending on the number and position of the chips 140 mounted on the substrate 100. That is, the via 310a may be modified into various shapes such that the shape corresponds to a configuration that can prevent short circuits between the metal layer 300 and the wire W.

[0051] Reference Figure 6 The metal layer 300 may not be connected to the upper surface of the chip 140, but can be connected to the substrate 100 via the spacer 150. The spacer 150 can support the metal layer 300, allowing the metal layer 300 to be disposed above the substrate 100. When the metal layer 300 is connected to the substrate 100 via the spacer 150, a current loop CL can be formed via the power lead 200, the substrate 100, the chip 140, the spacer 150, and the metal layer 300.

[0052] Figure 7 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention. Figure 8 This is a schematic perspective view of a metal layer disposed in a power module according to another embodiment of the present invention.

[0053] Reference Figure 7 According to another embodiment of the present invention, the power module 1 may include a substrate 100, power leads 200, a metal layer 300 and a molding portion 400. Figure 7 The power module 1 shown is Figure 1 The power modules shown are substantially the same; however, the shape and connection configuration of the metal layer 300 are different. Therefore, detailed descriptions of the same components may be omitted and at least a portion of the description herein is provided.

[0054] The substrate 100 may include an insulating layer 110, an inner metal layer 120, and an outer metal layer 130. At least one chip 140 may be mounted on the substrate 100. The chip 140 may be electrically connected to the inner metal layer 120 of the substrate 100. The chip 140 may be connected to the substrate 100 using a wire W. The chip 140 may convert DC power supplied through power lead 200 into AC power.

[0055] Power lead 200 can be connected to substrate 100. Power lead 200 can be configured to supply power to chip 140 mounted on substrate 100 or output power converted by chip 140. One (e.g., one) end of power lead 200 can be connected to substrate 100 inside molding section 400, while the other (e.g., other) end can be exposed outside molding section 400.

[0056] Metal layer 300 may be spaced apart from substrate 100. Metal layer 300 may be electrically connected to chip 140 and power lead 200 to form current loop CL. Metal layer 300 may be provided with conductive components, such as LTCC, PCB, or metal. Metal layer 300 may serve as an additional current path, thereby improving the electrical characteristics of power module 1. Spacer 150 may support metal layer 300. For example, spacer 150 may support metal layer 300 by having one (e.g., one) end connected to the upper surface of chip 140 and the other (e.g., another) end connected to metal layer 300.

[0057] Reference Figure 8 The metal layer 300 may include a substrate corresponding portion 310 and a bent portion 330. The substrate corresponding portion 310 may be spaced apart from the substrate 100 and arranged to face the substrate 100. The bent portion 330 may be bent from one (e.g., one) end of the substrate corresponding portion 310 toward the substrate 100. The metal layer 300 may be formed in an integral "L" shape. The bent portion 330 may be electrically connected to the substrate 100 at the bent end. The bent portion 330 may be electrically connected to the power lead 200 via the substrate 100. In this case, the bent portion 330 may also be (e.g., directly) connected to the power lead 200. The substrate corresponding portion 310 may be connected to the chip 140 via a spacer 150. One (e.g., one) end of the spacer 150 may be connected to the upper surface of the chip 140, and the other (e.g., the other) end may be connected to the lower surface of the substrate corresponding portion 310. However, the spacer 150 may be omitted. In other words, the substrate corresponding portion 310 can also be (e.g., directly) connected to a surface of the chip 140 that does not face the substrate 100, i.e., the upper surface. The substrate corresponding portion 310 can be electrically connected to the chip 140. Figure 7 and Figure 8 In the embodiment shown, the metal layer 300 may not be exposed to the outside of the molding portion 400, but may be embedded inside the molding portion 400.

[0058] exist Figure 7 and Figure 8In the illustrated embodiment, the metal layer 300 may have the same potential as the power lead 200. In other words, the power lead 200 may include a positive terminal, a negative terminal, and an output terminal, and the metal layer 300 may form an extension path of one of the positive terminal, negative terminal, or output terminal of the power lead 200. Therefore, the metal layer 300 may have the same potential as one of the positive terminal, negative terminal, or output terminal.

[0059] Figure 9 This is a schematic cross-sectional view of a power module according to another embodiment of the present invention. Figure 10 This is a schematic perspective view of a metal layer disposed in a power module according to another embodiment of the present invention.

[0060] Reference Figure 9 According to another embodiment of the present invention, the power module 1 may include a substrate 100, power leads 200, a metal layer 300 and a molding portion 400. Figure 9 The power module 1 shown in the embodiment of the present invention and Figure 1 The power modules shown are substantially the same; however, the shape and connection configuration of the metal layer 300 are different. Therefore, detailed descriptions of the same components may be omitted and at least a portion of the description herein is provided.

[0061] The substrate 100 may include an insulating layer 110, an inner metal layer 120, and an outer metal layer 130. At least one chip 140 may be mounted on the substrate 100. The chip 140 may be electrically connected to the inner metal layer 120 of the substrate 100. The chip 140 may convert DC power supplied through power lead 200 into AC power. The chip 140 may be connected to the substrate 100 using a wire W. The chip 140 may be electrically connected to circuit lines formed in the inner metal layer 120 using the wire W. At least a portion of the wire W may be disposed in a via 310a of the metal layer 300.

[0062] Power lead 200 can be connected to substrate 100. Power lead 200 can be configured to supply power to chip 140 mounted on substrate 100 or output power converted by chip 140. One (e.g., one) end of power lead 200 can be connected to substrate 100 inside molding section 400, while the other (e.g., other) end can be exposed outside molding section 400.

[0063] The metal layer 300 may be spaced apart from the substrate 100. The metal layer 300 may be embedded inside the molding portion 400. The metal layer 300 may be electrically connected to the chip 140 and the power lead 200 to form a current loop CL. The metal layer 300 may be provided with conductive components, such as LTCC, PCB, or metal. The metal layer 300 may serve as an additional current path to improve the electrical characteristics of the power module 1. One (e.g., one) side of the metal layer 300 may be connected to the chip 140. For example, the metal layer 300 may be connected to one (e.g., one) surface of the chip 140 that does not face the substrate 100.

[0064] Reference Figure 10 The metal layer 300 may include a substrate corresponding portion 310 and a bent portion 330. The substrate corresponding portion 310 may be configured to face the substrate 100. The substrate corresponding portion 310 may be connected to the upper surface of the chip 140. The bent portion 330 may be bent from one end of the substrate corresponding portion 310 toward the substrate 100. The metal layer 300 may be configured as an integral "L" shape. The bent end of the bent portion 330 may be electrically connected to the substrate 100. The bent portion 330 may be electrically connected to the power lead 200 via the substrate 100. In this case, the bent portion 330 may also be (e.g., directly) connected to the power lead 200.

[0065] At least one via 310a may be provided within the corresponding portion 310 of the substrate. The via 310a may be configured to prevent contact between the wire W and the metal layer 300 during wire bonding of the chip 140. The via 310a can prevent short circuits due to contact between the metal layer 300 and the wire W. The number, position, and shape of the via 310a may vary depending on the number and position of the chips 140 mounted on the substrate 100. That is, the via 310a may be modified into various shapes such that the shape corresponds to a configuration that can prevent short circuits between the metal layer 300 and the wire W.

[0066] exist Figure 9 and Figure 10 In the illustrated embodiment, the metal layer 300 may have the same potential as the power lead 200. In other words, the power lead 200 may include a positive terminal, a negative terminal, and an output terminal, and the metal layer 300 may form an extension path of one of the positive terminal, negative terminal, or output terminal of the power lead 200. Therefore, the metal layer 300 may have the same potential as one of the positive terminal, negative terminal, or output terminal.

[0067] The power module according to an embodiment of the present invention can improve electrical characteristics.

[0068] The power module according to an embodiment of the present invention can be provided for miniaturization.

[0069] The power module according to an embodiment of the present invention can reduce manufacturing costs.

[0070] Although embodiments have been shown and described above, it will be apparent to those skilled in the art that modifications and alterations may be made without departing from the scope of the invention as provided by the claims.

Claims

1. A power module, comprising: A substrate on which at least one chip is mounted; Power leads are connected to the substrate to supply power to the chip or output power converted by the chip; A metal layer electrically connected to the chip and the power leads to form a current loop; as well as A molding portion that surrounds at least a portion of the outer surface of the substrate, the power leads, and the metal layer to embed the chip therein.

2. The power module according to claim 1, wherein, The chip is configured as a plurality of chips, and at least one of the plurality of chips is electrically connected to the metal layer.

3. The power module according to claim 1, wherein, When the metal layer is a positive terminal, the power lead includes at least one negative terminal; when the metal layer is a negative terminal, the power lead includes at least one positive terminal; and when the metal layer is an output terminal, the power lead includes both a positive terminal and a negative terminal.

4. The power module according to claim 1, wherein, The power lead includes a positive terminal, a negative terminal, and an output terminal, and the metal layer forms an extension path of at least one of the positive terminal, the negative terminal, or the output terminal.

5. The power module according to claim 1, wherein, The metal layer includes: A substrate corresponding portion, which is arranged to face the substrate and embedded inside the molding portion; and The lead-corresponding portion protrudes from the end of the substrate-corresponding portion and is at least partially exposed to the outside of the molding portion.

6. The power module according to claim 5, wherein, Spacers are provided to connect the corresponding portion of the substrate to the chip, and the current loop is formed by the power lead, the substrate, the chip, the spacers, and the metal layer.

7. The power module according to claim 5, wherein, Spacers are provided to connect the corresponding portion of the substrate to the substrate, and the corresponding portion of the substrate is connected to the chip via wires.

8. The power module according to claim 1, wherein, The metal layer includes: Substrate corresponding portion, which is arranged to face the substrate; and A bent portion, which bends from the end of the corresponding portion of the substrate and connects to the end of the substrate. The metal layer is embedded inside the molding section.

9. The power module according to claim 8, wherein, Spacers are provided to connect the corresponding portion of the substrate to the chip.

10. The power module according to claim 8, wherein, The corresponding portion of the substrate is connected to the surface of the chip that does not face the substrate.

11. A power module, comprising: A substrate on which chips are mounted; A power lead is connected to the substrate to supply power to the chip; A metal layer electrically connected to the chip and the power leads to form a current loop, wherein the metal layer has at least one via formed therein; as well as A molding section is configured to surround at least a portion of the outer surface of the substrate, the power leads, and the metal layer to embed the chip within the molding section.

12. The power module according to claim 11, wherein, The chip is connected to the substrate using wires, and at least a portion of the wires is disposed in the via.

13. The power module according to claim 12, wherein, Spacers are provided to connect the metal layer to the substrate.

14. The power module according to claim 12, wherein, The metal layer is attached to the surface of the chip that is not facing the substrate.

15. The power module according to claim 12, wherein, The metal layer includes: A substrate corresponding portion, arranged facing the substrate, having the through hole formed inside the substrate corresponding portion, and embedded inside the molding portion; and The lead-corresponding portion protrudes from the end of the substrate-corresponding portion and is at least partially exposed to the outside of the molding portion.

16. The power module according to claim 12, wherein, The metal layer includes: A substrate corresponding portion, arranged facing the substrate, having the through-hole formed inside the substrate corresponding portion, and connected to the non-substrate surface of the chip; and A bent portion, which bends from the end of the corresponding portion of the substrate and has an end connected to the substrate. The metal layer is embedded inside the molding section.

17. A power module, comprising: A substrate on which at least one chip is mounted. The substrate includes: Insulating layer; An inner metal layer is disposed on the surface of the insulating layer; and An outer metal layer is disposed on the other surface of the insulating layer; Power leads are connected to the substrate to supply power to the chip or output power converted by the chip; A metal layer electrically connected to the chip and the power leads to form a current loop; and A molding portion, which surrounds at least a portion of the outer surface of the substrate, the power leads, and the metal layer, for embedding the chip within the molding portion, and At least a portion of the outer metal layer is exposed to the outside of the molded portion.

18. The power module according to claim 17, wherein, The chip is connected to the substrate using wires.

19. The power module according to claim 17, wherein, The metal layer is provided with conductive components, which are LTCC, PCB or metal.

20. The power module according to claim 17, wherein, The chip is configured as a plurality of chips, and at least one of the plurality of chips is electrically connected to the metal layer.

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