An anti-radiation glass and a preparation method and application thereof

Abstract

This invention discloses a radiation-resistant glass, its preparation method, and its application. The radiation-resistant glass comprises the following components in weight percentage: silicon dioxide 60%-70%; sodium oxide 13%-18%; zinc oxide 3%-6%; aluminum oxide 2%-6%; boron trioxide 1%-6%; strontium oxide 1%-3%; cerium dioxide 4.7%-5.5%; lanthanum trioxide / hafnium dioxide 1%-3%; and ammonium difluoride 0.3%-1%. The technical problem to be solved is to significantly improve the high-energy particle radiation protection and light transmittance of the glass by selecting a specific formulation.

Description

Technical Field

[0001] This invention relates to the field of optical glass, specifically to a radiation-resistant glass, its preparation method, and its application. Background Technology

[0002] Radiation-resistant glass is an optical glass whose transmittance in the visible light region decreases only slightly after irradiation by high-energy rays or bombardment by particles. It features strong radiation resistance, high transmittance, and stable physicochemical properties, and is primarily used in aerospace, nuclear industry, military, and medical fields. Radiation-resistant glass can be used on the surface of solar cell arrays in satellites, space stations, and other spacecraft to protect them from radiation and bombardment by high-energy rays and particles, extending their lifespan and ensuring a reliable power supply for these spacecraft. Simultaneously, radiation-resistant glass can be used as the partition glass in the main amplifier system of a high-power solid-state laser driver simulating a nuclear explosion. In high-power solid-state laser drivers, when subjected to the intense light, heat, and shock wave radiation from a pulsed xenon lamp explosion with a peak current of 18kA, a peak voltage of 23kV, and a discharge pulse width of 500Hz, this glass can ensure the cleanliness and safety of the expensive neodymium glass used in gain lasers. It not only effectively absorbs excess ultraviolet light from the xenon lamp, improving the beam quality and efficiency of the amplifier, but also enhances the safety and reliability of the laser device.

[0003] Currently, radiation-resistant glass, due to its compositional characteristics, typically contains high levels of components such as cerium dioxide, which causes glass coloration and reduces light transmittance, especially in the blue light region, thereby increasing light absorption. Therefore, how to prepare composite functional glass with "high radiation protection and high light transmittance" has become a research hotspot in the field of specialty glass. Summary of the Invention

[0004] In view of this, the main objective of the present invention is to provide a radiation-resistant glass, its preparation method and application. The technical problem to be solved is to significantly improve the high-energy particle radiation protection and light transmittance of the glass by selecting a specific formula.

[0005] The objective of this invention and the technical problem it solves are achieved through the following technical solution. This invention proposes a radiation-resistant glass comprising the following components by weight percentage: silicon dioxide 60%-70%; sodium oxide 13%-18%; zinc oxide 3%-6%; aluminum oxide 2%-6%; boron trioxide 1%-6%; strontium oxide 1%-3%; cerium dioxide 4.7%-5.5%; lanthanum trioxide / hafnium dioxide 1%-3%; and ammonium difluoride 0.3%-1%.

[0006] The objectives of this invention and the technical problems solved can be further achieved by the following technical measures.

[0007] Preferably, the aforementioned radiation-resistant glass comprises the following components in weight percentage: silicon dioxide 65%-69%; sodium oxide 14%-16%; zinc oxide 3%-4%; aluminum oxide 3%-5%; boron oxide 1%-3%; strontium oxide 1%-2%; cerium dioxide 5.0%-5.2%; lanthanum oxide / hafnium dioxide 1%-2%; and ammonium difluoride 0.6%-1%.

[0008] Preferably, the aforementioned radiation-resistant glass has a high-energy electron radiation attenuation rate ≤0.4%, a light transmittance T≥90.5%@400nm, T≥92%@450nm-1100nm, and a water resistance stability not lower than HBG2 level.

[0009] The objectives of this invention and the technical problems it solves can be further achieved by the following technical measures. The present invention provides a method for preparing radiation-resistant glass, comprising the following steps: S1 Weigh out the corresponding raw materials according to the content of each component of the radiation-resistant glass, and mix them evenly; S2 involves melting the uniformly mixed raw materials at high temperature, clarifying and homogenizing them using mechanical stirring, forming them through a discharge process, and then annealing them to obtain the radiation-resistant glass.

[0010] The objectives of this invention and the technical problems solved can be further achieved by the following technical measures.

[0011] Preferably, in the aforementioned method for preparing radiation-resistant glass, in step S1, the silicon dioxide is introduced in the form of quartz sand, the aluminum oxide is introduced in the form of aluminum oxide, the boron oxide is introduced in the form of boric acid, the sodium oxide is introduced in the form of sodium oxide, sodium carbonate, sodium nitrate or sodium fluoride, the zinc oxide is introduced in the form of zinc oxide, zinc carbonate, zinc nitrate or zinc fluoride, the strontium oxide is introduced in the form of strontium oxide, strontium carbonate, strontium nitrate or strontium fluoride, the cerium dioxide is introduced in the form of cerium dioxide, strontium carbonate, strontium nitrate or strontium fluoride, the lanthanum oxide is introduced in the form of lanthanum oxide, lanthanum carbonate, lanthanum nitrate or lanthanum fluoride, the hafnium dioxide is introduced in the form of hafnium oxide, hafnium carbonate, hafnium nitrate or hafnium fluoride, and the ammonium difluoride is introduced in the form of ammonium difluoride.

[0012] Preferably, in the aforementioned method for preparing radiation-resistant glass, in step S2, the high-temperature melting temperature is 1450℃-1550℃, and the time is 3h-6h.

[0013] Preferably, in the aforementioned method for preparing radiation-resistant glass, in step S2, the high-temperature melting process maintains a weakly neutral environment, and the nitrogen flow rate is 2L / h-5L / h.

[0014] Preferably, in the aforementioned method for preparing radiation-resistant glass, in step S2, the mechanical stirring speed is 60 rpm-100 rpm and the time is 1 h-4 h.

[0015] Preferably, in the aforementioned method for preparing radiation-resistant glass, in step S2, the temperature for the material forming process is 1150℃-1200℃, and the temperature for preheating the mold is 400℃-450℃.

[0016] Preferably, in the aforementioned method for preparing radiation-resistant glass, in step S2, the annealing temperature is 580℃-610℃ and the time is 5h-10h.

[0017] The objectives of this invention and the solutions to its technical problems can also be achieved using the following technical measures. This invention proposes a spacecraft comprising a solar cell array, wherein the solar cell array is provided with the aforementioned radiation-resistant glass.

[0018] The objectives of this invention and the solutions to its technical problems can also be achieved using the following technical measures. This invention proposes a high-power solid-state laser driver, which includes a main amplifier system. The main amplifier system includes a partition glass, and the partition glass is made of the aforementioned radiation-resistant glass.

[0019] The objectives of this invention and the technical problems it solves can also be achieved by the following technical measures. This invention proposes a radiation protection material, wherein the radiation protection material uses the aforementioned radiation-resistant glass.

[0020] Compared with existing technologies, the radiation-resistant glass, its preparation method, and its application described in this invention have the following beneficial effects: 1. The radiation-resistant glass provided by this invention has excellent comprehensive performance, with a high-energy electron irradiation attenuation rate ≤0.4%, light transmittance T≥90.5%@400nm, T≥92%@450nm-1100nm, water resistance stability not lower than HBG2 level, and expansion coefficient matching gallium arsenide battery array substrate. 2. The radiation-resistant glass provided by this invention contains a relatively large amount of ammonium difluoride, and is melted under a neutral atmosphere (nitrogen protection), which is beneficial for controlling the valence state of cerium ions, mainly Ce. 3+ It exists in a low-cost form, which improves the light transmittance of the glass in the blue light region; 3. The radiation-resistant glass component provided by this invention contains a high content of cerium dioxide, which can improve the glass's resistance to high-energy electron radiation and ensure that the light transmittance of the glass decreases by ≤0.4% after irradiation; 4. The radiation-resistant glass composition provided by this invention contains a certain amount of lanthanum trioxide / hafnium dioxide, which significantly improves the chemical stability of the glass and its water resistance is not lower than HBG2 level.

[0021] The above description is merely an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention and to implement it in accordance with the contents of the specification, the preferred embodiments of the present invention are described in detail below. Detailed Implementation

[0022] To further illustrate the technical means and effects adopted by the present invention to achieve its intended purpose, the following detailed description, in conjunction with preferred embodiments, provides a detailed explanation of the specific implementation methods, structures, features, and effects of a radiation-resistant glass, its preparation method, and its application according to the present invention. In the following description, different "embodiments" or "embodiments" do not necessarily refer to the same embodiment. Furthermore, specific features, structures, or characteristics in one or more embodiments can be combined in any suitable manner.

[0023] Unless otherwise specified, all materials and reagents mentioned below are commercially available products well-known to those skilled in the art; unless otherwise specified, all methods described are methods known in the art. Unless otherwise defined, the technical or scientific terms used should have the ordinary meaning understood by those skilled in the art. Where specific experimental steps or conditions are not specified below, they can be performed according to the conventional experimental steps or conditions described in the literature in this field.

[0024] According to some embodiments of the present invention, a radiation-resistant glass comprises the following components in weight percentage: silicon dioxide 60%-70%; sodium oxide 13%-18%; zinc oxide 3%-6%; aluminum oxide 2%-6%; boron oxide 1%-6%; strontium oxide 1%-3%; cerium dioxide 4.7%-5.5%; lanthanum oxide / hafnium dioxide 1%-3%; and ammonium difluoride 0.3%-1%. Silicon dioxide, boron oxide, and aluminum oxide are the basic components, while sodium oxide, zinc oxide, strontium oxide, cerium dioxide, lanthanum oxide, hafnium dioxide, and ammonium difluoride are the functional components of the glass provided in the embodiments of the present invention. These basic components and the functional components are used together to prepare the radiation-resistant glass.

[0025] In some optional embodiments, the radiation-resistant glass comprises the following components in weight percentage: silicon dioxide 65%-69%; sodium oxide 14%-16%; zinc oxide 3%-4%; aluminum oxide 3%-5%; boron oxide 1%-3%; strontium oxide 1%-2%; cerium dioxide 5.0%-5.2%; lanthanum oxide / hafnium dioxide 1%-2%; and ammonium difluoride 0.6%-1%.

[0026] In the above technical solution, the roles and contents of each component are selected as follows: Silica is an important network former in the radiation-resistant glass provided by this invention, which can improve the glass-forming ability, strength, and chemical stability of the glass. This invention controls the weight percentage of silica to 60%-70%, preferably 65%-69%, which ensures both a homogeneous glass body and high chemical stability. If the weight percentage of silica is below 60%, the glass-forming ability and chemical properties deteriorate; if the weight percentage of silica exceeds 70%, the glass viscosity increases significantly, making it difficult to obtain a homogeneous body.

[0027] Sodium oxide is an essential component for radiation-resistant glass to reduce melting temperature and for chemical tempering reinforcement. In this invention, the weight percentage of this component is controlled at 13%-18%, preferably 14%-16%. If the weight percentage of sodium oxide is below 13%, the glass melting temperature increases, glass-forming properties deteriorate, and it becomes difficult to achieve reinforcement through chemical tempering; if the weight percentage of sodium oxide exceeds 18%, the chemical stability of the glass deteriorates.

[0028] Zinc oxide is an essential component for radiation-resistant glass to reduce melting temperature and improve chemical stability. In this invention, the weight percentage of this component is controlled at 3%-6%, preferably 3%-4%. If the weight percentage of zinc oxide is less than 3%, the glass melting temperature is high and the chemical stability is poor; if the weight percentage of zinc oxide exceeds 6%, the glass-forming properties deteriorate.

[0029] Aluminum oxide (A₂O₃) is a crucial network intermediate in the radiation-resistant glass provided by this invention. It can adjust the glass network structure and improve glass-forming ability. This invention controls the weight percentage of this component to 2%-6%, preferably 3%-5%, which ensures both a homogeneous glass body and excellent high-energy electron irradiation attenuation rate. If the weight percentage of A₂O₃ is below 2%, the glass-forming ability deteriorates; if the weight percentage of A₂O₃ exceeds 6%, the glass viscosity increases significantly, making it difficult to obtain a homogeneous body.

[0030] Boron trioxide is an important network formant in the radiation-resistant glass provided by this invention, which can improve the glass-forming ability. This invention controls the weight percentage of this component to 1%-6%, preferably 1%-3%, which ensures both a homogeneous glass body and excellent high-energy electron irradiation attenuation rate. If the weight percentage of boron trioxide is less than 1%, the glass-forming ability deteriorates; if the weight percentage of boron trioxide exceeds 6%, the high-energy electron irradiation attenuation rate of the glass increases.

[0031] Strontium oxide is an essential component for radiation-resistant glass to reduce melting temperature and improve chemical stability. In this invention, the weight percentage of this component is controlled at 1%-3%, preferably 1%-2%. If the weight percentage of strontium oxide is less than 1%, the glass melting temperature is high and the chemical stability is poor; if the weight percentage of strontium oxide exceeds 6%, the glass-forming properties deteriorate.

[0032] Cerium dioxide is an essential component for radiation-resistant glass to resist high-energy electron radiation. In this invention, the weight percentage of this component is controlled at 4.7%-5.5%, preferably 5%-5.2%. If the weight percentage of cerium dioxide is below 4.7%, the glass's resistance to high-energy electron radiation deteriorates, and the light transmittance decreases significantly after irradiation; if the weight percentage of cerium dioxide exceeds 5.5%, it leads to severe glass discoloration, resulting in low light transmittance before irradiation.

[0033] Lanthanum trioxide and hafnium dioxide are essential components for the high chemical stability of radiation-resistant glass. They can be substituted for each other, and their weight percentage is controlled at 1%-3%, preferably 1%-2%. If the weight percentage of lanthanum trioxide / hafnium dioxide is less than 1%, it is difficult to guarantee the water resistance stability of the glass at HBG2 level; if the weight percentage of lanthanum trioxide / hafnium dioxide exceeds 3%, it will lead to glass crystallization and poor glass formation.

[0034] Ammonium difluoride is an essential component for radiation-resistant glass to achieve high light transmittance. In this invention, the weight percentage of this component is controlled at 0.3%-1%, preferably 0.6%-1%. If the weight percentage of ammonium difluoride is below 0.3%, it is difficult to guarantee good light transmittance in the glass; if the weight percentage of ammonium difluoride exceeds 1%, it leads to glass crystallization and poor glass-forming properties.

[0035] Tests showed that the radiation-resistant glass has a high-energy electron radiation attenuation rate of ≤0.4%, a light transmittance of T≥90.5%@400nm, T≥92%@450nm-1100nm, and a water resistance stability of not less than HBG2 level.

[0036] Some embodiments of the present invention also provide a method for preparing radiation-resistant glass, comprising the following steps: S1 Weigh the corresponding raw materials according to the content of each component of the radiation-resistant glass, place them in a Pt-10Rh crucible, and mix them evenly; the silicon dioxide is introduced in the form of quartz sand, the aluminum oxide is introduced in the form of aluminum oxide, the boron oxide is introduced in the form of boric acid, the sodium oxide is introduced in the form of sodium oxide, sodium carbonate, sodium nitrate or sodium fluoride, the zinc oxide is introduced in the form of zinc oxide, zinc carbonate, zinc nitrate or zinc fluoride, the strontium oxide is introduced in the form of strontium oxide, strontium carbonate, strontium nitrate or strontium fluoride, the cerium dioxide is introduced in the form of cerium dioxide, strontium carbonate, strontium nitrate or strontium fluoride, the lanthanum trioxide is introduced in the form of lanthanum oxide, lanthanum carbonate, lanthanum nitrate or lanthanum fluoride, the hafnium dioxide is introduced in the form of hafnium oxide, hafnium carbonate, hafnium nitrate or hafnium fluoride, and the ammonium difluoride is introduced in the form of ammonium difluoride; S2 involves uniformly mixing the raw materials in a Pt-10Rh crucible and melting it in a high-temperature melting furnace at 1450℃-1550℃ for 3-6 hours. If the melting temperature is below 1450℃, the glass melting effect is poor, and stones may form. If the melting temperature is above 1550℃, the glass viscosity is very low, ammonium difluoride volatilizes significantly, and the glass has a heavy coloration and low light transmittance. If the melting time is less than 3 hours, the glass melting effect is poor, and stones may form. If the melting time is more than 6 hours, the glass melting quality meets the requirements, ammonium difluoride volatilizes significantly, and the glass has a heavy coloration and low light transmittance. The mixture is then clarified and homogenized using mechanical stirring, and after being poured at 1150℃-1200℃ into a preheated mold at 400℃-450℃, it is further melted at 580℃. Annealing at -610℃ for 5-10 hours yields the radiation-resistant glass. If the temperature for die forming is below 1150℃, the glass viscosity is high, resulting in poor fluidity and making die forming impossible. If the temperature for die forming is above 1200℃, the glass viscosity is low, making it difficult to control the die forming rate. If the temperature of the preheating mold is below 400℃, the surface of the glass is prone to cracking and forming microcracks during the forming process. If the temperature of the preheating mold is above 450℃, the glass is prone to sticking to the mold. If the annealing temperature is below 580℃, the annealing effect of the glass is poor, leading to cracking. If the annealing temperature is above 610℃, the glass softens and deforms. If the annealing time is less than 5 hours, the annealing effect of the glass is poor, leading to cracking. If the annealing time is longer than 10 hours, it easily leads to increased energy consumption and higher costs. The mechanical stirring is performed during the melting process using a Pt-20Rh paddle stirrer. The stirring speed can be set to 60-100 rpm, and the time to 1-4 hours. If the stirring speed is below 60 rpm, the glass clarification and homogenization effect is poor, the optical uniformity is poor, and even stones may be present. If the stirring speed is above 100 rpm, the reliability of the stirring equipment deteriorates, making it difficult to operate stably for a long time, and the molten glass is prone to splashing. If the stirring time is less than 1 hour, the air bubbles inside the molten glass do not have enough time to be fully expelled, and streaks do not have enough time to be eliminated, resulting in poor uniformity of composition and temperature. If the stirring time is longer than 4 hours, prolonged high-temperature stirring increases power consumption, equipment wear and tear, and production cycle, thus increasing costs. During the melting process, the furnace is in a weakly neutral environment, and the nitrogen flow rate can be set to 2L / h-5L / h. The purpose is to reduce the oxygen partial pressure in the melting environment, so that most of the cerium ions in the glass exist in a low valence state. If the flow rate is below 2 L / h, the protective atmosphere is insufficient, which easily leads to an oxidizing environment, resulting in decreased radiation resistance, increased bubbles, and poor optical uniformity. If the flow rate is above 5 L / h, the airflow disturbance is too large, the temperature field is unstable, the liquid surface fluctuations entrain bubbles, the atmosphere is too reducing, which easily produces coloring and defects, while also increasing energy consumption.

[0037] Some embodiments of the present invention also provide a high-power solid-state laser driver, which includes a main amplifier system. The main amplifier system includes a partition glass, which is the aforementioned radiation-resistant glass. The radiation-resistant glass, serving as the partition glass for the main amplifier system of the high-power solid-state laser driver, must meet the following requirements: a high laser damage threshold and a low bulk absorption coefficient in the laser operating wavelength band to suppress thermal distortion and beam quality degradation; excellent radiation resistance, not easily generating color centers and transmittance attenuation in strong radiation environments, and high refractive index stability; high chemical stability and long-term photothermal reliability, meeting the high stability and long-lifespan requirements of high-power laser systems.

[0038] Some embodiments of the present invention also provide a spacecraft comprising a solar cell array with the aforementioned radiation-resistant glass disposed thereon. The radiation-resistant glass used in spacecraft must simultaneously meet three major requirements: tolerance to extreme space environments, laser optical performance, and structural and process compatibility.

[0039] Some embodiments of the present invention also provide a radiation protection material, wherein the radiation protection material adopts the above-mentioned radiation-resistant glass. The radiation-resistant glass, used as a radiation protection material, must meet the following requirements: a high linear attenuation coefficient for X-rays and gamma rays, a small half-value layer, and high shielding efficiency; excellent resistance to radiation-induced darkening under high-dose irradiation; low transmittance attenuation; and stable optical performance.

[0040] The radiation protection material can be used as a radiation protection material in fields such as space photovoltaics, satellite thermal control, and nuclear power.

[0041] In the above technical solution, the radiation-resistant glass of the present invention contains a relatively large amount of potassium difluoride, and the melting process using a neutral atmosphere (nitrogen protection) is beneficial for controlling the valence state of cerium ions, mainly Ce. 3+ The low-valence form increases the transmittance of the glass in the blue light region; the radiation-resistant glass contains a high content of cerium dioxide, which can improve the glass's resistance to high-energy electron radiation and ensure that the transmittance of the glass decreases by ≤0.4% after irradiation; and the radiation-resistant glass contains a certain amount of lanthanum trioxide / hafnium dioxide, which significantly improves the chemical stability of the glass and its water resistance stability is not lower than HBG2 level.

[0042] The present invention will be further described below with reference to specific embodiments, but this should not be construed as a limitation on the scope of protection of the present invention. Some non-essential improvements and adjustments made by those skilled in the art based on the above description of the present invention still fall within the scope of protection of the present invention. Example 1

[0043] Weigh the corresponding weights of raw materials according to the glass composition in Table 1, and mix them evenly to obtain a batch. Add the batch to a Pt-10Rh crucible and melt it at 1450℃ for 6 hours under a weakly neutral atmosphere with a nitrogen flow rate of 2L / h. Mechanically stir the glass melt using a Pt-20Rh stirrer at 100rpm for 1 hour. Form the homogenized glass melt into a preheated mold using a pouring method at a forming temperature of 1150℃ and a preheating mold temperature of 400℃. Anneal the formed glass at 580℃ for 10 hours, then turn off the annealing furnace power. Finally, perform performance tests on the obtained radiation-resistant glass. Example 2

[0044] Weigh the corresponding weights of raw materials according to the glass composition in Table 1, and mix them evenly to obtain a batch. Add the batch to a Pt-10Rh crucible and melt it at 1520℃ for 4 hours under a weakly neutral atmosphere with a nitrogen flow rate of 4 L / h. Mechanically stir the molten glass using a Pt-20Rh stirrer at 80 rpm for 2 hours. Form the homogenized molten glass into a preheated mold using a pouring method at a forming temperature of 1200℃ and a preheating mold temperature of 420℃. Anneal the formed glass at 610℃ for 8 hours, then turn off the annealing furnace power. Finally, perform performance tests on the obtained radiation-resistant glass. Example 3

[0045] Weigh the corresponding weights of raw materials according to the glass composition in Table 1, and mix them evenly to obtain a batch. Add the batch to a Pt-10Rh crucible and melt it at 1550℃ for 3 hours under a weakly neutral atmosphere with a nitrogen flow rate of 5 L / h. Mechanically stir the glass melt using a Pt-20Rh stirrer at 60 rpm for 4 hours. Form the homogenized glass melt into a preheated mold using a pouring method at a forming temperature of 1180℃ and a preheating mold temperature of 450℃. Anneal the formed glass at 600℃ for 5 hours, then turn off the annealing furnace power. Finally, perform performance tests on the obtained radiation-resistant glass. Example 4

[0046] Weigh the corresponding weights of raw materials according to the glass composition in Table 1, and mix them evenly to obtain a batch. Add the batch to a Pt-10Rh crucible and melt it at 1550℃ for 5 hours under a weakly neutral atmosphere with a nitrogen flow rate of 3L / h. Mechanically stir the glass melt using a Pt-20Rh stirrer at 80 rpm for 2 hours. Form the homogenized glass melt into a preheated mold using a pouring method at a forming temperature of 1160℃ and a preheating mold temperature of 420℃. Anneal the formed glass at 580℃ for 8 hours, then turn off the annealing furnace power. Finally, perform performance tests on the obtained radiation-resistant glass. Example 5

[0047] Weigh the corresponding weights of raw materials according to the glass composition in Table 1, and mix them evenly to obtain a batch. Add the batch to a Pt-10Rh crucible and melt it at 1550℃ for 4 hours under a weakly neutral atmosphere with a nitrogen flow rate of 3L / h. Mechanically stir the glass melt using a Pt-20Rh stirrer at 80 rpm for 4 hours. Form the homogenized glass melt into a preheated mold using a pouring method at a forming temperature of 1160℃ and a preheating mold temperature of 420℃. Anneal the formed glass at 600℃ for 8 hours, then turn off the annealing furnace power. Finally, perform performance tests on the obtained radiation-resistant glass. Example 6

[0048] Weigh the corresponding weights of raw materials according to the glass composition in Table 1, and mix them evenly to obtain a batch. Add the batch to a Pt-10Rh crucible and melt it at 1550℃ for 5 hours under a weakly neutral atmosphere with a nitrogen flow rate of 3L / h. Mechanically stir the glass melt using a Pt-20Rh stirrer at 80 rpm for 2 hours. Form the homogenized glass melt into a preheated mold using a pouring method at a forming temperature of 1160℃ and a preheating mold temperature of 420℃. Anneal the formed glass at 580℃ for 8 hours, then turn off the annealing furnace power. Finally, perform performance tests on the obtained radiation-resistant glass.

[0049] Comparative Example 1 Weigh the corresponding weights of raw materials according to the glass components in Table 1. The glass preparation method is the same as in Example 6.

[0050] Comparative Example 2 Weigh the corresponding weights of raw materials according to the glass components in Table 1. The glass preparation method is the same as in Example 6.

[0051] Comparative Example 3 Weigh the raw materials according to the glass composition in Table 1, and the glass preparation method is the same as in Example 6. The glass preparation process is carried out under atmospheric conditions.

[0052] Comparative Example 4 Weigh the raw materials according to the glass components in Table 1. The glass formulation and preparation method are the same as in Example 6. During the glass preparation process, the nitrogen flow rate is 6 L / h.

[0053] The radiation-resistant glasses prepared in Examples 1-6 and Comparative Examples 1-4 of the present invention were subjected to performance tests in the following manner, and the specific performance test results are shown in Table 1.

[0054] The light transmittance attenuation rate was tested according to the method specified in GJB 1976A-2021 "Specification for Radiation-resistant Glass Cover Sheets for Space Use".

[0055] The light transmittance was tested according to the method in JC / T 185-2013 "Optical Quartz Glass".

[0056] The coefficient of linear expansion was tested according to the method in GB / T7962.16-2010 "Test methods for colorless optical glass - Part 16: Coefficient of linear expansion, transition temperature and sag temperature".

[0057] Water resistance stability was tested according to the method of GB / T6582-2021 "Particle test method and classification of water resistance of glass at 98℃", and the test results are shown in Table 1.

[0058] Table 1. Composition and performance test results of radiation-resistant glasses in Examples 1-6 and Comparative Examples 1-4

[0059] As shown in Table 1, the radiation-resistant glasses prepared in Examples 1-6 of this invention exhibit excellent comprehensive performance, with a high-energy electron irradiation attenuation rate ≤0.4%, transmittance T≥90.5%@400nm, T≥92%@450nm-1100nm, water resistance stability not lower than HBG2 level, and expansion coefficient matching the battery array substrate. In contrast, the radiation-resistant glass in Comparative Example 1, lacking lanthanum trioxide / hafnium dioxide and ammonium difluoride, suffers from reduced transmittance and poorer chemical stability, resulting in an HBG3 level. The glass in Comparative Example 2, lacking cerium dioxide, exhibits extremely poor resistance to high-energy electron irradiation. The radiation-resistant glass in Comparative Example 3 was melted in an atmospheric environment, leading to a high proportion of cerium ions in the glass in a high valence state (Ce). 4+ The presence of cerium ions in the glass leads to increased coloration and decreased light transmittance. In Comparative Example 4, the radiation-resistant glass was melted under neutral conditions, and cerium ions in the glass primarily existed in the low-valence state (Ce). 3+ The presence of this form results in high light transmittance of the glass.

[0060] The radiation-resistant glass from Example 1 was processed into an ultra-thin flat cover sheet with a thickness of 0.1 mm. This cover sheet was then bonded to the surface of a triple-junction gallium arsenide / silicon-based solar cell using a silicone adhesive layer. This serves as the outer protective shield for the spacecraft's solar cell array, directly exposed to the space environment, ensuring the spacecraft's resistance to high-energy radiation and a service life of ≥15 years. The average transmittance is 92% in the wavelength range of 450 nm-1100 nm, and the photoelectric conversion efficiency is 31%. Under long-term irradiation by high-energy electrons and protons in space, the glass exhibits a high-energy electron irradiation decay rate of 0.4% and no radiation-induced darkening, ensuring efficient photoelectric conversion of the battery. Its high transmittance fully utilizes sunlight, improving battery output power and service life. The linear expansion coefficient matches the battery substrate, allowing it to withstand extreme temperature cycling (-196℃ to +150℃), atomic oxygen erosion, and micro-impact (withstanding a cumulative atomic oxygen flux of 1.0 × 10⁻⁶).26 atom / m 2 It is crack-free, non-detachable, and pollution-free, meeting the requirements of long life, high reliability, and lightweight use in spacecraft such as satellites and space stations. Numerous specific details are set forth in this specification. However, it will be understood that embodiments of the invention may be practiced without these specific details. In some embodiments, well-known methods, structures, and techniques have not been shown in detail so as not to obscure the understanding of this specification.

[0061] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0062] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

[0063] The above description is merely a preferred embodiment of the present invention and is not intended to limit the present invention in any way. Any simple modifications, equivalent changes, and alterations made to the above embodiments based on the technical essence of the present invention shall still fall within the scope of the technical solution of the present invention.

Claims

1. A radiation-resistant glass, characterized in that, It includes the following components by weight percentage: silicon dioxide 60%-70%; sodium oxide 13%-18%; zinc oxide 3%~6%; aluminum oxide 2%-6%; boron oxide 1%-6%; strontium oxide 1%-3%; cerium dioxide 4.7%-5.5%; lanthanum oxide / hafnium dioxide 1%-3%; and ammonium difluoride 0.3%-1%.

2. The radiation-resistant glass as described in claim 1, characterized in that, The radiation-resistant glass comprises the following components in weight percentage: silicon dioxide 65%-69%; sodium oxide 14%-16%; zinc oxide 3%-4%; aluminum oxide 3%-5%; boron oxide 1%-3%; strontium oxide 1%-2%; cerium dioxide 5.0%-5.2%; lanthanum oxide / hafnium dioxide 1%-2%; and ammonium difluoride 0.6%-1%.

3. The radiation-resistant glass as described in claim 1, characterized in that, The radiation-resistant glass has a high-energy electron radiation attenuation rate of ≤0.4%, a light transmittance T≥90.5%@400nm, T≥92%@450nm-1100nm, and a water resistance stability of not less than HBG2 level.

4. A method for preparing radiation-resistant glass, characterized in that, Includes the following steps: S1 Weigh out the corresponding raw materials according to the content of each component of the radiation-resistant glass, and mix them evenly; S2 involves melting the uniformly mixed raw materials at high temperature, clarifying and homogenizing them using mechanical stirring, forming them through a discharge process, and then annealing them to obtain the radiation-resistant glass.

5. The method for preparing radiation-resistant glass as described in claim 4, characterized in that, In step S1, the silicon dioxide is introduced in the form of quartz sand, the aluminum oxide is introduced in the form of aluminum oxide, the boron oxide is introduced in the form of boric acid, the sodium oxide is introduced in the form of sodium oxide, sodium carbonate, sodium nitrate or sodium fluoride, the zinc oxide is introduced in the form of zinc oxide, zinc carbonate, zinc nitrate or zinc fluoride, the strontium oxide is introduced in the form of strontium oxide, strontium carbonate, strontium nitrate or strontium fluoride, the cerium dioxide is introduced in the form of cerium dioxide, strontium carbonate, strontium nitrate or strontium fluoride, the cerium dioxide is introduced in the form of cerium oxide, cerium carbonate, cerium nitrate or cerium fluoride, the lanthanum trioxide is introduced in the form of lanthanum oxide, lanthanum carbonate, lanthanum nitrate or lanthanum fluoride, the hafnium dioxide is introduced in the form of hafnium oxide, hafnium carbonate, hafnium nitrate or hafnium fluoride, and the ammonium difluoride is introduced in the form of ammonium difluoride.

6. The method for preparing radiation-resistant glass as described in claim 4, characterized in that, In step S2, the high-temperature melting temperature is 1450℃-1550℃, and the time is 3h-6h; the high-temperature melting process maintains a weakly neutral environment, and the nitrogen flow rate is 2L / h-5L / h.

7. The method for preparing radiation-resistant glass as described in claim 4, characterized in that, In step S2, the mechanical stirring speed is 60 rpm-100 rpm, and the time is 1 h-4 h; the temperature of the material extrusion forming is 1150℃-1200℃, and the preheating mold temperature is 400℃-450℃; the annealing temperature is 580℃-610℃, and the time is 5 h-10 h.

8. A spacecraft, characterized in that, It includes a solar cell array, on which the radiation-resistant glass according to any one of claims 1-3 is disposed.

9. A high-power solid-state laser driver, characterized in that, It includes a main amplifier system, the main amplifier system including a partition glass, the partition glass being the radiation-resistant glass according to any one of claims 1-3.

10. A radiation protection material, characterized in that, The radiation protection material is the radiation-resistant glass as described in any one of claims 1-3.

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