Temperature control system and method

Abstract

The present disclosure provides a temperature control system and method. The system comprises: a master control device configured to record the cumulative number of wafers polished during the polishing of the same batch of wafers by a chemical mechanical polishing device; output a control instruction of a target set temperature corresponding to the cumulative number of wafers polished based on a temperature adjustment strategy model; and a water chiller configured to perform water cooling temperature control on the chemical mechanical polishing device based on the control instruction output by the master control device, so that the actual temperature of a carrier disk of the chemical mechanical polishing device is within a target range.

Description

Technical Field

[0001] This disclosure relates to the field of semiconductor manufacturing, and in particular to a temperature control system and method. Background Technology

[0002] In chemical mechanical polishing (CMP) equipment, the high-speed rotating carrier disk (copper disk) is the core component for performing wafer surface planarization. With continuous production operations, the carrier disk generates significant heat accumulation due to continuous friction with the wafer and polishing slurry.

[0003] Therefore, a chiller is needed to cool the bearing plate by water from the bottom. The traditional temperature control solution is to set the temperature of the chiller to a fixed value, but this method is not conducive to product yield and process stability. Summary of the Invention

[0004] This disclosure provides a temperature control system and method that can improve product yield and process stability. The technical solution is as follows: In a first aspect, embodiments of this disclosure provide a temperature control system, the system comprising: The main control device is used to record the cumulative number of wafers ground during the grinding process of the same batch of wafers in the chemical mechanical polishing equipment; and to output the control command for the target set temperature corresponding to the cumulative number of wafers ground based on the temperature adjustment strategy model. A chiller is used to control the water cooling temperature of the chemical mechanical grinding equipment based on the control commands output by the main control device, so that the actual temperature of the bearing plate of the chemical mechanical grinding equipment is within the target range.

[0005] Optionally, the temperature adjustment strategy model includes at least one temperature adjustment strategy for a batch of wafers; The temperature adjustment strategy includes the correspondence between the number of wafers and the target set temperature.

[0006] Optionally, different batches of wafers may differ in at least one of the following parameters: Grinding process formula, grinding pressure, grinding speed, and grinding fluid flow rate.

[0007] Optionally, the chiller is used to adjust the compressor power and / or circulation pump speed based on the control commands output by the main control device, so as to control the water cooling temperature of the chemical mechanical grinding equipment.

[0008] Optionally, the system further includes: Temperature detection equipment is used to detect the actual temperature of the bearing plate of the chemical mechanical grinding equipment. The main control device is also used to establish the temperature adjustment strategy model by controlling the target set temperature to obtain the same actual temperature when the number of wafers ground in total is different.

[0009] Optionally, the system further includes: An angle measuring device for detecting the angle of the bearing plate of the chemical mechanical grinding equipment; The main control device is also used to correct the actual temperature of the bearing plate of the chemical mechanical grinding equipment based on the angle of the bearing plate.

[0010] Secondly, embodiments of this disclosure provide a temperature control method, the method comprising: During the grinding process of the same batch of wafers using a chemical mechanical polishing (CMP) machine, the cumulative number of wafers ground is recorded. Based on the temperature adjustment strategy model, a control command for the target set temperature corresponding to the cumulative number of milled wafers is output. Based on the control command for the target set temperature, the chemical mechanical grinding equipment is subjected to water cooling temperature control so that the actual temperature of the bearing plate of the chemical mechanical grinding equipment is within the target range.

[0011] Optionally, the temperature adjustment strategy model includes at least one temperature adjustment strategy for a batch of wafers; The temperature adjustment strategy includes the correspondence between the number of wafers and the target set temperature.

[0012] Optionally, different batches of wafers may differ in at least one of the following parameters: Grinding process formula, grinding pressure, grinding speed, and grinding fluid flow rate.

[0013] Optionally, the control command based on the target set temperature for water cooling of the chemical mechanical grinding equipment includes: Based on the control command for the target set temperature, the compressor power and / or the circulation pump speed are adjusted to control the water cooling temperature of the chemical mechanical grinding equipment.

[0014] Thirdly, embodiments of this disclosure provide a computer device, the computer device comprising: a processor; a memory configured to store processor-executable instructions; wherein the processor is configured to perform the temperature control method according to any one of the second aspects.

[0015] Fourthly, embodiments of this disclosure provide a computer-readable storage medium that, when instructions in the computer-readable storage medium are executed by a processor of a computer device, enables the computer device to perform the temperature control method described in any of the second aspects.

[0016] The beneficial effects of the technical solutions provided in this disclosure are: In this embodiment, the number of wafers in the same batch that have been ground cumulatively is recorded. Then, based on a temperature adjustment strategy model, a target set temperature corresponding to the cumulative number of wafers ground is determined, and this target set temperature is used to control the chiller for water cooling temperature control. That is, this temperature control scheme takes into account the issue that heat accumulation changes as the number of wafers ground increases during the grinding process. It shifts the control objective from stabilizing the water cooling temperature to stabilizing the actual temperature of the carrier plate of the chemical mechanical polishing equipment, thus stabilizing the final process quality and achieving advanced process control oriented towards quality objectives.

[0017] This solution effectively suppresses batch-to-batch process drift caused by prolonged operation, improves wafer uniformity, and enhances product yield and process stability. It significantly extends the continuous production window, reduces emergency downtime and manual intervention due to process issues, and improves equipment utilization. The solution allows for flexible switching of control strategies based on different products and polishing slurry formulations, and can self-optimize through a learning mechanism, reducing the difficulty of process debugging and maintenance. Primarily implemented at the software level, this solution requires no major hardware modifications to existing chemical mechanical polishing equipment and chillers, resulting in low implementation costs and strong compatibility. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in the embodiments of this disclosure, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this disclosure. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0019] Figure 1 This is a structural block diagram of a temperature control system provided in an embodiment of this disclosure; Figure 2 This is a schematic diagram of the structure of a temperature control system provided in an embodiment of this disclosure; Figure 3 This is a flowchart of a temperature control method provided in an embodiment of this disclosure; Figure 4 This is a flowchart of another temperature control method provided in this embodiment of the disclosure; Figure 5 This is a structural block diagram of a computer device provided in an embodiment of this disclosure.

[0020] Explanation of reference numerals in the attached figures: 1: Chemical mechanical grinding equipment; 10: Main control equipment; 20: Chiller; 30: Temperature detection equipment; 40: Angle measuring equipment; 50: Pressure detection equipment; 400: Computer equipment; 401: Central processing unit; 402: Random access memory; 403: Read-only memory; 404: System memory; 405: System bus; 406: Basic input / output system; 407: Mass storage device; 408: Display; 409: Input device; 410: Input / output controller; 411: Network interface unit; 412: Network; 413: Operating system; 414: Application program; 415: Other program modules. Detailed Implementation

[0021] To make the objectives, technical solutions, and advantages of this disclosure clearer, the embodiments of this disclosure will be described in further detail below with reference to the accompanying drawings.

[0022] Due to the lag in the cooling system and the non-uniformity of heat conduction, the actual temperature of the carrier disk in chemical mechanical polishing (CMP) equipment rises slowly and unevenly with the increase in the cumulative number of wafers polished. This causes microscopic thermal expansion deformation of the carrier disk, resulting in a drift in the ideal parallelism (i.e., angle) of its working surface relative to the polishing head.

[0023] The drift of the bearing disk angle directly leads to uneven distribution of grinding pressure and speed in different areas of the wafer surface, causing problems such as inconsistent grinding rate, exacerbated edge effect, and deterioration of uniformity within the wafer, which seriously reduces product yield and process stability.

[0024] Currently, the main method to solve this problem is for operators to periodically stop the machine based on experience, use offline measuring instruments to check the angle of the copper disk, and perform manual mechanical adjustments or replace the grinding pads. This method is a reactive measure, which not only reduces equipment utilization but also relies on personnel experience for adjustment, making it impossible to achieve batch-to-batch process consistency. This is a key pain point in high-end mass production.

[0025] Figure 1 This is a structural block diagram of a temperature control system provided in an embodiment of this disclosure. Figure 1 As shown, the temperature control system includes: main control device 10 and chiller 20.

[0026] Among them, the main control device 10 is used to record the cumulative number of wafers ground during the grinding process of the same batch of wafers in the chemical mechanical polishing equipment; and output the control command of the target set temperature corresponding to the cumulative number of wafers ground based on the temperature adjustment strategy model. The chiller 20 is used to control the water cooling temperature of the chemical mechanical grinding equipment based on the control commands output by the main control device, so that the actual temperature of the bearing plate of the chemical mechanical grinding equipment is within the target range.

[0027] In this embodiment, the number of wafers in the same batch that have been ground cumulatively is recorded. Then, based on a temperature adjustment strategy model, a target set temperature corresponding to the cumulative number of wafers ground is determined, and this target set temperature is used to control the chiller for water cooling temperature control. That is, this temperature control scheme takes into account the issue that heat accumulation changes as the number of wafers ground increases during the grinding process. It shifts the control objective from stabilizing the water cooling temperature to stabilizing the actual temperature of the carrier plate of the chemical mechanical polishing equipment, thus stabilizing the final process quality and achieving advanced process control oriented towards quality objectives.

[0028] This solution effectively suppresses batch-to-batch process drift caused by prolonged operation, improves wafer uniformity, and enhances product yield and process stability. It significantly extends the continuous production window, reduces emergency downtime and manual intervention due to process issues, and improves equipment utilization. The solution allows for flexible switching of control strategies based on different products and polishing slurry formulations, and can self-optimize through a learning mechanism, reducing the difficulty of process debugging and maintenance. Primarily implemented at the software level, this solution requires no major hardware modifications to existing chemical mechanical polishing equipment and chillers, resulting in low implementation costs and strong compatibility.

[0029] In this embodiment of the disclosure, the main control device 10, i.e., the grinding machine control system, is responsible for starting and counting. For example, the grinding machine control system starts the grinding operation and initializes or reads the current cumulative number of operations (the cumulative number of wafers ground). Each time a wafer is processed, the counter (e.g., a programmable logic controller (PLC) counter) automatically increments.

[0030] The grinding mill control system includes a batch counting module, which is integrated into the grinding mill main control software (such as the Advanced Process Control (APC) unit) for accurately recording and accumulating the number of jobs.

[0031] The main control device 10 is also used to determine the target set temperature corresponding to the cumulative number of wafers ground based on the temperature adjustment strategy model.

[0032] For example, the cumulative number of jobs is input into the temperature adjustment strategy model, and then the target set temperature output by the model is obtained.

[0033] In one example of an embodiment of this disclosure, the temperature adjustment strategy model can be an artificial intelligence model. In another example of an embodiment of this disclosure, the temperature adjustment strategy model can also be a mathematical model.

[0034] In this embodiment of the disclosure, the temperature adjustment strategy model includes at least one temperature adjustment strategy for a batch of wafers; The temperature adjustment strategy includes the correspondence between the number of wafers and the target set temperature.

[0035] In this embodiment of the disclosure, different batches of wafers differ in at least one of the following parameters: Grinding process formula, grinding pressure, grinding speed, and grinding fluid flow rate.

[0036] In this implementation, by modeling different batches of wafers separately, the control strategy can be flexibly switched according to different products and different polishing slurry formulations.

[0037] The grinding process formulation may include grinding slurry formulation, etc.

[0038] For example, the polishing process formula, polishing pressure, polishing speed and polishing fluid flow rate are different for different batches of wafers.

[0039] In this embodiment of the disclosure, the temperature control system may further include a temperature detection device 30.

[0040] Temperature detection device 30 is used to detect the actual temperature of the bearing plate of the chemical mechanical grinding equipment; The main control device 10 is also used to establish the temperature adjustment strategy model by controlling the target set temperature to obtain the same actual temperature when the number of wafers ground in total is different.

[0041] It's important to note that the target set temperature controls the temperature of the coolant, and this temperature is not equal to the actual temperature of the bearing plate. Furthermore, with the same target set temperature, the actual temperature of the cooled bearing plate will differ depending on the cumulative number of operations.

[0042] For example, the appropriate actual temperature for the carrier plate during the grinding of the same batch of wafers is determined first. Then, during the testing process, the target set temperature of the chiller is adjusted to ensure that the carrier plate reaches the set actual temperature.

[0043] For wafer grinding in the same batch at different cumulative job counts, the above optimization process is performed separately to obtain a suitable target set temperature for different cumulative job counts. A temperature adjustment strategy model is established by mapping the actual temperature and target set temperature for different batches and different cumulative job counts.

[0044] For example, training artificial intelligence models or building mathematical models.

[0045] In the above model, for the same batch, the target set temperature usually decreases as the cumulative number of jobs increases, that is, the two are negatively correlated.

[0046] For example, as the cumulative number of operations increases, the target set temperature of the chiller is gradually or in stages reduced to enhance cooling intensity and counteract the heat accumulation effect of the bearing plate.

[0047] For example, the target temperature is lowered each time the cumulative number of operations increases. This method allows for the most precise control.

[0048] For example, the target temperature is lowered only after the cumulative number of operations increases by N, where N is an integer greater than 1, such as 5 to 10 times. This method controls resource consumption relatively less.

[0049] In this implementation, the model is modeled in the manner described above, enabling the model to perform water cooling control based on the actual temperature during use, thereby ensuring the wafer grinding effect.

[0050] In other words, as the cumulative number of operations increases, the temperature setting of the chiller is reduced to enhance the cooling intensity and stabilize the angle of the bearing plate (copper plate). The cumulative heat effect of the bearing plate will lead to a large consumption of the inner ring of the copper plate. Through the temperature compensation of the chiller, the angle of the bearing plate is always maintained at the optimal angle of the process.

[0051] After the main control device 10 determines the target set temperature, it generates and issues commands. That is, it encapsulates the target set temperature into a command protocol that the chiller can recognize.

[0052] For example, the control command includes a target set temperature. This command is sent in real time to the chiller controller via standard industrial communication interfaces such as Ethernet / Industrial Protocol (Ethernet / IP), Process Field Network (PROFINET), Modbus Transmission Control Protocol (Modbus TCP), etc.

[0053] The main control device 10 and the chiller 20 can communicate bidirectionally via a communication interface.

[0054] In this embodiment of the disclosure, the chiller 20 is used to adjust the compressor power and / or the circulation pump speed based on the control commands output by the main control device, so as to control the water cooling temperature of the chemical mechanical grinding equipment.

[0055] In this implementation, the chiller adjusts its compressor power and / or circulation pump speed according to control commands to regulate the temperature of the chilled water output to the cooling channels of the support plate to the target value. This precise temperature control stabilizes the overall temperature field of the support plate, thereby suppressing thermal expansion and deformation and maintaining the angular stability of the working surface.

[0056] For example, the chiller 20 is used to adjust the compressor power and circulation pump speed based on the control commands output by the main control device, so as to control the water cooling temperature of the chemical mechanical grinding equipment.

[0057] In this embodiment of the disclosure, the temperature control system may further include: an angle measuring device 40.

[0058] An angle measuring device 40 is used to detect the angle of the bearing plate of the chemical mechanical grinding equipment; The main control device 10 is also used to correct the actual temperature of the bearing plate of the chemical mechanical grinding equipment based on the angle of the bearing plate.

[0059] Among them, the angle measuring device 40 can be an offline or integrated angle measuring instrument.

[0060] In this implementation, the main control device receives the measured bearing plate angle from an offline or integrated angle measuring instrument, which is used to calibrate and optimize the actual temperature of the bearing plate of the chemical mechanical grinding equipment.

[0061] Among them, the angle of the bearing plate is monitored by an angle measuring device, the relationship between temperature and the actual angle of the bearing plate is captured, and the bearing plate angle is stabilized by using a chiller to adjust the temperature.

[0062] The correction of the actual temperature of the bearing plate of the chemical mechanical grinding equipment can be made by modifying the target set temperature, such as by increasing or decreasing it; or it can be made by sending a separate command to correct the temperature after the control command for the target set temperature is issued.

[0063] The angle of the bearing plate and the temperature correction amount are related as follows: as the temperature increases, the angle of the bearing plate increases. The temperature correction amount is determined by monitoring the actual angle of the bearing plate and comparing it with the target angle (optimal process angle).

[0064] For example, the online angle measurement and monitoring system shows the bearing plate angle to be -55 degrees. The relationship between the chiller's set temperature and the bearing plate angle is as follows: increasing the temperature by 1°C increases the bearing plate angle by 5 degrees; the optimal process angle for the bearing plate is -40 degrees. Therefore, increasing the chiller's set temperature by 3°C will achieve the optimal process angle of -40 degrees for the bearing plate.

[0065] Here, -40 degrees means that the bearing disk is tilted 40 degrees relative to the surface of the horizontal polishing pad in a preset negative direction.

[0066] Figure 2 This is a schematic diagram of a temperature control system provided in an embodiment of this disclosure. See also... Figure 2 The main control device 10 and the chiller 20 are connected in communication. The chiller 20 is connected to the carrier platform of the chemical mechanical grinding equipment 1 through cooling pipes (inlet pipe and return pipe). The chemical mechanical grinding equipment 1 is equipped with a temperature detection device 30, which is connected in communication with the main control device 10.

[0067] Optionally, the chemical mechanical grinding equipment 1 may also be equipped with other monitoring hardware such as a pressure detection device 50.

[0068] Figure 3 This is a flowchart of a temperature control method provided in an embodiment of this disclosure. Figure 3 As shown, the method includes: S31: During the grinding process of the same batch of wafers using a chemical mechanical polishing (CMP) machine, record the cumulative number of wafers ground.

[0069] S32: Based on the temperature adjustment strategy model, output the control command for the target set temperature corresponding to the cumulative number of milled wafers.

[0070] S33: Based on the control command of the target set temperature, perform water cooling temperature control on the chemical mechanical grinding equipment so that the actual temperature of the bearing plate of the chemical mechanical grinding equipment is within the target range.

[0071] In this embodiment, the number of wafers in the same batch that have been ground cumulatively is recorded. Then, based on a temperature adjustment strategy model, a target set temperature corresponding to the cumulative number of wafers ground is determined, and this target set temperature is used to control the chiller for water cooling temperature control. That is, this temperature control scheme takes into account the issue that heat accumulation changes as the number of wafers ground increases during the grinding process. It shifts the control objective from stabilizing the water cooling temperature to stabilizing the actual temperature of the carrier plate of the chemical mechanical polishing equipment, thus stabilizing the final process quality and achieving advanced process control oriented towards quality objectives.

[0072] This solution effectively suppresses batch-to-batch process drift caused by prolonged operation, improves wafer uniformity, and enhances product yield and process stability. It significantly extends the continuous production window, reduces emergency downtime and manual intervention due to process issues, and improves equipment utilization. The solution allows for flexible switching of control strategies based on different products and polishing slurry formulations, and can self-optimize through a learning mechanism, reducing the difficulty of process debugging and maintenance. Primarily implemented at the software level, this solution requires no major hardware modifications to existing chemical mechanical polishing equipment and chillers, resulting in low implementation costs and strong compatibility.

[0073] Figure 4 This is a flowchart of another temperature control method provided in an embodiment of this disclosure. For example... Figure 4 As shown, the method includes: S40: Establish a temperature adjustment strategy model.

[0074] In one example of an embodiment of this disclosure, the temperature adjustment strategy model can be an artificial intelligence model. In another example of an embodiment of this disclosure, the temperature adjustment strategy model can also be a mathematical model.

[0075] In this embodiment of the disclosure, the temperature adjustment strategy model includes at least one temperature adjustment strategy for a batch of wafers; The temperature adjustment strategy includes the correspondence between the number of wafers and the target set temperature.

[0076] In this embodiment of the disclosure, different batches of wafers differ in at least one of the following parameters: Grinding process formula, grinding pressure, grinding speed, and grinding fluid flow rate.

[0077] The grinding process formulation may include grinding slurry formulation, etc.

[0078] For example, the polishing process formula, polishing pressure, polishing speed and polishing fluid flow rate are different for different batches of wafers.

[0079] For example, step S40 may include: Detect the actual temperature of the bearing plate of the chemical mechanical grinding equipment; When the number of wafers ground in total is different, the same actual temperature is obtained by controlling the target set temperature, and the temperature adjustment strategy model is established.

[0080] It's important to note that the target set temperature controls the temperature of the coolant, and this temperature is not equal to the actual temperature of the bearing plate. Furthermore, even with the same target set temperature, the actual temperature of the cooled bearing plate will differ depending on the cumulative number of operations.

[0081] For example, the appropriate actual temperature for the carrier plate during the grinding of the same batch of wafers can be determined first. Then, during the testing process, the target set temperature of the chiller can be adjusted to ensure that the carrier plate reaches the set actual temperature.

[0082] For wafer grinding in the same batch at different cumulative job counts, the above optimization process is performed separately to obtain a suitable target set temperature for different cumulative job counts. A temperature adjustment strategy model is established by mapping the actual temperature and target set temperature for different batches and different cumulative job counts.

[0083] For example, training artificial intelligence models or building mathematical models.

[0084] In the above model, for the same batch, the target set temperature usually decreases as the cumulative number of jobs increases, that is, the two are negatively correlated.

[0085] For example, as the cumulative number of operations increases, the target set temperature of the chiller is gradually or in stages reduced to enhance cooling intensity and counteract the heat accumulation effect of the bearing plate.

[0086] For example, the target temperature is lowered each time the cumulative number of operations increases. This method allows for the most precise control.

[0087] For example, the target temperature is lowered only after the cumulative number of operations increases by N, where N is an integer greater than 1, such as 5 to 10 times. This method controls resource consumption relatively less.

[0088] In this implementation, the model is modeled in the manner described above, enabling the model to perform water cooling control based on the actual temperature during use, thereby ensuring the wafer grinding effect.

[0089] S41: During the grinding process of the same batch of wafers using a chemical mechanical polishing (CMP) machine, record the cumulative number of wafers ground.

[0090] In this implementation, the main control device, namely the grinding machine control system, is responsible for starting and counting. For example, the grinding machine control system starts the grinding operation and initializes or reads the current cumulative number of operations (the cumulative number of wafers ground). After each wafer is processed, the counter (e.g., a PLC counter) automatically increments.

[0091] The grinding mill control system includes a batch counting module, which is integrated into the grinding mill main control software (such as the APC unit) for accurately recording and accumulating the number of jobs.

[0092] S42: Based on the temperature adjustment strategy model, output the control command for the target set temperature corresponding to the cumulative number of milled wafers.

[0093] The main control equipment determines the target set temperature corresponding to the cumulative number of wafers ground based on the temperature adjustment strategy model.

[0094] For example, the cumulative number of jobs is input into the temperature adjustment strategy model, and then the target set temperature output by the model is obtained.

[0095] After the main control device determines the target set temperature, it generates and issues commands. That is, it encapsulates the target set temperature into a command protocol that the chiller can recognize.

[0096] For example, the control command includes a target set temperature. This command is sent in real time to the chiller controller via a standard industrial communication interface (such as Ethernet / IP, PROFINET, Modbus TCP, etc.).

[0097] The main control equipment and the chiller can communicate bidirectionally via a communication interface.

[0098] S43: Based on the control command of the target set temperature, perform water cooling temperature control on the chemical mechanical grinding equipment so that the actual temperature of the bearing plate of the chemical mechanical grinding equipment is within the target range.

[0099] The chiller adjusts its compressor power and / or circulation pump speed according to control commands to regulate the temperature of the chilled water output to the cooling channels of the support plate to the target value. Through this precise temperature control, the overall temperature field of the support plate is kept stable, thereby suppressing its thermal expansion deformation and maintaining the angular stability of the working surface.

[0100] For example, the chiller adjusts the compressor power and circulation pump speed based on the control commands output by the main control device to control the water cooling temperature of the chemical mechanical grinding equipment.

[0101] S44: Detect the angle of the bearing plate of the chemical mechanical grinding equipment.

[0102] This step is performed using an angle measuring device, which can be an offline or integrated angle measuring instrument.

[0103] S45: Based on the angle of the bearing plate, correct the actual temperature of the bearing plate of the chemical mechanical grinding equipment.

[0104] In this implementation, the main control device receives the measured bearing plate angle from an offline or integrated angle measuring instrument, which is used to calibrate and optimize the actual temperature of the bearing plate of the chemical mechanical grinding equipment.

[0105] Table 1 below is a comparison table of the actual temperature without using the embodiments of this disclosure and the bearing plate angle with using the embodiments of this disclosure.

[0106] Table 1

[0107] As can be seen from Table 1, the solution provided by the embodiments of this disclosure can ensure that the angle of the bearing plate remains stable as the cumulative number of operations increases, thereby ensuring the process yield.

[0108] Figure 5This is a structural block diagram of a computer device provided in an embodiment of this disclosure. The computer device 400 (e.g., the control unit of the aforementioned main control device or chiller) includes a central processing unit (CPU) 401, a system memory 404 including random access memory (RAM) 402 and read-only memory (ROM) 403, and a system bus 405 connecting the system memory 404 and the central processing unit 401. The computer device 400 also includes a basic input / output system (I / O system) 406 that facilitates the transfer of information between various devices within the computer, and a mass storage device 407 for storing the operating system 413, application programs 414, and other program modules 415.

[0109] The basic input / output system 406 includes a display 408 for displaying information and an input device 409 for user input, such as a mouse or keyboard. Both the display 408 and the input device 409 are connected to the central processing unit 401 via an input / output controller 410 connected to the system bus 405. The basic input / output system 406 may also include the input / output controller 410 for receiving and processing input from multiple other devices such as a keyboard, mouse, or electronic stylus. Similarly, the input / output controller 410 also provides output to a display screen, printer, or other types of output devices.

[0110] Mass storage device 407 is connected to central processing unit 401 via a mass storage controller (not shown) connected to system bus 405. Mass storage device 407 and its associated computer-readable media provide non-volatile storage for computer device 400. That is, mass storage device 407 may include computer-readable media (not shown) such as hard disk or CD-ROM drive.

[0111] Without loss of generality, computer-readable media can include computer storage media and communication media. Computer storage media include volatile and non-volatile, removable and non-removable media implemented using any method or technology for storing information such as computer-readable instructions, data structures, program modules, or other data. Computer storage media include RAM, ROM, EPROM, EEPROM, flash memory or other solid-state storage technologies, CD-ROM, DVD or other optical storage, magnetic tape cassettes, magnetic tape, disk storage, or other magnetic storage devices. Of course, those skilled in the art will recognize that computer storage media are not limited to the above-mentioned types. The system memory 404 and mass storage device 407 described above can be collectively referred to as memory.

[0112] According to various embodiments of this disclosure, computer device 400 can also be connected to a remote computer on a network, such as the Internet. That is, computer device 400 can be connected to network 412 via network interface unit 411 connected to system bus 405, or network interface unit 411 can be used to connect to other types of networks or remote computer systems (not shown).

[0113] The memory also includes one or more programs, which are stored in the memory. The central processing unit 401 implements these programs by executing them. Figure 3 or Figure 4 The temperature control method shown.

[0114] In exemplary embodiments, a non-transitory computer-readable storage medium including instructions is also provided, such as a memory including instructions that can be executed by a processor of a computer device to perform the temperature control methods shown in various embodiments of this disclosure. For example, the non-transitory computer-readable storage medium may be a ROM, random access memory (RAM), CD-ROM, magnetic tape, floppy disk, and optical data storage device, etc.

[0115] The above description is merely an optional embodiment of this disclosure and is not intended to limit this disclosure. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this disclosure should be included within the protection scope of this disclosure.

Claims

1. A temperature control system, characterized in that, The system includes: The main control device is used to record the cumulative number of wafers ground during the grinding process of the same batch of wafers in the chemical mechanical polishing equipment; and to output the control command for the target set temperature corresponding to the cumulative number of wafers ground based on the temperature adjustment strategy model. A chiller is used to control the water cooling temperature of the chemical mechanical grinding equipment based on the control commands output by the main control device, so that the actual temperature of the bearing plate of the chemical mechanical grinding equipment is within the target range.

2. The system according to claim 1, characterized in that, The temperature adjustment strategy model includes at least one batch of wafer temperature adjustment strategies; The temperature adjustment strategy includes the correspondence between the number of wafers and the target set temperature.

3. The system according to claim 2, characterized in that, Different batches of wafers differ in at least one of the following parameters: Grinding process formula, grinding pressure, grinding speed, and grinding fluid flow rate.

4. The system according to any one of claims 1 to 3, characterized in that, The chiller is used to adjust the compressor power and / or circulation pump speed based on the control commands output by the main control device, so as to control the water cooling temperature of the chemical mechanical grinding equipment.

5. The system according to any one of claims 1 to 3, characterized in that, The system also includes: Temperature detection equipment is used to detect the actual temperature of the bearing plate of the chemical mechanical grinding equipment. The main control device is also used to establish the temperature adjustment strategy model by controlling the target set temperature to obtain the same actual temperature when the number of wafers ground in total is different.

6. The system according to any one of claims 1 to 3, characterized in that, The system also includes: An angle measuring device for detecting the angle of the bearing plate of the chemical mechanical grinding equipment; The main control device is also used to correct the actual temperature of the bearing plate of the chemical mechanical grinding equipment based on the angle of the bearing plate.

7. A temperature control method, characterized in that, The method includes: During the grinding process of the same batch of wafers using a chemical mechanical polishing (CMP) machine, the cumulative number of wafers ground is recorded. Based on the temperature adjustment strategy model, a control command for the target set temperature corresponding to the cumulative number of milled wafers is output. Based on the control command for the target set temperature, the chemical mechanical grinding equipment is subjected to water cooling temperature control so that the actual temperature of the bearing plate of the chemical mechanical grinding equipment is within the target range.

8. The method according to claim 7, characterized in that, The temperature adjustment strategy model includes at least one batch of wafer temperature adjustment strategies; The temperature adjustment strategy includes the correspondence between the number of wafers and the target set temperature.

9. The method according to claim 8, characterized in that, Different batches of wafers differ in at least one of the following parameters: Grinding process formula, grinding pressure, grinding speed, and grinding fluid flow rate.

10. The method according to any one of claims 7 to 9, characterized in that, The control command based on the target set temperature for water cooling temperature control of the chemical mechanical grinding equipment includes: Based on the control command for the target set temperature, the compressor power and / or the circulation pump speed are adjusted to control the water cooling temperature of the chemical mechanical grinding equipment.

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