A method for dynamically monitoring the thickness of an ITO coating

CN122105348AActive Publication Date: 2026-05-29XIAMEN YINKE QIRUI SEMICON TECH CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
XIAMEN YINKE QIRUI SEMICON TECH CO LTD
Filing Date
2026-04-29
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

In the existing DC magnetron sputtering process for indium tin oxide, film thickness control relies on preset deposition time and offline sampling, making it difficult to achieve in-situ, continuous, and low-disturbance monitoring of the coating process. In particular, it is difficult to reflect changes in film thickness and electrical properties in real time during target oxidation poisoning or thin film growth stages.

Method used

By using the substrate tray in the vacuum coating system as a radio frequency antenna, a radio frequency sweep perturbation signal is injected. By acquiring the phase difference between radio frequency voltage and current, the time series and drift slope of the resonant peak frequency are extracted. Combined with the impedance film thickness dynamic equation, the geometric thickness of the thin film and the state of the target material are calculated. The oxygen flow rate and sputtering power are dynamically adjusted to achieve high-precision control of the coating process.

Benefits of technology

It achieves high-precision, in-situ continuous monitoring of film thickness, avoids target poisoning, ensures the stability and batch consistency of coating endpoints, and improves the yield rate of the production line and the consistency of film preparation.

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Abstract

The present application relates to the technical field of thin film deposition and vacuum coating monitoring control, in particular to a kind of ITO coating thickness dynamic monitoring method;Including: obtaining target material quality parameter, process gas parameter and substrate material quality parameter;Initial sheath equivalent circuit topology model containing impedance film thickness kinetics equation is constructed;RF sweep perturbation signal is injected to the substrate tray multiplexed as RF antenna;The phase difference of the RF voltage and current of the reflection signal is continuously collected, and the resonance peak frequency time sequence and its drift slope corresponding to the phase difference of zero are extracted;Substitute impedance film thickness kinetics equation to solve thin film geometric thickness and target material poisoning index;When thin film geometric thickness is less than target thickness, adjust oxygen flow, when greater than or equal to target thickness, fine-tune sputtering target power and oxygen flow, to complete coating control;Realize the synchronous perception of film thickness and target surface state, improve the thickness control precision and process endpoint consistency.
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