Manufacturing method of pixel unit, pixel unit and display panel

Abstract

This invention discloses a method for manufacturing a pixel unit, comprising the following steps: S1, manufacturing an anode layer on a substrate, such that the anode layer includes a first anode structure located in a first pixel region, a second anode structure located in a second pixel region, and a third anode structure located in a third pixel region; S2, sequentially manufacturing an initial first organic light-emitting layer, an initial first transparent conductive layer, and an initial first protective layer on the substrate obtained in step S1; S3, manufacturing a first mask in the first pixel region, under which the first organic light-emitting layer, the first transparent conductive layer, and an intermediate first protective layer are obtained; S4, manufacturing a second mask above the intermediate first protective layer, such that the second mask exposes the edge of the intermediate first protective layer; under the mask of the second mask, the first protective layer is obtained, while a portion of the first transparent conductive layer is exposed. This pixel unit manufacturing method can ensure the connection effect between the cathode layer and the isolated organic light-emitting unit.

Description

Technical Field

[0001] This invention relates to the field of OLED screen manufacturing, and more specifically, to a method for manufacturing an OLED screen. Background Technology

[0002] With the rapid development of augmented reality (AR), virtual reality (VR), and microdisplay technologies, the market demand for display devices with high pixel density (high PPI), high color purity, and high reliability is becoming increasingly urgent. Among many display technologies, organic light-emitting diode (OLED) displays have become the mainstream technology in the high-end microdisplay field due to their advantages such as self-illumination, wide viewing angle, high contrast, and flexibility.

[0003] However, in the actual manufacturing process of applying Real RGB OLED structures to high PPI (typically exceeding 3000 PPI) microdisplays, there are severe technical challenges posed by traditional fabrication processes.

[0004] OLED devices typically employ a top-emitting structure and require a continuous common cathode layer covering all sub-pixels to complete the circuitry. In Real RGB structures, the anodes below the sub-pixels are isolated to enable independent driving of each pixel. However, when fabricating the common cathode on top, it is crucial to ensure that the cathode continuously and with low resistance covers all isolated organic light-emitting units. In conventional processes, steep sidewalls or poor top top morphology of the isolation structure can easily lead to cathode breakage, discontinuous coverage, or resistance surges when crossing the isolation structure, causing problems such as open circuits, uneven brightness, or excessive voltage drops, affecting display uniformity and stability. Summary of the Invention

[0005] The purpose of this invention is to provide a method for manufacturing a pixel unit that ensures a low-resistance connection between the cathode layer and the isolated organic light-emitting unit.

[0006] To achieve the above objectives, the present invention provides a method for manufacturing a pixel unit, comprising the following steps: S1. An anode layer is fabricated on a substrate, such that the anode layer includes a first anode structure located in a first pixel region, a second anode structure located in a second pixel region, and a third anode structure located in a third pixel region. S2. On the substrate obtained in step S1, an initial first organic light-emitting layer, an initial first transparent conductive layer, and an initial first protective layer are sequentially fabricated. S3. A first mask is manufactured in the first pixel area. Under the mask of the first mask, the initial first organic light-emitting layer, the initial first transparent conductive layer and the initial first protective layer located in the second pixel area and the third pixel area are removed to obtain the first organic light-emitting layer, the first transparent conductive layer and the intermediate first protective layer. S4. A second mask is made above the first protective layer in the middle, so that the edge of the first protective layer in the middle is exposed on the second mask; the exposed first protective layer in the middle is removed under the mask of the second mask to obtain the first protective layer, while exposing part of the first transparent conductive layer.

[0007] Preferably, in step S3, manufacturing a first mask in the first pixel region includes: Photoresist is coated onto the substrate obtained in step S2; By graphically preserving the photoresist in the first pixel area, the first mask is obtained.

[0008] Preferably, in step S3, manufacturing a first mask in the first pixel region includes: Photoresist is coated onto the substrate obtained in step S2; Exposure and development are performed using a grayscale mask or a halftone mask to obtain a first mask located in the first pixel area, such that the thickness of the central region of the first mask is greater than the thickness of its edge region.

[0009] Preferably, in step S4, fabricating a second mask above the intermediate first protective layer includes: The first mask is selectively etched, ashed, or thinned to remove the edge area of ​​the first mask and expose the edge of the middle first protective layer, thus obtaining the second mask.

[0010] Preferably, it further includes: S5. On the substrate obtained in step S4, an initial second organic light-emitting layer, an initial second transparent conductive layer, and an initial second protective layer are sequentially fabricated. S6. A third mask is fabricated in the second pixel area. Under the mask of the third mask, the initial second organic light-emitting layer, the initial second transparent conductive layer and the initial second protective layer located in the first pixel area and the third pixel area are removed to obtain the second organic light-emitting layer, the second transparent conductive layer and the intermediate second protective layer. S7. A fourth mask is made above the middle second protective layer, so that the edge of the middle second protective layer is exposed on the fourth mask; under the mask of the fourth mask, the exposed middle second protective layer is removed to obtain the second protective layer, while exposing part of the second transparent conductive layer.

[0011] Preferably, it further includes: S8. On the substrate obtained in step S7, an initial third organic light-emitting layer, an initial third transparent conductive layer, and an initial third protective layer are sequentially fabricated. S9. A fifth mask is fabricated in the third pixel area. Under the mask of the fifth mask, the initial third organic light-emitting layer, the initial third transparent conductive layer and the initial third protective layer located in the first pixel area and the second pixel area are removed to obtain the third organic light-emitting layer, the third transparent conductive layer and the intermediate third protective layer. S10. A sixth mask is made above the middle third protective layer, so that the edge of the middle third protective layer is exposed on the sixth mask; under the mask of the sixth mask, the exposed middle third protective layer is removed to obtain the third protective layer, while exposing part of the third transparent conductive layer.

[0012] Preferably, it further includes: S11. A cathode layer and an encapsulation layer are sequentially fabricated on the substrate obtained in step S10. The cathode layer is connected to the exposed portions of the first transparent conductive layer, the second transparent conductive layer, and the third transparent conductive layer, respectively.

[0013] The present invention also provides a pixel unit, manufactured by a pixel unit manufacturing method, comprising: A substrate, on which an anode layer is disposed, the anode layer including a first anode structure, a second anode structure and a third anode structure; The first organic light-emitting layer, the first transparent conductive layer, and the first protective layer are located on the first anode structure, with the edge of the first transparent conductive layer extending beyond the edge of the first protective layer to form a first conductive structure. Preferably, the pixel unit further includes: A second organic light-emitting layer, a second transparent conductive layer, and a second protective layer are located on the second anode structure, with the edge of the second transparent conductive layer extending beyond the edge of the second protective layer to form a second conductive structure; The third organic light-emitting layer, the third transparent conductive layer, and the third protective layer are located on the third anode structure, with the edge of the third transparent conductive layer extending beyond the edge of the third protective layer to form the third conductive structure; A cathode layer and an encapsulation layer are arranged sequentially; the cathode layer is continuously arranged and covers a first protective layer, a second protective layer and a third protective layer, and the cathode layer is connected to a first conductive structure, a second conductive structure and a third conductive structure respectively, and the encapsulation layer covers the cathode layer.

[0014] The present invention also provides a display panel comprising an array of pixel units.

[0015] According to the above technical solution, the manufacturing method of the present invention introduces a self-aligned edge etching process, which naturally forms an exposed area at the edge of the transparent conductive layer during the sub-pixel isolation etching process. This allows the common cathode to be reliably connected directly to each sub-pixel, thereby achieving high-precision isolation and stable electrical connection without the need for additional alignment photolithography. This method effectively reduces the requirements for photolithography precision, improves the consistency of pixel units and manufacturing yield, and is suitable for the large-scale manufacturing of high-pixel-density microdisplays. By using the self-aligned edge etching process, an exposed conductive structure can be formed above the isolated organic light-emitting unit. This conductive structure can be reliably connected to the cathode layer above, thereby ensuring a low-resistance connection between the cathode layer and the isolated organic light-emitting unit. Moreover, during the manufacturing process of the organic light-emitting unit, the spacer structure is located on the side of the organic light-emitting material, protecting the sidewalls of the organic light-emitting layer. The organic light-emitting layer is covered with a transparent conductive layer and a protective layer. Therefore, the transparent conductive layer and the protective layer, together with the spacer structure, provide a fully enclosed and reliable protection for the organic light-emitting layer on the anode structure, which can effectively improve the performance and lifespan of the organic light-emitting layer.

[0016] Other features and advantages of the present invention will be described in detail in the following detailed description section. Attached Figure Description

[0017] The accompanying drawings are provided to further illustrate the invention and form part of the specification. They are used together with the following detailed description to explain the invention, but do not constitute a limitation thereof. In the drawings: Figure 1 This is a flowchart of a method for manufacturing a pixel unit; Figure 2-13 This is a schematic diagram of the structure corresponding to each step in the manufacturing method of a pixel unit.

[0018] Explanation of reference numerals in the attached figures 1. Substrate; 2. First anode structure; 3. Second anode structure; 4. Third anode structure; 21. Initial first organic light-emitting layer; 22. Initial first transparent conductive layer; 23. Initial first protective layer; 211. First organic light-emitting layer; 221. First transparent conductive layer; 231. Intermediate first protective layer; 51. First photomask; 52. Second photomask; 232. First protective layer; 10. Photomask; 311. Second organic light-emitting layer; 321. Second transparent conductive layer; 332. Second protective layer; 411. Third organic light-emitting layer; 421. Third transparent conductive layer; 432. Third protective layer; 6. Cathode layer; 7. Encapsulation layer; 222. First conductive structure; 322. Second conductive structure; 422. Third conductive structure; 8. Spacer structure Detailed Implementation The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit the present invention.

[0019] In this invention, unless otherwise stated, directional terms such as "inward," "upper surface," and "between" in the terminology represent only the orientation of the term in its normal use or are common terms understood by those skilled in the art, and should not be regarded as limitations on the term.

[0020] Figure 1 This is a schematic flowchart of a pixel unit manufacturing method provided in an embodiment of the present invention. Figure 2-13 This is a structural diagram corresponding to each step in the manufacturing method of a pixel unit. The manufacturing method provided in this embodiment of the invention includes the following steps: S1. An anode layer is fabricated on substrate 1, such that the anode layer includes a first anode structure 2 located in a first pixel region, a second anode structure 3 located in a second pixel region, and a third anode structure 4 located in a third pixel region. Specific examples Figure 2 As shown, an anode layer is fabricated on the surface of a substrate 1 with a driving circuit. The anode layer includes a first anode structure 2, a second anode structure 3, and a third anode structure 4, which are spaced apart by a spacer structure 8.

[0021] S2. On the substrate 1 obtained in step S1, an initial first organic light-emitting layer 21, an initial first transparent conductive layer 22 and an initial first protective layer 23 are sequentially fabricated. Specific examples Figure 3 As shown, an initial first organic light-emitting layer 21 is first fabricated on the surface of substrate 1, then an initial first transparent conductive layer 22 is fabricated to cover the initial first organic light-emitting layer 21, and finally an initial first protective layer 23 is fabricated to cover the initial first transparent conductive layer 22.

[0022] S3. A first mask 51 is manufactured in the first pixel area. Under the mask of the first mask 51, the initial first organic light-emitting layer 21, the initial first transparent conductive layer 22 and the initial first protective layer 23 located in the second pixel area and the third pixel area are removed to obtain the first organic light-emitting layer 211, the first transparent conductive layer 221 and the intermediate first protective layer 231. Specifically, such as Figure 4-5 As shown, a photomask is used to transfer the designed pixel pattern to the photoresist layer and form a first mask 51 in the first pixel area.

[0023] In one embodiment, the first pixel area corresponds to the opaque area of ​​the photomask, while the remaining areas are transparent. Under the action of the photomask, the photoresist above the first pixel area is retained, while the photoresist in the remaining areas is dissolved.

[0024] Next, the initial first protective layer 23 beneath the first mask 51 is etched using the protective effect of the first mask 51. By controlling the etching parameters, the initial first protective layer 23 extending beyond the area of ​​the first mask 51 is removed, resulting in an intermediate first protective layer 231. Using the first mask 51 and the intermediate first protective layer 231, the initial first transparent conductive layer 22 is etched, removing the area of ​​the initial first transparent conductive layer 22 extending beyond the intermediate first protective layer 231, resulting in a first transparent conductive layer 221. Finally, under the protection of the first transparent conductive layer 221, the intermediate first protective layer 231, and the first mask 51, the initial first organic light-emitting layer 21 outside the first pixel area is removed. At this point, the first anode structure 2 is sequentially covered by the first organic light-emitting layer 211, the first transparent conductive layer 221, the intermediate first protective layer 231, and the first mask 51.

[0025] S4. A second mask 52 is made above the intermediate first protective layer 231, so that the edge of the intermediate first protective layer 231 is exposed on the second mask 52; under the mask of the second mask 52, the exposed intermediate first protective layer 231 is removed to obtain the first protective layer 232, while exposing part of the first transparent conductive layer 221.

[0026] Specifically, such as Figure 6-7 As shown, by controlling the etching parameters, a second mask 52 is fabricated based on the first mask 51. The coverage area of ​​the second mask 52 is set to be smaller than that of the first mask 51, thus exposing the edge of the intermediate first protective layer 231 that was originally covered by the first mask 51. Then, the exposed edge of the intermediate first protective layer 231 can be etched based on the second mask 52, exposing the edge of the first transparent conductive layer 221. In this etching process, by using the first mask 51 to fabricate the second mask 52, self-aligned edge etching can be achieved during the etching process. Using this self-aligned edge etching process, the edge of the first mask 51 can be automatically aligned for etching, resulting in a second mask 52 with a smaller coverage area. Based on this second mask 52, the edge of the intermediate first protective layer 231 can be etched, exposing the edge of the first transparent conductive layer 221.

[0027] The exposed first transparent conductive layer 221 is a first conductive structure 222, which surrounds the first anode structure 2. A common cathode layer 6 can be fabricated based on this first conductive structure, so that the common cathode layer 6 is connected to the first organic light-emitting layer 211 through the first conductive structure 222. The first conductive structure 222 ensures reliable conduction between the common cathode layer 6 and the organic light-emitting layer, thereby ensuring that the cathode layer 6 can continuously and with low resistance cover all isolated organic light-emitting units.

[0028] Preferably, the size of the first conductive structure 222 can be controlled by controlling the size of the area covered by the second mask 52 and the first mask 51, thereby ensuring a low-resistance connection between the cathode layer 6 and the isolated organic light-emitting unit.

[0029] Therefore, by implementing the above manufacturing method and introducing a self-aligned edge etching process, a transparent conductive layer edge exposure area is naturally formed during the sub-pixel isolation etching process. This allows the common cathode to be directly and reliably connected to each sub-pixel, achieving high-precision isolation and stable electrical connection without the need for additional alignment photolithography. This method effectively reduces the requirements for photolithography precision, improves the consistency and manufacturing yield of Real RGB OLED pixels, and is suitable for the large-scale manufacturing of high-pixel-density microdisplays. By using the self-aligned edge etching process to form an exposed conductive structure above the isolated organic light-emitting unit, this conductive structure can be reliably connected to the cathode layer 6 above, thus ensuring a low-resistance connection between the cathode layer 6 and the isolated organic light-emitting unit. Moreover, during the manufacturing of the organic light-emitting unit, the spacer structure 8 is located on the side of the organic light-emitting material, protecting the sidewalls of the organic light-emitting layer. The organic light-emitting layer is covered with a transparent conductive layer and a protective layer. Therefore, the transparent conductive layer and the protective layer, together with the spacer structure 8, provide a fully enclosed and reliable protection for the organic light-emitting layer on the anode structure, effectively improving the performance and lifespan of the organic light-emitting layer.

[0030] In this embodiment, preferably, in step S3, manufacturing a first mask 51 in the first pixel region includes: Photoresist is coated onto the substrate 1 obtained in step S2; By graphically preserving the photoresist in the first pixel area, the first mask 51 is obtained.

[0031] like Figure 4 As shown, photoresist is coated on the substrate 1 obtained in step S2. Through patterning, the photoresist in the first pixel area is retained to obtain the first mask 51. The size of the first mask 51 is adapted to the size of the first pixel area and is larger than the first anode structure 2, so that when the initial first protective layer 23 and the initial first transparent conductive layer 22 in other areas are removed using the first mask 51, the resulting intermediate first protective layer 231 and first transparent conductive layer 221 extend beyond the area of ​​the first organic light-emitting layer 211.

[0032] The region of the first transparent conductive layer 221 that extends beyond the first organic light-emitting layer 211 can be used to form the first conductive structure 222. Moreover, the regions of the intermediate first protective layer 231 and the first transparent conductive layer 221 that extend beyond the first organic light-emitting layer 211 can reliably cover the first organic light-emitting layer 211, achieving a better protective effect.

[0033] In this embodiment, preferably, in step S4, a second mask 52 is manufactured above the intermediate first protective layer 231, including: By selectively etching the edges of the first mask 51, a second mask 52 is obtained, which exposes the edges of the middle first protective layer 231.

[0034] like Figure 6 As shown, the edges of the first mask 51 are etched by selective etching to obtain a second mask 52 with a smaller coverage area than the first mask 51. At this time, the edge of the middle first protective layer 231 is exposed. By etching the exposed edge of the first transparent conductive layer 221, the first conductive structure 222 can be obtained. The first conductive structure 222 surrounds the outer periphery of the first organic light-emitting layer 211 and can be connected to the upper common cathode layer 6 to ensure the reliability of the connection between the organic light-emitting unit and the cathode.

[0035] In this embodiment, preferably, in step S3, manufacturing a first mask 51 in the first pixel region includes: Photoresist is coated onto the substrate 1 obtained in step S2; Exposure and development are performed using a grayscale mask 10 or a halftone mask 10 to obtain a first mask 51 located in the first pixel area, such that the thickness of the central region of the first mask 51 is greater than the thickness of its edge region.

[0036] like Figure 8-9 As shown, the photomask 10 can be set as a grayscale mask or a halftone mask, and the photoresist can be exposed and developed using this grayscale mask or halftone mask, so that the photoresist forms a first mask 51 with a thickness difference in the target sub-pixel region. The photoresist in the central region of the first mask 51 is thicker, and the photoresist gradually thins at the edge region. The thickness gradient structure of the first mask 51 can be used to achieve self-aligned exposure control of the underlying protective layer in subsequent etching processes.

[0037] In this embodiment, preferably, in step S4, a second mask 52 is manufactured above the intermediate first protective layer 231, including: The first mask 51 is grayed or thinned so that the edge area of ​​the first mask 51 is removed, exposing the edge of the middle first protective layer 231, thus obtaining the second mask 52.

[0038] The first photomask 51, which has a thickness gradient, is ashed or thinned, so that the thinner portions at the edges of the first photomask 51 are removed, exposing the edges of the middle first protective layer 231, while the thicker portions of the photoresist in the middle are retained, resulting in... Figure 7The second mask 52 is shown. Then, the edge of the exposed intermediate first protective layer 231 can be etched using the second mask 52, thereby exposing the underlying first conductive structure 222.

[0039] In this embodiment, preferably, it further includes: S5. On the substrate 1 obtained in step S4, an initial second organic light-emitting layer 311, an initial second transparent conductive layer 321 and an initial second protective layer 332 are sequentially fabricated. S6. A third mask is fabricated in the second pixel area. Under the mask of the third mask, the initial second organic light-emitting layer 311, the initial second transparent conductive layer 321 and the initial second protective layer 332 located in the first pixel area and the third pixel area are removed to obtain the second organic light-emitting layer 311, the second transparent conductive layer 321 and the intermediate second protective layer 332. S7. A fourth mask is made above the intermediate second protective layer 332, so that the edge of the intermediate second protective layer 332 is exposed on the fourth mask; under the mask 10 of the fourth mask, the exposed intermediate second protective layer 332 is removed to obtain the second protective layer 332, while exposing part of the second transparent conductive layer 321.

[0040] According to the manufacturing method of the first pixel area, a second organic light-emitting layer 311 located above the second anode structure 3, a second transparent conductive layer 321 covering the second organic light-emitting layer 311 and extending beyond the second organic light-emitting layer 311, and a second protective layer 332 covering the second transparent conductive layer 321 are manufactured in the second pixel area, and the edge portion of the second transparent conductive layer 321 extends beyond the second protective layer 332 to form an exposed second conductive structure 322.

[0041] In this embodiment, preferably, it further includes: S8. On the substrate 1 obtained in step S7, an initial third organic light-emitting layer 411, an initial third transparent conductive layer 421 and an initial third protective layer 432 are sequentially fabricated. S9. A fifth mask is fabricated in the third pixel area. Under the mask 10 of the fifth mask, the initial third organic light-emitting layer 411, the initial third transparent conductive layer 421 and the initial third protective layer 432 located in the first pixel area and the second pixel area are removed to obtain the third organic light-emitting layer 411, the third transparent conductive layer 421 and the intermediate third protective layer 432. S10. A sixth mask is made above the intermediate third protective layer 432, so that the edge of the intermediate third protective layer 432 is exposed on the sixth mask. Under the mask 10 of the sixth mask, the exposed intermediate third protective layer 432 is removed to obtain the third protective layer 432, while exposing part of the third transparent conductive layer 421.

[0042] According to the manufacturing method of the first pixel area, a third organic light-emitting layer 411 located above the third anode structure 4, a third transparent conductive layer 421 covering the third organic light-emitting layer 411 and extending beyond the third organic light-emitting layer 411, and a third protective layer 432 covering the third transparent conductive layer 421 are manufactured in the third pixel area, and the edge portion of the third transparent conductive layer 421 extends beyond the third protective layer 432 to form an exposed third conductive structure 422.

[0043] In this embodiment, preferably, it further includes: S11. A cathode layer 6 and an encapsulation layer 7 are sequentially fabricated on the substrate 1 obtained in step S10. The cathode layer 6 is connected to the exposed portions of the first transparent conductive layer 221, the second transparent conductive layer 321, and the third transparent conductive layer 421, respectively.

[0044] like Figure 12 As shown, the cathode layer 6 covers the entire substrate 1, and there are exposed first conductive structures 222, second conductive structures 322 and third conductive structures 422 between two adjacent pixel areas. The cathode layer 6 covers these conductive structures and is connected to the conductive mechanism.

[0045] The spacer structure 8 is covered with a partial organic light-emitting layer and a transparent conductive layer. The organic light-emitting layer and the transparent conductive layer of two adjacent pixel units will form a gap on the spacer structure 8. In order to ensure the continuity of the cathode layer 6, preferably, the thickness of the cathode layer 6 is set to be greater than the thickness of the organic light-emitting layer. When manufacturing the cathode layer 6, the cathode material is filled in the gap and can contact the transparent conductive layer above it, thereby ensuring the continuity of the common cathode layer 6.

[0046] Each isolated organic light-emitting unit is surrounded by a conductive structure. Through the connection of these conductive structures with the cathode layer 6, the common cathode layer 6 can be reliably connected to all organic light-emitting units.

[0047] like Figure 13 As shown, the encapsulation layer 7 covers the cathode layer 6.

[0048] The present invention also provides a pixel unit, which is manufactured by a pixel unit manufacturing method, comprising: A substrate 1, on which an anode layer is disposed, the anode layer including a first anode structure 2, a second anode structure 3 and a third anode structure 4; The first organic light-emitting layer 211, the first transparent conductive layer 221, and the first protective layer 232 are located on the first anode structure 2. The edge of the first transparent conductive layer 221 extends beyond the edge of the first protective layer 232 to form the first conductive structure 222. In this embodiment, preferably, the pixel unit further includes: The second organic light-emitting layer 311, the second transparent conductive layer 321 and the second protective layer 332 are located on the second anode structure 3. The edge of the second transparent conductive layer 321 extends beyond the edge of the second protective layer 332 to form the second conductive structure 322. The third organic light-emitting layer 411, the third transparent conductive layer 421 and the third protective layer 432 are located on the third anode structure 4. The edge of the third transparent conductive layer 421 extends beyond the edge of the third protective layer 432 to form the third conductive structure 422. A cathode layer 6 and an encapsulation layer 7 are arranged sequentially. The cathode layer 6 is continuously arranged and covers the first protective layer 232, the second protective layer 332 and the third protective layer 432. The cathode layer 6 is connected to the first conductive structure 222, the second conductive structure 322 and the third conductive structure 422 respectively. The encapsulation layer 7 covers the cathode layer 6.

[0049] The present invention also provides a display panel comprising an array of pixel units.

[0050] The preferred embodiments of the present invention have been described in detail above with reference to the accompanying drawings. However, the present invention is not limited to the specific details of the above embodiments. Within the scope of the technical concept of the present invention, various simple modifications can be made to the technical solution of the present invention, and these simple modifications all fall within the protection scope of the present invention.

[0051] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present invention will not describe the various possible combinations separately.

[0052] Furthermore, various different embodiments of the present invention can be combined in any way, as long as they do not violate the spirit of the present invention, they should also be regarded as the content disclosed by the present invention.

Claims

1. A method for manufacturing a pixel unit, characterized in that, Includes the following steps: S1. An anode layer is fabricated on a substrate, such that the anode layer includes a first anode structure located in a first pixel region, a second anode structure located in a second pixel region, and a third anode structure located in a third pixel region; S2. On the substrate obtained in step S1, an initial first organic light-emitting layer, an initial first transparent conductive layer, and an initial first protective layer are sequentially fabricated. S3. A first mask is fabricated in the first pixel area. Under the mask of the first mask, the initial first organic light-emitting layer, the initial first transparent conductive layer and the initial first protective layer located in the second pixel area and the third pixel area are removed to obtain the first organic light-emitting layer, the first transparent conductive layer and the intermediate first protective layer. S4. A second mask is manufactured above the intermediate first protective layer, such that the edge of the intermediate first protective layer is exposed on the second mask; the exposed intermediate first protective layer is removed under the mask of the second mask to obtain the first protective layer, while exposing a portion of the first transparent conductive layer.

2. The method for manufacturing a pixel unit according to claim 1, characterized in that, In step S3, a first mask is fabricated in the first pixel region, including: Photoresist is coated onto the substrate obtained in step S2; By graphically preserving the photoresist in the first pixel area, a first mask is obtained.

3. The method for manufacturing a pixel unit according to claim 2, characterized in that, In step S3, a first mask is fabricated in the first pixel region, including: Photoresist is coated onto the substrate obtained in step S2; Exposure and development are performed using a grayscale mask or a halftone mask to obtain a first mask located in the first pixel area, such that the thickness of the central region of the first mask is greater than the thickness of its edge region.

4. The method for manufacturing a pixel unit according to claim 2 or 3, characterized in that, In step S4, a second mask is manufactured above the intermediate first protective layer, including: The first mask is selectively etched, ashed, or thinned to remove the edge region of the first mask and expose the edge of the intermediate first protective layer, thus obtaining the second mask.

5. The method for manufacturing a pixel unit according to claim 4, characterized in that, Also includes: S5. On the substrate obtained in step S4, an initial second organic light-emitting layer, an initial second transparent conductive layer, and an initial second protective layer are sequentially fabricated. S6. A third mask is fabricated in the second pixel area. Under the mask of the third mask, the initial second organic light-emitting layer, the initial second transparent conductive layer and the initial second protective layer located in the first pixel area and the third pixel area are removed to obtain the second organic light-emitting layer, the second transparent conductive layer and the intermediate second protective layer. S7. A fourth mask is manufactured above the intermediate second protective layer, such that the edge of the intermediate second protective layer is exposed on the fourth mask; the exposed intermediate second protective layer is removed under the mask of the fourth mask to obtain the second protective layer, while exposing a portion of the second transparent conductive layer.

6. The method for manufacturing a pixel unit according to claim 5, characterized in that, Also includes: S8. On the substrate obtained in step S7, an initial third organic light-emitting layer, an initial third transparent conductive layer, and an initial third protective layer are sequentially fabricated. S9. A fifth mask is fabricated in the third pixel area. Under the mask of the fifth mask, the initial third organic light-emitting layer, the initial third transparent conductive layer and the initial third protective layer located in the first pixel area and the second pixel area are removed to obtain the third organic light-emitting layer, the third transparent conductive layer and the intermediate third protective layer. S10. A sixth mask is manufactured above the intermediate third protective layer, such that the edge of the intermediate third protective layer is exposed on the sixth mask; the exposed intermediate third protective layer is removed under the mask of the sixth mask to obtain the third protective layer, while exposing a portion of the third transparent conductive layer.

7. The method for manufacturing a pixel unit according to claim 6, characterized in that, Also includes: S11. A cathode layer and an encapsulation layer are sequentially fabricated on the substrate obtained in step S10. The cathode layer is connected to the exposed portions of the first transparent conductive layer, the second transparent conductive layer, and the third transparent conductive layer, respectively.

8. A pixel unit, characterized in that, The pixel unit is manufactured by the method described in any one of claims 1-7, comprising: A substrate on which an anode layer is disposed, the anode layer comprising a first anode structure, a second anode structure and a third anode structure; The first organic light-emitting layer, the first transparent conductive layer, and the first protective layer are located on the first anode structure, and the edge of the first transparent conductive layer extends beyond the edge of the first protective layer to form a first conductive structure.

9. The pixel unit according to claim 8, characterized in that, The pixel unit further includes: A second organic light-emitting layer, a second transparent conductive layer, and a second protective layer are located on the second anode structure, with the edge of the second transparent conductive layer extending beyond the edge of the second protective layer to form a second conductive structure; A third organic light-emitting layer, a third transparent conductive layer, and a third protective layer are located on the third anode structure, wherein the edge of the third transparent conductive layer extends beyond the edge of the third protective layer to form a third conductive structure; A cathode layer and an encapsulation layer are arranged sequentially; the cathode layer is continuously arranged and covers the first protective layer, the second protective layer and the third protective layer, and the cathode layer is connected to the first conductive structure, the second conductive structure and the third conductive structure respectively, and the encapsulation layer covers the cathode layer.

10. A display panel, characterized in that, Including pixel units arranged in an array as described in any one of claims 9-10.

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