Winding structure and transformer

Abstract

This application relates to a winding structure and a transformer. The winding structure includes coil conductors, a sheath layer, a first insulating layer, a conductive metal layer, a first semiconductor layer, a second insulating layer, and a second semiconductor layer. The sheath layer is disposed on the outer surface of the coil conductors to form a first coil. The first insulating layer is disposed on the outer surface of the first coil to form a second coil. The conductive metal layer is disposed on the second coil to form a third coil. The first semiconductor layer is disposed on the third coil to form a fourth coil. The second insulating layer is disposed on the fourth coil to form a fifth coil. The second semiconductor layer is disposed on the outer surface of the fifth coil. This application improves the insulation performance of the winding structure under high-frequency, high-voltage combined stress through a multi-layer composite structure.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and in particular to a winding structure and a transformer. Background Technology

[0002] With the rapid development of artificial intelligence computing power and high-power power consumption scenarios, medium- to high-frequency transformers are needed in medium- to high-voltage power grid systems to achieve efficient energy conversion and safe isolation. However, high-frequency operation exacerbates the skin effect of transformers, while high-voltage environments impose stringent requirements on winding insulation. These two factors are mutually restrictive, making it difficult for traditional transformer designs to simultaneously achieve high efficiency and high insulation reliability.

[0003] Current technologies generally employ high-insulation-strength insulating materials to cover the coils and introduce shielding layers (such as copper foil) to suppress electric field distortion. However, such solutions often come at the cost of conversion efficiency. On the one hand, excessively thick insulation layers increase leakage inductance and distributed capacitance, affecting high-frequency characteristics. On the other hand, simply stacking insulating materials cannot effectively solve core problems such as localized electric field concentration and surface charge accumulation under high voltage. Furthermore, even with shielding materials, it is difficult to achieve uniform control of the electric field throughout the entire space, and abrupt changes in potential gradients may still occur on the winding surface, triggering partial discharge or surface flashover. Consequently, the insulation performance still fails to meet the requirements for long-term safe operation under high-frequency, high-voltage combined stress. Summary of the Invention

[0004] In view of the above, it is necessary to provide a winding structure and transformer that can reduce the technical problem of poor insulation performance of the winding structure under high-frequency high-voltage combined stress in the prior art.

[0005] This application first provides a winding structure, including a coil conductor, a wire sheath, a first insulating layer, a conductive metal layer, a first semiconductor layer, a second insulating layer, and a second semiconductor layer. The wire sheath is disposed on the outer surface of the coil conductor to form a first coil, the first insulating layer is disposed on the outer surface of the first coil to form a second coil, the conductive metal layer is disposed on the second coil to form a third coil, the first semiconductor layer is disposed on the third coil to form a fourth coil, the second insulating layer is disposed on the fourth coil to form a fifth coil, and the second semiconductor layer is disposed on the outer surface of the fifth coil.

[0006] In the winding structure of this application, a multi-layer composite structure is formed by sequentially distributing a wire-insulating layer, a first insulating layer, a conductive metal layer, a first semiconductor layer, a second insulating layer, and a second semiconductor layer outside the coil conductor. The wire-insulating layer first provides basic insulation protection for the conductor and reduces eddy current losses at high frequencies. The first insulating layer provides a primary high-voltage isolation barrier, preventing direct electrical contact between the conductor and subsequent layers. The conductive metal layer, as an electric field control layer, guides and homogenizes the potential distribution around the winding, suppressing local electric field concentration. The first semiconductor layer, closely attached to the conductive metal layer, utilizes its semi-conductive properties to make the surface potential tend to be continuous and smooth, reducing potential jumps caused by metal layer edges or gaps, and achieving a near-zero surface electric field distribution. The second insulating layer constitutes the main insulation thickness and bears most of the voltage stress. The outermost second semiconductor layer further homogenizes the outer surface electric field, reducing surface discharge. The sequential synergistic effect of each layer allows the electric field distribution inside and on the surface of the entire winding structure to exhibit a gradually smooth transition from the coil conductor to the outside, thereby improving the overall insulation reliability and withstand voltage of the winding structure under high-frequency, high-voltage conditions. That is, this application can improve the insulation performance of the winding structure under high-frequency high-voltage composite stress through a multi-layer composite structure.

[0007] In some embodiments, the coil conductor is a coil obtained by winding multiple coils in a disc-like manner after the surface is covered by a wire sheath, with the multiple coils stacked on top of each other and connected in series.

[0008] In some embodiments, the coil conductor is a stranded wire; the cladding is made of one of the following materials: polyester fiber, polyimide fiber, polyetheretherketone, ceramic-coated polyester, boron nitride nanosheet reinforced epoxy resin, liquid crystal polymer, or aerogel composite paper.

[0009] In some embodiments, a plurality of stacked and connected coils are referred to as a first coil, and a first insulating layer is disposed on the outer surface of the first coil in a ring-wrapping manner to form a second coil; wherein, the first insulating layer is an insulating paper material selected from aramid, nanocellulose, intrinsically flexible proton membrane or self-healing insulating paper.

[0010] In some embodiments, a conductive metal layer is disposed around the second coil at a preset interval and a preset angle to form a third coil; wherein the conductive metal layer is strip-shaped and is made of a material selected from conductive copper foil, copper-nickel alloy foil, or composite copper foil.

[0011] In some embodiments, the second insulating layer is disposed on the fourth coil by casting to form the fifth coil; wherein the second insulating layer is one of the following materials: high thermal conductivity modified epoxy resin, nanocomposite ceramic epoxy, liquid crystal polymer-based thermally conductive plastic, organosilicon gel, or polyurethane composite material.

[0012] In some embodiments, the thickness of the second insulating layer from its own surface to the surface of the first semiconductor layer is greater than the thickness of the coil wire.

[0013] In some embodiments, a first semiconductor layer is disposed on a third coil in a ring-shaped manner to form a fourth coil; a second semiconductor layer is disposed on the outer surface of a fifth coil by coating; wherein, the first semiconductor layer is a material selected from intrinsic semiconductor resin or doped functional material, and the second semiconductor layer is a material selected from intrinsic semiconductor resin or doped functional material.

[0014] This application also provides a transformer, including a primary winding, a secondary winding, and a magnetic core, wherein the primary winding and / or the secondary winding is the winding structure of any of the embodiments described above in this application.

[0015] In some embodiments, the transformer further includes a mounting base, on which the magnetic core is disposed, and the mounting base is oriented parallel or perpendicular to the axial direction of the primary winding. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the overall appearance of the winding structure according to an embodiment of this application.

[0017] Figure 2 This application Figure 1 A simplified cross-sectional view of the winding structure in the embodiment.

[0018] Figure 3 This is a simplified cross-sectional view of the coil conductor according to an embodiment of this application.

[0019] Figure 4 This is a schematic diagram of the transformer structure according to an embodiment of this application.

[0020] Figure 5 This is a schematic diagram of the structure of a transformer according to another embodiment of this application.

[0021] Explanation of main component symbols 1. Winding structure; 11. Coil conductor; 12. Wire sheath; 13. First insulation layer; 14. Conductive metal layer; 15. First semiconductor layer; 16. Second insulation layer; 17. Second semiconductor layer; 201. Wire disc; 100. Transformer; 101. Primary winding; 102. Secondary winding; 103. Magnetic core; 104. Mounting base.

[0022] The following detailed description, in conjunction with the accompanying drawings, will further illustrate this application. Detailed Implementation

[0023] In the description of the embodiments in this application, the words "exemplary," "or," and "for example" are used to indicate examples, illustrations, or descriptions. Any embodiment or design scheme described as "exemplary" or "for example" in the embodiments of this application should not be construed as being more preferred or advantageous than other embodiments or design schemes. Specifically, the use of the words "exemplary," "or," and "for example" is intended to present the relevant concepts in a specific manner.

[0024] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terminology used in this application's specification is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. It should be understood that, unless otherwise stated, " / " in this application means "or". For example, A / B can mean A or B. "And / or" in this application is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A alone, A and B simultaneously, and B alone. "At least one" refers to one or more. "More than one" refers to two or more. For example, at least one of a, b, or c can represent: a, b, c, a and b, a and c, b and c, and a, b, and c (seven cases).

[0025] It should also be noted that the terms "first" and "second" in the specification, claims, and drawings of this application are used to distinguish similar objects, not to describe a specific order or sequence. The methods disclosed in the embodiments of this application or the methods shown in the flowcharts include one or more steps for implementing the method. Without departing from the scope of the claims, the execution order of multiple steps can be interchanged, and some steps can also be deleted.

[0026] With the explosive growth in demand for AI computing power and the widespread adoption of high-power electricity consumption scenarios, medium- and high-frequency transformers, as core components for energy conversion and electrical isolation, are facing new challenges in stable operation at higher voltage levels (such as medium- and high-voltage power grid systems, and even tens of thousands of volts). Under high-frequency switching conditions, these transformers require efficient voltage transformation and safe isolation, making them widely applicable in solid-state transformers, smart grids, new energy power generation, and rail transportation. However, increasing the operating frequency exacerbates the skin effect and proximity effect, while higher voltage levels place stringent requirements on the insulation performance between windings. These two factors mutually constrain each other, making it difficult for traditional transformer designs to simultaneously achieve high efficiency and high insulation reliability.

[0027] Currently, to address insulation issues under high voltage, existing technologies generally employ high-strength insulating materials (such as insulating paper and insulating films) to cover the coils, and place shielding layers (such as copper foil) between the windings to suppress electric field distortion. While these solutions improve insulation withstand voltage to some extent, they often come at the cost of conversion efficiency. For example, excessively thick insulation layers increase leakage inductance and distributed capacitance, affecting high-frequency characteristics. Simultaneously, simply stacking insulating materials cannot effectively solve the core problems of insulation degradation caused by localized electric field concentration, surface charge accumulation, and thermal resistance effects under high voltage. In other words, although the metal shielding layer can modulate the electric field, its interface with the insulation layer is near the high-potential region of the conductor, and abrupt changes in the dielectric can still cause electric field distortion that may break down the insulation. Furthermore, increasing the thickness to improve insulation strength significantly increases thermal resistance, and the Joule heat generated by high-frequency losses cannot be effectively dissipated, forming hot spots, and long-term thermal stress accelerates the aging of the insulating material. Furthermore, even with the introduction of shielding materials, the shielding structure cannot achieve uniform control of the electric field across the entire spatial scale. Sudden changes in the potential gradient may still occur on the winding surface, leading to partial discharge or surface flashover. As a result, the insulation performance under high-frequency and high-voltage composite stress still cannot meet the requirements for long-term safe operation.

[0028] Therefore, this application provides a winding structure and transformer that can reduce the technical problem of poor insulation performance of winding structures under high-frequency, high-voltage combined stress in the prior art. Some embodiments will be described below with reference to the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0029] Figure 1 This is a schematic diagram of the overall appearance of the winding structure 1 according to an embodiment of this application. Figure 2 This application Figure 1 A simplified cross-sectional view of the winding structure 1 in the embodiment.

[0030] like Figure 1 As shown, this application first provides a winding structure 1, which can be used to manufacture a transformer 100, especially a medium-to-high frequency isolation transformer 100 (such as an isolation transformer 100 for voltage scenarios of 50,000 volts to 80,000 volts). Figure 2 As shown, the winding structure 1 may include a coil conductor 11, a wire-wrapped layer 12, a first insulating layer 13, a conductive metal layer 14, a first semiconductor layer 15, a second insulating layer 16, and a second semiconductor layer 17. The wire-wrapped layer 12 may be disposed on the outer surface of the coil conductor 11 to form a first coil, the first insulating layer 13 may be disposed on the outer surface of the first coil to form a second coil, the conductive metal layer 14 may be disposed on the second coil to form a third coil, the first semiconductor layer 15 may be disposed on the third coil to form a fourth coil, the second insulating layer 16 may be disposed on the fourth coil to form a fifth coil, and the second semiconductor layer 17 may be disposed on the outer surface of the fifth coil.

[0031] In some embodiments, the coil conductor 11 can be a stranded wire. In this case, the coil conductor 11 in the winding structure 1 is a stranded wire, which is a thick wire formed by twisting together multiple thin wires. Thus, the winding structure 1 made of coil conductor 11 in the form of stranded wire can significantly reduce skin effect and proximity effect losses under high-frequency current and improve conversion efficiency.

[0032] In some embodiments, "the silk sheath 12 is disposed on the outer surface of the coil wire 11 to form a first coil" can mean that the silk sheath 12 covers the outer surface of the coil wire 11 to form a first coil.

[0033] In some embodiments, the filament sheath 12 is made of one of the following materials: polyester fiber, polyimide fiber, polyetheretherketone (PEEK), ceramic-coated polyester, boron nitride nanosheet-reinforced epoxy resin, liquid crystal polymer, or aerogel composite paper. The filament sheath 12 is made of materials such as polyester fiber, polyimide fiber, PEEK, ceramic-coated polyester, boron nitride nanosheet-reinforced epoxy resin, liquid crystal polymer, or aerogel composite paper. In this case, the filament sheath 12 material possesses high heat resistance, high mechanical strength, and excellent dielectric properties, maintaining flexibility while tightly wound, providing a uniform and compact surface coating for the stranded wire. Furthermore, the selection of these materials allows the filament sheath 12 to not only provide basic insulation but also withstand temperature rise and electromagnetic mechanical stress under high-frequency operation, reducing inter-turn short circuits caused by insulation failure, thereby enhancing the durability and insulation stability of the winding structure 1 while ensuring high-frequency performance.

[0034] In some embodiments, "the first insulating layer 13 is disposed on the outer surface of the first coil to form the second coil" can mean that the first insulating layer 13 is disposed on the outer surface of the first coil in a ring-like manner to form the second coil. The first insulating layer 13 can be an insulating paper material selected from aramid-based, nanocellulose, intrinsically flexible proton exchange membrane, or self-healing insulating paper. In this case, the first insulating layer 13 uses insulating paper materials such as aramid-based, nanocellulose, intrinsically flexible proton exchange membrane, or self-healing insulating paper. The selected materials all have extremely high dielectric strength, tear resistance, and thermal stability, and some materials (such as self-healing insulating paper) also have the ability to automatically fill and repair minor damage. This structure allows the first insulating layer 13 to reliably withstand the potential difference between the coil and the subsequent conductive metal layer 14, preventing breakdown caused by local defects, while providing a smooth and uniform substrate surface for the subsequent electric field control layer.

[0035] In some embodiments, "the conductive metal layer 14 is disposed on the second coil to form a third coil" can mean that the conductive metal layer 14 is disposed around the second coil at a preset interval and a preset angle to form a third coil. The preset interval and preset angle are directly related to the equivalent distributed inductance and interlayer coupling capacitance at the operating frequency of the winding structure 1. In this case, the conductive metal layer 14 surrounding the second coil at the preset interval and angle means that the conductive metal layer 14 does not completely and continuously cover the second coil, but rather forms a grid-like or spiral structure with certain gaps. This discontinuous layout can reduce the formation of closed short-circuit loops while still providing electric field guidance.

[0036] In some embodiments, the preset intervals and angles can be optimized according to the voltage level, so that the conductive metal layer 14 can actively redistribute the high voltage electric field, guide the coil wire 11 along a predetermined path, and reduce the peak areas of excessively high local electric fields.

[0037] In some embodiments, the conductive metal layer 14 may be strip-shaped, and may be made of conductive copper foil, copper-nickel alloy foil, or composite copper foil. In this case, the conductive metal layer 14 in the winding structure 1 is arranged around the outside of the second coil at a preset interval and a preset angle to form a third coil, and the conductive metal layer 14 is strip-shaped, made of conductive copper foil, copper-nickel alloy foil, or composite copper foil. The strip shape facilitates winding, and the high conductivity of the conductive copper material ensures the immediacy and effectiveness of electric field control, thereby reducing the maximum electric field strength on the winding surface and suppressing the occurrence of corona discharge.

[0038] In some embodiments, "the first semiconductor layer 15 is disposed on the third coil to form the fourth coil" can mean that the first semiconductor layer 15 is disposed on the third coil in a ring-like manner to form the fourth coil. The first semiconductor layer 15 can be made of an intrinsic semiconductor resin or a doped functional material. In this case, the first semiconductor layer 15 in the winding structure 1 is disposed on the outside of the third coil in a ring-like manner to form the fourth coil, and an intrinsic semiconductor resin or a doped functional material is used. The ring-like manner allows the first semiconductor layer 15 to completely cover the conductive metal layer 14, and by utilizing the nonlinear resistance characteristics of the semiconducting material, the potential of the edge and surface of the conductive metal layer 14 can be smoothly transitioned axially, reducing potential steps caused by discontinuities in the metal layer, forming an electric field with zero surface potential drop, and improving the uniformity of electric field control.

[0039] In some embodiments, "the second insulating layer 16 is disposed on the fourth coil to form the fifth coil" can mean that the second insulating layer 16 is disposed on the fourth coil by casting to form the fifth coil. The second insulating layer 16 can be one of the following materials: highly thermally conductive modified epoxy resin, nano-composite ceramic epoxy, liquid crystal polymer-based thermally conductive plastic, silicone gel, or polyurethane composite material. In this case, the second insulating layer 16 in the winding structure 1 is disposed on the outside of the fourth coil by casting to form the fifth coil. This allows the insulating material to fill the area around and gaps of the fourth coil in a liquid or molten state, and after curing, forms an air-gap-free integral insulator that is tightly bonded to the internal layers, reducing the risk of partial discharge caused by air gaps. Furthermore, the second insulating layer 16, made of highly thermally conductive modified epoxy resin, nano-composite ceramic epoxy, liquid crystal polymer-based thermally conductive plastic, silicone gel, or polyurethane composite material, possesses both high insulation strength and good thermal conductivity, enabling it to quickly conduct the heat generated during coil operation to the outside while withstanding a high-voltage electric field, reducing insulation aging caused by heat accumulation. This cast-type insulation layer not only serves as the main insulation to bear most of the voltage stress, but also plays multiple roles in mechanical fixation and heat dissipation, enabling the winding structure 1 to maintain comprehensive thermal-electrical-mechanical stability under high voltage and high frequency conditions.

[0040] In some embodiments, the thickness of the second insulating layer 16 from its own surface to the surface of the first semiconductor layer 15 can be greater than the thickness of the coil conductor 11. For example, the thickness of the second insulating layer 16 from its own surface to the surface of the first semiconductor layer 15 can be 2 to 3 times the thickness of the coil conductor 11. In this case, this thickness relationship ensures that the second insulating layer 16, as the main insulating layer, occupies a dominant size in the radial direction, allowing a sufficiently wide insulation barrier to be established around the coil conductor 11 to increase the creepage distance and breakdown path length. When a high voltage is applied, the electric field strength attenuates more fully with distance in the thicker second insulating layer 16, effectively pushing away the high field strength region near the surface of the coil conductor 11, thereby reducing the electrical stress per unit thickness of the insulating material. Since the thickness of the second insulating layer 16 is greater than the overall size of the coil conductor 11, even if the coil conductor 11 undergoes a small displacement due to high-frequency vibration or thermal expansion, it will not significantly change the insulation distance margin, thus providing robust overvoltage protection for the winding and reducing insulation penetration in scenarios such as lightning strikes or operational overvoltages.

[0041] In some embodiments, "the second semiconductor layer 17 is disposed on the outer surface of the fifth coil" can mean that the second semiconductor layer 17 is disposed on the outer surface of the fifth coil by coating. The second semiconductor layer 17 can also be made of an intrinsic semiconductor resin or a doped functional material. In this case, the second semiconductor layer 17 is disposed on the outer surface of the fifth coil by coating, i.e., the outermost second semiconductor layer 17, forming a continuous semiconductive coating on the outer surface of the fifth coil. This confines the surface potential within a uniform range, reducing localized accumulation of surface charge due to external contamination or moisture. Furthermore, by using an intrinsic semiconductor resin or a doped functional material, similar to the first semiconductor layer 15, and utilizing the nonlinear resistance characteristics of the semiconductive material, the potential at the edge and surface of the fifth coil can smoothly transition along the axial direction, reducing potential steps caused by surface discontinuities, forming an electric field with zero surface potential drop, and improving the uniformity of electric field modulation.

[0042] In the embodiments of this application, the first semiconductor layer 15 and the second semiconductor layer 17 participate in electric field homogenization from the inside and outside, respectively, so that the entire potential drop process from the high-voltage conductor to the ground terminal presents a linear and uniform distribution, thereby maximally suppressing the probability of surface flashover and partial discharge.

[0043] In some embodiments, the fifth coil coated with the second semiconductor layer 17 may also be covered with plastic to protect the second semiconductor layer 17.

[0044] Figure 3 This is a simplified cross-sectional view of the coil conductor 11 according to an embodiment of this application.

[0045] In some embodiments, such as Figure 3 As shown, the coil conductor 11 can be formed by winding multiple coils 201 with their surfaces covered by a silk sheath 12 in a disc-like manner. These coils 201 are stacked and connected in series. In this case, the coil conductor 11 in the winding structure 1 is formed by stacking and connecting multiple coils 201 with their surfaces covered by a silk sheath 12 in a disc-like manner. The disc-like winding method allows for a more regular inter-turn spacing and inter-layer layout within each coil 201, which helps reduce distributed capacitance and leakage inductance. The stacked and connected coils 201 distribute the total voltage across each coil 201, reducing the concentration of voltage on a single continuous winding segment. Simultaneously, the series connection of the coils 201 ensures the continuity of the current path, while the stacked structure allows for the introduction of additional insulation or electric field control measures between adjacent coils 201, further reducing the inter-layer voltage gradient and making the high-voltage stress distribution along the axial direction more uniform, effectively preventing insulation breakdown caused by local overvoltage.

[0046] To clarify the structural definition, the assembly of multiple coils 201 stacked and connected in series after being covered by the wire sheath 12 can be referred to as the first coil. That is, the first coil can be formed by integrating discrete coil units 201 in series in the axial direction, and the coil units 201 form a continuous conductive path in the stacking direction.

[0047] It can be understood that the first insulating layer 13 is disposed on the outer surface of the first coil in a ring-wrapping manner to form the second coil. That is, the first insulating layer 13 can be disposed in a ring-wrapping manner on an assembly of multiple coils 201 stacked and connected in series after being covered by the silk-wrapped layer 12. The ring-wrapping manner means that the first insulating layer 13 completely wraps the entire coil assembly, which can improve the insulation coverage of the weak insulation points at the ends and sides of the first coil, so that the entire first coil unit obtains a continuous and seamless insulation barrier.

[0048] In the winding structure 1 of this application, a wire-wrapped layer 12, a first insulating layer 13, a conductive metal layer 14, a first semiconductor layer 15, a second insulating layer 16, and a second semiconductor layer 17 are sequentially disposed outside the coil conductor 11 to form a multi-layer composite structure. The wire-wrapped layer 12 first provides basic insulation protection for the conductor and reduces eddy current losses at high frequencies; the first insulating layer 13 provides a primary high-voltage isolation barrier, preventing direct electrical contact between the conductor and subsequent layers; the conductive metal layer 14, as an electric field control layer, guides and homogenizes the potential distribution around the winding, suppressing local electric field concentration; the first semiconductor layer 15 is closely attached to the conductive metal layer 14, utilizing its semi-conductive properties to make the surface potential tend to be continuous and smooth, reducing potential jumps caused by metal layer edges or gaps, and achieving an electric field distribution with near-zero surface drop; the second insulating layer 16 constitutes the main insulation thickness and bears most of the voltage stress; the outermost second semiconductor layer 17 further homogenizes the outer surface electric field and reduces surface discharge. The sequential synergistic effect of each layer allows for a gradual and smooth transition in the electric field distribution within and on the surface of the entire winding structure 1 from the coil conductor 11 to the outside. This improves the overall insulation reliability and dielectric strength of the winding structure 1 under high-frequency, high-voltage conditions. In other words, this application utilizes a multi-layered composite structure to enhance the insulation performance of the winding structure 1 under high-frequency, high-voltage combined stress.

[0049] Figure 4 This is a schematic diagram of the structure of the transformer 100 according to an embodiment of this application. Figure 5 This is a schematic diagram of the structure of a transformer 100 according to another embodiment of this application.

[0050] like Figure 4 or Figure 5 As shown, this application also provides a transformer 100, which can be a medium-to-high frequency isolation transformer 100, such as an isolation transformer 100 for voltage scenarios ranging from 50,000 volts to 110,000 volts. Figure 4 or Figure 5 As shown, the transformer 100 may include a primary winding 101, a secondary winding 102, and a magnetic core 103. The primary winding 101 and / or the secondary winding 102 is the winding structure 1 of any one of the above embodiments of the present application. Among them, the cross-section of the magnetic core 103 may be in the shape of a "day". The primary winding 101 and the secondary winding 102 may be respectively wound around the middle column of the "day"-shaped magnetic core 103. The primary winding 101 may be one, and the secondary winding 102 may be two, and the primary winding 101 is located between the two secondary windings 102.

[0051] By applying the winding structure 1 to the primary side or the secondary side of the transformer 100 (or using both sides simultaneously), at least one voltage-bearing side of the transformer 100 can have the ability of multi-layer electric field homogenization and insulation enhancement. Under the magnetic circuit coupling provided by the magnetic core 103, this winding structure 1 can safely transfer energy from the primary to the secondary while withstanding medium and high-frequency high-voltage composite stresses; since the winding structure 1 itself has optimized the electric field distribution through the conductive metal layer 14 and multi-layer semiconductor layers, the overall transformer 100 can achieve a compact design without additional complex shielding devices, can reduce the volume and weight, and at the same time can improve the anti-electrical aging life and operation reliability, and is particularly suitable for occasions such as isolation transformers 100 and solid-state transformers 100 that require high-voltage isolation.

[0052] In some embodiments, as Figure 4 or Figure 5 shown, the transformer 100 may further include a mounting base 104. The magnetic core 103 is disposed on the mounting base 104, and the orientation of the mounting base 104 is parallel to the axial direction of the primary winding 101 (i.e., Figure 4 shown) or perpendicular (i.e., Figure 5 shown). In this case, the mounting base 104 can provide a stable mechanical support for the magnetic core 103. At the same time, by adjusting the relationship between the orientation of the mounting base 104 and the axial direction of the primary winding 101, different overall machine assembly requirements can be flexibly matched. When the orientation of the mounting base 104 is parallel to the winding axis, the main magnetic path direction of the magnetic core 103 is consistent with the winding axis, which is beneficial to reducing the leakage magnetic flux and increasing the coupling coefficient; when the two are perpendicular, it is convenient to arrange multiple windings or heat dissipation channels in a limited space. This optional orientation design enables the transformer 100 to adapt to various installation layouts without affecting the insulation performance of the winding structure 1 itself, and at the same time the mounting base 104 can further integrate the grounding or heat dissipation function, assisting in improving the overall electrical safety and thermal management capabilities from the structural level.

[0053] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application and are not intended to limit it. Although this application has been described in detail with reference to preferred embodiments, those skilled in the art should understand that modifications or equivalent substitutions can be made to the technical solutions of this application without departing from the spirit and scope of the technical solutions of this application.

Claims

1. A winding structure, characterized in that, The device includes a coil conductor, a wire sheath, a first insulating layer, a conductive metal layer, a first semiconductor layer, a second insulating layer, and a second semiconductor layer. The wire sheath is disposed on the outer surface of the coil conductor to form a first coil. The first insulating layer is disposed on the outer surface of the first coil to form a second coil. The conductive metal layer is disposed on the second coil to form a third coil. The first semiconductor layer is disposed on the third coil to form a fourth coil. The second insulating layer is disposed on the fourth coil to form a fifth coil. The second semiconductor layer is disposed on the outer surface of the fifth coil.

2. The winding structure according to claim 1, characterized in that, The coil conductor is a coil obtained by winding multiple coils in a disc-like manner after the surface is covered by the wire sheath. The multiple coils are stacked on top of each other and connected in series.

3. The winding structure according to claim 1 or 2, characterized in that, The coil conductor is a stranded wire; the filament sheath is made of one of the following materials: polyester fiber, polyimide fiber, polyetheretherketone, ceramic-coated polyester, boron nitride nanosheet reinforced epoxy resin, liquid crystal polymer, or aerogel composite paper.

4. The winding structure according to claim 2, characterized in that, The first coil is defined as a plurality of stacked and connected coils. The second coil is formed by the first insulating layer being disposed on the outer surface of the first coil in a ring-wrapping manner. The first insulating layer is an insulating paper material selected from aramid, nanocellulose, intrinsic flexible proton membrane or self-healing insulating paper.

5. The winding structure according to claim 1, characterized in that, The conductive metal layer is arranged around the second coil at a preset interval and a preset angle to form the third coil; wherein, the conductive metal layer is strip-shaped and is made of one of the following materials: conductive copper foil, copper-nickel alloy foil, or composite copper foil.

6. The winding structure according to claim 1, characterized in that, The second insulating layer is disposed on the fourth coil by casting to form the fifth coil; wherein, the second insulating layer is one of the following materials: high thermal conductivity modified epoxy resin, nanocomposite ceramic epoxy, liquid crystal polymer-based thermally conductive plastic, organosilicon gel or polyurethane composite material.

7. The winding structure according to claim 6, characterized in that, The thickness of the second insulating layer from its own surface to the surface of the first semiconductor layer is greater than the thickness of the coil wire.

8. The winding structure according to claim 1, characterized in that, The first semiconductor layer is disposed on the third coil in a ring-shaped manner to form the fourth coil; the second semiconductor layer is disposed on the outer surface of the fifth coil by coating; wherein, the first semiconductor layer is a material selected from intrinsic semiconductor resin or doped functional material, and the second semiconductor layer is a material selected from intrinsic semiconductor resin or doped functional material.

9. A transformer, characterized in that, It includes a primary winding, a secondary winding, and a magnetic core, wherein the primary winding and / or the secondary winding are winding structures as described in any one of claims 1 to 8.

10. The transformer according to claim 9, characterized in that, It also includes a mounting base, on which the magnetic core is disposed, and the mounting base is oriented parallel or perpendicular to the axis of the primary winding.

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