An overcurrent and overtemperature protected electronic device
By introducing fusible metal leads on the surface of the PTC unit, the problems of high current threshold and insufficient over-temperature protection of PTC protection devices in high current scenarios are solved, realizing fast-response overcurrent and over-temperature protection and thin design.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- SHANGHAI CHANGYUAN WAYON CIRCUIT PROTECTION CO LTD
- Filing Date
- 2026-03-12
- Publication Date
- 2026-06-09
AI Technical Summary
Existing PTC protection devices have high current thresholds and slow cut-off in high-current scenarios, and lack over-temperature protection characteristics, making it impossible to protect the circuit in a timely and effective manner.
By introducing easily fusible metal leads on the surface of the PTC unit and connecting them in parallel between the electrodes, when the PTC core material is heated and flipped to a high-resistivity state, the current is concentrated to the metal leads and melts, thus achieving rapid overcurrent and overtemperature protection.
It achieves rapid cut-off and over-temperature protection in high-current scenarios, reduces device thickness, and improves current carrying capacity and protection sensitivity.
Smart Images
Figure CN122177604A_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of protection device technology, and specifically to an electronic device for overcurrent and overtemperature protection. Background Technology
[0002] Positive temperature coefficient (PTC) materials exhibit low resistance at normal temperatures. When overcurrent or overheating occurs in a circuit, their resistance instantly rises to high resistance, putting the circuit into an open-circuit or low-current state, thus protecting the circuit. Therefore, protective devices made from PTC materials are widely used. A common device structure involves selecting a material with a specific PTC as the core material, then fabricating a package and connecting electrodes in series in the circuit using semiconductor manufacturing processes. Within the normal operating current range, this protective device exhibits low resistance and normal conduction characteristics. When the current exceeds the range, the resistance instantly rises to high resistance, putting the circuit into an open-circuit or low-current state. The operating range can be adjusted by modifying the core material, cross-sectional area, and parallel structure.
[0003] Similar device structures already exist in the existing technology.
[0004] For example, patent application CN99804872.0 discloses a chip-type PTC thermistor with a conductive polymer having a positive temperature coefficient. The purpose is to provide a chip-type PTC thermistor with excellent long-term connection reliability with the side electrodes and capable of withstanding surface mounting. A first main electrode and a first sub-electrode are provided on the first surface, and a second main electrode and a second sub-electrode are provided on the second surface. The two electrodes are electrically connected through the first and second side electrodes by a nickel plating layer with a thickness of more than 1 / 20 of the distance between the first and second main electrodes, which is used as the connection between the first main electrode and the second sub-electrode and between the first sub-electrode and the second main electrode.
[0005] For example, patent application CN202110110845.6 discloses a side-electrode type PTC chip, including a PTC chip body. The sidewalls of the PTC chip body, which are far apart from each other, are coated with an electrode layer made of aluminum paste or silver paste. By using side-electrode design on the PTC chip body, current flows through the sides. The increased thickness between the electrodes achieves higher resistance and significantly improved voltage withstand capability without increasing or even reducing the thickness of the PTC chip body, making it better suited for high-voltage environments.
[0006] However, in practical implementation, the inventors discovered that in this type of technical solution, if it needs to be applied to high-current circuit scenarios, the current-carrying capacity is often increased by adjusting the wire diameter and length of the core material. However, this results in a high overcurrent protection current threshold, insufficient cut-off response, and inability to provide timely and effective protection. Furthermore, the lack of over-temperature protection characteristics poses a potential application risk when the operating environment temperature rises abnormally. Summary of the Invention
[0007] In view of the above-mentioned problems in the prior art, an electronic device with overcurrent and overtemperature protection is provided.
[0008] The specific technical solution is as follows: An electronic device with overcurrent and overtemperature protection, including a PTC unit; Electrodes are formed at both ends of the PTC unit along the height direction; A first insulating layer is formed on the first surface of the PTC unit, and metal leads are formed on the first insulating layer; The metal leads are connected between the electrodes and will melt in the event of an over-temperature or over-current fault.
[0009] On the other hand, the electrode includes: Vertical conductive pillars are respectively disposed on the outermost side of the electronic device and penetrate the electronic device in a vertical direction. At least one end electrode, the end electrode being formed above and / or below the vertical conductive post, the end electrode extending onto the first insulating layer; The metal leads are respectively connected between the end electrodes on both sides.
[0010] On the other hand, the PTC unit includes a layer of PTC chip; A first conductive layer is formed on the first surface of the PTC chip; The first conductive layer partially covers the first surface; The first insulating layer covers the first conductive layer and the exposed portion of the PTC chip; The end face of the first conductive layer is connected to the first electrode in the electrode; The PTC chip has a second conductive layer formed on its second surface relative to the first surface; The second conductive layer partially covers the second surface; A second insulating layer is also formed, which covers the second conductive layer and the exposed portion of the PTC chip; The end face of the second conductive layer is connected to the second electrode in the electrode.
[0011] On the other hand, the PTC unit contains at least two layers of PTC chips; The side of the PTC chip facing the upper or lower surface of the electronic device and exposed is designated as the first surface; The surface of the PTC chip facing the PTC chip in the other layer serves as the second surface; A first conductive layer is formed on the first surface; The first conductive layer partially covers the first surface; The first insulating layer covers the first conductive layer and the exposed portion of the PTC chip; The end face of the first conductive layer is connected to the first electrode in the electrode; The PTC chip has a second conductive layer formed on its second surface relative to the first surface; The second conductive layer partially covers the second surface; A second insulating layer is also formed, which covers the exposed portion of the second conductive layer and the second surface; The end face of the second conductive layer is connected to the second electrode in the electrode.
[0012] On the other hand, a low-melting-point metal is formed on the metal lead as a fluxing layer, and the fluxing layer melts earlier than the metal lead.
[0013] On the other hand, the metal leads are formed on the first surface with one or a combination of straight lines, S-lines, curves, irregular lines, and etching patterns. The diameter of the metal lead wire can be one or a combination thereof, such as equal width, dumbbell shape, or uneven thickness.
[0014] On the other hand, the electronic device also includes a plastic package, which is wrapped around the outside of the conductive post and the upper surface of the electronic device, and the terminal electrode and the metal lead are disposed on the lower surface of the device.
[0015] On the other hand, the electrode includes: Vertical conductive pillars are respectively disposed on the outermost side of the electronic device and penetrate the electronic device in a vertical direction. A terminal electrode is formed above or below the vertical conductive post and extends onto the first insulating layer. The metal leads are respectively connected between the vertical conductive posts on both sides.
[0016] On the other hand, the metal lead is one of gold, silver, copper, nickel, tin, aluminum, iron, or an alloy thereof.
[0017] The above technical solution has the following advantages or beneficial effects: To address the issues of high current threshold and slow cut-off in existing PTC protection devices under high-current conditions, a new technology introduces metal leads in parallel with the PTC core material on the surface of the PTC unit. In the event of an overcurrent fault, the PTC core material heats up and flips to a high-resistance state, at which point the high current concentrates on the metal leads, causing them to melt. In the event of an overtemperature fault, the PTC core material exhibits high resistance, and the current previously shunt by the PTC also flows through the metal leads, causing them to melt due to overcurrent. This achieves a thinner profile, higher current carrying capacity, and over-temperature and overcurrent protection characteristics. Attached Figure Description
[0018] Embodiments of the invention will be described more fully with reference to the accompanying drawings. However, the drawings are for illustration and explanation only and do not constitute a limitation on the scope of the invention.
[0019] Figure 1 This is an overall schematic diagram of Embodiment 1 of the present invention; Figure 2 This is an overall schematic diagram of Embodiment 2 of the present invention; Figure 3 This is an overall schematic diagram of Embodiment 3 of the present invention; Figure 4 This is an overall schematic diagram of Embodiment 4 of the present invention; Detailed Implementation
[0020] The technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.
[0021] It should be noted that, unless otherwise specified, the embodiments and features described in the present invention can be combined with each other.
[0022] The present invention will be further described below with reference to the accompanying drawings and specific embodiments, but this is not intended to limit the scope of the invention.
[0023] This invention includes: An electronic device with overcurrent and overtemperature protection, comprising a PTC unit 1; Electrodes 2 are formed at the left and right ends of PTC unit 1 along the height direction, respectively; A first insulating layer 3 is formed on the first surface of PTC unit 1, and a metal lead 4 is formed on the first insulating layer 3; Metal lead 4 is connected between electrodes 2 and melts in the event of overheating or overcurrent faults.
[0024] Specifically, to address the issues of high current threshold and slow cut-off in existing PTC protection devices under high current scenarios, a metal lead 4 that is easy to melt and connected in parallel with the PTC core material is introduced on the surface of the PTC unit 1. This forms a parallel current channel between the electrodes at the left and right ends, thereby achieving high current carrying capacity. At the same time, it is not necessary to excessively increase the thickness of the PTC core material, which is beneficial for reducing the device thickness. It also avoids the problem that the impedance characteristics of an excessively thick PTC core material change slowly during overcurrent faults.
[0025] In response to overcurrent faults, since the metal lead 4 itself has a narrow wire diameter and the PTC core material does not have a very large thickness, the PTC unit 1 will quickly switch to a high-resistance state for protection in the event of an overcurrent fault, and limit the overall current flowing through the device. At this time, the current will be concentrated on the metal lead 4 to melt the metal lead 4, thereby achieving a highly sensitive overcurrent protection action.
[0026] Meanwhile, for some extreme high-current scenarios, electronic devices may incorporate thicker PTC cores to enhance their high-current carrying capacity. In this case, the response speed of PTC unit 1 will be slower, but it will generate significant self-heating during reversal. Furthermore, as the resistance gradually increases, the proportion of current flowing through metal lead 4 will still gradually increase. Therefore, when an overcurrent fault occurs, one side of the originally parallel current path of metal lead 4 will quickly melt, reducing the current flowing through it. This, combined with the relatively delayed resistance change of PTC unit 1, achieves a complete protection action.
[0027] In response to over-temperature faults, when high temperature occurs, PTC unit 1 will directly enter a high-resistance state, and a large proportion of the current will be distributed to the metal lead 4 for melting, thereby achieving rapid over-temperature protection.
[0028] In actual implementation, the aforementioned electronic devices are mainly installed as discrete electronic devices in electronic circuits, but they may also be integrated into some integrated circuit devices as needed. Among them, PTC unit 1 is composed of PTC chip 11, and the PTC chip 11 has different thicknesses and layers depending on the current carrying capacity of the device.
[0029] The PTC chip 11 mainly consists of a conductive material with a positive temperature coefficient effect and a first conductive layer 12, a second conductive layer 13, a first insulating layer 14, and a second insulating layer 15 coated on the conductive material. The first insulating layer 14 and the second insulating layer 15 are used to encapsulate the PTC chip 11, while the first conductive layer 12 and the second conductive layer 13 are used to connect the PTC chip 11 and the electrode 2.
[0030] Because the PTC chip 11 needs a certain physical thickness to carry current and achieve low on-resistance, it typically occupies a significant portion of the device thickness. To reduce the space occupied by the thickness, existing electronic devices usually use side-leading electrodes 2. That is, in the cross-sectional direction of the device shown in the figure, vertical electrodes 2 are fabricated on the left and right sides respectively as the positive and negative terminals in actual use, and are soldered to external circuits to form a circuit. The electrodes 2 are connected to the PTC chip 11 through the first conductive layer 12 and the second conductive layer 13 on the upper and lower sides of the PTC chip 11, respectively.
[0031] Among them, the PTC chip 11 is mainly a positive temperature effect conductive material, which is either a polymer-based conductive material, a ceramic-based conductive material, or a polymer-based conductive composite material.
[0032] The metal lead 4 can be one of gold, silver, copper, nickel, tin, aluminum, iron and its alloys. It is mainly formed by processes such as vapor deposition and photolithography to form a lead with a relatively thin physical thickness. The maximum current that the area can withstand can be changed by adjusting the type and thickness of the material.
[0033] The metal lead 4, positioned above, can be a straight line, an S-curve, a curve, an irregular line, an etched pattern, or a combination thereof. Its diameter can be of uniform width, dumbbell shape, or uneven thickness, or a combination thereof. This type of design typically does not alter the current carrying capacity of the metal lead 4. However, in scenarios where the metal lead 4 needs to fuse according to the design, thereby protecting the PTC chip 11, such as overcurrent protection in ultra-high current scenarios, extending the trace of the metal lead 4 to cover a larger surface area can effectively capture the heat generated by the PTC chip 11 below. This facilitates rapid heating of the metal lead 4 and the formation of hot spots, thus achieving over-temperature protection.
[0034] The first conductive layer 12 and the second conductive layer 13 are typically formed on the upper and lower surfaces of the PTC chip 11 by vapor deposition. The direction of the current is controlled by selectively etching away one end of the metal foil. The metal foil can be one of gold, silver, copper, nickel, tin, aluminum, iron and its alloys.
[0035] The first insulating layer 14 and the second insulating layer 15 are insulating materials that are further grown on top of the materials after the first conductive layer 12 and the second conductive layer 13 are photolithographically formed. These materials are non-conductive materials such as silicon oxide and polymers, and serve to protect the underlying device structure and prevent short circuits between the first insulating layer 14 or the second insulating layer 15 and the opposite electrode 2.
[0036] After assembling the complete device described above, it is usually encapsulated externally. External encapsulation can take the form of: wrapping with a polymer layer, painting, or encapsulating in a plastic shell, to obtain the complete device structure.
[0037] Depending on the different device structures, the above-mentioned solutions may have the following embodiments: Example 1: like Figure 1 As shown, an electronic device for overcurrent and overtemperature protection includes a PTC unit 1; In this embodiment, the PTC unit 1 is composed of a single PTC chip 11.
[0038] A first conductive layer 12 is formed on the first surface of the PTC chip 11; The first conductive layer 12 partially covers the first surface; In this embodiment, the first surface is the upper surface direction of the electronic device; The first insulating layer 14 covers the first conductive layer and the exposed portion of the PTC chip; The end face of the first conductive layer 12 is connected to the first electrode 2A in the electrode, and the first electrode 2A is the left electrode of electrode 2; The PTC chip 11 has a second conductive layer 13 formed on its second surface relative to the first surface; In this embodiment, the second surface is the lower surface direction of the electronic device.
[0039] The second conductive layer 13 partially covers the second surface; A second insulating layer 15 is also formed, which covers the exposed portion of the second conductive layer 13 and the PTC chip 11; The end face of the second conductive layer 13 is connected to the second electrode 2B in the electrode, and the second electrode 2B is the right electrode of electrode 2.
[0040] Electrode 2 specifically includes: Vertical conductive posts 21 are respectively disposed on the outermost side of the electronic device and penetrate the electronic device in the vertical direction. Terminal electrode 22 is formed above and below the vertical conductive post, and the terminal electrode extends to the first insulating layer; Metal leads 4 are respectively connected between the end electrodes 22 on both sides of the first surface.
[0041] Specifically, in this embodiment, the PTC unit 1 is a single-layer PTC chip 11, and the electrode 2 has end electrodes 22 on both the upper and lower surfaces. Metal leads 4 are respectively connected between the end electrodes 22 on both sides of the first surface to provide parallel conductive branches. Furthermore, since the device has end electrodes 22 on both the upper and lower surfaces, it can be soldered via the bottom pads or connected to external circuits via the top leads during subsequent soldering.
[0042] Example 2: like Figure 2 As shown, an electronic device for overcurrent and overtemperature protection includes a PTC unit 1; In this embodiment, the PTC unit 1 is composed of a single PTC chip 11.
[0043] A first conductive layer 12 is formed on the first surface of the PTC chip 11; The first conductive layer 12 partially covers the first surface; In this embodiment, the first surface is the upper surface direction of the electronic device; The first insulating layer 14 covers the first conductive layer and the exposed portion of the PTC chip; The end face of the first conductive layer 12 is connected to the first electrode 2A in the electrode, and the first electrode 2A is the left electrode of electrode 2; The PTC chip 11 has a second conductive layer 13 formed on its second surface relative to the first surface; In this embodiment, the second surface is the lower surface direction of the electronic device.
[0044] The second conductive layer 13 partially covers the second surface; A second insulating layer 15 is also formed, which covers the exposed portion of the second conductive layer 13 and the PTC chip 11; The end face of the second conductive layer 13 is connected to the second electrode 2B in the electrode, and the second electrode 2B is the right electrode of electrode 2.
[0045] Electrode 2 specifically includes: Vertical conductive posts 21 are respectively disposed on the outermost side of the electronic device and penetrate the electronic device in the vertical direction. End electrode 22 is formed above or below the vertical conductive post, and the end electrode 22 extends to the first surface or the second surface; Metal leads 4 are respectively connected between the vertical conductive posts 21 on both sides of the second or first surface on the opposite side.
[0046] Specifically, in this embodiment, the PTC unit 1 is a single-layer PTC chip 11 structure. However, unlike Embodiment 1, in this embodiment, only one side (top or bottom) has an end electrode 22 to support the connection of the pads at the corresponding positions. The end electrode 22 on the opposite side is simplified, and the metal lead 4 is directly formed on the first or second insulating layer on this side. The metallized surface formed by vapor deposition is electrically connected to the vertical conductive pillars 21 on both sides. By omitting the end electrode 22 on one side, the thickness of the device can be appropriately reduced to explore more space potential.
[0047] Example 3: like Figure 3As shown, an electronic device with overcurrent and overtemperature protection includes a PTC unit 1; In this embodiment, the PTC unit 1 is composed of a single PTC chip 11.
[0048] A first conductive layer 12 is formed on the first surface of the PTC chip 11; The first conductive layer 12 partially covers the first surface; In this embodiment, the first surface is the upper surface direction of the electronic device; The first insulating layer 14 covers the first conductive layer and the exposed portion of the PTC chip; The end face of the first conductive layer 12 is connected to the first electrode 2A in the electrode, and the first electrode 2A is the left electrode of electrode 2; The PTC chip 11 has a second conductive layer 13 formed on its second surface relative to the first surface; In this embodiment, the second surface is the lower surface direction of the electronic device.
[0049] The second conductive layer 13 partially covers the second surface; A second insulating layer 15 is also formed, which covers the exposed portion of the second conductive layer 13 and the PTC chip 11; The end face of the second conductive layer 13 is connected to the second electrode 2B in the electrode, which is the right electrode of electrode 2.
[0050] Electrode 2 specifically includes: Vertical conductive posts 21 are respectively disposed on the outermost side of the electronic device and penetrate the electronic device in the vertical direction. End electrode 22 is formed above or below the vertical conductive post, and the end electrode 22 extends to the first surface or the second surface; Metal leads 4 are connected between the terminal electrodes 22.
[0051] The electronic device also includes a plastic package 5, which is wrapped around the outside of the vertical conductive post 21 and the upper surface of the electronic device, with the terminal electrodes and metal leads disposed on the lower surface of the device.
[0052] Specifically, in this embodiment, the PTC unit 1 is a single-layer PTC chip 11 structure. However, unlike Embodiment 1, in this embodiment, only one side (either the top or bottom) has an end electrode 22 to support the connection of the pads at the corresponding positions. The end electrode 22 on the opposite side is simplified, and the metal leads 4 are overlapped between the end electrodes 22. The surface of the other side of the device has no structure. This design is to further save vertical space of the device so as to avoid excessive device height after encapsulation in a plastic package 5.
[0053] Example 4: like Figure 4 As shown, an electronic device for overcurrent and overtemperature protection includes a PTC unit 1; In this embodiment, the PTC unit 1 is composed of two or more layers of PTC chips 11.
[0054] At this point, the side of the PTC chip 11 that faces the upper or lower surface of the electronic device and is exposed is defined as the first surface; The surface of PTC chip 11 facing the other layer of PTC chip 11 serves as the second surface; A first conductive layer 12 is formed on the first surface of the PTC chip 11; The first conductive layer 12 partially covers the first surface; The first insulating layer 14 covers the exposed portion of the first conductive layer and the PTC chip 11; The end face of the first conductive layer 12 is connected to the first electrode 2A in the electrode, and the first electrode 2A is the left electrode of electrode 2; A second conductive layer 13 is formed on the second surface of the PTC chip 11; The second conductive layer 13 partially covers the second surface; A second insulating layer 15 is also formed, which covers the exposed portion of the second conductive layer 13 and the PTC chip 11; The end face of the second conductive layer 13 is connected to the second electrode 2B in the electrode, and the second electrode 2B is the right electrode of electrode 2.
[0055] Electrode 2 specifically includes: Vertical conductive posts 21 are respectively disposed on the outermost side of the electronic device and penetrate the electronic device in the vertical direction. Terminal electrode 22 is formed above and below the vertical conductive post, and the terminal electrode extends to the first insulating layer; Metal leads 4 are respectively connected between the end electrodes 22 on both sides of the first surface.
[0056] Specifically, for some extreme high-current scenarios, in order to achieve better current carrying capacity, in this embodiment, the PTC unit 1 is adjusted to be composed of two or more layers of PTC chips 11. By increasing the number of PTC chip layers, the current carrying capacity is improved, and at the same time, a corresponding first conductive layer 12 and a second conductive layer 13 are set for each PTC unit 1 to form multiple parallel conductive paths, so as to avoid excessive current on a single first conductive layer 12 and a single conductive layer 13.
[0057] In addition, to address this issue, the original metal leads 4 are overlapped between the upper and lower end electrodes 22 to further improve the current carrying capacity of the device, while compressing the thickness of the PTC chip 11, thereby greatly improving the current carrying capacity of the device.
[0058] In this embodiment, a low-melting-point metal is also formed on the metal lead 4 as a fluxing layer 6, and the fluxing layer 6 melts earlier than the metal lead 4.
[0059] To address the issue of potentially slow response from the PTC chip 11 under such conditions, a flux layer 6 is further formed on the metal lead 4. When the PTC chip 11 heats up due to high current in an overcurrent scenario or encounters overtemperature, the flux layer 6 melts first to promote the melting of the metal lead 4, thereby ensuring cutting efficiency.
[0060] The above are merely preferred embodiments of the present invention and are not intended to limit the implementation methods and protection scope of the present invention. Those skilled in the art should recognize that any equivalent substitutions and obvious changes made based on the description and illustrations of the present invention should be included within the protection scope of the present invention.
Claims
1. An electronic device for overcurrent and overtemperature protection, characterized in that, Includes PTC unit; Electrodes are formed at both ends of the PTC unit along the height direction; A first insulating layer is formed on the first surface of the PTC unit, and metal leads are formed on the first insulating layer; The metal leads are connected between the electrodes and will melt in the event of an over-temperature or over-current fault.
2. The electronic device according to claim 1, characterized in that, The electrode includes: Vertical conductive pillars are respectively disposed on the outermost side of the electronic device and penetrate the electronic device in a vertical direction. At least one end electrode is formed above and / or below the vertical conductive post, the end electrode extending to the surface of the electronic device.
3. The electronic device according to claim 2, characterized in that, The metal leads are respectively connected between the end electrodes on both sides.
4. The electronic device according to claim 1, characterized in that, The PTC unit includes a layer of PTC chip; A first conductive layer is formed on the first surface of the PTC chip; The first conductive layer partially covers the first surface; The first insulating layer covers the first conductive layer and the exposed portion of the PTC chip; The end face of the first conductive layer is connected to the first electrode in the electrode; The PTC chip has a second conductive layer formed on its second surface relative to the first surface; The second conductive layer partially covers the second surface; A second insulating layer is also formed, which covers the second conductive layer and the exposed portion of the PTC chip; The end face of the second conductive layer is connected to the second electrode in the electrode.
5. The electronic device according to claim 1, characterized in that, The PTC unit contains at least two layers of PTC chips; The side of the PTC chip facing the upper or lower surface of the electronic device and exposed is designated as the first surface; The surface of the PTC chip facing the PTC chip in the other layer serves as the second surface; A first conductive layer is formed on the first surface; The first conductive layer partially covers the first surface; The first insulating layer covers the first conductive layer and the exposed portion of the PTC chip; The end face of the first conductive layer is connected to the first electrode in the electrode; The PTC chip has a second conductive layer formed on its second surface relative to the first surface; The second conductive layer partially covers the second surface; A second insulating layer is also formed, which covers the exposed portion of the second conductive layer and the second surface; The end face of the second conductive layer is connected to the second electrode in the electrode.
6. The electronic device according to claim 1, characterized in that, A low-melting-point metal is formed on the metal lead as a fluxing layer, and the fluxing layer melts earlier than the metal lead.
7. The electronic device according to claim 1, characterized in that, The metal leads are formed on the first surface with one or a combination of straight lines, S-lines, curves, irregular lines, and etching patterns. The diameter of the metal lead wire can be one or a combination thereof, such as equal width, dumbbell shape, or uneven thickness.
8. The electronic device according to claim 2, characterized in that, The electronic device further includes a plastic encapsulation package, which is wrapped around the outside of the vertical conductive post and the upper surface of the electronic device, and the terminal electrode and the metal lead are disposed on the lower surface of the device.
9. The electronic device according to claim 1, characterized in that, The electrode includes: Vertical conductive pillars are respectively disposed on the outermost side of the electronic device and penetrate the electronic device in a vertical direction. A terminal electrode is formed above or below the vertical conductive post and extends to the surface of the electronic device. The metal leads are respectively connected between the vertical conductive posts on both sides.
10. The electronic device according to claim 1, characterized in that, The metal lead is one of gold, silver, copper, nickel, tin, aluminum, iron, or an alloy thereof.