A cloud lightning monitoring device based on gallium oxide heterojunction detector array

Abstract

The application relates to the field of semiconductor electronic devices and discloses a cloud layer thunder and lightning monitoring device based on a gallium oxide heterojunction detector array, characterized by comprising a c-Al2O3 substrate, a beta-Ga2O3 functional layer, a DPh-DNTT functional layer and a metal electrode; the beta-Ga2O3 functional layer is located on the c-Al2O3 substrate; the DPh-DNTT functional layer is located on the beta-Ga2O3 functional layer and covers part of the beta-Ga2O3 functional layer; and the metal electrode is arranged on the surface of the DPh-DNTT functional layer and the surface of the beta-Ga2O3 functional layer which is not covered. The application utilizes the solar blind ultraviolet response characteristics (200-280 nm) of the beta-Ga2O3 material, can accurately capture ultraviolet radiation generated by thunder and lightning, and provides a natural "dark background" due to the low near-ground background radiation of the wave band because of the absorption of the earth's ozone layer, thereby significantly improving the signal-to-noise ratio of monitoring. Moreover, the beta-Ga2O3 and the DPh-DNTT have obvious absorption peaks in the ultraviolet wave band, thereby ensuring high selective monitoring of the device on the characteristic signals of thunder and lightning.

Description

Technical Field

[0001] This invention belongs to the field of semiconductor electronic device technology, specifically relating to the fabrication of a cloud lightning monitoring device based on a gallium oxide heterojunction detector array. Background Technology

[0002] Lightning, a natural phenomenon characterized by powerful electric currents, extremely high temperatures, and intense electromagnetic radiation, poses a significant threat. It can directly cause casualties, damage electronic equipment, paralyze power supply systems, and trigger fires and explosions, severely endangering economic and social stability. Therefore, lightning monitoring is crucial for disaster early warning, ensuring aerospace safety, power supply, and public safety. However, lightning monitoring currently faces numerous challenges: lightning activity is random and unpredictable, existing monitoring systems have limitations in coverage and accuracy, making comprehensive real-time capture difficult; furthermore, traditional lightning monitoring and early warning devices are ineffective at detecting the specific wavelengths of lightning.

[0003] Gallium oxide (GaO), as an ultra-wide bandgap semiconductor material, has a bandgap width (4.2-5.3 eV) that precisely corresponds to the energy range of solar-blind ultraviolet light. The development of cloud lightning monitoring devices using GaO photodetectors stems from the urgent need for highly reliable and fast-response natural phenomenon monitoring technologies. The intense ultraviolet radiation generated by lightning, especially its energy concentrated in the solar-blind ultraviolet band (200-280 nm), is strongly absorbed by the Earth's ozone layer, resulting in extremely low background radiation in the near-surface environment. This effectively filters out visible light and infrared interference from sunlight, providing a natural "dark background" for lightning detection, thus significantly improving the signal-to-noise ratio. This characteristic gives GaO photodetectors an inherent spectral selectivity for solar-blind ultraviolet radiation, making them particularly suitable for detecting the characteristic ultraviolet signals emitted by lightning. In addition, gallium oxide materials also have high breakdown field strength, good physicochemical stability and radiation resistance. Combined with increasingly mature wafer fabrication technology and effective device packaging solutions, they can adapt to strong electromagnetic interference, temperature changes and harsh environments that may occur in cloud and high-altitude monitoring, ensuring the long-term stable operation of monitoring devices.

[0004] However, gallium oxide-based optoelectronic devices have long been limited in practical applications by inherent material defects such as persistent photoconductivity, resulting in long photocurrent response recovery times. This restricts the temporal resolution and dynamic performance of the devices, which is detrimental to the capture of transient lightning events. Although improving the growth quality of gallium oxide has greatly improved the response speed of gallium oxide photodetectors in recent years, this approach is no longer sufficient for further improvements. Meanwhile, utilizing heterostructures to build built-in electric fields to suppress persistent photoconductivity and improve response speed is currently a research hotspot. For example, improving response speed can be achieved with only a small sacrifice in responsivity, making it possible to capture transient lightning events.

[0005] Among numerous heterojunction design schemes, organic-inorganic materials have always been a research focus due to their simple processing and high device performance. Furthermore, since gallium oxide is a material with low hole mobility, selecting a material with high hole mobility to form a PN heterojunction is a feasible approach. DPh-DNTT is a promising organic material; in addition to its high hole mobility, it exhibits significant absorption in the ultraviolet region and possesses excellent electron transport performance and thermal stability. Simultaneously, the array structure enables the device not only to sensitively detect the presence of ultraviolet light but also to perform imaging-level precise sensing and localization of the location, intensity, movement trend, and even early micro-discharge processes of lightning. The orderly spatial distribution of multiple detection units allows the device to cover a wider monitoring field of view, and by analyzing the time difference or intensity distribution of signals arriving at different units, spatial localization of lightning activity can be achieved, which is crucial for identifying the source of lightning and tracking its development path. Therefore, how to develop an effective device for monitoring cloud lightning release based on such materials with special properties and through heterojunction and array design has become a valuable but not yet fully explored technical direction for scientific lightning protection and monitoring. Summary of the Invention

[0006] The purpose of this invention is to overcome the shortcomings of the prior art and provide a cloud lightning monitoring device based on a gallium oxide heterojunction detector array. The core of this invention lies in using Ga2O3 (with low hole transport rate) and DPh-DNTT (with high hole transport rate) to form a heterojunction. This utilizes the unique solar-blind ultraviolet response characteristics of gallium oxide to monitor cloud lightning. Furthermore, by leveraging the band alignment characteristics of the heterojunction and utilizing the built-in electric field, efficient separation and rapid transport of photogenerated carriers are achieved, effectively improving the response speed of the photodetector. This is suitable for the rapid generation of lightning and beneficial for monitoring cloud lightning. Simultaneously, through device arraying, it can not only sensitively sense ultraviolet light but also achieve imaging-level precise sensing and localization of the location, intensity, movement trend, and even early micro-discharge processes of lightning. To achieve stable and high-quality gallium oxide material preparation, we employ plasma-enhanced chemical vapor deposition (PECVD) to prepare gallium oxide epitaxial materials. The core of this process lies in utilizing plasma as an active medium, effectively overcoming some key bottlenecks in gallium oxide material preparation. First, this technology significantly reduces the temperature required for epitaxial growth and achieves a high growth rate through plasma-activated reactive precursors. This helps obtain high-quality gallium oxide epitaxial films with a lower thermal budget, laying a solid foundation for subsequent device fabrication. In terms of material quality control, PECVD technology exhibits great flexibility. For example, by using oxygen plasma to treat gallium oxide films in situ, the concentration of oxygen vacancy defects in the film can be effectively reduced, thereby significantly improving its optoelectronic properties, such as reducing dark current and increasing photoresponse speed. DPh-DNTT is prepared via spin coating, a process that greatly reduces device fabrication costs and allows for the fabrication of large-area films, which is beneficial for device arraying.

[0007] In a first aspect, this invention provides a gallium oxide-based heterojunction photodetector array for cloud lightning monitoring. The gallium oxide-based heterojunction photodetector array comprises multiple photodetector arrays. The photodetectors employ a sandwich structure, comprising, from bottom to top, a c-Al₂O₃ substrate, a β-Ga₂O₃ functional layer, a DPh-DNTT functional layer, and a Ti / Au electrode. The core innovation of this invention lies in the fact that the DPh-DNTT functional layer and the β-Ga₂O₃ functional layer are not simply physically stacked, but rather form a heterojunction interface with type II bandgap alignment characteristics, which promotes efficient separation and rapid extraction of photogenerated electron-hole pairs. Furthermore, by utilizing the recombination properties of DPh-DNTT for efficient hole transport and β-Ga₂O₃ for efficient electron transport, efficient electron-hole pair separation is further achieved. This design enables the device to have a more efficient response speed, allowing it to adapt to the rapid generation of lightning. In addition, the array structure design further ensures that the device can accurately sense and locate the position, intensity, movement trend, and even early micro-discharge processes of lightning at the imaging level.

[0008] As a preferred technical solution, the thickness of the β-Ga2O3 functional layer of the detector is 100nm~300nm, and the thickness of the DPh-DNTT functional layer is 300nm~700nm. The electrode is preferably a circular Ti / Au electrode with a diameter of 1mm. This specific structure device exhibits excellent electrical performance, with high response speed and detectivity, providing direct and strong experimental evidence for cloud lightning monitoring.

[0009] A second aspect of the present invention provides a method for fabricating the above-mentioned gallium oxide heterojunction cloud lightning monitoring device. The key to this method lies in the control of the PECVD process, which reduces internal defects in the crystal while achieving thin film crystallization, thereby achieving the fabrication of a high-quality thin film. The method includes the following steps:

[0010] S1. Clean and dry the c-Al2O3 substrate;

[0011] S2. Prepare DPh-DNTT-chlorobenzene precursor solution: Add a certain amount of DPh-DNTT to chlorobenzene, stir and let stand to prepare DPh-DNTT-chlorobenzene precursor solution for later use;

[0012] S3. Preparation of the β-Ga2O3 layer: A certain amount of metallic gallium (99.99%) is placed in a ceramic boat. Then, a cleaned sapphire is inverted at the other end of the ceramic boat, 5 cm away from the metallic gallium. The ceramic boat is placed in the center of the quartz tube furnace of the PECVD apparatus. Once the pressure inside the quartz tube drops to approximately 1 Pa, argon gas (99.999%) is introduced at a suitable flow rate to maintain a constant pressure inside the tube. In the CNC instrument of the PECVD apparatus, the temperature is set and the heater is activated. The temperature inside the tube furnace is slowly increased to a suitable temperature at a rate of 10 °C / min. Then, oxygen is introduced and radio frequency is activated for material growth. After growth is complete, the material is cooled to room temperature and removed.

[0013] S4. Preparation of DPh-DNTT layer: A 0.2 mol / L DPh-DNTT-chlorobenzene precursor solution was spin-coated onto a β-Ga2O3 film using a two-step spin-coating method (first spin-coating at 600 rpm for 5 s, then spin-coating at 2000 rpm for 20 s). After spin-coating, the wet film was placed on an 80℃ hot stage and heated for 10 minutes to evaporate the organic solvent.

[0014] S5. By evaporation through a mask, a circular Ti / Au electrode with a diameter of 1 mm is formed on the surface of the DPh-DNTT thin film and the β-Ga2O3 thin film, thus completing the device fabrication.

[0015] Based on the above design and preparation, the present invention can exhibit good performance for lightning monitoring.

[0016] In summary, this invention creatively constructs a detector for cloud lightning monitoring through a non-obvious combination of specific materials (high hole mobility DPh-DNTT and high electron mobility β-Ga2O3) and a key PECVD process. This device not only utilizes solar-blind response characteristics to solve the common industry problem of traditional detectors' inability to monitor lightning, but also achieves rapid response to lightning strikes. Therefore, this invention provides a core device-level solution for the development of next-generation lightning monitoring devices and offers an important pathway for scientific lightning protection. This invention provides a cloud lightning monitoring device based on a gallium oxide heterojunction detector array. It has the following beneficial effects:

[0017] 1. This invention utilizes the solar-blind ultraviolet response characteristics (200-280nm) of β-Ga2O3 material to accurately capture ultraviolet radiation generated by lightning. This wavelength band has extremely low background radiation near the ground due to absorption by the Earth's ozone layer, providing a natural "dark background" and significantly improving the signal-to-noise ratio of the monitoring. Furthermore, both β-Ga2O3 and DPh-DNTT have significant absorption peaks in the ultraviolet band, ensuring high selectivity for lightning characteristic signals and overcoming the limitations of traditional detectors that are susceptible to interference from visible light and infrared light.

[0018] 2. The core innovation of this invention lies in constructing a type II band heterojunction using β-Ga2O3 (high electron mobility) and DPh-DNTT (high hole mobility) to form a built-in electric field, promoting efficient separation and rapid transport of photogenerated carriers, thereby significantly shortening the response time. The device can be turned on in just 0.412 s, and the turn-off time is even shorter at 0.027 s. This allows the device to quickly capture the transient state of lightning and rapidly recover for continuous monitoring, solving the response delay problem caused by the continuous photoconductivity effect in traditional devices.

[0019] 3. The present invention exhibits a high efficiency of 2.11 × 10⁻⁶ at a bias voltage of -40V. 12 Jones's detectivity indicates its excellent detection capability for weak signals, making it suitable for long-distance monitoring of lightning in high-altitude cloud environments. Current-voltage testing shows that the device maintains a high light-to-dark ratio (10⁻⁶) even under high voltage. 4 This ensures stability under strong electromagnetic interference.

[0020] 4. The device of this invention exhibits stable electrical performance under both high and low bias voltages, and the current-time curves remain consistent under different bias voltages, indicating that it has good anti-interference capability and wide voltage range operating characteristics. Combined with the high breakdown field strength and radiation resistance of gallium oxide material, as well as the thermal stability of DPh-DNTT, the device can withstand harsh conditions such as strong electromagnetic interference and temperature fluctuations at high altitudes, ensuring the reliability of long-term monitoring. Attached Figure Description

[0021] Figure 1 This is a cross-sectional electron microscope scanning image of the DPh-DNTT / β-Ga2O3 photodetector of the present invention;

[0022] Figure 2 This is a schematic diagram of the ultraviolet-visible absorption test results of β-Ga2O3 of the present invention;

[0023] Figure 3 This is a current-voltage curve of the DPh-DNTT / β-Ga2O3 photodetector of the present invention;

[0024] Figure 4 The current-time curves of the DPh-DNTT / β-Ga2O3 photodetector of the present invention under different bias voltages are shown.

[0025] Figure 5 The switching response time diagram of the DPh-DNTT / β-Ga2O3 photodetector of the present invention under a bias voltage of -15V is shown.

[0026] Figure 6 The detectivity curve of the DPh-DNTT / β-Ga2O3 photodetector of the present invention is shown.

[0027] Figure 7 The responsivity curve of the DPh-DNTT / β-Ga2O3 photodetector of the present invention is shown.

[0028] Figure 8 This is a schematic diagram of the DPh-DNTT / β-Ga2O3 photodetector array of the present invention applied to cloud lightning monitoring;

[0029] Figure 9 The fabrication process of the DPh-DNTT / β-Ga2O3 photodetector. Detailed Implementation

[0030] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0031] Example 1

[0032] like Figure 1The image shown is a cross-sectional scanning electron microscope (SEM) image of the DPh-DNTT / β-Ga2O3 cloud lightning monitoring device. It reveals that the device comprises a c-Al2O3 substrate, a β-Ga2O3 functional layer, a DPh-DNTT functional layer, and Ti / Au electrodes. The β-Ga2O3 functional layer is located on the c-Al2O3 substrate, and the DPh-DNTT functional layer is located on top of the β-Ga2O3 functional layer. Finally, circular Ti / Au electrodes are deposited on both the DPh-DNTT and β-Ga2O3 functional layers by vapor deposition, thus completing the device fabrication.

[0033] The β-Ga2O3 functional layer is prepared by PECVD, a method that can obtain high-quality gallium oxide epitaxial films with a low thermal budget, which is beneficial for optimizing the crystal quality of the device. The DPh-DNTT functional layer is prepared by spin coating, a method that does not require complex processes, is low in cost, and can form large-area films.

[0034] A method for fabricating a gallium oxide heterojunction cloud lightning monitoring device includes the following steps:

[0035] S1. Pre-treat the c-Al2O3 substrate by ultrasonically cleaning it with acetone, anhydrous ethanol and deionized water for 10 minutes in sequence, and then drying it with high-purity nitrogen gas for later use.

[0036] S2. Take 0.985g DPh-DNTT and add it to 10mL chlorobenzene. Stir for 2 hours and let stand for 12 hours to prepare a 0.2mol / L DPh-DNTT-chlorobenzene precursor solution for later use.

[0037] S3. Place a certain amount of gallium metal (99.99%) in a ceramic boat, then invert the cleaned sapphire at the other end of the ceramic boat, 5 cm away from the gallium metal. Place the ceramic boat in the center of the quartz tube furnace of the PECVD apparatus. Once the pressure inside the quartz tube drops to approximately 1 Pa, introduce argon gas (99.999%) at a flow rate of 80 sccm to maintain the pressure inside the tube at a constant 40 Pa. In the CNC instrument of the PECVD apparatus, set the temperature and turn on the heater, slowly raising the temperature inside the tube furnace to 850°C at a rate of 10°C / min. Then, introduce oxygen at a flow rate of 5 sccm and turn on 150W RF for material growth for 1 hour. After growth is complete, cool to room temperature and remove the material.

[0038] S4. Take 100 μL of DPh-DNTT chlorobenzene precursor solution and drop it onto the β-Ga2O3 functional layer that is 1 / 2 covered with tape. Then spin-coat the DPh-DNTT-chlorobenzene precursor solution to form a liquid film. Spin-coat at 600 rpm for 5 s and then at 2000 rpm for 20 s. After forming the liquid film, place it on an 80℃ hot plate for 10 minutes to evaporate the solvent.

[0039] S5. Finally, a mask is applied, and Ti / Au electrodes with a diameter of 1 mm are fabricated on the β-Ga2O3 functional layer and the DPh-DNTT functional layer by vapor deposition, thus obtaining the DPh-DNTT / β-Ga2O3 detector with cloud lightning monitoring capability.

[0040] Example 2

[0041] The DPh-DNTT / β-Ga2O3 cloud lightning monitoring device comprises a c-Al2O3 substrate, a β-Ga2O3 functional layer, a DPh-DNTT functional layer, and an Ag electrode. The β-Ga2O3 functional layer is located on the c-Al2O3 substrate, and the DPh-DNTT functional layer is located on the β-Ga2O3 functional layer. Finally, circular Ag electrodes are formed on the DPh-DNTT functional layer and the β-Ga2O3 functional layer by vapor deposition, thus completing the device.

[0042] The β-Ga2O3 functional layer was prepared by PECVD. The DPh-DNTT functional layer was prepared by spin coating.

[0043] A method for fabricating a gallium oxide heterojunction cloud lightning monitoring device includes the following steps:

[0044] S1. Pre-treat the c-Al2O3 substrate by ultrasonically cleaning it with acetone, anhydrous ethanol and deionized water for 10 minutes in sequence, and then drying it with high-purity nitrogen gas for later use.

[0045] S2. Take 1.478g of DPh-DNTT and add it to 10mL of chlorobenzene. Stir for 2 hours and let stand for 12 hours to prepare a 0.3mol / L DPh-DNTT-chlorobenzene precursor solution for later use.

[0046] S3. Place a certain amount of gallium metal (99.99%) in a ceramic boat, then invert the cleaned sapphire at the other end of the ceramic boat, 5 cm away from the gallium metal. Place the ceramic boat in the center of the quartz tube furnace of the PECVD apparatus. Once the pressure inside the quartz tube drops to approximately 1 Pa, introduce argon gas (99.999%) at a flow rate of 85 sccm to maintain the pressure inside the tube at a constant 40 Pa. In the CNC instrument of the PECVD apparatus, set the temperature and turn on the heater, slowly raising the temperature inside the tube furnace to 820°C at a rate of 10°C / min. Then, introduce oxygen at a flow rate of 2 sccm and turn on 150W RF for material growth for 1.2 hours. After growth is complete, cool to room temperature and remove the material.

[0047] S4. Take 100 μL of DPh-DNTT chlorobenzene precursor solution and drop it onto the β-Ga2O3 functional layer that is 1 / 2 covered with tape. Then spin-coat the DPh-DNTT-chlorobenzene precursor solution to form a liquid film. Spin-coat at 600 rpm for 5 s and then at 2000 rpm for 20 s. After forming the liquid film, place it on an 80℃ hot plate for 10 minutes to evaporate the solvent.

[0048] S5. Finally, a mask is applied, and Ag electrodes with a diameter of 1.2 mm are fabricated on the β-Ga2O3 functional layer and the DPh-DNTT functional layer respectively by vapor deposition. Thus, the DPh-DNTT / β-Ga2O3 detector with cloud lightning monitoring capability is obtained.

[0049] The DPh-DNTT / β-Ga2O3 cloud lightning detection device provided in the above embodiments achieves the detection of special solar-blind bands of lightning through its natural solar-blind response characteristics, solving the problem that traditional detection devices cannot detect lightning. Furthermore, by forming a heterojunction structure with high hole transport rate DPh-DNTT and high electron transport rate β-Ga2O3, the electron-hole velocity is further improved, enabling rapid separation and transmission, thus achieving rapid monitoring of lightning. This provides ideas for the design optimization of lightning monitoring devices.

[0050] Figure 1 This is a cross-sectional scanning electron microscope (SEM) image of the DPh-DNTT / β-Ga2O3 photodetector.

[0051] Figure 2 The results of the ultraviolet-visible absorption test of β-Ga2O3 show that it has a significant absorption peak in the solar-blind band of 200-280 nm, which indicates that β-Ga2O3 has solar-blind ultraviolet response characteristics, which plays an important role in monitoring the special ultraviolet light emitted by lightning.

[0052] Figure 3The current-voltage curve of the DPh-DNTT / β-Ga2O3 photodetector shows that the device can still achieve 10 even at a high bias voltage of -40V. 4 The high light-to-dark ratio indicates that the device has good detection capabilities.

[0053] Figure 4 The current-time curves of the DPh-DNTT / β-Ga2O3 photodetector under different bias voltages show that the device still has good response capability under multiple bias voltages. This indicates that the device is not only suitable for low bias voltages, but can also effectively detect under high bias voltages, which provides a certain degree of noise immunity for special environments such as lightning.

[0054] Figure 5 The switching response time of the DPh-DNTT / β-Ga2O3 photodetector under a -15V bias voltage shows that the device is stable in switching, requiring 0.32s to turn on and only 0.027s to turn off. This indicates that the device can detect lightning within 0.32s and return to its initial state within 0.027s, which is highly advantageous for continuous lightning detection.

[0055] Figure 6 The graph shows the detectivity of the DPh-DNTT / β-Ga2O3 photodetector. At -40V, the device detectivity can reach 2.11 × 10⁻⁶. 12 Jones, which indicates that the device has excellent detection capabilities even for extremely weak signals, thus enabling the monitoring of lightning in the high atmosphere.

[0056] Figure 7 The graph shows the responsivity of the DPh-DNTT / β-Ga2O3 photodetector. At -40V, the responsivity of the device is only 3.24A / W, and the low responsivity indicates that the device material has high quality.

[0057] Although embodiments of the invention have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and alterations can be made to these embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the appended claims and their equivalents.

Claims

1. A cloud lightning monitoring device based on a gallium oxide heterojunction detector array, characterized in that, It includes a c-Al2O3 substrate, a β-Ga2O3 functional layer, a DPh-DNTT functional layer, and metal electrodes; the β-Ga2O3 functional layer is located on the c-Al2O3 substrate; the DPh-DNTT functional layer is located on the β-Ga2O3 functional layer and covers a portion of the β-Ga2O3 functional layer; the metal electrodes are respectively disposed on the surface of the DPh-DNTT functional layer and on the surface of the uncovered β-Ga2O3 functional layer.

2. The cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to claim 1, characterized in that, The metal electrode is a Ti / Au electrode or an Ag electrode; the β-Ga2O3 functional layer is an epitaxial film prepared by PECVD; and the DPh-DNTT functional layer is an organic film prepared by spin coating.

3. A method for fabricating a cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to any one of claims 1-2, characterized in that, Includes the following steps: S1. Cleaning and pretreatment of c-Al2O3 substrate; S2. Prepare the DPh-DNTT precursor solution; S3. A β-Ga2O3 functional layer is grown on the c-Al2O3 substrate using PECVD. S4. Spin-coat the DPh-DNTT precursor solution onto a portion of the β-Ga2O3 functional layer, and heat-treat to form the DPh-DNTT functional layer. S5. Metal electrodes are fabricated on the β-Ga2O3 functional layer and the DPh-DNTT functional layer respectively to obtain the cloud lightning monitoring device.

4. The method for fabricating a cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to claim 3, characterized in that, In step S1, the pretreatment specifically involves ultrasonically cleaning the c-Al2O3 substrate sequentially with acetone, anhydrous ethanol, and deionized water, followed by drying with high-purity nitrogen.

5. The method for fabricating a cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to claim 3, characterized in that, In step S2, the DPh-DNTT precursor solution is a chlorobenzene solution of DPh-DNTT with a molar concentration of 0.2~0.3 mol / L.

6. The method for fabricating a cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to claim 3, characterized in that, In step S2, the preparation process of the DPh-DNTT precursor solution is as follows: DPh-DNTT is added to chlorobenzene, stirred for 2 hours, and allowed to stand for 12 hours.

7. The method for fabricating a cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to claim 3, characterized in that, The specific implementation method of step S3 is as follows: place the gallium metal at the source end of the PECVD device, and invert the c-Al2O3 substrate at a distance of 5cm from the gallium metal; after evacuation, argon gas is introduced to maintain the pressure inside the tube at 40Pa, and the temperature is increased to 820~850℃ at a rate of 10℃ / min; oxygen is introduced and the radio frequency power supply is turned on for growth, the growth time is 1~1.2 hours, and after the growth is completed, it is cooled to room temperature.

8. The method for fabricating a cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to claim 3, characterized in that, In step S3, the flow rate of the argon gas is 80~85 sccm, the flow rate of the oxygen gas is 2~5 sccm, and the power of the radio frequency power supply is 150W.

9. The method for fabricating a cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to claim 3, characterized in that, In step S4, the specific spin coating process is as follows: DPh-DNTT precursor solution is dropped onto the β-Ga2O3 functional layer, which is covered by a shielding material in 1 / 2 area. First, spin coating is performed at 600 rpm for 5 seconds, and then at 2000 rpm for 20 seconds. The heat treatment is as follows: the spin-coated device is placed on an 80°C hot stage and heated for 10 minutes to evaporate the solvent.

10. The method for fabricating a cloud lightning monitoring device based on a gallium oxide heterojunction detector array according to claim 3, characterized in that, In step S5, a circular electrode with a diameter of 1~1.2 mm is prepared by vapor deposition combined with a mask.

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