A two-dimensional amorphous carbon semiconductor material and a method for preparing the same

Abstract

The application relates to a two-dimensional amorphous carbon semiconductor material and a preparation method thereof. The material is a two-dimensional sheet structure, carbon atoms are arranged in a short-range ordered and long-range disordered state, the mass percentage of carbon elements in the material is greater than 60%, and the material is doped with at least one element of hydrogen, nitrogen, oxygen and sulfur; the material is a porous structure, the pore size is 1nm-50nm; the thickness is 0.5nm-100nm, the lateral size is 0.05mu m-5000mu m, the material is an n-type semiconductor, and the band gap is 0.3eV-4eV. The preparation method comprises the following steps: mechanically mixing organic dyes with photothermal materials, laying the mixed materials on a heat-resistant flat plate substrate, placing the substrate in a reaction container with a quartz sheet at the top, and irradiating the organic dyes with a laser under inert atmosphere or vacuum condition to pyrolyze the organic dyes, and the two-dimensional amorphous carbon semiconductor material is obtained. The method does not need a template agent, is simple in process, low in cost, and can realize large-scale production, realizes high-value conversion of low-value organic dyes, and has wide application prospects in the fields of semiconductors, photoelectricity, catalysis and the like.

Description

Technical Field

[0001] This invention relates to the field of semiconductor materials technology, specifically to a two-dimensional amorphous carbon semiconductor material and its preparation method. Background Technology

[0002] The arrival of the post-Moore's Law era has presented unprecedented challenges to the global semiconductor industry. As integrated circuit feature sizes continue to shrink, silicon-based chips are approaching the physical limit of 1nm. Problems such as short-channel effects, leakage current heating, and insufficient carrier mobility are becoming increasingly prominent. The potential for improving breakdown voltage and integration density is limited, making it difficult to meet the core demands of next-generation electronic devices for miniaturization, high performance, and low power consumption. Therefore, the search for novel semiconductor materials and fabrication methods has become a research hotspot and urgent need in the global semiconductor field.

[0003] Unlike traditional three-dimensional semiconductors, the electronic movement of two-dimensional materials is confined to a two-dimensional plane. This quantum confinement effect gives them unique electrical, optical, and mechanical properties, making them one of the core candidate systems for continuing Moore's Law in the post-Moore era. Two-dimensional carbon-based semiconductors, including graphene, graphyne, and graphene nanoribbons, have attracted widespread attention due to the abundant bonding methods of carbon and their unique physicochemical properties. Although existing two-dimensional carbon-based semiconductors possess carrier mobilities far exceeding those of silicon-based materials (exceeding 100,000 cm⁻¹),... 2 While graphene boasts excellent thermal conductivity and mechanical strength, its lack of a band gap, the high difficulty in precisely synthesizing graphdiene and graphene nanoribbons presents numerous intractable bottlenecks in the transition from basic research to industrial mass production.

[0004] Two-dimensional amorphous carbon materials refer to two-dimensional carbon-based thin film materials with atomic-level thickness (usually a single layer or a few layers) and a lack of long-range order in the arrangement of carbon atoms, but with short-range order. This disordered structure results in a large number of defects on its surface (such as dangling bonds, vacancy defects, hybrid defects, etc.), and these defects endow it with tunable semiconductor properties and functional modifications. Currently, a small number of studies have determined the properties of two-dimensional amorphous carbon and clearly identified it as a type of semiconductor material (Nature, 2023, 615, 56-61; Nature, 2024, 634, 80-84; Nature, 2020, 577, 199-203). The main methods for synthesizing two-dimensional amorphous carbon include chemical vapor deposition, chemical template method, and Langmuir-Blodgett (LB) thin film high-temperature pyrolysis method. Among these synthetic methods, chemical vapor deposition (CVD) is the most widely used. For example, Barbaros et al. (Nature, 2020, 577, 199-203) successfully grew a single-atom-thick amorphous carbon layer on a metal substrate using laser-assisted CVD with methane or acetylene as the carbon source and an argon / hydrogen mixture as the protective gas. Thermal-plasma-coupled CVD can also be used to synthesize two-dimensional amorphous carbon (Nature, 2023, 615, 56-61; Nature Nanotechnology, 2025, 20, 1431-1438). In addition, Guo et al. (Nature, 2024, 634, 80-84) used layered hydrogen hydroxides (LDHs) as removable templates to confine nitrogen-containing precursors such as pyrrole within the interlayer cavities. They then initiated a free radical polymerization reaction using persulfate, and after template removal, obtained a freely standing nitrogen-doped amorphous carbon monolayer. In addition, Liu et al. (Advanced Science, 2024, 11, 2308187.) modified fullerenes (such as DMMC) 60 By forming a monolayer at the water-air interface using LB technology, transferring it to a silicon wafer, and then performing rapid thermal treatment (RTP, 500℃, Ar atmosphere, 30 seconds) for pyrolysis crosslinking, a centimeter-scale nanoporous amorphous carbon monolayer was successfully prepared.

[0005] Although the above methods have shown certain advantages in the synthesis of two-dimensional amorphous carbon, they still have many shortcomings: 1) Chemical vapor deposition requires precise optimization of conditions such as reaction temperature, substrate type, carbon source type and protective gas ratio, and the uniformity and cleanliness of the product are severely limited; 2) Although chemical template method can achieve controllable synthesis of two-dimensional amorphous carbon doped with different elements, it is limited by cumbersome experimental steps such as template preparation and removal, which may not only damage the structural integrity of the material, but also make it difficult to achieve large-scale production of the product; 3) Although LB film conversion method is feasible, it is limited by the fact that the precursor material needs to undergo multiple modifications and the preparation conditions are relatively harsh, making it difficult to achieve large-scale preparation. Summary of the Invention

[0006] One of the objectives of this invention is to provide a method for preparing two-dimensional amorphous carbon semiconductor materials, which is simple in process, low in cost, and easy to scale up for production.

[0007] The second objective of this invention is to provide a novel two-dimensional amorphous carbon semiconductor material to solve the problems of difficult bandgap control, complex preparation process, and difficulty in large-scale production of existing two-dimensional carbon-based semiconductor materials.

[0008] To achieve the above objectives, the specific solution adopted by the present invention is as follows: In a first aspect, the present invention provides a method for preparing a two-dimensional amorphous carbon semiconductor material, comprising the following steps: (1) The organic dye and the photothermal material are mechanically mixed at a mass ratio of 1:0.001 to 1:100 to obtain a homogeneous mixture; (2) The mixture obtained in step (1) is evenly spread on a heat-resistant flat substrate, and the spreading thickness is controlled to be 0.01 mm to 100 mm; (3) Place the substrate with the mixture obtained in step (2) into a reaction vessel with a quartz plate on top, and seal the vessel; (4) The reaction atmosphere is formed by one of the following methods: Method 1: Inert gas is introduced into the reaction vessel; Method 2: Pump the pressure inside the reaction vessel down to below 0.001 MPa; (5) Under a reactive atmosphere, the mixture obtained in step (2) is irradiated with a laser through a quartz plate, with a laser power of 0.01 W / cm². 2 ~10000W / cm 2 The irradiation time is from 0.001s to 86400s, and the remaining product after irradiation is a two-dimensional amorphous carbon semiconductor material.

[0009] Further, in step (1), the organic dye is at least one of the following dyes: Congo Red, Rhodamine B, Orange G, Methyl Orange, Methyl Blue, Tibetan Orange G, Acid Orange 7, Acid Red 13, Acid Orange 17, Acid Red 18, Acid Red 44, and Acid Red 73.

[0010] Further, in step (1), the photothermal material is a carbon-based material, a metal and its composite material, a chalcogenide compound or a transition metal carbonitride.

[0011] Furthermore, the carbon-based materials include, but are not limited to, any one or more of graphite, coal powder, graphene, activated carbon, carbon nanotubes, or porous carbon; the metals and their composite materials include, but are not limited to, any one or more of gold, silver, etc.; the chalcogenide compounds include, but are not limited to, any one or more of black titanium dioxide, iron oxide, copper oxide, copper sulfide, molybdenum disulfide, tantalum disulfide, and molybdenum ditelluride; and the transition metal carbonitrides include, but are not limited to, any one or more of aluminum carbonitride, titanium carbonitride, aluminum carbonitride, and tantalum carbonitride.

[0012] Furthermore, in step (1), the mechanical mixing time is 0.01h to 24h.

[0013] Further, in step (2), the heat-resistant flat substrate includes, but is not limited to, any one or more of the following: silica aerogel plate, aluminum plate, iron plate, titanium plate, heat-resistant glass or molybdenum plate.

[0014] Further, in step (4), the inert gas is any one or more of inert gases such as nitrogen, argon or helium; the flow rate of the inert gas is 0.001 mL / min to 1000 mL / min, and the gas flow time is 0.1 s to 86400 s.

[0015] Secondly, the present invention provides a two-dimensional amorphous carbon semiconductor material, which is prepared by the above method.

[0016] Furthermore, the material has a two-dimensional layered structure and satisfies the following characteristics: (1) The material contains more than 60% carbon by mass and is doped with at least one of hydrogen, nitrogen, oxygen and sulfur; (2) The material has a porous structure with a pore size of 1 nm to 50 nm; (3) The thickness of the material is 0.5 nm to 100 nm, and the lateral dimension is 0.05 μm to 5000 μm; (4) The material is an n-type semiconductor with a band gap of 0.3eV to 4eV.

[0017] Beneficial effects: (1) This invention provides a novel two-dimensional amorphous carbon semiconductor material, whose structural features and performance advantages are reflected in: (a) the material thickness of this invention is 0.5 nm to 100 nm, and the lateral dimension is 0.05 μm to 5000 μm, exhibiting a typical two-dimensional layered structure, which is beneficial for realizing high-speed electron transport in high-performance electronic devices; (b) the pore size of the material is 1 nm to 50 nm, forming abundant nanopores. This porous structure increases the specific surface area of ​​the material on the one hand, which is beneficial for exposing active sites in applications such as catalysis and sensing, and on the other hand, it helps to adjust the electronic band structure of the material and optimize it. Its semiconductor properties; (c) The material of the present invention is an n-type semiconductor with a band gap of 0.3eV to 4eV, which can be effectively controlled by adjusting the type of organic dye, the proportion of photothermal material and the laser irradiation conditions. This band gap range gives it broad application potential in photovoltaic devices, photodetectors, light-emitting diodes and other fields; (d) The material is doped with at least one element from hydrogen, nitrogen, oxygen and sulfur. These doping elements are derived from organic dye precursors and can be introduced in situ during pyrolysis without additional doping steps. The introduction of doping elements can effectively control the band structure and carrier concentration of the material and improve the semiconductor properties of the material.

[0018] (2) The preparation method of the present invention is simple and flexible. Specifically: no template agent or surfactant is required, avoiding the structural damage and additional pollution problems caused by template removal in the prior art; the preparation process is carried out under normal or low pressure, and the laser power and irradiation time have a wide process adjustment window. Compared with the chemical vapor deposition method, which requires precise control of a variety of harsh conditions, the process tolerance is higher; the present invention provides two ways to form a reaction atmosphere: introducing inert gas or evacuating. Both methods have no effect on the product structure and can be flexibly selected according to the actual equipment and process conditions; after laser irradiation, the remaining product is the target material, without the need for additional purification, separation or post-processing steps, realizing true one-step molding and significantly shortening the preparation cycle.

[0019] (3) The present invention has significant cost advantages and outstanding economic benefits. On the one hand, the organic dyes used are bulk chemical products, and the photothermal materials such as activated carbon, coal powder, and metal oxides are common industrial raw materials with extremely low costs. Compared with the high-purity methane, acetylene, and other gaseous carbon sources or precursors with special structures used in the prior art, the raw material costs are significantly reduced. On the other hand, the present invention only requires conventional equipment such as lasers and reaction vessels, without the need for complex vacuum coating systems, high-temperature tube furnaces, or precision gas control systems. The laser irradiation time is short and the energy consumption is low. Through the preparation method of the present invention, the preparation cost of two-dimensional carbon-based semiconductor materials can be reduced to below 1,000 yuan / kg, laying an economic foundation for the large-scale application of the materials.

[0020] (4) This invention can be mass-produced, breaking through industrialization bottlenecks. The method of this invention can prepare hundreds of grams of two-dimensional carbon-based semiconductor materials in one go. Compared with the existing technologies, chemical vapor deposition is usually grown on a square centimeter scale and LB film conversion is difficult to prepare on a large scale, which has a significant advantage in yield. The preparation process adopts simple mechanical mixing, laying and laser irradiation. Each step can be directly scaled up. Large-scale continuous production can be achieved by increasing the substrate area and using multi-laser head arrays. Since the laser irradiation conditions are easy to control precisely and the reaction process is not affected by complex factors such as substrate type and gas flow distribution, the products of this invention have excellent batch repeatability and structural uniformity, which is beneficial to subsequent device preparation and application development.

[0021] (5) This invention has significant environmental benefits and conforms to the concept of green manufacturing. This invention transforms low-value organic dyes into high-value-added two-dimensional carbon-based semiconductor materials, realizing the resource utilization of waste and turning waste into treasure. The entire preparation process only involves organic dyes, photothermal materials, and inert gases, without the need for strong acids, strong alkalis, organic solvents, or toxic and harmful chemical reagents, thus avoiding the environmental pollution problems commonly encountered in the preparation of traditional semiconductor materials. During laser irradiation, the organic dyes undergo rapid pyrolysis, and the products are carbon materials and small molecule gases such as water vapor and carbon dioxide, with no toxic or harmful substances emitted, which is a typical clean production process.

[0022] (6) This invention has broad application prospects and huge market potential. The two-dimensional amorphous carbon semiconductor material of this invention has a suitable band gap and good electronic transport properties, and can be used to prepare core electronic devices such as field-effect transistors and logic circuits. It is expected to replace or supplement traditional silicon-based materials in the post-Moore era. The band gap of the material is 0.3eV to 4eV, and it can be used to prepare optoelectronic devices such as solar cells, photodetectors, and light-emitting diodes. In addition, the material has a two-dimensional layered structure, porous characteristics and abundant doping elements, which can expose a large number of active sites, showing application potential in electrocatalysis, photocatalysis, gas sensing, and biosensing. At the same time, the material is thin, foldable and has good mechanical flexibility, and can be applied to emerging fields such as flexible displays and wearable electronic devices.

[0023] In summary, this invention achieves groundbreaking innovations in material structure, preparation process, cost control, large-scale production, environmental benefits, and application prospects. Compared with existing technologies, this invention not only solves the core problems of complex preparation processes, high costs, and difficulty in large-scale production of two-dimensional carbon-based semiconductor materials, but also realizes the high-value transformation of low-value waste. It combines technological advancement, economic feasibility, and social benefits, and is a complete technical solution with high industrial application value. Attached Figure Description

[0024] Figure 1Scanning electron microscope image of the two-dimensional amorphous carbon semiconductor material prepared in Example 1.

[0025] Figure 2 The image is a transmission electron microscope image of the two-dimensional amorphous carbon semiconductor material prepared in Example 1.

[0026] Figure 3 The image shows the Raman spectrum of the two-dimensional amorphous carbon semiconductor material prepared in Example 1.

[0027] Figure 4 The image shows the spectral band gap of the two-dimensional amorphous carbon semiconductor material prepared in Example 1.

[0028] Figure 5 The image shows a scanning electron microscope image of the two-dimensional amorphous carbon semiconductor material prepared in Example 2.

[0029] Figure 6 The image shows the Raman spectrum of the two-dimensional amorphous carbon semiconductor material prepared in Example 2.

[0030] Figure 7 The image shows the spectral band gap of the two-dimensional amorphous carbon semiconductor material prepared in Example 2. Detailed Implementation

[0031] The technical solution of the present invention will be clearly and completely described below with reference to specific embodiments. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present invention.

[0032] This invention provides a two-dimensional amorphous carbon semiconductor material with a two-dimensional layered structure in which carbon atoms are arranged in a short-range ordered and long-range disordered state. In terms of composition, the material contains more than 60% carbon by mass and is doped with at least one element selected from hydrogen, nitrogen, and oxygen. These dopants originate from the organic dyes used in the preparation process; during the pyrolysis process under laser irradiation, some non-carbon elements are retained in the product, forming dopant. Structurally, the material is porous with pore sizes ranging from approximately 1 nm to 50 nm. This porous structure is due to both the pores formed by the release of gases during the rapid pyrolysis of the organic dyes and the template effect of the photothermal material. The material has a thickness of approximately 0.5 nm to 100 nm and a lateral dimension of approximately 0.05 μm to 5000 μm, exhibiting typical morphological characteristics of two-dimensional materials. Electrically, the material is an n-type semiconductor with a band gap of approximately 0.3 eV to 4 eV, which can be controlled by adjusting the type of organic dye, the proportion of photothermal material, and the laser irradiation conditions.

[0033] This invention also provides a method for preparing the above-mentioned two-dimensional amorphous carbon semiconductor material, the specific operation steps of which are as follows: Step (1), Mixing: The organic dye and photothermal material are mechanically mixed at a mass ratio of 1:0.001 to 1:100 for 0.01 h to 24 h until a homogeneous mixture is obtained. In this step, the organic dye acts as a carbon source and precursor, undergoing pyrolysis and carbonization under laser irradiation to form the main structure of a two-dimensional amorphous carbon material. The role of the photothermal material is to absorb laser energy and convert it into heat energy, generating high temperatures locally to promote the rapid pyrolysis of the organic dye. The ratio of organic dye to photothermal material needs to be properly controlled: if the ratio of photothermal material is too low, it will not provide enough heat to fully carbonize the organic dye; if the ratio of photothermal material is too high, it may result in excessive residual photothermal material in the product, affecting the purity of the semiconductor material. Mechanical mixing enables the organic dye and photothermal material to come into full contact, ensuring that heat can be uniformly transferred during laser irradiation, thereby obtaining a two-dimensional amorphous carbon material with a uniform structure. Step (2), Laying: The mixture obtained in step (1) is evenly laid on a heat-resistant flat substrate, with the laying thickness controlled to be 0.01 mm to 100 mm. In this step, the heat-resistant flat substrate serves to support the mixture and withstand high temperatures during laser irradiation. Substrate materials include, but are not limited to, silica aerogel plates, aluminum plates, iron plates, titanium plates, heat-resistant glass, molybdenum plates, etc. These materials have high thermal stability and chemical inertness and will not react adversely with the reactants at high temperatures. Controlling the laying thickness is crucial: if the thickness is too thin, the amount of material per unit area will be insufficient, resulting in a low yield; if the thickness is too thick, the laser may not be able to penetrate the upper layer of material, leading to insufficient carbonization of the lower layer of material and affecting the uniformity of the product. Step (3), Filling: Place the substrate obtained in step (2) into a reaction vessel with a quartz plate on top and seal the vessel to ensure the stability of the subsequent reaction atmosphere. In this step, the top of the reaction vessel is made of quartz plate because quartz has high transmittance to lasers, which can ensure that laser energy is effectively transferred to the sample surface. At the same time, the quartz plate can also withstand the high temperature generated by laser irradiation. Step (4) Forming a reaction atmosphere: The reaction atmosphere is formed by one of the following methods: Method 1: Inert gas is introduced into the reaction vessel at a flow rate of 0.001 mL / min to 1000 mL / min and a gas introduction time of 0.1 s to 86400 s. Method 2: Pump the pressure inside the reaction vessel down to below 0.001 MPa; In this step, the purpose of creating a specific reaction atmosphere is to provide a protective environment for the laser pyrolysis process. Method one involves introducing an inert gas (such as nitrogen, argon, or helium) to purge the air from the reaction vessel, creating an inert atmosphere and preventing the organic dyes from oxidizing and burning at high temperatures. Method two involves creating a low-pressure environment through vacuuming, which also avoids oxidation. Neither method affects the structure of the product, and the choice can be made flexibly based on the actual equipment and process conditions. Step (5) Laser irradiation: Under the reaction atmosphere, the mixture obtained in step (2) is irradiated with a laser through a quartz plate, with a laser power of 0.01 W / cm². 2 ~10000W / cm 2 The irradiation time ranges from 0.001 s to 86400 s, and the remaining product after irradiation is a two-dimensional amorphous carbon semiconductor material. This step is the core step in material synthesis. A laser irradiates the surface of the mixture through a quartz sheet. The photothermal material absorbs the laser energy and rapidly converts it into heat energy, generating extremely high temperatures locally (up to several thousand degrees Celsius). Under these high-temperature conditions, the organic dye undergoes rapid pyrolysis, breaking carbon-carbon bonds, carbon-hydrogen bonds, etc., and the carbon atoms rearrange to form a short-range ordered, long-range disordered amorphous carbon structure. Due to the extremely rapid pyrolysis process, the carbon atoms cannot achieve long-range ordered arrangement, thus forming a two-dimensional amorphous carbon structure. Simultaneously, some heteroatoms (such as nitrogen and oxygen) from the organic dye remain in the product, forming dopant. The gases generated during pyrolysis escape, leaving nanoscale pores in the material, forming a porous structure. The presence of the reaction atmosphere ensures that the pyrolysis process takes place in a non-oxidizing environment, preventing the material from being oxidized and damaged. Step (6), Post-processing of the product: After laser irradiation, the reaction vessel is naturally cooled to room temperature, and the remaining product is a two-dimensional amorphous carbon semiconductor material. Since the photothermal material in the method of this invention is tightly combined with the carbon material after laser irradiation, and the purity of the product already meets the application requirements, no additional purification step is required, further simplifying the process.

[0034] The technical solution of the present invention will be further described below with reference to specific embodiments. Example 1

[0035] This embodiment provides a method for preparing a two-dimensional amorphous carbon semiconductor material, and the specific operation steps are as follows: (1) Congo red and activated carbon were mechanically mixed at a mass ratio of 1:0.25 for 1 hour until homogeneous to obtain a Congo red-activated carbon mixture; (2) Place an appropriate amount of mixture on the molybdenum plate and spread it to a thickness of 1 mm; (3) Place the above substrate in a reaction vessel with a quartz cover and a gas inlet and outlet, and then seal any other leaks. (4) Introduce nitrogen into the gas inlet and purge at a flow rate of 1 mL / min for 30 min to fill the mixture obtained in step (1) with inert gas. (5) With a power of 20W / cm 2 The laser irradiates the sample through a quartz plate for 300 seconds, and the remaining product obtained is a two-dimensional amorphous carbon semiconductor material.

[0036] The product obtained in Example 1 was tested, and attached... Figure 1 The image shown is a scanning electron microscope image, in which the presence of a large amount of lamellar material can be clearly observed; (Attached) Figure 2 The image shown is a transmission electron microscope image, clearly confirming that the material exists in the form of a two-dimensional foldable sheet; (Attached) Figure 3 The image shown is a Raman spectrum, indicating the presence of a D peak (1350 cm⁻¹) in the sample. -1 ) and G peak (1580cm) -1 This confirms that the material is a carbon material; (attached) Figure 4 The image shown is a spectral bandgap image; the bandgap of this material is approximately 1.77 eV. Example 2

[0037] This embodiment provides a method for preparing a two-dimensional amorphous carbon semiconductor material, and the specific operation steps are as follows: (1) Orange G and molybdenum disulfide were mechanically mixed at a mass ratio of 1:0.20 for 2 hours until homogeneous to obtain an orange G-molybdenum disulfide mixture; (2) Place an appropriate amount of the mixture on the molybdenum plate and spread it to a thickness of 0.5 mm; (3) Place the above substrate in a reaction vessel with a quartz cover and a gas inlet and outlet, and then seal any other leaks. (4) Argon gas is introduced into the gas inlet and purged at a flow rate of 5 mL / min for 5 min to fill the mixture obtained in step (1) with inert gas. (5) With a power of 40W / cm 2 The laser irradiates the sample through a quartz plate for 5 seconds, and the remaining product obtained is a two-dimensional amorphous carbon semiconductor material.

[0038] The product obtained in Example 2 was tested, and attached... Figure 5 The image shown is a scanning electron microscope image, in which the presence of a large amount of lamellar material can be clearly observed; (Attached) Figure 6 The image shown is a Raman spectrum, indicating the presence of a D peak (1350 cm⁻¹) in the sample. -1 ) and G peak (1580cm) -1 This confirms that the material is a carbon material; (attached) Figure 7 The image shown is a spectral bandgap image; the bandgap of this material is approximately 1.78 eV. Example 3

[0039] This embodiment provides a method for preparing a two-dimensional amorphous carbon semiconductor material, and the specific operation steps are as follows: (1) Methyl orange and molybdenum disulfide were mechanically mixed at a mass ratio of 1:0.50 for 5 hours until homogeneous to obtain a methyl orange-molybdenum disulfide mixture; (2) Place an appropriate amount of the mixture on the aluminum plate and spread it to a thickness of 1 mm; (3) Place the above substrate in a reaction vessel with a quartz cover and a gas inlet and outlet, and then seal any other leaks. (4) Argon gas is introduced into the gas inlet and purged at a flow rate of 10 mL / min for 10 min to fill the mixture obtained in step (1) with inert gas. (5) With a power of 60W / cm 2 The laser irradiates the sample through a quartz plate for 2 seconds, and the remaining product obtained is a two-dimensional amorphous carbon semiconductor material. Example 4

[0040] This embodiment provides a method for preparing a two-dimensional amorphous carbon semiconductor material, and the specific operation steps are as follows: (1) Acid Orange 17 and copper sulfide were mechanically mixed at a mass ratio of 1:0.50 for 5 hours until homogeneous to obtain an Acid Orange 17-copper sulfide mixture; (2) Place an appropriate amount of the mixture on the aluminum plate and spread it to a thickness of 1 mm; (3) Place the above substrate in a reaction vessel with a quartz cover and a gas inlet and outlet, and then seal any other leaks. (4) Argon gas is introduced into the gas inlet and purged at a flow rate of 10 mL / min for 10 min to fill the mixture obtained in step (1) with inert gas. (5) With a power of 30W / cm 2 The laser irradiates the sample through a quartz plate for 2 seconds, and the remaining product obtained is a two-dimensional amorphous carbon semiconductor material. Example 5

[0041] This embodiment provides a method for preparing a two-dimensional amorphous carbon semiconductor material, and the specific operation steps are as follows: (1) Methyl orange and molybdenum ditelluride powder were mechanically mixed at a mass ratio of 1:0.50 for 5 hours until homogeneous to obtain a methyl orange-molybdenum ditelluride mixture; (2) Place an appropriate amount of mixture on the iron plate and spread it to a thickness of 1 mm; (3) Place the above substrate in a reaction vessel with a quartz cover and a gas inlet and outlet, and then seal any other leaks. (4) Argon gas is introduced into the gas inlet and purged at a flow rate of 10 mL / min for 10 min to fill the mixture obtained in step (1) with inert gas. (5) With a power of 60W / cm 2 The laser irradiates the sample through a quartz plate for 2 seconds, and the remaining product obtained is a two-dimensional amorphous carbon semiconductor material. Example 6

[0042] This embodiment provides a method for preparing a two-dimensional amorphous carbon semiconductor material, and the specific operation steps are as follows: (1) Acid Red 18 and aluminum carbonitride powder were mechanically mixed at a mass ratio of 1:0.50 for 5 hours until homogeneous to obtain an Acid Red 18-aluminum carbonitride mixture; (2) Place an appropriate amount of the mixture on the aluminum plate and spread it to a thickness of 1 mm; (3) Place the above substrate in a reaction vessel with a quartz cover and a gas inlet and outlet, and then seal any other leaks. (4) Argon gas is introduced into the gas inlet and purged at a flow rate of 5 mL / min for 10 min to fill the mixture obtained in step (1) with inert gas. (5) With a power of 60W / cm 2 The laser irradiates the sample through a quartz plate for 1 second, and the remaining product obtained is a two-dimensional amorphous carbon semiconductor material. Example 7

[0043] This embodiment provides a method for preparing a two-dimensional amorphous carbon semiconductor material, and the specific operation steps are as follows: (1) Methyl orange and graphite powder were mechanically mixed at a mass ratio of 1:1.00 for 5 hours until homogeneous to obtain a methyl orange-graphite mixture; (2) Place an appropriate amount of the mixture on the aluminum plate and spread it to a thickness of 1 mm; (3) Place the above substrate in a reaction vessel with a quartz cover and a gas inlet and outlet, and then seal any other leaks. (4) Argon gas is introduced into the gas inlet and purged at a flow rate of 10 mL / min for 10 min to fill the mixture obtained in step (1) with inert gas. (5) With a power of 60W / cm 2 The laser irradiates the sample through a quartz plate for 2 seconds, and the remaining product obtained is a two-dimensional amorphous carbon semiconductor material.

[0044] In summary, this invention provides a two-dimensional amorphous carbon semiconductor material and its preparation method. This material possesses a two-dimensional layered structure, porous characteristics, suitable band gap width, and appropriate doping elements, exhibiting excellent overall performance. The preparation method involves mechanically mixing an organic dye with a photothermal material, then depositing the mixture onto a substrate, followed by rapid pyrolysis under inert atmosphere or vacuum conditions via laser irradiation to obtain the target product in one step. Examples 1-3 above, using different organic dyes, photothermal materials, and process parameters, all successfully prepared two-dimensional amorphous carbon semiconductor materials. The method of this invention is simple, requires no template agent, is low-cost, and can be mass-produced. Furthermore, it achieves the high-value conversion of low-value organic dyes, showing broad application prospects in semiconductor devices, optoelectronics, catalysis, sensing, and flexible electronics.

[0045] The above description is merely a preferred embodiment of the present invention and is not intended to limit the scope of protection of the present invention. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present invention should be included within the scope of protection of the present invention.

Claims

1. A method for preparing a two-dimensional amorphous carbon semiconductor material, characterized in that, Includes the following steps: (1) The organic dye and the photothermal material are mechanically mixed at a mass ratio of 1:0.001 to 1:100 to obtain a homogeneous mixture; (2) The mixture obtained in step (1) is evenly spread on a heat-resistant flat substrate, and the spreading thickness is controlled to be 0.01 mm to 100 mm; (3) Place the substrate with the mixture obtained in step (2) into a reaction vessel with a quartz plate on top, and seal the vessel; (4) The reaction atmosphere is formed by one of the following methods: Method 1: Inert gas is introduced into the reaction vessel; Method 2: Pump the pressure inside the reaction vessel down to below 0.001 MPa; (5) Under a reactive atmosphere, the mixture obtained in step (2) is irradiated with a laser through a quartz plate, with a laser power of 0.01 W / cm². 2 ~10000W / cm 2 The irradiation time is from 0.001s to 86400s, and the remaining product after irradiation is a two-dimensional amorphous carbon semiconductor material.

2. The method for preparing a two-dimensional amorphous carbon semiconductor material according to claim 1, characterized in that, In step (1), the organic dye is at least one of Congo Red, Rhodamine B, Orange G, Methyl Orange, Methyl Blue, Tibetan Orange G, Acid Orange 7, Acid Red 13, Acid Orange 17, Acid Red 18, Acid Red 44, and Acid Red 73.

3. The method for preparing a two-dimensional amorphous carbon semiconductor material according to claim 1, characterized in that, In step (1), the photothermal material is a carbon-based material, a metal and its composite material, a chalcogenide compound or a transition metal carbonitride.

4. The method for preparing a two-dimensional amorphous carbon semiconductor material according to claim 3, characterized in that, The carbon-based material is any one or more of graphite, coal powder, graphene, activated carbon, carbon nanotubes, or porous carbon; the metal is one or more of gold, silver, etc.; the chalcogenide compound includes, but is not limited to, any one or more of black titanium dioxide, iron oxide, copper oxide, copper sulfide, molybdenum disulfide, tantalum disulfide, and molybdenum ditelluride; the transition metal carbonitride includes, but is not limited to, any one or more of aluminum carbonitride, titanium carbonitride, aluminum carbonitride, and tantalum carbonitride.

5. The method for preparing a two-dimensional amorphous carbon semiconductor material according to claim 1, characterized in that, In step (1), the mechanical mixing time is 0.01h to 24h.

6. The method for preparing a two-dimensional amorphous carbon semiconductor material according to claim 1, characterized in that, In step (2), the heat-resistant flat substrate is any one or more of the following: silica aerogel board, aluminum plate, iron plate, titanium plate, heat-resistant glass or molybdenum plate.

7. The method for preparing a two-dimensional amorphous carbon semiconductor material according to claim 1, characterized in that, In step (4), the inert gas is any one or more of nitrogen, argon or helium; the flow rate of the inert gas is 0.001 mL / min to 1000 mL / min, and the gas flow time is 0.1 s to 86400 s.

8. A two-dimensional amorphous carbon semiconductor material, characterized in that, It is prepared by the method described in any one of claims 1-7.

9. A two-dimensional amorphous carbon semiconductor material according to claim 8, characterized in that, The material has a two-dimensional layered structure and satisfies the following characteristics: (1) The material contains more than 60% carbon by mass and is doped with at least one of hydrogen, nitrogen, oxygen and sulfur; (2) The material has a porous structure with a pore size of 1 nm to 50 nm; (3) The thickness of the material is 0.5 nm to 100 nm, and the lateral dimension is 0.05 μm to 5000 μm; (4) The material is an n-type semiconductor with a band gap of 0.3eV to 4eV.

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