Titanium-based thin film, method for preparing the same, and use thereof

Abstract

The application belongs to the technical field of thin films, and discloses a titanium-based thin film and a preparation method and application thereof. The titanium-based thin film is deposited by a titanium-based target material. Raw materials for preparing the titanium-based target material include a titanium-based material and a doped metal oxide. The doped metal oxide is selected from tantalum oxide and / or niobium oxide. The mass ratio of the doped metal oxide to the titanium-based material is (12-47):(53-88). The application introduces Ta2O5 and / or Nb2O5, a kind of doped metal oxide with a melting point slightly higher than Ti, into the titanium-based target material, so that the target material realizes collaborative sublimation and stable evaporation in the reactive physical deposition process, thereby obtaining a titanium-based target material with anti-melting performance. Meanwhile, the proportion of the doped metal oxide such as Ta2O5 and Nb2O5 in the titanium-based target material is quantitatively designed to quantitatively control the composition of the titanium-based thin film, so as not to hinder the normal deposition of the thin film on the premise of ensuring that the target material does not melt.

Description

Technical Field

[0001] This invention belongs to the field of thin film technology, specifically relating to a titanium-based thin film, its preparation method, and its application. Background Technology

[0002] Titanium-based thin films are widely used in semiconductor devices, optoelectronic thin films, and functional coatings due to their excellent conductivity, corrosion resistance, and good process compatibility. However, in the actual preparation process of existing titanium-based thin films, the film composition is often significantly affected by deposition process parameters, plasma state, and fluctuations in the reaction atmosphere. This makes it difficult to precisely control the ratio of metal elements to oxygen elements in the film, resulting in poor repeatability of dopant content, which in turn affects the electrical properties, structural stability, and long-term reliability of the film. Especially when introducing high-melting-point metal oxides such as Ta and Nb as functional dopants, traditional methods often rely on atmosphere conditioning or post-treatment to achieve composition control, which has problems such as limited control range, uneven composition distribution, and narrow process window, making it difficult to meet the requirements for precise and controllable film composition.

[0003] Therefore, developing a titanium-based thin film with precisely controllable composition has significant practical implications. Summary of the Invention

[0004] The present invention aims to at least solve one of the technical problems existing in the prior art. To this end, the present invention proposes a titanium-based thin film, its preparation method, and its application, wherein the composition of the titanium-based thin film can be precisely controlled by reverse control of the target material composition.

[0005] The inventive concept of this invention is as follows: Due to the harsh deposition environment of titanium-based thin films and the high reactivity of Ti, which easily forms multiphase structures, Ti-based materials exhibit poor stability. During the deposition process, the Ti-based target material used for deposition readily forms a molten pool, resulting in the Ti-based target material's composition remaining only on the target substrate and failing to effectively ionize, sublimate, and deposit onto the substrate. To address this technical problem, this invention proposes a titanium-based thin film with controllable composition. By introducing doped metal oxides such as Ta₂O₅ and / or Nb₂O₅, whose melting points are slightly higher than Ti, into the titanium-based target material and quantitatively designing the doping ratio, the target material achieves synergistic sublimation and stable evaporation during reactive physical deposition. Not only does this give titanium-based targets a higher thermal stability window from a thermodynamic perspective, but doped metal oxides such as Ta2O5 and Nb2O5 can also partially sublimate and ionize along with Ti, depositing on the thin film. Moreover, at the mesoscopic level, doped metal oxides such as Ta2O5 and Nb2O5 can form an ordered and interconnected framework network within the target matrix. During the coating process, this network provides resistance to ion beam impact and thermal shock stability, offering support while the uniform and ordered structure does not hinder the normal ionization and sublimation of Ti, allowing Ti to be successfully deposited on the substrate through the gaps between doped metal oxides such as Ta2O5 and Nb2O5.

[0006] Therefore, this invention utilizes the differences in thermal stability and evaporation behavior between titanium-based materials and doped metal oxides. By controlling the proportion of doped metal oxides such as Ta₂O₅ and Nb₂O₅ in the target material, the composition of the titanium-based thin film can be quantitatively controlled, ensuring that the target material does not melt and that normal film deposition is not hindered. Small amounts of Ta and / or Nb elements can be introduced without significantly affecting the titanium-dominant deposition, thereby achieving controllable deposition of the film with Ti and O as the main elements and Ta and / or Nb as secondary elements. This achieves the research and development goal of precisely controlling the film composition through the reverse control of the target material composition.

[0007] To solve the above-mentioned technical problems, the first aspect of the present invention provides a titanium-based thin film, wherein the titanium-based thin film is deposited by a titanium-based target, and the raw materials for preparing the titanium-based target include titanium-based materials and doped metal oxides, wherein the doped metal oxides are selected from tantalum oxide and / or niobium oxide, and the mass ratio of the doped metal oxides to the titanium-based materials is (12-47):(53-88).

[0008] In some embodiments of the present invention, the mass ratio of the doped metal oxide to the titanium-based material is (17-32):(68-83).

[0009] In some embodiments of the present invention, the titanium-based material is selected from at least one of TiO2, Ti, TiN, and TiC.

[0010] In some embodiments of the present invention, the titanium-based material has a particle size of 1-5 μm and a purity of ≥99.99%.

[0011] In some embodiments of the present invention, the particle size of the doped metal oxide is 1-5 μm and the purity is ≥99.99%.

[0012] In some embodiments of the present invention, the elements in the titanium-based thin film, by mass fraction, include: Ti 18-48%, O 0.1-68%, Ta 0-6%, and Nb 0-6%.

[0013] In some embodiments of the present invention, the elements in the titanium-based thin film, by mass fraction, include: Ti 31-48%, O 38-53%, Ta 0-3%, and Nb 0-3%.

[0014] In some embodiments of the present invention, the elements in the titanium-based thin film, by mass fraction, include: Ti 31-48%, O 38-53%, Ta 0-2.5%, and Nb 0-2.5%.

[0015] In some embodiments of the present invention, the titanium-based thin film further includes at least one of N, C, and Al.

[0016] In some embodiments of the present invention, the mass fraction of N in the titanium-based thin film is 0-49%.

[0017] In some embodiments of the present invention, the titanium-based thin film does not contain nitrogen.

[0018] In some embodiments of the present invention, the mass fraction of C in the titanium-based thin film is 10-16%.

[0019] In some embodiments of the present invention, the mass fraction of C in the titanium-based thin film is 12-15%.

[0020] In some embodiments of the present invention, the mass fraction of Al in the titanium-based thin film is 5-25%.

[0021] In some embodiments of the present invention, the mass fraction of Al in the titanium-based thin film is 20-25%.

[0022] In some embodiments of the present invention, the raw materials for preparing the titanium-based target material further include an aluminum source, wherein the aluminum source is selected from Al2O3 and / or AlN, and the mass ratio of the aluminum source to the titanium-based material is (11-32):(68-89).

[0023] A second aspect of the present invention provides a method for preparing the above-mentioned titanium-based thin film, comprising the following steps: A titanium-based target is placed in a vacuum coating chamber, and then a protective gas and a reactive gas are successively introduced into the vacuum coating chamber. The titanium-based target is then coated with a titanium-based thin film by reactive plasma deposition using a preheated electron gun.

[0024] In some embodiments of the present invention, the preparation process of the titanium-based target material includes the following steps: (1) Take the raw materials for preparing the titanium-based target material, perform wet ball milling and spray granulation to obtain a mixed powder; (2) The mixed powder is pressed into shape to obtain a target blank; (3) After dehydrating and degreasing the target blank, it is sintered to obtain the titanium-based target.

[0025] In some embodiments of the present invention, in step (1), the particle size of the mixed powder is such that it passes through a 100-200 mesh sieve and the particle size is ≤150μm.

[0026] In some embodiments of the present invention, in step (2), the pressing pressure is 50-200 MPa and the pressing time is 5-30 minutes.

[0027] In some embodiments of the present invention, in step (3), the temperature for dehydration and degreasing is 150-450°C, the time is 4-6 hours, and the heating rate is 0.5-1°C / min.

[0028] In some embodiments of the present invention, in step (3), the sintering temperature is 950-1400℃, the sintering time is 3-8 hours, and the heating rate is 2-10℃ / min.

[0029] In some embodiments of the present invention, the sintering atmosphere is an inert atmosphere.

[0030] In some embodiments of the present invention, the pressure in the vacuum coating chamber is (5-9) × 10⁻⁶. -4 Pa.

[0031] In some embodiments of the present invention, the protective gas is an inert gas. The protective gas is introduced into the gas path of the vacuum coating chamber and the electron gun gas path, respectively for purging and waiting for ionization.

[0032] In some embodiments of the present invention, the inert gas is argon, nitrogen, or a mixture of methane and nitrogen, wherein the volume ratio of methane to nitrogen is 1:99.

[0033] In some embodiments of the present invention, the flow rate of inert gas in the gas path of the vacuum coating chamber is 10-600 sccm, and the purging time is 5-30 min; the flow rate of inert gas in the electron gun gas path is 20-50 sccm.

[0034] In some embodiments of the present invention, the ionization current of the electron gun is 110-140A.

[0035] Research has shown that the composition of the titanium-based thin film of this invention can also be controlled by the ionization current of the electron gun during the deposition process. Specifically, when the amount of metal oxide doped in the titanium-based target is the same, increasing the ionization current of the electron gun will increase the content of the doped metal element in the thin film. Therefore, the composition of the titanium-based thin film of this invention can be controlled by both the titanium-based target and the deposition process.

[0036] In some embodiments of the present invention, the preheating current of the electron gun is 10-35A.

[0037] In some embodiments of the present invention, the titanium-based target is placed on a target ingot base, and the target-topping speed of the target ingot base is 0.01-1 mm / min.

[0038] In some embodiments of the present invention, the reaction gas is selected from at least one gas selected from oxygen, nitrogen, hydrogen sulfide, hydrogen, methane, acetylene and argon.

[0039] In some embodiments of the present invention, the flow rate of argon in the reaction gas is 30-400 sccm, and the flow rate of other reaction gases is 0-350 sccm.

[0040] In some embodiments of the present invention, the flow rate ratio of at least one of oxygen and nitrogen to argon in the reaction gas is (2-43):(57-98).

[0041] In some embodiments of the present invention, the flow rate ratio of at least one of hydrogen sulfide, hydrogen, methane, and acetylene to the inert gas in the reaction gas is (0.01-2):(98-99.99).

[0042] In some embodiments of the present invention, the titanium-based thin film is deposited on a substrate, and the substrate enters the vacuum coating chamber at a speed of 10-200 mm / s.

[0043] In some embodiments of the present invention, the thickness of the titanium-based thin film is 6-4000 nm.

[0044] In some embodiments of the present invention, the titanium-based thin film contains TiO2. x TiN y TiC z At least one of TiCN and TiAlN, wherein the values ​​of x, y, and z are determined by the valence state of the Ti element in the corresponding compound, wherein TiO x TiN y TiC z The presence of multiple valence states in Ti ensures the excellent electrical properties of titanium-based thin films.

[0045] A third aspect of the present invention provides a functional coating comprising the above-described titanium-based thin film.

[0046] In some embodiments of the present invention, the functional coating includes a corrosion-resistant layer, a wear-resistant layer, or a surface protective coating.

[0047] A fourth aspect of the present invention provides a photocatalytic device comprising the above-described titanium-based thin film.

[0048] In some embodiments of the present invention, the titanium-based thin film serves as the photocatalytic active layer of a photocatalytic device for the degradation of organic pollutants, antibacterial treatment, or photocatalytic reactions.

[0049] A fifth aspect of the present invention provides an optoelectronic device comprising the above-described titanium-based thin film.

[0050] In some embodiments of the present invention, the titanium-based thin film serves as a conductive layer, buffer layer, or interface control layer for optoelectronic devices.

[0051] In some embodiments of the present invention, the optoelectronic device is a solar cell device, and the titanium-based thin film serves as the TCO layer, anti-reflection layer, anti-reflection layer, or optical control layer of the solar cell device.

[0052] Compared with the prior art, the above-described technical solution of the present invention has at least the following technical effects or advantages: (1) This invention introduces doped metal oxides such as Ta2O5 and / or Nb2O5, whose melting points are slightly higher than Ti, into the titanium-based target material, enabling synergistic sublimation and stable evaporation of the target material during reactive physical deposition, thereby obtaining a titanium-based target material with anti-melting properties. At the same time, the proportion of doped metal oxides such as Ta2O5 and Nb2O5 in the titanium-based target material is quantitatively designed to quantitatively control the composition of the titanium-based thin film, ensuring that the target material does not melt and that the normal deposition of the thin film is not hindered.

[0053] (2) The titanium-based thin film of the present invention, without significantly affecting the titanium-dominant deposition, introduces a small amount of Ta and / or Nb elements, thereby achieving the compositional controllable deposition of the thin film with Ti and O as the main elements and Ta and / or Nb as auxiliary elements, thus achieving the research and development objective of precisely controlling the composition of the thin film through the reverse control of the target material composition, thereby improving the electrical performance of the titanium-based thin film. Attached Figure Description

[0054] Figure 1 XPS spectrum of Ti element in the titanium-based thin film prepared in Example 1; Figure 2 The image shows the XPS spectrum of Ta in the titanium-based thin film prepared in Example 1. Detailed Implementation

[0055] The present invention will now be described in detail with reference to embodiments to facilitate understanding of the invention by those skilled in the art. It is particularly important to note that the embodiments are merely illustrative of the invention and should not be construed as limiting the scope of protection of the invention. Non-essential improvements and adjustments made to the invention by those skilled in the art based on the above description should still fall within the scope of protection of the invention. Furthermore, all raw materials mentioned below, unless otherwise specified, are commercially available products; all process steps or preparation methods not mentioned in detail are process steps or preparation methods known to those skilled in the art.

[0056] Example 1 A method for preparing a titanium-based thin film includes the following steps: (1) Preparation of titanium-based target material: Take Ta2O5 powder and Ti powder (mass ratio 27:73) with a particle size of 1μm and a purity ≥99.99%, mix them and pour them into deionized water. After ball milling at 300r / min for 12 hours, dry them and pass them through an 80-mesh sieve to obtain a mixed powder with a particle size ≤200μm. Then, use a spray granulator to granulate the mixed powder. The process parameters of the spray granulator are: rotation speed 5000r / min, inlet air temperature 180℃, outlet air temperature 80℃. The mixed powder is obtained by sieving through a 100-mesh sieve. The target material is placed in a cylindrical mold with a diameter of 30 mm and pressed into shape using a hydraulic press at a pressure of 100 MPa for 15 minutes to obtain a cylindrical target blank with a diameter of 30 mm. The obtained target blank is then placed in a high-temperature sintering furnace for dehydration, degreasing, and sintering. Pure argon gas is introduced throughout the process. The temperature is set as follows: the temperature is increased to 400°C at a heating rate of 1°C / min and held for 5 hours to complete dehydration and degreasing. Then, the temperature is increased to 1300°C at a heating rate of 2°C / min and held for 3 hours for atmospheric pressure sintering to obtain the titanium-based target material of this embodiment.

[0057] (2) Using a reactive plasma deposition apparatus, the titanium-based target material obtained in step (1) is placed into the target ingot base, the coating chamber door is closed, and the coating chamber is evacuated to 8×10⁻⁶. -4 Pa. Then, argon gas is introduced into the gas path of the coating chamber for purging. The argon gas flow rate in the chamber gas path is set to 300 sccm, and the purging time is 10 min. The argon gas flow rate in the electron gun gas path is set to 40 sccm, and ionization is waited for. The electron gun current switch is turned on, the current is set to 20A, and ignition and preheating are performed.

[0058] (3) Place the glass substrate into the pre-coating chamber to prepare for entering the coating chamber, and adjust the ionization current of the electron gun to 120A to ionize the argon gas in the electron gun to form Ar. + Ion beam bombardment of the target material; the top target velocity of the target ingot base top target system is set to 0.15 mm / min; the entire gas path of the chamber is purged with argon-oxygen mixture, wherein the argon gas flow rate is 62 sccm and the oxygen gas flow rate is 18 sccm; after the electron gun, top target system and coating chamber gas path are set to work stably, the glass substrate enters the coating chamber feed plate at a speed of 100 mm / s, and the distance between the titanium-based target and the substrate is set to 511 mm.

[0059] (4) After the coating is completed, adjust the electron gun current to standby mode, set the current to 15A, and remove the substrate from the coating chamber. Then, put in a new batch of substrates and repeat steps (2) and (3), or turn off the coating equipment. The titanium-based thin film of this embodiment is obtained from the removed glass substrate.

[0060] Example 2 The difference between Example 2 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material composition of the titanium-based target in Example 2 includes Ta2O5 powder and Ti powder in a mass ratio of 32:68.

[0061] Example 3 The difference between Example 3 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material composition of the titanium-based target in Example 3 includes Nb2O5 powder and Ti powder in a mass ratio of 18:82.

[0062] Example 4 The difference between Example 4 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material components of the titanium-based target in Example 4 include Nb2O5 powder and TiO2 powder in a mass ratio of 25:75.

[0063] Example 5 The difference between Example 5 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material components of the titanium-based target in Example 5 include Nb2O5 powder and TiO2 powder in a mass ratio of 31:69.

[0064] Example 6 The difference between Example 6 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material components of the titanium-based target in Example 6 include Ta2O5 powder and TiO2 powder in a mass ratio of 17:83.

[0065] Example 7 The difference between Example 7 and Example 1 is that the ionization current of the electron gun in step (3) is different. The ionization current of Example 7 is 110A.

[0066] Example 8 The difference between Example 8 and Example 1 is that the ionization current of the electron gun in step (3) is different. The ionization current of Example 8 is 140A.

[0067] Example 9 The difference between Example 9 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material composition of the titanium-based target in Example 9 includes Nb2O5 powder and TiO2 powder in a mass ratio of 16:84.

[0068] Example 10 The difference between Example 10 and Example 1 is that the raw materials for preparing the titanium-based target are different. The raw material components of the titanium-based target in Example 10 include Ta2O5 powder and TiO2 powder in a mass ratio of 45:55.

[0069] Example 11 The difference between Example 11 and Example 1 is that the raw materials and protective gas used to prepare the titanium-based target are different. The raw material components of the titanium-based target in Example 11 include Nb2O5 powder and TiN powder in a mass ratio of 30:70, and the protective gas argon is replaced with nitrogen.

[0070] Example 12 The difference between Example 12 and Example 1 is that the raw materials for preparing the titanium-based target are different. The raw material components of the titanium-based target in Example 12 include Nb2O5 powder and TiC powder in a mass ratio of 26:74.

[0071] Example 13 The difference between Example 13 and Example 1 is that the raw materials and protective gas used to prepare the titanium-based target are different. The raw material components of the titanium-based target in Example 13 include Ta2O5 powder and Ti powder in a mass ratio of 32:68, and the protective gas argon is replaced with methane and nitrogen in a volume ratio of 1:99.

[0072] Example 14 The difference between Example 14 and Example 1 is that the raw materials and protective gas used to prepare the titanium-based target are different. The raw material components of the titanium-based target in Example 14 include Ta2O5 powder, AlN and Ti powder in a mass ratio of 28:12:60, and the protective gas argon is replaced with nitrogen.

[0073] Comparative Example 1 The difference between Comparative Example 1 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material composition of the titanium-based target in Comparative Example 1 is 100% Ti powder.

[0074] Comparative Example 2 The difference between Comparative Example 2 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material composition of the titanium-based target in Comparative Example 2 is 100% TiO2 powder.

[0075] Comparative Example 3 The difference between Comparative Example 3 and Example 1 lies in the different raw materials used to prepare the titanium-based target. The raw material components of the titanium-based target in Comparative Example 3 include Nb2O5 powder and Ti powder in a mass ratio of 10:90.

[0076] Comparative Example 4 The difference between Comparative Example 4 and Example 1 lies in the different raw materials used to prepare the titanium-based target. The raw material components of the titanium-based target in Comparative Example 4 include Nb2O5 powder and Ti powder in a mass ratio of 57:43.

[0077] Comparative Example 5 The difference between Comparative Example 5 and Example 1 lies in the raw materials used to prepare the titanium-based target. The raw material components of the titanium-based target in Comparative Example 5 include Nb2O5 powder and TiO2 powder in a mass ratio of 8:92.

[0078] Comparative Example 6 The difference between Comparative Example 6 and Example 1 lies in the different raw materials used to prepare the titanium-based target. The raw material components of the titanium-based target in Comparative Example 6 include Ta2O5 powder and TiO2 powder in a mass ratio of 65:35.

[0079] Comparative Example 7 The difference between Comparative Example 7 and Example 1 is that the coating current is different; the current used in Comparative Example 7 is 90A.

[0080] Comparative Example 8 The difference between Comparative Example 8 and Example 1 is that the coating current is different; the current used in Comparative Example 8 is 100A.

[0081] Comparative Example 9 The difference between Comparative Example 9 and Example 1 is that the coating current is different; the current used in Comparative Example 9 is 160A.

[0082] Comparative Example 10 The difference between Comparative Example 10 and Example 1 is the coating current; the current used in Comparative Example 10 is 175A.

[0083] Performance testing The coating conditions of the titanium-based thin films prepared in Examples 1-14 and Comparative Examples 1-6, as well as the carrier concentration and sheet resistance of the films, are shown in Table 1, where "∞" represents infinite sheet resistance, indicating that the substrate failed to be coated or the film is non-conductive. The elemental composition of each titanium-based thin film was tested using XPS, as shown in Table 2.

[0084] Table 1:

[0085] Table 2:

[0086] As shown in Tables 1-2, the elemental composition of the thin films in Examples 1-14 changes with the raw material composition of the target material, and the trends are the same. This indicates that the composition of the thin film can be changed by controlling the ratio of the target material. Simultaneously, the ionization current of the electron gun also has a certain regulatory effect on the elemental composition of the thin film. Compared with Comparative Examples 1-3, the target material composition has a specific range because the conditions in the deposition chamber are relatively harsh. If insufficient amounts of highly thermally stable doped metal oxides such as Ta2O5 and Nb2O5 are added to the target material, it will cause the target material to melt and collapse during the deposition process, and the target material composition cannot effectively enter the substrate to form a thin film. Compared with Comparative Examples 4 and 6, if excessive amounts of highly thermally stable metal oxides such as Ta2O5 or Nb2O5 are added to the target material, it will also lead to the target material being too stable overall. The thermal stability framework effect of highly thermally stable doped metal oxides such as Ta2O5 and Nb2O5 on the target material is obvious, hindering the ionization and sublimation of the target material, which will also lead to the target material not being effectively deposited on the substrate to form a thin film. Compared to Comparative Examples 7-9, excessively high or low ionization current of the electron gun can also prevent the target material from successfully forming a film on the substrate. This demonstrates that the present invention achieves quantitative control of the "target-film" composition within a certain range while ensuring normal ionization and sublimation of the target material.

[0087] Table 2 evaluates the quality of the thin film by its Ti content. A higher Ti content indicates a more successful film deposition and better electrical properties. Regarding carbon (C), besides being introduced as a source during TiCN film deposition, C is also introduced as a comparison element during XPS testing. Therefore, all films will contain C in the XPS test results.

[0088] Figure 1 The image shows the XPS spectrum of Ti in the titanium-based thin film prepared in Example 1. The horizontal axis represents the electron binding energy, and the vertical axis represents the photoelectron signal intensity. Figure 1 It can be seen that the thin film contains multiple valence states of titanium, including subtitanium (Ti). 3+ Ti 2+ ) and metallic titanium (Ti 0 These factors all ensure that the thin film possesses excellent electrical properties.

[0089] Figure 2 The image shows the XPS spectrum of Ta in the titanium-based thin film prepared in Example 1, which confirms that the film composition contains Ta, indicating that Ta2O5 and Ti are co-sublimated and deposited on the substrate.

[0090] For those skilled in the art, several simple deductions or substitutions can be made without departing from the inventive concept, without requiring creative effort. Therefore, any simple improvements made to this invention by those skilled in the art based on the disclosure of this invention should be within the scope of protection of this invention. The above embodiments are preferred embodiments of this invention, and all processes similar to this invention and equivalent changes should fall within the scope of protection of this invention.

Claims

1. A titanium-based thin film, characterized in that, The titanium-based thin film is deposited by a titanium-based target. The raw materials for preparing the titanium-based target include titanium-based materials and doped metal oxides. The doped metal oxides are selected from tantalum oxide and / or niobium oxide. The mass ratio of the doped metal oxides to the titanium-based materials is (12-47):(53-88).

2. The titanium-based thin film according to claim 1, characterized in that, The titanium-based material is selected from at least one of TiO2, Ti, TiN, and TiC.

3. The titanium-based thin film according to claim 1 or 2, characterized in that, The elements in the titanium-based thin film, by mass fraction, include: Ti 18-48%, O 0.1-68%, Ta 0-6%, and Nb 0-6%.

4. The titanium-based thin film according to claim 3, characterized in that, The titanium-based thin film also includes at least one of N, C, and Al.

5. The titanium-based thin film according to claim 1, characterized in that, The raw materials for preparing the titanium-based target material also include an aluminum source, which is selected from Al2O3 and / or AlN, and the mass ratio of the aluminum source to the titanium-based material is (11-32):(68-89).

6. A method for preparing a titanium-based thin film as described in any one of claims 1-5, characterized in that, Includes the following steps: A titanium-based target is placed in a vacuum coating chamber, and then a protective gas and a reactive gas are successively introduced into the vacuum coating chamber. The titanium-based target is then coated with a titanium-based thin film by reactive plasma deposition using a preheated electron gun.

7. The method for preparing titanium-based thin films according to claim 6, characterized in that, The ionization current of the electron gun is 50-200A; And / or, the protective gas is an inert gas; And / or, the reactant gas is selected from at least one of oxygen, nitrogen, hydrogen sulfide, hydrogen, methane, acetylene and argon.

8. A functional coating, characterized in that, Includes the titanium-based thin film according to any one of claims 1-5.

9. A photocatalytic device, characterized in that, Includes the titanium-based thin film according to any one of claims 1-5.

10. An optoelectronic device, characterized in that, Includes the titanium-based thin film according to any one of claims 1-5.

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