Embedded capacitive material for single photon emission computed tomography

Abstract

For single photon emission computed tomography (SPECT) detectors, embedded capacitive material (ECM) is used in printed circuit boards (PCB) with semiconductor detectors. High voltage (HV) filtering and / or blocking capacitors are formed from ECM. ECM is less disruptive to radiation or emissions to be detected by the semiconductor detectors compared to surface mounted capacitors.

Description

Technical Field

[0001] This embodiment relates to a semiconductor detector for single-photon emission computed tomography (SPECT). Background Technology

[0002] For semiconductor (e.g., zinc cadmium telluride-CZT) pixelated detectors in SPECT, a high voltage (HV) bias is applied to the cathode side of the detector. The cathode signal is amplified and measured together with the pixel anode signal at the bottom of the detector. A high-voltage DC-blocking capacitor is required between the cathode and the amplifier to prevent HV bias. This DC-blocking capacitor is located above the semiconductor detector to minimize trace inductance and parasitic capacitance. After blocking, the resulting low-voltage cathode signal can be safely passed to the measurement circuitry (amplifier). An HV filter capacitor can also be located above the semiconductor detector with the DC-blocking capacitor. Both the HV filter capacitor and the HV DC-blocking capacitor on top of the semiconductor detector cause uneven attenuation of sensed radioactivity. Due to the nature of commercially available HV capacitor construction (e.g., made of high-Z materials such as nickel (Ni) and silver palladium (AgPd), titanium oxide (TiO2), or barium titanate (BaTiO3)) and packaged in a small volume), HV capacitors interfere with SPECT detection. Summary of the Invention

[0003] By way of introduction, the preferred embodiments described below include methods and systems for SPECT detectors. Embedded capacitor material (ECM) is used in a printed circuit board (PCB) with a semiconductor detector. HV filtering and / or DC blocking capacitors are formed by the ECM. The ECM has minimal interference with the radiation or emissions to be detected by the semiconductor detector.

[0004] In a first aspect, a single-photon emission computed tomography (SPECT) detector system is provided. The cathode is on a first surface of the CZT detector. The anode electrode is on a second surface of the CZT detector. On the CZT detector, the second surface is opposite to the first surface. A first printed circuit board is electrically connected to the cathode. The printed circuit board has an ECM electrically connected to the cathode.

[0005] In a second aspect, a method for receiving signals in a SPECT detector is provided. A voltage bias is applied to the cathode of the SPECT detector via a first printed circuit assembly mounted to the cathode. The cathode signal is received via a first ECM of the first printed circuit assembly. A SPECT image is generated based on the cathode signal.

[0006] In a third aspect, the SPECT system includes a housing forming a patient area; and a gamma camera adjacent to the patient area. The gamma camera includes a semiconductor detector stacked between a first printed circuit board and a second printed circuit board. The first printed circuit board has a first embedded capacitor material connected to the cathode of the semiconductor detector.

[0007] The following illustrative embodiments summarize other aspects or features of the first, second, and third aspects described above. An aspect or feature used in one type of claim (e.g., a method or system) may be used in other types.

[0008] This invention is defined by the following claims, and nothing in this section should be construed as limiting those claims. Further aspects and advantages of the invention are discussed below in conjunction with preferred embodiments and may be claimed thereafter, either independently or in combination. Attached Figure Description

[0009] The components and drawings are not necessarily to scale; instead, the focus is on illustrating the principles of the invention. Furthermore, similar reference numerals are used throughout the drawings to refer to corresponding parts in different views.

[0010] Figure 1 An embodiment of a SPECT detector circuit is shown; Figure 2 An example semiconductor detector arrangement is shown; Figure 3 An embodiment of a PCB with an ECM is shown; Figure 4 It is a cross-sectional view of a SPECT imager or system; and Figure 5 This is a flowchart of an example embodiment of a method for using a semiconductor detector in SPECT. Detailed Implementation

[0011] Various methods can be used to provide HV capacitance to the cathode on top of the semiconductor detector in SPECT (e.g., the patient-facing side). The HV bias circuitry and capacitor can be located on one side next to the detector. This will work well for systems with a single detector module or multiple detector modules with only 2 rows or 2 columns (2×2, 2×N, or N×2). It will not work well when detector modules are stacked on top of each other and / or in more than 2 rows or 2 columns.

[0012] In another approach, the HV bias circuit and capacitor are placed at the bottom of the detector. The HV conductor then extends along one side of the detector surface, generating an additional unwanted electric field. The space beneath the detector typically already contains sensitive low-voltage electronics, making it very difficult to add the HV bias circuit due to minimum separation requirements. Placing it at the bottom also attenuates radioactivity passing through modules in the Compton camera system.

[0013] In another approach, the HV bias circuit and capacitors are located on top of the semiconductor detector. To reduce the attenuation of the radiation to be detected, multiple smaller capacitors are used instead of larger ones. The thickness of a single HV capacitor can be reduced by using multiple thinner capacitors. The availability of commercially available HV capacitors, which can be used in limited spaces, makes this approach challenging.

[0014] The HV bias circuitry is partially housed on a printed circuit assembly (PCA) located on top of the semiconductor detector. The PCA is formed from a printed circuit board (PCB). The ECM within the PCB provides sufficient capacitance in space while minimizing radiated attenuation. As part of the HV bias PCB, the ECM replaces the commercially available HV capacitors on top of the HV PCA (PCB assembly). The ECM's distribution over a larger surface area than commercially available capacitors improves non-uniform attenuation in the semiconductor detector. The ECM is used for HV filtering capacitors and / or HV DC blocking capacitors.

[0015] In this arrangement, the HV component is kept away from the low-voltage sensitive circuitry. The cathode signal pickup path is very short, resulting in lower noise. No unwanted electric fields are introduced near the detector and the low-voltage sensitive circuitry. The positioning on top of the semiconductor detector allows for the construction and / or arrangement of multi-detector modules for the Compton camera. The non-uniform attenuation caused by the HV capacitor is reduced compared to commercially available surface-mount HV capacitors.

[0016] Figure 1 The circuitry 100 or more of an example semiconductor detector is shown. An HV bias circuit 110 and a low-voltage signal circuit 160 are connected to the cathode of a CZT detector 140. A CZT is used in this example, but other semiconductor detectors could be used. Figure 1 In this model, the CZT detector is represented by a current source, a resistor, and a capacitor connected in parallel between the cathode and anode. Other models representing CZT or other semiconductor detectors can be used.

[0017] HV bias circuit 110 includes resistor 114 and HV capacitor 116, thereby forming a filter that receives voltage from voltage source 112. Voltage source 112 is a DC HV (e.g., 500 volts or higher) source. This voltage is high relative to the low voltage of signal circuit 160, for example, high (e.g., 100 times or more higher) relative to the low 2, 3, 4, or 5 volt operation of signal circuit 160. In one arrangement, HV is 1000, 1500, 2000, 3000, 4000, or 5000 volts. Based on the HV provided by source 112, filter capacitor 116 can have any of a variety of operating voltages (WV), such as 3000 WV for 2000 volts HV. HV is the bias voltage applied to the cathode of CZT detector 140.

[0018] Since the cathode signal will be picked up from the cathode, the HV circuit 110 includes a DC blocking arrangement formed by a DC blocking resistor 118 and a DC blocking capacitor 120. The DC blocking arrangement, including the DC blocking capacitor 120, blocks the DC HV on the cathode and allows only relatively low voltage (e.g., less than 3 volts) cathode probe signals to be routed to the cathode signal amplifier 162 of the signal circuit 160. Based on the HV provided by the source 112, the DC blocking capacitor 120 can have any of a variety of WVs, such as 3000 WV for a 2000 volt HV.

[0019] Signal circuit 160 includes signal processing components, such as amplifiers 162 and 164, which operate as preamplifiers for receiving cathode and anode signals. Different amplifiers 162 and 164 are provided for each signal (such as each anode signal in the case of multiple anode electrodes on the CZT detector 140, and the cathode signal). Other circuitry, such as filters, transistors, and / or signal processors, can be used. This circuitry can be formed from application-specific integrated circuits or other semiconductors with transistors.

[0020] Figure 1 This describes a circuit arrangement. Other circuitry for the HV bias circuit 110 and / or signal circuit 160 may be used. Additional, different, or fewer components may be used.

[0021] Figure 2This is a block diagram or cross-sectional view of one embodiment of the SPECT detector system 200. The HV bias circuit 110 and signal circuit 160 are shown as printed circuit assemblies (PCAs) 202 and 206 on PCBs 204 and 208, respectively. The semiconductor detector 140 is a piece of semiconductor material between the cathode 210 and the anode 220 (e.g., the cathode 210 and anode 220 are electroplated or deposited or formed on the top and bottom surfaces of the detector 140). Flexible circuit material 230 is a jumper between the HV bias PCA 202 and the signal PCA 206. Additional, different, or fewer components may be provided, for example, having only one, three, or more anodes 220.

[0022] The SPECT detector 140 is a semiconductor. Detector 140 is a solid-state detector. Any material can be used, such as Si, CZT, CdTe, and / or other materials. CZT is used in the examples herein. The SPECT detector 140 is fabricated from a wafer of any thickness, such as approximately 10 mm for CZT. Any size can be used, such as approximately 5 × 5 cm. Figure 2 The square cross-sectional shape of the detector 140 as viewed from the side is shown. Other shapes besides square, such as rectangles or hexagons, can be used. Similarly, squares or other shapes are provided when viewed from the top or bottom.

[0023] Detector 140 is designed and configured to detect gamma emissions, such as those from a patient. For example, semiconductors are formed as an array of silicon photon multiplier units.

[0024] Detector 140 is a pixelated detector. Detector 140 forms a sensor array. For example, a 2.5 × 2.5 cm or 5 × 5 cm detector 140 is an 11 × 11 or 21 × 21 pixel array of detection units with a pixel pitch of approximately 2.2 mm. Each detection unit in this array can individually detect emission events. Other numbers of pixels, pixel pitches, and / or array sizes can be used. Grids other than rectangles can be used, such as a hexagonal distribution of pixels or detection units.

[0025] Anode electrode 220 and cathode electrode 210 are disposed on opposite surfaces of detector 140 (e.g., cathode on the top side and anode on the bottom side). In the example herein, anode electrode 220 uses a lower voltage (e.g., 3 volts or less). Cathode electrode 210 is a single electrode, but can be divided into separate electrodes. Anode electrode 220 is a conductor exposed on the bottom surface of detector 140 (away from the patient). Anode electrodes 220 have the same spacing and area as the detection unit and are electrically isolated from each other for individual connection to the detection unit of detector 140.

[0026] Circuits 110 and 160 are formed as PCAs 202 and 206 on PCBs 204 and 208. The HV PCA 202 is connected to the cathode 210. For example, the electrode pads of the HV PCA 202 are connected to the cathode 210 via rough contacts maintained by epoxy bonding. As another example, the cathode 210 is formed on the HV PCA 202 and bonded to the detector 140, for example, with conductive adhesive. Other connections, such as soldering or flip-chip bonding, can be used.

[0027] Similarly, signal PCA 206 is connected to anode 220. For example, a rough contact held together by epoxy bonding connects the electrode pads of signal PCA 206 to anode 220. As another example, anode 220 is formed on signal PCA 206 and bonded to detector 140, for example, with conductive adhesive. Other connections, such as soldering or flip-chip bonding, can be used.

[0028] PCBs 204 and 208 of PCA 202 and 206 are laminated non-conductive materials on which conductive traces, vias, pads, and / or other structures may be deposited or included. Conductors may be on and / or within the laminated non-conductive layers. Electrical components may be soldered or bonded to PCBs 204 and 208 to form PCA 202 and 206. For example, ASIC pads may be soldered or flip-chip bonded to PCB 208 to form signal PCA 206. The ASIC is formatted for processing. Multiple ASICs may be provided, for example, nine ASICs in a 3×3 grid of detector 140.

[0029] Other components, such as resistors, capacitors, inductors, relays, and / or transformers, can be connected to form PCA202, 206. Conductors are routed between components to form circuits, such as HV circuit 110 on HV PCA 202 and signal circuit 160 on signal PCA 206. These components provide analog and / or digital signal processing. Conductors are routed between devices to filter, amplify, determine timing, determine energy, and / or otherwise process signals received from the detection unit of detector 140.

[0030] The HV PCB 204 and the corresponding HV PCA 202 include one or more ECMs 240, 242. The ECM is constructed as a very thin layer of dielectric material (e.g., 0.5 ounces or 18 micrometers thick) sandwiched between thin copper sheets. Replacing the HV capacitor with ECMs 240, 242 directly on or within the HV bias PCA 202 contributes to the high attenuation and highly non-uniform sensitivity of the detector 140. Since the ECMs 240, 242 can be distributed over any area, such as 30%, 40%, 50%, 60%, 70%, or more of the surface area of ​​PCB 204 and / or detector 140, they provide a more uniform radiation effect compared to the HV capacitor as a mounting component. Non-uniformity generated by the HV bias PCA 202 may still exist.

[0031] Figure 3 An example of HV PCB 202 is shown. Two ECMs 240 and 242 are stacked within PCB 300. A non-conductive material layer 310 surrounds the ECMs 240 and 242. Although two ECMs 240 and 242 are shown, one, three, or more ECMs 240 and 242 may be included. The structure of the ECMs 240 and 242 is embedded within PCB 300. In the example shown, the ECMs 240 and 242 are parallel when viewed from the top or bottom and extend over a large area of ​​PCB 300. Other arrangements may be used, such as having two ECMs 240 and 242 on different halves of the same layer of PCB 300.

[0032] Refer again Figure 2 One of the ECMs 240 is used as a filter capacitor 116, and is therefore connected to ground and the input from the voltage source 112. The filter capacitor 116 formed by the ECM 240 is connected in parallel with the voltage source. The other of the ECMs 242 is used as a DC blocking capacitor 120, and is therefore connected from the cathode 210 to the signal PCA 206. The DC blocking capacitor 120 formed by the ECM 242 is connected in series with the amplifier 162 of the voltage source 112 and the signal PCA 206. This electrical connection allows the cathode signal to be received by the ASIC or other signal processing components of the signal PCA 206. In an alternative embodiment, one of the capacitors 116, 120 is formed by a capacitor mounted to the PCB 204.

[0033] A jumper wire extends from HV PCA 202 to signal PCA 206. The jumper wire can be an insulated or uninsulated conductor. In one method, the jumper wire is formed from a strip of flexible circuit material with traces. The traces on the flexible circuit material electrically connect the cathode 210 to the signal PCA 206 via ECM 242. A PCB can be used instead of the flexible circuit material.

[0034] The SPECT detector system 200 can be modular or formed as modules. One or more such detector systems 200 can be tiled to create a larger SPECT detector or gamma camera. Any number of rows and / or columns can be provided, such as 10×10, 8×16, or 64×64 arrangements. The flexible circuit material 230 is thin enough to allow side-by-side contact of the detector systems 200, thereby forming an array of such systems 200. In another approach, the SPECT detector systems 200 can be stacked from top to bottom, for example, to form the trap and scattering detector of a Compton camera. Spacers or empty volumes can be provided between any adjacent SPECT detector systems 200.

[0035] Figure 4 A SPECT detector system 200 used in a SPECT system or imager 400 is shown. The SPECT detector system 200 is used as part of a gamma camera 406 in the SPECT system 400.

[0036] SPECT system 400 is an imaging system for imaging a patient on bed 404. Gamma camera 406 (e.g., detector 140, HVPCA 110 with ECMs 240, 242, and / or signal PCA 160) formed by SPECT detector system 200 detects emissions from the patient lying on bed 404.

[0037] The SPECT system 400 includes a housing 402. The housing 402 is made of metal, plastic, fiberglass, carbon (e.g., carbon fiber), and / or other materials. In one embodiment, different portions of the housing 402 are made of different materials.

[0038] The housing 402 forms a patient area in which the patient is positioned for imaging. The bed 404 can move the patient within the patient area to scan different parts of the patient at different times. Alternatively or additionally, a pedestal (e.g., one or more SPECT detector systems 200) holding the gamma camera 406 is used to move the gamma camera 406.

[0039] Gamma camera 406 is located adjacent to the patient area. Gamma camera 406 includes one or more semiconductor detectors 140, such as pixelated detectors with detection units, each with a separate electrode. The top of detector 140 is positioned closest to the patient for receiving emissions from the patient. The HV PCA 202 of the SPECT detector system 200 is thus positioned between the patient (emission source) and detector 140. The blocking and / or filtering capacitance for the HV bias PCA 202, by including ECMs 240, 242 instead of surface-mounted capacitors, results in minimal variation in detection sensitivity across the surface of detector 140.

[0040] Any number of SPECT detection systems 200 can be used to form a gamma camera 406. Figure 4 A cross-section of three SPECT detector systems 200 tiled to form a gamma camera 406 is shown. Any number of SPECT detector systems 200 can be tiled and / or stacked to form the gamma camera 406. The SPECT detector systems 200 can be combined (e.g., stacked and / or tiled along a line extending from the patient in a plane parallel to the patient) to form a gamma camera 406 of any shape and / or size. In another approach, the SPECT detector systems 200 are combined to form the trap and scatter detector of a Compton camera, such as two parallel plates of tiled SPECT detector systems 200 (e.g., stacked with or without spacers).

[0041] Figure 5 An embodiment of a method for receiving signals in a SPECT detector is shown. By including an ECM for capacitance in the HV bias PCA 202, the emission transmitted from the patient to detector(s) 140 is exposed to less attenuation and / or attenuation variation.

[0042] This method is by Figure 1 , Figure 2 , Figure 4 The system and / or another system implementation. These actions are performed in the order shown (i.e., from top to bottom or in numerical order) or another order. For example, actions 502 and 504 are performed when actions 506 and 508 occur. As another example, actions 506 and 508 occur simultaneously. Additional, different, or fewer actions may be provided. For example, action 510 is not performed. As another example, actions for configuring the SPECT system 400 are provided.

[0043] In action 502, the HV signal (DC current) is filtered to be applied as a bias voltage to cathode 210. HV source 112 provides the HV voltage, which is then filtered. Analog filtering is provided, for example, using a resistor in series with HV source 112 and a capacitor to ground in parallel. This capacitor is provided by ECM 240 in HV PCB 204.

[0044] In action 504, the filtered HV is supplied to cathode 210. HV passes through ECM 240, which is connected to the cathode via resistor 118 (see [link to ECM 240]). Figure 1 ).

[0045] In action 506, a cathode signal is received. The emission from the patient interacts with detector 140, resulting in electrical signals at the anode and cathode. This interaction may cause some changes when the HV bias is connected to the cathode. A cathode signal is received when the HV applied to the cathode has or does not change due to the emission interaction.

[0046] To protect the electronic components used to measure the cathode signal, a DC blocking capacitor 120 is used. The DC blocking capacitor 120 blocks the DC HV voltage.

[0047] DC blocking capacitor 120 is ECM 242 of HV PCB 204. The cathode signal is received via ECM 242 of HV PCA 202. The cathode signal is routed to electronics used for measurement (e.g., amplifier 162), such as electronics at least partially based on signal PCA 206. With signal PCA 206 mounted on the opposite side of SPECT detector 140 from HV PCA 202, the cathode signal is routed on jumpers between PCBs 204 and 208. In one method, the cathode signal is routed on a trace on a flexible circuit material 230.

[0048] In operation 508, anode 220 receives an anode signal generated by the interaction between the transmitter and detector 140. The anode signal from anode 220 is received by the electronics of signal PCA 206. For example, preamplifier 164 receives the anode signal from one of anodes 220.

[0049] In action 510, the processor generates a SPECT image based on the cathode and anode signals. The anode signal is used to measure the location, time, and / or energy of each detected emission. Emissions are counted by location over time. The cathode signal is used as a reference (along with the anode signal) to determine the depth of interaction to improve energy resolution. Measuring the depth of interaction in a thick CZT detector allows for improved imaging and spectroscopy of hard X-ray imaging above 100 keV. The interaction depth information is used to correct events at the detector's "focal plane" for proper imaging and can be used to improve the detector's energy resolution at high energies by allowing event-based corrections for incomplete charge collection. Background suppression is also improved by allowing low-energy events from the rear and sides of the detector to be suppressed. Depth sensing is performed by simultaneously measuring the cathode and anode signals, where the depth of interaction at a given energy is proportional to the cathode / anode ratio. The energy of the anode signal relative to the cathode signal can be thresholded to distinguish emissions from radiopharmaceuticals within the patient from background radiation or noise, making it more likely that emission events originating from within the patient are being counted.

[0050] Counts from one or more SPECT detector systems 200 and their relative positions are used to generate images. Using an optimization or machine learning model, an image representing the spatial distribution of emission events within the patient's body is generated from counts at different locations of gamma camera 406. Each of the modules or SPECT detector systems 200 applies a voltage bias in action 504 and receives signals in actions 506, 508 to measure counts. These counts are used to generate SPECT images.

[0051] Since ECMs 240 and 242 are used in the HV bias PCA 202, they provide less interference or variation compared to using surface-mount capacitors. The image obtained from the received signal may have fewer artifacts or noise caused by capacitance attenuation.

[0052] The following is a list of non-limiting illustrative embodiments disclosed herein.

[0053] Illustrative Example 1. A single-photon emission computed tomography (SPECT) detector system, comprising: a zinc cadmium telluride (CZT) detector; a cathode on a first surface of the CZT detector; an anode electrode on a second surface of the CZT detector, the second surface being opposite to the first surface on the CZT detector; and a first printed circuit board electrically connected to the cathode, the printed circuit board including embedded capacitor material electrically connected to the cathode.

[0054] Illustrative Example 2. The SPECT detector system according to Illustrative Example 1, wherein an embedded capacitive material is electrically connected to the cathode as a DC blocking capacitor.

[0055] Illustrative Example 3. The SPECT detector system according to any one of Illustrative Examples 1 or 2 further includes a second printed circuit board electrically connected to the anode electrode, wherein the first printed circuit board is configured as a high-voltage biasing component, and the second printed circuit board is configured as a signal processing component operating at a lower voltage than the high-voltage biasing board.

[0056] Illustrative Example 4. The SPECT detector system according to Illustrative Example 3, wherein the flexible circuit material electrically connects the cathode signal to the signal processing component through an embedded capacitor material.

[0057] Illustrative Example 5. The SPECT detector system according to Illustrative Example 4, wherein the signal processing component includes an application-specific integrated circuit having a second amplifier connected to receive a second signal from the cathode and a first amplifier connected to receive a signal from the anode electrode.

[0058] Illustrative Example 6. A SPECT detector system according to any one of Illustrative Examples 1-5, wherein an embedded capacitive material forms two capacitors, the first of the two capacitors comprising a DC blocking capacitor and the second of the two capacitors comprising a filter capacitor, the second capacitor being connected in parallel with a voltage source and the first capacitor being connected in series with a voltage source.

[0059] Illustrative Example 7. A SPECT detector system according to any one of Illustrative Examples 1-6, wherein a first printed circuit board is directly connected to the cathode via a rough contact.

[0060] Illustrative Example 8. A SPECT detector system according to any one of Illustrative Examples 1-7, wherein the CZT detector, cathode, anode electrode and first printed circuit board include a first module with additional modules laid out.

[0061] Illustrative Example 9. A method for receiving a signal in a single-photon emission computed tomography (SPECT) detector, the method comprising: applying a voltage bias to the cathode of the SPECT detector through a first printed circuit assembly mounted to the cathode; receiving a cathode signal through a first embedded capacitor material of the first printed circuit assembly; and generating a SPECT image based on the cathode signal.

[0062] Illustrative Example 10. The method according to Illustrative Example 9, wherein receiving a cathode signal includes routing the cathode signal through a first embedded capacitor material of a first printed circuit assembly to a second printed circuit assembly mounted on the opposite side of the first printed circuit assembly of a SPECT detector; and further includes: receiving an anode signal as the second printed circuit assembly; wherein generating a SPECT image includes generating based on the cathode signal and the anode signal.

[0063] Illustrative Example 11. The method according to Illustrative Example 10, wherein routing includes routing on traces in a flexible circuit material.

[0064] Illustrative Example 12. The method according to any one of Illustrative Examples 9-11 further includes filtering the voltage bias using a second embedded capacitor on the first printed circuit assembly.

[0065] Illustrative Example 13. The method according to any one of Illustrative Examples 9-12, wherein generating a SPECT image includes generating it using counts received from a plurality of modules, each module applying a voltage bias and receiving a corresponding cathode signal from the cathode signals.

[0066] Illustrative Example 14. A single-photon emission computed tomography (SPECT) system includes: a housing forming a patient region; and a gamma camera adjacent to the patient region, the gamma camera including a semiconductor detector stacked between a first printed circuit board and a second printed circuit board, the first printed circuit board including a first embedded capacitor material connected to the cathode of the semiconductor detector.

[0067] Illustrative Example 15. The SPECT system according to Illustrative Example 14, wherein a first printed circuit board and a second printed circuit board are connected to a semiconductor detector via rough contacts.

[0068] Illustrative Example 16. The SPECT system according to any one of Illustrative Examples 14 or 15, wherein the semiconductor detector comprises a zinc cadmium telluride detector.

[0069] Illustrative Example 17. The SPECT system according to any one of Illustrative Examples 14-16, wherein a first embedded capacitor material is configured as a DC blocking capacitor electrically connected to the cathode.

[0070] Illustrative Example 18. The SPECT system according to Illustrative Example 17, wherein the DC blocking capacitor is electrically connected to the second printed circuit board via a jumper.

[0071] Illustrative Example 19. A SPECT system according to any one of Illustrative Examples 14-18, wherein a first printed circuit board includes a second embedded capacitor material configured to filter a cathode voltage bias.

[0072] Illustrative Example 20. The SPECT system according to any one of Illustrative Examples 14-19, wherein the gamma camera includes a plurality of semiconductor detectors.

[0073] Individuals with male or female gender identities are also included within the terminology, independent of the use of grammatical terms. Although the invention has been described above with reference to various embodiments, many changes and modifications can be made without departing from the scope of the invention. Therefore, it is intended that the foregoing detailed description be considered illustrative rather than restrictive, and it should be understood that the following claims (including all equivalents) are intended to define the spirit and scope of the invention.

Claims

1. A single-photon emission computed tomography (SPECT) detector system, comprising: Zinc cadmium telluride (CZT) detector; Cathode on the first surface of the CZT detector; The anode electrode is located on a second surface of the CZT detector, which is opposite to the first surface of the CZT detector; and A first printed circuit board electrically connected to the cathode, the first printed circuit board including embedded capacitor material electrically connected to the cathode.

2. The SPECT detector system of claim 1, wherein the embedded capacitive material is electrically connected to the cathode as a DC blocking capacitor.

3. The SPECT detector system of claim 1 further includes a second printed circuit board electrically connected to the anode electrode, wherein the first printed circuit board is configured as a high-voltage biasing component, and the second printed circuit board is configured as a signal processing component operating at a lower voltage than the high-voltage biasing board.

4. The SPECT detector system of claim 3, wherein the flexible circuit material electrically connects the cathode signal to the signal processing component via an embedded capacitor material.

5. The SPECT detector system of claim 4, wherein the signal processing component comprises an application-specific integrated circuit (ASIC) having a second amplifier configured to receive a second signal from the cathode and a first amplifier configured to receive a signal from the anode electrode.

6. The SPECT detector system of claim 1, wherein the embedded capacitive material forms two capacitors, the first of the two capacitors comprising a DC blocking capacitor and the second of the two capacitors comprising a filter capacitor, the second capacitor being connected in parallel with a voltage source and the first capacitor being connected in series with a voltage source.

7. The SPECT detector system of claim 1, wherein the first printed circuit board is directly connected to the cathode via rough contacts.

8. The SPECT detector system of claim 1, wherein the CZT detector, cathode, anode electrode and first printed circuit board include a first module with additional modules laid out.

9. A method for receiving a signal in a single-photon emission computed tomography (SPECT) detector, the method comprising: A voltage bias is applied to the cathode of the SPECT detector by means of a first printed circuit assembly mounted on the cathode; The cathode signal is received through the first embedded capacitor material of the first printed circuit assembly; and SPECT images are generated based on cathode signals.

10. The method of claim 9, wherein receiving the cathode signal includes routing the cathode signal through a first embedded capacitor material of the first printed circuit assembly to a second printed circuit assembly mounted on the side of the SPECT detector opposite to the first printed circuit assembly; and further includes: It serves as a second printed circuit assembly that receives the anode signal; The generation of SPECT images includes the generation based on cathode and anode signals.

11. The method of claim 10, wherein routing comprises routing on traces in the flexible circuit material.

12. The method of claim 9, further comprising filtering the voltage bias using a second embedded capacitor on the first printed circuit assembly.

13. The method of claim 9, wherein generating a SPECT image comprises generating it using counts received from a plurality of modules, each module applying a voltage bias and receiving a corresponding cathode signal from the cathode signals.

14. A single-photon emission computed tomography (SPECT) system, comprising: Forming an outer shell for the patient area; and A gamma camera adjacent to the patient area, the gamma camera including a semiconductor detector stacked between a first printed circuit board and a second printed circuit board, the first printed circuit board including a first embedded capacitor material connected to the cathode of the semiconductor detector.

15. The SPECT system of claim 14, wherein the first printed circuit board and the second printed circuit board are connected to the semiconductor detector via rough contacts.

16. The SPECT system of claim 14, wherein the semiconductor detector comprises a zinc cadmium telluride detector.

17. The SPECT system of claim 14, wherein the first embedded capacitor material is configured as a DC blocking capacitor electrically connected to the cathode.

18. The SPECT system of claim 17, wherein the DC blocking capacitor is electrically connected to the second printed circuit board via a jumper.

19. The SPECT system of claim 14, wherein the first printed circuit board includes a second embedded capacitor material configured to filter the cathode voltage bias.

20. The SPECT system of claim 14, wherein the gamma camera comprises a plurality of semiconductor detectors.

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