Evanescent isotopic battery based on composite energy transfer layer and method of making the same
By introducing a graphene quantum dot composite energy transport layer into a radiation isotope battery, the problem of low energy utilization efficiency was solved, multi-path conversion of radiant energy was realized, and energy conversion efficiency and stability were improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- HUBEI UNIV OF SCI & TECH
- Filing Date
- 2026-03-11
- Publication Date
- 2026-05-29
AI Technical Summary
The energy utilization efficiency of existing radiation isotope batteries is limited, especially the limited range of low-energy beta or alpha rays. The location of radiation energy deposition is difficult to match with the effective absorption area of semiconductor materials, which limits the improvement of energy conversion efficiency.
A graphene quantum dot composite energy transport layer is introduced between the radiation source layer and the semiconductor material layer. The graphene quantum dots provide a tunable energy level structure, generate fluorescent radiation, and are absorbed by the semiconductor material, forming a composite energy utilization path that directly converts radiation energy and combines light energy with electrical energy.
It improves the energy conversion efficiency of radiation isotope batteries, reduces carrier recombination losses, realizes multi-path energy utilization, and enhances overall performance and stability.
Smart Images
Figure CN122117512A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of isotope battery technology, and in particular to a radiation-voltaic isotope battery based on a composite energy transport layer and its preparation method. Background Technology
[0002] A radiation-volt-isotope (PVIS) battery is an energy conversion device that converts the radiation energy released during the decay of radioactive isotopes into electrical energy. It features long lifespan, strong environmental adaptability, and requires no external power supply, making it a promising candidate for applications in deep space exploration, extreme environment sensors, and micro-energy systems. Existing PVIS batteries typically employ a structure where the radioactive source layer is directly coupled to a semiconductor material layer. They rely primarily on the direct interaction of beta or alpha rays emitted by the radioactive source with the semiconductor material, generating electron-hole pairs. A built-in electric field then separates the charge carriers, resulting in the output of electrical energy. However, this energy utilization method is relatively limited. Only a portion of the radiation energy released by the radioactive source is effectively converted into electrical energy by the semiconductor material; the remaining energy is often consumed through scattering or non-radiative transitions, thus limiting the overall energy utilization efficiency of the PVIS battery. Especially for low-energy beta or alpha rays, their limited range makes it difficult to achieve an optimal match between the deposition location of the radiation energy and the effective absorption region of the semiconductor material, further restricting the improvement of energy conversion efficiency.
[0003] To improve the performance of radiation-voltage isotope solar cells, some existing technologies attempt to introduce functional layers (such as quantum dot layers, scintillator layers, or fluorescent layers) between the radiation source layer and the semiconductor material layer to modulate or convert the radiation energy from the source. However, in existing schemes, these functional layers typically only serve as intermediaries in converting radiation energy into light energy, which is then converted again by the semiconductor material through the photoelectric effect. This multi-stage energy conversion path inevitably introduces additional losses, and the introduced functional layers often do not directly participate in the energy conversion process at the electrical level. They may even increase interface recombination losses due to insufficient carrier transport capacity, thus limiting the improvement of overall performance.
[0004] Therefore, it is necessary to provide a composite energy transfer structure that can effectively modulate the radiation energy of a radioactive source and enable the intermediate functional structure to directly participate in the energy conversion process, thereby constructing a multi-path collaborative energy utilization mechanism to improve the energy utilization efficiency of radiation-volt isotope batteries. This has become a technical problem that urgently needs to be solved in this field. Summary of the Invention
[0005] To address the shortcomings of existing technologies, this invention proposes a high-efficiency radiation-voltaic isotope battery based on a graphene quantum dot composite energy transport layer. By introducing a composite layer with energy modulation and carrier transport functions between the radiation source layer and the semiconductor material layer, a composite energy utilization path from radiation energy + light energy to electrical energy is constructed, thereby improving the energy conversion efficiency and operational stability of the radiation-voltaic isotope battery.
[0006] To achieve the above objectives, the present invention adopts the following technical solution: a radiation isotope battery based on a graphene quantum dot composite energy transmission layer, comprising a radiation source layer, a semiconductor material layer, and a graphene quantum dot composite energy transmission layer disposed between the radiation source layer and the semiconductor material layer; wherein, the graphene quantum dots are composited with graphene-like materials to form the graphene quantum dot composite energy transmission layer. The graphene quantum dots provide a tunable energy level structure and generate fluorescence under radiation excitation from a radioactive source. At least part of the fluorescence is absorbed by the semiconductor energy conversion unit and generates electron-hole pairs to achieve electrical energy output. The semiconductor energy conversion unit can also directly receive radiation excitation from the radioactive source to generate electron-hole pairs and achieve electrical energy output. The graphene quantum dot composite energy transport layer, which forms a heterogeneous interface, and the semiconductor material layer constitute a semiconductor energy conversion unit. Graphene-like materials construct continuous conductive channels to promote interfacial charge transfer between the graphene quantum dot composite energy transport layer and the semiconductor material layer, and reduce carrier recombination loss.
[0007] The fluorescence emission wavelength can be adjusted by controlling the particle size and surface functional groups of the graphene quantum dots to match the absorption range of different semiconductor materials.
[0008] The emission wavelength of the fluorescence radiation generated by the graphene quantum dots is within the absorption band of the semiconductor energy conversion unit.
[0009] The graphene quantum dots are attached to or dispersed on the surface of the graphene-like material through non-covalent interactions.
[0010] The graphene-like material is reduced graphene oxide, graphene grown by chemical vapor deposition, or a combination thereof.
[0011] The semiconductor material layer is silicon, gallium arsenide, cadmium telluride, indium phosphide, gallium nitride, silicon carbide, or an epitaxial intrinsic layer structure thereof.
[0012] The thickness of the graphene quantum dot composite energy transmission layer is 50 nm–1 μm, preferably 100 nm–500 nm.
[0013] The radioactive source layer is a β radioactive source or an α radioactive source.
[0014] A method for preparing the radiation isotope battery includes the following steps: S1, preparing a radiation source layer; S2, combining graphene quantum dots with graphene-like materials to form a graphene quantum dot composite energy transmission layer, and then transferring or coating it onto the surface of a semiconductor material layer to form a semiconductor energy conversion unit; S3, covering the surface of the prepared semiconductor energy conversion unit with the radiation source layer, and simultaneously leading out electrodes and encapsulating them.
[0015] Compared with the prior art, the present invention has the following advantages and beneficial effects: This invention establishes a graphene quantum dot composite energy transmission layer between the radiation source layer and the semiconductor material layer. This allows the radiation energy from the radiation source to not only directly act on the semiconductor material layer to generate electron-hole pairs, but also to excite the graphene quantum dots to generate fluorescence radiation, which is absorbed by the semiconductor energy conversion unit and participates in the output of electrical energy. This forms a composite energy utilization mechanism that combines a direct radiation energy conversion path with an indirect radiation energy + light energy - electrical energy conversion path, overcoming the problem of the single energy utilization path in existing radiation isotope batteries.
[0016] Unlike existing technologies where the functional layer serves only as an energy intermediary or conversion layer, the graphene quantum dot composite energy transport layer in this invention forms a semiconductor energy conversion unit by contacting the semiconductor material layer. This allows the semiconductor energy conversion unit to directly participate in energy conversion during optical excitation and interface charge transfer, thereby effectively utilizing some of the radiant energy that might otherwise be lost in the form of scattering or non-radiation, thus improving the overall energy conversion efficiency.
[0017] 3. The graphene quantum dot composite energy transfer layer used in this invention can be prepared by solution method or coating method. The process is simple, easy to be compatible with existing radiation isotope battery manufacturing process, and applicable to a variety of semiconductor material systems and different types of radiation sources. It has good versatility and engineering application prospects. Attached Figure Description
[0018] Figure 1 This is a schematic diagram of a high-efficiency radiation isotope battery based on a graphene quantum dot composite energy transfer layer.
[0019] Legend: 1 is the radiation source layer, 2 is the semiconductor material layer, 3 is the graphene quantum dot composite energy transmission layer, 4 is the graphene quantum dot, 5 is the graphene-like material, and 6 is the semiconductor energy conversion unit. Detailed Implementation
[0020] The following are specific embodiments of the present invention, which are described in conjunction with the accompanying drawings. However, the present invention is not limited to these embodiments.
[0021] like Figure 1As shown, the radiation isotope battery based on the graphene quantum dot composite energy transfer layer includes a radiation source layer 1, a semiconductor material layer 2, and a graphene quantum dot composite energy transfer layer 3 disposed between the radiation source layer 1 and the semiconductor material layer 2; wherein, graphene quantum dots 4 and graphene-like materials 5 are combined to form the graphene quantum dot composite energy transfer layer 3. The graphene quantum dot 4 provides a tunable energy level structure and generates fluorescence under the excitation of a radiation source. The fluorescence is at least partially absorbed by the semiconductor energy conversion unit 6 and generates electron-hole pairs to achieve electrical energy output. The semiconductor energy conversion unit 6 can also directly receive radiation excitation from the radiation source to generate electron-hole pairs and achieve electrical energy output. The graphene quantum dot composite energy transport layer 3, which forms a heterogeneous interface, and the semiconductor material layer 2 constitute a semiconductor energy conversion unit 6. The graphene material 5 constructs a continuous conductive channel to promote the interfacial charge transfer between the graphene quantum dot composite energy transport layer 3 and the semiconductor material layer 2, and to reduce carrier recombination loss.
[0022] The fluorescence emission wavelength is tuned by controlling the particle size and surface functional groups of graphene quantum dots 4 to match the absorption range of different semiconductor materials. The emission wavelength of the fluorescence radiation generated by graphene quantum dots 4 is located within the absorption band of the semiconductor energy conversion unit. Graphene quantum dots 4 are attached or dispersed on the surface of graphene-like materials 5 through non-covalent interactions. Example
[0023] This embodiment provides a radiation-voltage isotope battery, including an independently disposed radiation source layer 1, a graphene quantum dot composite energy transfer layer 3, and a semiconductor material layer 2, wherein the radiation source layer 1 is a 1 μm layer deposited on nickel metal. 63 Ni β radiation source; the semiconductor material layer 2 is a homoepitaxial Si structure, wherein the thickness of the epitaxial layer I is 10 μm and the doping concentration is 10. 14 ~10 15 cm -3 The N-type doping concentration is 10. 18 ~10 19 cm -3 The graphene quantum dot composite energy transmission layer 3 is composed of graphene quantum dots 4 and reduced graphene oxide. The graphene quantum dots 4 are prepared by a hydrothermal method, with a particle size of 3–10 nm. The reduced graphene oxide is prepared by a chemical reduction method. After mixing, the two are deposited on the surface of a Si semiconductor material by spin coating to form a 200 nm thick graphene quantum dot composite energy transmission layer 3. After low-temperature annealing at 150 °C, it forms a high-performance semiconductor energy conversion unit 6 with the Si semiconductor material layer 2. Finally, the prepared 1 μm... 63A Ni β radiation source covers the surface of the aforementioned semiconductor energy conversion unit 6, and electrodes are led out and encapsulated. During operation, this battery... 63 The β particles released by the Niβ radioactive source directly act on the semiconductor energy conversion unit 6 to generate electron-hole pairs, while the other part excites the graphene quantum dots 4 to generate fluorescence radiation. The fluorescence is absorbed by the semiconductor energy conversion unit 6 and participates in the output of electrical energy, thus forming a dual-path energy conversion mechanism. Example
[0024] This embodiment provides a radiation-voltage isotope battery, including an independently disposed radiation source layer 1, a graphene quantum dot composite energy transport layer 3, and a semiconductor material layer 2, wherein the radiation source layer 1 is a 2 μm graphene quantum dot composite energy transport layer 3 prepared by electroplating. 63 Ni β self-supporting thin-film radiation source; the semiconductor material layer 2 is a homogeneous epitaxial Si structure, wherein the thickness of epitaxial layer I is 10 μm and the doping concentration is 10. 14 ~10 15 cm -3 The N-type doping concentration is 10. 18 ~10 19 cm -3 The graphene quantum dot composite energy transmission layer 3 is composed of graphene quantum dots 4 and reduced graphene oxide. The graphene quantum dots 4 are prepared by a hydrothermal method, with a particle size of 3–10 nm. The reduced graphene oxide is prepared by a chemical reduction method. After mixing, the two are deposited on the surface of a Si semiconductor material by spin coating to form a 200 nm thick graphene quantum dot composite energy transmission layer 3. After low-temperature annealing at 150°C, it forms a high-performance semiconductor energy conversion unit 6 with the Si semiconductor material layer 2. Finally, the prepared 2 μm... 63 A Niβ self-supporting thin-film radiation source is placed between the two semiconductor energy conversion units 6 to form a sandwich structure, while electrodes are led out and the whole is encapsulated. Example
[0025] This embodiment provides a radiation-voltage isotope battery, including an independently disposed radiation source layer 1, a graphene quantum dot composite energy transport layer 3, and a semiconductor material layer 2, wherein the radiation source layer 1 is prepared using powder metallurgy technology with a 1 μm thickness. 241 Am α radiation source; the semiconductor material layer 2 is a homoepitaxial SiC structure, wherein the thickness of the epitaxial layer I is 10 μm and the doping concentration is 10. 15 ~10 16 cm -3 The N-type doping concentration is 10. 18 ~10 19 cm -3The graphene quantum dot composite energy transmission layer 3 is composed of graphene quantum dots 4 with a particle size of 3–10 nm and monolayer graphene prepared by chemical vapor deposition. The monolayer graphene is first transferred to the surface of a SiC semiconductor material, then a solution of graphene quantum dots 4 is deposited by spin coating and subjected to low-temperature heat treatment, forming a high-performance semiconductor energy conversion unit 6 with the SiC semiconductor material layer 2. Finally, the prepared 1 μm... 241 An Amα radiation source is applied to the surface of the aforementioned semiconductor energy conversion unit 6, with electrodes extracted and encapsulated. During operation, this battery... 241 The alpha particles released by the Am alpha radiation source directly act on the semiconductor energy conversion unit 6 to generate electron-hole pairs, while the other part excites the graphene quantum dots 4 to generate fluorescence radiation. The fluorescence is absorbed by the semiconductor energy conversion unit 6 and participates in the output of electrical energy, thus forming a dual-path energy conversion mechanism. Example
[0026] This embodiment provides a radiation-voltage isotope battery, including an independently disposed radiation source layer 1, a graphene quantum dot composite energy transfer layer 3, and a semiconductor material layer 2, wherein the radiation source layer 1 is a 1 μm layer deposited on nickel metal. 63 The Ni β radiation source, wherein the semiconductor material layer 2 is a homoepitaxial Si structure, wherein the epitaxial layer I has a thickness of 10 μm and a doping concentration of 10. 14 ~10 15 cm -3 The N-type doping concentration is 10. 18 ~10 19 cm -3 The graphene quantum dot composite energy transmission layer 3 is composed of nitrogen-doped graphene quantum dots 4 with a particle size of 3–8 nm and multilayer graphene prepared by chemical vapor deposition. The multilayer graphene is first transferred to the surface of a Si semiconductor material, then a solution of nitrogen-doped graphene quantum dots 4 is deposited by spin coating and subjected to low-temperature heat treatment to form a high-performance semiconductor energy conversion unit 6 with the Si semiconductor material layer 2. Finally, the prepared 1 μm... 63 A Ni β radiation source is applied to the surface of the aforementioned semiconductor energy conversion unit 6, and electrodes are drawn out and encapsulated.
[0027] The specific embodiments described herein are merely illustrative of the spirit of the invention. Those skilled in the art to which this invention pertains may make various modifications or additions to the described specific embodiments or use similar methods to substitute them, without departing from the spirit of the invention or exceeding the scope defined by the appended claims.
Claims
1. A radiation-voltage isotope battery based on a composite energy transport layer, characterized in that, It includes a radioactive source layer (1), a semiconductor material layer (2), and a graphene quantum dot composite energy transfer layer (3) disposed between the radioactive source layer (1) and the semiconductor material layer (2); wherein, the graphene quantum dots (4) and graphene-like materials (5) are combined to form the graphene quantum dot composite energy transfer layer (3). The graphene quantum dot composite energy transport layer (3) and the semiconductor material layer (2) that form a heterogeneous interface constitute a semiconductor energy conversion unit (6). The graphene material (5) constructs a continuous conductive channel to promote the interface charge transfer between the graphene quantum dot composite energy transport layer (3) and the semiconductor material layer (2) and reduce carrier recombination loss. Power output method: The graphene quantum dot (4) provides a tunable energy level structure and generates fluorescence radiation under the radiation excitation of the radiation source layer (1). The semiconductor energy conversion unit (6) absorbs the fluorescence and generates electron-hole pairs to realize power output; The semiconductor energy conversion unit (6) directly receives the radiation excitation of the radiation source to generate electron-hole pairs to realize power output.
2. The radiation-voltage isotope battery based on a composite energy transport layer according to claim 1, characterized in that, The fluorescence emission wavelength can be adjusted by controlling the particle size and surface functional groups of the graphene quantum dots (4) to adapt to the absorption range of different semiconductor materials.
3. A radiation-voltage isotope battery based on a composite energy transport layer according to claim 1, characterized in that, The emission wavelength of the fluorescence radiation generated by the graphene quantum dot (4) is within the absorption band range of the semiconductor energy conversion unit (6).
4. A radiation-voltage isotope battery based on a composite energy transport layer according to claim 1, characterized in that, The graphene quantum dots (4) are attached to or dispersed on the surface of the graphene-like material (5) through non-covalent interactions.
5. A radiation-voltage isotope battery based on a composite energy transport layer according to claim 1, characterized in that, The graphene material (5) is reduced graphene oxide, graphene grown by chemical vapor deposition, or a combination thereof.
6. A radiation-voltage isotope battery based on a composite energy transport layer according to claim 1, characterized in that, The semiconductor material layer (2) is silicon, gallium arsenide, cadmium telluride, indium phosphide, gallium nitride, silicon carbide or its epitaxial intrinsic layer structure.
7. A radiation-voltage isotope battery based on a composite energy transport layer according to claim 1, characterized in that, The thickness of the graphene quantum dot composite energy transfer layer (3) is 50 nm–1 μm, preferably 100 nm–500 nm.
8. A radiation-voltage isotope battery based on a composite energy transport layer according to claim 1, characterized in that, The radioactive source layer (1) is a β radioactive source or an α radioactive source.
9. A method for preparing a radiation-voltage isotope battery as described in any one of claims 1 to 8, characterized in that, Includes the following steps: S1. Prepare a radioactive source layer (1); S2. Combine graphene quantum dots (4) with graphene-like materials (5) to form a graphene quantum dot composite energy transmission layer (3), and then transfer or coat it onto the surface of a semiconductor material layer (2) to form a semiconductor energy conversion unit (6); S3. Cover the surface of the prepared semiconductor energy conversion unit (6) with the radioactive source layer (1), and simultaneously lead out electrodes and encapsulate them.