Solid state drive control method and electronic device

Abstract

The present disclosure provides a solid state disk control method and electronic equipment, and relates to the technical field of solid state disks. The method for prolonging the service life of a solid state disk comprises the following steps: receiving a mode switching instruction, or detecting that the proportion of the service life consumption of the solid state disk is greater than a preset threshold, and that the current power supply state and / or temperature state of the solid state disk meets a preset condition; switching the working mode of the solid state disk to a service life prolonging mode; in the service life prolonging mode, the data retention time parameter of the solid state disk is configured to be a preset value lower than the standard data retention time. The embodiments of the present disclosure can prolong the service life of the solid state disk.

Description

Technical Field

[0001] This disclosure relates to the field of solid-state drive technology, and in particular to a solid-state drive control method and electronic device. Background Technology

[0002] This section is intended to provide background or context for the embodiments of this disclosure as set forth in the claims. The description herein is not intended to be a prior art simply because it is included in this section.

[0003] Currently, the lifespan design of solid-state drives (SSDs) is generally based on conservative data retention requirements (such as standard data retention time), meaning that data must not be lost even after power failure for several months or even years at the end of its lifespan. While this can cover general and demanding scenarios, the overly conservative data retention time design limits the usable write and erase potential of SSDs, resulting in a lower actual lifespan. Summary of the Invention

[0004] The purpose of this disclosure is to provide a solid-state drive (SSD) control method and electronic device that can significantly improve the actual lifespan of an SSD without changing its manufacturing process.

[0005] Other features and advantages of this disclosure will become apparent from the following detailed description, or may be learned in part from practice of this disclosure.

[0006] This disclosure provides a solid-state drive (SSD) control method, including: receiving a mode switching command, or detecting that the current power supply state and / or temperature state of the SSD meets preset conditions; switching the operating mode of the SSD to a lifespan extension mode; and in the lifespan extension mode, configuring the data retention time parameter of the SSD to a preset value lower than the standard data retention time.

[0007] In some embodiments, the method further includes: detecting that the lifespan consumption ratio of the solid-state drive is greater than a preset threshold and that the current power supply status and / or temperature status of the solid-state drive meets preset conditions, and controlling the solid-state drive to enter a lifespan extension mode.

[0008] In some embodiments, the method further includes: in the extended lifespan mode, acquiring error correction information of the solid-state drive; and improving the error correction capability of the solid-state drive based on the bit error rate change trend in the error correction information.

[0009] In some embodiments, the method further includes: in the lifetime extension mode, relaxing the criteria for determining a storage block as a bad block.

[0010] In some embodiments, the method further includes: configuring the reserved space of the solid-state drive as a writing area for garbage collection data in the lifespan extension mode.

[0011] In some embodiments, the method further includes: in the lifetime extension mode, redirecting the write load of the solid-state drive from the available space of the solid-state drive to the reserved space of the solid-state drive.

[0012] In some embodiments, the method further includes: reducing the background scan frequency in the lifespan extension mode, thereby reducing the power consumption of the solid-state drive in the idle state.

[0013] In some embodiments, the method further includes: receiving a lifetime extension mode exit instruction, or detecting that the current power supply status and / or temperature status of the solid-state drive does not meet preset conditions; controlling the solid-state drive to exit the lifetime extension mode; wherein controlling the solid-state drive to exit the lifetime extension mode includes: configuring the data retention time parameter of the solid-state drive to the standard data retention time.

[0014] In some embodiments, controlling the solid-state drive to exit the lifespan extension mode further includes: reverting at least one of the solid-state drive's error correction strategy, bad block management strategy, garbage collection strategy, write scheduling strategy, and data refresh strategy to the configuration before entering the lifespan extension mode.

[0015] This disclosure provides a solid-state drive control device, including a detection module and a lifespan extension control module.

[0016] The detection module is used to receive a mode switching command, or to detect that the current power supply status and / or temperature status of the solid-state drive meets preset conditions; the lifespan extension control module is used to switch the working mode of the solid-state drive to the lifespan extension mode; in the lifespan extension mode, the data retention time parameter of the solid-state drive is configured to a preset value lower than the standard data retention time.

[0017] This disclosure provides an electronic device comprising: a memory and a processor; the memory for storing computer program instructions; and the processor for calling the computer program instructions stored in the memory to implement the solid-state drive control method described above.

[0018] This disclosure provides a computer-readable storage medium storing computer program instructions to implement the solid-state drive control method as described in any of the preceding embodiments.

[0019] This disclosure provides a computer program product or computer program that includes computer program instructions stored in a computer-readable storage medium. The computer program instructions are read from the computer-readable storage medium, and the processor executes the computer program instructions to implement the aforementioned solid-state drive control method.

[0020] The solid-state drive control method, apparatus, electronic device, computer-readable storage medium, and computer program product provided in this disclosure switch the solid-state drive to a lifespan extension mode based on external instructions or real-time detection results of power supply and temperature. In this mode, by configuring the data retention time parameter to a preset value lower than the standard design value, the redundancy requirements for data retention during long-term power outages are effectively relaxed, thereby releasing the available erase / write cycles of the NAND flash memory and significantly extending the actual lifespan of the solid-state drive without changing the hardware structure and manufacturing process.

[0021] It should be understood that the above general description and the following detailed description are merely exemplary and do not limit this disclosure. Attached Figure Description

[0022] The accompanying drawings, which are incorporated in and form part of this specification, illustrate embodiments consistent with this disclosure and, together with the description, serve to explain the principles of this disclosure. It is obvious that the drawings described below are merely some embodiments of this disclosure, and those skilled in the art can obtain other drawings based on these drawings without any inventive effort.

[0023] Figure 1 A schematic diagram of a scenario corresponding to the solid-state drive control method applicable to the embodiments of this disclosure is shown.

[0024] Figure 2 This is a flowchart of a solid-state drive control method in an exemplary embodiment of this disclosure.

[0025] Figure 3 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0026] Figure 4 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0027] Figure 5 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0028] Figure 6 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0029] Figure 7 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0030] Figure 8 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0031] Figure 9 This is a flowchart illustrating a method for extending the lifespan of a solid-state drive according to an exemplary embodiment.

[0032] Figure 10 This is a block diagram illustrating a solid-state drive control device according to an exemplary embodiment.

[0033] Figure 11 A schematic diagram of the structure of an electronic device suitable for implementing embodiments of the present disclosure is shown. Detailed Implementation

[0034] Exemplary embodiments will now be described more fully with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in many forms and should not be construed as limited to the embodiments set forth herein; rather, they are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the exemplary embodiments to those skilled in the art. The same reference numerals in the drawings denote the same or similar parts, and therefore repeated descriptions of them will be omitted.

[0035] Those skilled in the art will recognize that embodiments of this disclosure can be a system, apparatus, device, method, or computer program product. Therefore, this disclosure can be implemented in the following forms: entirely hardware, entirely software (including firmware, resident software, microcode, etc.), or a combination of hardware and software.

[0036] The features, structures, or characteristics described in this disclosure can be combined in any suitable manner in one or more embodiments. Numerous specific details are provided in the following description to give a thorough understanding of embodiments of this disclosure. However, those skilled in the art will recognize that the technical solutions of this disclosure can be practiced with one or more specific details omitted, or other methods, components, apparatuses, steps, etc., can be employed. In other instances, well-known methods, apparatuses, implementations, or operations are not shown or described in detail to avoid obscuring various aspects of this disclosure.

[0037] In this disclosure, the terms "module" or "unit" refer to a computer program or part of a computer program that has a predetermined function and works with other related parts to achieve a predetermined goal, and can be implemented wholly or partially using software, hardware (such as processing circuitry or memory), or a combination thereof. Similarly, a processor (or multiple processors or memory) can be used to implement one or more modules or units. Furthermore, each module or unit can be part of an overall module or unit that includes the functionality of that module or unit.

[0038] The accompanying drawings are merely illustrative of this disclosure, and the same reference numerals in the drawings denote the same or similar parts, thus omitting repeated descriptions of them. Some block diagrams shown in the drawings do not necessarily correspond to physically or logically independent entities. These functional entities may be implemented in software, in one or more hardware modules or integrated circuits, or in different network and / or processor devices and / or microcontroller devices.

[0039] The flowchart shown in the accompanying drawings is merely illustrative and does not necessarily include all content and steps, nor does it require execution in the described order. For example, some steps may be broken down, while others may be combined or partially combined; therefore, the actual execution order may change depending on the specific circumstances.

[0040] In the description of this disclosure, unless otherwise stated, " / " means "or," for example, A / B can mean A or B. "And / or" in this document is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone. Furthermore, "at least one" means one or more, and "multiple" means two or more. The terms "first," "second," etc., do not limit the quantity or order of execution, and "first," "second," etc., do not necessarily imply differences; the terms "contains," "includes," and "has" are used to indicate an open-ended meaning of inclusion and refer to the existence of additional elements / components / etc. besides those listed.

[0041] In related technologies, current SSD lifespan management strategies are generally designed based on industry-standard data retention requirements, such as enterprise-grade NVMe SSDs (Non-Volatile Memory Express Solid-State Drives). At the end of their rated lifespan (e.g., when NAND Flash memory reaches the end of its write cycles), they typically need to maintain data retention for several months at 25 degrees Celsius. SSD controller firmware is designed with this worst-case data retention requirement as a lifespan constraint. This approach covers common usage scenarios, including long-term storage after power loss, and offers a high safety margin.

[0042] However, in data center scenarios with long-term stable power supply and controllable temperature, the above-mentioned solution's overly conservative data retention design limits the usable erase and write potential of NAND Flash, resulting in a lower actual lifespan of the SSD.

[0043] To extend the lifespan of solid-state drives (SSDs), some manufacturers improve their manufacturing processes. However, this approach typically relies on increased hardware costs or process improvements, and cannot significantly extend the lifespan of already deployed SSDs under existing hardware conditions, while also being costly.

[0044] In the existing enterprise-grade NVMe SSD technology system, the mainstream technical approaches to lifetime management focus on the following directions.

[0045] 1. Improve write / erase life by increasing the NAND Flash manufacturing process level or increasing over-provisioning.

[0046] 3. Conservative design meets data retention requirements under the worst conditions.

[0047] The aforementioned technical approaches all take "meeting the longest data retention time" as their basic design premise, and their core objective is to ensure that SSDs can maintain data reliability for a relatively long period of time even under power outages and extreme environmental conditions. In this technical context, the conventional thinking of those skilled in the art is to enhance reliability by further improving data retention capabilities, rather than actively reducing data retention requirements.

[0048] Therefore, in the existing technological system, there is no technological inspiration to use "reducing data retention time requirements" as a means to extend the lifespan of SSDs.

[0049] This application proposes a reverse technical approach based on the characteristics of the actual operating environment of data centers: in a data center environment with long-term stable power supply and controllable temperature, the data retention requirements originally used to cover extreme power outage scenarios are dynamically relaxed, thereby releasing the usable erase and write potential of NAND Flash.

[0050] This technical approach is not a simple superposition of existing technologies or parameter optimization, but a remodeling of the design constraints of SSD lifespan, breaking through the traditional design logic that "data retention time must always be maximized".

[0051] Without the technical teaching of this application, it would be difficult for someone skilled in the art to naturally conceive of achieving a significant increase in lifetime by reducing data retention requirements; therefore, this application is not obvious.

[0052] The exemplary embodiments of this disclosure will now be described in detail with reference to the accompanying drawings.

[0053] Figure 1 A schematic diagram of a scenario corresponding to the solid-state drive control method applicable to the embodiments of this disclosure is shown.

[0054] Please refer to Figure 1 The diagram illustrates an implementation environment provided by an exemplary embodiment of this disclosure.

[0055] like Figure 1 As shown, this implementation environment can be embodied as a system architecture. The core of the system architecture includes at least one electronic device 101.

[0056] The electronic device 101 refers to any computing entity that integrates and manages a solid-state drive (SSD) 102, and its specific form is not limited to the scheme of this application. Generally, it includes, but is not limited to, the following device types: various servers deployed in data centers (such as rack servers, blade servers), high-performance workstations, personal computers, mobile terminals (such as smartphones, tablets), wearable devices, and dedicated network-attached storage (NAS) devices or storage area network (SAN) devices, etc.

[0057] The solid-state drive (SSD) control method described in this disclosure has a flexible execution entity. In some embodiments, the method can be executed entirely autonomously by the controller (i.e., firmware) inside the SSD. In other embodiments, the electronic device 101 (i.e., the host system) can lead or participate in the execution by sending commands or through collaborative management. Furthermore, the method can also be implemented through close collaboration between the SSD controller and the electronic device 101, for example, the host system determines the operating environment and issues mode switching commands, while the SSD controller specifically executes the collaborative adjustment of various strategies.

[0058] The method proposed in this disclosure is also scalable in application.

[0059] At the single-device level, the method can be applied to a single solid-state drive deployed in a standalone electronic device 101 for individualized lifetime optimization management.

[0060] At the cluster or system level, the method can be extended to solid-state drive (SSD) clusters consisting of multiple electronic devices (e.g., a server cluster or an entire data center). In this scenario, the method can be invoked by a centralized management system or a distributed management module to uniformly monitor and implement policies regarding the operating status and lifespan of a large number of SSDs within the cluster, thereby achieving scalable lifespan extension and cost savings.

[0061] This proposal does not rely on changes to NAND Flash technology or hardware structure. Instead, it dynamically adjusts data retention constraints in lifetime management based on the actual operating environment of the data center, thereby releasing the usable lifetime potential of NAND Flash at the system level.

[0062] Figure 2 This is a flowchart illustrating a solid-state drive control method according to an exemplary embodiment.

[0063] Reference Figure 2 The solid-state drive control method provided in this disclosure may include the following steps.

[0064] Step S202: Receive a mode switching command, or detect that the current power supply status and / or temperature status of the solid-state drive meets preset conditions.

[0065] In some embodiments, real-time operating environment information of the solid-state drive can be detected or acquired; the real-time operating environment information may include at least one of power supply status information and temperature status information.

[0066] The real-time operating environment can refer to the set of immediate external conditions that affect the data reliability and lifespan management decisions of a solid-state drive (SSD) during its operation. For example, it can include at least one of the SSD's power supply status, temperature status, and operating humidity.

[0067] In some embodiments, the operating environment parameters of the solid-state drive can be obtained, including at least the power supply status and operating temperature.

[0068] In some embodiments, it can be determined whether the current power supply state of the solid-state drive is in a stable power supply state for a long period of time (such as being in a stable state for a preset period of time, which can be a preset condition), and / or whether the temperature state of the solid-state drive is within a preset range.

[0069] Step S204: Switch the operating mode of the solid-state drive to the lifespan extension mode; in the lifespan extension mode, the data retention time parameter of the solid-state drive is configured to a preset value lower than the standard data retention time.

[0070] In some embodiments, when a mode switching command is received by the solid-state drive (SSD), or when the current power supply status and / or temperature status of the SSD meets preset conditions, the operating mode of the SSD is switched to the lifespan extension mode; in the lifespan extension mode, the data retention time parameter of the SSD is configured to a preset value lower than the standard data retention time.

[0071] For example, if the current power supply status of the solid-state drive is detected to be in a long-term stable power supply state, and / or the temperature status of the solid-state drive is within a preset range, it can be determined that the current power supply status and / or temperature status of the solid-state drive meet the preset conditions, and thus it can be determined that the solid-state drive is in a safe operating environment.

[0072] In some embodiments, it can be determined whether the solid-state drive is in a safe operating environment based on real-time operating environment information (such as humidity, temperature, power supply status, etc.).

[0073] In some embodiments, the aforementioned secure operating environment may refer to an application scenario where the server operates continuously for a long period of time and has data redundancy or data recovery mechanisms.

[0074] In some embodiments, when an SSD (such as an NVMe SSD) is detected to be continuously powered and its operating temperature (and / or humidity) is within a preset safe temperature range, it can be determined that the SSD is in a controlled data center operating environment.

[0075] In some embodiments, when it is determined that the solid-state drive is in a safe operating environment, the solid-state drive is controlled to enter a lifespan extension mode; wherein in the lifespan extension mode, the data retention time parameter of the solid-state drive is configured to a preset value lower than the standard data retention time.

[0076] The standard data retention time can be a pre-designed standard design retention duration.

[0077] In some embodiments, the standard design retention period can be a data retention time of not less than several months at the end of the rated life of the solid-state drive (such as NVMe SSD) and under preset temperature (such as 25 degrees Celsius).

[0078] Controlling the solid-state drive (SSD) to enter a lifespan extension mode can include dynamically adjusting the SSD's data retention strategy based on the negative correlation between the flash memory write cycles and data retention time. For example, reducing the required data retention time for the SSD can extend its lifespan. Specifically, the SSD's data retention time parameter can be configured from a first duration (standard data retention time) to a second duration (shortened value), where the second duration is shorter than the first duration.

[0079] In this application, "extended lifespan" can refer to increasing the total number of erase / write cycles of the NAND flash memory of the solid-state drive compared to the design value under the standard data retention strategy, while meeting the adjusted target data retention time.

[0080] In some embodiments, controlling a solid-state drive (SSD) to enter a lifespan extension mode may include: dynamically adjusting the SSD's data retention strategy, reducing the required data retention time from the standard design retention time to a preset target retention time, thereby extending the SSD's lifespan.

[0081] In some embodiments, after entering the lifespan extension mode, the target number of erase / write cycles corresponding to the target retention time can be determined according to the decay model between data retention time and erase / write cycles. Then, once the actual number of erase / write cycles of the solid-state drive reaches the target number of erase / write cycles, the solid-state drive is controlled to stop working.

[0082] In some embodiments, after entering the lifespan extension mode, the lifespan status information of the solid-state drive (SSD) can be acquired in real time to determine the remaining shelf life of the SSD. Once it is determined from the SSD's lifespan status information that the remaining shelf life is less than or equal to the target shelf life, the SSD is controlled to cease operation.

[0083] In some embodiments, the remaining retainable duration can refer to the longest power outage time estimated at the current moment, based on the actual wear and tear of the SSD (such as PE cycles, error rate, etc.) and the current operating conditions (such as temperature), which can still guarantee that the data will not be lost.

[0084] In some embodiments, the remaining retention time of a solid-state drive (SSD) can be determined by combining data such as the number of erase / write cycles, offset voltage, and bad block ratio from the SSD's lifespan status information.

[0085] In some embodiments, the real-time data retention capability of a solid-state drive (SSD) can be accurately assessed by fusing multi-dimensional lifespan status information. Specifically, the system continuously monitors and analyzes key parameters, including but not limited to the current number of erase / write cycles of the NAND flash memory, threshold voltage offset trends, bad block ratio and growth rate, original bit error rate and its gradient, operating temperature, and reserved space consumption. Based on these dynamic parameters, the system constructs and updates a data retention capability decay model to calculate the remaining retention time that the SSD can reliably retain data under current wear and tear conditions and environmental conditions. Once the calculated remaining time approaches or falls below the preset target retention time (e.g., 7 days in the lifespan extension mode), the system will automatically trigger protection mechanisms, such as stopping writing or switching to read-only mode, to ensure that while fully utilizing the potential of the SSD's lifespan, the ultimate bottom line of data security is always maintained.

[0086] In practical implementation, multi-dimensional real-time monitoring of the SSD's operating status enables dynamic assessment of its remaining data retention capacity. For example, if the system detects that an enterprise-grade NVMe SSD used for caching logs has accumulated more than 150% of its nominal lifespan, and simultaneously its flash memory cell threshold voltage average offset has increased by 40% compared to a new drive, its original bit error rate has increased by more than 15% week-on-week, and the current ambient temperature is stable at 30 degrees Celsius, after calculating using a preset attenuation model based on these parameters, it is determined that the drive has approximately 5 days of remaining data retention time in its current state—below the 7-day safety threshold set for hot data in data centers. At this point, the system will automatically trigger protection: immediately stop writing new log data to the drive, mark it as read-only for existing data queries, and seamlessly switch the write load to other healthy drives in the cluster. This mechanism maximizes the lifespan of a single drive while ensuring that the data reliability of the entire storage system is not compromised through precise critical warnings.

[0087] Lifespan status information refers to a set of parameters and indicators that reflect the current health, wear rate, and remaining lifespan of a solid-state drive (SSD). This information is typically collected, calculated, and reported in real time by the SSD controller firmware to quantitatively assess the SSD's wear condition and provide data for lifespan management decisions.

[0088] For example, lifetime status information may include, but is not limited to, the following information.

[0089] 1. NAND flash memory write / erase cycles: The average program-erase cycle count for a specific storage block or the entire disk is the core raw metric for measuring physical wear and tear.

[0090] 2. Lifetime Consumption Ratio: The lifetime consumed is expressed as a percentage and is usually calculated based on the maximum number of erase / write cycles designed for the device.

[0091] 3. Remaining lifespan estimate: The estimated remaining lifespan or total amount of data that can be written to the SSD based on the current wear rate.

[0092] 4. Error correction status: such as the original bit error rate, the frequency of error correction engine intervention, and the number of rereads, which reflect the decay of the charge retention capability of the storage unit.

[0093] 5. Data retention margin indicator: The estimated margin of actual data retention time relative to the design requirements, based on the current number of erase / write cycles and temperature.

[0094] 6. Bad block count and growth trend: The number of memory cells marked as unusable and the rate at which they increase over time.

[0095] 7. Reserved space consumption rate: The utilization of excess space used to replace bad blocks or for garbage recycling indirectly reflects the reliability of the media.

[0096] 8. Write amplification factor: The ratio of the actual amount of data written to the NAND flash memory to the amount of data requested by the host. An increase in this factor will accelerate the wear and tear of the NAND flash memory.

[0097] In some embodiments, updated health status information can be output through an external interface, indicating that the maximum number of erase / write cycles is higher than the maximum number of erase / write cycles corresponding to the standard data retention time parameter.

[0098] The data retention duration, also known as data retention time, data retention period, or data retention strategy, refers to the longest duration during which a storage medium (such as NAND Flash memory cells in a solid-state drive) can reliably maintain the stored data charge without data loss or errors exceeding the error correction tolerance under extreme conditions (such as power outages).

[0099] In some embodiments, the standard design retention period can be a data retention time of not less than several months at 25 degrees Celsius at the end of the rated life of the solid-state drive (such as NVMe SSD).

[0100] In some embodiments, the target retention time can be set to approximately 10% of the standard design retention time.

[0101] In some embodiments, the target retention period can be designed to range from several days to several weeks.

[0102] In some embodiments, after adjusting the data retention strategy, the lifespan management strategy of the solid-state drive can be further optimized in a coordinated manner.

[0103] Furthermore, the adjusted lifespan management strategy can assess and dynamically determine the actual remaining lifespan of the solid-state drive based on its real-time operating status information (such as the number of erase / write cycles of NAND flash memory, cell voltage drift, etc.).

[0104] For example, if the actual remaining lifespan of the solid-state drive is determined to be equal to or lower than the data retention time required in the adjusted data retention strategy based on real-time operating status information, the solid-state drive can be controlled to enter a safety lock state or stop its data writing operation to ensure the ultimate reliability of the data.

[0105] Therefore, by reducing the data retention time requirement, the theoretical number of write cycles available for solid-state drives can be significantly increased, which directly translates into an effective extension of their lifespan in practical applications.

[0106] In some embodiments, while maintaining a constant operating temperature, the theoretical number of write cycles of the solid-state drive can be increased to several times the original design value by shortening the target data retention time from the original design retention time (standard design retention time) to a preset target retention time.

[0107] For example, when the operating temperature is about 25 degrees Celsius, the original design retention time is about three months, and the target retention time is about seven days, the theoretical number of write cycles available for the solid-state drive can be increased to about 230% of the original design value.

[0108] Specifically, under a controlled operating environment (i.e. a secure operating environment), the target data retention time of the NVMe SSD is dynamically adjusted from the standard design retention time to a target retention time that is less than the standard design retention time. Based on the exponential decay relationship model between the number of NAND Flash erase / write cycles and the data retention time in the solid-state drive, it can be determined that the theoretically available number of erase / write cycles of the solid-state drive can be increased to several times the original design value, thereby extending its lifespan.

[0109] In some embodiments, the above exponential decay relationship model can satisfy the following relationship: the data retention time is exponentially decaying with the number of NAND Flash erase / write cycles, or the available number of NAND Flash erase / write cycles is logarithmically related to the data retention time.

[0110] Below, this application will explain and illustrate the theoretical calculation logic for increasing the lifespan to approximately 230%.

[0111] Under constant temperature conditions, the data retention time of NAND Flash exhibits an exponential decay relationship with the number of erase / write cycles, which can be expressed as follows: Data retention time R and the number of erase / write cycles PE satisfy the following relationship: R = A·e^(-k·PE). Where A and k are constants related to the NAND Flash process. From the above relationship, it can be concluded that the number of erase / write cycles PE and the data retention time R have a logarithmic relationship: PE ∝ ln(R).

[0112] In the secure operating environment targeted by this application, the solid-state drive can retain data for 3 months (approximately 90 days) at 25 degrees Celsius when it reaches the end of its original design life (100% lifespan consumption).

[0113] When the target data retention time is adjusted to about 7 days, the corresponding theoretical available number of erase / write cycles is: PE_new / PE_original = ln(90) / ln(7)≈2.3.

[0114] Therefore, under the condition of maintaining a constant operating temperature, by reducing the data retention time requirement, the theoretical number of write cycles available for solid-state drives can be increased to about 230% of the original design value.

[0115] This lifespan improvement stems from the physical degradation mechanism of NAND Flash itself, rather than simply from adjusting engineering parameters, and has a clear theoretical basis.

[0116] This method dynamically reduces the duration requirement of the data retention strategy when the solid-state drive is detected to be in a safe operating environment with continuous power supply and controllable temperature. Based on the exponential decay relationship between the number of erase / write cycles of NAND flash memory and the data retention time, the theoretical number of erase / write cycles available for the solid-state drive is significantly increased, thereby significantly extending its service life without changing the hardware process.

[0117] In some embodiments, the solid-state drive (SSD) can be controlled to enter a lifespan extension mode when it is detected that the lifespan consumption ratio of the SSD is greater than a preset threshold and the current power supply status and / or temperature status of the SSD meet preset conditions.

[0118] Figure 3 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0119] refer to Figure 3 The above solid-state drive control method may include the following steps.

[0120] Step S302: Obtain the real-time operating environment information of the solid-state drive; the real-time operating environment information includes at least one of power supply status information and temperature status information.

[0121] Step S304: Determine whether the solid-state drive is in a safe operating environment based on real-time operating environment information.

[0122] Step S306: Obtain the lifespan status information of the solid-state drive.

[0123] Lifespan status information refers to a set of parameters and indicators that reflect the current health, wear rate, and remaining lifespan of a solid-state drive (SSD). This information is typically collected, calculated, and reported in real time by the SSD controller firmware to quantitatively assess the SSD's wear condition and provide data for lifespan management decisions.

[0124] For example, lifetime status information may include, but is not limited to, the following information.

[0125] 1. NAND flash memory write / erase cycles: The average program-erase cycle count for a specific storage block or the entire disk is the core raw metric for measuring physical wear and tear.

[0126] 2. Lifetime Consumption Ratio: The lifetime consumed is expressed as a percentage and is usually calculated based on the maximum number of erase / write cycles designed for the device.

[0127] 3. Remaining lifespan estimate: The estimated remaining lifespan or total amount of data that can be written to the SSD based on the current wear rate.

[0128] 4. Error correction status: such as the original bit error rate, the frequency of error correction engine intervention, and the number of rereads, which reflect the decay of the charge retention capability of the storage unit.

[0129] 5. Data retention margin indicator: The estimated margin of actual data retention time relative to the design requirements, based on the current number of erase / write cycles and temperature.

[0130] 6. Bad block count and growth trend: The number of memory cells marked as unusable and the rate at which they increase over time.

[0131] 7. Reserved space consumption rate: The utilization of excess space used to replace bad blocks or for garbage recycling indirectly reflects the reliability of the media.

[0132] 8. Write amplification factor: The ratio of the actual amount of data written to the NAND flash memory to the amount of data requested by the host. An increase in this factor will accelerate the wear and tear of the NAND flash memory.

[0133] These parameters together form a multi-dimensional profile of the SSD's "health," providing key inputs for determining whether and how to implement lifespan extension strategies (such as dynamically adjusting data retention requirements).

[0134] In some embodiments, the lifespan status parameters of the solid-state drive can be obtained, including at least the number of erase / write cycles or the lifespan consumption ratio of the NAND Flash.

[0135] In some embodiments, the lifespan of a solid-state drive (SSD) can be determined based on the number of NAND flash memory erase / write cycles. For example, when the number of NAND flash memory erase / write cycles reaches a preset threshold, the SSD can be determined to have reached 100% of its preset lifespan.

[0136] Step S308: Determine the lifespan consumption ratio of the solid-state drive based on the lifespan status information.

[0137] In some embodiments, the lifespan consumption ratio can be directly obtained by reading parameters such as the number of NAND flash write cycles or the percentage of lifespan consumption reported by the SSD controller. For example, when the SSD firmware shows that its average number of flash write cycles has reached 80% of the design limit, or when the health management module directly reports that the lifespan consumption ratio is 80%, the system determines that the current lifespan consumption ratio is 80%.

[0138] Step S310: If the lifespan consumption ratio is greater than a preset threshold and the solid-state drive is in a safe operating environment, control the solid-state drive to enter the lifespan extension mode.

[0139] The preset threshold can be, for example, 100%.

[0140] This embodiment achieves precise timing control and dynamic risk adaptation by adding a collaborative judgment mechanism based on the "lifespan consumption ratio threshold trigger": the lifespan extension mode is only activated when the lifespan consumption of the solid-state drive reaches the preset threshold and is in a safe operating environment. This fully releases the potential of the later lifespan while avoiding premature performance degradation and data risks in uncertain environments, significantly improving the controllability and engineering practicality of the solution.

[0141] In some embodiments, error correction information of the solid-state drive (SSD) can also be acquired in extended lifespan mode; the error correction capability of the SSD can be improved based on the bit error rate change trend in the error correction information. In some embodiments, the error correction capability of the SSD can be improved by adjusting the error correction strategy of the SSD.

[0142] In some embodiments, the criteria for identifying a storage block as a bad block can be relaxed in the lifespan extension mode. In some embodiments, the criteria for identifying a storage block as a bad block can be relaxed by adjusting the bad block management strategy of the solid-state drive.

[0143] In some embodiments, the reserved space of the solid-state drive (SSD) can also be configured as a writing area for garbage collection data in the extended lifespan mode. In some embodiments, the reserved space of the SSD can be configured as a writing area for garbage collection data by adjusting the garbage collection strategy of the SSD.

[0144] In some embodiments, during the lifespan extension mode, the write load of the solid-state drive (SSD) can be redirected from the available space of the SSD to the reserved space of the SSD. In some embodiments, the write load of the SSD can be redirected from the available space of the SSD to the reserved space of the SSD by adjusting the write scheduling policy of the SSD.

[0145] In some embodiments, the background scan frequency can be reduced in the lifespan extension mode, thereby reducing the power consumption of the solid-state drive (SSD) in idle state. In some embodiments, the background scan frequency can be reduced by adjusting the SSD's data refresh strategy.

[0146] In some embodiments, upon receiving a lifetime extension mode exit command, or upon detecting that the current power supply status and / or temperature status of the solid-state drive does not meet preset conditions, the solid-state drive may be controlled to exit the lifetime extension mode. Controlling the solid-state drive to exit the lifetime extension mode includes configuring the solid-state drive's data retention time parameter to a standard data retention time.

[0147] In some embodiments, controlling the solid-state drive to exit the lifespan extension mode further includes: reverting at least one of the solid-state drive's error correction strategy, bad block management strategy, garbage collection strategy, write scheduling strategy, and data refresh strategy to the configuration before entering the lifespan extension mode.

[0148] In some embodiments, after reducing the data retention time of the solid-state drive (SSD), the SSD's lifespan management and write management strategies can be adjusted in a coordinated manner.

[0149] In some embodiments, the coordinated lifetime management and write management strategies may include at least one of the following: write amplification control strategy; garbage collection strategy; data refresh strategy; error correction strategy.

[0150] In some embodiments, the coordinated adjustment of these strategies is to adapt to or serve reduced data retention requirements in order to maintain overall system reliability.

[0151] Figure 4 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0152] refer to Figure 4 To control a solid-state drive to enter a lifespan extension mode, the following steps may also be included.

[0153] Step S402: Obtain error correction information from the solid-state drive.

[0154] In some embodiments, error correction information may be a set of key status data used by the solid-state drive controller to monitor, diagnose and correct errors in stored data. For example, it may include real-time indicators such as the original bit error rate, the frequency of error correction engine intervention, the number of rereads and various error counts, which can reflect the current data reliability and charge retention capability degradation of the NAND flash memory cell.

[0155] In step S404, in response to the adjustment of the data retention strategy, the error correction strategy of the solid-state drive is adjusted in a coordinated manner based on the bit error rate change trend in the error correction information to improve the error correction capability of the solid-state drive.

[0156] In some embodiments, in response to adjustments to the data retention strategy, the error rate trend in the error correction information can be monitored in real time. For example, after reducing the data retention requirements, if the original bit error rate is detected to be rising or the bit error rate exceeds a certain threshold, the error correction strategy can be dynamically enhanced. This may include switching to an ECC (Error-Correcting Code) algorithm with stronger error correction capabilities, increasing the redundancy check strength, or reducing the decoding iteration threshold. This allows for a relaxation of the data retention duration while compensating for the temporary decrease in flash memory cell reliability by increasing the error correction tolerance, thereby ensuring the overall reliability of the data read and write process.

[0157] In some embodiments, in the lifespan extension mode, at least one of the following operations can be performed to improve the error correction capability in the solid-state drive: 1. Adjusting the maximum number of iterations of the verification decoding used for error correction in the solid-state drive from a first value to a second value; wherein the second value is greater than the first value; 2. Switching the error correction mode of the solid-state drive from hardware decoding mode to software decoding mode; 3. Increasing the length of the ECC check bits in the written data; 4. Performing secondary verification encoding on the written data through second-level error correction encoding, wherein the second-level error correction encoding is different from the first-level error correction encoding corresponding to the ECC check bits.

[0158] Adjusting the maximum number of iterations for error correction decoding in the SSD from a first value to a second value can refer to changing the maximum number of iterations for LDPC (Low-Density Parity-Check) decoding in the SSD from a first value to a second value. By adjusting the maximum number of iterations for parity decoding (such as LDPC decoding), the strength of data error correction can be controlled: increasing the number of iterations improves the ability to repair aging or corrupted data (reducing the read error rate), while decreasing the number of iterations reduces read latency (increasing speed).

[0159] LDPC decoding is a forward error correction (FEC) technique, which can be an algorithmic process used in digital communication and data storage systems to recover original data from signals that are interfered with by noise.

[0160] Hardware decoding involves directly reading the raw voltage data stored in the flash memory cells, simply classifying it as 0 or 1, and then decoding it. This method is extremely fast, but its error correction capability is weak.

[0161] In this approach, software decoding not only reads the final judgment value but also reads fine-grained information about the voltage state (such as the degree of voltage offset and probability distribution), providing the decoder with confidence (reliability information). This method has extremely strong error correction capabilities, but it has higher latency and requires more computational resources.

[0162] In some embodiments, when the solid-state drive fails to perform regular fast error correction (hardware decoding) due to particle aging or interference, data that is about to be lost can be salvaged by reading more detailed voltage information and initiating high-intensity deep error correction (software decoding).

[0163] In some embodiments, ECC (Error Correction Code) is an encoding technique used to detect and correct data errors. ECC generates codewords that satisfy specific mathematical rules by appending extra check bits (redundant information) to the original data. When data is read or transmitted, the receiving end verifies the integrity of the data using the check bits. If the error is within the error correction capability of the algorithm, the system can automatically locate and correct the error without requesting retransmission.

[0164] In some embodiments, increasing the length of the ECC check bits in the data written to the solid-state drive (SSD) can improve the error correction capability of the error correction algorithm in the SSD, enabling it to detect and repair more and more serious bit errors, thereby ensuring data integrity and extending the lifespan of the storage medium.

[0165] In some embodiments, the second-level error correction coding can refer to an additional second layer of protection mechanism added after the data has been written through the first-level ECC check (first-level error correction coding), used to capture and correct residual errors that the first-level error correction coding failed to repair. The second-level error correction coding can be implemented in different ways depending on the application scenario and requirements, such as parity check codes, etc., and this application does not limit it in this regard.

[0166] Level 2 error correction coding can capture and correct residual errors that Level 1 error correction coding failed to fix. By leveraging the complementary advantages of different coding mechanisms, dual protection is built, thereby reducing the data error rate to an extremely low level.

[0167] Figure 5This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0168] refer to Figure 5 The above-mentioned solid-state drive control method for controlling the solid-state drive to enter the life extension mode may also include the following methods.

[0169] Step S502: In response to the adjustment of the data retention strategy, the bad block management strategy of the solid-state drive is adjusted accordingly; wherein, the adjustment of the bad block management strategy includes: relaxing the criteria for judging storage blocks as bad blocks based on the reduced data retention duration requirements, so as to reduce the consumption of the reserved space of the solid-state drive, thereby enabling the solid-state drive to obtain more available reserved space for garbage collection operations.

[0170] In some embodiments, in response to adjustments to the data retention strategy, the bad block management strategy can be optimized by relaxing the bad block determination criteria.

[0171] For example, by reducing the data retention time requirement, storage blocks can be marked as bad blocks only when there is a high original error rate or multiple rereads are required, instead of using the original strict judgment criteria. This reduces the consumption of over-provisioning (OP) space due to premature replacement of minor defective blocks, allowing background operations such as garbage collection (GC) to obtain more available over-provisioning space, thereby reducing write amplification and supporting stable operation in extended lifespan mode.

[0172] In lifetime extension mode, bad block determination parameters can be adjusted to relax the criteria for determining a storage block as a bad block. For example, bad block determination parameters can be adjusted in at least one of the following ways.

[0173] 1. Increase the bit error rate threshold used to determine whether a storage block is a bad block from a first preset value to a second preset value, wherein the second preset value is greater than the first preset value.

[0174] In some embodiments, a bit error rate threshold can be set for each storage block. When reading and writing data, the current bit error rate of the storage block is calculated in real time. If the bit error rate is lower than the bit error rate threshold, the block is determined to be healthy and can be used normally. If the bit error rate exceeds the bit error rate threshold, it is marked as an unreliable bad block and isolated, thereby ensuring that the data is always stored in a stable medium and preventing data loss due to medium wear or interference.

[0175] The bit error rate threshold used to determine whether a storage block is a bad block is increased from a first preset value to a second preset value. By relaxing the stringency of bad block determination, the number of discarded storage blocks is reduced, thereby delaying capacity depletion or assessing the ultimate lifespan of flash memory.

[0176] 2. Increase the cumulative bit error rate threshold used to determine whether a storage block is a bad block from the first threshold to the second threshold, where the second threshold is greater than the first threshold.

[0177] The cumulative bit error rate threshold can refer to the upper limit allowed for the proportion of cumulative error bits to the total amount of data written over the entire lifecycle of a storage block.

[0178] 3. Extend the health status scan cycle of the storage block from the first cycle value to the second cycle value, where the second cycle value is greater than the first cycle value.

[0179] The health status scan cycle refers to the time interval at which the solid-state drive (SSD) periodically performs inspection tasks in the background to check the health status of each storage block.

[0180] This embodiment adjusts the response data retention strategy and relaxes the judgment conditions of the bad block management strategy, allowing storage blocks to continue to serve at a higher bit error rate. This reduces the premature consumption of reserved space, provides more space resources for background maintenance operations such as garbage collection, effectively reduces the write amplification effect, and provides key space guarantee for the stable and efficient operation of solid-state drives in life extension mode.

[0181] This embodiment can also build a dual reliability guarantee while relaxing data retention requirements by coordinating and optimizing error correction and bad block management strategies: the dynamic enhancement of error correction strategies (such as adopting stronger ECC) directly compensates for the increased instantaneous error rate due to the extended lifespan, while the relaxation of bad block management strategies reduces the loss of reserved space caused by conservative replacement. The two work together to significantly extend the lifespan of the solid-state drive, while ensuring the data reliability and operational stability of the system under higher wear conditions by improving error correction tolerance and optimizing space utilization.

[0182] Figure 6 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0183] refer to Figure 6 The above-mentioned method for controlling a solid-state drive to enter a lifespan extension mode may also include:

[0184] Step S602: In response to the adjustment of the data retention strategy, the garbage collection strategy of the solid-state drive is adjusted accordingly; wherein the adjusted garbage collection strategy includes at least the following: during the garbage collection operation, the valid data that has been moved out is preferentially written to the reserved space of the solid-state drive.

[0185] In some embodiments, in response to adjustments in the data retention strategy, the system optimizes the garbage collection (GC) strategy by prioritizing the writing of the moved-out valid data to the reserved space (Over-Provisioning, OP) of the solid-state drive, rather than the user-available space. This reduces repeated writes to worn-out user data areas, lowers the Write Amplification Factor (WAF), and utilizes the relatively good storage cell state of the reserved space to ensure the efficiency and reliability of the garbage collection process, providing support for continuous and stable operation in the extended lifespan mode.

[0186] This step optimizes the garbage collection (GC) strategy by prioritizing the writing of valid data to the reserved space (OP) during data migration. This reduces repeated write operations to the already worn user data area, effectively lowering the global write amplification factor (WAF). At the same time, it leverages the advantage of the relatively intact storage units in the reserved space to ensure the efficiency and data reliability of the garbage collection process in the lifetime extension mode. This provides crucial support for the long-term stable operation of solid-state drives after data retention requirements are relaxed.

[0187] Figure 7 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0188] refer to Figure 7 The method described above for controlling a solid-state drive to enter a lifespan extension mode may include the following steps.

[0189] Step S702: In response to the adjustment of the data retention strategy, the write scheduling strategy of the solid-state drive is adjusted accordingly; wherein, the adjusted write scheduling strategy includes at least: redirecting the write load of the solid-state drive from the available space of the solid-state drive to the reserved space of the solid-state drive.

[0190] In some embodiments, in response to adjustments to the data retention strategy, the system modifies the write scheduling strategy to dynamically redirect write requests (write load) issued by the host from the user-available space with high wear and tear to the reserved space with relatively low wear and better health, thereby changing the initial storage location of the data and directly reducing the wear pressure on the main data area.

[0191] The above embodiments adjust the use of "fresh" storage units with reserved space to take on new write loads, effectively slowing down the wear rate of NAND flash memory units in the user data area, reducing their average number of erase and write cycles, and providing the solid-state drive with a longer reliable operating time in life extension mode. At the same time, the overall media utilization is improved by optimizing the write distribution.

[0192] Figure 8 This is a flowchart illustrating a method for controlling a solid-state drive to enter a lifespan extension mode according to an exemplary embodiment.

[0193] refer to Figure 8 The method described above for controlling a solid-state drive to enter a lifespan extension mode may include the following steps.

[0194] Step S802: In response to the adjustment of the data retention strategy, the data refresh strategy of the solid-state drive is adjusted accordingly; wherein the adjustment of the data refresh strategy includes: reducing or pausing the periodic data refresh operation of the solid-state drive.

[0195] In some embodiments, in response to adjustments to the data retention strategy, the system can reduce background read-verify-rewrite operations on stored data by decreasing the trigger frequency of data refresh operations or directly pausing periodic full-disk refresh tasks, thereby significantly reducing the additional write load generated by maintaining high data retention capabilities.

[0196] The aforementioned adjustment directly reduces the background write overhead required to maintain data charge, significantly lowering the resulting Write Amplification Factor (WAF). This allows the saved erase cycles to be used to handle more user data writes, thus directly translating into an extension of the effective lifespan of the solid-state drive without affecting data reliability under continuous power supply conditions.

[0197] Figure 9 This is a flowchart illustrating a method for extending the lifespan of a solid-state drive according to an exemplary embodiment.

[0198] refer to Figure 9 The above-mentioned method for extending the lifespan of solid-state drives may include the following steps.

[0199] Step S902: Based on real-time operating environment information, determine that the solid-state drive has left the safe operating environment.

[0200] In some embodiments, by continuously monitoring the real-time operating environment information of the solid-state drive (such as whether the power supply is interrupted or whether the temperature exceeds the preset safe range), it can be determined that the drive no longer meets the previously set "safe operating environment" conditions (such as an abnormal power outage or excessive temperature), thereby identifying that the current operating state has switched from a controlled and stable data center environment to a risky uncontrolled state.

[0201] Step S904: Control the solid-state drive to exit the lifespan extension mode; wherein, controlling the solid-state drive to exit the lifespan extension mode includes: reverting the data retention policy to the standard data retention policy, so that the data retention duration required by the solid-state drive is restored to the standard data retention duration.

[0202] In some embodiments, when the solid-state drive is detected to have left the safe operating environment, an exit mechanism is automatically triggered, restoring the data retention strategy that was previously dynamically relaxed to extend its lifespan to the original conservative strategy that meets general reliability design standards. This brings the data retention time that the solid-state drive must guarantee back to the standard requirement of several months, thereby ensuring the long-term security and integrity of data in uncontrolled or abnormal environments.

[0203] In some embodiments, controlling the solid-state drive to exit the lifespan extension mode may further include the following steps: in response to the rollback of the data retention policy, at least one of the solid-state drive's error correction policy, bad block management policy, garbage collection policy, write scheduling policy and data refresh policy is rolled back to a configuration adapted to the standard data retention policy.

[0204] In some embodiments, when a power supply anomaly is detected or the operating temperature exceeds the safe temperature range, the life management strategy is automatically restored to the standard design retention period.

[0205] This embodiment provides an adaptive rollback mechanism that can automatically exit the lifespan extension mode when the solid-state drive's operating environment deteriorates (such as power failure or overheating). It not only restores the core data retention strategy to a conservative standard, but also coordinates a series of optimization strategies such as rollback error correction, bad block management, garbage collection, write scheduling, and data refresh. This allows for the immediate reconstruction of comprehensive reliability protection when environmental risks occur, ensuring data security and achieving a dynamic balance between lifespan extension and system reliability.

[0206] This application also proposes a method for extending the lifespan of enterprise-grade NVMe SSDs (a type of solid-state drive) suitable for data center environments.

[0207] The above methods for extending the lifespan of enterprise-grade NVMe SSDs can be based on the following understanding: In IDC (Internet Data Center) scenarios with long-term stable power supply and controllable temperature, data retention during extreme long-term power outages is not a necessary constraint; the data retention capability of NAND Flash decreases exponentially with the number of erase / write cycles; appropriately reducing the data retention time requirement can significantly increase the available number of erase / write cycles of NAND Flash.

[0208] Based on the above understanding, by dynamically adjusting the data retention strategy during the SSD lifespan management process and coordinating and optimizing the write management and error control mechanisms, the lifespan of SSDs can be significantly extended.

[0209] In some embodiments, the above-described lifespan extension method may be executed by the NVMe SSD controller, or by the host system where the NVMe SSD resides in collaboration with the NVMe SSD controller.

[0210] In some embodiments, the controlled data center operating environment involved in this embodiment may include application scenarios where servers operate continuously for a long time and have data redundancy or data recovery mechanisms.

[0211] In some embodiments, the above-described method for extending the lifespan of enterprise-grade NVMe SSDs may include the following steps.

[0212] Step S1: Determine the operating environment.

[0213] The system detects the power supply and temperature status of the NVMe SSD's operating environment. When the SSD is continuously powered and its operating temperature is within a preset safe range, it is determined to be a controlled data center operating environment.

[0214] Step S2: Obtain lifetime status.

[0215] Obtain NVMe SSD lifespan-related parameters, including NAND Flash write / erase cycles, lifespan consumption rate, error correction information, and data retention margin.

[0216] Step S3: Dynamically adjust the data retention strategy.

[0217] In a controlled data center operating environment, the target data retention time is dynamically adjusted from the standard design value to a range of several days to several weeks, depending on the current lifespan of the SSD.

[0218] Step S4: Write and lifespan management co-control.

[0219] Based on the adjusted data retention strategy, write scheduling, garbage collection, data refresh, and error correction strategies are optimized in a coordinated manner.

[0220] Step S5: Abnormal rollback mechanism.

[0221] When a power supply abnormality or temperature exceeding the safe range is detected, the system automatically reverts to the standard data retention policy.

[0222] The above method extends the actual lifespan of NVMe SSDs in large-scale data center environments, thereby reducing the frequency of SSD replacements and lowering hardware procurement and maintenance costs.

[0223] In a data center environment with a constant temperature of 25 degrees Celsius and continuous power supply, the data retention capability of an enterprise-grade NVMe SSD at the end of its original design life (100% lifespan consumption) is about 3 months. If the target data retention time is adjusted to 7 days, based on the exponential relationship between the number of NAND Flash erase / write cycles and the data retention time, the theoretical available number of erase / write cycles of the SSD can be increased to about 230% of the original design value.

[0224] Even after taking into account engineering factors such as increased error rates and controller protection strategies, the actual achievable lifespan improvement can still reach a level significantly higher than the original design lifespan, which is equivalent to nearly doubling the effective lifespan of a single SSD.

[0225] In large-scale data center scenarios, enterprise-grade NVMe SSDs are typically deployed and replaced in batches on an annual basis. The method proposed in this application significantly extends the lifespan of a single SSD without increasing hardware costs, thereby reducing the frequency of SSD procurement and replacement.

[0226] Even after taking into account the increased failure rate and redundant operation and maintenance costs, it is still possible to achieve savings of billions of yuan in hardware procurement and operation and maintenance costs annually within the overall scale of the data center, which has significant economic value and industrial application prospects.

[0227] In some embodiments, this application proposes a method for significantly extending the actual lifespan of enterprise-grade NVMe SSDs without changing the physical process of NAND Flash by dynamically reducing data retention time requirements and coordinating write and lifespan management strategies for data center environments with long-term stable power supply and controllable temperature, in order to meet data center environments with long-term stable power supply and controllable temperature.

[0228] Below, this application will explain and illustrate the above-described method for extending the actual lifespan of enterprise-grade NVMe SSDs with reference to specific embodiments.

[0229] Example 1: Method for extending the lifespan of a single enterprise-grade NVMe SSD.

[0230] This embodiment uses a single enterprise-grade NVMe SSD deployed in a data center server as an example to illustrate the specific implementation process of the method in this application.

[0231] The NVMe SSD is installed inside the server, which is deployed in a data center with a stable power supply. The server operates continuously 24 / 7, and the ambient temperature is consistently maintained at approximately 25 degrees Celsius.

[0232] During server operation, the SSD controller or host system periodically acquires the NVMe SSD's operating status information, including power supply status, current operating temperature, and NAND Flash lifespan consumption percentage. When the SSD is detected to be continuously powered and its operating temperature is within a preset safe range, it is determined to be operating in a controlled data center environment.

[0233] Subsequently, the current lifespan status parameters of the NVMe SSD are obtained. When it is detected that the SSD's lifespan consumption ratio is gradually approaching the end of its rated lifespan, based on the exponential decay relationship between the number of NAND Flash erase / write cycles and the data retention time, the target data retention time of the SSD is dynamically adjusted from the originally designed approximately three months to approximately seven days.

[0234] After adjusting the data retention time, the SSD write management strategy is adjusted in tandem, including reducing the data refresh frequency, optimizing garbage collection scheduling, and adjusting the error correction strategy to adapt to the new data retention target.

[0235] Using the above method, without changing the SSD hardware structure and NAND Flash process, the theoretical number of erase / write cycles of the NVMe SSD under 25 degrees Celsius conditions is increased to about 230% of the original design value, thereby significantly extending its actual lifespan.

[0236] Example 2: Methods for extending the lifespan of server-grade or data center-grade NVMe SSD clusters.

[0237] This embodiment uses multiple enterprise-grade NVMe SSDs deployed in a data center server cluster as an example to illustrate the implementation of the method of this application in a large-scale application scenario.

[0238] In this embodiment, multiple servers form a server cluster, each server is equipped with at least one enterprise-grade NVMe SSD, and the server cluster is deployed in a data center with redundant power supply and environmental control capabilities. The server cluster as a whole has data redundancy, data backup, or distributed storage mechanisms.

[0239] The system uses a centralized management system or a distributed management module to uniformly monitor the operating status and lifespan of each NVMe SSD in the server cluster. When the server cluster is detected to be under a long-term stable power supply and the ambient temperature is within a safe range, an environment-aware data retention policy adjustment mode is uniformly enabled for all NVMe SSDs in the cluster.

[0240] In this mode, the target data retention time of each NVMe SSD is dynamically reduced in stages based on the percentage of its lifespan consumed, and the corresponding write scheduling, garbage collection, and error management strategies are adjusted accordingly. For SSDs with lower lifespan consumption, a higher data retention target can be maintained; for SSDs with higher lifespan consumption, the data retention time requirement is further reduced to fully release their remaining write / erase potential.

[0241] When the server cluster detects abnormal power supply events, abnormal temperatures, or changes in system operating modes, it automatically triggers a rollback mechanism to restore the relevant NVMe SSDs to the standard data retention policy, thereby ensuring the overall data security of the system.

[0242] By implementing the method described in this application on a server cluster or data center scale, the effective lifespan of a single NVMe SSD can be significantly extended, reducing the overall SSD replacement frequency. Under large-scale deployment conditions, even considering a certain increase in failure rate and operational redundancy costs, savings in hardware procurement and operational costs can still reach billions of yuan annually.

[0243] In summary, this application introduces a dynamic adjustment mechanism for data retention strategy based on operating environment awareness, which increases the theoretical number of erase / write cycles of enterprise-grade NVMe SSDs to approximately 230% of the original design value without changing the physical structure and manufacturing process of NAND Flash. Even after considering the factors that increase the failure rate, it can still achieve a practical engineering effect of nearly doubling the lifespan.

[0244] This application fully considers the potential increase in failure rate of NAND Flash during the high-cycle erase / write phase in the process of extending its lifespan.

[0245] Specifically: As the number of erase / write cycles increases, the cell charge retention capability decreases, leading to an increase in the original error rate; this application reduces the data retention time requirement, so that errors are mainly manifested as data decay in long-term power outage scenarios, while in continuous power supply environments, they can be corrected through normal read / write refresh mechanisms; by coordinating and adjusting error correction, write management, and data refresh strategies, the failure risk can be controlled within an acceptable range for the data center; when power supply abnormalities, temperature abnormalities, or an abnormal increase in the error rate are detected, a rollback mechanism is automatically triggered to restore the standard data retention strategy.

[0246] Therefore, this application does not unconditionally extend the service life, but rather achieves a balanced optimization of service life and reliability within a controllable environment and within a controllable risk range.

[0247] It should be particularly noted that the steps in the various embodiments of the above-described solid-state drive control method can be interchanged, substituted, added, or deleted. Therefore, these reasonable permutations and combinations of solid-state drive control methods should also fall within the protection scope of this disclosure, and the protection scope of this disclosure should not be limited to the embodiments.

[0248] It should be noted that the scope of protection of this application should include, but is not limited to, the specific implementation methods described in the embodiments. Any alternative solution that uses a different name but substantially performs the same function and achieves the same technical effect falls within the scope of protection defined by the claims of this application.

[0249] Based on the same inventive concept, this disclosure also provides a solid-state drive control device, as shown in the following embodiments. Since the principle by which this device embodiment solves the problem is similar to that of the above-described method embodiments, the implementation of this device embodiment can refer to the implementation of the above-described method embodiments, and repeated details will not be elaborated further.

[0250] Figure 10 This is a block diagram illustrating a solid-state drive control device according to an exemplary embodiment. (Refer to...) Figure 10 The solid-state drive control device 1000 provided in this embodiment may include: a detection module 1001 and a lifespan extension control module 1002.

[0251] The detection module 1001 can be used to receive a mode switching command, or to detect that the current power supply status and / or temperature status of the solid-state drive meets preset conditions; the lifespan extension control module 1002 can be used to switch the working mode of the solid-state drive to the lifespan extension mode; in the lifespan extension mode, the data retention time parameter of the solid-state drive is configured to a preset value lower than the standard data retention time.

[0252] In some embodiments, the solid-state drive control device 1000 may further include a second detection module.

[0253] The second detection module can be used to detect when the lifespan consumption ratio of the solid-state drive is greater than a preset threshold and the current power supply status and / or temperature status of the solid-state drive meet preset conditions, and control the solid-state drive to enter the lifespan extension mode.

[0254] In some embodiments, the solid-state drive control device 1000 may further include: an error correction information acquisition module and an error correction capability adjustment module.

[0255] Among them, the error correction information acquisition module can be used to acquire error correction information of the solid-state drive in the lifespan extension mode; the error correction capability adjustment module can be used to improve the error correction capability of the solid-state drive based on the bit error rate change trend in the error correction information.

[0256] In some embodiments, the solid-state drive controller 1000 may further include a module for relaxing the bad block judgment criteria.

[0257] The module for relaxing the criteria for identifying bad blocks can be used in extended lifespan mode to relax the criteria for identifying storage blocks as bad blocks.

[0258] In some embodiments, the solid-state drive controller 1000 may further include a reserved space configuration module.

[0259] The reserved space configuration module can be used to configure the reserved space of the solid-state drive as the writing area for garbage collection data in the life extension mode.

[0260] In some embodiments, the solid-state drive controller 1000 may further include a redirection module.

[0261] The redirection module can be used in extended lifespan mode to redirect the write load of the solid-state drive (SSD) from the available space of the SSD to the reserved space of the SSD.

[0262] In some embodiments, the solid-state drive controller 1000 may further include a scan frequency adjustment module.

[0263] The scan frequency adjustment module can be used to reduce the background scan frequency in the lifespan extension mode, thereby reducing the power consumption of the solid-state drive in the idle state.

[0264] In some embodiments, the solid-state drive control device 1000 may further include: a mode exit determination module and a mode exit module.

[0265] The mode exit determination module can be used to receive a lifespan extension mode exit command, or to detect that the current power supply status and / or temperature status of the solid-state drive does not meet preset conditions; the mode exit module can be used to control the solid-state drive to exit the lifespan extension mode; wherein, controlling the solid-state drive to exit the lifespan extension mode includes: configuring the solid-state drive's data retention time parameter to the standard data retention time.

[0266] In some embodiments, controlling the solid-state drive to exit the lifespan extension mode further includes: reverting at least one of the solid-state drive's error correction strategy, bad block management strategy, garbage collection strategy, write scheduling strategy, and data refresh strategy to the configuration before entering the lifespan extension mode.

[0267] Since the functions of the device 1000 have been described in detail in their corresponding method embodiments, they will not be repeated here.

[0268] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present disclosure. In this regard, each block in a flowchart or block diagram may represent a portion of a module or program segment containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram or flowchart, and combinations of blocks in a block diagram or flowchart, may be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer program instructions.

[0269] Furthermore, the above figures are merely illustrative of the processes included in the method according to exemplary embodiments of this disclosure and are not intended to be limiting. It is readily understood that the processes shown in the above figures do not indicate or limit the temporal order of these processes. Additionally, it is readily understood that these processes may be executed synchronously or asynchronously, for example, in multiple modules.

[0270] Figure 11 A schematic diagram of an electronic device suitable for implementing embodiments of the present disclosure is shown. It should be noted that... Figure 11 The illustrated electronic device 1100 is merely an example and should not impose any limitation on the functionality and scope of use of the embodiments disclosed herein.

[0271] like Figure 11 As shown, the electronic device 1100 includes a central processing unit (CPU) 1101, which can perform various appropriate actions and processes according to a program stored in a read-only memory (ROM) 1102 or a program loaded from a storage section 1108 into a random access memory (RAM) 1103. The RAM 1103 also stores various programs and data required for the operation of the electronic device 1100. The CPU 1101, ROM 1102, and RAM 1103 are interconnected via a bus 1104. An input / output (I / O) interface 1105 is also connected to the bus 1104.

[0272] The following components are connected to I / O interface 1105: an input section 1106 including a keyboard, mouse, etc.; an output section 1107 including a cathode ray tube (CRT), liquid crystal display (LCD), etc., and speakers, etc.; a storage section 1108 including a hard disk, etc.; and a communication section 1109 including a network interface card such as a LAN card, modem, etc. The communication section 1109 performs communication processing via a network such as the Internet. A drive 1110 is also connected to I / O interface 1105 as needed. Removable media 1111, such as a disk, optical disk, magneto-optical disk, semiconductor memory, etc., are installed on drive 1110 as needed so that computer programs read from them can be installed into storage section 1108 as needed.

[0273] In particular, according to embodiments of this disclosure, the processes described above with reference to the flowcharts can be implemented as computer software programs. For example, embodiments of this disclosure include a computer program product comprising a computer program carried on a computer-readable storage medium, the computer program containing computer program instructions for performing the methods shown in the flowcharts. In such embodiments, the computer program can be downloaded and installed from a network via communication section 1109, and / or installed from removable medium 1111. When the computer program is executed by central processing unit (CPU) 1101, it performs the functions defined above in the system of this disclosure.

[0274] It should be noted that the computer-readable storage medium disclosed herein may be a computer-readable signal medium or a computer-readable storage medium, or any combination thereof. A computer-readable storage medium may be, for example,—but not limited to—an electrical, magnetic, optical, electromagnetic, infrared, or semiconductor system, apparatus, or device, or any combination thereof. More specific examples of a computer-readable storage medium may include, but are not limited to: an electrical connection having one or more wires, a portable computer disk, a hard disk, random access memory (RAM), read-only memory (ROM), erasable programmable read-only memory (EPROM or flash memory), optical fiber, portable compact disk read-only memory (CD-ROM), optical storage device, magnetic storage device, or any suitable combination thereof. In this disclosure, a computer-readable storage medium may be any tangible medium containing or storing a program that can be used by or in conjunction with an instruction execution system, apparatus, or device. In this disclosure, a computer-readable signal medium may include a data signal propagated in baseband or as part of a carrier wave, carrying computer-readable computer program instructions. Such propagated data signals may take various forms, including but not limited to electromagnetic signals, optical signals, or any suitable combination thereof. Computer-readable signal media can also be any computer-readable storage medium other than a computer-readable storage medium, which can send, propagate, or transmit a program for use by or in connection with an instruction execution system, apparatus, or device. Computer program instructions contained on a computer-readable storage medium can be transmitted using any suitable medium, including but not limited to: wireless, wire, optical fiber, RF, etc., or any suitable combination thereof.

[0275] In another aspect, this disclosure also provides a computer-readable storage medium, which may be included in the device described in the above embodiments; or it may exist independently and not assembled into the device. The computer-readable storage medium carries one or more programs that, when executed by the device, enable the device to perform the following functions: receiving a mode switching command, or detecting that the current power supply state and / or temperature state of the solid-state drive meets preset conditions; switching the operating mode of the solid-state drive to a lifespan extension mode; and in the lifespan extension mode, configuring the data retention time parameter of the solid-state drive to a preset value lower than the standard data retention time.

[0276] According to one aspect of this disclosure, a computer program product or computer program is provided, comprising computer program instructions stored in a computer-readable storage medium. The computer program instructions are read from the computer-readable storage medium, and a processor executes the computer program instructions to implement the methods provided in various optional implementations of the above embodiments.

[0277] From the above description of the embodiments, those skilled in the art will readily understand that the exemplary embodiments described herein can be implemented by software or by combining software with necessary hardware. Therefore, the technical solutions of the embodiments of this disclosure can be embodied in the form of a software product, which can be stored in a non-volatile storage medium (such as a CD-ROM, USB flash drive, or portable hard drive) and includes several computer program instructions to cause an electronic device (such as a server or terminal device) to execute the method according to the embodiments of this disclosure.

[0278] Other embodiments of this disclosure will readily occur to those skilled in the art upon consideration of the specification and practice disclosed herein. This disclosure is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not disclosed herein. The specification and examples are to be considered exemplary only, and the true scope and spirit of this disclosure are indicated by the claims.

[0279] It should be understood that this disclosure is not limited to the detailed structures, drawing arrangements or implementations shown herein; rather, this disclosure is intended to cover various modifications and equivalent arrangements contained within the spirit and scope of the appended claims.

Claims

1. A solid-state drive control method, characterized in that, include: Upon receiving a mode switching command, or upon detecting that the lifespan consumption ratio of the solid-state drive is greater than a preset threshold, and the current power supply status and / or temperature status of the solid-state drive meet preset conditions; The solid-state drive (SSD) is switched to an extended lifespan mode; in the extended lifespan mode, the data retention time parameter of the SSD is configured to a preset value lower than the standard data retention time.

2. The method according to claim 1, characterized in that, The method further includes: In the lifespan extension mode, at least one of the following operations is performed: The maximum number of iterations for error correction decoding in the solid-state drive is adjusted from a first value to a second value; wherein the second value is greater than the first value. Switch the error correction mode of the solid-state drive from hardware decoding mode to software decoding mode; Increase the length of the ECC checksum bit in the written data; The written data is subjected to secondary verification encoding through a second-level error correction encoding, wherein the second-level error correction encoding is different from the first-level error correction encoding corresponding to the ECC check bit.

3. The method according to claim 1, characterized in that, The method further includes: In the extended lifespan mode, the bad block determination parameters are adjusted in at least one of the following ways: The bit error rate threshold used to determine whether a storage block is a bad block is increased from a first preset value to a second preset value, wherein the second preset value is greater than the first preset value; The cumulative bit error rate threshold used to determine whether a storage block is a bad block is increased from a first threshold to a second threshold, where the second threshold is greater than the first threshold; or... The health status scan cycle of the storage block is extended from the first cycle value to the second cycle value, where the second cycle value is greater than the first cycle value.

4. The method according to claim 1, characterized in that, The method further includes: In the extended lifespan mode, the reserved space of the solid-state drive is configured as a writing area for garbage collection data.

5. The method according to claim 1, characterized in that, The method further includes: In the lifespan extension mode, the write load of the solid-state drive (SSD) is redirected from the available space of the SSD to the reserved space of the SSD.

6. The method according to claim 1, characterized in that, The method further includes: In the lifespan extension mode, the background scan frequency is reduced, thereby reducing the power consumption of the solid-state drive in the idle state.

7. The method according to claim 1, characterized in that, The method further includes: If a command to exit the lifespan extension mode is received, or if the current power supply status and / or temperature status of the solid-state drive does not meet the preset conditions; Control the solid-state drive to exit the lifespan extension mode; The process of controlling the solid-state drive to exit the lifespan extension mode includes: The data retention time parameter of the solid-state drive is configured to the standard data retention time.

8. The method according to claim 7, characterized in that, Exiting the solid-state drive from the lifespan extension mode also includes: At least one of the error correction strategy, bad block management strategy, garbage collection strategy, write scheduling strategy, and data refresh strategy of the solid-state drive is rolled back to the configuration before entering the lifespan extension mode.

9. A computer program product comprising computer program instructions stored in a computer-readable storage medium, characterized in that, When the computer program instructions are executed by the processor, they implement the method according to any one of claims 1-8.

10. An electronic device, characterized in that, include: Memory and processor; The memory is used to store computer program instructions; the processor calls the computer program instructions stored in the memory to implement the solid-state drive control method as described in any one of claims 1-8.

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