A method for constructing an inorganic-organic gradient interface on a perovskite solar cell

Abstract

The application discloses a method for constructing an inorganic-organic gradient interface on a perovskite solar cell, and belongs to the technical field of perovskite solar cells. The method comprises the following steps: vacuumizing and cleaning the perovskite solar cell; pretreating an outermost aluminum oxide layer; depositing a gaseous first precursor on the aluminum oxide layer after activation to form an inorganic silicon layer; depositing a gaseous second precursor on the inorganic silicon layer after activation to form an inorganic-organic gradient layer; and depositing a gaseous third precursor on the inorganic-organic gradient layer to form an organic layer. The hardness of the inorganic silicon layer is greater than that of the inorganic-organic gradient layer, and the hardness of the inorganic-organic gradient layer is greater than that of the organic layer. The inorganic-organic gradient interface can delay the impact of external stress on the cell, enhance the water-oxygen barrier performance of the surface, provide organic active sites through the organic layer, provide help for the bonding of the subsequent adhesive film, make the combination between the layers more compact, and improve the environmental stress impact resistance.

Description

Technical Field

[0001] This invention relates to a method for constructing an inorganic-organic gradient interface on a perovskite solar cell, belonging to the field of perovskite solar cell technology. Background Technology

[0002] Perovskite solar cells have attracted much attention due to their conversion efficiency advancements being far faster than those of crystalline silicon cells, and their applications are becoming increasingly widespread. Currently, however, stress accumulation zones exist within the modules during the manufacturing process of perovskite solar cells, affecting their stability during outdoor operation. Furthermore, the current mainstream alumina protection scheme for metal electrodes is not effective enough in protecting against moisture intrusion and mechanical damage during module manufacturing, ultimately impacting the overall module efficiency. Summary of the Invention

[0003] The purpose of this invention is to provide a method for constructing an inorganic-organic gradient interface on a perovskite solar cell, thereby solving the problems of stress accumulation and weak protection in the prior art.

[0004] To achieve the above objectives, the present invention employs the following technical solution: This invention provides a method for constructing an inorganic-organic gradient interface on a perovskite solar cell, comprising: The perovskite solar cells were placed in a sealed cavity and vacuum-cleaned. Oxygen plasma pretreatment and argon plasma etching were performed on the outermost alumina layer of the perovskite solar cell. The gaseous first precursor is activated and then deposited on the alumina layer to form an inorganic silicon layer. The gaseous second precursor is activated and then deposited on the inorganic silicon layer to form an inorganic-organic gradient layer. A gaseous third precursor is deposited on the inorganic-organic gradient layer to form an organic layer, thus completing the construction of the inorganic-organic gradient interface. The hardness of the inorganic silicon layer is greater than that of the inorganic-organic gradient layer, and the hardness of the inorganic-organic gradient layer is greater than that of the organic layer.

[0005] Furthermore, the vacuum cleaning includes: reducing the vacuum level of the sealed cavity to below 5E-3Pa, introducing oxygen for cleaning, and then introducing argon for cleaning.

[0006] Furthermore, during the oxygen plasma pretreatment process, the oxygen flow rate is 90~110 sccm, the pressure in the sealed cavity is 40~60 Pa, and the plasma power density is 1800~2200 mW / cm³. 2 The duration is 2-3 minutes.

[0007] Furthermore, during the argon plasma etching process, the oxygen flow rate is 90-110 sccm, the pressure in the sealed cavity is 20-40 Pa, and the plasma power density is 2300-2700 mW / cm². 2 The duration is 0.5 to 2 minutes.

[0008] Furthermore, the process of activating the gaseous first precursor and depositing it on the alumina layer to form an inorganic silicon layer includes: After activating the gaseous first precursor with plasma, it is deposited on the alumina layer under the first deposition conditions to form an inorganic silicon layer with a thickness of 5~10nm and a Young's modulus of 20~50GPa. The first precursor is selected from one or more of tetraethoxysilane, hexamethyldisiloxane, octamethylcyclotetrasiloxane and 2,4,6,8-tetramethylcyclotetrasiloxane; The first deposition conditions include: an oxygen flow rate of 50–70 sccm, an argon flow rate of 20–40 sccm, a first precursor flow rate of 5–7 sccm, a pressure of 25–33 Pa in the sealed cavity, and a plasma power density of 2000–2700 mW / cm³. 2 The deposition rate was 10~50 nm / min, the temperature was 70~80℃, and the deposition time was 8~10 minutes.

[0009] Furthermore, if the first precursor is tetraethoxysilane, then the first deposition conditions further include: The flow rate ratio of oxygen, tetraethoxysilane and argon is (10~12):1:(5~12).

[0010] Furthermore, the step of activating the gaseous second precursor and depositing it on the inorganic silicon layer to form an inorganic-organic gradient layer includes: After activating the gaseous second precursor with plasma, it is deposited on the inorganic silicon layer under the second deposition conditions to form an inorganic-organic gradient layer with a thickness of 10~20nm and a Young's modulus of 5~20GPa. The second precursor is selected from one or more of 3-(trimethoxysilyl)propyl methacrylate, triethoxyvinylsilane, vinyltriethoxysilane, and perfluorooctyltriethoxysilane; The second deposition conditions include: an oxygen flow rate of 3-6 sccm, an argon flow rate of 50-60 sccm, a second precursor flow rate of 10-20 sccm, a pressure of 30-34 Pa in the sealed cavity, and a plasma power density of 100-500 mW / cm³. 2The duty cycle is 10-40%, and the duty cycle decreases by 3-6% every 2-3 minutes. The deposition rate is 0.5-2 nm / min, the temperature is 50-70℃, and the deposition time is 7-9 minutes.

[0011] Furthermore, if the second precursor is 3-(trimethoxysilyl)propyl methacrylate, then the second deposition conditions also include: The flow rate ratio of oxygen, 3-(trimethoxysilyl)propyl methacrylate and argon is 1:(4~6):(14~20).

[0012] Furthermore, the deposition of the gaseous third precursor onto the inorganic-organic gradient layer to form an organic layer includes: The third precursor is deposited on the inorganic-organic gradient layer under the third deposition conditions to form an organic layer with a thickness of 50~100nm and a Young's modulus of 0.5~5GPa; The third precursor is selected from one or more of ethoxylated trimethylolpropane triacrylate, polyethylene glycol diacrylate, N-(trimethoxysilylpropyl)urethane, and thiol-enylsiloxane; The third deposition conditions include: argon flow rate of 550~570 sccm, third precursor flow rate of 8~12 sccm, pressure of the sealed cavity of 30~34 Pa, deposition rate of 10~15 nm / min, temperature of 50~70℃, and deposition time of 5~8 minutes. After the organic layer is formed, the process also includes curing with UV irradiation for 45-60 seconds.

[0013] Furthermore, if the third precursor is ethoxylated trimethylolpropane triacrylate, then the third deposition conditions further include: The flow rate ratio of argon to ethoxylated trimethylolpropane triacrylate is (50~70):1.

[0014] Compared with the prior art, the beneficial effects achieved by the present invention are: This invention provides a method for constructing an inorganic-organic gradient interface on a perovskite solar cell. The method involves constructing an inorganic-organic gradient interface composed of an inorganic silicon layer, an inorganic-organic gradient layer, and an organic layer, which simultaneously provides water and oxygen barrier functions. The hardness of the inorganic silicon layer is greater than that of the inorganic-organic gradient layer, and the hardness of the inorganic-organic gradient layer is greater than that of the organic layer. This smoothly decreasing hardness gradient interface structure achieves stress buffering, fundamentally solving the problem of hard-on-hard contact between the alumina layer and the organic encapsulation material. It also addresses the stress abrupt changes and compatibility issues caused by direct contact between the metal electrode layer and the polymer encapsulation adhesive in traditional perovskite solar cells. The inorganic-organic gradient interface delays the impact of external stress on the cell while enhancing the water and oxygen barrier performance of the electrode surface. Furthermore, it maintains the integrity of the metal electrode layer during the process and provides organic active sites through the organic layer, aiding in the subsequent adhesion of the encapsulation film. This results in tighter bonding between the layers of the perovskite solar cell and improved resistance to environmental stress impact. Stress buffering is achieved in the following ways: Al-O-Si chemical bonds exist at the interface between the alumina layer and the inorganic silicon layer. These bonds firmly bind the alumina to the substrate, allowing stress to be transmitted to the upper layers and enhancing the waterproofness of the alumina. In the middle inorganic-organic gradient layer, stress is dissipated by the organic chains. The top organic layer is a rubber-like region where abundant organic chains further dissipate the stress transmitted from the lower layers through their own deformation and movement. At the same time, it adheres better to encapsulating films such as POE, forming a large and complete organic stress dissipation system. Attached Figure Description

[0015] Figure 1 This is a flowchart of a method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to an embodiment of the present invention; Figure 2 This is a schematic diagram of the structure of a perovskite solar cell with a well-constructed inorganic-organic gradient interface provided in an embodiment of the present invention.

[0016] In the figure: 1. Rigid substrate; 2. Transparent conductive layer; 3. First charge transport layer; 4. Perovskite absorber layer; 5. Second charge transport layer; 6. Metal electrode and alumina composite layer; 7. Inorganic silicon layer; 8. Inorganic-organic gradient layer; 9. Organic layer; 10. Perovskite solar cell. Detailed Implementation

[0017] The present invention will be further described below with reference to the accompanying drawings. The following embodiments are only used to illustrate the technical solution of the present invention more clearly, and should not be used to limit the scope of protection of the present invention.

[0018] Example 1

[0019] Step 1: Fabricate perovskite solar cells.

[0020] Step 1.1: Fabricate perovskite solar cells using a glass-based perovskite thin-film solar cell production line. This perovskite solar cell, from bottom to top, includes a glass substrate, a flexible conductive film, a first charge transport layer 3, a perovskite absorber layer 4, a second charge transport layer 5, a metal electrode and an alumina composite layer 6, and a series-parallel circuit composed of three laser-etched lines. The glass substrate is... Figure 2 The rigid substrate 1 has a tempered glass substrate with a thickness of 2.8 mm; the flexible conductive film is made of fluorine-doped tin oxide with a thickness of 700 nm. Figure 2 The transparent conductive layer 2; the first charge transport layer 3 is made of NiO2 with a thickness of 30 nm; the perovskite absorber layer 4 is made of FAPbI3, where FA refers to CH(NH2)2, with a thickness of 600 nm; the second charge transport layer 5 is made of PCBM with a thickness of 80 nm; the metal electrode and alumina composite layer 6 consists of indium tin oxide, copper and alumina from bottom to top, with thicknesses of 50 nm, 300 nm and 150 nm, respectively.

[0021] Step 1.2: Wiring is done on the perovskite solar cell. 5mm wide and 0.08mm thick conductive tape is attached to the positive and negative electrode areas at the edge of the cell. 5mm wide and 0.08mm thick insulating tape and 4mm wide and 0.5mm thick tinned copper strip are used as busbars. The busbars are placed at the side edge where the wires exit.

[0022] The preparation was obtained through step 1. Figure 2 The perovskite solar cell 10 shown.

[0023] Step 2: Construct an inorganic-organic gradient interface on the perovskite solar cell.

[0024] Step 2.1: Place the perovskite solar cell on the stage of the PECVD equipment, fix it, close the cover and start the PECVD equipment.

[0025] The Chinese name for PECVD is Plasma Enhanced Chemical Vapor Deposition.

[0026] Step 2.2: Pretreatment of alumina layer.

[0027] The PECVD equipment was evacuated to a vacuum level below 5E-3 Pa, and the cleaning oxygen was turned on. The conditions at this point were: oxygen flow rate 100 sccm, chamber pressure 50 Pa, and plasma power density 2000 mW / cm². 2 With an RF bias of 30W and a processing time of 2 minutes, the plasma source and RF bias are turned off. Argon gas is introduced for 10 seconds to purge the chamber at a flow rate of 100 sccm and a chamber pressure of 30 Pa. Maintaining the argon flow rate and chamber pressure, the plasma source is turned on, with a plasma power density of 2500 mW / cm². 2The processing time is 1 minute. The plasma source is then turned off, while the argon flow rate remains constant. The stage is heated to 80 degrees Celsius.

[0028] Step 2.3: Deposition of inorganic silicon layer.

[0029] The bubbler temperature of the tetraethylsilane source was set to 80℃, and the tetraethylsilane flow rate was set to 6 sccm. After the tetraethylsilane flow rate stabilized, oxygen was turned on at a flow rate of 60 sccm, and the argon flow rate was adjusted to 30 sccm. The cavity pressure was set to 27 Pa. After stabilization, the plasma source was turned on, and the plasma power density was set to 2500 mW / cm². 2 The RF bias was 50W, and the deposition time was 9 minutes. After deposition, the following sequence was followed: tetraethylsilane source, oxygen, plasma source, and RF bias were shut off. Simultaneously, argon gas was used to purge the chamber at a flow rate of 200 sccm, maintaining the chamber pressure at 100 Pa. The stage was then cooled from 80°C to 50°C at a rate of 25°C / min. After this process, a layer of perovskite solar cell was grown on the topmost alumina layer. Figure 2 The inorganic silicon layer 7 is shown.

[0030] Step 2.4: Deposition of inorganic-organic gradient layer.

[0031] The bubbler temperature for the 3-(trimethoxysilyl)propyl methacrylate source was set to 60℃, and the 3-(trimethoxysilyl)propyl methacrylate flow rate was set to 16 sccm. After the 3-(trimethoxysilyl)propyl methacrylate flow rate stabilized, oxygen was turned on at a flow rate of 4 sccm, and the argon flow rate was adjusted to 56 sccm. The cavity pressure was set to 32 Pa. After stabilization, the plasma source was turned on, and the plasma power density was set to 200 mW / cm². 2 The pulse mode duty cycle was 20%, decreasing by 5% every 2 minutes, with an RF bias of 10W and a deposition time of 7 minutes. After deposition, the following sequence was followed: 3-(trimethoxysilyl)propyl methacrylate source, oxygen, plasma source, and RF bias were shut off, while argon gas was continuously purged into the chamber at a flow rate of 200 sccm, maintaining the chamber pressure at 100 Pa. The stage temperature was increased from 10℃ / min to 70℃, and annealed in situ for 5 minutes. Through the above process, an inorganic-organic gradient layer 8 was grown on the inorganic silicon layer 7.

[0032] Step 2.5: Deposition of organic layer.

[0033] The stage temperature was maintained at 70°C, the bubbler temperature for the ethoxylated trimethylolpropane triacrylate source was set to 65°C, and the ethoxylated trimethylolpropane triacrylate flow rate was set to 10 sccm. After the ethoxylated trimethylolpropane triacrylate flow rate stabilized, the argon flow rate was adjusted to 560 sccm and the cavity pressure to 32 Pa. After stabilization, deposition began for 8 minutes. After deposition, the material was cured for 50 seconds using UV irradiation at a wavelength of 365 nm and an energy of 100 mW / cm². Through the above process, an organic layer 9 was grown on the inorganic-organic gradient layer 8.

[0034] Example 2

[0035] The difference between this embodiment and Embodiment 1 is that: in step 2.3, tetraethylsilane is replaced with hexamethyldisiloxane; in step 2.4, 3-(trimethoxysilyl)propyl methacrylate is replaced with a mixture of 3-(trimethoxysilyl)propyl methacrylate and tetraethylsilane, wherein 3-(trimethoxysilyl)propyl methacrylate accounts for 90 wt% and tetraethylsilane accounts for 10 wt%.

[0036] Example 3

[0037] The difference between this embodiment and Embodiment 1 is that in step 2.3, tetraethylsilane is replaced with octamethylcyclotetrasiloxane, and the plasma power density is changed from 2500 mW / cm² in step 2.3. 2 Reduced to 2000 mW / cm 2 In step 2.4, 3-(trimethoxysilyl)propyl methacrylate is replaced with vinyltriethoxysilane, and the plasma power density is reduced from 200 mW / cm². 2 Reduced to 170 mW / cm 2 .

[0038] Example 4

[0039] The difference between this embodiment and Embodiment 1 is that in step 2.3, tetraethylsilane is replaced with octamethylcyclotetrasiloxane, and the plasma power density is changed from 2500 mW / cm² in step 2.3. 2 Reduced to 2000 mW / cm 2 In step 2.4, 3-(trimethoxysilyl)propyl methacrylate is replaced with 3-(trimethoxysilyl)propyl methacrylate, ethylene glycol diacrylate, and thiol-ene siloxane, wherein 3-(trimethoxysilyl)propyl methacrylate accounts for 60 wt%, ethylene glycol diacrylate accounts for 30 wt%, and thiol-ene siloxane accounts for 10 wt%. In step 2.4, the plasma power density is changed from 200 mW / cm². 2 Reduced to 170 mW / cm 2.

[0040] Comparative Example This comparative example fabricates a perovskite solar cell using the following method: Step 1: Fabricate perovskite solar cells using a glass-based perovskite thin-film battery production line. This perovskite solar cell, from bottom to top, includes a glass substrate, a flexible conductive film, a first charge transport layer 3, a perovskite absorber layer 4, a second charge transport layer 5, a metal electrode and an alumina composite layer 6, and a series-parallel circuit composed of three laser-etched lines. The glass substrate is... Figure 2 The rigid substrate 1 has a tempered glass substrate with a thickness of 2.8 mm; the flexible conductive film is made of fluorine-doped tin oxide with a thickness of 700 nm. Figure 2 The transparent conductive layer 2; the first charge transport layer 3 is made of NiO2 with a thickness of 30 nm; the perovskite absorber layer 4 is made of FAPbI3, where FA refers to CH(NH2)2, with a thickness of 600 nm; the second charge transport layer 5 is made of PCBM with a thickness of 80 nm; the metal electrode and alumina composite layer 6 consists of indium tin oxide, copper and alumina from bottom to top, with thicknesses of 50 nm, 300 nm and 150 nm, respectively.

[0041] Step 2: Wiring is done on the perovskite solar cell. 5mm wide and 0.08mm thick conductive tape is attached to the positive and negative electrode areas at the edge of the cell. 5mm wide and 0.08mm thick insulating tape and 4mm wide and 0.5mm thick tinned copper strip are used as busbars. The busbars are placed at the side edge where the wires exit.

[0042] The open-circuit voltage, short-circuit current density, fill factor, and photoelectric conversion efficiency of the batteries prepared in the four embodiments and one comparative example were tested. The testing method was as follows: a solar simulator and digital source meter were used, and Oriel 2.0 software was employed, with the voltage range set to -0.1 to 60V. The effective area of ​​the battery used in the test was 783 cm². 2 The scanning direction was reverse scan, and the scanning rate was 10 mV / s. The open-circuit voltage, short-circuit current density, fill factor, and photoelectric conversion efficiency of the finished product were measured. The test results are shown in Table 1.

[0043] The batteries prepared in the four embodiments and one comparative example were subjected to the following three tests, and then the open-circuit voltage, short-circuit current density, fill factor, and photoelectric conversion efficiency were tested again using the same method. The test results are shown in Tables 1, 2, and 3.

[0044] Experiment 1: The battery was left unencapsulated and exposed to an environment of 25°C, RH controlled at 85%, and no light for 500 hours for stability testing.

[0045] Experiment 2: The battery was flexibly packaged and subjected to a thermal shock test followed by 15 unidirectional bending tests in each of the two directions, for a total of 30 tests.

[0046] Experiment 3: The battery was made with a rigid substrate and rigid encapsulation, and two rounds of thermal shock tests were performed.

[0047] In the above tests, the thermal shock test was performed in accordance with standard IEC61215-2, and the unidirectional bending test was performed in accordance with standard IEC61215-2.

[0048] Table 1 - Comparison of Data Before and After Experiment 1

[0049] Table 2 - Comparison of data before and after Experiment 2

[0050] Table 3 - Comparison of data before and after Experiment 3

[0051] In Tables 1, 2, and 3, Uoc is the open-circuit voltage in volts, and Jsc is the short-circuit current density in mA / cm². 2 PCE stands for photoelectric conversion efficiency.

[0052] As can be seen from the data in Tables 1, 2 and 3, the water resistance of the battery with the inorganic-organic gradient interface is significantly improved compared to the comparative example. After the test, the PCE retention of Examples 1 to 4 is much higher than that of the comparative example, allowing for long-term exposure to indoor air. The battery with the inorganic-organic gradient interface exhibits excellent resistance under severe environmental impact. The PCE retention rate of Examples 1 to 4 is much better than that of the comparative example, with the best example showing almost no efficiency decay. The best example is Example 4.

[0053] The above description is only a preferred embodiment of the present invention. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A method for constructing an inorganic-organic gradient interface on a perovskite solar cell, characterized in that, include: The perovskite solar cells were placed in a sealed cavity and vacuum-cleaned. Oxygen plasma pretreatment and argon plasma etching were performed on the outermost alumina layer of the perovskite solar cell. The gaseous first precursor is activated and then deposited on the alumina layer to form an inorganic silicon layer. The gaseous second precursor is activated and then deposited on the inorganic silicon layer to form an inorganic-organic gradient layer. A gaseous third precursor is deposited on the inorganic-organic gradient layer to form an organic layer, thus completing the construction of the inorganic-organic gradient interface. The hardness of the inorganic silicon layer is greater than that of the inorganic-organic gradient layer, and the hardness of the inorganic-organic gradient layer is greater than that of the organic layer.

2. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 1, characterized in that, The vacuum cleaning process includes: reducing the vacuum level of the sealed cavity to below 5E-3Pa, introducing oxygen for cleaning, and then introducing argon for cleaning.

3. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 1, characterized in that, During the oxygen plasma pretreatment process, the oxygen flow rate is 90-110 sccm, the pressure in the sealed cavity is 40-60 Pa, and the plasma power density is 1800-2200 mW / cm³. 2 The duration is 2-3 minutes.

4. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 1, characterized in that, During the argon plasma etching process, the oxygen flow rate is 90-110 sccm, the pressure in the sealed cavity is 20-40 Pa, and the plasma power density is 2300-2700 mW / cm³. 2 The duration is 0.5 to 2 minutes.

5. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 1, characterized in that, The process of activating the gaseous first precursor and depositing it on the alumina layer to form an inorganic silicon layer includes: After activating the gaseous first precursor with plasma, it is deposited on the alumina layer under the first deposition conditions to form an inorganic silicon layer with a thickness of 5~10nm and a Young's modulus of 20~50GPa. The first precursor is selected from one or more of tetraethoxysilane, hexamethyldisiloxane, octamethylcyclotetrasiloxane and 2,4,6,8-tetramethylcyclotetrasiloxane; The first deposition conditions include: an oxygen flow rate of 50–70 sccm, an argon flow rate of 20–40 sccm, a first precursor flow rate of 5–7 sccm, a pressure of 25–33 Pa in the sealed cavity, and a plasma power density of 2000–2700 mW / cm³. 2 The deposition rate was 10~50 nm / min, the temperature was 70~80℃, and the deposition time was 8~10 minutes.

6. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 5, characterized in that, If the first precursor is tetraethoxysilane, then the first deposition conditions further include: The flow rate ratio of oxygen, tetraethoxysilane and argon is (10~12):1:(5~12).

7. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 1, characterized in that, The process of activating the gaseous second precursor and depositing it on the inorganic silicon layer to form an inorganic-organic gradient layer includes: After activating the gaseous second precursor with plasma, it is deposited on the inorganic silicon layer under the second deposition conditions to form an inorganic-organic gradient layer with a thickness of 10~20nm and a Young's modulus of 5~20GPa. The second precursor is selected from one or more of 3-(trimethoxysilyl)propyl methacrylate, triethoxyvinylsilane, vinyltriethoxysilane, and perfluorooctyltriethoxysilane; The second deposition conditions include: an oxygen flow rate of 3-6 sccm, an argon flow rate of 50-60 sccm, a second precursor flow rate of 10-20 sccm, a pressure of 30-34 Pa in the sealed cavity, and a plasma power density of 100-500 mW / cm³. 2 The duty cycle is 10-40%, and the duty cycle decreases by 3-6% every 2-3 minutes. The deposition rate is 0.5-2 nm / min, the temperature is 50-70℃, and the deposition time is 7-9 minutes.

8. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 7, characterized in that, If the second precursor is 3-(trimethoxysilyl)propyl methacrylate, then the second deposition conditions further include: The flow rate ratio of oxygen, 3-(trimethoxysilyl)propyl methacrylate and argon is 1:(4~6):(14~20).

9. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 1, characterized in that, The deposition of the gaseous third precursor onto the inorganic-organic gradient layer to form an organic layer includes: The third precursor is deposited on the inorganic-organic gradient layer under the third deposition conditions to form an organic layer with a thickness of 50~100nm and a Young's modulus of 0.5~5GPa; The third precursor is selected from one or more of ethoxylated trimethylolpropane triacrylate, polyethylene glycol diacrylate, N-(trimethoxysilylpropyl)urethane, and thiol-enylsiloxane; The third deposition conditions include: argon flow rate of 550~570 sccm, third precursor flow rate of 8~12 sccm, pressure of the sealed cavity of 30~34 Pa, deposition rate of 10~15 nm / min, temperature of 50~70℃, and deposition time of 5~8 minutes. After the organic layer is formed, the process also includes curing with UV irradiation for 45-60 seconds.

10. The method for constructing an inorganic-organic gradient interface on a perovskite solar cell according to claim 9, characterized in that, If the third precursor is ethoxylated trimethylolpropane triacrylate, then the third deposition conditions further include: The flow rate ratio of argon to ethoxylated trimethylolpropane triacrylate is (50~70):1.

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