Sensor calibration method, apparatus, storage medium, computer program product, and sensor

Abstract

The application provides a sensor calibration method and device, a storage medium, a computer program product and a sensor. The sensor calibration method comprises the following steps: obtaining a first ambient temperature of the sensor before starting a micro-electro-mechanical system; starting the micro-electro-mechanical system, wherein the micro-electro-mechanical system is used for detection; obtaining a second ambient temperature of the sensor after the micro-electro-mechanical system outputs detection data; and calibrating the detection data according to the first ambient temperature and the second ambient temperature. The application calibrates the detection data detected by the micro-electro-mechanical system according to the first ambient temperature before the micro-electro-mechanical system in the sensor chip detects data and the second ambient temperature after the micro-electro-mechanical system detects data. The first ambient temperature and the second ambient temperature can be used to more accurately obtain the average temperature or temperature change trend experienced by the sensor during the output of effective data, thereby effectively improving the detection precision of the sensor chip.

Description

Technical Field

[0001] This invention relates to the field of sensor technology, and in particular to a sensor calibration method, apparatus, storage medium, computer program product, and sensor. Background Technology

[0002] Sensor chips are typically used for data detection, such as electrical parameters and environmental data. In actual testing, sensor chips are susceptible to temperature fluctuations, which can reduce their detection accuracy, especially for sensors with resistive structures.

[0003] In existing technologies, a common approach is to first detect problems in the environment surrounding the sensor chip before using it for detection, and then compensate for the data collected by the sensor chip using ambient temperature. However, during actual operation, the sensor chip generates heat, causing temperature changes in its surrounding environment. Therefore, using ambient temperature to calibrate the sensor's data in this case results in inaccurate data.

[0004] The above content is only used to help understand the technical solution of the present invention and does not represent an admission that the above content is prior art. Summary of the Invention

[0005] The main objective of this invention is to provide a sensor calibration method, apparatus, storage medium, computer program product, and sensor, aiming to solve the technical problem of low sensor detection accuracy in the prior art.

[0006] To achieve the above objectives, the present invention proposes a sensor calibration method, which is applied to a sensor, the sensor including a microelectromechanical system and a readout integrated circuit; Sensor calibration methods include: Obtain the first ambient temperature of the sensor before the microelectromechanical system starts up; The microelectromechanical system (MEMS) is activated; the MEMS is used for detection. The second ring of the sensor after acquiring the output detection data of the microelectromechanical system ambient temperature; The detection data is calibrated based on the first ambient temperature and the second ambient temperature.

[0007] Optionally, calibrating the detection data based on the first ambient temperature and the second ambient temperature includes: The average operating temperature of the microelectromechanical system is determined based on the first ambient temperature and the second ambient temperature. The detection data is calibrated based on the average operating temperature.

[0008] Optionally, determining the average operating temperature of the microelectromechanical system based on the first ambient temperature and the second ambient temperature includes: The heat dissipation coefficient of the sensor and the operating time of the microelectromechanical system are obtained; The temperature rise coefficient of the sensor is determined based on the first ambient temperature, the working time, the second ambient temperature, and the heat dissipation coefficient. The average operating temperature of the sensor is determined based on the heating coefficient, the first ambient temperature, and the heat dissipation coefficient.

[0009] Optionally, determining the temperature rise coefficient of the sensor based on the first ambient temperature, the operating time, the second ambient temperature, and the heat dissipation coefficient includes: The temperature rise formula of the sensor is fitted based on the first ambient temperature, the working time, the second ambient temperature, and the heat dissipation coefficient. The temperature rise coefficient of the sensor is extracted from the temperature rise formula.

[0010] Optionally, calibrating the detection data based on the average operating temperature includes: Obtain the temperature characteristic function of the sensor; The temperature deviation data is determined based on the average operating temperature and the temperature characteristic function; The detection data is calibrated based on the temperature deviation data.

[0011] Furthermore, to achieve the above objectives, the present invention also provides a sensor calibration apparatus, comprising: The temperature detection module is used to obtain the initial ambient temperature of the sensor before the microelectromechanical system starts up. The data acquisition module is used to start the microelectromechanical system to perform detection and obtain detection data; The temperature detection module is used to acquire the second ambient temperature of the sensor after the microelectromechanical system outputs detection data; The data calibration module is used to calibrate the detection data based on the first ambient temperature and the second ambient temperature.

[0012] In addition, to achieve the above objectives, the present invention also provides a storage medium storing a computer program, which, when executed by a sensor, implements the steps of the sensor calibration method as described in any of the preceding claims.

[0013] In addition, to achieve the above objectives, the present invention also provides a computer program product comprising a computer program that, when executed by a sensor, implements the steps of the sensor calibration method as described in any of the preceding claims.

[0014] In addition, to achieve the above objectives, the present invention also provides a sensor, comprising: a microelectromechanical system and a readout integrated circuit; The readout integrated circuit includes: a temperature detection circuit, a gating circuit, an analog-to-digital conversion circuit, and a digital signal processing circuit; The temperature detection circuit is connected to the first input terminal of the gating circuit, and the microelectromechanical system is connected to the second input terminal of the gating circuit. The output terminal of the gating circuit is connected to the input terminal of the analog-to-digital converter circuit, and the control terminal of the gating circuit is connected to the digital signal processing circuit. The output of the analog-to-digital converter circuit is connected to the digital signal processing circuit. The digital signal processing circuit is used to perform the sensor calibration method described in any of the above-mentioned methods.

[0015] Optionally, the temperature detection circuit includes: a current source and a transistor; The output terminal of the current source is connected to the emitter of the transistor and the first input terminal of the gating circuit, and the base and collector of the transistor are grounded.

[0016] This invention provides a sensor calibration method, apparatus, storage medium, computer program product, and sensor. The method includes: acquiring a first ambient temperature of the sensor before the microelectromechanical system (MEMS) is started; starting the MEMS, which is used for detection; acquiring a second ambient temperature of the sensor after the MEMS outputs detection data; and calibrating the detection data based on the first and second ambient temperatures. This invention calibrates the detection data detected by the MEMS within the sensor chip by incorporating the temperature during the data acquisition process into the calibration of the detection data, effectively improving the detection accuracy of the sensor chip. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on the structures shown in these drawings without creative effort.

[0018] Figure 1 This is a curve showing the change of ambient temperature over time during sensor operation. Figure 2 This is a schematic flowchart of the first embodiment of the sensor calibration method proposed in this invention; Figure 3 This is a schematic diagram of the first process of the second embodiment of the sensor calibration method proposed in this invention; Figure 4 This is a schematic diagram of the second process of the second embodiment of the sensor calibration method proposed in this invention; Figure 5 This is a schematic diagram of the sensor calibration device proposed in this invention; Figure 6 This is a schematic diagram of the sensor structure proposed in this invention; Figure 7 This is a circuit diagram of the temperature detection circuit in the sensor proposed in this invention.

[0019] The realization of the objective, functional features and advantages of the present invention will be further explained in conjunction with the embodiments and with reference to the accompanying drawings. Detailed Implementation

[0020] It should be understood that the specific embodiments described herein are for illustrative purposes only and are not intended to limit the scope of the invention.

[0021] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of the present invention, and not all of them. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0022] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present invention are only used to explain the relative positional relationship and movement of each component in a certain specific posture (as shown in the figure). If the specific posture changes, the directional indication will also change accordingly.

[0023] Furthermore, the use of terms such as "first" and "second" in this invention is for descriptive purposes only and should not be construed as indicating or implying their relative importance or implicitly specifying the number of technical features indicated. Therefore, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. Additionally, the technical solutions of the various embodiments can be combined with each other, but only on the basis of being achievable by those skilled in the art. When the combination of technical solutions is contradictory or impossible to implement, such a combination of technical solutions should be considered non-existent and not within the scope of protection claimed by this invention.

[0024] In known technologies, sensors are affected by temperature during detection, therefore temperature is used to calibrate the detection data obtained by the microelectromechanical system (MEMS) within the sensor. A common temperature calibration logic is as follows: after the sensor chip starts up, it first detects the ambient temperature of the MEMS, and then uses this temperature data to calibrate the MEMS's temperature characteristics after subsequent data readout, ultimately outputting temperature-independent data. However, during use, the ambient temperature of the MEMS is affected by the heat generated by the sensor's own power consumption. (Refer to...) Figure 1 , Figure 1 This is a curve showing the change of ambient temperature over time during sensor operation. Figure 1 In practice, the actual operating temperature of a sensor can change. For temperature-sensitive sensor types, such as resistive MEMS, temperature variations can affect their mechanical-electrical properties, leading to a significant decrease in sensor accuracy.

[0025] To address the above problems, this invention proposes a sensor calibration method, referring to... Figure 2 , Figure 2 This is a schematic flowchart of the first embodiment of the sensor calibration method proposed in this invention. Based on Figure 2 The first embodiment of a sensor calibration method is proposed.

[0026] In this embodiment, the sensor calibration method includes: It should be noted that the sensor calibration method is applied to sensors, which consist of two parts: a Micro-Electro-Mechanical System (MEMS) and a Readout Circuit (Readout IC). MEMS refers to the miniature mechanical structure within a sensor responsible for sensing physical quantities (such as acceleration, angular velocity, pressure, sound, etc.). Examples include a movable mass in an accelerometer or a vibrating diaphragm in a microphone. The operating state of the MEMS (such as displacement or capacitance changes) changes with the measured physical quantity. The MEMS converts the physical signals detected by the sensor, such as pressure or magnetic fields, into electrical signals. The Readout IC is a dedicated chip that works with the MEMS, providing drive for the MEMS, converting the MEMS's mechanical response into electrical signals, and amplifying, filtering, and digitizing these signals to ultimately output detection data usable by subsequent circuits—in other words, processing the electrical signals into recognizable digital or analog signals.

[0027] Step S10: Obtain the first ambient temperature of the sensor before the microelectromechanical system is started.

[0028] It should be understood that a readout integrated circuit or a digital signal processing circuit within a readout integrated circuit can be used as the execution subject. In this embodiment or the following embodiments, a digital signal processing circuit can be used as an example for illustration.

[0029] It should be noted that the first ambient temperature refers to the temperature value of the environment inside or around the sensor chip measured moment before the microelectromechanical system (MEMS) starts up. The first ambient temperature is used to characterize the ambient temperature of the MEMS moment before startup.

[0030] In practical implementation, before the microelectromechanical system is started, a temperature detection component set in a certain area near the sensor or set inside the sensor can be used to detect the first ambient temperature in the environment where the sensor is located. Then, the first temperature signal is transmitted to the digital signal processing circuit through signal transmission to complete the acquisition of the first ambient temperature.

[0031] Step S20: Start the microelectromechanical system (MEMS), which is used for detection.

[0032] It should be noted that activating the microelectromechanical system (MEMS) signifies that the control system has entered a normal operating state, capable of sensitively responding to external changes. After activation, the MEMS can acquire physical quantities from the object being monitored, obtaining detection data. For example, when detecting the output voltage of a power supply, the MEMS can connect to the power supply's output terminal to detect the voltage and obtain output voltage data. This detection data is a raw digital or analog signal characterizing the magnitude of the physical quantity sensed by the MEMS, processed and output by a readout integrated circuit. The detection data has not yet been calibrated for temperature drift.

[0033] In practice, a bias voltage or other electrical signal can be applied to the microelectromechanical system (MEMS). The MEMS can start when it receives the electrical signal, then perform data detection, obtain the detection data, and then output the detection data.

[0034] Step S30: Obtain the second ambient temperature of the sensor after the output detection data of the microelectromechanical system.

[0035] It should be understood that the process of a microelectromechanical system (MEMS) acquiring detection data typically lasts for a certain period of time, during which the primary ambient temperature of the MEMS changes. The secondary ambient temperature refers to the temperature value inside or around the sensor chip measured at the instant the MEMS outputs detection data.

[0036] In practical implementation, at the moment the micro-motor system outputs detection data, the first ambient temperature in the environment where the sensor is located can be detected by a temperature detection component set in a certain area near the sensor or set inside the sensor. Then, the second temperature signal is transmitted to the digital signal processing circuit through signal transmission to complete the acquisition of the second ambient temperature.

[0037] Step S40: Calibrate the detection data based on the first ambient temperature and the second ambient temperature.

[0038] It should be noted that the calibration process refers to calibrating and correcting the detection data output by the micro-motor system based on the temperature information reflected by the first and second ambient temperatures, in order to eliminate or reduce the measurement error caused by the temperature influence on the sensor's own characteristics, thereby outputting more accurate physical quantity values.

[0039] The first ambient temperature and the second ambient temperature represent the temperature changes experienced by the micro-motor system during the completion of a measurement task.

[0040] In practical implementation, given the first ambient temperature, the second ambient temperature, and the detection data, the temperature of the microelectromechanical system during the data acquisition process can be calculated based on the first and second ambient temperatures, such as the average temperature and the characteristic temperature. Then, the temperature difference between the ambient temperature and the rated temperature of the microelectromechanical system determines the error of the detection data. Finally, the error of the detection data is used to calibrate the detection data, thereby obtaining accurate detection data.

[0041] In this embodiment, the first ambient temperature of the sensor before the microelectromechanical system (MEMS) is started is obtained; the MEMS is started for detection; the second ambient temperature of the sensor after the MEMS outputs detection data is obtained; and the detection data is calibrated based on the first and second ambient temperatures. This invention calibrates the detection data detected by the MEMS using the first and second ambient temperatures before and after data detection within the sensor chip. Utilizing these first and second ambient temperatures, the average temperature or temperature change trend experienced by the sensor during the output of valid data can be more accurately determined, effectively improving the detection accuracy of the sensor chip.

[0042] Based on the first embodiment of the sensor calibration method described above, a second embodiment of the sensor calibration method of the present invention is proposed. (Refer to...) Figure 3 , Figure 3 This is a schematic diagram of the first process of the second embodiment of the sensor calibration method proposed in this invention.

[0043] In this embodiment, step S40 includes: Step S41: Determine the average operating temperature of the microelectromechanical system based on the first ambient temperature and the second ambient temperature.

[0044] It should be noted that the average operating temperature refers to the equivalent average temperature of the location of the microelectromechanical system (MEMS) throughout the entire operating period from startup to the output of detection data. The average operating temperature reflects the representative temperature value that represents the overall impact of temperature on sensor performance throughout the entire operating process. Because the sensor generates its own heat during operation, the temperature gradually rises from the first ambient temperature; therefore, the average operating temperature is usually higher than the first ambient temperature but lower than the second ambient temperature.

[0045] In practical implementation, the average operating temperature of the microelectromechanical system (MEMS) can be obtained directly from the first ambient temperature and the second ambient temperature through calculation, for example, by using the formula Tavg = (T1 + T2) / 2, where Tavg is the average operating temperature of the MEMS, T1 is the first ambient temperature, and T2 is the second ambient temperature. Alternatively, the first ambient temperature and the second ambient temperature can be input into the average temperature calculation model, and the average operating temperature of the MEMS during the detection process can be evaluated and output through the average temperature calculation model.

[0046] Step S42: Calibrate the detection data based on the average operating temperature.

[0047] It should be understood that, given the average temperature of the microelectromechanical system (MEMS) during the testing process, the average operating temperature can be directly used to calibrate the test data. In the specific calibration process, the temperature difference can be obtained by first subtracting the average operating temperature from the rated operating temperature of the MEMS. Then, based on the temperature difference and a pre-defined mapping relationship between the temperature difference and the data deviation, the data deviation of the test data can be determined. Finally, this data deviation can be used to calibrate the test data.

[0048] The mapping relationship can reflect the correspondence between temperature difference and data deviation. For example, when the temperature difference is 0, the data deviation value is 0.

[0049] In this embodiment, by calculating the average operating temperature, the dynamic temperature process is simplified into a static compensation point, which greatly reduces the calibration complexity. The temperature effect that changes over time is equivalently transformed into the effect at a fixed temperature. The average operating temperature can better represent the temperature during the entire effective integration period of the signal, so that the compensation amount is closer to the actual needs. This effectively reduces the compensation error introduced by using a single, lagging temperature point and improves the measurement accuracy.

[0050] Specifically, step S41 includes: Step S411: Obtain the heat dissipation coefficient of the sensor and the operating time of the microelectromechanical system.

[0051] It's important to note that the heat dissipation coefficient (HDC) is a physical parameter representing the ability of a sensor or its enclosure to dissipate heat to its surroundings. The HDC reflects the amount of heat the sensor can dissipate per unit time for every degree Celsius increase in temperature. The HDC is related to the chip's packaging material, size, and mounting method. A higher HDC results in easier cooling and slower temperature rise for the sensor, leading to a relatively lower ambient temperature for the microelectromechanical system (MEMS). Conversely, a lower HDC results in faster temperature rise and slower cooling for the sensor, leading to a relatively higher ambient temperature for the MEMS. The HDC is typically primarily influenced by the packaging material, size, and mounting method. Considering that the sensor's packaging material and size are fixed during the sensor design and packaging stages, the HDC can be obtained through simulation or direct measurement and then stored.

[0052] It should be noted that the operating time refers to the time elapsed from the start of the microelectromechanical system (MEMS) to the output of valid detection data. Operating time is typically a short detection duration on the order of microseconds to milliseconds. The operating time is determined by the sensor's operating mode (such as sampling rate and bandwidth) and the timing of its internal circuitry. If the sensor remains unchanged, the operating time can be directly measured using methods such as timing.

[0053] Step S412: Determine the temperature rise coefficient of the sensor based on the first ambient temperature, the working time, the second ambient temperature, and the heat dissipation coefficient.

[0054] It's important to note that the temperature rise coefficient is a key parameter that reflects the sensor's temperature rise behavior during its operating period. The temperature rise coefficient is not a fixed physical constant, but rather a dynamic variable related to the heat dissipation coefficient and operating time. For example, the temperature rise coefficient is directly proportional to the sensor's power; the higher the sensor's power, the larger the corresponding temperature rise coefficient. A larger temperature rise coefficient indicates that the sensor's own heat generation is more efficient in causing temperature rise within a given operating time. The temperature rise coefficient value ranges from 0 to 1 and is used to interpolate the temperature at an intermediate time point between the first and second ambient temperatures.

[0055] It should be understood that the first and second ambient temperatures reflect the temperature changes within the environment in which the microelectromechanical system (MEMS) operates during the data collection process, while the operating time reflects the duration of sensor heating during this process, and the heat dissipation coefficient reflects the sensor's heat dissipation during data collection. Given that the first and second ambient temperatures, operating time, and heat dissipation coefficient are all determined, the temperature changes within the environment in which the MEMS operates can be derived, thus determining the sensor's temperature rise coefficient.

[0056] Step S413: Determine the average operating temperature of the sensor based on the heating coefficient, the first ambient temperature, and the heat dissipation coefficient.

[0057] In practical implementation, given a fixed heating coefficient and a fixed heat dissipation coefficient, the temperature change within the environment of the microelectromechanical system (MEMS) per unit time can be determined based on these coefficients. Then, combined with the initial ambient temperature, the ambient temperature at each moment during the data collection process can be derived. Furthermore, the average operating temperature of the environment during the data collection process can be calculated based on the ambient temperature at each moment. Alternatively, after determining the temperature change, the ambient temperature at each moment during the data collection process can be derived by combining the second ambient temperature with the temperature change data. This allows for the calculation of the average operating temperature of the environment during the data collection process.

[0058] In practical implementation, the average operating temperature calculation formula can also be used directly: The average operating temperature is calculated. The average operating temperature, For working hours, The coefficient of temperature rise, For heat dissipation coefficient, The first ambient temperature.

[0059] Step S412 specifically includes: Step S4121: Obtain the temperature rise formula for the sensor.

[0060] It should be noted that the temperature rise formula represents the temperature change of the microelectromechanical system (MEMS) within its environment during the data detection period. This temperature rise formula can be based on pre-defined thermodynamic characteristics of the sensor.

[0061] Step S4122: Obtain the temperature rise coefficient of the sensor based on the first ambient temperature, the working time, the second ambient temperature, the heat dissipation coefficient, and the temperature rise formula of the sensor.

[0062] It should be understood that, given a fixed first ambient temperature, operating time, second ambient temperature, and heat dissipation coefficient, the temperature rise condition of the microelectromechanical system (MEMS) within its environment can be fitted using the aforementioned parameters to obtain the sensor's temperature rise formula. The temperature rise formula obtained by fitting the first ambient temperature, operating time, second ambient temperature, and heat dissipation coefficient is as follows: ,in, The coefficient of temperature rise, For heat dissipation coefficient, The second ambient temperature, The first ambient temperature, The operating time is used as a reference. Given that the first ambient temperature, the second ambient temperature, the operating time, and the heat dissipation coefficient are all known quantities, the temperature rise coefficient can be directly read or calculated from these values; that is, the temperature rise coefficient of the sensor can be directly obtained through extraction.

[0063] Reference Figure 4 , Figure 4 This is a schematic diagram of the second process of the second embodiment of the sensor calibration method proposed in this invention.

[0064] In this embodiment, step S42 includes: Step S421: Obtain the temperature characteristic function of the sensor; It should be noted that the temperature characteristic function is a function that presents the deviation between the detected quantity and the actual temperature caused by the temperature effect on the microelectromechanical system (MEMS). The temperature characteristic function accurately describes the systematic deviation of the sensor's output signal relative to the true physical quantity at different temperatures. The temperature characteristic function typically contains two core components: a zero-point drift function and a sensitivity drift function. The temperature characteristic function can be pre-calibrated experimentally and stored internally within the sensor. In practical implementation, the sensor's temperature characteristic function can be directly obtained through extraction or reception.

[0065] Step S422: Determine the temperature deviation data based on the average operating temperature and the temperature characteristic function.

[0066] It should be noted that temperature deviation data refers to the discrepancy between the data detected during the actual detection process and the data actually presented by the object, caused by temperature effects. In other words, it represents the deviation that requires calibration of the detection data. Temperature deviation data reflects the inherent systematic error in the sensor output at the current temperature that needs to be eliminated.

[0067] In practice, the temperature deviation of the sensor during operation can be determined based on the average operating temperature and the sensor's rated operating temperature. Then, this temperature deviation can be substituted into the temperature characteristic function to determine the temperature deviation data caused by the temperature effect in the detection data.

[0068] Step S423: Calibrate the detection data based on the temperature deviation data.

[0069] In practice, temperature deviation data can be superimposed with detection data to calibrate the detection data. For example, in the voltage detection process, if the detected voltage value is 3.0V and the temperature deviation data is 0.3V, the calibration process is to superimpose the 3.0V voltage value with the 0.3V voltage value to obtain the accurate 3.3V voltage value.

[0070] Furthermore, to achieve the above objectives, the present invention also provides a sensor calibration device, referring to... Figure 5 , Figure 5 This is a schematic diagram of the sensor calibration device proposed in this invention.

[0071] In this embodiment, the sensor calibration device includes: Temperature detection module 10 is used to acquire the first ambient temperature of the sensor before the microelectromechanical system is started. It should be noted that the first ambient temperature refers to the temperature value of the environment inside or around the sensor chip measured moment before the microelectromechanical system (MEMS) starts up. The first ambient temperature is used to characterize the ambient temperature of the MEMS moment before startup.

[0072] In practical implementation, before the microelectromechanical system is started, a temperature detection component set in a certain area near the sensor or set inside the sensor can be used to detect the first ambient temperature in the environment where the sensor is located. Then, the first temperature signal is transmitted to the digital signal processing circuit through signal transmission to complete the acquisition of the first ambient temperature.

[0073] Data acquisition module 20 is used to start the microelectromechanical system to perform detection and obtain detection data; It should be noted that activating the microelectromechanical system (MEMS) signifies that the control system has entered a normal operating state, capable of sensitively responding to external changes. After activation, the MEMS can acquire physical quantities from the object being monitored, obtaining detection data. For example, when detecting the output voltage of a power supply, the MEMS can connect to the power supply's output terminal to detect the voltage and obtain output voltage data. This detection data is a raw digital or analog signal characterizing the magnitude of the physical quantity sensed by the MEMS, processed and output by a readout integrated circuit. The detection data has not yet been calibrated for temperature drift.

[0074] In practice, a bias voltage or other electrical signal can be applied to the microelectromechanical system (MEMS). The MEMS can start when it receives the electrical signal, then perform data detection, obtain the detection data, and then output the detection data.

[0075] Temperature detection module 10 is used to acquire the second ambient temperature of the sensor after the microelectromechanical system outputs detection data; It should be understood that the process of a microelectromechanical system (MEMS) acquiring detection data typically lasts for a certain period of time, during which the initial ambient temperature of the MEMS may change. The second ambient temperature refers to the temperature value inside or around the sensor chip measured at the instant the MEMS outputs detection data.

[0076] In practical implementation, at the moment the micro-motor system outputs detection data, the first ambient temperature in the environment where the sensor is located can be detected by a temperature detection component set in a certain area near the sensor or set inside the sensor. Then, the second temperature signal is transmitted to the digital signal processing circuit through signal transmission to complete the acquisition of the second ambient temperature.

[0077] The data calibration module 30 is used to calibrate the detection data based on the first ambient temperature and the second ambient temperature.

[0078] It should be noted that the calibration process refers to calibrating and correcting the detection data output by the micro-motor system based on the temperature information reflected by the first and second ambient temperatures, in order to eliminate or reduce the measurement error caused by the temperature influence on the sensor's own characteristics, thereby outputting more accurate physical quantity values.

[0079] The first ambient temperature and the second ambient temperature represent the temperature changes experienced by the micro-motor system during the completion of a measurement task.

[0080] In practical implementation, given the first ambient temperature, the second ambient temperature, and the detection data, the temperature of the microelectromechanical system during the data acquisition process can be calculated based on the first and second ambient temperatures, such as the average temperature and the characteristic temperature. Then, the temperature difference between the ambient temperature and the rated temperature of the microelectromechanical system determines the error of the detection data. Finally, the error of the detection data is used to calibrate the detection data, thereby obtaining accurate detection data.

[0081] In this embodiment, the temperature detection module 10 acquires the first ambient temperature of the sensor before the microelectromechanical system (MEMS) is started; the data acquisition module 20 starts the MEMS to perform detection and obtain detection data; the temperature detection module 10 acquires the second ambient temperature of the sensor after the MEMS outputs the detection data; and the data calibration module 30 calibrates the detection data based on the first and second ambient temperatures. This embodiment calibrates the detection data detected by the MEMS using the first and second ambient temperatures before and after data detection within the sensor chip. Utilizing these first and second ambient temperatures, the average temperature or temperature change trend experienced by the sensor during the output of valid data can be more accurately determined, effectively improving the detection accuracy of the sensor chip.

[0082] Furthermore, in this embodiment, the data calibration module 30 is also used to determine the average operating temperature of the microelectromechanical system based on the first ambient temperature and the second ambient temperature; and to calibrate the detection data based on the average operating temperature.

[0083] Furthermore, in this embodiment, the data calibration module 30 is also used to obtain the heat dissipation coefficient of the sensor and the working time of the microelectromechanical system; determine the temperature rise coefficient of the sensor based on the first ambient temperature, the working time, the second ambient temperature and the heat dissipation coefficient; and determine the average operating temperature of the sensor based on the temperature rise coefficient, the first ambient temperature and the heat dissipation coefficient.

[0084] Furthermore, in this embodiment, the data calibration module 30 is also used to obtain the temperature rise formula of the sensor; and to obtain the temperature rise coefficient of the sensor based on the first ambient temperature, the working time, the second ambient temperature, the heat dissipation coefficient and the temperature rise formula of the sensor.

[0085] Furthermore, in this embodiment, the data calibration module 30 is also used to acquire the temperature characteristic function of the sensor; determine temperature deviation data based on the average operating temperature and the temperature characteristic function; and calibrate the detection data based on the temperature deviation data.

[0086] This invention provides a sensor, with reference to Figure 6 , Figure 6 This is a schematic diagram of the sensor structure proposed in this invention.

[0087] In this embodiment, the sensor includes a microelectromechanical system 100 and a readout integrated circuit 200; the readout integrated circuit 200 includes a temperature detection circuit 210, a gating circuit 220, an analog-to-digital converter circuit 230, and a digital signal processing circuit 240. The temperature detection circuit 210 is connected to the first input terminal of the gating circuit 220, and the microelectromechanical system 100 is connected to the second input terminal of the gating circuit 220; The output terminal of the gating circuit 220 is connected to the input terminal of the analog-to-digital converter circuit 230, and the control terminal of the gating circuit 220 is connected to the digital signal processing circuit 240. The output terminal of the analog-to-digital conversion circuit 230 is connected to the digital signal processing circuit 240; The digital signal processing circuit 240 is used to perform the sensor calibration method described in any of the above embodiments.

[0088] It should be noted that the microelectromechanical system 100 refers to the micro mechanical structure in the sensor responsible for sensing physical quantities (such as acceleration, angular velocity, pressure, sound, etc.). For example, the movable mass block in an accelerometer or the vibrating diaphragm in a microphone. The operating state of the microelectromechanical system 100 (such as displacement, capacitance change) changes with the change of the measured physical quantity. The microelectromechanical system converts physical signals detected by the sensor, such as pressure, magnetic field, etc., into electrical signals. The readout integrated circuit 200 is a dedicated chip配套 with the microelectromechanical system 100, which can provide drive for the microelectromechanical system 100, convert the mechanical response of the microelectromechanical system 100 into an electrical signal, and perform processing such as amplification, filtering, and digitization on the electrical signal, and finally output the detection data available for subsequent circuits, that is, process the electrical signal into an identifiable digital or analog signal.

[0089] Among them, the temperature detection circuit 210 is integrated on the readout integrated circuit and is used to sense the ambient temperature of the microelectromechanical system 100. The temperature detection circuit 210 usually operates based on the temperature characteristics of semiconductor devices (such as the forward voltage drop of a PN junction) and outputs an analog voltage or current signal proportional to the temperature. The temperature detection circuit 210 is the hardware basis for obtaining the first ambient temperature and the second ambient temperature. The gating circuit 220 can be a multiplexer composed of switches such as MOSFETs, electrical components, etc. It has at least two input terminals, one output terminal, and one control terminal. The control terminal is the pin on the gating circuit 220 for receiving the control signal and is driven by the digital signal processing circuit 240 to determine which input signal to select. The gating circuit 220 can, under the control of the digital signal processing circuit, connect the signal path of the temperature detection circuit 210 or the microelectromechanical system 100 to the subsequent analog-to-digital conversion circuit 230 at different times. The analog-to-digital conversion circuit 230 is a circuit that converts an analog signal into a digital signal. The analog-to-digital conversion circuit 230 receives the analog signal output from the gating circuit, which can be a temperature voltage signal or the detection data signal output by the microelectromechanical system 100, and converts it into the corresponding digital code for subsequent digital processing. The digital signal processing circuit 240 can be a microcontroller, a digital signal processor, or a dedicated state machine. The digital signal processing circuit 240 is responsible for controlling the entire measurement timing, such as controlling the gating circuit, reading the digital output of the ADC, executing the calibration algorithm, and outputting the final calibration result.

[0090] In the specific implementation process, before starting the microelectromechanical system 100, the digital signal processing circuit 240 can control the gating circuit 220 to establish a connection between the temperature detection circuit 210 and the analog-to-digital converter circuit 230 through the control terminal of the gating circuit 220, and receive the first ambient temperature through the analog-to-digital converter circuit 230. Then, the digital signal processing circuit 240 can control the gating circuit 220 to establish a connection between the microelectromechanical system 100 and the analog-to-digital converter circuit 230 through the control terminal of the gating circuit 220, and receive the detection data through the analog-to-digital converter circuit 230. Next, the digital signal processing circuit 240 can control the gating circuit 220 to establish a connection between the temperature detection circuit 210 and the analog-to-digital converter circuit 230 through the control terminal of the gating circuit 220, and receive the second ambient temperature through the analog-to-digital converter circuit 230. Finally, the digital signal processing circuit 240 performs the sensor calibration method described in any of the above embodiments to calibrate the detection data based on the received first ambient temperature, second ambient temperature, and detection data, thereby obtaining accurate detection data. During this process, the temperature detection circuit 210 detects the ambient temperature of the microelectromechanical system 100 in real time.

[0091] In this embodiment, high cost-effectiveness and small size are achieved through resource reuse: a gating circuit 220 is used to enable a high-precision analog-to-digital converter module 230 to be time-division multiplexed, which can collect both ambient temperature and detection data, avoiding the cost of using two independent analog-to-digital converter modules 230 and the increase in sensor area.

[0092] Furthermore, by setting the sensor structure, the first ambient temperature and the second ambient temperature can be obtained by adjusting the control timing of each structure in the sensor without adding any additional structures. Using these first and second ambient temperatures, the average temperature or temperature change trend experienced by the sensor during the output of valid data can be more accurately determined, effectively improving the detection accuracy of the sensor chip.

[0093] Furthermore, refer to Figure 7 , Figure 7 This is a circuit diagram of the temperature detection circuit in the sensor proposed in this invention.

[0094] In this embodiment, the temperature detection circuit 210 includes: a current source I and a transistor Q; The output terminal of the current source I is connected to the emitter of the transistor Q and the first input terminal of the gating circuit 220, and the base and collector of the transistor Q are grounded.

[0095] It should be noted that current source I is a circuit module capable of outputting a constant current. Regardless of how the voltage at its output terminal varies within a certain range, the current value it provides remains stable. In this embodiment, current source I can provide a precise bias current with a known amplitude to the transistor. Transistor Q is used as a temperature sensing element. The forward voltage drop between the base and emitter of transistor Q has a good negative temperature coefficient, meaning that the forward voltage drop decreases approximately linearly as the junction temperature increases.

[0096] In practice, by connecting the emitter of transistor Q to current source I, current source I provides a stable current value to the emitter of transistor Q. Within the environment in which the microelectromechanical system 100 operates, the forward voltage drop between the base and emitter of transistor Q changes due to ambient temperature, resulting in different voltage values ​​at the emitter of transistor Q. At the start-up of the microelectromechanical system 100, this voltage value corresponds to the first ambient temperature; at the moment the microelectromechanical system 100 outputs detection data, this voltage value corresponds to the second ambient temperature.

[0097] The present invention provides a computer-readable storage medium having computer-readable program instructions (i.e., computer programs) stored thereon, the computer-readable program instructions being used to perform the sensor calibration method in the above embodiments.

[0098] The computer-readable storage medium provided by this invention may be, for example, a USB flash drive, but is not limited to, electrical, magnetic, optical, electromagnetic, infrared, or semiconductor systems or devices, or any combination thereof. More specific examples of a computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof. In this embodiment, the computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system or device. The program code contained on the computer-readable storage medium may be transmitted using any suitable medium, including but not limited to: wires, optical cables, RF (Radio Frequency), etc., or any suitable combination thereof.

[0099] The aforementioned computer-readable storage medium may be included in the sensor or may exist independently without being assembled into the sensor.

[0100] The aforementioned computer-readable storage medium carries one or more programs that, when executed by the sensor, cause the sensor to perform calibration.

[0101] Computer program code for performing the operations of this invention can be written in one or more programming languages ​​or a combination thereof, including object-oriented programming languages ​​such as Java, Smalltalk, and C++, as well as conventional procedural programming languages ​​such as "C" or similar languages. The program code can be executed entirely on the user's computer, partially on the user's computer, as a standalone software package, partially on the user's computer and partially on a remote computer, or entirely on a remote computer or server. In cases involving remote computers, the remote computer can be connected to the user's computer via any type of network—including a local area network (LAN) or a wide area network (WAN)—or can be connected to an external computer (e.g., via the Internet using an Internet service provider).

[0102] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present invention. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in the block diagrams and / or flowcharts, and combinations of blocks in the block diagrams and / or flowcharts, can be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions.

[0103] The modules described in the embodiments of the present invention can be implemented in software or hardware. The names of the modules do not necessarily limit the specific unit itself.

[0104] The readable storage medium provided by this invention is a computer-readable storage medium that stores computer-readable program instructions (i.e., a computer program) for performing the above-described sensor calibration method, thereby solving the technical problem of sensor calibration. Compared with the prior art, the beneficial effects of the computer-readable storage medium provided by this invention are the same as those of the sensor calibration method provided in the above embodiments, and will not be repeated here.

[0105] The present invention also provides a computer program product, including a computer program that, when executed by a processor, implements the steps of the sensor calibration method described above.

[0106] The computer program product provided by this invention can solve the technical problem of sensor calibration. Compared with the prior art, the beneficial effects of the computer program product provided by this invention are the same as those of the sensor calibration method provided in the above embodiments, and will not be repeated here.

[0107] The above are merely preferred embodiments of the present invention and do not limit the patent scope of the present invention. Any equivalent structural or procedural transformations made based on the content of the present invention specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of the present invention.

Claims

1. A sensor calibration method, characterized in that, The sensor calibration method is applied to a sensor, which includes a microelectromechanical system and a readout integrated circuit. Sensor calibration methods include: Obtain the first ambient temperature of the sensor before the microelectromechanical system starts up; The microelectromechanical system (MEMS) is activated; the MEMS is used for detection. The second ambient temperature of the sensor after acquiring the detection data output by the microelectromechanical system; The detection data is calibrated based on the first ambient temperature and the second ambient temperature.

2. The sensor calibration method as described in claim 1, characterized in that, The calibration of the detection data based on the first ambient temperature and the second ambient temperature includes: The average operating temperature of the microelectromechanical system is determined based on the first ambient temperature and the second ambient temperature. The detection data is calibrated based on the average operating temperature.

3. The sensor calibration method as described in claim 2, characterized in that, Determining the average operating temperature of the microelectromechanical system based on the first ambient temperature and the second ambient temperature includes: The heat dissipation coefficient of the sensor and the operating time of the microelectromechanical system are obtained; The temperature rise coefficient of the sensor is determined based on the first ambient temperature, the working time, the second ambient temperature, and the heat dissipation coefficient. The average operating temperature of the sensor is determined based on the heating coefficient, the first ambient temperature, and the heat dissipation coefficient.

4. The sensor calibration method as described in claim 3, characterized in that, Determining the temperature rise coefficient of the sensor based on the first ambient temperature, the operating time, the second ambient temperature, and the heat dissipation coefficient includes: Obtain the temperature rise formula for the sensor; The temperature rise coefficient of the sensor is obtained based on the first ambient temperature, the working time, the second ambient temperature, the heat dissipation coefficient, and the temperature rise formula of the sensor.

5. The sensor calibration method according to any one of claims 2 to 4, characterized in that, The calibration of the detection data based on the average operating temperature includes: Obtain the temperature characteristic function of the sensor; The temperature deviation data is determined based on the average operating temperature and the temperature characteristic function; The detection data is calibrated based on the temperature deviation data.

6. A sensor calibration device, characterized in that, include: The temperature detection module is used to obtain the initial ambient temperature of the sensor before the microelectromechanical system starts up. The data acquisition module is used to start the microelectromechanical system to perform detection and obtain detection data; The temperature detection module is used to acquire the second ambient temperature of the sensor after the microelectromechanical system outputs detection data; The data calibration module is used to calibrate the detection data based on the first ambient temperature and the second ambient temperature.

7. A storage medium, characterized in that, The storage medium stores a computer program that, when executed by the sensor, implements the steps of the sensor calibration method as described in any one of claims 1 to 5.

8. A computer program product, characterized in that, The computer program product includes a computer program that, when executed by the sensor, implements the steps of the sensor calibration method as described in any one of claims 1 to 5.

9. A sensor, characterized in that, include: Microelectromechanical systems and readout integrated circuits; The readout integrated circuit includes: a temperature detection circuit, a gating circuit, an analog-to-digital conversion circuit, and a digital signal processing circuit; The temperature detection circuit is connected to the first input terminal of the gating circuit, and the microelectromechanical system is connected to the second input terminal of the gating circuit. The output terminal of the gating circuit is connected to the input terminal of the analog-to-digital converter circuit, and the control terminal of the gating circuit is connected to the digital signal processing circuit. The output of the analog-to-digital converter circuit is connected to the digital signal processing circuit. The digital signal processing circuit is used to perform the sensor calibration method according to any one of claims 1 to 5.

10. The sensor as described in claim 9, characterized in that, The temperature detection circuit includes: a current source and a transistor; The output terminal of the current source is connected to the emitter of the transistor and the first input terminal of the gating circuit, and the base and collector of the transistor are grounded.

Images