Substrate processing method, substrate processing monitoring method, storage medium, and substrate processing apparatus

Abstract

The present application provides a substrate processing method, a substrate processing monitoring method, a storage medium, and a substrate processing apparatus. A substrate processing method of one aspect includes: a step of performing a prescribed processing on a substrate, the prescribed processing including an operation of rotating the substrate held at a holding portion; and a step of repeatedly performing a monitoring processing during the execution of the prescribed processing. The monitoring processing includes: a first processing of detecting an outer edge within an image obtained by capturing a range including a surface of the substrate; a second processing of calculating a position of the outer edge within the image based on a result of the detection in the first processing; and a third processing of judging whether or not there is an abnormality in holding of the substrate by the holding portion based on a result of the calculation in the second processing.

Description

Technical Field

[0001] This invention relates to a substrate processing method, a substrate processing monitoring method, a storage medium, and a substrate processing apparatus. Background Technology

[0002] Japanese Patent Application Publication No. 2023-137511 discloses a substrate processing apparatus, which includes: a chamber; a substrate holding section for holding a substrate in the chamber; a camera for capturing images of a shooting area including a monitored object in the chamber to generate captured image data; and a control section for monitoring the state of the monitored object. Summary of the Invention

[0003] The technical problem that the invention aims to solve

[0004] The present invention provides a substrate processing method, a substrate processing monitoring method, a storage medium, and a substrate processing apparatus that can prevent failures during substrate processing.

[0005] Technical means for solving technical problems

[0006] A substrate processing method according to one aspect of the present invention includes: a step of performing a predetermined processing on a substrate, the predetermined processing including an operation of rotating the substrate held in a holding portion; and a step of repeatedly performing a monitoring process during the execution of the predetermined processing. The monitoring process includes: a first process, which detects the outer edge within an image obtained by capturing an image including the outer edge of the surface of the substrate; a second process, which calculates the position of the outer edge within the image based on the detection result of the first process; and a third process, which determines, based on the calculation result of the second process, whether there is any abnormality in the holding of the substrate by the holding portion.

[0007] Invention Effects

[0008] According to the present invention, a substrate processing method, a substrate processing monitoring method, a storage medium, and a substrate processing apparatus are provided that can prevent malfunctions during substrate processing. Attached Figure Description

[0009] Figure 1 This is a top view schematically illustrating an example of a substrate processing apparatus.

[0010] Figure 2 This is a front view schematically illustrating an example of a substrate processing apparatus.

[0011] Figure 3 This is a schematic diagram illustrating an example of a liquid treatment device.

[0012] Figure 4 This is a schematic diagram illustrating an example of an image obtained by a photographing device.

[0013] Figure 5 This is a block diagram illustrating an example of the functional structure of a control device.

[0014] Figure 6 (a) and (b) are graphs that schematically represent an example of the time-varying position of the outer edge.

[0015] Figure 7 This is a block diagram illustrating an example of the hardware structure of a control device.

[0016] Figure 8 This is a flowchart illustrating an example of the processing flow executed by the control device.

[0017] Figure 9 (a) is a schematic diagram showing an example of an image obtained by a photographing device. Figure 9 (b) is a graph schematically showing an example of the time-varying distance between the wafer and the cup.

[0018] Figure 10 This is a schematic diagram illustrating an example of an image obtained by a photographing device.

[0019] Figure 11 This is a schematic diagram illustrating an example of an image obtained by a photographing device.

[0020] Figure 12 (a) and (b) are schematic diagrams illustrating an example of an image obtained by a photographing device.

[0021] Explanation of reference numerals in the attached figures

[0022] 1…Wafer processing system, W…Wafer, WL…Laminated substrate, W1, W2…Unit substrate, Wa…Front side, Ew…Outer edge, U1…Liquid processing device, L1…Processing liquid, 52…Holding part, 70…Cup-shaped body, Ec…Inner edge, 90…Imaging device, 100…Control device, 120…Monitoring and processing execution unit, MI…Image, DR, DR1, DR2, DR3, DR4…Detection target area. Detailed Implementation

[0023] Hereinafter, the wafer processing system of the substrate processing apparatus of this embodiment will be described with reference to the accompanying drawings. Furthermore, in this specification, elements having substantially the same functional structure are labeled with the same reference numerals, and repeated descriptions are omitted.

[0024] <Chip Processing System>

[0025] First, the structure of the wafer processing system of this embodiment will be described. Figure 1 , Figure 2These are a top view and a front view, respectively, schematically showing the general structure of the wafer processing system 1. In this embodiment, the wafer processing system 1 is described as a photolithography system that performs resist film formation and development processes on a wafer W (substrate).

[0026] like Figure 1 As shown, the wafer processing system 1 includes a cassette station 2 and a processing station 3. The cassette station 2 is used to feed and discharge cassettes C containing multiple wafers W. The processing station 3 includes multiple processing devices that perform prescribed processing on the wafers W. Furthermore, the wafer processing system 1 has a structure that integrally connects the cassette station 2, the processing station 3, and the interface station 4. The interface station 4 facilitates the transfer of wafers W between adjacent exposure devices (not shown) on the opposite side of the processing station 3. Additionally, as... Figure 1 As shown, processing station 3 has two units between box station 2 and interface station 4, but it can also have one unit or more than three units.

[0027] The cassette station 2 is equipped with multiple cassette placement stages 21 and wafer transport devices 22 and 23. The cassette station 2 uses the wafer transport devices 22 or 23 to transport wafers W between the cassettes C placed on the placement stages 21 and the processing station 3. Therefore, the wafer transport devices 22 and 23 are each equipped with drive mechanisms that have movement paths in various directions, such as horizontal (X and Y directions), vertical (Z direction), and around the vertical axis (θ direction), as needed. They can also be equipped with drive mechanisms that have movement paths in all directions.

[0028] At least one of the wafer transport devices 22 and 23 is capable of transferring wafer W to the cartridge C, and also capable of transferring wafer W to the processing station 3. Furthermore, the transfer operation with the processing station 3 refers, for example, to the transfer of wafer W to a third block G3, wherein the third block G3 includes transfer devices accessible to the wafer transport device 33 within the processing station 3 (described later). The third block G3 may include multiple transfer devices (not shown) arranged vertically.

[0029] In addition, an inspection device (not shown) for inspecting the wafer W can be provided at a location accessible to either of the wafer transport devices 22 and 23.

[0030] Processing station 3 has multiple blocks, such as the first, second, and fourth blocks G1, G2, and G4. Additionally, as... Figure 2 As shown, multiple layers 31, including the first and second blocks G1 and G2, are stacked vertically. For example, on the front side of processing station 3 ( Figure 1 The first block G1 is set on the negative X-direction side, on the back side of processing station 3. Figure 1A second block G2 is located on the positive X-direction side of processing station 3. On the interface station 4 side of processing station 3 ( Figure 1 A fourth block G4 is provided on the connection portion (on the positive Y-direction side) or connecting to other adjacent processing stations 3. The fourth block G4 may include multiple connection devices arranged in the vertical direction. Alternatively, the aforementioned third block G3 may also be provided within the processing station 3.

[0031] The first block G1 is equipped with multiple processing devices, such as a patterning film forming apparatus and a developing apparatus (not shown). The patterning film forming apparatus may include, for example, an anti-reflective film forming apparatus in addition to a resist film forming apparatus. For example, the multiple processing devices are arranged horizontally. Furthermore, the number, arrangement, and type of these processing devices can be arbitrarily selected.

[0032] In these patterning film forming apparatuses and developing apparatuses, for example, processes such as supplying a specified processing solution or a specified gas to the wafer W are performed. Thus, in the patterning film forming apparatus, resist films and anti-reflective films are formed. The resist film is used as a mask when forming the pattern of the underlying film, and the anti-reflective film is used for efficient light irradiation processing, such as exposure processing. On the other hand, in the developing apparatus, a portion of the exposed resist film is removed to form the uneven shape of the aforementioned mask. In the first block G1, a liquid processing apparatus U1 can be configured as an example of a patterning film forming apparatus. The liquid processing apparatus U1 (processing unit) is a device that performs liquid processing on the wafer W using a film forming processing solution as a specified process.

[0033] For example, in the second block G2, heat treatment apparatus (not shown) for heating, cooling, and other heat treatments of the wafer W is arranged in both the vertical and horizontal directions. Additionally, in the second block G2, although not shown in either direction, in the vertical direction ( Figure 2 The heat treatment unit (in the Z direction) and the horizontal direction are equipped with a hydrophobic treatment unit for improving the adhesion of the photoresist solution to the wafer W, and a peripheral exposure unit for exposing the outer periphery of the wafer W. The number and configuration of these heat treatment units, hydrophobic treatment units, and peripheral exposure units can be arbitrarily selected.

[0034] like Figure 1 As shown, a wafer transport region 32 is formed in the area between the first block G1 and the second block G2 when viewed from above. A wafer transport device 33, for example, is disposed in the wafer transport region 32.

[0035] The wafer transport device 33 has, for example, a transport arm capable of moving in the Y direction, front-back direction, θ direction, and vertical direction. The wafer transport device 33 moves within the wafer transport area 32, capable of transporting the wafer W to designated devices within the surrounding first block G1, second block G2, third block G3, and fourth block G4. Figure 1 In the case of multiple processing stations 3, the wafer transport device 33 located in the processing station 3 on the side of the interface station 4 can transport the wafer W to the specified device in the first, second, and fourth blocks G1, G2, and G4, and can also transport it to the specified device in the fifth block G5, which will be described later.

[0036] The wafer delivery device 33, for example, Figure 2 As shown, multiple units are arranged vertically. One wafer transport device 33 can transport a wafer W to a specified device located at the height of the upper layer 31 among multiple stacked layers 31. For specified devices located at the height of the lower layers 31, the wafer W can be transported by other wafer transport devices 33. Multiple wafer transport areas 32 are set up in a manner that allows for the transport of such wafers W. Furthermore, the number of wafer transport devices 33 and the number of layers 31 corresponding to one wafer transport device 33 can be arbitrarily selected; for example, a wafer transport device 33 can be provided for each layer 31.

[0037] Additionally, a shuttle transport device (not shown) may be present in wafer transport area 32 or in the first block G1 and the second block G2. The shuttle transport device linearly transports the wafer W between the space adjacent to one side of the processing station 3 and other adjacent spaces on the opposite side.

[0038] Interface station 4 is equipped with a fifth block G5 including multiple transfer devices, and wafer transport devices 41 and 42. Between the fifth block G5, where wafer W is transferred using wafer transport device 33, and the exposure device, interface station 4 uses wafer transport device 41 or 42 to transport wafer W. Therefore, wafer transport devices 41 and 42 may each include, as needed, drive mechanisms with movement paths in various directions such as horizontal (X-direction, Y-direction), vertical (Z-direction), and about a vertical axis (θ-direction), or drive mechanisms with movement paths in all directions. Wafer W can be supported by at least one of wafer transport devices 41 and 42, and transported between the transfer devices and the exposure device within the fifth block G5.

[0039] Within the interface station 4, at a location accessible to either of the wafer transport devices 41 or 42, a cleaning device for cleaning the surface of the wafer W and the aforementioned peripheral exposure device can be installed.

[0040] The inspection device, as described above, can be installed at box station 2, but it can also be installed in any of the conveyor arms located within processing station 3 and interface station 4. Figure 1 or Figure 2 The positions that can be approached are 33, 41, and 42 in the text.

[0041] A control device 100 is provided in the above-described wafer processing system 1. The control device 100 is, for example, a computer, and has a program storage unit (not shown). The program storage unit stores a program for controlling the processing of the wafer W in the wafer processing system 1. Additionally, the program storage unit also stores a program for controlling the operation of the various processing devices, transport devices, and other drive systems described above to implement wafer processing in the wafer processing system 1. Furthermore, the program can be recorded in a computer-readable storage medium H and installed from that storage medium H onto the control device 100. The storage medium H can include ROM, RAM, or a hard disk, but its structure and type are not limited, and it can be temporary or non-temporary. Furthermore, the control device 100 can include parts for storing, reading, executing, and communicating related to the program for implementing wafer processing; these parts can be located either inside or outside the wafer processing system 1. The control device 100 can be one or more circuits, or it can be centrally located as a whole or partially separated.

[0042] <Operation of the chip processing system>

[0043] The chip processing system 1 is configured as described above. Next, an example of chip processing performed using the chip processing system 1 configured as described above will be described.

[0044] First, the cassette C containing multiple wafers W is sent to the cassette station 2 of the wafer processing system 1 and placed on the cassette placement stage 21. Then, the wafers W in the cassette C are sequentially removed using the wafer transport device 22 or 23 and transported to the transfer device of the third block G3.

[0045] The wafer W, transported to the handover device in the third block G3, is supported by the wafer transport device 33 and transported to the hydrophobication treatment device located in the second block G2 for hydrophobication treatment. Next, it is transported by the wafer transport device 33 to a resist film forming device (e.g., liquid treatment device U1), where a resist film is formed on the wafer W. Afterward, it is transported to a heat treatment device for pre-baking treatment, and then to the handover device in the fifth block G5. Additionally, in cases such as... Figure 1 , 2In the case of multiple processing stations 3, the wafer W is first placed in the transfer device of the fourth block G4 before being transported to the transfer device of the fifth block G5, and then transferred between multiple wafer transport devices 33. Alternatively, the wafer W can also be transported by the wafer transport device 33 to the peripheral exposure device as needed for exposure processing of the wafer's periphery.

[0046] The wafer W, which is transferred to the handover device in the fifth block G5, is transported to the exposure device by wafer transport devices 41 and 42, and exposed according to a specified pattern. Alternatively, the wafer W can be cleaned by a cleaning device before exposure.

[0047] After exposure, the wafer W is transported by wafer transport devices 41 and 42 to the handover device in the fifth block G5. Then, it is transported by wafer transport device 33 to the heat treatment device for post-exposure baking.

[0048] After exposure and baking, the wafer W is transported by the wafer transport device 33 to the developing device for developing. After developing, the wafer W is transported by the wafer transport device 33 to the heat treatment device for post-baking.

[0049] Afterwards, wafer W is transported by wafer transport device 33 to the handover device of the third block G3, and then by wafer transport device 22 or 23 of cassette station 2 to the cassette C of the designated cassette stage 21. In this way, a series of photolithography processes are completed.

[0050] Furthermore, the wafer processing system of the present invention is not limited to the structure and operation described above. For example, in the above embodiment, the wafer processing system is directly connected to the exposure apparatus, and the wafer W is transferred between the interface station 4 and the exposure apparatus. However, the wafer processing system may not be directly connected to the exposure apparatus. In this case, for example, after the wafer W is transported from the cassette station 2 to the processing station 3 for necessary processing, it is transported back to the cassette station 2 for delivery outside the system. In addition, parts that are not required in the apparatus exemplified as processing apparatus may not be provided in the wafer processing system, or the processing in that apparatus may not be performed. The wafer processing system may also be a system for processing a laminated substrate WL obtained by bonding two or more unit substrates together. The wafer processing system may have a liquid processing apparatus for liquid processing of the laminated substrate WL, and may also have a heat processing apparatus for heat processing of the laminated substrate WL.

[0051] (Specific examples of liquid treatment devices)

[0052] Next, refer to Figure 3 A specific example of the liquid processing apparatus U1 will be described. The liquid processing apparatus U1 supplies a film-forming processing liquid (hereinafter referred to as "processing liquid L1") to the wafer W, which is the object of processing, to form a coating of processing liquid L1. Figure 3 In this invention, the coating of the treatment liquid L1 is represented by "F". In addition, in this invention, the coating of the treatment liquid L1 formed by the liquid treatment device U1 performing liquid treatment, and the film of the treatment liquid L1 formed on the front side Wa during the liquid treatment process performed by the liquid treatment device U1 are collectively referred to as "coating F".

[0053] The liquid processing performed by the liquid processing apparatus U1 includes rotating the wafer W held in the holding portion. The liquid processing performed by the liquid processing apparatus U1 includes supplying a processing liquid L1 to the wafer W held in the holding portion. The liquid processing apparatus U1 rotates the wafer W for at least a portion of the liquid processing execution period. For example, the liquid processing apparatus U1 supplies the processing liquid L1 to the front side Wa of the wafer W while rotating the wafer W, and after supplying the processing liquid L1, rotates the wafer W to dry the coating F. Figure 3 As shown, the liquid treatment apparatus U1 includes, for example, a rotating holding part 50, a liquid supply part 60, and a cup-shaped body 70.

[0054] A rotating holding part 50 holds and rotates the wafer W. The rotating holding part 50 includes a holding part 52 and a rotating drive part 54. The holding part 52 holds (supports) the wafer W. For example, the holding part 52 supports the center of the back side Wb of the wafer W, which is arranged horizontally with its front side Wa facing upward, and holds the wafer W by vacuum adsorption or the like. The rotating drive part 54 is connected to the holding part 52 via a shaft.

[0055] The rotation drive unit 54 is, for example, an actuator including a power source such as an electric motor, that rotates the holding unit 52 about a vertical axis Ax. The rotation of the holding unit 52 by the rotation drive unit 54 causes the wafer W, which is held (supported) in the holding unit 52, to rotate. The holding unit 52 holds the wafer W in such a manner that the center CP of the wafer W is approximately aligned with the axis Ax.

[0056] The liquid processing apparatus U1 may have multiple (e.g., three) lifting pins 58. These lifting pins 58 function to transfer the wafer W between the holding section 52 and the wafer transport device 33. The lifting pins 58 are arranged around the holding section 52. They are connected to a lifting drive unit and configured to move up and down in the vertical direction. For example, when transferring the wafer W to the wafer transport device 33 after liquid processing, the lifting pins 58 rise, supporting the back side of the wafer W while moving it above the holding section 52.

[0057] The liquid supply unit 60 supplies processing liquid L1 to the front side Wa of the wafer W. The processing liquid L1 is, for example, a solution (resist) used to form a resist film. The liquid supply unit 60 includes a nozzle 62, a supply source 64, a supply pipe 65, an on / off valve 66, and a nozzle drive unit 68.

[0058] The nozzle 62 is configured to dispense processing liquid L1 onto the front surface Wa of the wafer W held in the holding portion 52. The nozzle 62 is positioned, for example, above the wafer W (in one example, vertically above the center CP of the wafer W), dispensing the processing liquid L1 vertically downwards. The supply source 64 is connected to the nozzle 62 via the supply pipe 65, supplying the processing liquid L1 to the nozzle 62.

[0059] An on / off valve 66 is provided in the supply pipe 65 to switch the opening and closing state of the flow path formed by the supply pipe 65. The nozzle drive unit 68 moves the nozzle 62 between a discharge position above the wafer W and a standby position different from this discharge position. The standby position is, for example, located outside the outer edge Ew of the wafer W. In addition to moving the nozzle 62 along the front surface Wa of the wafer W, the nozzle drive unit 68 can also move the nozzle 62 in the vertical direction.

[0060] The cup-shaped body 70 is arranged to surround the holding portion 52 and is a component that receives the processing liquid L1 supplied to the wafer W (front side Wa). The cup-shaped body 70 forms a receiving space with its upper end open. The holding portion 52 is located in this receiving space, and the processing liquid L1 is supplied to the front side Wa of the wafer W when the wafer W is placed in the receiving space. The cup-shaped body 70 is configured to collect the processing liquid L1 that splashes outward from the wafer W, which is rotating using the rotating holding portion 50.

[0061] A drain port 71 and an exhaust port 72 are provided at the bottom of the cup-shaped body 70. The drain port 71 is an opening for discharging the processing liquid L1 collected by the cup-shaped body 70 to the outside of the cup-shaped body 70. The exhaust port 72 is an opening for discharging the gas inside the cup-shaped body 70 to the outside of the cup-shaped body 70. For example, the gas generated along with the supply of processing liquid L1 to the wafer W is discharged from the exhaust port 72.

[0062] The cup-shaped body 70 includes a peripheral wall 75 and an inclined wall 76. The peripheral wall 75 is formed in a cylindrical shape, extending circumferentially about an axis Ax. The peripheral wall 75 is connected to the outer periphery of the bottom of the cup-shaped body 70 and extends in a direction parallel to the axis Ax. One end of the inclined wall 76 is connected to the upper end of the peripheral wall 75, and it is inclined from the point of connection with the upper end of the peripheral wall 75 towards the axis Ax. The inclined wall 76 is formed in an annular shape.

[0063] Viewed axially from axis Ax (e.g., from vertical above), the inner edge Ec of the cup-shaped body 70 is located further outward than the outer edge Ew of the wafer W held in the retaining portion 52. The inner edge Ec of the cup-shaped body 70 corresponds, for example, to the inner edge of the inclined wall 76, and the outer edge Ew (periphery) of the wafer W corresponds, for example, to the periphery of the coating F formed on the front side Wa of the wafer W.

[0064] (Filming device)

[0065] The wafer processing system 1 includes an imaging device 90. During the execution of a prescribed process (e.g., liquid processing) on ​​the wafer W, the imaging device 90 acquires image data representing the processing state. The imaging device 90 can acquire image data to record the processing state. The imaging device 90 is, for example, a camera that generates video data. The imaging device 90 is housed within the casing of the liquid processing device U1.

[0066] The imaging device 90 is capable of capturing a shooting range including at least a portion of the outer edge Ew of the chip W held in the holding portion 52. The imaging device 90 can be configured to capture the front surface Wa of the chip W held in the holding portion 52 from an obliquely upward angle. The field of view (shooting range) of the imaging device 90 can be set to include the entire front surface Wa of the chip W, or it can be set to include only the center CP and a portion of the outer edge Ew of the front surface Wa of the chip W. Figure 4 The image MI (1 frame in the video) obtained by the shooting device 90 is illustrated in the figure.

[0067] (Control device)

[0068] The control device 100 controls one or more devices included in the wafer processing system 1. The control device 100 can control the liquid processing device U1 to perform liquid processing on the wafer W, which is the object of processing. In addition to controlling devices such as the liquid processing device U1, the control device 100 (monitoring device) may also have the function of monitoring the processing status of the liquid processing device U1. Monitoring the processing status means monitoring whether any abnormalities have occurred during the processing of the monitored object (e.g., the liquid processing of the liquid processing device U1).

[0069] The monitoring of the object by the control device 100 can be a process (liquid processing) that is continuously performed from the time the wafer W, which is to be processed, is placed in the holding unit 52 until the wafer W is delivered from the holding unit 52. The monitoring of the object by the control device 100 may also include a process of raising and lowering the wafer W using multiple lifting pins 58, and a process of transferring the wafer W from the multiple lifting pins 58 to the wafer transport device 33 after the wafer W has been raised. The monitoring of the object may include, for example, a process of supplying processing liquid L1 to the front side Wa while rotating the wafer W using the rotating holding unit 50, and a process of rotating the wafer W using the rotating holding unit 50 after stopping the supply of processing liquid L1. Hereinafter, the content of the present invention will be described using the case where the monitoring of the object is liquid processing of the liquid processing device U1 as an example.

[0070] Control device 100 Figure 5As shown, the functional structure (hereinafter referred to as "functional module") includes a processing condition holding unit 112, a processing control unit 114, and a monitoring processing execution unit 120. The processing performed by these functional modules is equivalent to the processing performed by the control device 100.

[0071] The processing condition holding unit 112 holds (stores) information representing the liquid processing conditions of the liquid processing apparatus U1. The liquid processing conditions held by the processing condition holding unit 112 include, for example, the rotational speed of the wafer W, the discharge flow rate of the processing liquid L1, the discharge time of the processing liquid L1, and the rotational time of the wafer W after the discharge of the processing liquid L1 stops. These conditions can be preset by an operator or the like.

[0072] The processing control unit 114 controls the rotation holding unit 50 and the liquid supply unit 60 included in the liquid processing apparatus U1 according to the liquid processing conditions held by the processing condition holding unit 112. For example, the processing control unit 114 controls the rotation holding unit 50 to rotate the wafer W according to a set value of rotation speed specified in the liquid processing conditions. In addition, the set value of the rotation speed of the wafer W can be set to different values ​​according to each process (unit processing) included in the liquid processing.

[0073] During liquid processing by the liquid processing apparatus U1, the monitoring and processing execution unit 120 repeatedly performs the following monitoring and processing. The monitoring and processing includes a first process, a second process, and a third process. The first process involves detecting the outer edge Ew within an image MI obtained by capturing an image of the area including the outer edge Ew of the front surface Wa of the wafer W. The second process calculates the position of the outer edge Ew within the image MI based on the detection results from the first process. The third process determines whether there is any abnormality in the holding of the wafer W by the holding unit 52 based on the calculation results from the second process. The control device 100 can perform the above monitoring and processing according to a predetermined monitoring cycle (each monitoring cycle).

[0074] The monitoring and processing execution unit 120 includes, for example, an image information acquisition unit 122, an edge detection unit 124, an outer edge position calculation unit 126, a calculation result accumulation unit 128, an anomaly judgment unit 130, and an output unit 132 as functional modules. The processing performed by these functional modules is equivalent to the processing performed by the monitoring and processing execution unit 120 (control device 100).

[0075] The image information acquisition unit 122 acquires image data from the imaging device 90 for performing monitoring processing. For example, during the continuous liquid processing of the liquid processing device U1, the image information acquisition unit 122 continuously acquires video data generated by the imaging device 90.

[0076] The edge detection unit 124 performs the first process described above for each monitoring cycle. Within the image MI included in the video data acquired by the image information acquisition unit 122, the edge detection unit 124 detects the edge corresponding to the outer edge Ew of the wafer W. The image MI varies for each monitoring cycle; the image MI used in a particular monitoring cycle can be an image (still image) of a frame from the video data generated by the imaging device 90 for that monitoring cycle.

[0077] Edge detection unit 124 can, as Figure 4 The image MI is shown as a region extracted, and edges are detected within that region. Figure 4 In this context, the region that is part of the object to be edge detected is denoted by "DR", and this region will be referred to as "detection object region DR" below. There is no particular limitation on the specific algorithm used to detect the edge corresponding to the outer edge Ew of the wafer W. For example, the edge detection unit 124 can detect the edge using the Canny method.

[0078] When detecting an edge corresponding to the outer edge Ew of the wafer W, the edge detection unit 124 determines the coordinates of the pixel where the edge is located in the detection target area DR. As the coordinates of the pixels where the edge is located, the edge detection unit 124 determines the coordinates of multiple points (multiple pixels). The coordinates of each pixel are determined, for example, by the number of pixels in the horizontal and vertical directions of the image from a reference position. Figure 4 In the image, horizontal directions are represented by arrows with an "x" symbol, and vertical directions are represented by arrows with a "y" symbol.

[0079] The outer edge position calculation unit 126 performs the second processing described above in each monitoring cycle. Based on the edge detection results of the edge detection unit 124, the outer edge position calculation unit 126 calculates the position of the outer edge Ew of the wafer W within the image MI. Calculating the position of the outer edge Ew of the wafer W in the detection target region DR is equivalent to calculating the position of the outer edge Ew of the wafer W within the image MI.

[0080] During the edge detection phase where the edge detection unit 124 detects an edge, multiple points are detected as edges. Therefore, the outer edge position calculation unit 126 calculates the position of the outer edge Ew of the wafer W based on the coordinates of the multiple points detected by the edge detection unit 124. The outer edge position calculation unit 126 can calculate the average (arithmetic mean) of the coordinates of the multiple points detected as edges by the edge detection unit 124 as the position of the outer edge Ew of the wafer W. The outer edge position calculation unit 126 can calculate the arithmetic mean of the coordinates of all the multiple points detected as edges by the edge detection unit 124, or it can calculate the arithmetic mean of a subset of the coordinates (coordinates of multiple representative points) of all pixels detected as edges by the edge detection unit 124 as the position of the outer edge Ew of the wafer W.

[0081] The outer edge position calculation unit 126 calculates the position of the outer edge Ew of the wafer W, for example, in at least one of the horizontal and vertical directions on the image. The outer edge position calculation unit 126 may also calculate the position of the outer edge Ew of the wafer W separately for both the horizontal and vertical directions on the image. In this case, the outer edge position calculation unit 126 calculates the average of the horizontal coordinates of the plurality of points detected as edges, and calculates the average of the vertical coordinates of the plurality of points detected as edges. Alternatively, the outer edge position calculation unit 126 may calculate, in addition to the position of the outer edge Ew in at least one of the horizontal and vertical directions on the image, the Euclidean distance (the straight-line distance between the reference position and the coordinates) within the image as the position of the outer edge Ew of the wafer W.

[0082] The calculation result accumulation unit 128 accumulates the calculation results (calculation results in the second process) of the outer edge position calculation unit 126 in each monitoring cycle. By accumulating the calculation results in each monitoring cycle by the calculation result accumulation unit 128, waveform information of the calculation result representing the position of the outer edge Ew of the wafer W (hereinafter referred to as "outer edge position") as a function of time can be obtained.

[0083] The anomaly detection unit 130 performs the third process described above in each monitoring cycle. Based on the calculation results of the outer edge position by the outer edge position calculation unit 126 in each monitoring cycle, the anomaly detection unit 130 determines whether there is any anomaly in the holding of the wafer W by the holding unit 52 during the liquid processing. Furthermore, the monitoring cycle can be set to be shorter than the time it takes for the wafer W to rotate one revolution during the liquid processing by the liquid processing apparatus U1.

[0084] Here, also refer to Figure 6 (a) and Figure 6 (b) explains why anomalies in the process can be detected based on the calculation results of the outer edge position of the wafer W. Figure 6 (a) represents the time variation of the calculated position of the outer edge Ew of wafer W in the lateral (x-direction). Figure 6 (b) represents the time variation of the calculated position of the outer edge Ew of wafer W in the longitudinal (y-direction). The rotation angle of wafer W contained in image MI is different at each monitoring cycle. Figure 6 In Figure (a) and Figure 6(b), the horizontal axis of the curve represents the "frame number," indicating the number of frames in the video data, but in reality, it represents time. Focusing on the detection target area DR, different rotation angles of the wafer W mean that the portion (range) of the outer edge Ew of the wafer W contained in the detection target area DR is different.

[0085] If we assume that the outer edge Ew of the wafer W is a perfect circle, and that the center CP of the wafer W is perfectly aligned with the axis Ax representing the rotation center of the rotation holding section 50, then the outer edge position in the detection target area DR will not change even if the rotation angle of the wafer W is different. On the other hand, the wafer W is somewhat warped, and the center CP of the wafer W held in the holding section 52 is not strictly aligned with the axis Ax. Therefore, the outer edge position in the detection target area DR will change with each monitoring cycle.

[0086] Because the wafer W is rotating, such as Figure 6 (a) and Figure 6 As shown in (b), the outer edge position changes periodically within the detection area DR. If the degree of this periodic change in the outer edge position, caused by warping of the wafer W or offset (eccentricity) of the center CP relative to the axis Ax, is small, it will not be a major problem. However, if the degree of this periodic change in the outer edge position is large from the initial stage of processing, or if it increases during processing, then the holding of the wafer W may be abnormal. Continuing processing under such abnormal conditions may lead to the release of the holding of the wafer W, resulting in a malfunction. Specific examples of such malfunctions during processing include damage to the wafer W itself, and contamination of the device by the processing fluid that accompanies this damage, or even if no damage occurs but the holding is released.

[0087] Based on the above, it can be concluded that by monitoring the magnitude (amplitude) of the outer edge position of the wafer W or the time change of the outer edge position of the wafer W, anomalies in the holding of the wafer W by the holding unit 52 can be detected. Hereinafter, anomalies in the holding of the wafer W by the holding unit 52 will be simply referred to as "anomalies". Furthermore, anomaly detection includes not only detecting the state in which an anomaly has occurred, but also detecting the signs of an anomaly. The anomaly determination unit 130 determines whether an anomaly exists by judging whether the calculation result of the outer edge position in the second processing of each monitoring cycle meets a certain condition, or by judging whether the cumulative result of the calculation result of the outer edge position up to that cycle meets a certain condition.

[0088] The anomaly detection unit 130 determines whether an anomaly exists, for example, based on a comparison between the outer edge position calculated in the second processing and a predetermined threshold. Specifically, the anomaly detection unit 130 determines an anomaly if, for example, the calculated value of the outer edge position in the second processing of each monitoring cycle exceeds a first threshold or falls below a second threshold smaller than the first threshold. The first and second thresholds can be determined through prior experiments, etc. By detecting anomalies using the anomaly detection unit 130, it is possible to prevent defects such as breakage of the wafer W.

[0089] In the second processing, when the outer edge positions are calculated horizontally and vertically on the image respectively, the anomaly detection unit 130 can determine whether there is an anomaly based on the calculation results of the corresponding outer edge positions in both the horizontal and vertical directions. The anomaly detection unit 130 can determine that an anomaly has occurred when at least one of the horizontal and vertical directions meets the conditions for determining an anomaly.

[0090] exist Figure 6 In (a), the horizontal outer edge position (calculated value) is represented by "p(x)", the first threshold is represented by "Th1(x)", and the second threshold is represented by "Th2(x)". Furthermore, the time corresponding to the current monitoring period is represented by "t1". The anomaly judgment unit 130 can determine that an anomaly has occurred when the outer edge position p(x) at time t1 is greater than the first threshold Th1(x) or less than the second threshold Th2(x). The anomaly judgment unit 130 can determine that no anomaly has occurred when the outer edge position p(x) at time t1 is below the first threshold Th1(x) and above the second threshold Th2(x).

[0091] exist Figure 6 In (b), the calculated value of the outer edge position in the longitudinal direction is represented by "p(y)", the first threshold is represented by "Th1(y)", and the second threshold is represented by "Th2(y)". The anomaly judgment unit 130 can determine that an anomaly has occurred when the outer edge position p(y) at time t1 is greater than the first threshold Th1(y) or less than the second threshold Th2(y). The anomaly judgment unit 130 can determine that no anomaly has occurred when the outer edge position p(y) at time t1 is below the first threshold Th1(y) and above the second threshold Th2(y).

[0092] The first threshold Th1(x) and the first threshold Th1(y) can be set to the same value or different values. The second threshold Th2(x) and the second threshold Th2(y) can also be set to the same value or different values. The anomaly determination unit 130 determines that an anomaly has occurred, which is equivalent to the anomaly determination unit 130 detecting an anomaly.

[0093] When the anomaly determination unit 130 determines that an anomaly has occurred, the output unit 132 outputs a signal indicating that an anomaly has been detected (hereinafter referred to as an "anomaly signal"). The output unit 132 outputs the anomaly signal during the continuous liquid processing period when the anomaly determination unit 130 determines that an anomaly has occurred. The output unit 132 can output the anomaly signal to the processing control unit 114.

[0094] When the processing control unit 114 receives an abnormal signal, it can control the rotating holding unit 50 to reduce the rotation speed of the wafer W held in the holding unit 52 during the liquid processing of the monitored object. Alternatively, when the processing control unit 114 receives an abnormal signal, it can control the rotating holding unit 50 to stop the wafer W held in the holding unit 52 from rotating. In addition to outputting an abnormal signal to the processing control unit 114, the output unit 132 can also output an abnormal signal to an output device connected to the control device 100 to notify the operator or the like that an abnormality has been detected.

[0095] Figure 7 This is a block diagram illustrating the hardware structure of the control device 100. For example... Figure 7 As shown, the control device 100 has a circuit 151. The circuit 151 has a processor 152, a memory 153, a storage device 154, a timer 155, and an input / output port 156.

[0096] The memory 154 is composed of one or more non-volatile storage devices such as flash memory or hard disk. The memory 154 stores a program for causing the wafer processing system 1 (device) to execute the substrate processing method described later. The memory 154 may also store a program for causing the wafer processing system 1 (device) to execute the monitoring process described later. The main memory 153 is composed of one or more volatile storage devices such as random access memory. The main memory 153 temporarily stores programs loaded from the memory 154.

[0097] The processor 152 consists of one or more computing devices, such as a CPU (Central Processing Unit) or a GPU (Graphics Processing Unit). The processor 152 executes programs loaded into memory 153. The results of the processor 152's operations are temporarily stored in memory 153. The timer 155 measures elapsed time by counting clock pulses. The input / output port 156, in response to requests from the processor 152, performs electrical signal input / output with the rotary holding unit 50, the liquid supply unit 60, and the imaging device 90, etc.

[0098] <Substrate Processing Methods>

[0099] Next, the substrate processing method executed in the wafer processing system 1 will be described. This substrate processing method includes a processing step and a monitoring step (a monitoring method for substrate processing). The processing step is a step of performing liquid treatment on the wafer W, which includes rotating the wafer W held in the holding section 52. The monitoring step is a step of repeatedly performing the aforementioned monitoring process during the execution of the processing step.

[0100] Figure 8This illustrates an example of the processing flow executed by the control device 100. During the execution of the processing flow, the imaging device 90 continuously captures images. When liquid processing in the liquid processing device U1 has begun, the control device 100 first executes step S11. In step S11, for example, the monitoring processing execution unit 120 stands by until a preset monitoring start time is reached. The monitoring start time can be set to coincide with the start time of the process in liquid processing where the supply of processing liquid L1 is stopped and rotation for drying the coating F is performed.

[0101] Next, the control device 100 executes step S12. In step S12, for example, the monitoring processing execution unit 120 stands by until the monitoring cycle, which represents the execution cycle of the monitoring processing, is reached. The monitoring cycle can be set to execute monitoring processing every time one still image is obtained, or it can be set to execute monitoring processing every multiple still images are obtained.

[0102] Next, the control device 100 executes steps S13 and S14. In step S13, for example, the edge detection unit 124 extracts the detection target region DR from the image MI. The range of the detection target region DR can be preset by the operator or the like. In step S14, for example, the edge detection unit 124 detects the edge corresponding to the outer edge Ew in the detection target region DR. In one example, the edge detection unit 124 detects the edge using the Canny method.

[0103] Next, the control device 100 executes step S15. In step S15, for example, the outer edge position calculation unit 126 calculates the position (outer edge position) of the outer edge Ew in the detection target area DR based on the coordinates of the multiple points detected as edges in step S14. Each pixel detected as an edge has horizontal and vertical coordinates. In one example, the outer edge position calculation unit 126 calculates the horizontal outer edge position by taking the average of the horizontal coordinates of the multiple points detected as edges. Furthermore, the outer edge position calculation unit 126 calculates the vertical outer edge position by taking the average of the vertical coordinates of the multiple points detected as edges.

[0104] Next, the control device 100 executes step S16. In step S16, for example, the anomaly determination unit 130 determines whether the outer edge position calculated in step S15 is within the normal range. Whether it is within the normal range can be determined, for example, by comparing the outer edge position with the first threshold and the second threshold. In one example, if the outer edge position calculated by the anomaly determination unit 130 in step S15 deviates from the normal range in at least one of the horizontal and vertical directions on the image, an anomaly is determined to have occurred. If the outer edge position calculated by the anomaly determination unit 130 in step S15 is within the normal range in both the horizontal and vertical directions on the image, no anomaly is determined to have occurred.

[0105] In step S16, if it is determined that the outer edge position calculated in step S15 deviates from the normal range (step S16: No), the processing performed by the control device 100 proceeds to step S21. In step S21, for example, the output unit 132 outputs the aforementioned abnormal signal to the processing control unit 114, and the processing control unit 114 controls the rotation holding unit 50 to stop the wafer W from rotating. As a result, the liquid processing of the monitored object is interrupted.

[0106] After executing step S21, the control device 100 executes step S22. In step S22, for example, the output unit 132 notifies the control device 100 of an abnormality by outputting an abnormality signal to an output device connected to the control device 100.

[0107] On the other hand, in step S16, when it is determined that the outer edge position calculated in step S15 is within the normal range (step S16: Yes), the processing performed by the control device 100 proceeds to step S17. In step S17, for example, the monitoring processing execution unit 120 determines whether it is a preset monitoring end time. The monitoring end time can be set to coincide with the end time of the process of stopping the supply of processing liquid L1 and performing rotation for drying the coating F.

[0108] In step S17, if it is determined that the monitoring is not at its end (step S17: No), the processing performed by the control device 100 returns to step S12, and the control device 100 again performs a series of processes including steps S12 to S16. On the other hand, in step S17, if it is determined that the monitoring is at its end (step S17: Yes), the processing flow ends.

[0109] In the above processing flow, a series of processes, including steps S12 to S15, are repeatedly executed until the monitoring end time is reached. During the repeated execution of this series of processes, the processing is interrupted when the calculated value of the outer edge position deviates from the normal range. This prevents the liquid processing (e.g., rotation for drying the coating F) from continuing under conditions where the holding unit 52 may malfunction. The control device 100 can also execute the above processing flow for subsequent wafers W. That is, the control device 100 can execute the above processing flow each time liquid processing is performed on multiple wafers W by the liquid processing device U1.

[0110] <Variation Example>

[0111] Figure 8The illustrated processing flow is an example and can be modified as appropriate. In the above processing flow, the control device 100 can execute one step and the next step in parallel, or it can execute the steps in a different order than in the example above. The control device 100 can replace any step, or perform processing different from the content of the example above, in addition to the processing flow described above. In addition to the above processing flow, the control device 100 can also monitor or record the processing status in liquid processing using the image MI itself, which is not only focused on the detection target area DR.

[0112] When determining whether an anomaly has occurred in step S16, the outer edge position calculated in the current monitoring cycle can be considered not only, but also the outer edge position calculated in a monitoring cycle earlier than the current time. For example, the anomaly determination unit 130 can determine whether the average value of the calculated outer edge position in multiple monitoring cycles, including the current monitoring cycle, is within the normal range.

[0113] The anomaly judgment unit 130 can determine that an anomaly has occurred if the calculated value of the outer edge position in each of the multiple monitoring cycles (e.g., two or more consecutive monitoring cycles), including the current monitoring cycle, is not within the normal range.

[0114] The method for determining whether an anomaly has occurred is not limited to comparing the calculated value of the outer edge position with a threshold. The anomaly determination unit 130 can determine whether an anomaly exists based on the waveform information (time variation of the outer edge position) accumulated in the calculation result accumulation unit 128. As described above, the outer edge position on the image changes periodically with the rotation of the wafer W. Therefore, as long as no anomaly occurs, the periodic change of the outer edge position on the image is considered to depend on the rotation speed of the wafer W.

[0115] In one example, the anomaly detection unit 130, in the third process, calculates the frequency in the waveform information representing the time change of the outer edge position obtained up to the execution time of the third process. For example... Figure 6 As shown in (a), the anomaly detection unit 130 can calculate the interval T between adjacent peaks in the waveform information and obtain the frequency based on the interval T. Alternatively, the anomaly detection unit 130 can transform the waveform information into a spectrum through Fourier transform or the like, and then calculate the frequency of the largest component in the spectrum.

[0116] After frequency calculation, the anomaly detection unit 130 can determine whether there is an anomaly based on a comparison between the frequency calculated from the waveform information and a reference frequency corresponding to the set value of the rotation speed of the wafer W during liquid processing. When the rotation speed of the wafer W is set to "N (rpm)," the reference frequency can be obtained by dividing N by 60. The anomaly detection unit 130 can determine that an anomaly has occurred when the frequency calculated from the waveform information deviates from the range obtained by adding a predetermined allowable error to the reference frequency.

[0117] The process of determining anomalies based on a comparison between the frequency calculated from the waveform information and a reference frequency also includes a process of determining anomalies based on a comparison between the period calculated from the waveform information and a reference period corresponding to the set value of the rotational speed. In this case, where the frequency calculated from the waveform information is used to determine whether an anomaly exists, since the waveform information includes the outer edge position calculated in the second process, the determination of whether an anomaly exists is based on the calculation results of the second process.

[0118] The anomaly determination unit 130 can determine whether an anomaly exists based on waveform information accumulated in the calculation result accumulation unit 128 and a determination model pre-built using machine learning. This determination model, built using machine learning, can output a determination result indicating whether an anomaly exists in response to input information representing the temporal change in the position of the outer edge Ew. It can be assumed that, under the same processing conditions, even if individual wafers W differ, the periodic changes in the outer edge position on the image will exhibit the same trend as long as no anomaly occurs. For example, the determination model is constructed to capture situations where the waveform information of the evaluated object exhibits a trend different from the periodic changes in the outer edge position under normal conditions (classified as an anomaly).

[0119] The monitoring and processing execution unit 120 may include a model building unit as a functional module for constructing a judgment model. In one example, the model building unit constructs a judgment model based on normal data accumulated from waveform information obtained during normal periods without anomalies, by performing machine learning using an autoencoder. An autoencoder is a type of neural network, and the intermediate layers of the judgment model are constructed to output information with the same value as the input information in response to the input information.

[0120] If the waveform information of an evaluation object, for which the presence or absence of an anomaly is unknown, tends to resemble the normal data provided during learning, then the output from the judgment model will approximate the waveform information of that evaluation object. When the waveform information of the evaluation object is input into the autoencoder-based judgment model, output information with a small error compared to the input information is obtained when no anomaly occurs. Conversely, output information with a large error compared to the input information is obtained when an anomaly occurs. The anomaly judgment unit 130 can use the judgment model constructed through machine learning using an autoencoder to determine the presence or absence of an anomaly based on the magnitude of the difference between the input and output information.

[0121] Depending on the monitoring period (the moment when monitoring is performed), the range of waveform information obtained up to that period on the time axis varies. Therefore, the model building unit described above can construct multiple judgment models corresponding to the moment when monitoring is performed. Furthermore, the model building unit does not necessarily need to construct different judgment models for each monitoring period; it can also construct judgment models for each certain range of the time axis. When using such a judgment model to determine whether an anomaly exists, since the waveform information of the evaluation object input into the judgment model includes the outer edge position calculated in the second processing, the determination of whether an anomaly exists is based on the calculation results in the second processing.

[0122] In the above monitoring process, in addition to the position of the outer edge Ew of the wafer W (outer edge position), the position of the inner edge Ec of the cup-shaped body 70 can also be used to determine whether there is an abnormality. For example... Figure 9 As shown in (a), the edge detection unit 124 can detect the edge corresponding to the inner edge Ec in addition to the edge corresponding to the outer edge Ew in the first process. The outer edge position calculation unit 126 can calculate the position of the inner edge Ec of the cup-shaped body 70 in addition to the outer edge position in the second process. The outer edge position calculation unit 126 can calculate the position of the inner edge Ec of the cup-shaped body 70 in the second process using the same calculation method as for calculating the outer edge position.

[0123] The anomaly detection unit 130 can determine whether there is an anomaly based on the distance d between the outer edge position and the inner edge Ec position calculated in the second process. Figure 9 (b) schematically illustrates a graph representing the time variation of distance d. The anomaly detection unit 130 can determine that an anomaly has occurred when the distance d is greater than a first threshold Th1(d) or less than a second threshold Th2(d). Instead of comparing distance d with the threshold, the anomaly detection unit 130 can determine the presence or absence of an anomaly based on a comparison of the frequency obtained from the waveform information representing the time variation of distance d with the aforementioned reference frequency. The anomaly detection unit 130 can determine the presence or absence of an anomaly based on the waveform information representing the time variation of distance d (the waveform information at the time of evaluation) and a judgment model pre-built through machine learning. In the case where distance d is used to determine the presence or absence of an anomaly, since the distance d is obtained using the outer edge position calculated in the second process, the determination of whether or not an anomaly exists is based on the calculation result in the second process.

[0124] When an abnormal signal is output from the output unit 132, the processing control unit 114 can control the rotation holding unit 50 to reduce the rotation speed of the wafer W instead of stopping the rotation of the wafer W. While reducing the rotation speed of the wafer W, the processing control unit 114 can continue processing using the liquid processing apparatus U1 even with the reduced rotation speed.

[0125] The monitoring of the object by the control device 100 (monitoring and processing execution unit 120) is not limited to the liquid processing of the liquid processing apparatus U1. The monitoring of the object can be any processing that accompanies the rotation of the wafer W. For example, the monitoring of the object can also be performed by a developing apparatus. The monitoring and processing execution unit 120 may not be included in the control device 100. In this case, the monitoring and processing execution unit 120 may be included in a monitoring device composed of a computer different from the control device 100. This monitoring device can be communicatively connected to the control device 100.

[0126] When comparing the size of two values ​​within a computer, either "above" or "greater than" can be used, or either "below" or "less than" can be used. This choice of benchmark does not change the technical significance of the process of comparing the size of the two values.

[0127] Here, also refer to Figure 10 , Figure 11 , Figure 12 (a) and Figure 12 Example (b) illustrates a monitoring process performed by the control device 100 during the processing of a laminated substrate WL obtained by bonding two or more unit substrates together. Figure 10 For example, a laminated substrate WL (substrate) is formed by bonding unit substrate W1 and unit substrate W2 together. Figure 10 The image MI obtained by the imaging device 90 during the processing (prescribed processing) of the laminated substrate WL is illustrated schematically.

[0128] The outer diameters of unit substrate W1 and unit substrate W2 can be identical. Unit substrate W1 and unit substrate W2 can be centered on each other and bonded together with their main surfaces facing each other on one side. Both identical outer diameters and identical centers include not only cases of perfect consistency but also cases where substantial consistency is possible, allowing for tolerances such as manufacturing errors. Unit substrate W1 and unit substrate W2 can be bonded without adhesives via fusion bonding or anodic bonding, or they can be bonded with adhesives.

[0129] It can utilize the characteristics of Figure 3 The liquid treatment apparatus U1, with the same structure as the example shown, performs liquid treatment on a laminated substrate WL. The liquid treatment performed on the laminated substrate WL may include filling the gap between unit substrates W1 and W2 at the periphery of the laminated substrate WL with a treatment liquid. The rotation holding part 50 of the liquid treatment apparatus U1 can hold the laminated substrate WL with unit substrate W1 positioned above unit substrate W2 and rotate the laminated substrate WL. Figure 10In this context, "Wa" represents the front side of the unit substrate W1, which can also be referred to as the front side of the laminated substrate WL. "Ew" represents the outer edge of the front side Wa of the laminated substrate (the front side Wa of the unit substrate W1).

[0130] The imaging device 90 can be configured to capture the front view Wa of the laminated substrate WL held in the holding portion 52 from an obliquely upward position. When viewed from above, the imaging device 90 can be positioned without overlapping the laminated substrate WL held in the holding portion 52. When viewed from above, the extending direction of the line segment connecting the center of rotation of the imaging device 90 and the holding portion 52 is defined as the "depth direction." Furthermore, in the depth direction, the direction (or orientation) closer to the imaging device 90 is referred to as "near" or "proximal," and the direction (or orientation) farther from the imaging device 90 is referred to as "far" or "distant." Figure 10 For example, the field of view (shooting range) of the shooting device 90 can be set to include at least a portion of the outer edge Ew located near the center CP of the laminated substrate WL held in the holding part 52 and at least a portion of the outer edge Ew located far from the center CP.

[0131] exist Figure 10 In this context, "rL" represents a line extending laterally (the x-axis direction in the image) within the image MI, containing the center CP of the stacked substrate WL, and is referred to as the "reference line rL". The detection object region DR, representing a region that is part of the object being detected as an edge, can be set above the reference line rL within the image MI. Above the reference line rL within the image MI corresponds to a location further away in the depth direction than the center CP of the stacked substrate WL held in the holding part 52. Alternatively, within the image MI, only the outer edge of the upper unit substrate W1 can be observed above the reference line rL, while the outer edges (outer peripheral surfaces) of both unit substrate W1 and unit substrate W2 can be observed below the reference line rL.

[0132] Two or more detection target regions DR can be set. In the first processing, the edge detection unit 124 detects edges in each of the two or more detection target regions DR. For example, as two or more detection target regions DR, detection target region DR1 and detection target region DR2 are set above the baseline rL in the image MI. In the horizontal direction on the image, a certain point of detection target region DR1 overlaps with the position of the center CP, while the detection target region DR2 as a whole does not overlap with the position of the center CP.

[0133] In the second process, the outer edge position calculation unit 126 can calculate the position of the outer edge Ew in the vertical (y-axis direction) of the image based on the edges detected in the detection target region DR1. In the second process, the outer edge position calculation unit 126 can calculate the position of the outer edge Ew in the horizontal (x-axis direction) of the image based on the edges detected in the detection target region DR2. Compared to the detection target region DR2, changes in the vertical position of the outer edge Ew are more easily observed in the detection target region DR1. Compared to the detection target region DR1, changes in the horizontal position of the outer edge Ew are more easily observed in the detection target region DR2.

[0134] and Figure 10 The examples shown are different, and can also be as follows: Figure 11 As shown, the two detection object regions DR are set above and below the baseline rL within the image MI, respectively. Detection object region DR1 is set above the baseline rL within the image MI, and detection object region DR3 is set below the baseline rL within the image MI. Detection object region DR3 can be set to include the bottommost unit substrate in the stacked substrate WL ( Figure 11 In the example, the outer edge of the unit substrate W2 is used, but the outer edges of other unit substrates are not included. Therefore, even if the number of unit substrates contained in the stacked substrate WL changes, edge detection can be performed without changing the position of the detection target area DR3. Focusing on the monitoring process utilizing the detection target area DR3, in the first process, the front face Wa of the stacked substrate WL (the front face Wa of the unit substrate W1) can be ignored, and instead, the outer edge of the back face (lower surface) of the unit substrate W2 can be detected as an edge.

[0135] The monitoring process, including the first, second, and third processes, can also be performed while the laminated substrate WL is not rotating. For example, the monitoring process can be performed by the control device 100 during at least one of the periods when the laminated substrate WL is moved upward using multiple lifting pins 58 and after the laminated substrate WL has been moved upward. After the laminated substrate WL has been moved upward, the control device 100 can perform the monitoring process repeatedly or only once.

[0136] exist Figure 12 (a) and Figure 12 In (b), an image MI is schematically illustrated during monitoring after the laminated substrate WL is moved to the top using multiple lifting pins 58. Figure 12 The image MI shown in (a) is an image obtained by capturing the state of the laminated substrate WL before it is moved (in the state of being held in the holding part 52). Figure 12The image MI illustrated in (b) is an image of the stacked substrate WL supported by the multiple lifting pins 58 after it has been raised.

[0137] The edge detection unit 124 can detect edges in a detection target region DR4, which is an example of a detection target region DR. The detection target region DR4 can be set to include a portion of the outer edge of the laminated substrate WL in its raised state using multiple lifting pins 58. The detection target region DR4 may or may not include a portion of the outer edge of the laminated substrate WL before it was raised. In the second process, the outer edge position calculation unit 126 can calculate at least the position of the outer edge Ew in the longitudinal direction (y-axis direction) of the image based on the edges detected in the detection target region DR4.

[0138] In the third processing step, the anomaly detection unit 130 can determine whether there is an anomaly in the rise of the laminated substrate WL based on a comparison between the calculated value of the position of the outer edge Ew in the vertical direction of the image and a normal range obtained by adding an allowable error to a predetermined normal position. The predetermined normal position and allowable error (i.e., the aforementioned normal range) can be determined through prior experiments. The anomaly detection unit 130 can determine an anomaly when the calculated value of the position of the outer edge Ew deviates from the normal range, and determine a normal (non-abnormal) position when the calculated value of the position of the outer edge Ew is included within the normal range.

[0139] In one of the examples described above, at least a portion of the content described in the other examples can be combined. For example, multiple anomaly detection methods can be combined (comparison of outer edge position with threshold, comparison of frequency, use of judgment model, and use of distance from cup-shaped body).

[0140] <Summary of the Invention>

[0141] The present invention includes the following configurations [1] to

[22] and the configurations of notes 1 to 3. The configurations of each of notes 1 to 3 may also be combined with the configurations described in any of [1] to

[22] .

[0142] [1] A substrate processing method includes: a step of performing a predetermined processing on a substrate (W, WL), the predetermined processing including an operation of rotating the substrate (W, WL) held in a holding part (52); and a step of repeatedly performing a monitoring process during the execution of the predetermined processing, the monitoring process including: a first processing, which detects the outer edge (Ew) in an image (MI) obtained by capturing an image of the area including the outer edge (Ew) of the surface (Wa) of the substrate (W, WL); a second processing, which calculates the position of the outer edge (Ew) in the image (MI) based on the detection result in the first processing; and a third processing, which determines whether there is any abnormality in the holding of the substrate (W, WL) by the holding part (52) based on the calculation result in the second processing.

[0143] As described above, if the positions of the inner and outer edges (Ew) of the image (MI) change significantly over time, it can be determined that an abnormality has occurred in the holding of the substrate (W, WL) by the holding unit (52). In the above substrate processing method, the determination of whether there is an abnormality based on the position of the outer edge (Ew) is performed repeatedly during the processing, so when an abnormality occurs in the holding of the substrate (W, WL), it can be detected during processing. Thus, it is possible to avoid continuing processing in a state where an abnormality may occur that could damage the substrate (W, WL). Therefore, it is possible to prevent malfunctions (e.g., damage to the substrate (W, WL)) from occurring during substrate processing.

[0144] [2] According to the substrate processing method described in [1] above, the substrate (WL) that is the processing object in the above-specified processing is a stacked substrate (WL) obtained by bonding two or more unit substrates (W1, W2) together.

[0145] A laminated substrate (WL) is heavier than a substrate composed of a single unit substrate. Therefore, even a small deviation between the rotation center during processing and the center (CP) of the laminated substrate (WL) can lead to holding abnormalities. Therefore, it is more beneficial to perform the aforementioned monitoring process during the prescribed processing of the laminated substrate (WL).

[0146] [3] According to the substrate processing method described in [2] above, the image (MI) is obtained by taking pictures by an imaging device (90) arranged obliquely above the laminated substrate (WL). In the first processing, based on the extraction of a portion of the image (MI) (DR, DR1, DR2), the outer edge (Ew) is detected in the portion of the image (MI). The portion of the image (MI) (DR, DR1, DR2) is set above the horizontal reference line (rL) including the center (CP) of the laminated substrate (WL).

[0147] The outer edge (Ew) observed above the reference line (rL) in the image (MI) is the boundary between the surface (front) (Wa) of the laminated substrate (WL) and the area outside the laminated substrate (WL). On the other hand, the outer edge (Ew) observed below the reference line (rL) in the image (MI) is the boundary between the surface (Wa) and the end face (peripheral face) of the laminated substrate (WL). Therefore, the contrast of the outer edge portion in the image is greater above the reference line (rL) than below. As a result, the position of the outer edge (Ew) in the laminated substrate (WL) can be calculated with high accuracy.

[0148] [4] The substrate processing method described in any one of [1] to [3] above further includes the following steps: if the above-mentioned abnormality is detected in the above-mentioned monitoring process, during the execution of the above-mentioned prescribed processing, the rotation speed of the substrate (W, WL) held in the holding part (52) is reduced, or the substrate (W, WL) held in the holding part (52) is stopped from rotating.

[0149] In this situation, it is possible to more reliably avoid continuing processing when an abnormal state has occurred.

[0150] [5] According to the substrate processing method described in [1] or [2] above, in the first processing, a portion region (DR) of the image (MI) is extracted, and the outer edge (Ew) is detected in the portion region (DR).

[0151] It is foreseeable that in addition to surveillance processing, there may also be situations where image acquisition (MI) is required, but the image range required for other purposes is sometimes different from that required for surveillance processing. In the method described above, surveillance processing is performed using a portion of the region (DR), thus accommodating both surveillance processing and image acquisition for other purposes.

[0152] [6] According to any of the substrate processing methods described in [1] to [5] above, in the third processing, the presence or absence of the above-mentioned abnormality is determined based on the comparison result between the position of the outer edge (Ew) calculated in the second processing and the specified threshold (Th1, Th2).

[0153] If the position of the outer edge (Ew) changes significantly, it can be expected that an abnormality has occurred in the retention of the substrate (W, WL). In the above method, the abnormality in the retention of the substrate (W, WL) can be detected by simply comparing the position of the outer edge with a threshold.

[0154] [7] According to any one of [1] to [6] above, the third processing includes: processing of calculating the frequency in the waveform information representing the time change of the position of the outer edge (Ew) obtained up to the execution time of the third processing; and processing of determining whether there is the above-mentioned abnormality based on the comparison result between the frequency calculated according to the above-mentioned waveform information and the reference frequency corresponding to the set value of the rotation speed of the substrate (W, WL) when the above-mentioned specified processing is performed.

[0155] In this case, anomalies that cannot be determined solely by the magnitude of changes in the outer edge position can be detected.

[0156] [8] According to any one of the substrate processing methods described in [1] to [7] above, in the third processing, the presence or absence of the above-mentioned abnormality is determined based on the judgment model and the waveform information representing the temporal change of the position of the outer edge (Ew) obtained up to the execution time of the third processing, wherein the judgment model is pre-constructed by machine learning and can output the judgment result of whether or not the above-mentioned abnormality exists in response to the input of the information representing the temporal change of the position of the outer edge (Ew).

[0157] In this case, anomalies that cannot be determined solely by the magnitude of changes in the outer edge position can be detected.

[0158] [9] According to any one of the above-described substrate processing methods [1] to [8], wherein the above-described processing is liquid processing, which includes processing of a processing liquid (L1) supplied to a substrate (W, WL) held in a holding part (52), the holding part (52) is surrounded by a cup-shaped body (70) used to receive the processing liquid (L1) supplied to the substrate (W, WL), in the second processing, in addition to the position of the outer edge (Ew), the position of the inner edge (Ec) of the cup-shaped body (70) is calculated, and in the third processing, the presence or absence of the above-described abnormality is determined based on the distance (d) between the position of the outer edge (Ew) and the position of the inner edge (Ec) calculated in the second processing.

[0159] In this case, anomalies that cannot be determined solely by the magnitude of changes in the outer edge position can be detected.

[0160]

[10] According to any one of the above [1] to [9], in the second processing, the position of the outer edge (Ew) is calculated by taking the average value of the coordinates of multiple points detected as the outer edge (Ew) in the first processing.

[0161] In the image (MI), the boundaries between the substrate (W, WL) and other regions may not be clear, and the detection results of the outer edge (Ew) in the first processing may contain noise. Even in the case of noise, averaging can reduce the influence of the calculated value of the outer edge position. Therefore, high-precision anomaly detection based on the outer edge position is possible.

[0162]

[11] According to any one of the substrate processing methods described in [1] to

[10] above, in the second processing, the position of the outer edge (Ew) is calculated in the horizontal and vertical directions of the image (MI), respectively, and in the third processing, the presence or absence of the above-mentioned abnormality is determined based on the calculation results of the position of the outer edge (Ew) in the horizontal and vertical directions, respectively, and when at least one of the horizontal and vertical directions meets the conditions for determining the above-mentioned abnormality, it is determined that the above-mentioned abnormality has occurred.

[0163] If the calculation results of the outer edge position in either the horizontal or vertical direction show an anomaly, it is judged as an anomaly, thus enabling more reliable detection of the occurrence of anomalies.

[0164]

[12] A method for monitoring substrate processing includes: repeatedly performing a monitoring process during a predetermined process of processing a substrate (W, WL), the predetermined process including an operation of rotating the substrate (W, WL) held in a holding part (52), the monitoring process including: a first process that detects the outer edge (Ew) in an image (MI) obtained by capturing an image of the area including the outer edge (Ew) of the surface (Wa) of the substrate (W, WL); a second process that calculates the position of the outer edge (Ew) in the image (MI) based on the detection result in the first process; and a third process that determines whether there is any abnormality in the holding of the substrate (W, WL) by the holding part (52) based on the calculation result in the second process.

[0165] The monitoring method for substrate processing is the same as the substrate processing method described above, and it can prevent malfunctions from occurring during substrate processing.

[0166]

[13] The monitoring method described in

[12] above further includes the following steps: if an abnormality is detected in the above monitoring process, during the execution of the above-specified process, the rotation speed of the substrate (W, WL) held in the holding part (52) is reduced, or the substrate (W, WL) held in the holding part (52) is stopped from rotating.

[0167] In this situation, it is possible to more reliably avoid continuing processing when an abnormal state has occurred.

[0168]

[14] According to the monitoring method described in

[12] or

[13] above, in the first process, a portion region (DR) of an image (MI) is extracted, and the outer edge (Ew) is detected in the portion region (DR).

[0169] It is foreseeable that in addition to surveillance processing, there may also be situations where image acquisition (MI) is required, but the image range required for other purposes is sometimes different from that required for surveillance processing. In the method described above, surveillance processing is performed using a portion of the region (DR), thus accommodating both surveillance processing and image acquisition for other purposes.

[0170]

[15] According to any of the monitoring methods described in

[12] to

[14] above, in the third process, the presence or absence of the above-mentioned abnormality is determined based on the comparison result between the position of the outer edge (Ew) calculated in the second process and the specified threshold (Th1, Th2).

[0171] If the position of the outer edge (Ew) changes significantly, it can be expected that an abnormality has occurred in the retention of the substrate (W, WL). In the above method, the abnormality in the retention of the substrate (W, WL) can be detected by simply comparing the position of the outer edge with a threshold.

[0172]

[16] According to any one of the monitoring methods described in

[12] to

[15] above, the third process includes: processing to calculate the frequency in the waveform information representing the time change of the position of the outer edge (Ew) obtained up to the execution time of the third process; and processing to determine whether there is the above-mentioned abnormality based on the comparison result between the frequency calculated according to the above-mentioned waveform information and the reference frequency corresponding to the set value of the rotation speed of the substrate (W, WL) when the above-mentioned specified process is executed.

[0173] In this case, anomalies that cannot be determined solely by the magnitude of changes in the outer edge position can be detected.

[0174]

[17] According to any of the monitoring methods described in

[12] to

[16] above, in the third process, the presence or absence of the above-mentioned abnormality is determined based on the judgment model and the waveform information representing the temporal change of the position of the outer edge (Ew) obtained up to the execution time of the third process, wherein the judgment model is pre-constructed by machine learning and can output the judgment result of whether or not the above-mentioned abnormality exists in response to the input of the information representing the temporal change of the position of the outer edge (Ew).

[0175] In this case, anomalies that cannot be determined solely by the magnitude of changes in the outer edge position can be detected.

[0176]

[18] According to any of the monitoring methods described in

[12] to

[17] above, wherein the specified processing is liquid processing, which includes processing of a processing liquid (L1) supplied to a substrate (W, WL) held in a holding part (52), the holding part (52) is surrounded by a cup-shaped body (70) used to receive the processing liquid (L1) supplied to the substrate (W, WL), in the second processing, in addition to the position of the outer edge (Ew), the position of the inner edge (Ec) of the cup-shaped body (70) is calculated, and in the third processing, the presence or absence of the above-mentioned abnormality is determined based on the distance (d) between the position of the outer edge (Ew) and the position of the inner edge (Ec) calculated in the second processing.

[0177] In this case, anomalies that cannot be determined solely by the magnitude of changes in the outer edge position can be detected.

[0178]

[19] According to any of the above-described monitoring methods

[12] to

[18] , in the second process, the position of the outer edge (Ew) is calculated by taking the average of the coordinates of multiple points detected as the outer edge (Ew) in the first process.

[0179] In the image (MI), the boundaries between the substrate (W, WL) and other regions may not be clear, and the detection results of the outer edge (Ew) in the first processing may contain noise. Even in the case of noise, averaging can reduce the influence of the calculated value of the outer edge position. Therefore, high-precision anomaly detection based on the outer edge position is possible.

[0180]

[20] According to any of the above-described monitoring methods

[12] to

[19] , in the second process, the position of the outer edge (Ew) is calculated in the horizontal and vertical directions of the image (MI), respectively, and in the third process, the presence or absence of the above-described abnormality is determined based on the calculation results of the position of the outer edge (Ew) in the horizontal and vertical directions, respectively, and when at least one of the horizontal and vertical directions satisfies the condition for determining the above-described abnormality, the above-described abnormality is determined to have occurred.

[0181] If the calculation results of the outer edge position in either the horizontal or vertical direction show an anomaly, it is judged as an anomaly, thus enabling more reliable detection of the occurrence of anomalies.

[0182]

[21] A computer-readable storage medium storing a program for causing a device to perform the substrate processing method described in any of [1] to

[11] above, or the monitoring method described in any of

[12] to

[20] above.

[0183] This storage medium, like the substrate processing method described above, is able to prevent malfunctions during substrate processing.

[0184]

[22] A substrate processing apparatus (1) includes: a processing unit (U1) that performs a predetermined processing on a substrate (W, WL), the predetermined processing including an operation of rotating the substrate (W, WL) held in a holding unit (52); and a monitoring processing execution unit (120) that repeatedly performs a monitoring process during the execution of the predetermined processing, the monitoring process including: a first processing that detects the outer edge (Ew) in an image (MI) obtained by capturing an image including the outer edge (Ew) of the surface (Wa) of the substrate (W, WL); a second processing that calculates the position of the outer edge (Ew) in the image (MI) based on the detection result in the first processing; and a third processing that determines whether there is any abnormality in the holding of the substrate (W, WL) by the holding unit (52) based on the calculation result in the second processing.

[0185] The substrate processing apparatus (1) is similar to the substrate processing method described above, and is able to prevent malfunctions during substrate processing.

[0186] Appendix 1. A substrate processing method and a substrate processing apparatus for performing the substrate processing, the substrate processing method comprising: a step of performing a predetermined processing on a laminated substrate (WL) formed by bonding two or more unit substrates (W1, W2) together; and a step of repeatedly performing a monitoring process during the execution of the predetermined processing, the monitoring process comprising: a first process for detecting an outer edge (edge) within an image (MI) obtained by capturing an image including the outer edge of the laminated substrate (WL); a second process for calculating the position of the outer edge within the image (MI) based on the detection result in the first process; and a third process for determining whether there is an abnormality in the predetermined processing based on the calculation result in the second process.

[0187] Appendix 2. A prescribed process is performed on a laminated substrate (WL) composed of two or more unit substrates (W1, W2) bonded together. During the execution of the prescribed process, the following processes are performed: a first process, which detects the outer edge (edge) within an image (MI) obtained by capturing an image including the outer edge of the laminated substrate (WL); a second process, which calculates the position of the outer edge within the image (MI) based on the detection result in the first process; and a third process, which determines whether there are any abnormalities in the prescribed process based on the calculation result in the second process. The prescribed process includes a process of moving the laminated substrate (WL) to the top and a process of supporting the laminated substrate (WL) in the top position.

[0188] Note 3. According to the substrate processing method and substrate processing apparatus described in Note 1 or 2, the outer edge (Ew) of the surface (Wa) of the laminated substrate (WL) is detected in the first processing.

Claims

1. A substrate processing method, characterized in that, include: The steps of performing a prescribed process on the substrate include rotating the substrate held in the holding portion; and During the execution of the aforementioned procedures, the monitoring process is repeated. The monitoring process includes: The first process involves detecting the outer edge within an image obtained by capturing a region including the outer edge of the surface of the substrate. The second process calculates the position of the outer edge within the image based on the detection results from the first process; and The third process, based on the calculation results of the second process, determines whether there is any abnormality in the holding of the substrate by the holding part.

2. The substrate processing method according to claim 1, characterized in that: The substrate, which is the object of the processing in the specified process, is a stacked substrate obtained by bonding two or more unit substrates together.

3. The substrate processing method according to claim 2, characterized in that: The image was obtained by taking a picture using a camera positioned diagonally above the laminated substrate. In the first process, based on the extraction of a portion of the image, the outer edge is detected within that portion of the image. The portion of the region is positioned above the horizontal baseline within the image, which includes the center of the stacked substrate.

4. The substrate processing method according to claim 1, characterized in that, It also includes the following steps: If the abnormality is detected during the monitoring process, the speed at which the substrate held in the holding portion rotates is reduced, or the substrate held in the holding portion is stopped rotating, during the execution of the prescribed process.

5. The substrate processing method according to claim 1, characterized in that: In the first process, based on the extraction of a portion of the image, the outer edge is detected within that portion of the image.

6. The substrate processing method according to claim 1, characterized in that: In the third process, the presence or absence of the abnormality is determined based on the comparison result between the position of the outer edge calculated in the second process and a predetermined threshold.

7. The substrate processing method according to claim 1, characterized in that: The third process includes: The process of calculating the frequency in the waveform information representing the time-varying position of the outer edge up to the execution time of the third process; and The presence or absence of the abnormal processing is determined by comparing the frequency calculated based on the waveform information with a reference frequency corresponding to the set value of the substrate rotation speed when the specified processing is performed.

8. The substrate processing method according to claim 1, characterized in that: In the third process, the presence or absence of the abnormality is determined based on the judgment model and the waveform information representing the time change of the position of the outer edge obtained up to the execution time of the third process. The judgment model is pre-built by machine learning and can output a judgment result on the presence or absence of the abnormality in response to the input of the information representing the time change of the position of the outer edge.

9. The substrate processing method according to claim 1, characterized in that: The specified treatment is a liquid treatment, which includes supplying a treatment liquid to the substrate held in the holding portion. The retaining portion is used to receive the processing liquid supplied to the substrate, surrounded by a cup-shaped body. In the second process, in addition to calculating the position of the outer edge, the position of the inner edge of the cup-shaped body is also calculated. In the third process, the presence or absence of the abnormality is determined based on the distance between the position of the outer edge and the position of the inner edge calculated in the second process.

10. The substrate processing method according to any one of claims 1 to 9, characterized in that: In the second process, the position of the outer edge is calculated by taking the average of the coordinates of multiple points detected as the outer edge in the first process.

11. The substrate processing method according to any one of claims 1 to 9, characterized in that: In the second process, the positions of the outer edges are calculated in the horizontal and vertical directions of the image, respectively. In the third process, the presence or absence of the abnormality is determined based on the calculation results of the position of the outer edge in the horizontal and vertical directions, respectively. When at least one of the horizontal and vertical directions meets the conditions for determining the abnormality, the abnormality is determined to have occurred.

12. A method for monitoring substrate processing, characterized in that: This includes repeatedly performing monitoring processes during the prescribed processing of the substrate, wherein the prescribed processing includes rotating the substrate held in the holding portion. The monitoring process includes: The first process involves detecting the outer edge within an image obtained by capturing a region including the outer edge of the surface of the substrate. The second process calculates the position of the outer edge within the image based on the detection results from the first process; and The third process, based on the calculation results of the second process, determines whether there is any abnormality in the holding of the substrate by the holding part.

13. A computer-readable storage medium, characterized in that: The device stores a program for executing the substrate processing method according to any one of claims 1 to 9.

14. A computer-readable storage medium, characterized in that: The device contains a program for performing the monitoring method of claim 12.

15. A substrate processing apparatus, characterized in that, include: The processing unit performs a prescribed process on the substrate, the prescribed process including an operation of rotating the substrate held in the holding unit; and The monitoring and processing execution unit repeatedly performs monitoring and processing during the execution of the prescribed processing. The monitoring process includes: The first process involves detecting the outer edge within an image obtained by capturing a region including the outer edge of the surface of the substrate. The second process calculates the position of the outer edge within the image based on the detection results from the first process; and The third process, based on the calculation results of the second process, determines whether there is any abnormality in the holding of the substrate by the holding part.

Images