Designing perception dynamic pixel size to improve scanning electron microscope inspection and metrology throughput

Abstract

A method for improving throughput of a charged particle beam device is disclosed, and more specifically, a method for improving imaging throughput by associating a region type on a sample with a pixel size and dynamically adjusting a scan over a field of view based on whether the scan is over a region type associated with the pixel size.

Description

Cross-reference to related applications

[0001] This application claims priority to U.S. Provisional Patent Application No. 63 / 547,515, filed November 6, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0002] The embodiments disclosed herein disclose a method for improving the throughput of an imaging device, and more specifically, a method for improving imaging throughput by specifying a region on a sample to determine the dynamic pixel size in the acquired image. Background Technology

[0003] In the manufacturing process of integrated circuits (ICs), incomplete or finished circuit components are inspected to ensure they are manufactured according to design, free of defects, and possess the desired electrical characteristics. Inspection systems utilizing optical microscopes or charged particle (e.g., electron) beam microscopes (such as scanning electron microscopy (SEM)) can be employed. As the physical dimensions of IC components continue to shrink, the accuracy and yield of IC inspection become increasingly important. In SEM, a primary electron beam with relatively high energy is accelerated to a specific landing energy and lands on the sample, where it is focused to form a probe spot. Due to this focused probe spot of primary electrons, secondary electrons are generated from the surface. These secondary electrons are detected by an electron detector to generate an SEM image of the sample.

[0004] Inspection images, such as SEM images, can be used to identify or classify defects (one or more) in manufactured ICs. However, acquiring images for the inspection or metrological analysis of manufactured ICs may spend excessive time on empty areas of the device that may not be useful in defect inspection or metrological analysis. To improve defect detection and metrological analysis, a method that can increase imaging throughput is needed. Summary of the Invention

[0005] The embodiments provided herein disclose a method for improving the throughput of an imaging device, and more specifically, a method for improving imaging throughput by specifying a region on a sample to determine the dynamic pixel size in the acquired image.

[0006] Some embodiments of this disclosure provide a non-transitory computer-readable medium including a set of instructions executable by one or more processors of a computing device to cause the computing device to perform operations for improving the throughput of an imaging apparatus. The operations include: evaluating data associated with a field of view of a sample to determine a first type region and a second type region on the sample; associating the first type region with a first pixel size; associating the second type region with a second pixel size different from the first pixel size; and dynamically adjusting a scan in the field of view based on whether the scan is over the first type region associated with the first pixel size or over the second type region associated with the second pixel size.

[0007] In some embodiments, a system for improving imaging throughput is provided. The system includes one or more processors configured to execute instructions to cause the system to perform operations. The operations include: evaluating data associated with a field of view of a sample to determine a first type region and a second type region on the sample; associating the first type region with a first pixel size; associating the second type region with a second pixel size different from the first pixel size; and dynamically adjusting a scan in the field of view based on whether the scan is over the first type region associated with the first pixel size or over the second type region associated with the second pixel size.

[0008] Other advantages of this disclosure will become apparent from the following description taken in conjunction with the accompanying drawings, some embodiments of which are illustrated by way of illustration and example. Attached Figure Description

[0009] The above and other aspects of this disclosure will become more apparent from the description of exemplary embodiments in conjunction with the accompanying drawings.

[0010] Figure 1 This is a schematic diagram illustrating an example photolithography projection assembly for manufacturing an IC according to an embodiment of the present disclosure.

[0011] Figure 2 This is a schematic diagram illustrating an example single-beam electron beam inspection (EBI) system according to an embodiment of the present disclosure.

[0012] Figure 3 This is a schematic diagram of an example multi-beam tool according to an embodiment of the present disclosure.

[0013] Figure 4A This is a schematic diagram illustrating various scan lines of an electron beam applied by a charged particle beam device through a sample surface according to embodiments of the present disclosure.

[0014] Figure 4BThis is an example illustration showing how the electrical signal applied to a charged particle beam deflector varies with distance from the sample.

[0015] Figure 5A and Figure 5B This is an example image of the manufacturing pattern of the sample.

[0016] Figure 6 This is a flowchart of a typical method for imaging a sample using a charged particle beam device.

[0017] Figure 7A This is an illustration of an example field of view of a sample with varying sample pixel sizes and correspondingly scanned according to an embodiment of the present disclosure.

[0018] Figure 7B This is an illustration of an example graph of an electrical signal applied to a deflector over time at a rate associated with the pixel size, according to an embodiment of the present disclosure.

[0019] Figure 8A This is an illustration of an example design for perceptual dynamic analysis of the field of view of a sample according to an embodiment of the present disclosure.

[0020] Figure 8B This is an example schematic diagram of the dynamic pixel dimensions associated with the first and second type regions on the sample.

[0021] Figure 8C This is an example illustration of a charged particle beam scanning on a sample based on the rate at which an electrical signal applied to a deflector of a charged particle beam device to deflect the charged particle beam, according to an embodiment of the present disclosure.

[0022] Figure 9 This is an example illustration of saving an image acquired at a dynamic pixel size according to an embodiment of the present disclosure.

[0023] Figure 10 This is an example block diagram illustrating a system 1000 for improving imaging throughput according to an embodiment of the present disclosure.

[0024] Figure 11 This is an example flowchart illustrating a method 1100 for improving the throughput of an imaging apparatus according to an embodiment of the present disclosure. Detailed Implementation

[0025] Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. The following description refers to the accompanying drawings, wherein the same numerals in different drawings denote the same or similar elements unless otherwise stated. The implementations set forth in the following description of the exemplary embodiments do not represent all implementations conforming to this disclosure. Rather, they are merely examples of apparatuses and methods relating to aspects of the invention as set forth in the appended claims.

[0026] Enhanced computing power in electronic devices can be achieved by significantly increasing the packaging density of circuit components such as transistors, capacitors, and diodes on IC chips, while simultaneously reducing the physical size of the devices. For example, the IC chip in a smartphone the size of a thumbnail can include over 2 billion transistors, each smaller than 1 / 1000th the size of a human hair. Therefore, it is not surprising that semiconductor IC manufacturing is a complex and time-consuming process with hundreds of individual steps. Even an error in one step can significantly affect the functionality of the final product. Even a "fatal defect" can lead to device failure. The goal of manufacturing processes is to improve the overall process yield. For example, to achieve a 75% yield in a 50-step process, each individual step must have a yield greater than 99.4%, and if the yield of each individual step is 95%, the overall process yield drops to 7%.

[0027] While high process yields are required in IC chip manufacturing, maintaining high wafer throughput (defined as the number of wafers processed per hour) is also essential. High process yields and high wafer throughput can be affected by the presence of defects, especially when operator intervention is required to inspect them. Therefore, high-throughput detection and identification of micron- and nanometer-scale defects using inspection tools such as charged particle beam inspection tools is necessary to maintain high yields and low costs. Inspecting wafers using electron beam inspection tools generates images of the wafer to measure IC structure dimensions. The measured dimensions can be compared to a reference structure free of defects to determine the presence of defects in the imaged structure. However, IC inspection for defect detection is typically a time-consuming process. Therefore, improving the throughput of IC inspection during manufacturing is desirable.

[0028] As mentioned above, high throughput is required for IC manufacturing with fewer structural defects. However, conventional imaging methods for the manufactured IC structure require acquiring pixels of uniform size. In chip design, especially for logic devices fabricated on wafers, the patterns or features of the devices are fabricated or distributed non-uniformly on the wafer. This can result in empty areas on the device. According to conventional imaging methods, imaging the manufactured IC structure may take too long on these empty areas, which may be useless in defect inspection or metrological analysis. Since the purpose of imaging is to identify defects associated with the manufactured features or patterns, this can lead to wasted time acquiring pixels in the empty areas of the device. Therefore, the throughput for device inspection and identification of defective IC structures is reduced. From a hardware perspective, current imaging methods and systems need to provide improved throughput, which is expensive and will increase manufacturing and potential operating costs. Therefore, acquiring images of the manufactured IC structure using current methods may be undesirably slow, and improved throughput is desired.

[0029] Embodiments of this disclosure provide a method for improving the imaging throughput of a charged particle beam apparatus. In some embodiments, images of a sample can be acquired by reducing the time spent scanning empty regions in a sample that are not useful for defect inspection or metrological analysis. In some embodiments, data associated with the field of view of the sample to be imaged can be evaluated before imaging to determine a first type of region and a second type of region (e.g., empty regions) on the sample. Smaller pixels may be associated with the first type of region, and larger pixels may be associated with the second type of region. In some embodiments, electrical signals may be associated with pixel size. In some embodiments, the electrical signal assigned to a smaller pixel is magnitude lower than the electrical signal assigned to a larger pixel. In some embodiments, a method is provided to group regions including features on the sample and empty regions on the sample, and to provide electrical signals to the charged particle beam apparatus to scan empty regions more quickly. In some embodiments, imaging throughput can be increased from about 50% to about 300%. Furthermore, some embodiments of this disclosure can increase the throughput of IC manufacturing. Some embodiments of this disclosure can provide a method for maintaining the desired defect inspection accuracy and yield of defect-free devices throughout high-volume manufacturing (HVM).

[0030] For clarity, the relative dimensions of components in the accompanying drawings may be enlarged. In the following description of the drawings, the same or similar reference numerals refer to the same or similar components or entities, and only differences with respect to the various embodiments are described. As used herein, unless specifically stated otherwise, the term "or" covers all possible combinations, unless impractical. For example, if it is stated that a database may include A or B, then unless specifically stated or impractical, the database may include A, or B, or A and B. As a second example, if it is stated that a database may include A, B, or C, then unless specifically stated or impractical, the database may include A, or B, or C, or A and B, or A and C, or B and C, or A and B and C.

[0031] Figure 1 An example electron beam inspection (EBI) system 100 according to an embodiment of this disclosure is shown. The EBI system 100 can be used for imaging. Figure 1As shown, the EBI system 100 includes a main chamber 101, a loading / locking chamber 102, a beam tool 104, and a device front-end module (EFEM) 106. The beam tool 104 is located within the main chamber 101. The EFEM 106 includes a first loading port 106a and a second loading port 106b. The EFEM 106 may include additional loading ports(s). The first loading port 106a and the second loading port 106b receive a wafer front-opening standard carrier cassette (FOUP) containing a wafer (e.g., a semiconductor wafer or a wafer made of(one or more) other materials) or a sample to be inspected (wafers and samples are interchangeable). A “lot” is a group of wafers that can be loaded as a batch for wafer processing.

[0032] One or more robotic arms (not shown) in EFEM 106 can transfer the wafer to loading / locking chamber 102. Loading / locking chamber 102 is connected to a loading / locking vacuum pump system (not shown), which removes gas molecules from loading / locking chamber 102 to achieve a first pressure below atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown) can transfer the wafer from loading / locking chamber 102 to main chamber 101. Main chamber 101 is connected to a main chamber vacuum pump system (not shown), which removes gas molecules from main chamber 101 to achieve a second pressure below the first pressure. After reaching the second pressure, the wafer is inspected by a beam tool 104. Beam tool 104 can be a single-beam system or a multi-beam system.

[0033] Controller 109 is electrically connected to clamping tool 104. Controller 109 may be a computer configured to perform various controls of EBI system 100. Although controller 109 is... Figure 1 The controller 109 is shown outside the structure including the main chamber 101, the loading / locking chamber 102 and the EFEM 106, but it should be understood that the controller 109 may be part of the structure.

[0034] In some embodiments, controller 109 may include one or more processors (not shown). A processor may be a general-purpose or special-purpose electronic device capable of manipulating or processing information. For example, a processor may include any number of central processing units (or “CPU”), graphics processing units (or “GPU”), optical processors, programmable logic controllers, microcontrollers, microprocessors, digital signal processors, intellectual property (IP) cores, programmable logic arrays (PLAs), programmable array logic (PALs), general-purpose array logic (GALs), complex programmable logic devices (CPLDs), field-programmable gate arrays (FPGAs), system-on-a-chip (SoCs), application-specific integrated circuits (ASICs), and any combination of any type of circuitry capable of data processing. A processor may also be a virtual processor, comprising one or more processors distributed across multiple machines or devices coupled via a network.

[0035] In some embodiments, controller 109 may also include one or more memories (not shown). Memory can be a general-purpose or special-purpose electronic device capable of storing code and data accessible by a processor (e.g., via a bus). For example, memory may include any number of random access memory (RAM), read-only memory (ROM), optical disc, magnetic disk, hard disk, solid-state drive, flash drive, secure digital card (SD card), memory stick, compressed flash memory (CF card), or any combination of any type of storage device. Code and data may include an operating system (OS) and one or more applications (or "applications") for a specific task. Memory may also be virtual memory, comprising one or more memories distributed across multiple machines or devices coupled via a network.

[0036] Now for reference Figure 2 , Figure 2 This is a schematic diagram illustrating an example imaging system 200 including an electron beam tool 104 and an image processing system 290 according to an embodiment of the present disclosure. Figure 2 As shown, the electron beam tool 104 may include a motorized stage 234 to support the sample 250 to be examined. The electron beam tool 104 may also include an objective lens 232, an electron detector 244 (which includes an electron sensor surface), a condenser lens 226, a coulomb aperture 224, a gun aperture 222, an anode 220, and a cathode 203, one or more of which may be aligned with the optical axis 201 of the electron beam tool 104. In some embodiments, the detector 244 may be arranged off-axis 201.

[0037] Objective 232 may include a modified oscillating objective decelerating immersion lens (SORIL), which may include objective body 232a and objective excitation coil 232b. A deflector or a set of deflectors 233 may be present within objective 232. Electron beam tool 104 may additionally include an energy-dispersive X-ray spectroscopy (EDS) detector (not shown) to characterize materials on the sample.

[0038] A primary electron beam 204 can be emitted from the cathode 203 by applying a voltage between the anode 220 and the cathode 203. The primary electron beam 204 can pass through a gun aperture 222 and a coulomb aperture 224, which determine the current entering the primary electron beam 204 via a condenser lens 226 located below the coulomb aperture 224. The condenser lens 226 can focus the primary electron beam 204 before it enters the current-limiting aperture 235, thus setting the current of the electron beam before it enters the objective lens 232. The set current of the primary electron beam 204 entering the objective lens 232 can be referred to as the probe current.

[0039] Objective lens 232 can focus primary electron beam 204 onto sample 250 for inspection and can form probe spot 240 on the surface of sample 250. One or more deflectors 233 can deflect primary electron beam 204 to scan probe spot 240 on sample 250. For example, during scanning, one or more deflectors 233 can be controlled to sequentially deflect primary electron beam 204 to different positions on the top surface of sample 250 at different time points to provide data for image reconstruction of different parts of sample 250. Furthermore, deflectors 233 can be controlled to deflect primary electron beam 204 to different sides of sample 250 at specific locations and at different time points to provide data for stereoscopic image reconstruction of the sample structure at that location.

[0040] When an electrical signal is applied to the objective lens excitation coil 232b, an axially symmetric (i.e., symmetric about the optical axis 201) magnetic field can be generated in the sample surface region. A portion of the sample 250 scanned by the primary electron beam 204 can be immersed in the magnetic field. Different voltages can be applied to the sample 250 to generate an axially symmetric decelerating electrostatic field near the sample surface. The electrostatic field can reduce the energy of the primary electron beam 204 impacting the sample surface before electrons from the electron beam collide with the sample 250.

[0041] Upon receiving the primary electron beam 204, secondary electrons 205 can be emitted from a portion of the sample 250. Although not in Figure 2As shown, but it should be understood, the primary electron beam 204 impacting sample 250 can also generate backscattered electrons or Auger electrons. Secondary electrons 205 can be received by the sensor surface of electron detector 244. In some embodiments, electron detector 244 can generate a signal (e.g., voltage, current, etc.) representing the intensity of the emitted secondary electrons 205, and can provide this signal to image processing system 290 communicating with electron detector 244. The intensity of the emitted secondary electrons 205 can vary depending on the external or internal structure of sample 250, and can therefore indicate whether sample 250 includes defects. Furthermore, as described above, the primary electron beam 204 can be projected onto different locations on the top surface of sample 250, or onto different sides of sample 250 at specific locations, to generate secondary electrons 205 of varying intensities. Therefore, by mapping the intensity of the emitted secondary electrons 205 to regions of sample 250, image processing system 290 can reconstruct an image reflecting features of the internal or external structure of sample 250.

[0042] Imaging system 200 may further include image processing system 290, which includes image acquisition unit 292, storage unit 294, and controller 109. Image acquisition unit 292 may include one or more processors. For example, image acquisition unit 292 may include a computer, server, mainframe, terminal, personal computer, any type of mobile computing device, or a combination thereof. Image acquisition unit 292 may be communicatively coupled to detector 244 of electron beam tool 104 via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, Internet, wireless network, radio, or a combination thereof. Image acquisition unit 292 may receive signals from detector 244 and may construct an image. Thus, image acquisition unit 292 may acquire an image of sample 250. Image acquisition unit 292 may also perform various post-processing functions, such as generating contours, overlaying indicators on the acquired image, etc. Image acquisition unit 292 may be configured to perform adjustments such as brightness and contrast of the acquired image. Storage unit 294 may be a storage medium such as a hard disk, flash drive, cloud storage, random access memory (RAM), or other types of computer-readable storage. The storage unit 294 can be coupled to the image acquisition unit 292 and can be used to save scanned raw image data as raw images and post-processed images. The image acquisition unit 292 and the storage unit 294 can be connected to the controller 109. The image acquisition unit 292, the storage unit 294, and the controller 109 can be integrated together as a single control unit.

[0043] Image acquisition unit 292 can acquire one or more images of a sample based on imaging signals received from detector 244. The imaging signals may correspond to scanning operations used for charged particle imaging. The acquired images may be a single image comprising multiple imaging regions. The single image may be stored in storage unit 294. The single image may be a raw image that can be divided into multiple regions. Each region may include an imaging region containing features of sample 250. The acquired images may include multiple images of a single imaging region of sample 250 sampled multiple times over a time series. Multiple images may be stored in storage unit 294. Image processing system 290 can be configured to perform image processing steps using multiple images of the same location of sample 250.

[0044] Image processing system 290 may include measurement circuitry (e.g., an analog-to-digital converter) to obtain the distribution of detected secondary electrons. Electron distribution data acquired during the detection time window, combined with corresponding scan path data of the primary electron beam 204 incident on the sample surface, can be used to reconstruct an image of the structure of the sample under examination. The reconstructed image can be used to reveal various features of the internal or external structure of sample 250, thereby revealing any defects that may be present in the sample.

[0045] Figure 3 A schematic diagram of an example multi-beam tool 104 (also referred to herein as apparatus 104) and an image processing system 390 according to an embodiment of the present disclosure is shown. The image processing system 390 can be configured for use with EBI system 100 ( Figure 1 )middle.

[0046] The beam tool 104 includes a charged particle source 302, a gun aperture 304, a condenser lens 306, a primary charged particle beam 310 emitted from the charged particle source 302, a source conversion unit 312, multiple sub-beams 314, 316, and 318 of the primary charged particle beam 310, a main projection optics system 320, a motorized wafer stage 380, a wafer support 382, ​​multiple secondary charged particle beams 336, 338, and 340, a secondary optics system 342, and a charged particle detection device 344. The main projection optics system 320 may include a beam splitter 322, a deflection scanning unit 326, and an objective lens 328. The charged particle detection device 344 may include detection sub-regions 346, 348, and 350.

[0047] The charged particle source 302, the gun aperture 304, the focusing lens 306, the source conversion unit 312, the beam splitter 322, the deflection scanning unit 326, and the objective lens 328 can be aligned with the main optical axis 360 of the device 204. The secondary optical system 342 and the charged particle detection device 344 can be aligned with the secondary optical axis 352 of the device 204.

[0048] Charged particle source 302 can emit one or more charged particles, such as electrons, protons, ions, molecules, or any other particles carrying a charge. In some embodiments, charged particle source 302 can be an electron source. For example, charged particle source 302 can include a cathode, extractor, or anode, wherein primary electrons can be emitted from the cathode and extracted or accelerated to form a primary charged particle beam 310 (in this case, a primary electron beam) having a cross (virtual or real) 308. For ease of explanation and without ambiguity, electrons are used as examples in some descriptions herein. However, it should be noted that any charged particle can be used in any embodiment of this disclosure, and is not limited to electrons. The primary charged particle beam 310 can be visualized as being emitted from the cross 308. The aperture 304 can block peripheral charged particles of the primary charged particle beam 310 to reduce the Coulomb effect. The Coulomb effect can cause an increase in the probe beam spot size.

[0049] The source conversion unit 312 may include an imaging element array and a beam-limiting aperture array. The imaging element array may include a micro-deflector or a microlens array. The imaging element array can form multiple parallel images (virtual or real images) at an intersection 308 with multiple sub-beams 314, 316, and 318 of the primary charged particle beam 310. The beam-limiting aperture array can limit the multiple sub-beams 314, 316, and 318. Although in Figure 3 Three sub-bundles 314, 316, and 318 are shown, but embodiments of this disclosure are not limited thereto. For example, in some embodiments, device 204 may be configured to generate a first number of sub-bundles. In some embodiments, the first number of sub-bundles may be in the range of 1 to 1000. In some embodiments, the first number of sub-bundles may be in the range of 200 to 500. In an exemplary embodiment, device 104 may generate 400 sub-bundles.

[0050] The focusing lens 306 can focus the primary charged particle beam 310. The currents of the sub-beams 314, 316, and 318 downstream of the source conversion unit 312 can be changed by adjusting the focusing capability of the condenser lens 306 or by changing the radial dimensions of the corresponding beam-limiting apertures within the beam-limiting aperture array. The objective lens 328 can focus the sub-beams 314, 316, and 318 onto the wafer 330 for imaging, and can form multiple probe beam spots 370, 372, and 374 on the surface of the wafer 330.

[0051] Beam splitter 322 can be a Wien filter type beam splitter that generates electrostatic dipole fields and magnetic dipole fields. In some embodiments, if they are applied, the force exerted by the electrostatic dipole field on the charged particles (e.g., electrons) of sub-beams 314, 316, and 318 on the sub-beams 314, 316, and 318 can be substantially equal in magnitude and opposite in direction to the force exerted by the magnetic dipole field on the charged particles. Therefore, sub-beams 314, 316, and 318 can pass directly through beam splitter 322 with a zero deflection angle. However, the total dispersion of sub-beams 314, 316, and 318 generated by beam splitter 322 can also be non-zero. Beam splitter 322 can separate secondary charged particle beams 336, 338, and 340 from sub-beams 314, 316, and 318 and guide secondary charged particle beams 336, 338, and 340 to secondary optical system 342.

[0052] The deflection scanning unit 326 can deflect sub-beams 314, 316, and 318 to scan probe beam spots 370, 372, and 374 over the surface regions of wafer 330. In response to the incident of sub-beams 314, 316, and 318 at probe beam spots 370, 372, and 374, secondary charged particle beams 336, 338, and 340 can be emitted from wafer 330. Secondary charged particle beams 336, 338, and 340 can include charged particles (e.g., electrons) with an energy distribution. For example, secondary charged particle beams 336, 338, and 340 can be secondary electron beams comprising secondary electrons (energy ≤ 50 eV) and backscattered electrons (energy between 50 eV and the landing energy of sub-beams 314, 316, and 318). The secondary optical system 342 can focus secondary charged particle beams 336, 338, and 340 onto detection sub-regions 346, 348, and 350 of the charged particle detection device 344. Detection sub-regions 346, 348, and 350 can be configured to detect the respective secondary charged particle beams 336, 338, and 340 and generate corresponding signals (e.g., voltage, current, etc.) for reconstructing SCPM images of structures above or below the surface regions of the wafer 330.

[0053] The generated signals can represent the intensity of the secondary charged particle beams 336, 338, and 340, and can be provided to the image processing system 390, which communicates with the charged particle detection device 344, the main projection optics system 320, and the motorized wafer stage 380. The moving speed of the motorized wafer stage 380 can be synchronized and coordinated with the beam deflection controlled by the deflection scanning unit 326, so that the movement of the scanning probe beams (e.g., scanning probe beams 370, 372, and 374) can orderly cover the region of interest on the wafer 330. Such synchronization and coordination parameters can be adjusted to accommodate different materials of the wafer 330. For example, different materials of the wafer 330 can have different resistivity-capacitance characteristics, which can generate different signal sensitivities to the movement of the scanning probe beams.

[0054] The intensities of the secondary charged particle beams 336, 338, and 340 can vary depending on the external or internal structure of the wafer 330, and thus can indicate whether the wafer 330 contains defects. Furthermore, as described above, sub-beams 314, 316, and 318 can be projected onto different locations on the top surface of the wafer 330, or onto different sides of a local structure of the wafer 330, to generate secondary charged particle beams 336, 338, and 340 with varying intensities. Therefore, by mapping the intensities of the secondary charged particle beams 336, 338, and 340 to regions of the wafer 330, the image processing system 390 can reconstruct an image reflecting the characteristics of the internal or external structure of the wafer 330.

[0055] In some embodiments, the image processing system 390 (which may be part of the controller 209) may include an image acquirer 392, a storage unit 394, and a controller 396. The image acquirer 392 may include one or more processors. For example, the image acquirer 392 may include a computer, server, mainframe, terminal, personal computer, any type of mobile computing device, or a combination thereof. The image acquirer 392 may be communicatively coupled to the charged particle detection device 344 of the beam tool 204 via a medium such as an electrical conductor, fiber optic cable, portable storage medium, IR, Bluetooth, the Internet, wireless network, radio, or a combination thereof. In some embodiments, the image acquirer 392 may receive signals from the charged particle detection device 344 and may construct an image. Thus, the image acquirer 392 may acquire an SCPM image of the wafer 330. The image acquirer 392 may also perform various post-processing functions, such as generating contours, overlaying indicators on the acquired image, etc. The image acquirer 392 may be configured to perform adjustments to the brightness and contrast of the acquired image. In some embodiments, storage device 394 may be a storage medium such as a hard disk, flash drive, cloud storage, random access memory (RAM), or other types of computer-readable storage. Storage device 394 may be coupled to image acquirer 392 and may be used to save scanned raw image data as raw images and post-processed images. Image acquirer 392 and storage device 394 may be connected to controller 396. In some embodiments, image acquirer 392, storage device 394, and controller 396 may be integrated together as a single control unit.

[0056] In some embodiments, the image acquisition unit 392 may acquire one or more SCPM images of the wafer based on imaging signals received from the charged particle detection device 344. The imaging signals may correspond to a scanning operation for performing charged particle imaging. The acquired image may be a single image comprising multiple imaging regions. The single image may be stored in the storage unit 394. The single image may be an original image that can be divided into multiple regions. Each region may include an imaging region containing features of the wafer 330. The acquired images may include multiple images of a single imaging region of the wafer 330 sampled multiple times over a time series. The multiple images may be stored in the storage unit 394. In some embodiments, the image processing system 390 may be configured to perform image processing steps using multiple images of the same location on the wafer 330.

[0057] In some embodiments, the image processing system 390 may include measurement circuitry (e.g., an analog-to-digital converter) to obtain the distribution of detected secondary charged particles (e.g., secondary electrons). Charged particle distribution data acquired during the detection time window, combined with corresponding scan path data of sub-beams 314, 316, and 318 incident on the wafer surface, can be used to reconstruct an image of the inspected wafer structure. The reconstructed image can be used to reveal various features of the internal or external structure of the wafer 330, thereby revealing any defects that may exist in the wafer.

[0058] In some embodiments, the charged particles can be electrons. When electrons from the primary charged particle beam 310 are projected onto the surface of wafer 330 (e.g., probe beam spots 370, 372, and 374), the electrons from the primary charged particle beam 310 can penetrate to a certain depth into the surface of wafer 330 and interact with the particles of wafer 330. Some electrons from the primary charged particle beam 310 can interact elastically with the material of wafer 330 (e.g., in the form of elastic scattering or collision) and can be reflected or bounced off the surface of wafer 330. Elastic interaction maintains the total kinetic energy of the interacting body (e.g., the electrons from the primary charged particle beam 310), wherein the kinetic energy of the interacting body is not converted into other forms of energy (e.g., thermal energy, electromagnetic energy, etc.). Such reflected electrons generated by elastic interaction can be called backscattered electrons (BSE). Some electrons from the primary charged particle beam 310 can interact inelastically with the material of wafer 330 (e.g., in the form of inelastic scattering or collision). Inelastic interactions cannot preserve the total kinetic energy of the interacting body; some or all of the kinetic energy is converted into other forms of energy. For example, through inelastic interactions, the kinetic energy of some electrons in the primary charged particle beam 310 can induce electronic excitation and transitions in the atoms of the material. Such inelastic interactions can also generate electrons leaving the surface of wafer 330, which can be called secondary electrons (SEs). The yield or emission rate of BSEs and SEs depends, for example, on the material being examined and the landing energy of the electrons in the primary charged particle beam 310 landing on the material surface. The electron energy of the primary charged particle beam 310 can be partially determined by its accelerating voltage (e.g., Figure 3 The accelerating voltage between the anode and cathode of the charged particle source 302 is imparted. The number of BSE and SE can be more or less (or even the same) than the injected electrons of the primary charged particle beam 310.

[0059] Images generated by SCPM can be used for defect inspection. For example, a generated image capturing a test device region of a wafer can be compared to a reference image capturing the same test device region. The reference image can be predetermined (e.g., through simulation) and does not include known defects. If the difference between the generated image and the reference image exceeds a tolerance level, a potential defect may be identified. As another example, SCPM can scan multiple regions of a wafer, each including test device regions designed to be identical, and generate multiple images capturing those manufactured test device regions. These multiple images can be compared to each other. If the difference between the multiple images exceeds a tolerance level, a potential defect may be identified.

[0060] While reference may be made to ICs in this disclosure, it should be understood that this disclosure is applicable to other possible applications or designs. For example, this disclosure can be applied to integrated optical systems, magnetic domain memories, liquid crystal display panels, thin-film magnetic heads, and other nanoscale structures. It should also be understood that the terms "die," "structure," and "IC structure" are used interchangeably in this disclosure.

[0061] Now for reference Figure 4A , Figure 4A This illustrates an embodiment of the present disclosure using a charged particle beam device (such as...) Figure 2 or Figure 3 A schematic diagram of various scan lines of an electron beam applied through the sample surface by a charged particle beam device (shown). Figure 4A The top-view field of view 401 of the sample is shown, in which the electron beam scans the field of view 401 as a scan line at time intervals. Deflectors (e.g., Figure 2 Deflector 233 or Figure 3 The deflection scanning unit 326 in the image can deflect the focused primary electron beam. It should be understood that "field of view" can be understood as representing the region of the sample to be imaged. The field of view can be any size suitable for imaging the sample region. In some embodiments, the field of view 401 can be 8000 × 8000 pixels. In some embodiments, the field of view 401 can be any number of pixels suitable for imaging the sample region. The field of view 401 can include the region of interest of the sample. It should be understood that... Figure 4AFor illustrative purposes, and the width, length, and number of scan lines 402, 403, and 404 are not limited thereto. After completing the first scan line 402, the electron beam can be repositioned to different positions as shown by trace 402_1, wherein the electron beam can then be rescanned on the sample as shown by scan line 403. Similarly, as shown by scan line 403_1, the electron beam can be repositioned and scanned a third time. During each scan, secondary electrons are emitted and acquired by a corresponding detector to generate a corresponding image of the sample scanned throughout the field of view 401. In some embodiments, the secondary electrons emitted and acquired by the detector can be used to generate an image for each scan line.

[0062] Now for reference Figure 4B , Figure 4B This is an example illustration showing how the electrical signal applied to a charged particle beam deflector varies with distance from the sample. Figure 4B The application to the deflector (e.g., Figure 2 Deflector 233 or Figure 3 The deflection scanning unit 326 in the sample deflects the electron beam at a voltage 405 at a distance 406. Conventionally, a voltage is applied to the electron beam at a constant rate to deflect (e.g., scan) the electron beam through the surface of the sample. Voltage region 407 may correspond to the first scan of the electron beam through the sample (e.g., ...). Figure 4A The first scan line 402 in the sample, and the voltage region 408 can correspond to the second scan of the electron beam passing through the sample (e.g., Figure 4A (Second scan line 403 in the image).

[0063] Now for reference Figure 5A and Figure 5B , Figure 5A and Figure 5B This is an example image of the manufacturing pattern of the collected sample. Figure 5A The field of view shown includes a pattern 501 for fabricating line layers on a device. Pattern 501 may include individual line features 502. Figure 5B The image shows a field of view including a pattern 503 for fabricating a contact aperture layer on a device. Pattern 503 may include individual contact aperture features 504. It should be understood that... Figure 5A and Figure 5B This is not an exhaustive list; other patterns and features can be considered. Figure 5A and Figure 5B Each contains a first type of region (e.g., region of interest) and a second type of region (e.g., open region). The first type of region may include features (e.g., Figure 5A Line feature 502 or Figure 5BThe second type of region can be an empty area on the sample, which does not provide useful information for defect inspection or metrological measurement. The second type of region quantifies the pattern manufactured on the sample (e.g., Figure 5A Pattern 501 or Figure 5B The measure of pattern 503 is called the pattern fill factor, which is the pattern area divided by the total area of ​​the sample. For example, a pattern fill factor of 40% means that 60% of the area on the sample is empty. This can be... Figure 5A Pattern 501 in the image is used to fabricate a line layer on the sample. Therefore, when acquiring an image of pattern 501, 60% of the imaging time can be allocated to imaging empty areas, which are useless for subsequent defect inspection or metrology. Additionally, patterns containing more isolation features (e.g., Figure 5B Pattern 503 can have a low pattern fill factor and therefore a large percentage of empty areas. For example, pattern 503 can have a pattern fill factor of about 5% to 10%. Therefore, the image of pattern 503 (with contact aperture feature 504) can spend 90% to 95% of the imaging time on the empty areas.

[0064] Now for reference Figure 6 , Figure 6 This is a flowchart of an example conventional method for imaging a sample using a charged particle beam device. The example conventional method can utilize e-beam inspection tools (e.g., Figure 2 104 or Figure 3 In step 604, an image of the sample is acquired. In step 601, the field of view of the sample is identified. The field of view can be any size necessary for analyzing the sample (e.g., analyzing the features of a pattern fabricated on the sample). The field of view can be at any scale, such as millimeters, micrometers, or nanometers. Figure 5A or Figure 5B As shown.

[0065] In step 602, a constant-rate electrical signal is applied to the deflector of the charged particle beam device. The charged particle beam device may be an e-beam tool (e.g., Figure 2 Tools 104 or Figure 3 (Tool 104 in the document). The electrical signal can be voltage or current. At a uniform rate (e.g., as... Figure 4B An electrical signal is applied to uniformly deflect a beam of charged particles (e.g., an electron beam) passing through the sample. Figure 4A As shown in the figure, it is possible to capture the emitted secondary electrons to generate an image using the detector described above.

[0066] In step 603, an image with a field of view having a constant and uniform pixel size is acquired and saved. Because the charged particle beam is uniformly deflected across the sample, the acquired image contains pixels of uniform size throughout. The acquired image can then be used for defect inspection or metrological measurements of the sample.

[0067] The purpose of imaging is to facilitate the inspection of the imaged sample to detect defects associated with the manufactured pattern or to perform metrological measurements on the manufactured pattern. Conventional imaging methods and systems acquire images with a constant, uniform pixel size within the field of view. Therefore, an equal amount of time is dedicated to scanning the region of interest and the open region. This can result in a significant amount of time being wasted on imaging the open regions of the sample, which do not provide relevant information for inspection or metrology, and reduces throughput.

[0068] Now for reference Figure 7A , Figure 7A This is an illustration of an example field of view of a sample with varying sample pixel sizes and correspondingly scanned according to an embodiment of the present disclosure. Figure 7A The field of view 701 of the sample is shown, within which the region of interest of the sample can be imaged. To acquire an image of field of view 701, an electron beam is scanned across field of view 701 at time intervals, as shown above. Figure 4A As described in [the document]. Deflector (e.g., Figure 2 Deflector 233 or Figure 3 The deflection scanning unit 326 in the image can deflect the focused primary electron beam through the sample surface in the field of view 701. Before the electron beam scans through the sample, pixels of a certain size can be assigned to regions within the field of view 701. For example, a first region to be scanned can be associated with a smaller pixel 702, and a second region to be scanned can be associated with a larger pixel 703. Electrical signals are applied to the charged particle beam device or optical imaging device at a rate based on pixel size. In some embodiments, the charged particle beam device is a single-beam tool (e.g., Figure 2 ) or multi-beam tools (e.g., Figure 3 In some embodiments, an electrical signal is applied to the deflector of the charged particle beam device (e.g., Figure 2 Deflector 233 or Figure 3(Deflection scanning unit 326). The applied electrical signal rate associated with the larger pixel 703 can cause the charged particle beam to scan the second region faster. The electrical signal associated with the larger pixel 703 can be applied to the deflector at a greater rate than the electrical signal associated with the smaller pixel 702. As shown by scan line 704, the charged particle beam can be scanned in the first region at the applied electrical signal rate associated with the smaller pixel 702. After completing scan line 704, the charged particle beam can be repositioned to the second region, as shown by trace 704_1. Then, as shown by scan line 705, the charged particle beam can be rescanned in the second region by the applied electrical signal rate associated with the larger pixel 703.

[0069] Now for reference Figure 7B , Figure 7B This is an illustration of an example graph of an electrical signal applied to a deflector over time at a rate associated with the pixel size, according to an embodiment of the present disclosure. Figure 7B The figure shows the time 707 applied to the deflector (e.g., Figure 2 Deflector 233 or Figure 3 The electrical signal 706 of the deflection scanning unit 326 is used to scan. Figure 7A The charged particle beams in scan lines 704 and 705. Scan lines 704 and 705 can each begin with the same starting electrical signal 706_1 applied to the deflector and end with the same ending electrical signal 706_2. Figure 7B The speeds 708 and 709 in the text correspond to respectively Figure 7A The electric velocity applied by the deflecting charged particle beams of scan lines 704 and 705. For each pixel to be scanned and imaged, the time amount is independent of the pixel size. For example, in... Figure 7A In this imaging setup, the time taken to scan one of the smaller pixels 702 and one of the larger pixels 703 is equal. The imaging device can scan each pixel at a specific data rate (e.g., 1 / 100 MHz per pixel). If the size of the pixel from the smaller pixel 702 is 1 nm and the length of the scan line 704 is 1000 nm, then the scan time is 1000 MHz. 1e -8 If the pixel size from the larger pixel 703 is 10 nm, and the length of the scan line 705 is 100 nm, then the scan time is 100. 1e -8 Therefore, compared to scanning with smaller pixels (e.g., Figure 7A Compared to the sample region associated with the smaller pixel 702, in the sample region associated with the larger pixel (e.g., ...), Figure 7A Scanning the charged particle beam over the sample region associated with the larger pixel (703) may take a shorter amount of time. (Return to reference) Figure 7BRate 708 indicates that the electrical signal 706 is applied at a lower rate (e.g., slope) compared to the electrical signal 706 applied at rate 709. Therefore, a larger pixel size can be used to scan the sample region more quickly. For a given pixel size, the rate of the applied electrical signal 706 is constant.

[0070] Now for reference Figure 8A , Figure 8A This is an illustration of an example design for perceptual dynamic analysis of the field of view of a sample according to an embodiment of the present disclosure. Figure 8AData associated with the field of view of the sample is shown. In some embodiments, the data associated with the field of view may be design data for a target pattern to be manufactured onto the sample. In some embodiments, the design data may be a reference file for the target pattern to be manufactured. In some embodiments, the design data may be a Graphical Design System (GDS) file. In some embodiments, the data associated with the field of view may be a golden image. It should be understood that a “golden image” can be understood as a configuration snapshot or compilation of an image representing an ideal sample. Other terms such as “baseline image,” “master image,” “clone image,” “golden image,” or related terms used to create a consistent, reliable baseline for an image or system configuration may be understood to be synonymous. The field of view of the target design pattern 801 may include a feature 802_1 of the target design pattern 801. In some embodiments, feature 802_1 may be a contact aperture. Embodiments of this disclosure may include specifying a first type region 803_1 and a second type region 804_1 for the target design pattern 801 within the field of view. The first type region 803_1 may include feature 802_1 and a buffer region surrounding feature 802_1. The second type region 804_1 may include an empty area of ​​the target design pattern 801, such that no features are included within the open region 804_1. The target design data may provide measurements or dimensions of feature 802_1 and the distance between a first feature (e.g., feature 802_1) and a second feature (e.g., feature 802_2). The buffer region may be sized based on the dimensions of the provided feature (e.g., feature 802_1). In some embodiments, the buffer region may have a dimension 805, which is the distance from the edge of the feature (e.g., feature 802_1) to the first type region (e.g., first type region 803_1). In some embodiments, the buffer region may have a dimension 805 ranging from 0.5 times to 2 times the dimension of the feature (e.g., feature 802_1). The distance between the first and second features may be in the x-direction, y-direction, or a combination thereof. This distance may be used to define a second type region (e.g., second type region 804_1) in which no features are included. In some embodiments, the distance between the feature and the edge of the field of view is used to define a second type of region (e.g., second type region 804_4). It should be understood that, although... Figure 8A Second-type regions (e.g., second-type regions 804_1 and 804_3) with different dimensions in a coordinate system (e.g., the XY axis) are shown, but embodiments of this disclosure are not limited thereto. For example, the first-type region and the second-type region may be the same or different in size or shape. In some embodiments, the first-type region and the second-type region may be squares, rectangles, triangles, hexagons, circles, or any other polygons, either individually or both.

[0071] The first and second type regions can be associated with pixel sizes used for subsequent imaging of the sample. Now refer to... Figure 8B It illustrates an example schematic diagram of dynamic pixel dimensions associated with a first type region and a second type region on a sample, according to an embodiment of the present disclosure. Figure 8B Focusing on features 802_1 and 802_2, first-type regions 803_1 and 803_2, and second-type region 804_1. Smaller pixel 806 can be associated with first-type regions 803_1 and 803_2, and larger pixel 807 can be associated with second-type region 804_1. It should be understood that... Figure 8B The pixels shown (e.g., smaller pixel 806 and larger pixel 807) can have different shapes. It should be further understood that the pixel shapes in some embodiments of this disclosure are not limited to these, and pixels can be the same shape or different shapes (e.g., square, rectangle, triangle, hexagon, circle, or any other polygon). Relative pixel sizes can be determined based on the field of view of the target design pattern. Relative pixel sizes can also be determined based on the fact that the acquired image will be used for defect inspection or metrological analysis. In some embodiments, the size of smaller pixel 806 can be approximately 1 nm to 5 nm. In some embodiments, for metrological analysis, the size of smaller pixel 806 can be approximately 1 nm to 2 nm. In some embodiments, for metrological analysis, the size of smaller pixel 806 can be approximately 1 nm. In some embodiments, for defect inspection, the size of smaller pixel 806 can be approximately 3 nm to 5 nm. In some embodiments, the size of larger pixel 807 can be approximately 10 nm to 100 nm. In some embodiments, smaller pixel 806 and larger pixel 807 can have sizes of any scale, such as nanometer scale, millimeter scale, or micrometer scale. It should be understood that pixel sizes in the field of view are not limited to those shown above. Figure 8B The two dimensions are shown. Any number of dimensions can be assigned to pixels in the first type region (e.g., first type region 803_1) and the second type region (e.g., second type region 804_1). It should also be understood that any number of region types can be contemplated in some embodiments of this disclosure. The number of region types can depend on the pattern design of the sample to be examined. The dimensions of pixels assigned to a region can depend on the field of view, the sample, or the pattern fill factor. The pixel dimensions associated with the first type regions 803_1 and 803_2 and the second type region 804_1 can be provided as input to the deflector of the charged particle beam device (e.g., Figure 2 104 or Figure 3 104 in the middle), to adjust the force applied to the deflector (e.g., Figure 2 Deflector 233 or Figure 3 The magnitude of the electrical signal of the deflection scanning unit 326 in the middle. Figure 8A and Figure 8B The embodiments shown and described herein can be powered by a computing device or processor (e.g., Figure 2 The processor 109 or Figure 3 The controller 396 in the controller performs this operation. In some embodiments, the pixel dimensions associated with the first type regions 803_1 and 803_2 and the second type region 804_1 may be provided as input to the optical imaging device. In some embodiments, the optical imaging device may be used for optical microscopy, spectroscopy, endoscopy, scanning laser ophthalmoscopy, laser Doppler imaging, optical coherence tomography, magnetic resonance imaging, X-ray imaging, photon emission, and any other imaging device that uses electromagnetic radiation.

[0072] The technical advantages of some embodiments of this disclosure (e.g., such as...) Figure 8B (As shown) can be a significant improvement in imaging throughput. For example, a sample with a field of view can have a 5% pattern fill factor. Smaller pixels (e.g., Figure 8B The smaller pixel (806) has a 4 nm size and is similar to the first type of region (e.g., Figure 8B The first type region 803_1) is associated, and larger pixels (e.g., Figure 8B The 12 nm size of the larger pixel (807) and the second type of region (e.g., Figure 8B Associated with the second type region 804_1, compared to acquiring an image with a uniform pixel size of 3 nm throughout the acquired image, it can promote a 300% improvement in imaging throughput. Furthermore, if larger sizes are assigned to larger pixels, imaging throughput can be further improved. For example, if larger pixels are assigned a size of 20 nm and smaller pixels are assigned a size of 3 nm, imaging throughput can be increased to 440%. In some embodiments of this disclosure, the pixel size can be determined based on the pattern fill factor of the sample to be manufactured or previously imaged. For example, if the pattern fill factor is about 40% (e.g., for samples containing such...),... Figure 5A As shown in the diagram (the pattern of the line features), an 80% improvement in imaging throughput can be achieved by assigning a size of 4 nm to the smaller pixels and a size of 12 nm to the larger pixels. Patterns with a lower pattern fill factor facilitate assigning larger sizes to larger pixels and thus contribute to a greater improvement in imaging throughput.

[0073] Now for reference Figure 8C , Figure 8C This is an example illustration of a charged particle beam scanning over a sample at a rate based on an electrical signal applied to a deflector of a charged particle beam apparatus to deflect the charged particle beam, according to an embodiment of the present disclosure. The charged particle beam 808 is... Figure 8CThe image shows a deflection from left to right on the surface of sample 809. Figure 8B In the diagram, hash marker 810 represents a smaller pixel size associated with the first type region 803_1, and interval 811 represents a larger pixel size associated with the second type region 804_1. Hash marker 810 corresponds to the first rate 812 of the electrical signal 813 applied to the deflector of the charged particle beam device, and interval 811 corresponds to the second rate 814 of the electrical signal 813 applied to the deflector. Because interval 811 and... Figure 8B The larger pixels in the array are associated with each other, so the second rate 814 of the electrical signal is greater in magnitude than the first rate 812 of the electrical signal. This allows the charged particle beam to scan the surface of the sample 809 more quickly. It should be understood that the charged particle beam scans each pixel (e.g., each hash mark in the hash mark group 810 and the interval 811) for the same duration 818. Therefore, the rate of the electrical signal applied to the deflector represents the speed at which the charged particle beam is deflected to scan the sample 809.

[0074] Figure 8C The following also illustrates electrical signals applied to a deflector according to an embodiment of the present disclosure to scan a second scan line over different regions in the field of view of sample 809. The second scan line can be deflected by applying an electrical signal 815 at a third rate, an electrical signal 816 at a fourth rate, and an electrical signal 817 at a fifth rate. The third rate of electrical signal 815 can correspond to a signal having a rate of... Figure 8B The larger pixels 807 in the image have different sizes than the larger pixels in the image. Therefore, the third rate of the electrical signal 815 can be different from the second rate 814. The fourth rate 816 can correspond to a larger pixel with a different size than the larger pixel 807 in the image. Figure 8B The smaller pixels 806 in the image are smaller pixels of different sizes. Therefore, the fourth rate 816 can be different from the first rate 812. The fifth rate 817 can correspond to smaller pixels of different sizes. Figure 8B The smaller pixel 806 is different in size from the smaller pixel associated with the third rate 815. Therefore, the fifth rate 817 may be different from the first rate 812 and the third rate 815. In some embodiments, the electrical signal applied to the deflector may include the same or different combinations of the rates of each scan line (e.g., the rates 812 and 814 of the first scan lines and the rates 815-817 of the second scan lines).

[0075] Now for reference Figure 9 , Figure 9 This is an example illustration of saving an image acquired at dynamically scaled pixel dimensions according to embodiments of the present disclosure. Some embodiments of the present disclosure may discard a second type of region of the field of view (e.g., Figure 8AThe image is stored using larger pixels associated with the second type region 804_1. Therefore, the stored image 901 of the pattern of interest may contain only pixels associated with the first type region 902 (e.g., Figure 8A The first type region 803_1 or 803_2) and the smaller pixels associated with the blank space 903. The saved image 901 can then be used for defect inspection or metrological measurement based on the image pattern of the saved smaller pixels. In some embodiments, the processor (e.g., Figure 2 The processor 109 or Figure 3 The controller 396 can interpolate smaller pixels from larger pixels associated with the imaged open region. The interpolated image 904 shows a preserved first-type region 902 containing smaller pixels and an interpolation portion 905, wherein the interpolation portion 905 contains smaller pixels, such as those in the preserved first-type region 902. The interpolation portion 905 can be associated with a second-type region (e.g., ...) of the imaged open region. Figure 8A The second type region 804_1 in the image is associated with this. In some embodiments, the interpolation method for generating the interpolated image 904 may include nearest neighbor interpolation, bilinear interpolation, bicubic interpolation, spline interpolation, Sink interpolation, anti-aliasing, or any other interpolation algorithm for pixel generation. In some embodiments, according to embodiments of this disclosure, the processor (e.g., Figure 2 The processor 109 or Figure 3 The controller 396 can compress the saved image 901 into a compressed image 906. In some embodiments, the compressed image 906 may not include blank spaces 903 as in the saved image 901. The processor can assign coordinate information to each smaller pixel in a first type region 902 in the saved image 901. In some embodiments, the compressed image 906 can provide a user with location information of an imaging pattern or feature of a sample. The coordinate information assigned to the first type region 902 can be mapped to coordinate information to identify the actual location of defects on the wafer. For example, the first type region 902 in the compressed image 906 may contain saved coordinate information that identifies the original coordinate information where the first type region 902 was originally located in the saved image 901. This allows the user to identify the original location of defects located in the first type region 902 in the compressed image 906 during inspection. In some embodiments, the coordinate information may be X, Y coordinate information, Euclidean coordinate information, radial coordinate information, or coordinate information from any other reference axis. Any one of the saved image 901, interpolated image 904, or compressed image 906 can be used for defect inspection or metrological measurement of the imaging pattern or feature.

[0076] Now for reference Figure 10 , Figure 10This is an example block diagram illustrating a system 1000 for improving imaging throughput according to an embodiment of the present disclosure. Figure 10 The modules in system 1000 can be accessed via Figure 1 or Figure 2 Controller 109 in Figure 3 Controller 396 in Figure 2 Image processing system 290 or Figure 3 The image processing system 390 is used in this application.

[0077] Design analysis module 1001 can analyze input data associated with the field of view of a sample to determine a first type of region and a second type of region on the sample. Input data can be obtained for a device to be manufactured onto the sample and is provided to design analysis module 1001. Input data can be design data. Design data can be a target design pattern obtained from a reference template (e.g., a GDS file). Input data can be an image of a target device processed according to wafer processing steps (e.g., etching, photolithography, etc.). The image can include metrological information available for the device after the wafer processing steps. Input data can be CD information. In some embodiments, input data can be a computer rendering of the target design or features of the device to be manufactured. In some embodiments, input data can be a gold image of the sample. In some embodiments, input data can be a previously acquired sample image. In some embodiments, input data can be a pattern fill factor. The first type of region can include the area where features of the target design pattern are located, and the second type of region can include empty areas. Design analysis module 1001 can measure the distance between features of the sample to determine the size and relative position of the first type of region and the second type of region. In some embodiments, user input can be provided to design analysis module 1001 to determine the size and relative position of the first type of region and the second type of region. Design analysis module 1001 can associate smaller pixels of a subsequent image with pixels located in a first type region, and larger pixels with pixels located in a second type region. The size of the specified pixels can be as described above. Design analysis module 1001 can determine an electrical signal associated with the associated pixel size to provide to charged particle beam device 1002. Design analysis module 1001 can provide the determined electrical signal to charged particle beam device 1002 to facilitate imaging of a device having a target design pattern or feature fabricated on a sample. Design analysis module 1001 can provide the determined electrical signal to an optical imaging device (e.g., as described above) to facilitate imaging of the sample. The design analysis module can be a processor (e.g., Figure 1 or Figure 2 Processor 109 in the middle, or Figure 3 (The controller 396) or computing device.

[0078] The charged particle beam device 1002 can be a single-beam or multi-beam charged particle beam device (e.g., Figure 2 or Figure 3 The data provided from the design analysis module 1001 can facilitate the charged particle beam device 1002 in scanning the sample with charged particle beams to acquire images. Images can be acquired by deflecting a single charged particle beam or by deflecting multiple charged particle beams based on the provided electrical signals. The charged particle beam device 1002 can scan the sample more quickly based on the data provided from the design analysis module 1001.

[0079] Image processor 1003 can acquire emitted secondary charged particles from a scanned sample and process images with dynamic pixel dimensions. Image processor 1003 can be an image processing system (e.g., Figure 2 Image processing system 290 or Figure 3 Image processing system 390). As described above, image processor 1003 can edit signals acquired from emitted secondary charged particles from a scanned sample and generate one or more images with smaller and larger pixel sizes. In some embodiments, image processor 1003 can discard images with a second type of region (e.g., Figure 9 The image processor 1003 may save the image based on the larger pixel size associated with the saved image 901. In some embodiments, the image processor 1003 may save coordinate information associated with one or more pixels. The image processor 1003 may save coordinate information associated with a smaller pixel size before discarding the larger pixel size associated with the second type region. In some embodiments, the image processor 1003 may save coordinate information associated with a smaller pixel size from the larger pixel size associated with the second type region (e.g., Figure 9 The image is saved by interpolating smaller pixels from larger pixels associated with the interpolated image (904). In some embodiments, the image processor 1003 can save the image by specifying coordinate information associated with the saved smaller pixels and compressing the image to extract smaller pixels from discarded larger pixels (e.g., ...). Figure 9 The image is saved by excluding any blank space in the compressed image (906). The image processor 1003 can perform defect inspection or metrological analysis on the saved image by analyzing smaller pixels or first-type regions.

[0080] Now for reference Figure 11 , Figure 11 This is an example flowchart illustrating a method 1100 for improving the imaging throughput of an imaging apparatus according to an embodiment of the present disclosure. The steps of method 1100 may be comprised of, for example... Figure 1 or Figure 2 processor 109 or Figure 3 Controller 396 Figure 2 Image processing system 290 or Figure 3The image processing system 390 is executed by a computing device. It should be understood that the illustrated method 1100 can be modified to change the order of steps and include additional steps.

[0081] In step 1101, data associated with the field of view of the sample is evaluated to determine a first type of region and a second type of region on the sample. The data associated with the field of view may be design data of the sample (e.g., a target pattern design or a GDS file). In some embodiments, the data associated with the field of view may be a gold image of the sample. In some embodiments, the data associated with the field of view may be a previously acquired image of the sample. In some embodiments, the data associated with the field of view may be a pattern fill factor. The first type of region may include features of the sample. The second type of region may be an empty region of the sample. An empty region may not include any features of the sample. The field of view may be at any scale (e.g., nanometer scale, millimeter scale, or micrometer scale). The field of view may include a pattern design, wherein the pattern includes features of a device fabricated or to be fabricated on the sample. In some embodiments, the features are integrated circuit line structures. In some embodiments, the features are contact apertures.

[0082] In step 1102, the first type region is associated with a first pixel size. The first type region can be associated with any number of pixels of the first pixel size.

[0083] In step 1103, the second type region is associated with a second pixel size. In some embodiments, the first type region may include a buffer region, wherein the buffer region may be associated with a first pixel size. In some embodiments, the first pixel size is smaller than the second pixel size. In some embodiments, the first pixel size and the second pixel size can be determined by evaluating data associated with the field of view of the sample. The data associated with the field of view may be a pattern fill factor. In some embodiments, the first pixel of the first size is smaller than the second pixel of the second size. This can be determined by an analysis module (e.g., Figure 10 The design analysis module 1001 analyzes the field of view to measure the distance between a first feature and a second feature on the sample, wherein a second type region can be designated as the distance between the first feature and the second feature. The first type region may also include a buffer surrounding the sample feature. The buffer may be approximately 0.5 times to approximately 2 times the feature size. In some embodiments, a smaller buffer may provide increased throughput. In some embodiments, a larger buffer may provide improved imaging accuracy of the sample feature. In some embodiments, dynamically sized pixels are assigned to the first type region and the second type region. In some embodiments, a smaller pixel is associated with the first type region and a larger pixel is associated with the second type region for subsequent imaging of the sample. Electrical signals are generated by the analysis module (e.g., Figure 10The design analysis module 1001 determines and associates the signal with the pixel size. In some embodiments, the electrical signal is a voltage. In some embodiments, the electrical signal is a current.

[0084] In step 1104, the scanning in the field of view is dynamically adjusted based on whether the scan is over a first type region associated with a first pixel size or over a second type region associated with a second pixel size. In some embodiments, an electrical signal of a first magnitude is applied based on whether the scan is over a first type region associated with a first pixel size, and an electrical signal of a second magnitude is applied based on whether the scan is over a second type region associated with a second pixel size. In some embodiments, the electrical signal is applied to a charged particle beam device or an optical imaging device. In some embodiments, the charged particle beam device is a single-beam tool (e.g., Figure 2 ) or multi-beam tools (e.g., Figure 3 In some embodiments, an electrical signal is applied to the deflector of the charged particle beam device (e.g., Figure 2 Deflector 233 or Figure 3 (Deflection scanning unit 326). In some embodiments, the electrical signal associated with a larger pixel size causes the charged particle beam to scan faster over the region type associated with the larger pixel size. In some embodiments, the electrical signal associated with a larger pixel size is applied to the deflector at a greater rate than the electrical signal associated with a smaller pixel size.

[0085] The beneficial effects provided by embodiments of this disclosure can be a method for improving the imaging throughput of a charged particle beam apparatus. In some embodiments, images of a sample can be acquired by reducing the time spent scanning empty regions in the sample that are ineffective for defect inspection or metrological analysis. In some embodiments, the target design pattern of the sample to be imaged can be analyzed before imaging to determine a first type of region and a second type of region (e.g., empty regions) of the sample. Smaller pixels can be associated with the first type of region, and larger pixels can be associated with the second type of region. In some embodiments, the electrical signal rate can be associated with the pixel size. In some embodiments, the electrical signal rate assigned to smaller pixels is magnitude lower than the electrical signal rate assigned to larger pixels. In some embodiments, a method is provided to group regions containing features on the sample and empty regions on the sample, and to provide electrical signals to the charged particle beam apparatus to scan empty regions more quickly. In some embodiments, imaging throughput can be increased from about 50% to about 300%. Furthermore, some embodiments of this disclosure can increase the throughput of IC manufacturing. Some embodiments of this disclosure can provide a method for maintaining defect inspection accuracy and yield of defect-free devices throughout HVM.

[0086] A non-transitory computer-readable medium may be provided, which can store information for use with charged particle beam tools (e.g., Figure 2 Charged particle beam tool 104 Figure 2 Single-beam charged particle beam tool 104, or Figure 3 Instructions from the processor of the multi-beam charged particle tool 104 are used to analyze data associated with the field of view of the sample, thereby determining a first type region and a second type region on the sample to be imaged, associating dynamic pixel sizes with the first type region and the second type region, and determining the electrical signals associated with the dynamic pixel sizes. Figure 11 Method 1100, and other executable functions relating to improving the imaging throughput of the imaging apparatus. Common forms of non-transitory media include, for example, floppy disks, flexible disks, hard disks, solid-state drives, magnetic tape or any other magnetic data storage media, optical disc read-only memory (CD-ROM), any other optical data storage media, any physical media with an aperture pattern, random access memory (RAM), programmable read-only memory (PROM) and erasable programmable read-only memory (EPROM), FLASH-EPROM or any other flash memory, non-volatile random access memory (NVRAM), cache memory, registers, any other memory chip or cartridge and its networking version.

[0087] These embodiments may be further described using the following terms: 1. A method for improving the throughput of an imaging apparatus, the method comprising: Evaluate data associated with the field of view of the sample to determine a first type of region and a second type of region on the sample; Associate the first type of region with the first pixel size; Associate the second type region with a second pixel size that is different from the first pixel size; and The scan in the field of view is dynamically adjusted based on whether the scan is over the first type region associated with the first pixel size or over the second type region associated with the second pixel size. 2. The method according to Clause 1, wherein the first type region includes features of the sample. 3. The method according to Clause 1 or 2, wherein the second type region is an empty region of the sample. 4. The method according to any one of clauses 1 to 3, wherein the data associated with the field of view of the sample is the design data of the sample. 5. The method according to Clause 4, wherein the design data of the sample is a target pattern design. 6. The method described in Clause 4 or 5, wherein the design data is a Graphical Design System (GDS) file. 7. The method according to any one of clauses 1 to 3, wherein the data associated with the field of view of the sample is a gold image of the sample. 8. The method according to any one of clauses 1 to 3, wherein the data associated with the field of view of the sample is a previously acquired image of the sample. 9. The method according to any one of clauses 1 to 8, wherein determining the first type region and the second type region comprises: The first type of region is specified to include the first feature and the second feature; The first type of region is specified to include a buffer region, the buffer region surrounding the first feature and the second feature; Measure the distance between the first feature and the second feature of the sample that are not covered by the first type of region; and The second type of region is defined as including the uncovered distance between the first feature and the second feature. 10. The method according to Clause 9, wherein the buffer region is approximately 0.5 times to approximately 2 times the first feature or the second feature. 11. The method according to clause 9 or 10, wherein the buffer region is associated with the first pixel size. 12. The method according to any one of clauses 1 to 11, wherein dynamically adjusting the scan in the field of view comprises: When the scan is performed over the first type region associated with the first pixel size, an electrical signal is applied at a rate of a first magnitude; and When the scan is performed over the second type region associated with the second pixel size, an electrical signal is applied at a rate of a second magnitude: 13. The method according to Clause 12, wherein the first value depends on the first pixel size, and the second value depends on the second pixel size. 14. The method according to Clause 13, wherein the first value is lower than the second value. 15. The method according to any one of clauses 12 to 14, wherein the electrical signal is a voltage. 16. The method according to any one of clauses 12 to 14, wherein the electrical signal is an electric current. 17. The method according to any one of clauses 1 to 16, wherein the first pixel size is smaller than the second pixel size. 18. The method according to any one of clauses 1 to 17, wherein the first pixel size and the second pixel size are determined by evaluating data associated with the field of view of the sample. 19. The method according to Clause 18, wherein the data associated with the field of view is a pattern fill factor. 20. The method according to any one of clauses 1 to 19 further includes acquiring an image of the field of view. 21. The method according to Clause 20, wherein acquiring the image of the field of view comprises: Discard a portion of the image corresponding to the second type region associated with the second pixel size; and Save a portion of the image corresponding to the first type region associated with the first pixel size. 22. The method according to Clause 20, wherein acquiring the image of the field of view comprises: Interpolated from pixels corresponding to a portion of the image of the second type of region associated with the second pixel size; and Save the interpolated pixels and a portion of the image corresponding to the first type region associated with the first pixel size. 23. The method according to any one of clauses 20 to 22, wherein acquiring the image of the field of view comprises: specifying coordinate information associated with the portion of the image corresponding to a first type region associated with a first pixel size and the portion of the image corresponding to a second type region associated with a second pixel size. 24. The method according to any one of clauses 20 to 23, wherein the acquired images are used for defect inspection of the sample. 25. The method according to any one of clauses 20 to 23, wherein the acquired images are used for acquiring metrological measurements. 26. The method according to any one of clauses 1 to 25, wherein for a charged particle beam device, the imaging throughput is improved. 27. The method according to Clause 26, wherein the charged particle beam device is a scanning electron microscope. 28. The method according to any one of clauses 1 to 25, wherein for an optical imaging device, the imaging throughput is improved. 29. A method for acquiring images using an imaging device, the method comprising: Evaluate data associated with the field of view of the sample to determine the region of interest, buffer region, and open region within the field of view; Associate the region of interest and the buffer region with the first pixel size; Associate the open region with a second pixel size that is different from the first pixel size; and The scanning over the field of view is dynamically adjusted based on whether the scan is over the region of interest or buffer region associated with the first pixel size or over the open region associated with the second pixel size. 30. The method according to Clause 29, wherein the region of interest includes features of the sample. 31. The method according to Clause 30, wherein the buffer region surrounds the features of the sample. 32. The method according to clause 30 or 31, wherein the buffer region is approximately 0.5 to approximately 2 times the feature of the sample. 33. The method according to any one of clauses 29 to 32, wherein the open region is an empty region of the sample. 34. The method according to any one of clauses 29 to 33, wherein the data associated with the field of view of the sample is the design data of the sample. 35. The method according to Clause 34, wherein the design data of the sample is a target pattern design. 36. The method described in accordance with Clause 34 or 35, wherein the design data is a Graphical Design System (GDS) file. 37. The method according to any one of clauses 29 to 33, wherein the data associated with the field of view of the sample is a gold image of the sample. 38. The method according to any one of clauses 29 to 33, wherein the data associated with the field of view of the sample is a previously acquired image of the sample. 39. The method according to any one of clauses 29 to 38, wherein the data associated with the field of view of the sample is a pattern fill factor. 40. The method according to any one of clauses 29 to 39, wherein determining the region of interest, the buffer region, and the open region comprises: Measure the distance between the first feature and the second feature of the sample; Specify the region of interest to include the first feature and the second feature; The buffer region is designated to surround the first feature and the second feature; and The open region is defined as including the distance between the first feature and the second feature, as well as the distance outside the buffer region. 41. The method according to any one of clauses 29 to 40, wherein dynamically adjusting the scan in the field of view comprises: When the scan is performed over the region of interest or the buffer region associated with the first pixel size, an electrical signal is applied at a rate of a first magnitude; and When the scan is performed over the open region associated with the second pixel size, an electrical signal is applied at a rate of a second magnitude. 42. The method according to Clause 40, wherein the first value depends on the first pixel size, and the second value depends on the second pixel size. 43. The method according to clause 42, wherein the first value is lower than the second value. 44. The method according to any one of clauses 41 to 43, wherein the electrical signal is a voltage. 45. The method according to any one of clauses 41 to 43, wherein the electrical signal is an electric current. 46. ​​The method according to any one of clauses 29 to 45, wherein the first pixel size is smaller than the second pixel size. 47. The method according to any one of clauses 29 to 46, wherein the first pixel size and the second pixel size are determined by evaluating data associated with the field of view of the sample. 48. The method according to Clause 47, wherein the data associated with the field of view of the sample is a pattern fill factor. 49. The method according to any one of clauses 29 to 48 further includes acquiring an image of the field of view. 50. The method according to clause 49, wherein acquiring the image of the field of view comprises: Discard a portion of the image corresponding to the open region associated with the second pixel size; and Save a portion of the image corresponding to the region of interest and the buffer region associated with the first pixel size. 51. The method according to clause 49, wherein acquiring the image of the field of view comprises: Interpolated from pixels of a portion of the image corresponding to a portion of the open region associated with the second pixel size; and Save the interpolated pixels and a portion of the image corresponding to the region of interest and the buffer region associated with the first pixel size. 52. The method according to any one of clauses 49 to 51, wherein acquiring the image of the field of view includes specified coordinate information, the coordinate information being associated with a portion of the image corresponding to the region of interest and the buffer region associated with the first pixel size and a portion of the graphic corresponding to the open region associated with the second pixel size. 53. The method according to any one of clauses 49 to 52, wherein the acquired images are used for defect inspection of the sample. 54. The method according to any one of clauses 49 to 52, wherein the acquired images are used for acquiring metrological measurements. 55. The method described in accordance with Clause 53 or 54, wherein the throughput of defect inspection or measurement is improved. 56. The method according to any one of clauses 29 to 55, wherein for a charged particle beam device, the imaging throughput is improved. 57. The method according to Clause 56, wherein the charged particle beam device is a scanning electron microscope. 58. The method according to any one of clauses 29 to 55, wherein for an optical imaging device, the imaging throughput is improved. 59. A non-transitory computer-readable medium comprising an instruction set executable by one or more processors of a computing device to cause the computing device to perform operations for improving the throughput of an imaging apparatus, the operations comprising: Evaluate data associated with the field of view of the sample to determine a first type of region and a second type of region on the sample; Associate the first type of region with the first pixel size; Associate the second type region with a second pixel size that is different from the first pixel size; and The scan in the field of view is dynamically adjusted based on whether the scan is over the first type region associated with the first pixel size or over the second type region associated with the second pixel size. 60. The non-transitory computer-readable medium as described in Clause 59, wherein the first type region includes features of the sample. 61. The non-transitory computer-readable medium according to clause 59 or 60, wherein the second type region is an empty region of the sample. 62. A non-transitory computer-readable medium according to any one of clauses 59 to 61, wherein the data associated with the field of view of the sample is design data of the sample. 63. A non-transitory computer-readable medium pursuant to Clause 62, wherein the design data of the sample is a target pattern design. 64. The non-transitory computer-readable medium as described in Clause 62 or 63, wherein the design data is a Graphical Design System (GDS) file. 65. A non-transitory computer-readable medium according to any one of clauses 59 to 61, wherein the data associated with the field of view of the sample is a gold image of the sample. 66. A non-transitory computer-readable medium according to any one of clauses 59 to 61, wherein the data associated with the field of view of the sample is a previously acquired image of the sample. 67. A non-transitory computer-readable medium according to any one of clauses 59 to 66, wherein the data associated with the field of view of the sample is a pattern fill factor. 68. A non-transitory computer-readable medium according to any one of clauses 59 to 67, wherein defining the first type region and the second type region includes: The first type of region is designated to include the first and second features of the sample; The first type of region is specified to include a buffer region, the buffer region surrounding the first feature and the second feature; Measure the distance between the first feature and the second feature of the sample that are not covered by the first type of region; and The second type of region is defined as including the uncovered distance between the first feature and the second feature. 69. A non-transitory computer-readable medium pursuant to Clause 68, wherein the buffer region is approximately 0.5 to approximately 2 times the size of the first feature or the second feature. 70. A non-transitory computer-readable medium pursuant to clauses 68 or 69, wherein the buffer region is associated with the first pixel size. 71. A non-transitory computer-readable medium according to any one of clauses 59 to 70, wherein dynamically adjusting the scan in the field of view comprises: When the scan is performed over the first type region associated with the first pixel size, an electrical signal is applied at a rate of a first magnitude; and When the scan is performed over the second type region associated with the second pixel size, an electrical signal is applied at a rate of a second magnitude. 72. A non-transitory computer-readable medium pursuant to Clause 71, wherein the first value is lower than the second value. 73. The non-transitory computer-readable medium as described in clause 71 or 72, wherein the electrical signal is a voltage. 74. The non-transitory computer-readable medium as described in clause 71 or 72, wherein the electrical signal is an electric current. 75. A non-transitory computer-readable medium according to any one of clauses 59 to 74, wherein the first pixel size and the second pixel size are determined by evaluating data associated with the field of view of the sample. 76. The non-transitory computer-readable medium as described in Clause 75, wherein the data associated with the field of view is a pattern fill factor. 77. The non-transitory computer-readable medium according to any one of clauses 59 to 76 further includes images of the field of view. 78. A non-transitory computer-readable medium pursuant to Clause 77, wherein the image of the field of view is acquired comprises: Discard a portion of the image corresponding to the second type region associated with the second pixel size; and Save a portion of the image corresponding to the first type region associated with the first pixel size. 79. A non-transitory computer-readable medium pursuant to Clause 77, wherein the image of the field of view is acquired comprises: Interpolated from pixels corresponding to a portion of the image of the second type of region associated with the second pixel size; and Save the interpolated pixels and a portion of the image corresponding to the first type region associated with the first pixel size. 80. A non-transitory computer-readable medium according to any one of clauses 77 to 79, wherein the image of the field of view includes specified coordinate information associated with the portion of the image corresponding to the first type region associated with the first pixel size and the portion of the image corresponding to the second type region associated with the second pixel size. 81. A non-transitory computer-readable medium according to any one of clauses 77 to 80, wherein the acquired images are used for defect inspection of the sample. 82. A non-transitory computer-readable medium according to any one of clauses 77 to 80, wherein the acquired images are used for acquiring metrological measurements. 83. The non-transitory computer-readable medium according to any one of clauses 59 to 82, wherein for a charged particle beam device, the imaging throughput is improved. 84. The non-transitory computer-readable medium as described in Clause 83, wherein the charged particle beam device is a scanning electron microscope. 85. The non-transitory computer-readable medium according to any one of clauses 59 to 82, wherein, for an optical imaging apparatus, imaging throughput is improved. 86. A non-transitory computer-readable medium comprising an instruction set executable by one or more processors of a computing device to cause the computing device to perform operations for an imaging apparatus to acquire images, the operations including: Evaluate data associated with the field of view of the sample to determine the region of interest, buffer region, and open region within the field of view; Associate the region of interest and the buffer region with the first pixel size; Associate the open region with a second pixel size that is different from the first pixel size; and The scanning over the field of view is dynamically adjusted based on whether the scan is over the region of interest or buffer region associated with the first pixel size or over the open region associated with the second pixel size. 87. The non-transitory computer-readable medium as described in Clause 86, wherein the region of interest includes features of the sample. 88. A non-transitory computer-readable medium pursuant to Clause 87, wherein the buffer region surrounds a feature of the sample. 89. A non-transitory computer-readable medium pursuant to clauses 86 or 87, wherein the buffer region is approximately 0.5 to approximately 2 times the feature of the sample. 90. A non-transitory computer-readable medium according to any one of clauses 86 to 89, wherein the open region is an empty region of the sample. 91. A non-transitory computer-readable medium according to any one of clauses 86 to 90, wherein the data associated with the field of view of the sample is design data of the sample. 92. The non-transitory computer-readable medium as described in Clause 91, wherein the design data of the sample is a target pattern design. 93. The non-transitory computer-readable medium as described in Clause 91 or 92, wherein the design data is a Graphical Design System (GDS) file. 94. A non-transitory computer-readable medium according to any one of clauses 86 to 90, wherein the data associated with the field of view of the sample is a gold image of the sample. 95. A non-transitory computer-readable medium according to any one of clauses 86 to 90, wherein the data associated with the field of view of the sample is a previously acquired image of the sample. 96. A non-transitory computer-readable medium according to any one of clauses 86 to 95, wherein the data associated with the field of view of the sample is a pattern fill factor. 97. A non-transitory computer-readable medium according to any one of clauses 86 to 96, wherein defining the region of interest, the buffer region, and the open region comprises: Measure the distance between the first feature and the second feature of the sample; The region of interest is specified to include the first feature and the second feature; The buffer region is designated to surround the first feature and the second feature; and The open region is defined as including the distance between the first feature and the second feature, as well as the distance outside the buffer region. 98. A non-transitory computer-readable medium according to any one of clauses 86 to 97, wherein dynamically adjusting the scan in the field of view comprises: When the scan is performed over the region of interest or the buffer region associated with the first pixel size, an electrical signal is applied at a rate of a first magnitude; and When the scan is performed over the open region associated with the second pixel size, an electrical signal is applied at a rate of a second magnitude. 99. The non-transitory computer-readable medium as described in Clause 98, wherein the first value depends on the first pixel size and the second value depends on the second pixel size. 100. A non-transitory computer-readable medium pursuant to Clause 99, wherein the first value is lower than the second value. 101. A non-transitory computer-readable medium pursuant to clauses 98 or 100, wherein the electrical signal is a voltage. 102. The non-transitory computer-readable medium as described in Clauses 98 to 100, wherein the electrical signal is an electric current. 103. A non-transitory computer-readable medium pursuant to any one of clauses 86 to 102, wherein the first pixel size is smaller than the second pixel size. 104. A non-transitory computer-readable medium according to any one of clauses 86 to 103, wherein the first pixel size and the second pixel size are determined by evaluating data associated with the field of view of the sample. 105. The non-transitory computer-readable medium as described in Clause 104, wherein the data associated with the field of view of the sample is a pattern fill factor. 106. The non-transitory computer-readable medium according to any one of clauses 86 to 105 further includes images of the field of view. 107. A non-transitory computer-readable medium pursuant to Clause 106, wherein the image of the field of view is acquired includes: Discard a portion of the image corresponding to the open region associated with the second pixel size; and Save a portion of the image corresponding to the region of interest and the buffer region associated with the first pixel size. 108. A non-transitory computer-readable medium pursuant to Clause 106, wherein the image of the field of view is acquired comprises: Interpolated from pixels of a portion of the image corresponding to a portion of the open region associated with the second pixel size; and Save the interpolated pixels and a portion of the image corresponding to the region of interest and the buffer region associated with the first pixel size. 109. A non-transitory computer-readable medium according to any one of clauses 106 to 108, wherein the image of the field of view includes specified coordinate information associated with portions of the image corresponding to the region of interest and the buffer region associated with the first pixel size and portions of the graphic corresponding to the open region associated with the second pixel size. 110. A non-transitory computer-readable medium according to any one of clauses 106 to 109, wherein the acquired images are used for defect inspection of the sample. 111. A non-transitory computer-readable medium according to any one of clauses 106 to 109, wherein the acquired images are used for acquiring metrological measurements. 112. A non-transitory computer-readable medium as described in Clause 110 or 111, wherein the throughput of defect inspection or measurement is improved. 113. The non-transitory computer-readable medium according to any one of clauses 86 to 112, wherein for a charged particle beam device, the imaging throughput is improved. 114. The non-transitory computer-readable medium as described in Clause 113, wherein the charged particle beam device is a scanning electron microscope. 115. A non-transitory computer-readable medium according to any one of clauses 86 to 112, wherein, for an optical imaging apparatus, imaging throughput is improved. 116. A system for improving imaging throughput, the system comprising: One or more processors, configured to execute instructions to cause the system to perform operations, the operations including: Evaluate data associated with the field of view of the sample to determine a first type of region and a second type of region on the sample; Associate the first type of region with the first pixel size; Associate the second type region with a second pixel size that is different from the first pixel size; and The scan in the field of view is dynamically adjusted based on whether the scan is over the first type region associated with the first pixel size or over the second type region associated with the second pixel size.

[0088] It should be understood that the embodiments of this disclosure are not limited to the exact constructions described above and illustrated in the accompanying drawings, and various modifications and changes can be made without departing from the scope of this disclosure. This disclosure has been described in conjunction with various embodiments, and other embodiments of this disclosure will be apparent to those skilled in the art upon consideration of the specification and practice of this disclosure herein. The specification and embodiments are intended to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the appended claims.

Claims

1. A non-transitory computer-readable medium comprising an instruction set executable by one or more processors of a computing device to cause the computing device to perform operations for improving the throughput of an imaging apparatus, the operations including: Evaluate data associated with the field of view of the sample to determine a first type of region and a second type of region on the sample; Associate the first type of region with the first pixel size; Associate the second type region with a second pixel size that is different from the first pixel size; as well as The scan over the field of view is dynamically adjusted based on whether the scan is over the first type region associated with the first pixel size or over the second type region associated with the second pixel size.

2. The non-transitory computer-readable medium of claim 1, wherein the first type region includes features of the sample.

3. The non-transitory computer-readable medium of claim 1, wherein the second type region is an empty region of the sample.

4. The non-transitory computer-readable medium of claim 1, wherein the data associated with the field of view of the sample is design data of the sample, a gold image of the sample, or a previously acquired image of the sample.

5. The non-transitory computer-readable medium of claim 4, wherein the design data of the sample is a target pattern design.

6. The non-transitory computer-readable medium of claim 1, wherein the data associated with the field of view of the sample is a pattern fill factor.

7. The non-transitory computer-readable medium of claim 1, wherein determining the first type region and the second type region comprises: The first type of region is designated to include the first and second features of the sample; The first type of region is specified to include a buffer region, the buffer region surrounding the first feature and the second feature; Measure the distance between the first feature and the second feature of the sample that are not covered by the first type of region; as well as The second type of region is defined as including the uncovered distance between the first feature and the second feature.

8. The non-transitory computer-readable medium of claim 1, wherein dynamically adjusting the scan over the field of view comprises: When the scan is performed over the first type region associated with the first pixel size, an electrical signal is applied at a rate of a first magnitude. as well as When the scan is performed over the second type region associated with the second pixel size, an electrical signal is applied at a rate of a second magnitude.

9. The non-transitory computer-readable medium of claim 8, wherein the first value is lower than the second value.

10. The non-transitory computer-readable medium of claim 1, wherein the first pixel size and the second pixel size are determined by evaluating data associated with the field of view of the sample.

11. The non-transitory computer-readable medium of claim 1, further comprising acquiring an image of the field of view.

12. The non-transitory computer-readable medium of claim 11, wherein acquiring the image of the field of view comprises: Discard a portion of the image corresponding to the second type region associated with the second pixel size; as well as Save a portion of the image corresponding to the first type region associated with the first pixel size.

13. The non-transitory computer-readable medium of claim 11, wherein acquiring the image of the field of view comprises: Interpolation is performed on pixels that correspond to a portion of the image representing the second type of region associated with the second pixel size; as well as Save the interpolated pixels and a portion of the image corresponding to the first type region associated with the first pixel size.

14. The non-transitory computer-readable medium of claim 11, wherein acquiring the image of the field of view comprises: Specify coordinate information, which is associated with the portion of the image corresponding to the first type region associated with the first pixel size and the portion of the image corresponding to the second type region associated with the second pixel size.

15. A system for improving imaging throughput, the system comprising: One or more processors, configured to execute instructions to cause the system to perform operations, the operations including: Evaluate data associated with the field of view of the sample to determine a first type of region and a second type of region on the sample; Associate the first type of region with the first pixel size; Associate the second type region with a second pixel size that is different from the first pixel size; and The scan over the field of view is dynamically adjusted based on whether the scan is over the first type region associated with the first pixel size or over the second type region associated with the second pixel size.

Images