Display panel and display device

Abstract

This application relates to a display panel and display device, including a substrate; a light-emitting device disposed on one side of the substrate; and an encapsulation structure disposed on the side of the light-emitting device away from the substrate. The encapsulation structure includes a first encapsulation layer, a second encapsulation layer, and a third encapsulation layer stacked together. At least one of the first and third encapsulation layers includes at least one combined film layer, which includes a first film layer and a second film layer. In the same combined film layer, the first film layer is located on the side of the second film layer away from the light-emitting device. The refractive index of the first film layer is less than that of the second film layer, and the thickness of the first film layer is less than that of the second film layer. In this application, when the light emitted by the light-emitting device undergoes total internal reflection at the interface between the second and first film layers, its electromagnetic field penetrates into the first film layer in the form of an evanescent wave. Because the thickness of the first film layer is designed to be sufficiently thin, the evanescent wave can penetrate the first film layer, thereby disrupting the conditions for total internal reflection.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to display panels and display devices. Background Technology

[0002] Organic light-emitting diodes (OLEDs) are widely used in high-end display fields due to their excellent characteristics such as self-illumination, high contrast, and flexibility. However, the organic functional layer and cathode material in OLED devices are extremely sensitive to water and oxygen in the environment. Once corroded, they will cause dark spots and black spots, which will seriously affect the lifespan of the device and the display effect. Therefore, a high-barrier thin film encapsulation (TFE) layer is usually formed on the surface of OLED devices to prevent water and oxygen penetration.

[0003] However, when the light emitted by the OLED device passes through the aforementioned encapsulation structure, due to the difference in refractive index between the encapsulation layer material and the functional layer material, some of the light will undergo total internal reflection at the interface and be trapped inside the device, forming waveguide mode loss, which leads to a decrease in the light extraction efficiency of the device. Summary of the Invention

[0004] Therefore, it is necessary to provide a display panel and display device to address the problem that the difference in refractive index between the encapsulation layer material and the functional layer material causes some light to undergo total internal reflection at the interface, resulting in a decrease in the light extraction efficiency of the device.

[0005] In a first aspect, embodiments of this application provide a display panel, the display panel comprising:

[0006] substrate;

[0007] A light-emitting device is disposed on one side of the substrate;

[0008] An encapsulation structure is disposed on the side of the light-emitting device away from the substrate, and the encapsulation structure includes a first encapsulation layer, a second encapsulation layer and a third encapsulation layer stacked together.

[0009] Wherein, at least one of the first encapsulation layer and the third encapsulation layer includes at least one combined film layer, the combined film layer including a first film layer and a second film layer; in the same combined film layer, the first film layer is located on the side of the second film layer away from the light-emitting device, the refractive index of the first film layer is less than the refractive index of the second film layer, the thickness of the first film layer is less than the thickness of the second film layer, and the etching rate of the first film layer is greater than the etching rate of the second film layer.

[0010] In one embodiment, the thickness of the first film layer is less than or equal to the penetration depth of the evanescent wave generated by total internal reflection at the interface between the first film layer and the second film layer;

[0011] Preferably, the thickness of the first film layer is less than 1 / 4 of the wavelength of the light emitted by the light-emitting device;

[0012] Preferably, the light-emitting device is one of a first-color light-emitting device, a second-color light-emitting device, and a third-color light-emitting device, and the light emitted by the first-color light-emitting device, the second-color light-emitting device, and the third-color light-emitting device are all of different wavelengths; the first film layer includes an adjacent first sub-layer, a second sub-layer, and a third sub-layer, the first sub-layer, the second sub-layer, and the third sub-layer respectively corresponding to light-emitting devices of different colors, and the thicknesses of the first sub-layer, the second sub-layer, and the third sub-layer are all different.

[0013] In one embodiment, the first encapsulation layer includes at least one of the combined film layers, and the third encapsulation layer includes at least one of the combined film layers;

[0014] Preferably, the first encapsulation layer includes one of the combined film layers, and the third encapsulation layer includes one of the combined film layers;

[0015] Preferably, the thickness of the first film layer in the first encapsulation layer is less than the thickness of the first film layer in the third encapsulation layer;

[0016] Preferably, the refractive index of the first film layer in the first encapsulation layer is greater than the refractive index of the first film layer in the third encapsulation layer;

[0017] Preferably, the thickness of the second film layer in the first encapsulation layer is greater than the thickness of the second film layer in the third encapsulation layer;

[0018] Preferably, the refractive index of the second film layer in the first encapsulation layer is equal to the refractive index of the second film layer in the third encapsulation layer;

[0019] Preferably, the first encapsulation layer comprises multiple layers of the combined film, wherein all the first film layers have the same thickness and refractive index, and all the second film layers have the same thickness and refractive index;

[0020] Preferably, the third encapsulation layer comprises multiple layers of the combined film, wherein all the first film layers have the same thickness and refractive index, and all the second film layers have the same thickness and refractive index.

[0021] In one embodiment, the refractive index of the first film layer is 1.3 to 1.6, the refractive index of the second film layer is 1.7 to 2.1, and the refractive index of the second encapsulation layer is 1.45 to 1.65.

[0022] Preferably, the refractive index of the first film layer is 1.4 to 1.5, and the refractive index of the second film layer is 1.8 to 1.9.

[0023] In one embodiment, the material of the first film layer includes at least one of silicon oxide, silicon nitride, metal fluoride, and metal oxide;

[0024] Preferably, the first film layer is a silicon nitride oxide layer, wherein the ratio of silicon to oxygen in the silicon nitride oxide layer is 5:1 to 1:3;

[0025] Preferably, the ratio of silicon to oxygen in the silicon nitride is 1:1;

[0026] Preferably, the ratio of silicon to oxygen in the silicon nitride is 1:3;

[0027] Preferably, the first film layer is a silicon oxide layer;

[0028] Preferably, the first film layer in the first encapsulation layer is a silicon oxide nitride layer, and the first film layer in the third encapsulation layer is a silicon oxide layer.

[0029] In one embodiment, the material of the second film layer includes at least one of silicon nitride, silicon oxide nitride, and metal oxide; the material of the second encapsulation layer includes an organic polymer.

[0030] Preferably, the second film layer is a silicon nitride layer.

[0031] In one embodiment, the thickness of the first film layer is 10 nm to 200 nm, the thickness of the second film layer is 100 nm to 2000 nm, and the thickness of the second encapsulation layer is 10000 nm to 15000 nm.

[0032] Preferably, the thickness of the first film layer is 30 nm to 100 nm, and the thickness of the second film layer is 800 nm to 1000 nm.

[0033] In one embodiment, the first encapsulation layer is located on the side of the second encapsulation layer facing the light-emitting device;

[0034] The encapsulation structure includes a third film layer located on the side of the first encapsulation layer facing the light-emitting device; the refractive index of the third film layer is less than the refractive index of the second film layer in the first encapsulation layer, and the thickness of the third film layer is less than the thickness of the second film layer in the first encapsulation layer;

[0035] Preferably, the thickness of the third film layer is less than, equal to, or greater than the thickness of the first film layer in the first encapsulation layer;

[0036] Preferably, the refractive index of the third film layer is 1.3 to 1.6;

[0037] Preferably, the material of the third film layer includes at least one of silicon oxide, silicon nitride, metal fluoride, and metal oxide;

[0038] Preferably, the second encapsulation layer is constructed as an organic material layer, the thickness of the second encapsulation layer is 10000 nm to 14000 nm, and the refractive index of the second encapsulation layer is 1.45 to 1.6.

[0039] In one embodiment, the display panel further includes an auxiliary layer disposed between the light-emitting device and the encapsulation structure; the refractive index of the auxiliary layer is greater than the refractive index of the third film layer.

[0040] Secondly, embodiments of this application provide a display device, including a display panel as described in the first aspect.

[0041] The aforementioned display panel and display device, by incorporating a combined film layer comprising a first film layer and a second film layer within the encapsulation structure, wherein the first film layer is a low-refractive-index layer and the second film layer is a high-refractive-index layer, with the low-refractive-index first film layer disposed on the light-emitting side of the high-refractive-index second film layer, and by making the low-refractive-index first film layer ultra-thin, when the light emitted by the light-emitting device undergoes total internal reflection at the interface between the second film layer and the first film layer, its electromagnetic field penetrates into the first film layer in the form of an evanescent wave. Because the thickness of the first film layer is designed to be sufficiently thin, the evanescent wave can penetrate the first film layer, thereby disrupting the conditions for total internal reflection. Therefore, light that would otherwise be confined inside the display panel by total internal reflection can be effectively emitted, which is beneficial for improving the light extraction efficiency of the display panel.

[0042] Furthermore, this embodiment achieves improved light extraction efficiency through a simple multilayer film structure design, without the need to introduce complex nanostructures or microlens arrays, making the process relatively simple. Attached Figure Description

[0043] Figure 1 This is a schematic diagram of the structure of a display panel for related technologies.

[0044] Figure 2 This is a cross-sectional schematic diagram of a display panel provided according to some embodiments of this application.

[0045] Figure 3 This is a schematic diagram illustrating the principle of the output optical path in a display panel according to some embodiments of this application.

[0046] Figure 4 This is a cross-sectional schematic diagram of another display panel provided according to some embodiments of this application.

[0047] Figure 5 This is a cross-sectional schematic diagram of another display panel provided according to some embodiments of this application.

[0048] Figure 6 This is a schematic diagram comparing the current efficiency of blue light in a display panel provided according to some embodiments of this application with that in related technologies.

[0049] Figure 7 This is a schematic diagram comparing the current efficiency of green light in a display panel provided according to some embodiments of this application with that in related technologies.

[0050] Figure 8 This is a schematic diagram comparing the current efficiency of red light in a display panel provided according to some embodiments of this application with that in related technologies.

[0051] Figure 9 This is a schematic diagram of the structure of a display device provided according to some embodiments of this application.

[0052] Icon labels:

[0053] 10. Display panel; 100. Substrate; 200. Light-emitting device; 300. Auxiliary layer; 41. First layer; 42. Second layer; 43. Third layer;

[0054] 500, Packaging structure; 510, First packaging layer; 520, Second packaging layer; 530, Third packaging layer; 501, First film layer; 502, Second film layer;

[0055] 600, Third film layer;

[0056] 20. Display device. Detailed Implementation

[0057] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0058] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0059] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0060] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0061] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.

[0062] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.

[0063] As mentioned in the background section, current thin-film encapsulation technologies primarily employ a multilayer structure alternating between inorganic and organic layers. The inorganic layer (e.g., silicon nitride, silicon oxide) is formed via chemical vapor deposition (CVD) to provide the main water and oxygen barrier capabilities. The organic layer (e.g., polymer) is prepared using methods such as inkjet printing to cover potential particle defects in the inorganic layer and achieve planarization. This encapsulation structure effectively meets the basic water and oxygen barrier requirements of OLED devices.

[0064] When light emitted from an OLED device passes through the aforementioned encapsulation structure, it is trapped inside the device due to total internal reflection at the interface. Furthermore, the encapsulation material itself also experiences light absorption losses. These factors combined significantly reduce the device's light extraction efficiency, thus limiting the performance of OLED displays in high-brightness, low-power applications.

[0065] To improve the light extraction characteristics of OLED devices, the industry has proposed various technical solutions. Common methods include forming periodic or non-periodic corrugated structures on the surface of the thin-film encapsulation layer, introducing nanoparticles with scattering effects, or fabricating microlens arrays (MLAs). For example, by imprinting or etching micron-scale lens structures on the surface of the encapsulation layer, the exit angle of light at the interface can be changed, reducing the occurrence of total internal reflection.

[0066] However, the aforementioned technical solutions typically require additional patterning steps after thin-film encapsulation, such as photolithography, nanoimprinting, dry or wet etching, etc. These processes are not only complex and costly, but also present significant challenges in achieving uniform micro / nano structures on large-area substrates, easily introducing defects that affect encapsulation reliability and product yield, hindering low-cost, large-scale mass production applications. Furthermore, the introduced nanoparticles or microstructures may also pose potential risks to the density and water / oxygen barrier properties of the encapsulation layer.

[0067] To address the aforementioned problems, this application provides a display panel and display device. By incorporating a combined film layer comprising a first film layer and a second film layer in the packaging structure, wherein the first film layer is a low-refractive-index layer and the second film layer is a high-refractive-index layer, and the low-refractive-index first film layer is disposed on the light-emitting side of the high-refractive-index second film layer, and the low-refractive-index first film layer is made ultra-thin, when the light emitted by the light-emitting device undergoes total internal reflection at the interface between the second and first film layers, its electromagnetic field penetrates into the first film layer in the form of an evanescent wave. Because the first film layer is designed to be sufficiently thin, the evanescent wave can penetrate the first film layer, thereby disrupting the conditions for total internal reflection. Therefore, light that would otherwise be confined inside the display panel by total internal reflection can be effectively emitted, which is beneficial for improving the light extraction efficiency of the display panel.

[0068] Furthermore, this embodiment achieves improved light extraction efficiency through a simple multilayer film structure design, without the need to introduce complex nanostructures or microlens arrays, making the process relatively simple.

[0069] Before providing a further detailed description of the embodiments of this application, some of the nouns and terms involved in the embodiments of this application will be explained. The nouns and terms involved in the embodiments of this application are subject to the following interpretations.

[0070] Total internal reflection refers to the phenomenon where, when light travels from a medium with a higher refractive index (optically denser medium) to a medium with a lower refractive index (optically less dense medium), if the angle of incidence is greater than a certain critical angle, the refracted light rays will disappear, and all incident light rays will be reflected back to the original medium. This is one of the main reasons why light is confined inside the display panel and cannot be effectively emitted, thus reducing light extraction efficiency.

[0071] Evanescent waves are electromagnetic fields generated near the surface of optically less dense media when light undergoes total internal reflection in an optically denser medium, even though no refracted light enters the optically less dense medium. The amplitude of this electromagnetic field decays exponentially with distance from the interface. While this special electromagnetic wave does not propagate energy, its existence forms the basis for the technical solution of this application.

[0072] Composite film: refers to a composite structure formed by stacking at least two film layers with different refractive indices. In the embodiments of this application, it specifically refers to a specific combination consisting of a first film layer with a low refractive index and a second film layer with a high refractive index, used to regulate the propagation behavior of light, so as to suppress total internal reflection and improve light extraction efficiency.

[0073] Encapsulation structure: This refers to the structure placed on the light-emitting device to protect it from external corrosion such as water and oxygen. In OLED display panels, the reliability of the encapsulation structure is crucial, but its optical characteristics also significantly affect the light extraction efficiency of the display panel.

[0074] See Figure 2 and Figure 3 , Figure 2 This is a cross-sectional schematic diagram of a display panel provided according to some embodiments of this application. Figure 3 This is a schematic diagram illustrating the principle of the output light path in a display panel according to some embodiments of this application. One embodiment of this application provides a display panel including a substrate 100, a light-emitting device 200, and a packaging structure 500.

[0075] The light-emitting device 200 is disposed on one side of the substrate 100; the encapsulation structure 500 is disposed on the side of the light-emitting device 200 away from the substrate 100, and the encapsulation structure 500 includes a first encapsulation layer 510, a second encapsulation layer 520 and a third encapsulation layer 530 stacked together.

[0076] Wherein, at least one of the first encapsulation layer 510 and the third encapsulation layer 530 includes at least one combined film layer, the combined film layer including a first film layer 501 and a second film layer 502; in the same combined film layer, the first film layer 501 is located on the side of the second film layer 502 away from the light-emitting device 200, the refractive index of the first film layer 501 is less than the refractive index of the second film layer 502, the thickness of the first film layer 501 is less than the thickness of the second film layer 502, and the etching rate of the first film layer 501 is greater than the etching rate of the second film layer 502.

[0077] In addition, the combined film layer is configured such that the evanescent wave generated by total internal reflection at the interface between the first film layer 501 and the second film layer 502 can penetrate the first film layer 501.

[0078] It is understood that the substrate 100 in this embodiment can be a rigid substrate 100 or a flexible substrate 100. The rigid substrate 100 is, for example, a glass substrate 100 or a quartz substrate 100, while the flexible substrate 100 is, for example, a polyimide (PI) substrate 100, a polyethylene terephthalate (PET) substrate 100, etc., to meet the needs of flexible display products.

[0079] In this embodiment, the light-emitting device 200 is an organic light-emitting diode (OLED), which includes an anode, a light-emitting functional layer, and a cathode layer. The light-emitting functional layer includes at least a light-emitting layer, and may also include one or more of a hole injection layer, a hole transport layer, an electron injection layer, and an electron transport layer. In some examples, the light-emitting device 200 may also be a quantum dot light-emitting diode (QLED) or a micro-light-emitting diode (Micro-LED), but there are no specific limitations.

[0080] The encapsulation structure 500 is disposed on the side of the light-emitting device 200 away from the substrate 100, that is, on the light-emitting side of the light-emitting device 200, and is used to block external water and oxygen from corroding the light-emitting device 200. The encapsulation structure 500 includes a first encapsulation layer 510, a second encapsulation layer 520 and a third encapsulation layer 530 stacked together, wherein the second encapsulation layer 520 may be an organic layer, while the first encapsulation layer 510 and the third encapsulation layer 530 are inorganic layers, and at least one of the first encapsulation layer 510 and the third encapsulation layer 530 includes at least one composite film layer.

[0081] Specifically, the aforementioned combined film layer serves as the core structure for improving the light extraction function in this application embodiment. It includes a first film layer 501 and a second film layer 502, with the refractive index of the first film layer 501 being less than that of the second film layer 502. For example, the second film layer 502 is a high-refractive-index layer with a refractive index greater than or equal to 1.7; the first film layer 501 is a low-refractive-index layer with a refractive index less than or equal to 1.6. When light emitted from the light-emitting device 200 passes through the encapsulation structure 500, total internal reflection occurs at the interface between the high-refractive-index second film layer 502 and the low-refractive-index first film layer 501.

[0082] More specifically, due to the arrangement of the combined film layers, the evanescent wave generated by total internal reflection at the interface between the first film layer 501 and the second film layer 502 can penetrate the first film layer 501.

[0083] It's important to understand that when total internal reflection occurs, the light wave energy is not completely cut off at the interface; rather, some energy permeates into the low-refractive-index medium as an evanescent wave. For example... Figure 3 As shown, an evanescent wave is a non-uniform wave that propagates along the interface and whose amplitude decays exponentially in the direction perpendicular to the interface. The frequency of the evanescent wave is the same as that of the emitted wave, and it satisfies the continuity of the tangential component of the electric field. Its electric field behavior in the transmission region n3 layer (low refractive index layer) can be represented by the following equation (1):

[0084] (1)

[0085] (2)

[0086] (3)

[0087] in, For a constant electric field amplitude, It is a position vector. It's a wave arrow. It is the frequency of the light used. It is the exit angle of the evanescent wave.

[0088] Therefore, the penetration depth of an evanescent wave is usually determined by the following equation (4):

[0089] (4)

[0090] in, It is the angle of incidence of the outgoing ray. It is the critical angle for total internal reflection. Penetration depth represents the distance at which the evanescent wave amplitude decays to 1 / e of the amplitude at the interface, typically ranging from tens to hundreds of nanometers.

[0091] In this embodiment, the thickness of the first film layer 501 is configured to be less than or equal to the penetration depth. When the first film layer 501 is thin enough, the evanescent wave can penetrate the layer before its energy completely decays and reach another interface of the first film layer 501 (i.e., the interface adjacent to air or the upper film layer), thereby being converted back into normally propagating light, achieving the optical tunneling effect. This tunneling effect can effectively suppress the light energy confinement caused by total internal reflection, allowing light that would otherwise be trapped in the waveguide mode to couple out, thereby significantly improving the light extraction efficiency.

[0092] Furthermore, the thickness of the first film layer 501 is less than the thickness of the second film layer 502. That is, the thickness of the high-refractive-index second film layer 502 can be relatively thick to ensure packaging reliability. In other words, a thicker, dense inorganic layer can provide better water and oxygen barrier performance. From another perspective, this is beneficial for the formation of an ultrathin film layer 501, enabling evanescent wave tunneling.

[0093] In one example, the etching rate of the first film layer 501 is greater than the etching rate of the second film layer 502. Specifically, the etching rate refers to the thickness removed from the material surface per unit time during the etching process; that is, the etching rate can reflect characteristics of the film material such as chemical composition, density, and chemical bond strength. In this embodiment, the etching rate can also characterize the material differences between the first film layer 501 and the second film layer 502. The following example can be used for further understanding:

[0094] In one example, the material of the second film layer 502 should have a high refractive index and good density to simultaneously meet the requirements of optical control and encapsulation barrier. Exemplarily, the material of the second film layer 502 can be silicon nitride, silicon oxynitride, metal oxides (titanium oxide, aluminum oxide, etc.), or aluminum nitride, all of which can be prepared by chemical vapor deposition. It can be seen that the material of the second film layer 502 is mainly composed of silicon-nitrogen bonds or metal-oxygen bonds, with strong chemical bonds and high density. However, under the same etching conditions, its reactivity is low, resulting in a slower etching rate.

[0095] In one example, the material of the first film layer 501 should have a low refractive index and be able to form a good interfacial bond with the high refractive index layer. Exemplarily, the material of the first film layer 501 can be silicon oxide, silicon oxynitride, metal fluoride, metal oxide (alumina, etc.), etc., but is not specifically limited. It can be seen that the material of the first film layer 501 is mainly composed of silicon-oxygen bonds or metal-fluorine bonds, with relatively weak chemical bonds, resulting in high reactivity under fluorine-containing plasma etching conditions, thus leading to a faster etching rate.

[0096] It should be noted that the refractive index of silicon oxynitride can be adjusted. As a special material, the refractive index of silicon oxynitride can be continuously adjusted by changing the oxygen content. When the oxygen content is high, the refractive index of silicon oxynitride is close to that of silicon dioxide (e.g., 1.45); when the oxygen content is low, the refractive index of silicon oxynitride is close to that of silicon nitride (e.g., 2.1). This tunability allows it to be used as a high-refractive-index layer, a low-refractive-index layer, or a refractive index gradient transition layer. Of course, the tunable refractive index of silicon oxynitride can also be adapted to films prepared using different processes (with slight differences in refractive index).

[0097] In specific processes, refractive index can be controlled by adjusting the gas flow rate ratio in the chemical vapor deposition process. For example, changing the N2O flow rate ratio can increase the oxygen content and decrease the refractive index; or changing the N2O ratio can decrease the oxygen content and increase the refractive index. In some examples, the refractive index of the silicon oxynitride layer can be controlled between 1.5 and 1.7 to achieve specific optical matching requirements.

[0098] In some examples, each film layer of the encapsulation structure 500 can be prepared by chemical vapor deposition (CVD) processes, including but not limited to plasma-enhanced chemical vapor deposition (PECVD) and low-pressure chemical vapor deposition (LPCVD).

[0099] In other examples, atomic layer deposition (ALD) can also be used to prepare the various layers of the encapsulation structure 500, which is particularly suitable for low refractive index layers where thickness control is extremely important.

[0100] In this embodiment, the second encapsulation layer 520 can be an organic polymer layer, such as a polymer material prepared by inkjet printing, which is used to cover particle defects and achieve planarization. Exemplarily, the refractive index of the organic polymer layer is typically between 1.5 and 1.6.

[0101] Using the second encapsulation layer 520 as a dividing line, the first encapsulation layer 510 located on one side of the second encapsulation layer 520 may include at least one combined film layer, while the third encapsulation layer 530 located on the other side of the second encapsulation layer 520 may have only one film layer, such as... Figure 5As shown, for example, a silicon oxynitride film layer, whose refractive index is lower than that of a silicon nitride layer, can not only block water and oxygen but also reduce total emission at the interface between the third encapsulation layer 530 and the air. Conversely, the third encapsulation layer 530 may include at least one combined film layer, while the first encapsulation layer 510 has only one film layer (a silicon oxynitride film layer). Of course, there are also cases where both the first encapsulation layer 510 and the third encapsulation layer 530 include at least one combined film layer.

[0102] In summary, the display panel provided in this application embodiment, by setting a combined film layer including a first film layer 501 and a second film layer 502 in the encapsulation structure 500, wherein the first film layer 501 is a low refractive index layer and the second film layer 502 is a high refractive index layer, and the low refractive index first film layer 501 is disposed on the light-emitting side of the high refractive index second film layer 502, and the low refractive index first film layer 501 is set to be ultra-thin, when the light emitted by the light-emitting device 200 undergoes total internal reflection at the interface between the second film layer 502 and the first film layer 501, its electromagnetic field will penetrate into the first film layer 501 in the form of an evanescent wave; since the thickness of the first film layer 501 is designed to be thin enough, the evanescent wave can penetrate the first film layer 501, thereby destroying the conditions for total internal reflection. Therefore, the light that would originally be confined inside the display panel by total internal reflection can be effectively emitted, which is beneficial to improving the light extraction efficiency of the display panel.

[0103] Furthermore, this embodiment achieves improved light extraction efficiency through a simple multilayer film structure design, without the need to introduce complex nanostructures or microlens arrays, making the process relatively simple.

[0104] Below, we will combine the appendix Figure 1 - Appendix Figure 8 The specific structure of the display panel provided in the embodiments of this application will be described in detail.

[0105] like Figure 3 As shown, in some embodiments, the thickness of the first film layer 501 is less than or equal to the penetration depth of the evanescent wave. Exemplarily, the penetration depth of the evanescent wave can be derived from the above formula (4). This embodiment establishes a numerical relationship between the thickness of the first film layer 501 and the penetration depth of the evanescent wave, so that the configuration of the thickness has a clear basis, ensuring the improvement of light extraction efficiency.

[0106] In one example, the thickness of the first film layer 501 is less than one-quarter of the wavelength of the light emitted by the light-emitting device 200. Exemplarily, as the incident angle increases, the penetration depth of the evanescent wave varies from one-quarter of the wavelength to infinity. Therefore, by setting a low-refractive-index first film layer 501, total internal reflection is suppressed due to the coupling effect of the evanescent wave, and light is transmitted into the upper medium (i.e., optical tunneling effect). Typically, the thickness of the low-refractive-index first film layer 501 is less than one-quarter of the wavelength. Ideally, the thinner the low-refractive-index layer, the lower the refractive index, and thus the better the uniformity of total internal reflection. For example, for blue light with a wavelength of 450 nm, the thickness of the first film layer 501 can be less than 112.5 nm.

[0107] In this embodiment, the thickness of the first film layer 501 can be uniformly set. For example, based on the wavelength of blue light, the thickness of the first film layer 501 can be 100nm.

[0108] In addition, light-emitting devices of different colors can be individually packaged. In one example, the light-emitting device 200 includes a first-color light-emitting element, a second-color light-emitting element, and a third-color light-emitting element, and the light emitted by the first-color light-emitting element, the second-color light-emitting element, and the third-color light-emitting element are all different wavelengths; the first film layer 501 includes an adjacent first sub-layer, a second sub-layer, and a third sub-layer, the first sub-layer, the second sub-layer, and the third sub-layer correspond to light-emitting devices 200 of different colors, and the thicknesses of the first sub-layer, the second sub-layer, and the third sub-layer are all different.

[0109] Specifically, the first color light emits red light, the second color light emits green light, and the third color light emits blue light. Since red, green, and blue light have different wavelengths, the thickness of the first film layer 501 is designed to be different based on 1 / 4 wavelength. These different thicknesses are defined as the first sublayer, the second sublayer, and the third sublayer, respectively. For example, the first sublayer corresponds to the first color light emitter, the second sublayer corresponds to the second color light emitter, and the third sublayer corresponds to the third color light emitter. The thickness of the first sublayer is greater than that of the second sublayer, and the thickness of the second sublayer is greater than that of the third sublayer.

[0110] like Figure 2 and Figure 4 As shown, in some embodiments, the first encapsulation layer 510 includes at least one composite film layer, and the third encapsulation layer 530 includes at least one composite film layer.

[0111] Specifically, both the first encapsulation layer 510 and the third encapsulation layer 530 include composite film layers. Each encapsulation layer may include multiple composite film layers, but the overall thickness of the display panel should not be too large or the processing time too long. In one example, the first encapsulation layer 510 includes one composite film layer, and the third encapsulation layer 530 includes one composite film layer.

[0112] In this embodiment, two independent combined film layers are set on the light-emitting side of the light-emitting device 200, and are located on both sides of the second encapsulation layer 520 (organic layer). When the light passes through the encapsulation structure 500, it will pass through the optical tunneling structure from the high refractive index layer to the ultrathin low refractive index layer twice. Each tunneling process will couple out some of the light that would originally be bound by total internal reflection, which is beneficial to improving the total light extraction efficiency.

[0113] In some embodiments, the refractive index of the first film layer 501 is 1.3 to 1.6, the refractive index of the second film layer 502 is 1.7 to 2.1, and the refractive index of the second encapsulation layer 520 is 1.45 to 1.65.

[0114] For example, the difference in refractive index between the first film layer 501 and the second film layer 502 needs to ensure that an evanescent wave of sufficient intensity is generated under total internal reflection conditions. Similarly, the refractive index of the second encapsulation layer 520, as an organic planarization layer, is typically related to the properties of the organic polymer material, but is generally between 1.45 and 1.65, for example, it could be 1.55. The refractive index range of the second encapsulation layer 520 also enables it to form a good optical match with the upper and lower inorganic layers, reducing interface reflection losses.

[0115] In one example, the refractive index of the first film layer 501 is 1.4 to 1.5, and the refractive index of the second film layer 502 is 1.8 to 1.9. Exemplarily, the refractive indices of the first film layer 501 and the second film layer 502 are further optimized, wherein the first film layer 501 may be made of materials such as silicon oxide and oxygen-rich silicon oxynitride; and the second film layer 502 may be made of materials such as silicon nitride and silicon oxynitride with a specific composition.

[0116] In some embodiments, the material of the first film layer 501 includes at least one of silicon oxide, silicon oxide nitride, metal fluoride, and metal oxide. For example, silicon oxide has a refractive index of approximately 1.45-1.5, exhibiting good film-forming properties and interfacial adhesion; the refractive index of silicon oxide nitride is continuously adjustable within the range of 1.45 to 2.1, and the desired low refractive index value can be obtained by adjusting the ratio of silicon and oxygen elements; metal fluorides such as magnesium fluoride (refractive index approximately 1.38) and calcium fluoride (refractive index approximately 1.23) have extremely low refractive indices, providing a greater refractive index difference; and metal oxides such as aluminum oxide also have low refractive indices.

[0117] In one example, the first film layer 501 is a silicon nitride oxide layer, in which the ratio of silicon to oxygen is 5:1 to 1:3.

[0118] For example, when a silicon nitride oxide layer is used as the first film layer 501, its refractive index can be precisely controlled by adjusting the N2O gas flow rate ratio (changing the oxygen content) during the chemical vapor deposition (CVD) process. For instance, when the proportion of oxygen source in the reactant gas is increased, the proportion of oxygen atoms in the generated silicon nitride oxide layer increases, and its refractive index decreases accordingly. Conversely, the refractive index increases. This adjustability is beneficial for expanding the freedom of optical design and for achieving better light extraction effects.

[0119] In one example, the ratio of silicon to oxygen in the silicon nitride layer is 1:1.

[0120] In one example, the silicon to oxygen ratio in the silicon nitride layer is 1:3. The specific silicon to oxygen ratio in the silicon nitride layer is not limited here; it can be designed based on the actual required refractive index.

[0121] In one example, the first film layer 501 is a silicon oxide layer. Exemplarily, directly using a silicon oxide layer as the first film layer 501 results in a stable refractive index of around 1.45, and the process is simple and reliable.

[0122] In some embodiments, the material of the second film layer 502 includes at least one of silicon nitride, silicon oxide nitride, and metal oxide. For example, silicon nitride has a refractive index of approximately 1.8-2.1 and exhibits excellent density and water / oxygen barrier properties; the refractive index of silicon oxide nitride is continuously adjustable within the range of 1.45 to 2.1, and the desired high refractive index value can be obtained by adjusting the oxygen-nitrogen ratio; metal oxides such as titanium oxide (refractive index approximately 2.4), zirconium oxide (refractive index approximately 2.1), hafnium oxide (refractive index approximately 2.0), tantalum oxide (refractive index approximately 2.1), and aluminum oxide have extremely high refractive indices, providing a greater refractive index difference.

[0123] In one example, the thickness of the first film layer 501 in the first encapsulation layer 510 is less than the thickness of the first film layer 501 in the third encapsulation layer 530. For example, the thickness of the first film layer 501 in the first encapsulation layer 510 is 30 nm, and the thickness of the first film layer 501 in the third encapsulation layer 530 is 100 nm.

[0124] In one example, the refractive index of the first film layer 501 in the first encapsulation layer 510 is greater than the refractive index of the first film layer 501 in the third encapsulation layer 530. For example, the refractive index of the first film layer 501 in the first encapsulation layer 510 is 1.57, and the refractive index of the first film layer 501 in the third encapsulation layer 530 is 1.45.

[0125] In one example, the thickness of the second film layer 502 in the first encapsulation layer 510 is greater than the thickness of the second film layer 502 in the third encapsulation layer 530. For example, the thickness of the second film layer 502 in the first encapsulation layer 510 is 900 nm, and the thickness of the second film layer 502 in the third encapsulation layer 530 is 850 nm.

[0126] In one example, the refractive index of the second film layer 502 in the first encapsulation layer 510 is equal to the refractive index of the second film layer 502 in the third encapsulation layer 530. For example, the refractive index of the second film layer 502 in both the first encapsulation layer 510 and the third encapsulation layer 530 is 1.85.

[0127] In one example, the first encapsulation layer 510 includes multiple composite film layers, wherein all first film layers 501 have the same thickness and refractive index, and all second film layers 502 have the same thickness and refractive index. Exemplarily, the first encapsulation layer 510 includes two composite film layers, and the two composite film layers have identical structures.

[0128] In other examples, the first encapsulation layer 510 comprises multiple composite layers, wherein all the first layers 501 have unequal thicknesses and refractive indices; and / or, all the second layers 502 have unequal thicknesses and refractive indices. For example, the thickness and / or refractive index of all the first layers 501 or all the third layers 503 may vary (increase or decrease) in a gradient direction away from the second encapsulation layer 520.

[0129] In one example, the third encapsulation layer 530 includes multiple composite film layers, wherein all the first film layers 501 have the same thickness and refractive index, and all the second film layers 502 have the same thickness and refractive index. Exemplarily, the third encapsulation layer 530 includes two composite film layers, and the two composite film layers have identical structures.

[0130] In other examples, the third encapsulation layer 530 comprises multiple composite layers, wherein all the first layers 501 have unequal thicknesses and refractive indices; and / or, all the second layers 502 have unequal thicknesses and refractive indices. For example, the thickness and / or refractive index of all the first layers 501 or all the third layers 503 may vary (increase or decrease) in a gradient direction away from the second encapsulation layer 520.

[0131] In one example, the material of the second encapsulation layer 520 includes an organic polymer; exemplaryly, the material of the second encapsulation layer 520 is typically an organic polymer, such as epoxy resin, acrylate, polyimide precursor, polysiloxane, etc. Organic polymers can be fabricated by methods such as inkjet printing to fill and cover the microscopic undulations formed by the underlying device structure, providing a flat surface. Furthermore, since the refractive index of the second encapsulation layer 520 is around 1.55, it can, to some extent, act as a refractive index gradient transition, helping to reduce reflection losses of emitted light at the final interface.

[0132] In one example, the second film layer 502 is a silicon nitride layer. Using a silicon nitride layer as the second film layer 502 is advantageous because silicon nitride not only has a high refractive index of approximately 1.8-2.1, forming a good refractive index contrast with silicon oxide, but more importantly, it has good density and excellent barrier properties against water and oxygen. Therefore, using a silicon nitride layer as the second film layer 502 can improve light extraction while ensuring the reliability of the packaging structure 500.

[0133] In some embodiments, the thickness of the first film layer 501 is 10 nm to 200 nm, the thickness of the second film layer 502 is 100 nm to 2000 nm, and the thickness of the second encapsulation layer 520 is 10000 nm to 15000 nm. For example, the thickness of the first film layer 501 can cover the evanescent wave penetration depth range corresponding to the OLED emission wavelength. The lower limit of 10 nm ensures the continuity and density of the film, while the upper limit of 200 nm ensures that the film thickness does not exceed the penetration depth; that is, an excessively thick film layer will not achieve the evanescent wave tunneling effect.

[0134] Furthermore, the thickness of the second film layer 502 can balance packaging reliability and optical transmittance. The lower limit of 100nm can provide sufficient water and oxygen barrier capabilities, while the upper limit of 2000nm can avoid excessive internal stress, excessive processing time, and increased light absorption caused by excessive film thickness.

[0135] Furthermore, the thickness of the second encapsulation layer 520 is within the standard thickness of organic planarization layers, which can cover the micro-undulations of the underlying structure without reducing flexibility or increasing process costs due to excessive thickness.

[0136] In one example, the thickness of the first film layer 501 is 30 nm to 100 nm, and the thickness of the second film layer 502 is 800 nm to 1000 nm. Exemplarily, the thickness of the first film layer 501 is 30 nm to 100 nm to ensure effective transmission of evanescent waves; the thickness of the second film layer 502 is 800 nm to 1000 nm (i.e., 0.8 μm to 1.0 μm) to provide sufficient encapsulation barrier capability without significantly increasing light absorption.

[0137] In one example, when the first film layer 501 is a silicon oxide layer, its refractive index is 1.45 and its thickness can be 60 nm or 100 nm.

[0138] In one example, when the first film layer 501 is a silicon nitride layer, its refractive index is 1.57 and its thickness can be 30 nm.

[0139] In one example, the first film layer 501 in the first encapsulation layer 510 is a silicon oxide nitride layer, and the first film layer 501 in the third encapsulation layer 530 is a silicon oxide layer. Exemplarily, the thickness of the first film layer 501 in the first encapsulation layer 510 is 30 nm and the refractive index is 1.57; the thickness of the first film layer 501 in the third encapsulation layer 530 is 100 nm and the refractive index is 1.45.

[0140] In one example, when the second film layer 502 is a silicon nitride layer, its refractive index is 1.85 and its thickness can be 850 nm or 900 nm.

[0141] like Figure 2 , Figure 4 and Figure 5 As shown, in some embodiments, the first encapsulation layer 510 is located on the side of the second encapsulation layer 520 facing the light-emitting device 200; the encapsulation structure 500 includes a third film layer 600, which is located on the side of the first encapsulation layer 510 facing the light-emitting device 200; the refractive index of the third film layer 600 is less than that of the second film layer 502 in the first encapsulation layer 510, and the thickness of the third film layer 600 is less than that of the second film layer 502 in the first encapsulation layer 510.

[0142] It is understood that in this embodiment, the stacking order of the display panel is light-emitting device 200, first encapsulation layer 510, second encapsulation layer 520, and third encapsulation layer 530. Furthermore, the encapsulation structure 500 may also include a third film layer 600, which is located on the side of the first encapsulation layer 510 facing the light-emitting device 200. The design requirements for this third film layer 600 can refer to the first film layer 501 in the aforementioned combined film layers.

[0143] In one example, the thickness of the third film layer 600 is less than, equal to, or greater than the thickness of the first film layer 501 of the first encapsulation layer 510. For example, the thickness of the third film layer 600 is 60 nm, and the thickness of the first film layer 501 of the first encapsulation layer 510 is 30 nm.

[0144] In one example, the refractive index of the third film layer 600 is 1.3 to 1.6. Exemplarily, the refractive index of the third film layer 600 is 1.45.

[0145] In one example, the material of the third film layer 600 includes at least one of silicon oxide, silicon oxide nitride, metal fluoride, and metal oxide. Exemplarily, the third film layer 600 is a silicon oxide layer.

[0146] It should be further understood that the purpose of setting the third film layer 600 is that, in some embodiments, the display panel further includes an auxiliary layer 300, which is disposed between the light-emitting device 200 and the encapsulation structure 500; the refractive index of the auxiliary layer 300 is greater than the refractive index of the third film layer 600.

[0147] It is understood that the auxiliary layer 300 includes a planarization layer and a buffer layer directly covering the light-emitting device 200. The planarization layer and the buffer layer are usually organic material layers with high refractive index. Therefore, the light emitted by the light-emitting device 200 is prone to full emission in this layer. For this reason, in this embodiment, a third film layer 600 is provided between the auxiliary layer 300 and the first encapsulation layer 510.

[0148] Specifically, the refractive index of the third film layer 600 is designed to be less than that of the second film layer 502 in the first encapsulation layer 510, while the thickness of the third film layer 600 is less than or equal to the thickness of the first film layer 501 in the first encapsulation layer 510. For example, the thickness of the third film layer 600 can be from 10 nm to 100 nm, preferably from 20 nm to 60 nm.

[0149] For example, the material of the third film layer 600 may include at least one of silicon oxide, silicon nitride, and metal fluoride. That is, the specifications of the third film layer 600 may be set with reference to the first film layer 501.

[0150] In this embodiment, the third film layer 600 prevents total internal reflection loss of light when entering the encapsulation structure 500. If the first encapsulation layer 510 directly contacts the light-emitting device 200 or its auxiliary layer 300, total internal reflection may occur at certain incident angles due to the high refractive index of the auxiliary layer 300, preventing light from entering the encapsulation structure 500. In this case, the third film layer 600 acts as a low refractive index buffer layer, effectively suppressing total internal reflection at that location.

[0151] like Figure 2As shown, in some examples, the light-emitting device 200 of the display panel is an OLED device, and the encapsulation structure 500 above it consists of multiple film layers prepared by chemical vapor deposition and inkjet printing processes. Specifically, from the light-emitting device 200 upwards, the layers are, in sequence: a planarization layer, a buffer (protective) layer, a first low-refractive-index layer (third film layer 600) composed of a silicon nitride layer or silicon oxide, with a thickness of 30 nm and a refractive index of approximately 1.57; a first high-refractive-index layer (second film layer 502) composed of silicon nitride, with a thickness of 900 nm and a refractive index of approximately 1.85; a second low-refractive-index layer (first film layer 501) composed of a silicon nitride layer or silicon oxide, with a thickness of 60 nm and a refractive index of approximately 1.45; a second encapsulation layer 520 composed of an organic polymer, with a thickness of 12000 nm and a refractive index of approximately 1.55; a second high-refractive-index layer (second film layer 502) composed of silicon nitride, with a thickness of 850 nm and a refractive index of approximately 1.85; and a third low-refractive-index layer (first film layer 501) composed of silicon oxide, with a thickness of 100 nm and a refractive index of approximately 1.45.

[0152] In this structure, the first high refractive index layer and the second low refractive index layer constitute the combined film layer in the first encapsulation layer 510; the second high refractive index layer and the third low refractive index layer constitute the combined film layer in the third encapsulation layer 530.

[0153] When the light-emitting device 200 emits light, the light propagates outward. A portion of the light, after passing through the first refractive index layer, is incident at a large angle at the interface between the first high refractive index layer and the second low refractive index layer. Since the thickness of the first low refractive index layer (60nm) is much smaller than the wavelength of light, the condition for suppressed total internal reflection is met. The light that would otherwise be totally reflected is able to tunnel through the second low refractive index layer and continue propagating outward. After passing through the thick organic polymer layer, the light undergoes a similar process at the second set of combined film layers, further improving the light extraction efficiency, and finally exits from the display panel.

[0154] By combining the multi-layer structure of this embodiment with the single-layer structure of related technologies (such as...) Figure 1As shown, a comparative experiment was conducted using a layer 41 (silicon nitride layer), a second layer 42 (polymer layer), and a third layer 43 (silicon nitride layer) to verify the overall effectiveness of this application. As shown in the table below, under the same test conditions, the display panel of this embodiment improved the blue light index by 11.6%, and the current efficiency of green and red light by 9.7% and 32.4%, respectively. In terms of power consumption, the power consumption of white, blue, green, and red light was reduced by 6.8%, 4.3%, 3.6%, and 3.6%, respectively. Experimental data demonstrate that by rationally designing the encapsulation structure 500 containing the combined film layers, the light extraction efficiency of the display panel can be improved and power consumption reduced while ensuring encapsulation reliability.

[0155]

[0156] Based on the same concept, this application also provides a display device. Figure 9 This is a schematic diagram of the structure of the display device 20 provided in the embodiments of this application, as shown below. Figure 9 As shown, the display device 20 includes the display panel 10 in any of the above embodiments. Exemplarily, as... Figure 9 As shown, the display device 20 includes a display panel 10. Therefore, the display device 20 also has the beneficial effects of the display panel 10 in the above embodiments. The similarities can be understood with reference to the explanation of the display panel 10 above, and will not be repeated below.

[0157] The display device 20 provided in this embodiment can be a display device 20 that can be Figure 9 The mobile phone shown can also be any electronic product with display function, including but not limited to the following categories: television, laptop, desktop monitor, tablet, digital camera, smart bracelet, smart glasses, vehicle display, industrial control equipment, medical display, touch interactive terminal, etc. This application embodiment does not make any special limitation in this regard.

[0158] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0159] The embodiments described above are merely illustrative of several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.

Claims

1. A display panel, characterized in that, The display panel includes: substrate(100); A light-emitting device (200) is disposed on one side of the substrate (100); An encapsulation structure (500) is disposed on the side of the light-emitting device (200) away from the substrate (100). The encapsulation structure (500) includes a first encapsulation layer (510), a second encapsulation layer (520), and a third encapsulation layer (530) stacked together. Wherein, at least one of the first encapsulation layer (510) and the third encapsulation layer (530) includes at least one combined film layer, the combined film layer including a first film layer (501) and a second film layer (502); in the same combined film layer, the first film layer (501) is located on the side of the second film layer (502) away from the light-emitting device (200), the refractive index of the first film layer (501) is less than the refractive index of the second film layer (502), the thickness of the first film layer (501) is less than the thickness of the second film layer (502), and the etching rate of the first film layer (501) is greater than the etching rate of the second film layer (502).

2. The display panel according to claim 1, characterized in that, The thickness of the first film layer (501) is less than or equal to the penetration depth of the evanescent wave generated by total internal reflection at the interface between the first film layer (501) and the second film layer (502); Preferably, the thickness of the first film layer (501) is less than 1 / 4 of the wavelength of the light emitted by the light-emitting device (200); Preferably, the light-emitting device (200) includes a first color light-emitting element, a second color light-emitting element, and a third color light-emitting element, and the light emitted by the first color light-emitting element, the second color light-emitting element, and the third color light-emitting element are all different wavelengths; the first film layer (501) includes an adjacent first sub-layer, a second sub-layer, and a third sub-layer, the first sub-layer, the second sub-layer, and the third sub-layer respectively correspond to light-emitting devices (200) of different colors, and the thicknesses of the first sub-layer, the second sub-layer, and the third sub-layer are all different.

3. The display panel according to claim 1, characterized in that, The first encapsulation layer (510) includes at least one of the combined film layers, and the third encapsulation layer (530) includes at least one of the combined film layers; Preferably, the first encapsulation layer (510) includes one layer of the combined film layer, and the third encapsulation layer (530) includes one layer of the combined film layer; Preferably, the thickness of the first film layer (501) in the first encapsulation layer (510) is less than the thickness of the first film layer (501) in the third encapsulation layer (530); Preferably, the refractive index of the first film layer (501) in the first encapsulation layer (510) is greater than the refractive index of the first film layer (501) in the third encapsulation layer (530); Preferably, the thickness of the second film layer (502) in the first encapsulation layer (510) is greater than the thickness of the second film layer (502) in the third encapsulation layer (530); Preferably, the refractive index of the second film layer (502) in the first encapsulation layer (510) is equal to the refractive index of the second film layer (502) in the third encapsulation layer (530); Preferably, the first encapsulation layer (510) comprises multiple layers of the combined film layers, wherein all the first film layers (501) have the same thickness and refractive index, and all the second film layers (502) have the same thickness and refractive index; Preferably, the third encapsulation layer (530) comprises multiple layers of the combined film layers, wherein all the first film layers (501) have the same thickness and refractive index, and all the second film layers (502) have the same thickness and refractive index.

4. The display panel according to any one of claims 1-3, characterized in that, The first film layer (501) has a refractive index of 1.3 to 1.6, the second film layer (502) has a refractive index of 1.7 to 2.1, and the second encapsulation layer (520) has a refractive index of 1.45 to 1.

65. Preferably, the first film layer (501) has a refractive index of 1.4 to 1.5, and the second film layer (502) has a refractive index of 1.8 to 1.

9.

5. The display panel according to any one of claims 1-3, characterized in that, The material of the first film layer (501) includes at least one of silicon oxide, silicon nitride, metal fluoride, and metal oxide; Preferably, the first film layer (501) is a silicon nitride oxide layer, wherein the ratio of silicon to oxygen in the silicon nitride oxide layer is 5:1 to 1:3; Preferably, the ratio of silicon to oxygen in the silicon nitride is 1:1; Preferably, the ratio of silicon to oxygen in the silicon nitride is 1:3; Preferably, the first film layer (501) is a silicon oxide layer; Preferably, the first film layer (501) in the first encapsulation layer (510) is a silicon oxide nitride layer, and the first film layer (501) in the third encapsulation layer (530) is a silicon oxide layer.

6. The display panel according to any one of claims 1-3, characterized in that, The material of the second film layer (502) includes at least one of silicon nitride, silicon oxide nitride, and metal oxide; the material of the second encapsulation layer (520) includes an organic polymer; Preferably, the second film layer (502) is a silicon nitride layer.

7. The display panel according to any one of claims 1-3, characterized in that, The thickness of the first film layer (501) is 10 nm to 200 nm, the thickness of the second film layer (502) is 100 nm to 2000 nm, and the thickness of the second encapsulation layer (520) is 10000 nm to 15000 nm. Preferably, the thickness of the first film layer (501) is 30 nm to 100 nm, and the thickness of the second film layer (502) is 800 nm to 1000 nm.

8. The display panel according to claim 1, characterized in that, The first encapsulation layer (510) is located on the side of the second encapsulation layer (520) facing the light-emitting device (200); The encapsulation structure (500) includes a third film layer (600) located on the side of the first encapsulation layer (510) facing the light-emitting device (200); the refractive index of the third film layer (600) is less than the refractive index of the second film layer (502) of the first encapsulation layer (510), and the thickness of the third film layer (600) is less than the thickness of the second film layer (502) in the first encapsulation layer (510); Preferably, the thickness of the third film layer (600) is less than, equal to or greater than the thickness of the first film layer (501) in the first encapsulation layer (510); Preferably, the refractive index of the third film layer (600) is 1.3 to 1.6; Preferably, the material of the third film layer (600) includes at least one of silicon oxide, silicon nitride, metal fluoride, and metal oxide; Preferably, the second encapsulation layer (520) is constructed as an organic material layer, the thickness of the second encapsulation layer (520) is 10000 nm to 14000 nm, and the refractive index of the second encapsulation layer (520) is 1.45 to 1.

6.

9. The display panel according to claim 8, characterized in that, The display panel further includes an auxiliary layer (300) disposed between the light-emitting device and the encapsulation structure (500); the refractive index of the auxiliary layer (300) is greater than the refractive index of the third film layer (600).

10. A display device, characterized in that, Includes the display panel as described in any one of claims 1-9.

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