Systems, methods, apparatus, and articles of manufacture to protect a circuit during avalanche current

Abstract

The present application relates to systems, methods, apparatuses, and articles of manufacture that protect a circuit during an avalanche current. An example apparatus includes a first transistor (212) having a control terminal, a first terminal adapted to be coupled to a first resistor (112), and a second terminal adapted to be coupled to a second resistor (114). The apparatus includes a second transistor (222) having a control terminal, a first terminal, and a second terminal, the control terminal adapted to be coupled to a ground terminal, the first terminal coupled to the first terminal of the first transistor (212). The apparatus includes a driver (210) having a supply terminal, an input, and an output, the supply terminal coupled to the second terminal of the second transistor (222), the output coupled to the control terminal of the first transistor (212). The apparatus includes a temperature-based control circuit (220) having a supply terminal coupled to the second terminal of the second transistor (222) and an output coupled to the input of the driver (210).

Description

[0001] Cross-references to related applications

[0002] This patent application claims the benefit and priority of U.S. Provisional Patent Application No. 63 / 730,628, filed on December 11, 2024, which is hereby incorporated herein by reference in its entirety. Technical Field

[0003] This specification relates generally to circuit protection, and more specifically to systems, methods, apparatus and articles for protecting circuits during avalanche currents. Background Technology

[0004] In electrical systems, circuit protection is crucial for providing safety and reliability by preventing damage from overcurrent, overvoltage, short circuits, and other faults. Common types of circuit protection include fuses, circuit breakers, metal oxide varistors (MOVs), transient voltage suppressors (TVS), diodes, and thermal protection devices. Furthermore, electronic protection circuits such as crowbar circuits and current limiters are often integrated into power systems to provide more precise and reusable protection technologies. Each type of circuit protection plays a critical role depending on the application and its target response time, durability, and cost. Summary of the Invention

[0005] For systems, methods, apparatuses, and articles of manufacture that protect circuits during avalanche currents, one example apparatus includes a first transistor having a control terminal, a first terminal adapted to be coupled to a first resistor, and a second terminal adapted to be coupled to a second resistor. The apparatus includes a second transistor having a control terminal, a first terminal, and a second terminal, the control terminal being adapted to be coupled to a ground terminal, and the first terminal being coupled to the first terminal of the first transistor. The apparatus includes a driver having a supply terminal, an input, and an output, the supply terminal being coupled to the second terminal of the second transistor, and the output being coupled to the control terminal of the first transistor. The device includes temperature-based control circuitry having a supply terminal coupled to a second terminal of a second transistor and an output coupled to an input of a driver. The temperature-based control circuitry is capable of: monitoring a temperature sensor to determine a measured temperature indicating the temperature of a first transistor; providing a first signal to the driver in response to a measured temperature greater than or equal to a fault threshold, the driver controlling the first transistor in response to the first signal; providing a second signal to the driver in response to a measured temperature less than a lower threshold, the driver controlling the first transistor in response to the second signal; and providing a third signal to the driver in response to a measured temperature greater than or equal to an upper threshold, the driver controlling the first transistor in response to the third signal, the upper threshold being less than the fault threshold. Other examples are described.

[0006] For systems, methods, apparatus, and articles of manufacture that protect circuits during avalanche currents, one example method includes using temperature-based control circuitry to determine a measured temperature indicating the temperature of a transistor. The method includes: in response to the measured temperature being greater than or equal to a fault threshold, providing a first signal to a driver using the temperature-based control circuitry, the driver controlling the transistor in response to the first signal. The method includes: in response to the measured temperature being less than a lower threshold, providing a second signal to the driver using the temperature-based control circuitry, the driver controlling the transistor in response to the second signal. The method includes: in response to the measured temperature being greater than or equal to an upper threshold, providing a third signal to the driver using the temperature-based control circuitry, the driver controlling the transistor in response to the third signal, the upper threshold being less than the fault threshold. Other examples are described.

[0007] For systems, methods, apparatus, and articles of art that protect circuits during avalanche currents, an example non-transitory computer-readable medium includes instructions that cause at least one programmable circuit to monitor a temperature sensor to determine a measured temperature indicating the temperature of a transistor. The instructions cause one or more of the at least one programmable circuit to provide a first signal to a driver in response to the measured temperature being greater than or equal to a fault threshold, the driver controlling the transistor in response to the first signal. The instructions cause one or more of the at least one programmable circuit to provide a second signal to the driver in response to the measured temperature being less than a lower threshold, the driver controlling the transistor in response to the second signal. The instructions cause one or more of the at least one programmable circuit to provide a third signal to the driver in response to the measured temperature being greater than or equal to an upper threshold, the driver controlling the transistor in response to the third signal, the upper threshold being less than a fault threshold. Other examples are described. Attached Figure Description

[0008] Figure 1 The example system is shown as a block diagram and includes an example insulation monitoring circuit (IMC) for monitoring the isolation barrier between an example voltage source and an example chassis grounding terminal.

[0009] Figure 2 for Figure 1 A schematic diagram of an example implementation of the switching circuit.

[0010] Figure 3 for Figure 2 A schematic diagram of an example implementation of a temperature-based control circuit.

[0011] Figure 4 To indicate Figure 1 and 2 Example state diagram of example operation of the switching circuit.

[0012] Figure 5 To indicate Figure 1 and 2 A diagram illustrating the operation of a switching circuit.

[0013] Figure 6 The flowchart illustrates at least one of the example machine-readable instructions or example operations, which can be implemented, instantiated, or executed by a programmable circuit system. Figure 2 and 3 Temperature-based control circuit.

[0014] Figure 7 This is a block diagram of an example processing platform containing a programmable circuit system configured to implement, instantiate, or execute. Figure 6 Example machine-readable instructions or example operations to implement Figure 2 and 3 Temperature-based control circuit.

[0015] The figures are not necessarily drawn to scale. Generally, one or more figures and the same reference numerals in this specification refer to the same or similar features or parts (at least one of which are functional or structural). Although the figures show areas with clearly defined lines and boundaries, some or all of these lines and boundaries may be idealized. In reality, boundaries or lines may be unobservable, mixed, or irregular. Detailed Implementation

[0016] In power electronics applications such as electric vehicles (EVs) and hybrid electric vehicles (HEVs), the high-voltage power supply, such as that of a high-voltage battery pack, is isolated from the vehicle's chassis to protect occupants (driver, passengers, etc.) and prevent damage to electrical components. The vehicle's electrical systems monitor the integrity of this isolation between the high-voltage power supply and the chassis to maintain vehicle safety throughout its lifespan. This type of monitoring is typically referred to as insulation resistance monitoring (also known as isolation check, insulation inspection, isolation monitoring, insulation monitoring, and residual current monitoring (RCM)).

[0017] Insulation resistance monitoring is performed by measuring the resistance between each terminal of the high-voltage power supply and the chassis. Insulation resistance monitoring is performed throughout the vehicle's lifespan to verify that isolation from the vehicle's high-voltage power supply is maintained. During insulation monitoring testing, the insulation monitoring circuit (IMC) injects a test signal into the isolation resistor (R0). ISO The IMC measures the leakage current to check the isolation resistance. Based on the test signal and leakage current, the IMC can calculate the isolation resistance and determine whether it is within an acceptable range (e.g., a range defined by standards).

[0018] Several architectures exist for IMC. Some architectures employ a microcontroller that performs measurements via at least one disconnecting switch in the high-voltage domain. Other architectures employ a microcontroller that performs measurements from the low-voltage domain. Regardless of the architecture, IMC can be used to monitor insulation resistance throughout the vehicle's lifespan.

[0019] When implemented in a vehicle, the isolation barrier of the IMC across the vehicle is coupled between (1) the vehicle's chassis and (2) at least one of the positive or negative terminals of the vehicle's high-voltage power supply. Therefore, the IMC may be subjected to high voltages in real-world applications, such as from faults or large inrush currents. Furthermore, before vehicle deployment (e.g., during vehicle manufacturing) or during vehicle maintenance, the vehicle and IMC can be tested to determine whether the isolation barrier within the vehicle and IMC can withstand high voltages (e.g., caused by faults, arcing, etc.). This test is called a high-potential (Hi-Pot) test. In some examples, the disconnecting switch implemented within the IMC can be subjected to a Hi-Pot test as a separate component.

[0020] During a Hi-Pot test, a device under test (DUT), such as a vehicle, IMC, or disconnector implemented in an IMC, is subjected to three to five times its normal operating voltage for a given duration. For example, if the normal operating voltage of an EV or HEV is 1.2 kV, a Hi-Pot test can subject the EV or HEV's isolation barrier, IMC, or disconnector to a voltage between 3 kV and 5 kV. To pass a Hi-Pot test, isolation components (e.g., the isolation barrier in an EV or HEV, the IMC, the disconnector implemented in the IMC, etc.) must withstand the applied Hi-Pot voltage for a given duration (e.g., 60 seconds) without damaging the isolation components (e.g., induced leakage current, short-circuit faults, open-circuit faults, etc.). During a Hi-Pot test, the disconnector (implemented in an IMC or as a stand-alone component) enters a breakdown operating mode, where the disconnector conducts through a current-limiting resistor (R). LIM The avalanche current is set. Due to the high power dissipation during the breakdown operation mode, the disconnect switch begins to heat up.

[0021] To increase the amount of avalanche current a disconnector can withstand, the heat dissipated by the disconnector's enclosure can be reduced. Some methods for reducing heat dissipation include (1) increasing the resistance of the current-limiting resistor and (2) adding a transient voltage suppressor (TVS) clamp in parallel with the disconnector. Increasing the resistance of the current-limiting resistor increases the heat dissipated by the current-limiting resistor compared to the disconnector itself. However, increasing the resistance of the current-limiting resistor limits the accuracy achievable during insulation resistance monitoring.

[0022] For example, the accuracy of insulation resistance monitoring can be improved when the resistance of the current-limiting resistor is close to the isolation impedance of interest. Furthermore, to mitigate heat dissipation by the disconnecting switch, the physical size of the current-limiting resistor is increased to facilitate the increased heat dissipation. However, increasing the physical size of the current-limiting resistor increases the area consumption of the method. Adding a TVS clamp in parallel with the disconnecting switch also dissipates power outside the disconnecting switch package. However, adding a TVS clamp adds an extra component, which increases the area consumption and monetary cost of the method.

[0023] Another approach is to use a junction field-effect transistor (JFET) to generate a supply current for the gate driver and controller in response to the Hi-Pot voltage. When the temperature of the isolating switch exceeds a first threshold, the controller triggers the gate driver to enable the isolating switch, thereby reducing the voltage across the isolating switch and thus reducing the amount of power dissipated by the isolating switch, which cools the isolating switch. When the temperature of the isolating switch drops below a second threshold, the controller disconnects the gate driver to disable the isolating switch, which increases the voltage across the isolating switch and thus increases the amount of power dissipated by the isolating switch. Therefore, the isolating switch heats up in response to the increased voltage. This method allows for a reduction in the physical size of the current-limiting resistor and allows the resistance of the current-limiting resistor to approach the isolation impedance of interest. Therefore, the area and cost of this method can be reduced, and the accuracy of insulation monitoring can be improved. However, this method does not support sufficient avalanche current for modern applications.

[0024] For example, the goal of modern Hi-Pot testing in vehicles could be to determine whether high leakage current (up to 3 mA) breaks through the vehicle's isolation barrier when a Hi-Pot voltage is applied. As described above, when the IMC is subjected to a Hi-Pot voltage, the disconnector within the IMC can enter a breakdown operating mode, where it conducts avalanche current and becomes hot. The amount of avalanche current the disconnector can conduct depends on the heat dissipated by the disconnector's package. Therefore, if the disconnector within the IMC becomes too hot, it cannot conduct the high leakage current that might occur during modern Hi-Pot testing. Consequently, the IMC may not be able to detect the high leakage current that might manifest in modern Hi-Pot testing.

[0025] To reduce heat dissipation by the disconnector while avoiding the drawbacks of the methods described above, the example described herein includes a JFET to generate a supply current for a temperature-based controller in response to the Hi-Pot voltage. The temperature-based controller utilizes four thresholds to manage temperature during breakdown operating modes. For example, a first upper threshold (also known as a fault threshold) sufficiently above the temperature during normal operating conditions of the disconnector is used to trigger when the disconnector enters a fault condition, such as a breakdown operating mode. After the disconnector temperature meets the first upper threshold, the disconnector enters a fault state, and the temperature-based controller triggers the gate driver to enable the disconnector to reduce the voltage across the disconnector, thereby reducing the amount of power dissipated by the disconnector and thus cooling it.

[0026] In the example described herein, when a fault state is set, the temperature-based controller utilizes a second upper threshold, a first lower threshold, and a second lower threshold (also known as a fault clearing threshold). When the temperature of the disconnector switch drops below the first lower threshold, the temperature-based controller disconnects the gate driver to disable the disconnector switch. This increases the voltage across the disconnector switch and allows the disconnector switch to conduct avalanche current, thereby increasing the amount of power dissipated by the disconnector switch. Therefore, the disconnector switch heats up in response to the increased voltage. When the temperature of the disconnector switch exceeds the second upper threshold, the temperature-based controller triggers the gate driver to enable the disconnector switch to reduce the voltage across the disconnector switch, thereby reducing the amount of power dissipated by the disconnector switch and cooling the disconnector switch.

[0027] In the example described herein, the temperature-based controller clears the fault condition when the temperature of the disconnecting switch drops below a second lower threshold. For example, when the disconnecting switch has cooled sufficiently, the temperature-based controller clears the fault condition, and the disconnecting switch can return to normal operation. When the fault condition is cleared, the temperature-based controller uses a first upper threshold to regulate the temperature of the disconnecting switch. In the example described herein, by setting the first upper threshold sufficiently higher than the temperature during the normal operating conditions of the disconnecting switch, the described system, method, apparatus, and article of manufacture avoid triggering the fault condition during normal operating conditions. Furthermore, by setting the second upper threshold below the first upper threshold, the example described herein maintains a lower average junction temperature than other methods. In this way, the apparatus implementing the example described herein can conduct more avalanche current compared to other methods.

[0028] Figure 1 This is a block diagram of an example system 100, which includes an example insulation monitoring circuit (IMC) 102 for monitoring the isolation barrier between an example voltage source 104 and an example chassis grounding terminal 106. Figure 1In the example, the isolation barrier is represented by a first example isolation resistor 108 and a second example isolation resistor 110. Furthermore, in Figure 1 In the example, IMC 102 includes a first example current-limiting resistor 112, a second example current-limiting resistor 114, and a first example switching circuit 116. A Second example switch circuit 116 B Example controller circuit 118, example sensing resistor 120, and example supply terminal 122.

[0029] exist Figure 1 In this example, system 100 is a vehicle, such as an EV or HEV. As described above, isolation resistors 108 and 110 represent isolation barriers between voltage source 104 and chassis ground terminal 106. For example, voltage source 104 is the vehicle's backup battery, and chassis ground terminal 106 is the vehicle's chassis. Figure 1 In this example, IMC 102 monitors the isolation barrier within the vehicle to maintain isolation between voltage source 104 and chassis ground terminal 106. In additional or alternative examples, system 100 can be any other type of system. For example, system 100 could be a powertrain system, battery management system, energy storage system, solar on-board charger, or electric vehicle charging system.

[0030] exist Figure 1 In the example, the vehicle represented by system 100 can undergo a Hi-Pot test to determine whether the isolation barrier is maintained even during high-voltage conditions. During the Hi-Pot test, switching circuit 116... A Or switch circuit 116 B At least one of them is subjected to a voltage much higher than during normal operating conditions and enters a breakdown operating mode, during which the switching circuit 116 A Or switch circuit 116 B At least one of them conducts the avalanche current. In some examples, the IMC 102 may undergo Hi-Pot testing before being implemented in the vehicle. In such examples, isolation resistors 108 and 110 are omitted, and voltage source 104 represents a Hi-Pot voltage source for performing Hi-Pot testing (e.g., at a test platform).

[0031] Alternatively or concurrently, the switching circuit 116 A Or switch circuit 116 B At least one of them can undergo Hi-Pot testing as a standalone component. In such examples, most components of system 100 are omitted, and voltage source 104 spans switching circuit 116. A Or switch circuit 116 BCoupled, and indicating a Hi-Pot voltage source used for Hi-Pot testing (e.g., at a test platform). For example, switching circuit 116. A Or switch circuit 116 B A test board containing a current-limiting resistor (e.g., one of current-limiting resistor 112 or current-limiting resistor 114) and a Hi-Pot voltage source (e.g., voltage source 104) is added.

[0032] exist Figure 1 In the example, IMC 102 has a first terminal, a second terminal, a third terminal, and a fourth terminal. Figure 1 In the example, each of the voltage source 104, isolation resistor 108, isolation resistor 110, current-limiting resistor 112, current-limiting resistor 114, and sensing resistor 120 has a first terminal and a second terminal. Additionally, the switching circuit 116... A and switching circuit 116 B Each of them has a control terminal, a first supply terminal, a second supply terminal, a first terminal, and a second terminal. Figure 1 In the example, the controller circuit 118 has a first supply terminal, a second supply terminal, an input, a first output, and a second output.

[0033] exist Figure 1 In the example, the first terminal of voltage source 104 is coupled to the first terminal of isolation resistor 108 and the first terminal of current-limiting resistor 112. For example, the first terminal of current-limiting resistor 112 will operate as the first terminal of IMC 102. Figure 1 In this example, the second terminal of voltage source 104 is coupled to the second terminal of isolation resistor 110 and the second terminal of current-limiting resistor 114. For example, the second terminal of current-limiting resistor 114 will operate as the second terminal of IMC 102.

[0034] exist Figure 1 In the example, voltage source 104 provides a voltage displayed as V. HV The output voltage, such as the battery voltage of a vehicle. In additional or alternative examples, voltage source 104 is a Hi-Pot voltage source for testing IMC 102. As described above, isolation resistors 108 and 110 are omitted in such examples. In some examples, voltage source 104 is used to test switching circuit 116. A Or switch circuit 116 B At least one of the Hi-Pot voltage sources in the system. As described above, in such examples, most of the components of system 100 are omitted except for the current-limiting resistor and the voltage source.

[0035] exist Figure 1In the example, chassis ground terminal 106 is coupled to the second terminal of isolation resistor 108, the first terminal of isolation resistor 110, and switch circuit 116. A Second supply terminal, switching circuit 116 B The second supply terminal, the second supply terminal of the controller circuit 118, and the second terminal of the sensing resistor 120. For example, the switching circuit 116 A Second supply terminal, switching circuit 116 B The second supply terminal of the controller circuit 118 and the second supply terminal of the controller circuit 118 will operate as the third terminal of the IMC 102. In addition, for example, the second terminal of the sensing resistor 120 will operate as the fourth terminal of the IMC 102.

[0036] exist Figure 1 In the example, chassis grounding terminal 106 is the electrical ground that connects the electrical system of the device or vehicle to the metal frame or chassis of the device or vehicle. Figure 1 In the example, chassis grounding terminal 106 serves as a common grounding point in system 100. This simplifies wiring in system 100 (e.g., a vehicle). In additional or alternative examples, chassis grounding terminal 106 may be implemented using any other type of grounding terminal.

[0037] exist Figure 1 In the example, the first terminal of the isolation resistor 108 is coupled to the first terminal of the voltage source 104 and the first terminal of the current-limiting resistor 112. Furthermore, the second terminal of the isolation resistor 108 is coupled to the chassis ground terminal 106. Figure 1 Example isolation resistor 108 has R ISO1 The resistor represents the isolation between the first terminal (also called the positive terminal) of the voltage source 104 and the chassis ground terminal 106. For example, the resistance (R) of the isolation resistor 108... ISO1 It is approximately kiloohms (kΩ) or megaohms (MΩ) (for example, between 350 kΩ and 30 MΩ).

[0038] exist Figure 1 In the example, the first terminal of the isolation resistor 110 is coupled to the chassis ground terminal 106. Furthermore, the second terminal of the isolation resistor 110 is coupled to the second terminal of the voltage source 104 and the second terminal of the current-limiting resistor 114. Figure 1 Example isolation resistor 110 has R ISO2 The resistor represents the isolation between the second terminal (also called the negative terminal) of the voltage source 104 and the chassis ground terminal 106. For example, the resistance (R) of the isolation resistor 110... ISO2 It is approximately kΩ or MΩ (for example, between 350 kΩ and 30 MΩ).

[0039] exist Figure 1 In this example, the first terminal of the current-limiting resistor 112 is coupled to the first terminal of the voltage source 104 and the first terminal of the isolation resistor 108. Furthermore, the second terminal of the current-limiting resistor 112 is coupled to the switching circuit 116. A The first terminal. Figure 1 Example current-limiting resistor 112 has R LIM1 The resistance, which is the same as the resistance (R) of the isolation resistor 108. ISO1 They are roughly the same. Figure 1 In the example, the first terminal of the current-limiting resistor 114 is coupled to the switching circuit 116. B The second terminal of the current-limiting resistor 114 is coupled to the second terminal of the voltage source 104 and the second terminal of the isolation resistor 110. Figure 1 Example current-limiting resistor 114 has R LIM2 The resistance of the isolating resistor 110 (R) ISO2 They are roughly the same.

[0040] exist Figure 1 In the example, switch circuit 116 A The control terminal is coupled to the first output of the controller circuit 118. Figure 1 In the example, switch circuit 116 A The first supply terminal is coupled to supply terminal 122, and the switching circuit 116 A The second supply terminal is coupled to the chassis grounding terminal 106. Furthermore, in Figure 1 In the example, switch circuit 116 A The first terminal is coupled to the second terminal of the current-limiting resistor 112, and the switching circuit 116 A The second terminal is coupled to the switching circuit 116 B The first terminal, the input of the controller circuit 118, and the first terminal of the sensing resistor 120. Figure 1 In the example, switch circuit 116 A It is an isolated solid-state relay designed for high-voltage automotive and industrial applications.

[0041] exist Figure 1 In the example, switch circuit 116 B The control terminal is coupled to the second output of the controller circuit 118. Figure 1 In the example, switch circuit 116 B The first supply terminal is coupled to supply terminal 122, and the switching circuit 116 B The second supply terminal is coupled to the chassis grounding terminal 106. Furthermore, in Figure 1 In the example, switch circuit 116 BThe first terminal is coupled to the switching circuit 116 A The second terminal, the input of the controller circuit 118, and the first terminal of the sensing resistor 120, and the switching circuit 116 B The second terminal is coupled to the first terminal of the current-limiting resistor 114. Figure 1 In the example, switch circuit 116 B It is an isolated solid-state relay designed for high-voltage automotive and industrial applications.

[0042] exist Figure 1 In the example, switch circuit 116 A and switching circuit 116 B Each of them contains a component coupled in the switching circuit 116 A and switch circuit 116 B One or more transistors between the corresponding first and second terminals. Switching circuit 116 A and switching circuit 116 B One or more transistors can be implemented as one or more metal-oxide-semiconductor field-effect transistors (MOSFETs), one or more bipolar junction transistors (BJTs), one or more JFETs, one or more insulated-gate bipolar transistors (IGBTs), or other types of transistors. Figure 1 In the example, switch circuit 116 A and switching circuit 116 B Each of the components includes a back-to-back power MOSFET, wherein the respective power MOSFET includes a body diode coupled between the source and drain terminals of the respective power MOSFET. When a reverse bias voltage is applied between the drain and source terminals of the MOSFET, an electric field is established across the positive-negative (PN) junction of the body diode of the MOSFET.

[0043] When the applied voltage increases beyond the breakdown voltage, a critical field is reached, where the PN junction can no longer support the applied voltage. The increased voltage leads to avalanche breakdown, where reverse current flows through the body diode. For example, in response to the application of a Hi-Pot voltage V across the first and second terminals of the IMC102... HV Avalanche breakdown can cross the switching circuit 116 A Or switch circuit 116 B One or more power MOSFETs and one or more body diodes of at least one of the components are generated to provide power through the switching circuit 116. A Or switch circuit 116 B At least one of them has avalanche current flow.

[0044] As used herein, the term avalanche condition refers to the electrical breakdown of the insulating region of a switch (e.g., the PN junction of a semiconductor power device) in response to an applied electric field. For example, in switching circuit 116... A Or switch circuit 116 B When at least one of them is disabled (e.g., not conducting) (e.g., during a Hi-Pot test), applying a sufficiently high voltage or current to the first and second terminals of IMC 102 can cross the switching circuit 116. A Or switch circuit 116 B The insulating regions of at least one or more power MOSFETs in the circuit generate an electric field sufficient to trigger electrical breakdown. Therefore, avalanche current can flow through the switching circuit 116 in response to electrical breakdown. A Or switch circuit 116 B At least one of them.

[0045] exist Figure 1 In this example, the first supply terminal of the controller circuit 118 is coupled to the supply terminal 122, and the second supply terminal of the controller circuit 118 is coupled to the chassis ground terminal 106. Furthermore, the input of the controller circuit 118 is coupled to the switching circuit 116. A Second terminal, switch circuit 116 B The first terminal of the sensing resistor 120 and the first terminal of the sensing resistor 120. Figure 1 In the example, the first output of controller circuit 118 is coupled to switch circuit 116. A The control terminal, and the second output of the controller circuit 118 is coupled to the switch circuit 116. B The control terminals. Figure 1 In the example, controller circuit 118 is a microcontroller unit (MCU). Therefore, for example, the input of controller circuit 118 is the analog-to-digital converter (ADC) input of controller circuit 118, the first output of controller circuit 118 is the first general purpose input / output (GPIO) of controller circuit 118, and the second output of controller circuit 118 is the second GPIO of controller circuit 118.

[0046] exist Figure 1 In the example, controller circuit 118 implements an "on" control loop to regulate switch circuit 116. A and switching circuit 116 B The operation. For example, controller circuit 118 implements an "on" control loop during insulation monitoring. For example, controller circuit 118 provides a control signal as a pulse with a duty cycle. The duty cycle of the control signal can be fixed or can vary over time. Figure 1In this example, the duty cycle can be set to inject a test signal into isolation resistors 108 and 110. Therefore, controller circuit 118 can measure the leakage current through isolation resistors 108 and 110 via sensing resistor 120.

[0047] exist Figure 1 In the example, the first terminal of the sensing resistor 120 is coupled to the switching circuit 116. A Second terminal, switch circuit 116 B The first terminal of the sensing resistor 120 is coupled to the input of the controller circuit 118, and the second terminal of the sensing resistor 120 is coupled to the chassis ground terminal 106. Figure 1 In the example, the sensing resistor 120 has R SENSE The resistance of the sensing resistor 120 is chosen by the designer of the IMC 102 to bring the voltage or current representing the sensed leakage current to the operating range of the controller circuit 118. Figure 1 In the example, supply terminal 122 is coupled to switch circuit 116. A First supply terminal, switching circuit 116 B The first supply terminal of the controller circuit 118 and the first supply terminal of the controller circuit 118. For example, supply terminal 122 will supply voltage (V). DD ) Provided to the switching circuit 116 A Switching circuit 116 B and controller circuit 118.

[0048] As described above, during the Hi-Pot test, switching circuit 116 A Or switch circuit 116 B At least one of them can withstand a high-stress voltage, which can be applied to the switching circuit 116. A Or switch circuit 116 B Avalanche currents are induced in at least one or more power MOSFETs. Such high-stress voltages tend to increase the power dissipation of the power MOSFETs, which may also increase the temperature of the die on or in which the power MOSFETs are implemented. For example, an increase in die temperature can damage the package of the IC on which the die is implemented, such as causing delamination. Advantageously, switching circuit 116 A and switching circuit 116 B Each of them contains a temperature-based controller that uses four thresholds to manage the temperature during the Hi-Pot test.

[0049] For example, a temperature-based controller utilizes a circuit that is sufficiently higher than the switching circuit 116. A and switching circuit 116 BThe first upper limit threshold of temperature during normal operating conditions (also known as the fault threshold) is set in the switching circuit 116. A Or switch circuit 116 B Triggered when entering a fault condition such as a breakdown operation mode. In switch circuit 116 A Or switch circuit 116 B After the temperature meets the first upper limit threshold, the switching circuit 116 A Or switch circuit 116 B The system enters a fault state, and the temperature-based controller triggers the gate driver to enable the switching circuit 116. A Or switch circuit 116 B To reduce the switching circuit 116 A Or switch circuit 116 B The voltage across the two ends. Therefore, the switching circuit 116... A Or switch circuit 116 B The reduced power dissipation cools the switching circuit 116. A Or switch circuit 116 B .

[0050] exist Figure 1 In the example, when a fault state is set, the temperature-based controller utilizes a second upper threshold, a first lower threshold, and a second lower threshold (also known as a fault clearing threshold). When switching circuit 116... A Or switch circuit 116 B When the temperature drops below a first lower threshold, the temperature-based controller disconnects the gate driver to disable the switching circuit 116. A Or switch circuit 116 B This adds a switching circuit 116 A Or switch circuit 116 B The voltage at both ends and allow switching circuit 116 A Or switch circuit 116 B Conducting avalanche current. Therefore, switching circuit 116 A Or switch circuit 116 B The increased power dissipation raises the requirements of the switching circuit 116. A Or switch circuit 116 B The temperature.

[0051] exist Figure 1 In the example, when switching circuit 116 A Or switch circuit 116 B When the temperature exceeds the second upper limit threshold, the temperature-based controller triggers the gate driver to enable the switching circuit 116. A Or switch circuit 116 B To reduce the switching circuit 116A Or switch circuit 116 B The voltage across the two ends. Therefore, the switching circuit 116... A Or switch circuit 116 B The reduced power dissipation cools the switching circuit 116. A Or switch circuit 116 B .exist Figure 1 In the example, when switching circuit 116 A Or switch circuit 116 B When the temperature drops below the second lower threshold, the temperature-based controller clears the fault state. For example, when the switching circuit 116... A Or switch circuit 116 B Once fully cooled, the temperature-based controller clears the fault state, and the switching circuit 116... A Or switch circuit 116 B Normal operation can be resumed. When the fault condition is cleared, the temperature-based controller uses a first upper threshold to adjust the switching circuit 116. A Or switch circuit 116 B The temperature.

[0052] Figure 2 for Figure 1 Switching circuit 116 A A schematic diagram of an example implementation scheme. Figure 2 In the example, switch circuit 116 B With switch circuit 116 A Implement similarly. Example switching circuit 116 A It includes an example low-voltage domain 202 and an example high-voltage domain 204 separated by an example isolation barrier 206. Figure 2 In the example, the low voltage domain 202 includes a first example driver 208, and the high voltage domain 204 includes a second example driver 210 to drive a first example transistor 212 having a first example body diode 214 and a second example transistor 216 having a second example body diode 218.

[0053] exist Figure 2 In the example, the high-voltage domain 204 also includes an exemplary temperature-based control circuit 220, which is powered via a third example transistor 222 and controls transistors 212 and 216 via a driver 210 in response to an example temperature sensor 224. Figure 2 In the example, switch circuit 116 A An IC is implemented as comprising two substrates. For example, a low-voltage domain 202 is implemented on a first substrate, and a high-voltage domain 204 is implemented on a second substrate, wherein the first and second substrates are implemented within an IC package material. Figure 2In the example, driver 208 is implemented on a first substrate, and driver 210, transistor 212, body diode 214, transistor 216, body diode 218, temperature-based control circuitry 220, transistor 222, and temperature sensor 224 are implemented on a second common substrate (also known as a die).

[0054] exist Figure 2 In the example, the isolation barrier 206 has a first terminal, a second terminal, a third terminal, and a fourth terminal. Figure 2 In the example, each of driver 208 and driver 210 has a first supply terminal, a second supply terminal, an input, and an output. Furthermore, Figure 2 Each of the example transistors 212, 216, and 222 has a control terminal (gate), a first terminal (drain), and a second terminal (source), and Figure 2 Each of the example body diodes 214 and 218 has an effective or inherent first terminal (cathode) and an effective or inherent second terminal (anode). Figure 2 In the example, the temperature-based control circuit 220 has a supply terminal, an input, and an output, and the temperature sensor 224 has an output.

[0055] exist Figure 2 In the example, the circuit system in low voltage domain 202 operates at low voltages (e.g., between 1.8 volts (V) and 15 V) and interfaces with a control logic circuit system or a microcontroller (e.g., controller circuit 118). Furthermore, in Figure 2 In the example, the circuitry of high-voltage domain 204 drives power devices, such as transistors 212 and 216, that operate at high voltages (e.g., between 48 V and greater than 600 V). Figure 2 In the example, isolation barrier 206 is implemented using a component such as an optocoupler, transformer, capacitor, or digital isolator. For example, isolation barrier 206 prevents direct electrical connection between low-voltage domain 202 and high-voltage domain 204. Figure 2 The isolation barrier 206 transmits signals via an insulating medium (e.g., an optical medium, a magnetic medium, or a capacitive medium) that provides signal integrity while protecting low-voltage circuitry from high-voltage surges or faults.

[0056] exist Figure 2 In the example, the first terminal of isolation barrier 206 is interfaced with the third terminal of isolation barrier 206, and the second terminal of isolation barrier 206 is interfaced with the fourth terminal of isolation barrier 206. Figure 2In the example, the first terminal of isolation barrier 206 is coupled to the output of driver 208, and the second terminal of isolation barrier 206 is coupled to chassis ground terminal 106. Furthermore, in Figure 2 In the example, the third terminal of isolation barrier 206 is coupled to the input of driver 210, and the fourth terminal of isolation barrier 206 is coupled to the second supply terminal of driver 210. The fourth terminal of isolation barrier 206 is also coupled to the second terminal of transistor 212, the second terminal of body diode 214, the second terminal of transistor 216, the second terminal of body diode 218, and the control terminal of transistor 222.

[0057] exist Figure 2 In this example, the first supply terminal of driver 208 is coupled to supply terminal 122, and the second supply terminal of driver 208 is coupled to chassis ground terminal 106. For example, the first supply terminal of driver 208 will serve as a switch circuit 116. A The first supply terminal operates, and the second supply terminal of the driver 208 will act as a switch circuit 116. A The second supply terminal is operated. Figure 2 In this example, the input of driver 208 is coupled to the first output of controller circuit 118, and the output of driver 208 is coupled to the first terminal of isolation barrier 206. For example, the input of driver 208 will serve as a switch circuit 116. A The control terminal is operated. Figure 2 In the example, a transistor is used to implement driver 208, which boosts, shapes, or regulates control signals from control circuitry 118 to provide control signals that meet the timing and voltage requirements of isolation barrier 206. For example, driver 208 drives isolation barrier 206 to reliably transmit signals with sufficient integrity.

[0058] exist Figure 2 In the example, the first supply terminal of driver 210 is coupled to the second terminal of transistor 222, and the second supply terminal of driver 210 is coupled to the fourth terminal of isolation barrier 206. For example, the second supply terminal of driver 210 is coupled to chassis ground terminal 106 via isolation barrier 206. Figure 2 In the example, the input of driver 210 is coupled to the third terminal of isolation barrier 206. For example, the input of driver 210 is coupled to the output of driver 208 via isolation barrier 206. Furthermore, in Figure 2 In the example, the output of driver 210 is coupled to the control terminals of transistor 212 and transistor 216. Figure 2In the example, driver 210 is implemented by a gate driver that uses transistors to amplify or switch control signals provided by driver 208 or temperature-based control circuitry 220 to operate power devices (e.g., transistors 212 and 216). For example, driver 210 is designed to match the electrical requirements of transistors 212 and 216 and to provide sufficient current and voltage while protecting the control circuitry system, for example, the temperature-based control circuitry 220, from damage.

[0059] As described above, the first supply terminal of driver 210 is coupled to the second terminal of transistor 222. Figure 2 In the example, the control terminal of transistor 222 is coupled to the fourth terminal of isolation barrier 206. For example, the control terminal of driver 210 is coupled to chassis ground terminal 106 via isolation barrier 206. Figure 2 In the example, the first terminal of transistor 222 is coupled to the second terminal of current-limiting resistor 112 and the first terminal of transistor 212. Furthermore, the second terminal of transistor 222 is coupled to the first supply terminal of driver 210 and the supply terminal of temperature-based control circuitry 220.

[0060] exist Figure 2 In the example, transistor 222 is a negative-channel (N-channel) JFET that supplies an input voltage to operate temperature-based control circuitry 220 and driver 210, for example, in response to a voltage potential applied across the first and second terminals of IMC 102. For instance, when the gate of the N-channel JFET is grounded, the N-channel JFET provides a low-voltage supply (e.g., in pinch-off operation) at its source (e.g., to operate in a pinch-off manner) to operate driver 210 and temperature-based control circuitry 220. When the drain of the N-channel JFET is low, the N-channel JFET behaves like a switch (e.g., operating in the transistor region) to disconnect driver 210 and temperature-based control circuitry 220.

[0061] exist Figure 2 In this example, the control terminal of transistor 212 is coupled to the output of driver 210, and the first terminal of transistor 212 is coupled to the second terminal of current-limiting resistor 112, the first terminal of body diode 214, and the first terminal of transistor 222. For example, the first terminal of transistor 212 will serve as a switch circuit 116. A The first terminal operation. Figure 2 In the example, the second terminal of transistor 212 is coupled to the fourth terminal of isolation barrier 206, the second terminal of body diode 214, the second terminal of transistor 216, and the second terminal of body diode 218. Furthermore, in Figure 2In the example, transistor 212 is implemented by an N-channel power field-effect transistor (FET).

[0062] exist Figure 2 In the example, the control terminal of transistor 216 is coupled to the output of driver 210, and the first terminal of transistor 216 is coupled to switching circuit 116. B The first terminal of transistor 216 and the first terminal of body diode 218. For example, the first terminal of transistor 216 will serve as a switch circuit 116. A The second terminal operation. Figure 2 In the example, the second terminal of transistor 216 is coupled to the fourth terminal of isolation barrier 206, the second terminal of transistor 212, the second terminal of body diode 214, and the second terminal of body diode 218. Figure 2 In the example, transistor 216 is implemented by an N-channel power FET.

[0063] exist Figure 2 In the example, transistors 212 and 216 are coupled in series in the switching circuit 116 A Between the first terminal and the second terminal. Specifically, transistors 212 and 216 are shown in a common-source configuration, wherein the sources of each of transistors 212 and 216 are coupled together. The common-source configuration can be used to provide bidirectional voltage blocking. Figure 2 In the example, the drains of transistors 212 and 216 are coupled to the second terminal of current-limiting resistor 112 and switching circuit 116, respectively. B The first terminal.

[0064] As described above, transistors 212 and 216 respectively include body diodes 214 and 218. Figure 2 In the example, the first terminal of the body diode 214 is coupled to the first terminal of the transistor 212, and the second terminal of the body diode 214 is coupled to the second terminal of the transistor 212. Furthermore, in Figure 2 In the example, the first terminal of the body diode 218 is coupled to the first terminal of the transistor 216, and the second terminal of the body diode 218 is coupled to the second terminal of the transistor 216. Figure 2 In the example, body diodes 214 and 218 have semiconductor junctions to block reverse current flow from the drain to the source of transistors 212 and 216, respectively.

[0065] exist Figure 2 In the example, the supply terminal of the temperature-based control circuit 220 is coupled to the second terminal of the transistor 222, the input of the temperature-based control circuit 220 is coupled to the output of the temperature sensor 224, and the output of the temperature-based control circuit 220 is coupled to the input of the driver 210. Figure 2 In the example, the temperature-based control circuit 220 is implemented by at least one or more amplifiers, one or more voltage sources, one or more switches, one or more logic gates, and one or more flip-flops. As described herein, the temperature-based control circuit 220 controls the temperature of at least one of transistors 212 or 216 to prevent damage, while allowing avalanche current during Hi-Pot testing.

[0066] As described above, the IMC 102 can withstand Hi-Pot testing. For example, voltage source 104 provides an output voltage across the first and second terminals of the IMC 102, shown as V. HV During the Hi-Pot test, transistors 212 and 216 are disabled (e.g., not turned on). Therefore, at least one of transistors 212 or 216 can be switched on during the Hi-Pot test in circuit 116. A When the voltage across the terminals is at the breakdown level (e.g., 1.4 kV), breakdown occurs and avalanche current is conducted. For example, this occurs in response to the positive voltage V across the first and second terminals of the IMC 102. HV Avalanche breakdown can occur across the PN junction of the body diode 214 of transistor 212 to provide avalanche current flow through the channel of transistor 212. This is in response to the positive voltage V across the first and second terminals of IMC102. HV The body diode 218 is forward biased to conduct current through transistor 216. Power is dissipated in response to avalanche conditions, which causes the temperature of transistor 212 to increase. For example, Equation 1 illustrates the current passing through current-limiting resistor 112 and switching circuit 116. A Switching circuit 116 B And the avalanche current of current-limiting resistor 114, and Equation 2 shows that during an avalanche event, the switching circuit 116... A Dissipated power.

[0067]

[0068] In response to the negative voltage V across the first and second terminals of the IMC 102 HV Avalanche breakdown can occur across the PN junction of the body diode 218 of transistor 216 to provide avalanche current flow through the channel of transistor 216. This is in response to the negative voltage V across the first and second terminals of IMC102. HV The body diode 214 is forward biased to conduct current through transistor 212. Power is dissipated in response to avalanche conditions, which causes an increase in the temperature of transistor 216. Figure 2In the example, temperature-based control circuit 220 adjusts the temperature of at least one of transistors 212 or 216 in response to a sensed temperature monitored by temperature sensor 224.

[0069] exist Figure 2 In the example, temperature sensor 224 is coupled to transistors 212 and 216. For example, Figure 2 The coupling schematically shown includes conductive coupling, such as at least one of a conductive connection or a thermally conductive connection. Furthermore, the output of the temperature sensor 224 is coupled to the input of a temperature-based control circuit 220. Figure 2 In the example, temperature sensor 224 is a thermal sensor, such as a BJT, arranged physically adjacent to transistors 212 and 216. For example, temperature sensor 224 provides a sensor signal to temperature-based control circuitry 220, wherein the sensor signal indicates the temperature of at least one of transistors 212 or 216. For example, the temperature corresponds to the junction temperature of at least one of transistors 212 or 216.

[0070] exist Figure 2 In the example, temperature sensor 224 provides indirect measurement of the temperature of at least one of transistor 212 or transistor 216. Figure 2 In the example, temperature sensor 224 is positioned near transistors 212 and 216 and measures the junction temperature of the die on which at least one of transistors 212 or 216 is implemented. Figure 2 In some examples, indirect measurement can be used as a proxy for monitoring the junction temperature of at least one of transistors 212 or 216, provided that the temperature-based control circuitry 220 is configured to correlate the measured temperature with the junction temperature of at least one of transistors 212 or 216. For example, as described herein, the temperature-based control circuitry 220 correlates the measured temperature with the junction temperature of at least one of transistors 212 or 216 based on one or more temperature thresholds maintained by the temperature-based control circuitry 220. In some examples, the temperature sensor 224 provides a direct measurement of the temperature of at least one of transistors 212 or 216.

[0071] exist Figure 2 In one example, temperature sensor 224 provides a sensor signal as a voltage or current indicating the temperature of at least one of transistors 212 or 216. In some examples, temperature sensor 224 monitors the electrical characteristics (e.g., voltage, current, or power) of transistors 212 and 216 and provides a sensor signal in response to the measured electrical characteristics. For example, temperature sensor 224 monitors a voltage or current indicating a measured temperature and provides the monitored voltage or current to temperature-based control circuitry 220.

[0072] In response to a sensor signal from temperature sensor 224, temperature-based control circuitry 220 can detect avalanche conditions, such as breakdown operating modes, in at least one of transistors 212 or 216. For example, avalanche conditions may manifest in at least one of transistors 212 or 216 during a Hi-Pot test. As described above, avalanche conditions increase the power dissipation of at least one of transistors 212 or 216, which also increases the temperature of the die on or in which transistors 212 and 216 are implemented. This increase in die temperature can damage ICs (e.g., switching circuitry 116) in which the die is implemented. A The packaging of ) results in layering, leading to switching circuit 116 A A faulty short circuit may cause the switching circuit 116 to malfunction. A The fault disconnected.

[0073] Advantageously, the temperature-based control circuit 220 utilizes four threshold values ​​to manage the temperature of at least one of transistors 212 or 216. Figure 2 In the example, temperature-based control circuitry 220 utilizes a fault threshold that is sufficiently higher than the temperatures of transistors 212 and 216 during normal operating conditions to trigger when at least one of transistors 212 or 216 is experiencing a fault condition (e.g., a breakdown operating mode or a thermal fault). For example, the normal operating temperatures of transistors 212 and 216 range from -40 degrees Celsius (°C) to 150°C, and the fault threshold is set to 170°C.

[0074] In response to at least one of transistors 212 or 216 having a temperature that meets (e.g., is greater than or equal to) a fault threshold, temperature-based control circuitry 220 sets a fault state to indicate that at least one of transistors 212 or 216 is in a breakdown operation mode. For example, in response to at least one of transistors 212 or 216 having a temperature that meets a fault threshold, temperature-based control circuitry 220 provides a first signal to driver 210. In response to the first signal, driver 210 enables transistors 212 and 216. In the example described herein, when the control voltage of the transistors (e.g., the gate-to-source voltage of an N-channel transistor (V...)...) is... GS The transistor is enabled when it is at a level that causes the transistor to conduct current. For example, the transistor is enabled when it is in linear operating mode or saturation operating mode.

[0075] exist Figure 2In the example, the temperature-based control circuit 220 reduces the switching circuit 116 by signaling to the driver 210 to activate transistors 212 and 216 when the monitored temperature provided by temperature sensor 224 meets the fault threshold. A The voltage across the two ends. For example, the temperature-based control circuit 220 switches the circuit 116. A The voltage across the terminals decreases from the breakdown level (e.g., 1.4 kV) to the supply level (e.g., 5 V) of the driver 210 and the temperature-based control circuit 220. Therefore, the amount of power dissipated by at least one of transistors 212 or 216 is reduced, which cools at least one of transistors 212 or 216, or more generally, cools the switching circuit 116. A .

[0076] exist Figure 2 In the example, when a fault state is set, the temperature-based control circuit 220 uses an upper threshold, a lower threshold, and a fault clearing threshold to regulate the temperature of at least one of transistors 212 or 216. For example, the upper threshold is 150°C, the lower threshold is 115°C, and the fault clearing threshold is 100°C. Figure 2 In the example, in response to the temperature of at least one of transistors 212 or 216 not meeting (e.g., less than or equal to) a lower threshold, the temperature-based control circuit 220 disconnects driver 210 to disable transistors 212 and 216. For example, in response to the temperature of at least one of transistors 212 or 216 not meeting the lower threshold, the temperature-based control circuit 220 provides a second signal to driver 210. In response to the second signal, driver 210 disables transistors 212 and 216.

[0077] In the examples described herein, when the control voltage of the transistor (e.g., the gate-to-source voltage of an N-channel transistor (V) GS The transistor is disabled when it is at a level that does not cause it to conduct current. For example, the transistor is disabled when it is in cutoff operating mode. Figure 2 In the example, the temperature-based control circuit 220 adds a switching circuit 116 by signaling to the driver 210 to disable transistors 212 and 216 when the monitored temperature provided by temperature sensor 224 does not meet the lower threshold. A The voltage across the two ends. For example, the temperature-based control circuit 220 switches the circuit 116. AThe voltage across the terminals increases from the supply level (e.g., 5 V) of the driver 210 and the temperature-based control circuit 220 to the breakdown level (e.g., 1.4 kV). Consequently, at least one of transistors 212 or 216 enters a breakdown operating mode and conducts avalanche current. Therefore, the amount of power dissipated by at least one of transistors 212 or 216 increases, which raises the temperature of at least one of transistors 212 or 216, or more generally, raises the temperature of the switching circuit 116. A The temperature.

[0078] exist Figure 2 In the example, in response to at least one of transistors 212 or 216 having a temperature that meets (e.g., greater than or equal to) an upper threshold, temperature-based control circuitry 220 triggers driver 210 to enable transistors 212 and 216. For example, temperature-based control circuitry 220 provides a third signal to driver 210. In response to the third signal, driver 210 enables transistors 212 and 216. Figure 2 In the example, the temperature-based control circuit 220 reduces the switching circuit 116 by signaling to the driver 210 to enable transistors 212 and 216 when the monitored temperature provided by the temperature sensor 224 meets the upper limit threshold. A The voltage across the two ends. For example, the temperature-based control circuit 220 switches the circuit 116. A The voltage across the terminals decreases from the breakdown level (e.g., 1.4 kV) to the supply level (e.g., 5 V) of the driver 210 and the temperature-based control circuit 220. Therefore, the amount of power dissipated by at least one of transistors 212 or 216 is reduced, which cools at least one of transistors 212 or 216, or more generally, cools the switching circuit 116. A .

[0079] exist Figure 2 In one example, temperature-based control circuitry 220 clears a fault state in response to the temperature of at least one of transistors 212 or 216 not meeting (e.g., less than or equal to) a fault clearing threshold. For example, temperature-based control circuitry 220 clears a fault state in response to the temperature of at least one of transistors 212 or 216 not meeting a fault clearing threshold. When a fault state does not exist, temperature-based control circuitry 220 uses the fault threshold to regulate the temperature of at least one of transistors 212 or 216. For example, a fault state prevents temperature-based control circuitry 220 from providing a signal to driver 210 unless the measured temperature is greater than or equal to the fault threshold. In some examples, one or more of the fault threshold, upper threshold, lower threshold, or fault clearing threshold are tunable, programmable, or otherwise adjustable thresholds.

[0080] As described above, temperature-based control circuitry 220 regulates the temperature of at least one of transistors 212 or 216 to prevent damage while allowing avalanche current, for example, during Hi-Pot testing. For instance, by setting a fault threshold (e.g., 170°C) sufficiently higher than the temperature during normal operating conditions (e.g., 150°C) of transistors 212 and 216, temperature-based control circuitry 220 prevents damage to switching circuitry 116. A The fault state is triggered during normal operating conditions. Furthermore, by setting an upper threshold (e.g., 150°C) below a fault threshold (e.g., 170°C), the temperature-based control circuit 220 maintains a lower average junction temperature than other methods. For example, the temperature-based control circuit 220 maintains an average temperature of 132.5°C at the junction of at least one of transistors 212 or 216, while other methods maintain an average junction temperature of 152.5°C. In this way, compared to other methods, the switching circuit 116... A It can conduct more avalanche current.

[0081] Furthermore, at least because of the switching circuit 116 A The temperature is effectively managed by the temperature-based control circuit 220, thus reducing the physical size of the current-limiting resistors 112 and 114. Compared to other methods, this reduces the size of the switching circuit 116. A The area consumption and monetary cost. Furthermore, at least because of the switching circuit 116 A The temperature is effectively managed by the temperature-based control circuit 220, so the current-limiting resistors 112 and 114 can be tightly matched with the isolation resistors 108 and 110, respectively. This improves the insulation resistance monitoring performed by the IMC 102. The temperature-based control circuit 220 also improves the settling time of the IMC 102. Settling time, for example, refers to the period after the device (e.g., an EV or HEV) is powered on or after a significant change (e.g., a large load) occurs in the device, and before the IMC stabilizes and provides accurate insulation resistance monitoring.

[0082] exist Figure 2In the example, transistors 212 and 216 are N-channel MOSFETs. Alternatively, transistors 212 and 216 can be N-channel FETs, N-channel IGBTs, N-channel JFETs, negative-positive-negative (NPN) BJTs, or slightly modified P-channel equivalent devices. Transistors 212 and 216 can be depletion-mode devices, drain-extended devices, enhancement-mode devices, natural transistors, or other types of device structure transistors. Furthermore, transistors 212 and 216 can be implemented in or on a silicon (Si) substrate, a silicon carbide (SiC) substrate, a gallium nitride (GaN) substrate, or a gallium arsenide (GaAs) substrate.

[0083] Figure 3 for Figure 2 A schematic diagram of an example implementation of a temperature-based control circuit 220. Figure 3 In the example, the temperature-based control circuit 220 includes a first example amplifier 302, an example fault threshold terminal 304, a first example switch 306, an example trigger 308, an example logic high-side sub-sub 310, a second example switch 312, an example lower threshold terminal 314, and an example upper threshold terminal 316. Figure 2 The exemplary temperature-based control circuit 220 also includes a second example amplifier 318, an example clear fault threshold terminal 320, an example OR gate 322, and an example power-on reset circuit system 324.

[0084] exist Figure 3 In the example, each of amplifiers 302 and 318 has a supply terminal, a first input, a second input, and an output. Figure 3 The example amplifier 318 also features an enable terminal. Figure 3 In the example, each of switch 306 and switch 312 has a control terminal, a first terminal, a second terminal, and a third terminal. Furthermore, Figure 3 The example flip-flop 308 has inputs, a clock terminal, a clear terminal, and an output. Figure 3 In the example, OR gate 322 has a first input, a second input, and an output, and power-on reset circuit system 324 has an output.

[0085] exist Figure 3 In the example, the supply terminal of amplifier 302 is coupled to the second terminal of transistor 222, the first input of amplifier 302 is coupled to the output of temperature sensor 224, and the second input of amplifier 302 is coupled to the third terminal of switch 306. Figure 3 In the example, the output of amplifier 302 is coupled to the input of driver 210, the clock terminal of trigger 308, and the control terminal of switch 312. Figure 3 The example amplifier 302 is implemented by an operational amplifier (op-amp) configured as a comparator.

[0086] exist Figure 3 In the example, amplifier 302 compares the voltage at its first input with the voltage at its second input. In response to a voltage at the first input being greater than or equal to the voltage at the second input, amplifier 302 produces a logic high value (e.g., '1', 5 V, etc.) at its output. In response to a voltage at the first input being less than the voltage at the second input, amplifier 302 produces a logic low value (e.g., '0', 0 V, etc.) at its output.

[0087] exist Figure 3 In the example, fault threshold terminal 304 is coupled to the first terminal of switch 306. Figure 3 In the example, fault threshold terminal 304 provides a voltage representing the fault threshold. For example, the voltage supplied at fault threshold terminal 304. This corresponds to a temperature of 170°C. As described above, the fault threshold is sufficiently higher than the temperature of transistors 212 and 216 during normal operating conditions, which is 150°C. Figure 3 In some examples, the fault threshold terminal 304 can be implemented by the output of a linear regulator. In other examples, the fault threshold terminal 304 is implemented by the analog output of a microcontroller.

[0088] exist Figure 3 In the example, the control terminal of switch 306 is coupled to the output of trigger 308, the first terminal of switch 306 is coupled to the fault threshold terminal 304, the second terminal of switch 306 is coupled to the third terminal of switch 312, and the third terminal of switch 306 is coupled to the second input of amplifier 302. Figure 3 In the example, switch 306 is implemented by one or more transistors configured as a single-pole double-throw (SPDT) or three-way switch. For example, switch 306 can be switched to couple a first terminal of switch 306 to a third terminal of switch 306, or to couple a second terminal of switch 306 to a third terminal of switch 306.

[0089] exist Figure 3 In the example, the input of flip-flop 308 is coupled to logic high-side sub-310, the clock terminal of flip-flop 308 is coupled to the output of amplifier 302, the clear terminal of flip-flop 308 is coupled to the output of OR gate 322, and the output of flip-flop 308 is coupled to the control terminal of switch 306 and the enable terminal of amplifier 318. Figure 3In the example, flip-flop 308 is implemented by a D flip-flop. For instance, flip-flop 308 captures the value of its input in response to a rising edge of a signal at its clock terminal and holds that value at its output until the next rising edge of the signal at its clock terminal. Figure 3 Example flip-flop 308 clears the value at its output to a logic low (e.g., '0', 0V, etc.) in response to a rising edge of a signal at its clear terminal. Figure 3 In the example, the signal provided by trigger 308 is called V. FAULT_ASSERT .

[0090] In some examples, flip-flop 308 captures the value at its input in response to a falling edge of the signal at its clock terminal and holds that value at its output until the next falling edge of the signal at its clock terminal. In such examples, a first input of amplifier 302 is coupled to a third terminal of switch 306, and a second input of amplifier 302 is coupled to the output of temperature sensor 224. In some examples, flip-flop 308 clears the value at its output to a logic low value (e.g., '0', 0V, etc.) in response to a falling edge of the signal at its clear terminal. In such examples, OR gate 322 is implemented using NOR gates.

[0091] exist Figure 3 In the example, the logic high-side sub-310 is coupled to the input of the flip-flop 308. In Figure 3 In the example, logic high-side sub-310 provides a voltage representing the logic high value. For example, the voltage provided at logic high-side sub-310. It is '1' or 5 V. In Figure 3 In some examples, the logic high-side sub-sub-310 can be implemented by the output of a linear regulator. In some examples, the logic high-side sub-sub-sub-310 is implemented by the analog output of a microcontroller.

[0092] exist Figure 3 In the example, the control terminal of switch 312 is coupled to the output of amplifier 302, the first terminal of switch 312 is coupled to the upper threshold terminal 316, the second terminal of switch 312 is coupled to the lower threshold terminal 314, and the third terminal of switch 312 is coupled to the second terminal of switch 306. Figure 3 In the example, switch 312 is implemented by one or more transistors configured as an SPDT or a three-way switch. For example, switch 312 can be switched to couple a first terminal of switch 312 to a third terminal of switch 312, or to couple a second terminal of switch 312 to a third terminal of switch 312.

[0093] exist Figure 3 In the example, the lower threshold terminal 314 is coupled to the second terminal of the switch 312. Figure 3 In the example, the lower threshold terminal 314 provides a voltage representing the lower threshold. For example, the voltage supplied at the lower threshold terminal 314 This corresponds to a temperature of 115℃. As described above, the lower threshold of 115℃ is less than the upper threshold of 150℃. Figure 3 In some examples, the lower threshold terminal 314 can be implemented by the output of a linear regulator. In some examples, the lower threshold terminal 314 is implemented by the analog output of a microcontroller.

[0094] exist Figure 3 In the example, the upper threshold terminal 316 is coupled to the first terminal of the switch 312. Figure 3 In the example, the upper threshold terminal 316 provides a voltage representing the upper threshold. For example, the voltage supplied at the upper threshold terminal 316. This corresponds to a temperature of 150°C. As described above, by setting the upper threshold to 150°C, which is below the fault threshold of 170°C and above the lower threshold of 115°C, the temperature-based control circuit 220 maintains a lower average junction temperature than other methods. Figure 3 In some examples, the upper threshold terminal 316 can be implemented by the output of a linear regulator. In some examples, the upper threshold terminal 316 is implemented by the analog output of a microcontroller.

[0095] exist Figure 3 In the example, the supply terminal of amplifier 318 is coupled to the second terminal of transistor 222, the first input of amplifier 318 is coupled to the clear fault threshold terminal 320, the second input of amplifier 318 is coupled to the output of temperature sensor 224, the output of amplifier 318 is coupled to the second input of OR gate 322, and the enable terminal of amplifier 318 is coupled to the output of trigger 308. Figure 3 In the example, amplifier 318 is enabled in response to a signal at the output of flip-flop 308. For example, amplifier 318 is enabled in response to a logic high value (e.g., '1', 5 V, etc.) at the output of flip-flop 308. Conversely, amplifier 318 is disabled in response to a logic low value (e.g., '0', 0 V, etc.) at the output of flip-flop 308.

[0096] exist Figure 3 In the example, amplifier 318 is implemented by an op-amp constructed as a comparator. Figure 3In the example, when enabled, amplifier 318 compares the voltage at its first input with the voltage at its second input. In response to a voltage at the first input being greater than or equal to the voltage at the second input, amplifier 318 produces a logic high value (e.g., '1', 5 V, etc.) at its output. In response to a voltage at the first input being less than the voltage at the second input, amplifier 318 produces a logic low value (e.g., '0', 0 V, etc.) at its output. Figure 3 In the example, the signal provided by amplifier 318 is called V. FAULT_DEASSERT .

[0097] exist Figure 3 In the example, the fault threshold terminal 320 is cleared and coupled to the first input of amplifier 318. Figure 3 In the example, the clear fault threshold terminal 320 provides a voltage representing the clear fault threshold. For example, the voltage supplied at the fault threshold terminal 320. Corresponding to a temperature of 100℃. In Figure 3 In some examples, clearing the fault threshold terminal 320 can be implemented by the output of a linear regulator. In some examples, clearing the fault threshold terminal 320 is implemented by the analog output of a microcontroller.

[0098] exist Figure 3 In the example, the first input of OR gate 322 is coupled to the output of power-on reset circuit system 324, the second input of OR gate 322 is coupled to the output of amplifier 318, and the output of OR gate 322 is coupled to the clear terminal of flip-flop 308. Figure 3 In the examples, OR gate 322 is implemented by one or more transistors. As described above, in one example, OR gate 322 is implemented as a NOR gate. In such examples, flip-flop 308 is configured to clear the value at the output of flip-flop 308 in response to a falling edge at the output of the NOR gate.

[0099] exist Figure 3 In the example, the output of the power-on reset circuit system 324 is coupled to the first input of the OR gate 322. Figure 3 In the example, the power-on reset circuit system 324 is implemented by at least one of an analog circuit system or a digital circuit system. Furthermore, in Figure 3 In the example, the power-on reset circuit system 324 is configured such that when the switching circuit 116... A When reset or powered on, a logic high value (e.g., '1', 5V, etc.) is generated. Otherwise, the power-on reset circuit system 324 is configured to generate a logic low value (e.g., '0', 0V, etc.). In this way, in the switching circuit 116 AWhen reset or powered on, the power-on reset circuit system 324 resets the logic value held at the output of flip-flop 308 via OR gate 322.

[0100] exist Figure 3 In the example, temperature-based control circuitry 220 controls the temperature of at least one of transistors 212 or 216 to prevent damage, while allowing avalanche current during Hi-Pot testing. For example, when no fault state is set, amplifier 302 compares the monitored temperature provided by temperature sensor 224 with a fault threshold provided by fault threshold terminal 304. For example, when no fault state is set, switch 306 is switched to couple the first terminal of switch 306 to the third terminal of switch 306. In this way, the fault state prevents temperature-based control circuitry 220 from providing a signal to driver 210 unless the measured temperature provided by temperature sensor 224 is greater than or equal to the fault threshold.

[0101] exist Figure 3 In the example, in response to a monitored temperature provided by temperature sensor 224 being greater than or equal to a fault threshold provided by fault threshold terminal 304, amplifier 302 generates a logic high value. In response to the logic high value at the output of amplifier 302, driver 210 enables transistors 212 and 216, thereby allowing transistors 212 and 216 to cool. Figure 3 In the example, in response to a logic high value at the output of amplifier 302, switch 312 is switched to couple the second terminal of switch 312 to the third terminal of switch 312.

[0102] exist Figure 3 In the example, in response to a logic high value at the output of amplifier 302, flip-flop 308 captures the logic high value provided by logic high-side sub-310 and holds the logic high value at the output of flip-flop 308. In this way, flip-flop 308 sets a fault state. For example, the fault state indicates that at least one of transistors 212 or 216 is in a breakdown operating mode, wherein at least one of transistors 212 or 216 can conduct avalanche current and dissipate heat. Figure 3 In the example, in response to a logic high value at the output of flip-flop 308, switch 306 switches to couple the second terminal of switch 306 to the third terminal of switch 306. Furthermore, in response to a logic high value at the output of flip-flop 308, amplifier 318 is enabled.

[0103] exist Figure 3 In the example, in response to a fault state being set, amplifier 302 compares the monitored temperature provided by temperature sensor 224 with the lower limit threshold provided by lower limit threshold terminal 314. Figure 3In the example, in response to the monitored temperature provided by temperature sensor 224 being greater than or equal to the lower threshold provided by lower threshold terminal 314, amplifier 302 provides a logic high value. Therefore, after the initial fault state is set, driver 210 continues to enable transistors 212 and 216, thereby allowing transistors 212 and 216 to continue cooling.

[0104] exist Figure 3 In the example, in response to a fault state being set, amplifier 318 compares the fault clearing threshold provided by fault clearing threshold terminal 320 with the monitored temperature provided by temperature sensor 224. Figure 3 In the example, in response to the clear fault threshold provided by clear fault threshold terminal 320 being less than the monitored temperature provided by temperature sensor 224, amplifier 318 generates a logic low value. Therefore, OR gate 322 provides the logic low value to the clear terminal of trigger 308, and trigger 308 retains the set fault state.

[0105] exist Figure 3 In the example, in response to the monitored temperature provided by temperature sensor 224 being lower than the lower threshold provided by lower threshold terminal 314, amplifier 302 generates a logic low value. In response to the logic low value at the output of amplifier 302, driver 210 disables transistors 212 and 216 if switching circuit 116... A If the voltage across the terminals is at the breakdown level, transistors 212 and 216 are allowed to return to the breakdown operation mode. Furthermore, in response to a logic low value at the output of amplifier 302, switch 312 switches to couple its first terminal to its third terminal.

[0106] exist Figure 3 In the example, in response to the first terminal of switch 312 being coupled to the third terminal of switch 312, amplifier 302 compares the monitored temperature provided by temperature sensor 224 with the upper limit threshold provided by upper limit threshold terminal 316. Figure 3 In the example, in response to the monitored temperature provided by temperature sensor 224 being less than the upper threshold provided by upper threshold terminal 316, amplifier 302 provides a logic low value. Therefore, after switch 312 is initially switched to couple the first terminal of switch 312 to the third terminal of switch 312, driver 210 continues to disable transistors 212 and 216 if switching circuit 116... A If the voltage across the terminals is at the breakdown level, transistors 212 and 216 are allowed to return to the breakdown operation mode.

[0107] exist Figure 3In the example, in response to the monitored temperature provided by temperature sensor 224 being greater than or equal to the upper limit threshold provided by upper limit threshold terminal 316, amplifier 302 generates a logic high value. In response to the logic high value at the output of amplifier 302, driver 210 enables transistors 212 and 216, thereby allowing transistors 212 and 216 to cool. Furthermore, in response to the logic high value at the output of amplifier 302, switch 312 toggles to couple the second terminal of switch 312 to the third terminal of switch 312.

[0108] As described above, in response to a fault state being set, amplifier 318 compares the fault clearing threshold provided by fault clearing threshold terminal 320 with the monitored temperature provided by temperature sensor 224. Figure 3 In the example, in response to a clear fault threshold provided by clear fault threshold terminal 320 being greater than or equal to the monitored temperature provided by temperature sensor 224, amplifier 318 generates a logic high value. In response to the logic high value at the output of amplifier 318, OR gate 322 provides a logic high value to the clear terminal of flip-flop 308. For example, in response to a logic high value at the output of OR gate 322, flip-flop 308 generates a logic low value. In response to the logic low value at the output of flip-flop 308, switch 306 toggles to couple the first terminal of switch 306 to the third terminal of switch 306. Furthermore, in response to the logic low value at the output of flip-flop 308, amplifier 318 is disabled.

[0109] Figure 4 To indicate Figure 1 and 2 Switching circuit 116 A Example state diagram 400 for example operations. Figure 4 In the example, state diagram 400 includes a representation of switch circuit 116. A The examples include a first example state 402 representing normal operating conditions, a second example state 404 representing a thermal fault during which transistors 212 and 216 are cooled, and a third example state 406 representing a thermal fault during which at least one of transistors 212 or 216 is permitted to conduct avalanche current. Figure 4 In the example, temperature-based control circuit 220 adjusts the temperature of at least one of transistors 212 or 216 in response to a sensed temperature monitored by temperature sensor 224.

[0110] exist Figure 4 In the example, in state 402, transistors 212 and 216 are disabled and switch circuit 116 is blocked. A The voltage at both ends. Furthermore, in state 402, the fault state maintained by the temperature-based control circuit 220 is not set. Figure 4In the example, in state 402, the temperature-based control circuit 220 monitors the temperature sensor 224 and determines whether the monitored temperature is greater than or equal to a fault threshold of 170°C. In response to the temperature-based control circuit 220 determining that the monitored temperature is less than the fault threshold, the switching circuit 116... A At the first example transition 408, the system returns to state 402. In response to the temperature-based control circuit 220 determining that the monitored temperature is greater than or equal to a fault threshold, the switching circuit 116... A In the second example, transition 410 changes to state 404.

[0111] exist Figure 4 In the example, in state 404, transistors 212 and 216 are enabled, and a fault state maintained by temperature-based control circuitry 220 is set. Figure 4 In the example, in state 404, the temperature-based control circuit 220 monitors the temperature sensor 224 and determines whether the monitored temperature is greater than or equal to a lower threshold of 115°C. In response to the temperature-based control circuit 220 determining that the monitored temperature is greater than or equal to the lower threshold, the switching circuit 116... A At the third example transition 412, the system returns to state 404. In response to the temperature-based control circuit 220 determining that the monitored temperature is below a lower threshold, the switching circuit 116... A In the fourth example, transition 414 changes to state 406.

[0112] exist Figure 4 In the example, in state 406, transistors 212 and 216 are disabled, and a fault state maintained by temperature-based control circuitry 220 is set. Figure 4 In the example, in state 406, the temperature-based control circuit 220 monitors the temperature sensor 224 and determines whether the monitored temperature is greater than or equal to an upper limit threshold of 150°C. Furthermore, in state 406, the temperature-based control circuit 220 determines whether a fault clearing threshold of 100°C is greater than or equal to the monitored temperature provided by the temperature sensor 224. In this way, the temperature-based control circuit 220 determines whether the monitored temperature provided by the temperature sensor 224 is between the upper limit threshold of 150°C and the fault clearing threshold of 100°C.

[0113] exist Figure 4 In the example, in response to the temperature-based control circuit 220 determining that the monitored temperature is less than an upper limit threshold and greater than a fault clearing threshold, the switching circuit 116... A At the fifth example transition 416, the system returns to state 406. In response to the temperature-based control circuit 220 determining that the monitored temperature is greater than or equal to an upper limit threshold, the switching circuit 116... AAt transition 418 in the sixth example, the system returns to state 404. In response to temperature-based control circuitry 220 determining that the monitored temperature is less than or equal to a clear fault threshold, switching circuitry 116... A In the seventh example, transition 420 returns to state 402.

[0114] Figure 5 To indicate Figure 1 and 2 Switching circuit 116 A The operation example is illustrated in the timing diagram 500. Figure 5 In the example, timing diagram 500 includes a first example plot 502, a second example plot 504, a third example plot 506, and a fourth example plot 508. Figure 5 In the examples, graphs 502 and 504 depict the relationship between voltage in volts and time in seconds (s). Furthermore, graph 506 depicts the relationship between temperature in degrees Celsius and time in seconds, and graph 508 depicts the relationship between a binary signal and time in seconds.

[0115] exist Figure 5 In the example, graph 502 includes a plot of the voltage (V) provided by voltage source 104. HV The first example curve in Figure 510. Figure 5 In the example, graph 504 includes a depiction of switch circuit 116. A First terminal and switching circuit 116 A The second example curve 512 shows the voltage (V1-V2) across the second terminal. Furthermore, in... Figure 5 In the example, graph 506 includes a third example graph 514 depicting the monitored temperature provided by temperature sensor 224. Figure 5 In the example, graph 508 contains a depiction of the binary signal V provided by trigger 308. FAULT_ASSERT The fourth example curve is shown in Figure 516.

[0116] exist Figure 5 In the example, before the first example time 518 (t1), voltage source 104 provides a voltage of 3,000 V, for example, during the Hi-Pot test of system 100. Before time 518 (t1), transistors 212 and 216 are disabled. Therefore, switching circuit 116... A The voltage across the terminals is at a breakdown level of 1,400 V in response to the 3,000 V supplied by voltage source 104. This is because of the switching circuit 116. AThe voltage across the transistors is at the breakdown level, so at least one of transistors 212 or 216 enters a breakdown operating mode, where at least one of transistors 212 or 216 conducts avalanche current and heat. Therefore, the temperature of at least one of transistors 212 or 216 increases, and the monitored temperature provided by temperature sensor 224 also increases.

[0117] exist Figure 5 In the example, at time 518 (t1), the monitored temperature provided by temperature sensor 224 reaches the fault threshold (T) of 170°C. FAULT In response to a fault threshold (T) where the monitored temperature provided by temperature sensor 224 meets (e.g., greater than or equal to) 170°C. FAULT Amplifier 302 provides a signal to driver 210. In response to the signal at the output of amplifier 302, driver 210 enables transistors 212 and 216 to switch circuit 116. A The voltage across the terminals is regulated from a breakdown level of 1,400 V to a 5 V supply level for the driver 210 and the temperature-based control circuit 220. Furthermore, in response to a signal at the output of amplifier 302, trigger 308 asserts a fault condition.

[0118] exist Figure 5 In the example, between time 518 (t1) and the second example time 520 (t2), voltage source 104 continues to supply a voltage of 3,000 V. Because transistors 212 and 216 are enabled, switching circuit 116... A The voltage across the terminals is adjusted to 5 V between time 518 (t1) and time 520 (t2). As a result, the temperature of at least one of transistors 212 or 216 decreases, and the monitored temperature provided by temperature sensor 224 also decreases.

[0119] exist Figure 5 In the example, at time 520 (t2), the monitored temperature provided by temperature sensor 224 reaches the lower limit threshold (T) of 115°C. FALL In response to the monitored temperature provided by temperature sensor 224 not meeting (e.g., less than) the lower threshold (T) of 115°C. FALL Amplifier 302 provides a signal to driver 210. In response to the signal at the output of amplifier 302, driver 210 disables transistors 212 and 216. Therefore, switching circuit 116... A The voltage across the terminals returns to the breakdown level of 1,400 V. Therefore, the temperature of at least one of transistors 212 or 216 increases, as does the temperature monitored by temperature sensor 224.

[0120] exist Figure 5 In the example, between time 520 (t2) and the third example time 522 (t3), voltage source 104 continues to supply a voltage of 3,000 V. Between time 520 (t2) and time 522 (t3), transistors 212 and 216 are disabled. Therefore, switching circuit 116... A The voltage across the terminals is 1,400 V in response to the 3,000 V supplied by voltage source 104. Therefore, the temperature of at least one of transistors 212 or 216 increases, as does the temperature monitored by temperature sensor 224.

[0121] exist Figure 5 In the example, at time 522 (t3), the monitored temperature provided by temperature sensor 224 reaches the upper limit threshold (T) of 150°C. RISE In response to the monitored temperature provided by temperature sensor 224 meeting (e.g., greater than or equal to) an upper limit threshold (T) of 150°C. RISE Amplifier 302 provides a signal to driver 210. In response to the signal at the output of amplifier 302, driver 210 enables transistors 212 and 216. As described above, driver 210 enables transistors 212 and 216 to switch circuit 116. A The voltage across the terminals is regulated from a breakdown level of 1,400 V to a 5 V supply level for the driver 210 and the temperature-based control circuit 220.

[0122] exist Figure 5 In the example, between time 522 (t3) and the fourth example time 524 (t4), voltage source 104 continues to supply a voltage of 3,000 V. Because transistors 212 and 216 are enabled, switching circuit 116... A The voltage across the terminals is adjusted to 5 V between time 522 (t3) and time 524 (t4). As a result, the temperature of at least one of transistors 212 or 216 decreases, and the monitored temperature provided by temperature sensor 224 also decreases.

[0123] exist Figure 5 In the example, at time 524 (t4), the monitored temperature provided by temperature sensor 224 reaches the lower threshold of 115°C (T). FALL In response to the monitored temperature provided by temperature sensor 224 not meeting (e.g., less than) the lower threshold (T) of 115°C. FALL Amplifier 302 provides a signal to driver 210. In response to the signal at the output of amplifier 302, driver 210 disables transistors 212 and 216. Therefore, switching circuit 116... AThe voltage across the terminals returns to the breakdown level of 1,400 V. Therefore, the temperature of at least one of transistors 212 or 216 increases, as does the temperature monitored by temperature sensor 224.

[0124] exist Figure 5 In the example, between time 524 (t4) and the fifth example time 526 (t5), voltage source 104 continues to supply a voltage of 3,000 V. Between time 524 (t4) and time 526 (t5), transistors 212 and 216 are disabled. Therefore, switching circuit 116... A The voltage across the terminals is 1,400 V in response to the 3,000 V supplied by voltage source 104. Therefore, the temperature of at least one of transistors 212 or 216 increases, as does the temperature monitored by temperature sensor 224.

[0125] exist Figure 5 In the example, at time 526 (t5), the monitored temperature provided by temperature sensor 224 reaches the upper limit threshold (T) of 150°C. RISE In response to the monitored temperature provided by temperature sensor 224 meeting (e.g., greater than or equal to) an upper limit threshold (T) of 150°C. RISE Amplifier 302 provides a signal to driver 210. In response to the signal at the output of amplifier 302, driver 210 enables transistors 212 and 216. As described above, driver 210 enables transistors 212 and 216 to switch circuit 116. A The voltage across the terminals is regulated from a breakdown level of 1,400 V to a 5 V supply level for the driver 210 and the temperature-based control circuit 220.

[0126] exist Figure 5 In the example, between time 526 (t5) and the sixth example time 528 (t6), voltage source 104 continues to supply a voltage of 3,000 V. Because transistors 212 and 216 are enabled, switching circuit 116... A The voltage across the terminals is adjusted to 5 V between time 526 (t5) and time 528 (t6). Therefore, the temperature of at least one of transistors 212 or 216 decreases, and the monitored temperature provided by temperature sensor 224 also decreases. Figure 5 In the example, at time 528(t6), the monitored temperature provided by temperature sensor 224 reaches the lower threshold of 115°C (T). FALL In response to the monitored temperature provided by temperature sensor 224 not meeting (e.g., less than) the lower threshold (T) of 115°C. FALLAmplifier 302 provides a signal to driver 210. In response to the signal at the output of amplifier 302, driver 210 disables transistors 212 and 216.

[0127] exist Figure 5 In the example, at time 528 (t6), the voltage supplied by voltage source 104 changes from 3,000 V to 1,000 V. For instance, the Hi-Pot test of system 100 ends at time 528 (t6). Figure 5 In the example, switch circuit 116 A The voltage across the terminals changes from 5 V to 1,000 V in response to the 3,000 V supplied by voltage source 104. Therefore, transistors 212 and 216 are not in breakdown operation mode and do not conduct avalanche current.

[0128] Therefore, the temperature of at least one of transistors 212 or 216 continues to decrease, and the monitored temperature provided by temperature sensor 224 continues to decrease. Figure 5 In the example, at the seventh example time 530 (t7), the monitored temperature provided by temperature sensor 224 reaches the fault clearing threshold (T0) of 100°C. DEASSERT ). In response to the monitored temperature provided by temperature sensor 224 not meeting (e.g., less than) the clear fault threshold (T) of 100°C. DEASSERT Amplifier 318 provides a signal to trigger 308. In response to the signal at the output of amplifier 318, trigger 308 clears the assertion fault state.

[0129] Figure 6 The flowchart illustrates at least one of the example machine-readable instructions or example operations 600, which can be implemented, instantiated, or executed by at least one of a programmable circuit system. Figure 2 and 3 Temperature-based control circuit 220. Figure 6 At least one of the example machine-readable instructions or example operations 600 begins at block 602, where temperature-based control circuitry 220 monitors a temperature sensor to determine a measured temperature indicating the temperature of a transistor implemented on the die. For example, amplifier 302 monitors temperature sensor 224 to determine a measured temperature indicating the temperature of at least one of transistors 212 or 216. Figure 6 In the example, the transistor is disabled.

[0130] exist Figure 6In the example, at block 604, temperature-based control circuitry 220 determines whether the measured temperature is greater than or equal to a fault threshold. For example, amplifier 302 determines whether the measured temperature is greater than or equal to a fault threshold of 170°C. In response to temperature-based control circuitry 220 determining that the measured temperature is not greater than or equal to the fault threshold (block 604: No), at least one of machine-readable instructions or operations 600 returns to block 602. In response to temperature-based control circuitry 220 determining that the measured temperature is greater than or equal to the fault threshold (block 604: Yes), at least one of machine-readable instructions or operations 600 proceeds to block 606.

[0131] exist Figure 6 In the example, at block 606, temperature-based control circuitry 220 provides a first signal to a driver, which controls the transistors to dissipate heat in response to the first signal. For example, amplifier 302 provides the first signal to driver 210, and driver 210 enables transistors 212 and 216 in response to the first signal. Figure 6 In the example, at block 608, temperature-based control circuitry 220 sets a fault state to indicate that the transistor is in a breakdown operating mode. For example, trigger 308 sets a fault state to indicate that at least one of transistors 212 or 216 is in a breakdown operating mode.

[0132] exist Figure 6 In the example, at block 610, temperature-based control circuitry 220 monitors a temperature sensor to determine the measured temperature. For example, amplifier 302 monitors temperature sensor 224 to determine the measured temperature, which indicates the temperature of at least one of transistors 212 or 216. Figure 6 In the example, at block 612, temperature-based control circuitry 220 determines whether the measured temperature is below a lower threshold. For example, amplifier 302 determines whether the measured temperature is below a lower threshold of 115°C. In response to temperature-based control circuitry 220 determining that the measured temperature is not below the lower threshold (block 612: No), at least one of machine-readable instructions or operations 600 returns to block 610.

[0133] In response to the temperature-based control circuit 220 determining that the measured temperature is below a lower threshold (block 612: Yes), at least one of machine-readable instructions or operations 600 proceeds to block 614. At block 614, the temperature-based control circuit 220 provides a second signal to a driver, which controls the transistors in response to the second signal. For example, amplifier 302 provides the second signal to driver 210, and driver 210 disables transistors 212 and 216 in response to the second signal. Figure 6In the example, at block 616, temperature-based control circuitry 220 monitors a temperature sensor to determine the measured temperature. For example, amplifiers 302 and 318 monitor temperature sensor 224 to determine the measured temperature, which indicates the temperature of at least one of transistors 212 or 216.

[0134] exist Figure 6 In the example, at block 618, temperature-based control circuitry 220 determines whether the measured temperature is greater than or equal to an upper limit threshold. For example, amplifier 302 determines whether the measured temperature is greater than or equal to an upper limit threshold of 150°C. In response to temperature-based control circuitry 220 determining that the measured temperature is greater than or equal to the upper limit threshold (block 618: Yes), at least one of machine-readable instructions or operations 600 proceeds to block 620. Figure 6 In the example, at block 620, temperature-based control circuitry 220 provides a third signal to a driver, which controls the transistors to dissipate heat in response to the third signal. For example, amplifier 302 provides a third signal to driver 210, and driver 210 enables transistors 212 and 216 in response to the third signal.

[0135] exist Figure 6 In the example, in response to temperature-based control circuitry 220 determining that the measured temperature is not greater than or equal to an upper limit threshold (box 618: No), at least one of machine-readable instructions or operations 600 proceeds to box 622. Figure 6 In the example, at block 622, temperature-based control circuitry 220 determines whether the measured temperature is less than a clear fault threshold. For example, amplifier 318 determines whether the measured temperature is less than a clear fault threshold of 100°C. In response to temperature-based control circuitry 220 determining that the measured temperature is not less than the clear fault threshold (block 622: No), at least one of machine-readable instructions or operations 600 returns to block 616.

[0136] In response to the temperature-based control circuit 220 determining that the measured temperature is less than a fault-clearing threshold (block 622: Yes), at least one of machine-readable instructions or operations 600 proceeds to block 624. At block 624, the temperature-based control circuit 220 clears the fault state. For example, trigger 308 clears the fault state. Figure 6In the example, at block 626, temperature-based control circuitry 220 determines whether to continue operation. For example, if temperature-based control circuitry 220 is powered, it determines to continue operation. In response to temperature-based control circuitry 220 determining to continue operation (block 626: Yes), at least one of machine-readable instructions or operations 600 returns to block 602. In response to temperature-based control circuitry 220 determining not to continue operation (block 626: No), at least one of machine-readable instructions or operations 600 terminates.

[0137] Figure 7 As an example block diagram of a programmable circuit system platform 700, the programmable circuit system platform is configured to perform one or a combination of the following operations: implement or instantiate. Figure 6 At least one of the machine-readable instructions or operations in 600 is used to implement Figure 2 and 3 The programmable circuit system platform 700 is a temperature-based control circuit 220. The programmable circuit system platform 700 can be, for example, an electrical system in a vehicle (e.g., an EV or HEV). The example programmable circuit system platform 700 includes a programmable circuit system 712. The example programmable circuit system 712 is hardware. For example, the programmable circuit system 712 can be implemented by one or more integrated circuits, logic circuits, FPGAs, microprocessors, CPUs, GPUs, DSPs, or microcontrollers from any desired series or manufacturer. The programmable circuit system 712 can be implemented by at least one programmable circuit, such as one or more semiconductor-based (e.g., silicon-based) devices. In this example, the programmable circuit system 712 implements the exemplary temperature-based control circuit 220.

[0138] The example programmable circuit system 712 includes local memory 713 (e.g., cache, registers, etc.). The example programmable circuit system 712 communicates via bus 718 with main memories 714, 716, including volatile memory 714 and non-volatile memory 716. The volatile memory 714 may be implemented by one or more synchronous dynamic random access memory (SDRAM), dynamic random access memory (DRAM), RAMBUS® dynamic random access memory (RDRAM®), or any other type of RAM device. The non-volatile memory 716 may be implemented by flash memory or one or a combination of any other desired type of memory device. Access to the example main memories 714, 716 is controlled by a memory controller 717. In some examples, the memory controller 717 may be implemented by one or more integrated circuits, logic circuits, microcontrollers, or any other type of circuit system from any desired series or manufacturer to manage data flows to and from the main memories 714, 716.

[0139] The example programmable circuit system platform 700 also includes an interface circuit system 720. The interface circuit system 720 can be implemented in hardware according to any type of interface standard, such as an Ethernet interface, a Universal Serial Bus (USB) interface, a Bluetooth® interface, a Near Field Communication (NFC) interface, a Peripheral Component Interconnect (PCI) interface, or a Peripheral Component Interconnect High Speed ​​(PCIe) interface.

[0140] In the example, one or more input devices 722 are connected to the interface circuitry system 720. The input devices 722 allow a user (e.g., a human user, a machine user, etc.) to input one or a combination of data or commands into the programmable circuitry system 712. The input devices 722 may be implemented as one or a combination of, for example, an audio sensor, a microphone, a camera (still or video), a keyboard, buttons, a mouse, a touchscreen, a trackpad, a trackball, a dot device, or a speech recognition system.

[0141] One or more output devices 724 are also connected to the example interface circuitry 720. The one or more output devices 724 may be implemented, for example, by one or a combination of a display device (e.g., a light-emitting diode (LED), an organic light-emitting diode (OLED), a liquid crystal display (LCD), a cathode ray tube (CRT) display, a home-switching (IPS) display, a touchscreen, etc.), a haptic output device, a printer, or a speaker. Therefore, the example interface circuitry 720 includes one or a combination of a graphics driver card, a graphics driver chip, or a graphics processor circuitry system such as a GPU.

[0142] The example interface circuit system 720 also includes communication devices, such as a transmitter, receiver, transceiver, modem, residential gateway, wireless access point, or network interface, or a combination thereof, to facilitate the exchange of data with external machines (e.g., any kind of computing device) via network 726. Communication can be carried out via, for example, Ethernet connections, digital subscriber line (DSL) connections, telephone line connections, coaxial cable systems, satellite systems, beyond-line-of-sight wireless systems, line-of-sight wireless systems, cellular telephone systems, optical connections, etc.

[0143] The example programmable circuit system platform 700 also includes one or more mass storage disks or devices 728 for storing one or more of firmware, software, or data. Examples of such mass storage disks or devices 728 include one or more magnetic storage devices (e.g., floppy disks, drives, HDDs, etc.), optical storage devices, RAID systems, or solid-state storage disks or devices, such as flash memory devices and SSDs.

[0144] It can be by Figure 6The machine-readable instruction 732, which implements at least one of the machine-readable instructions or operations 600, may be stored in one or a combination of the following locations: in a mass storage device 728, in volatile memory 714, in non-volatile memory 716, or on at least one non-transitory computer-readable storage medium (which may be removable).

[0145] Although Figure 3 The implementation is explained in the text. Figure 2 An example of a temperature-based control circuit 220, but Figure 3 One or more of the elements, processes, or devices described herein may be combined, divided, rearranged, omitted, eliminated, or implemented in any other way. Furthermore, example amplifier 302, example fault threshold terminal 304, example switch 306, example trigger 308, example logic high-side terminal 310, example switch 312, example lower threshold terminal 314, example upper threshold terminal 316, example amplifier 318, example clear fault threshold terminal 320, example OR gate 322, example power-on reset circuit system 324, or more generally... Figure 2 and 3 The exemplary temperature-based control circuit 220 can be implemented by hardware alone or by a combination of hardware, software, and firmware. Thus, for example, any of the following: example amplifier 302, example fault threshold terminal 304, example switch 306, example trigger 308, example logic high-side sub-310, example switch 312, example lower threshold terminal 314, example upper threshold terminal 316, example amplifier 318, example clear fault threshold terminal 320, example OR gate 322, example power-on reset circuit system 324, or more generally, the exemplary temperature-based control circuit 220 can be implemented by a programmable circuit system in combination with: one or more machine-readable instructions (e.g., firmware or software), a processor circuit system, one or more analog circuits, one or more digital circuits, one or more logic circuits, one or more programmable processors, one or more programmable microcontrollers, one or more graphics processing units (GPUs), one or more digital signal processors (DSPs), one or more ASICs, one or more programmable logic devices (PLDs), or one or more field-programmable logic devices (FPLDs), such as FPGAs. Furthermore, in addition to or replacing Figure 3 One or more elements, processes or apparatus described herein, Figure 3 The exemplary temperature-based control circuit 220 may also include one or more elements, processes or devices, or may include more than one of any or all of the illustrated elements, processes and devices.

[0146] Figure 6 The example shown represents machine-readable instructions (which can be executed by a programmable circuit system to...) Figure 2 and3 (at least one of the implementations or instantiations of the temperature-based control circuit 220) or represents an example operation (which can be executed by a programmable circuit system to control...) Figure 2 and 3 One or more flowcharts (for at least one of the implementations or instantiations of the temperature-based control circuit 220). Machine-readable instructions may be for programmable circuit systems (e.g., in conjunction with the following). Figure 7 The programmable circuit system 712 shown in the example programmable circuit system platform 700 described herein implements one or more executable programs or one or more portions of one or more executable programs, and may be one or more functions or portions of functions to be executed by the example programmable circuit system (e.g., FPGA). In some examples, operations, tasks, etc., are performed or executed in a real-world manner in response to machine-readable instructions. As used herein, “automation” means without human intervention.

[0147] The program may be embodied in instructions (e.g., at least one of software or firmware) stored on one or more non-transitory computer-readable or machine-readable storage media, such as one or a combination of: cache memory, magnetic storage device or disk, optical storage device or disk, redundant array of independent disks (RAID), registers, ROM, solid-state drive (SSD), SSD memory, non-volatile memory (e.g., electrically erasable programmable read-only memory (EEPROM), flash memory, etc.), volatile memory (e.g., any type of random access memory (RAM), etc.), or any other storage device or disk. The instructions on the non-transitory computer-readable or machine-readable media may be programmed or executed by a programmable circuit system located in one or more hardware devices, but the entire program or portions thereof may alternatively be executed or instantiated or embodied in dedicated hardware by one or more hardware devices other than the programmable circuit system. Machine-readable instructions may be distributed across multiple hardware devices or executed by two or more hardware devices (e.g., server and client hardware devices). For example, the client hardware device may be implemented by an endpoint client hardware device (e.g., a hardware device associated with at least one of a human user or a machine user) or an intermediate client hardware device gateway (e.g., a radio access network (RAN)) that facilitates communication between the server and the endpoint client hardware device. Similarly, non-transitory computer-readable storage media may comprise one or more media. Furthermore, although references... Figure 6The flowcharts described herein illustrate example programs, but many other methods of implementing the exemplary temperature-based control circuit 220 may be used alternatively. For example, the execution order of the blocks of one or more flowcharts may be changed, or some of the described blocks may be altered, eliminated, or combined. Additionally or alternatively, any or all blocks of the flowcharts may be implemented by one or more hardware circuits (e.g., processor circuitry, discrete analog circuitry, discrete digital circuitry, integrated analog circuitry, integrated digital circuitry, FPGA, ASIC, comparator, operational amplifier, logic circuitry, etc.) configured to perform the corresponding operations without implementing software or firmware. Programmable circuitry systems may be distributed across different network locations or local to one or more hardware devices (e.g., single-core processors (e.g., single-core CPUs), multi-core processors (e.g., multi-core CPUs, XPUs, etc.)). As used herein, programmable circuitry systems comprise any type of circuitry, such as one or a combination of a CPU or FPGA, that can be programmed to perform desired functions. A programmable circuit system may include one or more CPUs and one or more FPGAs located in the same package (e.g., the same integrated circuit (IC) package or in two or more separate housings), one or more CPUs or FPGAs in a single machine, one or more CPUs or FPGAs distributed across multiple servers in a server rack, or multiple processors distributed across one or more server racks. Alternatively or additionally, in any of the contexts described above, a programmable circuit system may include a programmable logic device (PLD), a general-purpose array logic (GAL) device, a programmable array logic (PAL) device, a complex programmable logic device (CPLD), a simple programmable logic device (SPLD), a microcontroller unit (MCU), a programmable system-on-a-chip (PSoC), or any combination thereof.

[0148] Machine-readable instructions described herein can be stored in one or more of the following formats: compressed, encrypted, segmented, compiled, executable, and encapsulated. As described herein, machine-readable instructions can be stored as data (e.g., computer-readable data, machine-readable data, one or more bits (e.g., one or more computer-readable bits, one or more machine-readable bits, etc.), bit streams (e.g., computer-readable bit streams, machine-readable bit streams, etc.)) or data structures (e.g., as one or more parts of an instruction, code, a representation of code, etc.). For example, machine-readable instructions can be segmented and stored on one or more storage devices, disks, or computing devices (e.g., servers) located at the same or different locations within a network or network set. Machine-readable instructions may require one or more of the following to be installed, modified, adapted, updated, combined, supplemented, configured, decrypted, decompressed, decapsulated, distributed, redistributed, compiled, etc., to make them directly readable, interpretable, or executable by a computing device or other machine. For example, machine-readable instructions may be stored individually in multiple portions compressed, encrypted, or stored on separate computing devices, wherein the portions, when decrypted, decompressed, or combined, form an implementation that together can form a set of one or more computer-executable or machine-executable instructions for one or more functions or operations of a program such as those described herein.

[0149] In another example, it may be necessary to adjust the machine-readable instructions (e.g., storage settings, data input, recorded network addresses, etc.) before they can be fully or partially executed. Therefore, machine-readable, computer-readable, or machine-readable media as used herein can contain one or a combination of instructions and one or more programs, regardless of the specific format or state of the machine-readable instructions or the one or more programs. The machine-readable instructions described herein can be represented by any past, present, or future instruction language, scripting language, programming language, etc. For example, machine-readable instructions can be represented using any of the following languages: C, C++, C-Sharp, etc.

[0150] As mentioned above, Figure 6Example operations can be performed using executable instructions (e.g., at least one of computer-readable instructions or machine-readable instructions) stored on one or more non-transitory computer-readable or machine-readable media. As used herein, the terms non-transitory computer-readable media, non-transitory computer-readable storage media, non-transitory machine-readable media, and non-transitory machine-readable storage media are expressly defined to include any type of computer-readable storage device or disk, excluding propagation signals and transmission media. Examples of such non-transitory computer-readable media, non-transitory computer-readable storage media, non-transitory machine-readable media, or non-transitory machine-readable storage media include one or more optical storage devices, magnetic storage devices, flash memory, read-only memory (ROM), caches, any type of RAM, registers, or any other storage device or disk, wherein information is stored for any duration (e.g., extended time periods, permanent, brief cases, temporary buffers, cached information). As used herein, the terms "non-transitory computer-readable storage device" and "non-transitory machine-readable storage device" are defined as comprising any physical (mechanical, magnetic, electromechanical, or electrical) hardware for retaining information for a period of time, but excluding the propagation of signals and the transmission medium. Examples of non-transitory computer-readable storage devices or non-transitory machine-readable storage devices include one or a combination of the following: any type of random access memory, any type of read-only memory, solid-state memory, flash memory, optical disk, magnetic disk, disk drive, or redundant array of independent disks (RAID) system. As used herein, the term "device" refers to a physical structure, such as one or a combination of the following: mechanical, electromechanical, or electrical equipment, hardware, or circuitry that may or may not be adapted by, or manufactured to execute, computer-readable instructions, machine-readable instructions, etc.

[0151] "Includes" and "includes" (and all their forms and tenses) are used herein as open-ended terms. Therefore, whenever a technical solution uses any form of "includes" or "includes" (e.g., includes, includes, comprising, having, etc.) as a preposition or within any type of technical solution citation, additional elements, terms, etc., may exist without exceeding the scope of the corresponding technical solution or citation. As used herein, the phrase "at least" is open-ended when used as a transitional term, for example, in a technical solution preposition, in the same way as the terms "includes" and "includes". As used herein in the context of describing structures, components, items, objects, and things, the phrase "at least one of A and B" means an implementation that includes either: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. Similarly, as used herein in the context of describing structures, components, projects, objects, and things, the phrase “at least one of A or B” means an implementation that includes any of the following: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. As used herein in the context of describing the execution or implementation of processes, instructions, actions, activities, etc., the phrase “at least one of A or B” means an implementation that includes any of the following: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B. Similarly, as used herein in the context of describing the execution or implementation of processes, instructions, actions, activities, etc., the phrase “at least one of A or B” means an implementation that includes any of the following: (1) at least one A, (2) at least one B, or (3) at least one A and at least one B.

[0152] As used herein, singular references (e.g., “a(a)”, “an”, “first”, “second”, etc.) do not exclude plurals. As used herein, the term “a(a)” or “an” refers to one or more of the objects mentioned. The terms “a(a)” (or “an”), “one or more”, and “at least one” are used interchangeably herein. Furthermore, although listed separately, multiple components, elements, or actions may be implemented by, for example, the same entity or object. Moreover, while individual features may be included in different examples or technical solutions, these features may be combined, and inclusion in different examples or technical solutions does not imply that the combination of features is infeasible or disadvantageous at least one of them.

[0153] As used herein, unless otherwise indicated, a connection reference (e.g., attachment, coupling, connection, and joining) may include an intermediate member between elements referenced by the connection reference between those elements or by at least one of them in relative movement. Therefore, a connection reference does not necessarily imply that two elements are directly connected or fixed to each other.

[0154] Unless otherwise specifically stated, descriptive terms such as “first,” “second,” “third,” etc., are used herein without intending or otherwise indicating priority, physical order, arrangement, or any sorting in the list, but only as markers or arbitrary names to distinguish elements in order to facilitate understanding of the described examples. In some examples, the descriptive term “first” may be used to refer to an element in a detailed description, while the same element may be referred to in the technical solution by different descriptive terms such as “second” or “third.” In such instances, such descriptive terms are used only to clearly identify those elements within the context of this specification (e.g., within the technical solution), in which elements may otherwise share the same name.

[0155] As used herein, the phrase “communication” includes variations thereof, encompassing one or a combination of direct communication or indirect communication through one or more intermediate components, and not requiring direct physical (e.g., wired) communication or constant communication, but also including selective communication at at least one of periodic intervals, predetermined intervals, non-periodic intervals, or one-off events.

[0156] As used herein, a “programmable circuit system” is defined as comprising at least one of the following: (i) one or more special-purpose circuits (e.g., application-specific integrated circuits (ASICs)) configured to perform one or more specific operations and comprising one or more semiconductor-based logic devices (e.g., electrical hardware implemented by one or more transistors), or (ii) one or more general-purpose semiconductor-based circuits programmable by instructions to perform one or more specific functions or one or more operations and comprising one or more semiconductor-based logic devices (e.g., electrical hardware implemented by one or more transistors). Examples of programmable circuit systems include programmable microprocessors, such as: a central processing unit (CPU) that can execute a first instruction to perform one or more operations or functions; a field-programmable gate array (FPGA) that can be programmed with a second instruction to configure or construct at least one of the FPGAs, thereby instantiating one or more operations or functions corresponding to the first instruction; a graphics processing unit (GPU) that can execute a first instruction to perform one or more operations or functions; a digital signal processor (DSP) that can execute a first instruction to perform one or more operations or functions; an XPU; a network processing unit (NPU); one or more microcontrollers that can execute a first instruction to perform one or more operations or functions; or an integrated circuit, such as an application-specific integrated circuit (ASIC). For example, an XPU can be implemented by a heterogeneous computing system that includes a variety of programmable circuit systems (e.g., one or more FPGAs, one or more CPUs, one or more GPUs, one or more NPUs, one or more DSPs, etc., and one or more of any combination thereof) and orchestration techniques (e.g., one or more application programming interfaces (APIs) that can assign one or more computing tasks to any one or more of the various types of programmable circuit systems that are suitable and can be used to perform one or more computing tasks.

[0157] As used herein, an integrated circuit / circuit system is defined as one or more semiconductor packages containing one or more circuit elements, such as transistors, capacitors, inductors, resistors, current paths, diodes, etc. For example, an integrated circuit can be implemented as one or more of an ASIC, FPGA, chip, microchip, programmable circuit system, semiconductor substrate coupling multiple circuit elements, system-on-a-chip (SoC), etc.

[0158] In this specification, the term "coupled" may encompass a connection, communication, or signaling path that enables the functional relationship to be consistent with this specification. For example, if device A generates a signal to control device B to perform an action, then: (a) in a first example, device A is coupled to device B via a direct connection; or (b) in a second example, device A is coupled to device B via an intermediate component C, provided that the intermediate component C does not alter the functional relationship between device A and device B, such that device B is controlled by device A via a control signal generated by device A.

[0159] A device “configured” to perform a task or function may be configured (e.g., programmed or hardwired at least) to perform the function during manufacturing by the manufacturer, or may be configured (or reconfigurable) by the user after manufacturing to perform the function and / or at least one of other additional or alternative functions. The configuration may be performed through at least one of the device’s firmware or software programming, through at least one of the construction or layout of the device’s hardware components and interconnects, or a combination thereof.

[0160] As used herein, the terms “terminal,” “node,” “interconnect,” “pin,” and “lead” are used interchangeably. Unless specifically stated otherwise, these terms are generally used to refer to interconnections or ends between device elements, circuit elements, integrated circuits, devices, or other electronic or semiconductor components.

[0161] In this specification and claims, the described "circuit system" may comprise one or more circuits. A circuit or device described herein as including certain components may be substantially adaptable to coupling to those components used to form the described circuit system or device. For example, a structure described as comprising one or more semiconductor elements (e.g., transistors), one or more passive elements (e.g., one or a combination of resistors, capacitors, or inductors), or one or more sources (e.g., at least one of voltage sources or current sources) may substantially comprise only the semiconductor element within a single physical device (e.g., at least one of a semiconductor die or integrated circuit (IC) package) and may be adapted to be coupled at manufacturing time or after manufacturing time, for example by at least one of an end user or a third party, to at least some of the passive elements or sources to form the described structure.

[0162] The circuits described herein can be reconfigured to include replaced components to provide functionality at least partially similar to that available before the component replacement. Unless otherwise stated, a component shown as a resistor generally represents any one or more elements coupled in at least one of series or parallel to provide the amount of impedance represented by the shown resistor. For example, a resistor or capacitor shown and described herein as a single component may actually be multiple resistors or capacitors coupled in parallel between the same nodes. For example, a resistor or capacitor shown and described herein as a single component may actually be multiple resistors or capacitors coupled in series between the same two nodes as the single resistor or capacitor. While some elements in the described examples are included in an integrated circuit and others are outside the integrated circuit, in other examples, additional or fewer features may be incorporated into the integrated circuit. Additionally, some or all of the features described as outside the integrated circuit may be included in the integrated circuit, and some features described as inside the integrated circuit may be incorporated outside the integrated circuit. As used herein, the term "integrated circuit" means one or more circuits that are at least one of the following: (i) incorporated in / above a semiconductor substrate; (ii) incorporated in a single semiconductor package; (iii) incorporated in the same module; or (iv) incorporated in / on the same printed circuit board.

[0163] The use of the phrase “grounding” in the foregoing description includes at least one of chassis grounding, wire grounding, floating grounding, virtual grounding, digital grounding, common grounding, or any other form of grounding connection applicable to or suited to the teachings of this specification. As used herein, “approximately” and “about” modify their subject / value to identify the potential for variation that may occur in real-world applications. For example, “approximately” and “about” may modify dimensions that may be imprecise due to at least one of manufacturing tolerances or other real-world defects. Unless otherwise stated, “about” or “approximately” preceding a value means + / -10% of the stated value, or, if the value is zero, a reasonable range of values ​​around zero.

[0164] Within the scope of the claims, modifications are possible in the described examples, and other examples are possible as well.

[0165] As can be understood from the foregoing, example systems, apparatuses, articles, and methods have been described to provide thermal avalanche protection with lower temperature stress without sacrificing the normal operating temperature range. The described systems, apparatuses, articles, and methods set thermal fault conditions and regulate the die temperature to a lower average temperature. For example, when the die junction temperature is within physical limits (e.g., 170°C) but above the normal operating range (e.g., -40°C to 150°C), the described examples initially engage in thermal regulation. Once a fault is detected and persisted, the examples described herein lower the sensing threshold to allow the controlled switch to maintain high fault stress for an extended period. Therefore, the examples described herein allow devices to achieve higher avalanche current capabilities.

[0166] Compared to other methods, the described systems, apparatus, articles, and methods improve the efficiency of using computing devices by increasing the amount of avalanche current that the computing device can withstand and reducing the area consumed on the chip. For example, by adjusting the device temperature as described herein, the device can conduct avalanche currents up to 3 mA for up to 60 seconds, while other methods support avalanche currents less than 1 mA. Furthermore, other methods require series relays or current-limiting resistors, which are physically three to four times larger than those in the described examples to withstand Hi-Pot test conditions. The described systems, apparatus, articles, and methods also relate to one or more improvements in the operation of machines, such as computers or other electronic, electromechanical, or mechanical devices.

Claims

1. An apparatus comprising: The first transistor has a control terminal, a first terminal adapted to be coupled to a first resistor, and a second terminal adapted to be coupled to a second resistor; The second transistor has a control terminal, a first terminal, and a second terminal, the control terminal being adapted to be coupled to a ground terminal, and the first terminal being coupled to the first terminal of the first transistor; A driver having a supply terminal, an input, and an output, the supply terminal being coupled to a second terminal of a second transistor, and the output being coupled to a control terminal of a first transistor; and A temperature-based control circuit having a supply terminal coupled to the second terminal of the second transistor and an output coupled to the input of the driver, the temperature-based control circuit being capable of: Monitor the temperature sensor to determine the measured temperature that indicates the temperature of the first transistor; In response to the measured temperature being greater than or equal to a fault threshold, a first signal is provided to the driver, the driver controlling the first transistor in response to the first signal; In response to the measured temperature being less than a lower threshold, a second signal is provided to the driver, which controls the first transistor in response to the second signal; and In response to the measured temperature being greater than or equal to an upper threshold, a third signal is provided to the driver, which controls the first transistor in response to the third signal, wherein the upper threshold is less than the fault threshold.

2. The device according to claim 1, wherein the temperature-based control circuit is capable of: In response to the measured temperature being greater than or equal to the fault threshold, a fault state is set; and In response to the measured temperature being less than a fault clearing threshold, the fault state is cleared, wherein the fault clearing threshold is less than the lower limit threshold.

3. The device of claim 2, wherein the temperature-based control circuit is capable of determining whether the measured temperature is less than the fault clearing threshold in response to the measured temperature not being greater than or equal to the upper limit threshold.

4. The device according to claim 2, wherein the fault state is used to: Indicates that the first transistor is in breakdown operation mode; and Unless the measured temperature is greater than or equal to the fault threshold, the temperature-based control circuit is prevented from providing a fourth signal to the driver, which controls the first transistor in response to the fourth signal.

5. The device of claim 1, wherein a measured temperature greater than or equal to the fault threshold indicates that the first transistor is in a breakdown operation mode, and the temperature-based control circuit is capable of: The first signal is provided to the driver, which controls the first transistor to dissipate heat in response to the first signal; and In response to the measured temperature being less than the lower threshold, a fourth signal is provided to the driver, the driver controlling the first transistor in response to the fourth signal to allow the first transistor to return to the breakdown operation mode when the voltage across the integrated circuit is at a breakdown level, the first transistor being packaged in the integrated circuit.

6. The device of claim 1, wherein the temperature-based control circuit is capable of providing the first signal to the driver, the driver being configured to control the first transistor in response to the first signal to adjust the voltage across the integrated circuit from a breakdown level to a supply level of the temperature-based control circuit and the driver, the first transistor being packaged in the integrated circuit.

7. The device of claim 1, wherein the temperature corresponds to the junction temperature of the first transistor.

8. A method comprising: The temperature of the indicator transistor is determined by using a temperature-based control circuit. In response to the measured temperature being greater than or equal to a fault threshold, the temperature-based control circuit provides a first signal to the driver, the driver controlling the transistor in response to the first signal; In response to the measured temperature being less than a lower threshold, a second signal is provided to the driver using the temperature-based control circuit, the driver controlling the transistor in response to the second signal; and In response to the measured temperature being greater than or equal to an upper threshold, a third signal is provided to the driver using the temperature-based control circuit, the driver controlling the transistor in response to the third signal, the upper threshold being less than the fault threshold.

9. The method of claim 8, comprising: In response to the measured temperature being greater than or equal to the fault threshold, a fault state is set; and In response to the measured temperature being less than a fault clearing threshold, the fault state is cleared, wherein the fault clearing threshold is less than the lower limit threshold.

10. The method of claim 9, further comprising: determining whether the measured temperature is less than the fault clearing threshold in response to the measured temperature not being greater than or equal to the upper limit threshold.

11. The method of claim 9, wherein the fault state is used to: Indicates that the transistor is in a breakdown operation mode; and Unless the measured temperature is greater than or equal to the fault threshold, the temperature-based control circuit is prevented from providing a fourth signal to the driver, which controls the transistor in response to the fourth signal.

12. The method of claim 8, wherein the measured temperature being greater than or equal to the fault threshold indicates that the transistor is in a breakdown operating mode, and the method comprises: The first signal is provided to the driver, which controls the transistor to dissipate heat in response to the first signal; and In response to the measured temperature being less than the lower threshold, a fourth signal is provided to the driver, which controls the transistor in response to the fourth signal to allow the transistor to return to the breakdown operating mode when the voltage across the integrated circuit is at a breakdown level, the transistor being packaged in the integrated circuit.

13. The method of claim 8, further comprising: providing the first signal to the driver, the driver being configured to control the transistor in response to the first signal to adjust the voltage across the integrated circuit from a breakdown level to a supply level of the temperature-based control circuit and the driver, the transistor being packaged in the integrated circuit.

14. The method of claim 8, wherein the temperature corresponds to the junction temperature of the transistor.

15. A non-transitory computer-readable medium comprising instructions that cause at least one programmable circuit to perform the following operations: Monitor the temperature sensor to determine the measured temperature that indicates the temperature of the transistor; In response to the measured temperature being greater than or equal to a fault threshold, a first signal is provided to the driver, the driver controlling the transistor in response to the first signal; In response to the measured temperature being less than a lower threshold, a second signal is provided to the driver, which controls the transistor in response to the second signal; and In response to the measured temperature being greater than or equal to an upper limit threshold, a third signal is provided to the driver, which controls the transistor in response to the third signal, wherein the upper limit threshold is less than the fault threshold.

16. The non-transitory computer-readable medium of claim 15, wherein the instructions cause one or more of the at least one programmable circuit to perform the following operations: In response to the measured temperature being greater than or equal to the fault threshold, a fault state is set; and In response to the measured temperature being less than a fault clearing threshold, the fault state is cleared, wherein the fault clearing threshold is less than the lower limit threshold.

17. The non-transitory computer-readable medium of claim 16, wherein the instructions cause one or more of the at least one programmable circuit to determine whether the measured temperature is less than the clear fault threshold in response to the measured temperature not being greater than or equal to the upper limit threshold.

18. The non-transitory computer-readable medium of claim 16, wherein the fault state is used to: Indicates that the transistor is in a breakdown operation mode; and Unless the measured temperature is greater than or equal to the fault threshold, one or more of the at least one programmable circuits are prevented from providing a fourth signal to the driver, which controls the transistor in response to the fourth signal.

19. The non-transitory computer-readable medium of claim 15, wherein the measured temperature being greater than or equal to the fault threshold indicates that the transistor is in a breakdown operating mode, and wherein the instructions cause one or more of the at least one programmable circuit to perform the following operations: The first signal is provided to the driver, which controls the transistor to dissipate heat in response to the first signal; and In response to the measured temperature being less than the lower threshold, a fourth signal is provided to the driver, which controls the transistor in response to the fourth signal to allow the transistor to return to the breakdown operating mode when the voltage across the integrated circuit is at a breakdown level, the transistor being packaged in the integrated circuit.

20. The non-transitory computer-readable medium of claim 15, wherein the instructions cause one or more of the at least one programmable circuit to provide the first signal to the driver, the driver being configured to control the transistor in response to the first signal to adjust the voltage across the integrated circuit from a breakdown level to a supply level of the driver, the transistor being packaged in the integrated circuit.

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