Film thickness adjusting device for semiconductor deposition apparatus

Abstract

The present invention relates to a film thickness adjusting apparatus of a semiconductor deposition apparatus, which can include an adapter connected to a process gas supply flow path and an inert gas supply flow path and having a discharge port, a showerhead connected to the discharge port of the adapter, and a spray tube disposed to pass through the discharge port of the adapter, an upper end connected to the process gas supply flow path, and a lower end inserted into an inside of an inlet of the showerhead to be positioned close to a baffle plate of the showerhead.

Description

Technical Field

[0001] The present invention relates to a thin film thickness adjustment device for a semiconductor deposition apparatus, and more specifically, a thin film thickness adjustment device for a semiconductor deposition apparatus capable of adjusting the thickness of a thin film deposited at the center of a wafer. Background Technology

[0002] In order to manufacture tiny components inside a semiconductor chip, the process of repeatedly depositing a thin film on the surface of a silicon wafer and then removing (etching) the unnecessary parts is repeated, and a cleaning process is performed to remove the residues generated by the results of each process.

[0003] The semiconductor deposition equipment includes a vacuum chamber and a gas supply device. The vacuum chamber is used to deposit wafers for the process. The gas supply device is connected to the vacuum chamber to supply various gases (process gases, cleaning gases, inert gases, etc.) required for the process. It may also include an RPS (remote plasma source), which can generate a plasma source outside the chamber for plasma cleaning.

[0004] The gas is supplied to the interior space of the vacuum chamber through a nozzle located on the upper side of the vacuum chamber.

[0005] The wafer is located near the nozzle during the process, and the nozzle supplies process gas evenly to the entire area of ​​the wafer, thereby forming a thin film of uniform thickness on the wafer surface.

[0006] However, forming a film of uniform thickness across the entire wafer is very difficult. This is because film deposition is highly sensitive to subtle changes in process conditions, resulting in the formation of film thicknesses that vary along the radial direction of the wafer. In particular, it is common for films to be thicker in the central region of the wafer, where the concentration of process gases is relatively high, than in the middle or side regions, and there is a tendency for the film thickness in the middle region to change in tandem with that in the central region.

[0007] Therefore, the technical necessity of controlling the film thickness in the central portion of the wafer to deposit a uniform film is proposed.

[0008] Prior art refers to technical information that the inventor possesses in order to derive this invention, or that is obtained in the process of deriving this invention, and is not necessarily publicly known technology that was disclosed to the general public before the application for this invention.

[0009] (Existing technical literature)

[0010] (Patent Documents)

[0011] (Patent Document 1) Korean Patent Publication No. 10-2024-0104846 (Published on July 5, 2024) Summary of the Invention

[0012] The problem to be solved

[0013] In order to solve the above problems, the present invention aims to provide a thin film thickness adjustment device for semiconductor deposition equipment, which can more precisely adjust the thin film thickness of the wafer during the deposition process.

[0014] The problems to be solved by the present invention are not limited to those mentioned above. Those skilled in the art to which this invention pertains can clearly understand from the following description other problems not mentioned.

[0015] Problem-solving methods

[0016] According to an embodiment of the present invention, a thin film thickness adjustment device for a semiconductor deposition apparatus includes: an adapter connected to a process gas supply path and an inert gas supply path, and having an exhaust port; a nozzle connected to the exhaust port of the adapter; and an injection tube configured to pass through the exhaust port of the adapter, with its upper end connected to the process gas supply path and its lower end inserted into the inlet of the nozzle to be located near the baffle plate of the nozzle.

[0017] According to one embodiment, the spray pipe is positioned such that its lower end is within a range of 10 mm to 25 mm from the surface of the barrier plate.

[0018] According to one embodiment, the process gas supply path is connected to the process gas supply source and is equipped with a first flow control valve to control the flow rate of the process gas.

[0019] According to one embodiment, the inert gas supply path is connected to an inert gas supply source and a second flow control valve is provided to control the flow rate of the inert gas.

[0020] According to one embodiment, the injection pipe has a bottleneck portion formed on the lower inner side, a first through hole formed at the center of the bottleneck portion, and a plurality of second through holes formed on the side portion in the radial direction.

[0021] According to one embodiment, a chamfer is formed on the inner diameter of the lower end of the injection pipe.

[0022] According to one embodiment, the injection tube is formed with an inner diameter that gradually decreases from the middle portion downwards.

[0023] According to one embodiment, an insulating heat shield is provided between the adapter and the nozzle.

[0024] According to one embodiment, a vortex stirrer is provided on the adapter, the vortex stirrer being a nozzle that is tangentially connected to the process gas supply flow path in the internal flow path space.

[0025] The effects of the invention

[0026] As described above, the thin film thickness adjustment device of the semiconductor deposition apparatus according to the present invention allows for more precise adjustment of the thin film thickness of the wafer during the deposition process, thereby improving the uniformity of the thin film thickness of the entire wafer.

[0027] The effects of the present invention are not limited to those mentioned above. Those skilled in the art to which this invention pertains can clearly understand other effects not mentioned from the following description. Attached Figure Description

[0028] Figure 1 This is a structural diagram of a thin film thickness adjustment device for a semiconductor deposition apparatus according to an embodiment of the present invention.

[0029] Figure 2 It is shown Figure 1 A diagram showing a comparative example of the structure.

[0030] Figure 3 It is shown in the Figure 1 The graph shows the change in film thickness at the center of the wafer during film deposition, depending on the flow rate of the inert gas.

[0031] Figure 4 It is shown in the Figure 2 A graph showing the change in film thickness at the center of the wafer as a function of inert gas flow rate during film deposition.

[0032] Figures 5 to 8 Various embodiments of the present invention are shown.

[0033] Figure 5 These are cross-sectional and bottom views of the case where the injection pipe is a simple straight pipe.

[0034] Figure 6 These are cross-sectional and bottom views showing the formation of a bottleneck section on the lower inner side of the injection pipe.

[0035] Figure 7 These are cross-sectional and bottom views showing the formation of a chamfer at the lower end of the injection pipe.

[0036] Figure 8 These are cross-sectional and bottom views showing the gradually decreasing inner diameter of the injection pipe.

[0037] (Explanation of reference numerals in the attached diagram)

[0038] 10: Adapter 10a: Discharge port

[0039] 11: Inert gas supply path; 20: Insulating heat shield.

[0040] 21: Flow path 30: Nozzle

[0041] 31: Gas box 31a: Inlet

[0042] 31b: Flow path; 32: Barrier plate

[0043] 32a: Injection hole; 33: End plate

[0044] 33a: Injection hole; 40: Connecting flow path

[0045] 50: Vortex mixer; 51: Process gas supply path

[0046] 51a: Nozzle outlet; 60: Injection pipe

[0047] 61: Bottleneck section; 62: First through hole

[0048] 63: Second through hole; 64: Chamfered edge

[0049] 70: Mixing space; 100: Process gas supply source

[0050] 110: First flow control valve; 200: Cleaning gas supply source

[0051] 210: Second flow control valve; 300: RPS

[0052] 400: Inert gas supply source Detailed Implementation

[0053] In this invention, the accompanying drawings may be exaggerated to facilitate differentiation from, clarity of, and mastery of the prior art. Furthermore, the terminology used below is defined in consideration of the functionality within this invention and may vary depending on the intent or convention of the user or operator; therefore, these terms should be defined based on the technical content of the entire specification. On the other hand, the embodiments are merely exemplary examples of structural elements presented within the scope of this invention and do not limit the scope of the invention, which should be interpreted based on the technical concept presented in the entire specification.

[0054] In the full text of the specification, when a structure "includes" another structure, unless specifically opposed, it means that other structures may also be included, without excluding the remaining structures.

[0055] Furthermore, when one structure is "connected," "linked," or "combined" with another structure, it implies a situation of "direct connection," "direct linking," or "direct combination," and it can also mean "connected with other structures in between," "linked with other structures in between," or "combined with other structures in between." Conversely, when one structure is "directly connected," "directly linked," or "directly combined" with another structure, it should be understood that there are no other structures in between.

[0056] Furthermore, when directional terms such as “front,” “back,” “up,” “down,” “left,” “right,” “one end,” “the other end,” and “both ends” are used, they are used exemplarily in relation to the direction of the disclosed diagram and therefore cannot be interpreted restrictively. When terms such as “first” and “second” are used, they are terms used to distinguish the various structures and cannot be interpreted restrictively.

[0057] To more clearly illustrate the features of the embodiments of the present invention, detailed descriptions of matters well known to those skilled in the art to which the following embodiments pertain are omitted. Furthermore, detailed descriptions of portions of the figures unrelated to the description of the embodiments are omitted.

[0058] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0059] Figure 1 This is a structural diagram of a thin film thickness adjustment device for a semiconductor deposition apparatus according to an embodiment of the present invention; Figure 2 It is shown Figure 1 A diagram showing a comparative example of the structure; Figure 3 It is shown in the Figure 1 A graph showing the change in film thickness at the center of the wafer during film deposition based on the inert gas flow rate; Figure 4 It is shown in the Figure 2 A graph showing the change in film thickness at the center of the wafer as a function of inert gas flow rate during film deposition. Figures 5 to 8 Various embodiments of the present invention are shown; Figure 5 These are cross-sectional and bottom views of the case where the injection pipe is a simple straight pipe;

[0060] Figure 6 These are cross-sectional and bottom views showing the formation of a bottleneck section on the lower inner side of the injection pipe. Figure 7 These are cross-sectional and bottom views showing the formation of a chamfer at the lower end of the injection pipe. Figure 8 These are cross-sectional and bottom views showing the gradually decreasing inner diameter of the injection pipe.

[0061] Reference Figures 1 to 8According to an embodiment of the present invention, the thin film thickness adjustment device of the semiconductor deposition apparatus includes an adapter 10, a nozzle 30, and a spray pipe 60.

[0062] According to one embodiment, the adapter 10 is connected to the process gas supply path 51 and the inert gas supply path 11, and has a discharge port 10a.

[0063] According to one embodiment, the adapter 10 is connected to the RPS (Remote Plasma Source) 300 and is the required path adapter for supplying cleaning gas into the chamber.

[0064] According to one embodiment, a cleaning gas supply source 200 is connected to the RPS 300. The cleaning gas supplied from the cleaning gas supply source 200 is converted into a plasma state in the RPS 300, and the plasma-generated cleaning gas can be supplied to the interior of the chamber through the flow path connecting the adapter 10 to the RPS 300 and the adapter 10.

[0065] According to one embodiment, the flow path connecting the adapter 10 and the RPS 300, i.e., the cleaning gas supply flow path, can be connected to the inert gas supply source 400 used as the purging gas. Therefore, the inert gas and the cleaning gas can be supplied to the interior of the chamber through the same path. That is, the cleaning gas supply flow path can also serve the function of the inert gas supply flow path 11 that supplies inert gas to the chamber.

[0066] According to one embodiment, the inert gas may include argon (Ar), nitrogen (N2), etc.

[0067] According to one embodiment, the adapter 10 is connected to the process gas supply source 100 via the process gas supply path 51.

[0068] According to one embodiment, as described above, the process gas supply path 51 is a first flow control valve 110 connected to the process gas supply source 100 and configured to control the flow rate of the process gas.

[0069] According to one embodiment, adjusting the opening of the first flow control valve 110 can adjust the flow rate of the process gas discharged from the injection pipe 60. Thus, by adjusting the flow rate of the process gas relative to the flow rate of the inert gas (the flow rate flowing along the connection flow path 40, which will be described below), the film thickness at the center of the wafer can be adjusted.

[0070] According to one embodiment, the inert gas supply path 11 is connected to the inert gas supply source 400 and may be equipped with a second flow control valve 210 to control the flow rate of the inert gas.

[0071] According to one embodiment, adjusting the opening of the second flow control valve 210 can adjust the flow rate of the inert gas flowing along the connecting flow path 40, which is formed to surround the outer periphery of the injection pipe 60. Thus, by adjusting the flow rate of the inert gas relative to the flow rate of the process gas, the film thickness at the center of the wafer can be adjusted.

[0072] According to one embodiment, a flow path formed by a right-angle bend is formed inside the adapter 10. In the flow path, the horizontal portion serves as an inlet flow path, connecting to the inert gas supply flow path 11, and the vertical portion is opened through the bottom of the adapter 10 to form the outlet 10a.

[0073] According to one embodiment, a vortex stirrer 50 is provided on the adapter 10, the vortex stirrer 50 being a nozzle 51a that is tangentially connected to the process gas supply flow path 51 in the internal flow path space.

[0074] According to one embodiment, the vortex stirrer 50 is connected to the inlet of the injection pipe 60 and the process gas supply path 51.

[0075] According to one embodiment, the vortex stirrer 50 forms an outlet 51a of the process gas supply flow path 51 in a tangential direction in the internal flow path space, and the process gas discharged from the outlet 51a rotates and falls along the circumferential surface of the internal flow path space to form a vortex.

[0076] According to one embodiment, the vortex affects the mixing of process gas and inert gas supplied along the outer periphery of the jet pipe 60 in the space at the lower end of the jet pipe 60, i.e., the mixing space 70, thereby affecting the film thickness at the center of the wafer. Accordingly, the vortex stirrer 50 is provided as needed, and can therefore be used to adjust the film thickness at the center of the wafer.

[0077] According to one embodiment, the adapter 10 and the nozzle 30 are provided with an insulating heat shield 20 between them.

[0078] According to one embodiment, the insulating heat insulation body 20 serves to electrically insulate the nozzle 30 from the RPS 300 side component and also serves to block heat conduction (the adapter 10 is also a component electrically connected to the RPS 300).

[0079] According to one embodiment, a flow path 21 is formed inside the insulating heat insulation body 20, which runs through the vertical direction.

[0080] According to one embodiment, the nozzle 30 is a structure connected to the discharge port 10a of the adapter 10.

[0081] As described above, since the insulating heat insulation body 20 is provided between the adapter 10 and the nozzle 30, more precisely, the nozzle 30 is connected to the discharge port 10a of the adapter 10 through the insulating heat insulation body 20.

[0082] According to one embodiment, the nozzle 30 includes: an air chamber 31 with a circular tube-shaped inlet 31a formed at its center; an end plate 33 installed at the lower end of the air chamber 31 to form a disc-shaped space inside the air chamber 31; and a baffle plate 32 disposed between the air chamber 31 and the end plate 33. The baffle plate 32 and the end plate 33 are components that diffuse all the gas flowing into the air chamber 31 in the radial direction to uniformly supply gas over the entire area of ​​the wafer.

[0083] According to one embodiment, the inlet 31a is connected to the lower part of the insulating heat insulation body 20. A flow path 31b is formed inside the inlet 31a, and the flow path 31b is connected to the outlet 10a of the adapter 10 and the flow path 21 of the insulating heat insulation body 20. The outlet 10a, the flow path 21, and the flow path 31b all have the same inner diameter and form a vertically connected connecting flow path 40.

[0084] According to one embodiment, a plurality of injection holes 32a, 33a are formed on the barrier plate 32 and the end plate 33 for gas to pass through and be injected downward.

[0085] According to one embodiment, the gas entering the inlet 31a diffuses into the entire internal space of the nozzle 30 through the barrier plate 32 and the end plate 33, thereby being uniformly sprayed onto the entire area of ​​the wafer.

[0086] According to one embodiment, the injection pipe 60 is configured to pass through the discharge port 10a of the adapter 10, with its upper end connected to the process gas supply path 51, and its lower end inserted into the inlet 31a of the nozzle 30 to be located near the baffle plate 32 of the nozzle 30.

[0087] According to one embodiment, the spray pipe 60 is configured to pass through the connecting flow path 40. That is, the spray pipe 60 is configured to vertically pass through the discharge port 10a of the adapter 10, the flow path 21 of the insulating heat shield 20, and the flow path 31b of the inlet 31a of the nozzle 30.

[0088] According to one embodiment, the jet pipe 60 is configured such that, when the vortex stirrer 50 is provided, the upper end of the adapter 10 passes through it and can be connected to the lower end of the vortex stirrer 50.

[0089] According to one embodiment, the injection pipe 60 guides the process gas flowing in from the upper end downwards to discharge it to the lower end, thus enabling the process gas to be supplied in a pure state unmixed with inert gas until it reaches the mixing space 70 adjacent to the barrier plate 32.

[0090] According to one embodiment, inert gas is supplied through the connecting flow path 40, i.e., the outer flow path surrounding the injection pipe 60. The inert gas can also be supplied to the mixing space 70 in an unmixed state with the process gas.

[0091] According to one embodiment, the inert gas supplied through the connecting flow path 40 forms an inert gas curtain surrounding the lower end periphery of the injection pipe 60. The inert gas curtain surrounds the process gas discharged from the injection pipe 60, so that the process gas can be concentrated on the central region of the wafer.

[0092] Figure 3 It is shown that, according to the above Figure 1 The graph shows the change in thin film thickness of the wafer caused by the flow rate of the inert gas supplied through the connection flow path 40 under the specified condition. Argon was used as the inert gas.

[0093] According to one embodiment, in Figure 3 In the graph, (a) represents the case where the inert gas flow rate is 0 sccm, (b) represents the case where the inert gas flow rate is 300 sccm, and (c) represents the case where the inert gas flow rate is 600 sccm; the vertical axis represents the thickness of the thin film, and the horizontal axis represents the position measured according to the diameter of the wafer. That is, in the graph, the two ends represent the two ends of the wafer in the diameter direction, and the center represents the center of the wafer.

[0094] According to one embodiment, by Figure 3 It can be confirmed that the greater the flow rate of inert gas supplied to the connection flow path 40, the greater the tendency to increase the film thickness in the center of the wafer.

[0095] On the other hand, as described Figure 2 , Figure 4 This is a graph showing the change in film thickness at the center of the wafer based on the flow rate of the inert gas, assuming the lower end of the injection pipe 60 is located inside the insulating heat shield 20 rather than close to the baffle plate 32 of the nozzle 30. Argon was used as the inert gas.

[0096] According to one embodiment, in Figure 4In the figure, (a) is the case where the inert gas flow rate is 0 sccm, (b) is the case where the inert gas flow rate is 245 sccm, and (c) is the case where the inert gas flow rate is 1000 sccm. The vertical axis represents the thickness of the film, and the horizontal axis represents the position measured according to the diameter of the wafer.

[0097] According to one embodiment, by Figure 4 It can be confirmed that the flow rate of inert gas supplied to the connecting flow path 40 when the lower end of the injection pipe 60 is not close to the barrier plate 32 is independent of the thickness of the central film.

[0098] That is, as mentioned above, from Figure 3 and Figure 4 As can be seen, by positioning the lower end of the jet pipe 60 close to the baffle plate 32 of the nozzle 30 and adjusting the amount of inert gas supplied (through the connecting flow path 40) along the outer peripheral surface of the jet pipe 60, the thickness of the thin film formed at the center of the wafer can be adjusted.

[0099] According to one embodiment, preferably, the lower end of the spray pipe 60 is located within a range of 10 mm or more and less than 25 mm from the surface of the barrier plate 32.

[0100] According to one embodiment, when the lower end of the jet pipe 60 is located within 10 mm of the surface of the barrier plate 32, the gap between it and the barrier plate 32 is too narrow. Therefore, while the process gas is being emitted at high speed through this gap, it passes through the lower end of the inert gas curtain formed around the lower end of the jet pipe 60 and easily diffuses along the top of the barrier plate 32. Consequently, the isolation effect of the inert gas curtain is eliminated, and the process gas cannot be concentrated on the center of the wafer.

[0101] According to one embodiment, if the lower end of the jet pipe 60 is more than 25 mm away from the surface of the barrier plate 32, the size of the mixing space 70 is excessively expanded. As a result, the process gas and the inert gas mix smoothly, which is why it is impossible to concentrate a large amount of process gas on the center of the wafer.

[0102] According to one embodiment, even if the amount of inert gas supplied through the connection flow path 40 is adjusted, the thickness of the thin film formed at the center of the wafer cannot be adjusted.

[0103] On the other hand, the injection pipe 60 adjusts the emission pattern of the process gas to regulate its interaction with the inert gas curtain, thereby finely adjusting the action mode of the process gas acting on the center of the wafer. This can be achieved as follows: Figures 5 to 8 Various modifications and implementations were carried out.

[0104] According to one embodiment, as with Figure 1 The same embodiment, Figure 5 This refers to the case where the injection pipe 60 is entirely composed of a simple straight circular tube. In the mixing space 70, the process gas emitted from the injection pipe 60 and the inert gas descending along the connecting flow path 40 have a nearly straight downward flow direction. Therefore, a strong curtain effect of the inert gas flow occurs, resulting in a more concentrated effect of the process gas in the center of the wafer and a portion of the middle part in contact with the center compared to other parts of the wafer.

[0105] According to one embodiment, such as Figure 6 As shown, a bottleneck portion 61 is formed on the inner side of the lower part of the injection pipe 60, a first through hole 62 is formed at the center of the bottleneck portion 61, and a plurality of second through holes 63 can be formed on the side in the radial direction.

[0106] According to one embodiment, the bottleneck portion 61 has a horizontal plate shape and a first through hole 62 is formed at its center. The first through hole 62 is a simple circular hole.

[0107] According to one embodiment, the second through hole 63 is a hole that contacts the circumference of the bottleneck portion 61, the outer part in the radial direction is formed into an arc shape that is the same as the inner circumferential surface of the injection pipe 60, and the inner part in the radial direction is formed into an arc shape with a curvature smaller than that of the outer part in the radial direction.

[0108] According to one embodiment, a plurality of second through holes 63 may be formed at equal intervals along the circumferential direction of the bottleneck portion 61.

[0109] exist Figure 6 In the illustrated embodiment, the process gas discharged through the first through-hole 62 is more concentrated in the very center of the wafer, while the process gas discharged through the second through-hole 63 pushes the flow of inert gas outward in the radial direction and diffuses, thus further expanding the range of the center.

[0110] Therefore, compared to Figure 5 In one embodiment, a relatively thicker film is formed in the very center of the wafer, and the region of the center where the film thickness is relatively thicker than that of the middle portion can be further expanded.

[0111] According to one embodiment, such as Figure 7 As shown, a chamfer 64 can be formed on the inner diameter of the lower end of the spray pipe 60.

[0112] According to one embodiment, the chamfer 64 is formed such that the inner diameter corner of the lower end of the injection pipe 60 is chamfered into an inclined plane.

[0113] According to one embodiment, the chamfer 64 serves as a guide surface for the flow of process gas along the inner diameter surface of the injection pipe 60, thereby allowing the process gas to flow more smoothly than... Figure 5 The embodiment more forcefully expands while pushing the inert gas flow descending along the connecting flow path 40 outwards. Therefore, it is comparable to Figure 5 The embodiment further expands the central region of the wafer into a relatively thicker thin film than other parts.

[0114] According to one embodiment, such as Figure 8 As shown, the injection pipe 60 can be formed with an inner diameter that gradually narrows from the middle downwards. That is, the injection pipe 60 can be formed with a flow path cross-sectional area that gradually decreases from the middle height downwards.

[0115] In this embodiment, comparable Figure 5 The embodiment further reduces the area of ​​the central portion where the thick film is formed, and the range of the intermediate region where the film is formed is relatively thinner than the central portion can be expanded towards the center of the wafer.

[0116] According to one embodiment, the shape and structure of the lower end of the injection pipe 60 are changed in various ways to alter the pattern of the process gas discharge flow, thereby allowing for more precise adjustment of the area where a relatively thicker film is formed compared to other parts.

[0117] According to one embodiment, by adjusting the flow rate of the inert gas discharged through the connecting flow path 40 while the lower end of the injection pipe 60 has a specific shape and structure, the range of the region where a thick film is formed can be adjusted. As described above, the flow rate of the inert gas can be adjusted by adjusting the opening of the second flow control valve 210.

[0118] According to one embodiment, the flow rate of the process gas discharged from the injection pipe 60 can be adjusted, thereby adjusting the range of the region where the thick film is formed. The flow rate of the process gas can be adjusted by adjusting the opening of the first flow control valve 110.

[0119] As described above, the thin film thickness adjustment device of the semiconductor deposition apparatus according to the present invention is such that the lower end of the jet tube is positioned close to the baffle plate near the nozzle, and the flow rates of the process gas and the inert gas are adjusted, thereby adjusting the thickness of the thin film formed in the central part of the wafer and the range of the central region. Furthermore, the lower end of the jet tube can be formed into various shapes and structures, thereby allowing for more precise adjustment of the thin film formation state in the central part of the wafer.

[0120] Therefore, not only can the film thickness in a specific area of ​​the wafer be adjusted according to requirements, but a film of uniform thickness can also be formed throughout the entire wafer.

[0121] As described above, the present invention has been illustrated with reference to the embodiments shown in the figures. However, it should be understood that these are merely exemplary, and various modifications and equivalent embodiments are possible based on common knowledge in the art to which this invention pertains. Therefore, the true scope of protection of this invention is based on the appended claims and should be determined according to the specific content of the invention described above.

[0122] Industrial applicability

[0123] This invention relates to a thin film thickness adjustment device for a semiconductor deposition apparatus, which can be used in industries related to thin film deposition.

Claims

1. A thin film thickness adjustment device for a semiconductor deposition apparatus, comprising: An adapter connects to the process gas supply path and the inert gas supply path, and has a discharge port; The nozzle is connected to the outlet of the adapter; and The injection pipe is configured to pass through the outlet of the adapter, with its upper end connected to the process gas supply path and its lower end inserted into the inlet of the nozzle to be located near the baffle plate of the nozzle.

2. The thin film thickness adjustment device for the semiconductor deposition equipment according to claim 1, characterized in that, The spray pipe is positioned such that its lower end is within a range of 10 mm to 25 mm from the surface of the barrier plate.

3. The thin film thickness adjustment device for the semiconductor deposition equipment according to claim 1, characterized in that, The process gas supply path is connected to the process gas supply source and is equipped with a first flow control valve to control the flow rate of the process gas.

4. The thin film thickness adjustment device for the semiconductor deposition equipment according to claim 1, characterized in that, The inert gas supply path is connected to the inert gas supply source and is equipped with a second flow control valve to control the flow rate of the inert gas.

5. The thin film thickness adjustment device for the semiconductor deposition equipment according to claim 1, characterized in that, The injection pipe has a bottleneck section formed on the lower inner side, a first through hole formed at the center of the bottleneck section, and multiple second through holes formed on the side in the radial direction.

6. The thin film thickness adjustment device for a semiconductor deposition apparatus according to claim 1, characterized in that, A chamfer is formed on the inner diameter of the lower end of the spray pipe.

7. The thin film thickness adjustment device for a semiconductor deposition apparatus according to claim 1, characterized in that, The injection pipe is shaped such that its inner diameter gradually decreases from the middle section downwards.

8. The thin film thickness adjustment device for the semiconductor deposition equipment according to claim 1, characterized in that, An insulating heat shield is provided between the adapter and the nozzle.

9. The thin film thickness adjustment device for a semiconductor deposition apparatus according to claim 1, characterized in that, A vortex mixer is installed on the adapter. The vortex mixer is an outlet that is tangentially connected to the process gas supply flow path in the internal flow path space.

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