A radio frequency antenna regulating device and method based on low-dimensional semiconductor material

Abstract

The application relates to the technical field of radio frequency antennas, in particular to a radio frequency antenna regulation and control device and method based on a low-dimensional semiconductor material, which comprises a flexible PCB substrate, a low-dimensional semiconductor radio frequency transistor arranged on the flexible PCB substrate, a dual-frequency antenna structure arranged on the flexible PCB substrate, the dual-frequency antenna structure comprising a fundamental frequency antenna and a harmonic antenna, a plurality of gold wire bonds, a gate terminal of the transistor being connected to the fundamental frequency antenna, and a source terminal being connected to a ground return circuit of the flexible PCB substrate, and an open-circuit matching branch arranged in the dual-frequency antenna structure, which is used for realizing impedance matching at a fundamental frequency point and a second harmonic frequency point. Through the above technical scheme, low-dimensional semiconductor radio frequency transistor and dual-frequency antenna are connected in a low-loss mode, high-frequency signal transmission stability is improved, the collaborative work of fundamental frequency signal receiving and second harmonic signal radiation is completed, the dual-frequency impedance matching effect is improved, parasitic parameters and signal reflection are reduced, and the device can reliably work under flexible deformation.

Description

Technical Field

[0001] This application relates to the field of radio frequency antenna technology, and in particular to a radio frequency antenna control device and method based on low-dimensional semiconductor materials. Background Technology

[0002] With the rapid evolution of the Internet of Things, precision sensing, and 6G mobile communication technologies, the demand for harmonic radar systems, due to their strong resistance to clutter interference, continues to rise in fields such as insect behavior tracking, flexible wearable devices, and miniature target positioning. These scenarios place multi-dimensional performance demands on the core component, harmonic modulation: it needs to be compatible with millimeter-wave frequencies to ensure signal transmission rates, while simultaneously meeting the comprehensive characteristics of lightweight design, mechanical flexibility, and high harmonic conversion efficiency. However, in existing high-frequency communication and ranging applications, traditional semiconductor devices and rigid packaging methods are insufficient to simultaneously meet these requirements. Therefore, a novel RF antenna modulation scheme that combines high-frequency nonlinear response, flexible attachment capability, and efficient harmonic radiation performance is urgently needed.

[0003] Existing harmonic antennas typically employ silicon-based or gallium arsenide (GaAs) RF transistors as nonlinear units, combined with rigid dielectric substrates to realize the antenna structure. In practice, the nonlinear devices and antennas are designed independently according to conventional single-frequency approaches, and interconnected via rigid circuit boards or air bridges, wire bonding, etc. However, this existing technology has the following drawbacks: First, silicon-based transistors have low carrier mobility and large parasitic capacitance, while GaAs transistors, although having higher mobility, are expensive and have complex manufacturing processes; both suffer from a significant decrease in harmonic conversion efficiency at high frequencies. Second, the rigid substrate results in poor mechanical flexibility, making it difficult to attach to curved surfaces and prone to failure under bending, limiting its application in wearable devices, insect tracking, and other scenarios. Third, existing solutions lack a coordinated design of radiating units and matching networks for second harmonics, resulting in weak second harmonic radiation and high out-of-band spurious coupling. Fourth, research on RF circuits based on low-dimensional semiconductor materials is still limited to rigid quartz substrates, failing to solve the problem of flexible integration. The aforementioned drawbacks collectively result in existing harmonic antennas exhibiting weak signal echo strength, short detection range, and poor adaptability when operating at high frequencies, making it difficult to meet the application requirements of future flexible, lightweight, and high-sensitivity harmonic radar systems. Summary of the Invention

[0004] In order to solve the problems of low harmonic conversion efficiency and poor flexibility at high frequencies, this application provides a radio frequency antenna control device and method based on low-dimensional semiconductor materials.

[0005] In a first aspect, this application provides a radio frequency antenna control device based on low-dimensional semiconductor materials, comprising: a flexible PCB substrate; The low-dimensional semiconductor radio frequency transistor is disposed on a flexible PCB substrate. The transistor includes a source, a drain, a gate, a low-dimensional semiconductor channel layer, and a dielectric layer located between the gate and the low-dimensional semiconductor channel layer. A dual-band antenna structure disposed on a flexible PCB substrate, the dual-band antenna structure includes a baseband antenna for receiving baseband signals and a harmonic antenna for radiating second harmonic signals; Multiple gold wire bonding wires connect the gate of the transistor to the feed point of the baseband antenna and the source terminal to the grounding loop of the flexible PCB substrate. At least one open-circuit matching stub is provided in the dual-band antenna structure, which is used to achieve impedance matching at the fundamental frequency and the second harmonic frequency.

[0006] In one specific implementation scheme, the dual-band antenna structure adopts a butterfly-shaped radiating arm topology, and the open-circuit matching stub includes a first open-circuit matching stub and a second open-circuit matching stub, which are used to tune the fundamental frequency signal and the second harmonic signal, respectively.

[0007] In one specific implementation, the source and drain are formed of aluminum metal and are in ohmic contact with the low-dimensional semiconductor channel layer; the gate is formed of nickel metal; and the dielectric layer is an aluminum oxide dielectric layer.

[0008] In one specific implementation, the device also includes a Bias-T network, a gate power input, and a drain power input integrated on a flexible PCB substrate. The Bias-T network is used to isolate radio frequency signals from DC bias signals.

[0009] In one specific implementation, the device also includes a ground via through the flexible PCB substrate to provide a low-impedance return path for high-frequency signals.

[0010] In one specific implementation, the baseband antenna operates at a frequency of 11 GHz, and the harmonic antenna operates at a frequency of 22 GHz.

[0011] In one specific implementation, the device has a return loss S11 of less than -10dB at both 11GHz and 22GHz frequencies, and a second harmonic radiation gain greater than 3dBi.

[0012] Secondly, this application also provides a method for controlling a radio frequency antenna based on low-dimensional semiconductor materials, comprising: A low-dimensional semiconductor radio frequency transistor and a dual-band antenna structure are set on a flexible PCB substrate. The dual-band antenna structure includes a baseband antenna and a harmonic antenna. The gate terminal of the transistor is connected to the baseband antenna through a gold wire bonding wire, and the drain terminal is connected to the harmonic antenna through a gold wire bonding wire. The baseband antenna receives externally input baseband radio frequency signals and transmits the baseband radio frequency signals to the gate of the transistor. The second harmonic signal of the fundamental frequency radio frequency signal is generated at the drain terminal of the low-dimensional semiconductor radio frequency transistor. The second harmonic signal is transmitted to the harmonic antenna through gold wire bonding, and then radiated outward by the harmonic antenna. Impedance matching is achieved at the fundamental frequency and the second harmonic frequency by setting at least one open-circuit matching stub in the dual-band antenna structure.

[0013] A third aspect of this application provides an electronic device, comprising: a processor and a memory; wherein the memory stores a computer program adapted to be loaded by the processor and to execute the above-described method steps.

[0014] A fourth aspect of this application provides a computer storage medium storing a plurality of instructions adapted for loading by a processor and executing the method steps described above. Attached Figure Description

[0015] Figure 1 This is a schematic diagram of a radio frequency antenna control device based on low-dimensional semiconductor materials provided in an embodiment of this application.

[0016] Figure 2 This is a partial structural schematic diagram of a low-dimensional semiconductor radio frequency transistor provided in an embodiment of this application.

[0017] Figure 3 This is a schematic flowchart of a radio frequency antenna modulation method based on low-dimensional semiconductor materials provided in an embodiment of this application. Detailed Implementation

[0018] The terminology used in the following embodiments of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification of this application, the singular expressions “a,” “an,” “the,” “the,” and “this” are intended to include the plural expressions as well, unless the context clearly indicates otherwise. It should also be understood that the term “and / or” as used in this application refers to any or all possible combinations including one or more of the listed items.

[0019] Hereinafter, the terms "first" and "second" are used for descriptive purposes only and should not be construed as implying or suggesting relative importance or implicitly indicating the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature, and in the description of the embodiments of this application, unless otherwise stated, "multiple" means two or more.

[0020] The technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments.

[0021] This embodiment provides a radio frequency antenna control device based on low-dimensional semiconductor materials. The device includes a flexible printed circuit board (PCB) substrate (not separately indicated by reference numerals in the figure). The flexible PCB substrate serves as the physical carrier of the entire radio frequency antenna control device, providing a stable mounting plane and signal routing carrier for all active devices and passive radio frequency structures.

[0022] In some embodiments, the flexible PCB substrate is made of a polymer material with high mechanical flexibility, low high-frequency dielectric loss and excellent thermal stability, and a hafnium oxide transition layer is provided on its surface.

[0023] Among them, the hafnium oxide transition layer can significantly enhance the interfacial bonding force between low-dimensional semiconductor materials and flexible PCB substrates and metal electrodes, and can effectively avoid interfacial peeling, electrode detachment and device performance degradation problems that occur during repeated bending, curved surface attachment or dynamic stress loading, thus greatly improving the mechanical reliability and long-term working stability of the device.

[0024] Please see Figures 1 to 2 The radio frequency antenna control device based on low-dimensional semiconductor materials provided in this application embodiment also includes a low-dimensional semiconductor radio frequency transistor 101 disposed on a flexible PCB substrate.

[0025] Transistor 101 is the core active device in the entire radio frequency antenna control device for nonlinear signal conversion. Transistor 101 includes a source 201, a drain 202, a gate 205, a low-dimensional semiconductor channel layer 203, and a dielectric layer 204 located between the gate 205 and the channel layer. The source 201, drain 202, and gate 205 together constitute the three-terminal electrode structure of transistor 101.

[0026] The channel layer 203 is the core channel for carrier transport and nonlinear response under the action of radio frequency signals. The dielectric layer 204 realizes reliable electrical isolation between the gate 205 and the channel layer 203. At the same time, the dielectric layer 204 ensures the gate 205's ability to efficiently regulate the electric field concentration of carriers in the channel.

[0027] Among them, the channel layer 203 is made of low-dimensional semiconductor material and serves as the core conductive channel of the radio frequency transistor. Its low-dimensional structure can effectively reduce carrier scattering and improve carrier mobility, providing a basis for high-frequency signal transmission and nonlinear effect generation.

[0028] This application provides a radio frequency antenna control device based on low-dimensional semiconductor materials, which also includes a dual-frequency antenna structure disposed on a flexible PCB substrate.

[0029] The dual-band antenna structure is the core passive component of the entire radio frequency antenna control device, which realizes radio frequency signal reception and harmonic signal radiation. The dual-band antenna structure includes a baseband antenna 104 for receiving external baseband radio frequency signals and a second harmonic antenna 105 for radiating outward second harmonic signals generated by nonlinear conversion. The baseband antenna 104 is responsible for capturing the externally incident baseband radio frequency signals and transmitting the baseband radio frequency signals to the gate terminal of the transistor 101. The second harmonic antenna 105 is responsible for radiating the second harmonic signals output by the transistor 101 outward in the form of electromagnetic waves.

[0030] The radio frequency antenna control device based on low-dimensional semiconductor materials provided in this application embodiment also includes multiple gold wire bonding wires 102.

[0031] The gold wire bonding wire 102 is the core connection structure for achieving low-loss electrical interconnection between the transistor 101 and surrounding RF circuits and grounding structures. The gold wire bonding wire 102 connects the gate terminal of the transistor 101 to the feed point of the baseband antenna 104, connects the drain terminal of the transistor 101 to the feed point of the second harmonic antenna 105, and connects the source terminal of the transistor 101 to the grounding terminal of the grounding loop of the flexible PCB substrate.

[0032] In some embodiments, the gold wire bonding wire 102 is made of gold wire material with high conductivity and high ductility. The gold wire bonding wire 102 achieves low-loss electrical connections while adapting to the flexible deformation characteristics of flexible PCB substrates. The gold wire bonding wire 102 avoids problems such as connection breakage and sudden changes in contact resistance that occur during bending, curling, or surface mounting of the device.

[0033] In some embodiments, the transistor 101 is fixed to the central region of the flexible PCB substrate in the form of a bare die, which can shorten the radio frequency signal transmission path between the transistor 101 and the dual-band antenna structure.

[0034] The radio frequency antenna control device based on low-dimensional semiconductor materials provided in this application embodiment further includes at least one open-circuit matching stub disposed in the dual-frequency antenna structure.

[0035] The open-circuit matching stub is the core passive matching structure for achieving impedance matching and resonant tuning of a dual-band antenna at the target operating frequency. It is used to achieve precise impedance matching and resonant tuning at the fundamental frequency and the second harmonic frequency. By adjusting its physical length, width, and placement, the open-circuit matching stub changes the input impedance characteristics of the corresponding RF signal transmission path, enabling the fundamental frequency antenna 104 and the second harmonic antenna 105 to achieve optimal impedance matching with the preceding and following circuits at the target operating frequency. This reduces RF signal reflection loss and improves the overall efficiency of signal transmission and radiation.

[0036] In some embodiments, the entire radio frequency antenna control device can be flexibly attached and can be stably attached to non-planar carrier surfaces such as the back of insects, the surface of fabrics, and the curved surface of wearable devices. The device can maintain stable electrical performance and harmonic control capability even under multiple bending, curling, or dynamic deformation conditions.

[0037] In some embodiments, the overall thickness of the flexible PCB substrate can be 10 micrometers.

[0038] Based on the above embodiments, as another optional embodiment, the dual-band antenna structure adopts a butterfly-shaped radiating arm topology.

[0039] The butterfly-shaped radiating arm topology adopts a left-right symmetrical double-arm radiating structure. The two symmetrical radiating arms correspond to the radiating elements of the baseband antenna 104 and the second harmonic antenna 105, respectively. The symmetrical butterfly topology can suppress the cross-polarization component in the antenna radiation process and improve the antenna's radiation stability, front-to-back ratio and gain performance.

[0040] The open-circuit matching stub includes a first open-circuit matching stub 106 and a second open-circuit matching stub 107. The first open-circuit matching stub 106 corresponds to the radio frequency signal transmission path setting of the baseband antenna 104, used for precise tuning of the input impedance and resonant frequency of the baseband signal; the second open-circuit matching stub 107 corresponds to the radio frequency signal transmission path setting of the second harmonic antenna 105, used for precise tuning of the input impedance and resonant frequency of the second harmonic signal.

[0041] Both the first open-circuit matching stub 106 and the second open-circuit matching stub 107 adopt a microstrip line structure with open-circuit termination, and both use the same microstrip line technology as the dual-band antenna structure. They are integrally formed on the surface of the flexible PCB substrate, eliminating the need for additional discrete components and soldering processes, which can reduce the size and assembly complexity of the device.

[0042] Technicians can precisely adjust the input impedance at the corresponding operating frequency by adjusting the length, width, and relative position of the first open-circuit matching stub 106 and the second open-circuit matching stub 107 to achieve the best impedance matching state at the target operating frequency.

[0043] Technicians can achieve synchronous resonance response between the fundamental frequency signal and the second harmonic signal by adjusting the overall length, opening angle and relative position of the butterfly radiating arm and the feed point. This eliminates the need to increase the area occupied by the matching circuit, enabling the miniaturization and lightweight design of the entire RF antenna control device.

[0044] Based on the above embodiments, as another optional embodiment, the source 201 and drain 202 of transistor 101 are formed of aluminum metal, and the source 201 and drain 202 form a stable ohmic contact with the channel layer 203.

[0045] Aluminum metal possesses excellent room temperature conductivity, low contact barrier with low-dimensional semiconductor materials, and good film formation characteristics. The source electrode 201 and drain electrode 202 made of aluminum metal can reduce the contact resistance between the electrode and the channel layer 203, realize efficient injection and extraction of high-frequency current, and reduce the transmission loss and heat loss of high-frequency signals at the electrode contact position.

[0046] The gate 205 of transistor 101 is formed of nickel metal with high work function. The high work function of nickel metal can reduce the reverse leakage current of gate 205, improve the control accuracy and efficiency of gate 205 on carrier concentration in channel layer 203, and realize precise linear control of transistor output current and harmonic output power.

[0047] The dielectric layer 204 of transistor 101 is an alumina dielectric layer. The alumina dielectric layer possesses a high relative permittivity, excellent insulation breakdown performance, and nanometer-scale thickness uniformity, enabling strong gate electric field modulation capability even at extremely thin thicknesses. Simultaneously, the alumina dielectric layer effectively isolates the gate 205 from the channel layer 203, preventing electrical breakdown and excessive leakage current between them, thus ensuring the device's operational stability under high-frequency, high-voltage bias.

[0048] The source electrode 201 and drain electrode 202, made of aluminum metal, are disposed on the two ends of the channel layer 203, and the gate electrode 205, made of nickel metal, is disposed on the upper surface of the aluminum oxide dielectric layer.

[0049] Technicians can adjust the free carrier concentration in the channel layer 203 by inputting the DC bias voltage through the gate 205, thereby changing the nonlinear conductivity characteristics of the transistor 101 and achieving precise control of the second harmonic output power to adapt to application scenarios with different ranging distances and different sensitivity requirements.

[0050] Based on the above embodiments, as another optional embodiment, the radio frequency antenna control device further includes a bias T-type (Bias-T Network, Bias-T) network 108, a gate power input terminal 109, and a drain power input terminal 110 integrated on a flexible PCB substrate.

[0051] The Bias-T network 108 is the core circuit structure for separating the DC bias power supply and the RF signal transmission path. The DC input of the Bias-T network 108 is connected to the gate power input 109 and the drain power input 110, respectively, while the RF output is connected to the gate 205 and the drain 202 of the transistor 101, respectively. The Bias-T network 108 is used to achieve reliable isolation and decoupling between the RF signal and the DC bias signal.

[0052] In some embodiments, the Bias-T network 108 is integrated on the surface of a flexible PCB substrate, eliminating the need for additional soldering of discrete surface mount devices. This reduces the assembly complexity, size, and parasitic parameters of the device, while improving its flexibility and structural reliability.

[0053] The gate power input terminal 109 provides a continuously adjustable DC gate voltage to the gate 205 of the transistor 101. Technicians can change the operating point of the transistor 101 by adjusting the input voltage of the gate power input terminal 109 to adapt to different nonlinear conversion requirements.

[0054] The drain power input terminal 110 provides a fixed DC drain voltage to the drain 202 of transistor 101, providing a stable bias electric field for the transport of high-frequency carriers.

[0055] The gate power input terminal 109 and the drain power input terminal 110 work together to achieve precise setting of the operating point of transistor 101, ensuring that the transistor always operates in the operating range with the best nonlinear characteristics, and achieving the highest conversion efficiency from fundamental frequency signal to second harmonic signal.

[0056] Based on the above embodiments, as another optional embodiment, the radio frequency antenna control device further includes multiple sets of grounding vias 103 penetrating the flexible PCB substrate.

[0057] The grounding via 103 connects the bottom ground layer and the surface circuit structure of the flexible PCB substrate, providing a continuous low-impedance return path for high-frequency radio frequency signals.

[0058] Multiple sets of grounding vias 103 are respectively disposed around the source 201 of transistor 101, around the grounding terminals of baseband antenna 104 and second harmonic antenna 105, and around the grounding terminal of Bias-T network 108. These are used to shorten the grounding return path of high-frequency radio frequency signals, reduce the parasitic inductance and series resistance of the grounding loop, reduce the grounding loss and electromagnetic crosstalk of high-frequency signals, and improve the performance stability and anti-interference capability of the device under high-frequency operating conditions.

[0059] In some embodiments, the device further includes a power ground via 111. The power ground via 111 connects the ground terminals of the gate power input terminal 109 and the drain power input terminal 110 to the bottom ground layer, providing a stable ground reference for the DC power supply circuit.

[0060] In some embodiments, the multiple sets of grounding vias 103 are arranged in an array with equal spacing. The array arrangement can further reduce the overall grounding impedance, suppress signal resonance, crosstalk and radiation interference caused by the high-frequency grounding loop, and ensure the consistency of the grounding performance of the device in the 11 GHz and 22 GHz high-frequency bands.

[0061] Based on the above embodiments, as another optional embodiment, the baseband antenna 104 operates at a frequency of 11 GHz, and the second harmonic antenna 105 operates at a frequency of 22 GHz.

[0062] The 11 GHz fundamental frequency and the 22 GHz second harmonic frequency are strictly integer multiples of each other. This frequency combination utilizes the intrinsic nonlinearity of transistor 101 to achieve efficient conversion from the fundamental frequency signal to the second harmonic signal. At the same time, it can adapt to the working requirements of dual-band harmonic ranging systems, avoid co-frequency interference and out-of-band spurious coupling between the fundamental frequency signal and the harmonic signal, and improve the anti-clutter interference capability and ranging sensitivity of the harmonic ranging system.

[0063] The overall length of the butterfly-shaped radiating arm of the baseband antenna 104 is precisely designed according to the dielectric wavelength in the flexible PCB substrate corresponding to the 11 GHz frequency point, and the overall length of the butterfly-shaped radiating arm of the second harmonic antenna 105 is precisely designed according to the dielectric wavelength in the flexible PCB substrate corresponding to the 22 GHz frequency point, so that the two antennas achieve radiation efficiency and impedance matching at their respective target operating frequencies.

[0064] The microstrip line transmission path of the dual-frequency antenna structure is jointly and collaboratively designed based on the dual-frequency characteristics of 11 GHz and 22 GHz. This design can simultaneously take into account the transmission loss, impedance consistency and phase stability of the two operating frequencies, avoiding the performance degradation of the other frequency caused by optimizing a single frequency.

[0065] The operating frequency of this embodiment can be flexibly adjusted according to the needs of actual application scenarios. By changing the length of the butterfly-shaped radiating arm, the opening angle, and the size of the first open-circuit matching stub 106 and the second open-circuit matching stub 107, technicians can adapt different fundamental frequency points and corresponding second harmonic frequency points.

[0066] Based on the above embodiments, as another optional embodiment, the return loss S11 of the radio frequency antenna control device at the target operating frequencies of 11 GHz and 22 GHz is less than -10 dB, and the second harmonic radiation gain is greater than 3 dB per solid angle.

[0067] The return loss S11 is used to characterize the impedance matching degree between the antenna and the transmission lines before and after the stage. A return loss S11 of less than -10 dB indicates that the reflected power of the antenna at the corresponding operating frequency is less than one-tenth of the incident power. Most of the radio frequency signal can be effectively received or radiated outward by the antenna, which can reduce the reflection loss of radio frequency signal and improve the energy utilization and harmonic conversion efficiency of the entire device.

[0068] The second harmonic radiation gain is used to characterize the ability of the second harmonic antenna 105 to radiate the second harmonic signal in a specified direction. A second harmonic radiation gain greater than 3 dB per unit solid angle can improve the effective radiation distance of the second harmonic signal and the signal sensitivity of the receiver, making it suitable for application scenarios with extremely high requirements for signal sensitivity, such as long-range harmonic ranging, low-power passive radar and long-range insect tracking.

[0069] Even after repeated bending, curling, or surface-mounting deformation, the radio frequency antenna control device can still maintain a return loss S11 of less than -10 dB at the target operating frequencies of 11 GHz and 22 GHz. After bending, the device can still maintain stable electrical performance and harmonic control capability.

[0070] The radio frequency antenna control device achieves high conversion efficiency from fundamental frequency signal to second harmonic signal by synergistically optimizing the intrinsic strong nonlinearity of transistor 101 and the dual-frequency resonance characteristics of dual-frequency antenna structure. Compared with traditional silicon-based or gallium arsenide-based harmonic antenna solutions, it has higher harmonic output power and energy utilization, which can effectively improve the ranging resolution of the harmonic ranging system.

[0071] Based on the above embodiments, as another optional embodiment, this application also provides a method for controlling a radio frequency antenna based on low-dimensional semiconductor materials, including: S1. Low-dimensional semiconductor radio frequency transistors and dual-band antenna structures are set on a flexible PCB substrate.

[0072] The dual-band antenna structure includes a baseband antenna and a harmonic antenna. The gate of the transistor is connected to the baseband antenna via a gold wire bonding wire, and the drain is connected to the harmonic antenna via a gold wire bonding wire.

[0073] This step completes the hardware construction and electrical interconnection of the RF antenna control device. A flexible printed circuit board substrate is selected as the carrier substrate, and a dual-band antenna structure is fabricated on the substrate surface using microstrip line technology. The dual-band antenna structure includes a baseband antenna for receiving baseband signals and a harmonic antenna for radiating second harmonic signals. A low-dimensional semiconductor RF transistor is fixed at a designated position on the substrate. The transistor includes a source, drain, gate, low-dimensional semiconductor channel layer, and a dielectric layer located between the gate and the channel layer. Gold wire bonding is used to fabricate gold wire bonding wires, which are used to electrically connect the gate terminal of the transistor to the baseband antenna, the drain terminal to the harmonic antenna, and the source terminal to the ground loop of the substrate, thus completing the hardware layout of the device.

[0074] S2. Receive the externally input baseband radio frequency signal through the baseband antenna and transmit the baseband radio frequency signal to the gate terminal of the transistor.

[0075] This step completes the reception and transmission of baseband radio frequency signals. The baseband antenna receives the externally incident baseband radio frequency signals and converts the baseband signals in the form of spatial electromagnetic waves into guiding electrical signals. The baseband antenna outputs the received baseband radio frequency signals through the feed point and transmits them to the gate of the low-dimensional semiconductor radio frequency transistor with low loss via gold wire bonding wire, thus completing the input of the baseband signal.

[0076] S3. The second harmonic signal of the fundamental frequency radio frequency signal is generated at the drain terminal of the low-dimensional semiconductor radio frequency transistor.

[0077] This step completes the nonlinear conversion from the fundamental frequency signal to the second harmonic signal, applying a matched DC bias voltage to the low-dimensional semiconductor RF transistor to make the transistor operate in the range of optimal nonlinear response; the fundamental frequency RF signal transmitted to the gate is modulated by electric field coupling to modulate the carrier concentration of the low-dimensional semiconductor channel layer. Utilizing the intrinsic characteristics of high carrier mobility and low junction capacitance of the low-dimensional semiconductor material, a strong nonlinear transport effect is generated in the channel carriers, generating the second harmonic signal corresponding to the fundamental frequency signal at the drain terminal of the transistor, thus completing the frequency conversion.

[0078] S4. The second harmonic signal is transmitted to the harmonic antenna through gold wire bonding wire, and then radiated outward by the harmonic antenna.

[0079] This step completes the transmission and radiation of the second harmonic signal. The second harmonic signal output from the drain terminal of the transistor is transmitted to the feed point of the harmonic antenna with low loss via gold wire bonding. The harmonic antenna converts the second harmonic signal in the form of a guided electrical signal into a spatial electromagnetic wave and radiates it in a directional direction to complete the transmission of the second harmonic signal.

[0080] S5. Impedance matching is achieved at the fundamental frequency and the second harmonic frequency by setting at least one open-circuit matching stub in the dual-frequency antenna structure.

[0081] This step completes the impedance matching between the fundamental frequency and the second harmonic frequency. In the entire transmission link of the fundamental frequency signal and the second harmonic signal, the input impedance of the two operating frequencies is tuned by an open-circuit matching stub set in the dual-frequency antenna structure. The open-circuit matching stub adjusts the impedance characteristics of the transmission path through its own structural parameters, so that the fundamental frequency antenna and the harmonic antenna achieve impedance matching with the preceding and following stage circuits at their respective operating frequencies, reducing signal reflection loss and improving signal transmission and radiation efficiency.

[0082] Based on the above embodiments, as another optional embodiment, the present application embodiment may further include a computer storage medium, which may store multiple instructions. The instructions are adapted to be loaded by a processor and executed as a control method of the above embodiments. For the specific execution process, please refer to the detailed description of the above embodiments, which will not be repeated here.

[0083] Based on the above embodiments, as another optional embodiment, this application embodiment may further include an electronic device. The electronic device may include: at least one processor, at least one communication bus, a user interface, at least one network interface, and a memory.

[0084] The communication bus is used to enable communication between these components.

[0085] The user interface may include a display screen and a camera. Optional user interfaces may also include standard wired interfaces and wireless interfaces.

[0086] The network interface may include standard wired interfaces and wireless interfaces (such as Wi-Fi interfaces).

[0087] The processor may include one or more processing cores. It connects to various parts of the server via various interfaces and lines, executing instructions, programs, code sets, or instruction sets stored in memory, and accessing data stored in memory to perform various server functions and process data. Optionally, the processor may be implemented using at least one of the following hardware forms: Digital Signal Processing (DSP), Field-Programmable Gate Array (FPGA), and Programmable Logic Array (PLA). The processor may integrate one or more of the following: Central Processing Unit (CPU), Graphics Processing Unit (GPU), and modem. The CPU primarily handles the operating system, user interface, and applications; the GPU is responsible for rendering and drawing the content displayed on the screen; and the modem handles wireless communication. It is understood that the modem may also be implemented as a separate chip without being integrated into the processor.

[0088] The memory may include random access memory (RAM) or read-only memory. Optionally, the memory may include a non-transitory computer-readable storage medium. The memory can be used to store instructions, programs, code, code sets, or instruction sets. The memory may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as touch function, sound playback function, image playback function, etc.), instructions for implementing the above-described method embodiments, etc.; the data storage area may store data involved in the above-described method embodiments, etc. Optionally, the memory may also be at least one storage device located remotely from the aforementioned processor. As a computer storage medium, the memory may include an operating system, a network communication module, a user interface module, and an application program for a control method.

[0089] In electronic devices, the user interface is primarily used to provide an input interface for users and to acquire user input data; while the processor can be used to call an application program stored in memory for a control method. When executed by one or more processors, the electronic device performs one or more methods as described in the above embodiments. It should be noted that, for the foregoing method embodiments, for the sake of simplicity, they are all described as a series of actions. However, those skilled in the art should understand that this application is not limited to the described order of actions, because according to this application, some steps can be performed in other orders or simultaneously. Furthermore, those skilled in the art should also understand that the embodiments described in the specification are preferred embodiments, and the actions and modules involved are not necessarily essential to this application.

[0090] In the above embodiments, the descriptions of each embodiment have different focuses. For parts not described in detail in a certain embodiment, please refer to the relevant descriptions in other embodiments.

[0091] In the various embodiments provided in this application, it should be understood that the disclosed apparatus can be implemented in other ways. For example, the apparatus embodiments described above are merely illustrative; for instance, the division of units is only a logical functional division, and in actual implementation, there may be other division methods. For example, multiple units or components may be combined or integrated into another system, or some features may be ignored or not executed. Furthermore, the coupling or direct coupling or communication connection shown or discussed may be through some service interface; the indirect coupling or communication connection between apparatuses or units may be electrical or other forms.

[0092] The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the units can be selected to achieve the purpose of this embodiment according to actual needs.

[0093] Furthermore, the functional units in the various embodiments of this application can be integrated into one processing unit, or each unit can exist physically separately, or two or more units can be integrated into one unit. The integrated unit can be implemented in hardware or as a software functional unit.

[0094] If the integrated unit is implemented as a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage device (CMD). Based on this understanding, the technical solution of this application, in essence, or the part that contributes to the prior art, or all or part of the technical solution, can be embodied in the form of a software product. This computer software product is stored in a memory and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute all or part of the steps of the methods of the various embodiments of this application. The aforementioned memory includes various media capable of storing program code, such as USB flash drives, portable hard drives, magnetic disks, or optical disks.

[0095] The above are merely exemplary embodiments of this disclosure and should not be construed as limiting the scope of this disclosure. Any equivalent changes and modifications made in accordance with the teachings of this disclosure shall still fall within the scope of this disclosure. Other embodiments of this disclosure will readily conceive of those skilled in the art upon consideration of the specification and the disclosure of practical truths.

[0096] This application is intended to cover any variations, uses, or adaptations of this disclosure that follow the general principles of this disclosure and include common knowledge or customary techniques in the art not described in this disclosure. The specification and embodiments are to be considered exemplary only, and the scope and spirit of this disclosure are defined by the claims.

Claims

1. A radio frequency antenna control device based on low-dimensional semiconductor materials, characterized in that, include: Flexible PCB substrate; The low-dimensional semiconductor radio frequency transistor disposed on the flexible PCB substrate includes a source, a drain, a gate, a low-dimensional semiconductor channel layer, and a dielectric layer located between the gate and the low-dimensional semiconductor channel layer. The dual-frequency antenna structure disposed on the flexible PCB substrate includes a base frequency antenna for receiving base frequency signals and a harmonic antenna for radiating second harmonic signals. Multiple gold wire bonding wires connect the gate terminal of the transistor to the feed point of the baseband antenna and the source terminal to the grounding loop of the flexible PCB substrate. At least one open-circuit matching stub is disposed in the dual-band antenna structure, the open-circuit matching stub being used to achieve impedance matching at the fundamental frequency and the second harmonic frequency.

2. The radio frequency antenna control device based on low-dimensional semiconductor materials according to claim 1, characterized in that, The dual-frequency antenna structure adopts a butterfly-shaped radiating arm topology, and the open-circuit matching stub includes a first open-circuit matching stub and a second open-circuit matching stub, which are used to tune the fundamental frequency signal and the second harmonic signal, respectively.

3. The radio frequency antenna control device based on low-dimensional semiconductor materials according to claim 1, characterized in that, The source and drain are formed of aluminum metal and are in ohmic contact with the low-dimensional semiconductor channel layer; the gate is formed of nickel metal; and the dielectric layer is an aluminum oxide dielectric layer.

4. The radio frequency antenna control device based on low-dimensional semiconductor materials according to claim 1, characterized in that, It also includes a Bias-T network, a gate power input terminal, and a drain power input terminal integrated on the flexible PCB substrate. The Bias-T network is used to isolate radio frequency signals from DC bias signals.

5. The radio frequency antenna control device based on low-dimensional semiconductor materials according to claim 1, characterized in that, It also includes a grounding via through the flexible PCB substrate to provide a low-impedance return path for high-frequency signals.

6. The radio frequency antenna control device based on low-dimensional semiconductor materials according to claim 1, characterized in that, The baseband antenna operates at a frequency of 11 GHz, and the harmonic antenna operates at a frequency of 22 GHz.

7. The radio frequency antenna control device based on low-dimensional semiconductor materials according to claim 6, characterized in that, The device has a return loss S11 of less than -10dB at both 11GHz and 22GHz frequencies, and a second harmonic radiation gain greater than 3dBi.

8. A method for controlling a radio frequency antenna based on low-dimensional semiconductor materials, characterized in that, include: Low-dimensional semiconductor radio frequency transistors and dual-band antenna structures are fabricated on a flexible PCB substrate; The dual-band antenna structure includes a baseband antenna and a harmonic antenna. The gate terminal of the transistor is connected to the baseband antenna via a gold wire bonding wire, and the drain terminal is connected to the harmonic antenna via a gold wire bonding wire. The baseband antenna receives externally input baseband radio frequency signals and transmits the baseband radio frequency signals to the gate terminal of the transistor. The second harmonic signal of the fundamental frequency radio frequency signal is generated at the drain terminal of the low-dimensional semiconductor radio frequency transistor. The second harmonic signal is transmitted to the harmonic antenna through gold wire bonding, and then radiated outward by the harmonic antenna; Impedance matching is achieved at the fundamental frequency and the second harmonic frequency by setting at least one open-circuit matching stub in the dual-frequency antenna structure.

9. An electronic device, characterized in that, It includes a processor, a memory, a user interface, and a network interface. The memory is used to store instructions, the user interface and the network interface are used to communicate with other devices, and the processor is used to execute the instructions stored in the memory to cause the electronic device to perform the method as described in claim 8.

10. A computer-readable storage medium, characterized in that, The computer-readable storage medium stores multiple instructions that are adapted to be loaded by a processor and executed as described in claim 8.

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