Method for manufacturing a composite metal film

Abstract

The manufacturing method of the composite metal film comprises the following steps: cleaning a metal substrate; plating a nickel film on the surface of the metal substrate; performing ion etching on the nickel film to form a honeycomb surface; plating a tin film on the nickel film; and performing ion etching on the tin film to form a honeycomb surface. The method is simple in process and low in cost, and can form a film body on the metal substrate, which is stable in combination and performance, resistant to corrosion and low in stress, thereby prolonging the service life.

Description

Technical Field

[0001] This invention relates to the field of metal substrate processing, and more particularly to a method for manufacturing a composite metal film. Background Technology

[0002] With the development of technology, metal coatings are widely used. Commonly, metal films are deposited on metal substrates to protect the substrate itself. However, metal films often have the following problems: for example, they are susceptible to corrosion from air, water, or chemicals, affecting their performance and lifespan; under long-term stress, they may develop fatigue cracks or fatigue failure, reducing their service life; and the high stress levels of metal films make them prone to deformation, affecting their stability and durability.

[0003] Therefore, there is an urgent need to provide an improved method for manufacturing composite metal films to overcome the above-mentioned defects. Summary of the Invention

[0004] The purpose of this invention is to provide a method for manufacturing a composite metal film. This method is simple and low-cost, and can form a film with stable bonding, stable performance, corrosion resistance, and low stress on a metal substrate, thereby extending its service life.

[0005] To achieve the above objectives, the method for manufacturing the composite metal film of the present invention includes the following steps:

[0006] Clean the metal substrate;

[0007] A nickel film is plated on the surface of the metal substrate;

[0008] Ion etching is performed on the nickel film to form a honeycomb-like surface.

[0009] Tin film is deposited on the nickel film; and

[0010] Ion etching is performed on the tin film to form a honeycomb-like surface.

[0011] Compared with the prior art, the present invention forms a nickel film on a metal substrate through two coating processes, and forms a honeycomb structure on the surface of the nickel film to reduce the surface stress of the nickel film. Then, a tin film is formed on the nickel film, and a honeycomb structure is formed on the surface of the tin film to further reduce the surface stress of the tin film. At the same time, the nickel film and the tin film form a good adhesion, forming a composite film with stable performance, which has the advantages of corrosion resistance, low stress and strong adhesion.

[0012] As one embodiment, cleaning the metal substrate includes: rinsing with deionized water and bombarding the surface of the metal substrate with ions.

[0013] As one embodiment, the ion bombardment includes: introducing argon gas into the chamber to make the vacuum degree of the chamber 3-6 Pa, controlling the voltage to 2.0-3.0 KV, the current to 2.2-2.5 A, and the ion bombardment time to 400-500 s.

[0014] As an example, the nickel film coating step includes: controlling the vacuum degree of the chamber to be 2×10-2-2.5×10-2 Pa, introducing argon gas, controlling the coating power to be 9-10 kW, and the ion bombardment current to be 20-25 A.

[0015] As an example, the ion etching step of the nickel film includes: introducing SF6 and C4F8 into the chamber, controlling the pressure of the chamber to be 50-70 mtorr, the source power to be 1200-1250 W, and the bias power to be 100-200 W.

[0016] As an example, the ion etching step of the nickel film further includes: controlling the temperature of the chamber to 20-25°C and controlling the nickel target sputtering time to 120-150 minutes.

[0017] As an example, the gas flow rate of SF6 is controlled at 1200-1300 sccm, and the gas flow rate of C4F8 is controlled at 600-650 sccm.

[0018] As an example, the tin film coating process includes: controlling the coating power to be 5-5.5kW, the ion bombardment current to be 12-15A, and controlling the tin target sputtering time to be 50-60 minutes.

[0019] As an example, the ion etching step of the tin film includes: introducing SF6 and C4F8 into the chamber, controlling the pressure of the chamber to be 30-50 mtorr, the source power to be 600-1000 W, and the bias power to be 80-100 W.

[0020] As an example, the gas flow rate of SF6 is controlled at 800-1000 sccm, and the gas flow rate of C4F8 is controlled at 400-500 sccm. Detailed Implementation

[0021] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific implementation methods of this application are described in detail below with reference to some embodiments. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0022] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0023] In this application, unless otherwise expressly specified and limited, "above" or "below" the second feature can mean that the first feature is in direct contact with the second feature, or that the first feature is in indirect contact with the second feature through an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0024] It should be noted that when an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. When an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used herein are for illustrative purposes only and do not represent the only possible implementation.

[0025] The method for manufacturing the composite metal film of the present invention will be further described below with reference to embodiments, but this does not limit the present invention. The method of the present invention aims to provide a method for manufacturing a composite metal film that is simple in process and low in cost, and can form a film with stable bonding, stable performance, corrosion resistance, and low stress on a metal substrate, thereby extending its service life.

[0026] An embodiment of the method for manufacturing the composite metal film of the present invention includes the following steps:

[0027] Clean the metal substrate;

[0028] A nickel film is plated on the surface of the metal substrate;

[0029] Ion etching is performed on the nickel film to form a honeycomb-like surface.

[0030] Tin film is deposited on the nickel film; and

[0031] Ion etching is performed on the tin film to form a honeycomb-like surface.

[0032] This invention forms a nickel film on a metal substrate through two coating processes, and then forms a honeycomb structure on the surface of the nickel film to reduce the surface stress of the nickel film. Subsequently, a tin film is formed on the nickel film, and a honeycomb structure is formed on the surface of the tin film to further reduce the surface stress of the tin film. At the same time, the nickel film and the tin film form a good adhesion, forming a stable composite film with the advantages of corrosion resistance, low stress, and strong adhesion.

[0033] In one specific embodiment, the surface of the metal substrate is first cleaned with deionized water, followed by ion bombardment to further remove surface contaminants and organic matter. Specifically, the cleaned metal substrate is placed in a vacuum evaporation coating chamber, and the ion bombardment process conditions are controlled as follows:

[0034] Using a high-power medium-frequency pulse or a high-power DC power supply, the vacuum level in the vacuum evaporation coating chamber is first evacuated to 3×10⁻⁶. -2 Argon gas is introduced into the vacuum evaporation coating chamber at a flow rate of 800-900 sccm to achieve a vacuum level of 3-6 Pa. Under conditions of 2.0-3.0 kV voltage and 2.2-2.5 A current, the argon gas is ionized, thereby bombarding the surface of the metal substrate. Preferably, the bombardment time is 400-500 s.

[0035] Next, the nickel film coating step is performed. Specifically, the vacuum level of the chamber is controlled to be 2 × 10⁻⁶. -2 -2.5×10 -2 Under these conditions, argon gas is introduced, and the coating power is controlled at 9-10 kW, with an ion bombardment current of 20-25 A. Nickel target sputtering is then initiated for 120-150 minutes to complete the nickel plating. Preferably, the nickel film thickness is 20-30 micrometers.

[0036] Next, an ion etching step is performed on the nickel film. Specifically, SF6 and C4F8 are used as reactant gases introduced into the chamber. Specifically, the SF6 gas flow rate is controlled at 1200-1300 sccm, and the C4F8 gas flow rate is controlled at 600-650 sccm. The chamber pressure is controlled at 50-70 mtorr, the source power at 1200-1250 W, and the bias power at 100-200 W. To achieve optimal etching results, the chamber temperature is controlled at 20-25°C, and the nickel film thickness is controlled at 8-10 micrometers. Through this ion etching step, a honeycomb structure is formed on the nickel surface, releasing stress, and simultaneously, good adhesion is formed between the nickel film and the metal substrate surface.

[0037] Next, the tin film deposition step is carried out. Specifically, the deposition power is controlled at 5-5.5kW, the ion bombardment current is 12-15A, and the tin target sputtering time is controlled at 50-60 minutes, thereby forming a tin film with a thickness of 8-12 micrometers.

[0038] Next, the tin film undergoes ion etching. Specifically, SF6 and C4F8 are used as reactant gases introduced into the chamber. Specifically, the SF6 gas flow rate is controlled at 800-1000 sccm, and the C4F8 gas flow rate is controlled at 400-500 sccm. The chamber pressure is controlled at 30-50 mtorr, the source power at 600-1000 W, and the bias power at 80-100 W. Under these conditions, etching is performed to a depth of 5-10 micrometers. This ion etching step allows a honeycomb structure to form on the tin surface, releasing stress, and simultaneously promoting good adhesion between the tin and nickel films.

[0039] Therefore, the two coating processes described above can form a good metal transition layer on the metal substrate, namely a nickel film and a tin film. Moreover, the two ion etching processes can make the surface of the nickel film and the tin film form a honeycomb structure, which not only enhances the adhesion but also reduces stress.

[0040] In summary, this invention forms a nickel film on a metal substrate through two coating processes, creating a honeycomb structure on the nickel film surface to reduce surface stress. Subsequently, a tin film is formed on the nickel film, with a honeycomb structure on its surface, further reducing surface stress. Simultaneously, the nickel and tin films adhere well, forming a stable composite film with advantages such as corrosion resistance, low stress, and strong adhesion, thus extending service life. This method is simple, low-cost, and suitable for widespread industrial application.

[0041] The above-disclosed embodiments are merely preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. Therefore, any equivalent variations made in accordance with the claims of the present invention are still within the scope of the present invention.

Claims

1. A method for manufacturing a composite metal film, wherein the method comprises the following steps: Clean the metal substrate; A nickel film is plated on the surface of the metal substrate; Ion etching is performed on the nickel film to form a honeycomb-like surface. A tin film is plated onto the nickel film; as well as Ion etching is performed on the tin film to form a honeycomb surface.

2. The method for manufacturing the composite metal film as described in claim 1, characterized in that, The cleaning of the metal substrate includes: washing with deionized water and bombarding the surface of the metal substrate with ions.

3. The method for manufacturing the composite metal film as described in claim 2, characterized in that, The ion bombardment includes: introducing argon gas into the chamber to make the vacuum degree of the chamber 3-6 Pa, controlling the voltage to 2.0-3.0 KV, the current to 2.2-2.5 A, and the ion bombardment time to 400-500 s.

4. The method for manufacturing the composite metal film as described in claim 1, characterized in that, The nickel film coating step includes: controlling the vacuum level of the chamber to be 2×10⁻⁶. -2 -2.5×10 -2 Pa, argon gas is introduced, and the coating power is controlled at 9-10kW, and the ion bombardment current is 20-25A.

5. The method for manufacturing the composite metal film as described in claim 1, characterized in that, The ion etching step of the nickel film includes: introducing SF6 and C4F8 into the chamber, controlling the pressure of the chamber to be 50-70 mtorr, the source power to be 1200-1250 W, and the bias power to be 100-200 W.

6. The method for manufacturing the composite metal film as described in claim 5, characterized in that, The ion etching step of the nickel film further includes: controlling the temperature of the chamber to be 20-25°C, and the thickness of the nickel film to be 8-10 micrometers.

7. The method for manufacturing the composite metal film as described in claim 5, characterized in that, The gas flow rate of SF6 is controlled at 1200-1300 sccm, and the gas flow rate of C4F8 is controlled at 600-650 sccm.

8. The method for manufacturing the composite metal film as described in claim 1, characterized in that, The tin film coating process includes: controlling the coating power to be 5-5.5kW, the ion bombardment current to be 12-15A, and controlling the tin target sputtering time to be 50-60 minutes.

9. The method for manufacturing the composite metal film as described in claim 1, characterized in that, The ion etching step of the tin film includes: introducing SF6 and C4F8 into the chamber, controlling the pressure of the chamber to be 30-50 mtorr, the source power to be 600-1000W, and the bias power to be 80-100W.

10. The method for manufacturing the composite metal film as described in claim 1, characterized in that, The gas flow rate of SF6 is controlled at 800-1000 sccm, and the gas flow rate of C4F8 is controlled at 400-500 sccm.