Systems and methods for recovering organic contaminants from semiconductor wafers

Abstract

Systems and methods for integrated decomposition and scanning of organic and inorganic contaminants from a semiconductor wafer are described. In one aspect, a method includes, but is not limited to: positioning a nozzle over a surface of a semiconductor wafer supported within or in a chamber body interior; introducing a first scanning fluid including one or more organic solvents to an inlet port of the nozzle; directing a portion of the first scanning fluid onto the surface of the semiconductor wafer to allow for interaction between the scanning fluid and one or more organic contaminants present on the surface of the semiconductor wafer; and removing the first scanning fluid containing at least a portion of the one or more organic contaminants from the surface of the semiconductor wafer via the nozzle.

Description

Cross-references to related applications

[0001] This application is subject to U.S. Provisional Application No. 63 / 536,194, filed September 1, 2023, entitled “SYSTEMS AND METHODS FOR RECOVERY AND IDENTIFICATION OF ORGANIC CONTAMINANTS AND RESIDUE ON SEMICONDUCTOR WAFER SURFACES,” filed September 27, 2023, entitled “COLLECTION AND COMBINATION OF MULTIPLE SCAN SAMPLESFOR SEMICONDUCTOR WAFER ANALYSIS,” and U.S. Provisional Application No. 63 / 585,787, filed September 27, 2023, entitled “INLINE GENERATION OF ORGANIC SOLVENT SCAN SOLUTION FOR SEMICONDUCTOR WAFER,” filed September 27, 2023. Priority claims are made to U.S. Provisional Application No. 63 / 585,805, entitled “ANALYSIS”, and to U.S. Provisional Application No. 63 / 585,810, filed September 27, 2023, entitled “SYSTEMS AND METHODS FOR RECOVERING ORGANIC CONTAMINANTS FROM SEMICONDUCTING WAFERS”. U.S. Provisional Applications No. 63 / 536,194, No. 63 / 585,787, No. 63 / 585,805, and No. 63 / 585,810 are incorporated herein by reference in their entirety. Background Technology

[0002] Mass spectrometry is an analytical technique used to determine trace impurities (e.g., elements, organic matter, or other impurities) in liquid or gas samples. Sample introduction systems can be used to introduce fluid samples into various analytical instruments. These systems transport aliquots of liquid samples to a nebulizer, which converts the sample into a polydisperse aerosol suitable for ionization in a mass spectrometer. Inductively coupled plasma (ICP) ionization sources are used for elemental impurities, while electrospray ionization, atmospheric pressure chemical ionization (APCI), or other ionization sources are used for organic impurities. These ionization sources are coupled to a mass spectrometer, such as a quadrupole mass spectrometer, a time-of-flight mass spectrometer, or an ion trap mass spectrometer. Summary of the Invention

[0003] Systems and methods are described for integrated decomposition and scanning of semiconductor wafers for organic and inorganic impurities. In one aspect, a method for scanning the surface of a semiconductor wafer for organic contaminants using a nozzle includes, but is not limited to: positioning the nozzle above the surface of the semiconductor wafer, the semiconductor wafer being supported adjacent to or within a chamber body; introducing a first scanning fluid containing one or more organic solvents into the nozzle inlet port; directing a portion of the first scanning fluid onto the surface of the semiconductor wafer to allow interaction between the first scanning fluid and one or more organic contaminants present on the surface of the semiconductor wafer; removing the first scanning fluid containing at least a portion of the one or more organic contaminants from the surface of the semiconductor wafer via the nozzle; introducing a second scanning fluid containing one or more organic solvents into the nozzle inlet port; directing a portion of the second scanning fluid onto the surface of the semiconductor wafer to allow interaction between the second scanning fluid and one or more residual organic contaminants present on the surface of the semiconductor wafer after removal of the first scanning fluid; and removing the second scanning fluid containing at least a portion of the one or more residual organic contaminants from the surface of the semiconductor wafer via the nozzle.

[0004] In one aspect, a method for scanning the surface of a semiconductor wafer with organic contaminants using a nozzle includes, but is not limited to: positioning the nozzle above the surface of the semiconductor wafer, the semiconductor wafer being supported adjacent to or within a chamber body; introducing a first scanning fluid into the inlet port of the nozzle, the first scanning fluid containing one or more organic solvents; directing a portion of the first scanning fluid onto the surface of the semiconductor wafer to allow interaction between the first scanning fluid and one or more organic contaminants present on the surface of the semiconductor wafer; simultaneously directing a second portion of the first scanning fluid onto the surface of the semiconductor wafer to the nozzle to replenish a volume of the first scanning fluid on the surface of the semiconductor wafer; and removing the first scanning fluid containing at least a portion of one or more organic contaminants from the surface of the semiconductor wafer via the nozzle.

[0005] In one aspect, a method for scanning the surface of a semiconductor wafer with organic contaminants using a nozzle includes, but is not limited to: positioning the nozzle above the surface of the semiconductor wafer, the semiconductor wafer being supported adjacent to or within a chamber body; introducing a first scanning fluid into the inlet port of the nozzle, the first scanning fluid comprising one or more organic fluids; directing a portion of the first scanning fluid onto the surface of the semiconductor wafer to allow interaction between the scanning fluid and one or more organic contaminants present on the surface of the semiconductor wafer; and removing the first scanning fluid containing at least a portion of the one or more organic contaminants from the surface of the semiconductor wafer via the nozzle.

[0006] This summary is provided to introduce, in a simplified form, the key concepts that will be further described in the detailed description below. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to be used to help determine the scope of the claimed subject matter. Attached Figure Description

[0007] The accompanying drawings provide a detailed description. The same reference numerals in different examples of the description and drawings may denote similar or identical parts.

[0008] Figure 1A This is an isometric view of a system for recovering organic pollutants from semiconductor wafers according to an embodiment of the present invention.

[0009] Figure 1B yes Figure 1A The system in which the semiconductor wafer is located within the cavity is an isometric view.

[0010] Figure 2A yes Figure 1A A cross-sectional view of the system, with the semiconductor wafer located at the scan position.

[0011] Figure 2B yes Figure 1A The system in which the semiconductor wafer is located at the decomposition point is a cross-sectional view.

[0012] Figure 2C yes Figure 1A A cross-sectional view of the system, in which the semiconductor wafer is located in the rinsing position.

[0013] Figure 3 This is an embodiment of the present invention. Figure 1A An isometric view of a portion of the chamber body of the system.

[0014] Figure 4 yes Figure 1A An isometric view of the system, in which the scanning arm positions the nozzle above the surface of the semiconductor wafer at the scanning position.

[0015] Figure 5 yes Figure 1A A partial isometric view of the system, with the scanning arm located at the rinsing station for the nozzles.

[0016] Figure 6 This is a top view of the scanning arm at a first position above the semiconductor wafer and a subsequent second position of the semiconductor wafer during the scanning process according to an embodiment of the present invention.

[0017] Figure 7A This is an isometric view of a nozzle for a semiconductor wafer decomposition and scanning system according to an embodiment of the present invention.

[0018] Figure 7B yes Figure 7A A top view of the nozzle.

[0019] Figure 7C yes Figure 7A A bottom view of the nozzle.

[0020] Figure 7D yes Figure 7B The nozzle is shown in a cross-sectional view taken along 7D-7D.

[0021] Figure 8A This is a partial cross-sectional view of a nozzle mounting assembly of a system for integrated decomposition and scanning of semiconductor wafers according to an embodiment of the present invention.

[0022] Figure 8B yes Figure 8A A cross-sectional view of the nozzle mounting assembly in contact with the surface.

[0023] Figure 8C yes Figure 8A A partial cross-sectional view of the nozzle mounting assembly being lifted from the surface and leveled.

[0024] Figure 9A This is a schematic diagram of a fluid transport system for a semiconductor wafer decomposition and scanning system according to an embodiment of the present invention.

[0025] Figure 9B According to an embodiment of the present invention Figure 9A A schematic diagram of a fluid delivery system in a chemical blank load configuration.

[0026] Figure 9C According to an embodiment of the present invention Figure 9A A schematic diagram of the fluid delivery system in a chemical injection configuration.

[0027] Figure 9D According to an embodiment of the present invention Figure 9A A schematic diagram of the fluid delivery system in a nozzle loop load configuration.

[0028] Figure 9E According to an embodiment of the present invention Figure 9A A schematic diagram of the fluid delivery system in a nozzle load configuration.

[0029] Figure 9F According to an embodiment of the present invention Figure 9A A schematic diagram of the fluid delivery system in a recovery configuration.

[0030] Figure 10 This is a schematic diagram of an atomizer fluid delivery system for a semiconductor wafer decomposition and scanning system according to an embodiment of the present invention.

[0031] Figure 11A This is a schematic side view of a semiconductor wafer with organic contaminants present on its surface.

[0032] Figure 11B This is a schematic side view of a system including a scanning nozzle according to an embodiment of the present invention, wherein the scanning nozzle is shown as leading the scanning solution to... Figure 11A Semiconductor wafers.

[0033] Figure 11C An embodiment of the present invention illustrates a scanning solution replenishment system. Figure 11B The system shown is a side view, and the scanning solution replenishment system is used to replenish the scanning solution when the scanning solution evaporates from the surface of the semiconductor wafer.

[0034] Figure 11D According to an embodiment of the present invention Figure 11B A schematic side view of the system, in which organic contaminants are introduced into the scanning solution, showing a scanning nozzle that draws the scanning solution from the surface of a semiconductor wafer.

[0035] Figure 11E According to an embodiment of the present invention Figure 11D A schematic diagram of a system having a scanning nozzle that transmits a scanning solution containing organic contaminants to the analysis system.

[0036] Figure 12 This is a graph illustrating exemplary experimental results of recovering organic contaminants from the surface of a semiconductor wafer according to an embodiment of the present invention.

[0037] Figure 13 This is a schematic diagram of a system for collecting and combining multiple scanned samples to analyze semiconductor wafers according to an embodiment of the present invention.

[0038] Figure 14 This is a schematic diagram of a system for collecting and combining multiple scanning samples to analyze a semiconductor wafer according to an embodiment of the present invention, wherein the sample collection container shown has a conical bottom in communication with an outlet valve.

[0039] Figure 15 This is a schematic diagram of a system for generating organic solvent scanning solutions and calibration standards in-line according to an embodiment of the present invention.

[0040] Figure 16 This is a schematic diagram of a system for generating organic solvent scanning solutions and calibration standards in-line according to an embodiment of the present invention, showing multiple pumps to dispense organic solvent or calibration standard solutions to a mixing valve. Detailed Implementation

[0041] Overview The determination of trace element concentrations or contents in a sample can provide an indication of sample purity or the acceptability of the sample as a reagent, reactive component, etc. For example, in certain production or manufacturing processes (e.g., mining, metallurgy, semiconductor processing, pharmaceutical processing, etc.), impurity tolerances can be very stringent, for example, on the order of parts per billion. In semiconductor wafer processing, testing for impurities in the wafer, such as metallic impurities, organic impurities, or residues, can reduce wafer capabilities or render it inoperable. For example, metallic impurities on a wafer can reduce carrier lifetime and cause dielectric breakdown of wafer components, while organic impurities can slow silicon dioxide growth, cause unintentional doping, neutralize photoacids, degrade gate oxide structures, and alter hydrophobicity or hydrophilicity.

[0042] Vapor phase decomposition (VPD) followed by scanning is a technique for analyzing the composition of wafers to determine the presence of metallic impurities. Conventional VPD and scanning techniques have limited throughput for impurity analysis processing and scanning of silicon wafers. For example, systems typically utilize separate chambers for the VPD and scanning processes. In the VPD chamber, silicon dioxide and other metallic impurities present on the surface are contacted with vapors (e.g., hydrogen fluoride (HF), hydrogen peroxide (H₂O₂), or combinations thereof) and removed from the surface as vapors (e.g., silicon tetrafluoride (SiF₄)). The processed wafer is then transferred to a separate chamber for scanning, where droplets are introduced onto the surface of the processed wafer to collect the residue left after the decomposition vapors react with the wafer.

[0043] While VPD technology is suitable for detecting and identifying metallic impurities, conventional VPD techniques have significant limitations in recovering and identifying organic contaminants or residues present in or on semiconductor wafers, which can adversely affect semiconductor processing. For example, the decomposition fluids used in conventional VPD techniques can cleave or otherwise react with organic molecules, thus preventing the identification of the original contaminants and the determination of their concentration on the semiconductor wafer. Similarly, specific analytical systems used in VPD systems do not facilitate the recovery and identification of organic contaminants or residues. For instance, inductively coupled plasma systems used in identifying metallic impurities can prevent the identification of elemental bond structures present in organic samples, where such bond structures would be used to determine the proper identity of the original organic molecules.

[0044] Furthermore, attempting to recover organic contaminants using a single-scan solution may fail to extract all organic impurities present on the semiconductor wafer. For example, in a single scan, the scan may only collect 80% of all residues on the semiconductor wafer, leaving the remainder uncollected. The inability to collect all residues may be due to the specific composition of the contaminants (e.g., metals, organics, etc.), the chemical composition of the scan solution (e.g., polarity, non-polarity, etc.), whether a decomposition process occurred prior to the scan, and so on. For instance, organic molecules can have different recovery efficiencies relative to other organic molecules, and the type of solvent used in the scan nozzle can affect which organic residues are removed from the semiconductor wafer, how much is removed, and which remain on the surface. Therefore, scan analysis only provides a partial understanding of the total contaminants present, with the remaining unknown contaminants potentially severely and adversely affecting semiconductor manufacturing and integration. Attempts to premix the scan solution can lead to inaccurate chemical proportions due to interactions between chemicals during storage, inaccurate transfer methods for mixing chemicals, and the risk of contamination during storage and transportation, which in turn can result in the inability to collect organic contaminants or their fractions.

[0045] Accordingly, the present invention relates at least in part to systems and methods for integrated decomposition and scanning of organic and inorganic impurities on semiconductor wafers. In one aspect, the system facilitates the decomposition and scanning of semiconductor wafers, wherein a chamber facilitates the decomposition and scanning of a semiconductor wafer having a single chamber occupancy area. Alternatively or additionally, the system can operate without an initial decomposition step, for example to avoid pyrolyzing organic contaminants prior to scanning (e.g., to maintain subsequent identification of organic contaminants). During scanning, a nozzle guides a fluid flow along the surface of the semiconductor wafer between a first port and a second port of the nozzle, the fluid flow being guided by a nozzle shroud defining an elongated channel to guide the flow along the wafer surface. Alternative or additional nozzles may be used, for example, to support a scanning solution comprising an organic solvent to collect organic contaminants.

[0046] In various aspects, the chamber defines at least two orifices through which semiconductor wafers can be passed by operating a wafer support and an associated motor system. The chamber has bosses to provide areas within the chamber for decomposition and rinsing, while controlling the movement of fluid within the chamber, for example, for drainage and to prevent cross-contamination. The motor system controls the vertical position of the wafer support relative to the chamber body to move the semiconductor within the chamber body, wherein positioning above the chamber body, supported by the motor system, is used for loading and unloading the wafer, providing entry nozzles, etc. The chamber is further incorporated with an atomizer or other jetting device to directly guide the decomposition fluid, atomized by the atomizer, onto the surface of the semiconductor wafer as the wafer support positions the semiconductor wafer within the internal region of the chamber. The chamber may be incorporated with a cover, for example, which can be opened and closed relative to the chamber during decomposition to isolate the internal region of the chamber from the external region. Nozzles can be positioned relative to the chamber by a rotatable scanning arm, wherein the nozzles can be positioned away from the chamber to facilitate cover closure (e.g., during decomposition) or to facilitate rinsing the nozzles at a rinsing station. Furthermore, a rotatable scanning arm can position the nozzle on the semiconductor wafer during scanning. The system can utilize a fluid delivery system including a switchable selector valve and a pump to control the flow of fluid from the wafer surface to the nozzle for preparing blanks, rinsing system components, etc. After or during the scanning process, the scanning fluid can be collected and sent to an analytical device (e.g., an ICPMS device) for analysis and determination of its composition.

[0047] In various aspects, the scanning nozzle can introduce an organic scanning solution onto one or more surfaces of a semiconductor wafer. The scanning nozzle moves relative to the surface of the semiconductor wafer to draw organic contaminants into the scanning solution. The scanning solution is recovered from the semiconductor wafer surface (e.g., via a pump in fluid communication with the scanning nozzle) and transferred to an analytical system for identification and concentration determination. The analytical system may include a time-of-flight (TOF) mass spectrometer, a triple quadrupole (triple quadrupole or QQQ) mass spectrometer, a gas chromatography-mass spectrometry (GC-MS) system, a gas chromatography-flame ionization detector (GC-FID), other analytical systems for organic molecule analysis, or combinations thereof.

[0048] In various aspects, the present invention relates at least in part to systems and methods for collecting and combining multiple scanned samples to analyze contaminants that may be present on semiconductor wafers. A sample collection container can be used to collect multiple scans from one or more scanning nozzles before transferring the combined sample to an analytical apparatus (e.g., ICP-MS, time-of-flight spectrometer, etc.). Multiple wafer scans are collected in the sample collection container and allowed to be mixed into a single sample for transfer to the analytical apparatus. In embodiments, the scanning nozzles or multiple scanning nozzles may utilize the same or different scanning solutions to target contaminants of different components (e.g., metals, organic matter, etc.) to provide a single sample including a complete recovery profile of the wafer contaminants. For example, one or more scans may be performed using polar solvents, non-polar solvents, aqueous solutions, or combinations thereof, wherein said scans are introduced into the sample collection container, mixed into a single sample, and transferred to the analytical apparatus for identification and quantification of contaminants.

[0049] In various aspects, the present invention relates at least in part to systems and methods for in-line generation of organic scanning solutions and internal standards for analyzing organic contaminants that may be present on semiconductor wafers. A pump system is fluidly connected to multiple organic solvents, internal standards, or combinations thereof to deliver two or more of the organic solvents and internal standards to an in-line mixing device (e.g., a mixing port of a multi-port valve, a multi-port mixing manifold, etc.). A controller controls the operation of the system to draw precise amounts of organic solvents and internal standards as needed for mixing and to control the timing of delivery to the scanning nozzle for distribution on one or more surfaces of the semiconductor wafer. The system provides automated calibration of the organic analysis system by allowing different concentrations of internal standards to be introduced into the organic solvents to generate high-precision calibration profiles. Furthermore, the system can generate a variety of organic scanning solutions using any combination of solvents and analytes fluidly connected to the pump system. In-line generation of organic scanning solutions reduces the possibility of environmental contamination of the semiconductor wafer or the chemicals used for its analysis, while also allowing precise control of the fluid directed to the scanning nozzle, which can allow the use of small amounts of organic solvents (e.g., thereby improving analytical capabilities for lower contaminant detection limits).

[0050] Exemplary Implementation Figures 1A to 16 This illustration shows various aspects of a system (“System 100”) for integrated disassembly and scanning of a semiconductor wafer to recover organic and inorganic contaminants from the wafer, according to various embodiments of the present invention. System 100 generally includes a chamber 102, a scanning arm assembly 104, and a fluid delivery system 106 (e.g., at least partially in…). Figures 9A to 10 (As shown in the diagram), to facilitate at least the decomposition and scanning process of the semiconductor wafer 108 (sometimes referred to herein as "wafer") by introducing a decomposition fluid into the wafer and by introducing and removing a scanning fluid from the surface of the wafer 108. In embodiments, the system 100 may facilitate the scanning process before or without introducing the decomposition fluid into the wafer, which may avoid the decomposition of organic contaminants prior to scanning (e.g., to maintain subsequent identification of organic contaminants). The chamber 102 provides an environment for each of the single chamber occupancy area for wafer decomposition and wafer scanning, and includes a wafer support 110 for holding the wafer 108 and a motor system 112 to control the vertical position of the wafer support 110 relative to the chamber 102 (e.g., within the chamber 102, above the chamber 102, etc.) to position the wafer 108 for the decomposition and scanning process or other processes of the system 100. The motor system 112 further provides rotational control of the wafer support 110 to rotate the wafer 108 during various processes of the system 100, and provides rotational and vertical control of the scan arm assembly 104 to position the nozzle of the scan arm assembly 104 above the wafer 108 during the scanning process and to position the nozzle cleaning rinse station 114. In an embodiment, the wafer support 110 includes a vacuum stage to hold the wafer 108 fixed relative to the wafer support 110, for example, during movement of the wafer support 110.

[0051] Chamber 102 includes a chamber body 116 defining an internal region 118 for receiving a wafer 108 for processing. A boss 120 extends into the internal region 118 between a top 122 and a bottom 124 of the chamber body 116. In one embodiment, the chamber body 116 defines a first aperture 126 at the top 122 through which the wafer 108 can be received into the internal region 118. In another embodiment, the boss 120 defines a second aperture 128 in the internal region 118 at an intermediate portion between the top 122 and the bottom 124 (e.g., between the first aperture 126 and the bottom 124). Figure 1ADuring the exemplary operation shown, system 100 can receive semiconductor wafer 108 onto wafer support 110, for example, by operation of the automated arm 50 to select wafer 108 from a front-end unification pod (FOUP) or other location and introduce the selected wafer 108 onto wafer support 110 (e.g., centered on wafer support 110). Motor system 112 can position wafer support 110 at, above, or near the top 122 of chamber body 116 to allow automated arm 50 to approach wafer support 110 and place wafer 108 onto wafer support 110. For example, during wafer 108 loading, wafer support 110 may be located at a first position adjacent to first aperture 126 (e.g., Figure 2A (As shown). In one embodiment, the first position of the wafer support 110 is positioned outside the inner region 118 (e.g., extending through the first aperture 126) to receive the wafer 108.

[0052] System 100 may include a cover 130 to isolate an inner region 118 from an outer region 132, thereby facilitating wafer decomposition while limiting the exposure of decomposition fluid to the outer region 132. For example, the cover 130 may have dimensions and shape that cover the first aperture 126 when positioned above it. The cover 130 may be positioned in an open position (e.g., Figure 1A (as shown) and the closing position (e.g., Figure 1B The open position can be used during wafer loading to provide access to the automated arm, during the scanning process, and during the wafer unloading process. In one embodiment, when the wafer support 110 is in a first position adjacent to the first aperture 126, the cover 130 is in an open position to provide access to the wafer 108 through the nozzle of the scanning arm assembly 104. During the wafer decomposition process, a closed position can be used to prevent decomposition fluid from leaving the chamber 102 through the first aperture 126. In one embodiment, at least a portion of the cover 130 contacts the chamber body 116 to isolate the inner region 118 from the outer region 132. The wafer 108 is moved to a second position within the inner region 118 by the vertical position of the wafer support 110 controlled by the motor system 112. For example, the motor system 112 moves the wafer support 110 to the second position within the inner region 118 before or during the movement of the cover 130 from the open position to the closed position. In one embodiment, the cover 130 is positioned adjacent to the chamber body 116 and is rotatably coupled to the mounting base 134 via the cover arm 136 to allow the cover 130 to change between an open position and a closed position.

[0053] After the wafer 108 is brought to the wafer support 110, the system 100 can be switched to a disassembly configuration to facilitate the disassembly of one or more surfaces or edges of the wafer 108. For example, the system 100 can support the disassembly of the wafer 108 prior to scanning for inorganic contaminants, although the disassembly can be used to detect specific organic contaminants. Alternatively or additionally, the system 100 can be switched to a scanning configuration (e.g., the scanning configuration further described herein) without a prior disassembly process. For the disassembly configuration, the motor system 112 can move the wafer support 110 from a first position to a second position so that the wafer 108 is adjacent to the second aperture 128 of the boss 120 (e.g., as shown in the image). Figure 1B and Figure 2B (As shown). In one embodiment, chamber 102 includes an atomizer 138 positioned between a first orifice 126 and a second orifice 128, which sprays a decomposition fluid onto the surface of wafer 108 when wafer support 110 is positioned in a second position by motor system 112. Thus, the decomposition fluid is directly sprayed into chamber 102 by atomizer 138. The decomposition fluid can be supplied to atomizer 138 via one or more fluid lines from fluid delivery system 106, for example, through conduit 140 into pre-chamber 142 housing at least a portion of atomizer 138. In another embodiment, at least a portion of atomizer 138 is at least partially disposed within the wall of chamber 102. For example, the chamber body 116 may define an orifice 144 between the inner region 118 and the anterior chamber 142, where the outlet of the atomizer 138 may distribute the gas-atomized decomposition fluid to the inner region between the first orifice 126 and the second orifice 128 to cover and decompose at least the upper surface 146 of the wafer 108.

[0054] In one embodiment, during decomposition, chamber 102 generates pressure beneath wafer 108 to prevent decomposition fluid from flowing between the edge of wafer 108 and boss 120. For example, chamber 102 may include a gas outlet port 148 located within an inner region 118 between a second orifice 128 and the bottom 124 of chamber body 116 to introduce gas or other fluid into the inner region 118 during the introduction of decomposition fluid from atomizer 138 into the inner region 118. Gas from gas outlet port 148 may be introduced at a pressure greater than that of the gas-atomized decomposition fluid supplied from atomizer 138 to provide upward flow of gas through the second orifice 128 (e.g., between the edge of wafer 108 and boss 120), thereby preventing decomposition fluid from flowing beneath wafer 108. In one embodiment, system 100 includes a controller coupled to a gas source to introduce gas from the gas source to a gas outlet port 148 during the introduction of decomposition fluid onto the surface 146 of wafer 108 by atomizer 138 when wafer support 110 is positioned in a second location. For example, gas may be supplied to gas outlet port 148 via a fluid line through conduit 140 and pre-chamber 142. In another embodiment, when the atomized decomposition fluid is present in the internal region 118, motor system 112 induces rotation of wafer support 110 during the decomposition process to rotate wafer 108.

[0055] Chamber 102 facilitates the removal of fluid from the internal region 118 through one or more channels in fluid communication with one or more discharge sections within the chamber body 16. Such fluids may include, for example, excess decomposition fluid, silicon tetrafluoride (SiF4), gas supplied by the gas outlet port 148, water, water vapor, rinsing fluid, or other fluids. For example, chamber body 116 may include (e.g., via interlocking recesses) a base 200, a middle section 202, and a top 204 stacked on top of each other (e.g., in…). Figure 2B(As shown in the diagram). The base 200 may define one or more discharge sections 206 (e.g., discharge sections 206A and 206B) that provide an outlet via a discharge conduit from the interior region 118 of the chamber 102 to one or more discharge containers (not shown). In one embodiment, discharge section 206A is fluidly coupled to a passageway in the chamber body 116 to provide a pathway to discharge section 206A for fluid located between a first orifice 126 and a second orifice 128. For example, the intermediate portion 202 may define one or more channels 208, at least a portion of which extends through the intermediate portion to be vertically aligned with at least a portion of at least one or more channels 210 formed by the base 200. Channel 208 may be positioned between the inner surface 212 of chamber body 116 (e.g., top 204, middle portion 202, or a combination thereof) and boss 120 to allow fluid held in the inner region 118 between cover 130 and the second aperture 128 or the surface 146 of wafer 108 to flow into channel 208, through to reach channel 210, and out from discharge portion 206A. In an embodiment, discharge portion 206B allows rinsing fluid or other fluids to exit the inner region 118 of chamber 102 (see herein reference) during the rinsing process. Figure 2C describe).

[0056] Following the disassembly of wafer 108, or in embodiments where prior disassembly is not required, system 100 can switch to a scanning configuration to allow scan arm assembly 104 to approach surface 146 of wafer 108 without transferring wafer 108 to a separate scanning system. To switch to the scanning configuration, motor system 112 can position wafer support 110 from a second position adjacent to second aperture 128 to a first position adjacent to first aperture 126, or closer to top 122 of chamber body 116, to allow scan arm assembly 104 to approach surface 146 of wafer 108. Alternatively, if a disassembly process is not employed for a particular scan, motor system 112 can hold wafer 108 close to top 122 after loading.

[0057] The scanning arm assembly 104 generally includes a rotatable arm support 300 coupled to a nozzle housing 302 that supports a nozzle 304 configured to introduce scanning fluid into and recover scanning fluid from the surface 146 of the wafer 108. The motor system 112 can control rotation of the rotatable arm support 300, vertical positioning of the rotatable arm support 300, or combinations thereof, to move the nozzle housing 302 and nozzle 304 from one or more locations at the rinsing station 114 (e.g., ...). Figure 2A As shown, it is positioned at one or more locations adjacent to or above wafer 108 (e.g., Figure 4 (As shown in the image). This article refers to... Figures 7A to 7DAn exemplary embodiment of the nozzle 304 is further described. In one embodiment, when the wafer support 110 is positioned in a first position by the motor system 112, the rotatable arm support 300 rotates or otherwise moves the nozzle 304 to position the nozzle 304 adjacent to the wafer 108; and when the wafer support 110 is positioned in a second position by the motor system 112, the rotatable arm support 300 rotates or otherwise moves the nozzle 304 to position the nozzle 304 from an open position to a closed position outside the path of the cover 130.

[0058] Using nozzles 304 located adjacent to or above wafer 108 (e.g., Figure 4 As shown, the fluid delivery system 106 can control the direction of scanning fluid to and from the nozzle 304 to facilitate the scanning process of the surface 146 of the wafer 108. The scanning fluid may include, for example, one or more organic solvents for recovering organic contaminants from the wafer 108, one or more aqueous solutions for recovering inorganic contaminants from the wafer 108, or combinations thereof. (See reference...) Figures 7A to 7DAn exemplary embodiment of nozzle 304 is illustrated. Nozzle 304 is configured to deliver a fluid flow across surface 146 of wafer 108, which can cover a larger surface area of ​​wafer 108 in a shorter time than moving a point-sized droplet on wafer 108. The fluid flow is guided by nozzle 304 over surface 146 of wafer 108 to controllably scan a desired surface area of ​​wafer 108. In an embodiment, nozzle 304 guides the fluid flow over substantially the entire surface 146 during a single rotation of wafer 108. In an embodiment, a wedge-shaped portion of surface 146 (e.g., a sector of wafer 108 or a portion thereof) can be scanned during a portion of a single rotation of wafer 108. Nozzle 304 includes nozzle body 500 defining inlet port 502, outlet port 504, first nozzle port 506, second nozzle port 508, and nozzle shroud 510. Nozzle 304 may also include one or more mounting holes for mounting nozzle 304 within nozzle housing 302. Inlet port 502 and outlet port 504 receive fluid lines to guide fluid into and out of nozzle 304 during operation of system 100. For example, nozzle 304 receives fluid by the action of a first pump (e.g., an injection pump) that pushes fluid from a holding line or loop (e.g., a sample holding loop) into nozzle 304. At nozzle 304, the fluid is guided into inlet port 502 and through a channel 503 in nozzle body 500 that fluidly connects inlet port 502 and first nozzle port 506. The fluid is then deposited onto surface 146 of wafer 108 through first nozzle port 506. The fluid flows continuously along surface 146 of wafer 108 via a channel 512 defined between nozzle shroud 510 and nozzle body 500, where it is subsequently removed from surface 146 of wafer 108. For example, fluid can be removed from surface 146 via the action of a second pump (e.g., an injection pump), which draws the fluid through a second nozzle port 508 at the end of channel 512 remote from the first nozzle port 506, through a fluid communication between outlet port 504 and the second nozzle port 508, and through nozzle body 500. Thus, fluid is allowed to contact wafer 108 during its transport from the first nozzle port 506 to the second nozzle port 508. Channel 512 allows a volume of fluid to travel across the wafer with the aid of nozzle shroud 510. In an embodiment, channel 512 has a volume of approximately 300 μL. However, the volume of channel 512 is not limited to 300 μL and can include volumes less than 300 μL and greater than 300 μL. For example, the volume of channel 512 may depend on the size of the wafer 108 processed by system 100 to provide the required amount of fluid (e.g., scanning fluid) to surface 146. The length of channel 512 can be selected based on the size of wafer 108 processed by system 100, wherein in an embodiment, channel 512 has a length approximately equal to the radius of wafer 108.In the implementation, the length of channel 512 can range from approximately 20 mm to approximately 500 mm. For example, the length of channel 512 can be approximately 150 mm (e.g., accommodating a wafer with a diameter of 300 mm), approximately 100 mm (e.g., accommodating a wafer with a diameter of 200 mm), or approximately 225 mm (e.g., accommodating a wafer with a diameter of 450 mm). Other nozzle designs and configurations can be used depending on the type of scanning solution used.

[0059] A nozzle shroud 510 extends from the nozzle body 500, adjacent to each of the first nozzle port 506 and the second nozzle port 508, and defines a channel 512 between the nozzle shroud 510 and the nozzle body 500 between the first nozzle port 506 and the second nozzle port 508. The nozzle shroud 510 may further extend to include each of the first nozzle port 506 and the second nozzle port 508 within the channel 512, such that the nozzle shroud 510 surrounds the first nozzle port 506 and the second nozzle port 508 within the nozzle shroud 510 (e.g., as shown in the image). Figure 7C (As shown). In one embodiment, the nozzle body 500 includes substantially opposing sidewalls 514 that longitudinally extend across the nozzle 304. Each of the opposing sidewalls 514 includes a tapered wall portion 516 coupled to or otherwise extending to provide an opposing portion 518. In one embodiment, the opposing portion 518 is substantially vertical to form at least a portion of the nozzle shroud 510. The nozzle 304 may be formed from a single unit, or portions of the nozzle 304 may be separately formed and fused together or otherwise coupled to each other. In one embodiment, the nozzle 304 is formed of chlorotrifluoroethylene (CTFE), polytetrafluoroethylene (PTFE), or a combination thereof.

[0060] The channel 512 of nozzle 304 has an elongated shape with rounded ends 513A and 513B. Compared to angled ends, rounded ends promote superior fluid handling characteristics, for example, by providing more consistent delivery and absorption of fluid via nozzle 304. In one embodiment, a first nozzle port 506 (where fluid is dispensed from nozzle 304 onto wafer 108) is positioned tangentially to the edge of the rounded end 513A of channel 512. This positioning helps to disconnect the fluid flow from the first nozzle port 506 once all fluid has been introduced into wafer 108, while avoiding the fragmentation of fluid on the surface of wafer 108. In another embodiment, a rotatable arm support 300 rotates nozzle housing 302 to extend the rounded end 513A of nozzle 304 over the edge of wafer 108 (e.g., following a scanning process), thereby facilitating the intake of fluid flow through the second nozzle port 508 via operation of fluid delivery system 106. For example, as Figure 6As shown, at a first time (t1), the nozzle is positioned in a first position (e.g., a scanning position) such that channel 512 is positioned above surface 146. Then, the rotatable arm support 300 rotates the nozzle housing 302 at a second time (t2) such that the rounded end 513A extends past the edge of wafer 108 (e.g., overhanging the edge) in a second position rotated approximately 7 degrees from the first position. In an embodiment, the second nozzle port 508 is positioned approximately at the center of the rounded end 513B, away from the first nozzle port 506. Positioning the second nozzle port 508 at the center of the rounded end 513B, rather than tangent to the edge of the rounded end 513B, facilitates fluid absorption while simultaneously promoting fluid flow retention on surface 146 without interruption, enabling precise control of fluid movement on surface 146 of wafer 108.

[0061] The position of nozzle 304 above surface 416 of wafer 108 can affect the amount of fluid supported within channel 512 during the scanning process. System 100 may include a zeroing process to ensure a desired height above surface 416 is achieved before introducing scanning fluid into the nozzle, thereby facilitating the guidance of a desired amount of fluid along surface 146 of wafer 108 by nozzle shroud 510. Regarding Figures 8A to 8C An example zeroing process is illustrated, showing various aspects of the scan arm assembly 104 according to various embodiments of the invention. The scan arm assembly 104 facilitates the alignment of the nozzle 304 relative to the wafer 108, such that the first nozzle port 506 and the second nozzle port 508 are flush with the surface 146 of the wafer 108 to which fluid will be applied and removed. The system 100 can perform alignment or leveling processes on each wafer 108 processed by the system 100 (e.g., between scanning a first wafer removed from the chamber 102 and scanning a second wafer introduced into the chamber 102), or, as needed, ensure that the nozzle 304 is horizontal relative to the wafer 108 held by the chamber 102, for example, before the next scanning process. Generally, the nozzle 304 is movably coupled to the nozzle housing 302 to allow the nozzle 304 to have a range of motion relative to the nozzle housing 302 while being supported by the nozzle housing 302. The nozzle housing 302 defines an orifice 520, which, when in an extended position (e.g.) Figure 8A (as shown) and retraction position (e.g.) Figure 8B and Figure 8CWhen switching between the extended and retracted portions (as shown), at least a portion of the nozzle 304 may pass through the orifice. For example, the top of the nozzle 304 may be located within the nozzle housing 302, allowing additional portions of the nozzle 304 to be introduced into the interior of the nozzle housing 302 via the orifice 520 as the nozzle 304 transitions from an extended portion to a retracted portion. For example, when the nozzle 304 is positioned to contact the zeroing surface 522, the nozzle cover 128 may contact the surface 522 to push the nozzle 304 into a horizontal position relative to the surface 522. The nozzle housing 302 may then be actuated to lock the nozzle 304 in place, thereby maintaining the nozzle 304 horizontal with respect to the surface 522 as the nozzle 304 rises from the surface 522 (e.g., to the scanning position). The nozzle housing 302 may include mechanical, electrical, or electromechanical locking devices to releasably secure the nozzle 304 relative to the nozzle housing 302. In an embodiment, surface 522 includes surface 146 of wafer 108, surface of wafer support 110 (e.g., before wafer 108 is loaded onto wafer support 110), surface of rinsing station 114, or other surfaces having a structure consistent with the horizontal characteristics of the semiconductor wafer, such that when nozzle 304 contacts surface 522, nozzle cover 128, first nozzle port 506, second nozzle port 508, etc., are correctly positioned relative to wafer 108.

[0062] In one embodiment, the nozzle mounting assembly 500 includes a nozzle housing 302 for coupling a nozzle 304 to a rotatable arm support 300. Alternatively or additionally, one or more different scanning nozzles may be directly coupled to the rotatable arm support 300, or different nozzle housings may be used to facilitate coupling to the rotatable arm support 300. As shown, the nozzle 304 may be coupled to the nozzle housing 302 via a coupler 524 defining an orifice 526 to interact with a protrusion 528 of the nozzle housing 302. The protrusion 528 may include a fastener, pin, or other structure having a width or diameter smaller than that of the orifice 526, such that when the scanning arm assembly 104 is in a first state (e.g., a leveling state), the top of the orifice 526 is located on the protrusion 528, which provides a lower or extended position of the nozzle 304 relative to the nozzle housing 302 via the coupler 524 (e.g., as shown). Figure 8A (As shown in the diagram). System 100 can lower the nozzle housing 302 by causing the rotatable arm support 300 to bring the nozzle 304 into contact with the surface 522 (e.g., as shown in the diagram). Figure 8BThe alignment or leveling process is achieved by (as shown). For example, when the nozzle 304 contacts the surface 522, the coupler 524 is pushed upward relative to the protrusion 528 such that the protrusion 528 does not support the coupler 524 by contact with the top of the orifice 526. After the nozzle 304 contacts the surface 522, the nozzle 304 is in a retracted position, and the system 100 can actuate the locking structure 530 (e.g., integrated within the nozzle housing 302) to fix the position of the nozzle 304 relative to the nozzle housing 302. For example, the coupler 524 may include ferrous material fixed by a magnetic field generated by an electromagnet incorporated in the locking structure 530. Although the electromagnet is shown as part of the locking structure 530 in the exemplary embodiment, other locking structures may also be used, including but not limited to pneumatic electromagnetic actuators, mechanical locks, electromechanical locks, etc.

[0063] The nozzle housing 302 may include sensors for monitoring the position of the nozzle 304 relative to the nozzle housing 302, such as determining whether the nozzle 304 is in an extended, retracted, or other position. For example, in one embodiment, the nozzle housing 302 includes a sensor 532 to detect the presence or absence of the coupler 524 and generate or stop generating a signal received by the controller of the system 100. The sensor 532 may include a light source on a first side of the coupler 524 and a detector on a second, opposite side of the coupler 524. The coupler 524 may include an indexing slit, a portion of which passes between the light source and the detector of the sensor 532. When the nozzle 304 is in the extended position (e.g., the locking structure 530 is not engaged), light from the light source passes through the indexing slit of the coupler 524 and is detected by the detector on the other side of the coupler 524. The sensor 532 then outputs a signal or stops outputting a signal indicating that light has been detected, which indicates to the system 100 that the nozzle 304 is in the extended position. When nozzle 304 is in the retracted position, for example after being leveled on surface 522, the body of coupler 524 is positioned between the light source and detector of sensor 532, blocking light from reaching the detector. Sensor 532 will output a signal or stop outputting a signal indicating that no light source was detected. This signal, or its absence, indicates to system 100 that nozzle 304 is in the retracted position (e.g., supported in nozzle housing 302 by locking structure 530). Operation of sensor 532 can provide system checks to ensure that nozzle 304 remains in the retracted and leveled position after a period of operation. Changes in the output from sensor 532 may indicate that a releveling process may be appropriate, locking structure 530 should be evaluated, etc. Alternatively, the indexing notch can be repositioned such that when nozzle 304 is in the retracted position, the detector is aligned with the indexing notch, and when nozzle 304 is in the extended position, the body of coupler 524 blocks light.

[0064] When the nozzle 304 is leveled relative to the surface 522 and locked in place via the locking structure 530, the rotatable arm support 300 can lift the nozzle 304 from the surface 522 (e.g., as shown in the image). Figure 8C (as shown in the diagram), while keeping the nozzle 304 in the leveled position. The rotatable arm support 300 can then position the nozzle 304 in the scanning position, or otherwise move the nozzle 304 (e.g., if the surface 522 used to level the nozzle 304 is the support 106, then the wafer 108 is allowed to be positioned on the wafer support 110).

[0065] Nozzle housing 302 may include one or more sensors to facilitate the introduction and removal of fluid from nozzle 304. For example, in one embodiment, nozzle housing 302 includes one or more sensors (sensors 534A and 534B shown) adjacent to or more adjacent to the inlet port 502 and outlet port 504 of nozzle 304 to control the operation of fluid delivery system 106 to control fluid inflow and outflow from nozzle 304. Sensors 534A and 534B may include optical sensors, capacitive sensors, ultrasonic sensors, or other sensors, or combinations thereof, to sense the flow or absence of liquid within the fluid line of system 100. For example, system 100 may include fluid lines from the fluid delivery system coupled to fluid line couplers 536A and 536B, through which sensors 534A and 534B can detect the presence or absence of fluid, respectively. An output signal or its absence may control the operation of one or more components of fluid delivery system 106, including but not limited to pumps for introducing fluid into or removing fluid from nozzle 304.

[0066] System 100 facilitates the rinsing process of wafer 108 and nozzle 304, for example, after a scanning process. (See reference...) Figure 2C The chamber 102 is shown in a rinsing configuration to facilitate rinsing of the wafer 108. To switch to the rinsing configuration, the motor system 112 can position the wafer support 110 from a first position (e.g., a scan position) adjacent to the first aperture 126 or another position to a rinsing position located between the boss 120 and the bottom 124 of the chamber body 116. Rinsing fluid can be directed to the wafer 108, for example, through a rinsing port on the nozzle housing 302 or otherwise provided in the system 100, allowing the motor system 112 to rotate the wafer 108 to induce the removal of the rinsing fluid. The rinsing fluid can then impinge on the interior of the chamber body 116 and flow to the discharge section 206B to exit the interior region 118 of the chamber 102. To clean the nozzle 304, the rotatable arm support 300 can position the nozzle 304 relative to one or more grooves of the rinsing station 114. For example, the rinsing station 114 may include a first groove 115A (e.g., in...). Figure 5(as shown in the figure), the first groove has an elongated channel into which rinsing fluid is introduced from a rinsing fluid source to interact with the nozzle shroud 510, the channel 512, or other portions of the nozzle 304. Figure 1A and Figure 1B The image shows a nozzle 304 positioned in a first groove 115A. The rinsing station 114 may also include a second groove 115B having an elongated channel coupled to a dry gas source (e.g., nitrogen or other inert gas) to introduce the dry gas into the elongated channel to impinge on the nozzle 304. Figure 5 In the middle, nozzle 304 is shown positioned within the second groove 115B.

[0067] Now for reference Figures 9A to 10 This describes an exemplary fluid delivery system 106 of system 100 according to various embodiments of the present invention. For example, fluid delivery system 106 can facilitate the preparation of chemical reagent blanks for analysis by an analytical system, facilitate the preparation of decomposition fluid for use in chamber 102 as needed and in desired proportions, facilitate the preparation of scanning fluid for use in chamber 102 as needed and in desired proportions, and facilitate combinations thereof. As shown, fluid delivery system 106 includes a pump system comprising pumps 600, 602, 604, 606, 608, 610, and 612 to draw and push fluid through the fluid delivery system to interact with other components of system 100 (e.g., nozzle 304), analytical system, etc. The pump system is shown as incorporating an injection pump; however, system 100 may utilize different types of pumps or systems, combinations of pump types or systems, etc. Figure 10 An exemplary configuration of the fluid delivery system 106 is shown to introduce decomposition fluid into the atomizer 138 of the chamber 102 during the decomposition process of the wafer 108. The pump 612 can draw hydrofluoric acid (HF) or other decomposition fluid from the decomposition fluid source 613 into a holding line (e.g., decomposition fluid holding circuit 614) by means of valves 616 in a first configuration and valve 618 in a first configuration. In a second configuration of valve 616, gas from gas source 619 can be introduced into the fluid line holding the decomposition fluid to provide a barrier between the working fluid used to push the decomposition fluid to the atomizer 138. In the second configuration of valve 618, pump 612 can draw in a working solution (e.g., deionized water or other fluid), thereby switching valve 618 to a first position, and valve 616 can switch to a third configuration to provide fluid communication between pump 612 and atomizer 138, thereby pushing the working solution against the decomposition fluid held in decomposition fluid holding circuit 614 (e.g., via any intermediate air gap) to direct the decomposition fluid to atomizer 138. After wafer 108 is decomposed, system 100 can scan wafer 108 to identify impurities.

[0068] refer to Figure 9A This illustrates a fluid delivery system 106 in an exemplary chemical load configuration. Pumps 604, 606, and 608, in a first valve configuration, draw chemicals from chemical sources 620, 622, and 624, respectively, via valve 626. The chemicals may include, for example, hydrofluoric acid (HF), hydrogen peroxide (H2O2), deionized water (DIW), one or more organic solvents, or other fluids. In a second valve configuration of valve 626… Figure 9A In the diagram, each of pumps 604, 606, and 608 is fluidly connected to a fluid line connector (e.g., manifold 628 or other connector), whereby the chemicals drawn by each pump are combined and allowed to mix. The combined fluid is directed to valve 630, which, in a first valve configuration, directs the combined fluid to a holding line (e.g., holding loop 632). In an embodiment, a system controller independently controls the operation of each of pumps 604, 606, and 608 to control the flow rate of each fluid delivered by the respective pump, thereby providing a controlled mixed fluid composition that is then directed to holding loop 632 after mixing. In an embodiment, a first fluid mixture can be used to interact with wafer 108 during a first scan process, and a second fluid mixture can be prepared as needed using different operational controls of pump systems 604, 606, and 608 to introduce a second fluid mixture that interacts with wafer 108 during a second scan process. Additional fluid mixtures can be prepared as needed and directed to wafer 108 as required. In one implementation, the holding loop 632 has a volume that supports scanning processes on multiple wafers without refilling. For example, a scanning solution can be prepared, a portion of which (e.g., a "blank" sample) can be sent to the analysis system to verify that the solution's use on the wafers is within operational constraints. The remaining scanning solution in the holding loop 632 can then be used for multiple scanning processes, wherein the scanning solution has been pre-validated for suitability. Reference Figure 9B An exemplary loading of a chemical blank sample for analysis is shown.

[0069] refer to Figure 9BThe illustration shows a fluid delivery system 106 in an exemplary nozzle bypass configuration for delivering a chemical blank sample for analysis without passing the blank sample through nozzle 304. In the nozzle bypass configuration, pump 610 is in fluid communication with holding circuit 632 (e.g., valve 630 is in a second valve configuration) to push fluid held in holding circuit 632 to a sample holding line (e.g., sample holding circuit 634) via valve 636 in a first valve configuration and valve 638 in a first valve configuration. When fluid is isolated in sample holding circuit 634, fluid delivery system 106 can be switched to a sample injection configuration to transfer the sample to an analytical system for analysis. The analytical system may include, but is not limited to, inductively coupled plasma spectrometry (ICP-S) instruments for trace element composition determination, ionization sources (e.g., electrospray ionization, atmospheric pressure chemical ionization (APCI), or other ionization sources) or the like, or combinations thereof, that facilitate organic chemical analysis.

[0070] refer to Figure 9C The diagram shows a view of the fluid delivery system 106 in an exemplary chemical injection configuration, thereby maintaining loop 632 in fluid communication with one or more delivery mechanisms. For example, in one embodiment, valve 638 is in a second configuration (in... Figure 9C (shown as dashed lines), thereby fluidly coupling the holding circuit 632 to a gas transfer source (e.g., a nitrogen pressure source 640) to push the sample held in the holding circuit 632 to the transfer line 642 via valve 644 in the first valve configuration and valve 646 in the first valve configuration, and then into the sample analysis system. In one embodiment, valve 638 is in a third valve configuration ( Figure 9C (as shown by the solid line in the figure), to be transmitted via valve 648, which is configured as the first valve. Figure 9C (As shown by the solid line in the diagram) The holding circuit 632 is fluidly coupled to the pump 602. Valve 648, in a first valve configuration, pushes the sample held in the holding circuit 632 via valves 644 and 646 in a first valve configuration to the transfer line 642, and then into the sample analysis system. Pump 602 can use a working solution (e.g., deionized water from DIW source 650) to push the sample to the transfer line 642. In an embodiment, the fluid delivery system 106 introduces a fluid gap between the working fluid and the sample, for example, by introducing air bubbles (e.g., from nitrogen pressure source 640) into the holding circuit 632 before pushing the working solution. In an embodiment, the fluid delivery system 106 includes a sensor 652 adjacent to the transfer line 642 to detect the presence of fluid within the transfer line 642. For example, sensor 652 can detect the rear end of a sample pushed from holding circuit 632 (e.g., by detecting air bubbles in the line), where the sensor signal or the absence of such a signal can notify the controller of fluid delivery system 106 to switch the configuration of valves 646 and 648 to a second valve configuration. Figure 9C(Seen in dashed lines), thereby fluidly connecting pump 602 to transfer line 642 via fluid line 654. In this configuration, other parts of the fluid delivery system 106 are isolated from the sample-to-sample analyzer transfer to allow those other parts to be rinsed during sample transfer.

[0071] refer to Figure 9D The fluid delivery system 106 is shown in an exemplary nozzle loop load configuration, whereby the retaining circuit 632 is in fluid communication with a nozzle retaining line (e.g., nozzle retaining circuit 656) to prepare for the introduction of fluid into the nozzle 304. As described herein, the composition of the fluid may depend on the type of contaminants to be recovered from the wafer 108, wherein organic solvents or solutions may be used to recover organic contaminants, aqueous or acidic solutions may be used to recover inorganic contaminants, or combinations thereof. In the nozzle loop load configuration, the pump 610 is in fluid communication with the retaining circuit 632 (e.g., with valve 630 in a second valve configuration) to push the fluid held in the retaining circuit 632 to the nozzle retaining circuit 632 via valve 636 in a second valve configuration and valve 658 in a first valve configuration. In an embodiment, the nozzle retaining circuit 632 has a volume of approximately 500 μL, while the retaining circuit 632 has a volume of approximately 5–20 mL to allow the nozzle retaining circuit 632 to be filled by the operation of pumps 604, 606, 608 for each preparation of scan solution. When the fluid is isolated in the nozzle holding circuit 656, the fluid delivery system 106 can be switched to a nozzle load configuration to deliver fluid to the nozzle 304 for the scanning process of the wafer 108 or to remove a blank sample from the nozzle (e.g., to direct the fluid to an inert surface, such as the surface of the rinsing station 114, and to remove the sample from the inert surface for analysis).

[0072] refer to Figure 9E A fluid delivery system 106 is shown in an exemplary nozzle-loaded configuration, wherein a pump 600 is in fluid communication with a nozzle holding circuit 656 and a nozzle 304 via a valve 658 in a second valve configuration to push fluid from the nozzle holding circuit 656 to the nozzle 304. In an embodiment, during the scanning process, the wafer 108 remains stationary while the nozzle 304 is loaded by the pump 600. In an embodiment, the system 100 performs a zeroing operation on the nozzle 304 before filling it with fluid (e.g., see reference 100). Figures 8A to 8C(Described). The nozzle is then positioned at a scanning position above wafer 108, where pump 600 is operable to push fluid from nozzle holding circuit 656 to inlet port 506 of nozzle 304, through nozzle body 500 to first nozzle port 506, and onto surface 146 of wafer 108 (or an inert surface for nozzle blank analysis). In one embodiment, the controller of fluid delivery system 106 controls the operation of pump 600 based on sensing signals from sensors 534A and 534B, or based on the absence of sensing signals from sensors 534A and 534B, which detect the fluid being introduced to nozzle 304 or indicate the presence or absence of fluid leaving nozzle 304. In one embodiment, sensor 534A detects the leading edge of the fluid, causing pump 600 to reduce the flow rate of fluid introduced into nozzle 304 (e.g., from approximately 50 μL / min to 10-20 μL / min). In one embodiment, pump 600 operates to fill nozzle 304 until the rear end of the fluid is registered by sensor 534B. Pump 600 can then operate for a period of time to push the rear end of the fluid into nozzle 304 and then stop operating, thereby positioning all the fluid previously held by nozzle holding circuit 656 on surface 146 of wafer 108 (or on an inert surface if nozzle blanking is being performed). The fluid is then supported on surface 146 by nozzle 304. In one embodiment, a portion of the fluid may protrude from nozzle shroud 510 but may be held in contact with the remaining fluid within channel 512 by, for example, adhesive forces. System 100 then switches to scanning nozzle 304 over surface 146 of wafer 108. During the scanning process, motor system 112 rotates wafer 108 (e.g., at about 2 rpm), thereby transferring the fluid supported by nozzle 304 over surface 146 of wafer 108. In one implementation, during a single rotation of wafer 108, the fluid interacts with substantially the entire surface 146 of wafer 108; however, additional rotations can be performed. For example, the scanning process may include rotating wafer 108 twice by motor system 112 to allow the fluid to contact the entire surface of wafer 108 twice. After scanning, the nozzle may be rotated such that the tip of the nozzle extends beyond the edge of the wafer (e.g., as referenced). Figure 6 (as described) to assist in drawing fluid from the surface into the nozzle 304 via the second nozzle port 508.

[0073] refer to Figure 9FThe diagram illustrates a fluid delivery system 106 in an exemplary recovery configuration, where a pump 602 is in fluid communication with a nozzle 304 via a valve 648 in a first configuration, a valve 638 in a third configuration, and a valve 644 in a second configuration. In the recovery configuration, the pump 602 operates to draw fluid from the surface 146 of the wafer 108 through a second nozzle port 508 and via an outlet port 504, whereby the fluid is drawn into a sample holding circuit 634. Alternatively or additionally, a single port on the nozzle can be used to introduce fluid into the wafer 108 and to aspirate fluid from the wafer after or during scanning. Sensors (e.g., sensor 660) can be used to control the operation of the pump 602 by means of the outputs of sensors 534A / 534B, similar to the control of the pump 600. For example, sensor 660 can detect the downstream end of the fluid flowing into the sample holding circuit 634, which can signal the pump 602 to stop operation (e.g., via a controller of the fluid delivery system 106). Once the fluid is held in the sample holding circuit 634, the fluid delivery system 106 can switch to the reference circuit. Figure 9C The described chemical injection configuration introduces fluid into the sample analyzer via delivery line 642. In an embodiment, sample holding circuit 634 has a volume (e.g., 1.5 mL) larger than the volume of fluid supplied to nozzle 304 (e.g., 500 μL) to allow for complete fluid recovery after scanning.

[0074] VPD-free detection of organic pollutants While VPD technology is suitable for the detection and identification of metallic impurities, conventional VPD technologies are significantly limited in their application to the recovery and identification of organic contaminants or residues on or within semiconductor wafers (which can adversely affect semiconductor processing). For example, plasticizers (such as dibutyl phthalate and dioctyl phthalate) can slow silicon dioxide growth. Organophosphates can cause unintentional doping. Amines can neutralize photogenerated acids. Antioxidants (such as butylated hydroxytoluene and butylated hydroxyanisole) can degrade gate oxide structures on wafers. Surfactants (such as cetrimonium bromide and sodium lauryl sulfate) can add hydrophilicity to wafers. The decomposition fluids used in conventional VPD technologies can destroy or otherwise react with organic molecules, thus preventing the identification of original contaminants and the determination of their concentration on semiconductor wafers. Similarly, certain analytical systems used in VPD systems are not well-suited for the recovery and identification of organic contaminants or residues. For example, inductively coupled plasma systems used in identifying metallic impurities can prevent the identification of arrangements of elements present in organic samples, which could be used to determine the proper identity of the original organic molecules.

[0075] Figures 11A to 12Aspects of an automated system (“System 1100”) for recovering and identifying organic contaminants (e.g., organic residues) on a semiconductor wafer, according to various embodiments of the present invention, are illustrated. In one embodiment, System 1100 operates a VPD step to recover organic contaminants without acting on the semiconductor wafer. System 1100 generally includes a scanning nozzle 1102 configured to introduce a scanning solution 1104 onto the surface of a semiconductor wafer 1106 to recover organic contaminants (e.g., organic contaminants 1108, 1110 are shown) from the semiconductor wafer 1106 for transfer to an analytical system 1112 for identification and / or quantification of the organic contaminants. System 1110 may share one or more structures, functions, or features with System 100 described herein. For example, nozzle 1102 may include nozzle 304 or features thereof, may include different structures, functions, or features or combinations thereof, fluid paths between components may be the same, similar, or different, and the scanning techniques described herein may be facilitated by chamber 102, by different structures, by structures sharing one or more features, etc.

[0076] Figure 11A A semiconductor wafer 1106 is shown, which has two different organic contaminants (shown as 1108 and 1110) on its surface. As described herein, various organic materials have adverse effects on the suitability of semiconductor manufacturing processes and the semiconductor wafer 1106 to be further processed into electronic devices. System 1100 can be used to recover the individual organic contaminants and distinguish their composition and amount. This identification provides a deep understanding of organic contamination sources in semiconductor processes, such as determining which solvents may leach contaminants from containers in which they are stored.

[0077] refer to Figure 11B The diagram illustrates a system 1100 in which a scanning nozzle 1102 directs a scanning solution 1104 to a semiconductor wafer 1106 to draw organic contaminants 1108 and 1110 into the scanning solution 1104 (e.g., by dissolution or other mechanisms). The positioning of the scanning nozzle 1102 can be manipulated by the scanning arm assembly 104 described herein to move the scanning nozzle 1102 relative to the semiconductor wafer 1106, thereby directing the scanning solution 1104 to one or more surfaces or portions thereof of the semiconductor wafer 1106, wherein one or more pumps can be fluidly coupled to the nozzle 1102 to direct fluid to the scanning nozzle 1102 and introduce it onto the surface of the semiconductor wafer 1106, or to remove fluid from the semiconductor wafer 1106 through the nozzle 1102. For example, one or more portions of a pump system (e.g., pumps 600, 602, 604, 606, 608, 610, and 612) can be used to draw and push fluid through the nozzle 1102, an analysis system 1112, etc.

[0078] Organic solvents can have relatively high vapor pressures in the ambient environment, causing them to evaporate over time and reducing the amount of liquid solvent available to interact with organic contaminants present on the semiconductor wafer 1106. Alternatively or additionally, due to the relatively low surface tension of the fluid, organic solvents tend to diffuse onto the surface of the semiconductor wafer 1106, causing portions of the scanning solution to diffuse away from the area below the scanning nozzle and onto surfaces far from the normal control of the nozzle 1102. In an embodiment, system 1110 includes an organic scanning solution replenishment system to facilitate the introduction of organic scanning solution into the semiconductor wafer 1106 while maintaining an amount of organic scanning solution suitable for manipulation by the scanning nozzle 1102. For example, see reference... Figure 11C The system 1110 is shown to include an organic scanning solution replenishment system 1118 to direct the organic scanning solution to a nozzle 1102 to replenish the amount of organic solvent in the scanning solution when the organic solvent evaporates (e.g., schematically shown as 1120) or diffuses onto the semiconductor wafer 1106.

[0079] The organic scanning solution replenishment system 1118 is shown generally comprising a scanning solution reservoir 1122, a pump 1124, and a corresponding fluid line 1126 fluidly coupling the scanning solution reservoir 1122 to the nozzle 1102. The scanning solution reservoir 1122 can be any suitable container for holding a portion of the organic scanning solution for subsequent transfer to the nozzle 1102, thereby replenishing the amount of scanning solution located below the scanning nozzle 1102 for movement across the semiconductor wafer 1106. In an embodiment, the scanning solution reservoir 1122 is a closed container to prevent evaporation of the organic scanning solution from the reservoir. The scanning solution reservoir 1122 is fluidly coupled to the nozzle 1102 via the fluid line 1126, through which the pump 1124 can transfer the scanning solution held in the reservoir 1122 to the nozzle 1102. Pump 1124 may include a peristaltic pump, a syringe pump, another pump, or a combination thereof, adapted to transfer a scan solution held in scan solution reservoir 1122 to nozzle 1102 to replenish organic scan solution that has evaporated or otherwise diffused from the surface of semiconductor wafer 1106, which is maintained and controlled below nozzle 1102. In an embodiment, pump 1124 is controlled to transfer the scan solution held in scan solution reservoir 1122 to nozzle 1102 at a substantially constant flow rate via fluid line 1126. For example, pump 1124 may continuously transfer scan solution to nozzle 1102. The rate of transfer from pump 1124 typically depends on the composition of the organic scan solution, where higher flow rates can be facilitated by pump 1124 for more volatile organic solvents. Alternatively or additionally, system 1110 may include one or more sensors to determine the volume of the scanning solution manipulated by nozzle 1102, and when the volume is determined to be equal to or less than a threshold volume, system 1110 may activate pump 1124 to deliver a replenishment of the scanning solution (e.g., for a predetermined time until the volume is determined to be above the threshold volume, etc.).

[0080] After allowing the organic scanning solution to interact with the semiconductor wafer surface to draw organic contaminants or residues into the scanning solution, such as Figure 11D As shown, the scanning nozzle 1102 can then draw a scanning solution (e.g., shown as 1114) from the semiconductor wafer 1106, the scanning solution containing organic contaminants 1108 and 1110. For example, system 1100 may include a pump fluidly coupled to the scanning nozzle 1102 to draw the scanning solution containing organic contaminant 1114 into the scanning nozzle 1102 or an associated fluid line for subsequent transfer to the analysis system 1112. For example, Figure 11EThe diagram illustrates the transfer of a scanning solution containing organic contaminant 1114 from scanning nozzle 1102 to analytical system 1112 via transfer line 1116. Analytical system 1112 may include a time-of-flight (TOF) mass spectrometer (e.g., quadrupole TOF-MS (Q-TOF-MS)), triple quadrupole (triple quadrupole or QQQ) mass spectrometer, gas chromatography-mass spectrometry (GC-MS) system, gas chromatography-flame ionization detector (GC-FID), or other analytical systems for organic molecule analysis, or combinations thereof.

[0081] In one embodiment, the analytical system 1112 of system 1100 includes a Q-TOF-MS calibrated using a standard addition (MSA) calibration method. The quantification method of analytical system 112 may depend on whether the detected contaminant is part of a calibration standard used for MSA calibration. For example, if the detected contaminant is part of a calibration standard used for MSA calibration, the Q-TOF-MS may operate in a fully quantitative analysis mode. If the detected contaminant is not part of a calibration standard used for MSA calibration, the Q-TOF-MS may operate in a near-quantitative analysis mode. For example, operating the Q-TOF-MS in near-quantitative analysis mode may include utilizing a response factor (RF) of an organic compound having similar characteristics (e.g., polarity, functional groups, molecular weight, etc.) to the detected contaminant.

[0082] In an exemplary experiment, system 1100 was used to analyze and identify the collection of various organic contaminants from semiconductor wafers. During the analysis, isopropanol (IPA) samples were doped with 24 contaminants, each at a concentration of 10 ppb. The contaminants included bromide, phosphate, ethylisopropylamine, diethanolamine, heptamine, diethylaminoethanol, tripropylamine, tributylamine, sodium dodecyl sulfate, aminopropanol, L-proline, trimethyl glycine, L-leucine, bis(ethylhexyl) phosphate, tributyl phosphate, trichloroethyl phosphate, triphenyl phosphate, tri(ethylhexyl) phosphate, dibutyl phthalate, benzyl butyl phthalate, dioctyl phthalate, diisononyl phthalate, diisodecyl phthalate, and tris(2,4-di-tert-butylphenyl) phosphate (e.g., for potential contaminants of IPA stored in high-density polyethylene (HDPE) containers). One mL of doped IPA was introduced as droplets at different locations on the wafer surface into the semiconductor wafer. The IPA was allowed to evaporate, leaving the contaminant as a residue on the wafer surface. The wafer surface was then scanned with an organic scanning solution to dissolve the residue. The scan solution containing the contaminant was collected and transferred to an analytical system for contaminant identification and quantification. (Reference) Figure 12The results show the recovery of organic contaminants from the wafer after analysis by an analytical system (e.g., a Q-TOF-MS system).

[0083] Multi-scan sample collection and combination Figure 13 and Figure 14 Various aspects of a system (“System 1300”) for collecting and combining multiple scans of a semiconductor wafer according to various embodiments of the present invention are illustrated. System 1300 is shown generally comprising a nozzle 1302 and a collection container 1304 fluidly coupled to an analysis system 1306. System 1300 may share one or more structures, functions, or features with System 100 and / or System 1100 described herein. For example, nozzle 1302 may include nozzle 304 and / or nozzle 1102 or features thereof, may include different structures, functions, or features or combinations thereof, fluid paths between components may be the same, similar, or different, and the scanning techniques described herein may be facilitated by chamber 102, by different structures, by structures sharing one or more features, etc.

[0084] Nozzle 1302 is configured to introduce a scanning solution into a semiconductor wafer (e.g., wafer 108, wafer 1106, etc.), perform a scanning process during the entire movement of the scanning solution relative to one or more surfaces of the wafer, and remove the scanning solution from the wafer. For example, the fluid delivery of nozzle 1302 can be facilitated by the operation of one or more fluid pumps (e.g., syringe pumps, peristaltic pumps, etc.). The scanning solution is transferred from nozzle 1302 to collection container 1304 to retain the scanning solution within the internal volume of collection container 1304 until one or more additional scanning solutions are transferred from nozzle 1302 (or different nozzles) to collection container 1304 for collecting and combining with the first scanning solution. For example, nozzle 1302 can introduce a first scanning solution into the wafer, perform a first scanning process, remove the first scanning solution from the wafer as a first scanning sample 1308, and transfer the first scanning sample 1308 to collection container 1304. System 1300 can then facilitate a second scan, wherein a nozzle 1302 (or a different nozzle) introduces a second scan solution into the same wafer, performs the second scan process, removes the second scan solution from the wafer as a second scan sample 1310, and transfers the second scan sample 1310 to a collection container 1304 for combination with the first scan sample 1308. System 1300 can also facilitate additional scans in combination with other scans (e.g., optionally, one or more additional scan samples 1312 can be added to the collection container 1304 to mix with other samples present, such as the first scan sample 1308 and / or the second scan sample 1310). The collection container 1304 then provides the combined scan sample 1314 within the container for transfer to the analysis system 1306.

[0085] Collection container 1304 can be provided in various configurations suitable for holding multiple scanned samples. For example, collection container 1304 can be, but is not limited to, a tubular structure, a tubular structure with a conical or angled bottom, a laboratory tube or vial, a length of fluid tube configured to receive samples back and forth, a sample vial, or combinations thereof. Figure 14 The collection container 1304 shown is provided as a tubular structure 1400 with a tapered or angled bottom 1402, which has an outlet line 1404 fluidly coupled to a valve 1406. The valve 1406 can be configured to restrict fluid flow from the collection container 1304 (e.g., during a sample collection process receiving multiple scanned samples from nozzle 1302) or to allow the transfer of a combined scanned sample 1314 to the analysis system 1306. In an embodiment, the collection container 1304 includes a vent port 1408 to allow gas to be released from the collection container 1304 into the surrounding environment or to allow gas to be introduced from the atmosphere into the collection container 1304.

[0086] System 1300 facilitates the combination of multiple scans into a single scan sample to improve the recovery efficiency of that sample. For example, instead of relying on a single scan to collect all contaminants of interest from a wafer (e.g., wafer 108), System 1300 can utilize a first scan solution to recover a first portion of the contaminants or residues present on the wafer (e.g., 80% of the contaminants in a single scan). System 1300 can then perform a second scan using the same or a different scan solution to recover a portion of the remaining contaminants on the same wafer (e.g., 80% of the remaining 20% ​​of contaminants in the second scan). Additional scans can be performed to target any further residual contaminants. System 1300 can utilize multiple scans to target different types of contaminants, including but not limited to polar molecules, nonpolar molecules, metallic contaminants, ionic contaminants, etc., or combinations thereof, using one or more scan solutions or combinations of scan solutions, including but not limited to polar organic solvents, nonpolar organic solvents, aqueous solutions (e.g., acidic solutions, alkaline solutions, neutral solutions, etc.). Collection container 1304 facilitates the combination and mixing of scans with the same or different scan solutions to provide a complete recovery profile of wafer contaminants.

[0087] After collecting two or more scans in collection container 1304, system 1300 facilitates the transfer of combined scan sample 1314 to analytical system 1306 for contaminant identification and / or quantification. For example, system 1300 may utilize one or more pumps or a vacuum source to pull or push the combined scan sample 1314 from collection container 1304 via one or more fluid lines (e.g., fluid line 1410 is shown) and through valve 1406 to the analytical system. Analytical system 1306 may include one or more detectors for processing the combined scan sample 1314 or portions thereof. For example, the analytical system 1306 may include one or more of the following: a time-of-flight (TOF) mass spectrometer, a triple quadrupole (triple quadrupole or QQQ) mass spectrometer, a gas chromatography-mass spectrometry (GC-MS) system, a gas chromatography-flame ionization detector (GC-FID) or other analytical systems for organic molecule analysis, an ICP spectrometer (e.g., an inductively coupled plasma mass spectrometer (ICP / ICP-MS), an inductively coupled plasma atomic emission spectrometer (ICP-AES), etc.) or other analytical systems for metal analysis.

[0088] Inline generation of organic scanning solutions Reference Figure 15 and Figure 16 This document illustrates a system (“System 1500”) for in-line generation of organic scanning solutions and internal standards for analyzing organic contaminants that may be present on semiconductor wafers, according to various embodiments of the invention. As further described herein, the scanning fluid may comprise an organic scanning solution formed on demand through in-line mixing of multiple organic solvents by pump action controlled by a system controller to precisely control the proportion of organic solvents. Alternatively or additionally, multiple calibration standards may be prepared using organic solvents to calibrate organic analytical instruments.

[0089] System 1500 Figure 15 The image is shown generally comprising a nozzle 1502, a pump system 1504 fluidly coupled to the nozzle 1502 via a valve system 1506, and fluidly coupled to a plurality of organic chemical sources 1508 (e.g., via one or more fluid lines 1510). The nozzle 1502 may include one or more of nozzles such as nozzle 304, nozzle 1102, nozzle 1302, a spot nozzle for generating droplets on a semiconductor wafer, a nozzle having one or more elongated channels for generating a scanning solution flow across the semiconductor wafer, etc. The organic chemical sources 1508 include, but are not limited to, organic solvents, chemical standards, or other chemical substances used to form organic scanning solutions or calibration standards, such as diluents in combination with one or more organic chemical substances, aqueous solutions, etc.

[0090] In an embodiment, system 1500 includes a controller 1512 that controls and coordinates the operation of pump system 1504 and valve system 1506 to draw multiple organic solvents or chemical standards from organic chemical source 1508 and introduce said multiple organic solvents together to form an organic scanning solution or to introduce one or more chemical standards with one or more organic solvents or diluents to form calibration standards. Fluids may be introduced to mix within one or more valves of valve system 1510 (e.g., via a multi-port valve or one or more mixing ports of multiple multi-port valves), may be introduced to mix within a multi-port mixing manifold, may be introduced to another mixing device, or a combination thereof.

[0091] The mixed organic fluid can then be conveyed to nozzle 1502 for introduction into semiconductor wafer 108 for the scanning process. For example, controller 1512 can coordinate the operation of pump system 1504 and valve system 1506 to convey the mixed organic scanning solution or mixed calibration standards to nozzle 1502, whereby one or more of scanning arm assembly 104 and motor system 112 generate relative motion between nozzle 1502 and semiconductor wafer 108 to move the mixed organic scanning solution across the surface of semiconductor wafer 108. After or during the scanning process, nozzle 1502 recovers the mixed organic scanning solution from wafer 108 and guides the sample to analysis system 1514. The analytical system 1514 may include one or more of the following: a time-of-flight (TOF) mass spectrometer, a triple quadrupole (triple quadrupole or QQQ) mass spectrometer, a gas chromatography-mass spectrometry (GC-MS) system, a gas chromatography-flame ionization detector (GC-FID) or other analytical systems for organic molecule analysis, an ICP spectrometer (e.g., inductively coupled plasma mass spectrometry (ICP / ICP-MS), inductively coupled plasma atomic emission spectrometry (ICP-AES), etc.) or other analytical systems for metal analysis. In one embodiment, a series of mixed calibration standards may be directly transferred to the analytical system 1514 to generate calibration curves for analyzing samples provided by an organic scanning solution generated in-line.

[0092] Figure 16An exemplary embodiment of system 1500 is shown, wherein pump system 1504 includes a plurality of injection pumps (injection pumps 1504A, 1504B, 1504C, 1504D, 1504E, 1504F shown) in fluid communication with multi-port valve 1506A of valve system 1506. The injection pumps are fluidly coupled to an organic chemical source 1508 to aspirate an organic solvent or standard solution into the respective injection pumps (e.g., during an injection loading process under the control of controller 1512), and then the organic fluid is dispensed (e.g., under the control of controller 1512) to valve 1506A for mixing. The mixed organic fluid is then conveyed to nozzle 1502, a plurality of nozzles 1502, or one or more detectors of analytical system 1514. In one embodiment, valve 1506A includes a mixing port 1600 configured to mix two or more fluids from two or more injection pumps to provide a mixed organic fluid. For example, valve 1506A may include internal fluid passages 1602 on one or more of the rotor or stator to direct fluid received in two or more ports (e.g., coupled to a fluid line) to a single mixing port 1600 or an internal passage fluidly coupled thereto, so that multiple received fluids are combined and mixed into fluid passage 1604 and / or fluid line 1606 coupled to the mixing port. Alternatively or additionally, valve system 1506 includes one or more mixing manifolds for receiving two or more fluid flows from an injection pump to allow these fluid flows to mix, thereby providing a mixed organic scanning solution or a mixed calibration standard. For example, the mixed organic scanning solution or standard solution may be delivered to nozzle 1502 and / or analysis system 1514 via operation of valve 1506B of valve system 1506.

[0093] Electromechanical devices (e.g., motors, servos, actuators, etc.) may be coupled to or embedded in components of the systems described herein (e.g., systems 100, 1100, 1300, 1500, or combinations thereof) to facilitate automated operation via control logic embedded within or external to the system. The electromechanical devices may be configured to cause movement of devices and fluids according to various processes (e.g., those described herein). The system may include or be controlled by a computing system having a processor or other controller configured to execute computer-readable program instructions (i.e., control logic) from a non-transient carrier medium (e.g., storage media such as flash drives, hard disk drives, solid-state drives, SD cards, optical discs, etc.). The computing system may be connected to various components of system 100 via direct connection or via one or more network connections (e.g., local area networks (LANs), wireless local area networks (WANs or WLANs), one or more hub connections (e.g., USB hubs), etc.). For example, the computing system may be communicatively coupled to chamber 102, motor system 112, valves described herein, pumps described herein, other components described herein, components that guide their control, or combinations thereof. When executed by a processor or other controller, program instructions can cause the computing system to control a system (e.g., a pump, selector valve, actuator, spray nozzle, positioning device, etc.) according to one or more operating modes described herein.

[0094] It should be understood that the various functions, control operations, processing blocks, or steps described in this invention can be performed by any combination of hardware, software, or firmware. In some embodiments, the various steps or functions are performed by one or more of the following: electronic circuits, logic gates, multiplexers, programmable logic devices, application-specific integrated circuits (ASICs), controllers / microcontrollers, or computing systems. Computing systems may include, but are not limited to, personal computing systems, mobile computing devices, mainframe computing systems, workstations, graphics computers, parallel processors, or any other devices known in the art. Generally, the term "computing system" is broadly defined to encompass any device having one or more processors or other controllers that execute instructions from a carrier medium.

[0095] Program instructions that implement functions, control operations, processing blocks, or steps, such as those exemplified by the embodiments described herein, may be transmitted via a carrier medium or stored on a carrier medium. The carrier medium may be a transmission medium, such as, but not limited to, wires, cables, or wireless transmission links. The carrier medium may also include non-transient signal carrying media or storage media, such as, but not limited to, read-only memory, random access memory, magnetic disks or optical disks, solid-state or flash memory devices, or magnetic tape.

[0096] The systems described herein (e.g., systems 100, 1100, 1300, 1500) may include one or more features of another system described herein, unless the context indicates that such features are incompatible. For example, and not limited to, system 100 may include one or more of an organic scan solution replenishment system 1118, a collection container 1304, and an in-line organic scan solution and internal standard generation system 1500, in combination with or excluding one or more features of another system described herein.

[0097] Furthermore, it should be understood that the present invention is defined by the appended claims. Although embodiments of the invention have been shown, it will be apparent to those skilled in the art that various modifications can be made without departing from the scope and spirit of the invention.

Claims

1. A method for scanning the surface of a semiconductor wafer with organic contaminants using a nozzle, comprising: The nozzle is positioned above the surface of a semiconductor wafer, which is adjacent to or supported within the chamber body. A first scanning fluid containing one or more organic solvents is introduced into the inlet port of the nozzle; A portion of the first scanning fluid is directed to the surface of the semiconductor wafer to allow the first scanning fluid to interact with one or more organic contaminants present on the surface of the semiconductor wafer; A first scan fluid containing at least a portion of one or more organic contaminants is removed from the surface of a semiconductor wafer via a nozzle; A second scanning fluid containing one or more organic solvents is introduced into the inlet port of the nozzle; A portion of the second scanning fluid is directed to the surface of the semiconductor wafer to allow interaction between the second scanning fluid and one or more residual organic contaminants present on the surface of the semiconductor wafer after the first scanning fluid is removed. as well as A second scanning fluid containing at least a portion of one or more residual organic contaminants is removed from the surface of a semiconductor wafer via a nozzle.

2. The method according to claim 1, wherein the first scanning fluid and the second scanning fluid have the same organic solvent composition.

3. The method according to claim 1, wherein the first scanning fluid and the second scanning fluid have different organic solvent components.

4. The method according to claim 3, further comprising: A third scanning fluid containing one or more organic solvents is introduced into the inlet port of the nozzle; A portion of the third scanning fluid is directed to the surface of the semiconductor wafer to allow interaction between the third scanning fluid and one or more other residual organic contaminants present on the surface of the semiconductor wafer after the removal of the second scanning fluid; and A third scan fluid containing at least a portion of one or more other residual organic contaminants is removed from the surface of a semiconductor wafer via a nozzle.

5. The method of claim 4, wherein the third scanning fluid has a different composition from either the first scanning fluid or the second scanning fluid.

6. The method of claim 4, wherein the third scanning fluid has the same composition as one or more of the first scanning fluid and the second scanning fluid.

7. The method of claim 1, wherein directing a portion of the first scanning fluid to the surface of the semiconductor wafer to allow interaction between the first scanning fluid and one or more organic contaminants present on the surface of the semiconductor wafer comprises: The portion of the first scanning fluid is directed to the surface of the semiconductor wafer to allow interaction between the first scanning fluid and one or more organic contaminants present on the surface of the semiconductor wafer. as well as A second portion of the first scanning fluid is introduced into the nozzle to replenish a certain volume of the first scanning fluid on the surface of the semiconductor wafer.

8. The method of claim 7, wherein the second portion is proportional to the volume of the first scanning fluid evaporated from the surface of the semiconductor wafer.

9. The method of claim 7, wherein the second portion is proportional to the volume of the first scanning fluid that diffuses away from the nozzle control on the surface of the semiconductor wafer.

10. A method for scanning the surface of a semiconductor wafer with organic contaminants using a nozzle, comprising: The nozzle is positioned above the surface of a semiconductor wafer, which is adjacent to or supported within the chamber body. A first scanning fluid, comprising one or more organic solvents, is introduced into the inlet port of the nozzle; A portion of the first scanning fluid is directed to the surface of the semiconductor wafer to allow the first scanning fluid to interact with one or more organic contaminants present on the surface of the semiconductor wafer; While guiding a portion of the first scanning fluid onto the surface of the semiconductor wafer, a second portion of the first scanning fluid is directed to a nozzle to replenish a certain volume of the first scanning fluid onto the surface of the semiconductor wafer. as well as A first scanning fluid containing at least a portion of one or more organic contaminants is removed from the surface of a semiconductor wafer via a nozzle.

11. The method of claim 10, wherein the second portion is proportional to the volume of the first scanning fluid evaporated from the surface of the semiconductor wafer.

12. The method of claim 10, wherein the second portion is proportional to the volume of the first scanning fluid that diffuses away from the nozzle control on the surface of the semiconductor wafer.

13. The method of claim 10, wherein directing a second portion of the first scanning fluid to the nozzle to replenish a volume of the first scanning fluid on the surface of the semiconductor wafer comprises: A second portion of the first scanning fluid is introduced from the scanning solution reservoir to the nozzle via a pump to replenish the volume of the first scanning fluid on the surface of the semiconductor wafer.

14. The method of claim 13, wherein introducing a second portion of the first scanning fluid from the scanning solution reservoir to the nozzle via a pump to replenish the volume of the first scanning fluid on the surface of the semiconductor wafer comprises: A second portion of the first scanning fluid is introduced from the scanning solution reservoir to the nozzle via a pump at a substantially constant flow rate to replenish the volume of the first scanning fluid on the surface of the semiconductor wafer.

15. A method for scanning the surface of a semiconductor wafer with organic contaminants using a nozzle, comprising: The nozzle is positioned above the surface of a semiconductor wafer, which is adjacent to or supported within the chamber body. A first scanning fluid, comprising one or more organic fluids, is introduced into the inlet port of the nozzle; A portion of the first scanning fluid is directed to the surface of the semiconductor wafer to allow the scanning fluid to interact with one or more organic contaminants present on the surface of the semiconductor wafer; as well as A first scanning fluid containing at least a portion of the one or more organic contaminants is removed from the surface of the semiconductor wafer via the nozzle.

16. The method of claim 15, further comprising: A second scanning fluid containing one or more organic fluids is introduced into the inlet port of the nozzle; A portion of the second scanning fluid is directed to the surface of the semiconductor wafer to allow interaction between the second scanning fluid and one or more residual organic contaminants present on the surface of the semiconductor wafer after the first scanning fluid has been removed; as well as A second scanning fluid containing at least a portion of the one or more residual organic contaminants is removed from the surface of the semiconductor wafer via a nozzle.

17. The method of claim 16, wherein the first scanning fluid and the second scanning fluid have different organic solvent components.

18. The method of claim 16, further comprising: While guiding a portion of the first scanning fluid onto the surface of the semiconductor wafer, a second portion of the first scanning fluid is directed to a nozzle to replenish a certain volume of the first scanning fluid onto the surface of the semiconductor wafer.

19. The method of claim 18, wherein the second portion is proportional to the volume of the first scanning fluid evaporated from the surface of the semiconductor wafer.

20. The method of claim 18, wherein directing a second portion of the first scanning fluid to a nozzle to replenish a volume of the first scanning fluid on the surface of the semiconductor wafer comprises: A second portion of the first scanning fluid is introduced from the scanning solution reservoir to the nozzle via a pump to replenish the volume of the first scanning fluid on the surface of the semiconductor wafer.

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