A multi-ferroic material based on interlayer electron self-doping mechanism and a design method thereof

By constructing a two-dimensional van der Waals homogeneous bilayer structure through an interlayer self-doping mechanism, the problems of spin-orbit coupling dependence and low-temperature stability of Type-II multiferroic materials are solved, achieving high transition temperature and strong magnetoelectric coupling, which is suitable for low-power spintronic devices and memories.

CN122177296APending Publication Date: 2026-06-09ZHEJIANG UNIV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
ZHEJIANG UNIV
Filing Date
2026-01-19
Publication Date
2026-06-09

AI Technical Summary

Technical Problem

Existing Type-II multiferroic materials rely on spin-orbit coupling, have low transition temperatures, and are unstable at two-dimensional ultrathin scales, making it difficult to maintain strong magnetoelectric coupling at room temperature.

Method used

By employing an interlayer self-doping mechanism, a two-dimensional van der Waals homogeneous bilayer structure is constructed. By utilizing the different preferences of antiferromagnetic and ferromagnetic order band filling, spontaneous interlayer charge transfer is achieved, breaking the spatial inversion symmetry, inducing out-of-plane ferroelectric polarization, and forming an intrinsic strong magnetoelectric coupling.

Benefits of technology

It achieves high transition temperature and ultrathin stability without relying on spin-orbit coupling, strong magnetoelectric coupling, is suitable for nanoscale devices, has low-energy-consumption reversible switching capability, and broadens the candidate range of multiferroic materials.

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Abstract

The application discloses a kind of multiferroic materials and design method based on interlayer electron self-doping mechanism.The material is composed of two-dimensional van der waals homodimer structure with intermediate energy band filling characteristics, break space inversion symmetry by spontaneous interlayer charge transfer, stabilize antiferromagnetic sequence in one layer, stabilize ferromagnetic sequence in another layer, and simultaneously induce out-of-plane ferroelectric polarization;Ferroelectricity and magnetic sequence realize inherent strong coupling through charge transfer direction.The design method includes material selection, double-layer construction and symmetry breaking trigger steps.It is confirmed by first-principle calculation that the multiferroic of double-layer CrTe2 and FeTe, the transition temperature of CrTe2 can reach more than 350K, and the polarization and magnetic sequence can be reversibly switched by external electric field.The application also prepares double-layer CrTe2 multiferroic material, and confirms that the multiferroic material designed by the application is achievable.The application provides a general and feasible solution for developing room temperature, strong coupling two-dimensional multiferroic devices.
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