Ion source

By controlling the temperature distribution of the vaporizer, the problem of easy clogging at the connection between the crucible and the nozzle in the ion implantation process of SiC devices was solved, thereby improving the aluminum ion generation efficiency and extending the life of the vaporizer.

CN122117730APending Publication Date: 2026-05-29NISSIN ION EQUIPMENT CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
NISSIN ION EQUIPMENT CO LTD
Filing Date
2025-06-13
Publication Date
2026-05-29

AI Technical Summary

Technical Problem

In the ion implantation process of SiC devices, the uneven temperature distribution of the crucible in the existing vaporizer leads to low aluminum ion generation efficiency, and the connection between the crucible and the nozzle is prone to clogging, affecting the life of the vaporizer.

Method used

The control device adjusts the set temperature of the vaporizer according to the temperature or relevant parameters of the plasma generation chamber, so that the temperature of the connection between the crucible and the nozzle is higher than that of the center of the crucible, thereby inhibiting aluminum liquefaction, improving wettability, and preventing nozzle clogging.

Benefits of technology

It effectively suppressed nozzle clogging, improved the lifespan of the vaporizer, and increased the efficiency of aluminum ion generation.

✦ Generated by Eureka AI based on patent content.

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Abstract

The present application provides an ion source, inhibits clogging of a nozzle, and improves the life of a vaporizer. An ion source (IS1, IS2, IS3) includes a vaporizer (C1, C2, C3) having a hollow crucible (2, 32) having a long side direction in one direction and a nozzle (3) connected to the crucible (2, 32); a plasma generation chamber (14) to which a gas is supplied from the crucible (2, 32) through the nozzle (3); and a control device (C) that controls a set temperature of the vaporizer (C1, C2, C3). The control device (C) controls the set temperature of the vaporizer (C1, C2, C3) based on a temperature of the plasma generation chamber (14) or a parameter having a correlation with the temperature of the plasma generation chamber (14) so that a temperature of a connection portion (P2) of the crucible (2, 32) and the nozzle (3) is higher than a temperature of a central portion (P1) of the crucible (2, 32) in the long side direction of the crucible (2, 32).
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