Compositions, thin films, optoelectronic devices, and methods of making optoelectronic devices

Abstract

The application discloses a composition, a film, a photoelectric device and a preparation method of the photoelectric device, and relates to the technical field of photoelectric devices. The composition comprises a semiconductor material and an ionic liquid material, the semiconductor material comprises one or more of an organic compound and a first metal oxide, the ionic liquid material comprises at least one imidazole dicyanamide salt compound, the composition has good solution processing performance, conductivity and performance stability, the composition can be applied to preparation of a photoelectric device, and is beneficial to improving device efficiency, device service life and performance stability of the photoelectric device.

Description

Technical Field

[0001] This application relates to the field of organic materials technology, specifically to a composition, a thin film, an optoelectronic device, and a method for preparing the optoelectronic device. Background Technology

[0002] Both organic compounds and metal oxides are materials used in the fabrication of optoelectronic devices. However, the poor conductivity of organic compounds limits the performance improvement of optoelectronic devices containing them. Furthermore, some organic compounds are hygroscopic (e.g., (3,4-ethylenedioxythiophene):poly(styrenesulfonic acid)), leading to poor film quality in solution-based methods.

[0003] Metal oxides have a large number of defect states, which makes them prone to aggregation in solution, resulting in poor film quality in solution-based methods. This negatively impacts the performance of optoelectronic devices that use metal oxides. Summary of the Invention

[0004] To address the shortcomings of existing technologies, this application provides a composition, a thin film, an optoelectronic device, and a method for preparing the optoelectronic device.

[0005] In a first aspect, this application provides a composition comprising a semiconductor material and an ionic liquid material, wherein the semiconductor material comprises one or more of an organic compound and a first metal oxide, and the ionic liquid material comprises at least one compound with the structure shown in general formula (I) below:

[0006]

[0007] In general formula (I), R1 to R5 are each independently selected from - an unsubstituted or substituted C1 to C30 aliphatic chain hydrocarbon group, an unsubstituted or substituted C1 to C30 aliphatic chain hydroxyl group, an unsubstituted or substituted aliphatic cyclic hydrocarbon group having 3 to 30 ring atoms, an unsubstituted or substituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, an unsubstituted or substituted aryl group having 6 to 30 ring atoms, an unsubstituted or substituted heteroaryl group having 5 to 30 ring atoms, or a combination of these groups;

[0008] aryl, unsubstituted or heteroaryl groups having 5 to 30 ring atoms substituted with at least one R, or combinations of these groups;

[0009] Each time R appears, it is independently selected from -D, aliphatic chain hydrocarbon groups of C1 to C20, aliphatic chain hydroxyl groups of C1 to C20, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, and *-NR. a R b Halogen groups, hydroxyl groups, carboxyl groups, nitro groups, sulfonic acid groups, aldehyde groups, Mercapto, cyano, or combinations of these groups; R a R b R c and R d Each group is independently selected from -H, -D, C1-C20 aliphatic chain hydrocarbon groups, C1-C20 aliphatic chain hydroxyl groups, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, or combinations of these groups; R e Selected from C1 to C20 aliphatic subchain hydrocarbon groups, C1 to C20 aliphatic subchain hydrocarbon oxygen groups, aliphatic subcyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, arylene groups with 6 to 20 ring atoms, heteroarylene groups with 5 to 20 ring atoms, or combinations of these groups;

[0010] * indicates a connection point.

[0011] In a second aspect, this application provides a thin film, the material of which comprises the composition described in the first aspect, and / or the thin film is prepared using the composition described in the first aspect.

[0012] Thirdly, this application provides an optoelectronic device, comprising:

[0013] The anode and cathode are arranged opposite each other; and

[0014] Multiple functional layers are disposed between the anode and the cathode;

[0015] Wherein, at least one of the plurality of functional layers is made of a material comprising the composition described in the first aspect, and / or at least one of the plurality of functional layers comprises a thin film as described in the second aspect.

[0016] This application provides a composition, a thin film, an optoelectronic device, and a method for preparing the optoelectronic device, which has the following technical advantages:

[0017] In the composition provided in this application, the ionic liquid material can promote the cross-linking of organic compound molecules and has good conductivity, thereby giving the composition including the ionic liquid material and the organic compound good conductivity and solution processing performance; the ionic liquid material can passivate the surface defect state and bulk defect state of the first metal oxide, thereby improving the problem of easy aggregation of the first metal oxide in solution, thus giving the composition including the ionic liquid material and the first metal oxide good solution processing performance and performance stability. Attached Figure Description

[0018] The technical solution and other beneficial effects of this application will become apparent from the following detailed description of specific embodiments in conjunction with the accompanying drawings.

[0019] Figure 1 This is a schematic diagram of the structure of an optoelectronic device provided in an embodiment of this application. Detailed Implementation

[0020] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0021] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those familiar to those skilled in the art. Furthermore, any methods and materials similar to or equivalent to those described herein may be applied to this invention. The preferred embodiments and materials described herein are for illustrative purposes only and do not limit the scope of this application.

[0022] It should be noted that the order of description of the following embodiments is not intended to limit the preferred order of embodiments. The various embodiments of this application may exist in a range format. It should be understood that the description in a range format is merely for convenience and simplicity and should not be construed as a rigid limitation on the scope of the invention. Therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single numerical values ​​within that range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., and single numbers within the range, such as 1, 2, 3, 4, 5, and 6, regardless of the range. Furthermore, whenever a numerical range is indicated herein, it means including any referenced number (fraction or integer) within the indicated range.

[0023] In this application, unless otherwise stated, directional terms such as "upper" and "lower" generally refer to the upper and lower positions of the optoelectronic device in its actual use or operating state, specifically the orientation shown in the accompanying drawings; while "inner" and "outer" refer to the outline of the optoelectronic device. The terms "first," "second," "third," etc., are used merely as indications and do not impose numerical requirements or establish a sequence.

[0024] In this application, descriptions such as "layer A is formed on one side of layer B," "layer A is formed on the side of layer B away from layer C," or similar expressions can mean that layer A is directly formed on one side of layer B or on the side of layer B away from layer C, i.e., layer A and layer B are in direct contact; or they can mean that layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, i.e., other spacer structures can be formed between layer A and layer B. Similarly, "layer A is disposed on one side of layer B" or "layer A is disposed on the side of layer B away from layer C" can mean that layer A and layer B are in direct contact, or that other spacer structures are provided between layer A and layer B; "layer A is disposed between layer B and layer C" can mean that layer A and layer B are in direct contact and layer A and layer C are in direct contact, or layer A and layer B are in direct contact and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and one or more spacer structures are provided between layer A and layer C, or layer A and layer B are provided and layer A and layer C are in direct contact.

[0025] The term "including" means "including but not limited to". The term "and / or" describes the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, or B alone. A and B can be singular or plural. The term "at least one" means one or more, and "more than one" means two or more. The terms "at least one", "at least one of the following", or similar expressions refer to any combination of these items, including any combination of a single or plural type. For example, "at least one of a, b, or c" or "at least one of a, b, and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc, or abc, where a, b, and c can each be a single or multiple type.

[0026] The term "average particle size" refers to the area-average particle size of a particle swarm. Area-average particle size is calculated by dividing the total volume of the particle swarm by its total area, which is the reciprocal of the surface area per unit volume. If an imaginary swarm of particles with uniform size is used to replace the original swarm, and the total volume and area of ​​this imaginary swarm are identical to the original swarm, then the diameter of this imaginary swarm is the area-average particle size of the original swarm. Area-average particle size can be obtained through statistical analysis, using transmission electron microscopy to statistically analyze the particle size of each particle in the swarm.

[0027] The term "aliphatic chain hydrocarbon group" refers to a group obtained by removing a hydrogen atom from an aliphatic hydrocarbon (saturated or unsaturated aliphatic hydrocarbon). It can be an aliphatic straight-chain alkyl group, an aliphatic straight-chain alkenyl group, an aliphatic straight-chain alkynyl group, an aliphatic branched alkyl group, an aliphatic branched alkenyl group, or an aliphatic branched alkynyl group. "C1-C30 aliphatic chain hydrocarbon group" can be, for example, aliphatic chain hydrocarbon groups of C1-C20, C1-C18, C1-C15, C1-C12, C1-C10, C1-C8, C1-C6, or C1-C3. Aliphatic chain hydrocarbon groups can be, for example, C1 alkyl, C2 alkyl, C3 alkyl, C4 alkyl, C5 alkyl, C6 alkyl, C7 alkyl, C8 alkyl, C9 alkyl, or C10 alkyl. Suitable examples of "aliphatic chain hydrocarbon groups" include, but are not limited to, methyl, ethyl, vinyl, ethynyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, 2-ethyloctyl, 2-butyloctyl, 2-hexyloctyl, 3,7-dimethyloctyl, n-nonyl, n-decyl, 2-ethyldecyl, 2-butyldecyl, 2-hexyl Decyl, 2-octyldecyl, n-undecyl, n-dodecyl, 2-ethyldodecyl, 2-butyldodecyl, 2-hexyldodecyl, 2-octyldodecyl, n-tridecyl, n-tetradecyl, n-pentadecanyl, n-hexadecyl, 2-ethylhexadecyl, 2-butylhexadecyl, 2-hexylhexadecyl, 2-octylhexadecyl, n-heptadecyl, n-octadecyl, n-octadecyl, n-heptadecyl, n-octadecyl, n-heptadecyl, n-eicosyl, 2-ethyleicosyl, 2-butyleicosyl, 2-hexyleicosyl, 2-octyleicosyl, n-monodecyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, n-eicosyl, or n-trianecanyl.

[0028] The term "aliphatic chain hydrocarbon group" refers to a group with the general formula *-O-aliphatic chain hydrocarbon group, where * indicates a bonding site and O represents an oxygen atom. Suitable examples include, but are not limited to, methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt), tert-butoxy (-OC(CH3)3 or -OtBu), and n-hexyloxy (-O-C6H). 13 ), n-Decaalkoxy (-OC) 10 H 21 ), or n-dodecyloxy (-OC) 12 H 25 The number of carbon atoms in "C1 to C30 aliphatic chain hydroxyl group" can be, for example, 1 to 20, 1 to 18, 1 to 15, 1 to 10, 1 to 8, 1 to 5, or 1 to 3.

[0029] The term "aliphatic cyclic hydrocarbon group" refers to an aliphatic cyclic hydrocarbon group. "Aliphatic cyclic hydrocarbon groups with 3 to 30 ring atoms" can be, for example, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, 3 to 18 ring atoms, 3 to 16 ring atoms, 3 to 14 ring atoms, 3 to 12 ring atoms, 3 to 10 ring atoms, 3 to 8 ring atoms, 3 to 6 ring atoms, or 3 to 5 ring atoms. The number of ring atoms in an aliphatic cyclic hydrocarbon group can be, for example, 3 to 20, 3 to 18, 3 to 16, 3 to 14, 3 to 10, 3 to 8, or 3 to 5. Suitable examples include, but are not limited to, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl, cycloheptyl, cyclooctyl, or adamantyl.

[0030] The term "aliphatic heterocyclic hydrocarbon group" refers to an aliphatic cyclic hydrocarbon group in which at least one carbon atom is replaced by a non-carbon atom. The non-carbon atom can be one or more of N, O, S, Si, and P atoms. The number of heteroatoms in the aliphatic heterocyclic hydrocarbon group is independently between 1 and 20. "Aliphatic heterocyclic hydrocarbon group with 3 to 30 ring atoms" can be, for example, an aliphatic heterocyclic hydrocarbon group with 3 to 20 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 18 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 16 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 14 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 12 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 10 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 8 ring atoms, an aliphatic heterocyclic hydrocarbon group with 3 to 6 ring atoms, or an aliphatic heterocyclic hydrocarbon group with 3 to 5 ring atoms. The number of carbon atoms in an aliphatic heterocyclic hydrocarbon group can be, for example, 3 to 20, 3 to 18, 3 to 16, 3 to 14, 3 to 10, 3 to 8, or 3 to 5. Suitable examples of aliphatic heterocyclic hydrocarbon groups include, but are not limited to, cyclothioethyl, acridine, or ethylene oxide.

[0031] The term "aryl" refers to a group obtained by removing a hydrogen atom from an aromatic ring compound. It can be a monocyclic aryl, a fused-ring aryl, or a polycyclic aryl, and in the case of a polycyclic ring, at least one of the rings must be an aromatic ring system. "Aryl with 6 to 30 ring atoms" can be, for example, an aryl with 6 to 24 ring atoms, an aryl with 6 to 20 ring atoms, an aryl with 6 to 18 ring atoms, an aryl with 6 to 16 ring atoms, an aryl with 6 to 14 ring atoms, or an aryl with 6 to 10 ring atoms. Suitable examples include, but are not limited to, phenyl, biphenyl, terphenyl, naphthyl, anthracene, phenanthryl, fluoranyl, triphenylene, pyrene, perylene, tetraphenyl, fluorenyl, dinaphthylphenyl, acenaphthyl, and their derivatives. Understandably, multiple aryl groups can also be interrupted by short non-aromatic units (e.g., <10% non-H atoms, such as C, N, or O atoms), specifically acenaphthene, fluorene, or 9,9-diarylfluorene, triarylamine, and diaryl ether systems should also be included in the definition of aryl.

[0032] The term "heteroaryl" refers to an aryl group in which at least one carbon atom is replaced by a non-carbon atom. The non-carbon atom can be one or more of N, O, S, Si, and P atoms, and the number of heteroatoms can be, for example, 1 to 20. "Heteroaryl with 5 to 30 ring atoms" can be, for example, a heteroaryl with 5 to 24 ring atoms, a heteroaryl with 5 to 20 ring atoms, a heteroaryl with 5 to 18 ring atoms, a heteroaryl with 5 to 16 ring atoms, a heteroaryl with 5 to 14 ring atoms, or a heteroaryl with 5 to 10 ring atoms. Suitable examples include, but are not limited to, thiophene, furanyl, pyrrolyl, diazolyl, triazolyl, imidazole, pyridyl, bipyridyl, pyrimidinyl, triazinyl, acridineyl, pyridazinyl, quinolinyl, isoquinolinyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyridopyrimidinyl, pyridopyrazinyl, benzothiophene, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienopyrrolyl, furanolyl, furanolyl, thienofuranyl, benzoisoxazolyl, benzoisothiazolyl, benzoimidazolyl, o-diazonyl, phenanthridine, primidyl, quinazolinone, dibenzothiophene, dibenzofuranyl, or carbazolyl.

[0033] In this application, the single bonds connecting the substituents extend through the corresponding ring, indicating that the substituent can be connected to any position on the ring.

[0034] In this application, "halogen group" or "halogen" represents -Cl, -Br, -F or -I; hydroxyl group represents -OH; carboxyl group represents -COOH; nitro group represents -NO2; sulfonic acid group represents -SO3H; mercapto group represents -SH; cyano group represents *-C≡N.

[0035] In this application, the thickness of the thin film refers to the average thickness of the thin film, and the thickness of a certain functional layer refers to the average thickness of the functional layer. The thickness is obtained by measuring a step tester.

[0036] The terms “combinations thereof,” “any combination thereof,” and “any combination thereof” as used in this application include all suitable combinations of any two or more of the listed items.

[0037] The term “content” as used in this application refers to a percentage by mass.

[0038] This application provides a composition comprising a semiconductor material and an ionic liquid material. The semiconductor material comprises one or more of an organic compound and a first metal oxide, and the ionic liquid material comprises at least one compound with the structure shown in general formula (I) below:

[0039]

[0040] In general formula (I), R1 to R5 are each independently selected from - an unsubstituted or substituted C1 to C30 aliphatic chain hydrocarbon group, an unsubstituted or substituted C1 to C30 aliphatic chain hydroxyl group, an unsubstituted or substituted aliphatic cyclic hydrocarbon group having 3 to 30 ring atoms, an unsubstituted or substituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, an unsubstituted or substituted aryl group having 6 to 30 ring atoms, an unsubstituted or substituted heteroaryl group having 5 to 30 ring atoms, or a combination of these groups.

[0041] Each time R appears, it is independently selected from -D, aliphatic chain hydrocarbon groups of C1 to C20, aliphatic chain hydroxyl groups of C1 to C20, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, and *-NR. a R b Halogen groups, hydroxyl groups, carboxyl groups, nitro groups, sulfonic acid groups, aldehyde groups, Mercapto, cyano, or combinations of these groups; R a R b R c and R d Each group is independently selected from -H, -D, C1-C20 aliphatic chain hydrocarbon groups, C1-C20 aliphatic chain hydroxyl groups, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, or combinations of these groups; R e Selected from C1 to C20 aliphatic subchain hydrocarbon groups, C1 to C20 aliphatic subchain hydrocarbon oxygen groups, aliphatic subcyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, or combinations of these groups; * indicates a linking site.

[0042] In the compositions of this application embodiment, the ionic liquid material includes imidazole cations and cyanamide anions. When the semiconductor material includes an organic compound, the cyanamide anion contains unsaturated bonds, which can promote cross-linking of organic compound molecules, thereby giving the composition including the ionic liquid material and the organic compound good conductivity and solution processing performance. When the semiconductor material includes a first metal oxide, the imidazole groups of the ionic liquid material can tightly bind to the surface of the first metal oxide and penetrate into the bulk phase, thereby passivating the surface defect states and bulk defect states of the first metal oxide, thereby improving the problem of easy aggregation of the first metal oxide in solution, thus giving the composition including the ionic liquid material and the first metal oxide good solution processing performance and performance stability. In addition, based on the excellent conductivity of the ionic liquid material, the composition has good conductivity.

[0043] In some embodiments of this application, in general formula (I), R1 to R5 are each independently selected from unsubstituted or at least R-substituted C1-C20 aliphatic chain hydrocarbon groups, unsubstituted or at least R-substituted C1-C20 aliphatic chain alkyl groups, unsubstituted or at least R-substituted aryl groups with 6 to 14 ring atoms, unsubstituted or at least R-substituted heteroaryl groups with 5 to 14 ring atoms, or combinations of these groups; each time R appears, it is independently selected from -D, C1-C10 aliphatic chain hydrocarbon groups, C1-C10 aliphatic chain alkyl groups, halogen groups, hydroxyl groups, cyano groups, or combinations of these groups. The aryl group with 6 to 14 ring atoms can be, for example, phenyl, naphthyl, or biphenyl, and the heteroaryl group with 5 to 14 ring atoms can be, for example, pyridyl, pyrimidinyl, imidazolyl, or carbazoleyl.

[0044] In order to further improve the solution processing performance of the composition and ensure that the composition has good conductivity, in some embodiments of this application, the mass ratio between the semiconductor material and the ionic liquid material in the composition is 1:(0.01 to 0.1), for example, it can be 1:0.01, 1:0.03, 1:0.05, 1:0.08, 1:0.1 or any range between the two aforementioned values.

[0045] To further increase the spatial contact between the ionic liquid material and the semiconductor material, thereby further improving the degree of cross-linking of organic compound molecules or enhancing the passivation effect of the ionic liquid material on the first metal oxide, in some embodiments of this application, the ionic liquid material includes 1-ethyl-3-methylimidazolium dicyandiamide salt (CAS No. 370865-89-7), 1-butyl-3-methylimidazolium dicyandiamide salt (CAS No. 448245-52-1), 1-(2-hydroxyethyl)-3-methylimidazolium dicyandiamide salt (CAS No. 1186103-47-8), and 1-hydroxyethyl-2,3-dimethylimidazolium dicyandiamide salt. Cyanamide salts (CB111050927), 1-hydroxyethyl-3-methylimidazolium dicyanamide salts (CB211050919), 1-(3-cyanopropyl)-3-methylimidazolium dicyanamide salts (CAS No. 879866-74-7), 1-butyl-2,3-dimethylimidazolium dicyanamide salts (CAS No. 811789-67-0), 1-allyl-3-methylimidazolium dicyanamide salts (CAS No. 917956-73-1), 1-allyl-3-butylimidazolium dicyanamide salts (CB211050898), 1-allyl-3-ethylimidazolium dicyanamide salts (CB311050) 875), 1-Allyl-3-vinylimidazolium dicyandiamide (CB411050913), 1-Vinyl-3-benzylimidazolium dicyandiamide (CB511050910), 1-Vinyl-3-ethylimidazolium dicyandiamide (CB411050872), 1-Vinyl-3-methylimidazolium dicyandiamide (CB83959156), 1-Vinyl-3-butylimidazolium dicyandiamide (CB611050896), 1-Benzyl-3-methylimidazolium dicyandiamide (CAS No. 958445-60-8), 1-Ethoxyethyl-3-methylimidazolium dicyandiamide, 1-Tetradecyl-3 One or more of the following are acceptable choices: 1-methylimidazolium dicyandiamide (CB04925633), 1-dodecyl-3-methylimidazolium dicyandiamide (CB14925630), 1-hexyl-3-methylimidazolium dicyandiamide (CAS No. 927902-57-6), 1-propyl-3-methylimidazolium dicyandiamide (CB72642069), 1-hexadecyl-3-methylimidazolium dicyandiamide (CB74925632), 1-octyl-3-methylimidazolium dicyandiamide (CAS No. 905972-84-1), and 1-decyl-3-methylimidazolium dicyandiamide (CB52642030). It should be noted that when a composition comprising a semiconductor material and the aforementioned ionic liquid material is prepared into a thin film using a solution method, the aforementioned ionic liquid material can undergo strong chemical interactions with the solvent, thereby regulating the film formation kinetics and effectively reducing the surface roughness of the thin film.

[0046] In some embodiments of this application, the organic compounds include poly(3,4-vinyldioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), and polypyrrole (CAS No. 3). 0604-81-0), 3-hexyl-substituted polythiophene (CAS No. 104934-50-1), poly(9-vinylcarbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis(9-carbazole)biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly[bis(4-phenyl)(4-butylphenyl)amine] (abbreviated as Poly-TPD, CAS No. 472960-35-3), 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butyl) Tris(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)] (CAS No. 223569-31-1), 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine (CAS No. 124729-98-2), 4,4',4”-tris(carbazole-9-yl)triphenylamine (TCTA, CAS No. 139092-78-7), 4,4',4’-tris(2-naphthylphenylamino)triphenylamine (CAS No. 185690-41-9) N,N'-Diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (NPB, CAS No. 123847-85-8), N,N'-Diphenyl-N,N'-Di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine (Spiro-TPD, CAS No. 1033035-83-4), N2,One or more of the following: N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobis[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9), and 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobisfluorene (Spiro-omeTAD, CAS No. 207739-72-8).

[0047] To further improve the hole transport performance of the composition, in some embodiments of this application, the semiconductor material is selected from poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], and the ionic liquid material is selected from 1-allyl-3-methylimidazolium dicyanamide, 1-ethyl-3-methylimidazolium dicyanamide, 1-(2-hydroxyethyl)-3-methylimidazolium dicyanamide, 1-(3-cyanopropyl)-3-methylimidazolium dicyanamide, 1-allyl-3-vinylimidazolium dicyanamide, 1-benzyl-3-methylimidazolium dicyanamide, and 1 One or more of octyl-3-methylimidazolium dicyandiamide salts, when the substituent on the imidazole group is alkyl, hydroxyethyl, cyanopropyl, allyl, vinyl, benzyl, etc., can increase the spatial contact volume of ionic liquid molecules, further promoting the cross-linking of semiconductor materials, thereby significantly improving the hole transport performance of the composition. Furthermore, the mass ratio of semiconductor material to ionic liquid material in the composition is 1:(0.01 to 0.05), for example, it can be 1:0.01, 1:0.02, 1:0.03, 1:0.04, 1:0.05, or any two of the aforementioned values. Within the aforementioned range, the conductivity and hole transport performance of the composition can be further improved.

[0048] In some embodiments of this application, the first metal oxide is in the form of nanoparticles, and the average particle size of the first metal oxide is 2nm to 100nm, for example, it can be 2nm, 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm or any two of the aforementioned values.

[0049] In some embodiments of this application, the first metal oxide is an N-type compound, including ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, and Zn. (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x)Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where x represents the molar amount, and 0 < x ≤ 0.5.

[0050] In some embodiments of this application, the semiconductor material is selected from ZnO and Zn (1-x) Mg x One or more of O, wherein the ionic liquid material is selected from one or more of 1-allyl-3-methylimidazolium dicyanamide salt and 1-ethyl-3-methylimidazolium dicyanamide salt, which can effectively passivate ZnO and / or Zn (1-x) Mg x The defects of O can ensure that the composition has good electron transport properties. Furthermore, the mass ratio of semiconductor material to ionic liquid material in the composition is 1:(0.05 to 0.1), for example, it can be 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09, 1:0.1 or any two of the aforementioned values. Within the aforementioned range, the conductivity and electron transport properties of the composition can be further improved.

[0051] In some other embodiments of this application, the first metal oxide is a p-type compound, which includes one or more of the following: oxides of nickel, molybdenum, tungsten, vanadium, chromium, copper, and hafnium.

[0052] In some embodiments of this application, the composition further includes a solvent, with the semiconductor material and ionic liquid material dispersed in the solvent. The solvent includes, but is not limited to, one or more of alkanes, aromatic hydrocarbons, haloalkanes, alcohols, ethers, furans, pyridines, amides, esters, and sulfones. The alkanes include, but are not limited to, one or more of nonane, decane, dodecane, terpenes, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane, and cyclopentane; the aromatic hydrocarbons include, but are not limited to, one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene, propylbenzene, and 1-methylnaphthalene or indene; the haloalkanes include, but are not limited to, one or more of dichloromethane, chloroform, and carbon tetrachloride; the alcohols include, but are not limited to, one or more of methanol, ethanol, propanol, butanol, ethylene glycol, and glycerol; the ethers include, but are not limited to, ethylene glycol monomethyl ether; the furans include, but are not limited to, tetrahydrofuran; the pyridines include, but are not limited to, pyridine; the amides include, but are not limited to, N,N-dimethylformamide; and the sulfones include, but are not limited to, dimethyl sulfoxide.

[0053] In some embodiments of this application, the solvent includes one or more of toluene, chlorobenzene, chloroform, carbon tetrachloride, dimethyl sulfoxide, N,N-dimethylformamide, tetrahydrofuran, N-methylpyrrolidone, tetrahydronaphthalene, trifluorotoluene, and chloronaphthalene.

[0054] In some embodiments of this application, the composition further includes a solvent, and the concentration of the semiconductor material in the composition is 5 mg / mL to 50 mg / mL, for example, it can be 5 mg / mL, 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL or any two of the aforementioned values.

[0055] This application also provides a thin film, the material of which includes any of the compositions described above, or the thin film is prepared using any of the compositions described above, and the thin film has good surface flatness.

[0056] In some embodiments of this application, the surface roughness Ra of the thin film is 1.65 nm to 3.0 nm, for example, it can be 1.65 nm, 1.8 nm, 2.0 nm, 2.5 nm, 2.7 nm, 3.0 nm or any two of the aforementioned values.

[0057] In some embodiments of this application, the thickness of the thin film is 10nm to 100nm, for example, it can be 10nm, 30nm, 50nm, 80nm, 100nm or any two of the aforementioned values.

[0058] This application also provides a method for preparing a thin film, which can be used to prepare any of the thin films described above. The method for preparing the thin film includes the steps of: depositing a composition, drying the deposited composition to form a film, and obtaining a thin film. The composition is liquid, meaning it includes a semiconductor material, an ionic liquid material, and a solvent, all of which are described above.

[0059] Specifically, the deposition method of the composition includes, but is not limited to, one or more of the following: spin coating deposition, inkjet printing deposition, blade coating deposition, dip-coating deposition, immersion deposition, spraying deposition, roller coating deposition, casting deposition, slot coating deposition, and strip coating deposition.

[0060] The drying method of the composition includes, but is not limited to, one or more of heat treatment and vacuum drying, and the temperature of heat treatment may be, for example, 60°C to 200°C.

[0061] This application also provides an optoelectronic device, which includes, but is not limited to, light-emitting devices, photovoltaic cells, or photodetectors, such as... Figure 1 As shown, the optoelectronic device 10 includes: an anode 101 and a cathode 102 disposed opposite to each other, and a plurality of functional layers disposed between the anode 101 and the cathode 102, wherein at least one of the multiple functional layers is made of a composition as described above, and / or at least one of the multiple functional layers is made of a thin film as described above, which can improve the optoelectronic performance, device life and performance stability of the optoelectronic device 10.

[0062] In some embodiments of this application, the materials of the anode 101 and the cathode 102 are independently selected from one or more of metals, carbon materials, and second metal oxides. The metals include, but are not limited to, one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni, and Mg. The carbon materials include, but are not limited to, one or more of graphite, carbon nanotubes, graphene, and carbon fibers. The metal oxides include, but are not limited to, one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO), magnesium-doped zinc oxide (MZO), TiO2, SnO2, ZnO, and In2O3.

[0063] The anode 101 or cathode 102 can also be a composite electrode. The composite electrode has a sandwich-like structure, where the upper and lower layers are independently selected from metal oxides or metal sulfides, and the middle layer is a metal, such as one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, ZnS / Ag / ZnS, ZnS / Al / ZnS, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thickness of the middle layer does not exceed 35 nm. The thickness of the anode 101 can be, for example, 20 nm to 300 nm, and the thickness of the cathode 102 can be, for example, 20 nm to 300 nm.

[0064] In some embodiments of this application, see further reference. Figure 1 The device includes multiple functional layers, including a hole functional layer 105. The material of the hole functional layer 105 includes organic compounds, p-type compounds, or compositions as described above, and / or the hole functional layer includes a thin film as described above. This further improves the efficiency and stability of hole transport and enhances the hole injection capability of the optoelectronic device 10. The hole functional layer 105 can be a single-layer or multi-layer structure, and its thickness is, for example, 10 nm to 100 nm.

[0065] To further enhance the hole injection capability and performance stability of the hole functional layer 105, in some embodiments of this application, when the material of the hole functional layer 105 includes the composition described above and / or the hole functional layer 105 includes the thin film described above, the semiconductor material in the composition includes one or more of the organic compounds described above and the P-type compounds described above, and in the composition, the mass ratio between the semiconductor material and the ionic liquid material is 1:(0.01 to 0.05), for example, it can be 1:0.01, 1:0.02, 1:0.03, 1:0.04, 1:0.05 or any two of the aforementioned values.

[0066] In some embodiments of this application, see further reference. Figure 1 The hole functional layer 105 includes a hole injection layer 1051 and a hole transport layer 1052 stacked together. The hole injection layer 1051 is closer to the anode 101 than the hole transport layer 1052. The material of the hole injection layer 1051 includes the composition described above and / or the hole injection layer 1051 includes the thin film described above.

[0067] In some embodiments of this application, multiple functional layers include a light-emitting layer 103. For the optoelectronic device 10, which includes a hole functional layer 105, please refer to [the relevant documentation]. Figure 1 The light-emitting layer 103 is disposed between the hole functional layer 105 and the cathode. The light-emitting material of the light-emitting layer 103 includes one or more of organic light-emitting materials and light-emitting quantum dots. The thickness of the light-emitting layer 103 is, for example, 10 nm to 100 nm.

[0068] Among them, organic light-emitting materials include, but are not limited to, one or more of the following: 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridinium(III), 4,4',4”-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridinium, diaromatic anthracene derivatives, stilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid local charge transfer excited state materials, excitopolymer light-emitting materials, polyacetylene and its derivatives, poly(p-phenylene) and its derivatives, polythiophene and its derivatives, and polyfluorene and its derivatives.

[0069] The luminescent quantum dots include, but are not limited to, one or more of red, green, and blue quantum dots. Furthermore, the luminescent quantum dots include, but are not limited to, one or more of single-component quantum dots, core-shell quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots, wherein the core-shell quantum dots have one or more shells. The average particle size of the luminescent quantum dots can be, for example, 2 nm to 20 nm, with examples being 2 nm, 5 nm, 6 nm, 7 nm, 8 nm, 9 nm, 10 nm, 15 nm, 20 nm, or any value between any two of the aforementioned values.

[0070] For single-component quantum dots and core-shell quantum dots, the material of the single-component quantum dot, the material of the core of the core-shell quantum dot, or the material of the shell of the core-shell quantum dot includes, but is not limited to, at least one of group II-VI compounds, group III-V compounds, group III-VI compounds, group IV-VI compounds, or group I-III-VI compounds. Among them, the II-VI group compounds include, but are not limited to, one or more of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, and HgZnSTe. III-VI group compounds include, but are not limited to, one or more of In2S3, In2Se3, InGaS3, and InGaSe3. III-V group compounds include, but are not limited to, one or more of GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, and InAlPSb. Group IV-VI compounds include, but are not limited to, one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe, and SnPbSTe. Group I-III-VI compounds include, but are not limited to, one or more of AgInS, AgInS2, CuInS, CuInS2, AgGaS2, CuGaS2, CuGaO2, AgGaO2, AgAlO2, AgInGaS2, and CuInGaS2.

[0071] For inorganic perovskite quantum dots, the general structural formula is AMX3, where A is Cs. + M is a divalent metal cation, and M includes, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - .

[0072] For organic perovskite quantum dots, the general structural formula is CMX3, where C is a formamidinyl group and M is a divalent metal cation, including but not limited to Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe 2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - .

[0073] For organic-inorganic hybrid perovskite quantum dots, the general structural formula is BMX3, where B is selected from organic amine cations, including but not limited to CH3(CH2). n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, and M includes, but is not limited to, Pb. 2+ Sn 2+ Cu 2+ Ni 2+ Cd 2+ Cr 2+ Mn 2+ Co 2+ Fe2+ 、Ge 2+ Yb 2+ Or Eu 2+ X is a halide anion, including but not limited to Cl. - ,Br - Or I - When n=2, the inorganic metal halide octahedrons MX64- are connected by a common vertex, with the metal cation M located at the body center of the halogen octahedron and the organic amine cation B filling the gaps between the octahedrons, forming an infinitely extended three-dimensional structure. When n>2, the inorganic metal halide octahedrons MX64- connected by a common vertex extend in the two-dimensional direction to form a layered structure, with organic amine cation bilayers (protonated monoamines) or organic amine cation monolayers (protonated diamines) inserted between the layers. The organic and inorganic layers overlap to form a stable two-dimensional layered structure.

[0074] When the material of the light-emitting layer 103 includes light-emitting quantum dots, in order to improve the solution processing performance of the light-emitting quantum dots and further enhance the photoelectric performance of the optoelectronic device 10, in some embodiments of this application, ligands are also attached to the surface of the light-emitting quantum dots. The ligands can be common ligands in the art, including but not limited to C1 to C2. 30 aliphatic carboxylic acid ligands, C6-C 30 Aromatic carboxylic acid ligands, C1-C 30 Aliphatic thiol ligands, C6-C 30 Thiol aromatic ligands, C1-C 30 fatty amine ligands, C6-C 30 Aromatic amine ligands, C1-C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6-C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0075] Among them, C1~C 30 The aliphatic carboxylic acid ligands include, but are not limited to, one or more of the following: octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, teicosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid, and docosahexaenoic acid; C6~C 30 Aromatic carboxylic acid ligands include, but are not limited to, one or more of benzoic acid, biphenylic acid, and 1-naphthoic acid. (C1-C2) 30 The aliphatic thiol ligands include, but are not limited to, one or more of hexamethylenetetramine, octanethiol, nonanethiol, decanethiol, undecylthiol, dodecathiol, hexadecylthiol, and octadecylthiol, C6–C6. 30Thiol aromatic ligands include, but are not limited to, one or more of benzenethiol, triphenylmethanethiol, and p-terphenyl-4,4”-dithiol. C1~C 30 The aliphatic amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, trideamine, tetradeamine, pentadecylamine, hexadecylamine, heptadecanamine, octadecylamine, and oleylamine, C6-C6. 30 The aromatic amine ligands include, but are not limited to, one or more of aniline, indenepropylamine, 4-octylaniline, and benzidine. (C1-C2) 30 The aliphatic phosphine ligands include, but are not limited to, one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide, and tridecylphosphine oxide, C6–C6. 30 Aromatic phosphine ligands include, but are not limited to, one or more of bis(2-diphenylphosphineethyl)phenylphosphine and triphenylphosphine oxide, C6-C6. 30 The aromatic phosphate ligands include, but are not limited to, one or more of tetraethyl p-xylene diphosphate and ethyl diphenyl phosphate. Halogen ligands include, but are not limited to, -Cl, -F, -I, or -Br.

[0076] To further improve the device efficiency and brightness of the optoelectronic device 10, in some embodiments of this application, the material of the light-emitting layer 103 further includes the ionic liquid material as described above, which can improve the film quality of the light-emitting layer 103. When the material of the light-emitting layer 103 includes light-emitting quantum dots, the ionic liquid material can passivate the surface defect states and bulk defect states of the light-emitting quantum dots, effectively reduce the surface defect density of the light-emitting quantum dots, and improve the radiative recombination luminescence capability of the light-emitting quantum dots themselves, thereby improving the device efficiency of the optoelectronic device 10.

[0077] To further improve the device efficiency and performance stability of the optoelectronic device 10, in some embodiments of this application, the mass ratio between the luminescent material and the ionic liquid material is 1:(0.01 to 0.05), for example, it can be 1:0.01, 1:0.02, 1:0.03, 1:0.04, 1:0.05 or any two of the aforementioned values, to ensure that the luminescent quantum dots in the luminescent layer 103 have good radiative recombination luminescence performance, thereby improving the photoluminescence quantum yield of the luminescent layer 103.

[0078] In some embodiments of this application, multiple functional layers include an electronic functional layer 104. For the optoelectronic device 10 including a light-emitting layer 103, please refer to [the relevant documentation]. Figure 1An electronic functional layer 104 is disposed between the light-emitting layer 103 and the cathode 102. The material of the electronic functional layer 104 includes the N-type compound as described above, or the composition as described above, and / or the electronic functional layer 104 includes the thin film as described above. The electronic functional layer 104 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 104 is, for example, 10 nm to 100 nm.

[0079] When the electronic functional layer 104 is a multilayer structure, the electronic functional layer 104 includes, for example, one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 104 including an electron injection layer, an electron transport layer, and a hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 102 than the hole blocking layer. For the electronic functional layer 104 including an electron transport layer and a hole blocking layer, the electron transport layer is closer to the cathode 102 than the hole blocking layer. For the electronic functional layer 104 including an electron injection layer and an electron transport layer, the electron injection layer is closer to the cathode 102 than the electron transport layer.

[0080] In some embodiments of this application, when the material of the electronic functional layer 104 includes the composition as described above and / or the thin film as described above, the semiconductor material in the composition includes the N-type compound as described above, and the mass ratio between the semiconductor material and the ionic liquid material in the composition is 1:(0.05 to 0.1), for example, it can be 1:0.05, 1:0.06, 1:0.07, 1:0.08, 1:0.09, 1:0.1 or any two of the aforementioned values. The ionic liquid material can passivate the surface defect states and bulk defect states of the N-type compound, effectively reduce the surface defect density of the N-type compound, improve the interfacial contact between the electronic functional layer 104 and the light-emitting layer 103, effectively suppress the exciton quenching phenomenon at the interface between the light-emitting layer 103 and the electronic functional layer 104, and improve the energy level matching degree between the light-emitting layer 103 and the electronic functional layer 104, thereby improving the electron injection level of the optoelectronic device 10.

[0081] In some embodiments of this application, the material of the electronic functional layer 104 includes the ionic liquid material as described above. Along the direction from the side of the electronic functional layer 104 near the anode 101 towards the side of the electronic functional layer 104 near the cathode 102, the content of the ionic liquid material in the electronic functional layer shows an increasing trend, which can improve the corrosion phenomenon of the cathode 102, thereby further improving the performance stability of the optoelectronic device. It should be noted that "the content of the ionic liquid material in the electronic functional layer shows an increasing trend along the direction from the anode 101 towards the cathode 102" can be understood as follows: along the direction from the anode 101 towards the cathode 102, the electronic functional layer 104 is divided into several equal parts, and each part has the same thickness and mass; along the direction from the anode 101 towards the cathode 102, the mass percentage of the ionic liquid material in each part shows an increasing trend, wherein the "increasing trend" can be a gradient increasing trend or a continuous linear increasing trend.

[0082] In some embodiments of this application, multiple functional layers include a hole functional layer 105, a light-emitting layer 103, and an electronic functional layer 104 stacked sequentially. The hole functional layer 105 is made of any of the compositions described above and / or the hole functional layer 105 includes any of the thin films described above. The light-emitting layer 103 is made of light-emitting quantum dots and ionic liquid materials described above. The electronic functional layer 104 is made of any of the compositions described above and / or the electronic functional layer 104 includes any of the thin films described above. By synergistically optimizing multiple functional layers to improve the electrical balance of the optoelectronic device 10, the optoelectronic performance, device lifetime, and performance stability of the optoelectronic device 10 are further improved.

[0083] It is understood that the optoelectronic device 10 may also include a substrate, which is disposed on the side of the anode 101 away from the multiple functional layers or on the side of the cathode 102 away from the multiple functional layers. The substrate may be a rigid substrate or a flexible substrate. The material of the rigid substrate includes, but is not limited to, one or more of glass, ceramic and silicon wafer. The material of the flexible substrate includes, but is not limited to, one or more of polyimide, polycarbonate, polymethyl methacrylate, polyethylene terephthalate, polyethylene naphthalate and polyethersulfone.

[0084] This application also provides a method for fabricating an optoelectronic device, which can be used to fabricate any of the optoelectronic devices described above. The method for fabricating the optoelectronic device includes the following steps:

[0085] S1. Provide a first electrode, and form multiple functional layers on one side of the first electrode;

[0086] S2. A second electrode is formed on the side of the multiple functional layers away from the first electrode.

[0087] In this embodiment, at least one of the multiple functional layers is prepared using the composition described above.

[0088] In some embodiments of this application, multiple functional layers include a hole functional layer, which is prepared using the composition described above, wherein the semiconductor material in the composition includes one or more of the organic compounds described above and the P-type compounds described above.

[0089] The method for preparing the hole functional layer includes, for example, the steps of: depositing a third dispersion containing a semiconductor material and an ionic liquid material; drying the deposited third dispersion to obtain the hole functional layer. The selection range of the dispersion medium for the third dispersion is as described in the solvent section above; an example dispersion medium for the third dispersion is chlorobenzene. The mass ratio of the semiconductor material to the ionic liquid material in the third dispersion is 1:(0.01–0.05), and the concentration of the semiconductor material in the third dispersion is, for example, 5 mg / mL to 10 mg / mL.

[0090] In some embodiments of this application, multiple functional layers include electronic functional layers, which are prepared using compositions as described above, wherein the semiconductor material in the compositions includes N-type compounds as described above.

[0091] The method for preparing the electronic functional layer includes, for example, the steps of: depositing a fourth dispersion containing a semiconductor material and an ionic liquid material; drying the deposited fourth dispersion to obtain the electronic functional layer. The selection range of the dispersion medium for the fourth dispersion is as described in the solvent section above; an example dispersion medium for the fourth dispersion is ethanol. The mass ratio of the semiconductor material to the ionic liquid material in the fourth dispersion is 1:(0.05–0.1), and the concentration of the semiconductor material in the fourth dispersion is, for example, 10 mg / mL to 30 mg / mL.

[0092] In some embodiments of this application, multiple functional layers include a light-emitting layer. The method for forming the light-emitting layer includes the steps of: depositing a first dispersion containing a light-emitting material, and drying the deposited first dispersion into a film to obtain the light-emitting layer. The selection range of the dispersion medium and the light-emitting material for the first dispersion is as described above in the solvent description. Examples of the dispersion medium for the first dispersion are trifluorotoluene or n-octane, and the concentration of the light-emitting material in the first dispersion is, for example, 10 mg / mL to 30 mg / mL.

[0093] Furthermore, in some embodiments of this application, the first dispersion further includes the ionic liquid material as described above, wherein the mass ratio between the luminescent material and the ionic liquid material in the first dispersion is, for example, 1:(0.01 to 0.05).

[0094] In some embodiments of this application, when the first electrode is an anode and the second electrode is a cathode, the step of forming multiple functional layers includes: sequentially forming a hole functional layer, a light-emitting layer, and an electron functional layer on one side of the first electrode; and forming the second electrode on the side of the electron functional layer away from the light-emitting layer.

[0095] In some other embodiments of this application, when the first electrode is a cathode and the second electrode is an anode, the step of forming multiple functional layers includes: sequentially forming an electronic functional layer, a light-emitting layer and a hole functional layer on one side of the first electrode; and forming the second electrode on the side of the hole functional layer away from the light-emitting layer.

[0096] To further improve the performance stability of optoelectronic devices, in some embodiments of this application, when the first electrode is an anode and the second electrode is a cathode, after the step of forming multiple functional layers and before the step of forming the second electrode, the method for fabricating the optoelectronic device further includes the step of depositing a second dispersion on the side of the electronic functional layer away from the first electrode; or, when the first electrode is a cathode and the second electrode is an anode, before the step of forming multiple functional layers, the method for fabricating the optoelectronic device further includes the step of depositing a second dispersion on one side of the first electrode. The second dispersion includes the ionic liquid material described above, and the selection range of the dispersion medium in the second dispersion is referred to the solvent description above. An example of a dispersion medium for the second dispersion is glycerol, which can improve the phenomenon of cathode corrosion, thereby further improving the performance stability of the optoelectronic device.

[0097] To further improve the cathodic corrosion phenomenon, in some embodiments of this application, the deposited second dispersion is heat-treated.

[0098] It should be noted that the fabrication methods for each functional layer in the optoelectronic device 10 include, but are not limited to, chemical and / or physical methods. Chemical methods include, but are not limited to, one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodic oxidation, electrolytic deposition, and co-precipitation. Physical methods include, but are not limited to, physical deposition and solution methods. Physical deposition methods include, but are not limited to, one or more of thermal evaporation deposition, electron beam evaporation deposition, magnetron sputtering, multi-arc ion deposition, physical vapor deposition, atomic layer deposition, and pulsed laser deposition. Solution methods include, but are not limited to, one or more of spin coating, printing, inkjet printing, blade coating, dip coating, immersion coating, spray coating, roller coating, casting, slot coating, and strip coating. After fabricating each functional layer of the optoelectronic device, an encapsulation process is required. Encapsulation can be performed using common machine encapsulation or manual encapsulation. In the encapsulation environment, the oxygen and water content are both below 0.1 ppm to ensure the stability of the optoelectronic device. Specifically, the encapsulation material used to form the encapsulation layer is selected from one or more of UV adhesive, metal film and glass adhesive. For example, the encapsulation material is acrylic resin or epoxy resin.

[0099] This application also provides an electronic device, which includes any of the optoelectronic devices described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to smartphones, tablet personal computers, mobile phones, video phones, e-book readers, laptop PCs, netbook computers, workstations, servers, personal digital assistants, portable multimedia players, MP3 players, mobile medical devices, cameras, game consoles, digital cameras, car navigation systems, electronic billboards, ATMs, smart bracelets, smartwatches, virtual reality (VR) devices, or wearable devices.

[0100] The technical solutions and effects of this application will be described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of this application and are not intended to limit this application.

[0101] Material Example 1

[0102] This embodiment provides a composition, a thin film, and a method for preparing the same. The composition comprises PEDOT:PSS and 1-allyl-3-methylimidazolium dicyandiamide salt (CAS No. 917956-73-1), and the mass ratio of PEDOT:PSS to 1-allyl-3-methylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0103] The preparation method of the composition in this embodiment includes the following steps: providing a PEDOT:PSS aqueous solution, wherein the mass percentage of PEDOT:PSS is 2%; taking 1 mL of the PEDOT:PSS aqueous solution, adding 1-allyl-3-methylimidazolium dicyanamide salt to make the mass ratio between PEDOT:PSS and 1-allyl-3-methylimidazolium dicyanamide salt 1:0.03, dispersing evenly, and obtaining the composition.

[0104] In this embodiment, the thin film is made of PEDOT:PSS and 1-allyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0105] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating the prepared composition on one side of the substrate in an air environment with normal temperature and pressure, and then placing it under constant temperature heat treatment at 150°C for 30 minutes to obtain a thin film.

[0106] Material Example 2

[0107] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the mass ratio of PEDOT:PSS to 1-allyl-3-methylimidazolium dicyandiamide salt in the composition is replaced with "1:0.05".

[0108] The composition in this embodiment was prepared by referring to the preparation method of the composition in Material Example 1, except that the amount of 1-allyl-3-methylimidazolium dicyandiamide salt added was changed so that the mass ratio between PEDOT:PSS and 1-allyl-3-methylimidazolium dicyandiamide salt was 1:0.05.

[0109] In this embodiment, the thin film is made of PEDOT:PSS and 1-allyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0110] Compared to the thin film preparation method in Material Example 1, the difference in the thin film preparation method in this example is that the composition obtained in this example is used for spin coating.

[0111] Material Example 3

[0112] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the mass ratio of PEDOT:PSS to 1-allyl-3-methylimidazolium dicyandiamide salt in the composition is replaced with "1:0.01".

[0113] The composition in this embodiment was prepared by referring to the preparation method of the composition in Material Example 1, except that the amount of 1-allyl-3-methylimidazolium dicyandiamide salt added was changed so that the mass ratio between PEDOT:PSS and 1-allyl-3-methylimidazolium dicyandiamide salt was 1:0.01.

[0114] In this embodiment, the thin film is made of PEDOT:PSS and 1-allyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0115] Compared to the thin film preparation method in Material Example 1, the difference in the thin film preparation method in this example is that the composition obtained in this example is used for spin coating.

[0116] Material Example 4

[0117] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the ionic liquid material in the composition is replaced with "1-ethyl-3-methylimidazolium dicyandiamide salt (CAS No. 370865-89-7)", and the mass ratio between PEDOT:PSS and 1-ethyl-3-methylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0118] The preparation method of the composition in this embodiment includes the following steps: providing a PEDOT:PSS aqueous solution, wherein the mass percentage of PEDOT:PSS is 2%; taking 1 mL of the PEDOT:PSS aqueous solution, adding 1-ethyl-3-methylimidazolium dicyanamide salt to make the mass ratio between PEDOT:PSS and 1-ethyl-3-methylimidazolium dicyanamide salt 1:0.03, dispersing evenly, and obtaining the composition.

[0119] In this embodiment, the thin film is made of PEDOT:PSS and 1-ethyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0120] Compared to the thin film preparation method in Material Example 1, the difference in the thin film preparation method in this example is that the composition obtained in this example is used for spin coating.

[0121] Material Example 5

[0122] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the ionic liquid material in the composition is replaced with "1-(2-hydroxyethyl)-3-methylimidazolium dicyandiamide salt (CAS No. 1186103-47-8)", and the mass ratio between PEDOT:PSS and 1-(2-hydroxyethyl)-3-methylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0123] The preparation method of the composition in this embodiment includes the following steps: providing a PEDOT:PSS aqueous solution, wherein the mass percentage of PEDOT:PSS is 2%; taking 1 mL of the PEDOT:PSS aqueous solution, adding 1-(2-hydroxyethyl)-3-methylimidazolium dicyanamide salt to make the mass ratio between PEDOT:PSS and 1-(2-hydroxyethyl)-3-methylimidazolium dicyanamide salt 1:0.03, dispersing evenly, and obtaining the composition.

[0124] In this embodiment, the thin film is made of PEDOT:PSS and 1-(2-hydroxyethyl)-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0125] Compared to the thin film preparation method in Material Example 1, the difference in the thin film preparation method in this example is that the composition obtained in this example is used for spin coating.

[0126] Material Example 6

[0127] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the ionic liquid material in the composition is replaced with "1-(3-cyanopropyl)-3-methylimidazolium dicyandiamide salt (CAS No. 879866-74-7)", and the mass ratio between PEDOT:PSS and 1-(3-cyanopropyl)-3-methylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0128] The preparation method of the composition in this embodiment includes the following steps: providing a PEDOT:PSS aqueous solution, wherein the mass percentage of PEDOT:PSS is 2%; taking 1 mL of the PEDOT:PSS aqueous solution, adding 1-(3-cyanopropyl)-3-methylimidazolium dicyanamide salt to make the mass ratio between PEDOT:PSS and 1-(3-cyanopropyl)-3-methylimidazolium dicyanamide salt 1:0.03, dispersing evenly, and obtaining the composition.

[0129] In this embodiment, the thin film is made of PEDOT:PSS and 1-(3-cyanopropyl)-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0130] Compared to the thin film preparation method in Material Example 1, the difference in the thin film preparation method in this example is that the composition obtained in this example is used for spin coating.

[0131] Material Example 7

[0132] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the ionic liquid material in the composition is replaced with "1-allyl-3-vinylimidazolium dicyandiamide salt (CB411050913)", and the mass ratio between PEDOT:PSS and 1-allyl-3-vinylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0133] The preparation method of the composition in this embodiment includes the following steps: providing a PEDOT:PSS aqueous solution, wherein the mass percentage of PEDOT:PSS is 2%; taking 1 mL of the PEDOT:PSS aqueous solution, adding 1-allyl-3-vinylimidazolium dicyanamide salt to make the mass ratio between PEDOT:PSS and 1-allyl-3-vinylimidazolium dicyanamide salt 1:0.03, dispersing evenly, and obtaining the composition.

[0134] In this embodiment, the thin film is made of PEDOT:PSS and 1-allyl-3-vinylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0135] Compared to the thin film preparation method in Material Example 1, the difference in the thin film preparation method in this example is that the composition obtained in this example is used for spin coating.

[0136] Material Example 8

[0137] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the ionic liquid material in the composition is replaced with "1-benzyl-3-methylimidazolium dicyandiamide salt (CAS No. 958445-60-8)", and the mass ratio between PEDOT:PSS and 1-benzyl-3-methylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0138] The preparation method of the composition in this embodiment includes the following steps: providing a PEDOT:PSS aqueous solution, wherein the mass percentage of PEDOT:PSS is 2%; taking 1 mL of the PEDOT:PSS aqueous solution, adding 1-benzyl-3-methylimidazolium dicyandiamide salt to make the mass ratio between PEDOT:PSS and 1-benzyl-3-methylimidazolium dicyandiamide salt 1:0.03, dispersing evenly, and obtaining the composition.

[0139] In this embodiment, the thin film is made of PEDOT:PSS and 1-benzyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0140] Compared to the thin film preparation method in Material Example 1, the difference in the thin film preparation method in this example is that the composition obtained in this example is used for spin coating.

[0141] Material Example 9

[0142] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared with the composition in Material Example 1, the composition in this embodiment differs in that the ionic liquid material in the composition is replaced with "1-octyl-3-methylimidazolium dicyandiamide salt (CAS No. 905972-84-1)", and the mass ratio between PEDOT:PSS and 1-octyl-3-methylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0143] The preparation method of the composition in this embodiment includes the following steps: providing a PEDOT:PSS aqueous solution, wherein the mass percentage of PEDOT:PSS is 2%; taking 1 mL of the PEDOT:PSS aqueous solution, adding 1-octyl-3-methylimidazolium dicyanamide salt to make the mass ratio between PEDOT:PSS and 1-octyl-3-methylimidazolium dicyanamide salt 1:0.03, dispersing evenly, and obtaining the composition.

[0144] Material Example 10

[0145] This embodiment provides a composition, a thin film, and a method for preparing the same. The difference between this composition and the composition in Material Example 1 is that "PEDOT:PSS" is replaced with "TFB". The mass ratio of TFB to 1-allyl-3-methylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0146] The preparation method of the composition in this embodiment includes the following steps: providing a TFB solution with a TFB concentration of 8 mg / mL and a TFB solvent of chlorobenzene; taking 1 mL of the TFB solution and adding 1-allyl-3-methylimidazolium dicyandiamide salt to make the mass ratio between TFB and 1-allyl-3-methylimidazolium dicyandiamide salt 1:0.03, dispersing evenly to obtain the composition.

[0147] In this embodiment, the thin film is made of TFB and 1-allyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0148] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating the prepared composition on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at 150°C for 30 minutes to obtain a thin film.

[0149] Material Example 11

[0150] This embodiment provides a composition, a film, and a method for preparing the same. The composition comprises TFB and 1-ethyl-3-methylimidazolium dicyandiamide salt, and the mass ratio of TFB to 1-ethyl-3-methylimidazolium dicyandiamide salt in the composition is 1:0.03.

[0151] The preparation method of the composition in this embodiment includes the following steps: providing a TFB solution with a TFB concentration of 8 mg / mL and a TFB solvent of chlorobenzene; taking 1 mL of the TFB solution and adding 1-ethyl-3-methylimidazolium dicyandiamide salt to make the mass ratio between TFB and 1-ethyl-3-methylimidazolium dicyandiamide salt 1:0.03, dispersing evenly to obtain the composition.

[0152] In this embodiment, the thin film is made of TFB and 1-ethyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0153] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating the prepared composition on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at 150°C for 30 minutes to obtain a thin film.

[0154] Material Example 12

[0155] This embodiment provides a composition, a thin film, and a method for preparing the same. Compared to the composition in Material Example 1, the difference in this embodiment is that "PEDOT:PSS" in the composition is replaced with "nano ZnO (average particle size of 5 nm)". The mass ratio of nano ZnO to 1-allyl-3-methylimidazolium dicyandiamide salt in the composition is 1:0.08.

[0156] The preparation method of the composition in this embodiment includes the following steps: providing a nano-ZnO solution with a concentration of 30 mg / mL of nano-ZnO and ethanol as the solvent; taking 1 mL of the nano-ZnO solution and adding 1-allyl-3-methylimidazolium dicyandiamide salt to make the mass ratio between nano-ZnO and 1-allyl-3-methylimidazolium dicyandiamide salt 1:0.08, dispersing evenly to obtain the composition.

[0157] In this embodiment, the thin film is made of nano-ZnO and 1-allyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0158] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating the prepared composition on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at 100°C for 10 minutes to obtain a thin film.

[0159] Material Example 13

[0160] This embodiment provides a composition, a thin film, and a method for preparing the same. The composition comprises nano-ZnO (average particle size of 5 nm) and 1-ethyl-3-methylimidazolium dicyandiamide salt, wherein the mass ratio of nano-ZnO to 1-ethyl-3-methylimidazolium dicyandiamide salt in the composition is 1:0.08.

[0161] The preparation method of the composition in this embodiment includes the following steps: providing a nano ZnO solution with a concentration of 30 mg / mL of nano ZnO and ethanol as the solvent; taking 1 mL of the nano ZnO solution and adding 1-ethyl-3-methylimidazolium dicyandiamide salt to make the mass ratio between nano ZnO and 1-ethyl-3-methylimidazolium dicyandiamide salt 1:0.08, dispersing evenly to obtain the composition.

[0162] In this embodiment, the thin film is made of nano-ZnO and 1-ethyl-3-methylimidazolium dicyandiamide salt, and the thickness of the thin film is 30 nm.

[0163] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating the prepared composition on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at 100°C for 10 minutes to obtain a thin film.

[0164] Material Comparison Example 1

[0165] This embodiment provides a thin film, the material of which includes PEDOT:PSS, and the thickness of the thin film is 30nm.

[0166] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating a PEDOT:PSS aqueous solution onto one side of the substrate in an air environment at room temperature and pressure, and then heat-treating it at 150°C for 30 minutes to obtain a thin film.

[0167] Material Comparison Example 2

[0168] This embodiment provides a thin film, the material of which includes TFB, and the thickness of the thin film is 30 nm.

[0169] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating a TFB solution (consistent with material example 10) on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at 150°C for 30 minutes to obtain a thin film.

[0170] Material Comparison Example 3

[0171] This embodiment provides a thin film, the material of which includes nano-ZnO (average particle size of 5nm) and the thickness of the film is 30nm.

[0172] The thin film preparation method in this embodiment includes the following steps: providing a substrate, spin-coating a nano-ZnO solution (consistent with material example 12) on one side of the substrate under a nitrogen atmosphere at room temperature and pressure, and then heat-treating it at 100°C for 10 minutes to obtain a thin film.

[0173] Device Example 1

[0174] This embodiment provides an optoelectronic device and its fabrication method. The optoelectronic device is a quantum dot light-emitting diode with a positive-position structure, such as... Figure 1 As shown, the optoelectronic device 10 includes an anode 101, multiple functional layers, and a cathode 102 stacked sequentially. From bottom to top, the multiple functional layers include a hole functional layer 105, a light-emitting layer 103, and an electron functional layer 104 stacked sequentially. The hole functional layer 105 is closer to the anode 101 than the electron functional layer 104. The hole functional layer 105 consists of a hole injection layer 1051 and a hole transport layer 1052 stacked together, with the hole injection layer 1051 closer to the anode 101 than the hole transport layer 1052. The electron functional layer 104 is a single-layer structure. The light-emitting area of ​​the optoelectronic device 10 is 3.14 mm². 2 .

[0175] The materials and thicknesses of each layer in optoelectronic device 10 are as follows:

[0176] The anode 101 is made of ITO and has a thickness of 35 nm.

[0177] The cathode 102 is made of Ag and has a thickness of 40 nm.

[0178] The material of the light-emitting layer 103 includes CdZnSe / ZnS light-emitting quantum dots with a core-shell structure. The photoluminescence wavelength of the CdZnSe / ZnS light-emitting quantum dots is 540 nm, and the thickness of the light-emitting layer 103 is 40 nm.

[0179] The electronic functional layer 104 is made of nano-ZnO (with an average particle size of 5 nm) and has a thickness of 30 nm.

[0180] Hole injection layer 1051 is the thin film in material example 1;

[0181] The hole transport layer 1052 is made of TFB material and has a thickness of 30 nm.

[0182] The method for fabricating the optoelectronic device in this embodiment includes the following steps:

[0183] S1.1 Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a small amount of soapy water using a cotton swab to remove visible impurities, and then sequentially ultrasonically clean the substrate containing ITO with deionized water for 15 min, acetone for 15 min, ethanol for 15 min, and isopropanol for 15 min. After drying, perform ultraviolet-ozone surface treatment for 20 min to obtain a substrate containing an anode.

[0184] S1.2, Referring to the thin film preparation method in Material Example 1, a hole injection layer is formed on the side of the anode away from the substrate;

[0185] S1.3, Referring to the thin film preparation method in Comparative Example 2, a hole transport layer is formed on the side of the hole injection layer away from the anode;

[0186] S1.4 Under a nitrogen atmosphere at normal temperature and pressure, spin-coat a solution containing CdZnSe / ZnS luminescent quantum dots (the concentration of CdZnSe / ZnS luminescent quantum dots is 20 mg / mL, and the solvent is n-octane) on the side of the hole transport layer away from the hole injection layer, and then heat-treat at 100℃ for 5 min to obtain the luminescent layer.

[0187] S1.5, Referring to the preparation method of the thin film in Comparative Example 3, an electronic functional layer is formed on the side of the light-emitting layer away from the hole transport layer;

[0188] S1.6. Place the laminated structure that has completed step S1.5 in a vacuum with a vacuum level not exceeding 3 × 10⁻⁶. -4 In the vapor deposition chamber of Pa, Ag is thermally vaporized on the side of the electronic functional layer away from the light-emitting layer through a mask to obtain the cathode, and then encapsulated with epoxy resin to obtain the optoelectronic device.

[0189] Device Examples 2-9

[0190] The structure of the optoelectronic device in Device Example n is basically the same as that of the optoelectronic device in Device Example 1. The main difference is that the hole injection layer is different. The hole injection layer in Device Example n is the thin film prepared in Material Example n, where n is an integer from 2 to 9. For example, the hole injection layer in Device Example 2 is the thin film prepared in Material Example 2, and so on.

[0191] Compared to the fabrication method of the optoelectronic device in Device Example 1, the difference in the fabrication method of the optoelectronic device in Device Example n is that step S1.2 is replaced with "forming a hole injection layer on the side of the anode away from the substrate, referring to the thin film fabrication method in Material Example n".

[0192] Device Example 10

[0193] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the hole transport layer is the thin film in Material Embodiment 10, and the hole injection layer is the thin film in Material Comparative Example 1.

[0194] Device Example 11

[0195] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the hole transport layer is the thin film in Material Embodiment 11, and the hole injection layer is the thin film in Material Comparative Example 1.

[0196] Device Example 12

[0197] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the hole transport layer is the thin film in Material Embodiment 10.

[0198] Device Example 13

[0199] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the electronic functional layer is the thin film in Material Embodiment 12, and the hole injection layer is the thin film in Material Comparative Example 1.

[0200] Device Example 14

[0201] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the electronic functional layer is the thin film in Material Embodiment 13, and the hole injection layer is the thin film in Material Comparative Example 1.

[0202] Device Example 15

[0203] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the electronic functional layer is the thin film in Material Embodiment 12.

[0204] Device Example 16

[0205] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the electronic functional layer is the thin film in Material Embodiment 12, and the hole transport layer is the thin film in Material Embodiment 10.

[0206] Device Example 17

[0207] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the light-emitting layer includes CdZnSe / ZnS light-emitting quantum dots (consistent with Device Embodiment 1) and 1-allyl-3-methylimidazolium dicyandiamide salt, and the mass ratio between CdZnSe / ZnS light-emitting quantum dots and 1-allyl-3-methylimidazolium dicyandiamide salt is 1:0.03; the electronic functional layer is the thin film in Material Embodiment 12, and the hole transport layer is the thin film in Material Embodiment 10.

[0208] The method for preparing the luminescent layer includes the following steps: Under a nitrogen atmosphere at room temperature and pressure, a solution containing CdZnSe / ZnS luminescent quantum dots and 1-allyl-3-methylimidazolium dicyandiamide salt is spin-coated on the side of the hole transport layer away from the hole injection layer, and then heat-treated at 100℃ for 5 min to obtain the luminescent layer; In the solution, the concentration of CdZnSe / ZnS luminescent quantum dots is 20 mg / mL, the mass ratio of CdZnSe / ZnS luminescent quantum dots to 1-allyl-3-methylimidazolium dicyandiamide salt in the solution is 1:0.03, and the solvent is trifluorotoluene.

[0209] Device Example 18

[0210] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that: the material of the light-emitting layer includes CdZnSe / ZnS light-emitting quantum dots (consistent with Device Embodiment 1) and 1-ethyl-3-methylimidazolium dicyandiamide salt, and the mass ratio between CdZnSe / ZnS light-emitting quantum dots and 1-ethyl-3-methylimidazolium dicyandiamide salt is 1:0.03; the electronic functional layer is the thin film in Material Embodiment 12, and the hole transport layer is the thin film in Material Embodiment 10.

[0211] The method for preparing the luminescent layer includes the following steps: Under a nitrogen atmosphere at room temperature and pressure, a solution containing CdZnSe / ZnS luminescent quantum dots and 1-ethyl-3-methylimidazolium dicyandiamide salt is spin-coated on the side of the hole transport layer away from the hole injection layer, and then heat-treated at 100℃ for 5 min to obtain the luminescent layer; In the solution, the concentration of CdZnSe / ZnS luminescent quantum dots is 20 mg / mL, the mass ratio of CdZnSe / ZnS luminescent quantum dots to 1-ethyl-3-methylimidazolium dicyandiamide salt in the solution is 1:0.03, and the solvent is trifluorotoluene.

[0212] Device Example 19

[0213] This embodiment provides an optoelectronic device. Compared with the optoelectronic device in Device Embodiment 1, the difference in this embodiment is that: the material of the light-emitting layer includes CdZnSe / ZnS light-emitting quantum dots (consistent with Device Embodiment 1) and 1-octyl-3-methylimidazolium dicyandiamide salt, and the mass ratio between CdZnSe / ZnS light-emitting quantum dots and 1-octyl-3-methylimidazolium dicyandiamide salt is 1:0.03; the hole transport layer is the thin film in Material Embodiment 10; the electronic functional layer includes nano-ZnO and 1-decyl-3-methylimidazolium dicyandiamide salt (CAS No. 958869-93-7), and the mass ratio between nano-ZnO and 1-decyl-3-methylimidazolium dicyandiamide salt is 1:0.08.

[0214] The method for preparing the luminescent layer includes the following steps: Under a nitrogen atmosphere at room temperature and pressure, a solution containing CdZnSe / ZnS luminescent quantum dots and 1-octyl-3-methylimidazolium dicyandiamide salt is spin-coated on the side of the hole transport layer away from the hole injection layer, and then heat-treated at 100℃ for 5 min to obtain the luminescent layer; In the solution, the concentration of CdZnSe / ZnS luminescent quantum dots is 20 mg / mL, the mass ratio of CdZnSe / ZnS luminescent quantum dots to 1-octyl-3-methylimidazolium dicyandiamide salt in the solution is 1:0.03, and the solvent is trifluorotoluene.

[0215] The preparation method of the electronic functional layer includes the following steps: Under a nitrogen atmosphere at room temperature and pressure, a solution containing nano-ZnO and 1-decyl-3-methylimidazolium dicyandiamide salt is spin-coated on the side of the light-emitting layer away from the hole transport layer, and then heat-treated at 100℃ for 10 min to obtain the electronic functional layer; In the solution, the concentration of nano-ZnO is 30 mg / mL, the mass ratio between nano-ZnO and 1-decyl-3-methylimidazolium dicyandiamide salt in the solution is 1:0.08, and the solvent is ethanol.

[0216] Device Example 20

[0217] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Device Embodiment 1, the difference of the optoelectronic device in this embodiment is that the electronic functional layer is modified with 1-ethyl-3-methylimidazolium dicyandiamide salt.

[0218] Compared with the method for preparing the optoelectronic device in Device Example 1, the method for preparing the optoelectronic device in this example differs in that: a new step is added between step S1.5 and step S1.6: “In a nitrogen atmosphere at room temperature and pressure, a mixture is spin-coated on the side of the electronic functional layer away from the light-emitting layer. The mixture consists of 1-ethyl-3-methylimidazolium dicyanamide salt and ethanol (the volume ratio of 1-ethyl-3-methylimidazolium dicyanamide salt to ethanol is 1:19), and then placed at 100°C for constant temperature heat treatment for 30 min.”

[0219] Device Example 21

[0220] This embodiment provides an optoelectronic device and its fabrication method. Compared with the optoelectronic device in Device Example 1, the difference of the optoelectronic device in this embodiment is that: the electronic functional layer is modified with 1-ethyl-3-methylimidazolium dicyandiamide salt; the material of the light-emitting layer includes CdZnSe / ZnS light-emitting quantum dots (consistent with Device Example 1) and 1-octyl-3-methylimidazolium dicyandiamide salt, and the mass ratio between CdZnSe / ZnS light-emitting quantum dots and 1-octyl-3-methylimidazolium dicyandiamide salt is 1:0.03; the hole transport layer is the thin film in Material Example 10; the electronic functional layer includes nano-ZnO and 1-decyl-3-methylimidazolium dicyandiamide salt (CAS No. 958869-93-7), and the mass ratio between nano-ZnO and 1-decyl-3-methylimidazolium dicyandiamide salt is 1:0.08.

[0221] The method for preparing the light-emitting layer is the same as that for device Example 19, and the method for preparing the electronic functional layer is the same as that for device Example 19. The method for modifying the electronic functional layer with 1-ethyl-3-methylimidazolium dicyandiamide salt is the same as that for device Example 20.

[0222] Device Comparison

[0223] This comparative example provides an optoelectronic device. Compared with the optoelectronic device in Material Example 1, the difference of the optoelectronic device in this comparative example is that the hole injection layer is the thin film in Material Comparative Example 1.

[0224] Experimental Example 1

[0225] The thin films from Material Examples 1 to 9, Material Example 12, Material Example 13, Comparative Example 1, and Comparative Example 3 were subjected to performance testing. The surface roughness Ra of each thin film was measured using an atomic force microscope. The test results are shown in Table 1 below:

[0226] Table 1

[0227]

[0228] As shown in Table 1, compared to the films in Comparative Examples 1 and 3, the films in Examples 1 to 9, 12, and 13 have lower surface roughness Ra, indicating better film formation quality. For example, the Ra of the film in Example 1 is only 41% of that in Comparative Example 1, and the Ra of the film in Example 12 is only 65% ​​of that in Comparative Example 3.

[0229] This demonstrates that using a solution method to mix organic compounds and ionic liquid materials to prepare thin films can improve film quality. The reason why using a solution method to mix first metal oxides and ionic liquid materials to prepare thin films can improve film quality is that ionic liquid materials can passivate the surface defect states and bulk defect states of the first metal oxide, thereby effectively improving the problem of "agglomeration" in the solution.

[0230] Experiment Example 2

[0231] Detection devices (single-hole devices) were fabricated from the thin films of Material Example 10, Material Example 11, and Material Comparative Example 2, respectively, corresponding to the first to third detection devices. The structure of each detection device is as follows: anode (thickness of 35 nm) / hole functional layer (thickness of 30 nm) / light-emitting layer (thickness of 40 nm) / cathode (thickness of 40 nm). The anode material includes ITO, the light-emitting layer material includes CdZnSe / ZnS light-emitting quantum dots (consistent with the material of the light-emitting layer in Device Example 1), and the cathode material includes Ag. The hole functional layers in the first to third detection devices are the thin films of Material Example 10, Material Example 11, and Material Comparative Example 2, respectively.

[0232] The hole mobility of each detection device was recorded using the space charge-limited current (SCLC) method, which can be described by the Mott-Gurney equation: J = 9με0ε r V 2 / (8d 3 ), where J is the current density, μ is the hole mobility, and ε0 is the vacuum permittivity (8.85 × 10⁻⁶). -12 F / m), ε r is the dielectric constant of the material (usually approximated as 3 for organic semiconductors), V is the applied voltage, and d is the thickness of the hole functional layer (30 nm).

[0233] The hole mobility of each detection device is shown in Table 2 below:

[0234] Table 2

[0235]

[0236] As shown in Table 2, the hole mobility of the first and second detection devices is higher than that of the third detection device. For example, the hole mobility of the first detection device is 4.86 times that of the third detection device, and the hole mobility of the second detection device is 4.7 times that of the third detection device.

[0237] This demonstrates that the thin film in the embodiments of this application has good hole transport performance. Applying the thin film to optoelectronic devices can improve the hole mobility of the optoelectronic devices, thereby improving the hole injection level of the optoelectronic devices and promoting the electron-hole transport balance of the optoelectronic devices.

[0238] Experimental Example 3

[0239] The performance of the optoelectronic devices in Device Examples 1 to 21 and the comparative device were tested after 1 hour of packaging. The performance tests were conducted at a temperature of 25°C and a relative humidity of 40%.

[0240] The photoelectric performance was tested using a Fostar FPD optical characteristic measurement system (comprising a Marine Optics USB2000, a LabVIEW-controlled QE-PRO spectrometer, a Keithley 2400, a high-precision digital source meter Keithley 6485, a 50μm inner diameter optical fiber, device test probes and fixtures, various connecting cables and data cards, an efficiency test cassette, and a data acquisition system). Parameters such as the turn-on voltage, current, brightness, and emission spectrum of each photoelectric device were acquired. Then, key parameters such as external quantum efficiency and power efficiency were calculated, and the maximum brightness (L) was obtained. max, cd / m 2 ).

[0241] The method for detecting current efficiency includes the following steps: setting the luminous area to 3.14 mm². 2 The brightness values ​​of the optoelectronic device were intermittently collected within a voltage range of 0V to 8V, with a collection every 0.2V. The current efficiency of the optoelectronic device under that collection condition was obtained by dividing the brightness value collected each time by the corresponding current density. The maximum current efficiency (CE) was then obtained. max ,cd / A).

[0242] The device lifetime testing method includes the following steps: Under constant current (2mA) driving, electroluminescence lifetime analysis is performed on each optoelectronic device using lifetime testing equipment. The time (T95,h) required for each optoelectronic device to decay from its maximum brightness to 95% is recorded. Then, the device lifetime (T95@1000nit,h) at a brightness of 1000nit is obtained through the extended exponential decay brightness decay fitting formula. The specific calculation formula is as follows:

[0243]

[0244] Among them, T95 L For longer lifespan at low brightness, T95 H For the measured lifetime under high brightness, L H To accelerate the device to its maximum brightness, L LIt is 1000 nits, and A is the acceleration factor with a value of 1.7.

[0245] In addition, the optoelectronic devices that have completed the above performance tests were placed in an environment with a temperature of 25°C, protected from light, and a relative humidity of 50% for 1000 hours. Then, the maximum current efficiency (CE) of each optoelectronic device was obtained by measuring using the aforementioned method. max @1000h, cd / A). The performance test results of each optoelectronic device are shown in Table 3 below:

[0246] Table 3

[0247]

[0248] As shown in Table 3, compared with the optoelectronic devices in the device comparison examples, the optoelectronic devices in Device Examples 1 to 21 have better optoelectronic performance, device lifespan, and performance stability.

[0249] This demonstrates that using the compositions of this application to prepare the hole injection layer of an optoelectronic device can improve the film quality of the hole injection layer and improve the interfacial contact between the hole injection layer and the hole transport layer; and / or, using the compositions of this application to prepare the hole transport layer of an optoelectronic device can promote the cross-linking of organic hole transport molecules, thereby improving the hole mobility of the hole transport layer and enhancing the hole injection capability of the optoelectronic device; and / or, using the compositions of this application to prepare the electronic functional layer of an optoelectronic device, based on the ability of ionic liquid materials to passivate the surface defect states and bulk defect states of ZnO, effectively reduces the surface defect density of ZnO, improves the interfacial contact between the light-emitting layer and the electronic functional layer, effectively suppresses the exciton quenching phenomenon at the interface between the light-emitting layer and the electronic functional layer, and improves the energy level matching degree between the light-emitting layer and the electronic functional layer, thereby improving the electron injection level of the optoelectronic device, which is beneficial to improving the device efficiency, device lifetime and performance stability of the optoelectronic device.

[0250] Furthermore, the materials of the light-emitting layer include light-emitting quantum dots and ionic liquid materials. Ionic liquid materials can passivate the surface defect states and bulk defect states of light-emitting quantum dots, effectively reduce the surface defect density of light-emitting quantum dots, and improve the radiative recombination light-emitting ability of light-emitting quantum dots themselves. This can further improve the device efficiency, device lifetime, and performance stability of optoelectronic devices.

[0251] Furthermore, synergistic optimization of the hole functional layer, the light-emitting layer, and the electronic functional layer can improve the electrical balance of optoelectronic devices, suppress exciton quenching at the interface between the hole functional layer and the light-emitting layer, as well as at the interface between the electronic functional layer and the light-emitting layer, thereby further enhancing the overall performance of optoelectronic devices.

[0252] Furthermore, modifying the surface of the electronic functional layer near the cathode with ionic liquid materials can improve cathode corrosion, thereby further enhancing the performance stability of optoelectronic devices.

[0253] The foregoing has provided a detailed description of a composition, thin film, optoelectronic device, and method for preparing the optoelectronic device according to the embodiments of this application. Specific examples have been used to illustrate the principles and implementation methods of this application. The descriptions of the embodiments above are only for the purpose of helping to understand the technical solutions and core ideas of this application; those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application.

Claims

1. A composition, characterized in that, The composition comprises a semiconductor material and an ionic liquid material, wherein the semiconductor material comprises one or more of an organic compound and a first metal oxide, and the ionic liquid material comprises at least one compound with the structure shown in general formula (I) below: In general formula (I), R1 to R5 are each independently selected from - an unsubstituted or substituted C1 to C30 aliphatic chain hydrocarbon group, an unsubstituted or substituted C1 to C30 aliphatic chain hydroxyl group, an unsubstituted or substituted aliphatic cyclic hydrocarbon group having 3 to 30 ring atoms, an unsubstituted or substituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms, an unsubstituted or substituted aryl group having 6 to 30 ring atoms, an unsubstituted or substituted heteroaryl group having 5 to 30 ring atoms, or a combination of these groups; Each time R appears, it is independently selected from -D, aliphatic chain hydrocarbon groups of C1 to C20, aliphatic chain hydroxyl groups of C1 to C20, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, and *-NR. a R b Halogen groups, hydroxyl groups, carboxyl groups, nitro groups, sulfonic acid groups, aldehyde groups, Mercapto, cyano, or combinations of these groups; R a R b R c and R d Each group is independently selected from -H, -D, C1-C20 aliphatic chain hydrocarbon groups, C1-C20 aliphatic chain hydroxyl groups, aliphatic cyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, aryl groups with 6 to 20 ring atoms, heteroaryl groups with 5 to 20 ring atoms, or combinations of these groups; R e Selected from C1 to C20 aliphatic subchain hydrocarbon groups, C1 to C20 aliphatic subchain hydrocarbon oxygen groups, aliphatic subcyclic hydrocarbon groups with 3 to 20 ring atoms, aliphatic heterocyclic hydrocarbon groups with 3 to 20 ring atoms, arylene groups with 6 to 20 ring atoms, heteroarylene groups with 5 to 20 ring atoms, or combinations of these groups; * indicates a connection point.

2. The composition according to claim 1, characterized in that, In the composition, the mass ratio of the semiconductor material to the ionic liquid material is 1:(0.01 to 0.1); And / or, the first metal oxide is in the form of nanoparticles, and the average particle size of the first metal oxide is 2 nm to 100 nm; And / or, R1 to R5 are each independently selected from unsubstituted or substituted with at least one R C1 to C20 aliphatic chain hydrocarbon group, unsubstituted or substituted with at least one R C1 to C20 aliphatic chain alkyl group, unsubstituted or substituted with at least one R aryl group having 6 to 14 ring atoms, unsubstituted or substituted with at least one R heteroaryl group having 5 to 14 ring atoms, or combinations of these groups; each time R appears, it is independently selected from -D, C1 to C10 aliphatic chain hydrocarbon group, C1 to C10 aliphatic chain alkyl group, halogen group, hydroxyl group, cyano group, or combinations of these groups; And / or, the organic compounds include poly(3,4-vinyldioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4 [-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-phenyl) 4,4',4'-tris(carbazole-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N' One or more of the following: diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene; And / or, the first metal oxide is an N-type compound, said N-type compound including ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, wherein 0 < x ≤ 0.5; or, the first metal oxide is a p-type compound, the p-type compound including one or more of nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, chromium oxide, copper oxide and hafnium oxide; And / or, the ionic liquid material comprises 1-ethyl-3-methylimidazolium dicyandiamide, 1-butyl-3-methylimidazolium dicyandiamide, 1-(2-hydroxyethyl)-3-methylimidazolium dicyandiamide, 1-hydroxyethyl-2,3-dimethylimidazolium dicyandiamide, 1-hydroxyethyl-3-methylimidazolium dicyandiamide, 1-(3-cyanopropyl)-3-methylimidazolium dicyandiamide, 1-butyl-2,3-dimethylimidazolium dicyandiamide, 1-allyl-3-methylimidazolium dicyandiamide, 1-allyl-3-butylimidazolium dicyandiamide, 1-allyl-3-ethylimidazolium dicyandiamide, 1-allyl-3-vinylimidazolium dicyandiamide, 1-vinyl-3 One or more of the following: benzylimidazolium dicyandiamide salt, 1-vinyl-3-ethylimidazolium dicyandiamide salt, 1-vinyl-3-methylimidazolium dicyandiamide salt, 1-vinyl-3-butylimidazolium dicyandiamide salt, 1-benzyl-3-methylimidazolium dicyandiamide salt, 1-ethoxyethyl-3-methylimidazolium dicyandiamide salt, 1-tetradecyl-3-methylimidazolium dicyandiamide salt, 1-dodecyl-3-methylimidazolium dicyandiamide salt, 1-hexyl-3-methylimidazolium dicyandiamide salt, 1-propyl-3-methylimidazolium dicyandiamide salt, 1-hexadecyl-3-methylimidazolium dicyandiamide salt, 1-octyl-3-methylimidazolium dicyandiamide salt, and 1-decyl-3-methylimidazolium dicyandiamide salt.

3. The composition according to claim 2, characterized in that, The semiconductor material is selected from poly(3,4-vinyldioxythiophene):poly(styrene sulfonic acid) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], and the ionic liquid material is selected from one or more of 1-allyl-3-methylimidazolium dicyandiamide, 1-ethyl-3-methylimidazolium dicyandiamide, 1-(2-hydroxyethyl)-3-methylimidazolium dicyandiamide, 1-(3-cyanopropyl)-3-methylimidazolium dicyandiamide, 1-allyl-3-vinylimidazolium dicyandiamide, 1-benzyl-3-methylimidazolium dicyandiamide, and 1-octyl-3-methylimidazolium dicyandiamide; optionally, the mass ratio of the semiconductor material to the ionic liquid material in the composition is 1:(0.01-0.05). Alternatively, the semiconductor material is selected from ZnO and Zn (1-x) Mg x One or more of O, wherein the ionic liquid material is selected from one or more of 1-allyl-3-methylimidazolium dicyandiamide salt and 1-ethyl-3-methylimidazolium dicyandiamide salt; optionally, the mass ratio of the semiconductor material to the ionic liquid material in the composition is 1:(0.05-0.1).

4. The composition according to any one of claims 1 to 3, characterized in that, The composition further includes a solvent in which the semiconductor material and the ionic liquid material are dispersed; optionally, the solvent includes one or more of alkanes, aromatic hydrocarbons, halogenated hydrocarbons, alcohols, ethers, ketones, esters, furans, pyridines, amides, and sulfones.

5. A thin film, characterized in that, The material of the film includes the composition as described in any one of claims 1 to 3, and / or the film is prepared using the composition as described in claim 4.

6. The thin film according to claim 5, characterized in that, The surface roughness Ra of the thin film is 1.65 nm to 3.0 nm; And / or, the thickness of the film is 10 nm to 100 nm.

7. An optoelectronic device, characterized in that, include: The anode and cathode are positioned opposite each other; as well as Multiple functional layers are disposed between the anode and the cathode; Wherein, at least one of the plurality of functional layers is made of a composition as described in any one of claims 1 to 3, and / or at least one of the plurality of functional layers is made of a film as described in claim 5 or 6.

8. The optoelectronic device according to claim 7, characterized in that, The plurality of functional layers include a hole functional layer, the material of which includes an organic compound, a p-type compound, or a composition as described in any one of claims 1 to 3, and / or the hole functional layer includes a thin film as described in claim 5 or 6; And / or, the plurality of functional layers further include a light-emitting layer, wherein the light-emitting material of the light-emitting layer includes one or more of organic light-emitting materials and light-emitting quantum dots; And / or, the plurality of functional layers further include an electronic functional layer, the material of which includes an N-type compound or a composition as described in any one of claims 1 to 3, and / or the electronic functional layer includes a thin film as described in claim 5 or 6.

9. The optoelectronic device according to claim 8, characterized in that, The material of the light-emitting layer further includes the ionic liquid material; optionally, the mass ratio between the light-emitting material and the ionic liquid material is 1:(0.01~0.05); And / or, the organic compounds include poly(3,4-vinyldioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazabenzophenanthrene, polypyrrole, polyaniline, 3-hexyl-substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4 [-phenyl)(4-butylphenyl)amine], 4,4'-cyclohexylbis[N,N-di(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-phenyl) 4,4',4'-tris(carbazole-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N' One or more of the following: diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirodifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirodi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine], and 2,2',7,7'-tetratetra[N,N-di(4-methoxyphenyl)amino]-9,9'-spirodifluorene; And / or, the P-type compound includes one or more of the following: oxides of nickel, oxides of molybdenum, oxides of tungsten, oxides of vanadium, oxides of chromium, oxides of copper, and oxides of hafnium. And / or, the N-type compound includes ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3, ZrO2, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O, Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0 < x ≤ 0.5; And / or, when the material of the hole functional layer includes the composition and / or the hole functional layer includes the thin film as described in claim 5 or 6, the semiconductor material in the composition includes one or more of the organic compound and the p-type compound, and in the composition, the mass ratio between the semiconductor material and the ionic liquid material is 1:(0.01 to 0.05); And / or, the hole functional layer includes a stacked hole injection layer and a hole transport layer, the hole injection layer being closer to the anode than the hole transport layer, and at least the material of the hole injection layer including the composition as described in any one of claims 1 to 3 and / or at least the hole injection layer including the thin film as described in claim 5 or 6; And / or, when the material of the electronic functional layer comprises the composition and / or the electronic functional layer comprises the thin film as described in claim 5 or 6, the semiconductor material in the composition comprises the N-type compound, and in the composition, the mass ratio between the semiconductor material and the ionic liquid material is 1:(0.05 to 0.1); And / or, when the material of the electronic functional layer includes the composition described above and / or the electronic functional layer includes the thin film as described in claim 5 or 6, the content of the ionic liquid material in the electronic functional layer tends to increase along the direction from the side of the electronic functional layer near the anode to the side of the electronic functional layer near the cathode; And / or, the plurality of functional layers include the hole functional layer, the light-emitting layer and the electronic functional layer stacked sequentially, wherein the hole functional layer is closer to the anode than the electronic functional layer, the material of the light-emitting layer includes the light-emitting material and the ionic liquid material, the material of the hole functional layer includes the composition as described in any one of claims 1 to 3 and / or the hole functional layer includes the thin film as described in claim 5 or 6, and the material of the electronic functional layer includes the composition as described in any one of claims 1 to 3 and / or the electronic functional layer includes the thin film as described in claim 5 or 6.

10. A method for fabricating an optoelectronic device, characterized in that, Includes the following steps: A first electrode is provided, and a plurality of functional layers are formed on one side of the first electrode; and A second electrode is formed on the side of the plurality of functional layers away from the first electrode; Wherein, at least one of the plurality of functional layers is prepared using the composition as described in claim 4.

11. The method for fabricating the optoelectronic device according to claim 10, characterized in that, The plurality of functional layers include a hole functional layer, the hole functional layer being prepared using the composition as described in claim 4, wherein the semiconductor material in the composition includes one or more of the organic compound and the p-type compound, and wherein the mass ratio between the semiconductor material and the ionic liquid material in the composition is 1:(0.01 to 0.05). And / or, the plurality of functional layers include an electronic functional layer, the electronic functional layer being prepared using the composition as described in claim 4, wherein the semiconductor material in the composition includes the N-type compound, and wherein the mass ratio between the semiconductor material and the ionic liquid material in the composition is 1:(0.05 to 0.1); And / or, the plurality of functional layers include a light-emitting layer, and the method for forming the light-emitting layer includes the steps of: depositing a first dispersion comprising a light-emitting material, drying the deposited first dispersion into a film, and obtaining the light-emitting layer, wherein the light-emitting material includes one or more of an organic light-emitting material and a light-emitting quantum dot.

12. The method for fabricating the optoelectronic device according to claim 11, characterized in that, The first dispersion further includes the ionic liquid material; optionally, in the first dispersion, the mass ratio between the luminescent material and the ionic liquid material is 1:(0.01~0.05); And / or, when the first electrode is an anode and the second electrode is a cathode, after the step of forming the plurality of functional layers and before the step of forming the second electrode, the method for fabricating the optoelectronic device further includes the step of depositing a second dispersion on the side of the electronic functional layer away from the first electrode; or, when the first electrode is a cathode and the second electrode is an anode, before the step of forming the plurality of functional layers, the method for fabricating the optoelectronic device further includes the step of depositing a second dispersion on one side of the first electrode; wherein the second dispersion comprises the ionic liquid material.

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