Process chamber with radio frequency return path

Abstract

Embodiments of the present disclosure relate to a processing chamber. The processing chamber includes a lid assembly, a baffle, a pedestal assembly, a ground plate, and a ground ring. A processing region is defined between the lid assembly and the pedestal assembly. The pedestal assembly includes an isolator plate assembly. The isolator plate assembly includes three or more plates. Each plate includes one or more alignment tabs, one or more protrusions, one or more lift pin holes, a ground plate, and a ground ring. The lid assembly, the baffle, and the pedestal assembly form an RF return path. The ground plate includes a cylindrical core, an annular body, and an annular protrusion. The ground ring includes an annular body, an annular wall, an annular connector, and an annular tab. The ground ring and the ground plate are electrically connected by an RF live.

Description

Background Technology Technical Field

[0002] The embodiments disclosed herein generally relate to a processing chamber for depositing one or more layers on a substrate. Specifically, the embodiments disclosed herein relate to a processing chamber having a radio frequency (RF) return path.

[0003] Related technical descriptions

[0004] Integrated circuits can include more than a billion field-effect transistors (FETs), such as complementary metal-oxide-semiconductor (CMOS) FETs, which are formed on a substrate (e.g., a semiconductor wafer) and cooperate to perform various functions within a circuit. Reliable production of smaller features is one of the key technologies for next-generation very large-scale integration (VLSI) and ultra-large-scale integration (ULSI) of semiconductor devices, especially for the 3-nanometer (N3) node. However, driven by limitations in integrated circuit technology, the shrinking interconnect dimensions in VLSI and ULSI technologies have placed additional demands on processing power. Reliable gate patterning is crucial for the success of integrated circuits and for continuously striving to improve circuit density and the quality of individual substrates and dies.

[0005] Metal contamination due to damage and corrosion of the processing chamber can lead to contamination of semiconductor components. For example, the high temperatures and use of volatile gases in the processing chamber can cause damage and corrosion. This damage and corrosion may then affect the processes performed within the chamber and may require replacement of various components within the processing chamber and / or replacement of the processing chamber itself.

[0006] Therefore, there is a need in this field for improved technologies to reduce damage and corrosion within processing chambers. Summary of the Invention

[0007] The embodiments disclosed herein generally relate to a processing chamber for depositing one or more layers on a substrate. Specifically, the embodiments disclosed herein relate to a processing chamber having an RF return path.

[0008] In one embodiment, a processing chamber is disclosed. The processing chamber includes a cover assembly, a baffle plate, a pedestal assembly, a ground plane, and a grounding ring. A processing area is defined between the cover assembly and the pedestal assembly. The pedestal assembly includes an isolator plate assembly. The isolator plate assembly includes three or more plates. Each plate includes one or more alignment tabs, one or more protrusions, one or more riser holes, a ground plane, and a grounding ring. The cover assembly, baffle plate, and pedestal assembly form an RF return path.

[0009] In another embodiment, a processing system suitable for semiconductor substrate processing is disclosed. The processing system includes a cover assembly, a baffle plate, a platform assembly, an isolator plate assembly, a ground plane, and a ground ring. A processing area is defined between the cover assembly and the platform assembly. The ground plane includes a cylindrical core, an annular body, and an annular protrusion. The cover assembly, baffle plate, and platform assembly form an RF return path.

[0010] In another embodiment, a control unit for a processing system is disclosed. The processing system stores instructions that, when executed by a processor, cause the system to process a substrate within a processing chamber by receiving the substrate on a heater pedestal of a pedestal assembly. The pedestal assembly moves from a cleaning position to a processing position. RF power is applied to the processing chamber along an RF return path to create a bias between the spray head and the pedestal assembly. The substrate is processed, and the pedestal assembly is moved from the processing position to a cleaning position. The substrate is removed from the processing chamber, and the processing chamber is cleaned. The processing chamber includes a cover assembly, a baffle plate, a pedestal assembly, and an isolator plate assembly. The cover assembly includes a spray head having one or more orifices. A processing area is defined between the cover assembly and the pedestal assembly. The pedestal assembly includes a ground plane and a grounding ring. The grounding ring includes an annular body, an annular wall, an annular connector, and an annular tab. The grounding ring and the ground plane are electrically connected via an RF strip. The cover assembly, the baffle plate, and the pedestal assembly form an RF return path. Attached Figure Description

[0011] To enable a more detailed understanding of the features set forth above in this disclosure, a more specific description of the disclosure, which has been briefly summarized above, can be made with reference to embodiments, some of which are illustrated in the accompanying drawings. However, it should be noted that the drawings illustrate exemplary embodiments only and should not be construed as limiting the scope, and other equally effective embodiments are permitted.

[0012] Figure 1A This is a schematic side view of the processing chamber according to an embodiment, in which the pedestal assembly is in the deposition position.

[0013] Figure 1B According to the implementation method Figure 1A A schematic side view of the processing chamber, in which the pedestal assembly is in the cleaning position.

[0014] Figure 2A According to the implementation method Figure 1A A cross-sectional view of the isolation plate assembly, grounding plate, and grounding ring included in the processing chamber.

[0015] Figure 2B This is a top view of the plate of the isolation plate assembly according to the embodiment.

[0016] Figure 2C This is a cross-sectional perspective view of the grounding plate and grounding ring according to the embodiment.

[0017] Figure 2D This is a top view of the grounding ring according to the implementation method.

[0018] Figure 2E This is a cross-sectional view of the annular protrusion according to the embodiment.

[0019] For ease of understanding, the same reference numerals have been used where possible to designate common elements in the figures. It is conceivable that elements and features of one embodiment may be advantageously incorporated into other embodiments without further explanation. Detailed Implementation

[0020] The embodiments disclosed herein generally relate to a processing chamber for depositing one or more layers on a substrate. Specifically, the embodiments disclosed herein relate to a processing chamber having an RF return path. The various embodiments described herein allow for reduction of corrosion and / or other types of damage that can occur when processing a substrate within the processing chamber. Additionally, the various embodiments enable cost reduction, for example, by reducing manufacturing and material costs, of the components included in the processing chamber.

[0021] Figure 1A This is a schematic side view of the processing chamber 150, in which the pedestal assembly 190 is in the deposition position. Figure 1BThis is a schematic side view of a processing chamber 150, in which the stage assembly 190 is in a clean position. The processing chamber 150 is configured to deposit a variety of materials (e.g., metals, polymers, or other deposition materials) onto a substrate disposed within the processing chamber 150. The processing chamber 150 includes the stage assembly 190, the cover assembly 100, the chamber body 120, the baffle plate 195, the pump plate 175, and the control unit 180. The chamber body 120 is configured to protect the substrate disposed within the chamber body 120 from the influence of the external environment. Generally, the processing chamber 150 can be used to perform any type of substrate processing, including, for example, chemical vapor deposition (CVD), plasma-enhanced CVD (PE-CVD), plasma vapor deposition (PVD), atomic layer deposition (ALD), pulsed CVD, plasma-enhanced-ALD (PE-ALD), derivatives thereof, or combinations thereof. The processing chamber 150 can be used for further processing (e.g., annealing) of the deposited material. Therefore, both the deposition process and subsequent processing steps can be performed in situ within the same processing chamber 150.

[0022] The deposition process includes providing power (e.g., RF power) to the processing chamber 150 to generate an electrical bias between the spray head 156 and the pedestal assembly 190. RF return path 101 enables the power provided to the processing chamber to return to ground.

[0023] As shown in the figure, the cover assembly 100 includes a spray head 156 having an orifice 109. The cover assembly 100 is configured to deliver process gas through the orifice 109 into a processing area 126 disposed below the spray head 156. The process gas may be supplied by a process gas source. The cover assembly 100 may include water channels to regulate the temperature of the cover assembly 100 during the deposition process.

[0024] The stage assembly 190 is configured to support a substrate (not shown) during processing, such as during the deposition of one or more layers on a substrate. As shown, the stage assembly 190 includes a heater stage 152, a stage post 154, an isolator plate assembly 130, a grounding ring 140, and a ground plane 160. The heater stage 152 can be configured to support the substrate. The heater stage 152 is connected to the stage post 154 and can move vertically within the processing chamber 150. The heater portion of the heater stage 152 may include a ceramic material. A processing area 126 is defined between the heater stage 152 and the spray head 156.

[0025] Figure 2A This is a cross-sectional view of the isolator plate assembly 130, the grounding plate 160, and the grounding ring 140. Figure 2B This is a top view of the plates of the isolator plate assembly 130. A heater platform 152 is mounted on the isolator plate assembly 130. The isolator plate assembly 130 may include three or more plates 131, such as a first plate 131A, a second plate 131B, a third plate 131C, and a fourth plate 131D. Each of the plates may include one or more lifting rod holes 231, one or more alignment tabs 232, and multiple protrusions 233. The multiple protrusions are configured to assist the alignment plate and control the radial displacement of the plate 131.

[0026] One or more lifting rod holes 231 are configured such that one or more lifting rods (not shown) can lift the substrate away from the heater stage 152, so that the substrate can be removed from the processing chamber 150 and / or the one or more lifting rods can accommodate the substrate when the substrate is loaded into the processing chamber 150.

[0027] The insulator plate assembly 130 may have a thickness of about 20 mm to about 30 mm, such as about 24 mm. Each plate of the insulator plate assembly 130 may have a thickness of about 5 mm to about 7 mm. However, the thickness of individual plates 131 may vary; for example, the first plate 131A may have a thickness of about 5.5 mm to about 5.8 mm, the second plate 131B may have a thickness of about 5.55 mm to about 5.9 mm, the third plate 131C may have a thickness of about 5.5 mm to about 5.8 mm, and the fourth plate 131D may have a thickness of about 6.5 mm to about 6.8 mm. The plates may have a radius R1 of about 150 mm to about 200 mm, such as about 170 mm.

[0028] Each plate of the isolator plate assembly 130 may further include a radial step 235 at the outer edge of the plate 131. The radial step 235 may have a height of about 0.25 mm to about 0.5 mm, such as about 0.37 mm. The radial step 235 extends radially inward from the edge of the plate 131 by a distance D3. The distance D3 ranges from about 5 mm to about 10 mm, such as about 10.5 mm. The radial step 235 can reduce the diffusion of cleaning gases and process gases between the plates 131, which can lead to a reduction in corrosion of the isolator plate assembly 130.

[0029] One or more alignment tabs 232 achieve alignment of plate 131. One or more alignment tabs 232 may be spaced apart from the center of plate at a radius R2 of about 100 mm to about 120 mm. One or more alignment tabs 232 may have a width W1 of about 20 mm to about 30 mm, such as about 25.4 mm.

[0030] The plurality of protrusions 233 may include about 6 to about 30 protrusions, such as about 18 protrusions. Each protrusion may have a diameter of about 1 mm to about 3 mm, such as about 2 mm, and a height of about 0.25 mm to about 1.0 mm, such as about 0.5 mm. Each plate of the insulator plate assembly 130 may include a metallic material, such as an aluminum-containing material (e.g., alumina), a nickel-containing material, a titanium-containing material, a molybdenum-containing material, a tungsten-containing material, or a combination thereof.

[0031] Including multiple plates (e.g., three or more plates 131) in the isolator plate assembly 130 allows for a reduction in the temperature of the isolator plate assembly 130. For example, at higher processing temperatures (e.g., 650°C), the isolator plate assembly 130 can be raised to a temperature less than about 250°C, such as less than about 200°C. Additionally, including multiple plates in the isolator plate assembly 130 allows for a reduction in the temperature of the ground plane 160. The ground plane 160 can be raised to a temperature less than about 300°C, such as less than about 275°C. By increasing the number of plates and reducing the thickness of each plate 131, the isolator plate assembly 130 can more effectively dissipate heat from the processing operation.

[0032] Generally, as the temperature of the ground plane 160 and the multiple plates of the insulator plate assembly 130 increases, the materials of the ground plane 160 and the multiple plates of the insulator plate assembly 130 will expand. As the material expands, the stress within the material increases. Lowering the temperature of the insulator plate assembly 130 and the ground plane 160 can reduce the stress in the ground plane 160 and the multiple plates of the insulator plate assembly 130. The ground plane 160 may have a stress of less than about 100 MPa, such as less than about 50 MPa. The insulator plate assembly 130 may have a stress of less than about 75 MPa, such as less than about 60 MPa.

[0033] The isolator plate assembly 130 is mounted on the ground plane 160. The ground plane 160 includes a cylindrical core 261, an annular body 262, and an annular protrusion 263. The cylindrical core 261 circumferentially surrounds the pedestal post 154. The annular protrusion 263 is radially spaced outward from the cylindrical core 261. The annular body 262 extends between the cylindrical core 261 and the annular protrusion 263. The annular body has a thickness of about 20 mm to about 30 mm, such as about 24.5 mm.

[0034] The top surface of the grounding plate 160 may include radial steps 265. Radial steps 265 may have a height of about 0.25 mm to about 0.5 mm, such as about 0.37 mm. Radial steps 265 extend radially inward from the edge of the plate 131 by a distance D4. The distance D4 is about 15 mm to about 30 mm, such as about 22 mm. Radial steps 265 can reduce the diffusion of cleaning gases and process gases between the insulator plate assembly 130 and the grounding plate 160, which can lead to reduced corrosion of both the insulator plate assembly 130 and the grounding plate 160.

[0035] Grounding plate 160 may include metallic materials, such as aluminum-containing materials (e.g., alumina), nickel-containing materials, titanium-containing materials, molybdenum-containing materials, tungsten-containing materials, or combinations thereof. In some embodiments, grounding plate 160 may have a coating. The coating may include metallic materials, such as aluminum-containing materials (e.g., alumina), nickel-containing materials, titanium-containing materials, molybdenum-containing materials, tungsten-containing materials, or combinations thereof. The use of aluminum-containing materials can reduce corrosion of grounding plate 160 when exposed to clean gases (e.g., NF3) and process gases. The reduction in corrosion can eliminate the need for protective components (e.g., external isolators) that would otherwise be required to isolate grounding plate 160 from clean and process gases. Eliminating the need for protective components can reduce manufacturing costs.

[0036] The components of the ground plane 160 (e.g., cylindrical core 261), the annular body 262, and the annular protrusion 263 can be a single integral piece. Implementing the ground plane 160 as a single integral piece eliminates the need for mechanical couplers between the individual components of the ground plane 160 and any gaskets between the individual components of the ground plane 160. Reducing the number of mechanical couplers and / or gaskets can reduce manufacturing costs and can reduce the possibility of corrosion and contamination from corrosion.

[0037] A grounding plate 160 is positioned on and spaced apart from a grounding ring 140. The grounding ring 140 includes an annular body 241, an annular wall 242, an annular connector 243, and an annular tab 244. The annular wall 242 and the annular tab 244 form an annular gap 245. The annular gap 245 is configured to receive an annular protrusion 263. However, the annular protrusion 263 does not contact the annular wall 242, the annular connector 243, or the annular tab 244. The annular connection includes one or more purge holes 221. The one or more purge holes 221 introduce purge gas from the chamber body 120 into the processing area 126.

[0038] Figure 2CThis is a cross-sectional perspective view of the ground plane 160 and the grounding ring 140. The grounding ring 140 further includes a spring 216 and a shoulder screw 217. The spring 216 has a diameter of about 1.85 mm to about 2.3 mm. Each of the components listed above may include nickel-containing materials, chromium-containing materials, molybdenum-containing materials, or combinations thereof, such as nickel-chromium-molybdenum alloys (e.g., Hastelloy C276). The use of nickel-chromium-molybdenum alloys can reduce component corrosion, which can improve the lifespan of the processing chamber 150 and reduce the possibility of substrate contamination.

[0039] An RF strip 218 is bridging the grounding ring 140 and the ground plane 160. The processing chamber 150 may include one or more RF strips 218, such as about 6 to 12 RF strips 218, such as about 9 RF strips 218. The RF strips 218 are configured to provide an electrical path as part of the RF return path 101 between the ground plane 160 and the grounding ring 140.

[0040] When the heater stage 152 is in the elevated deposition position, the substrate can be supported on the heater stage 152. In the deposition position, the heater stage 152 holds the substrate relatively close to the lower surface of the spray head 156. The processing space of the processing area 126 ranges from about 25 mm to about 30 mm, such as about 28 mm. The processing space allows for variations in different deposition processes (e.g., CVD, PVD, ALD) and deposition parameters.

[0041] In the lowered cleaning position, a cleaning gas (e.g., NF3) can be used to clean the processing chamber 150. The cleaning space of the processing area ranges from about 75 mm to about 100 mm, such as about 90 mm.

[0042] In a further lowered transfer position, one or more lifting rods can accommodate substrates loaded into the processing chamber 150 through loading ports (not shown) in the chamber body 120.

[0043] The RF tape 218 is configured to bend and flex as the stage assembly 190 moves from a cleaning position to a processing position, and vice versa. In the processing position, the RF tape 218 can bend to a distance greater than about 50 mm, such as greater than about 55 mm, such as greater than about 60 mm. In the cleaning position, the RF tape 218 can bend to a distance of about 25 mm to about 35 mm, such as about 30 mm. The RF tape 218 has a thickness of about 1 mm. The RF tape 218 may comprise a nickel-containing material, a chromium-containing material, a molybdenum-containing material, or a combination thereof, such as a nickel-chromium-molybdenum alloy (e.g., Heines Alloy 242). In some embodiments, the RF tape 218 may have a coating. The coating may be a metallic material, such as an aluminum-containing material (e.g., alumina), a nickel-containing material, a titanium-containing material, a molybdenum-containing material, a tungsten-containing material, or a combination thereof. The use of nickel-chromium-molybdenum alloy and aluminum-containing material coatings can reduce corrosion of the RF tape 218, which can improve the lifespan of the processing chamber 150 and reduce the possibility of substrate contamination.

[0044] Figure 2D This is a top view of the grounding ring 140. The grounding ring 140 further includes a plurality of bridge structures 219. The bridge structures 219 bridging the annular body 241 and the annular wall 242. The annular body 241 of the grounding ring 140 further includes shoulder screw holes 224. The shoulder screw holes 224 are configured to allow shoulder screws 217 to engage the grounding plate 160.

[0045] In the processing position, spring 216 has a preload height between 30 mm and 70 mm, such as 55 mm. This preload height allows the substrate release position to be further away from the base plate 199. Increasing the distance between the substrate release position and the base plate 199 reduces spring interference with the base plate 199. Additionally, the preload height reduces the preload force on the grounding ring. The preload force can be less than 25 kgm / s. 2 Such as less than 20 kgm / s 2 .

[0046] Figure 2E This is a cross-sectional view of the annular tab 244. The annular tab 244 further includes a groove 246. The groove 246 includes an opening 247, a distal end 248, a first sidewall 249A, and a second sidewall 249B. The depth d1 of the groove 246 ranges from about 2.5 mm to about 5 mm, such as from about 3.25 mm to about 3.5 mm. The opening 247 has a radius R3 of about 4.5 mm to about 5.0 mm, such as about 4.7 mm. The first sidewall 249A and the second sidewall 249B extend from the opening 247 to the distal end 248 of the groove 246. The distal end 248 has a radius R4 of about 4.75 mm to about 5.25 mm, such as about 4.84 mm.

[0047] The groove 246 of the annular tab 244 is configured to receive the RF pad 222. The RF pad 222 provides an electrical connection between the grounding ring 140 and the baffle plate 195. The RF pad 222 may be a coiled wire. The diameter of the coil may be from about 5 mm to about 6 mm, such as about 5.46 mm. The diameter of the RF pad 222 may be from about 350 mm to about 400 mm, such as about 385 mm. The RF pad 222 may include nickel-containing materials, chromium-containing materials, molybdenum-containing materials, or combinations thereof, such as a nickel-chromium-molybdenum alloy (e.g., Hastelloy C276). The use of a nickel-chromium-molybdenum alloy can reduce component corrosion, which can improve the lifespan of the processing chamber 150 and reduce the possibility of substrate contamination.

[0048] Control unit 180 is configured to control various components of processing chamber 150. Control unit 180 can be one of any type of general-purpose computer processor that can be used to control various chambers and subprocessors in an industrial setting. As shown, control unit 180 includes a central processing unit (CPU) 182, supporting circuitry 184, and memory 186. CPU 182 can use any suitable memory 186, such as random access memory, read-only memory, floppy disk drive, optical drive, hard disk, or any other form of local or remote digital storage device. Various supporting circuits can be coupled to CPU 182 to support processing chamber 150. Control unit 180 can be coupled to another controller located adjacent to a single chamber component. Bidirectional communication between control unit 180 and various other components of processing chamber 150 is handled via a large number of signal cables collectively referred to as a signal bus. Control unit 180 can also be configured to provide RF power along RF return path 101 to the processing chamber to generate an electrical bias between spray head 156 and pedestal assembly 190. In addition, the control unit 180 can be configured to move the platform assembly 190 between the cleaning position, the conveying position, and the processing position.

[0049] In the processing position, the annular tab 244 of the grounding ring 140 is configured to engage the baffle plate 195. The RF gasket 222 provides an electrical connection between the grounding ring 140 and the baffle plate 195. Although in the processing position, the cover assembly 100, pump suction plate 175, baffle plate 195, grounding ring 140, and grounding plate 160 provide an RF return path 101 from the control unit 180 to ground.

[0050] The components of the processing chamber 150 can be coupled to each other using one or more mechanical couplers (e.g., rivets, screws, or other types of hardware). The mechanical couplers may include metallic materials, such as aluminum-containing materials (e.g., alumina), nickel-containing materials, titanium-containing materials, molybdenum-containing materials, tungsten-containing materials, or combinations thereof. The use of aluminum-containing materials reduces corrosion of the ground plane 160 when exposed to cleaning gases (e.g., NF3) and processing gases. Reducing corrosion of the mechanical couplers can improve the lifespan of the processing chamber 150 and reduce the likelihood of substrate contamination.

[0051] In summary, this disclosure relates to a processing chamber. The processing chamber includes a cover assembly, a baffle plate, a pedestal assembly, a ground plane, and a grounding ring. A processing area is defined between the cover assembly and the pedestal assembly. The pedestal assembly includes an isolator plate assembly. The isolator plate assembly includes three or more plates. Each plate includes one or more alignment tabs, one or more protrusions, one or more riser holes, a ground plane, and a grounding ring. The cover assembly, baffle plate, and pedestal assembly form an RF return path. The ground plane includes a cylindrical core, an annular body, and an annular protrusion. The grounding ring includes an annular body, an annular wall, an annular connector, and an annular tab. The grounding ring and ground plane are electrically connected via an RF band. The various embodiments described herein allow for a reduction in corrosion and / or other types of damage that may occur when processing a substrate within the processing chamber. Additionally, the various embodiments reduce the cost of the components included in the processing chamber, for example, by reducing manufacturing and material costs.

[0052] Although the foregoing describes embodiments of this disclosure, other and additional embodiments of this disclosure may be devised without departing from the basic scope of this disclosure.

Claims

1. A processing chamber, the processing chamber comprising: Lid assembly; Baffle plate; A pedestal assembly, wherein a processing area is defined between the cover assembly and the pedestal assembly, the pedestal assembly comprising: Insulator plate assembly, the insulator plate assembly comprising three or more plates, wherein each plate comprises: One or more alignment tabs; One or more protrusions; One or more lifting rod holes; Flooring; and Grounding ring, The cover assembly, the baffle plate, and the pedestal assembly form an RF return path.

2. The processing chamber of claim 1, wherein the plate of the isolation plate assembly comprises an aluminum-containing material.

3. The processing chamber of claim 1, wherein the plate of the isolator plate assembly further comprises a radial step having a height of about 0.25 mm to about 0.5 mm.

4. The processing chamber of claim 1, wherein the plate of the isolation plate assembly has a thickness of about 5 mm to about 7 mm.

5. The processing chamber of claim 1, wherein the isolation plate assembly has a thickness of about 20 mm to about 30 mm.

6. The processing chamber of claim 1, wherein the one or more protrusions have a diameter of about 1 mm to about 3 mm and a height of about 0.25 mm to about 1.0 mm.

7. The processing chamber of claim 1, wherein the alignment tabs are spaced apart from the center of the plate at a radius of about 100 mm to about 120 mm.

8. A processing system suitable for processing semiconductor substrates, the processing system comprising: Lid assembly; Baffle plate; A pedestal assembly, wherein a processing area is defined between the cover assembly and the pedestal assembly, the pedestal assembly comprising: Insulator plate assembly; Grounding plate, the grounding plate comprising: Cylindrical core; Ring-shaped main body; and Annular protrusions; and Grounding ring, The cover assembly, the baffle plate, and the pedestal assembly form an RF return path.

9. The processing system of claim 8, wherein the processing area at the processing location is about 25 mm to about 30 mm.

10. The processing system of claim 8, wherein the processing area in the cleaning location ranges from about 75 mm to about 100 mm.

11. The processing system of claim 8, wherein the ground plane is an integral piece.

12. The processing system of claim 8, wherein the ground plane comprises an aluminum-containing material.

13. The processing system of claim 8, wherein the grounding plate further comprises radial steps having a height of about 0.25 mm to about 0.5 mm.

14. The processing system of claim 13, wherein the radial step extends radially inward from the edge of the ground plane by about 15 mm to about 30 mm.

15. A control unit of a storage instruction processing system, wherein the instructions, when executed by a processor, cause the system to: By applying RF power along the RF return path to a processing chamber to generate a bias voltage between the spray head and the pedestal assembly and to process the substrate within the processing chamber, wherein the processing chamber comprises: A cover assembly, the cover assembly including the spray head, the spray head having one or more holes; Baffle plate; A pedestal assembly, wherein a processing area is defined between the cover assembly and the pedestal assembly, the pedestal assembly comprising: Insulator plate assembly; Flooring; and Grounding ring, the grounding ring comprising: An annular body, wherein the grounding ring and the grounding plate are electrically connected via an RF strip; Circular wall; Ring connectors; and Annular protrusions, The cover assembly, the baffle plate, and the pedestal assembly form an RF return path.

16. The processing system of claim 15, wherein the annular tab further comprises a groove configured to receive an RF pad.

17. The processing system of claim 16, wherein the RF pad is configured to provide an electrical connection between the grounding ring and the choke plate.

18. The processing system of claim 16, wherein the RF pad comprises a nickel-containing material, a chromium-containing material, a molybdenum-containing material, or a combination thereof.

19. The processing system of claim 16, wherein the RF pad has a diameter of about 350 mm to about 400 mm.

20. The processing system of claim 16, wherein the RF pad comprises a coiled wire having a diameter of about 5 mm to about 6 mm.

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