Magnetoresistive detection device

Abstract

This invention provides a magnetoresistive detection device, comprising: a substrate (2) having a reference surface (2a); wherein the reference surface (2a) includes a first plurality of tilted surfaces (2a1) and a second plurality of tilted surfaces (2a2); a plurality of MR elements (3) having resistors, wherein the plurality of MR elements include MR elements of first, second, third and fourth types; a first bridge circuit (4) having a first branch (4a) and a second branch (4b), wherein not only the first branch (4a) but also the second branch (4b) has a first resistor (4a1, 4b1) and a second resistor (4a2, 4b1). The resistors 4b2, 4a3, 4b3 and 4a4, 4b4 are connected in series in the order described, wherein each of the resistors (4a1-4a4, 4b1-4b4) includes at least one of a plurality of MR elements (3) of the same type (3a1, 3a2, 3b1, 3b2), the at least one MR element being arranged on the same inclined surface in the first and second inclined surfaces (2a1-2a2), wherein the MR elements (3) of at least two of the first, second, third and fourth resistors (4a1-4a4, 4b1-4b4) are arranged on opposite inclined surfaces (2a1-2a2).

Description

Technical Field

[0001] This invention provides a magnetoresistive detection device. Background Technology

[0002] This invention relates to the field of integrated magnetometers, and more particularly to a device based on magnetoresistive (MR) technology, such as magnetoresistive tunneling technology.

[0003] Magnetic detection equipment can measure magnetic fields from various sources, such as biomagnetic fields, geomagnetic fields, electric currents, and permanent magnets. Magnetometers capable of performing 3D geomagnetic field measurements can provide absolute orientation and have therefore become key components in applications such as today's outdoor / indoor navigation and AR / VR devices.

[0004] One of the design challenges of magnetic sensors for 3D magnetic field detection lies in their ability to simultaneously measure both in-plane and out-of-plane magnetic fields. Typical MR sensors, such as anisotropic MR sensors, giant magnetoresistive sensors (Riesen-MR-Sensoren), and tunneling magnetoresistive MR sensors, can detect either the in-plane or out-of-plane components of the magnetic field applied to the MR sensing element.

[0005] Different techniques have been proposed to integrate triaxial sensing elements into a single housing. One approach for achieving 3D magnetic field measurements using a tilted substrate has attracted particular attention. The structure, referred to as a mound, is essentially a "mound-like" structure integrated onto a planar substrate, with the magnetic sensing element constructed on the side of the substrate.

[0006] By constructing MR sensing elements on both planar and tilted substrates, the in-plane magnetic field (i.e., along the X and Y axes) can be measured using sensing elements constructed not only on the planar substrate but also on the tilted substrate, while the out-of-plane magnetic field (i.e., along the Z axis) can only be measured using a sensing element constructed on the tilted substrate. Therefore, the decoupling of crosstalk between the measured in-plane and out-of-plane components of the magnetic field determines the accuracy of the magnetic sensor.

[0007] To achieve triaxial detection of 3D magnetic fields, an MR magnetic sensor with at least three bridge circuits has been realized. US11493567B2 describes a magnetic sensor device having a first chip and a second chip, wherein the first chip has a first magnetic sensor, and the second chip has a second magnetic sensor and a third magnetic sensor. Summary of the Invention

[0008] The present invention provides a magnetoresistive detection device according to claim 1.

[0009] According to the present invention, a magnetoresistive detection device is provided. The magnetoresistive detection device includes: a substrate having a reference surface; wherein the reference surface includes a first plurality of inclined surfaces and a second plurality of inclined surfaces, the first plurality of inclined surfaces and the second plurality of inclined surfaces extending along a first direction orthogonal to a normal direction, the normal direction being orthogonal to the reference surface, wherein each surface of the first plurality of inclined surfaces is opposite to a surface of the second plurality of inclined surfaces, wherein the first plurality of inclined surfaces and the second plurality of inclined surfaces have an inclination relative to the reference surface; a plurality of MR elements having resistance, wherein the plurality of MR elements includes MR elements of first, second, third and fourth types, wherein for a magnetic field in a second direction orthogonal to the first direction and the normal direction, the resistance of the first and fourth types of MR elements increases, and the resistance of the second and third types of MR elements decreases, wherein for a magnetic field in the normal direction... The magnetic field increases the resistance of the third and fourth type MR elements, while the resistance of the first and second type MR elements decreases; a first bridge circuit has a first branch and a second branch, wherein not only the first branch but also the second branch has a series connection of a first resistor, a second resistor, a third resistor and a fourth resistor in sequence, wherein for each of the two branches, a first voltage is provided between the first resistor and the second resistor, a second voltage is provided between the second resistor and the third resistor, and a third voltage is provided between the third resistor and the fourth resistor, wherein each resistor includes at least one MR element of a plurality of MR elements of the same type, the at least one MR element being arranged on the same inclined surface of the first and second inclined surfaces, wherein the MR elements of at least two of the first, second, third and fourth resistors are arranged on opposing inclined surfaces.

[0010] Advantageous embodiments and improvements of the invention are described in the dependent claims.

[0011] Advantages of the present invention The concept of this invention lies in replacing the third bridge with a smart connection and distribution of MR elements in the form of a bridge circuit. Therefore, a converter solution with two bridges and three front-end circuits is described herein, wherein the bridges have good SNR.

[0012] It should be understood that the first to fourth tilted surfaces have similar tilt angles relative to the reference surface, meaning that the tilt angles of the first to fourth tilted surfaces are the same within approximately 10 degrees. The first to fourth tilted surfaces differ from each other in their orientation, as described above. Additionally, the tilted surfaces may form mounds or valleys relative to the reference surface of the substrate.

[0013] According to a preferred embodiment of the invention, the substrate includes a third plurality of tilted surfaces and a fourth plurality of tilted surfaces, which extend along a second direction orthogonal to the first direction and the normal direction, respectively, wherein the third plurality of tilted surfaces are opposite to the fourth plurality of tilted surfaces, and wherein the third plurality of tilted surfaces and the fourth plurality of tilted surfaces have a tilt relative to a reference surface; the magnetoresistive sensing device further includes: a second bridge having a first branch and a second branch, wherein not only the first branch but also the second branch has a series connection of a first resistor, a second resistor, a third resistor, and a fourth resistor in sequence, wherein for each of the two branches, a first voltage is provided between the first resistor and the second resistor, a second voltage is provided between the second resistor and the third resistor, and a third voltage is provided between the third resistor and the fourth resistor, wherein each resistor includes at least one MR element from a plurality of MR elements of the same type, the at least one MR element being arranged on the same tilted surface of the first and second plurality of tilted surfaces, wherein the MR elements of at least two of the first, second, third, and fourth resistors are arranged on opposite tilted surfaces. In this manner, the magnetic field in the first direction can be measured with high precision.

[0014] According to a preferred embodiment of the present invention, a plurality of MR elements are configured as TMR elements, wherein each TMR element includes a magnetic layer and a free layer, the magnetic layer having a fixed reference magnetization direction, and the free layer having a magnetization direction that can be changed by an external electric field, wherein a first type of TMR element is magnetized upward parallel to its corresponding reference magnetization along the gradient of the inclination of a corresponding first or third plurality of inclined surfaces, wherein a second type of TMR element is magnetized upward parallel to its corresponding reference magnetization along the gradient of the inclination of a corresponding second or fourth plurality of inclined surfaces, wherein a third type of TMR element is magnetized downward parallel to the gradient of the inclination of a corresponding first or third plurality of inclined surfaces, and wherein a fourth type of TMR element is magnetized downward parallel to its corresponding reference magnetization along the gradient of the inclination of a corresponding second and fourth plurality of inclined surfaces.

[0015] According to a preferred embodiment of the present invention, the MR element of each of the first, second, third and fourth resistors is arranged on the same inclined surface of the first, second, third and fourth plurality of inclined surfaces, and wherein the MR elements of two of the first, second, third and fourth resistors are arranged on opposite inclined surfaces.

[0016] According to a preferred embodiment of the present invention, for each of the first bridge circuits in the first bridge circuit, the first voltage of the first branch forms the positive polarity of the first differential voltage signal, wherein the first voltage of the second branch forms the negative polarity of the first differential voltage signal, wherein the third voltage of the first branch forms the negative polarity of the second differential voltage signal, and the third voltage of the second branch forms the positive polarity of the second differential voltage signal, wherein the second voltage of the first branch forms the positive polarity of the third differential voltage signal, and the second voltage of the second branch forms the negative polarity of the third differential voltage signal, wherein for each of the second bridge circuits in the second bridge circuit, the first voltage of the first branch forms the positive polarity of the fourth differential voltage signal, the first voltage of the second branch forms the negative polarity of the fourth differential voltage signal, the third voltage of the first branch forms the negative polarity of the fifth differential voltage signal, and the third voltage of the second branch forms the positive polarity of the fifth differential voltage signal, wherein the second voltage of the first branch forms the positive polarity of the sixth differential voltage signal, and the second voltage of the second branch forms the negative polarity of the sixth differential voltage signal.

[0017] According to a preferred embodiment of the present invention, for the first and second bridge circuits, the MR element of the second resistor in the first branch and the MR element of the fourth resistor in the second branch are of the first type, the MR element of the first resistor in the first branch and the MR element of the third resistor in the second branch are of the second type, the MR element of the fourth resistor in the first branch and the MR element of the second resistor in the second branch are of the third type, and the MR element of the third resistor in the first branch and the MR element of the first resistor in the second branch are of the fourth type.

[0018] According to a preferred embodiment of the present invention, a second differential voltage signal is added to a first differential voltage signal to provide a differential voltage X output; wherein a fifth differential voltage signal is added to a fourth differential voltage signal to provide a differential voltage Y output; and wherein a sixth differential voltage signal is added to a third differential voltage signal to provide a first differential voltage Z output. In this manner, the values ​​of the magnetic field in the first and second directions can be derived.

[0019] According to a preferred embodiment of the invention, the first and second differential voltage signals are amplified in parallel by a pair of transconductance amplifiers to provide corresponding first and second differential current signals, wherein the first differential current signal is added to the second differential current signal to provide a differential current X output, and wherein the differential current X output is amplified by a transimpedance amplifier to provide a differential voltage X output. Adding currents instead of voltages is simpler, more reliable, and generally provides a more accurate added signal.

[0020] According to a preferred embodiment of the invention, the fourth and fifth differential voltage signals are amplified in parallel by a pair of transconductance amplifiers to provide corresponding fourth and fifth differential current signals, wherein the fourth differential current signal is added to the fifth differential current signal to provide a differential current Y output, and wherein the differential current Y output is amplified by a transimpedance amplifier to provide a differential voltage Y output.

[0021] According to a preferred embodiment of the invention, the third and sixth differential voltage signals are amplified by a pair of transconductance amplifiers to provide corresponding third and sixth differential current signals. The third differential current signal is then added to the sixth differential current signal to provide a first differential current Z-output. The first differential current Z-output is amplified by a transimpedance amplifier to provide a first differential voltage Z-output. In this manner, the value of the magnetic field in the normal direction can be derived.

[0022] According to a preferred embodiment of the invention, the magnetoresistive detection device further includes a first switch designed for switching between first, third, and fourth differential voltage signals; a second switch designed for switching between second, fifth, and sixth signals; and a control device designed for controlling the first and second switches for time-division multiplexing between differential voltage X output, differential voltage Y output, and first differential voltage Z output via the same pair of transconductance amplifiers and transimpedance amplifiers.

[0023] According to a preferred embodiment of the present invention, a second differential voltage signal is subtracted from a first signal to provide a second differential voltage Z output, wherein a third differential voltage signal is subtracted from a fourth differential voltage signal to provide a third differential voltage Z output.

[0024] According to a preferred embodiment of the invention, the first and second differential voltage signals are amplified in parallel by a pair of transconductance amplifiers to provide corresponding first and second differential current signals, wherein the second differential current signal is subtracted from the first differential current signal to provide a second differential current Z output, wherein the second differential current Z output is amplified by a transimpedance amplifier to provide a second differential voltage Z output.

[0025] According to a preferred embodiment of the invention, the fourth and fifth differential voltage signals are amplified in parallel by a pair of transconductance amplifiers to provide corresponding fourth and fifth differential current signals, wherein the fifth differential current signal is subtracted from the fourth differential current signal to provide a third differential current Z output, wherein the third differential current Z output is amplified by a transimpedance amplifier to provide a third differential voltage Z output.

[0026] According to a preferred embodiment of the present invention, for a first bridge circuit, the MR element of the fourth resistor in the first branch and the MR element of the second resistor in the second branch are of a first type, the MR element of the first resistor in the first branch and the MR element of the third resistor in the second branch are of a second type, the MR element of the fourth resistor in the first branch and the MR element of the fourth resistor in the second branch are of a third type, and the MR element of the third resistor in the first branch and the MR element of the first resistor in the second branch are of a fourth type. For a second bridge circuit, the MR element of the third resistor in the first branch and the MR element of the first resistor in the second branch are of the first type, the MR element of the second resistor in the first branch and the MR element of the fourth resistor in the second branch are of the second type, the MR element of the first resistor in the first branch and the MR element of the third resistor in the second branch are of the third type, and the MR element of the fourth resistor in the first branch and the MR element of the second resistor in the second branch are of the fourth type.

[0027] According to a preferred embodiment of the present invention, a third differential voltage signal is amplified by a transconductance amplifier to provide a third differential current signal, wherein a third differential current signal is amplified by a transimpedance amplifier to provide a differential voltage X output, wherein a sixth differential voltage signal is amplified in parallel by a transconductance amplifier to provide a sixth differential current signal, wherein a sixth differential current signal is amplified by a transimpedance amplifier to provide a differential voltage Y output.

[0028] According to a preferred embodiment of the present invention, the second differential voltage signal is added to the first differential voltage signal, and the fourth and fifth differential voltage signals are subtracted from the first voltage signal to provide a differential voltage Z output.

[0029] According to a preferred embodiment of the present invention, the first, second, fourth, and fifth differential voltage signals are amplified in parallel by corresponding transconductance amplifiers to provide corresponding first, second, fourth, and fifth differential current signals, wherein the second differential current signal is added to the first differential current signal, and the fourth and fifth differential current signals are subtracted from the first differential current signal to provide a differential current Z output, wherein the differential current Z output is amplified by a transimpedance amplifier to provide a differential voltage Z output.

[0030] According to a preferred embodiment of the invention, at least one of the first, second, third, and fourth resistors in the first and second branches of the first and second bridge circuits includes a plurality of MR elements, wherein the magnetization direction of the free layer of one rounded half of the MR element of the same resistor is opposite to the magnetization direction of the free layer of the other rounded half of the MR element of the same resistor. This increases the accuracy of the measurement because noise from the free layer is compensated for.

[0031] According to a preferred embodiment of the invention, the magnetoresistive detection device further includes a third bridge circuit and a fourth bridge circuit. The third bridge circuit is identical to the first bridge circuit, but the MR element of the third bridge circuit has the opposite magnetization of the free layer of the corresponding TMR element. Similarly, the fourth bridge circuit is identical to the second bridge circuit, but the MR element of the fourth bridge circuit has the opposite magnetization of the free layer of the corresponding TMR element. This increases the measurement accuracy because noise from the free layer is compensated for.

[0032] According to a preferred embodiment of the invention, the substrate includes a plurality of mounds or valleys, each mound or valley comprising a first and a second surface or a third and a fourth surface opposite to each other, wherein adjacent resistors' MR elements are arranged on the same mound or valley. This increases the flexibility of the device's application on different types of substrates.

[0033] Advantageous implementation methods and other extensions are derived from the description with reference to the accompanying drawings. Attached Figure Description

[0034] The invention will now be described in more detail based on the embodiments given in the illustrative drawings, in which the following are applicable: Figure 1A-1B A schematic diagram of an MR element of a magnetoresistive detection device according to an embodiment of the present invention is shown; Figures 2A-2D A schematic diagram of an MR element of a magnetoresistive detection device according to an embodiment of the present invention is shown; Figure 3 A schematic diagram of a magnetoresistive detection device according to an embodiment of the present invention is shown; Figures 4A-4B A schematic diagram of a bridge circuit of a magnetoresistive detection device according to an embodiment of the present invention is shown; Figure 5 A schematic diagram of the front end of a magnetoresistive detection device according to an embodiment of the present invention is shown; Figure 6 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown; Figure 7 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown; Figure 8 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown; Figure 9 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown; Figures 10A-10BA schematic diagram of a bridge circuit of a magnetoresistive detection device according to another embodiment of the present invention is shown; Figure 11 A schematic diagram showing the front end of a magnetoresistive detection device according to another embodiment of the present invention; and Figure 12 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown.

[0035] In the accompanying drawings, identical elements, features, and components that have the same function or effect are given the same reference numerals—unless otherwise stated. Detailed Implementation

[0036] Figure 1A-1B A schematic diagram of the MR element of a magnetoresistive detection device according to an embodiment of the present invention is shown.

[0037] exist Figure 1A The image shows a substrate 2 having a reference surface 2a. The reference surface 2a includes a first plurality of inclined surfaces 2a1 and a second plurality of inclined surfaces 2a2, the first plurality of inclined surfaces and the second plurality of inclined surfaces extending along a first direction Y orthogonal to the normal direction Z, the normal direction Z being orthogonal to the reference surface 2a, as shown below. Figure 1B As shown. Each of the first plurality of inclined surfaces 2a1 is opposite to one of the second plurality of inclined surfaces 2a2. The first plurality of inclined surfaces 2a1 and the second plurality of inclined surfaces 2a2 have an inclination I relative to the reference surface 2a.

[0038] It should be understood that the first and second inclined surfaces 2a1, 2a2 have similar inclination I relative to the reference surface 2a, meaning that the inclination angle θ of the first and second inclined surfaces is the same within approximately 10 degrees. The inclination angle θ can have any value between approximately 10° and 80°, and is preferably approximately 30°. The first and second inclined surfaces 2a1, 2a2 are different from each other in their orientation because the first and second inclined surfaces are opposite each other, as described above. Although the first and second inclined surfaces 2a1, 2a2 are shown as mounds relative to the reference surface 2a, in another embodiment, the first and second inclined surfaces 2a1, 2a2 may form valleys relative to the reference surface 2a. These characteristics also apply to the third and fourth inclined surfaces 2a3, 2a4, which will be discussed below. Figure 2A As introduced in the text.

[0039] exist Figure 1B As shown in the figure, the magnetoresistive element, i.e., the MR element 3, is arranged on the first and second inclined surfaces 2a and 2b.

[0040] Figures 2A-2DA schematic diagram of the MR element of a magnetoresistive detection device according to an embodiment of the present invention is shown.

[0041] exist Figure 2A and Figure 2B As shown, the substrate 2 includes a third plurality of tilted surfaces 3a3 and a fourth plurality of tilted surfaces 2a4, which extend along a second direction X orthogonal to a first direction Y and a normal direction Z, respectively. The third plurality of tilted surfaces 2a3 and the fourth plurality of tilted surfaces 2a4 are opposite each other, wherein the third plurality of tilted surfaces 2a3 and the fourth plurality of tilted surfaces 2a4 have a tilt angle I relative to the reference surface 2a.

[0042] exist Figure 2C and Figure 2D As shown, the substrate 2 includes a first plurality of inclined surfaces 2a1 and a second plurality of inclined surfaces 2a2, which extend along a first direction Y orthogonal to the second direction X and the normal direction Z, respectively. The first plurality of inclined surfaces 2a1 are opposite to the second plurality of inclined surfaces 2a2. The first plurality of inclined surfaces 2a1 and the second plurality of inclined surfaces 2a2 have an inclination I relative to the reference surface 2a.

[0043] The plurality of resistive MR elements 3 include MR elements of first, second, third, and fourth types. For a magnetic field in a second direction X orthogonal to the first direction Y and the normal direction Z, the resistance of MR elements 3 of types 3a1 and 3b2 of the first to fourth types increases, while the resistance of MR elements 3 of types 3a2 and 3b1 of the second and third types decreases. For a magnetic field in the normal direction Z, the resistance of MR elements 3 of types 3b1 and 3b2 of the third and fourth types increases, while the resistance of MR elements 3 of types 3a1 and 3a2 of the first and second types decreases.

[0044] In this embodiment, the plurality of MR elements 3 are configured as TMR elements. Each TMR element 3 includes a magnetic layer and a free layer, the magnetic layer having a fixed reference magnetization direction Mref, and the free layer having a magnetization direction that can be changed by an external electric field.

[0045] The TMR element of the first type 3a1 is magnetized upwards in parallel with its corresponding reference magnetization Mref along the gradient of the inclination I of the corresponding first or third plurality of inclined surfaces 2a1, 2a3, wherein the TMR element of the second type 3a2 is magnetized upwards in parallel with its corresponding reference magnetization Mref along the gradient of the inclination I of the corresponding second or fourth plurality of inclined surfaces 2a2, 2a4, wherein the TMR element of the third type 3b1 is magnetized downwards in parallel with the gradient of the inclination I of the corresponding first or third plurality of inclined surfaces 2a1, 2a3, wherein the TMR element of the fourth type 3b2 is magnetized downwards in parallel with its corresponding reference magnetization Mref along the gradient of the inclination I of the corresponding second and fourth plurality of inclined surfaces 2a2, 2a4.

[0046] Figure 3 A schematic diagram of a magnetoresistive detection device according to an embodiment of the present invention is shown.

[0047] Figure 3 A first bridge circuit 4 is shown, which has a first branch 4a and a second branch 4b. Not only the first branch 4a, but also the second branch 4b has a series connection of first resistors 4a1, 4b1, second resistors 4a2, 4b2, third resistors 4a3, 4b3 and fourth resistors 4a4, 4b4 in sequence.

[0048] The MR element 3 of each of the first, second, third, and fourth resistors 4a1-4a4, 4b1-4b4, 5a1-5a4, and 5b1-5b4 is arranged on the same inclined surface among the first, second, third, and fourth plurality of inclined surfaces 2a1-2a4. The MR elements of two of the first, second, third, and fourth resistors 4a1-4, 4b1-4, 5a1-4, and 5b1-5 are arranged on opposite inclined surfaces 2a1-2a4.

[0049] The first resistors 4a1 and 4b1 of each branch 4a and 4b are connected to the current supply unit VTMR. The fourth resistors 4a4 and 4b4 of each branch are connected to ground GND.

[0050] Figures 4A-4B A schematic diagram of a bridge circuit of a magnetoresistive detection device according to an embodiment of the present invention is shown.

[0051] exist Figure 4A In the first, second, third and fourth resistors 4a1-4a4, 4b1-4b4, at least two of the MR elements 3 are arranged on opposite inclined surfaces 2a3, 2a4.

[0052] Each of the resistors 4a1-4a4 and 4b1-4b4 includes at least one MR element from a plurality of MR elements 3 of the same type 3a1, 3a2, 3b1, and 3b2, said at least one MR element being arranged on the same inclined surface in the first and second inclined surfaces 2a1-2a2.

[0053] For each of the two branches 4a and 4b, a first voltage 4aV1 and 4bV1 are provided between the first resistors 4a1 and 4b1 and the second resistors 4a2 and 4b2, a second voltage 4aV2 and 4bV2 are provided between the second resistors 4a2 and 4b2 and the third resistors 4a3 and 4b3, and a third voltage 4aV3 and 4bV3 are provided between the third resistors 4a3 and 4b3 and the fourth resistors 4a4 and 4b4.

[0054] For each first bridge circuit 4, the first resistors 4a1 and 4b1 of each branch 4a and 4b are connected to the current supply unit VTMR, wherein the fourth resistors 4a4 and 4b4 of each branch are connected to ground GND.

[0055] exist Figure 4B The diagram shows a second bridge circuit 5, which has a first branch 5a and a second branch 5b, wherein not only the first branch 5a but also the second branch 5b has a series connection of a first resistor 5a1, 5b1, a second resistor 5a2, 5b2, a third resistor 5a3, 5b3 and a fourth resistor 5a4, 5b4 in sequence.

[0056] for Figure 4B In the second bridge circuit 5 shown, at least two of the first, second, third and fourth resistors 5a1-5a4 and 5b1-5b4, MR elements 3 are arranged on opposite inclined surfaces 2a1 and 2a2.

[0057] For each of the two branches 5a and 5b, a first voltage 5aV1 and 5bV1 are provided between the first resistors 5a1 and 5b1 and the second resistors 5a2 and 5b2, a second voltage 5aV2 and 5bV2 are provided between the second resistors 5a2 and 5b2 and the third resistors 5a3 and 5b3, and a third voltage 5aV3 and 5bV3 are provided between the third resistors 5a3 and 5b3 and the fourth resistors 5a4 and 5b4.

[0058] Each of the resistors 5a1-5a4 and 5b1-5b4 includes at least one MR element from a plurality of MR elements 3 of the same type 3a1, 3a2, 3b1, and 3b2, said at least one MR element being arranged on the same inclined surface in the third and fourth plurality of inclined surfaces 2a3-2a4.

[0059] For each second bridge circuit 5, the first resistors 5a1 and 5b1 of each branch 4a and 4b are connected to the current supply section VTMR, wherein the fourth resistors 4a4 and 4b4 of each branch are connected to ground GND.

[0060] For both the first and second bridge circuits 4 and 5, the MR elements of the second resistors 4a2 and 5a2 in the first branch 4a and 5a and the fourth resistors 4b4 and 5b4 in the second branch 4b and 5b are of type 3a; the MR elements of the first resistors 4a1 and 5a1 in the first branch 4a and 5a and the third resistors 4b3 and 5b3 in the second branch 4b and 5b are of type 3a2; the MR elements of the fourth resistors 4a4 and 5a4 in the first branch 4a and 5a and the second resistors 4b2 and 5b2 in the second branch 4b and 5b are of type 3b1; and the MR elements of the third resistors 4a1 and 5a1 in the first branch 4a and 5a and the first resistors 4b3 and 5b3 in the second branch 4b and 5b are of type 3b2.

[0061] In particular, for the first and second bridge circuits 4 and 5, the MR elements of the second resistors 4a2 and 5a2 of the first branch 4a and 5a and the fourth resistors 4b4 and 5b4 of the second branch 4b and 5b are of type 3a1; the MR elements of the first resistors 4a1 and 5a1 of the first branch 4a and 5a and the third resistors 4b3 and 5b3 of the second branch 4b and 5b are of type 3a2; the MR elements of the fourth resistors 4a4 and 5a4 of the first branch 4a and 5a and the second resistors 4b2 and 5b2 of the second branch 4b and 5b are of type 3b1; and the MR elements of the third resistors 4a1 and 5a1 of the first branch 4a and 5a and the first resistors 4b3 and 5b3 of the second branch 4b and 5b are of type 3b2.

[0062] Figure 5 A schematic diagram of the front end of a magnetoresistive detection device according to an embodiment of the present invention is shown.

[0063] For each of the first bridge circuits in the first bridge circuit 4, the first voltage 4aV1 of the first branch 4a forms the positive polarity of the first differential voltage signal SV1. The first voltage 4bV1 of the second branch 4a forms the negative polarity of the first differential voltage signal SV1. The third voltage 4aV3 of the first branch 4a forms the negative polarity of the second differential voltage signal SV2, and the third voltage 4bV3 of the second branch 4b forms the positive polarity of the second differential voltage signal SV2.

[0064] In this embodiment, the second differential voltage signal SV2 is added to the first differential voltage signal SV1 to provide a differential voltage output DVX.

[0065] Specifically, the first and second differential voltage signals SV1 and SV2 are amplified in parallel by a pair of transconductance amplifiers A1 and A2 to provide corresponding first and second differential current signals SI1 and SI2. The first differential current signal SI1 is added to the second differential current signal SI2 to provide a differential current output DIX, wherein the differential current output DIX is amplified by a transimpedance amplifier B to provide a differential voltage output DVX.

[0066] Therefore, in the first amplification step, voltage is converted into current for summation. For this purpose, the first voltage 4aV1 of the first branch 4a of the first bridge circuit 4 is amplified as the positive polarity of the first transconductance amplifier A1 in the pair of transconductance amplifiers A1 and A2, thus providing the first amplified current 4aI1. The first voltage 4baV1 of the second branch 4b of the first bridge circuit 4 is amplified as the negative polarity of the first differential voltage signal SV1, thus providing the first amplified current 4bI1. The first amplified currents 4aI1 and 4bI1 thus form the first differential current signal SI1.

[0067] Similarly, through the positive polarity of the second transconductance amplifier A2 in the pair of transconductance amplifiers A1 and A2, the third voltage 4aV3 of the second branch 4b of the first bridge circuit 4 is amplified as the positive polarity of the second differential voltage signal SV2, so as to provide the third amplified current 4bI3. Through the negative polarity of the second transconductance amplifier A2, the third voltage 4baV3 of the first branch 4a of the first bridge circuit 4 is amplified as the negative polarity of the second differential voltage signal SV2, so as to provide the third amplified current 4bI3. The third amplified currents 4aI3 and 4bI3 thus form the second differential current signal SI2.

[0068] The addition of the first and second differential current signals SI1 and SI2 is achieved as follows: at node NXa, the positive polarities of the first and second differential current signals, i.e., the first amplified current 4aI1 and the third amplified current 4bI3, are added to provide the first added current DIXa; at node NXb, the first amplified current 4bI1 and the third amplified current 4aI3 are added to provide the second added current DIXb. The first and second currents DIXa and DIXb thus form the differential current X output DIX.

[0069] In the second amplification step, the summed currents DIXa and DIXb of the differential current output DIX are converted back into a differential voltage. For this purpose, the first summed current DIXa is amplified by the positive polarity of the transimpedance amplifier B, which includes a first resistor Ra, to provide a first amplified X voltage DVXa. The second summed current DIXb is amplified by the negative polarity of the transimpedance amplifier B, which includes a second resistor Rb, to provide a second amplified X voltage DVXb. The first and second amplified X voltages DVXa and DVXb form the differential voltage output DVX.

[0070] It should be understood that the difference in amplification between the first and second transconductance amplifiers A1 and A2 is very small, preferably less than 1%. Furthermore, the amplification of the transimpedance amplifier B in both polarities is determined by the first and second resistors Ra and Rb, and is very small, preferably less than 1% respectively.

[0071] Figure 6 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown.

[0072] For the second bridge circuit 5, the first voltage 5aV1 of the first branch 5a forms the positive polarity of the fourth differential voltage signal SV4, and the first voltage 5bV1 of the second branch 5b forms the negative polarity of the fourth differential voltage signal SV4. Additionally, the third voltage 5aV3 of the first branch 5a forms the negative polarity of the fifth differential voltage signal SV5, and the third voltage 5bV3 of the second branch 5b forms the positive polarity of the fifth differential voltage signal SV5.

[0073] The fifth differential voltage signal SV5 is added to the fourth differential voltage signal SV4 to provide the differential voltage output DVY.

[0074] In particular, the fourth and fifth differential voltage signals SV4 and SV5 are amplified in parallel by a pair of transconductance amplifiers A1 and A2 to provide corresponding fourth and fifth differential current signals SI4 and SI5. The fourth differential current signal SI4 and the fifth differential current signal SI5 are added to provide a differential current output DIY. The differential current output DIY is amplified by a transimpedance amplifier B to provide a differential voltage output DVY.

[0075] To achieve the differential voltage output DVY, the amplification and summation of the fourth and fifth differential voltage signals SV4 and SV5 are performed in a similar manner to the amplification and summation of the first and second differential voltage signals SV1 and SV2 to achieve the differential voltage output DVX, as described above. Figure 5 As described. The voltage and current involved can be directly obtained from... Figure 6 I learned this from the middle.

[0076] Figure 7 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown.

[0077] The second voltage 4aV2 of the first branch 4a forms the positive polarity of the third differential voltage signal SV3, and the second voltage 4bV2 of the second branch 5b forms the negative polarity of the third differential voltage signal SV3.

[0078] For each of the second bridge circuits in the second bridge circuit 5, the second voltage 5aV2 of the first branch 5b forms the positive polarity of the sixth differential voltage signal SV6, and the second voltage 5bV2 of the second branch 5b forms the negative polarity of the fourth differential voltage signal SV6.

[0079] The sixth differential voltage signal SV6 is added to the third differential voltage signal SV6 to provide the first differential voltage Z output DZ1.

[0080] The third and sixth differential voltage signals SV3 and SV6 are amplified in parallel by a pair of transconductance amplifiers A1 and A2 to provide corresponding third and sixth differential current signals SI3 and SI6. The third differential current signal SI3 and the sixth differential current signal SI6 are added to provide the first differential current output DIZ1. The first differential current output DIZ1 is amplified by a transimpedance amplifier B to provide the first differential voltage output DZ1.

[0081] To achieve the differential voltage output DVZ1, the amplification and summation of the third and sixth differential voltage signals SV3 and SV6 are performed in a manner similar to the amplification and summation of the first and second differential voltage signals SV1 and SV2 to achieve the differential voltage output DVX, as described above. Figure 5 As described. The voltage and current involved can be directly obtained from... Figure 7 I learned this from the middle.

[0082] although Figures 5 to 7 The implementations are described using separate circuits and appliances; however, the front end for providing differential voltage X, Y, and Z outputs can be implemented using only a single amplifier circuit. In these implementations, the front end of the magnetoresistive sensing device further includes: a first switch (not shown) designed for switching between first, fourth, and third differential voltage signals SV1, SV4, and SV3; a second switch (not shown) designed for switching between second, fifth, and sixth signals SV2, SV5, and SV6; and a control device designed for controlling the first and second switches to perform time-division multiplexing between the differential voltage X output DVX, the differential voltage Y output DVY, and the first differential voltage Z output DVZ1 via the same pair of transconductance amplifiers A1 and A2 and transimpedance amplifier B.

[0083] Figure 8 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown.

[0084] In this embodiment, the second differential voltage signal SV2 is subtracted from the first signal SV1 to provide the second differential voltage output DZ2.

[0085] To this end, the first and second differential voltage signals SV1 and SV2 are amplified in parallel by a pair of transconductance amplifiers A1 and A2 to provide corresponding first and second differential current signals SI1 and SI2. The second differential current signal SI2 is subtracted from the first differential current signal SI1 to provide a second differential current Z-output DIZ2. The second differential current Z-output DIZ2 is amplified by a transimpedance amplifier B to provide a second differential voltage Z-output DZ2.

[0086] To achieve the second differential voltage output DVZ2, the amplification and summation of the first and second differential voltage signals SV1 and SV2 are performed in a similar manner to those for achieving the differential voltage output DVX, as described above. Figure 5 As described, the difference lies in that, for the subtraction, the first amplified current 4aI1 and the third amplified current 4aI3 are added at node NZ2a to provide the first summed current DIZ2a, and the first amplified current 4bI1 and the third amplified current 4bI3 are added at node NZ2b to provide the second summed current DIZ2b. The remaining voltages and currents involved can be directly obtained from... Figure 8 I learned this from the middle.

[0087] Figure 9 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown.

[0088] In this embodiment, the third differential voltage signal SV3 is subtracted from the fourth differential voltage signal SV4 to provide the third differential voltage output DZ3.

[0089] The fourth and fifth differential voltage signals SV4 and SV5 are amplified in parallel by a pair of transconductance amplifiers A1 and A2 to provide the corresponding fourth and fifth differential current signals SI4 and SI5. The fifth differential current signal SI5 is subtracted from the fourth differential current signal SI4 to provide the third differential current Z output DIZ3. The third differential current Z output DIZ3 is amplified by a transimpedance amplifier B to provide the third differential voltage Z output DZ3.

[0090] To achieve the third differential voltage output DZ3, the amplification and subtraction of the fourth and fifth differential voltage signals SV4 and SV5 are performed in a similar manner to the amplification and subtraction of the first and second differential voltage signals SV1 and SV2 to achieve the second differential voltage output DZ2, as described above. Figure 8 As described. The voltage and current involved can be directly obtained from... Figure 9 I learned this from the middle.

[0091] Figures 10A-10B A schematic diagram of a bridge circuit of a magnetoresistive detection device according to another embodiment of the present invention is shown.

[0092] This embodiment of the magnetoresistive detection device is based on reference to Figure 4 and Figure 5 The embodiments shown and described. However, in this alternative embodiment, the arrangement of the MR elements differs from that described with reference to FIG4 and 5.

[0093] exist Figure 10A The first bridge circuit 4 of this alternative embodiment is shown. For the first bridge circuit 4, the MR element of the fourth resistor 4a4 of the first branch 4a and the MR element of the second resistor 4b2 of the second branch 4b are of type 3a1, the MR element of the first resistor 4a1 of the first branch 4a and the MR element of the third resistor 4b3 of the second branch 4b are of type 3a2, the MR element of the second resistor 4a2 of the first branch 4a and the MR element of the fourth resistor 4b4 of the second branch 4b are of type 3b1, and the MR element of the third resistor 4a3 of the first branch 4a and the MR element of the first resistor 4b1 of the second branch 4b are of type 3b2.

[0094] exist Figure 10B The second bridge circuit 5 is shown. For the second bridge circuit 5, the MR element of the third resistor 5a3 of the first branch 5a and the MR element of the first resistor 5b1 of the second branch 5b are of type 3a1; the MR element of the second resistor 5a2 of the first branch 5a and the MR element of the fourth resistor 5b4 of the second branch 5b are of type 3a2; the MR element of the first resistor 5a1 of the first branch 5a and the MR element of the third resistor 5b3 of the second branch 5b are of type 3b1; and the MR element of the fourth resistor 5a4 of the first branch 5a and the MR element of the second resistor 5b3 of the second branch 5b are of type 3b2.

[0095] Figure 11 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown.

[0096] The third differential voltage signal SV3 is amplified by transconductance amplifier A to provide the third differential current signal SI3. The third differential current signal SI3 is amplified by transimpedance amplifier B to provide the differential voltage X output DVX. The sixth differential voltage signal SV6 is amplified in parallel by transconductance amplifier A to provide the sixth differential current signal SI6. The sixth differential current signal SI6 is amplified by transimpedance amplifier B to provide the differential voltage Y output DVY.

[0097] In this alternative embodiment, the amplification of the third and sixth differential voltage signals SV3 and SV6 to achieve the differential voltage X and Y outputs DVX and DVY is performed in a manner similar to the amplification of the corresponding first to sixth signals SV1 to SV6, as previously described. Figures 5 to 9 As described in [the text]. The voltage and current involved can be directly obtained from [the text]. Figure 11 I learned this from the middle.

[0098] Figure 12 A schematic diagram of the front end of a magnetoresistive detection device according to another embodiment of the present invention is shown.

[0099] The second differential voltage signal SV2 is added to the first differential voltage signal SV1, and the fourth and fifth differential voltage signals SV4 and SV5 are subtracted from the first voltage signal SV1 to provide the differential voltage Z output DVZ.

[0100] The first, second, fourth, and fifth differential voltage signals SV1, SV2, SV4, and SV5 are amplified in parallel by corresponding transconductance amplifiers A1-A4 to provide corresponding first, second, fourth, and fifth differential current signals SI1, SI2, SI4, and SI5. The second differential current signal SI2 is added to the first differential current signal SI1, and the fourth and fifth differential current signals SI4 and SI5 are subtracted from the first differential current signal SI1 to provide differential current Z-output DIZ. The differential current Z-output DIZ is amplified by transimpedance amplifier B to provide differential voltage Z-output DVZ1.

[0101] In this alternative embodiment, the amplification, summation, and subtraction of the first, second, fourth, and fifth differential voltage signals SV1, SV2, SV4, and SV5 to achieve the differential voltage Z output DVZ are performed in a manner similar to the amplification and summation of, for example, the first and second differential voltage signals SV1 and SV2 to achieve the differential voltage X output DVX, as described above. Figure 5 As described, and in a manner similar to the amplification and subtraction of the first and second differential voltage signals SV1, SV2 to achieve the first differential voltage output DVZ1, as referred to above. Figure 7As described. The voltage and current involved can be directly obtained from... Figure 12 I learned this from the middle.

[0102] These embodiments were chosen and described in order to best demonstrate the principles upon which the invention is based and its practical applicability. As a result, those skilled in the art can optimally modify and utilize the invention and its various embodiments for intended uses.

[0103] For example: According to another embodiment of the magnetoresistive detection device, at least one of the first, second, third, and fourth resistors 4a1-4a4, 4b1-4b4, 5a1-5a4, and 5b1-5b4 in the first and second branches 4a, 4b, 5a, and 5b of the first and second bridge circuits 4 and 5 includes a plurality of MR elements 3. In these embodiments, the magnetization direction of the free layer M of one rounded half of the MR element 3 of the same resistor 4a1-4a4, 4b1-4b4, 5a1-5a4, and 5b1-5b4 is opposite to the magnetization direction M of the free layer of the other rounded half of the MR element 3 of the same resistor 4a1-4a4, 4b1-4b4, 5a1-5a4, and 5b1-5b4.

[0104] According to another embodiment, the magnetoresistive detection device further includes a third bridge circuit and a fourth bridge circuit. Generally, the third bridge circuit is the same as the first bridge circuit 4, except that the MR element 3 of the third bridge circuit has opposite magnetization M of the free layer of the corresponding TMR element 3. The fourth bridge circuit 4 is the same as the second bridge circuit 5, except that the MR element 3 of the fourth bridge circuit has opposite magnetization M of the free layer of the corresponding TMR element 3.

[0105] According to another embodiment of the magnetoresistive sensing device, the substrate 2 includes a plurality of mounds and valleys, the mounds and valleys including a first surface 2a1 and a second surface 2a2 opposite to each other, or a third surface 2a3 and a fourth surface 2a4 opposite to each other. In such an embodiment, adjacent MR elements 3 of resistors 4a1-4a4, 4b1-4b4, 5a1-5a4, and 5b1-5b4 are arranged on the same mound or valley.

[0106] Although the front end is based on transconductance and transimpedance amplifiers, in another embodiment, the transconductance and transimpedance amplifiers are replaced by a switching capacitor circuit that performs similar functions in a similar manner without changing the principle and significance of the proposed concept.

Claims

1. A magnetoresistive detection device, the magnetoresistive detection device comprising: Substrate (2), the substrate having a reference surface (2a); The reference surface (2a) includes a first plurality of inclined surfaces (2a1) and a second plurality of inclined surfaces (2a2), the first plurality of inclined surfaces and the second plurality of inclined surfaces extending along a first direction (Y) orthogonal to the normal direction (Z), the normal direction being orthogonal to the reference surface (2a), wherein each of the first plurality of inclined surfaces (2a1) is opposite to one of the second plurality of inclined surfaces (2a2), and wherein the first plurality of inclined surfaces (2a1) and the second plurality of inclined surfaces (2a2) have an inclination (I) relative to the reference surface (2a); Multiple MR elements (3) having resistance, wherein the multiple MR elements include MR elements of first, second, third and fourth types, wherein for a magnetic field in a second direction (X) orthogonal to the first direction (Y) and the normal direction (Z), the resistance of the first and fourth types (3a1, 3b2) of MR elements (3) increases, and the resistance of the second and third types (3a2, 3b1) of MR elements (3) decreases, wherein for a magnetic field in the normal direction (Z), the resistance of the third and fourth types (3b1, 3b2) of MR elements (3) increases, and the resistance of the first and second types (3a1, 3a2) of MR elements (3) decreases; A first bridge circuit (4) has a first branch (4a) and a second branch (4b), wherein not only the first branch (4a) but also the second branch (4b) has a series connection of a first resistor (4a1, 4b1), a second resistor (4a2, 4b2), a third resistor (4a3, 4b3), and a fourth resistor (4a4, 4b4) in sequence. Specifically, for each of the two branches (4a, 4b), a first voltage (4aV1, 4bV1) is provided between the first resistor (4a1, 4b1) and the second resistor (4a2, 4b2), a second voltage (4aV2, 4bV2) is provided between the second resistor (4a2, 4b2) and the third resistor (4a3, 4b3), and a third voltage (4aV3, 4bV3) is provided between the third resistor (4a3, 4b3) and the fourth resistor (4a4, 4b4). Each of the resistors (4a1-4a4, 4b1-4b4) includes at least one MR element from a plurality of MR elements (3) of the same type (3a1, 3a2, 3b1, 3b2), and the at least one MR element is arranged on the same inclined surface in the first and second inclined surfaces (2a1-2a2). Among them, the MR elements (3) of at least two of the first, second, third and fourth resistors (4a1-4a4, 4b1-4b4) are arranged on opposite inclined surfaces (2a1-2a2).

2. The magnetoresistive detection device according to claim 1, in, The substrate (2) includes a third plurality of tilted surfaces (3a1) and a fourth plurality of tilted surfaces (3a2), the third plurality of tilted surfaces and the fourth plurality of tilted surfaces extending along a second direction (X) orthogonal to the first direction (Y) and the normal direction (Z), wherein the third plurality of tilted surfaces (2a3) are opposite to the fourth plurality of tilted surfaces (2a4), wherein the third plurality of tilted surfaces (2a3) and the fourth plurality of tilted surfaces (2a4) have a tilt (I) relative to the reference surface (2a); The magnetoresistive detection device further includes: The second bridge circuit (5) has a first branch (5a) and a second branch (5b), wherein not only the first branch (5a) but also the second branch (5b) has a series connection of a first resistor (5a1, 5b1), a second resistor (5a2, 5b2), a third resistor (5a3, 5b3), and a fourth resistor (5a4, 5b4) in sequence. Specifically, for each of the two branches, a first voltage (5aV1, 5bV1) is provided between the first resistor (5a1, 5b1) and the second resistor (5a2, 5b2), a second voltage (5aV2, 5bV2) is provided between the second resistor (5a2, 5b2) and the third resistor (5a3, 5b3), and a third voltage (5aV3, 5bV3) is provided between the third resistor (5a3, 5b3) and the fourth resistor (5a4, 5b4). Each of the resistors (5a1-5a4, 5b1-5b4) includes at least one MR element from a plurality of MR elements (3) of the same type (3a1, 3a2, 3b1, 3b2), and the at least one MR element is arranged on the same inclined surface in the third and fourth plurality of inclined surfaces (2a3-2a4). Among them, the MR elements (3) of at least two of the first, second, third and fourth resistors (5a1-5a4, 4b1-4b4) are arranged on opposite inclined surfaces (2a1-2a4).

3. The magnetoresistive detection device according to claim 1 or 2, in, The plurality of MR elements (3) are constructed as TMR elements, wherein each TMR element (3) includes a magnetic layer and a free layer, the magnetic layer having a fixed reference magnetization direction (Mref), and the free layer having a magnetization direction that can be changed by an external electric field. The first type (3a1) TMR element is magnetized upwards along the gradient of the inclination (I) of the corresponding first or third plurality of inclined surfaces (2a1, 2a3) with its corresponding reference magnetization (Mref). The second type (3a2) TMR element is magnetized upwards along the gradient of the inclination (I) of the corresponding second or fourth plurality of inclined surfaces (2a2, 2a4) with its corresponding reference magnetization (Mref). The third type (3b1) TMR element is magnetized downwards along the gradient of the inclination (I) of the corresponding first or third plurality of inclined surfaces (2a1, 2a3). The fourth type (3b2) TMR element is magnetized downwards along the gradient of the inclination (I) of the corresponding second and fourth plurality of inclined surfaces (2a2, 2a4) with its corresponding reference magnetization (Mref).

4. The magnetoresistive detection device according to any one of the preceding claims, in, The MR element (3) of each of the first, second, third and fourth resistors (4a1-4a4, 4b1-4b4, 5a1-5a4, 5b1-5b4) is arranged on the same inclined surface of the first, second, third and fourth plurality of inclined surfaces (2a1-2a4), and wherein the MR elements of two of the first, second, third and fourth resistors (4a1-4a4, 4b1-4b4, 5a1-5a4, 5b1-5b4) are arranged on opposite inclined surfaces (2a1-2a4).

5. The magnetoresistive detection device according to claim 2, in, For each of the first bridge circuits in the first bridge circuit (4), - The second voltage (4aV1) of the first branch (4a) forms the positive polarity of the first differential voltage signal (SV1), wherein the first voltage (4bV1) of the second branch (4a) forms the negative polarity of the first differential voltage signal (SV1). - Wherein, the third voltage (4aV3) of the first branch (4a) forms the negative polarity of the second differential voltage signal (SV2), and the third voltage (4bV3) of the second branch (4b) forms the positive polarity of the second differential voltage signal (SV2). - Wherein, the second voltage (4aV2) of the first branch (4a) forms the positive polarity of the third differential voltage signal (SV3), and the second voltage (4bV2) of the second branch (5b) forms the negative polarity of the third differential voltage signal (SV3). For each of the second bridge circuits in the second bridge circuit (5), - The first voltage (5aV1) of the first branch (5a) forms the positive polarity of the fourth differential voltage signal (SV4), and the first voltage (5bV1) of the second branch (5b) forms the negative polarity of the fourth differential voltage signal (SV4). - The third voltage (5aV3) of the first branch (5a) forms the negative polarity of the fifth differential voltage signal (SV5), and the third voltage (5bV3) of the second branch (5b) forms the positive polarity of the fifth differential voltage signal (SV5). - Wherein, the second voltage (5aV2) of the first branch (5b) forms the positive polarity of the sixth differential voltage signal (SV6), and the second voltage (5bV2) of the second branch (5b) forms the negative polarity of the sixth differential voltage signal (SV6).

6. The magnetoresistive detection device according to claim 5, in, For the first and second bridge circuits (4, 5), the MR element of the second resistor (4a2, 5a2) of the first branch (4a, 5a) and the MR element of the fourth resistor (4b4, 5b4) of the second branch (4b, 5b) are of type 1 (3a1), the MR element of the first resistor (4a1, 5a1) of the first branch (4a, 5a) and the MR element of the third resistor (4b3, 5b3) of the second branch (4b, 5b) are of type 2 (3a2), the MR element of the fourth resistor (4a4, 5a4) of the first branch (4a, 5a) and the MR element of the second resistor (4b2, 5b2) of the second branch (4b, 5b) are of type 3 (3b1), and the MR element of the third resistor (4a1, 5a1) of the first branch (4a, 5a) and the MR element of the first resistor (4b3, 5b3) of the second branch (4b, 5b) are of type 4 (3b2).

7. The magnetoresistive detection device according to claim 6, in, The second differential voltage signal (SV2) is added to the first differential voltage signal (SV1) to provide a differential voltage X output (DVX). Specifically, the fifth differential voltage signal (SV5) is added to the fourth differential voltage signal (SV4) to provide a differential voltage Y output (DVY). The sixth differential voltage signal (SV6) is added to the third differential voltage signal (SV6) to provide the first differential voltage Z output (DZ1).

8. The magnetoresistive detection device according to claim 7, in, The first and second differential voltage signals (SV1, SV2) are amplified in parallel by a pair of transconductance amplifiers (A1, A2) to provide corresponding first and second differential current signals (SI1, SI2), wherein the first differential current signal (SI1) and the second differential current signal (SI2) are added to provide a differential current X output (DIX), wherein the differential current X output (DIX) is amplified by a transimpedance amplifier (B) to provide the differential voltage X output (DVX).

9. The magnetoresistive detection device according to claim 7 or 8, in, The fourth and fifth differential voltage signals (SV4, SV5) are amplified in parallel by a pair of transconductance amplifiers (A1, A2) to provide corresponding fourth and fifth differential current signals (SI4, SI5). The fourth differential current signal (SI4) is added to the fifth differential current signal (SI5) to provide a differential current Y output (DIY). The differential current Y output (DIY) is amplified by a transimpedance amplifier (B) to provide the differential voltage Y output (DVY).

10. The magnetoresistive detection device according to any one of claims 7 to 9, in, The third and sixth differential voltage signals (SV3, SV6) are amplified by a pair of transconductance amplifiers (A1, A2) to provide corresponding third and sixth differential current signals (SI3, SI6). The third differential current signal (SI3) is added to the sixth differential current signal (SI6) to provide a first differential current Z-output (DIZ1). The first differential current Z-output (DIZ1) is amplified by a transimpedance amplifier (B) to provide a first differential voltage Z-output (DZ1).

11. The magnetoresistive detection device according to any one of claims 8 to 10, The magnetoresistive detection device further includes a first switch designed to switch between the first, third, and fourth differential voltage signals (SV1, SV3, SV4); A second switch is designed to switch between the second, fifth, and sixth signals (SV2, SV5, SV6); and a control device designed to control the first and second switches for time-division multiplexing between the differential voltage X output (DVX), the differential voltage Y output (DVY), and the first differential voltage Z output (DVZ1) via the same pair of transconductance amplifiers (A1, A2) and transimpedance amplifier (B).

12. The magnetoresistive detection device according to claim 6, in, The second differential voltage signal (SV2) is subtracted from the first signal (SV1) to provide a second differential voltage Z output (DZ2), wherein the third differential voltage signal (SV3) is subtracted from the fourth differential voltage signal (SV4) to provide a third differential voltage Z output (DZ3).

13. The magnetoresistive detection device according to claim 12, in, The first and second differential voltage signals (SV1, SV2) are amplified in parallel by a pair of transconductance amplifiers (A1, A2) to provide corresponding first and second differential current signals (SI1, SI2), wherein the second differential current signal (SI2) is subtracted from the first differential current signal (SI1) to provide a second differential current Z-output (DIZ2), wherein the second differential current Z-output (DIZ2) is amplified by a transimpedance amplifier (B) to provide a second differential voltage Z-output (DZ2).

14. The magnetoresistive detection device according to claim 12 or 13, in, The fourth and fifth differential voltage signals (SV4, SV5) are amplified in parallel by a pair of transconductance amplifiers (A1, A2) to provide corresponding fourth and fifth differential current signals (SI4, SI5), wherein the fifth differential current signal (SI5) is subtracted from the fourth differential current signal (SI4) to provide a third differential current Z-output (DIZ3), wherein the third differential current Z-output (DIZ3) is amplified by a transimpedance amplifier (B) to provide the third differential voltage Z-output (DZ3).

15. The magnetoresistive detection device according to claim 2, in, For the first bridge circuit (4), the MR element of the fourth resistor (4a4) of the first branch (4a) and the MR element of the second resistor (4b2) of the second branch (4b) are of type 1 (3a1), the MR element of the first resistor (4a1) of the first branch (4a) and the MR element of the third resistor (4b3) of the second branch (4b) are of type 2 (3a2), the MR element of the second resistor (4a2) of the first branch (4a) and the MR element of the fourth resistor (4b4) of the second branch (4b) are of type 3 (3b1), and the MR element of the third resistor (4a3) of the first branch (4a) and the MR element of the first resistor (4b1) of the second branch (4b) are of type 4 (3b2). Specifically, for the second bridge circuit (5), the MR element of the third resistor (5a3) of the first branch (5a) and the MR element of the first resistor (5b1) of the second branch (5b) are of the first type (3a1), the MR element of the second resistor (5a2) of the first branch (5a) and the MR element of the fourth resistor (5b4) of the second branch (5b) are of the second type (3a2), the MR element of the first resistor (5a1) of the first branch (5a) and the MR element of the third resistor (5b3) of the second branch (5b) are of the third type (3b1), and the MR element of the fourth resistor (5a4) of the first branch (5a) and the MR element of the second resistor (5b3) of the second branch (5b) are of the fourth type (3b2).

16. The magnetoresistive detection device according to claims 5 and 15, in, The third differential voltage signal (SV3) is amplified by a transconductance amplifier (A) to provide a third differential current signal (SI3), wherein the third differential current signal (SI3) is amplified by a transimpedance amplifier (B) to provide a differential voltage X output (DVX), wherein the sixth differential voltage signal (SV6) is amplified in parallel by a transconductance amplifier (A) to provide a sixth differential current signal (SI6), wherein the sixth differential current signal (SI6) is amplified by a transimpedance amplifier (B) to provide a differential voltage Y output (DVY).

17. The magnetoresistive detection device according to claims 5 and 15, in, The second differential voltage signal (SV2) is added to the first differential voltage signal (SV1), and the fourth and fifth differential voltage signals (SV4, SV5) are subtracted from the first voltage signal (SV1) to provide a differential voltage Z output (DVZ).

18. The magnetoresistive detection device according to claim 17, in, The first, second, fourth, and fifth differential voltage signals (SV1, SV2, SV4, SV5) are amplified in parallel by corresponding transconductance amplifiers (A1-A4) to provide corresponding first, second, fourth, and fifth differential current signals (SI1, SI2, SI4, SI5). The second differential current signal (SI2) is added to the first differential current signal (SI1), and the fourth and fifth differential current signals (SI4, SI5) are subtracted from the first differential current signal (SI1) to provide a differential current Z-output (DIZ). The differential current Z-output (DIZ) is amplified by a transimpedance amplifier (B) to provide the differential voltage Z-output (DVZ).

19. The magnetoresistive detection device according to claim 3, in, At least one of the first, second, third, and fourth resistors (4a1-4a4, 4b1-4b4, 5a1-5a4, 5b1-5b4) in the first and second branches (4a, 4b, 5a, 5b) of the first and second bridge circuits (4, 5) includes a plurality of MR elements (3). Among them, the magnetization direction (M) of the free layer of one rounded half of the MR element (3) of the same resistor (4a1-4a4, 4b1-4b4, 5a1-5a4, 5b1-5b4) is opposite to the magnetization direction (M) of the free layer of the other rounded half of the MR element (3) of the same resistor (4a1-4a4, 4b1-4b4, 5a1-5a4, 5b1-5b4).

20. The magnetoresistive detection device according to claim 2, wherein the magnetoresistive detection device further comprises a third bridge circuit and a fourth bridge circuit, wherein, The third bridge circuit is the same as the first bridge circuit (4), but the MR element (3) of the third bridge circuit has the opposite magnetization (M) of the free layer of the corresponding TMR element (3). The fourth bridge circuit (4) is the same as the second bridge circuit (5), but the MR element (3) of the fourth bridge circuit has the opposite magnetization (M) of the free layer of the corresponding TMR element (3).

21. The magnetoresistive detection device according to any one of the preceding claims, wherein, The substrate (2) includes a plurality of mounds or valleys, the mounds or valleys including a first surface (2a1) and a second surface (2a2) opposite to each other or a third surface (2a3) and a fourth surface (2a4) opposite to each other, wherein MR elements (3) of adjacent resistors (4a1-4a4, 4b1-4b4, 5a1-5a4, 5b1-5b4) are arranged on the same mounds or valleys.

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