A dual-zone temperature-controlled electrostatic chuck and plasma processing apparatus

Abstract

The application relates to the technical field of wafer processing equipment, in particular to a double-zone temperature control electrostatic chuck and a plasma processing equipment, which comprises a carrier member and a heating assembly. The carrier member comprises a first heat insulation piece, an outer ring heating zone and an inner ring heating zone surrounded by the outer ring heating zone, and the first heat insulation piece is sleeved between the inner ring heating zone and the outer ring heating zone. The heating assembly is arranged in a process cavity and located below the carrier member. The heating assembly comprises a first sub-heating assembly and a second sub-heating assembly. The first sub-heating assembly and the second sub-heating assembly each comprise a lifting mechanism and a light beam emitter. The application effectively solves the problem that the center and the edge of a wafer cannot be independently and quickly temperature-controlled in a traditional scheme from two aspects of physical isolation and dynamic regulation, significantly improves the heating response speed and the temperature control precision, helps to improve the process uniformity and stability of wafer processing, and meets the demand of high-precision semiconductor manufacturing.

Description

Technical Field

[0001] This invention relates to the field of wafer processing equipment technology, and in particular to a dual-zone temperature-controlled electrostatic chuck and plasma processing equipment. Background Technology

[0002] Wafer temperature control is a key factor affecting process uniformity and stability. Current semiconductor process cavities generally employ integral metal heating pads with built-in heating wires. However, this makes it difficult to achieve independent temperature control between the wafer center and edges, leading to differences in photoresist removal rates and etching uniformity. Furthermore, traditional heating methods are limited by high thermal inertia and slow response times, failing to meet the demands of high-precision semiconductor manufacturing for rapid heating and cooling and flexible switching between multiple processes, thus hindering further improvements in equipment performance. Summary of the Invention

[0003] This invention relates to a dual-zone temperature-controlled electrostatic chuck and plasma processing equipment. The purpose is to effectively solve the problem of the inability to independently and quickly adjust the temperature of the wafer center and edge in traditional solutions from the two levels of physical isolation and dynamic control. This significantly improves the heating response speed and temperature control accuracy, helps to improve the process uniformity and stability of wafer processing, and meets the needs of high-precision semiconductor manufacturing.

[0004] To achieve the above objectives, the present invention provides a dual-zone temperature-controlled electrostatic chuck, comprising: The stage component includes a first heat insulation element, an outer ring heating area, and an inner ring heating area surrounded by the outer ring heating area. The inner ring heating area corresponds to the central region of the wafer, and the outer ring heating area corresponds to the edge region of the wafer. The first heat insulation element is sleeved between the inner ring heating area and the outer ring heating area to block the heat conduction path between the inner ring heating area and the outer ring heating area. A heating assembly is disposed within the process cavity and located below the stage component. The heating assembly includes a first sub-heating assembly and a second sub-heating assembly. Both the first and second sub-heating assemblies include a lifting mechanism and a beam emitter. The beam emitters of the first and second sub-heating assemblies emit beams toward the inner and outer heating areas, respectively, to heat the inner and outer heating areas. The lifting mechanism drives the beam emitter to move axially toward or away from the stage component, so as to dynamically regulate the temperature of the inner and outer heating areas by changing the energy of the beam irradiating the inner and outer heating areas.

[0005] Optionally, the dual-zone temperature-controlled electrostatic chuck further includes a temperature detection element and a control element. The temperature detection element is used to collect temperature information on the stage component or the wafer in real time. The control element is connected to the lifting mechanism and the temperature detection element, and the control element drives the lifting mechanism to move the beam emitter along the axial direction toward or away from the stage component according to the temperature information.

[0006] Optionally, the temperature detection devices are provided in several groups, and one group of temperature detection devices is used to collect temperature information of the inner heating zone or the central region of the wafer, while the other group of temperature detection devices is used to collect temperature information of the outer heating zone or the edge region of the wafer.

[0007] Optionally, the lifting mechanism includes a first support and a first drive. The first support is disposed below the inner heating zone. The first beam emitter in the first sub-heating assembly is disposed on the first support. The drive end of the first drive is connected to the first support. The first drive is connected to the control unit. The control unit controls the first drive to move the first support and the first beam emitter thereon along the axial direction toward or away from the inner heating zone.

[0008] Optionally, the lifting mechanism further includes a second support and a second drive; the second support is correspondingly disposed below the outer ring heating area and surrounds the first support along the circumferential gap, the second beam emitter in the second sub-heating assembly is disposed on the second support, the drive end of the second drive is connected to the second support, the second drive is connected to the control component, and the control component controls the second drive to move the second support and the second beam emitter thereon along the axial direction toward or away from the outer ring heating area.

[0009] Optionally, the inner heating zone includes at least 3 sector-shaped sections or 3n sector-shaped sections. The inner heating zone is cut outward from its center point into at least 3 sector-shaped sections, or cut outward from its center point into 3n sector-shaped sections in 3n equal parts, where n is a positive integer greater than or equal to 1. The number of the first beam emitters is set to 3n groups, and each group of the first beam emitters is arranged in a one-to-one correspondence with the fan-shaped part, so as to realize independent temperature control of each fan-shaped part by each group of the first beam emitters.

[0010] Optionally, the platform component further includes a plurality of second heat insulation components, each of which is disposed between two adjacent sector portions and connects the two adjacent sector portions to block the heat conduction path between the two adjacent sector portions.

[0011] Optionally, the first support member includes a plurality of fan-shaped support portions, the number of fan-shaped support portions corresponding to the number of fan-shaped portions, and there is a first gap between two adjacent fan-shaped support portions, and the beam emitting element in the first sub-heating assembly of each group is disposed on each fan-shaped support portion; The number of the first driving members is set to a certain number, and the number of the fan-shaped support parts is set one-to-one. Each first driving member is connected to each fan-shaped support part so as to drive each fan-shaped support part to move axially through each first driving member.

[0012] Optionally, the outer heating zone includes at least 3 sector rings or 3m sector rings, that is, the outer heating zone is cut into 3 or 3m sector rings along the circumference, where m is a positive integer greater than or equal to 1; the number of the second beam emitters is set to 3m groups, and each group of the second beam emitters corresponds one-to-one with the sector rings, so as to realize independent temperature control of each sector ring by each group of the second beam emitters.

[0013] Optionally, the platform component further includes a plurality of third heat insulation components, each of which is disposed between two adjacent sector rings and connects the two adjacent sector rings to block the heat conduction path between the two adjacent sector rings.

[0014] Optionally, the second support member includes a plurality of arc-shaped support portions, the number of which corresponds one-to-one with the number of the fan-shaped rings, and there is a second gap between two adjacent arc-shaped support portions, and the second beam emitting element of each group is disposed on each arc-shaped support portion; The number of the second driving members is set to a certain number, and they are arranged one-to-one with the number of the arc-shaped support parts. Each second driving member is connected to each arc-shaped support part so as to drive each arc-shaped support part to move axially through each second driving member.

[0015] Optionally, both the first support and the second support are provided with a focusing cover. The focusing cover has a focusing cavity recessed from the top to the bottom. Each of the first beam emitting element and the second beam emitting element is respectively disposed at the bottom of the groove of each focusing cavity. The area of ​​the radial cross section of the focusing cavity increases first and then decreases in the direction towards the stage component, so that the beam is focused on the corresponding area of ​​the stage component.

[0016] To achieve the above objectives, the present invention provides a plasma processing device, including a process chamber and a support member, and a dual-zone temperature-controlled electrostatic chuck disposed in the process chamber, wherein the top end of the support member extends into the process chamber and is connected to the dual-zone temperature-controlled electrostatic chuck.

[0017] The beneficial effects of this invention are as follows: This invention, by setting up a stage component including a first heat insulation element, physically isolates the heating zone into an inner heating zone and an outer heating zone, corresponding to the center and edge regions of the wafer, respectively, thus structurally achieving the foundation for independent temperature control of the two zones. Simultaneously, a heating assembly located below the stage is used, with its first and second sub-heating components emitting light beams to the two regions for heating. In particular, a lifting mechanism dynamically adjusts the axial distance between the light beam emitter and the stage component, thereby achieving rapid and dynamic temperature control of the two heating zones. Therefore, this invention effectively solves the problem of the inability to independently and rapidly adjust the temperature of the wafer center and edge in traditional solutions from both physical isolation and dynamic control perspectives. It significantly improves heating response speed and temperature control accuracy, contributing to improved process uniformity and stability in wafer processing and meeting the requirements of high-precision semiconductor manufacturing. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the structure of a plasma processing device in some embodiments of the present invention; Figure 2 This is a schematic diagram of the structure of the platform component of the plasma processing device in some embodiments of the present invention; Figure 3 This is a schematic diagram of the structure of the first support and the second support of the plasma processing device in some embodiments of the present invention.

[0019] Explanation of reference numerals in the attached figures: 1. Support component; 2. Process cavity; 3. Stage component; 31. Inner ring heating area; 311. Fan-shaped part; 312. Second heat insulation component; 32. Outer ring heating area; 321. Fan-shaped ring; 322. Third heat insulation component; 33. First heat insulation component; 4. Wafer; 5. Heating assembly; 51. First sub-heating assembly; 511. First support component; 5111. Fan-shaped support part; 5112. First gap; 52. Second sub-heating assembly; 521. Second support component; 5211. Arc-shaped support part; 5212. Second gap; 7. Beam emitter; 8. Concentrator. Detailed Implementation

[0020] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions in the embodiments of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without inventive effort are within the scope of protection of this invention. Unless otherwise defined, the technical or scientific terms used herein should have the ordinary meaning understood by those skilled in the art. The terms "comprising" and similar expressions used herein mean that the element or object preceding the word covers the element or object listed following the word and its equivalents, but do not exclude other elements or objects.

[0021] To address the problems existing in the prior art, embodiments of the present invention provide a dual-zone temperature-controlled electrostatic chuck, such as... Figure 1 As shown, the dual-zone temperature-controlled electrostatic chuck includes a stage component 3 and a heating component 5. The purpose is to solve the problem that traditional integral heating plates cannot achieve independent and rapid temperature control of the center and edge of the wafer 4 through structural innovation.

[0022] In one embodiment, such as Figure 1 As shown, the stage component 3 includes a first heat insulation element 33, an outer ring heating area 32, and an inner ring heating area 31 surrounded by the outer ring heating area 32. The inner ring heating area 31 corresponds to the central region of the wafer 4, and the outer ring heating area 32 corresponds to the edge region of the wafer 4. The first heat insulation element 33 is sleeved between the inner ring heating area 31 and the outer ring heating area 32 to block the heat conduction path between the inner ring heating area 31 and the outer ring heating area 32. This can create the prerequisite for independent temperature control of the central region and the edge region of the wafer 4 from a physical structure perspective. The first heat insulation element 33 divides the stage component 3 into inner and outer heating zones, which precisely correspond to the center and edge regions of the wafer 4, respectively. This fundamentally cuts off the direct heat conduction path between the two heating zones, effectively preventing mutual interference and temperature "crosstalk" caused by material heat conduction between the inner heating zone 31 and the outer heating zone 32 of the stage component 3. This makes it possible to perform differentiated and independent heating control on the inner heating zone 31 and the outer heating zone 32.

[0023] In one embodiment, the first heat insulation element 33 can be annular or sleeve-shaped, and is fitted between the inner heating zone 31 and the outer heating zone 32, physically separating them. Its material can be ceramic, polymer, or composite heat insulation material with low thermal conductivity, such as alumina ceramic or ceramic fiber reinforced composite material. This first heat insulation element 33 not only serves as a physical separator but also mechanically connects the inner heating zone 31 and the outer heating zone 32. Its core function is to act as a "thermal barrier," maximally blocking the radial heat conduction path between the inner heating zone 31 and the outer heating zone 32, thereby ensuring that the inner heating zone 31 and the outer heating zone 32 can achieve independent temperature control, preventing heat from freely diffusing from the high-temperature zone to the low-temperature zone, and providing a crucial structural guarantee for achieving precise control of the radial temperature distribution of the wafer 4.

[0024] In one embodiment, such as Figure 1 As shown, the heating component 5 is disposed within the process cavity 2 and located below the stage member 3. The heating component 5 includes a first sub-heating component 51 and a second sub-heating component 52. Both the first sub-heating component 51 and the second sub-heating component 52 include a lifting mechanism and a beam emitter 7. The beam emitter 7 of the first sub-heating component 51 and the second sub-heating component 52 emits beams toward the inner ring heating area 31 and the outer ring heating area 32, respectively, to heat the inner ring heating area 31 and the outer ring heating area 32. The lifting mechanism drives the beam emitter 7 to move axially toward or away from the stage member 3, so as to dynamically control the temperature of the inner ring heating area 31 and the outer ring heating area 32 by changing the energy of the beam irradiating the inner ring heating area 31 and the outer ring heating area 32. This embodiment constructs a control system that can independently, dynamically and non-contactly heat the inner ring heating area 31 and the outer ring heating area 32 of the wafer 4.

[0025] First, the heating component 5 is clearly divided into a first sub-heating component 51 and a second sub-heating component 52, and they are aligned with the inner heating zone 31 and the outer heating zone 32, respectively. This provides a physical carrier and execution basis for realizing independent temperature control of the two zones.

[0026] Secondly, each sub-heating component includes a beam emitter 7, which means that laser, infrared, and other beams can be used for heating. Its advantages are low thermal inertia and fast response speed, which can meet the needs of rapid heating and cooling in semiconductor processes.

[0027] Most importantly, each sub-heating component is equipped with an independent lifting mechanism, which allows the beam emitter 7 to move axially toward or away from the stage member 3, thereby dynamically changing the energy density of the beam irradiating the corresponding heating area. When rapid heating is required, the beam emitter 7 can be driven to move closer to the stage member 3, shortening the distance of the beam irradiating the stage member 3 to increase the energy density, thus enhancing the heating intensity of the stage member 3; when rapid cooling is required, the beam emitter 7 can be driven to move away from the stage member 3, increasing the distance of the beam irradiating the stage member 3 to decrease the energy density, thus reducing the heating intensity of the stage member 3. This combination of "independent light source plus dynamic distance adjustment" enables the temperature control of the inner heating area 31 and the outer heating area 32 to not only achieve independent zone control, but also possesses real-time, rapid, and high-precision dynamic regulation capabilities, fundamentally overcoming the shortcomings of traditional built-in heating wires with large thermal inertia and slow response, which is key to achieving a highly uniform process.

[0028] The radial, axial, and circumferential directions described in this invention are all coincident with or parallel to the radial, axial, and circumferential directions of the process cavity 2, and will not be elaborated further thereafter.

[0029] In one embodiment, the dual-zone temperature-controlled electrostatic chuck further includes a temperature detection element and a control element. The temperature detection element is used to collect temperature information on the stage component 3 or the wafer 4 in real time. The control element is connected to the lifting mechanism and the temperature detection element, and the control element drives the lifting mechanism to move the beam emitter 7 along the axial direction toward or away from the stage component 3 based on the temperature information. This closed-loop control system based on real-time temperature feedback achieves automated and precise dynamic adjustment of the heating process. By collecting temperature information on the stage component 3 or the wafer 4 in real time through the temperature detection element, the control element can obtain the actual temperature data of the inner heating zone 31 and the outer heating zone 32. Then, the control element compares and calculates the preset temperature target with the real-time detected temperature information, generates control commands, and drives the corresponding lifting mechanism to move the beam emitter 7 along the axial direction, thereby dynamically adjusting the beam irradiation distance and energy density.

[0030] Specifically, when the actual temperature of a certain area of ​​the wafer is detected to be lower than the preset target temperature, the beam emitter 7 can be controlled to move closer to the stage component 3 to enhance the energy density of the beam, i.e., to heat the corresponding area of ​​the wafer; conversely, it can be moved away from the stage component 3 to enhance the energy density of the beam, i.e., to cool the corresponding area of ​​the wafer. This closed-loop control mechanism of "sensing plus feedback plus execution" ensures that the temperature of the inner and outer heating zones 32 can be maintained quickly, stably, and independently within the set process window, significantly improving the response speed, accuracy, and stability of temperature control. It fundamentally solves the problem of temperature overshoot or lag caused by factors such as thermal inertia in open-loop control, and is the core guarantee for achieving a high uniformity process.

[0031] In one embodiment, the temperature sensing element can be at least one of an infrared temperature sensor, a thermocouple, or a fiber optic thermometer. The temperature sensing element is configured in a non-contact (e.g., with an infrared sensor) or contact (e.g., with an embedded thermocouple) manner with the stage component 3 or the wafer 4. Its core function is to continuously and accurately acquire actual temperature information and feed this information back to the control component in real time, thereby providing a key input signal for the closed-loop dynamic temperature control system.

[0032] In one embodiment, the controller can be at least one of a programmable logic controller, a microprocessor, a digital signal processor, or an industrial computer. Its core function is to receive real-time temperature information from temperature sensors in various zones and compare and calculate it with preset temperature process parameters (e.g., a target temperature curve). Subsequently, the controller generates corresponding control commands based on the comparison results (e.g., temperature difference, rate of change, etc.) to drive the lifting mechanism, thereby controlling the axial position of the beam emitter 7 and achieving independent, dynamic, closed-loop control of the temperatures of the inner heating zone 31 and the outer heating zone 32.

[0033] In one embodiment, the temperature sensors are provided in multiple groups, with one group collecting temperature information of the inner heating zone 31 or the central region of the wafer, and the other group collecting temperature information of the outer heating zone 32 or the edge region of the wafer. This achieves zoned, independent, and synchronous monitoring of the temperatures of the inner heating zone 31 and the outer heating zone 32, providing accurate input signals for subsequent independent and precise closed-loop control.

[0034] Multiple temperature sensors are grouped together: one group specifically corresponds to the inner heating zone 31 or the central region of the wafer above it, while another group specifically corresponds to the outer heating zone 32 or the edge region of the wafer above it. This allows the controller to acquire real-time, separate temperature data for the central and edge regions of wafer 4. This arrangement avoids control deviations caused by a single or few sensor points failing to fully reflect the temperature distribution of the entire area. By providing independent temperature feedback loops for the inner and outer heating zones 31 and 32, the system can more accurately identify temperature differences between the inner and outer zones or temperature non-uniformity within each zone. This allows the controller to issue more precise commands, driving the corresponding lifting mechanisms and beam emitters 7 for targeted adjustments. This fundamentally ensures the effectiveness and accuracy of independent dynamic temperature control in both zones, a key sensing element for ensuring the temperature uniformity of the entire wafer 4.

[0035] In one embodiment, such as Figure 1As shown, the lifting mechanism includes a first support member 511 and a first drive member (not shown). The first support member 511 is correspondingly disposed below the inner ring heating zone 31. The first beam emitter in the first sub-heating assembly 51 is disposed on the first support member 511. The drive end of the first drive member is connected to the first support member 511. The first drive member is connected to the control member. The control member controls the first drive member to drive the first support member 511 to move the first beam emitter on it along the axial direction toward or away from the inner ring heating zone 31.

[0036] This establishes an independent and controllable precision temperature control mechanism for the inner heating zone 31. By mounting the first beam emitter on a dedicated first support 511 and driving it axially by a first drive, direct and dynamic control of the energy input intensity of the central heating area is achieved. Furthermore, the control unit precisely controls the movement of the first drive based on the real-time temperature feedback of the inner heating zone 31, thereby changing the axial distance between the beam emitter 7 and the inner heating zone 31.

[0037] Specifically, when heating is required, the first beam emitter is driven closer to the stage component 3 to enhance the irradiation energy density; when cooling or heat preservation is required, the first beam emitter is driven away from the stage component 3 to reduce energy input. This design, which combines the heating source with an independent drive unit, frees the temperature control of the inner heating zone 31 from dependence on the overall heating plate, enabling rapid response and precise execution of control commands. This allows for rapid and independent adjustment of the temperature in the central region of the wafer 4, and is the core mechanical structure for improving the temperature control response speed and zoning accuracy of the entire system.

[0038] In one embodiment, the first driving member can be disposed on the base or support structure of the process cavity 2 below or to the side of the first support member 511, and its driving end (such as a telescopic rod, lead screw, or linear motor) is connected to the first support member 511. This provides stable and reliable axial movement support and power for the first support member 511 and the beam emitter 7 carried on it. Installing the first driving member independently on a relatively fixed base, rather than integrating it with the heating assembly 5, can effectively reduce the risk of interference from the heating of the first driving member itself to the beam emitter 7 or temperature detection. At the same time, this arrangement also provides clear motion guidance for the independent lifting and lowering movement of the first sub-heating assembly 51, ensuring that the beam emitter 7 can move precisely and smoothly along the axial direction toward or away from the inner heating zone 31, thereby achieving rapid and precise dynamic adjustment of the heating energy of the inner heating zone 31. This is a key mechanical layout to ensure the stable realization of the independent temperature control function of the zones.

[0039] In one embodiment, such as Figure 1As shown, the lifting mechanism further includes a second support member 521 and a second driving member (not shown); the second support member 521 is correspondingly disposed below the outer ring heating area 32 and surrounds the first support member 511 with a circumferential gap; the second beam emitter of the second sub-heating assembly 52 is disposed on the second support member 521; the driving end of the second driving member is connected to the second support member 521; the second driving member is connected to the control member; the control member controls the second driving member to drive the second support member 521 to move the second beam emitter thereon axially toward or away from the outer ring heating area 32.

[0040] This embodiment constructs a precision temperature control actuator for the outer heating zone 32, which is structurally and controllably independent of the inner heating zone 31. By mounting the second beam emitter on a second support 521 circumferentially surrounding the first support 511, and driving its axial movement by an independent second drive, the temperature control of the edge region of wafer 4 is completely decoupled from that of the center region. The controller can independently and precisely control the action of the second drive based on the real-time temperature feedback of the outer heating zone 32, thereby changing the axial position of the second beam emitter corresponding to the outer heating zone 32 and dynamically adjusting the irradiation energy density. This design allows the inner and outer heating zones 32 to respond to their respective temperature commands separately, simultaneously, and without interference, achieving independent and rapid temperature adjustment of the center and edge of wafer 4. This is a key structural guarantee for achieving high radial temperature uniformity across the entire wafer 4.

[0041] In one embodiment, the second driving member can also be positioned on the base or support structure of the process cavity 2 below or to the side of the second support member 521, with its driving end (such as a telescopic rod, lead screw, or linear motor) connected to the second support member 521. The principle and driving direction of the first driving member will not be described here.

[0042] In one embodiment, such as Figure 2As shown, the inner heating zone 31 includes at least three sector-shaped sections 311 or 3n sector-shaped sections 311. That is, the inner heating zone 31 is divided outwards from its center into at least three sector-shaped sections 311, or divided outwards from its center into 3n equal parts, where n is a positive integer greater than or equal to 1. The number of first beam emitters is set to 3n groups, and each group of first beam emitters corresponds one-to-one with each of the sector-shaped sections 311, thereby achieving independent temperature control for each sector-shaped section 311. Through refined and zoned independent temperature control of the inner heating zone 31, the inner heating zone 31 is divided into 3n sector-shaped sections 311, and the first beam emitters are also correspondingly set to 3n groups, so that each sector-shaped section 311 has an independent beam heating source. This one-to-one mapping relationship allows the controller to independently and precisely adjust the axial position of the corresponding first beam emitter based on the real-time temperature feedback of each sector 311, thereby achieving differentiated control of the heating intensity of each sector 311. This design not only compensates for the overall temperature unevenness in the central region of wafer 4, but also addresses the circumferential temperature unevenness caused by factors such as uneven airflow and plasma distribution within the process cavity 2. This improves the temperature uniformity of the entire central region of wafer 4 at a finer scale, making it a key structural design for achieving ultra-high precision temperature control.

[0043] Specifically, in some embodiments, the number of sector-shaped portions 311 can be 3, 4, 5, etc. In other embodiments, the number of sector-shaped portions 311 can be an integer multiple of 3, such as 3, 6, 9, 12, etc., satisfying the form 3n (n is a positive integer greater than or equal to 1). Dividing the inner heating zone 31 into 3n equally divided sector-shaped portions 311 is mainly to achieve circumferential fine-grained zone temperature control while taking into account the symmetry, stability, and feasibility of the control system. Using multiples of 3 for equal division can form a symmetrical and uniform sector-shaped structure, which helps to balance the heat field distribution.

[0044] In one embodiment, such as Figure 2As shown, the platform component 3 also includes several second heat insulation members 312. Each second heat insulation member 312 is disposed between and connects two adjacent sector sections 311 to block the heat conduction path between adjacent sector sections 311. This arrangement achieves further thermal isolation between the various sector sections 311 of the inner ring heating zone 31. By providing second heat insulation members 312 between two adjacent sector sections 311, the direct heat conduction path between each sector section 311 is physically cut off, making it difficult for the heat of each sector section 311 to be laterally transferred to adjacent areas during heating. This structure enables a higher degree of thermal independence among the 3n sector sections 311 of the inner ring heating zone 31. When the controller independently adjusts the axial position of the corresponding first beam emitter for differentiated heating based on the temperature feedback of each sector 311, the second heat insulation component 312 effectively prevents the lateral diffusion of heat caused by temperature differences. This ensures more precise and faster temperature adjustment for each sector 311 and significantly reduces thermal interference between adjacent areas. This provides a crucial structural guarantee for high-precision circumferential zoned temperature control of the inner heating zone 31 to address potential thermal non-uniformity in the circumferential direction of the wafer 4.

[0045] In one embodiment, the structure of the second heat insulation member 312 can be a radially extending sheet-like structure or a strip-like structure, and the axial cross section is rectangular or trapezoidal. Its material can be the same as or similar to that of the first heat insulation member 33, such as alumina ceramic, silicon nitride, or other low thermal conductivity ceramics or composite materials, and it is tightly filled in the gap between two adjacent fan-shaped portions 311 to play the role of connection, support and heat insulation.

[0046] In one embodiment, such as Figure 3 As shown, the first support member 511 includes a plurality of fan-shaped support portions 5111, the number of which corresponds one-to-one with the number of the fan-shaped portions 311, and there is a first gap 5112 between two adjacent fan-shaped support portions 5111 to prevent interference when two adjacent fan-shaped support portions 5111 move axially. The first beam emitting element of each group is disposed on each fan-shaped support portion 5111. The number of the first driving members is a plurality, which corresponds one-to-one with the number of the fan-shaped support portions 5111. Each first driving member is connected to each fan-shaped support portion 5111 to drive each fan-shaped support portion 5111 to move axially.

[0047] This achieves an independent, precise, and independently controllable mechanical layout for the first beam emitters corresponding to each sector 311 of the inner heating zone 31. By dividing the first support member 511 into several sector support sections 5111 corresponding one-to-one with the number of sector sections 311, and setting the first beam emitters on each sector support section 5111 respectively, each sector section 311 has an independent heating light source support structure. A first gap 5112 is set between adjacent sector support sections 5111 to effectively avoid mechanical interference when each segment performs independent axial lifting and lowering movements, ensuring the independence of the operation. Most importantly, each sector support section 5111 is equipped with an independent first drive member, so that the control member can drive the sector support section 5111 and its first beam emitter independently and precisely along the axial direction based on the temperature feedback of the corresponding sector section 311.

[0048] In one embodiment, such as Figure 2 As shown, the outer heating zone 32 includes at least 3 sector rings 321 or 3m sector rings 321, that is, the outer heating zone 32 is cut into 3 or 3m sector rings 321 along the circumference, where m is a positive integer greater than or equal to 1; the number of the second beam emitters is set in 3m groups, and each group of the second beam emitters is arranged in a one-to-one correspondence with the sector rings 321, so as to realize independent temperature control of each sector ring 321 by each group of the second beam emitters.

[0049] By further dividing the outer heating zone 32 into at least three circumferentially cut sector rings 321 or 3m sector rings 321, and correspondingly setting the second beam emitter to 3m groups, each sector ring 321 corresponds to an independent beam heating source. This one-to-one mapping relationship between the "sector ring 321 region" and the "independent beam heating component 5" allows the controller to independently and precisely adjust the axial position of the corresponding second beam emitter based on the real-time temperature feedback of each sector ring 321, thereby achieving differentiated control of the heating intensity of each sector ring 321. This design can not only control the overall temperature difference between the edge and center of wafer 4, but also finely compensate for the circumferential temperature non-uniformity that may be caused by the symmetry of the process cavity 2 and uneven airflow distribution within the edge region of wafer 4, thereby significantly improving the temperature uniformity and process consistency of the entire edge region of wafer 4 and even the entire wafer 4.

[0050] In one embodiment, such as Figure 2As shown, the platform component 3 also includes several third heat insulation elements 322. Each third heat insulation element 322 is disposed between and connects two adjacent sector rings 321 to block the heat conduction path between adjacent sector rings 321. This achieves further thermal isolation between the sector rings 321 inside the outer heating zone 32. By setting the third heat insulation element 322 between two adjacent sector rings 321, the direct heat conduction path between each sector ring 321 is physically cut off, making it difficult for the heat of each sector ring 321 to diffuse circumferentially to adjacent sector rings 321 when heated. This design greatly enhances the thermal independence between the sector rings 321 inside the outer heating zone 32. When the controller independently adjusts the axial position of the corresponding beam emitter 7 for differentiated heating based on the real-time temperature feedback of each sector ring 321, the third heat insulation component 322 effectively prevents the lateral transfer of heat caused by temperature differences between adjacent sector rings 321. This ensures that the temperature adjustment of each sector ring 321 is more precise, faster, and does not interfere with each other. This provides a crucial structural guarantee for high-precision circumferential independent temperature control of the outer heating zone 32 to address potential circumferential temperature non-uniformity in the edge region of wafer 4.

[0051] In one embodiment, the third heat insulation element 322 may be an arc-shaped sheet, and its material is preferably a ceramic (such as alumina or aluminum nitride) or a high-performance composite material with low thermal conductivity.

[0052] In one embodiment, such as Figure 3 As shown, the second support member 521 includes a plurality of arc-shaped support portions 5211, the number of which corresponds one-to-one with the number of the fan-shaped rings 321, and there is a second gap 5212 between two adjacent arc-shaped support portions 5211 to prevent interference when two adjacent arc-shaped support portions 5211 move axially. The second beam emitting element of each group is disposed on each arc-shaped support portion 5211. The number of the second driving members is a plurality of which corresponds one-to-one with the number of the arc-shaped support portions 5211. Each second driving member is connected to each arc-shaped support portion 5211 to drive each arc-shaped support portion 5211 to move axially.

[0053] This allows for an independent, precise, and independently controllable mechanical layout for the heating execution units corresponding to each sector ring 321 of the outer heating zone 32. By dividing the second support member 521 into several arc-shaped support portions 5211 corresponding one-to-one with the number of sector rings 321, and by respectively setting the second beam emitter on each arc-shaped support portion 5211, each sector ring 321 of the outer heating zone 32 has an independent heating light source support structure. The second gap 5212 set between adjacent arc-shaped support portions 5211 effectively avoids mechanical interference when each segment performs independent axial lifting and lowering movements, ensuring the independence of movement. Most importantly, by configuring an independent second drive member for each arc-shaped support portion 5211, the control unit can drive the arc-shaped support portion 5211 and its second beam emitter to move independently and precisely along the axial direction based on the real-time temperature feedback of the corresponding sector ring 321.

[0054] In one embodiment, such as Figure 1 As shown, both the first support 511 and the second support 521 are provided with a focusing cover 8. The focusing cover 8 has a concave focusing cavity extending from the top to the bottom. Each of the first beam emitters and the second beam emitters is located at the bottom of the concave cavity. The radial cross-sectional area of ​​the focusing cavity increases first and then decreases towards the stage member 3, so that the beam is focused onto the corresponding area of ​​the stage member 3. Optical focusing significantly improves the energy utilization rate and the uniformity and precision of heating for the first and second beam emitters. By providing a focusing cover 8 on the first support 511 and the second support 521, and designing the radial cross-sectional area of ​​its focusing cavity to "increase first and then decrease" towards the stage member 3, a bowl-shaped or parabolic reflective focusing structure is formed. When the first and second beam emitters are positioned at the bottom of the focusing cavity to emit beams, the beams are guided and initially converged by the sidewalls of the focusing cavity (especially its "increasing" expansion section) before reaching the stage member 3, and then further concentrated in the "decreasing" convergence section. This design effectively gathers beams that might otherwise diverge, reduces energy scattering loss during transmission, and focuses more energy axially onto the corresponding inner heating zone 31 or outer heating zone 32. This not only improves the conversion efficiency of light energy to heat energy, making heating faster and more energy-efficient, but also makes the light spot irradiated on the wafer 4 more concentrated and the energy distribution more uniform and controllable, thereby helping to achieve more precise and stable zoned temperature control.

[0055] To address the problems existing in the prior art, embodiments of the present invention also provide a plasma processing device, including a process chamber and a support member 1, and a dual-zone temperature-controlled electrostatic chuck disposed in the process chamber. The top end of the support member 1 extends into the process chamber 2 and is connected to the dual-zone temperature-controlled electrostatic chuck.

[0056] In one embodiment, such as Figure 1 As shown, the dual-zone temperature-controlled electrostatic chuck includes a first sub-heating component 51, which is movably sleeved outside the support member 1.

[0057] In one embodiment, the plasma processing equipment can be a dry process equipment commonly used in semiconductor manufacturing, such as, but not limited to, plasma etching equipment, chemical vapor deposition equipment, physical vapor deposition equipment, and plasma resist / ashing equipment. The dual-zone temperature-controlled electrostatic chuck of the present invention can be integrated into the process chamber of such equipment, enabling high-precision, zone-independent temperature control of the supported wafer 4 during the process. By precisely adjusting the temperatures of the inner heating zone 31 and the outer heating zone 32, the present invention can optimize the uniformity of the plasma reaction with the surface of the wafer 4, thereby effectively improving the in-plane process uniformity of the wafer 4, enhancing the consistency of etching or deposition rates, and strengthening critical dimension control capabilities during key process steps such as etching, deposition, or resist removal, ultimately improving the manufacturing yield and performance of semiconductor devices.

[0058] While embodiments of the present invention have been described in detail above, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations fall within the scope and spirit of the present invention. Furthermore, the present invention described herein may have other embodiments and can be implemented or carried out in various ways.

Claims

1. A dual-zone temperature-controlled electrostatic chuck, characterized in that, include: The stage component includes a first heat insulation element, an outer ring heating area, and an inner ring heating area surrounded by the outer ring heating area. The inner ring heating area corresponds to the central region of the wafer, and the outer ring heating area corresponds to the edge region of the wafer. The first heat insulation element is sleeved between the inner ring heating area and the outer ring heating area to block the heat conduction path between the inner ring heating area and the outer ring heating area. A heating assembly is disposed within the process cavity and located below the stage component. The heating assembly includes a first sub-heating assembly and a second sub-heating assembly. Both the first and second sub-heating assemblies include a lifting mechanism and a beam emitter. The beam emitters of the first and second sub-heating assemblies emit beams toward the inner and outer heating areas, respectively, to heat the inner and outer heating areas. The lifting mechanism drives the beam emitter to move axially toward or away from the stage component, so as to dynamically regulate the temperature of the inner and outer heating areas by changing the energy of the beam irradiating the inner and outer heating areas.

2. The dual-zone temperature-controlled electrostatic chuck according to claim 1, characterized in that, It also includes a temperature detection device and a control device. The temperature detection device is used to collect temperature information on the stage component or the wafer in real time. The control device is connected to the lifting mechanism and the temperature detection device, and the control device drives the lifting mechanism to move the beam emitter along the axial direction toward or away from the stage component according to the temperature information.

3. The dual-zone temperature-controlled electrostatic chuck according to claim 2, characterized in that, The temperature detection devices are provided in several groups, and are divided into two groups. One group of temperature detection devices is used to collect temperature information of the inner heating zone or the central area of ​​the wafer, and the other group of temperature detection devices is used to collect temperature information of the outer heating zone or the edge area of ​​the wafer.

4. The dual-zone temperature-controlled electrostatic chuck according to claim 2, characterized in that, The lifting mechanism includes a first support and a first drive. The first support is disposed below the inner heating zone. The first beam emitter in the first sub-heating assembly is disposed on the first support. The drive end of the first drive is connected to the first support. The first drive is connected to the control unit. The control unit controls the first drive to move the first support and the first beam emitter thereon along the axial direction toward or away from the inner heating zone.

5. The dual-zone temperature-controlled electrostatic chuck according to claim 4, characterized in that, The lifting mechanism further includes a second support and a second drive; the second support is correspondingly disposed below the outer ring heating area and surrounds the first support along the circumferential gap, the second beam emitter in the second sub-heating assembly is disposed on the second support, the drive end of the second drive is connected to the second support, the second drive is connected to the control component, and the control component controls the second drive to move the second support and the second beam emitter thereon along the axial direction toward or away from the outer ring heating area.

6. The dual-zone temperature-controlled electrostatic chuck according to claim 5, characterized in that, The inner heating zone includes at least 3 sector-shaped sections or 3n sector-shaped sections. The inner heating zone is cut outward from its center point into at least 3 sector-shaped sections, or cut outward from its center point into 3n sector-shaped sections in 3n equal parts, where n is a positive integer greater than or equal to 1. The number of the first beam emitters is set to 3n groups, and each group of the first beam emitters is arranged in a one-to-one correspondence with the fan-shaped part, so as to realize independent temperature control of each fan-shaped part by each group of the first beam emitters.

7. The dual-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that, The platform component further includes several second heat insulation components, each of which is disposed between two adjacent sector portions and connects the two adjacent sector portions to block the heat conduction path between the two adjacent sector portions.

8. The dual-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that, The first support member includes a plurality of fan-shaped support portions, the number of fan-shaped support portions corresponding to the number of fan-shaped portions, and there is a first gap between two adjacent fan-shaped support portions. The beam emitting element in the first sub-heating assembly of each group is disposed on each fan-shaped support portion. The number of the first driving members is set to a certain number, and the number of the fan-shaped support parts is set one-to-one. Each first driving member is connected to each fan-shaped support part so as to drive each fan-shaped support part to move axially through each first driving member.

9. The dual-zone temperature-controlled electrostatic chuck according to claim 6, characterized in that, The outer heating zone includes at least 3 sector rings or 3m sector rings, that is, the outer heating zone is cut into 3 or 3m sector rings along the circumference, where m is a positive integer greater than or equal to 1; the number of the second beam emitters is set to 3m groups, and each group of the second beam emitters is arranged in a one-to-one correspondence with the sector rings, so as to realize independent temperature control of each sector ring by each group of the second beam emitters.

10. The dual-zone temperature-controlled electrostatic chuck according to claim 9, characterized in that, The platform component also includes several third heat insulation components, each of which is disposed between two adjacent sector rings and connects the two adjacent sector rings to block the heat conduction path between the two adjacent sector rings.

11. The dual-zone temperature-controlled electrostatic chuck according to claim 9, characterized in that, The second support member includes a plurality of arc-shaped support portions, the number of which corresponds one-to-one with the number of the fan-shaped rings, and there is a second gap between two adjacent arc-shaped support portions. The second beam emitting element of each group is disposed on each arc-shaped support portion. The number of the second driving members is set to a certain number, and they are arranged one-to-one with the number of the arc-shaped support parts. Each second driving member is connected to each arc-shaped support part so as to drive each arc-shaped support part to move axially through each second driving member.

12. The dual-zone temperature-controlled electrostatic chuck according to claim 5, characterized in that, Both the first support and the second support are provided with a focusing cover. The focusing cover has a focusing cavity recessed from the top to the bottom. Each of the first beam emitting element and the second beam emitting element is respectively located at the bottom of the groove of each focusing cavity. The area of ​​the radial cross section of the focusing cavity increases first and then decreases in the direction towards the stage component, so that the beam is focused on the corresponding area of ​​the stage component.

13. A plasma processing device, characterized in that, It includes a process chamber and a support member, and a dual-zone temperature-controlled electrostatic chuck as described in any one of claims 1 to 12 disposed in the process chamber, wherein the top end of the support member extends into the process chamber and is connected to the dual-zone temperature-controlled electrostatic chuck.

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