Normally-off HEMT device with bipolar ohmic contact and method of manufacturing the same
By introducing P-type doped drain and gate regions into HEMT devices and injecting trapped states in the hole compensation buffer layer, the RON degradation problem is solved, and the on-state resistance is reduced and the performance is improved.
CN122161125APending Publication Date: 2026-06-05STMICROELECTRONICS INT NV
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- STMICROELECTRONICS INT NV
- Filing Date
- 2025-12-01
- Publication Date
- 2026-06-05
AI Technical Summary
Technical Problem
Existing HEMT devices struggle to find a compromise between RON degradation in the on-state and breakdown voltage in the off-state, resulting in poor device performance.
Method used
By introducing a P-type doped drain region and a P-type doped gate region into the HEMT device, and by injecting holes in the buffer layer to compensate for the trapped state, the continuity of the conductive channel is ensured, while reducing the on-state resistance.
Benefits of technology
It effectively reduces on-state resistance, improves the dynamic performance of HEMT devices, and avoids increasing the complexity of the manufacturing process.
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Smart Images
Figure CN122161125A_ABST
Abstract
Embodiments of the present disclosure relate to normally-off HEMT devices with bipolar ohmic contacts and methods of manufacturing the same. A HEMT device includes a heterostructure, a gate terminal on the heterostructure, a drain terminal on the heterostructure, and a source terminal on the heterostructure. The drain terminal includes a first conductive contact region and a first doped contact region, the first doped contact region being in direct electrical contact with the first conductive contact region. The first conductive contact region is laterally interposed between the gate terminal and the first doped contact region.
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