Method for improving raman gain coefficient of tellurite glass

Abstract

This invention discloses a method for improving the Raman gain coefficient of tellurate glass. By introducing Ga2O3 into a TeO2-BaF2-Y2O3 tellurate glass matrix, Ga ions enter the glass network and form [GaO4] tetrahedral structural units. These Ga ions then form a Te-O-Ga connection structure with the tellurium oxygen structural units through bridging oxygen bonds, thereby controlling the glass network structure and increasing the proportion of non-bridging oxygen. Raman spectroscopy results show that at 789 cm⁻¹... ‑1 The Te-O-Te vibration peak is enhanced at 480 cm⁻¹. ‑1 Vibrational characteristic peaks associated with the Te-O-Ga structure appear at a certain point. A peak intensity ratio evaluation function is constructed to quantitatively evaluate the glass structure, thereby obtaining tellurate glass materials with high Raman gain coefficients. Through structural tuning, the synergistic enhancement of the two main Raman vibrational modes can be achieved, thus significantly improving the Raman gain coefficient of tellurate glass.

Claims

1. A method for improving the Raman gain coefficient of tellurate glass, characterized in that, It includes the following steps: S1: Prepare raw materials of TeO2, BaF2 and Y2O3 according to a predetermined molar ratio to form a tellurite glass matrix; S2: Introduce Ga2O3 into the tellurite glass matrix and adjust the molar content of each component so that the total molar content of the glass system is 100 mol% to form a TeO2-BaF2-Y2O3-Ga2O3 tellurite glass system; S3: Carry out melting preparation on the TeO2-BaF2-Y2O3-Ga2O3 tellurite glass system, enable Ga2O3 to participate in the construction of the glass network and form a [GaO4] tetrahedral structural unit, and the [GaO4] tetrahedral structural unit forms a Te-O-Ga bridging oxygen bond with the tellurium-oxygen structural unit through a corner-sharing connection manner, thereby promoting the transformation of the [TeO4] trigonal bipyramid structure to the [TeO3] trigonal pyramid structure in the glass structure to increase the content of non-bridging oxygen bonds in the glass network; S4: The glass at 789 cm⁻¹ was obtained by Raman spectroscopy. -1 Raman peak intensity I at the location 789 and at 480cm -1 Raman peak intensity I at the location 480 And calculate the peak intensity ratio G, where, ， Taking the peak intensity ratio G as the criterion for the degree of regulation of the glass network structure, when the following relationship is satisfied: G≥1.2G0; it characterizes that the conversion degree of the [TeO4] structure to the [TeO3] structure in the glass network is increased and the content of non-bridging oxygen bonds is increased; where G0 is the peak intensity ratio of the glass without Ga2O3 doping; S5: 789cm based on step S4 -1 Raman peak intensity I at the location 789 and at 480cm -1 Raman peak intensity I at the location 480 The Raman gain enhancement potential of tellurate glass was evaluated, and a structural enhancement evaluation function F was constructed, with the following expression: ， in, For undoped Ga2O3 glass at 789 cm⁻¹ -1 The Raman peak intensity at the point is determined; when F≥1.44, the obtained tellurate glass is determined to have Raman gain enhancement potential; when the above conditions are not met, the amount of Ga2O3 introduced is adjusted.

2. The method according to claim 1, characterized in that, The molar percentages of each component in the TeO2-BaF2-Y2O3-Ga2O3 tellurite glass system are as follows: TeO2: 60-90 mol%; BaF2: 0-30 mol%; Y2O3: 0-10 mol%; Ga2O3: 0<x≤10 mol %, and the sum of the molar contents of each component is 100 mol%.

3. The method according to claim 2, characterized in that, In Raman spectra, 480 cm⁻¹ -1 The nearby characteristic peaks correspond to the Te-O-Ga bridging oxygen vibration mode, and their enhanced intensity indicates that Ga2O3 participates in the construction of the glass network and forms a Te-O-Ga structural connection.

4. A high Raman gain tellurate glass, characterized in that, The high Raman gain tellurite glass is prepared by the method described in any one of claims 1-3, and its Raman spectrum satisfies the following relationship: 。 5. A Raman gain optical fiber, characterized in that, It includes a core and a cladding, and the core is the high Raman gain tellurite glass described in claim 4.

6. A Raman fiber amplifier, characterized in that, It includes a signal light source, a pump light source, a signal optical isolator, a pump optical isolator, a wavelength division multiplexer, a gain fiber and an output optical isolator; wherein, the gain fiber is the Raman gain fiber described in claim 5.

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