A method, apparatus, equipment and medium for diagnosing multi-stage overcurrent faults

Abstract

This invention discloses a multi-level overcurrent fault diagnosis method, apparatus, device, and medium. The method acquires the current ambient temperature and actual current of a field-effect transistor (FET) during operation. Based on these data, and using a preset drain-source voltage threshold configuration table, the FET's drain-source voltage threshold is adjusted to the corresponding level. When the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold level, an overcurrent fault is diagnosed, and an overcurrent protection mechanism is triggered. This multi-level overcurrent fault diagnosis method uses a thermistor to detect temperature and then adjusts the drain-source voltage threshold across multiple levels. This ensures a close fit between the overcurrent threshold curve and the actual current curve across the entire temperature range, resulting in good diagnostic sensitivity and overcurrent protection performance.

Description

Technical Field

[0001] This invention belongs to the field of power electronics technology, and in particular relates to a method, device, equipment and medium for diagnosing multi-stage overcurrent faults. Background Technology

[0002] As autonomous driving functions and levels continue to improve, the number and requirements of vehicle motor loads are also constantly increasing. The motor load is controlled by the bridge drive module circuit, whose most important function is overcurrent protection. Overcurrent protection is primarily achieved through VDS error reporting of the Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) (i.e., an error occurs when the potential difference between the MOSFET drain and source exceeds a set VDS threshold). VDS refers to the voltage between the MOSFET drain and source. VDS protection not only provides overcurrent protection but also diagnostic functions. In the automotive industry, diagnostics is defined as identifying and distinguishing abnormal faults from the controller to the load end based on feedback voltage and other data. When a VDS error occurs when the upper MOSFET of the bridge drive module circuit is turned on, a short circuit to ground (Short to GND, SCG) occurs at the load end. When a VDS error occurs when the lower MOSFET of the bridge drive module circuit is turned on, a short circuit to the power supply (Short to Battery, SCB) occurs at the load end. When an abnormality occurs at the motor load end, the bridge drive module circuit needs to detect it promptly and report the abnormality to the user so that the user can respond in a timely manner. Therefore, VDS error reporting can realize overcurrent protection and related diagnostic functions.

[0003] However, the current problem is that VDS only has one setting across the entire temperature range, which results in the actual current curve in the entire temperature range not closely matching the overcurrent threshold curve corresponding to VDS. In other words, the current protection blind zone is large and the overcurrent protection performance is poor. Summary of the Invention

[0004] The purpose of this invention is to provide a multi-level overcurrent fault diagnosis method, device, equipment, and medium. By detecting the temperature with a thermistor, the leakage source voltage threshold of the multi-level device is adjusted, which solves the technical problems of large current protection blind zone and poor overcurrent protection performance in the prior art.

[0005] To solve the above-mentioned technical problems, the present invention is achieved through the following technical solution:

[0006] This invention provides a multi-stage overcurrent fault diagnosis method, comprising:

[0007] Obtain the current ambient temperature and actual current of the field-effect transistor during operation;

[0008] Based on the current ambient temperature and actual current, the drain-source voltage threshold of the field-effect transistor is adjusted to the corresponding drain-source voltage threshold level using a preset drain-source voltage threshold configuration table. The preset drain-source voltage threshold configuration table includes multiple drain-source voltage threshold levels, and each drain-source voltage threshold level corresponds to a different overcurrent threshold.

[0009] When the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold setting, it is diagnosed as an overcurrent fault and the overcurrent protection mechanism is triggered.

[0010] In one embodiment of the present invention, obtaining the current ambient temperature and actual current of the field-effect transistor during operation includes:

[0011] The current ambient temperature of the field-effect transistor during operation is obtained using a thermistor;

[0012] The actual current of the field-effect transistor during operation is obtained using a current sensor.

[0013] In one embodiment of the present invention, the preset drain-source voltage threshold configuration table is obtained in the following manner:

[0014] Obtain the current characteristic curve of the field-effect transistor operating in the full temperature range, and determine the current slope type corresponding to the field-effect transistor based on the current characteristic curve. The current slope type includes a first type of current slope, a second type of current slope, and a third type of current slope, which are divided in order of increasing current slope.

[0015] The full temperature range is divided into multiple temperature regions, and the drain-source voltage threshold levels of the field-effect transistor are configured in different temperature regions according to the current slope type corresponding to the field-effect transistor, so as to obtain the preset drain-source voltage threshold configuration table.

[0016] In one embodiment of the present invention, the drain-source voltage threshold settings of the field-effect transistors corresponding to different current slope types are configured differently in the same temperature region in the preset drain-source voltage threshold configuration table.

[0017] In one embodiment of the present invention, under the same current slope type in the preset drain-source voltage threshold configuration table, the drain-source voltage threshold settings of the field-effect transistors corresponding to different temperature regions are different.

[0018] In one embodiment of the present invention, as the temperature region increases, in the preset drain-source threshold voltage configuration table, the source-drain voltage threshold level of the field-effect transistor corresponding to the first type of current slope in the high temperature region is greater than or equal to the drain-source voltage threshold level in the low temperature region, and the source-drain voltage threshold level of the field-effect transistor corresponding to the second type of current slope and the third type of current slope in the high temperature region is less than or equal to the drain-source voltage threshold level in the low temperature region.

[0019] In one embodiment of the present invention, adjusting the drain-source voltage threshold of the field-effect transistor to the corresponding drain-source voltage threshold level based on the current ambient temperature and actual current using a preset drain-source voltage threshold configuration table includes:

[0020] Based on the temperature range of the current ambient temperature and the current slope of the actual current, the drain-source voltage threshold of the field-effect transistor is adjusted to the corresponding drain-source voltage threshold level using a preset drain-source voltage threshold configuration table.

[0021] Based on the same inventive concept, another embodiment of the present invention also provides a multi-stage overcurrent fault diagnosis device, comprising:

[0022] The data acquisition module is used to acquire the current ambient temperature and actual current of the field-effect transistor during operation.

[0023] The gear adjustment module is used to adjust the drain-source voltage threshold of the field-effect transistor to the corresponding drain-source voltage threshold gear according to the current ambient temperature and actual current, using a preset drain-source voltage threshold configuration table. The preset drain-source voltage threshold configuration table includes multiple drain-source voltage threshold gears, and each drain-source voltage threshold gear corresponds to a different overcurrent threshold.

[0024] The fault diagnosis module is used to diagnose an overcurrent state and trigger an overcurrent protection mechanism when the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold setting.

[0025] Based on the same inventive concept, another embodiment of the present invention also provides an electronic device, the electronic device comprising:

[0026] One or more processors;

[0027] A storage device for storing one or more programs, which, when executed by one or more processors, cause the electronic device to implement the multi-level overcurrent fault diagnosis method as described in any of the above embodiments.

[0028] Based on the same inventive concept, another embodiment of the present invention provides a computer-readable storage medium having a computer program stored thereon, which, when executed by a computer processor, causes the computer to perform the multi-level overcurrent fault diagnosis method described in any of the above embodiments.

[0029] As described above, the multi-level overcurrent fault diagnosis method provided by this invention obtains the current ambient temperature and actual current of the field-effect transistor (FET) during operation. Based on the current ambient temperature and actual current, and using a preset drain-source voltage threshold configuration table, the drain-source voltage threshold of the FET is adjusted to the corresponding drain-source voltage threshold level. The preset drain-source voltage threshold configuration table includes multiple drain-source voltage threshold levels, each corresponding to a different overcurrent threshold. When the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold level, an overcurrent fault is diagnosed, and an overcurrent protection mechanism is triggered. This multi-level overcurrent fault diagnosis method uses a thermistor to detect temperature and then adjusts the drain-source voltage threshold across multiple levels to achieve a close fit between the overcurrent threshold curve and the actual current curve across the entire temperature range, thereby achieving good diagnostic sensitivity and overcurrent protection performance. Of course, any product implementing this invention does not necessarily need to simultaneously achieve all the advantages described above. Attached Figure Description

[0030] To more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0031] Figure 1 This is a flowchart illustrating a multi-stage overcurrent fault diagnosis method provided for an exemplary embodiment of this application.

[0032] Figure 2 This is a schematic diagram of the overcurrent threshold and actual current versus temperature curves corresponding to the slope of a single-stage first type current, provided as an exemplary embodiment of this application.

[0033] Figure 3 A graph showing the overcurrent threshold and actual current versus temperature corresponding to a single-stage second-type current slope provided for an exemplary embodiment of this application.

[0034] Figure 4 A graph showing the overcurrent threshold and actual current versus temperature corresponding to a single-stage third-type current slope provided for an exemplary embodiment of this application.

[0035] Figure 5A graph showing the overcurrent threshold and actual current versus temperature corresponding to the slope of the first type of current with multiple settings, provided as an exemplary embodiment of this application.

[0036] Figure 6 A graph showing the overcurrent threshold and actual current versus temperature corresponding to the slope of the multi-level second type of current provided in an exemplary embodiment of this application.

[0037] Figure 7 A graph showing the overcurrent threshold and actual current versus temperature corresponding to the slope of the multi-level third type current provided in an exemplary embodiment of this application.

[0038] Figure 8 A graph showing the overcurrent threshold and actual current versus temperature corresponding to the slope of the first type of current with multiple settings, provided as another exemplary embodiment of this application.

[0039] Figure 9 A graph showing the overcurrent threshold and actual current versus temperature corresponding to the slope of the multi-level second type of current provided as another exemplary embodiment of this application.

[0040] Figure 10 A graph showing the overcurrent threshold and actual current versus temperature corresponding to the slope of the multi-level third type current provided as another exemplary embodiment of this application.

[0041] Figure 11 This is a schematic diagram of the structure of a multi-stage overcurrent fault diagnosis device provided for another exemplary embodiment of this application.

[0042] Figure 12 This is a schematic diagram of the structure of an electronic device provided for another exemplary embodiment of this application. Detailed Implementation

[0043] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that, unless otherwise specified, the following embodiments and features described therein can be combined with each other.

[0044] It should be noted that the illustrations provided in the following embodiments are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0045] In the following description, numerous details are explored to provide a more thorough explanation of embodiments of the invention. However, it will be apparent to those skilled in the art that embodiments of the invention may be practiced without these specific details. In other embodiments, well-known structures and devices are shown in block diagram form rather than in detail to avoid obscuring embodiments of the invention.

[0046] To address the technical problems of large current protection blind spots and poor overcurrent protection performance in existing technologies, this invention provides a multi-level overcurrent fault diagnosis method. This method adjusts the drain-source voltage threshold across multiple levels by detecting temperature using a thermistor, achieving a close fit between the overcurrent threshold curve and the actual current curve across the entire temperature range. This results in excellent diagnostic sensitivity and overcurrent protection performance. Please refer to [link to relevant documentation]. Figure 1 As shown, the multi-stage overcurrent fault diagnosis method includes the following steps:

[0047] S100: Obtain the current ambient temperature and actual current of the field-effect transistor during operation;

[0048] S200: Based on the current ambient temperature and actual current, the drain-source voltage threshold of the field-effect transistor is adjusted to the corresponding drain-source voltage threshold level using a preset drain-source voltage threshold configuration table. The preset drain-source voltage threshold configuration table includes multiple drain-source voltage threshold levels, and each drain-source voltage threshold level corresponds to a different overcurrent threshold.

[0049] S300: When the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold setting, it is diagnosed as an overcurrent fault and the overcurrent protection mechanism is triggered.

[0050] It should be noted that the drain-source voltage threshold is the same as the VDS threshold, and the drain-source voltage threshold level is the VDS threshold corresponding to different conditions.

[0051] The steps of the above-mentioned multi-stage overcurrent fault diagnosis method will be discussed in detail below.

[0052] It should be noted that before executing step S100, the preset drain-source voltage threshold configuration table needs to be established. The preset drain-source voltage threshold configuration table is obtained in the following way:

[0053] Obtain the current characteristic curve of the field-effect transistor operating in the full temperature range, and determine the current slope type corresponding to the field-effect transistor based on the current characteristic curve. The current slope type includes a first type of current slope, a second type of current slope, and a third type of current slope, which are divided in order of increasing current slope.

[0054] The full temperature range is divided into multiple temperature regions, and the drain-source voltage threshold levels of the field-effect transistor are configured in different temperature regions according to the current slope type corresponding to the field-effect transistor, so as to obtain the preset drain-source voltage threshold configuration table.

[0055] Specifically, the model and specifications of the field-effect transistor (FET) are determined, and a circuit capable of measuring the current characteristics of the FET at different temperatures is constructed. The operating environment temperature of the FET is changed using a temperature control device. A constant gate voltage is applied to the FET to ensure it is in the on-state. Then, the actual current of the FET is measured at each temperature point across the entire temperature range, thereby obtaining the current characteristic curve of the FET operating across the entire temperature range. In this embodiment, the entire temperature range covers the range from the low temperature limit to the high temperature limit, i.e., -40℃ to 125℃. Of course, in other embodiments, the specific temperature range is determined according to actual needs and the FET specifications. The collected data is plotted into a current characteristic curve using data visualization tools, which shows the change of the actual current of the FET at different temperatures. The current slope type of the field-effect transistor (FET) is determined based on the current characteristic curve. In this embodiment, the current slope type includes a first type, a second type, and a third type, classified in ascending order of current slope. The first type is a small current slope (less than or equal to 0.05), the second type is a moderate current slope (greater than 0.05 but less than 0.15), and the third type is a large current slope (greater than or equal to 0.15). It is worth noting that in other embodiments, the specific criteria for classifying the current slope type can be adaptively adjusted according to actual needs. The magnitude of the current slope reflects how quickly the actual current of the FET changes with temperature. When the current changes rapidly with a small slope, the maximum actual current of the FET may be relatively high because a small current slope usually means a relatively gradual load change, resulting in less heat generation inside the FET, thus allowing it to withstand higher currents without overheating. When the current changes rapidly with a large slope, the internal temperature of the FET rises more quickly, increasing the risk of damage to the FET. Please refer to Table 1, which shows the actual maximum current values ​​for three different current slope types. The current slope types are divided into three types based on the magnitude of the current slope: Type I current slope, Type II current slope, and Type III current slope.

[0056] Table 1

[0057]

[0058] Traditional single-level VDS threshold diagnostic designs only have one VDS threshold setting, for example, a VDS threshold set to 0.15V. (See [link to relevant documentation]). Figures 2 to 4 As shown, Figure 2 The diagram shows the curves of the overcurrent threshold and the actual current versus temperature corresponding to the slope of the first type of current. The average difference between the overcurrent threshold min and the actual current is 10.57A, with a maximum difference of 17.08A. Figure 3 The graphs showing the overcurrent threshold and actual current versus temperature corresponding to the second type of current slope are shown. The average difference between the overcurrent threshold min and the actual current is 12.07A, with the largest difference being 12.35A. Figure 4 The graph shows the overcurrent threshold and actual current versus temperature curves corresponding to the third type of current slope. The average difference between the overcurrent threshold min and the actual current is 12.44A, with a maximum difference of 15.28A. This indicates that a single VDS threshold can only achieve a difference of 12A between the overcurrent threshold and the actual current value, meaning that the actual current curve and the overcurrent threshold curve corresponding to the VDS threshold do not closely match across the entire temperature range.

[0059] In an exemplary embodiment of this application, a multi-level VDS threshold diagnostic design is adopted. The VDS threshold is set with multiple levels, dividing the entire temperature range into multiple continuous temperature regions. Specifically, the temperature range of -40℃ to 125℃ is divided into four temperature regions: -40℃ to -10℃, -10℃ to 55℃, 55℃ to 105℃, and 105℃ to 125℃. Of course, in other embodiments, the temperature range can be divided into different numbers of temperature regions according to actual needs. Based on the current slope type corresponding to the field-effect transistor, a separate VDS configuration is performed in each temperature region to obtain the preset drain-source voltage threshold configuration table. In the preset drain-source voltage threshold configuration table, the drain-source voltage threshold level configurations of the field-effect transistors corresponding to different current slope types are different within the same temperature region. It should be noted that the preset drain-source voltage threshold configuration table may also contain the same drain-source voltage threshold level configuration. Furthermore, in the preset drain-source threshold voltage configuration table, the source-drain voltage threshold level of the field-effect transistor corresponding to the first type of current slope in the high-temperature region is greater than or equal to the drain-source voltage threshold level in the low-temperature region, and the source-drain voltage threshold levels of the field-effect transistors corresponding to the second type of current slope and the third type of current slope in the high-temperature region are less than or equal to the drain-source voltage threshold levels in the low-temperature region.

[0060] It should be noted that the on-resistance of the field-effect transistor increases with increasing temperature. Therefore, the effect of temperature variation on the on-resistance needs to be considered when determining the VDS threshold level. Based on the on-resistance value of the field-effect transistor and the required overcurrent threshold min, a suitable VDS threshold level is set by configuring the relevant registers.

[0061] In an exemplary embodiment of this application, the preset drain-source voltage threshold configuration table is shown in Table 2, and the step size configuration is 0.05V.

[0062] Table 2

[0063]

[0064]

[0065] Please see Figures 5 to 7 As shown, Figure 5 The graphs showing the overcurrent threshold and actual current versus temperature corresponding to the slope of the first type of current are shown. The average difference between the overcurrent threshold min and the actual current is 7.6A, with a maximum difference of 14.65A. Figure 6 The graphs showing the overcurrent threshold and actual current versus temperature corresponding to the second type of current slope are shown. The average difference between the overcurrent threshold min and the actual current is 7.91A, with a maximum difference of 12.35A. Figure 7 The graphs showing the overcurrent threshold and actual current versus temperature corresponding to the third type of current slope are presented. The average difference between the overcurrent threshold min and the actual current is 8.28A, with a maximum difference of 12.73A. This demonstrates that the multi-level VDS threshold diagnostic design results in a closer fit between the actual current curve and the overcurrent threshold curve corresponding to the VDS threshold across the entire temperature range.

[0066] In another exemplary embodiment of this application, the preset drain-source voltage threshold configuration table is shown in Table 3, and the step of the gear configuration is 0.025V.

[0067] Table 3

[0068]

[0069] Please see Figures 8 to 10 As shown, Figure 8 The graphs showing the overcurrent threshold and actual current versus temperature corresponding to the slope of the first type of current are shown. The average difference between the overcurrent threshold min and the actual current is 3.83A, with a maximum difference of 7.85A. Figure 9 The graphs showing the overcurrent threshold and actual current versus temperature corresponding to the second type of current slope are shown. The average difference between the overcurrent threshold min and the actual current is 4.25A, with a maximum difference of 6.35A. Figure 10The graphs showing the overcurrent threshold and actual current versus temperature corresponding to the third type of current slope are presented. The average difference between the overcurrent threshold min and the actual current is 4.12A, with a maximum difference of 7.19A. This demonstrates that the refined multi-level VDS threshold diagnostic design results in a closer fit between the actual current curve and the overcurrent threshold curve corresponding to the VDS threshold across the entire temperature range.

[0070] For a comparison of the multi-level VDS threshold diagnostic design with the single-level VDS threshold diagnostic design, please refer to Table 4.

[0071] Table 4

[0072]

[0073]

[0074] The multi-level VDS threshold diagnostic design with a step size of 0.05V improves the average current difference by 32.18% and the maximum current difference by 11.14% compared to the traditional single VDS threshold diagnostic design. The refined multi-level VDS threshold diagnostic design with a step size of 0.025V improves the average current difference by 65.22% and the maximum current difference by 52.16%. The refined multi-level VDS threshold diagnostic design with a step size of 0.025V improves the average current difference by 48.72% and the maximum current difference by 46.16% compared to the multi-level VDS threshold diagnostic design with a step size of 0.05V. It is worth noting that in other embodiments, the VDS threshold levels can be further refined, for example, with step sizes of 0.0125V, 0.00625V, etc.

[0075] After the preset drain-source voltage threshold configuration table is established, step S100 is executed, which is to obtain the current ambient temperature and actual current of the field-effect transistor during operation.

[0076] In an exemplary embodiment of this application, step S100, obtaining the current ambient temperature and actual current of the field-effect transistor during operation, further includes the following steps:

[0077] S110: Use a thermistor to obtain the current ambient temperature of the field-effect transistor during operation;

[0078] S120: Use a current sensor to obtain the actual current of the field-effect transistor during operation.

[0079] It should be noted that in this embodiment, a thermistor is used to obtain the current operating ambient temperature of the field-effect transistor. Of course, in other embodiments, temperature acquisition devices such as diodes can also be used to obtain the current operating ambient temperature of the field-effect transistor.

[0080] Next, step S200 is executed, which is to adjust the drain-source voltage threshold of the field-effect transistor to the corresponding drain-source voltage threshold level according to the current ambient temperature and actual current using a preset drain-source voltage threshold configuration table. The preset drain-source voltage threshold configuration table includes multiple drain-source voltage threshold levels, and each drain-source voltage threshold level corresponds to a different overcurrent threshold.

[0081] In an exemplary embodiment of this application, the drain-source voltage threshold of the field-effect transistor is adjusted to the corresponding drain-source voltage threshold level based on the temperature range to which the current ambient temperature belongs and the current slope of the actual current, using a preset drain-source voltage threshold configuration table.

[0082] Specifically, in the preset drain-source voltage threshold configuration table, the corresponding temperature range is found based on the current ambient temperature. Within the found temperature range, a matching current slope type is found based on the actual current slope. Then, based on the matching temperature range and current slope type, the corresponding drain-source voltage threshold level is located in the preset drain-source voltage threshold configuration table. The drain-source voltage threshold of the field-effect transistor is adjusted according to the determined drain-source voltage threshold level.

[0083] Finally, step 300 is executed, that is, when the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold setting, an overcurrent fault is diagnosed and the overcurrent protection mechanism is triggered.

[0084] It should be noted that once an overcurrent is diagnosed, the overcurrent protection mechanism is immediately activated. The overcurrent protection mechanism includes multiple measures such as cutting off the power supply, adjusting operating parameters, and issuing alarms to prevent the field-effect transistor from being damaged by overcurrent, while ensuring the overall safety and stability of the system.

[0085] In summary, this invention provides a multi-level overcurrent fault diagnosis method. By acquiring the current ambient temperature and actual current of the field-effect transistor (FET) during operation, and based on these parameters, using a preset drain-source voltage threshold configuration table, the FET's drain-source voltage threshold is adjusted to the corresponding level. This preset table includes multiple drain-source voltage threshold levels, each corresponding to a different overcurrent threshold. When the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold level, an overcurrent fault is diagnosed, and an overcurrent protection mechanism is triggered. This multi-level overcurrent fault diagnosis method uses a thermistor to detect temperature and then adjusts the drain-source voltage threshold across multiple levels, achieving a close fit between the overcurrent threshold curve and the actual current curve across the entire temperature range, thus achieving good diagnostic sensitivity and overcurrent protection performance.

[0086] Based on the same inventive concept, please refer to Figure 11 As shown, the present invention also provides a multi-stage overcurrent fault diagnosis device 11, the device comprising:

[0087] The data acquisition module 111 is used to acquire the current ambient temperature and actual current of the field-effect transistor during operation;

[0088] The gear adjustment module 112 is used to adjust the drain-source voltage threshold of the field-effect transistor to the corresponding drain-source voltage threshold gear according to the current ambient temperature and actual current and using a preset drain-source voltage threshold configuration table. The preset drain-source voltage threshold configuration table includes multiple drain-source voltage threshold gears, and each drain-source voltage threshold gear corresponds to a different overcurrent threshold.

[0089] The fault diagnosis module 113 is used to diagnose an overcurrent state and trigger an overcurrent protection mechanism when the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold setting.

[0090] Based on the same inventive concept, please refer to Figure 12 As shown, another embodiment of the present invention also provides an electronic device 1, which may include a memory 12, a processor 13 and a bus, and may also include a computer program stored in the memory 12 and executable on the processor 13, such as a multi-level overcurrent fault diagnosis program.

[0091] The memory 12 includes at least one type of readable storage medium, such as flash memory, portable hard drive, multimedia card, card-type memory (e.g., SD or DX memory), magnetic memory, magnetic disk, optical disk, etc. In some embodiments, the memory 12 can be an internal storage unit of the electronic device 1, such as a portable hard drive. In other embodiments, the memory 12 can be an external storage device of the electronic device 1, such as a plug-in portable hard drive, smart media card (SMC), secure digital (SD) card, flash card, etc., equipped on the electronic device 1. Furthermore, the memory 12 can include both internal and external storage units of the electronic device 1. The memory 12 can be used not only to store application software and various types of data installed on the electronic device 1, such as multi-level overcurrent fault diagnosis code, but also to temporarily store data that has been output or will be output.

[0092] In some embodiments, the processor 13 may be composed of integrated circuits, such as a single packaged integrated circuit or multiple integrated circuits with the same or different functions, including combinations of one or more central processing units (CPUs), microprocessors, digital processing chips, graphics processors, and various control chips. The processor 13 is the control unit of the electronic device 1, connecting various components of the electronic device 1 via various interfaces and lines. It executes programs or modules stored in the memory 12 (e.g., multi-level overcurrent fault diagnosis programs) and calls data stored in the memory 12 to perform various functions and process data in the electronic device 1.

[0093] The processor 13 executes the operating system of the electronic device 1 and various installed applications. The processor 13 executes the applications to implement the steps in the multi-level overcurrent fault diagnosis method described above.

[0094] For example, the computer program may be divided into one or more modules, which are stored in the memory 12 and executed by the processor 13 to complete this application. The one or more modules may be a series of computer program instruction segments capable of performing specific functions, which describe the execution process of the computer program in the electronic device 1. For example, the computer program may be divided into a data acquisition module 111, a gear adjustment module 112, and a fault diagnosis module 113.

[0095] The integrated unit implemented as a software functional module can be stored in a computer-readable storage medium, which can be non-volatile or volatile. The software functional module, stored in the storage medium, includes several instructions to cause a computer device (which may be a personal computer, computer equipment, or network device, etc.) or processor to execute some functions of the multi-level overcurrent fault diagnosis method described in the various embodiments of this application.

[0096] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A multi-gear overcurrent fault diagnosis method, characterized in that, include: Obtain the current ambient temperature and actual current of the field-effect transistor during operation; Based on the current ambient temperature and actual current, the drain-source voltage threshold of the field-effect transistor is adjusted to the corresponding drain-source voltage threshold level using a preset drain-source voltage threshold configuration table. The preset drain-source voltage threshold configuration table includes multiple drain-source voltage threshold levels, and each drain-source voltage threshold level corresponds to a different overcurrent threshold. When the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold setting, it is diagnosed as an overcurrent fault and the overcurrent protection mechanism is triggered.

2. The multi-range flow fault diagnosis method according to claim 1, characterized by, The acquisition of the current ambient temperature and actual current of the field-effect transistor during operation includes: The current ambient temperature of the field-effect transistor during operation is obtained using a thermistor; The actual current of the field-effect transistor during operation is obtained using a current sensor.

3. The multi-range flow fault diagnostic method according to claim 1, characterized by, The preset drain-source voltage threshold configuration table is obtained in the following way: Obtain the current characteristic curve of the field-effect transistor operating in the full temperature range, and determine the current slope type corresponding to the field-effect transistor based on the current characteristic curve. The current slope type includes a first type of current slope, a second type of current slope, and a third type of current slope, which are divided in order of increasing current slope. The full temperature range is divided into multiple temperature regions, and the drain-source voltage threshold levels of the field-effect transistor are configured in different temperature regions according to the current slope type corresponding to the field-effect transistor, so as to obtain the preset drain-source voltage threshold configuration table.

4. The multi-range flow fault diagnostic method according to claim 3, characterized by, In the preset drain-source voltage threshold configuration table, under the same temperature region, the drain-source voltage threshold settings of the field-effect transistors corresponding to different current slope types are different.

5. The multi-range flow fault diagnostic method according to claim 3, characterized by, In the preset drain-source voltage threshold configuration table, under the same current slope type, the drain-source voltage threshold settings of the field-effect transistors are different for different temperature regions.

6. The multi-range flow fault diagnostic method according to claim 5, characterized by, In the preset drain-source threshold voltage configuration table, the source-drain voltage threshold level of the field-effect transistor corresponding to the first type of current slope in the high-temperature region is greater than or equal to the drain-source voltage threshold level in the low-temperature region, and the source-drain voltage threshold level of the field-effect transistor corresponding to the second type of current slope and the third type of current slope in the high-temperature region is less than or equal to the drain-source voltage threshold level in the low-temperature region.

7. The multi-range flow fault diagnostic method of claim 1, wherein, The step of adjusting the drain-source voltage threshold of the field-effect transistor to the corresponding drain-source voltage threshold level based on the current ambient temperature and actual current using a preset drain-source voltage threshold configuration table includes: Based on the temperature range of the current ambient temperature and the current slope of the actual current, the drain-source voltage threshold of the field-effect transistor is adjusted to the corresponding drain-source voltage threshold level using a preset drain-source voltage threshold configuration table.

8. A multi-gear overcurrent fault diagnostic device characterized by comprising: The device includes: The data acquisition module is used to acquire the current ambient temperature and actual current of the field-effect transistor during operation. The gear adjustment module is used to adjust the drain-source voltage threshold of the field-effect transistor to the corresponding drain-source voltage threshold gear according to the current ambient temperature and actual current, using a preset drain-source voltage threshold configuration table. The preset drain-source voltage threshold configuration table includes multiple drain-source voltage threshold gears, and each drain-source voltage threshold gear corresponds to a different overcurrent threshold. The fault diagnosis module is used to diagnose an overcurrent state and trigger an overcurrent protection mechanism when the actual current exceeds the overcurrent threshold corresponding to the current drain-source voltage threshold setting.

9. An electronic device, comprising: The electronic device includes: One or more processors; A storage device for storing one or more programs, which, when executed by one or more processors, cause the electronic device to implement the multi-level overcurrent fault diagnosis method as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that, It stores a computer program that, when executed by the computer's processor, causes the computer to perform the multi-level overcurrent fault diagnosis method as described in any one of claims 1 to 7.

Images