Application of hafnium oxide-based memristor in preparation of electronic switch

Abstract

The application provides application of hafnium oxide-based memristor in preparation of electronic switches and belongs to the technical field of microelectronic materials and devices. The hafnium oxide-based memristor used in preparation of the electronic switches has a bidirectional threshold characteristic, and the structure thereof comprises, from bottom to top, an inert bottom electrode, an intermediate layer, a buffer layer and an active top electrode. The intermediate layer is a hafnium oxide film subjected to plasma treatment and annealing double treatment, the buffer layer is a silver indium antimony tellurium film, and the active top electrode is a silver electrode. The memristor can be converted from a high resistance state to a low resistance state at a threshold voltage under positive and negative voltages, and can spontaneously recover to the high resistance state when back scanning to a holding voltage. The hafnium oxide-based memristor is used in preparation of the electronic switches, the double treatment process and the AIST buffer layer complement each other, and the hafnium oxide-based memristor is endowed with comprehensive performance, so that the application requirements of high-performance and low-power-consumption electronic switches can be fully met, and the practical development of the technology is promoted.

Description

Technical Field

[0001] This invention belongs to the field of microelectronic materials and devices technology, and particularly relates to the application of a hafnium oxide-based memristor in the fabrication of electronic switches. Background Technology

[0002] Memristors, especially threshold-type memristors, are a novel type of two-terminal electronic device with fast, steep switching characteristics. Their operating principle is based on the migration of metal ions in the active electrode and the formation of conductive filaments when an applied electric field exceeds a threshold voltage (Vth), causing the device to switch instantaneously from a high-resistivity state (HRS) to a low-resistivity state (LRS). When the voltage drops below the holding voltage (Vhold), the conductive filaments spontaneously break, and the device returns to the high-resistivity state. This reversible switching behavior, driven by intrinsic material dynamics, theoretically gives it enormous potential as a next-generation high-speed, low-power electronic switching element, with applications in neuromorphic computing, reconfigurable logic, and high-density storage, supplementing or replacing some of the functions of traditional CMOS (Complementary Metal-Oxide-Semiconductor) transistors.

[0003] Among numerous candidate materials, hafnium oxide (HfO2) stands out as a promising functional layer material for constructing high-performance threshold memristors due to its high dielectric constant, excellent compatibility with CMOS methods, good chemical stability, and controllable internal oxygen vacancy defects. However, several key challenges remain in truly developing hafnium oxide-based threshold memristors into practical and reliable electronic switches: First, the switching control voltage is too high. Many unoptimized hafnium oxide-based memristors typically have high threshold voltages (e.g., several volts), far exceeding the operating voltage requirements of advanced low-power integrated circuits (usually ≤1V), leading to increased energy consumption and limiting their direct application in energy-saving systems. Second, performance uniformity and cycle stability are insufficient. Interface defects, randomly distributed oxygen vacancies, and rough film morphology in the initial hafnium oxide film result in significant randomness in the formation and breakage of conductive filaments. This manifests as large fluctuations in device switching voltage, dispersed distribution of high and low resistance states, and limited cycle life, severely impacting its repeatability and reliability as an electronic switch. The device may fail after only a few cycles, failing to meet the durability requirements of practical applications. Third, there are challenges related to current overshoot and filament control. During switching, especially when active electrodes (such as Ag) inject ions into the dielectric layer, excessive or unstable conductive filaments can easily form, leading to current runaway (overshoot). This can not only damage the device, but also make it difficult to precisely control the limiting current (Icc) at an extremely low level (such as nanoamperes). Low operating current is key to reducing power consumption.

[0004] Therefore, despite the significant advantages of hafnium oxide materials, the core challenge in realizing the practical application of hafnium oxide-based threshold memristors lies in effectively reducing their operating voltage, significantly improving the uniformity, stability, and durability of their switching characteristics, and precisely limiting their operating current to an ultra-low range through innovative device structures and fabrication methods. Existing single-film deposition or simple post-processing techniques often fall short of addressing all these bottlenecks in a coordinated manner, necessitating new technological approaches. Summary of the Invention

[0005] To address the aforementioned technical problems, this invention proposes an application of hafnium oxide-based memristors in the fabrication of electronic switches. This invention utilizes a dual-processing method combining plasma and high-temperature annealing, along with the introduction of a buffer layer of silver indium antimony tellurium, to effectively improve the electrical performance of hafnium oxide-based threshold-type memristors, and further applies them to the fabrication of electronic switches. The structural design and fabrication method of this invention have the advantages of simple and clear design, and high repeatability in fabrication and testing.

[0006] To achieve the above objectives, the present invention provides the following technical solution: This invention provides an application of a hafnium oxide-based memristor in the fabrication of electronic switches. The hafnium oxide-based memristor has bidirectional threshold characteristics, and its structure, from bottom to top, includes an inert bottom electrode, an intermediate layer, a buffer layer, and an active top electrode. The intermediate layer is a hafnium oxide (HfO2) thin film that has undergone both plasma treatment and annealing. The buffer layer is a silver indium antimony tellurium (AIST) thin film, and the active top electrode is a silver (Ag) electrode. The memristor can transition from a high-resistivity state to a low-resistivity state at the threshold voltage under both positive and negative voltages, and spontaneously recovers to the high-resistivity state when it is swept back to the holding voltage.

[0007] Furthermore, the inert bottom electrode is platinum (Pt).

[0008] Furthermore, the thickness of the hafnium oxide film in the intermediate layer is 5nm-25nm.

[0009] Furthermore, the thickness of the silver indium antimony tellurium thin film in the buffer layer is 0nm-20nm, and is not 0nm.

[0010] Furthermore, the current limiting current of the memristor is 100nA; the threshold voltage of the memristor is ≤1V.

[0011] This invention provides a method for fabricating a hafnium oxide-based memristor for the above-mentioned applications, comprising the following steps: (1) Provide an insulating substrate and fabricate an inert bottom electrode thereon; (2) A hafnium oxide thin film is grown on the inert bottom electrode using atomic layer deposition to form an intermediate layer; (3) The device with hafnium oxide thin film grown on it is subjected to plasma treatment and annealing treatment in sequence; (4) A silver indium antimony tellurium buffer layer is prepared on a hafnium oxide thin film that has undergone plasma treatment and annealing. (5) An active silver top electrode is prepared on the buffer layer.

[0012] Furthermore, in step (1), the preparation is carried out by magnetron sputtering with a sputtering power of 100W and a time of 10 minutes.

[0013] Furthermore, in step (2), the growth temperature of the atomic layer deposition method is 150°C and the growth time is 90 minutes.

[0014] Furthermore, in step (3), the plasma treatment conditions are: under an argon atmosphere, treatment is performed at a power of 85W for 10 minutes.

[0015] Further, in step (3), the annealing conditions are: annealing at 300°C for 90 minutes under a nitrogen atmosphere.

[0016] Furthermore, in step (5), the active silver top electrode is prepared by thermal evaporation and has a thickness of 50 nm.

[0017] The present invention also provides an electronic switch, including a hafnium oxide-based memristor, the hafnium oxide-based memristor having bidirectional threshold characteristics, and its structure from bottom to top including an inert bottom electrode, an intermediate layer, a buffer layer and an active top electrode; the intermediate layer is a hafnium oxide thin film treated by plasma treatment and annealing, the buffer layer is a silver indium antimony tellurium thin film, and the active top electrode is a silver electrode; The memristor can transition from a high-resistivity state to a low-resistivity state at the threshold voltage under both positive and negative voltages, and spontaneously recovers to the high-resistivity state when it is swept back to the holding voltage.

[0018] To realize the application of hafnium oxide-based memristors in low-power, high-reliability electronic switches, this invention employs a plasma treatment-high-temperature annealing dual-processing method combined with the introduction of a silver indium antimony tellurium (AIST) buffer layer. This synergistic effect from two levels—dielectric layer optimization and interface control—systematically solves the core problems restricting its switching performance: high operating voltage, poor cycle stability, and difficulty in current control. Its key principles are as follows: (1) Optimization of the dielectric layer by the dual processing method and its improvement on switching performance After undergoing both plasma treatment and high-temperature annealing, the thin film surface is effectively cleaned, resulting in reduced roughness, a denser structure, and a significant reduction in internal and interface defects. The denser and more uniform hafnium oxide dielectric layer leads to a more uniform distribution of the applied electric field, reducing local electric field distortion. This helps guide the formation of more stable and controllable ion / oxygen vacancy migration channels, rather than relying on random defects in the material. Based on this more uniform electric field and more controllable channels, the local electric field threshold required to form conductive filaments is reduced, thereby significantly lowering the device's turn-on voltage and meeting the requirements for low-power switching. Simultaneously, the randomness of the switching process is suppressed, and the formation and recovery of conductive filaments become more repeatable. This directly manifests as reduced fluctuations in threshold and holding voltages, and a fundamental improvement in cycle stability and durability (e.g., achieving more than 500 stable cycles), meeting the reliability requirements of electronic switches.

[0019] (2) Precise control of interface dynamics and current behavior by the buffer layer Based on the switching mechanism of the Ag / AIST / HfO2 / Pt structure, the introduction of the AIST buffer layer plays a key role in modulating the switching dynamics: By controlling ion implantation and suppressing current overshoot, a redox reaction occurs at the Ag / AIST interface when a positive voltage is applied to the top electrode Ag. Ag ions migrate into the AIST layer and form supersaturation, resulting in conductive silver-rich precipitates. This process not only facilitates the subsequent oxidation and dissolution of Ag, but its core function is to buffer and limit the instantaneous implantation of excess Ag ions into the hafnium oxide layer, preventing the disordered and excessive growth of conductive filaments and effectively suppressing current overshoot during switching. This controlled ion supply mechanism promotes the formation of thicker and more stable conductive filaments in the hafnium oxide layer, enabling the device to enter a low-resistance state. When a reverse voltage is applied, the filaments can be effectively and completely oxidized and dissolved, and the device reversibly returns to a high-resistance state. This mechanism ensures that switching operations can be completed with extremely low limiting currents and exhibits symmetrical bidirectional threshold characteristics, which is the core of achieving ultra-low power switching.

[0020] Compared with the prior art, the present invention has the following advantages and technical effects: This invention utilizes hafnium oxide-based memristors in the fabrication of electronic switches. The dual-process fabrication of the hafnium oxide-based memristor establishes the physical foundation for low voltage and high uniformity at the dielectric layer level; while the AIST buffer layer enables precise control of switching current and filament behavior at the interfacial reaction kinetics level. These two processes complement each other, jointly endowing the hafnium oxide-based memristor with comprehensive performance characteristics such as low operating voltage, high cycle stability, excellent switching uniformity, and ultra-low operating current, fully meeting the application requirements of high-performance, low-power electronic switches and powerfully promoting the practical application of this technology. Attached Figure Description

[0021] The accompanying drawings, which form part of this invention, are used to provide a further understanding of the invention. The illustrative embodiments of the invention and their descriptions are used to explain the invention and do not constitute an undue limitation of the invention. In the drawings: Figure 1 This is a schematic diagram of the fabrication process of the hafnium oxide-based memristor of the present invention; Figure 2 This is a schematic diagram of the structure of the hafnium oxide-based memristor obtained in an embodiment of the present invention, wherein 203 is the top electrode Ag, 202 is the buffer layer AIST, 201 is the dielectric layer HfO2, and 200 is the Pt bottom electrode; Figure 3 The diagram shows the electrical IV characteristics of the hafnium oxide-based memristor prepared in Example 1 under 50 cycles. Figure 4 This is a statistical distribution diagram of 500 high and low resistance states of the hafnium oxide-based memristor prepared in Example 1. Figure 5 The uniformity and yield of the array of ten different devices randomly selected from the hafnium oxide-based memristors prepared in Example 1 were tested. Figure 6 The following is a diagram showing the electrical IV characteristics of the initial memristor device before dual processing in Comparative Example 1 under 50 cycles. Figure 7 This is a statistical chart showing the distribution of 50 high and low resistance states of the initial memristor device before dual processing in Comparative Example 1. Figure 8 The above is a statistical distribution of the average forward threshold turn-on voltage for Comparative Example 1 (Device 1, without dual treatment), Comparative Example 2 (Device 2, only plasma treated without high-temperature annealing), and Example 1 (Device 3, hafnium oxide-based memristor). Detailed Implementation

[0022] Various exemplary embodiments of the present invention will now be described in detail. This detailed description should not be considered as a limitation of the present invention, but rather as a more detailed description of certain aspects, features, and embodiments of the present invention.

[0023] It should be understood that the terminology used in this invention is merely for describing particular embodiments and is not intended to limit the invention. Furthermore, with respect to numerical ranges in this invention, it should be understood that each intermediate value between the upper and lower limits of the range is also specifically disclosed. Every smaller range between any stated value or intermediate value within a stated range, and any other stated value or intermediate value within said range, is also included in this invention. The upper and lower limits of these smaller ranges may be independently included or excluded from the range.

[0024] Unless otherwise stated, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art. While only preferred methods and materials have been described herein, any methods and materials similar or equivalent to those described herein may be used in the implementation or testing of this invention. All references to this specification are incorporated by way of citation to disclose and describe methods and / or materials associated with those references. In the event of any conflict with any incorporated reference, the content of this specification shall prevail.

[0025] Various modifications and variations can be made to the specific embodiments described in this specification without departing from the scope or spirit of the invention, as will be apparent to those skilled in the art. Other embodiments derived from this specification will also be apparent to those skilled in the art. This specification and embodiments are merely exemplary.

[0026] The terms “include,” “including,” “have,” “contain,” etc., used in this article are all open-ended terms, meaning that they include but are not limited to.

[0027] This invention provides an application of a hafnium oxide-based memristor in the fabrication of electronic switches. The hafnium oxide-based memristor has bidirectional threshold characteristics, and its structure from bottom to top includes an inert bottom electrode, an intermediate layer, a buffer layer, and an active top electrode. The intermediate layer is a hafnium oxide thin film that has undergone plasma treatment and annealing, the buffer layer is a silver indium antimony tellurium thin film, and the active top electrode is a silver electrode. This memristor can transition from a high-resistivity state to a low-resistivity state at the threshold voltage under both positive and negative voltages, and spontaneously recovers to the high-resistivity state when it is swept back to the holding voltage.

[0028] In a preferred embodiment of the present invention, the inert bottom electrode is platinum.

[0029] In a preferred embodiment of the present invention, the thickness of the hafnium oxide film in the intermediate layer is 5nm-25nm.

[0030] In a preferred embodiment of the present invention, the thickness of the silver indium antimony tellurium thin film in the buffer layer is 0nm-20nm, and is not 0.

[0031] In a preferred embodiment of the present invention, the current limiting current of the memristor is 100nA; the threshold voltage of the memristor is ≤1V.

[0032] The key principle behind the dual-processing method combined with high-temperature annealing in this invention, which significantly improves the bidirectional threshold characteristics of hafnium oxide-based memristors, is as follows: Plasma and annealing treatments clean the film surface, reduce roughness, increase density, decrease interface defects, and create a more uniform electric field distribution, which helps form stable and controllable ion / oxygen vacancy migration channels. In a denser film, the conductive path is less affected by random defects, thus reducing the local electric field required to form conductive filaments and lowering the threshold voltage of the switching device. Simultaneously, the uniform structure makes the formation and recovery of conductive filaments more repeatable, significantly improving cycle stability.

[0033] The switching mechanism of threshold memristor devices based on the Ag / AIST / HfO2 / Pt structure can be attributed to the redox reaction of the Ag conductive filaments at the active electrode in the intermediate HfOx layer. The addition of the AIST buffer layer further limits the formation of excessive Ag conductive filaments. When the device is in its initial state, a forward voltage is applied to the top active Ag electrode, and a redox reaction occurs at the Ag / AIST interface. Accompanied by the migration of Ag ions to the AIST buffer layer, the AIST layer becomes supersaturated with Ag ions and generates conductive silver-rich precipitates. This facilitates the oxidation and dissolution of Ag, effectively reduces the device turn-on voltage, and suppresses current overshoot. As Ag ions continuously migrate to the Pt bottom electrode, are reduced, and eventually accumulate to form stable and robust conductive filaments, the device enters a low-resistance state. When a reverse bias voltage is applied, the conductive filaments break as Ag atoms are oxidized to Ag ions, and the device returns to a high-resistance state.

[0034] This invention also provides a method for fabricating a hafnium oxide-based memristor for the above applications (see schematic diagram of the fabrication process). Figure 1 ), including the following steps: (1) Provide an insulating substrate and fabricate an inert bottom electrode thereon; (2) A hafnium oxide (HfO2) thin film is grown on the inert bottom electrode using atomic layer deposition to form an intermediate layer; (3) The device with hafnium oxide thin film grown on it is subjected to plasma treatment and annealing treatment in sequence; (4) A silver indium antimony tellurium buffer layer is prepared on a hafnium oxide thin film that has undergone plasma treatment and annealing. (5) An active silver top electrode is prepared on the buffer layer.

[0035] More specifically, the method for fabricating a hafnium oxide-based memristor in this embodiment of the invention (see schematic diagram of the fabrication process) Figure 1 Specifically, it includes the following steps: (1) The insulating substrate was ultrasonically cleaned in an ultrasonic machine with 60W power for 10 minutes in sequence with trichloroethylene, acetone, ethanol and deionized water to remove dust and impurities from the substrate surface and then dried with an air gun. (2) A Pt bottom electrode was grown on an insulating substrate by magnetron sputtering at a growth pressure of 1 Pa, a growth power of 100 W, and a growth time of 10 minutes. (3) A dielectric layer HfO2 (i.e., intermediate layer) was grown on the Pt bottom electrode using atomic layer deposition method. The growth pressure was 2.67 Pa, the growth temperature was 150 °C, and the growth time was 90 minutes. (4) The device was treated using plasma treatment method, with Ar as the treatment atmosphere, 85W as the treatment power, and 10min as the treatment time; (5) The device is treated by high-temperature annealing, with N2 annealing atmosphere, 300℃ annealing temperature and 90min annealing time; (6) A buffer layer AIST was grown on an HfO2 thin film substrate by magnetron sputtering at a growth pressure of 1 Pa, a growth power of 60 W, and a growth time of 5 minutes. (7) An active metal electrode Ag was deposited on top of the buffer layer AIST using a thermal evaporation deposition method at a growth pressure of 3 × 10⁻⁶. -4 Pa (i.e., 3E-4Pa), the mask aperture is 300μm, and the thickness is 50nm.

[0036] A schematic diagram of the hafnium oxide-based memristor obtained in this embodiment of the invention is shown below. Figure 2 In this configuration, 203 is the top electrode Ag, 202 is the buffer layer AIST, 201 is the dielectric layer HfO2, and 200 is the Pt bottom electrode.

[0037] The magnetron sputtering method, atomic layer deposition method, plasma treatment, annealing treatment, and thermal evaporation coating method in the embodiments of the present invention are all conventional techniques in the field. Therefore, the specific operation process in the embodiments will not be described in detail.

[0038] The technical solution of the present invention will be further illustrated by the following embodiments.

[0039] Example 1 A method for fabricating a hafnium oxide-based memristor specifically includes the following steps: (1) The insulating substrate was ultrasonically cleaned in an ultrasonic machine with 60W power for 10 minutes in sequence with trichloroethylene, acetone, ethanol and deionized water to remove dust and impurities from the substrate surface and then dried with an air gun. (2) A Pt bottom electrode was grown on an insulating substrate by magnetron sputtering at a growth pressure of 1 Pa, a growth power of 100 W, and a growth time of 10 minutes. (3) An intermediate layer HfO2 was grown on the Pt bottom electrode using atomic layer deposition (ALD). The growth pressure was 2.67 Pa, the growth temperature was 150 °C, and the growth time was 90 minutes. The thickness of the resulting HfO2 intermediate layer was 10 nm. (4) The device was treated using plasma treatment method, with Ar as the treatment atmosphere, 85W as the treatment power, and 10min as the treatment time; (5) The device is treated by high-temperature annealing, with N2 annealing atmosphere, 300℃ annealing temperature and 90min annealing time; (6) A buffer layer AIST was grown on an HfO2 thin film substrate by magnetron sputtering. The growth pressure was 1 Pa, the growth power was 60 W, the growth time was 5 minutes, and the thickness of the buffer layer AIST was 10 nm. (7) The active top electrode Ag was deposited on the buffer layer AIST using a thermal evaporation coating method at a growth pressure of 3×10⁻⁶. -4 Pa, with a mask aperture of 300 μm and a thickness of 50 nm, yielded a hafnium oxide-based memristor.

[0040] Comparative Example 1 Same as Example 1, except that the plasma treatment and high-temperature annealing steps in steps (4) and (5) are omitted to obtain the initial memristor device before double treatment.

[0041] Comparative Example 2 Same as Example 1, except that the high-temperature annealing step in step (5) is omitted, resulting in a device that has not undergone high-temperature annealing.

[0042] Performance testing The hafnium oxide-based memristor prepared in Example 1 was subjected to electrical tests, and its electrical IV characteristics under 50 cycles are shown in the figure below. Figure 3 As shown, the memristor exhibits obvious bidirectional threshold characteristics. Under a current limit of 100nA, the positive and negative turn-on voltage amplitudes of the device are both 1V. When the voltage is swept back, it can spontaneously return from the low-resistivity state LRS to the high-resistivity state HRS.

[0043] Figure 4 The figure shows the cyclic statistical distribution of 500 high and low resistance states of the hafnium oxide-based memristor prepared in Example 1. It can be seen that the threshold device exhibits excellent resistance distribution uniformity.

[0044] Figure 5 Ten different hafnium oxide-based memristors prepared in Example 1 were randomly selected for array uniformity and yield testing. The average values ​​of the negative and positive threshold voltages were 0.534V and 0.519V, respectively, with standard deviations as low as 0.033V and 0.031V. The average values ​​of the negative and positive holding voltages were 0.108V and 0.1V, respectively, with standard deviations also as low as 0.03V and 0.039V. This indicates that the device has a high yield, low randomness, and good reliability.

[0045] Figure 6 For the 50 sets of electrical IV cycle tests of the initial memristor device before dual processing in Comparative Example 1, the results show that the cycle distribution curve of the initial device is scattered and not concentrated, and the maximum threshold voltage is as high as 6 V, which is about 5 V different from the threshold voltage of the device after both processing methods.

[0046] Figure 7 The statistical diagram of the distribution of 50 groups of high and low resistance states of the initial memristor device before dual processing in Comparative Example 1 shows that the device failed at the 35th cycle, while the threshold device after dual processing can stably reach 500 cycles, further illustrating the effectiveness of the dual processing method in Example 1 in improving device performance.

[0047] Figure 8 The figure shows the statistical distribution of the average forward threshold voltage for Comparative Example 1 (Device 1, without dual treatment), Comparative Example 2 (Device 2, only plasma treated without high-temperature annealing), and Example 1 (Device 3, hafnium oxide-based memristor). It is clear from the figure that the forward threshold voltage of the devices gradually decreases after Ar plasma treatment and N2 high-temperature annealing, indicating that the surface smoothing and densification after dual treatment can directly improve the threshold performance of the memristor, reduce the operating voltage, and enhance durability.

[0048] In summary, the device prepared according to the embodiments of the present invention has symmetrical switching characteristics under both positive and negative voltages, and can be used as a bidirectional voltage-controllable switch. Therefore, it is suitable for switching control in AC or bidirectional signal paths, such as replacing traditional mechanical relays or CMOS transmission gates in reconfigurable interconnects and analog switch arrays.

[0049] The above are merely preferred embodiments of the present invention, but the scope of protection of the present invention is not limited thereto. Any variations or substitutions that can be easily conceived by those skilled in the art within the scope of the technology disclosed in the present invention should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be determined by the scope of the claims.

Claims

1. The application of hafnium oxide-based memristors in the fabrication of electronic switches, characterized in that, The hafnium oxide-based memristor has bidirectional threshold characteristics, and its structure from bottom to top includes an inert bottom electrode, an intermediate layer, a buffer layer, and an active top electrode; the intermediate layer is a hafnium oxide thin film that has undergone plasma treatment and annealing, the buffer layer is a silver indium antimony tellurium thin film, and the active top electrode is a silver electrode. The memristor can transition from a high-resistivity state to a low-resistivity state at the threshold voltage under both positive and negative voltages, and spontaneously recovers to the high-resistivity state when it is swept back to the holding voltage.

2. The application of the hafnium oxide-based memristor according to claim 1 in the fabrication of electronic switches, characterized in that, The inert bottom electrode is platinum.

3. The application of the hafnium oxide-based memristor according to claim 1 in the fabrication of electronic switches, characterized in that, The thickness of the hafnium oxide film in the intermediate layer is 5nm-25nm.

4. The application of the hafnium oxide-based memristor according to claim 1 in the fabrication of electronic switches, characterized in that, The thickness of the silver indium antimony tellurium thin film in the buffer layer is 0nm-20nm, and is not 0nm.

5. The application of the hafnium oxide-based memristor according to claim 1 in the fabrication of electronic switches, characterized in that, The current limit of the hafnium oxide-based memristor is 100nA; the threshold voltage of the memristor is ≤1V.

6. The application of the hafnium oxide-based memristor according to claim 1 in the fabrication of electronic switches, characterized in that, The method for preparing the hafnium oxide-based memristor includes the following steps: (1) Provide an insulating substrate and fabricate an inert bottom electrode thereon; (2) A hafnium oxide thin film is grown on the inert bottom electrode using atomic layer deposition to form an intermediate layer; (3) The device with hafnium oxide thin film grown on it is subjected to plasma treatment and annealing treatment in sequence; (4) A silver indium antimony tellurium buffer layer is prepared on a hafnium oxide thin film that has undergone plasma treatment and annealing. (5) An active silver top electrode is prepared on the buffer layer.

7. The application of the hafnium oxide-based memristor according to claim 6 in the fabrication of electronic switches, characterized in that, In step (1), the magnetron sputtering method is used to prepare the material, with a sputtering power of 100W and a time of 10 minutes.

8. The application of the hafnium oxide-based memristor according to claim 6 in the fabrication of electronic switches, characterized in that, In step (2), the growth temperature of the atomic layer deposition method is 150°C and the growth time is 90 minutes.

9. The application of the hafnium oxide-based memristor according to claim 6 in the fabrication of electronic switches, characterized in that, In step (3), the plasma treatment conditions are: under an argon atmosphere, treatment at a power of 85W for 10 minutes; the annealing conditions are: under a nitrogen atmosphere, annealing at 300℃ for 90 minutes.

10. An electronic switch, characterized in that, The invention includes a hafnium oxide-based memristor, which has bidirectional threshold characteristics. Its structure, from bottom to top, includes an inert bottom electrode, an intermediate layer, a buffer layer, and an active top electrode. The intermediate layer is a hafnium oxide thin film that has undergone both plasma treatment and annealing. The buffer layer is a silver indium antimony tellurium thin film. The active top electrode is a silver electrode. The memristor can transition from a high-resistivity state to a low-resistivity state at the threshold voltage under both positive and negative voltages, and spontaneously recovers to the high-resistivity state when it is swept back to the holding voltage.

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