Resin composition for molding member and semiconductor package using the same

Abstract

This disclosure relates to resin compositions for forming molded components included in semiconductor packages and semiconductor packages manufactured using the resin compositions. Example resin compositions include about 2 wt% to about 10 wt% of epoxy resin, about 2 wt% to about 10 wt% of a curing agent, about 50 wt% to about 90 wt% of filler, about 5 wt% to about 20 wt% of phase change material composite particles, and about 0 wt% to about 5 wt% of additives, wherein the phase change material composite particles include core particles having a phase change material and a shell surrounding the surface of the core particles and comprising organic or inorganic material.

Description

Technical Field

[0001] This disclosure relates to resin compositions for molding components and semiconductor packages using the resin compositions. Background Technology

[0002] With the rapid development of the electronics industry and the demands of users, electronic devices have become more compact and lightweight. Therefore, high integration density of semiconductor devices, as the core component of electronic devices, is desirable. In semiconductor packages, molded components protect the semiconductor chip from the external environment and physical / mechanical elements. In semiconductor packages that include highly integrated semiconductor chips, the molded components are expected to effectively dissipate the heat generated when the semiconductor chip is driven. Summary of the Invention

[0003] This disclosure relates to resin compositions for molded components having improved heat dissipation characteristics and semiconductor packages using the resin compositions.

[0004] In some embodiments, the resin composition for forming the molded components included in a semiconductor package comprises about 2 wt% to about 10 wt% epoxy resin, about 2 wt% to about 10 wt% hardener, about 50 wt% to about 90 wt% filler, about 5 wt% to about 20 wt% phase-change material composite particle, and about 0 wt% to about 5 wt% additive, wherein the phase-change material composite particle comprises: a core particle comprising a phase-change material; and a shell surrounding the surface of the core particle and comprising organic or inorganic material.

[0005] In some embodiments, a semiconductor package includes a semiconductor chip and a molded member disposed on at least one of a top surface, a side surface, and a bottom surface of the semiconductor chip, wherein the molded member includes: a polymer matrix; a filler dispersed in the polymer matrix and including at least one selected from silicon dioxide, aluminum oxide, magnesium oxide, aluminum nitride, and boron nitride; and phase change material composite particles disposed in the polymer matrix, wherein each phase change material composite particle includes: a core particle comprising a phase change material; and a shell surrounding the surface of the core particle and comprising an organic or inorganic material.

[0006] In some embodiments, a semiconductor package includes: a substrate; a semiconductor chip mounted on the substrate; and a molding member located on the substrate and surrounding a top surface and side surface of the semiconductor chip, wherein the molding member includes an epoxy resin-based polymer matrix, fillers dispersed in the polymer matrix, and phase change material composite particles dispersed in the polymer matrix, wherein each phase change material composite particle includes a core particle having a phase change material and a shell surrounding the surface of the core particle, the core particle including at least one selected from paraffin wax, ethylene glycol, fatty acids, esters and their derivatives, the shell including at least one selected from polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide and their derivatives, or including at least one selected from alumina, magnesium oxide, aluminum nitride and boron nitride; and the filler including at least one selected from silica, alumina, magnesium oxide, aluminum nitride and boron nitride. Attached Figure Description

[0007] The embodiments will be more clearly understood through the following detailed description in conjunction with the accompanying drawings.

[0008] Figure 1 This is a cross-sectional view of an example of a semiconductor package.

[0009] Figure 2 yes Figure 1 An example zoomed-in view of region A in the image.

[0010] Figure 3 This is a schematic diagram illustrating an example of a heat dissipation path through phase change material composite particles included in a molded component of a semiconductor package.

[0011] Figure 4 This is a schematic diagram illustrating an example of the relationship between temperature and thermal energy in a molded component comprising phase change material composite particles.

[0012] Figure 5 This is a flowchart illustrating an example of a method for manufacturing semiconductor packages. Detailed Implementation

[0013] The embodiments will be described in detail below with reference to the accompanying drawings.

[0014] The embodiments relate to resin compositions for use as molding members included in semiconductor packages. In some embodiments, the resin composition may be used in a method of manufacturing a semiconductor package, and the cured product of the resin composition may include the molding member included in the semiconductor package.

[0015] In some embodiments, the resin composition may include epoxy resin, hardener, filler, phase change material composite particles, and additives.

[0016] Table 1 shows the content of epoxy resin, hardener, filler, phase change material composite particles and additives in the resin composition, in wt%.

[0017] Table 1

[0018] In some embodiments, the resin composition may include about 2 wt% to about 10 wt% of epoxy resin. In some embodiments, the resin composition may include about 2 wt% to about 10 wt% of a curing agent. In some embodiments, the resin composition may include about 50 wt% to about 90 wt% of filler. In some embodiments, the resin composition may include about 5 wt% to about 20 wt% of phase change material composite particles. In some embodiments, the resin composition may include about 0 wt% to about 5 wt% of additives.

[0019] In some embodiments, the epoxy resin may correspond to the matrix or adhesive of the molded component formed by curing the resin composition. In some embodiments, the epoxy resin may include at least one selected from bisphenol A epoxy resin, bisphenol F epoxy resin, rubber-modified epoxy resin, phenolic epoxy resin, alicyclic epoxy resin, tetrafunctional epoxy resin, acrylic-modified epoxy resin, coal tar-modified epoxy resin, aliphatic chain-modified epoxy resin, cresol phenolic epoxy resin, polyethylene glycol epoxy resin, cashew nut shell epoxy resin, brominated epoxy resin, and phenoxy epoxy resin.

[0020] In some embodiments, the hardener can react with the epoxy resin in the resin composition and cause a curing reaction of the epoxy resin. In some embodiments, the hardener may include at least one selected from anhydride hardeners, cationic hardeners, imidazole hardeners, dicyandiamide hardeners, and amine adduct hardeners.

[0021] In some embodiments, the anhydride curing agent may include at least one selected from dodecyl succinic anhydride (DDSA), polyadipic anhydride (PADA), polysebacic anhydride (PSPA), methyltetrahydrophthalic anhydride (Me-THPA), methylhexahydrophthalic anhydride (Me-HHPA), methylhymicanhydride (MHAC), tetrahydrophthalic anhydride (THPA), phthalic anhydride (PA), trimethylic anhydride (TMA), pyromethylic anhydride (PMDA), benzophenone tetracarboxylic anhydride (BTDA), chlorobridged anhydride (HET), and tetrabromophthalic anhydride (TBPA).

[0022] In some embodiments, the cationic curing agent may include at least one selected from [4-(acetyloxy)phenyl]dimethylsulfonium(OC-6-11)-hexafluoroantimonate (1-), PC-2508, CXC-1742, CXC-1751, N-benzylpyrazinium hexafluoroantimonate (BPH), XNA-2201, and XNA-2202.

[0023] In some embodiments, the imidazole curing agent may include a selection from 2-methylimidazolium, 2-undecylimidazolium, 2-heptadecaylimidazolium, 1,2-dimethylimidazolium, 2-ethyl-4-methylimidazolium, 2-phenylimidazolium, 2-phenyl-4-methylimidazolium, 1-benzyl-2-methylimidazolium, 1-benzyl-2-phenylimidazolium, 1-cyanoethyl-2-methylimidazolium, 1-cyanoethyl-2-undecylimidazolium trimellitate, 1-cyanoethyl-2-phenylimidazolium trimellitate, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-undecylimidazolium] At least one of the following: [1']-ethyl-s-triazine, 2,4-diamino-6-[2'-ethyl-4'-methylimidazolyl-(1')]-ethyl-s-triazine, 2,4-diamino-6-[2'-methylimidazolyl-(1')]-ethyl-s-triazine isocyanuric acid adduct, 2-phenylimidazolyl isocyanuric acid adduct, 2-phenyl-4,5-dihydroxymethylimidazolium, 2-phenyl-4-methyl-5-hydroxymethylimidazolium, 2,3-dihydro-1H-pyrrolo[1,2-a]benzimidazole, 1-dodecyl-2-methyl-3-benzylimidazolium chloride, 2-methylimidazoline, and 2-phenylimidazoline.

[0024] In some embodiments, the filler can be dispersed within the molded component to form heat dissipation paths, thereby reducing the coefficient of thermal expansion and increasing the thermal conductivity of the molded component. The filler may include inorganic materials with excellent heat dissipation properties. In some embodiments, the filler may include at least one selected from silicon dioxide, aluminum oxide, magnesium oxide, aluminum nitride, and boron nitride.

[0025] In some embodiments, the filler may be included in the resin composition as particles or powder. After the resin composition is cured and converted into a molded component, the filler may be uniformly dispersed in the molded component. The filler particles included in the resin composition may be retained in the molded component without volatilization or deformation.

[0026] In some embodiments, the filler included in the resin composition may have a particle size of about 0.1 micrometers to about 100 micrometers. In some embodiments, the filler may have an average particle size of about 1 micrometer to about 50 micrometers.

[0027] In some embodiments, phase change material composite particles can improve the heat dissipation characteristics of molded components and enhance their toughness. In some embodiments, the phase change material composite particles may include a core particle having a phase change material and a shell layer located on the surface of the core particle.

[0028] In some embodiments, the core particles may include a material having a melting point within the operating temperature range of the semiconductor chip (e.g., from about 20°C to about 100°C). In some embodiments, the core particles may include a material having a melting point in the range of about 50°C to about 100°C. In some embodiments, the core particles may include a material that absorbs heat when the temperature of the molding member rises due to heat generated by the semiconductor chip, causing the phase of the core particles to change from a solid to a liquid state. The core particles may also include a material that releases heat when the temperature of the molding member decreases, causing the phase of the core particles to change from a liquid to a solid state.

[0029] In some embodiments, the core particles may include at least one organic material selected from paraffin wax, ethylene glycol, fatty acids, esters, and their derivatives. In some embodiments, the core particles may include at least one selected from heptadecane, n-octadecane, n-nonadecane, n-eicosane, polyethylene glycol, stearic acid, palmitic acid, lauric acid, and their derivatives.

[0030] In some embodiments, the palmitic acid derivative that can be used as the core particle may include at least one selected from methyl palmitate, ethyl palmitate, propyl palmitate, vinyl palmitate, metal palmitate, palmitol, and palmitamide. In some embodiments, the lauric acid derivative that can be used as the core particle may include at least one selected from methyl ester, dodecyl ester, cetyl ester, phenacyl ester, and benzoyl hydrazine.

[0031] In some embodiments, the core particles may have a particle size of about 1 micrometer to about 100 micrometers. In some embodiments, the core particles may have a particle size of about 10 micrometers to about 50 micrometers.

[0032] In some embodiments, a shell, comprising organic or inorganic materials, may be disposed on the surface of the core particle. In some embodiments, the shell may completely cover the surface of the core particle. In some embodiments, the shell may have a thickness of approximately 1 micrometer to approximately 10 micrometers.

[0033] In some implementations, because the shell surrounds the surface of the core particle, the phase change material of the core particle (e.g., liquid or gaseous core particle material) can be confined within the space defined by the shell, even when the phase of the core particle changes due to heat generated during the operation of the semiconductor chip, and the matrix of the molded component may not directly contact the phase change material of the core particle.

[0034] In some embodiments, the shell may include an organic material. For example, the shell may include at least one selected from polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, and their derivatives. In some embodiments, the shell may include an inorganic material. For example, the shell may include at least one selected from alumina, magnesium oxide, aluminum nitride, and boron nitride. In some embodiments, the shell may have a relatively high thermal conductivity.

[0035] In some embodiments, the shell may include a material whose boiling point or melting point does not fall within the operating temperature range of the semiconductor chip (e.g., from about 0°C to about 100°C). In other words, the shell may include a material that does not undergo a phase transition and remains in one state within the operating temperature range of the semiconductor chip (e.g., from about 0°C to about 100°C). In some embodiments, even when the phase of the core particles changes due to heat generated during the operation of the semiconductor chip, the shell may retain its initial shape and phase without a phase transition, and the phase change material of the core particles may be included in the shell.

[0036] In some embodiments, phase change material composite particles can be formed using at least one selected from emulsion polymerization, phase separation, sol-gel method, chemical vapor deposition, physical vapor deposition and crystal growth method.

[0037] In some embodiments, phase change material composite particles can be formed using emulsion polymerization. For example, monomers comprising a core particle and a shell of phase change material can be added to a solvent. Under mechanical stirring, the monomers can polymerize in the solvent, allowing the shell, comprising organic material, to be conformally coated onto the surface of the core particle. Subsequently, the solvent can be dried, and a powder of the phase change material composite particles can be obtained.

[0038] In some embodiments, phase change material composite particles can be formed using phase separation. For example, a first solution can be prepared by adding a polymer shell to a first solvent, and a colloidal solution can be prepared by dispersing core particles comprising the phase change material in the first solution. The colloidal solution can then be dropwise and stirred into a second solvent having physical properties different from those of the first solvent (e.g., polymer solubility in the solvent or solvent polarity), such that the shell can be conformally coated onto the surface of the core particles. The solvent can then be dried, and a powder of the phase change material composite particles can be obtained.

[0039] In some embodiments, additives may include pigments, dyes, leveling agents, foam breaker, adhesion promoters, coupling agents, softeners, or the like. In some embodiments, additives may be used to control reaction rates, improve stability, and adjust color. In some embodiments, the resin composition may include about 0 wt% to about 5 wt% of additives. In other words, additives may be selectively included in the resin composition. In some embodiments, additives may not be included in the resin composition.

[0040] In some embodiments, the filler in the resin composition may include a material having relatively high thermal conductivity, and the resin composition may have a filler content of approximately 50 wt% to approximately 90 wt% based on its total weight. The filler particles may be interconnected, and thus can form heat dissipation paths in the molded component, allowing heat generated during operation of the semiconductor chip to be dissipated to the outside of the semiconductor package through the heat dissipation paths formed by the filler particles.

[0041] When the filler content is below 50 wt%, the filler particles may not connect to each other in the molded component. Therefore, heat dissipation paths may not be adequately formed, and the heat dissipation characteristics of the semiconductor package may be unsatisfactory. When the filler content is above 90 wt%, the modulus of the molded component may increase. Therefore, the molded component may not adequately protect the semiconductor chip from external impacts, and the reliability of the semiconductor package may decrease.

[0042] In some embodiments, the phase change material composite particles in the resin composition may include materials that undergo a phase change within the operating temperature range of the semiconductor chip, for example, materials that change from a solid to a liquid state due to heat generated during the operation of the semiconductor chip. The phase change material composite particles can absorb heat during the phase change, thereby reducing and / or preventing temperature rise in the molded component.

[0043] Phase change material composite particles may further include core particles with organic material, or in some embodiments, may include a shell layer with organic material. The organic material included in the phase change material composite particles may have a lower modulus (or elastic modulus) than the inorganic material. Resin compositions containing such phase change material composite particles may have enhanced crack resistance.

[0044] In some embodiments, the resin composition may have a phase change material composite particle content of approximately 5 wt% to approximately 20 wt% based on the total weight of the resin composition. When the phase change material composite particle content is less than 5 wt%, the heat absorption effect of the molded component may be insignificant. When the phase change material composite particle content is greater than 20 wt%, the toughness of the molded component may decrease, which may also reduce the reliability of the semiconductor package.

[0045] In the resin composition according to the above embodiments, the phase change material composite particles can absorb the heat generated during the operation of the semiconductor chip, and therefore, the semiconductor package comprising the cured product of the resin composition as a molding component can have excellent heat dissipation characteristics. Because the molding component has enhanced toughness, damage to the semiconductor chip due to external stress and deformation can be prevented, and the reliability of the semiconductor package can be improved.

[0046] Figure 1 This is a cross-sectional view of an example of semiconductor package 1. Figure 2 yes Figure 1 An enlarged example view of region A in the image.

[0047] Figure 1 and Figure 2 The semiconductor package 1 can be formed using the resin composition produced.

[0048] refer to Figure 1 and Figure 2 The semiconductor package 1 may include a package substrate 10, a semiconductor chip 20, and a molding member 30. In some embodiments, the molding member 30 may be disposed on the package substrate 10 to surround the top and side surfaces of the semiconductor chip 20. The molding member 30 may correspond to a cured product of a resin composition.

[0049] In some embodiments, the packaging substrate 10 may include a printed circuit board or an interposer. In some embodiments, the packaging substrate 10 may include a carrier substrate. In some embodiments, a redistribution structure including a stacked structure of redistribution insulating layers and redistribution layers may be provided instead of the packaging substrate 10.

[0050] In some implementations, the semiconductor chip 20 may be mounted on the package substrate 10. The semiconductor chip 20 may include logic chips such as a central processing unit (CPU), graphics processing unit (GPU), field-programmable gate array (FPGA), application processor (AP), digital signal processor, cryptographic processor, microprocessor, microcontroller, analog-to-digital converter, or application-specific integrated circuit (ASIC), and / or memory chips including volatile memory (such as dynamic random access memory (DRAM) or static RAM (SRAM)) and non-volatile memory (such as phase-change RAM (PRAM), magnetic RAM (MRAM), resistive RAM (RRAM), or flash memory).

[0051] In some embodiments, multiple semiconductor chips 20 may be mounted horizontally on the packaging substrate 10 and / or stacked vertically on the packaging substrate 10.

[0052] In some embodiments, the molded component 30 may include a matrix 32, a filler 34, and phase change material composite particles 36. The filler 34 and the phase change material composite particles 36 may be dispersed in the matrix 32.

[0053] In some embodiments, matrix 32 may comprise an epoxy resin-based polymer matrix. In some embodiments, matrix 32 may be formed by curing a resin composition according to the embodiments described above, and may comprise an epoxy resin and a hardener. Optionally, when additives are included in the resin composition, the additives may also be included in matrix 32.

[0054] In some embodiments, filler 34 may comprise about 50 wt% to about 90 wt% of an inorganic material-based filler contained in the resin composition. As described above, filler 34 may comprise at least one selected from silica, alumina, magnesium oxide, aluminum nitride, and boron nitride.

[0055] In some embodiments, filler 34 may have a particle size of about 0.1 micrometers to about 100 micrometers. In some embodiments, filler 34 may have an average particle size of about 1 micrometer to about 50 micrometers. In some embodiments, the content of filler 34 may be from about 50 wt% to about 90 wt% based on the total weight of the molded component 30.

[0056] In some embodiments, the phase change material composite particle 36 may include a core particle CP and a shell layer SL. The core particle CP may include a phase change material. The shell layer SL may be disposed on the surface of the core particle CP. In some embodiments, the core particle CP may include a material that absorbs heat when the temperature of the molding member 30 is increased by the heat generated by the semiconductor chip 20, causing the phase of the core particle CP to change from solid to liquid.

[0057] In some embodiments, the core particle CP may include at least one organic material selected from paraffin wax, ethylene glycol, fatty acids, esters, and their derivatives. In some embodiments, the core particle CP may include at least one selected from heptadecane, n-octadecane, n-nonadecane, n-eicosane, polyethylene glycol, stearic acid, palmitic acid, lauric acid, and their derivatives.

[0058] In some embodiments, the palmitic acid derivatives that can be used as core particles CP may include at least one selected from methyl palmitate, ethyl palmitate, propyl palmitate, vinyl palmitate, metal palmitate, palmitol, and palmitamide. In some embodiments, the lauric acid derivatives that can be used as core particles may include at least one selected from methyl palmitate, dodecyl palmitate, cetyl palmitate, acetophenone ester, and benzoyl hydrazine.

[0059] In some embodiments, the core particle CP can have a particle size of about 1 micrometer to about 100 micrometers. In some embodiments, the core particle CP can have a particle size of about 10 micrometers to about 50 micrometers.

[0060] In some embodiments, the shell layer SL may include an organic material. For example, the shell layer SL may include at least one selected from polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, and derivatives thereof.

[0061] In some embodiments, the shell layer SL may comprise an inorganic material. For example, the shell layer SL may comprise at least one selected from alumina, magnesium oxide, aluminum nitride, and boron nitride. In some embodiments, the shell layer SL may have a relatively high thermal conductivity.

[0062] In some embodiments, the shell layer SL can completely cover the surface of the core particle CP. In some embodiments, the shell layer SL can have a thickness of approximately 1 micrometer to approximately 10 micrometers.

[0063] In some embodiments, the content of phase change material composite particles 36 may be from about 5 wt% to about 20 wt%, based on the total weight of the molded component 30.

[0064] In the semiconductor package 1, the phase change material composite particles 36 can absorb the heat generated during the operation of the semiconductor chip 20. Therefore, the semiconductor package 1 can have excellent heat dissipation characteristics. Because the molded component 30 has enhanced toughness, it can prevent damage to the semiconductor chip 20 due to external stress and deformation, and can improve the reliability of the semiconductor package 1.

[0065] Figure 3This is a schematic diagram illustrating an example of a heat dissipation path through phase change material composite particles included in a molded component of a semiconductor package. Figure 4 This is a schematic diagram illustrating an example of the relationship between temperature and thermal energy in a molded component comprising phase change material composite particles.

[0066] refer to Figure 3 The filler 34 and phase change material composite particles 36 can be dispersed and connected to each other in the matrix 32. The filler 34 can include a material with relatively high thermal conductivity. A heat conduction path (HCT) can be formed from the surface of the semiconductor chip 20 in contact with the molding member 30 (e.g., the top surface or side surface) through the particles of the filler 34. For ease of understanding, in Figure 3 The arrows in the diagram schematically illustrate the heat conduction path HCT formed by the particles of filler 34.

[0067] Phase change material composite particles 36 can be dispersed in the molded component 30 and can be connected to the filler 34. The shell layer SL can include a material with relatively high thermal conductivity and can rapidly receive heat from the filler 34 adjacent to or connected to the shell layer SL. The core particle CP within the shell layer SL can include a phase change material that can absorb heat transferred to the core particle CP and undergo a phase change. In other words, heat can be transferred from the surroundings of the phase change material composite particles 36 to the core particle CP and can be absorbed by the core particle CP.

[0068] Figure 4 Temperature profile T_EX1 of a molded component comprising phase change material composite particles is schematically shown. For comparison, in Figure 4 The temperature curve T_CO1 of the molded component excluding phase change material composite particles in the comparative example is also shown by dashed lines.

[0069] refer to Figure 4 In the comparative example, the temperature of the molded component gradually increases as the amount of heat energy increases.

[0070] Conversely, in some embodiments, as the amount of heat energy increases, the temperature of the molded component can gradually increase in a first range R1, stagnate near the first temperature T1 in a second range R2, and increase again in a third range R3.

[0071] Here, the first temperature T1 can correspond to the phase transition temperature of the phase change material. For example, the first temperature T1 can correspond to the melting point of some phase change materials.

[0072] For example, in the first range R1, the phase change material can remain solid, and the temperature of the phase change material (or the temperature of the molded component including the phase change material) can increase due to externally supplied heat. In the second range R2, the phase change material can absorb externally supplied heat and can undergo a phase change from solid to liquid, and during the phase change of the phase change material, the temperature of the molded component may not increase or may increase slightly. In the third range R3, the phase change material can remain liquid, and the temperature of the phase change material can increase due to externally supplied heat.

[0073] like Figure 4 As shown, the molded component including phase change material composite particles can have a lower temperature than the molded component in the comparative example that does not include phase change material composite particles.

[0074] Figure 5 This is a flowchart illustrating an example of a method for manufacturing semiconductor packages.

[0075] refer to Figure 5 A method for manufacturing a semiconductor package may include: in operation S10, mounting a semiconductor chip on a package substrate; and in operation S20, forming a molding member on the package substrate to cover the semiconductor chip.

[0076] In some embodiments, during operation S10, one or more semiconductor chips may be mounted on a package substrate. For example, multiple semiconductor chips may be mounted horizontally on the package substrate, and / or multiple semiconductor chips may be stacked vertically on the package substrate. The semiconductor chips may be electrically connected to connection terminals disposed on or within the package substrate. For example, the semiconductor chips may be electrically connected to the connection terminals in a flip-chip manner or via wire bonding.

[0077] In some embodiments, the packaging substrate may include an interposer or a printed circuit board. In some embodiments, the semiconductor chip may be mounted on a carrier substrate instead of a packaging substrate. In some embodiments, the semiconductor chip may be mounted on a redistribution structure instead of a packaging substrate.

[0078] In some embodiments, during operation S20, the molded component can be formed using the produced resin composition.

[0079] In some embodiments, the molded component using the resin composition can be formed by transfer molding. The molded component is formed by arranging a packaging substrate and a semiconductor chip in the cavity of a transfer mold, placing the resin composition into the transfer mold, and curing the resin composition. To place the resin composition into the cavity of the transfer mold, the resin composition can be formed into tablets or pellets.

[0080] In some embodiments, the molded component using the resin composition can be formed by compression molding. Parts or powder of the resin composition can be placed into the cavity of a mold die, whereby the resin composition can then become a gel. Subsequently, the molded component can be formed by curing the resin composition while the encapsulation substrate and semiconductor chip are tightly placed within the cavity of the mold die.

[0081] Semiconductor packages can be manufactured entirely by performing the process described above.

[0082] In some embodiments, the resin composition for the molding component may include phase change material composite particles, and the phase change material composite particles may include a core particle having a phase change material and a shell layer disposed on the surface of the core particle. The phase change material composite particles may include a phase change material that can undergo a phase change by absorbing heat generated during the operation of the semiconductor chip, and therefore, the semiconductor package comprising the cured product of the resin composition as the molding component can have excellent heat dissipation characteristics. Because the molding component has enhanced toughness due to its low modulus, damage to the semiconductor chip due to external stress and deformation can be prevented, and the reliability of the semiconductor package can be improved.

[0083] While this specification contains numerous specific implementation details, these should not be construed as limiting the scope of any invention or the scope of claims, but rather as descriptions of features specific to particular implementations of a particular invention. Some features described in this specification within the context of separate implementations can also be implemented in combination within a single implementation. Conversely, various features described in the context of a single implementation can also be implemented individually or in any suitable sub-combination in multiple implementations. Furthermore, although features may be described above as functioning in certain combinations, in some cases, one or more features from the combination can be removed from the combination, and the combination can be for sub-combinations or variations thereof.

[0084] Although this disclosure has been shown and described with reference to embodiments thereof, it will be understood that various changes in form and detail may be made herein without departing from the spirit and scope of the appended claims.

Claims

1. A resin composition for forming a molded component included in a semiconductor package, said resin composition comprising: 2wt% to 10wt% epoxy resin; 2wt% to 10wt% of hardener; 50wt% to 90wt% of filler; 5 wt% to 20 wt% of phase change material composite particles; and 0wt% to 5wt% additives, The phase change material composite particles include: Core particles, said core particles comprising phase change materials; and A shell, which surrounds the surface of the core particle and comprises organic or inorganic materials.

2. The resin composition according to claim 1, wherein, The core particles include at least one of paraffin, ethylene glycol, fatty acids, esters, paraffin derivatives, ethylene glycol derivatives, fatty acid derivatives, or ester derivatives.

3. The resin composition according to claim 1, wherein, The core particles include at least one of the following: heptadecane, octadecane, nonadecane, eicosane, polyethylene glycol, stearic acid, palmitic acid, lauric acid, derivatives of heptadecane, derivatives of octadecane, derivatives of nonadecane, derivatives of eicosane, derivatives of polyethylene glycol, derivatives of stearic acid, derivatives of palmitic acid, or derivatives of lauric acid.

4. The resin composition according to claim 1, wherein, The shell layer comprises at least one of polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, a derivative of polyethylene, a derivative of polypropylene, a derivative of polyamide, a derivative of polycarbonate, a derivative of polyurethane, a derivative of polysiloxane, a derivative of polyacrylate, a derivative of polyester, or a derivative of polyimide.

5. The resin composition according to claim 1, wherein, The shell layer includes at least one of aluminum oxide, magnesium oxide, aluminum nitride, or boron nitride.

6. The resin composition according to claim 1, wherein, The melting point of the phase change material in the core particles ranges from 20°C to 100°C.

7. The resin composition according to claim 1, wherein, The core particles have a particle size of 1 micrometer to 100 micrometers.

8. The resin composition according to claim 1, wherein, The shell surrounds the surface of the core particle and has a thickness of 1 micrometer to 10 micrometers.

9. The resin composition according to claim 1, wherein, The filler comprises at least one of silicon dioxide, aluminum oxide, magnesium oxide, aluminum nitride, or boron nitride, and The filler has a particle size ranging from 0.1 micrometers to 100 micrometers.

10. A semiconductor package, the semiconductor package comprising: Semiconductor chips; and A molded component, the molded component being located on at least one of the top surface, side surface, or bottom surface of the semiconductor chip. The molded component includes: Polymer matrix; A filler, said filler being dispersed in the polymer matrix, and comprising at least one of silica, alumina, magnesium oxide, aluminum nitride, or boron nitride; and Multiple phase change material composite particles are disposed within the polymer matrix. Each of the plurality of phase change material composite particles comprises: Core particles, said core particles comprising phase change materials; and A shell, which surrounds the surface of the core particle and comprises organic or inorganic materials.

11. The semiconductor package of claim 10, wherein, The polymer matrix includes epoxy resin.

12. The semiconductor package of claim 10, wherein, The core particles include at least one of paraffin, ethylene glycol, fatty acids, esters, paraffin derivatives, ethylene glycol derivatives, fatty acid derivatives, or ester derivatives.

13. The semiconductor package of claim 10, wherein, The core particles include at least one of the following: heptadecane, octadecane, nonadecane, eicosane, polyethylene glycol, stearic acid, palmitic acid, lauric acid, derivatives of heptadecane, derivatives of octadecane, derivatives of nonadecane, derivatives of eicosane, derivatives of polyethylene glycol, derivatives of stearic acid, derivatives of palmitic acid, or derivatives of lauric acid.

14. The semiconductor package of claim 10, wherein, The shell layer comprises at least one of polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, a derivative of polyethylene, a derivative of polypropylene, a derivative of polyamide, a derivative of polycarbonate, a derivative of polyurethane, a derivative of polysiloxane, a derivative of polyacrylate, a derivative of polyester, or a derivative of polyimide.

15. The semiconductor package of claim 10, wherein, The shell layer includes at least one of aluminum oxide, magnesium oxide, aluminum nitride, or boron nitride.

16. The semiconductor package of claim 10, wherein, The melting point of the phase change material in the core particles ranges from 20°C to 100°C.

17. The semiconductor package of claim 10, wherein, The core particles have a particle size of 1 micrometer to 100 micrometers.

18. The semiconductor package of claim 10, wherein, The shell surrounds the surface of the core particle and has a thickness of 1 micrometer to 10 micrometers.

19. The semiconductor package of claim 10, wherein, The filler has a particle size ranging from 0.1 micrometers to 100 micrometers.

20. A semiconductor package, the semiconductor package comprising: substrate; A semiconductor chip, the semiconductor chip being located on the substrate; and A molding member, the molding member being located on the substrate and surrounding the top and side surfaces of the semiconductor chip. The molded component includes: A polymer matrix, said polymer matrix being based on an epoxy resin; Filler, the filler being dispersed in the polymer matrix; and Multiple phase change material composite particles are dispersed in the polymer matrix. Each of the plurality of phase change material composite particles comprises: Core particles, said core particles comprising phase change materials, and A shell, the shell surrounding the surface of the core particle, The core particles include at least one of paraffin, ethylene glycol, fatty acids, esters, paraffin derivatives, ethylene glycol derivatives, fatty acid derivatives, or ester derivatives. The shell layer includes: At least one of the following: polyethylene, polypropylene, polyamide, polycarbonate, polyurethane, polysiloxane, polyacrylate, polyester, polyimide, derivatives of polyethylene, derivatives of polypropylene, derivatives of polyamide, derivatives of polycarbonate, derivatives of polyurethane, derivatives of polysiloxane, derivatives of polyacrylate, derivatives of polyester, or derivatives of polyimide. At least one of aluminum oxide, magnesium oxide, aluminum nitride, or boron nitride, and The filler includes at least one of silicon dioxide, aluminum oxide, magnesium oxide, aluminum nitride, or boron nitride.

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