A semiconductor process equipment, wafer process treatment method

Abstract

The application provides a semiconductor process equipment and a wafer process treatment method. The semiconductor process equipment comprises a process chamber and a position adjustment chamber, the position adjustment chamber comprises: an adjustment chamber body, and the process chamber transmits a wafer; a pumping assembly forms a vacuum environment in the adjustment chamber body; a position adjustment assembly detects position information of the wafer and drives the wafer to rotate so that the wafer stops at a target position; and a cooling assembly for cooling the wafer is arranged on the position adjustment chamber or a transmission path from the process chamber to the position adjustment chamber. The semiconductor process equipment enables the wafer to be calibrated and cooled in a vacuum environment after etching treatment without being transmitted to an atmospheric environment for position calibration and natural cooling, optimizes the overall manufacturing process of the wafer etching process, shortens the transmission time and cooling time of a single wafer for multiple etching, and thus significantly reduces the overall time of the wafer etching process link and improves the manufacturing efficiency.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, specifically to a semiconductor process equipment and a wafer processing method applicable to the semiconductor process equipment. Background Technology

[0002] In existing technologies, the etching process of semiconductors, such as Figure 1 As shown, due to the uneven temperature of the stage supporting the wafer, with high-temperature regions that are higher than other areas, the etching rates of different regions of the wafer are inconsistent in the circumferential direction (the etching rate is faster in the regions of the wafer corresponding to the high-temperature areas of the stage). This uneven etching affects the wafer's performance. Therefore, in current etching processes, to improve the etching uniformity across the entire wafer, intermittent rotational etching is typically performed. That is, the angle region on the wafer corresponding to the faster etching rate is defined as 'a', and the single etching time is set to 't'. After etching begins, etching is paused every 't' hours, the wafer is transferred outside the process chamber and rotated by angle 'a', then returned to the process chamber, etched for 't' hours, paused, and rotated again... This cycle ensures that each region of the wafer experiences both the same amount of etching at a faster rate and the same amount of etching at a slower rate, thus guaranteeing the etching uniformity across the entire wafer.

[0003] But it also leads to, for example Figure 7 As shown, the etching process involves numerous steps. The wafer needs to be transferred back and forth multiple times between the process chamber and the front-end transport module in an atmospheric environment. After each etching process, the wafer needs to be removed from the vacuum process chamber, passed through a switching chamber that connects the vacuum and atmospheric environments, and then transferred back to the front-end transport module in the atmospheric environment for cooling and repositioning. After cooling and repositioning, the wafer must pass through the vacuum switching chamber again before entering the process chamber for further etching. The entire process is cumbersome and time-consuming, significantly increasing the total time required to complete the etching process and impacting manufacturing efficiency. Summary of the Invention

[0004] In view of this, this application aims to provide a semiconductor process equipment that optimizes the overall fabrication process of wafer etching, shortens the transfer time and cooling time for multiple etching operations on a single wafer, thereby significantly reducing the overall time of the wafer etching process and improving fabrication efficiency.

[0005] This application provides a semiconductor process apparatus, including a process chamber and a position adjustment chamber, wherein the process chamber is used to process wafers in a vacuum environment;

[0006] The position adjustment chamber includes:

[0007] The cavity body is adjusted and equipped with a first gate valve for transferring wafers to the process chamber;

[0008] A vacuum assembly, connected to the adjustment cavity body, is used to create a vacuum environment within the adjustment cavity body;

[0009] A position adjustment component is disposed inside the adjustment cavity body and is used to detect the position information of the wafer and drive the wafer to rotate so that the wafer stops at the target position.

[0010] The semiconductor process equipment further includes a cooling assembly for cooling the wafer, the cooling assembly being disposed in the position adjustment chamber or on the transport path from the process chamber to the position adjustment chamber.

[0011] In one possible implementation, the cooling assembly is disposed in the position adjustment chamber to provide cooling during wafer position adjustment.

[0012] In one possible implementation, the cooling assembly includes an inflation assembly that blows cooling gas into the adjustment chamber body.

[0013] In one possible implementation, it further includes a front-end transfer module for transferring wafers in an atmospheric environment; the position adjustment chamber is located between the process chamber and the front-end transfer module, and is provided with a second gate valve capable of transferring wafers with the front-end transfer module.

[0014] In one possible implementation, it also includes a vacuum conversion chamber and a front-end transmission module;

[0015] The vacuum conversion chamber can switch between vacuum and atmospheric environments, and one side is connected to the process chamber and the other side is connected to the front-end transmission module.

[0016] In one possible implementation, a front-end transmission module is also included; the front-end transmission module is further provided with a position calibration mechanism to perform initial position calibration on the wafer before it first enters the process chamber.

[0017] In one possible implementation, the position adjustment component includes:

[0018] Sensing components are used to detect the alignment marks and center position of the wafer and transmit the detection information to the control system;

[0019] The rotating mechanism, electrically connected to the control system, is used to carry the wafer and rotate it based on its initial position so that the wafer stops at the target position.

[0020] In one possible implementation, the sensing component includes:

[0021] The light-emitting element illuminates the edge of the wafer from one side;

[0022] The sensor senses the outline information of the wafer by receiving the light source signal from the light-emitting element, and transmits the information to the control system so that the control system can position the alignment mark and the center of the wafer.

[0023] In one possible implementation, the light-emitting element includes a light source and a light mirror that converts the light from the light source into parallel light, and the sensor is a graphic sensor.

[0024] In one possible implementation, the rotating mechanism includes:

[0025] Adjust the support platform, including multiple support sections distributed along the circumference of the wafer;

[0026] The power component drives the adjustment support platform to rotate;

[0027] The positioning structure may be a positioning stop or positioning groove set on the adjustment support platform, or a friction pad laid on the support part, or an adsorption structure for adsorbing wafers.

[0028] This application also provides a semiconductor process apparatus, including a front-end transfer module, a vacuum conversion chamber, a transfer chamber, a process chamber, and a position adjustment chamber, wherein the process chamber is used to process a wafer, and the transfer chamber is connected to the process chamber.

[0029] One side of the vacuum conversion chamber is connected to the transmission chamber via a third valve and is equipped with a third valve for isolating the connection; the other side is connected to the front-end transmission module via a fourth valve.

[0030] The position adjustment chamber is connected to the transmission chamber via a first valve and is isolated from the front-end transmission module. A position adjustment component is provided in the adjustment chamber body of the position adjustment chamber. The position adjustment component is used to detect the position information of the wafer and drive the wafer to rotate so that the wafer stops at the target position.

[0031] This application also provides a wafer processing method, applicable to any of the above-mentioned semiconductor process equipment, the method comprising:

[0032] The wafer that has completed the previous process is transferred from the process chamber to the position adjustment chamber;

[0033] The wafer is rotated to the target position using the position adjustment component.

[0034] The rotated wafer is transferred to the process chamber to perform the next process.

[0035] In one possible implementation, it also includes:

[0036] After the wafer that has completed the previous process is transferred from the process chamber to the position adjustment chamber, the wafer is cooled by the cooling assembly.

[0037] In one possible implementation, it also includes:

[0038] The wafer is cooled by introducing cooling gas into the position adjustment chamber through the cooling assembly; and

[0039] After cooling is complete, the cooling gas in the position adjustment chamber is extracted to create a vacuum environment in the position adjustment chamber.

[0040] The semiconductor process equipment provided in this application allows the wafer to enter a vacuum environment for position calibration and cooling after the first etching and between each subsequent etching, without needing to be transported to the atmospheric environment for calibration and natural cooling. This optimizes several aspects: First, it streamlines the wafer transport path and fabrication steps in the etching process, eliminating the need for the wafer to undergo two vacuum-to-atmosphere transitions between adjacent etching processes, thus reducing transport time. Second, the wafer is cooled by the cooling components, significantly shortening the cooling time compared to natural cooling in the atmospheric environment. Combined with the reduced transport time, the semiconductor process equipment provided in this application significantly reduces the transport and cooling time for multiple etching operations on a single wafer, thereby significantly reducing the overall time of the wafer etching process and improving manufacturing efficiency. Third, compared to repeatedly transporting the etched wafer to the front-end transport module in the atmospheric environment, the semiconductor process equipment in this application also prevents excessive diffusion of byproducts from the wafer surface to the front-end transport module, reducing the risk of byproduct contamination of the clean, un-etched wafers located in the front-end transport module and improving contamination control performance. Attached Figure Description

[0041] Figure 1 The diagram shown is a top view of the interior of a process chamber in a related technology.

[0042] Figure 2 The figure shows the airflow distribution within the process chamber in the relevant technology;

[0043] Figure 3 The diagram shown illustrates uneven wafer etching in related technologies.

[0044] Figure 4 The diagram shows the composition of etching process equipment in related technologies;

[0045] Figure 5 The diagram shown is a side view of the connection between the process chamber and the front-end transmission module in the related technology.

[0046] Figure 6 The diagram shown is a top view of the connection between the process chamber and the front-end transmission module in the related technology.

[0047] Figure 7 The diagram shows the transfer flow of the wafer etching process in related technologies.

[0048] Figure 8 The diagram shown is a schematic diagram of the connections between the chambers in the semiconductor process equipment in an embodiment of this application;

[0049] Figure 9 The diagram shown is a schematic representation of the transfer process of the wafer etching process in an embodiment of this application.

[0050] Figure 10 The figure shown is an overall schematic diagram of the position adjustment chamber in an embodiment of this application;

[0051] Figure 11 The diagram shown is an exploded view of the composition of the position adjustment chamber in an embodiment of this application;

[0052] Figure 12 The figure shown is a cross-sectional schematic diagram of the position adjustment chamber in an embodiment of this application;

[0053] Figure 13 The diagram shown is a structural schematic of the adjustment support platform of the rotating mechanism in an embodiment of this application;

[0054] Figure 14 The diagram shown is a schematic representation of the composition and application of the sensing components in an embodiment of this application.

[0055] Figure 15 The diagram shown is a schematic representation of the composition of the first air extraction component in an embodiment of this application.

[0056] Figure 16 The diagram shown is a schematic representation of the composition of the inflation component in an embodiment of this application.

[0057] Figures 1-16 middle:

[0058] 1. Front-end transmission module; 2. Vacuum conversion chamber; 3. Position adjustment chamber; 4. Transmission chamber; 5. Process chamber; 6. First valve; 7. Third valve; 8. Fourth valve; 9. Position calibration mechanism;

[0059] 31. Adjust the cavity body; 311. Cavity top cover; 312. Cavity bottom cover;

[0060] 32. Rotating mechanism; 321. Adjusting support platform; 3211. Support part; 3212. Friction pad; 322. Power component;

[0061] 33. Sensing component; 331. Light-emitting element; 3311. Light source; 3312. Light mirror; 332. Sensor;

[0062] 34. First vacuum assembly; 340. Vacuum pipeline; 341. Vacuum gauge; 342. First diaphragm valve; 343. Vacuum switch;

[0063] 35. Cooling assembly; 350. Cooling air piping; 351. Second diaphragm valve; 352. Filter; 353. Check valve; 354. Diffuser. Detailed Implementation

[0064] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0065] This application relates to the field of semiconductor fabrication, and particularly to chemical etching processes. In etching processes, etching uniformity (especially the consistency of etching depth across different areas of the wafer surface) is crucial to ensuring the performance of circuit patterns on the wafer.

[0066] Current etching machines typically employ a dual-stage system within the etching chamber to simultaneously etch two wafers. For example... Figure 1 As shown, the dual-stage setup results in higher temperatures in certain areas of each stage (these areas contain more structural material and are therefore warmer than other areas, referred to as high-temperature zones). Consequently, the temperature of the wafer located in these high-temperature zones will also be higher, leading to uneven wafer temperature. If all areas of the wafer surface are etched simultaneously, the high-temperature areas will have a faster etching rate, resulting in a greater etching depth than the lower-temperature areas, thus causing uneven etching. Furthermore, if... Figure 2 As shown, due to the continuous airflow of gas entering and exiting the process chamber, the gas density varies in different areas, which also leads to different etching rates in different areas of the wafer surface.

[0067] To improve the etching uniformity across different areas of a wafer, the etching process in related technologies typically involves multiple etching operations on the wafer. (Reference) Figure 3First, based on the etching rate distribution map of the process chamber, determine the region with a faster etching rate (high etching rate region in the diagram), and confirm the angular range of the entire wafer occupied by this high etching rate region, for example, 'a'. The proportion of this range in the circumferential direction of the wafer is a / 360. Then, set the single wafer rotation angle to 'a' (equivalent to dividing the wafer into multiple angular regions, each with a central angle of 'a', and the angular regions are sequentially denoted as a1, a2, a3, ...). Based on the process conditions, set the total etching operation time (not the total time of the entire etching process) to 'T', and the single etching time to 't' (t = T * a / 360). Before etching begins, an angular region of the wafer, such as a1, is positioned within the high etching rate region of the process chamber. After etching begins, every etching time t, etching is paused, and the wafer is transferred outside the process chamber for cooling and rotation by angle a to calibrate its position. The wafer is then returned to the process chamber, and a new angular region, such as a2, is positioned within the high etching rate region... This cycle continues until every angular region of the wafer has been etched within the high etching rate region of the process chamber for t hours. This ensures that each region of the wafer experiences both a relatively fast etching rate and a relatively slow etching rate for the same amount of time, guaranteeing etching uniformity across the entire wafer.

[0068] Because wafer etching needs to be performed in a vacuum process chamber, while the position calibration (rotating the wafer to the required angle and other positional adjustments) and cooling after each etching are carried out in an atmospheric environment, the wafer needs to be transferred back and forth multiple times between the vacuum chamber and the front-end transport module in the atmospheric environment. For example... Figure 4-6 As shown, etching equipment in related technologies typically includes a process chamber, a transfer chamber, and a vacuum conversion chamber. The process chamber ( Figure 4 (as shown in PM) and the transmission chamber ( Figure 4 The region where VTM is located, Figure 5 and Figure 6 The PC cavity shown is connected to the front-end transfer module. The transfer chamber is typically connected to the front-end transfer module via a vacuum conversion chamber capable of switching between vacuum and atmospheric environments. That is, the vacuum conversion chamber is located between the process chamber and the front-end transfer module, connected to the process chamber on one side via valve b and to the front-end transfer module on the other side via valve a. The calibration mechanism (which performs position calibration operations such as angle adjustment on the wafer) is used for this purpose. Figure 4-6 The position calibration mechanism shown is located in the front-end transmission module. The specific etching process flow is as follows: Figure 7 As shown, the process is as follows:

[0069] First, a transport mechanism, such as an overhead crane, transports the wafer to the front-end transfer module. The front-end transfer module includes a wafer transport mechanism (e.g., a robotic arm, shown in the attached diagram, referred to herein as the atmospheric transport mechanism), a position calibration mechanism for wafer positioning, and a support mechanism to allow the wafer to cool naturally. The wafer undergoes initial position calibration at the position calibration mechanism, and then is transported by the atmospheric transport mechanism into a vacuum conversion chamber capable of switching between a vacuum environment and an atmospheric environment. The vacuum conversion chamber then transitions from an atmospheric environment to a vacuum environment (e.g., by evacuating the chamber to create a vacuum, which takes approximately 15 seconds). The vacuum conversion chamber then opens a valve connected to the transfer chamber (which is in a vacuum environment). The transport mechanism within the transfer chamber (shown in the attached diagram, referred to herein as the vacuum transport mechanism) retrieves the wafer and transfers it into the process chamber. After a single etching cycle of the wafer is completed, for example, etching time t, the vacuum transfer mechanism removes the wafer and returns it to the vacuum conversion chamber. The vacuum conversion chamber switches from a vacuum environment to an atmospheric environment (approximately 15 seconds if gas is introduced into the chamber). Then, the vacuum conversion chamber opens the valve connected to the front-end transfer module, and the atmospheric transfer mechanism removes the wafer from the vacuum conversion chamber and places it on a support mechanism for natural cooling, which takes approximately 180 seconds. Once cooled, the wafer is transferred to the position calibration mechanism for calibration, such as aligning with the alignment mark / initial position and rotating by an angle 'a'. The wafer then re-enters the process chamber via the vacuum conversion chamber for a single etching cycle of time t... This process is repeated multiple times (if the angle of a single etching area is 'a', 360 / 'a' etching cycles are required overall) to complete the wafer etching, thereby improving the uniformity of etching depth across all areas of the wafer.

[0070] It is evident that although the current etching process can ensure the uniformity of wafer etching by following the above operation, the entire process involves cumbersome transfer steps, long transfer time, long wafer natural cooling time, and a long total etching process time, resulting in slow manufacturing efficiency.

[0071] To at least partially address the aforementioned problems and shorten the total etching process time, embodiments of this application provide a semiconductor process apparatus for performing wafer etching processes. Please refer to... Figures 8-16 This semiconductor process equipment can optimize the overall fabrication process of wafer etching, shorten the transfer time and cooling time for multiple etching operations on a single wafer, thereby significantly reducing the overall time of the wafer etching process and improving manufacturing efficiency.

[0072] like Figure 8As shown, the semiconductor process equipment provided in this application includes a process chamber 5 and a position adjustment chamber 3. The process chamber 5 includes a chamber body, a support stage, an inlet assembly, an outlet assembly, etc., and is used to process wafers in a vacuum environment. The position adjustment chamber 3 includes a chamber body, an exhaust assembly, and a position adjustment assembly. The chamber body of the position adjustment chamber 3 is referred to as the adjustment chamber body 31, and the exhaust assembly is referred to as the first exhaust assembly 34.

[0073] The adjustment cavity body 31 is provided with a first gate valve 6 for connecting (directly or indirectly) to the process chamber 5 to transfer the wafer to the process chamber 5; the first vacuum assembly 34 is used to extract gas from the adjustment cavity body 31 to create a vacuum environment within the adjustment cavity body 31; the calibration end of the position adjustment assembly (such as the sensing assembly 33 and the rotation mechanism 32) is located inside the adjustment cavity body 31 to carry and calibrate the wafer, while the power end (including the power component 322) can be located outside the adjustment cavity body 31. The position adjustment assembly is used to detect the wafer's position information (such as the center and alignment marks) and rotate the wafer by a certain angle to stop the wafer at the target position (meaning to stop the angle region of the wafer that is about to be etched in the high etching rate region at a preset angle position). In this application, the semiconductor device is also provided with a transfer chamber 4, such as Figure 8 As shown, the transmission chamber 4 is equipped with a pumping / vacuum assembly to create a vacuum environment inside the transmission chamber 4, and is connected to the process chamber 5 through a valve; the vacuum transmission mechanism can be installed inside the transmission chamber 4, which is located between the position adjustment chamber 3 and the process chamber 5, and the position adjustment chamber 3 is connected to the transmission chamber 4 through the first gate valve 6.

[0074] When a wafer is transferred from process chamber 5 to position adjustment chamber 3, the valve between transfer chamber 4 and process chamber 5 opens, the vacuum transfer mechanism acquires the wafer from process chamber 5, and the first valve 6 of position adjustment chamber 3 opens (the timing of opening the first valve 6 is not unique and can be adjusted according to the situation), and the vacuum transfer mechanism sends the wafer into position adjustment chamber 3; when a wafer is transferred from position adjustment chamber 3 to process chamber 5, the first valve 6 opens, the vacuum transfer mechanism acquires the wafer from position adjustment chamber 3, and the valve between transfer chamber 4 and process chamber 5 opens (the timing of opening this valve is not unique and can be adjusted according to the situation), and the vacuum transfer mechanism sends the wafer into process chamber 5.

[0075] Thus, when the wafer has undergone one etching process in the process chamber 5 and there are still subsequent etching processes (i.e., each etching process except for the final etching process), the wafer can be directly transferred to the position adjustment chamber 3, which has formed a vacuum environment, through the vacuum transfer mechanism for direct angle adjustment, without having to transfer it to the front-end transfer module 1, which is in an atmospheric environment, for calibration. During the transfer, there is no need to switch between vacuum and atmospheric environments through the vacuum conversion chamber 2, saving transfer time.

[0076] Simultaneously, the semiconductor process equipment is also equipped with a cooling component 35 for cooling the wafer to reduce its temperature. Cooling the wafer using the cooling component 35 significantly shortens the cooling time compared to natural wafer cooling. For example, in the prior art, wafer cooling takes approximately 180 seconds, while using the cooling component 35 can reduce the cooling time to approximately 10 seconds. The cooling component 35 can be located on the position adjustment chamber 3, or on the transport path from the process chamber 5 to the position adjustment chamber 3, such as within the transport chamber 4, specifically in the wafer-carrying part of the vacuum transport mechanism. Thus, during wafer cooling, there is no need to return the wafer to the front-end transport module 1, which is in an atmospheric environment, for heat dissipation. The shorter transport path and reduced transport time, combined with the significantly shortened cooling time, significantly reduce the overall etching process time.

[0077] As described above, the semiconductor process equipment provided in this application, except for the final etching of the wafer, can enter the position adjustment chamber 3, which has already formed a vacuum environment, for position adjustment and calibration after a single etching process is completed in the wafer process chamber 5. During this transfer process or during calibration, the wafer is rapidly cooled by the cooling component 35. The wafer does not need to be transferred to the atmospheric environment for position adjustment and natural cooling. For example... Figure 9 As shown. With this configuration, firstly, this application optimizes the wafer transport path and fabrication steps in the etching process. Between two adjacent etching processes, the wafer does not need to undergo two vacuum and atmospheric environment transitions in the vacuum conversion chamber 2, reducing transport time. Secondly, the wafer is cooled by the cooling component 35, which significantly shortens the cooling time compared to natural cooling in the atmospheric environment. It is evident that the semiconductor process equipment provided by this application can significantly shorten the transport and cooling time for multiple etching processes on a single wafer, thereby significantly reducing the overall time of the wafer etching process and improving fabrication efficiency. Thirdly, compared to transporting the etched wafer multiple times to the front-end transport module 1 in the atmospheric environment, the semiconductor process equipment of this application can also prevent excessive diffusion of byproducts from the wafer surface to the front-end transport module 1, reducing the risk of byproduct contamination of the clean, un-etched wafers located in the front-end transport module 1, and improving contamination control performance.

[0078] The cooling component 35 can be a liquid cooling component or a gas-filled component that blows cooling gas. If the cooling component 35 is a liquid cooling component, it can be installed on the position adjustment chamber 3, or it can be installed on the transport path from the process chamber 5 to the position adjustment chamber 3, such as inside the transport chamber 4, specifically in the wafer-carrying part of the vacuum transport mechanism. In this way, when cooling the wafer between adjacent etching processes, it is not necessary to transport the wafer to the front-end transport module 1 to allow the wafer to cool naturally in the atmospheric environment, and the wafer will not enter the vacuum conversion chamber 2 during transport, thus avoiding environmental transition time.

[0079] If the cooling component 35 is a gas-filling component, preferably, the cooling component 35 is disposed on the position adjustment chamber 3. In this way, during wafer position calibration, cold gas can be filled into the position adjustment chamber 3 to cool the wafer. After cooling is complete (wafer cooling time preset or temperature reduced to a preset level), the first vacuum component 34 is used to remove the cooling gas from the chamber, restoring a vacuum environment inside the chamber. The first valve 6 can then be opened directly, and the wafer can still be directly transferred to the process chamber 5 using the vacuum transfer mechanism. With this configuration, the wafer position calibration operation and cooling operation can be started simultaneously or close to each other, with the time consumed by the two operations overlapping, further shortening the process time and further improving etching process efficiency and wafer fabrication efficiency.

[0080] When the cooling component 35 is a gas-filling component, the position adjustment chamber 3 can switch between a vacuum environment and an atmospheric environment. Therefore, in some embodiments, the position adjustment chamber 3 can replace the vacuum conversion chamber 2 or be combined with the vacuum conversion chamber 2. That is, the semiconductor equipment includes a front-end transfer module 1, a process chamber 5, a position adjustment chamber 3, and a transfer chamber 4. The adjustment chamber body 31 is also provided with a second valve for connecting to the front-end transfer module 1 (or for the atmospheric transfer mechanism of the front-end transfer module 1 to feed the wafer), and wafer transfer is performed through the second valve and the front-end transfer module 1. In this way, the semiconductor process equipment does not need to set up a vacuum conversion chamber 2, but instead sets up a position adjustment chamber 3 between the process chamber 5 and the front-end transfer module 1. The position adjustment chamber 3 is equipped with a position adjustment component, a gas-filling component, and a first gas-evacuation component 34, and the chamber can switch between a vacuum environment and an atmospheric environment. In this embodiment, the etching process steps are as follows: The position adjustment chamber 3 is in an atmospheric environment. The second valve of the position adjustment chamber 3 is opened, and the wafer to be etched for the first time is fed from the front-end transfer module 1 into the position adjustment chamber 3. Initial position calibration of the wafer is performed within the position adjustment chamber 3, while simultaneously extracting gas from the chamber to create a vacuum environment. Then, the first valve 6 is opened, and the wafer is fed into the process chamber 5 for the first etching. During the first etching, the position adjustment chamber 3 switches to a vacuum environment, and then the wafer... The wafer returns to position adjustment chamber 3 for position adjustment and cooling. After cooling, the cooling gas in position adjustment chamber 3 is evacuated to restore a vacuum environment. The wafer can then be sent to process chamber 5 for secondary etching. This process is repeated until the wafer completes its final etching process. Afterward, the wafer returns to position adjustment chamber 3, where cooling gas is injected to cool it and create an atmospheric environment. Once cooled, the second valve is opened, and the wafer, now etched, is transferred to front-end transfer module 1. This simple and rapid process completes the entire wafer etching process. This setup significantly simplifies the wafer transport path, reduces transport and cooling time, thus significantly shortening the overall etching process time and improving wafer etching and manufacturing efficiency. Furthermore, it simplifies the structure of semiconductor process equipment, reducing manufacturing costs.

[0081] Alternatively, in some embodiments, in addition to the position adjustment chamber 3, the semiconductor process equipment also includes a vacuum conversion chamber 2 located between the process chamber 5 and the front-end transfer module 1. For example... Figure 8As shown, the position adjustment chamber 3 and the vacuum conversion chamber 2 are two isolated and independent chambers. The vacuum conversion chamber 2 is equipped with a chamber body, a support platform, a second evacuation assembly, and a gas inlet assembly. The vacuum conversion chamber 2 is also equipped with a third valve 7 and a fourth valve 8. The third valve 7 is used to connect with the transfer chamber 4 to allow the wafer to be transferred between the vacuum conversion chamber 2 and the process chamber 5. The fourth valve 8 is used to connect with the front-end transfer module to allow the wafer to be transferred between the front-end transfer module 1 and the vacuum conversion chamber 2.

[0082] The position adjustment chamber 3 can be arranged side-by-side or stacked with the vacuum conversion chamber 2, both located on the same side of the process chamber 5 or the transfer chamber 4. Alternatively, the position adjustment chamber 3 and the vacuum conversion chamber 2 can be located on different sides of the process chamber 5 or the transfer chamber 4; the specific location is not limited in detail. In this embodiment, the semiconductor process equipment includes both the vacuum conversion chamber 2 and the position adjustment chamber 3, which are separated from each other. This arrangement, as shown... Figure 9 As shown, the etching process of this semiconductor process equipment is as follows: The wafer enters the process chamber 5 through the vacuum conversion chamber 2 for the first etching process. After the first etching is completed, it enters the position adjustment chamber 3 for position adjustment and cooling, and then returns to the process chamber 5 for the next etching. Except for the last etching, after each etching process, the wafer enters the position adjustment chamber 3 for position adjustment and cooling, and then directly returns to the process chamber 5 for the next etching. After the last etching of the wafer is completed, the wafer is transferred back to the front-end transmission module 1 through the vacuum conversion chamber 2.

[0083] The semiconductor process equipment in this embodiment has the following advantages: the transfer path is simple, and the overall etching time is shorter compared with the prior art; the total time of the overall etching process is the same compared with other embodiments of this application, and the volume settings of the vacuum conversion chamber 2 and the position adjustment chamber 3 can be considered independently. For example, the volume of the vacuum conversion chamber 2 can be set to be larger to accommodate two or more carrier stages, corresponding to multiple process chambers 5 for wafer transfer, thereby enabling batch transfer of wafers to improve manufacturing efficiency; and since the processes of each process chamber 5 are different, there is no need for multiple wafers to be adjusted simultaneously, so the volume of the position adjustment chamber 3 can be set to be smaller to avoid unnecessary increase in equipment volume, and the smaller volume of the position adjustment chamber 3 is filled with cooling gas to cool the wafer more efficiently and with shorter cooling time, thus further shortening the cooling time required for the wafer and the overall etching process time, and further improving wafer manufacturing efficiency.

[0084] Meanwhile, in such embodiments, the wafer is transferred to the process chamber 5 via the vacuum conversion chamber 2 for the first etching. To ensure the accuracy of the wafer's initial position upon entering the process chamber 5, in some embodiments, the front-end transfer module 1 of the semiconductor process equipment is also equipped with a position calibration mechanism 9. This position calibration mechanism 9 is used to perform initial position calibration on the wafer before the first etching. Compared to removing the wafer from the vacuum conversion chamber 2 and then sending it to the position adjustment chamber 3 for initial position calibration, and then sending it into the process chamber 5 for the first etching, this configuration provides a more optimized and simpler transfer path, reduces the time required, and further improves wafer fabrication efficiency.

[0085] The position calibration mechanism 9 has the same function as the position adjustment component: to adjust the wafer angle and calibrate the wafer's position information. Their structures can be the same; however, depending on specific requirements, their structures can also be different.

[0086] The composition of the position adjustment component, the position calibration mechanism 9, the cooling component 35, the first air extraction component 34, and the second air extraction component will be described below.

[0087] The position adjustment assembly includes a rotation mechanism 32 and a sensing component 33. The rotation mechanism 32 carries the wafer and rotates it. The sensing component 33 detects the wafer's position information, which includes at least the starting position of the angle region on the wafer to be etched at high speed. Typically, an alignment mark, such as a small notch, can be set on the wafer. By detecting the alignment mark, the angle position of each region on the wafer can be detected. Based on the angle position of the alignment mark, the wafer is rotated by an appropriate angle (e.g., after the first etching, if the wafer does not rotate during transport, it can be rotated by an angle 'a'; after the second etching, it can be rotated by an angle 'a' again). This allows the angle region on the wafer to be etched at high speed to stop at a preset target position. The vacuum transport mechanism, based on the adjusted wafer position information, acquires the wafer and sends it into the process chamber, thus placing the angle region on the wafer to be etched at high speed in the high etching rate region of the process chamber. Furthermore, to prevent misalignment of the wafer during transport before entering the position adjustment chamber 3 or misalignment caused by airflow within the process chamber 5, the sensing component 33 is also used to detect the center position of the wafer, so that the control system can accurately recalibrate the wafer center position. Thus, based on the calibrated position information, the vacuum transport mechanism can support the wafer at an accurate angle and position. After the wafer is placed on the support stage within the process chamber 5, the angle region a1 (where the high-speed etching angle is a, and the wafer is divided into 360 / a angle regions, which can be sequentially denoted as a1, a2, a3...) of the wafer, which was subjected to high-speed etching in the previous etching process, has been transferred out of the high etching rate region of the process chamber 5. Meanwhile, the next angle region a2 of the wafer, which is adjacent to angle region a1, is precisely located within the high etching rate region of the process chamber 5.

[0088] Therefore, in some embodiments of this application, the sensing component 33 is used to detect the alignment mark and center information of the wafer and transmit the detection information to the control system; the rotating mechanism 32 is electrically connected to the control system and drives the wafer to rotate based on the alignment mark so that the wafer stops at the target position.

[0089] Specifically, please refer to the following: Figures 10-13 The rotating mechanism 32 includes a support member and a power member 322 for driving the support member to rotate. The support member includes an adjusting support platform 321 and a rotating shaft connected to the adjusting support platform 321, with the rotating shaft being drively connected to the power member 322. The adjusting support platform 321 is disposed within the position adjustment chamber 3, and the power member 322 is disposed outside the position adjustment chamber 3, specifically a power device such as a motor, hydraulic cylinder, pneumatic cylinder, or electric motor. The adjusting support platform 321 includes multiple support portions 3211 distributed along the rotational circumference, for example... Figure 10 , Figure 11 and Figure 12The three support parts 3211 shown can be strip-shaped support plates, or support columns or support claws located at the ends of the crossbars. Meanwhile, the adjusting support platform 321 is equipped with a positioning structure to prevent wafer misalignment. This positioning structure can be a positioning groove or positioning stop on the adjusting support platform 321, or a friction pad 3212 laid on each support part 3211. The positioning structure can also be an adsorption structure for adsorbing the wafer, such as an electrostatic adsorption assembly; these will not be described in detail here.

[0090] Please refer to this as well. Figure 12 and Figure 14 In some embodiments, the sensing component 33 includes a light-emitting element 331 and a sensor 332. The light-emitting element 331 is disposed above the wafer, for example, it can be fixed to the top plate of the position adjustment chamber 3, and the light-emitting element 331 illuminates the edge of the wafer from above. The sensor 332 is disposed below the wafer, specifically it can be fixed to the bottom plate of the position adjustment chamber 3, corresponding to the edge position of the wafer, for example, perpendicular to the edge position of the wafer. The sensor 332 senses the contour information of the wafer by receiving the light source signal from the light-emitting element 331, and transmits the information to the control system so that the control system can position the alignment mark and the center of the wafer. Specifically, the light-emitting element 331 may include a light source 3311 and a light mirror 3312 that converts the light from the light source 3311 into parallel light, so that the light illuminates the wafer uniformly and perpendicularly, which can improve the measurement accuracy. Correspondingly, the sensor 332 may be a pattern sensor, which generates a pattern signal by receiving the light signal. In this way, the sensing component 33 can accurately and quickly detect the position information of the wafer.

[0091] like Figure 13 and Figure 14 As shown, when the rotating mechanism 32 rotates with the wafer, the light source 3311 of the light-emitting element 331 emits light downwards above the wafer. The light is converted into parallel light by the light mirror 3312 and illuminates the edge of the wafer perpendicularly. The sensor 332 below the wafer receives the light source signal, generates a graphic signal representing the edge of the wafer, and sends the graphic signal to the control system. The control system will form a wafer outline graphic signal, in which the alignment mark formed by the notch will be different from the signal at other positions. After the wafer rotates several times, the control system will calculate the angular position of the alignment mark and the position of the wafer center based on the graphic signal. Then, based on the alignment mark, it will control the rotating mechanism 32 to rotate a certain angle so that the wafer stops at the target position. Using the wafer center position as coordinates, the vacuum transfer mechanism accurately acquires and transfers the wafer into the process chamber 5, and places an angled area of ​​the wafer to be etched at high speed in the high etching rate area of ​​the process chamber 5.

[0092] Of course, in other embodiments, the light-emitting element 331 can be a laser generator, and correspondingly, the sensor 332 is a laser receiver.

[0093] In some other embodiments, the sensing component 33 may be a contour scanner or a pressure sensor / gravity sensor set under the adjustment stage 321 of the position adjustment component. The control system can also obtain the angular position of the alignment mark and the center position of the wafer through the scanned contour information or the pressure / gravity information sent by the sensor.

[0094] The position calibration mechanism 9 set in the front-end transmission module 1 can have the same composition and structure as the position adjustment component described above, and will not be described again here.

[0095] like Figure 11 As shown, the adjustment cavity body 31 may include a cavity top cover 311 and a cavity bottom cover 312 that are fastened together to form an inner cavity. The cavity top cover 311 may include a top plate and side plates arranged circumferentially along the top plate, while the cavity bottom cover 312 only includes a bottom plate; thus, the air inlet, air outlet, pressure detection port, and calibration end of the position adjustment component (e.g., the adjustment support stage 321 with the wafer rotating) can be conveniently set on the cavity bottom cover 312, simplifying manufacturing.

[0096] like Figure 15 As shown, the first vacuum assembly 34 may specifically include a vacuum pipeline. The vacuum pipeline 340 is equipped with a vacuum gauge 341, a vacuum switch 343, a first diaphragm valve 342, etc. The vacuum pipeline 340 is connected to the air outlet on the adjustment chamber body 31, and the pressure detection port of the vacuum gauge 341 is connected to the pressure detection port of the adjustment chamber body 31 through a pressure detection tube to detect the pressure inside the position adjustment chamber 3.

[0097] like Figure 16 As shown, the cooling component 35 is preferably an air-filling component and is disposed on the position adjustment chamber 3. The air-filling component may specifically include a cold air pipe 350 connected to a cooling air source, the cold air pipe 350 being connected to an air inlet on the adjustment chamber body 31, and the pipe being provided with a second diaphragm valve 351, a filter 352, a one-way valve 353, and a diffuser 354 for dispersing airflow into the position adjustment chamber 3, etc.

[0098] The chamber body of the vacuum conversion chamber 2 can also include an upper cover and a bottom cover that are fastened together to form the inner cavity of the chamber. The bottom cover is provided with an air inlet, an air outlet, and a pressure detection hole. The structure of the chamber body of the vacuum conversion chamber 2 can be the same as that of the adjustment chamber body 31, and will not be described again here. The air inlet assembly and the air filling assembly can have the same piping structure except for the air source; the composition structure of the second air extraction assembly can be the same as that of the first air extraction assembly 34; and will not be described again here.

[0099] Embodiments of this application also provide a semiconductor process apparatus for performing wafer etching processes, aiming to reduce the total etching time. The apparatus includes a front-end transfer module 1, a vacuum conversion chamber 2, a transfer chamber 4, a process chamber 5, and a position adjustment chamber 3. The process chamber 5 is used for wafer processing. The transfer chamber 4 is connected to the process chamber 5 and is used to transfer the wafer to the process chamber 5; a valve is provided between the two. The vacuum conversion chamber 2 is located between the transfer chamber 4 and the front-end transfer module 1. One side of the vacuum conversion chamber 2 is connected to the transfer chamber 4, and the other side is connected to the front-end transfer module 1. A third valve 7 is provided between the vacuum conversion chamber 2 and the transfer chamber 4 to connect or block the connection between them. A fourth valve 8 is also provided on the vacuum conversion chamber 2 to connect to the front-end transfer module 1. Therefore, the vacuum conversion chamber 2 can transfer wafers both with the front-end transfer module 1 and through the transfer chamber 4 and the process chamber 5.

[0100] The position adjustment chamber 3 is connected to the transmission chamber 4 and is either connected to or separated from the transmission chamber 4 via the first valve 6. The position adjustment chamber 3 is isolated from the front-end transmission module 1, meaning that the position adjustment chamber 3 only transmits wafers with the transmission chamber 4. A position adjustment component is installed within the chamber body of the position adjustment chamber 3. This component detects the wafer's position information and rotates the wafer to stop it at the target position.

[0101] This configuration incorporates a position adjustment component along the wafer's transport path, which creates a vacuum environment. After exiting the process chamber 5, the wafer does not return to the front-end transport module 1, which is in an atmospheric environment, for angle adjustment. Instead, it travels to a position adjustment chamber 3, which is specifically equipped with the position adjustment component, to achieve the desired angle. Once the adjustment is complete, the wafer can directly return from the position adjustment chamber 3 to the process chamber 5 for the next etching process. This optimizes the wafer's transport path and fabrication steps in the etching process. Between two adjacent etching processes, the wafer does not need to undergo two transitions between vacuum and atmospheric environments, reducing transport time and improving the wafer's fabrication efficiency in the etching process.

[0102] Specifically, the position adjustment chamber 3 and the vacuum conversion chamber 2 can be arranged side by side, located on the same side of the transmission chamber 4. The position adjustment chamber 3 includes an adjustment chamber body 31, with the position adjustment assembly located inside the adjustment chamber body 31, and a first valve 6 disposed on the adjustment chamber body 31. The position adjustment chamber 3 may also be provided with a first evacuation assembly 34 for evacuating air from the adjustment chamber body 31 to create a vacuum environment inside the adjustment chamber body 31. In this way, a vacuum environment can be quickly created in the position adjustment chamber 3 without the need for a vacuum assembly in the transmission chamber 4, thus shortening the time required.

[0103] In a further embodiment, the semiconductor process equipment is further provided with a cooling assembly 35, which is preferably disposed within the position adjustment chamber 3. The cooling assembly 35 can be a liquid cooling assembly or a gas cooling assembly, and is preferably configured as a gas filling assembly that fills the adjustment chamber body 31 of the position adjustment chamber 3 with cooling gas.

[0104] The specific composition of the first air extraction component 34, the cooling component 35, and the position adjustment component can be the same as in the above embodiments. For example, the position adjustment component includes a rotating mechanism 32 and a sensing component 33, which will not be described again here.

[0105] like Figure 9 As shown, embodiments of this application also provide a wafer processing method suitable for the above-described semiconductor process equipment, the method comprising:

[0106] The wafer that has completed the previous process is directly transferred from the process chamber 5 to the position adjustment chamber 3; for example, after the wafer is obtained from the process chamber 5, it is directly sent into the position adjustment chamber 3 through the vacuum transfer mechanism in the transfer chamber 4 located between the process chamber 5 and the position adjustment chamber 3, without being sent into or transferred to other chambers or other locations (such as vacuum conversion chambers or front-end transfer modules, etc.).

[0107] The wafer is rotated to the target position using a positioning adjustment component;

[0108] The rotated wafer is transferred to process chamber 5 to perform the next process.

[0109] With this setup, after the wafer exits the process chamber 5, it does not return to the front-end transport module 1, which is in an atmospheric environment, for angle adjustment. Instead, it goes to the position adjustment chamber 3, which is specially equipped with a position adjustment component, to achieve the angle adjustment. After the adjustment is completed, it can directly return from the position adjustment chamber 3 to the process chamber 5 for the next etching process. This optimizes the wafer transport path and manufacturing steps in the etching process. Between two adjacent etching processes, the wafer does not need to undergo two conversions between vacuum and atmospheric environments, reducing transport time and improving the wafer manufacturing efficiency in the etching process.

[0110] Specifically, in some embodiments, the steps may include: (the specific order of the steps is not limited)

[0111] Step 1: Transfer the wafer from the front-end transfer module 1 to the position adjustment chamber 3 or vacuum conversion chamber 2, which can form a vacuum environment;

[0112] Based on the initial or original position information of the control system wafer, the atmospheric transmission mechanism accurately acquires the wafer and sends it into the position adjustment chamber 3 or the vacuum conversion chamber 2. Specifically, when the semiconductor equipment does not have a vacuum conversion chamber 2, and the position adjustment chamber 3 and the front-end transmission module 1 transmit the wafer, the wafer to be etched for the first time is sent into the position adjustment chamber 3. When the semiconductor process equipment has both a vacuum conversion chamber 2 and a position adjustment chamber 3, the wafer to be etched for the first time is sent into the vacuum conversion chamber 2.

[0113] Step 2: Send the wafer into process chamber 5 for single-process handling;

[0114] The vacuum transfer mechanism accurately acquires the wafer based on the coordinate information of the control system and sends the wafer into the process chamber 5, ensuring that the angle area of ​​the wafer that needs to be etched at high speed is in the high etching rate area of ​​the process chamber 5; then the vacuum transfer mechanism withdraws from the process chamber 5, the process chamber 5 is closed, and the wafer is etched in a single pass.

[0115] Step 3: Create a vacuum environment in position adjustment chamber 3;

[0116] The first pumping component 34 extracts the gas in the position adjustment chamber 3, creating a vacuum environment within the position adjustment chamber 3. In semiconductor process equipment, the position adjustment chamber 3 and the front-end transfer module 1 transfer wafers, and the initial vacuum environment of the position adjustment chamber 3 is generally created after the wafer is sent into the process chamber 5 and before it is removed from the process chamber 5. If the semiconductor process equipment is equipped with both a vacuum conversion chamber 2 and a position adjustment chamber 3, the initial vacuum environment of the position adjustment chamber 3 can be created after the start of the entire etching process and before the first wafer is removed from the process chamber 5.

[0117] Step 4: The wafer that has completed a single process is moved from the process chamber 5 to the position adjustment chamber 3 for position adjustment;

[0118] The wafer in the process chamber 5 is sent into the position adjustment chamber 3 by the vacuum transfer mechanism for angle adjustment;

[0119] Step 5: Cool the wafer;

[0120] The cooling position of the wafer is determined according to the location of the cooling component 35, for example, in the transfer chamber 4 equipped with a vacuum transfer mechanism, or in the position adjustment chamber 3.

[0121] Step 6: After the wafer has been angled and cooled, it is sent into process chamber 5 for secondary processing.

[0122] The control system uses the coordinate information after the wafer angle is adjusted as a basis to enable the vacuum transmission mechanism to accurately acquire the wafer and, after placing the wafer into the process chamber 5, make the angle region of the wafer to be etched at high speed, such as a2, located in the high etching rate region of the process chamber 5.

[0123] Repeat steps 4-6 until the wafer completes the final etching process;

[0124] Step 7: After the process of a single wafer is completed, the wafer is transferred back to the front-end transmission module 1.

[0125] Furthermore, in some embodiments, the wafer processing method includes:

[0126] Step 1 is actually: after the front-end transmission module 1 performs the initial position calibration of the wafer, the wafer is sent into the vacuum conversion chamber 2;

[0127] At this time, the vacuum conversion chamber 2 is in an atmospheric environment through the inflation function of the air intake assembly;

[0128] Step 1': Evacuate the vacuum conversion chamber 2;

[0129] The second pumping assembly is used to extract the gas in the vacuum conversion chamber 2, so that a vacuum environment is formed in the vacuum conversion chamber 2.

[0130] Step 2: The wafer is sent into process chamber 5 for a single process.

[0131] Steps 3-6 above;

[0132] Step 7 is actually: After the process of a single wafer is completed, the wafer is transferred back to the front-end transmission module 1 through the vacuum conversion chamber 2.

[0133] Once the wafer completes the final etching process, the overall etching process is finished. The vacuum conversion chamber 2 is then made to form a vacuum environment and the fourth valve 8 is opened. The vacuum transfer mechanism sends the wafer into the vacuum conversion chamber 2. Then, the vacuum conversion chamber 2 forms an atmospheric environment through the air intake component. Subsequently, the third valve 7 is opened, and the atmospheric transfer mechanism obtains the wafer and places it on the front-end transfer module 1. Specifically, this can be the position used in the next process step to obtain the wafer from the front-end transfer module 1.

[0134] Furthermore, after transferring the wafer that has completed the previous process from process chamber 5 to position adjustment chamber 3, the wafer processing method further includes:

[0135] The wafer is cooled by cooling component 35.

[0136] Alternatively, when the wafer is positioned in the positioning chamber 3, the wafer is cooled by the cooling assembly 35.

[0137] Furthermore, in some embodiments, step 5 actually includes:

[0138] Step 501: Cooling gas is introduced into the position adjustment chamber 3 through the cooling assembly 35 to cool the wafer;

[0139] When the wafer is being positioned in the positioning chamber 3, the gas filling assembly blows cooling gas into the positioning chamber 3 to cool the wafer.

[0140] Step 502: After cooling is complete, extract the cooling gas from the position adjustment chamber 3 to create a vacuum environment in the position adjustment chamber 3;

[0141] Once the wafer has cooled for a predetermined time, or once the temperature sensor detects that the wafer has cooled to a preset temperature, the first pumping assembly 34 is used to extract the cooling gas from the position adjustment chamber 3, thereby creating a vacuum environment in the position adjustment chamber 3.

[0142] Step 503: The cooled wafer is sent into the process chamber 5.

[0143] Once the position adjustment chamber 3 forms a vacuum environment, the first gate valve 6 is opened, the vacuum transmission mechanism acquires the wafer in the position adjustment chamber 3, and sends the wafer into the process chamber 5.

[0144] The above-mentioned wafer processing method shortens the overall time for wafer etching and improves wafer fabrication efficiency. Its core idea is consistent with the core idea of ​​the semiconductor process equipment in the foregoing embodiments of this application. For the derivation of effects not described in detail, please refer to the previous text.

[0145] The basic principles of this application have been described above with reference to specific embodiments. However, it should be noted that the advantages, benefits, and effects mentioned in this application are merely examples and not limitations, and should not be considered as essential features of each embodiment of this application. Furthermore, the specific details disclosed above are for illustrative and facilitative purposes only, and are not limitations. These details do not limit the application to the necessity of employing the aforementioned specific details for implementation.

[0146] The components and devices described in this application are merely illustrative examples and are not intended to require or imply that they must be connected, arranged, or configured in the manner shown in the accompanying drawings. As those skilled in the art will recognize, these components and devices can be connected, arranged, and configured in any manner. Words such as “comprising,” “including,” “having,” etc., are open-ended terms meaning “including but not limited to,” and are used interchangeably with them. The terms “or” and “and” as used herein refer to the words “and / or,” and are used interchangeably with them unless the context clearly indicates otherwise. The term “such as” as used herein refers to the phrase “such as but not limited to,” and is used interchangeably with it.

Claims

1. A semiconductor process apparatus, characterized in that, It includes a process chamber and a position adjustment chamber, wherein the process chamber is used to process the wafer in a vacuum environment; The position adjustment chamber includes: The cavity body is adjusted and equipped with a first gate valve for transferring wafers to the process chamber; A vacuum assembly, connected to the adjustment cavity body, is used to create a vacuum environment within the adjustment cavity body; A position adjustment component is disposed inside the adjustment cavity body and is used to detect the position information of the wafer and drive the wafer to rotate so that the wafer stops at the target position. The semiconductor process equipment further includes a cooling assembly for cooling the wafer, the cooling assembly being disposed in the position adjustment chamber or on the transport path from the process chamber to the position adjustment chamber.

2. The semiconductor process equipment as described in claim 1, characterized in that, The cooling assembly is disposed in the position adjustment chamber to provide cooling during wafer position adjustment.

3. The semiconductor process equipment as described in claim 2, characterized in that, The cooling assembly includes an inflation assembly that blows cooling gas into the adjustment cavity body.

4. The semiconductor process equipment as described in any one of claims 1-3, characterized in that, It also includes a vacuum conversion chamber and a front-end transmission module; The vacuum conversion chamber can switch between vacuum and atmospheric environments, and one side is connected to the process chamber via a third valve, while the other side is connected to the front-end transmission module via a fourth valve.

5. The semiconductor process equipment as described in claim 4, characterized in that, It also includes a front-end transmission module; the front-end transmission module is further equipped with a position calibration mechanism to perform initial position calibration on the wafer before it first enters the process chamber.

6. The semiconductor process equipment as described in claim 3, characterized in that, It also includes a front-end transfer module for transferring wafers in an atmospheric environment; the position adjustment chamber is located between the process chamber and the front-end transfer module, and is provided with a second gate valve that can transfer wafers with the front-end transfer module.

7. The semiconductor process equipment as described in claim 1, characterized in that, The position adjustment component includes: Sensing components are used to detect the alignment marks and center position of the wafer and transmit the detection information to the control system; The rotating mechanism, electrically connected to the control system, is used to carry the wafer and rotate it based on its initial position so that the wafer stops at the target position.

8. The semiconductor process equipment as described in claim 7, characterized in that, The sensing component includes: The light-emitting element illuminates the edge of the wafer from one side; The sensor senses the outline information of the wafer by receiving the light source signal from the light-emitting element, and transmits the information to the control system so that the control system can position the alignment mark and the center of the wafer.

9. The semiconductor process equipment as described in claim 8, characterized in that, The light-emitting element includes a light source and a light mirror that converts the light from the light source into parallel light, and the sensor is a graphic sensor.

10. The semiconductor process equipment as described in claim 7, characterized in that, The rotating mechanism includes: Adjust the support platform, including multiple support sections distributed along the circumference of the wafer; The power component drives the adjustment support platform to rotate; The positioning structure may be a positioning stop or positioning groove set on the adjustment support platform, or a friction pad laid on the support part, or an adsorption structure for adsorbing wafers.

11. A semiconductor process apparatus, characterized in that, It includes a front-end transmission module, a vacuum conversion chamber, a transmission chamber, a process chamber, and a position adjustment chamber. The process chamber is used to perform process processing on the wafer, and the transmission chamber is connected to the process chamber. One side of the vacuum conversion chamber is connected to the transmission chamber via a third valve and is equipped with a third valve for isolating the connection; the other side is connected to the front-end transmission module via a fourth valve. The position adjustment chamber is connected to the transmission chamber via a first valve and is isolated from the front-end transmission module. A position adjustment component is provided in the adjustment chamber body of the position adjustment chamber. The position adjustment component is used to detect the position information of the wafer and drive the wafer to rotate so that the wafer stops at the target position.

12. A wafer processing method, characterized in that, The method, applicable to the semiconductor process apparatus of any one of claims 1-10, comprises: The wafer that has completed the previous process is directly transferred from the process chamber to the position adjustment chamber; The wafer is rotated to the target position using the position adjustment component. The rotated wafer is transferred to the process chamber to perform the next process.

13. The wafer processing method as described in claim 12, characterized in that, After transferring the wafer that has completed the previous process from the process chamber to the position adjustment chamber, the process further includes: The wafer is cooled by the cooling assembly.

14. The wafer processing method as described in claim 13, characterized in that, Also includes: The wafer is cooled by introducing cooling gas into the position adjustment chamber through the cooling assembly. After cooling is complete, the cooling gas in the position adjustment chamber is extracted to create a vacuum environment in the position adjustment chamber.

Images