Hafnium-based mpb high-k capacitor based on island-like metal layer and preparation method thereof

Abstract

This invention provides a hafnium-based MPB high-k capacitor based on island-shaped metal layers, its fabrication method, and a dynamic random access memory (DRAM). The method includes: providing a substrate; sequentially forming a lower electrode and a first hafnium-based MPB layer on the substrate; forming a discontinuous island-shaped metal structure on the first hafnium-based MPB layer; sequentially forming a second hafnium-based MPB layer and an upper electrode on the island-shaped metal structure; and performing rapid thermal annealing to crystallize the hafnium-based MPB material in the first and second hafnium-based MPB layers. By forming island-shaped metal layers to constitute a five-layer superlattice composite dielectric structure, active control of the MPB dielectric performance is achieved. This not only suppresses charged defects such as mobile oxygen vacancies in the MPB dielectric but also suppresses random phase transitions in the MPB dielectric caused by temperature or electric field changes, improving material parameter consistency, thereby stabilizing the dielectric response and improving temperature / bias stability. This solves the problem of how to fabricate reliable storage capacitors with high-k dielectric properties.

Description

Technical Field

[0001] This invention relates to the field of semiconductor device technology, and in particular to a hafnium-based MPB high-K capacitor based on an island-shaped metal layer, its fabrication method, and a dynamic random access memory. Background Technology

[0002] MPB (Morphotropic Phase Boundary) materials are smart materials with a unique phase boundary structure, named for their distinctive morphological phase transition properties. Under specific conditions, these materials exhibit a coexistence of two or more crystal structures, resulting in significant changes in their physical properties. Near the MPB region, the material typically exhibits extremely high piezoelectricity, dielectric constant, and electromechanical coupling coefficient. This is because the low energy barrier in the MPB region facilitates polarization rotation, thereby enhancing the response to external stresses or electric fields.

[0003] As DRAM technology nodes continue to shrink to below 10nm, the size of memory cell capacitors is decreasing dramatically. To maintain sufficient stored charge to prevent data loss, high-k dielectric materials with extremely high dielectric constants must be used. Hafnium-based (quasi-isomorphic phase boundary) MPB materials, represented by hafnium oxide doped with vanadium oxide, have become highly promising candidates due to their extremely high intrinsic dielectric constant (dielectric constant > 40) under certain compositions.

[0004] However, directly applying hafnium-based MPB materials to DRAM capacitors faces the following challenges: The extremely high K-value of MPB material stems from its structural instability, causing its capacitance to drift significantly with operating temperature and applied bias voltage, severely impacting the signal-to-noise ratio of the read signal and the memory window. Furthermore, MPB material contains numerous intrinsic defects, such as mobile oxygen vacancies, near the critical composition, thus affecting capacitor quality. In addition, the dielectric properties of MPB are extremely sensitive to film composition, thickness, and stress, increasing the difficulty of the manufacturing process. Summary of the Invention

[0005] The purpose of this invention is to provide a hafnium-based MPB high-k capacitor based on an island-shaped metal layer and its preparation method, as well as a dynamic random access memory, to solve the problem of how to prepare a reliable storage capacitor with high-k dielectric properties.

[0006] To address the aforementioned technical problems, this invention provides a method for fabricating a hafnium-based MPB high-k capacitor based on an island-shaped metal layer, comprising: Provide substrate; A lower electrode is formed on the substrate; A first hafnium-based MPB layer is formed on the lower electrode; An island-shaped metal layer is formed on the first hafnium-based MPB layer, the island-shaped metal layer comprising a plurality of discontinuous island-shaped metal structures; A second hafnium-based MPB layer is formed on the island-shaped metal layer; An upper electrode is formed on the second hafnium-based MPB layer; Rapid thermal annealing is performed to crystallize the hafnium-based MPB material in the first and second hafnium-based MPB layers.

[0007] Optionally, in the method for fabricating the hafnium-based MPB high-K capacitor based on the island-shaped metal layer, the material of the lower electrode is one or more of TiN, W, Ru, and Pt, and the thickness of the lower electrode is not less than 3 nm; the material of the upper electrode is one or more of TiN, W, Ru, and Pt, and the thickness of the upper electrode is not less than 3 nm.

[0008] Optionally, in the method for fabricating the hafnium-based MPB high-k capacitor based on the island-shaped metal layer, the method for forming the first hafnium-based MPB layer on the lower electrode includes: Hafnium-based MPB material was deposited using atomic layer deposition (ALD) to form the first hafnium-based MPB layer. The ALD temperature was 250°C to 350°C and the atmosphere was nitrogen.

[0009] Optionally, in the method for fabricating the hafnium-based MPB high-K capacitor based on the island-shaped metal layer, the first hafnium-based MPB layer is made of Al-doped HfO2, or a solid solution of HfO2 and ZrO2. x Zr 1-x O2, where x < 0.5; the thickness of the first hafnium-based MPB layer is 3 nm to 10 nm.

[0010] Optionally, in the method for fabricating the hafnium-based MPB high-K capacitor based on the island-shaped metal layer, the method for forming the island-shaped metal layer on the first hafnium-based MPB layer includes: A metal precursor is formed on the first hafnium-based MPB layer using atomic layer deposition or physical vapor deposition. Rapid thermal annealing or laser annealing is performed to dewetting and agglomerate the metal precursor, forming a discontinuous island-like metal structure, thus obtaining an island-like metal layer.

[0011] Optionally, in the method for preparing the hafnium-based MPB high-K capacitor based on the island-shaped metal layer, the metal precursor is made of metal, metal oxide, or metal nitride, and the thickness of the metal precursor is 0.2 nm to 1.5 nm.

[0012] Optionally, in the method for preparing the hafnium-based MPB high-K capacitor based on the island-shaped metal layer, the rapid thermal annealing temperature for forming the discontinuous island-shaped metal structure is 300℃~400℃, the time is 5s~120s, and the atmosphere is an oxygen-containing gas or an inert gas.

[0013] Optionally, in the method for fabricating the hafnium-based MPB high-k capacitor based on the island-shaped metal layer, the method for forming a second hafnium-based MPB layer on the island-shaped metal layer includes: Hafnium-based MPB material was deposited using atomic layer deposition (ALD) to form a second hafnium-based MPB layer. The ALD temperature was 250°C to 350°C and the atmosphere was nitrogen.

[0014] Optionally, in the method for fabricating the hafnium-based MPB high-K capacitor based on the island-shaped metal layer, the material of the second hafnium-based MPB layer is Al-doped HfO2, or a solid solution of HfO2 and ZrO2. x Zr 1-x O2, where x < 0.5; the thickness of the second hafnium-based MPB layer is 3 nm to 10 nm.

[0015] Optionally, in the method for preparing the hafnium-based MPB high-K capacitor based on the island-shaped metal layer, the rapid thermal annealing temperature for crystallizing the hafnium-based MPB material in the first and second hafnium-based MPB layers is 500℃~700℃, and the time is 30s~120s.

[0016] To address the aforementioned technical problems, the present invention also provides a hafnium-based MPB high-K capacitor based on an island-shaped metal layer, which is manufactured using the preparation method of a hafnium-based MPB high-K capacitor based on an island-shaped metal layer as described in any of the preceding claims. The hafnium-based MPB high-K capacitor based on an island-shaped metal layer includes a substrate, a lower electrode, a first hafnium-based MPB layer, an island-shaped metal layer, a second hafnium-based MPB layer, and an upper electrode arranged sequentially from bottom to top.

[0017] To address the aforementioned technical problems, the present invention also provides a dynamic random access memory, including the hafnium-based MPB high-K capacitor based on an island-shaped metal layer as described above.

[0018] This invention provides a hafnium-based MPB high-k capacitor based on island-shaped metal layers, its fabrication method, and a dynamic random access memory, comprising: providing a substrate; forming a lower electrode on the substrate; forming a first hafnium-based MPB layer on the lower electrode; forming an island-shaped metal layer on the first hafnium-based MPB layer, the island-shaped metal layer comprising multiple discontinuous island-shaped metal structures; forming a second hafnium-based MPB layer on the island-shaped metal layer; forming an upper electrode on the second hafnium-based MPB layer; and performing rapid thermal annealing to crystallize the hafnium-based MPB material in the first and second hafnium-based MPB layers. By forming island-shaped metal layers to constitute a five-layer superlattice composite dielectric structure, active control of MPB dielectric performance is achieved. This not only suppresses charged defects such as mobile oxygen vacancies in the MPB dielectric but also suppresses random phase transitions in the MPB dielectric caused by temperature or electric field changes, improving material parameter consistency, thereby stabilizing dielectric response and improving temperature / bias stability. This solves the problem of how to fabricate reliable storage capacitors with high-k dielectric properties. Attached Figure Description

[0019] Figure 1 This is a flowchart illustrating the fabrication method of the hafnium-based MPB high-K capacitor based on an island-shaped metal layer provided in this embodiment; Figures 2(A) to 2(G) are schematic diagrams of the capacitor structure in each step of the preparation method of the hafnium-based MPB high-K capacitor based on the island metal layer provided in this embodiment; Figure 3 This is a schematic diagram of the structure of the hafnium-based MPB high-K capacitor based on an island-shaped metal layer provided in this embodiment; The labels in the accompanying drawings are explained as follows: 100 - Substrate; 110 - Lower electrode; 120 - First hafnium-based MPB layer; 130 - Metal precursor; 140 - Island metal layer; 141 - Island metal structure; 150 - Second hafnium-based MPB layer; 160 - Upper electrode. Detailed Implementation

[0020] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, provides a further detailed account of the hafnium-based MPB high-K capacitor based on an island-shaped metal layer, its fabrication method, and the dynamic random access memory proposed in this invention. It should be noted that the drawings are all in a very simplified form and use non-precise scales, intended only to facilitate and clarify the illustration of the embodiments of the present invention. Furthermore, the structures shown in the drawings are often part of the actual structures. In particular, different figures may emphasize different aspects and sometimes use different scales.

[0021] It should be noted that the terms "first," "second," etc., used in the specification, claims, and drawings of this invention are used to distinguish similar objects in order to describe embodiments of the invention, and are not used to describe a specific order or sequence. It should be understood that such uses of terminology are interchangeable where appropriate. Furthermore, the terms "comprising" and "having," and any variations thereof, are intended to cover non-exclusive inclusion. For example, a process, method, system, product, or apparatus that comprises a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to such processes, methods, products, or apparatus.

[0022] This embodiment provides a method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer, such as... Figure 1 As shown, it includes: S1 provides the substrate; S2, forming the lower electrode on the substrate; S3, a first hafnium-based MPB layer is formed on the lower electrode; S4, an island-shaped metal layer is formed on the first hafnium-based MPB layer, the island-shaped metal layer comprising a plurality of discontinuous island-shaped metal structures; S5, a second hafnium-based MPB layer is formed on the island-shaped metal layer; S6, an upper electrode is formed on the second hafnium-based MPB layer; S7, rapid thermal annealing is performed to crystallize the hafnium-based MPB material in the first and second hafnium-based MPB layers.

[0023] The method for fabricating a hafnium-based MPB high-k capacitor based on island-shaped metal layers provided in this embodiment achieves active control over the performance of the MPB dielectric by forming a five-layer superlattice composite dielectric structure with island-shaped metal layers. This not only suppresses charged defects such as mobile oxygen vacancies in the MPB dielectric, but also suppresses random phase transitions in the MPB dielectric caused by temperature or electric field changes, improving the consistency of material parameters, thereby stabilizing the dielectric response and improving temperature / bias stability. This solves the problem of how to fabricate reliable storage capacitors with high-k dielectric properties.

[0024] The following uses a planar capacitor as an example to illustrate the specific implementation of the method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer provided in this embodiment.

[0025] Specifically, in this embodiment, step S1 involves providing a substrate.

[0026] In practical applications, as shown in Figure 2(A), a substrate 100 is provided. The substrate 100 can specifically be a silicon substrate, etc., and this application does not limit this. Furthermore, other structures and circuits can also be formed in the substrate 100, and this application also does not limit this.

[0027] Furthermore, in this embodiment, step S2 involves forming a lower electrode on the substrate.

[0028] In practical applications, as shown in Figure 2(B), a lower electrode 110 can be formed on the substrate 100 using processes such as atomic layer deposition. The material of the lower electrode 110 is one or more of TiN, W, Ru, and Pt, and the thickness of the lower electrode 110 is not less than 3 nm, for example, 10 nm.

[0029] The specific implementation process for forming the lower electrode 110 can use the existing process for forming the lower electrode of a capacitor, which will not be described in detail here.

[0030] Furthermore, in this embodiment, step S3 involves forming a first hafnium-based MPB layer on the lower electrode.

[0031] Specifically, in this embodiment, as shown in FIG2(C), an atomic layer deposition process is used to deposit hafnium-based MPB material on the lower electrode 110 to form a first hafnium-based MPB layer 120, wherein the atomic layer deposition temperature is 250℃~350℃ and the atmosphere is nitrogen.

[0032] In practical applications, the hafnium-based MPB material, i.e., the first hafnium-based MPB layer 120, can be made of Al-doped HfO2, or a solid solution of HfO2 and ZrO2. x Zr 1-x O2, where x < 0.5. The thickness of the first hafnium-based MPB layer 120 is 3 nm to 10 nm.

[0033] Furthermore, in this embodiment, in step S4, an island-shaped metal layer is formed on the first hafnium-based MPB layer, the island-shaped metal layer comprising a plurality of discontinuous island-shaped metal structures.

[0034] Specifically, in this embodiment, firstly, as shown in Figure 2(D), an atomic layer deposition (ALD) or physical vapor deposition (PVD) process is used to form a metal precursor 130 on the first hafnium-based MPB layer 120. In practical applications, the metal used for deposition can be materials such as Pt, Ru, or Ir. Using ALD or PVD, a metal precursor 130 with a sub-nanometer thickness is formed, for example, a thickness of 0.2 nm to 1.5 nm. Depending on the atmosphere used in the deposition process, the material of the formed metal precursor 130 can be a metal, a metal oxide, or a metal nitride.

[0035] Then, as shown in Figure 2(E), a rapid thermal annealing process is performed to dewetting and agglomerate the metal precursor 130, forming a discontinuous island-like metal structure 141, resulting in an island-like metal layer 140. In practical applications, the rapid thermal annealing temperature in this step is 300℃~400℃, the time is 5s~120s, and the atmosphere is an oxygen-containing gas or an inert gas. Of course, in other embodiments, laser annealing can be used instead of rapid thermal annealing.

[0036] Furthermore, in this embodiment, step S5 involves forming a second hafnium-based MPB layer on the island-shaped metal layer.

[0037] Specifically, in this embodiment, as shown in Figure 2(F), an atomic layer deposition process is used to deposit hafnium-based MPB material on the island-shaped metal layer 140 to form a second hafnium-based MPB layer 150, wherein the atomic layer deposition temperature is 250°C to 350°C and the atmosphere is nitrogen.

[0038] In practical applications, the hafnium-based MPB material, i.e., the second hafnium-based MPB layer 150, can be made of Al-doped HfO2, or a solid solution of HfO2 and ZrO2. x Zr 1-x O2, where x < 0.5. The thickness of the second hafnium-based MPB layer 150 is 3 nm to 10 nm.

[0039] Preferably, in order to simplify the process, reduce the process complexity, and improve the process yield and manufacturing efficiency, in this embodiment, the material and thickness of the second hafnium-based MPB layer 150 are the same as those of the first hafnium-based MPB layer 120, so that the second hafnium-based MPB layer 150 can be prepared using the manufacturing process adopted by the first hafnium-based MPB layer 120.

[0040] Furthermore, in this embodiment, step S6 involves forming an upper electrode on the second hafnium-based MPB layer.

[0041] Specifically, in this embodiment, as shown in FIG2(G), an upper electrode 160 can be formed on the second hafnium-based MPB layer 150 using processes such as atomic layer deposition. The upper electrode 160 is made of one or more of TiN, W, Ru, and Pt, and the thickness of the upper electrode 160 is not less than 3 nm, for example, 10 nm.

[0042] The specific process for forming the upper electrode 160 can use the existing process for forming the upper electrode of a capacitor, which will not be described in detail here.

[0043] Preferably, in order to simplify the process, reduce the process complexity, and improve the process yield and manufacturing efficiency, in this embodiment, the material and thickness of the upper electrode 160 are the same as those of the lower electrode 110, so that the upper electrode 160 can be prepared using the manufacturing process adopted by the lower electrode 110.

[0044] Furthermore, in this embodiment, step S7 involves performing rapid thermal annealing to crystallize the hafnium-based MPB material in the first and second hafnium-based MPB layers.

[0045] Specifically, in this embodiment, the rapid thermal annealing temperature is 500℃~700℃, and the time is 30s~120s, to ensure the crystallization of the hafnium-based MPB material in the first hafnium-based MPB layer 120 and the second hafnium-based MPB layer 150.

[0046] Of course, those skilled in the art can learn, based on the above-described planar capacitor fabrication method, how to manufacture capacitors with other structures such as three-dimensional columnar capacitors or three-dimensional trench capacitors using the hafnium-based MPB high-K capacitor fabrication method based on island metal layers provided in this application. This application will not elaborate further on this.

[0047] This embodiment provides a method for fabricating a hafnium-based MPB high-k capacitor based on an island-shaped metal layer. By fabricating discontinuous island-shaped metal structures as metal interlayers, the island-shaped metal structures can act as nanoscale trapping centers. Through chemical bonding and electrostatic interactions, they strongly pin mobile charged defects such as oxygen vacancies in the MPB dielectric, suppressing defect migration and aggregation under an electric field, thus improving the reliability of the capacitor. Simultaneously, multiple discontinuous island-shaped metal structures can form a distributed built-in electric field and stress anchor points within the MPB dielectric, thereby suppressing random phase transitions in the MPB dielectric due to temperature or electric field changes, improving material parameter consistency, and making the capacitance-voltage curve flatter. This ensures that the capacitance value remains highly stable within the DRAM operating voltage fluctuation range.

[0048] This embodiment also provides a hafnium-based MPB high-K capacitor based on an island-shaped metal layer, which is manufactured using the method described above for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer. Figure 3 As shown, the hafnium-based MPB high-K capacitor based on the island metal layer includes a substrate 100, a lower electrode 110, a first hafnium-based MPB layer 120, an island metal layer 140, a second hafnium-based MPB layer 150, and an upper electrode 160 arranged sequentially from bottom to top.

[0049] Specifically, in this embodiment, the lower electrode 110 is made of one or more of TiN, W, Ru, and Pt; the thickness of the lower electrode 110 is not less than 3 nm. The first hafnium-based MPB layer 120 is made of Al-doped HfO2, or a solid solution of HfO2 and ZrO2. x Zr 1-x O2, where x < 0.5; the thickness of the first hafnium-based MPB layer 120 is 3 nm to 10 nm. The island-shaped metal layer 140 is made of metal, metal oxide, or metal nitride. The second hafnium-based MPB layer 150 is made of Al-doped HfO2, or a solid solution of HfO2 and ZrO2. x Zr 1-x O2, where x < 0.5; the thickness of the second hafnium-based MPB layer 150 is 3 nm to 10 nm. The upper electrode 160 is made of one or more of TiN, W, Ru, and Pt, and the thickness of the upper electrode 160 is not less than 3 nm.

[0050] Preferably, in this embodiment, the material and thickness of the lower electrode 110 are the same as those of the upper electrode 160. The material and thickness of the first hafnium-based MPB layer 120 are the same as those of the second hafnium-based MPB layer 150.

[0051] Furthermore, this embodiment also provides a dynamic random access memory, including the hafnium-based MPB high-K capacitor based on the island metal layer as described above.

[0052] It should be noted that the various embodiments in this specification are described in a progressive manner, with each embodiment focusing on the differences from other embodiments. Similar or identical parts between embodiments can be referred to mutually. In addition, different parts between embodiments can also be combined with each other, and this invention does not limit this.

[0053] This embodiment provides a hafnium-based MPB high-k capacitor based on island-shaped metal layers, its fabrication method, and a dynamic random access memory, comprising: providing a substrate; forming a lower electrode on the substrate; forming a first hafnium-based MPB layer on the lower electrode; forming an island-shaped metal layer on the first hafnium-based MPB layer, the island-shaped metal layer comprising multiple discontinuous island-shaped metal structures; forming a second hafnium-based MPB layer on the island-shaped metal layer; forming an upper electrode on the second hafnium-based MPB layer; and performing rapid thermal annealing to crystallize the hafnium-based MPB material in the first and second hafnium-based MPB layers. By forming island-shaped metal layers to constitute a five-layer superlattice composite dielectric structure, active control of MPB dielectric performance is achieved. This not only suppresses charged defects such as mobile oxygen vacancies in the MPB dielectric but also suppresses random phase transitions in the MPB dielectric caused by temperature or electric field changes, improving material parameter consistency, thereby stabilizing dielectric response and improving temperature / bias stability. This solves the problem of how to fabricate reliable storage capacitors with high-k dielectric properties.

[0054] The above description is merely a description of preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way. Any changes or modifications made by those skilled in the art based on the above disclosure shall fall within the protection scope of the claims.

Claims

1. A method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer, characterized in that, include: Provide substrate; A lower electrode is formed on the substrate; A first hafnium-based MPB layer is formed on the lower electrode; An island-shaped metal layer is formed on the first hafnium-based MPB layer, the island-shaped metal layer comprising a plurality of discontinuous island-shaped metal structures; A second hafnium-based MPB layer is formed on the island-shaped metal layer; An upper electrode is formed on the second hafnium-based MPB layer; Rapid thermal annealing is performed to crystallize the hafnium-based MPB material in the first and second hafnium-based MPB layers.

2. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 1, characterized in that, The lower electrode is made of one or more of TiN, W, Ru, and Pt, and its thickness is not less than 3 nm; the upper electrode is made of one or more of TiN, W, Ru, and Pt, and its thickness is not less than 3 nm.

3. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 1, characterized in that, The method for forming a first hafnium-based MPB layer on the lower electrode includes: Hafnium-based MPB material was deposited using atomic layer deposition (ALD) to form the first hafnium-based MPB layer. The ALD temperature was 250°C to 350°C and the atmosphere was nitrogen.

4. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 1, characterized in that, The first hafnium-based MPB layer is made of Al-doped HfO2, or a solid solution of HfO2 and ZrO2. x Zr 1-x O2, where x < 0.5; the thickness of the first hafnium-based MPB layer is 3 nm to 10 nm.

5. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 1, characterized in that, The method for forming an island-shaped metal layer on the first hafnium-based MPB layer includes: A metal precursor is formed on the first hafnium-based MPB layer using atomic layer deposition or physical vapor deposition. Rapid thermal annealing or laser annealing is performed to dewetting and agglomerate the metal precursor, forming a discontinuous island-like metal structure, thus obtaining an island-like metal layer.

6. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 5, characterized in that, The metal precursor is made of metal, metal oxide, or metal nitride, and the thickness of the metal precursor is 0.2 nm to 1.5 nm.

7. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 5, characterized in that, The rapid thermal annealing used to form discontinuous island-like metal structures is performed at a temperature of 300℃~400℃ for 5s~120s in an atmosphere containing oxygen or an inert gas.

8. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 1, characterized in that, The method for forming a second hafnium-based MPB layer on an island-shaped metal layer includes: Hafnium-based MPB material was deposited using atomic layer deposition (ALD) to form a second hafnium-based MPB layer. The ALD temperature was 250°C to 350°C and the atmosphere was nitrogen.

9. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 1, characterized in that, The second hafnium-based MPB layer is made of Al-doped HfO2, or a solid solution of HfO2 and ZrO2. x Zr 1-x O2, where x < 0.5; the thickness of the second hafnium-based MPB layer is 3 nm to 10 nm.

10. The method for fabricating a hafnium-based MPB high-K capacitor based on an island-shaped metal layer according to claim 1, characterized in that, The rapid thermal annealing temperature for crystallizing the hafnium-based MPB material in the first and second hafnium-based MPB layers is 500℃~700℃, and the time is 30s~120s.

11. A hafnium-based MPB high-K capacitor based on an island-shaped metal layer, manufactured using the method for preparing a hafnium-based MPB high-K capacitor based on an island-shaped metal layer as described in any one of claims 1 to 10, characterized in that... The hafnium-based MPB high-K capacitor based on an island metal layer includes, from bottom to top, a substrate, a lower electrode, a first hafnium-based MPB layer, an island metal layer, a second hafnium-based MPB layer, and an upper electrode.

12. A dynamic random access memory, characterized in that, Including the hafnium-based MPB high-K capacitor based on an island-shaped metal layer as described in claim 11.

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