Preparation mold and method for grinding and polishing sample of the seed crystal region

Abstract

A mold and method for preparing a polished sample of the crystal-leading part are disclosed. The mold includes a lower mold, a middle mold, and an upper mold. The middle mold is positioned between the lower mold and the upper mold, and the middle mold, lower mold, and upper mold together form a mold cavity. The inner bottom surface of the lower mold has a first limiting part for limiting one end of the crystal-leading part, and the upper mold has a second limiting part for the other end of the crystal-leading part to pass through. The first limiting part and the second limiting part are opposite to each other and coaxially arranged so that the main body of the crystal-leading part is positioned in the mold cavity. The upper mold also has a filling part communicating with the mold cavity for filling the mold cavity with insert material. This application can provide stable support and protection for the crystal-leading part with weak shear resistance, significantly improve the integrity of the sample preparation and the yield. On this basis, it enables the wire cutting, grinding, and polishing processes to be carried out smoothly, and provides reliable technical support for accurately tracing the source of penetrating central defects in the single crystal growth process.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more specifically to a mold and method for preparing a grinding and polishing sample of the lead-in part. Background Technology

[0002] The Czochralski method is currently the main method for preparing single-crystal ingots. The core of the early stages of the crystal pulling process lies in the fusion of the seed crystal, temperature control, and the crystal pulling process. The necking process during the crystal pulling stage can effectively eliminate defects such as dislocations and twins generated during crystal growth. In actual production and quality control, when a through-hole center defect appears in a single-crystal ingot, in addition to routine testing of the constant-diameter portion, it is often necessary to sample and analyze the crystal pulling portion in order to accurately locate the source of the defect.

[0003] For the sample preparation and analysis process of the seed crystal, the current practice is to first use ceramic scissors to cut off the seed crystal, then use adhesive to fix the two ends of the seed crystal, and then use single-wire cutting technology to cut open the seed crystal to obtain the initial sample for internal observation.

[0004] However, the seed crystal samples cut using existing sample preparation techniques are too thin and long, and lack effective support and protection around them, making the samples very easy to break or drop. This makes it difficult to carry out subsequent grinding and polishing processes smoothly, which seriously limits the feasibility of using this part for fine defect observation and analysis. Summary of the Invention

[0005] The summary section introduces a series of simplified concepts, which will be further explained in detail in the detailed description section. This summary section is not intended to limit the key and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0006] To address the existing problems, this application provides a mold for preparing a grinding and polishing sample of the crystal-leading part, including a lower mold, a middle mold, and an upper mold. The middle mold is configured to be disposed between the lower mold and the upper mold, and the middle mold, the lower mold, and the upper mold together form a mold cavity. The inner bottom surface of the lower mold is provided with a first limiting part for limiting one end of the crystal-drawing part, and the upper mold is provided with a second limiting part for the other end of the crystal-drawing part to pass through; the first limiting part and the second limiting part are opposite to each other and arranged coaxially, so that the main body of the crystal-drawing part is positioned in the mold cavity. The upper mold is also provided with an injection section that communicates with the mold cavity, for injecting insert material into the mold cavity.

[0007] In some embodiments of this application, the first limiting part is a stepped groove disposed at the center of the bottom surface of the lower mold, and the second limiting part is a central hole opened at the center of the upper mold.

[0008] In some embodiments of this application, the second limiting part is connected to the outer edge of the upper mold by a plurality of symmetrically distributed support ribs, and the filling part is a hollow area formed by the support ribs, the second limiting part and the outer edge.

[0009] In some embodiments of this application, the lower mold is a container-shaped base structure with an upwardly extending first peripheral wall, the upper mold is a container-shaped lid structure with a downwardly extending second peripheral wall, and the middle mold is a hollow cylindrical structure with openings at both ends; one end of the middle mold is fitted into the inner peripheral surface of the first peripheral wall, and the other end of the middle mold is fitted into the inner peripheral surface of the second peripheral wall, and the outer contour dimensions of the cross-sections at both ends of the middle mold are respectively adapted to the dimensions of the first peripheral wall and the second peripheral wall.

[0010] In some embodiments of this application, the lower mold, the middle mold, and the upper mold have mutually compatible cross-sectional shapes, the cross-sectional shapes being selected from one of a circle, a square, or other symmetrical polygons.

[0011] In some embodiments of this application, the lower mold, the middle mold, and the upper mold adopt a separate structure that is independent and detachable.

[0012] This application further provides a method for preparing a polished sample of the crystal-driving site, using the mold described in any of the above claims, comprising the following steps: The crystal-drawing part to be analyzed is placed in the mold, with one end of the crystal-drawing part limited to the first limiting part of the lower mold and the other end passing through the second limiting part of the upper mold, so that the main body of the crystal-drawing part is positioned in the mold cavity. Insert material is injected into the mold cavity through the injection section of the upper mold; After the inlay material has solidified, a demolding process is performed to obtain a solidified inlay that encapsulates the crystal-leading portion; The solidified inlay sample is cut using wire cutting to obtain a half-section sample of the inlay lead-in portion; The half-section sample of the embedded crystal-leading part is subjected to grinding and polishing processes in sequence to obtain a ground and polished sample of the crystal-leading part.

[0013] In some embodiments of this application, the mounting material comprises a mixture of a transparent resin material and a curing agent.

[0014] In some embodiments of this application, in the step of cutting the solidified inlay using wire cutting, the cutting surface is arranged parallel to the geometric center plane of the crystal-leading part, and the cutting surface has a preset offset distance relative to the geometric center plane.

[0015] In some embodiments of this application, the wire cutting method is single-sided cutting or double-sided cutting.

[0016] The mold and method for preparing the grinding and polishing sample of the crystal-leading part disclosed in this application limit one end of the crystal-leading part by the first limiting part of the lower mold, and allow the other end of the crystal-leading part to pass upward through the second limiting part of the upper mold. Utilizing the coaxial arrangement of the first and second limiting parts, the slender and fragile crystal-leading part is accurately positioned and vertically fixed within the mold cavity. Insert material is added into the mold cavity through the injection part to cover the crystal-leading part, providing stable support and protection for the crystal-leading part with weak shear resistance. This effectively solves the problem that the crystal-leading part is easily broken or dropped due to lack of peripheral protection, significantly improving sample integrity and yield. Furthermore, the prepared solidified insert provides a stable environment for subsequent processing, enabling the wire cutting, grinding, and polishing processes, which were previously difficult to perform on slender crystal-leading parts, to be carried out smoothly. The ground and polished sample of the crystal-leading part after wire cutting, grinding, and polishing has a high degree of surface flatness, greatly facilitating subsequent detailed defect observation and analysis of the crystal-leading part, and providing reliable technical support for accurately tracing the source of penetrating central defects in the single crystal growth process. Attached Figure Description

[0017] The following drawings, which are incorporated herein by reference and are used to understand this application, illustrate embodiments of the invention and their descriptions to explain the principles of the invention.

[0018] In the attached image: Figure 1 A schematic diagram of a structure in which the lead-in portion is placed within a mold according to a specific embodiment of this application is shown.

[0019] Figure 2 A schematic diagram of the lower mold according to a specific embodiment of this application is shown.

[0020] Figure 3 A schematic diagram of the structure of a medium-sized mold according to a specific embodiment of this application is shown.

[0021] Figure 4 A schematic diagram of the upper mold according to a specific embodiment of this application is shown.

[0022] Figure 5 A flowchart illustrating a method for preparing a grinding and polishing sample of the lead-in region according to a specific embodiment of this application is shown.

[0023] Figure 6 The diagram illustrates single-sided cutting and double-sided cutting according to a specific embodiment of this application.

[0024] Figure 7 A diagram showing the definition of Total Thickness Variation (TTV) is presented. Detailed Implementation

[0025] The following description provides numerous specific details to offer a more thorough understanding of this application. However, it will be apparent to those skilled in the art that this application can be practiced without one or more of these details. In other instances, certain technical features well-known in the art have not been described to avoid confusion with this application.

[0026] It should be understood that this application can be implemented in various forms and should not be construed as limited to the embodiments set forth herein. Rather, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of this application to those skilled in the art. In the drawings, for clarity, the dimensions and relative dimensions of layers and regions may be exaggerated. The same reference numerals denote the same elements throughout.

[0027] It should be understood that when an element or layer is referred to as "on," "adjacent to," "connected to," or "coupled to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. Conversely, when an element is referred to as "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc., may be used to describe various elements, components, areas, layers, and / or portions, these elements, components, areas, layers, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, area, layer, or portion from another element, component, area, layer, or portion. Therefore, without departing from the teachings of this application, the first element, component, area, layer, or portion discussed below may be referred to as the second element, component, area, layer, or portion.

[0028] Spatial relation terms such as “below,” “under,” “below,” “below,” “above,” “above,” etc., are used herein for convenience of description to describe the relationship between one element or feature shown in the figure and other elements or features. It should be understood that, in addition to the orientation shown in the figure, spatial relation terms are intended to also include different orientations of the device in use and operation. For example, if the device in the figure is flipped, then the element or feature described as “below” or “below” other elements or features will be oriented “above” other elements or features. Therefore, the exemplary terms “below” and “under” can include both above and below orientations. The device may be otherwise oriented (rotated 90 degrees or otherwise) and the spatial descriptive terms used herein will be interpreted accordingly.

[0029] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the scope of this application. When used herein, the singular forms “a,” “an,” and “the” are also intended to include the plural forms unless the context clearly indicates otherwise. It should also be understood that the terms “comprising” and / or “including,” when used in this specification, identify the presence of the stated features, integers, steps, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and / or groups. When used herein, the term “and / or” includes any and all combinations of the associated listed items.

[0030] In the production of mainstream 12-inch to 18-inch single crystal rods, the diameter of the crystal-leading part is usually 3mm to 8mm, and the length is generally 200mm to 400mm. This specific geometry results in extremely high tensile strength but low shear strength.

[0031] For the sample preparation and analysis process of the seed crystal, the current practice is to first use ceramic scissors to cut off the seed crystal, then use adhesive to fix the two ends of the seed crystal, and then use single-wire cutting technology to cut open the seed crystal to obtain the initial sample for internal observation.

[0032] However, the seed crystal samples cut using existing sample preparation techniques are too thin and long, and lack effective support and protection around them, making the samples very easy to break or drop. This makes it difficult to carry out subsequent grinding and polishing processes smoothly, which seriously limits the feasibility of using this part for fine defect observation and analysis.

[0033] To fully understand this application, detailed steps and structures will be presented in the following description to illustrate the technical solutions proposed in this application. Preferred embodiments of this application are described in detail below; however, in addition to these detailed descriptions, this application may have other implementation methods.

[0034] Example 1 Below, for reference Figures 1-4 This application describes a mold for preparing a polished sample of a crystal-driving portion according to an embodiment of the present application. The mold includes a lower mold 110, a middle mold 120, and an upper mold 130. The middle mold 120 is configured between the lower mold 110 and the upper mold 130, and the middle mold 120, the lower mold 110, and the upper mold 130 together form a mold cavity. The inner bottom surface of the lower mold 110 is provided with a first limiting part 111 for limiting one end of the crystal-driving portion 200, and the upper mold 130 is provided with a second limiting part 131 for the other end of the crystal-driving portion 200 to pass through. The first limiting part 111 and the second limiting part 131 are opposite to each other and coaxially arranged so that the main body of the crystal-driving portion 200 is positioned in the mold cavity. The upper mold 130 is also provided with an injection part 132 communicating with the mold cavity for injecting insert material into the mold cavity.

[0035] When using this mold, the crystal-drawing part 200 to be analyzed must first be placed in the mold. One end of the crystal-drawing part 200 is limited by the first limiting part 111 of the lower mold 110, while the other end of the crystal-drawing part 200 passes upward through the second limiting part 131 of the upper mold 130. This utilizes the coaxial arrangement of the first limiting part 111 and the second limiting part 131 to ensure that the slender and fragile crystal-drawing part 200 is accurately positioned and vertically fixed within the mold cavity. This positioning method effectively avoids any tilting or displacement of the crystal-drawing part 200 during the subsequent injection of the insert material.

[0036] After positioning is completed, the prepared insert material is injected into the mold cavity through the injection section 132 of the upper mold 130. After filling, it is allowed to fully solidify under the set temperature and time conditions. Finally, the mold is disassembled and demolded to obtain a solidified insert that completely covers the crystal-leading part 200. At this time, the solidified insert material covers the periphery of the crystal-leading part 200, providing stable support and protection for the crystal-leading part 200, which has weak shear resistance. This solves the problem of the crystal-leading part 200 being easily broken by impact or drop due to the lack of peripheral protection in the prior art, and improves the structural integrity and sample yield of the polished sample of the crystal-leading part in the preparation process from the source.

[0037] Based on this, relying on the stable processing environment provided by the solidified mounting, the wire cutting, grinding, and polishing processes that were originally difficult to carry out on the slender crystal-leading parts 200 can be successfully implemented. Moreover, the grinding and polishing samples of the crystal-leading parts after wire cutting, grinding, and polishing have a high degree of surface flatness, which greatly facilitates the subsequent fine observation and analysis of defects in the crystal-leading parts 200, and provides reliable technical support for accurately tracing the source of penetrating central defects in the single crystal growth process.

[0038] In some embodiments, the lower mold 110, the middle mold 120, and the upper mold 130 adopt a separate structure that is independent and detachable. On the one hand, the lower mold 110, the middle mold 120, and the upper mold 130 can be quickly assembled into a complete mold cavity during the sample making process, and after curing, they can be easily demolded efficiently through physical disassembly, and the mold can be reused. On the other hand, the separate structure allows for targeted modular replacement or flexible combination of components in the lower mold 110, the middle mold 120, and the upper mold 130 according to different lead specifications or specific requirements. For example, multiple sets of upper molds 130 can be designed and manufactured, and a suitable upper mold 130 can be selected as needed.

[0039] It is understood that the technical solution of this application does not exclude the possibility that the lower mold 110, the middle mold 120 and the upper mold 130 adopt a non-separate integrated structure.

[0040] In some embodiments, such as Figure 2 As shown, the lower mold 110 adopts a container-shaped base structure, and its longitudinal section presents a U-shape composed of a base plate and an upwardly extending first peripheral wall. The container-shaped base structure has an upwardly opening first receiving cavity, and its cross-sectional inner contour dimensions are adapted to the outer diameter of the middle mold 120, so that the middle mold 120 can be precisely fitted into the inner peripheral surface of the first peripheral wall, thereby ensuring the stability and sealing of the entire mold after assembly.

[0041] In some embodiments, such as Figure 4 As shown, the upper mold 130 adopts a container-shaped lid structure, and its longitudinal section presents an inverted U-shape formed by a top plate and a downwardly extending second peripheral wall. The container-shaped lid structure has a downwardly opening second receiving cavity, and its cross-sectional inner contour dimensions are adapted to the outer diameter of the middle mold 120, so that the top of the middle mold 120 can be precisely fitted into the inner peripheral surface of the second peripheral wall, thereby ensuring the stability and sealing of the entire mold after assembly.

[0042] In some embodiments, such as Figure 3 As shown, the intermediate mold 120 adopts a hollow cylindrical structure with openings at both ends, and its longitudinal section presents a pair of parallel straight lines. The outer contour dimension of the cross-section at one end of the intermediate mold 120 is adapted to the upward-opening first receiving cavity formed in the lower mold 110, while the outer contour dimension of the cross-section at the other end of the intermediate mold 120 is adapted to the downward-opening second receiving cavity formed in the upper mold 130. That is, the outer contour dimensions of the cross-section at both ends of the intermediate mold 120 are adapted to the dimensions of the first and second peripheral walls, respectively, so that the two ends of the intermediate mold 120 can be precisely and securely fitted into the inner peripheral surfaces of the first and second peripheral walls. Through this assembly method, the intermediate mold 120, the upper mold 130, and the lower mold 110 are combined to form a mold cavity, which not only ensures the overall physical stability of the mold but also effectively prevents leakage of the insert material during the injection process.

[0043] Because the intermediate mold 120 has a hollow cylindrical structure, its inner wall directly defines the outline of the cured sample, thus ensuring that the resin surrounding the crystal-leading part 200 has a regular geometric shape and a uniform protective layer thickness. In practical applications, intermediate molds 120 of different heights can be flexibly selected for assembly according to the length specifications of the crystal-leading part 200 to be analyzed, so as to achieve modular adaptation for samples of different sizes.

[0044] In some embodiments, the lower mold 110, the middle mold 120, and the upper mold 130 have mutually compatible cross-sectional shapes, such as rectangular cross-sections. Of course, to accommodate different sample preparation requirements, this application does not exclude circular, square, or other symmetrical polygonal cross-sectional shapes. Regardless of the geometry used, the cross-sectional dimensions of the lower mold 110, the middle mold 120, and the upper mold 130 will remain mutually compatible to ensure that these three components can fit together tightly during assembly, forming a stable and sealed mold cavity, thereby providing reliable spatial support for the centering and curing of the crystal-leading portion 200.

[0045] In some embodiments, the first limiting part 111 is located at the center of the inner bottom surface of the lower mold 110, and correspondingly, the second limiting part 131 is located at the center of the upper mold 130. Arranging the limiting parts at the center not only facilitates the alignment of the crystal-leading part 200 within the mold, but also ensures that after the insertion of the insert material, the insert material can form a uniform and symmetrical coating around the crystal-leading part 200. This centrally symmetrical layout allows for a more balanced stress distribution during the curing process, effectively reducing the risk of displacement of the crystal-leading part 200 or stress concentration within the sample due to uneven material shrinkage, thereby significantly improving the reliability of the sample preparation process. In other embodiments, the first limiting part 111 and the second limiting part 131 can also be located at any other suitable position outside the center, as long as the first limiting part 111 and the second limiting part 131 are spatially opposite and coaxially arranged, ensuring that the slender crystal-leading part 200 obtains precise vertical positioning and stable support within the mold cavity.

[0046] For example, such as Figure 2 As shown, the first limiting part 111 can be a stepped groove located at the center of the inner bottom surface of the lower mold 110. Its structure is formed by coaxially stacking multiple cylindrical holes of different diameters that decrease in size from top to bottom. In specific construction, a protruding structure can be provided at the center of the inner bottom surface of the lower mold 110, and the stepped groove can be formed within the protruding structure; or, the stepped groove can be directly formed in the inner bottom surface of the lower mold 110. This application does not strictly limit this. This stepped groove gives the lower mold 110 excellent dimensional compatibility, so that after the die-leading parts 200 of different diameters are inserted, their bottom ends can automatically fall into and be fastened in the matching stepped holes according to their own dimensions.

[0047] Of course, this application does not exclude the possibility that the first limiting part 111 may adopt a cylindrical groove or other equivalent mechanical limiting structure to achieve the centering and fixing of the crystal pulling part 200.

[0048] For example, such as Figure 4 As shown, the second limiting part 131 can be a central hole opened in the center of the upper mold 130. This central hole and the stepped groove in the center of the inner bottom surface of the lower mold 110 are arranged coaxially in the longitudinal direction. Through the coordinated positioning of the upper and lower ends, the slender crystal-leading part 200 is forcibly constrained on the geometric central axis of the mold cavity, thereby ensuring the alignment accuracy of the crystal-leading part 200 in the subsequent curing process at the physical level and avoiding analytical deviations caused by sample tilting.

[0049] Regarding the construction of the top plate of the upper mold 130, this application provides several flexible solutions. One approach is that the top plate adopts an integral plate structure, with a central hole being a through hole located at the center of the plate, and openings communicating with the mold cavity around the central hole serving as the injection filling part 132; another approach is as follows... Figure 4 As shown, the top plate is composed of multiple symmetrically distributed support ribs 133. The central hole is connected to the outer edge of the upper mold 130 through these support ribs 133. The hollow area formed between the support ribs 133, the central hole and the outer edge directly serves as the injection part 132.

[0050] It should be noted that this application does not exclude the possibility that the second limiting part 131 and the filling part 132 may adopt other equivalent structural forms. As long as the relevant structure can meet the requirements of the penetration constraint at the end of the crystal-leading part 200 and the filling requirements of the mounting material, it should fall within the protection scope of this application.

[0051] Regarding specific structural parameters, the wall thickness of this mold is typically 1mm to 20mm, while its outer diameter or length and width dimensions are set between 10mm and 500mm depending on the actual sample preparation requirements. For example... Figure 2 As shown, the height of the lower mold 110 is H1, which is set between 10mm and 50mm; the length L1 and width W1 of the cross-section of the lower mold 110 are set between 10mm and 500mm respectively. The height of the stepped groove at the center of the inner bottom surface of the lower mold 110 is h1, which is set between 10mm and 20mm; in order to achieve compatibility with different specifications of the die-leading parts 200, the diameter D of the stepped groove (which may include multiple values ​​such as D1, D2, and D3 depending on the number of cylindrical holes) is set between 4mm and 8mm, and the diameters of adjacent steps differ by 1mm. Figure 3As shown, the height H2 of the intermediate mold 120, which serves as the core supporting the insert material, ranges from 20mm to 500mm, and the length L2 and width W2 of the cross-section of the intermediate mold 120 also range from 10mm to 500mm. Figure 4 As shown, the height of the matching upper mold 130 is H3, which ranges from 5mm to 50mm. The length L3 and width W3 of the cross-section of the upper mold 130 also range from 10mm to 500mm. The diameter D4 of the center hole of the upper mold 130 is kept within the range of 4mm to 8mm to ensure that the limiting parts at the upper and lower ends can achieve precise coaxial alignment after the mold is assembled.

[0052] Regarding material selection, the lower mold 110 and the middle mold 120, which need to directly contact and support the resin insert, are typically made of materials such as silicone or plastic. These materials possess good chemical stability, effectively resisting the effects of the resin curing process. Furthermore, their surface properties facilitate physical demolding after curing, helping to maintain the integrity of the cured insert edges. In contrast, the upper mold 130 primarily serves to center and position the upper end of the crystal-leading portion 200, rather than directly supporting a large area of ​​resin. Based on this functional difference, the upper mold 130 has a wider range of material options, including silicone, plastic, metal, or ceramic.

[0053] In some embodiments, the mounting material is a mixture of transparent resin and curing agent in a specific ratio. The resin can be selected from highly transparent materials such as epoxy resin, acrylic resin, or polyester resin, and there is no limitation on its type. The advantage of using transparent resin is that the prepared cured mounting has good light transmittance, allowing the operator to directly and clearly observe the crystal-leading portion 200 encased within the resin with the naked eye. This visual intuitiveness helps the operator more accurately locate the geometric center plane of the crystal-leading portion, thereby guiding the wire cutting equipment to achieve precise cutting and ensuring the accuracy of the analytical section. Simultaneously, these transparent resin materials also possess advantages such as low curing shrinkage, strong adhesion, and good abrasion resistance, providing excellent edge and corner protection for slender crystal-leading samples and ensuring that they do not suffer damage or detachment during subsequent grinding and polishing processes.

[0054] Example 2 Below, for reference Figure 5 This application describes a method for preparing a polished sample of the seed site according to an embodiment of the present application. For example... Figure 5 As shown, the preparation method uses the mold from Example 1 and includes the following steps: Step S11: Place the crystal-leading part 200 to be analyzed into the mold, so that one end of the crystal-leading part 200 is limited to the first limiting part 111 of the lower mold 110, and the other end passes through the second limiting part 131 of the upper mold 130, so that the main body of the crystal-leading part 200 is positioned in the mold cavity. Step S12: Insert material is injected into the mold cavity through the injection section 132 of the upper mold 130; Step S13: After the mounting material has solidified, demolding is performed to obtain a solidified mounting that encapsulates the crystal-leading portion 200. Step S14: The solidified inlay sample is cut using wire cutting to obtain a half-section sample of the inlay lead-in part; Step S15: Grinding and polishing are performed on the half-section sample of the embedded crystal-leading part in sequence to obtain the ground and polished sample of the crystal-leading part.

[0055] In this embodiment, the preparation method uses the first limiting part 111 of the lower mold 110 to limit one end of the crystal-drawing part 200, and allows the other end of the crystal-drawing part 200 to pass upward through the second limiting part 131 of the upper mold 130. Utilizing the coaxial arrangement of the first limiting part 111 and the second limiting part 131, the slender and fragile crystal-drawing part 200 is precisely positioned and vertically fixed within the mold cavity. Furthermore, the cured insert material completely covers it, providing stable support and protection for the crystal-drawing part 200, which has weak shear resistance. This effectively solves the problem of the crystal-drawing part 200 being prone to damage due to... The lack of surrounding protection, which makes the sample easily broken by impact or drop, significantly improves the integrity of the sample preparation and the yield rate. On this basis, the prepared solidified inlay provides a stable environment for subsequent processing, making it possible to smoothly carry out wire cutting, grinding, and polishing processes that were originally difficult to perform on the slender crystal-leading parts 200. Moreover, the ground and polished sample of the crystal-leading parts after wire cutting, grinding, and polishing has a high degree of surface flatness, which greatly facilitates the subsequent detailed observation and analysis of defects in the crystal-leading parts 200, and provides reliable technical support for accurately tracing the source of penetrating central defects in the single crystal growth process.

[0056] The preparation method described above will be introduced in more detail below.

[0057] First, step S11 is performed, in which the crystal-leading part 200 to be analyzed is placed in the mold, so that one end of the crystal-leading part 200 is limited to the first limiting part 111 of the lower mold 110, and the other end is inserted through the second limiting part 131 of the upper mold 130, so that the main body of the crystal-leading part 200 is positioned in the mold cavity.

[0058] The mold can be the same as the mold in Example 1, which can be referred to in the description in Example 1, and will not be repeated here.

[0059] In some embodiments, to ensure the reliability of the sample preparation process, a degreasing treatment is further included before placing the crystal-drawing portion 200 into the mold. By removing grease and adhering impurities from the surface of the crystal-drawing portion 200, its surface wettability can be significantly improved, thereby enhancing the interfacial adhesion between the crystal-drawing portion 200 and the mounting material.

[0060] Subsequently, considering that the lower mold 110, middle mold 120, and upper mold 130 adopt independent and detachable split structures, the lower mold 110, middle mold 120, and upper mold 130 are assembled into a complete mold cavity. During this process, the bottom of the crystal-drawing part 200 is limited by the first limiting part 111 of the lower mold 110, and its top end is inserted upward through the second limiting part 131 of the upper mold 130. By utilizing the coaxial arrangement of the first limiting part 111 and the second limiting part 131, the slender and fragile crystal-drawing part 200 can be accurately positioned and vertically fixed in the mold cavity, avoiding possible tilting or displacement of the crystal-drawing part 200 during the subsequent injection of insert material.

[0061] It is understood that the technical solution of this application does not exclude the possibility that the lower mold 110, the middle mold 120 and the upper mold 130 adopt a non-separate integrated structure.

[0062] Next, step S12 is performed, in which insert material is injected into the mold cavity through the injection section 132 of the upper mold 130.

[0063] In some embodiments, the mounting material is a mixture of transparent resin and curing agent in a specific ratio. The resin can be selected from highly transparent materials such as epoxy resin, acrylic resin, or polyester resin, and there is no limitation on its type. The advantage of using transparent resin is that the prepared cured mounting has good light transmittance, allowing the operator to directly and clearly observe the crystal-leading portion 200 encased within the resin with the naked eye. This visual intuitiveness helps the operator more accurately locate the geometric center plane of the crystal-leading portion, thereby guiding the wire cutting equipment to achieve precise cutting and ensuring the accuracy of the analytical section. Simultaneously, these transparent resin materials also possess advantages such as low curing shrinkage, strong adhesion, and good abrasion resistance, providing excellent edge and corner protection for slender crystal-leading samples and ensuring that they do not suffer damage or detachment during subsequent grinding and polishing processes.

[0064] In some embodiments, after the transparent resin material and the curing agent are mixed in proportion, they can be slowly stirred to effectively avoid artificially generating air bubbles; after the mixture is evenly mixed, the resulting insert material is injected into the mold cavity through the injection part 132 of the upper mold 130 to ensure that the material can fully fill and completely wrap the crystal-leading part 200.

[0065] Next, step S13 is performed. After the mounting material has solidified, demolding is performed to obtain a solidified mounting that encapsulates the crystal-leading portion 200.

[0066] The curing process can be flexibly set according to the actual material characteristics and process requirements. For example, the curing temperature can be controlled between room temperature and 50°C, and the curing time can be set between 10 min and 480 min.

[0067] Taking the lower mold 110, middle mold 120, and upper mold 130 as an example, which are independent and detachable split structures, the demolding process can be achieved by disassembling the components. First, the upper mold 130 is pulled upward along the axial direction of the crystal-leading part 200, so that it is separated from the top of the crystal-leading part 200; then, the lower mold 110 is separated from the middle mold 120, and the solidified insert is smoothly slid out of the hollow cylindrical cavity of the middle mold 120 by using a push rod or gravity. Due to the extremely high smoothness of the inner wall of the mold, the solidified insert can be smoothly separated from the inner circumferential surface of the mold, thereby ensuring that the surface of the obtained solidified insert is flat, without adhesion or damage, and the position of the inner crystal-leading part 200 is fixed, providing a stable reference for subsequent wire cutting, grinding, and polishing processes.

[0068] Of course, there are other suitable demolding methods, and no restrictions are imposed on them.

[0069] Next, step S14 is performed, in which the solidified inlay is cut using wire cutting to obtain a half-section of the inlay lead-in part.

[0070] In some embodiments, during the step of cutting the solidified insert using wire cutting, the cutting surface is arranged parallel to the geometric center plane of the crystal-leading portion 200, and the cutting surface has a preset offset distance relative to the geometric center plane. By making the cutting surface parallel to the geometric center plane of the crystal-leading portion 200, it is ensured that the temporary surface formed after cutting is highly consistent with the final target analysis surface in spatial orientation, thereby ensuring the uniformity of material removal in subsequent grinding and polishing processes, and effectively avoiding uneven thickness of the half-section of the insert crystal-leading portion or tilting of the analysis surface due to cutting deviation. At the same time, setting the preset offset distance is to leave the necessary processing allowance for subsequent grinding and polishing processes, thereby ensuring that the target analysis surface can be accurately and smoothly exposed in the end.

[0071] The preset offset spacing can be set according to actual conditions, for example, from 0.5mm to 1.5mm. Furthermore, during the cutting process, the cutting speed can be controlled within the range of 20m / s to 50m / s, and the cutting wire diameter used is selected between 0.4mm and 0.8mm. It should be noted that the specific cutting parameters mentioned above are only illustrative references and can be flexibly adjusted in actual operation according to the material properties of the crystal-driving part 200 and the sample preparation accuracy requirements. This application does not impose strict limitations on these parameters.

[0072] In some embodiments, during the wire cutting process of the solidified mount, single-sided or double-sided cutting methods can be selected according to actual analytical needs. For example... Figure 6 As shown, single-sided cutting refers to performing a single cut along a cutting surface on one side of the geometric center plane, using the geometric center plane of the seeding portion 200 as a reference, to obtain a half-section sample of the seeding portion with a certain thickness (i.e., Figure 6 The portion below the central cutting plane), this method is typically used in scenarios where a large half-section of the inlaid lead-agent region needs to be preserved; double-sided cutting uses the geometric center plane of the lead-agent region 200 as a reference, and performs two parallel cuts along the cutting planes on both sides of the geometric center plane, thereby obtaining a half-section of the inlaid lead-agent region with a certain thickness (i.e., the portion below the central cutting plane). Figure 6 (The portion between the two cutting surfaces). Whether using single-sided or double-sided cutting, the cutting surface must be parallel to the geometric center plane of the crystal-driving part 200, and the cutting surface must be strictly controlled to allow for the necessary grinding and polishing allowance.

[0073] It is worth noting that, given that the cross-sectional shapes of the lower mold 110, middle mold 120, and upper mold 130 are typically rectangular, the half-section sample of the inlaid lead-agent area obtained by wire cutting is specifically a square longitudinal section sample. If subsequent processes require adaptation to the common grinding and polishing processes for silicon wafers, this square longitudinal section sample can be further cut and processed into a circular shape.

[0074] Next, step S15 is performed to grind and polish the half-section sample of the embedded crystal-leading part in sequence to obtain the ground and polished sample of the crystal-leading part.

[0075] Specifically, the physical damage layer left on the surface of the half-section sample at the inlaid crystal guide area during the wire cutting process is first effectively removed by grinding, achieving preliminary surface leveling. Then, further polishing eliminates the fine scratches generated during grinding, resulting in an extremely high surface flatness and smoothness for the half-section sample at the inlaid crystal guide area, yielding a ground and polished sample of the crystal guide area. This grinding-then-polishing process ensures that the final ground and polished sample of the crystal guide area exposes a clear target analytical surface, providing ideal conditions for subsequent detailed observation and analysis of microscopic defects.

[0076] In some embodiments, during the grinding process, a 1000-1600 mesh grinding slurry can be used, and the grinding fluid flow rate can be set to 20 mL / min-100 mL / min, while the spindle speed can be controlled at 2500 rpm-4500 rpm to achieve a grinding rate of 50 µm / min-200 µm / min. It should be noted that the specific grinding parameters described above can be flexibly adjusted according to actual sample preparation needs, and this application does not impose strict limitations on them.

[0077] In some embodiments, during the polishing process, the polishing agent is silica containing alkaline substances and a small amount of organic matter, and the ratio of polishing slurry to pure water is set to 1:10 to 1:40. Simultaneously, by controlling the polishing speed at 15 rpm to 36 rpm, and using a polishing slurry flow rate of 15 mL / min to 80 mL / min and a water pressure of 1 kPa to 2 kPa, the surface of the semi-section sample at the embedded crystal-leading region is polished. It should be noted that the specific polishing parameters described above can be flexibly adjusted according to actual sample preparation needs, and this application does not impose strict limitations on them.

[0078] During the grinding and polishing process, this application strictly controls the surface flatness of the sample and uses total thickness variation (TTV) as the core evaluation index.

[0079] Please refer to the appendix for details. Figure 7 This figure illustrates the thickness variation at the measurement location of a half-section sample or a polished sample of the inlaid seed region (hereinafter collectively referred to as the sample). The TTV measurement reference is typically set to the back side of the sample (i.e., reference plane B, Ref. B). The maximum total thickness 'a' of the highest point on the sample surface relative to reference plane B, and the minimum total thickness 'b' of the lowest point on the sample surface relative to reference plane B are measured. By definition, the TTV value is the difference between the maximum total thickness 'a' and the minimum total thickness 'b'.

[0080] In some embodiments, after grinding, the TTV of the sample is controlled within 3µm. This pre-control of surface flatness provides a uniform mechanical stress distribution benchmark for subsequent polishing processes, effectively avoiding surface collapse or localized over-grinding caused by uneven cutting forces. Subsequently, during the polishing stage, the TTV of the sample is further controlled within 1µm, achieving extremely high surface flatness. This staged TTV precision control ensures that the final target analysis surface is entirely within an extremely narrow depth of focus, significantly improving the convenience of subsequent fine defect observation and analysis of the crystal-derived region 200. It also provides reliable technical support for accurately tracing the source of penetrating central defects during single crystal growth.

[0081] In addition, after polishing, the sample is rinsed with deionized water and dried with hot air at the crystal-driing site for subsequent testing and analysis.

[0082] This concludes the description of the key steps in the preparation method of the grinding and polishing sample of the seeding site in this application. The complete preparation method of the grinding and polishing sample of the seeding site may also include other steps, which will not be elaborated here. It is worth mentioning that the order of the above steps can be adjusted without conflict.

[0083] In summary, the method for preparing the grinding and polishing sample of the crystal-leading part according to the embodiments of this application limits one end of the crystal-leading part 200 by the first limiting part 111 of the lower mold 110, and allows the other end of the crystal-leading part 200 to pass upward through the second limiting part 131 of the upper mold 130. Utilizing the coaxial arrangement of the first limiting part 111 and the second limiting part 131, the slender and fragile crystal-leading part 200 is ensured to be accurately positioned and vertically fixed within the mold cavity. Furthermore, the insert material is added into the mold cavity by the filling part 132 to cover the crystal-leading part 200, providing stable support and protection for the crystal-leading part 200, which has weak shear resistance. This effectively solves the problem that the crystal-leading part 200 is easily broken by impact or drop due to the lack of surrounding protection, significantly improving the integrity of the sample preparation and the yield. On this basis, the prepared solidified inlay provides a stable environment for subsequent processing, making it possible to smoothly carry out wire cutting, grinding, and polishing processes that were originally difficult to perform on the slender crystal-leading part 200. Moreover, the ground and polished sample of the crystal-leading part after wire cutting, grinding, and polishing has a high degree of surface flatness, which greatly facilitates the subsequent fine observation and analysis of defects in the crystal-leading part 200, and provides reliable technical support for accurately tracing the source of penetrating central defects in the single crystal growth process.

[0084] Example 3 In one specific embodiment, the mold described in Example 1 above is used for sample preparation. The mold has a wall thickness of 5mm. The lower mold 110 has a height H1 of 30mm, and its inner bottom center stepped groove is formed by three cylindrical holes of different diameters, decreasing in size from top to bottom, stacked coaxially. The diameters D1, D2, and D3 of the three holes are 6mm, 5mm, and 4mm, respectively. The middle mold 120 has a height H2 of 300mm; the upper mold 130 has a height H3 of 10mm, and its central hole has a diameter D4 of 5mm.

[0085] At the start of sample preparation, the crystal-leading part 200 to be analyzed is placed in the mold, with one end confined in the stepped groove of the lower mold 110 and the other end passing through the central hole of the upper mold 130, thereby positioning the main body of the crystal-leading part 200 in the mold cavity.

[0086] Subsequently, a mixture of epoxy resin and curing agent, mixed in proportion, is injected into the mold cavity through the injection section 132 of the upper mold 130. After injection, it is cured at room temperature for 480 minutes.

[0087] After the inlay material has completely cured, demolding is performed to obtain a cured inlay containing the 200mm crystal-leading portion.

[0088] Next, the solidified inlay was cut using wire cutting to obtain a half-section of the inlaid crystal-leading area. During the cutting process, a single-sided cutting method was selected, with the cutting surface located 1 mm to one side of the geometric center plane of the crystal-leading area. The cutting feed rate was set to 40 mm / min, the cutting line speed to 50 m / s, and the cutting wire diameter to 0.4 mm.

[0089] After cutting, the obtained half-section sample of the embedded crystal guide region was first ground. A 1000-mesh abrasive was used, with a flow rate of 100 mL / min, a spindle speed of 4500 rpm, a grinding depth of 200 μm / min, and a total transmissibility (TTV) controlled to be no more than 2 micrometers. After grinding, the half-section sample of the embedded crystal guide region was further polished to obtain a polished sample. The polishing agent used was silica containing alkaline substances and a small amount of organic matter, with a polishing fluid to pure water ratio of 1:10. The polishing process parameters were controlled as follows: spindle speed 25 rpm, polishing fluid flow rate 15 mL / min, water pressure 1 kPa, ultimately ensuring that the TTV of the sample did not exceed 1 micrometer.

[0090] After polishing, the polished sample at the crystal-leading part is rinsed with deionized water and dried with hot air before being ready for subsequent testing and analysis.

[0091] For more details on the sample preparation process, please refer to the description in Example 2, which will not be repeated here.

[0092] Example 4 In another specific embodiment, the mold described in Example 1 above is used for sample preparation. The mold has a wall thickness of 1 mm. The lower mold 110 has a height H1 of 10 mm, and its inner bottom center stepped groove is formed by three cylindrical holes of different diameters, decreasing in size from top to bottom, stacked coaxially. The diameters D1, D2, and D3 of the three holes are 6 mm, 5 mm, and 4 mm, respectively. The middle mold 120 has a height H2 of 400 mm; the upper mold 130 has a height H3 of 10 mm, and its central hole has a diameter D4 of 5 mm.

[0093] At the start of sample preparation, the crystal-leading part 200 to be analyzed is placed in the mold, with one end confined in the stepped groove of the lower mold 110 and the other end passing through the central hole of the upper mold 130, thereby positioning the main body of the crystal-leading part 200 in the mold cavity.

[0094] Subsequently, a mixture of acrylic resin and curing agent, mixed in proportion, is injected into the mold cavity through the injection section 132 of the upper mold 130. After injection, it is cured at room temperature for 20 minutes.

[0095] After the inlay material has completely cured, demolding is performed to obtain a cured inlay containing the 200mm crystal-leading portion.

[0096] Next, the solidified inlay was cut using wire cutting to obtain a half-section of the inlaid crystal-leading area. During the cutting process, a double-sided cutting method was selected, with the cutting surfaces located 1.5 mm to both sides of the 200 geometric center plane of the crystal-leading area. The cutting feed rate was set to 40 mm / min, the cutting line speed to 50 m / s, and the cutting wire diameter to 0.4 mm.

[0097] After cutting, the resulting half-section sample of the embedded crystal guide region was first ground. A 1400-mesh abrasive was used, with a flow rate of 50 mL / min, a spindle speed of 3300 rpm, a grinding depth of 100 μm / min, and a total transmissibility (TTV) controlled to be no more than 3 micrometers. After grinding, the half-section sample of the embedded crystal guide region was further polished to obtain a polished sample. The polishing agent used was silica containing alkaline substances and a small amount of organic matter, with a polishing fluid to pure water ratio of 1:20. The polishing process parameters were controlled as follows: spindle speed 15 rpm, polishing fluid flow rate 50 mL / min, water pressure 1.5 kPa, ultimately ensuring that the TTV of the sample did not exceed 1 micrometer.

[0098] After polishing, the polished sample at the crystal-leading part is rinsed with deionized water and dried with hot air before being ready for subsequent testing and analysis.

[0099] For more details on the sample preparation process, please refer to the description in Example 2, which will not be repeated here.

[0100] Example 5 In another specific embodiment, the mold described in Example 1 above is used for sample preparation. The mold has a wall thickness of 20mm. The lower mold 110 has a height H1 of 50mm, and its inner bottom center stepped groove is formed by three cylindrical holes of different diameters, decreasing in size from top to bottom, stacked coaxially. The diameters D1, D2, and D3 of the three holes are 8mm, 7mm, and 6mm, respectively. The middle mold 120 has a height H2 of 500mm; the upper mold 130 has a height H3 of 10mm, and its central hole has a diameter D4 of 7mm.

[0101] At the start of sample preparation, the crystal-leading part 200 to be analyzed is placed in the mold, with one end confined in the stepped groove of the lower mold 110 and the other end passing through the central hole of the upper mold 130, thereby positioning the main body of the crystal-leading part 200 in the mold cavity.

[0102] Subsequently, a mixture of acrylic resin and curing agent, mixed in proportion, is injected into the mold cavity through the injection section 132 of the upper mold 130. After injection, it is cured at room temperature for 10 minutes.

[0103] Next, the solidified inlay was cut using wire cutting to obtain a half-section of the inlaid crystal-leading area. During the cutting process, a double-sided cutting method was selected, with the cutting surfaces located 1.5 mm to both sides of the 200 geometric center plane of the crystal-leading area. The cutting feed rate was set to 10 mm / min, the cutting line speed to 30 m / s, and the cutting wire diameter to 0.6 mm.

[0104] After cutting, the obtained half-section sample of the embedded crystal guide region was first ground. A 1600-mesh abrasive was used, with a flow rate of 20 mL / min, a spindle speed of 2500 rpm, a grinding depth of 50 μm / min, and a total transmissibility (TTV) controlled to not exceed 2 micrometers. After grinding, the half-section sample of the embedded crystal guide region was further polished to obtain a polished sample. The polishing agent used was silica containing alkaline substances and a small amount of organic matter, with a polishing fluid to pure water ratio of 1:40. The polishing process parameters were controlled as follows: spindle speed 36 rpm, polishing fluid flow rate 80 mL / min, water pressure 2 kPa, ultimately ensuring that the TTV of the sample did not exceed 1 micrometer.

[0105] After polishing, the polished sample at the crystal-leading part is rinsed with deionized water and dried with hot air before being ready for subsequent testing and analysis.

[0106] For more details on the sample preparation process, please refer to the description in Example 2, which will not be repeated here.

[0107] Example 6 The table below summarizes the TTV data of the polished samples of the seed crystal region prepared in Examples 3, 4, 5, and the background technique. According to the experimental data, the TTV of the polished samples of the seed crystal region prepared in Examples 3, 4, and 5 are 0.85µm, 0.80µm, and 0.95µm, respectively, all controlled within 1µm; while the sample prepared using the background technique has a TTV as high as 6.2µm. The experimental data clearly demonstrate that the mold and preparation method of this application can obtain polished samples of the seed crystal region with better surface flatness. This not only significantly improves the convenience of subsequent fine defect observation and analysis of the seed crystal region 200, but also provides reliable technical support for accurately tracing the source of penetrating central defects during single crystal growth.

[0108] .

[0109] Although exemplary embodiments have been described herein with reference to the accompanying drawings, it should be understood that the above exemplary embodiments are merely illustrative and are not intended to limit the scope of this application. Various changes and modifications can be made therein by those skilled in the art without departing from the scope and spirit of this application. All such changes and modifications are intended to be included within the scope of this application as claimed in the appended claims.

[0110] Similarly, it should be understood that, in order to simplify this application and aid in understanding one or more aspects of the application, various features of this application may sometimes be grouped together in a single embodiment, figure, or description thereof in the description of exemplary embodiments of this application. However, this approach should not be construed as reflecting an intention that the claimed application requires more features than are expressly recited in each claim. Rather, as reflected in the corresponding claims, the point of application is that the corresponding technical problem can be solved with fewer features than all of a single disclosed embodiment. Therefore, the claims following the detailed description are hereby expressly incorporated into that detailed description, wherein each claim itself is a separate embodiment of this application.

[0111] Furthermore, those skilled in the art will understand that although some embodiments described herein include certain features but not others included in other embodiments, combinations of features from different embodiments are intended to be within the scope of this application and form different embodiments. For example, in the claims, any one of the claimed embodiments can be used in any combination.

[0112] It should be noted that the above embodiments are illustrative of this application and not limiting of it, and that those skilled in the art can devise alternative embodiments without departing from the scope of the appended claims. In the claims, any reference signs placed between parentheses should not be construed as limiting the claims. The use of the words first, second, and third, etc., does not indicate any order. These words can be interpreted as names.

Claims

1. A mold for preparing a sample for grinding and polishing the crystal-driving site, characterized in that, It includes a lower mold, a middle mold, and an upper mold, wherein the middle mold is configured to be disposed between the lower mold and the upper mold, and the middle mold, the lower mold, and the upper mold together form a mold cavity; The inner bottom surface of the lower mold is provided with a first limiting part for limiting one end of the crystal-drawing part, and the upper mold is provided with a second limiting part for the other end of the crystal-drawing part to pass through; the first limiting part and the second limiting part are opposite to each other and arranged coaxially, so that the main body of the crystal-drawing part is positioned in the mold cavity. The upper mold is also provided with an injection section that communicates with the mold cavity, for injecting insert material into the mold cavity.

2. The mold as described in claim 1, characterized in that, The first limiting part is a stepped groove located at the center of the bottom surface of the lower mold, and the second limiting part is a central hole located at the center of the upper mold.

3. The mold as described in claim 1, characterized in that, The second limiting part is connected to the outer edge of the upper mold by a plurality of symmetrically distributed support ribs, and the filling part is a hollow area formed by the support ribs, the second limiting part and the outer edge.

4. The mold as described in claim 1, characterized in that, The lower mold is a container-shaped base structure with an upwardly extending first peripheral wall, the upper mold is a container-shaped lid structure with a downwardly extending second peripheral wall, and the middle mold is a hollow cylindrical structure with openings at both ends. One end of the middle mold is fitted into the inner peripheral surface of the first peripheral wall, and the other end of the middle mold is fitted into the inner peripheral surface of the second peripheral wall. The outer contour dimensions of the cross-sections at both ends of the middle mold are respectively adapted to the dimensions of the first peripheral wall and the second peripheral wall.

5. The mold as described in claim 1, characterized in that, The lower mold, the middle mold, and the upper mold have mutually compatible cross-sectional shapes, and the cross-sectional shapes are selected from one of circles, squares, or other symmetrical polygons.

6. The mold as described in claim 1, characterized in that, The lower mold, the middle mold, and the upper mold adopt a separate structure that is independent and detachable.

7. A method for preparing a polished sample of the crystal-driving site, characterized in that, The method of using the mold as described in any one of claims 1 to 6 includes the following steps: The crystal-drawing part to be analyzed is placed in the mold, with one end of the crystal-drawing part limited to the first limiting part of the lower mold and the other end passing through the second limiting part of the upper mold, so that the main body of the crystal-drawing part is positioned in the mold cavity. Insert material is injected into the mold cavity through the injection section of the upper mold; After the inlay material has solidified, a demolding process is performed to obtain a solidified inlay that encapsulates the crystal-leading portion; The solidified inlay sample is cut using wire cutting to obtain a half-section sample of the inlay lead-in portion; The half-section sample of the embedded crystal-leading part is subjected to grinding and polishing processes in sequence to obtain a ground and polished sample of the crystal-leading part.

8. The preparation method according to claim 7, characterized in that, The mounting material comprises a mixture of transparent resin material and curing agent.

9. The preparation method according to claim 7, characterized in that, In the step of cutting the solidified inlay using wire cutting, the cutting surface is arranged parallel to the geometric center plane of the crystal-leading part, and the cutting surface has a preset offset distance relative to the geometric center plane.

10. The preparation method according to claim 7 or 9, characterized in that, The wire cutting method is either single-sided cutting or double-sided cutting.

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