Seed crystal pressing device and adhesive sintering device

Abstract

This application discloses a seed crystal pressure application device and a bonding sintering device. The seed crystal pressure application device includes: a base, a mounting bracket, an operating part, a first pressure plate, a second pressure plate, and a pressure lump. The base has a supporting part for carrying the seed crystal. The mounting bracket is fixedly connected to the base, and the mounting bracket has an inner cavity and a mounting cavity located around the inner cavity. The operating part is fixedly connected to the mounting bracket via a screw, the axial direction of the screw being the axial direction of the mounting bracket. The first pressure plate includes a connecting part and a pressure part, the connecting part and the screw being threadedly engaged. There are at least two pressure parts distributed circumferentially along the connecting part. One end of the pressure part is fixedly connected to the connecting part, and the other end of the pressure part is movably disposed in the mounting cavity along the axial direction of the mounting bracket. The second pressure plate, the pressure lump, and the supporting part are all disposed in the inner cavity. The second pressure plate is connected to the pressure part, and the second pressure plate is used to apply pressure to the pressure lump, which in turn applies pressure to the seed crystal. The seed crystal pressure application device improves the uniformity of the sintering pressure distribution on the seed crystal surface.

Description

Technical Field

[0001] This application relates to the field of silicon carbide crystal growth technology, and more specifically, to a seed crystal pressure device and a bonding and sintering device. Background Technology

[0002] Due to its wide bandgap, high breakdown electric field, and high thermal conductivity, silicon carbide is experiencing a surge in demand for applications in high-end equipment fields such as new energy vehicles, rail transportation, and aerospace.

[0003] The preparation of silicon carbide single crystals is the core prerequisite for the industrial application of silicon carbide, and the bonding and sintering process between the seed crystal and the substrate directly determines the crystallization quality, dimensional stability and yield of single crystal growth.

[0004] During the bonding and sintering process between the seed crystal and the substrate, pressure needs to be applied to the seed crystal. Usually, single-point or local pressure is applied, which results in poor uniformity of sintering pressure distribution on the seed crystal surface. This is especially true for large-sized seed crystals, which seriously affects the crystallization quality of single crystal growth.

[0005] In addition, the pressing method is usually used, which uses the pressure of the pressing mass itself to apply pressure to the seed crystal. This results in a large pressing mass volume, which occupies a large space in the sintering furnace, thus reducing the efficiency of the sintering furnace equipment.

[0006] In summary, how to apply pressure to the seed crystal to improve the uniformity of sintering pressure distribution on the seed crystal surface is a problem that urgently needs to be solved by those skilled in the art. Summary of the Invention

[0007] In view of this, the purpose of this application is to provide a seed crystal pressure application device and a bonding sintering device to improve the uniformity of the sintering pressure distribution on the seed crystal surface.

[0008] To achieve the above objectives, this application provides the following technical solution:

[0009] A seed crystal pressure application device includes: a base, a mounting bracket, an operating part, a first pressure plate, a second pressure plate, and a pressure block;

[0010] The base has a support portion for supporting the seed crystal;

[0011] The mounting bracket is used for fixed connection with the base, and the mounting bracket has an inner cavity and a mounting cavity, with the mounting cavity located on the periphery of the inner cavity;

[0012] The operating part is fixedly connected to the mounting bracket by a screw, and the axial direction of the screw is the same as the axial direction of the mounting bracket.

[0013] The first pressure plate includes a connecting part and a pressure part. The connecting part is threadedly engaged with the screw. There are at least two pressure parts distributed circumferentially along the connecting part. One end of the pressure part is fixedly connected to the connecting part, and the other end of the pressure part is movably disposed in the mounting cavity along the axial direction of the mounting bracket.

[0014] The second pressure plate, the pressure block, and the supporting part are all disposed in the inner cavity. The second pressure plate and the pressure part are connected. The second pressure plate is used to apply pressure to the pressure block, and the pressure block is used to apply pressure to the seed crystal.

[0015] Optionally, the mounting bracket includes a mounting frame and a mounting plate. The mounting frame is an annular structure that encloses an inner cavity. The mounting frame has a top end and a bottom end along its axial direction. The bottom end is used to be fixedly connected to the base support. The top end is fixedly connected to the mounting plate. The mounting cavity is located in the mounting frame and is arranged along the circumference and axial direction of the mounting frame. The mounting plate is fixedly connected to the screw.

[0016] And / or, the pressure-applying part and the mounting cavity slide together.

[0017] Optionally, the mounting bracket is provided with a positioning ring located in the inner cavity. The positioning ring is distributed around the periphery of the compression block and is positioned and engaged with the compression block along the radial direction of the mounting bracket. The radial direction of the mounting bracket is perpendicular to the axial direction of the mounting bracket.

[0018] Optionally, the positioning ring and the pressing block are fitted with a clearance, and the inner wall of the positioning ring is provided with an anti-stick coating.

[0019] Optionally, an elastic element is provided inside the mounting cavity. The elastic element is located on the bottom side of the pressure-applying part. The second pressure-applying plate is connected to the pressure-applying part through the elastic element. The elastic element can elastically deform along the axial direction of the mounting bracket.

[0020] Optionally, the seed crystal pressure device further includes a pressure sensor, which is disposed between the second pressure plate and the pressure block.

[0021] Optionally, the pressure sensors are arranged in groups, with at least two groups distributed along the circumference of the pressure mass, and each group of pressure sensors includes at least one pressure sensor.

[0022] Wherein, in the case that each group of pressure sensors includes at least two pressure sensors, any two pressure sensors in each group are distributed radially along the pressure mass.

[0023] Optionally, the seed crystal pressure application device further includes a display, which is connected to the pressure sensor. The display is used to display a pressure value, which is the average of the detection values ​​of all groups.

[0024] When each group of pressure sensors includes at least two pressure sensors, the detection value of each group is the average of the detection values ​​of all pressure sensors in the group.

[0025] Optionally, one of the operating part and the mounting bracket is provided with a pressure scale, and the other is provided with an indicator corresponding to the pressure scale, wherein the pressure scale is provided along the circumference of the operating part;

[0026] And / or, the operating part is provided with an anti-slip structure;

[0027] And / or, the operating part is a circular handle;

[0028] And / or, the operating part includes: an operating part body, and an operating part outer layer covering the operating part body; wherein, the operating part outer layer is an insulating and high-temperature resistant layer;

[0029] And / or, the base is a graphite component.

[0030] Based on the seed crystal pressure device provided above, this application also provides a bonding and sintering device, which includes a sintering furnace and the seed crystal pressure device described in any one of the above claims, wherein the seed crystal pressure device is located inside the sintering furnace.

[0031] Optionally, the bonding and sintering device further includes a support bracket, and there are at least two seed crystal pressing devices. The at least two seed crystal pressing devices are distributed along the height direction of the support bracket, and the height direction of the support bracket is the axial direction of the mounting bracket of the seed crystal pressing device.

[0032] In the seed crystal pressure device provided in this application, since there are at least two pressure-applying parts in the first pressure plate and they are distributed circumferentially along the connecting part, the external force applied by the operating part can be distributed and transmitted to the second pressure plate. That is, the concentrated pressure input by the operating part can be converted into planar pressure, which can improve the uniformity of the pressure distribution applied by the second pressure plate to the pressure ball, and further improve the uniformity of the pressure distribution applied by the pressure ball to the seed crystal, that is, improve the uniformity of the sintering pressure distribution on the seed crystal surface.

[0033] The seed crystal pressing device provided in this application indirectly applies pressure to the pressing block through the operating part, so that the pressing block applies pressure to the seed crystal under the action of external force and its own gravity. Compared with the related technology that uses the pressing block's own gravity to apply pressure to the seed crystal, this application adds external force, which can reduce the volume of the pressing block, especially the thickness of the pressing block along the axial direction of the mounting bracket. This reduces the space occupied by the entire seed crystal pressing device, allowing 2-3 times more seed crystal pressing devices to be placed in the same volume sintering furnace. This improves the space utilization rate and equipment efficiency of the sintering furnace and reduces the equipment investment cost for mass production. Attached Figure Description

[0034] To more clearly illustrate the technical solutions in the embodiments of this application, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only embodiments of this application. For those skilled in the art, other drawings can be obtained based on the provided drawings without creative effort.

[0035] Figure 1 This is a schematic diagram of the seed crystal pressure application device provided in the embodiments of this application;

[0036] Figure 2 This is a partial structural schematic diagram of the seed crystal pressure application device provided in the embodiments of this application;

[0037] Figure 3 A schematic diagram showing the placement of the seed crystal and carbon film in the seed crystal pressure application device provided in the embodiments of this application;

[0038] Figure 4 A top view of one structure of the operating part, the first pressure plate, and the mounting bracket in the seed crystal pressure device provided in the embodiment of this application;

[0039] Figure 5 A top view of another structure of the operating part, the first pressure plate, and the mounting bracket in the seed crystal pressure device provided in the embodiments of this application;

[0040] Figure 6 This is a schematic diagram of the bonding and sintering apparatus provided in an embodiment of this application.

[0041] Explanation of reference numerals in the attached figures:

[0042] 100 - Seed crystal pressure device; 200 - Support bracket; 300 - Sintering furnace;

[0043] 1-Base support, 101-Bearing part; 2-Mounting bracket, 201-Mounting plate, 202-Mounting frame, 2a-Inner cavity, 2b-Mounting cavity; 3-Operating part; 4-First pressure plate, 401-Connecting part, 402-Pressure part; 5-Second pressure plate; 6-Pressure lump; 7-Seed crystal; 8-Screw; 9-Carbon film; 10-Pressure sensor; 11-Positioning ring; 12-Elastic element. Detailed Implementation

[0044] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0045] The terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of this application. As used in the specification and appended claims of this application, the singular expressions “a,” “an,” “the,” “the,” “the,” and “this” are intended to also include expressions such as “one or more,” unless the context clearly indicates otherwise. It should also be understood that in the embodiments of this application, “one or more” means one, two, or more; “and / or” describes the relationship between related objects, indicating that three relationships may exist; for example, A and / or B can represent: A alone, A and B simultaneously, or B alone, where A and B can be singular or plural. The character “ / ” generally indicates that the preceding and following related objects are in an “or” relationship.

[0046] References to "one embodiment" or "some embodiments" as described in this specification mean that one or more embodiments of this application include a specific feature, structure, or characteristic described in connection with that embodiment. Therefore, the phrases "in one embodiment," "in some embodiments," "in other embodiments," "in still other embodiments," etc., appearing in different parts of this specification do not necessarily refer to the same embodiment, but rather mean "one or more, but not all, embodiments," unless otherwise specifically emphasized. The terms "comprising," "including," "having," and variations thereof mean "including but not limited to," unless otherwise specifically emphasized.

[0047] The "multiple" mentioned in the embodiments of this application refers to two or more. It should be noted that in the description of the embodiments of this application, terms such as "first" and "second" are used only for the purpose of distinguishing descriptions and should not be construed as indicating or implying relative importance, nor should they be construed as indicating or implying order.

[0048] The terms "parallel" and "perpendicular" used in this application refer to "basically parallel" and "basically perpendicular" in practical operation. "Basically parallel" can be understood as parallelism with a certain degree of error, and similarly, "basically perpendicular" can be understood as perpendicularity with a certain degree of error.

[0049] like Figure 1 and Figure 2 As shown, the seed crystal pressure device 100 provided in this application embodiment includes: a base 1, a mounting bracket 2, an operating part 3, a first pressure plate 4, a second pressure plate 5, and a pressure block 6.

[0050] The base 1 has a support portion 101 for supporting the seed crystal 7. The base 1 has a temperature resistance of not less than 1600°C to meet the usage requirements.

[0051] like Figure 3 As shown, in the case of single sintering of the seed crystal 7, the base 1, carbon film 9, and seed crystal 7 are sequentially distributed, with an adhesive layer between the seed crystal 7 and the carbon film 9. The carbon film 9 can be graphite paper or other carbon material components; this embodiment does not limit its application.

[0052] In the case of secondary sintering of seed crystal 7, the base 1 can be a graphite part, and the seed crystal 7 with carbon film 9 bonded to it is placed on the base 1, with an adhesive layer between the carbon film 9 and the base 1; or, the base 1 can be a non-graphite part, and a graphite base is placed on the base 1, and the seed crystal 7 with carbon film 9 bonded to it is placed on the graphite base, with an adhesive layer between the carbon film 9 and the graphite base.

[0053] As can be seen from the above, the base 1 is a graphite part. It can adapt to different sintering requirements without replacing the base 1 or adding a graphite base. This allows the seed crystal pressure device 100 to be compatible with both the primary sintering scenario where the seed crystal 7 is temporarily bonded and the secondary sintering scenario where the seed crystal 7 is permanently fixed. This can improve the scenario adaptability and usage flexibility of the seed crystal pressure device 100.

[0054] The base 1 can be made of high-purity graphite with a purity of 99.99%; alternatively, the base 1 can be made of other carbon materials, which is not limited in this embodiment. The diameter of the supporting part 101 in the base 1 is equal to the diameter of the carbon film 9, serving as the base of the entire device.

[0055] Mounting bracket 2 is used for fixed connection with base 1. Since base 1 needs to be fixed, mounting bracket 2 is also fixed.

[0056] The mounting bracket 2 has an inner cavity 2a and a mounting cavity 2b, with the mounting cavity 2b located around the inner cavity 2a. The mounting bracket 2 has axial and radial directions, with the axial direction perpendicular to the radial direction. The axial direction of the mounting bracket 2 can be vertical, and the radial direction can be horizontal. The mounting cavity 2b and the inner cavity 2a can be coaxially arranged.

[0057] The mounting bracket 2 can be made of high-temperature alloy or other materials. The mounting bracket 2 and the base 1 can be fixedly connected by a threaded connection. For example, the base 1 has an external thread, and the mounting bracket 2 has a threaded hole, with the threaded hole of the mounting bracket 2 engaging with the threaded hole of the base 1. This ensures that the mounting bracket 2 and the base 1 are coaxially aligned, thereby ensuring that the perpendicular deviation of the pressure direction from the seed crystal surface is no greater than 0.5°.

[0058] The operating part 3 is fixedly connected to the mounting bracket 2 via a screw 8, with the axial direction of the screw 8 being the same as that of the mounting bracket 2. The operating part 3 and the screw 8 can be an integral or separate structure. The mounting bracket 2 has a threaded hole, and the screw 8 is threaded into the threaded hole. The threaded hole can be a blind hole.

[0059] The screw can be made of a high-temperature alloy, such as GH4169, which is a precipitation-strengthened nickel-based high-temperature alloy. Alternatively, the screw can be made of other high-temperature resistant materials, which is not limited in this application.

[0060] The first pressure plate 4 includes a connecting part 401 and a pressure-applying part 402. The connecting part 401 is threadedly engaged with the screw 8. It can be understood that the screw 8 passes through the connecting part 401, and the connecting part 401 has a threaded hole, which is threadedly engaged with the screw 8.

[0061] There are at least two pressure-applying portions 402, distributed circumferentially along the connecting portion 401. For example... Figure 4 As shown, there are two pressure-applying parts 402; or, as... Figure 5 As shown, there are eight pressure-applying parts 402.

[0062] One end of the pressure-applying part 402 is fixedly connected to the connecting part 401, and the other end of the pressure-applying part 402 is movably disposed within the mounting cavity 2b along the axial direction of the mounting bracket 2. It can be understood that the pressure-applying part 402 has two ends along the radial direction of the connecting part 401, one end of the pressure-applying part 402 along the radial direction of the connecting part 401 is fixedly connected to the connecting part 401, and the other end of the pressure-applying part 402 along the radial direction of the connecting part 401 and is movably disposed within the mounting cavity 2b along the axial direction of the mounting bracket 2.

[0063] In the above structure, the mounting cavity 2b restricts the axial rotation of the pressure application part 402 about the mounting bracket 2, thereby restricting the axial rotation of the connecting part 401 about the mounting bracket 2, that is, restricting the axial rotation of the connecting part 401 about the screw 8.

[0064] The first pressure plate 4 can be made of high-temperature alloy or other materials. For example, the connecting part 401 and the pressure part 402 can both be made of high-temperature alloy.

[0065] Along the axial direction of the mounting bracket 2, the thickness of the connecting part 401 can be 10mm or other values.

[0066] The second pressure plate 5, the pressure block 6, and the supporting part 101 are all disposed in the inner cavity 2a. The second pressure plate 5 is connected to the pressure part 402. The second pressure plate 5 is used to apply pressure to the pressure block 6, and the pressure block 6 is used to apply pressure to the seed crystal 7. In this way, the second pressure plate 5 applies pressure to the seed crystal 7 through the pressure block 6.

[0067] It should be noted that the pressure block 6 has an upper end face and a lower end face along the axial direction of the mounting bracket 2. The upper end face of the pressure block 6 is used to contact the second pressure plate 5, and the lower end face of the pressure block 6 is used to contact the seed crystal 7.

[0068] The material of the second pressure plate 5 can be a molybdenum alloy. For example, the material of the second pressure plate 5 can be Mo-1. Mo-1 is a high-purity molybdenum material with a molybdenum content of not less than 99.95%, which has excellent high temperature resistance, high strength and good thermal stability.

[0069] Along the axial direction of the mounting bracket 2, the thickness of the second pressure plate 5 can be 20mm or other values.

[0070] The size of the ingot 6 is compatible with seed crystals 7 of different specifications. The ingot 6 is placed directly on the seed crystal 7, making it replaceable. The ingot 6 can be made of high-temperature alloy or Mo-1.

[0071] The method of using the seed crystal pressure device 100 provided in this embodiment is as follows:

[0072] Taking the first sintering of seed crystal 7 as an example, the seed crystal 7 with carbon film 9 is placed on the base 1, and there is an adhesive layer between the seed crystal 7 and the carbon film 9; the pressing block 6 is placed on the seed crystal 7; the mounting bracket 2 and the base 1 are connected; the operating part 3 is rotated, which drives the screw 8 to rotate. Since the screw 8 and the mounting bracket 2 are fixedly connected, the screw 8 moves along its axis to the set position and then stops moving. The operating part 3 is rotated again, and the connecting part 401 and the pressure part 402 do not rotate under the action of the mounting cavity 2b, so that the connecting part 401, which is threaded with the screw 8, moves along the axis of the screw 8, and the pressure part... 402 also moves along the axial direction of the screw 8 with the connecting part 401, thereby driving the second pressure plate 5 connected to the pressure part 402 to move. The second pressure plate 5 moves towards the pressure block 6, so that the second pressure plate 5 can contact the pressure block 6. In this way, the second pressure plate 5 can apply pressure to the pressure block 6, thereby applying pressure to the seed crystal 7. After the pressure applied to the seed crystal 7 meets the requirements, the rotating operation part 3 can be stopped. Then, the seed crystal pressure device 100 with carbon film 9 and seed crystal 7 can be placed in the sintering furnace 300 for sintering, thereby bonding the seed crystal 7 to the carbon film 9.

[0073] The secondary sintering of seed crystal 7 can be referred to the primary sintering of seed crystal 7, and will not be explained here.

[0074] As can be seen from the above usage method, in the above seed crystal pressure device 100, since there are at least two pressure-applying parts 402 in the first pressure plate 4 and they are distributed circumferentially along the connecting part 401, the external force applied by the operating part 3 can be distributed and transmitted to the second pressure plate 5. That is, the concentrated pressure input by the operating part 3 can be converted into planar pressure, which can improve the uniformity of the pressure distribution of the second pressure plate 5 on the pressure block 6, and further improve the uniformity of the pressure distribution of the pressure applied by the pressure block 6 on the seed crystal 7, that is, improve the uniformity of the sintering pressure distribution on the surface of the seed crystal 7.

[0075] To further improve the uniformity of sintering pressure distribution on the surface of the seed crystal 7, the pressure-applying portions 402 can be uniformly distributed along the circumference of the connecting portion 401. It is understood that the more pressure-applying portions 402 there are, the better the uniformity of sintering pressure distribution on the surface of the seed crystal 7. For example, there can be eight pressure-applying portions 402.

[0076] In the seed crystal pressure device 100 provided in this application embodiment, pressure is indirectly applied to the pressure block 6 through the operating part 3, so that the pressure block 6 applies pressure to the seed crystal 7 under the action of external force and its own gravity. Compared with the related technology that uses the pressure block's own gravity to apply pressure to the seed crystal, the embodiment of this application adds external force, thereby reducing the volume of the pressure block 6, especially reducing the thickness of the pressure block 6 along the axial direction of the mounting bracket 2, thereby reducing the space occupied by the entire seed crystal pressure device 100. Two to three times more seed crystal pressure devices 100 can be placed in the sintering furnace 300 of the same volume, which can improve the space utilization rate and equipment utilization efficiency of the sintering furnace 300 and reduce the equipment investment cost for mass production.

[0077] In the seed crystal pressure device 100 provided in this embodiment, the operating part 3 and the first pressure plate 4 apply pressure to the pressure block 6 through the second pressure plate 5. The second pressure plate 5 does not directly contact the seed crystal 7, while the pressure block 6 directly contacts the seed crystal 7. As the usage time increases, the pressure block 6 may become sticky or worn, requiring replacement. The pressure block 6 can be directly removed and replaced without replacing other components in the seed crystal pressure device 100, such as the second pressure plate 5. This simplifies the maintenance of the seed crystal pressure device 100, reduces its maintenance costs, and improves its maintenance efficiency.

[0078] In the seed crystal pressure application device 100 provided in this application embodiment, pressure can be applied by rotating the operating part 3. Furthermore, rotating the operating part 3 in the forward direction tightens the screw 8, increasing the pressure applied to the seed crystal 7; rotating the operating part 3 in the reverse direction tightens the screw 8, decreasing the pressure applied to the seed crystal 7. Therefore, the pressure applied to the seed crystal 7 can be adjusted to meet the needs of different sintering processes. The thread pitch of the screw 8 can be no greater than 1.5 mm, improving the linear controllability of pressure adjustment; alternatively, the thread pitch of the screw 8 can also be other values, which are not limited in this application embodiment.

[0079] In this embodiment, the specific structure of the mounting bracket 2 is designed according to the actual situation. For example... Figure 1 and Figure 2 As shown, in some embodiments, the mounting bracket 2 includes a mounting frame 202 and a mounting plate 201. The mounting frame 202 is an annular structure that encloses an inner cavity 2a. The mounting frame 202 has a top end and a bottom end along its axial direction. The bottom end is used to be fixedly connected to the base support 1, and the top end is fixedly connected to the mounting plate 201. The mounting cavity 2b is located in the mounting frame 202 and is arranged along the circumference and axial direction of the mounting frame 202.

[0080] In the above embodiments, the mounting plate 201 and the screw 8 are fixedly connected. It is understood that the mounting plate 201 is provided with a threaded hole that engages with the screw 8; this threaded hole can be a blind hole. The thickness of the mounting plate 201 along the axial direction of the mounting bracket 2 can be no less than 10 mm, thereby ensuring that the mounting plate 201 provides a fixed fulcrum for the screw 8; alternatively, the thickness of the mounting plate 201 along the axial direction of the mounting bracket 2 can also be less than 10 mm, and this embodiment does not limit this aspect.

[0081] To facilitate the axial movement and pressure application of the pressure-applying part 402 along the mounting bracket 2, the pressure-applying part 402 and the mounting cavity 2b are slidably fitted. For example, a groove is provided within the mounting cavity 2b, and the pressure-applying part 402 is provided with a protrusion; the protrusion and the groove are slidably fitted along the axial direction of the mounting bracket 2. Alternatively, the pressure-applying part 402 and the mounting cavity 2b can also achieve a slidable fit through other structures; this embodiment does not limit this approach.

[0082] The embodiments of sliding fit between the pressure part 402 and the mounting cavity 2b, and the embodiments of mounting bracket 2 including mounting frame 202 and mounting plate 201, can be implemented individually or in combination, and the embodiments of this application do not limit this.

[0083] In this embodiment, the pressure block 6 is placed directly on the seed crystal 7. During the process of pressing the pressure block 6 under the second pressure plate 5, the pressure block 6 is prone to displacement, affecting the pressure effect of the pressure block 6 on the seed crystal 7. Figure 1 and Figure 2As shown, to reduce the probability and extent of displacement of the pressure block 6, the mounting bracket 2 is provided with a positioning ring 11. The positioning ring 11 is located in the inner cavity 2a and is distributed around the periphery of the pressure block 6, and is positioned and engaged with the pressure block 6 along the radial direction of the mounting bracket 2, which is perpendicular to the axial direction of the mounting bracket 2. In this way, by positioning the pressure block 6 with the positioning ring 11, the alignment accuracy between the axis of the pressure block 6 and the axis of the seed crystal 7 can be improved, the bonding defects caused by the displacement of the pressure block 6 can be reduced, and the stability of the bonding process of the seed crystal 7 can be improved.

[0084] In the above structure, the positioning ring 11 can be connected to the inner wall of the inner cavity 2a. Along the axial direction of the mounting bracket 2, the positioning ring 11 and the pressing block 6 can be set flush with each other, which can be understood as: the bottom end of the positioning ring 11 is set flush with the bottom end of the pressing block 6, and the top end of the positioning ring 11 is set flush with the top end of the pressing block 6.

[0085] The positioning ring 11 can be made of molybdenum alloy or other materials.

[0086] In some embodiments, the positioning ring 11 and the pressing block 6 can be in a clearance fit. It is understood that there can be a gap between the positioning ring 11 and the pressing block 6. For example, the gap between the positioning ring 11 and the pressing block 6 is not greater than 0.1 mm. The inner wall of the positioning ring 11 is provided with an anti-stick coating. The anti-stick coating can be a boron nitride coating or other coatings. In this way, the risk of the positioning ring 11 and the pressing block 6 sticking together at high temperature can be reduced.

[0087] The thickness of the anti-stick coating can be selected according to the actual situation. For example, the thickness of the anti-stick coating is 0.05 mm. This application embodiment does not limit this.

[0088] The inner wall is coated with a 0.05mm thick boron nitride coating to reduce the risk of high-temperature adhesion to the pressure block 6, and to fix the position of the pressure block 6 to ensure that the center of the pressure block 6 is aligned with the center of the seed crystal 7.

[0089] In some embodiments, an elastic element 12 is provided in the mounting cavity 2b. The elastic element 12 is located on the bottom side of the pressure application part 402. The second pressure plate 5 is connected to the pressure application part 402 through the elastic element 12. The elastic element 12 can elastically deform along the axial direction of the mounting bracket 2.

[0090] For example, one end of the elastic element 12 along the axial direction of the mounting bracket 2 is connected to or abuts against the second pressure plate 5, and the other end of the elastic element 12 along the axial direction of the mounting bracket 2 is connected to or abuts against the bottom wall of the mounting cavity 2b.

[0091] In the above embodiments, the elastic element 12 can play a buffering role. Under the action of the elastic element 12, the pressure transmitted by the pressure application part 402 can be buffered by the elastic element 12 and transmitted to the second pressure plate 5 more stably, so that the second pressure plate 5 can stably apply pressure to the pressure block 6, and the pressure is converted into a uniform surface pressure through the second pressure plate 5. It can automatically adapt to the slight unevenness of the seed crystal 7 surface, reduce the probability and degree of local pressure concentration, and further improve the uniformity of the sintering pressure distribution on the seed crystal surface.

[0092] The elastic element 12 can be cylindrical, and the elastic element 12 and the pressure application part 402 correspond one-to-one. For example, the elastic element 12 can be cylindrical; or, the elastic element 12 can be annular and there is only one, and all the pressure application parts 402 correspond to the same elastic element 12.

[0093] The thickness of the elastic element 12 along the axial direction of the mounting bracket 2 can be 50 mm or other values, and the elastic deformation range of the elastic element 12 can be no more than 1.5% of the thickness of the elastic element 12 or other values.

[0094] The elastic element 12 can be a molybdenum-rhenium alloy, for example, Mo-5Re, where the sum of the mass fractions of molybdenum and rhenium is at least 99.99%.

[0095] In some embodiments, the seed crystal pressure device 100 further includes a pressure sensor 10 disposed between the second pressure plate 5 and the pressure block 6. Exemplarily, the pressure sensor 10 is disposed on either the second pressure plate 5 or the pressure block 6.

[0096] In this embodiment, the positioning ring 11 can improve the alignment accuracy between the pressure block 6 and the seed crystal 7 by positioning the pressure block 6. With the real-time feedback of the pressure sensor 10, the pressure applied to the seed crystal 7 can be dynamically adjusted, which can improve the stability of the seed crystal 7 bonding process.

[0097] The pressure sensor 10 can be made of high-temperature piezoelectric ceramic material with a sapphire substrate. The pressure sensor 10 can be PT124G-20MPa, where PT124G-20MPa is a model number for a high-temperature melt pressure sensor. "PT124G" is the model designation for this series of sensors, and "20MPa" indicates its measurement range is 0 to 20 MPa. Alternatively, the pressure sensor 10 can be of other types; this embodiment does not limit its application.

[0098] The pressure sensor 10 has an upper limit of operating temperature of 1400℃, which is suitable for the high-temperature environment of the sintering process.

[0099] In the seed crystal pressure application device 100, there may be one or more pressure sensors 10. In some embodiments, the pressure sensors 10 are arranged in groups, with at least two groups of pressure sensors 10 distributed circumferentially along the pressure block 6, and each group of pressure sensors 10 includes at least one pressure sensor 10. This can improve the pressure detection accuracy.

[0100] When each group of pressure sensors 10 includes at least two pressure sensors 10, any two pressure sensors 10 in each group are distributed radially along the pressure block 6. This can further improve the pressure detection accuracy.

[0101] To facilitate the determination of the pressure detected by the pressure sensor 10, the aforementioned seed crystal pressure application device also includes a display, which is connected to the pressure sensor 10. The display shows the pressure value, which is the average of the detected values ​​from all groups. This display is placed outside the sintering furnace 300.

[0102] It should be noted that when each group of pressure sensors 10 includes at least two pressure sensors, the detection value of each group is the average of the detection values ​​of all pressure sensors 10 in that group.

[0103] To facilitate the adjustment of the pressure applied to the seed crystal 7, the operating part 3 is provided with a pressure scale, which is arranged circumferentially along the operating part 3, and the mounting bracket 2 is provided with an indicator corresponding to the pressure scale; alternatively, the mounting bracket 2 has a pressure scale, which is arranged circumferentially along the operating part 3, and the operating part 3 is provided with an indicator. In this way, during the rotation of the operating part 3, the applied pressure can be determined by observing the pressure scale corresponding to the indicator, thereby facilitating the adjustment of the pressure applied to the seed crystal 7.

[0104] For example, the pressure scale range can be 0.1-2.5 MPa, and the indicator can be an indicator arrow.

[0105] To facilitate rotation of the operating part 3, the operating part 3 is provided with an anti-slip structure. The anti-slip structure may include anti-slip textures or anti-slip protrusions, etc., and this embodiment does not limit it.

[0106] The operating part 3 can be a circular handle or other structures, and this application embodiment does not limit this.

[0107] In some embodiments, the operating part 3 may include: an operating part body, and an operating part outer layer covering the operating part body; wherein the operating part outer layer is an insulating and high-temperature resistant layer.

[0108] The high-temperature insulating layer can be a high-temperature insulating ceramic layer or other types. The temperature resistance of the high-temperature insulating layer can be no less than 200℃, which can ensure the insulation safety of operation in high-temperature environments.

[0109] The main body of the operating part can be a high-temperature alloy, for example, the main body of the operating part can be GH4169 high-temperature alloy, which is a nickel-based high-temperature alloy strengthened by precipitation of body-centered tetragonal γ phase and face-centered cubic γ′ phase.

[0110] In the seed crystal pressure device 100 provided in this application embodiment, the coordinated action of the operating part 3, the first pressure plate 4, the elastic element 12, and the second pressure plate 5 can achieve uniform pressure on the surface of the seed crystal 7, automatically adapt to the slight unevenness of the seed crystal 7 to avoid local pressure concentration, and improve the uniformity of the adhesive layer; the pressure block 6 can be replaced, which can simplify the maintenance process and reduce maintenance costs; the base 1 is designed as a graphite part, which can broaden the applicable scenarios of the seed crystal pressure device 100 and take into account different sintering requirements; the cooperation between the positioning ring 11 and the pressure sensor 10 can ensure positioning accuracy and pressure controllability. The coordinated action of multiple components can effectively improve the bonding quality of the seed crystal 7 and the performance of the seed crystal pressure device 100.

[0111] Based on the seed crystal pressure device 100 provided in the above embodiments, this application also provides a bonding and sintering device, such as... Figure 6 As shown, the bonding sintering apparatus includes a sintering furnace 300 and a seed crystal pressing device 100, with the seed crystal pressing device 100 located inside the sintering furnace 300.

[0112] Since the seed crystal pressure device 100 provided in the above embodiments has the above-mentioned technical effects, and the above-mentioned bonding and sintering device includes the above-mentioned seed crystal pressure device 100, the above-mentioned bonding and sintering device also has the corresponding technical effects, which will not be elaborated here.

[0113] The sintering furnace 300 may contain one or more seed crystal pressure devices 100. To facilitate the placement of multiple seed crystal pressure devices 100, the bonding sintering device also includes a support bracket 200. There are at least two seed crystal pressure devices 100, and the at least two seed crystal pressure devices 100 are distributed along the height direction of the support bracket 200. The height direction of the support bracket 200 is the axial direction of the mounting bracket 2 of the seed crystal pressure device 100.

[0114] The one-time sintering method for seed crystal 7 may include:

[0115] Place the seed crystal 7 with carbon film 9 on the base 1;

[0116] Will Figure 2 The structure shown is fixed to the base 1 by the mounting bracket 2. Rotate the operating part 3 and observe the pressure value displayed on the display. After the pressure value displayed on the display reaches the preset pressure, stop rotating the operating part 3 to complete the assembly of the device.

[0117] The three devices assembled above are stacked in sintering furnace 300. After evacuating the sintering furnace 300 to 10⁻²Pa, the temperature is raised to 400℃ at a rate of 5℃ / min and held for 2 hours.

[0118] After the sintering furnace 300°C naturally cools to room temperature, it is dismantled. Figure 2 The structure shown is followed by pressing 6, and then removing the sintered seed crystal 7.

[0119] It should be noted that the room temperature can be between 15℃ and 25℃.

[0120] The secondary sintering method for seed crystal 7 may include:

[0121] Place the seed crystal 7 with carbon film 9 attached on the base 1;

[0122] Will Figure 2 The structure shown is fixed to the base 1 by the mounting bracket 2. Rotate the operating part 3 and observe the pressure value displayed on the display. After the pressure value displayed on the display reaches the preset pressure, stop rotating the operating part 3 to complete the assembly of the device.

[0123] The three devices assembled above are stacked in sintering furnace 300. After evacuating the sintering furnace 300 to 10⁻²Pa, the temperature is raised to 400℃ at a rate of 5℃ / min and held for 2 hours.

[0124] After the sintering furnace 300°C naturally cools to room temperature, it is dismantled. Figure 2 After the structure shown and the pressing 6, the seed crystal 7 bonded to the base 1 is removed. The seed crystal 7 with the base 1 can be directly used for subsequent single crystal growth.

[0125] The above-mentioned primary sintering method and secondary sintering method of seed crystal 7 are exemplary and not the only methods.

[0126] The above description of the disclosed embodiments enables those skilled in the art to make or use this application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of this application. Therefore, this application is not to be limited to the embodiments shown herein, but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A seed crystal pressure application device, characterized in that, include: The base (1), mounting bracket (2), operating part (3), first pressure plate (4), second pressure plate (5) and pressure block (6); The base (1) has a support portion (101) for supporting the seed crystal (7). The mounting bracket (2) is used to be fixedly connected to the base (1). The mounting bracket (2) has an inner cavity (2a) and a mounting cavity (2b). The mounting cavity (2b) is located on the periphery of the inner cavity (2a). The operating part (3) is fixedly connected to the mounting bracket (2) by a screw (8), and the axial direction of the screw (8) is the axial direction of the mounting bracket (2); The first pressure plate (4) includes a connecting part (401) and a pressure part (402). The connecting part (401) and the screw (8) are threaded together. There are at least two pressure parts (402) and they are distributed around the connecting part (401). One end of the pressure part (402) is fixedly connected to the connecting part (401), and the other end of the pressure part (402) is movably disposed in the mounting cavity (2b) along the axial direction of the mounting bracket (2). The second pressure plate (5), the pressure block (6) and the bearing part (101) are all disposed in the inner cavity (2a). The second pressure plate (5) and the pressure part (402) are connected. The second pressure plate (5) is used to apply pressure to the pressure block (6), and the pressure block (6) is used to apply pressure to the seed crystal (7).

2. The seed crystal pressure application device according to claim 1, characterized in that, The mounting bracket (2) includes a mounting frame (202) and a mounting plate (201). The mounting frame (202) is an annular structure that encloses an inner cavity (2a). The mounting frame (202) has a top end and a bottom end along its axial direction. The bottom end is used to be fixedly connected to the base (1). The top end is fixedly connected to the mounting plate (201). The mounting cavity (2b) is located in the mounting frame (202). The mounting cavity (2b) is arranged along the circumference and axial direction of the mounting frame (202). The mounting plate (201) is fixedly connected to the screw (8). And / or, the pressure application part (402) and the mounting cavity (2b) are in sliding engagement.

3. The seed crystal pressure application device according to claim 1, characterized in that, The mounting bracket (2) is provided with a positioning ring (11), which is located in the inner cavity (2a). The positioning ring (11) is distributed around the periphery of the pressing block (6) and is positioned and engaged with the pressing block (6) along the radial direction of the mounting bracket (2). The radial direction of the mounting bracket (2) is perpendicular to the axial direction of the mounting bracket (2).

4. The seed crystal pressure application device according to claim 3, characterized in that, The positioning ring (11) and the pressing block (6) are fitted with a clearance, and the inner wall of the positioning ring (11) is provided with an anti-stick coating.

5. The seed crystal pressure application device according to claim 1, characterized in that, An elastic element (12) is provided in the mounting cavity (2b). The elastic element (12) is located on the bottom side of the pressure application part (402). The second pressure plate (5) is connected to the pressure application part (402) through the elastic element (12). The elastic element (12) can elastically deform along the axial direction of the mounting bracket (2).

6. The seed crystal pressure application device according to claim 1, characterized in that, It also includes a pressure sensor (10) disposed between the second pressure plate (5) and the pressure block (6).

7. The seed crystal pressure application device according to claim 6, characterized in that, The pressure sensors (10) are arranged in groups, with at least two groups of pressure sensors (10) distributed along the circumference of the pressure block (6), and each group of pressure sensors (10) includes at least one pressure sensor (10). In the case where each group of pressure sensors (10) includes at least two pressure sensors (10), any two pressure sensors (10) in each group are radially distributed along the pressure mass (6).

8. The seed crystal pressure application device according to claim 7, characterized in that, It also includes a display connected to the pressure sensor (10), the display being used to display a pressure value, the pressure value being the average of the detection values ​​of all groups; In the case where each group of pressure sensors (10) includes at least two pressure sensors, the detection value of each group is the average of the detection values ​​of all pressure sensors (10) in each group.

9. The seed crystal pressure application device according to any one of claims 1-8, characterized in that, One of the operating part (3) and the mounting bracket (2) is provided with a pressure scale, and the other is provided with an indicator corresponding to the pressure scale. The pressure scale is arranged along the circumference of the operating part (3). And / or, the operating part (3) is provided with an anti-slip structure; And / or, the operating part (3) is a circular handle; And / or, the operating part (3) includes: an operating part body, and an operating part outer layer covering the operating part body; wherein, the operating part outer layer is an insulating high-temperature resistant layer; And / or, the base (1) is a graphite piece.

10. A bonding and sintering apparatus, characterized in that, include: The sintering furnace (300) and the seed crystal pressure device (100) as claimed in any one of claims 1-9, the seed crystal pressure device (100) being located inside the sintering furnace (300).

11. The bonding and sintering apparatus according to claim 10, characterized in that, It also includes a support bracket (200), and there are at least two seed crystal pressure devices (100). The at least two seed crystal pressure devices (100) are distributed on the support bracket (200) along the height direction of the support bracket (200), and the height direction of the support bracket (200) is the axial direction of the mounting bracket (2) of the seed crystal pressure device (100).

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