Flexible self-rectification memory and preparation method and application thereof

By using a stacked structure of a flexible substrate, a Ti3C2Tx charge trapping layer, and a polydiallyldimethylammonium chloride buffer switch layer, the problems of untunable self-rectification characteristics and poor reliability of self-rectified memory are solved, achieving high-density storage and crosstalk suppression, which is suitable for neuromorphic computing and flexible wearable electronics.

CN122294504APending Publication Date: 2026-06-26HUBEI UNIV
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Patent Information

Application Number
CN202610278481.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2026-03-09
Publication Date
2026-06-26

AI Technical Summary

Technical Problem

Existing self-rectifying memories suffer from problems such as unadjustable self-rectification characteristics, poor reliability, and insufficient flexibility and compatibility. Furthermore, existing RRAMs face challenges in high-density storage and crosstalk suppression.

Method used

A stacked structure consisting of a flexible substrate, a Ti3C2Tx charge trapping layer, and a polydiallyldimethylammonium chloride buffer switch layer is prepared by spin coating. Combining oxygen ion adsorption sites and a nanoporous structure, it achieves tunable self-rectification characteristics and high reliability.

Benefits of technology

It achieves adjustable self-rectification characteristics, significant crosstalk suppression, and high device reliability, making it suitable for neuromorphic computing and flexible wearable electronics, with excellent performance and a wide range of applications.

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Abstract

The invention provides a flexible self-rectification memory and a preparation method and application thereof. According to the flexible self-rectification memory, the poly (diallyldimethylammonium chloride) buffer switch layer serves as an active switch medium, and a quaternary ammonium salt functional group of the poly (diallyldimethylammonium chloride) buffer switch layer provides oxygen ion adsorption sites to promote aggregation and movement of oxygen ions; the Ti < 3 > C < 2 > T < x > charge trapping layer realizes efficient charge trapping by virtue of a large interlayer spacing and a nanoporous structure; according to the flexible self-rectification memory, the self-rectification characteristic is adjustable, and the crosstalk suppression effect is remarkable. The preparation method is simple in process and low in cost. The composite advantage of the polymer layer and the inorganic substance layer not only embodies the reservation of the flexible characteristic of the material, but also shows the innovativeness of high performance such as self-rectification adjustability and the like. The flexible self-rectifying memory disclosed by the invention shows huge application potential in high-density and super-large-scale parallel memory arrays suffered from sneak current troubles and learning of nerve synaptic plasticity.
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