Aluminum-silicon alloy encapsulating material, preparation method and application thereof

Abstract

This invention relates to the field of metal packaging materials technology, specifically to an aluminum-silicon alloy packaging material, its preparation method, and its applications. The aluminum-silicon alloy packaging material comprises the following components by weight: aluminum 42%~52%, silicon 45%~53%, phosphorus 0.3%~1%, indium 0.5%~1.5%, iron 0%~0.2%, strontium 0.5%~1.0%, and antimony 0.5%~1.0%. The aluminum-silicon alloy packaging material of this invention is prepared by a melting and casting method, which reduces the preparation cost compared to other processes such as powder metallurgy, spray deposition, and spark plasma sintering. This invention utilizes the unique wetting effect of indium at the aluminum-indium interface to effectively improve the casting defects of the aluminum-silicon alloy, and simultaneously designs a heat treatment process to improve the thermal management performance of the alloy, showing promising application prospects in the field of metal packaging materials.

Description

Technical Field

[0001] This invention relates to the field of metal packaging materials technology, specifically to an aluminum-silicon alloy packaging material, its preparation method, and its application. Background Technology

[0002] In the field of electronic packaging, with the rapid increase in the integration of electronic components, the heat dissipation requirements for packaging materials are becoming increasingly stringent. Simultaneously, the packaging material must ensure that its coefficient of thermal expansion is as close as possible to that of the chip substrate to avoid thermal stress leading to a deterioration in the internal sealing of electronic components. Aluminum-silicon alloys can have their thermal conductivity and coefficient of thermal expansion continuously adjustable within a certain range by changing the silicon content. Figure 1 Al-50Si series high-silicon aluminum alloys have low density, excellent mechanical properties, high thermal conductivity, and a low coefficient of thermal expansion with ceramic substrates or semiconductor materials (7×10). -6 / K~17×10 -6 It is well-matched with K) and is extremely suitable as a new type of packaging material in the fields of electronic packaging and even aerospace, with a very broad application prospect.

[0003] Casting is the most commonly used method for preparing various alloys. Compared with powder metallurgy, spray deposition, and infiltration methods for preparing aluminum-silicon alloys, it has the advantages of simple process, mature technology, and low cost. However, cast parts have poor density and often contain defects such as porosity and shrinkage cavities. According to current research on the thermal conductivity and thermal expansion properties of aluminum-silicon alloys, alloy density has a significant impact on both properties. Impurities and defects within the alloy increase the chances of collisions between electrons and reduce the mean free path of free electrons; therefore, defects have a detrimental effect on the thermal conductivity of the alloy. When aluminum-silicon alloys with low density expand due to heat, some of the expansion moves into the pores, thereby reducing the coefficient of thermal expansion of the alloy.

[0004] Therefore, there is an urgent need in the field for a new aluminum-silicon encapsulation material system, or for improving the overall thermal management performance of aluminum-silicon alloys by employing complex microstructure control and heat treatment methods within existing aluminum-silicon alloy systems. In view of this, the present invention provides an aluminum-silicon alloy encapsulation material, its preparation method, and its applications. Summary of the Invention

[0005] The technical problem to be solved by this invention is to provide an aluminum-silicon alloy packaging material, its preparation method, and its application. The aim is to provide an aluminum-silicon alloy with excellent thermal management performance.

[0006] The technical solution of the present invention to solve the above-mentioned technical problems is as follows: In a first aspect, there is an aluminum-silicon alloy packaging material, which comprises the following components by weight: aluminum 43%~52%, silicon 45%~53%, phosphorus 0.3%~1%, indium 0.5%~1.5%, iron 0%~0.2%, strontium 0.5%~1.0%, and antimony 0.5%~1.0%.

[0007] Phosphorus is introduced through an Al-P master alloy, which must ensure that the iron impurity content is less than 0.2%.

[0008] Indium, a low-melting-point metal with a melting point of approximately 156.6°C, functions as a surface-active element in aluminum-based alloys. Its addition reduces the surface tension and viscosity of the melt, thereby improving fluidity and reducing casting defects, including porosity, shrinkage cavities, and inclusions.

[0009] Based on the above technical solution, the present invention can be further improved as follows.

[0010] Furthermore, the aluminum-silicon alloy packaging material comprises the following components by weight: aluminum 47%~50%, silicon 48%~50%, phosphorus 0.5%~0.8%, indium 0.8%~1.2%, iron 0%~0.15%, strontium 0.5%~0.8%, and antimony 0.5%~0.8%.

[0011] Furthermore, the aluminum-silicon alloy encapsulation material comprises the following components by weight: 48.5% aluminum, 48.5% silicon, 0.5% phosphorus, 1.0% indium, 0-0.2% iron, 0.75% strontium, and 0.75% antimony.

[0012] Furthermore, the aluminum-silicon alloy encapsulation material comprises the following components by weight: 48.6% aluminum, 48.6% silicon, 0.8% phosphorus, 1.0% indium, 0-0.2% iron, 0.5% strontium, and 0.5% antimony.

[0013] Furthermore, the aluminum-silicon alloy packaging material comprises the following components by weight: 47.2% aluminum, 49.8% silicon, 0.8% phosphorus, 1.0% indium, 0-0.2% iron, 0.5% strontium, and 0.5% antimony.

[0014] Furthermore, the aluminum-silicon alloy packaging material comprises the following components by weight: 49.8% aluminum, 47.2% silicon, 0.5% phosphorus, 1.0% indium, 0-0.2% iron, 0.75% strontium, and 0.75% antimony.

[0015] Secondly, a method for preparing an aluminum-silicon alloy packaging material includes the following steps: Step 1: Under inert gas protection, Al and Si elements are placed into a graphite crucible in a medium-frequency melting furnace for complete melting. Then, Al-P master alloy, Sr, Sb and In elements are added in sequence for modification treatment and stirring. After degassing, the mixture is allowed to stand at 1030℃~1050℃ for 2min~5min to obtain alloy liquid. Step 2: Cast the molten alloy to obtain the cast alloy; Step 3: The cast alloy is homogenized and annealed at 530℃-580℃ for 2h~8h.

[0016] Furthermore, the purity of the Al, Si, Sr, Sb, and In elements is not less than 99.9%, and the Al-P master alloy uses Al-5P waffle ingots. The operating parameters of the medium-frequency melting furnace are as follows: operating current of 34A DC, operating voltage of single-phase 220V; excitation current of 400A; and graphite crucible of 2kg.

[0017] Furthermore, the inert gas mentioned in step 1 is argon or other inert gas that ensures it will not react with the metal raw materials, and its purity is 99.99%.

[0018] Furthermore, in step 1, when Al-P master alloy, elemental Sr, elemental Sb, and elemental In are added sequentially for modification treatment and stirred, the stirring is performed 2-3 times. The purpose of stirring is to ensure the uniformity of the smelted alloy composition and to fully utilize the modification effect of the master alloy. The degassing refining agent used in step 1 is hexachloroethane.

[0019] Furthermore, the specific casting steps in step 2 are as follows: the alloy liquid is poured into an iron mold at 550°C for casting, and the outer surface of the ingot is milled off after casting to obtain the cast alloy. In step 3, the cast alloy is homogenized and annealed at 530℃-580℃ for 4h~6h.

[0020] Thirdly, the application of an aluminum-silicon alloy packaging material, wherein the aforementioned aluminum-silicon alloy packaging material is used in the packaging of electronic components.

[0021] The beneficial effects of this invention are: (1) In this invention, a small amount of indium is added to the aluminum-silicon alloy. With the help of the unique wetting effect of indium at the aluminum-indium interface, the casting defects of the alloy are effectively filled, the electron transport barrier is reduced, and the thermal conductivity of the aluminum-silicon alloy is improved. After the indium is added, it is distributed in the aluminum. When the alloy is heated, the expansion of the aluminum phase is reduced, and the thermal expansion coefficient of the aluminum-silicon alloy is reasonably reduced.

[0022] (2) The aluminum-silicon alloy of the present invention has good thermal conductivity, with a thermal conductivity of not less than 165 W / (m·K), and its coefficient of thermal expansion has good matching ability with the electronic substrate, being between 10×10⁻⁶. -6 / K~13×10 -6 Within / K, the material demonstrates excellent thermal management capabilities.

[0023] (3) The aluminum-silicon alloy packaging material of the present invention is prepared by melting and casting. Compared with other processes such as powder metallurgy, spray deposition and spark plasma sintering, the preparation cost is reduced, the raw materials are easy to obtain, and it can be mass-produced industrially. Attached Figure Description

[0024] Figure 1 The current status of research on aluminum-silicon alloy preparation methods; Figure 2 Thermal conductivity tests were conducted on Embodiments 1, 2, Comparative Example 1, and Comparative Example 2 of the invention. Figure 3 The coefficients of thermal expansion of Embodiments 1, 2, Comparative Example 1, and Comparative Example 2 were determined. Figure 4 Density measurements were performed for Examples 1, 2, 1, and 2 of the invention. Detailed Implementation

[0025] The principles and features of this invention are described below. The embodiments given are for illustrative purposes only and are not intended to limit the scope of the invention. Where specific techniques or conditions are not specified in the embodiments, they should be performed according to the techniques or conditions described in the literature in this field, or according to the product instructions. Reagents or instruments whose manufacturers are not specified are all conventional products that can be purchased through legitimate channels.

[0026] Example 1 This embodiment relates to a method for preparing an aluminum-silicon alloy packaging material, including the following steps: (1) Raw material preparation: The raw materials were prepared according to the following mass percentages of the alloy composition: 48.5% Al, 48.5% Si, 0.5% P, 0.75% Sr, 0.75% Sb, and 1.0% In. Al, Si, Sr, Sb, and In were all pure metals with a purity of not less than 99.9%. A portion of the Al element and all of the P element were added through an Al-5P master alloy. Fe element was introduced as an impurity from the Al-P master alloy. Each raw material was weighed three times to obtain a total clean raw material weight of 200 ± 0.5 g.

[0027] (2) Alloy smelting: Place the weighed Al at the bottom of a 2kg graphite crucible, then add Si. Place the graphite crucible containing Al and Si in a medium-frequency melting furnace, and introduce argon gas with a purity of not less than 99.99% above the graphite crucible. After ensuring that the crucible is purged with argon gas for 5 minutes, turn on the melting furnace with a DC current of 34A and a single-phase voltage of 220V. The excitation current is 400±2A. Raise the temperature to 1050℃ to ensure that the Al and Si are completely melted.

[0028] Then, add Al-P master alloy, Sr, Sb and In in sequence, and stir the melt thoroughly with a quartz rod after adding. During the entire melting process, ensure that the alloy melt is covered with argon gas, and keep the argon gas on until the melting is finished. After all the raw materials are melted evenly, add hexachloroethane refining agent to degas and refine the melt. After refining, let the melt stand at 1050℃ for 2 minutes.

[0029] (3) Alloy casting: The melt, after being allowed to stand, was poured into a cubic iron mold preheated to 550°C for 60 minutes. After cooling to room temperature, it was removed to obtain an aluminum-silicon alloy casting. The casting was then milled to remove six surfaces, yielding the cast aluminum-silicon alloy with dimensions of 80mm × 45mm × 20mm.

[0030] (4) Annealing treatment: The obtained cast aluminum-silicon alloy was placed in a muffle furnace for annealing. The annealing temperature was 550℃ and the annealing time was 4 hours. After annealing, the sample was cooled to room temperature with the furnace.

[0031] Example 2 This embodiment relates to a method for preparing an aluminum-silicon alloy packaging material, including the following steps: (1) Raw material preparation: The raw materials were prepared according to the following mass percentages of the alloy composition: 48.6% Al, 48.6% Si, 0.8% P, 0.5% Sr, 0.5% Sb, and 1.0% In. Al, Si, Sr, Sb, and In were all pure metals with a purity of not less than 99.9%. Some Al and all P were added through an Al-5P master alloy. Fe was introduced as an impurity from the Al-P master alloy. Each raw material was weighed three times to obtain a total clean raw material weight of 200 ± 0.5 g.

[0032] (2) Alloy smelting: Place the weighed Al at the bottom of a 2kg graphite crucible, then add Si. Place the graphite crucible containing Al and Si in a medium-frequency melting furnace, and introduce argon gas with a purity of not less than 99.99% above the graphite crucible. After ensuring that the crucible is purged with argon gas for 5 minutes, turn on the melting furnace with a DC current of 34A and a single-phase voltage of 220V. The excitation current is 400±2A. Raise the temperature to 1050℃ to ensure that the Al and Si are completely melted.

[0033] Then, add Al-P master alloy, Sr, Sb and In in sequence, and stir the melt thoroughly with a quartz rod after adding. During the entire melting process, ensure that the alloy melt is covered with argon gas, and keep the argon gas on until the melting is finished. After all the raw materials are melted evenly, add hexachloroethane refining agent to degas and refine the melt. After refining, let the melt stand at 1050℃ for 2 minutes.

[0034] (3) Alloy casting: The melt, after being allowed to stand, was poured into a cubic iron mold preheated to 550°C for 60 minutes. After cooling to room temperature, it was removed to obtain an aluminum-silicon alloy casting. The casting was then milled to remove six surfaces, yielding the cast aluminum-silicon alloy with dimensions of 80mm × 45mm × 20mm.

[0035] (4) Annealing treatment: The obtained cast aluminum-silicon alloy was placed in a muffle furnace for annealing. The annealing temperature was 550℃ and the annealing time was 6 hours. After annealing, the sample was cooled to room temperature with the furnace.

[0036] Example 3 This embodiment relates to a method for preparing an aluminum-silicon alloy packaging material, including the following steps: (1) Raw material preparation: The raw materials were prepared according to the following mass percentages of the alloy composition: 47.2% Al, 49.8% Si, 0.8% P, 0.5% Sr, 0.5% Sb, and 1.0% In. Al, Si, Sr, Sb, and In were all pure metals with a purity of not less than 99.9%. A portion of the Al element and all of the P element were added through an Al-5P master alloy. Fe element was introduced as an impurity from the Al-P master alloy. Each raw material was weighed three times to obtain a total clean raw material mass of 200 ± 0.5 g.

[0037] (2) Alloy smelting: Place the weighed Al at the bottom of a 2kg graphite crucible, then add Si. Place the graphite crucible containing Al and Si in a medium-frequency melting furnace, and introduce argon gas with a purity of not less than 99.99% above the graphite crucible. After ensuring that the crucible is purged with argon gas for 5 minutes, turn on the melting furnace with a DC current of 34A and a single-phase voltage of 220V. The excitation current is 400±2A. Raise the temperature to 1050℃ to ensure that the Al and Si are completely melted.

[0038] Then, add Al-P master alloy, Sr, Sb and In in sequence, and stir the melt thoroughly with a quartz rod after adding. During the entire melting process, ensure that the alloy melt is covered with argon gas, and keep the argon gas on until the melting is finished. After all the raw materials are melted evenly, add hexachloroethane refining agent to degas and refine the melt. After refining, let the melt stand at 1050℃ for 2 minutes.

[0039] (3) Alloy casting: The melt, after being allowed to stand, was poured into a cubic iron mold preheated to 550°C for 60 minutes. After cooling to room temperature, it was removed to obtain an aluminum-silicon alloy casting. The casting was then milled to remove six surfaces, yielding the cast aluminum-silicon alloy with dimensions of 80mm × 45mm × 20mm.

[0040] (4) Annealing treatment: The obtained cast aluminum-silicon alloy was placed in a muffle furnace for annealing. The annealing temperature was 580℃ and the annealing time was 4 hours. After annealing, the sample was cooled to room temperature with the furnace.

[0041] Example 4 This embodiment relates to a method for preparing an aluminum-silicon alloy packaging material, including the following steps: (1) Raw material preparation: The raw materials were prepared according to the following mass percentages of the alloy composition: 49.8% Al, 47.2% Si, 0.5% P, 0.75% Sr, 0.75% Sb, and 1.0% In. Al, Si, Sr, Sb, and In were all pure metals with a purity of not less than 99.9%. Some Al and all P were added through an Al-5P master alloy. Fe was introduced as an impurity from the Al-P master alloy. Each raw material was weighed three times to obtain a total clean raw material mass of 200 ± 0.5 g.

[0042] (2) Alloy smelting: Place the weighed Al at the bottom of a 2kg graphite crucible, then add Si. Place the graphite crucible containing Al and Si in a medium-frequency melting furnace, and introduce argon gas with a purity of not less than 99.99% above the graphite crucible. After ensuring that the crucible is purged with argon gas for 5 minutes, turn on the melting furnace with a DC current of 34A and a single-phase voltage of 220V. The excitation current is 400±2A. Raise the temperature to 1050℃ to ensure that the Al and Si are completely melted.

[0043] Then, add Al-P master alloy, Sr, Sb and In in sequence, and stir the melt thoroughly with a quartz rod after adding. During the entire melting process, ensure that the alloy melt is covered with argon gas, and keep the argon gas on until the melting is finished. After all the raw materials are melted evenly, add hexachloroethane refining agent to degas and refine the melt. After refining, let the melt stand at 1050℃ for 2 minutes.

[0044] (3) Alloy casting: The melt, after being allowed to stand, was poured into a cubic iron mold preheated to 550°C for 60 minutes. After cooling to room temperature, it was removed to obtain an aluminum-silicon alloy casting. The casting was then milled to remove six surfaces, yielding the cast aluminum-silicon alloy with dimensions of 80mm × 45mm × 20mm.

[0045] (4) Annealing treatment: The obtained cast aluminum-silicon alloy was placed in a muffle furnace for annealing. The annealing temperature was 530℃ and the annealing time was 6 hours. After annealing, the sample was cooled to room temperature with the furnace.

[0046] Comparative Example 1 Replace the raw material mass percentages in step one of Example 1 with: 49%Al, 49%Si, 0.5%P, 0.75%Sr, and 0.75%Sb. Simultaneously omit step four, while keeping other conditions the same as in Example 1.

[0047] Comparative Example 2 Step four in Example 1 is omitted, and other conditions are the same as in Example 1.

[0048] Comparative Example 3 Replace the raw material mass percentages in step one of Example 1 with: 49% Al, 49% Si, 0.5% P, 0.75% Sr, and 0.75% Sb, while keeping other conditions the same as in Example 1.

[0049] Test case The aluminum-silicon alloys prepared in Examples 1-2 and Comparative Examples 1-2 were used as experimental samples for thermal conductivity testing, coefficient of thermal expansion determination, and density determination. Specifically, the national standard for thermal conductivity was GB / T 22588-2008, which specifies the measurement of thermal diffusivity or thermal conductivity using the flash method; the national standard for coefficient of thermal expansion was GB / T 4339-2008, which specifies the determination of specific parameters of thermal expansion of metals; and the national standard for density testing was GB / T 4472-2011, which specifies the determination of density and relative density of chemical products. 4.2.3 Method 2: Hydrostatic weighing method.

[0050] Among them, thermal conductivity test: The thermal conductivity of the samples in this embodiment and comparative example was tested using a NETZSCH LFA 467Hyper Flash laser thermal conductivity meter manufactured by NETZSCH GmbH, Germany. To ensure the accuracy of the test values, three circular pieces with a size of Φ12.5mm × 2.5mm were cut from each aluminum-silicon alloy casting using a wire EDM machine. The surface of the sample was then polished smooth sequentially with 400#, 800#, and 1000# sandpaper, ensuring that the parallelism error of the sample surface was within 0.5% of the thickness. The surface was then cleaned with anhydrous ethanol and dried. During testing, a layer of graphite was coated on the surface of the circular pieces to increase the infrared emissivity and light absorption ratio of the sample surface.

[0051] To ensure the authenticity and reliability of the test results, three flash points were selected from the sample surface for each test, and the average value was taken. That is, the thermal conductivity of each aluminum-silicon alloy casting should be the average of nine flash points. To ensure higher accuracy in measuring thermal conductivity using the flash method, the reference standard sample required for the test should be a graphite standard sample with a thermal diffusivity closer to that of the aluminum-silicon alloy. The test temperature was set at 35℃.

[0052] Thermal expansion coefficient test: The coefficients of thermal expansion of the samples in this embodiment and comparative example were tested using a NETZSCH DIL402 Expedis Classic thermal dilatometer manufactured by NETZSCH GmbH, Germany. Test samples were prepared by wire cutting 5.5mm × 5.5mm × 25mm prisms from the middle of each aluminum-silicon alloy casting. The surfaces of the prism samples were then smoothed sequentially using 400#, 800#, and 1000# sandpaper, followed by cleaning with anhydrous ethanol and drying. Alumina was used as the baseline standard, the heating rate was 2℃ / min, and the test range was 30℃~150℃.

[0053] The test results are shown in Table 1 below. Figures 2 to 4 : Table 1 Depend on Figures 2 to 4As shown in Table 1, Comparative Example 2, compared to Comparative Example 1, added 1.0 wt% indium, resulting in an approximately 11% improvement in thermal conductivity. Comparative Example 3, compared to Comparative Example 1, involved heat treatment of an indium-free aluminum-silicon alloy, resulting in a 10% improvement in thermal conductivity. Example 1, compared to Comparative Example 2, involved heat treatment of the cast alloy at 550°C for 4 hours, resulting in an approximately 25% improvement in thermal conductivity. Example 1, compared to Comparative Example 3, with the same heat treatment process, showed a 26% increase in thermal conductivity due to the addition of indium. Example 1, compared to Comparative Example 1, not only added indium to improve alloy density but also underwent heat treatment, resulting in a 39% increase in thermal conductivity.

[0054] Adding indium to the alloy preferentially fills the casting defects of the aluminum phase, improving the electron transport efficiency and thermal conductivity. After heat treatment, the eutectic silicon morphology within the alloy changes from fibrous to fine, uniformly distributed particles, reducing phonon transport obstacles at the aluminum-silicon interface and further enhancing thermal conductivity. However, since indium itself has poor thermal conductivity, prolonged heat treatment causes indium particles to aggregate and grow, shortening electron transport distances and leading to a decrease in thermal conductivity.

[0055] Indium exhibits excellent interfacial wetting at the aluminum-indium interface. The addition of indium disrupts the aluminum-silicon interface, thus reducing the expansion of aluminum in the alloy during thermal expansion and consequently decreasing the overall coefficient of thermal expansion. Heat treatment of indium-containing alloys primarily eliminates casting stress and improves the eutectic silicon morphology, significantly enhancing thermal conductivity. However, heat treatment can also cause the indium particles within the alloy to aggregate, partially eliminating the aluminum-silicon interface and leading to a renewed increase in the coefficient of thermal expansion upon heating.

[0056] In summary, the aluminum-silicon alloy encapsulation material of this invention, prepared by melting and casting, reduces manufacturing costs compared to other processes such as powder metallurgy, spray deposition, and spark plasma sintering. This invention utilizes the unique wetting effect of indium at the aluminum-indium interface to effectively improve casting defects in the aluminum-silicon alloy, and the designed heat treatment process enhances the alloy's thermal management performance, demonstrating promising application prospects in the field of metal encapsulation materials.

[0057] Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention. Those skilled in the art can make changes, modifications, substitutions and variations to the above embodiments within the scope of the present invention.

Claims

1. An aluminum-silicon alloy packaging material, characterized in that, The aluminum-silicon alloy encapsulation material comprises the following components by weight: aluminum 43%~52%, silicon 45%~53%, phosphorus 0.3%~1%, indium 0.5%~1.5%, iron 0%~0.2%, strontium 0.5%~1.0%, and antimony 0.5%~1.0%.

2. The aluminum-silicon alloy packaging material according to claim 1, characterized in that, The aluminum-silicon alloy encapsulation material comprises the following components by weight: aluminum 47%~50%, silicon 48%~50%, phosphorus 0.5%~0.8%, indium 0.8%~1.2%, iron 0%~0.15%, strontium 0.5%~0.8%, and antimony 0.5%~0.8%.

3. The aluminum-silicon alloy packaging material according to claim 1, characterized in that, The aluminum-silicon alloy encapsulation material comprises the following components by weight: 48.5% aluminum, 48.5% silicon, 0.5% phosphorus, 1.0% indium, 0-0.2% iron, 0.75% strontium, and 0.75% antimony.

4. The aluminum-silicon alloy packaging material according to claim 1, characterized in that, The aluminum-silicon alloy encapsulation material comprises the following components by weight: 48.6% aluminum, 48.6% silicon, 0.8% phosphorus, 1.0% indium, 0-0.2% iron, 0.5% strontium, and 0.5% antimony.

5. A method for preparing an aluminum-silicon alloy packaging material according to any one of claims 1 to 4, characterized in that, Includes the following steps: Step 1: Under inert gas protection, Al and Si elements are placed into a graphite crucible in a medium-frequency melting furnace for complete melting. Then, Al-P master alloy, Sr, Sb and In elements are added in sequence for modification treatment and stirring. After degassing, the mixture is allowed to stand at 1030℃~1050℃ for 2min~5min to obtain alloy liquid. Step 2: Cast the molten alloy to obtain the cast alloy; Step 3: The cast alloy is homogenized and annealed at 530℃-580℃ for 2h~8h.

6. The method for preparing an aluminum-silicon alloy packaging material according to claim 5, characterized in that, The purity of the Al, Si, Sr, Sb and In elements is not less than 99.9%, and the Al-P master alloy uses Al-5P waffle ingot. The operating parameters of the medium-frequency melting furnace are as follows: operating current of 34A DC, operating voltage of single-phase 220V; excitation current of 400A; and graphite crucible of 2kg.

7. The method for preparing an aluminum-silicon alloy packaging material according to claim 5, characterized in that, The inert gas mentioned in step 1 is argon with a purity of 99.99%.

8. The method for preparing an aluminum-silicon alloy packaging material according to claim 5, characterized in that, In step 1, when Al-P master alloy, Sr element, Sb element and In element are added sequentially for modification treatment and stirred, the stirring is carried out 2 to 3 times. The degassing refining agent used in step 1 is hexachloroethane.

9. The method for preparing an aluminum-silicon alloy packaging material according to claim 5, characterized in that, The specific casting steps in step 2 are as follows: the alloy liquid is poured into an iron mold at 550°C for casting, and the outer surface of the ingot is milled off after casting to obtain the cast alloy. In step 3, the cast alloy is homogenized and annealed at 530℃-580℃ for 4h~6h.

10. An application of an aluminum-silicon alloy packaging material, characterized in that, The aluminum-silicon alloy packaging material according to any one of claims 1 to 4 is used in the packaging of electronic components.

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