Vacuum crystal growing apparatus with improved crystal growth stability

Abstract

The application discloses a vacuum crystal growth equipment capable of improving crystal growth stability, which comprises a vacuum cavity, a top cover, a constant-temperature bottom plate, a door plate and auxiliary equipment, the top of the vacuum cavity is sealingly connected with the top cover, and the bottom of the vacuum cavity is sealingly connected with the constant-temperature bottom plate, one side of the vacuum cavity is provided with an inlet and outlet, the internal space of the top cover is a taper surface structure with a cross-sectional area gradually decreasing from bottom to top, a plurality of interfaces are formed in the top cover, the inclination angle of the side wall of the top cover is between 45 DEG and 60 DEG, the interface formed in the top of the top cover is chamfered with the side wall in the top cover, the constant-temperature bottom plate is connected with a constant-temperature device, a flow channel with a spiral structure or a serpentine structure is preformed in the constant-temperature bottom plate, the inlet and outlet of the flow channel are connected with a water tank through circulating water pipes respectively, the door plate is sealingly abutted against the outer side wall of the inlet and outlet, a substrate holder is fixedly connected to the inner side of the door plate, and the bottom of the substrate holder is in contact with the top of the constant-temperature bottom plate after penetrating through the inlet and outlet. The application can improve the crystal growth stability and airflow guiding effect and reduce crystal defects.

Description

Technical Field

[0001] This invention relates to the field of crystal growth equipment technology, and in particular to a vacuum crystallization device for improving the stability of crystal growth. Background Technology

[0002] Vacuum crystallization refers to the physical crystallization process in which the precursor system is supersaturated by the rapid physical evaporation of solvent in a vacuum or low-pressure environment, which promotes the in-situ nucleation of solute components and their orientation along the crystal lattice to form crystals or crystal films.

[0003] However, existing vacuum crystallization equipment has the following shortcomings: 1. Traditional equipment often uses built-in temperature control elements or direct cooling on the constant-temperature base plate, which is a point-like or localized temperature control, making it difficult to achieve uniform heat transfer over a surface. This results in significant temperature differences between different batches and regions on the substrate holder and substrate. The wet film experiences large temperature fluctuations during nucleation-crystallization-growth, leading to internal crystal defects (such as lattice mismatch and dislocations) and affecting the crystal's key optical and electrical properties. 2. The top cover of existing equipment is mostly planar or simple cylindrical, causing turbulent internal airflow during evacuation, which easily generates eddies and localized airflow resistance. This not only increases evacuation energy consumption but also disturbs the crystal growth interface, reducing the stability and yield of crystal growth.

[0004] Therefore, there is an urgent need for a vacuum crystallization device that can achieve uniform temperature control on the bottom surface while optimizing airflow guidance at the top, in order to improve the stability and quality of crystal growth. Summary of the Invention

[0005] The purpose of this invention is to provide a vacuum crystallization device that improves the stability of crystal growth. By combining the uniform temperature control at the bottom surface with the airflow guidance at the top conical surface, the device solves the problems of uneven temperature distribution and airflow disturbance in the prior art, thereby improving the stability of crystal growth and the airflow guidance effect.

[0006] To solve the above-mentioned technical problems, the present invention adopts the following technical solution: This invention discloses a vacuum crystallization apparatus for improving crystal growth stability, comprising a vacuum chamber, a top cover, a constant-temperature base plate, a door panel, and auxiliary equipment. The top cover is fixedly and sealed to the top of the vacuum chamber, and the constant-temperature base plate is fixedly and sealed to the bottom. An inlet / outlet is provided on one side of the vacuum chamber, and the internal space is used for vacuum crystallization. The internal space of the top cover is a conical structure with a cross-sectional area gradually decreasing from bottom to top. Several interfaces are provided on the top cover for sealing connections to the auxiliary equipment. The sidewall inclination angle of the top cover is between 45° and 60°. A chamfer is formed between the interface at the top of the top cover and the internal sidewall of the top cover. A constant-temperature device is externally connected to the constant-temperature base plate to maintain its temperature at a set value. The constant-temperature device includes a water tank equipped with a heating device and a cooling device to maintain the water in the tank at the set temperature. A spiral or serpentine flow channel is pre-set within the constant-temperature base plate. The inlet and outlet are connected to the water tank via circulating water pipes, each equipped with a circulating water pump. The door panel is fixedly and sealed against the outer wall of the inlet and outlet. A substrate holder is fixedly connected to the inner side of the door panel. After passing through the inlet and outlet, the bottom of the substrate holder contacts the top of the constant temperature base plate. A gas equalization port is provided on the side wall of the vacuum chamber. The gas equalization port is connected to a first inert gas input device via a pipe with a valve. The auxiliary equipment includes a vacuum system. The vacuum system is sealed to the interface at the top of the top cover via a vacuum pipe with a valve. An inert gas branch is connected to the vacuum pipe. A second inert gas input device is connected to the inert gas branch. A control valve and a flow meter are provided on the inert gas branch to introduce inert gas into the vacuum pipe during vacuuming, increasing the load on the vacuum system, reducing the effective pumping rate, thereby adjusting the evacuation rate of the vacuum chamber and achieving precise control of different pressure values ​​in the vacuum chamber.

[0007] Furthermore, the vacuum chamber has symmetrical strip tracks on its two inner sidewalls that are perpendicular to the sidewalls where the inlet and outlet are located, and the substrate holder is slidably disposed in the corresponding strip tracks on both sides.

[0008] Furthermore, the door panel includes a vertical plate and two horizontally symmetrically arranged strip sliders. One end of each strip slider is fixed to the vertical plate. The vertical plate is fixedly and sealed to the outer wall of the vacuum cavity or snapped into place. The outer side of each strip slider is slidably connected to a corresponding strip track on the inner wall of the vacuum cavity. A support plate is connected between the two strip sliders. The support plate is used to snap into the substrate holder.

[0009] Furthermore, the vacuum cavity has a rectangular cross-section.

[0010] Furthermore, the interface at the very top of the top cover is a flange structure.

[0011] Furthermore, the vacuum chamber is made of stainless steel or surface-treated aluminum.

[0012] Furthermore, two symmetrical pressure relief ports are provided in the middle of both sides of the vacuum chamber, and pressure relief valves are installed at the pressure relief ports.

[0013] Furthermore, the auxiliary equipment also includes a digital resistance gauge and a camera module. The digital resistance gauge is fixedly and sealed to one of the interfaces on the side wall of the top cover. The digital resistance gauge can display the vacuum level in the vacuum chamber in real time. A transparent plate is fixedly and sealed at the interface on one of the side walls of the top cover. The camera module is arranged on the outside of the transparent plate for acquiring images of the crystal growth process in the vacuum chamber.

[0014] Furthermore, the vacuum system includes a vacuum pump, a vacuum valve, and a vacuum measuring device. The vacuum pump is used to pump the gas pressure inside the vacuum chamber to the vacuum level required for crystal growth. The vacuum valve is used to control the opening and closing of the pipeline between the vacuum chamber and the vacuum pump. The vacuum measuring device is used to monitor the vacuum level inside the vacuum chamber in real time.

[0015] Compared with the prior art, the beneficial technical effects of the present invention are as follows: In the vacuum crystallization equipment for improving crystal growth stability of this invention, the constant-temperature base plate can maintain a constant temperature at a set value, precisely control the temperature at the bottom of the vacuum chamber, and uniformly transfer heat or cold to the substrate, ensuring the consistency of the substrate temperature with the constant-temperature base plate temperature. Simultaneously, the conical structure inside the top cover makes the gas field distribution in the upper and lower regions inside the vacuum chamber more uniform, greatly reducing the probability of crystal defects caused by uneven internal gas field during evacuation, thus improving crystal quality. Furthermore, the reasonable conical design reduces airflow resistance during evacuation, lowering equipment energy consumption and saving production costs. The constant-temperature base plate ensures the stability of the substrate temperature during nucleation-crystallization-growth of the wet film, and the guiding effect of the conical structure inside the top cover reduces the impact of airflow disturbance on… The uniform temperature environment also ensures the consistency of crystal growth rate, making it easier to control the shape and size of the crystal, thereby improving the stability and yield of crystal growth. Furthermore, the vacuum pipeline of this invention is connected to an inert gas branch. When the vacuum pump evacuates the vacuum chamber, inert gas is introduced into the vacuum pipeline through the control valve and flow meter, which is equivalent to increasing the load on the branch and indirectly reducing the effective pumping speed of the pump. This adjusts the evacuation rate of the vacuum chamber. Combined with the coordinated adjustment of the gas inlet, uniform evacuation can be achieved in the vacuum chamber, enabling precise control of different pressure values ​​in the vacuum chamber. This avoids uneven solvent evaporation or film damage on the wet film surface due to excessively fast pumping speed, further optimizing the quality of crystal film formation. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the overall structure of the vacuum crystallization equipment for improving crystal growth stability according to the present invention. Figure 2 This is a schematic diagram of the vacuum chamber in the vacuum crystallization equipment for improving crystal growth stability according to the present invention; Figure 3 This is a schematic diagram of the main structure of the vacuum cavity in the vacuum crystallization equipment for improving crystal growth stability according to the present invention; Figure 4 This is a top view of the top cover structure in the vacuum crystallization equipment for improving crystal growth stability according to the present invention. Figure 5 This is a schematic diagram of the left-hand structure of the top cover in the vacuum crystallization apparatus for improving crystal growth stability according to the present invention; Figure 6 This is a schematic diagram of the constant temperature base plate in the vacuum crystallization equipment for improving crystal growth stability according to the present invention; Figure 7 This is a schematic diagram of the flow channel inside the constant temperature base plate in the vacuum crystallization equipment for improving crystal growth stability according to the present invention. Figure 8 This is a schematic front view of the constant temperature base plate in the vacuum crystallization equipment for improving crystal growth stability according to the present invention. Figure 9 This is a top view of the door panel in the vacuum crystallization equipment for improving crystal growth stability according to the present invention. Figure 10 This is a right-side structural schematic diagram of the door panel in the vacuum crystallization equipment for improving crystal growth stability according to the present invention.

[0018] Explanation of reference numerals in the attached drawings: 1. Vacuum chamber; 101. Inlet / outlet; 102. Gas distribution port; 103. Pressure relief port; 2. Constant temperature base plate; 201. Flow channel; 202. Inlet; 203. Outlet; 3. Top cover; 301. Interface; 302. Observation window; 4. Door panel; 5. Substrate holder; 6. Digital resistance gauge; 7. Vacuum pump; 8. Gas flow meter; 9. Valve. Detailed Implementation

[0019] Embodiments of the present invention are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present invention.

[0020] In the description of this invention, it should be understood that the terms "length," "width," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this invention, "a plurality of" means two or more, unless otherwise explicitly specified.

[0021] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention according to the specific circumstances.

[0022] The technical solutions provided by the embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0023] like Figures 1 to 10 As shown, the vacuum crystallization equipment for improving crystal growth stability in this embodiment includes a vacuum chamber 1, a constant temperature base plate 2, and a top cover 3. The internal space of the vacuum chamber 1 is used for vacuum crystallization. The constant temperature base plate 2 is fixedly and sealed to the bottom of the vacuum chamber 1. A constant temperature device is connected to the outside of the constant temperature base plate 2 to maintain the temperature of the constant temperature base plate 2 to a set value. The top cover 3 is fixedly and sealed to the top of the vacuum chamber 1. The internal space of the top cover 3 is a conical structure with a cross-sectional area that gradually decreases from bottom to top. Multiple interfaces 301 are provided on the top cover 3. The interfaces 301 are used for sealing and connecting auxiliary equipment.

[0024] The constant-temperature base plate 2 maintains a constant temperature at a set value, thereby precisely controlling the temperature at the bottom of the vacuum chamber 1 and uniformly transferring heat to the substrate, ensuring consistent substrate temperature. The conical structure inside the top cover 3 makes the gas field distribution in the upper and lower regions of the vacuum chamber 1 more uniform, greatly reducing the probability of crystal defects caused by uneven internal gas field during evacuation, thus improving crystal quality. The bottom of the top cover 3 has a horizontally arranged outer edge, which can be fixedly and sealed to the top of the side wall of the vacuum chamber 1, ensuring the sealing performance of the vacuum chamber 1 after connection. At this time, the reasonable internal conical design of the top cover 3 reduces the airflow resistance during evacuation, reduces equipment energy consumption, and saves production costs. The constant-temperature base plate 2 ensures the stability of the substrate temperature during nucleation-crystallization-growth of the wet film. The guiding effect of the internal conical structure of the top cover 3 on airflow reduces the impact of airflow disturbance on crystal growth. At the same time, the uniform temperature environment also ensures the consistency of crystal growth rate, making the shape and size of the crystal easier to control, improving the stability and yield of crystal growth.

[0025] Specifically, the vacuum chamber 1 has a rectangular cross-section and can be made of stainless steel or aluminum. The aluminum material requires surface treatment. Its shape is adapted to the bottom constant temperature plate and the internal conical structure of the top cover 3 to provide a stable vacuum environment for crystal growth. Two symmetrically arranged gas equalization ports 102 are opened on the rear side wall of the vacuum chamber 1. The gas equalization ports 102 are connected to a first inert gas input device through a pipeline with a valve 9. The valve 9 on the pipeline is a solenoid valve or a needle valve. A gas flow meter 8 is also provided on the pipeline. The amount of inert gas entering during evacuation is controlled by the solenoid valve, the needle valve and the gas flow meter 8. The first inert gas input device includes an inert gas cylinder and a gas pump. The gas pump connects the outlet of the inert gas cylinder to the gas equalization port 102. A control valve is also provided at the outlet of the inert gas cylinder.

[0026] In this embodiment, the constant temperature device includes a water tank equipped with a heating device such as a heating wire or heating element, and a cooling device. By turning on the heating device or the cooling device, the water in the water tank can be heated or cooled and maintained at the set temperature. The constant temperature base plate 2 has a spiral or serpentine flow channel 201. The inlet 202 and outlet 203 of the flow channel 201 are connected to the water tank through a circulating water pipe. The circulating water pipe is equipped with a circulating water pump. Water heated or cooled to the set temperature is input into the flow channel 201 of the constant temperature base plate 2 to maintain the temperature value of the constant temperature base plate 2. The circulating water flows out through the outlet 203 of the flow channel 201 in the constant temperature base plate 2 and returns to the water tank for reheating or cooling. The temperature value of the constant temperature base plate 2 is kept constant by the circulating water. The constant temperature base plate 2 evenly transfers cold / heat to the bottom area of ​​the vacuum chamber 1, reduces the temperature fluctuation at the bottom, and ensures the temperature of the substrate holder 5 and the substrate in the vacuum chamber 1, providing a stable temperature environment for crystal growth.

[0027] In the prior art, the top cover 3 adopts a planar design, which makes the gas field inside the vacuum chamber 1 relatively chaotic, resulting in high energy consumption and poor product quality in traditional equipment. To solve this problem, in this embodiment, the side wall inclination angle of the top cover 3 is between 45° and 60°; the interface 301 opened at the top of the top cover 3 is a flange structure, which has a chamfer transition with the inside of the top cover 3; the height from the top of the top cover 3 to the vacuum chamber 1 adopts an inclined conical design to form a conical side wall. The conical side wall can also guide the airflow inside the vacuum chamber 1, reduce the impact of airflow disturbance on crystal growth, and improve the stability of crystal growth.

[0028] Furthermore, an inlet / outlet 101 is provided on one side of the vacuum chamber 1, and a substrate holder 5 is movably inserted through the inlet / outlet 101. A door panel 4 is fixedly connected to the outside of the substrate holder 5. The door panel 4 can be fixedly and sealed against the outer wall of the inlet / outlet 101. The bottom of the substrate holder 5 contacts the top of the constant temperature base plate 2, so that the substrate contacts the constant temperature base plate 2 to ensure its temperature.

[0029] To ensure smoother entry and exit of the substrate holder 5 from the vacuum chamber 1, symmetrical strip tracks are provided on two inner sidewalls of the vacuum chamber 1 perpendicular to the sidewall where the inlet / outlet 101 is located. The substrate holder 5 slides within the corresponding strip tracks on both sides. The contact surface between the door panel 4 and the outer sidewall of the vacuum chamber 1 is a sealing surface. The door panel 4 is designed as a drawer to assist the substrate with wet film coating in and out of the vacuum chamber 1. In another embodiment, the door panel 4 includes a vertical plate and two horizontally symmetrically arranged strip sliders. One end of the strip slider is fixed to one side of the door panel 4. The vertical plate can be fixedly and sealed against or snapped against the outer sidewall of the vacuum chamber 1. The outer side of the strip slider is slidably connected to the corresponding strip track on the inner sidewall of the vacuum chamber. A support plate is connected between the two strip sliders. The support plate is used to snap the substrate holder 5, thereby fixing the substrate holder 5.

[0030] The auxiliary equipment includes a vacuum system, a digital resistance gauge 6, and a camera module. The vacuum system is sealed to the interface 301 on the top of the top cover 3 through a vacuum pipeline with a valve 9. Specifically, the vacuum system includes a vacuum pump 7, a vacuum valve 9, and a vacuum measuring device. The vacuum pump 7 can pump the gas pressure inside the vacuum chamber 1 to the vacuum level required for crystal growth. The vacuum valve 9 is used to control the connection and disconnection of the pipeline between the vacuum chamber 1 and the vacuum pump 7. The vacuum measuring device adopts an existing measuring instrument, which can monitor the vacuum level inside the vacuum chamber 1 in real time to ensure the stability of the vacuum environment.

[0031] An inert gas branch is connected to the vacuum pipeline. The inert gas branch is connected to a second inert gas input device. The inert gas branch is equipped with a control valve and a flow meter. During vacuuming, an adjustable flow rate of inert gas is introduced through the gas distribution port to carry the solvent in the wet film into the vacuum pipeline for discharge. When the vacuum pump 7 pumps the vacuum chamber 1, the pumping speed can meet the requirement of pumping to 10 Pa in 3 seconds, and then until the ultimate vacuum is reached. By adjusting the inert gas intake in the vacuum pipeline, it is equivalent to increasing the load of the branch while the vacuum pump 7 is evacuating the vacuum chamber 1, which indirectly reduces the pumping speed. Thus, the pumping effect of the vacuum pump 7 can be adjusted by introducing an adjustable flow rate of inert gas into the vacuum pipeline through the inert gas branch.

[0032] In addition, interfaces 301 are provided on all four side walls of the top cover 3. A digital resistance gauge 6, sealed to one of the interfaces 301 on one side wall, can display the vacuum level inside the vacuum chamber 1 in real time. A transparent plate or transparent glass is fixedly sealed at the interface 301 on the other side wall of the vacuum chamber 1, serving as an observation window 302. A camera module is arranged on the outside of the transparent plate or transparent glass. The camera module is a video camera or a video recording camera, used to capture images of the crystal growth process inside the vacuum chamber 1. The video recording camera can record and present the color and morphological changes of the wet film during the nucleation-crystallization-growth process. Two symmetrical pressure relief ports 103 are opened in the middle of both sides of the vacuum chamber 1. Pressure relief valves are installed at the pressure relief ports 103. In this embodiment, the pressure relief valves are solenoid valves with pressure relief buttons. The opening degree of the solenoid valve can be controlled by the pressure relief button, thereby controlling the pressure inside the vacuum chamber 1.

[0033] In this embodiment of the vacuum crystallization equipment for improving crystal growth stability, the constant-temperature base plate 2 maintains a constant temperature at a set value, thereby precisely controlling the temperature at the bottom of the vacuum chamber 1 and uniformly transferring heat or cold to the substrate, ensuring consistent substrate temperature. The conical structure inside the top cover 3 makes the gas field distribution in the upper and lower regions inside the vacuum chamber 1 more uniform, greatly reducing the probability of crystal defects caused by uneven internal gas field during evacuation, thus improving crystal quality. The reasonable conical design inside the top cover 3 reduces airflow resistance during evacuation, lowers equipment energy consumption, and saves production costs. The constant-temperature base plate 2 ensures the stability of the substrate temperature during nucleation-crystallization-growth of the wet film. The guiding effect of the conical structure inside the top cover 3 on airflow reduces the impact of airflow disturbance on crystal growth. At the same time, the uniform temperature environment also ensures the consistency of crystal growth rate, making the shape and size of the crystal easier to control, thus improving the stability and yield of crystal growth.

[0034] When vacuum pump 7 evacuates vacuum chamber 1, the pumping speed can reach 10 Pa in 3 seconds, and then continue until the ultimate vacuum is reached. By adjusting the amount of inert gas introduced into vacuum chamber 1 through the gas distribution port, the solvent in the wet film inside vacuum chamber 1 can be removed. At the same time, the pressure inside vacuum chamber 1 can be adjusted to a fixed value (such as stabilizing at 1 Pa). When vacuum pump 7 evacuates vacuum chamber 1, the pumping speed can reach 10 Pa in 3 seconds, and then continue until the ultimate vacuum is reached. By adjusting the amount of inert gas introduced into the vacuum line, it is equivalent to increasing the load on the branch while vacuum pump 7 is evacuating vacuum chamber 1, thereby indirectly reducing the pumping speed and adjusting the evacuation rate of vacuum chamber 1. The pressure values ​​of different vacuum chambers can be precisely controlled by adjusting the amount of inert gas introduced through the gas distribution port and the amount of inert gas introduced through the exhaust port. The experimental process can also be adjusted based on the recording effect of the observation window 302. The conical design inside the top cover 3 can optimize the film formation effect and avoid the formation of textures on the substrate surface.

[0035] Experimental results show that the perovskite films grown using the vacuum crystallization equipment of the present invention, which improves crystal growth stability, have more than 10% fewer internal defects than crystals grown using traditional equipment. The uniformity of grains and the uniformity of crystal growth rate are also significantly improved, greatly increasing production efficiency and product quality.

[0036] The embodiments described above are merely preferred embodiments of the present invention and are not intended to limit the scope of the present invention. Various modifications and improvements made by those skilled in the art to the technical solutions of the present invention without departing from the spirit of the present invention should fall within the protection scope defined by the claims of the present invention.

Claims

1. A vacuum crystallization apparatus for improving the stability of crystal growth, characterized in that, The system includes a vacuum chamber, a top cover, a thermostatic base plate, a door panel, and auxiliary equipment. The top cover is fixedly and sealed to the top of the vacuum chamber, and the thermostatic base plate is fixedly and sealed to the bottom. The vacuum chamber has an inlet / outlet on one side, and its internal space is used for vacuum crystal formation. The top cover has a conical structure with a cross-sectional area gradually decreasing from bottom to top. Several interfaces are provided on the top cover for sealing connections to the auxiliary equipment. The sidewalls of the top cover have an inclination angle between 45° and 60°. The interfaces at the top of the top cover have a chamfer between them and the internal sidewalls. A thermostatic device is connected to the thermostatic base plate to maintain its temperature at a set value. The thermostatic device includes a water tank with a heating and cooling device to maintain the water in the tank at the set temperature. The thermostatic base plate has a pre-set spiral or serpentine flow channel, with the inlet and outlet of the flow channel connected to circulating water pipes. A circulating water pump is installed on the circulating water pipe connected to the water tank. The door panel is fixedly and sealed against the outer wall of the inlet and outlet. A substrate frame is fixedly connected to the inner side of the door panel. After passing through the inlet and outlet, the bottom of the substrate frame contacts the top of the constant temperature base plate. A gas equalization port is opened on the side wall of the vacuum chamber. The gas equalization port is connected to a first inert gas input device through a pipeline with a valve. The auxiliary equipment includes a vacuum system. The vacuum system is sealed to the interface at the top of the top cover through a vacuum pipeline with a valve. An inert gas branch is connected to the vacuum pipeline. A second inert gas input device is connected to the inert gas branch. A control valve and a flow meter are installed on the inert gas branch to introduce inert gas into the vacuum pipeline during vacuuming, increasing the load on the vacuum system, reducing the effective pumping rate, thereby adjusting the evacuation rate of the vacuum chamber and achieving precise control of different pressure values ​​in the vacuum chamber.

2. The vacuum crystallization equipment for improving crystal growth stability according to claim 1, characterized in that, The vacuum chamber has symmetrical strip tracks on its two inner sidewalls that are perpendicular to the sidewalls where the inlet and outlet are located. The substrate holder is slidably disposed in the corresponding strip tracks on both sides.

3. The vacuum crystallization equipment for improving crystal growth stability according to claim 2, characterized in that, The door panel includes a vertical plate and two horizontally symmetrically arranged strip sliders. One end of each strip slider is fixed to the vertical plate. The vertical plate is fixedly and sealed to the outer wall of the vacuum cavity or snapped into place. The outer side of each strip slider is slidably connected to a corresponding strip track on the inner wall of the vacuum cavity. A support plate is connected between the two strip sliders. The support plate is used to snap into the substrate holder.

4. The vacuum crystallization equipment for improving crystal growth stability according to claim 1, characterized in that, The vacuum cavity has a rectangular cross-section.

5. The vacuum crystallization equipment for improving crystal growth stability according to claim 1, characterized in that, The interface at the very top of the top cover is a flange structure.

6. The vacuum crystallization equipment for improving crystal growth stability according to claim 1, characterized in that, The vacuum chamber is made of stainless steel or surface-treated aluminum.

7. The vacuum crystallization equipment for improving crystal growth stability according to claim 1, characterized in that, Two symmetrical pressure relief ports are provided in the middle of both sides of the vacuum chamber, and pressure relief valves are installed at the pressure relief ports.

8. The vacuum crystallization equipment for improving crystal growth stability according to claim 1, characterized in that, The auxiliary equipment also includes a digital resistance gauge and a camera module. The digital resistance gauge is fixedly and sealed to one of the interfaces on the side wall of the top cover. The digital resistance gauge can display the vacuum level in the vacuum chamber in real time. A transparent plate is fixedly and sealed at the interface on one of the side walls of the top cover. The camera module is arranged on the outside of the transparent plate for acquiring images of the crystal growth process in the vacuum chamber.

9. The vacuum crystallization apparatus for improving crystal growth stability according to any one of claims 1-8, characterized in that, The vacuum system includes a vacuum pump, a vacuum valve, and a vacuum measuring device. The vacuum pump is used to pump the gas pressure inside the vacuum chamber to the vacuum level required for crystal growth. The vacuum valve is used to control the opening and closing of the pipeline between the vacuum chamber and the vacuum pump. The vacuum measuring device is used to monitor the vacuum level inside the vacuum chamber in real time.

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